A high-precision voltage regulator circuit with zero temperature coefficient
By generating a reference voltage VREF with zero temperature coefficient and a high-voltage isolation unit, the problem of balancing output accuracy and temperature coefficient in traditional voltage regulator circuits is solved, realizing a high-precision and low-loss voltage regulator circuit suitable for high-voltage output.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- WUXI MILESTONE SEMICON INC
- Filing Date
- 2024-12-26
- Publication Date
- 2026-07-03
AI Technical Summary
Traditional voltage regulator circuits struggle to simultaneously guarantee output accuracy and temperature coefficient during TRIM. Furthermore, voltage regulator circuits fabricated using bipolar processes have low withstand voltage, making them unsuitable for high-voltage output applications. They also suffer from high operating current and high operating losses, which negatively impact circuit stability.
A first current I1 with a positive temperature coefficient and a second current I2 with a negative temperature coefficient are used to generate a reference voltage VREF with zero temperature coefficient through a voltage regulator unit. A high-voltage isolation unit is fabricated using BCD technology to form a high-precision voltage regulator circuit with zero temperature coefficient.
It achieves improved output accuracy without affecting the temperature coefficient, while reducing quiescent current and operating losses, improving circuit stability and withstand voltage, and is suitable for high-voltage output applications.
Smart Images
Figure CN119759168B_ABST
Abstract
Description
Technical Field
[0001] This invention relates to the field of voltage regulator circuit technology, and in particular to a high-precision voltage regulator circuit with zero temperature coefficient. Background Technology
[0002] With social development and technological progress, the demand for high-precision power supplies is increasing. Voltage regulator circuits are widely used in DC-DC (direct current to direct current converter) and AC-DC (alternating current to direct current converter) applications in various fields. Figure 1 The diagram shows the circuit schematic of a traditional voltage regulator circuit. During TRIM (trimming), this circuit typically adjusts the reference voltage by changing the resistance of resistor R5 via a fuse, thus fine-tuning the output accuracy of the voltage regulator. However, changes in the resistance of R5 affect both output accuracy and the temperature coefficient of the voltage regulator circuit. Therefore, existing technologies often only guarantee that either output accuracy or temperature coefficient meets the target parameters during TRIM, which causes significant inconvenience in production testing and applications.
[0003] Meanwhile, most voltage regulator circuits on the market are currently fabricated using bipolar technology. Due to limitations of the fabrication platform, the withstand voltage of bipolar technology is much lower than that of BCD technology. Therefore, traditional voltage regulator circuits can no longer meet the requirements of some high-voltage output applications. This usually requires a transformer with additional windings to reduce the voltage, which inconveniences production and increases costs. Furthermore, because the amplification factor of transistors fabricated using bipolar technology is relatively low, voltage regulator circuits fabricated using this technology generally require a large IBE current to stabilize the system. Typically, the operating current needs to be 1mA, resulting in a large quiescent current, significant operating losses, and an impact on the overall stability of the circuit. Summary of the Invention
[0004] To address the aforementioned problems and technical requirements, the inventors have proposed a high-precision voltage regulator circuit with zero temperature coefficient. The technical solution of this invention is as follows:
[0005] A high-precision voltage regulator circuit with zero temperature coefficient includes a voltage regulator unit, a first current source unit, and a second current source unit connected in an adapter configuration, wherein...
[0006] The first current source unit is used to generate a first current I1 with a positive temperature coefficient, and the second current source unit is used to generate a second current I2 with a negative temperature coefficient.
[0007] Based on the first current I1, the second current I2, and the component parameters of the voltage regulator unit, the voltage regulator unit generates a reference voltage VREF with zero temperature coefficient.
[0008] A further technical solution is that the first current source unit includes a power device Q1, n power devices Q2, and a resistor R2;
[0009] All power devices Q2 are connected in parallel. The second electrode of power device Q1 is connected to one end of resistor R2, and the other end of resistor R2 is connected to the second electrodes of all power devices Q2. The first electrodes of all power devices Q2 are connected to the first electrode of power device Q1. The dimensions of power devices Q2 and Q1 are the same. The first current I1 satisfies:
[0010]
[0011] Where VBE1 represents the voltage between the second electrode and the first electrode of power device Q1, VBE2 represents the voltage between the second electrode and the first electrode of power device Q2, VT represents the thermal voltage, and R2 represents the resistance value of resistor R2.
[0012] A further technical solution includes a first current mirror unit, which comprises power device Q3 and power device Q4, wherein...
[0013] The third electrode of power device Q4 is connected to the second electrode, the first electrode of power device Q3 is connected to the first electrode of power device Q4, the second electrode of power device Q3 is connected to the second electrode of power device Q4, and the third electrode of power device Q3 is connected to the first electrode of all power devices Q2 and the first electrode of power device Q1.
[0014] A further technical solution is that the second current source unit includes a power device Q5 and a resistor R6, wherein,
[0015] One end of the resistor R6 is connected to the first electrode of the power device Q5 and grounded, and the second electrode of the power device Q5 is connected to the other end of the resistor R6. The second current I2 satisfies:
[0016]
[0017] Where VBE5 represents the voltage between the second electrode and the first electrode of power device Q5, and R6 represents the resistance value of resistor R6.
[0018] A further technical solution includes a second current mirror unit, which comprises power device P4, power device P5, power device N3, and resistor R5.
[0019] The first electrode of the power device N3 is connected to the other end of the resistor R6 and the second electrode of the power device Q5; the second electrode of the power device N3 is connected to one end of the resistor R5 and the third electrode of the power device Q5; the third electrode of the power device N3 is connected to the second electrode and the third electrode of the power device P5.
[0020] The first electrode of the power device P5 is connected to the other end of the resistor R5 and the first electrode of the power device P4. The second electrode of the power device P4 is connected to the second electrode of the power device P5. The third electrode of the power device P4 is connected to the first electrode of the power device Q4.
[0021] A further technical solution includes a third current mirror unit, which comprises power device P1, power device P2, and power device P3, wherein...
[0022] The first electrode of power device P1 is connected to the first electrode of power device P2 and the first electrode of power device P3. The second electrode of power device P1 is connected to the second electrode of power device P2 and the second electrode of power device P3. The third electrode of power device P1 is connected to the third electrode of power device Q1. The third electrode of power device P2 is connected to the second electrode.
[0023] A further technical solution is that the voltage regulation unit includes a power device Q6, resistors R1, R3, and R4, wherein...
[0024] One end of the resistor R3 is connected to the second electrode of all power devices Q2, the other end of the resistor R3 is connected to the third electrode of power device Q4, the third electrode of power device Q6 is connected to the third electrode of power device P3, and the first electrode of power device Q6 is connected to one end of resistor R2 and the second electrode of power device Q1 through resistor R1.
[0025] One end of the resistor R4 is connected to the first electrode of the power device Q3, the first electrode of the power device Q4, and the third electrode of the power device P4, and the other end of the resistor R4 is grounded.
[0026] The reference voltage VREF satisfies:
[0027]
[0028] Wherein, VBE6 represents the voltage between the second electrode and the first electrode of power device Q6, VBE4 represents the voltage between the second electrode and the first electrode of power device Q4, R1 represents the resistance value of resistor R1, R3 represents the resistance value of resistor R3, and R4 represents the resistance value of resistor R4.
[0029] A further technical solution includes a drive compensation unit and a power device Q7, wherein the drive compensation unit controls the conduction state of the power device Q7 based on the conduction state of the power device Q1.
[0030] The second electrode of the power device Q7 is connected to the output terminal of the drive compensation unit, the first electrode of the power device Q7 is grounded, and the second electrode of the power device Q7 is connected to the first electrodes of the power devices P1, P2 and P3.
[0031] A further technical solution is to fabricate the voltage regulator circuit using a bipolar process or a BCD process;
[0032] When the voltage regulator circuit is fabricated using a bipolar process, power devices P1, P2, P3, P4, and P5 are PNP transistors, and power devices Q7 and N3 are NPN transistors.
[0033] When the voltage regulator circuit is fabricated using the BCD process, power devices P1, P2, P3, P4, and P5 are high-voltage PMOS transistors, and power devices Q7 and N3 are high-voltage NMOS transistors.
[0034] A further technical solution is that, when the voltage regulator circuit is fabricated using the BCD process, the voltage regulator circuit further includes a high-voltage isolation unit, which includes a high-voltage NMOS transistor N1, a high-voltage NMOS transistor N2, and a high-voltage PMOS transistor P6, wherein...
[0035] The source of the high-voltage NMOS transistor N1 is connected to the third electrode of the power device Q1, the drain of the high-voltage NMOS transistor N1 is connected to the third electrode of the power device P1, the gate of the high-voltage NMOS transistor N1 is connected to the gate of the high-voltage NMOS transistor N2 and the gate of the high-voltage PMOS transistor P4, the source of the high-voltage NMOS transistor N2 is connected to the third electrode of all power devices Q2, the drain of the high-voltage NMOS transistor N2 is connected to the third electrode of the power device P2, the source of the high-voltage PMOS transistor P4 is connected to the third electrode of the power device Q6, and the drain of the high-voltage PMOS transistor P4 is grounded.
[0036] The beneficial technical effects of this invention are:
[0037] The voltage regulator circuit provided by this invention can generate a reference voltage VREF with zero temperature coefficient based on the first current I1, the second current I2, and the component parameters of the voltage regulator unit. This allows the voltage regulator circuit to be adjusted without affecting the temperature coefficient, thus achieving high output accuracy. Furthermore, by incorporating a high-voltage isolation unit, the voltage regulator circuit can be fabricated using BCD technology, resulting in high voltage withstand capability, low quiescent current, low operating losses, high overall circuit stability, and suitability for high-voltage output applications. Attached Figure Description
[0038] Figure 1 This is a circuit diagram of a traditional voltage regulator circuit provided by the present invention.
[0039] Figure 2 This is a circuit schematic diagram of a high-precision voltage regulator circuit with zero temperature coefficient provided by the present invention.
[0040] Figure 3 This is a circuit schematic diagram of Embodiment 2 of the high-precision voltage regulator circuit with zero temperature coefficient provided by the present invention. Detailed Implementation
[0041] The specific embodiments of the present invention will be further described below with reference to the accompanying drawings.
[0042] This invention provides a high-precision voltage regulator circuit with zero temperature coefficient, comprising a voltage regulator unit, a first current source unit, and a second current source unit connected in an adaptive manner, wherein...
[0043] The first current source unit is used to generate a first current I1 with a positive temperature coefficient, and the second current source unit is used to generate a second current I2 with a negative temperature coefficient.
[0044] Based on the first current I1, the second current I2, and the component parameters of the voltage regulator unit, the voltage regulator unit generates a reference voltage VREF with zero temperature coefficient.
[0045] Specifically, the first current I1 is directly proportional to temperature, and the second current I2 is inversely proportional to temperature. The magnitude of the first current I1 can be controlled by the component parameters in the first current source unit, and the magnitude of the second current I2 can be controlled by the component parameters in the second current source unit. Therefore, by configuring the component parameters in the first current source unit, the second current source unit, and the voltage regulator unit, the reference voltage VREF output by the voltage regulator unit can be made unaffected by temperature, i.e., it has a zero temperature coefficient. The specific forms of the voltage regulator unit, the first current source unit, and the second current source unit can be referred to the following description.
[0046] Further, the first current source unit includes a power device Q1, n power devices Q2, and a resistor R2; all power devices Q2 are connected in parallel, the second electrode of each power device Q1 is connected to one end of the resistor R2, the other end of the resistor R2 is connected to the second electrodes of all power devices Q2, the first electrodes of all power devices Q2 are connected to the first electrode of each power device Q1, and the dimensions of all power devices Q2 are the same as those of power devices Q1. The first current I1 satisfies:
[0047]
[0048] Where VBE1 represents the voltage between the second and first electrodes of power device Q1, VBE2 represents the voltage between the second and first electrodes of power device Q2, VT represents the thermal voltage, and R2 represents the resistance value of resistor R2. VT = kT / q, where k is Boltzmann's constant, q is the electron charge, and T is the absolute temperature. The component parameters of the first current source unit are the resistance value of resistor R2 and the number of power devices Q2.
[0049] Specifically, all power devices Q2 are connected in parallel, meaning that the first electrodes of all power devices Q2 are connected to each other, the second electrodes of all power devices Q2 are connected to each other, and the third electrodes of all power devices Q2 are also connected to each other. The fact that power devices Q2 and Q1 have the same dimensions means that the characteristic dimensions of the power devices are the same.
[0050] The voltage regulator circuit can be fabricated using a bipolar process or a BCD process. The types of power devices in the circuit need to be set according to the different fabrication processes. In Embodiment 1 of the present invention, the voltage regulator circuit is fabricated using a bipolar process. Figure 2 The circuit diagram of Embodiment 1 is shown. In Embodiment 1, both power devices Q1 and Q2 are NPN transistors. For NPN transistors, the first electrode of power devices Q1 and Q2 is the emitter, the second electrode is the base, and the third electrode is the collector. The base-emitter voltage of the transistor is inversely proportional to temperature. However, since n power devices Q2 are connected in parallel, VBE1-VBE2 is directly proportional to temperature. Therefore, the resulting first current I1 flowing through resistor R2 has a positive temperature coefficient. In Embodiment 1, the number of power devices Q2 is n=8, and the first current I1 can be expressed as VTln8 / R2. It should be noted that... Figure 2 Only one power device Q2 is shown in the figure to represent the connection relationship between the electrodes of all power devices Q2 and power devices Q1 and resistor R2.
[0051] Furthermore, the voltage regulator circuit also includes a first current mirror unit, which includes power device Q3 and power device Q4, wherein...
[0052] The third electrode of power device Q4 is connected to the second electrode, the first electrode of power device Q3 is connected to the first electrode of power device Q4, the second electrode of power device Q3 is connected to the second electrode of power device Q4, and the third electrode of power device Q3 is connected to the first electrode of all power devices Q2 and the first electrode of power device Q1.
[0053] In Embodiment 1, both power devices Q3 and Q4 are NPN transistors. The definitions of the first, second, and third electrodes of power devices Q3 and Q4 are the same as those for the first, second, and third electrodes of NPN transistors, and will not be repeated here. Power devices Q3 and Q4 form a current mirror, with power device Q3 mirroring the current flowing through power device Q4.
[0054] Furthermore, the second current source unit includes a power device Q5 and a resistor R6, wherein,
[0055] One end of the resistor R6 is connected to the first electrode of the power device Q5 and grounded, and the second electrode of the power device Q5 is connected to the other end of the resistor R6. The second current I2 satisfies:
[0056]
[0057] Where VBE5 represents the voltage between the second electrode and the first electrode of power device Q5, and R6 represents the resistance value of resistor R6. In Embodiment 1, power device Q5 is an NPN transistor. The base-emitter voltage VBE5 of transistor Q5 is inversely proportional to temperature; therefore, the current flowing through resistor R6 has a negative temperature coefficient. The component parameter of the second current source unit is the resistance value of resistor R6.
[0058] The voltage regulator circuit further includes a second current mirror unit, which comprises power devices P4, P5, and N3, and a resistor R5.
[0059] The first electrode of the power device N3 is connected to the other end of the resistor R6 and the second electrode of the power device Q5; the second electrode of the power device N3 is connected to one end of the resistor R5 and the third electrode of the power device Q5; the third electrode of the power device N3 is connected to the second electrode and the third electrode of the power device P5.
[0060] The first electrode of the power device P5 is connected to the other end of the resistor R5 and the first electrode of the power device P4. The second electrode of the power device P4 is connected to the second electrode of the power device P5. The third electrode of the power device P4 is connected to the first electrode of the power device Q4.
[0061] In Example 1, power devices P4 and P5 are PNP transistors, and power device N3 is an NPN transistor. The definitions of the first, second, and third electrodes of power devices Q3 and Q4 are the same as those for the first, second, and third electrodes of NPN transistors, and will not be repeated here. The definitions of the first, second, and third electrodes of the PNP transistor are the same as those for the first, second, and third electrodes of NPN transistors. Power devices P4 and P5 form a current mirror, reflecting the current flowing through resistor R6 to obtain a second current I2.
[0062] The voltage regulator circuit further includes a third current mirror unit, which comprises power devices P1, P2, and P3.
[0063] The first electrode of power device P1 is connected to the first electrode of power device P2 and the first electrode of power device P3. The second electrode of power device P1 is connected to the second electrode of power device P2 and the second electrode of power device P3. The third electrode of power device P1 is connected to the third electrode of power device Q1. The third electrode of power device P2 is connected to the second electrode.
[0064] Specifically, in Embodiment 1, the power devices P1, P2, and P3 are all PNP transistors. The emitters of the power devices P1, P2, and P3 are interconnected to form the cathode of the voltage regulator circuit. The power devices P1, P2, and P3 form a current mirror, mirroring the collector current of the power device P1 to the collector of the power device P3.
[0065] Furthermore, the voltage regulator unit includes a power device Q6, resistors R1, R3, and R4. One end of resistor R3 is connected to the second electrode of power device Q2, and the other end of resistor R3 is connected to the third electrode of power device Q4. The third electrode of power device Q6 is connected to the third electrode of power device P3. The voltage of the second electrode of power device Q6 is a reference voltage VREF. The first electrode of power device Q6 is connected to one end of resistor R1 and resistor R2 and the second electrode of power device Q1.
[0066] One end of resistor R4 is connected to the first electrode of power device Q3, the first electrode of power device Q4, and the third electrode of power device P4, and the other end of resistor R4 is grounded; the reference voltage VREF satisfies:
[0067]
[0068] Wherein, VBE6 represents the voltage between the second electrode and the first electrode of power device Q6, VBE4 represents the voltage between the second electrode and the first electrode of power device Q4, R1 represents the resistance value of resistor R1, R3 represents the resistance value of resistor R3, and R4 represents the resistance value of resistor R4.
[0069] Specifically, in Embodiment 1, the power device Q6 is an NPN transistor. One end of resistor R4 is connected to one end of resistor R6 and the emitter of transistor Q5 to form the anode of the voltage regulator circuit. The component parameters of the voltage regulator unit include the resistance values of resistors R1 and R3. Since (VBE6 + VBE4) has a negative temperature coefficient, I1 = VTln(n) / R2 has a positive temperature coefficient, and I2 = VBE5 / R6 has a negative temperature coefficient, the value of VBE6 + VBE4 + I1(R1 + R2 + R3) can be made independent of temperature by configuring the number n of power devices Q2 and the resistance values of resistors R1, R2, and R3. At the same time, the value of I2 + 2I1 can be made independent of temperature by configuring the resistance value of resistor R6, thus making VREF have a zero temperature coefficient. At this point, the reference voltage VREF can be fine-tuned by adjusting the resistance of resistor R4 via the fuse during TRIM, so that the voltage regulator circuit has both zero temperature coefficient and high output accuracy. The typical value of the reference voltage VREF is 2.5V.
[0070] Furthermore, the voltage regulator circuit also includes a drive compensation unit and a power device Q7, wherein the drive compensation unit controls the conduction state of the power device Q7 based on the conduction state of the power device Q1.
[0071] The second electrode of the power device Q7 is connected to the output terminal of the drive compensation unit, the first electrode of the power device Q7 is grounded, and the second electrode of the power device Q7 is connected to the first electrodes of the power devices P1, P2 and P3.
[0072] Specifically, in Embodiment 1, power device Q7 is an NPN transistor. The input terminal of the drive compensation unit is connected to the third electrode of power device Q1 and the third electrode of power device P1. In practical applications, the second electrode of power device Q6 serves as the reference terminal of the voltage regulator circuit. When the voltage applied to the reference terminal is greater than VREF, power device Q6 conducts, thereby turning on power device Q1. The collector of power device Q1 is pulled low. At this time, the drive compensation unit pulls the potential of the second electrode of power device Q7 high, turning on power device Q7, i.e., the cathode and anode of the voltage regulator circuit are connected. Conversely, when the voltage applied to the reference terminal is less than VREF, power device Q6 turns off, turning off power device Q1. Simultaneously, power device Q2 conducts, pulling the collector potential of power device Q1 high. At this time, the drive compensation unit pulls the potential of the second electrode of power device Q7 low, turning off power device Q7. The drive compensation unit includes a drive circuit and a compensation circuit commonly used in voltage regulator circuits. The form of the drive circuit and the compensation circuit can be consistent with existing technologies.
[0073] The present invention also provides a second embodiment, in which the voltage regulator circuit is fabricated using BCD technology. Figure 3 The circuit schematic of Embodiment 2 is shown. The difference between Embodiment 2 and Embodiment 1 is that, when fabricated using BCD (Bipolar-CMOS-DMOS) technology, power devices P1, P2, P3, P4, and P5 can be high-voltage PMOS transistors, and power devices Q7 and N3 can be high-voltage NMOS transistors to improve the withstand voltage of the voltage regulator circuit. For both high-voltage NMOS and high-voltage PMOS transistors, the first electrode is the source, the second electrode is the gate, and the third electrode is the drain.
[0074] Under the BCD process, power devices P1, P2, and P3 can use high-voltage PMOS transistors to improve the voltage withstand capability of the voltage regulator circuit. However, the voltage withstand capability of transistors is usually below 25V, which cannot be matched with the voltage withstand capability of high-voltage PMOS transistors. To ensure that power devices Q1, Q2, Q3, Q4, and Q6 can still use NPN transistors, a high-voltage isolation unit is incorporated into the voltage regulator circuit when fabricating it using the BCD process. This high-voltage isolation unit includes high-voltage NMOS transistors N1 and N2, and a high-voltage PMOS transistor P6.
[0075] The source of the high-voltage NMOS transistor N1 is connected to the third electrode of the power device Q1, the drain of the high-voltage NMOS transistor N1 is connected to the third electrode of the power device P1, the gate of the high-voltage NMOS transistor N1 is connected to the gate of the high-voltage NMOS transistor N2 and the gate of the high-voltage PMOS transistor P4, the source of the high-voltage NMOS transistor N2 is connected to the third electrode of the power device Q2, the drain of the high-voltage NMOS transistor N2 is connected to the third electrode of the power device P2, the source of the high-voltage PMOS transistor P4 is connected to the third electrode of the power device Q6, and the drain of the high-voltage PMOS transistor P4 is grounded.
[0076] Specifically, the high-voltage PMOS transistor P4 is used to clamp the collector voltage of transistor Q6. The high-voltage NMOS transistors N1 and N2 form a common-source, common-gate structure, ensuring a low source voltage for NMOS transistors N1 and N2, allowing power devices Q1, Q2, Q3, and Q4 to remain NPN transistors. In Example 2, the voltage withstand voltage at the cathode of the voltage regulator circuit fabricated using the BCD process can reach over 100V. Furthermore, because the transistors fabricated using the BCD process have higher amplification and MOS transistor gain, the voltage regulator circuit fabricated using the BCD process can easily guarantee a quiescent current below 100uA. This reduces circuit operating losses while meeting high-voltage application requirements, improving the overall stability of the voltage regulator circuit.
[0077] It should be noted that the terms "first" and "second" in this document are used only to distinguish the described objects and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. The above descriptions are merely preferred embodiments of the present invention, and the present invention is not limited to the above embodiments. It is understood that other improvements and variations directly derived or conceived by those skilled in the art without departing from the spirit and concept of the present invention should be considered to be included within the scope of protection of the present invention.
Claims
1. A high-precision voltage regulator circuit with zero temperature coefficient, characterized in that, It includes a voltage regulator unit with adapter connection, a first current source unit, and a second current source unit, wherein, The first current source unit is used to generate a first current I1 with a positive temperature coefficient, and the second current source unit is used to generate a second current I2 with a negative temperature coefficient. Based on the first current I1, the second current I2, and the component parameters of the voltage regulator unit, the voltage regulator unit generates a reference voltage VREF with zero temperature coefficient. The first current source unit includes a power device Q1, n power devices Q2, and a resistor R2; All power devices Q2 are connected in parallel. The second electrode of power device Q1 is connected to one end of resistor R2, and the other end of resistor R2 is connected to the second electrodes of all power devices Q2. The first electrodes of all power devices Q2 are connected to the first electrode of power device Q1. The dimensions of power devices Q2 and Q1 are the same. The first current I1 satisfies: Where VBE1 represents the voltage between the second electrode and the first electrode of power device Q1, VBE2 represents the voltage between the second electrode and the first electrode of power device Q2, VT represents the thermal voltage, and R2 represents the resistance value of resistor R2. The voltage regulator circuit also includes a first current mirror unit, which includes power device Q3 and power device Q4, wherein... The third electrode of power device Q4 is connected to the second electrode, the first electrode of power device Q3 is connected to the first electrode of power device Q4, the second electrode of power device Q3 is connected to the second electrode of power device Q4, and the third electrode of power device Q3 is connected to the first electrode of all power devices Q2 and the first electrode of power device Q1. The voltage regulator circuit also includes a third current mirror unit, which comprises power devices P1, P2, and P3. The first electrode of power device P1 is connected to the first electrode of power device P2 and the first electrode of power device P3. The second electrode of power device P1 is connected to the second electrode of power device P2 and the second electrode of power device P3. The third electrode of power device P1 is connected to the third electrode of power device Q1. The third electrode of power device P2 is connected to the second electrode. The voltage regulator unit includes a power device Q6, resistors R1, R3, and R4, wherein... One end of the resistor R3 is connected to the second electrode of all power devices Q2, the other end of the resistor R3 is connected to the third electrode of power device Q4, the third electrode of power device Q6 is connected to the third electrode of power device P3, and the first electrode of power device Q6 is connected to one end of resistor R2 and the second electrode of power device Q1 through resistor R1. One end of the resistor R4 is connected to the first electrode of the power device Q3, the first electrode of the power device Q4, and the third electrode of the power device P4, and the other end of the resistor R4 is grounded. The reference voltage VREF satisfies: Wherein, VBE6 represents the voltage between the second electrode and the first electrode of power device Q6, VBE4 represents the voltage between the second electrode and the first electrode of power device Q4, R1 represents the resistance value of resistor R1, R3 represents the resistance value of resistor R3, and R4 represents the resistance value of resistor R4.
2. The high-precision voltage regulator circuit with zero temperature coefficient according to claim 1, characterized in that, The second current source unit includes a power device Q5 and a resistor R6, wherein, One end of the resistor R6 is connected to the first electrode of the power device Q5 and grounded, and the second electrode of the power device Q5 is connected to the other end of the resistor R6. The second current I2 satisfies: Where VBE5 represents the voltage between the second electrode and the first electrode of power device Q5, and R6 represents the resistance value of resistor R6.
3. The high-precision voltage regulator circuit with zero temperature coefficient according to claim 2, characterized in that, It also includes a second current mirror unit, which comprises power device P4, power device P5, power device N3, and resistor R5, wherein... The first electrode of the power device N3 is connected to the other end of the resistor R6 and the second electrode of the power device Q5; the second electrode of the power device N3 is connected to one end of the resistor R5 and the third electrode of the power device Q5; the third electrode of the power device N3 is connected to the second electrode and the third electrode of the power device P5. The first electrode of the power device P5 is connected to the other end of the resistor R5 and the first electrode of the power device P4. The second electrode of the power device P4 is connected to the second electrode of the power device P5. The third electrode of the power device P4 is connected to the first electrode of the power device Q4.
4. The high-precision voltage regulator circuit with zero temperature coefficient according to claim 1, characterized in that, It also includes a drive compensation unit and a power device Q7, wherein the drive compensation unit controls the conduction state of the power device Q7 based on the conduction state of the power device Q1. The second electrode of the power device Q7 is connected to the output terminal of the drive compensation unit, the first electrode of the power device Q7 is grounded, and the second electrode of the power device Q7 is connected to the first electrodes of the power devices P1, P2 and P3.
5. The high-precision voltage regulator circuit with zero temperature coefficient according to claim 1, characterized in that, The voltage regulator circuit is fabricated using a bipolar process or a BCD process. When the voltage regulator circuit is fabricated using a bipolar process, power devices P1, P2, P3, P4, and P5 are PNP transistors, and power devices Q7 and N3 are NPN transistors. When the voltage regulator circuit is fabricated using the BCD process, power devices P1, P2, P3, P4, and P5 are high-voltage PMOS transistors, and power devices Q7 and N3 are high-voltage NMOS transistors.
6. The high-precision voltage regulator circuit with zero temperature coefficient according to claim 5, characterized in that, When the voltage regulator circuit is fabricated using the BCD process, the voltage regulator circuit further includes a high-voltage isolation unit, which includes a high-voltage NMOS transistor N1, a high-voltage NMOS transistor N2, and a high-voltage PMOS transistor P6, wherein... The source of the high-voltage NMOS transistor N1 is connected to the third electrode of the power device Q1, the drain of the high-voltage NMOS transistor N1 is connected to the third electrode of the power device P1, the gate of the high-voltage NMOS transistor N1 is connected to the gate of the high-voltage NMOS transistor N2 and the gate of the high-voltage PMOS transistor P4, the source of the high-voltage NMOS transistor N2 is connected to the third electrode of all power devices Q2, the drain of the high-voltage NMOS transistor N2 is connected to the third electrode of the power device P2, the source of the high-voltage PMOS transistor P4 is connected to the third electrode of the power device Q6, and the drain of the high-voltage PMOS transistor P4 is grounded.