A temperature compensated crystal oscillator compensation data storage loading circuit and method

Abstract

The present application provides a temperature compensated crystal oscillator compensation data storage and loading circuit and method, the circuit comprising: a storage-loading control module, used to convert an external serial control signal into a parallel control signal, control the data storage module to store temperature compensation data or load data from the data storage module for temperature compensation; and a data storage module, used to store compensation data according to the parallel control signal, used to read compensation data from the storage module and output it to the temperature compensation circuit; and a clock oscillation module, used to provide a working clock for the storage-loading control module. The present application can reduce the dependence on the data output or readout mode of the storage device, and meet the needs of designing and processing temperature compensated crystal oscillator circuits based on different storage devices.

Description

Technical Field

[0001] The present invention relates to the field of integrated circuit applications, and in particular to a temperature compensated crystal oscillator compensation data storage and loading circuit and method. Background Art

[0002] With the development of science and technology, crystal oscillators with higher temperature stability (for example, within ±0.28ppm) are needed to improve system performance. Due to the process deviation of integrated circuit processing, each temperature compensated crystal oscillator needs to be tested and adjusted at different temperatures for many times to make its temperature stability meet the requirements of technical indicators. Corresponding compensation data is generated during the test and adjustment work at different temperature points, and the final compensation configuration data is formed after all temperature points are tested. The temperature compensation circuit achieves the highest stability under this data configuration state.

[0003] However, the existing integrated circuit process of temperature compensation circuits generally does not provide non-volatile memory devices that can directly output data, and cannot directly output the required compensation data after power-on. In addition, self-developed dedicated memory devices are usually special process devices with high design difficulty, long R&D costs and cycles, and cannot meet the actual production application needs. Summary of the invention

[0004] In view of the above problems existing in the prior art, the present invention proposes a temperature compensated crystal oscillator compensation data storage and loading circuit and method, which mainly solves the problem that the existing temperature compensation circuit lacks compensation data storage and loading functions, and lacks an adaptive direct output storage device.

[0005] In order to achieve the above purpose and other purposes, the technical solution adopted by the present invention is as follows.

[0006] The present application provides a temperature compensated crystal oscillator compensated data storage and loading circuit, comprising: a storage-loading control module, used to convert an external serial control signal into a parallel control signal, control the data storage module to store temperature compensation data or load data from the data storage module for temperature compensation; a data storage module, used to store and output compensated data according to the parallel control signal; and a clock oscillation module, used to provide a working clock for the storage-loading control module.

[0007] In one embodiment of the present application, the storage-loading control module includes: a serial-to-parallel converter, which converts the serial control signal into serial-to-parallel to obtain multiple parallel control signals; a data parser, which receives the multiple parallel control signals and parses each of the parallel control signals to determine the corresponding memory operation; and a controller, which generates a corresponding memory operation signal based on the state of the state machine and outputs it to the data storage module to write the temperature compensation data into the storage module.

[0008] In one embodiment of the present application, the controller includes: a state machine, which is used to determine the current circuit working state, whether the temperature compensation data needs to be loaded, and the reading state of the data storage module; a switch component, which controls the switching state of the data storage module and the clock oscillation module based on the state of the state machine; an address operation component, which accumulates the memory address based on the state of the state machine and determines whether the memory address exceeds the maximum address; a data reading component, which is used to read the temperature compensation data from the corresponding address of the data storage module; a cache component, which is used to cache the temperature compensation data; and a data output component, which is used to output the temperature compensation data to the data compensation circuit.

[0009] In an embodiment of the present application, the storage module includes: OTP, EEPROM, eFLASH, MTP or EFUSE.

[0010] The present application also provides a method for compensating a data storage loading circuit using the temperature compensated crystal oscillator, comprising: converting an external serial control signal into a parallel control signal; performing compensated data storage according to the parallel control signal, and providing a working clock to read temperature compensation data from the data storage module based on the working clock and the circuit working state and output it to the temperature compensation circuit.

[0011] As described above, the temperature compensated crystal oscillator compensation data storage loading circuit and method of the present invention have the following beneficial effects.

[0012] The present application introduces a storage-loading control module to convert an external serial control signal into a parallel control signal to control the storage module to realize the storage function, and uses the clock signal provided by the clock oscillation module to drive the storage-loading control module to read the compensation data in the storage module and output it to the data interface of the temperature compensation circuit. Based on the adaptation of the storage-loading control module and the storage module, the use requirements of different types of storage modules can be met, avoiding the reliance on the direct data output function of the memory device. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] Figure 1 It is a schematic diagram of the structure of an existing non-volatile memory that directly outputs data.

[0014] Figure 2 The following is a timing diagram for reading data from an existing general non-volatile memory.

[0015] Figure 3 Schematic diagram of the structure of a compensation data storage loading circuit of a temperature compensated crystal oscillator in one embodiment of the present application.

[0016] Figure 4This is an overall flow chart of a storage control unit controlling a storage module based on an external serial control signal in one embodiment of the present application.

[0017] Figure 5 This is a schematic diagram of a flow chart of loading a control unit to read temperature compensation data in a storage module in an embodiment of the present application.

[0018] Figure 6 Detailed description is a flow chart of a method for compensating a data storage loading circuit by using a temperature compensated crystal oscillator in one embodiment of the present application. DETAILED DESCRIPTION

[0019] The following describes the embodiments of the present invention by specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and the details in this specification can also be modified or changed in various ways based on different viewpoints and applications without departing from the spirit of the present invention. It should be noted that the following embodiments and features in the embodiments can be combined with each other without conflict.

[0020] It should be noted that the illustrations provided in the following embodiments are only schematic illustrations of the basic concept of the present invention, and thus the drawings only show components related to the present invention rather than being drawn according to the number, shape and size of components in actual implementation. In actual implementation, the type, quantity and proportion of each component may be changed arbitrarily, and the component layout may also be more complicated.

[0021] The inventors have found that:

[0022] With the development of science and technology, higher temperature stability is required, such as crystal oscillators within ±0.28ppm, to improve system performance. Due to the process deviation of integrated circuit processing, each temperature compensated crystal oscillator needs to be tested and adjusted at different temperatures for multiple times to make its temperature stability meet the requirements of technical indicators. Corresponding compensation data is generated during the test and adjustment work at different temperature points, and the final compensation configuration data is formed after all temperature points are tested. The temperature compensation circuit of the temperature compensated crystal achieves the highest stability under this data configuration state. In order to make the temperature compensated crystal oscillator simple and easy to use, a non-volatile memory is required to store the data, and the compensation data is output to the temperature compensation circuit after the crystal oscillator is powered on.

[0023] At present, foreign temperature compensated crystal oscillator products directly output data through non-volatile memory such as Figure 1The compensation data is stored, that is, the temperature compensation circuit requires N bit compensation data, then after the circuit is powered on, the non-volatile memory directly outputs N bit compensation data to control the temperature compensation circuit to make it work in the highest temperature stability state. This solution requires that the integrated circuit process platform, that is, the device with direct data output function, also has a process platform suitable for the design of temperature compensation circuits. Therefore, foreign temperature compensation crystal oscillators are mostly designed using their own process platforms, and the relevant process platforms and related technologies are not open to the outside world.

[0024] At present, the integrated circuit processes provided by integrated circuit foundries at home and abroad all provide corresponding devices for the corresponding integrated circuit fields. The integrated circuit processes suitable for the design of temperature compensated crystal oscillator circuits generally do not provide non-volatile memory devices that directly output data, but can provide non-volatile memory that is accessed by address through read and write control bits. See Figure 2 , the required compensation data cannot be output directly after power-on. The lack of suitable temperature compensation data storage devices has become a difficulty in designing temperature compensated crystal oscillator circuits. To solve this problem, it is necessary to ask the integrated circuit foundry to customize or develop dedicated non-volatile memory devices by itself. However, non-volatile memory is a special process device, and the design of this device has high technical difficulty. Customizing or developing this device by yourself faces the dual risks of technology and progress.

[0025] See also Figure 3 , Figure 3 The schematic diagram of the structure of the compensation data storage and loading circuit of the temperature compensated crystal oscillator in one embodiment of the present application. The circuit provided by the embodiment of the present application includes: a storage-loading control module 02, which is used to convert an external serial control signal into a parallel control signal; a storage module 03, which is used to store compensation data according to the parallel control signal; and a clock oscillation module 01, which is used to provide a working clock for the storage-loading control module 02, so that the storage-loading control module 02 reads the compensation data from the storage module 03 based on the oscillation clock and outputs it to the temperature compensation circuit 04. The storage-loading control module 02 can perform a write operation on the storage module 03 during the test and adjustment, and control the read operation of the non-volatile memory and the configuration temperature compensation circuit operation when powered on. In the test and adjustment stage, the storage-loading control module 02 performs serial-to-parallel conversion on the external serial control signal, performs logic judgment on the converted multi-channel parallel signals, and performs an erase and write operation on the storage device according to the logic judgment result, thereby realizing the storage function of the temperature compensation data. After power-on reset, the storage-loading control module 02 implements address access, read operation, control bit operation and output data cache operation of the storage module 03 through the clock signal provided by the clock oscillation circuit, thereby realizing the loading function of the temperature compensation data.

[0026] In one embodiment, the storage-loading control module 02 includes: a storage control unit, which converts the external serial control signal into a parallel control signal, and configures the corresponding memory operation based on the content of the parallel control signal to control the storage module 03 to store the compensation data; and a loading control unit, which is connected to the clock oscillation module 01, so as to access the storage module 03 address by address based on the oscillation clock after power-on to load the compensation data and output it to the temperature compensation circuit 04. For details, please refer to Figure 4 , Figure 4 The overall flow chart of the storage control unit controlling the storage module 03 based on the external serial control signal in one embodiment of the present application. First, after receiving the control signal, the storage control module performs serial-to-parallel conversion to obtain a parallel control signal. By parsing the content of the parallel control signal, a logical operation is performed with the corresponding operation of the memory, and then the memory operation corresponding to the content of the parallel control signal is determined. For example, it can be determined whether the parallel control signal is a memory address operation, if so, the corresponding memory address is configured, if not, a logical judgment of the next operation is performed; it can be determined whether the parallel control signal is a memory erase operation, if so, the memory erase signal is configured, if not, a logical judgment of the next operation is performed; it can be determined whether the parallel control signal is a memory data operation, if so, the memory write data is configured, if not, a logical judgment of the next operation is performed; it can be determined whether the parallel control signal is a memory write operation, if so, the memory write operation is configured. Based on the aforementioned logical judgment, the memory operation corresponding to each parallel control signal can be determined, and the specific order of logical judgment and the operation type can be set and adjusted according to actual application requirements, and there is no restriction here.

[0027] See also Figure 5 , Figure 5 The flowchart of the loading control unit reading the temperature compensation data in the storage module 03 in one embodiment of the present application is shown in FIG. After the loading control unit completes the power-on reset, the on / off state of the storage module 03 can be controlled. After the memory is turned on, the validity of the data in the memory can be verified. The specific verification method can be circuit signal detection, comparison data check code, etc. The verification method can be selected and adjusted according to the actual application requirements, and is not limited here. After determining that the memory data is valid, access is started from the first address of the memory according to the oscillation clock provided by the clock oscillation module 01 (exemplarily, address access is performed when the oscillation always rises), and the data in the current address is loaded to the compensation data interface of the temperature compensation circuit 04, and address accumulation is performed to access the next address until the clock oscillation module 01 is closed after completing the access to all addresses of the memory.

[0028] In one embodiment, the storage control unit includes: a serial-to-parallel converter; a data parser, which receives multiple parallel control signals output by the serial-to-parallel converter, and parses each parallel control signal to determine the corresponding memory operation; and a controller, which generates a corresponding memory operation instruction based on the memory operation to output to the storage module 03. Specifically, the number of conversion bits of the serial-to-parallel converter can be configured and adjusted according to actual application requirements. Taking a 1-to-N serial-to-parallel converter as an example, an external serial control signal can be input into the 1-to-N serial-to-parallel converter to obtain N parallel control signals. The data parser may include one or more logic operation devices, which perform logic operations on the content in the parallel control signal and the preset memory operation, and then determine whether the parallel control signal is consistent with one of the preset memory operations. The specific logic operation device can use AND operation, OR operation, etc., which can be set and adjusted according to actual application requirements, and is not limited here. The controller receives the logic judgment result of the data parser and configures the corresponding memory operation. The controller can be an MCU or other logic function device.

[0029] In one embodiment, the loading control unit includes: a switch component for controlling the switch state of the storage module 03 and the clock oscillation module 01; an address operation component for accumulating memory addresses and determining whether the memory addresses exceed the maximum address; a data reading component for reading the compensation data from the corresponding address of the storage module 03; a cache component for caching the compensation data; and a data output component for outputting the compensation data to the data compensation circuit. Specifically, the switch component can be one or more relays, which can control the relays to conduct when powered on, thereby turning on the constant oscillation module and the storage module 03. The address operation component can be an adder or other logic device that can realize the counting function. The address operation component, the data reading component, the data output component and the cache component constitute a memory data loading state machine, which realizes the address access, read operation, control bit operation and cache operation of the memory output data of the general non-volatile memory through the oscillation clock provided by the clock oscillation module 01 after power-on reset, and realizes the loading function of the temperature compensation data.

[0030] In one embodiment, the storage module 03 may be OTP, EEPROM, eFLASH, MTP, EFUSE, etc. When different types of storage modules 03 are selected, only simple modifications need to be made to the storage-loading control module 02 to adapt to different integrated circuit foundries and different non-volatile memories.

[0031] Based on the technical solution of the above embodiment of the present application, the control signal of the temperature compensated crystal oscillator circuit is converted by introducing a storage-loading control module 02, and the serial control signal is converted into a parallel control signal of a universal non-volatile memory, so as to realize the storage function of the compensation data. The clock oscillation module provides a clock signal to drive the loading control unit to read the temperature compensation data stored in the non-volatile memory and output it to the data interface of the temperature compensation circuit 04. The storage-loading circuit only needs simple modification to adapt to different types of non-volatile memories provided by different integrated circuit foundries, avoiding the dependence of the temperature compensated crystal oscillator on the memory device, so that the design of the temperature compensated crystal oscillator can focus on the support of the integrated circuit process for the temperature compensation circuit 04.

[0032] See also Figure 6 , Figure 6 This is a flow chart of a method for compensating a data storage loading circuit using a temperature compensated crystal oscillator in an embodiment of the present application. The method comprises the following steps:

[0033] Step S600, converting an external serial control signal into a parallel control signal;

[0034] Step S610 , storing compensation data according to the parallel control signal, and providing an oscillation clock, so as to read the compensation data from the storage module 03 based on the oscillation clock and output it to the temperature compensation circuit 04 .

[0035] The process of implementing the storage and loading functions of the specific circuit has been described in detail in the aforementioned circuit embodiment and will not be repeated here.

[0036] The above embodiments are merely illustrative of the principles and effects of the present invention, and are not intended to limit the present invention. Anyone familiar with the art may modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by a person of ordinary skill in the art without departing from the spirit and technical concept disclosed by the present invention shall still be covered by the claims of the present invention.

Claims

1. A temperature compensated crystal oscillator compensation data storage loading circuit, characterized in that: include: A storage-loading control module, used for converting an external serial control signal into a parallel control signal, controlling the data storage module to store temperature compensation data or loading data from the data storage module for temperature compensation; A data storage module, used for storing and outputting compensation data according to the parallel control signal; as well as, The clock oscillation module is used to provide a working clock for the storage-loading control module.

2. The temperature compensated crystal oscillator compensation data storage loading circuit according to claim 1, characterized in that: The storage-loading control module includes: A serial-to-parallel converter, performing serial-to-parallel conversion on the serial control signal to obtain multiple parallel control signals; a data parser, which receives a plurality of parallel control signals and parses each parallel control signal to determine a corresponding memory operation; and The controller generates a corresponding memory operation signal based on the state of the state machine and outputs the signal to the data storage module to write the temperature compensation data into the storage module.

3. The temperature compensated crystal oscillator compensation data storage loading circuit according to claim 2, characterized in that: The controller comprises: A state machine, used to determine the current circuit working state, whether the temperature compensation data needs to be loaded, and the reading state of the data storage module; A switch component, which controls the switch states of the data storage module and the clock oscillation module based on the state of the state machine; An address calculation component, which accumulates memory addresses based on the state of the state machine and determines whether the memory address exceeds a maximum address; A data reading component, used for reading the temperature compensation data from a corresponding address of the data storage module; a cache component, used for caching the temperature compensation data; and The data output component is used to output the temperature compensation data to the data compensation circuit.

4. The temperature compensated crystal oscillator compensation data storage and loading circuit according to any one of claims 1 to 3, characterized in that: The storage module includes: OTP, EEPROM, eFLASH, MTP or EFUSE.

5. A method for compensating a data storage loading circuit using a temperature compensated crystal oscillator according to any one of claims 1 to 4, characterized in that: include: Convert external serial control signals into parallel control signals; Temperature compensation data is stored according to the parallel control signal, and a working clock is provided, so as to read the temperature compensation data from the data storage module based on the working clock and the circuit working state and output it to the temperature compensation circuit.

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