Rapid aging test method and device for memory array

Abstract

The invention discloses a rapid aging test method and device for a memory array, and relates to the technical field of memory array test. Comprising the following steps: in a read-write operation process, capturing an instantaneous current waveform of each storage unit in a memory array, extracting current characteristics from the instantaneous current waveform, constructing a difference matrix by utilizing the extracted current characteristics, and dynamically marking the storage units exceeding a threshold value. According to the invention, by analyzing the difference of the stored data volume before and after the instantaneous current waveform capture of the storage unit, the capacity recession condition of the storage unit is evaluated, and the capacity recession data is used as an auxiliary evaluation index and combined with the aging rate of the storage unit. According to the invention, comprehensive evaluation of the aging degree of the memory units is completed without applying external influence conditions to the memory array, so that the accuracy of the aging test is improved, the aging difference between the memory units can be effectively identified, and the key memory units are ensured to be processed and maintained in time.

Description

Technical Field

[0001] The present invention relates to the technical field of memory array testing, and in particular to a rapid aging testing method and device for a memory array. Background Art

[0002] A memory array is a storage structure composed of multiple storage cells arranged in rows and columns. In the memory array, a large number of storage cells are organized together to form a dense storage network, making data storage and reading efficient and fast. Since the performance and reliability of the memory array are crucial to the operation of the entire electronic device, it is necessary to design a rapid aging test method and device for the memory array.

[0003] After searching, the Chinese invention patent with announcement number "CN113380312A" discloses a memory array testing method and system. The application heats the NVM array to a target temperature, and while heating the NVM array to the target temperature, obtains a current distribution by measuring multiple currents of a subset of NVM cells of the NVM array, programs each NVM cell of the NVM array to one of a logic high state or a logic low state, and performs a first pass / fail (P / F) test and a second pass / fail (P / F) test on each NVM cell of the NVM array, and calculates a bit error rate based on the current distribution and the first P / F test and the second P / F test.

[0004] In addition, the Chinese invention patent with announcement number "CN114187955A" discloses a test method, device, equipment and storage medium for a memory array. The application performs preset read and write operations on the memory array after storing a charge greater than the pre-charge amount after lowering the capacitor plate voltage, so that the capacitor voltage of the storage unit in the memory array changes continuously, thereby increasing the exposure probability of capacitor plate leakage failure and easily detecting potential capacitor plate leakage failure in the memory array.

[0005] In order to ensure the normal operation of electronic devices, there is an urgent need for a rapid aging test method and device that can be performed without affecting the normal operation of electronic devices. However, according to some existing testing methods, for example, the methods shown in the two related invention patents disclosed above and similar related patents, although certain performance changes of the memory array can be detected to a certain extent, these methods require the application of external conditions that may cause damage to the memory array, such as temperature and voltage. Therefore, this study proposes an innovative rapid aging test method and device, the purpose of which is to complete the rapid aging test of the memory array without causing additional damage to the memory array. Summary of the invention

[0006] The object of the present invention is to provide a method and device for rapid aging testing of a memory array to solve the problems raised in the above background technology.

[0007] To achieve the above object, the present invention provides the following technical solutions: In a first aspect, a rapid aging test method for a memory array is proposed, comprising: During the read and write operations, the instantaneous current waveform of each memory cell in the memory array is captured and the current characteristics are extracted therefrom; A difference matrix is ​​constructed using the extracted current features to dynamically mark the memory cells that exceed the threshold; An aging trajectory model is constructed, which takes the instantaneous current waveform of storage cells with different labels in time series as input and the current characteristics as output, so as to obtain the aging rate. The aging trajectory model is used to judge the aging degree of storage cells through the waveform of instantaneous current, so as to predict the subsequent failure points of the storage array in advance. Assigning priority weights to marked storage units according to aging rates; Obtain storage capacity of storage units under different priority weights; Applying a pressure gradient proportional to the storage capacity according to the characteristic ratio of the current; Evaluate the capacity decay of a storage unit based on the degree of change of the pressure gradient within a single storage unit in the time series; The evaluation results are associated with priority weights to obtain the degree of aging replacement needs of storage units within the storage.

[0008] As a further preferred embodiment of the present technical solution, the current characteristics include: an absolute deviation value of a current peak value and an integrated charge amount; The current feature extraction method includes: obtaining arrangement characteristics of memory cells in a memory array; Based on the arrangement characteristics, a high-frequency sampling circuit is connected to each storage unit; According to the read and write operation frequency of the storage array, an adjustable resistor is added in series in the high-frequency sampling circuit, and the adjustable resistor is used to adjust the sampling frequency to keep synchronization with the read and write operation frequency; The high-frequency sampling circuit obtains the absolute deviation value of the current peak value of the integrated storage unit according to the extraction algorithm, and integrates the charge quantity, the rising edge slope and the energy distribution characteristics in the time-frequency domain.

[0009] As a further preferred embodiment of the present technical solution, the number of the extraction algorithms matches the number of current feature types, and includes an absolute deviation value extraction algorithm and an integral charge extraction algorithm; The absolute deviation value extraction algorithm is: ,in is the current peak value, and the current waveform is sampled using a high-frequency sampling circuit during the time period (t1, t2). Sampling is performed to obtain a series of discrete points The value of k ranges from 1 to M, where M is the number of sampling points. is the absolute deviation of the current peak value, the current peak value For the The maximum value within the sampling period, that is, , is the average value of the current peak value, which is obtained by averaging the current peak values ​​in multiple sampling cycles, and n is the maximum value collected, that is, ; The integrated charge extraction algorithm is: ,in and are the start time and end time of the read and write operations respectively. is the sampling interval, For the The integrated charge of Indicates at a point in time K represents the number of sampling points, that is, how many times the current value is measured.

[0010] As a further preferred embodiment of the present technical solution, the threshold value set based on the absolute deviation value of the current peak value is 1.5 to 2 times the average value of the absolute deviation value of the current peak value, and the threshold value set based on the integrated charge amount is 1.2 to 1.8 times the average value of the integrated charge amount. When the current characteristic of the storage unit exceeds any of the above thresholds, it is marked as an abnormal storage unit; The difference matrix is ​​constructed by taking each storage unit as a row of the matrix and the current characteristic as a column of the matrix, and filling the current characteristic value of each storage unit into the corresponding row and column position to form a difference matrix.

[0011] As a further preferred embodiment of the present technical solution, the method for constructing the aging trajectory model includes: Segmentally sampling the historical current waveform in the marked storage unit; Extract the time series data set based on the segmented sampling results; Extract instantaneous current characteristic values ​​based on the time series data set; According to the material properties of the storage array, matching material degradation factor values ​​and aging rate coefficients are retrieved from the Internet; A functional correlation formula between the instantaneous current characteristic value in time series and the material degradation factor value and aging rate coefficient is established.

[0012] As a further preferred embodiment of the present technical solution, the function correlation formula is: ; in is the cumulative degradation within time t, indicating the degree of storage unit performance degradation. is the material degradation factor value, and are the aging rate coefficients, is the peak current in the i-th time period, used to represent the instantaneous current characteristic value, is the current change rate in the i-th time period, Used to indicate time segment intervals.

[0013] As a further preferred embodiment of the present technical solution, the pressure gradient acting on the storage capacity is used to represent the total amount of data information that can be stored in the storage unit; The method for evaluating the attenuation of the storage unit content includes: Obtain the difference in the total amount of data information before and after the instantaneous current waveform; A capacity attenuation evaluation formula is constructed based on the difference in the total amount of data information, the storage capacity, and the current characteristics of the instantaneous current waveform; The capacity decay rate of the storage unit is obtained according to the capacity decay evaluation formula. The capacity decay rate is used to quantify the performance degradation of the storage unit in a unit time period. The higher the capacity decay rate, the more serious the aging of the storage unit.

[0014] As a further preferred embodiment of the present technical solution, the capacity decay evaluation formula is: ; in Used to indicate the relative degree of data loss of a storage unit during an aging test. It is used to express the contribution of quantitative current to aging. The larger the current or the longer the action time, the more significant the accelerated aging effect. It is used to indicate the difference in the total amount of data information before and after the instantaneous current waveform. The charge integral of the instantaneous current waveform during the test period, is the maximum storage capacity of the storage unit, Used to indicate capacity decay rate.

[0015] In the second aspect, in order to improve the above-disclosed rapid aging test method for a memory array, a rapid aging test device for a memory array is also proposed. It should be noted that the rapid aging test device for a memory array uses the above-disclosed rapid aging test method for a memory array and includes: A current capture module, used to capture the instantaneous current waveform of each memory cell in the memory array during read and write operations; A feature extraction module, connected to the current capture module, for extracting current features from the captured instantaneous current waveform; A difference matrix construction module, connected to the feature extraction module, is used to construct a difference matrix according to the extracted current features and dynamically mark the storage cells exceeding the threshold; An aging trajectory model building module is connected to the difference matrix building module and is used to take the instantaneous current waveform of the storage unit with different labels under the time series as input and the current characteristics as output to build an aging trajectory model, so as to obtain the aging rate; A priority weight assignment module, connected to the aging trajectory model construction module, is used to assign priority weights to the marked storage units according to the aging rate; A storage capacity acquisition module, connected to the priority weight allocation module, is used to acquire the storage capacity of the storage unit under different priority weights; A pressure gradient applying module, connected to the storage capacity acquisition module, is used to apply a pressure gradient proportional to the storage capacity according to the current characteristic ratio; The capacity attenuation assessment module is connected to the pressure gradient application module and is used to assess the capacity attenuation of the storage unit based on the degree of change of the pressure gradient in a single storage unit in a time series, and associate the assessment result with the priority weight to obtain the degree of aging replacement requirement of the storage unit in the memory.

[0016] Compared with the prior art, the present invention has the following beneficial effects: The rapid aging test method and device for a memory array monitors the current characteristics of the memory array during read and write operations to identify the aging rate of the memory cells, and divides the memory cells into priority weights based on the quantified data of the aging rate, thereby ensuring that the memory cells are given targeted attention and processing according to the priority. Furthermore, by analyzing the difference in the amount of data stored in the storage cell before and after the instantaneous current waveform is captured, the decay of the storage cell capacity is evaluated, and the capacity decay data is used as an auxiliary evaluation indicator. Combined with the storage cell aging rate, a comprehensive evaluation of the degree of storage cell aging is achieved without imposing external influencing conditions on the storage array. This not only improves the accuracy of the aging test, but also can effectively identify the aging differences between storage cells, ensuring that key storage cells receive timely processing and maintenance. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 A flowchart of the steps of the method disclosed in the present invention; Figure 2 A schematic diagram of a high-frequency sampling circuit connected in series in a memory array of the present invention; Figure 3A schematic diagram of a high-frequency sampling circuit connected in parallel in a memory array of the present invention; Figure 4 This is a module composition diagram of the device disclosed in the present invention. DETAILED DESCRIPTION

[0018] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0019] Before understanding the technical solution proposed in the present invention, it should be clear that as a core component of data storage, the performance stability and data reliability of the memory array are of vital importance. However, as the use time increases, the memory unit will gradually age due to various factors, resulting in a decrease in storage performance or even data loss. In order to effectively monitor and manage the aging problem of the memory unit, the present invention proposes an innovative rapid aging test method, which aims to evaluate the aging degree of the memory unit without applying external conditions that may cause damage to the memory array to the outside of the memory array, thereby providing a scientific basis for subsequent maintenance and processing.

[0020] Specifically, the present invention proposes a rapid aging test method for a memory array, referring to Figure 1 It can be seen that it includes: step S100-step S800.

[0021] Step S100: During the read and write operations, the instantaneous current waveform of each memory cell in the memory array is captured, and the current characteristics are extracted therefrom.

[0022] It should be clear that step S100 in the present invention is used to collect the current characteristics of the memory cell during normal operation. The current characteristics can help accurately determine whether the memory cell shows signs of aging and the degree of aging, and can help to subsequently accurately carry out the evaluation of the degree of aging of the memory cell based on these basic data.

[0023] It should be added that the current characteristics in step S100 include: the absolute deviation value of the current peak and the integrated charge, wherein the absolute deviation value of the current peak is used to indicate the degree of fluctuation of the current waveform at the peak value, reflecting the stability of the current of the storage unit during the read and write operations, and the integrated charge is used to indicate the charge accumulation of the storage unit during the read and write operations, and the size of the charge accumulation is directly related to the performance and life of the storage unit.

[0024] Specifically, the method for capturing the instantaneous current waveform in step S100 is achieved by connecting a high-frequency sampling circuit to each storage unit of the memory array. It should be added that the high-frequency sampling circuit captures the instantaneous current changes of the storage unit during reading and writing because the high-frequency sampling circuit quickly captures and converts the instantaneous current, so that the continuous current changes are recorded as discrete digital signals, and finally these digital signals are stored and recorded by the storage unit.

[0025] Specifically, refer to Figure 2 and Figure 3 It can be seen that in the present invention, the high-frequency sampling circuit has two specific forms. One form is applicable to a storage array formed by storage units connected in series, and the other form is applicable to a storage array formed by storage units connected in parallel. In the series form, the high-frequency sampling circuit is designed to be connected in series with each storage unit, so that the instantaneous current of each storage unit can be directly measured. In the parallel form, the high-frequency sampling circuit is connected to each storage unit through a multiplexer to achieve time-sharing measurement of the instantaneous current of different storage units. Both forms of high-frequency sampling circuits can capture the instantaneous current waveform of the storage unit during the read and write operations.

[0026] Furthermore, it should be supplemented that the method for extracting current characteristics in step S100 includes: steps S101 to S104.

[0027] Step S101: Acquire arrangement characteristics of storage cells in a memory array.

[0028] Step S102: Based on the arrangement characteristics, a high-frequency sampling circuit is connected to each storage unit.

[0029] Step S103: adding an adjustable resistor in series in the high-frequency sampling circuit according to the read and write operation frequency of the memory array.

[0030] It should be clear that in step S103, the adjustable resistor is used to adjust the sampling frequency to keep synchronized with the read and write operation frequency. In addition, it should be noted that a high-frequency current waveform sampler for obtaining an instantaneous current waveform is provided in the high-frequency sampling circuit. Since the high-frequency current waveform sampler is a mature technical product in the current electrical acquisition field, the specific structure and working principle of the high-frequency current waveform sampler will not be described in detail in the present invention.

[0031] Step S104: the high-frequency sampling circuit obtains the absolute deviation value of the current peak value of the integrated storage unit according to the extraction algorithm and integrates the charge amount.

[0032] It should be clear that during the actual operation of steps S101-S104, the instantaneous current waveform data captured by the high-frequency sampling circuit is transmitted to the feature extraction module through the data line. The feature extraction module analyzes the received instantaneous current waveform data and calculates the absolute deviation value and the integrated charge of the current peak value according to the preset extraction algorithm. These characteristic values ​​are recorded in real time and stored in the feature database for subsequent steps.

[0033] As a preferred implementation, the number of extraction algorithms in step S100 matches the number of current feature types, and includes an absolute deviation value extraction algorithm and an integrated charge extraction algorithm.

[0034] Specifically, the absolute deviation value extraction algorithm is: ,in is the current peak value, and the current waveform is sampled using a high-frequency sampling circuit during the time period (t1, t2). Sampling is performed to obtain a series of discrete points The value of k ranges from 1 to M, where M is the number of sampling points. is the absolute deviation of the current peak value, the current peak value For the The maximum value within the sampling period, that is, , is the average value of the current peak value, which is obtained by averaging the current peak values ​​in multiple sampling cycles, and n is the maximum value collected, that is, ; In addition, the integral charge extraction algorithm is: ,in and are the start time and end time of the read and write operations respectively. is the sampling interval, For the The integrated charge of Indicates at a point in time K represents the number of sampling points, that is, how many times the current value is measured.

[0035] It should be added that when the absolute deviation value extraction algorithm and the integral charge extraction algorithm are put into actual use, assuming that the sampling start time is 0s, the end time is 1s, the sampling interval is 0.01s, and the number of sampling points N is 100, the current sampling value is , It is 0.3A.

[0036] At this time, M=10 sampling cycles were carried out, and the current peak number obtained was ,therefore The absolute deviation is .

[0037] In addition, assuming that within a sampling period, the current sampling value is , so the integrated charge is .

[0038] Step S200: constructing a difference matrix using the extracted current features, and then dynamically marking the storage cells exceeding the threshold.

[0039] It should be clear that step S200 in this application is used to perform status monitoring and preliminary determination of the degree of aging of the storage unit based on the current characteristic data. Specifically, the difference matrix is ​​constructed with each storage unit as a row identifier and the current characteristic (such as the absolute deviation value and the integrated charge of the current peak) as a column identifier. The extracted current characteristic values ​​are filled in the corresponding row and column positions one by one to form a complete difference matrix. This matrix intuitively shows the performance differences of each storage unit in different current characteristics, which is convenient for subsequent analysis.

[0040] Furthermore, in order to accurately identify aging storage cells, it is necessary to set reasonable thresholds. Based on a large amount of experimental data and statistical analysis, the present invention preferably uses 1.5 to 2 times the average value of the absolute deviation value of the current peak as the threshold of the absolute deviation value, and 1.2 to 1.8 times the average value of the integrated charge as the threshold of the integrated charge. When any current characteristic value of the storage cell exceeds the above-mentioned set threshold, it is automatically marked as an abnormal storage cell.

[0041] In addition, it should be added that the implementation of step S200 not only realizes the preliminary screening of the aging status of the storage unit, but also provides an important data basis for the construction of the subsequent aging trajectory model, ensuring the efficiency and accuracy of the aging test.

[0042] It should be further added that the method for constructing the difference matrix in step S200 is: taking each storage unit as a row of the matrix and the current characteristic as a column of the matrix, filling the current characteristic value of each storage unit into the corresponding row and column position to form a difference matrix.

[0043] Step S300: construct an aging trajectory model, taking the instantaneous current waveform of the storage unit with different labels in the time series as input and the current characteristics as output, so as to obtain the aging rate.

[0044] It should be understood that the aging trajectory model is used to determine the aging degree of the memory cell through the waveform of the instantaneous current, so as to predict the subsequent failure points of the memory array in advance.

[0045] In addition, it is necessary to supplement step S300 that the method for constructing the aging trajectory model includes: steps S301 to S305.

[0046] Step S301: Segmentally sample the historical current waveform in the marked storage unit.

[0047] It should be understood that segmented sampling refers to dividing the entire historical current waveform of the storage unit into multiple time periods, and the current waveform in each time period is sampled independently to analyze the current characteristic changes in each time period in detail.

[0048] Step S302: extracting a time series data set based on the segmented sampling results.

[0049] Step S303: extracting instantaneous current characteristic values ​​according to the time series data set.

[0050] Step S304: According to the material properties of the storage array, searching the Internet for matching material degradation factor values ​​and aging rate coefficients.

[0051] Step S305: establishing a functional correlation formula between the instantaneous current characteristic value in the time series and the material degradation factor value and the aging rate coefficient.

[0052] It should be noted that the function association formula is ; in is the cumulative degradation within time t, indicating the degree of storage unit performance degradation. is the material degradation factor value, and are the aging rate coefficients, is the peak current in the i-th time period, used to represent the instantaneous current characteristic value, is the current change rate in the i-th time period, used to represent the time segment interval.

[0053] It should be added that the function correlation formula takes into account multiple factors to accurately reflect the aging of the storage unit, among which the cumulative degradation As a core indicator, it directly reflects the degree of performance degradation of the storage unit over time. The material degradation factor value M is an intrinsic factor affecting aging. Its value is directly related to the durability and stability of the storage unit material, while the aging rate coefficient and It reflects the aging speed of the storage unit under different conditions and is a key parameter for evaluating the life of the storage unit. In addition, in terms of instantaneous current characteristic values, the peak current and current change rate in the i-th time period The included function association formulas represent the current intensity and current fluctuation of the storage unit in a unit time period, respectively, and can sensitively capture the subtle features of the performance changes of the storage unit. In addition, the introduction of time segment intervals enables the function association formula to more carefully analyze the aging of the storage unit in different time periods, thereby improving the accuracy and reliability of the test. It should be noted that in actual use of this application, the unit time can be limited to 1 minute.

[0054] Step S400: assigning priority weights to marked storage units according to aging rates.

[0055] It should be noted that the priority weights in step S400 are allocated from high to low according to the aging rate.

[0056] Step S500: Obtain storage capacity of storage units under different priority weights.

[0057] Step S600: applying a pressure gradient proportional to the storage capacity according to the current characteristic ratio.

[0058] It should be clear that the pressure gradient acting on the storage capacity is used to represent the gradient of the total amount of data information that the storage unit can store.

[0059] Step S700: Evaluate the capacity decay of the storage unit according to the degree of change of the pressure gradient in a single storage unit in the time series.

[0060] It should be understood that the method for evaluating the storage unit capacity attenuation in step S700 includes: step S701 to step S703.

[0061] Step S701: Obtain the difference in the total amount of data information in the time period before and after the instantaneous current waveform.

[0062] Step S702: constructing a capacity decay evaluation formula based on the difference in the total amount of data information, the storage capacity, and the current characteristics of the instantaneous current waveform.

[0063] Step S703: Obtain the capacity decay rate of the storage unit according to the capacity decay evaluation formula.

[0064] It should be clear that the capacity decay rate is used to quantify the performance degradation of a storage unit within a unit time period. The higher the capacity decay rate, the more serious the aging of the storage unit.

[0065] As a supplement to step S702, the capacity decay evaluation formula is: ; in Used to indicate the relative degree of data loss of a storage unit during an aging test. It is used to express the contribution of quantitative current to aging. The larger the current or the longer the action time, the more significant the accelerated aging effect. It is used to indicate the difference in the total amount of data information before and after the instantaneous current waveform. The charge integral of the instantaneous current waveform during the test period, is the maximum storage capacity of the storage unit, Used to indicate capacity decay rate.

[0066] As a preferred implementation strategy, the following preparations must be completed before applying the capacity fade assessment formula to actual operations.

[0067] First, prepare for the test Selected storage array: Assume that there is a 100GB storage array (i.e. =100GB) storage array.

[0068] Build a test environment: Build a test platform to ensure that the capacity and current of the memory can be accurately measured.

[0069] The test parameters were set as follows: a voltage of 3.3 V was applied and the aging test duration was 1000 hours.

[0070] Next, perform the aging test process Initial capacity measurement: Before the aging test begins, the initial capacity of the memory array is measured to be 100GB.

[0071] Third, perform current monitoring and integral calculation: Assume that during the aging test, the current changes with time and can be monitored and recorded in real time by a data logging device.

[0072] Fourth, the current is integrated using the numerical integration method to obtain the total charge in 1000 hours. =500Ah.

[0073] Fifth, capacity measurement after aging: After the aging test is completed, the current capacity of the memory array is measured to be 90GB.

[0074] Sixth, calculate the capacity decay rate Calculate the capacity change: =100GB−90GB=10GB.

[0075] Seventh, substitute the data into the formula to calculate the capacity decay rate: ; Finally, the results are analyzed and evaluated Capacity decay rate: The calculated capacity decay rate is 50%, indicating that after 1000 hours of aging test, the capacity of the memory array has been reduced to half of its initial capacity.

[0076] Step S800: Associating the evaluation result with the priority weight to obtain the degree of aging replacement requirement of the storage unit in the storage.

[0077] It should be noted that when the evaluation results are associated with the priority weights, the priority weights are used as the core consideration factor, and the evaluation results are used as a reference to assist in implementation. In this way, it is possible to accurately determine which storage units in the memory are more urgently in need of replacement due to aging problems, thereby providing a favorable basis for subsequent maintenance and update operations on the memory, and ensuring the stability of the overall performance of the memory as well as the security and reliability of data storage.

[0078] As a preferred embodiment, refer to Figure 4 It can be seen that the present invention also proposes a rapid aging test device for a memory array. It should be noted that the rapid aging test device for a memory array uses a rapid aging test method for a memory array and includes: A current capture module, used to capture the instantaneous current waveform of each memory cell in the memory array during read and write operations; A feature extraction module, connected to the current capture module, for extracting current features from the captured instantaneous current waveform; A difference matrix construction module, connected to the feature extraction module, is used to construct a difference matrix according to the extracted current features and dynamically mark the storage cells exceeding the threshold; An aging trajectory model building module is connected to the difference matrix building module and is used to take the instantaneous current waveform of the storage unit with different labels under the time series as input and the current characteristics as output to build an aging trajectory model, so as to obtain the aging rate; A priority weight assignment module, connected to the aging trajectory model construction module, is used to assign priority weights to the marked storage units according to the aging rate; A storage capacity acquisition module, connected to the priority weight allocation module, is used to acquire the storage capacity of the storage unit under different priority weights; A pressure gradient applying module, connected to the storage capacity acquisition module, is used to apply a pressure gradient proportional to the storage capacity according to the current characteristic ratio; The capacity attenuation assessment module is connected to the pressure gradient application module and is used to assess the capacity attenuation of the storage unit based on the degree of change of the pressure gradient in a single storage unit in a time series, and associate the assessment result with the priority weight to obtain the degree of aging replacement requirement of the storage unit in the memory.

[0079] It should be noted that, in actual use, a fast aging test device for a memory array first captures the instantaneous current waveform of each memory cell in the memory array through a current capture module, and the feature extraction module extracts key current features from these waveforms. Then, the difference matrix construction module uses these features to construct a difference matrix and marks those memory cells whose current features exceed a preset threshold. These cells may be in a state of accelerated aging. The aging trajectory model construction module is then connected and uses the instantaneous current waveform under the time series as input and the current features as output to construct an aging trajectory model, thereby calculating the aging rate of the memory cell. With the information of the aging rate, the optimal The priority weight assignment module can assign priority weights to the marked storage cells based on this information. Then the storage capacity acquisition module will measure the storage capacity of the storage cells under different priority weights to provide basic data for further testing. In addition, the pressure gradient application module will apply a pressure gradient proportional to the current characteristic ratio to the storage capacity based on the current characteristic ratio to simulate the pressure environment of the storage cell in actual use. Finally, the capacity decay assessment module will evaluate the capacity decay of the storage cell based on the degree of change of the pressure gradient in a single storage cell within the time series, and associate this assessment result with the previous priority weight, thereby deriving the degree of aging replacement needs of the storage cells in the memory.

[0080] Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions and variations may be made to the embodiments without departing from the principles and spirit of the present invention, and that the scope of the present invention is limited by the attached embodiments and their equivalents.

Claims

1. A rapid aging test method for a memory array, characterized in that: include: During the read and write operations, the instantaneous current waveform of each memory cell in the memory array is captured and the current characteristics are extracted therefrom; A difference matrix is ​​constructed using the extracted current features to dynamically mark the memory cells that exceed the threshold; An aging trajectory model is constructed, which takes the instantaneous current waveform of storage cells with different labels in time series as input and the current characteristics as output, so as to obtain the aging rate. The aging trajectory model is used to judge the aging degree of storage cells through the waveform of instantaneous current, so as to predict the subsequent failure points of the storage array in advance. Assigning priority weights to marked storage units according to aging rates; Obtain storage capacity of storage units under different priority weights; Applying a pressure gradient proportional to the storage capacity according to the characteristic ratio of the current; Evaluate the capacity decay of a storage unit based on the degree of change of the pressure gradient within a single storage unit in the time series; The evaluation results are associated with priority weights to obtain the degree of aging replacement needs of storage units within the storage.

2. A rapid aging test method for a memory array according to claim 1, characterized in that: The current characteristics include: an absolute deviation value of the current peak value and an integrated charge amount; The current feature extraction method includes: obtaining arrangement characteristics of memory cells in a memory array; Based on the arrangement characteristics, a high-frequency sampling circuit is connected to each storage unit; According to the read and write operation frequency of the storage array, an adjustable resistor is added in series in the high-frequency sampling circuit, and the adjustable resistor is used to adjust the sampling frequency to keep synchronization with the read and write operation frequency; The high frequency sampling circuit obtains the absolute deviation value and the integrated charge amount of the current peak value of the integrated storage unit according to the extraction algorithm.

3. A rapid aging test method for a memory array according to claim 2, characterized in that: The number of the extraction algorithms matches the number of current feature types, and includes an absolute deviation value extraction algorithm and an integrated charge quantity extraction algorithm; The absolute deviation value extraction algorithm is: ,in is the current peak value, and the current waveform is sampled using a high-frequency sampling circuit during the time period (t1, t2). Sampling is performed to obtain a series of discrete points The value of k ranges from 1 to M, where M is the number of sampling points. is the absolute deviation of the current peak value, the current peak value For the The maximum value within the sampling period, that is, , is the average value of the current peak value, which is obtained by averaging the current peak values ​​in multiple sampling cycles, and n is the maximum value collected, that is, ; The integrated charge extraction algorithm is: ,in and are the start time and end time of the read and write operations respectively. is the sampling interval, For the The integrated charge of Indicates at a point in time K represents the number of sampling points, that is, how many times the current value is measured.

4. A rapid aging test method for a memory array according to claim 2, characterized in that: The threshold value set based on the absolute deviation value of the current peak is 1.5 to 2 times the average value of the absolute deviation value of the current peak, and the threshold value set based on the integrated charge is 1.2 to 1.8 times the average value of the integrated charge. When the current characteristic of the storage cell exceeds any of the above thresholds, it is marked as an abnormal storage cell; The difference matrix is ​​constructed by taking each storage unit as a row of the matrix and the current characteristic as a column of the matrix, and filling the current characteristic value of each storage unit into the corresponding row and column position to form a difference matrix.

5. The rapid aging test method for a memory array according to claim 1, characterized in that: The construction method of the aging trajectory model includes: Segmentally sampling the historical current waveform in the marked storage unit; Extract the time series data set based on the segmented sampling results; Extract instantaneous current characteristic values ​​based on the time series data set; According to the material properties of the storage array, matching material degradation factor values ​​and aging rate coefficients are retrieved from the Internet; A functional correlation formula between the instantaneous current characteristic value in time series and the material degradation factor value and aging rate coefficient is established.

6. A rapid aging test method for a memory array according to claim 5, characterized in that: The function association formula is ; in is the cumulative degradation within time t, indicating the degree of storage unit performance degradation. is the material degradation factor value, and are the aging rate coefficients, is the peak current in the i-th time period, used to represent the instantaneous current characteristic value, is the current change rate in the i-th time period, Used to indicate time segment intervals.

7. A rapid aging test method for a memory array according to claim 1, characterized in that: The pressure gradient acting on the storage capacity is used to represent the total amount of data information that the storage unit can store; The method for evaluating the attenuation of the storage unit content includes: Obtain the difference in the total amount of data information before and after the instantaneous current waveform; A capacity attenuation evaluation formula is constructed based on the difference in the total amount of data information, the storage capacity, and the current characteristics of the instantaneous current waveform; The capacity decay rate of the storage unit is obtained according to the capacity decay evaluation formula. The capacity decay rate is used to quantify the performance degradation of the storage unit in a unit time period. The higher the capacity decay rate, the more serious the aging of the storage unit.

8. A rapid aging test method for a memory array according to claim 7, characterized in that: The capacity fade evaluation formula is: ; in Used to indicate the relative degree of data loss of a storage unit during aging testing. It is used to express the contribution of quantitative current to aging. The larger the current or the longer the action time, the more significant the accelerated aging effect. It is used to indicate the difference in the total amount of data information before and after the instantaneous current waveform. The charge integral of the instantaneous current waveform during the test period, is the maximum storage capacity of the storage unit, Used to indicate capacity decay rate.

9. A rapid aging test device for a memory array, using the rapid aging test method for a memory array according to any one of claims 1 to 8, characterized in that: include: A current capture module, used to capture the instantaneous current waveform of each memory cell in the memory array during read and write operations; A feature extraction module, connected to the current capture module, for extracting current features from the captured instantaneous current waveform; A difference matrix construction module, connected to the feature extraction module, is used to construct a difference matrix according to the extracted current features and dynamically mark the storage cells exceeding the threshold; An aging trajectory model building module is connected to the difference matrix building module and is used to take the instantaneous current waveform of the storage unit with different labels under the time series as input and the current characteristics as output to build an aging trajectory model, so as to obtain the aging rate; A priority weight assignment module, connected to the aging trajectory model construction module, is used to assign priority weights to the marked storage units according to the aging rate; A storage capacity acquisition module, connected to the priority weight allocation module, is used to acquire the storage capacity of the storage unit under different priority weights; A pressure gradient applying module, connected to the storage capacity acquisition module, is used to apply a pressure gradient proportional to the storage capacity according to the current characteristic ratio; The capacity attenuation assessment module is connected to the pressure gradient application module and is used to assess the capacity attenuation of the storage unit based on the degree of change of the pressure gradient in a single storage unit in a time series, and associate the assessment result with the priority weight to obtain the degree of aging replacement requirement of the storage unit in the memory.

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