ESD protection circuits, integrated circuits and integrated modules
By designing the ESD protection circuit in the IC, using the substrate power supply module and the electrostatic protection module, the problems of IC port voltage backflow and electrostatic voltage protection are solved, and the life and reliability of the IC are improved.
Patent Information
- Application Number
- CN202510038784.5
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-01-09
- Publication Date
- 2025-04-04
AI Technical Summary
The input and output port voltage of the IC is easily backflowed into the power supply network, resulting in IC damage, and the switch tube has a low protection ability to static voltage.
An ESD protection circuit is designed, including a substrate power supply module and an electrostatic protection module. The substrate power supply module provides power to the substrate of the switch tube separately to prevent the port voltage from pouring back; the electrostatic protection module releases the electrostatic voltage inside the switch tube through grounding.
Effectively prevent port voltage backflow from damage to the IC power supply network and switch tube, and avoid static voltage from damage to the internal switching tube, thereby improving the life and reliability of the grain.
Smart Images

Figure CN119767795A_ABST
Abstract
Description
Technical Field
[0001] The present application relates to the field of chip technology, and in particular to an ESD protection circuit, an integrated circuit and an integrated module. Background Art
[0002] At present, the substrate voltage of the switch tube in the IC (integrated circuit) grain is provided by the power supply network in the IC circuit system. Therefore, when the port voltage of the input and output port (PAD for short) of the IC is higher than the voltage provided by the power supply network, the port voltage is easily backflowed to the power supply network through the switch tube, thereby causing damage to the IC, and the switch tube in the IC has a low ability to protect the electrostatic voltage of the input and output ports. Summary of the invention
[0003] In view of this, the present application provides an ESD protection circuit, an integrated circuit and an integrated module, which are used to prevent the port voltage from flowing back and damaging the power supply network and switch tube of the integrated circuit, and to prevent the electrostatic voltage of the input and output ports from damaging the inside of the switch tube. The technical solution of the present application is as follows: In a first aspect, the present application provides an ESD protection circuit for protecting a grain having a switching tube, wherein the gate and source of the switching tube are used to receive a power supply voltage of the grain, and the drain of the switching tube is connected to an input / output port of the grain; the ESD protection circuit comprises: a substrate power supply module connected to the substrate of the switching tube and a control unit of the grain, for receiving the power supply voltage and a control signal of the control unit, converting the power supply voltage into a substrate voltage according to the control signal and transmitting the voltage to the substrate; and an electrostatic protection module connected to the drain and substrate of the switching tube and grounded, for releasing the electrostatic voltage inside the switching tube to ground.
[0004] In an embodiment of the present application, the substrate voltage is greater than or equal to the power supply voltage.
[0005] In one embodiment of the present application, the substrate power supply module includes a first diode, a second diode, a first capacitor and a second capacitor; the positive electrode of the first diode is used to receive the power supply voltage, and the negative electrode of the first diode is connected to the first end of the first capacitor and the positive electrode of the second diode; the negative electrode of the second diode is connected to the substrate; the second end of the first capacitor is connected to the control unit; the first end of the second capacitor is connected to the negative electrode of the second diode, and the second end of the second capacitor is grounded.
[0006] In an embodiment of the present application, the control signal includes a pulse width modulation signal, so as to adjust the magnitude of the substrate voltage by adjusting the duty cycle of the pulse width modulation signal.
[0007] In one embodiment of the present application, the electrostatic protection module includes a negative voltage release unit and a positive voltage release unit; the negative voltage release unit is connected to the drain of the switch tube and grounded, and is used to release the electrostatic negative voltage inside the switch tube to the ground; the positive voltage release unit is connected to the substrate of the switch tube and grounded, and is used to release the electrostatic positive voltage of the substrate to the ground.
[0008] In an embodiment of the present application, the negative voltage release unit includes a third diode, a cathode of the third diode is connected to the drain of the switch tube and the input / output port, and an anode of the third diode is grounded.
[0009] In an embodiment of the present application, the positive voltage release unit includes a TVS diode, a first end of the TVS diode is connected to the substrate, and a second end of the TVS diode is grounded.
[0010] A second aspect of the present application provides an integrated circuit, including a die and the ESD protection circuit.
[0011] According to a third aspect of the present application, there is provided an integrated module, comprising a die, a negative voltage release unit, a first peripheral port and a second peripheral port; the die comprises a switch tube and a control unit, the gate and source of the switch tube are used to receive the power supply voltage of the die, and the drain of the switch tube is connected to the input and output ports of the die; the negative voltage release unit is connected to the drain of the switch tube and grounded, and is used to release the electrostatic negative voltage inside the switch tube to the ground; the die and the negative voltage release unit are packaged into an integrated circuit; the first peripheral port and the second peripheral port are connected to the substrate of the switch tube of the die; the first peripheral port is used to connect to a positive voltage release unit outside the integrated circuit, and the positive voltage release unit is used to release the electrostatic positive voltage of the substrate to the ground; the second peripheral port is used to connect to a substrate power supply module outside the integrated circuit, and the substrate power supply module is used to receive the external power supply voltage and the control signal of the control unit, and convert the power supply voltage into a substrate voltage according to the control signal and transmit it to the substrate.
[0012] In a fourth aspect, the present application provides an integrated module, comprising a crystal grain, a negative voltage release unit, a substrate power supply module and a third peripheral port; the crystal grain comprises a switch tube and a control unit, the gate and source of the switch tube are used to receive the power supply voltage of the crystal grain, and the drain of the switch tube is connected to the input and output ports of the crystal grain; the negative voltage release unit is connected to the drain of the switch tube and grounded, and is used to release the electrostatic negative voltage inside the switch tube to the ground; the substrate power supply module is connected to the substrate of the switch tube and the control unit of the crystal grain, and is used to receive the power supply voltage and the control signal of the control unit, and convert the power supply voltage into a substrate voltage according to the control signal and transmit it to the substrate; the crystal grain, the negative voltage release unit and the substrate power supply module are packaged into an integrated circuit; the third peripheral port is connected to the substrate of the switch tube of the crystal grain; the third peripheral port is used to connect to a positive voltage release unit outside the integrated circuit, and the positive voltage release unit is used to release the electrostatic positive voltage of the substrate to the ground.
[0013] It can be understood that the ESD protection circuit of the embodiment of the present application, by setting a substrate power supply module, separately supplies power to the substrate of the switching tube in the grain, thereby preventing other power supply voltages in the grain from the port voltage of the input and output ports from flowing back into the power supply voltage terminal, and by setting an electrostatic protection module, releasing the electrostatic voltage inside the switching tube to the ground, thereby avoiding the electrostatic voltage of the input and output ports from damaging the inside of the switching tube, thereby improving the life and reliability of the grain. BRIEF DESCRIPTION OF THE DRAWINGS
[0014] Figure 1 It is a schematic block diagram of an ESD protection circuit for a switch tube provided in an embodiment of the present application.
[0015] Figure 2 This is a circuit diagram of a substrate power supply module provided in an embodiment of the present application.
[0016] Figure 3 It is a schematic block diagram of an electrostatic protection module provided in an embodiment of the present application.
[0017] Figure 4 It is a circuit diagram of an electrostatic protection module provided in an embodiment of the present application.
[0018] Figure 5 It is a schematic block diagram of an integrated circuit provided in an embodiment of the present application.
[0019] Figure 6 It is a schematic block diagram of a second integrated circuit provided in an embodiment of the present application.
[0020] Figure 7 It is a schematic block diagram of a third integrated circuit provided in an embodiment of the present application. DETAILED DESCRIPTION
[0021] It should be noted that in the embodiments of the present application, "at least one" refers to one or more, and "more than one" refers to two or more than two. "And / or" describes the association relationship of associated objects, indicating that three relationships may exist. For example, A and / or B can represent: the existence of A alone, the existence of A and B at the same time, and the existence of B alone, where A and B can be singular or plural. The terms "first", "second", "third", "fourth", etc. (if any) in the specification, claims and drawings of this application are used to distinguish similar objects, rather than to describe a specific order or sequence.
[0022] It should also be noted that the method disclosed in the embodiments of the present application or the method shown in the flowchart includes one or more steps for implementing the method. Without departing from the scope of the claims, the execution order of multiple steps can be interchangeable with each other, and some of the steps can also be deleted.
[0023] At present, the substrate voltage of the switch tube in the IC's die is provided by the power supply network in the IC circuit system. Therefore, when the port voltage of the IC's input and output port (PAD for short) is higher than the voltage provided by the power supply network, the port voltage is easily backflowed to the power supply network through the switch tube, thereby causing damage to the IC. In addition, the switch tube in the IC has a low ability to protect the input and output ports from electrostatic voltage.
[0024] The present application provides an ESD protection circuit (ESD, Electro-Static discharge), integrated circuit and integrated module, which are used to prevent the port voltage from backflowing and damaging the power supply network and switch tube of the integrated circuit, and to avoid the electrostatic voltage of the input and output ports from damaging the inside of the switch tube.
[0025] Please refer to Figure 1 , Figure 1 A schematic block diagram of an ESD protection circuit of a switch tube provided in an embodiment of the present application, wherein the switch tube 201 is arranged in the die 200, the gate and source of the switch tube 201 are used to receive the power supply voltage VCC of the die 200, and the drain of the switch tube 201 is connected to the input / output port PAD of the die 200.
[0026] In the embodiment of the present application, the chip 200 can be packaged into an integrated circuit. Integrated circuits are widely used in various electronic devices, such as computers, mobile phones, and tablet computers. Integrated circuits include analog integrated circuits, digital integrated circuits, and mixed analog and digital integrated circuits.
[0027] In the embodiment of the present application, the switch tube 201 includes a P-type MOS tube, the gate and source of the P-type MOS tube are used to receive the power supply voltage VCC of the die 200, and the drain of the P-type MOS tube is connected to the input / output port PAD of the die 200. The input / output port PAD is used to connect to other components of the electronic device.
[0028] In the embodiment of the present application, the ESD protection circuit 100 includes a substrate power supply module 110 and an electrostatic protection module 120. The substrate power supply module 110 is connected to the substrate of the switch tube 201 and the control unit of the die 200, and is used to receive the power supply voltage VCC and the control signal of the control unit, and convert the power supply voltage VCC into a substrate voltage according to the control signal and transmit it to the substrate.
[0029] It can be understood that by setting the substrate power supply module 110, the substrate of the switch tube 201 in the grain 200 is no longer connected to the power supply voltage network of the grain 200, but the substrate power supply module 110 alone supplies power to the substrate of the switch tube 201 in the grain 200, and the size of the substrate voltage is controlled by the control unit of the grain 200. The control unit can control the substrate voltage to be greater than other power supply voltages in the grain 200, thereby preventing other power supply voltages in the grain 200 from flowing back from the port voltage of the input / output port PAD into the substrate of the switch tube 201, thereby preventing the port voltage from flowing back into the power supply voltage VCC terminal, thereby avoiding damage to the power supply network of the grain 200 and the switch tube 201.
[0030] In some embodiments, the substrate power supply module 110 includes a voltage pump circuit, which receives the power supply voltage VCC of the die 200 and the control signal of the control unit, converts the power supply voltage VCC into a substrate voltage with a higher voltage value according to the control signal, and transmits it to the substrate of the switch tube 201.
[0031] The electrostatic protection module 120 is connected to the drain and substrate of the switch tube 201 and is grounded, and is used to release the electrostatic voltage inside the switch tube 201 to the ground.
[0032] In the embodiment of the present application, since the drain of the switch tube 201 is connected to the input / output port PAD of the die 200, the electrostatic voltage of the input / output port PAD will enter the inside of the switch tube 201 from the drain thereof, wherein the electrostatic voltage includes negative voltage and positive voltage, and the positive voltage will flow to the substrate through the parasitic diode of the switch tube 201. By connecting the electrostatic protection module 120 to the drain of the switch tube 201, the negative voltage of static electricity can be released from the drain of the switch tube 201 to the ground, and by connecting the electrostatic protection module 120 to the substrate of the switch tube 201, the positive voltage of static electricity can be released from the substrate of the switch tube 201 to the ground, and finally the electrostatic voltage inside the switch tube 201 is completely released to the ground.
[0033] It can be understood that the ESD protection circuit 100 of the embodiment of the present application, by setting up a substrate power supply module 110, independently supplies power to the substrate of the switch tube 201 in the chip 200, thereby preventing other power supply voltages in the chip 200 from being backflowed into the power supply voltage VCC terminal from the port voltage of the input-output port PAD, and by setting up an electrostatic protection module 120, the electrostatic voltage inside the switch tube 201 is released to the ground, thereby avoiding the electrostatic voltage of the input-output port PAD from damaging the inside of the switch tube 201, thereby improving the life and reliability of the chip 200.
[0034] In some embodiments, the substrate voltage is greater than or equal to the power supply voltage VCC of the die 200. It can be understood that since the gate and source of the switch tube 201 are used to receive the power supply voltage VCC of the die 200, when the power supply voltage VCC is unstable and decreases, if the power supply voltage VCC is less than the port voltage of the input / output port PAD, the port voltage will flow to the substrate through the parasitic diode of the switch tube 201. At this time, since the substrate voltage is greater than or equal to the power supply voltage VCC of the die 200, the parasitic diode of the switch tube 201 between the substrate power supply module 110 and the power supply voltage VCC is reverse biased, thereby forming a partition between the substrate power supply module 110 and the power supply voltage VCC, thereby preventing the port voltage of the input / output port PAD from flowing to the power supply voltage VCC end, and preventing the port voltage from flowing back to the power supply voltage VCC end.
[0035] Please refer to Figure 2 , Figure 2 A circuit diagram of a substrate power supply module 110 provided in an embodiment of the present application, wherein the substrate power supply module 110 includes a first diode D1, a second diode D2, a first capacitor C1 and a second capacitor C2.
[0036] The anode of the first diode D1 is used to receive the power supply voltage VCC, and the cathode of the first diode D1 is connected to the first end of the first capacitor C1 and the anode of the second diode D2. The cathode of the second diode D2 is connected to the substrate. The second end of the first capacitor C1 is connected to the control unit. The first end of the second capacitor C2 is connected to the cathode of the second diode D2, and the second end of the second capacitor C2 is grounded.
[0037] In an embodiment of the present application, the control signal of the above-mentioned control unit includes a pulse width modulation signal. The control unit can adjust the size of the substrate voltage by adjusting the duty cycle of the pulse width modulation signal. For example, by controlling the duty cycle of the pulse width modulation signal, the substrate voltage is made greater than the power supply voltage VCC, thereby preventing the port voltage from flowing back from the switch tube 201 into the power supply voltage VCC terminal, thereby avoiding damage to the switch tube 201 and the power supply circuit in the grain 200.
[0038] Please refer to Figure 3 , Figure 3 The schematic block diagram of an electrostatic protection module provided in an embodiment of the present application is shown in FIG.
[0039] In the embodiment of the present application, the negative voltage release unit 121 is connected to the drain of the switch tube 201 and grounded, and is used to release the electrostatic negative voltage inside the switch tube 201 to the ground.
[0040] The positive voltage release unit 122 is connected to the substrate of the switch tube 201 and is grounded, and is used to release the electrostatic positive voltage of the substrate to the ground.
[0041] Please refer to Figure 4 , Figure 4 The circuit diagram of an electrostatic protection module 120 provided in an embodiment of the present application is shown in FIG.
[0042] The negative voltage release unit 121 includes a third diode D3 , a cathode of the third diode D3 is connected to the drain of the switch tube 201 and the input / output port PAD, and an anode of the third diode D3 is grounded.
[0043] It can be understood that if the electrostatic voltage of the input / output port PAD is a negative voltage, the negative voltage is released to the ground through the third diode D3 , thereby preventing the negative voltage from damaging the switch tube 201 .
[0044] The positive voltage release unit 122 includes a TVS diode D4 , a first end of the TVS diode D4 is connected to the substrate, and a second end of the TVS diode D4 is grounded.
[0045] It can be understood that if the electrostatic voltage of the input / output port PAD is a positive voltage, the positive voltage flows to the substrate through the parasitic diode of the switch tube 201 , and then flows to the TVS diode D4 through the substrate to release to the ground, thereby preventing the positive voltage from damaging the switch tube 201 .
[0046] Among them, the turn-on voltage specification of the TVS diode D4 is greater than the substrate voltage output when the substrate power supply module 110 is working normally, and the clamping voltage after the TVS diode D4 is turned on is greater than the power supply voltage VCC in the chip 200, so that the parasitic diode of the switch tube 201 will not be forward biased, thereby avoiding the body effect risk of the switch tube 201.
[0047] In some embodiments, the TVS diode D4 is disposed outside the integrated circuit and can be replaced after being damaged by a positive voltage. In addition, by regularly checking the TVS diodes D4 corresponding to each switch tube 201 in the die 200, the corresponding input and output port PAD with positive voltage static electricity can be found to facilitate subsequent improvements.
[0048] Please refer to Figure 5 , Figure 5 This is a schematic block diagram of an integrated circuit provided in an embodiment of the present application, wherein the integrated circuit 10A includes a die 200 and the ESD protection circuit 100 of any of the above embodiments, that is, the die 200 and the ESD protection circuit 100 can be integrated into one chip.
[0049] It can be understood that the beneficial effects of the integrated circuit 10A in the embodiment of the present application can refer to the beneficial effects of the ESD protection circuit 100 in the aforementioned embodiment, which will not be repeated here.
[0050] Please refer to Figure 6 , Figure 6 It is a schematic block diagram of a second integrated circuit 10B provided in an embodiment of the present application, wherein the integrated circuit 10B includes a die 200 , a negative voltage release unit 121 , a first peripheral port 11 and a second peripheral port 12 .
[0051] In the embodiment of the present application, the die 200 includes a switch tube and a control unit, the gate and source of the switch tube are used to receive the power supply voltage VCC of the die 200, and the drain of the switch tube is connected to the input and output port PAD of the die 200. The negative voltage release unit 121 is connected to the drain of the switch tube and grounded, and is used to release the static negative voltage inside the switch tube to the ground. That is, the die 200 and the negative voltage release unit 121 are packaged into an integrated circuit 10B.
[0052] Among them, the first peripheral port 11 and the second peripheral port 12 are connected to the substrate of the switch tube of the die 200. The first peripheral port 11 is used to connect the positive voltage release unit 122 outside the integrated circuit 10B, and the positive voltage release unit 122 is used to release the electrostatic positive voltage of the substrate to the ground. The second peripheral port 12 is used to connect the substrate power supply module 110 outside the integrated circuit 10B, and the substrate power supply module 110 is used to receive the power supply voltage VCC of the integrated circuit 10B and the control signal of the control unit, and convert the power supply voltage VCC into the substrate voltage according to the control signal and transmit it to the substrate. The integrated circuit 10B, the positive voltage release unit 122 and the substrate power supply module 110 constitute an integrated module.
[0053] It can be understood that the integrated circuit 10B in the embodiment of the present application integrates the crystal grain 200 and the negative voltage release unit 121 internally, and the first peripheral port 11 and the second peripheral port 12 are provided for connecting the external positive voltage release unit 122 and the substrate power supply module 110, so that the layout area of the integrated circuit 10B can be effectively reduced, and the positive voltage release unit 122 and the substrate power supply module 110 can be easily replaced through the first peripheral port 11 and the second peripheral port 12, especially the positive voltage release unit 122 can be replaced and checked, and the corresponding input and output port PAD with positive voltage static electricity can be detected to facilitate later improvement.
[0054] In some embodiments, the positive voltage release unit 122 outside the integrated circuit 10B and the substrate power supply module 110 can be integrated into an auxiliary circuit board, or the positive voltage release unit 122 is separately a first auxiliary circuit board, and the substrate power supply module 110 is separately integrated into a second auxiliary circuit board, which is not limited here.
[0055] Please refer to Figure 7 , Figure 7 It is a schematic block diagram of a third integrated circuit 10C provided in an embodiment of the present application, wherein the integrated circuit 10C includes a die 200 , a negative voltage release unit 121 , a substrate power supply module 110 and a third peripheral port 13 .
[0056] In the embodiment of the present application, the die 200 includes a switch tube and a control unit. The gate and source of the switch tube are used to receive the power supply voltage VCC of the die 200 , and the drain of the switch tube is connected to the input / output port PAD of the die 200 .
[0057] The negative voltage release unit 121 is connected to the drain of the switch tube and grounded, and is used to release the static negative voltage inside the switch tube to the ground. The substrate power supply module 110 is connected to the substrate of the switch tube and the control unit of the die 200, and is used to receive the power supply voltage VCC and the control signal of the control unit, and convert the power supply voltage VCC into a substrate voltage according to the control signal and transmit it to the substrate.
[0058] Among them, the third peripheral port 13 is connected to the substrate of the switch tube of the die 200. The third peripheral port 13 is used to connect the positive voltage release unit 122 outside the integrated circuit 10C, and the positive voltage release unit 122 is used to release the static positive voltage of the substrate to the ground. That is, the die 200, the negative voltage release unit 121 and the substrate power supply module 110 are packaged into an integrated circuit 10C. The integrated circuit 10C and the positive voltage release unit 122 constitute an integrated module.
[0059] It can be understood that the integrated circuit 10C of the embodiment of the present application integrates the die 200, the negative voltage release unit 121 and the substrate power supply module 110 internally, and by setting the third peripheral port 13 for connecting the external positive voltage release unit 122, the layout area of the integrated circuit 10C can be effectively reduced, and the third peripheral port 13 is used to facilitate replacement and inspection of the positive voltage release unit 122, and to identify the corresponding input and output port PAD with positive voltage static electricity, so as to facilitate subsequent improvement.
[0060] In some embodiments, the positive voltage release unit 122 outside the integrated circuit 10C may be integrated as an auxiliary circuit board.
[0061] The embodiments described above are merely preferred embodiments of the present application and are not intended to limit the scope of the present application. Without departing from the design spirit of the present application, various modifications and improvements made to the technical solutions of the present application by ordinary technicians in this field should fall within the protection scope determined by the claims of the present application.
Claims
1. An ESD protection circuit for protecting a die having a switch tube, characterized in that: The gate and source of the switch tube are used to receive the power supply voltage of the die, and the drain of the switch tube is connected to the input and output ports of the die; The ESD protection circuit comprises: A substrate power supply module, connected to the substrate of the switch tube and the control unit of the die, for receiving the power supply voltage and a control signal of the control unit, converting the power supply voltage into a substrate voltage according to the control signal and transmitting the voltage to the substrate; The electrostatic protection module is connected to the drain and substrate of the switch tube and is grounded, and is used to release the electrostatic voltage inside the switch tube to the ground.
2. The ESD protection circuit according to claim 1, characterized in that: The substrate voltage is greater than or equal to the power supply voltage.
3. The ESD protection circuit according to claim 1, characterized in that: The substrate power supply module includes a first diode, a second diode, a first capacitor and a second capacitor; The anode of the first diode is used to receive the power supply voltage, the cathode of the first diode is connected to the first end of the first capacitor and the anode of the second diode; the cathode of the second diode is connected to the substrate; the second end of the first capacitor is connected to the control unit; the first end of the second capacitor is connected to the cathode of the second diode, and the second end of the second capacitor is grounded.
4. The ESD protection circuit according to claim 3, characterized in that: The control signal includes a pulse width modulation signal, so as to adjust the magnitude of the substrate voltage by adjusting the duty cycle of the pulse width modulation signal.
5. The ESD protection circuit according to claim 1, wherein: The electrostatic protection module includes a negative voltage release unit and a positive voltage release unit; The negative voltage release unit is connected to the drain of the switch tube and grounded, and is used to release the electrostatic negative voltage inside the switch tube to the ground; The positive voltage release unit is connected to the substrate of the switch tube and is grounded, and is used to release the electrostatic positive voltage of the substrate to the ground.
6. The ESD protection circuit according to claim 5, characterized in that: The negative voltage release unit comprises a third diode, a cathode of the third diode is connected to the drain of the switch tube and the input / output port, and an anode of the third diode is grounded.
7. The ESD protection circuit according to claim 5, characterized in that: The positive voltage release unit includes a TVS diode, a first end of the TVS diode is connected to the substrate, and a second end of the TVS diode is grounded.
8. An integrated circuit, characterized in that: The invention comprises a die and an ESD protection circuit as claimed in any one of claims 1 to 7.
9. An integrated module, characterized in that: The device comprises a crystal grain, a negative voltage release unit, a first peripheral port and a second peripheral port; the crystal grain comprises a switch tube and a control unit, the gate and source of the switch tube are used to receive the power supply voltage of the crystal grain, and the drain of the switch tube is connected to the input and output ports of the crystal grain; The negative voltage release unit is connected to the drain of the switch tube and grounded, and is used to release the electrostatic negative voltage inside the switch tube to the ground; The die and the negative voltage release unit are packaged into an integrated circuit; The first peripheral port and the second peripheral port are connected to the substrate of the switch tube of the die; The first peripheral port is used to connect to a positive voltage release unit outside the integrated circuit, and the positive voltage release unit is used to release the electrostatic positive voltage of the substrate to the ground; The second peripheral port is used to connect to a substrate power supply module outside the integrated circuit, and the substrate power supply module is used to receive the external power supply voltage and the control signal of the control unit, convert the power supply voltage into a substrate voltage according to the control signal, and transmit it to the substrate.
10. An integrated module, characterized in that: It comprises a crystal grain, a negative voltage release unit, a substrate power supply module and a third peripheral port; the crystal grain comprises a switch tube and a control unit, the gate and source of the switch tube are used to receive the power supply voltage of the crystal grain, and the drain of the switch tube is connected to the input and output port of the crystal grain; the negative voltage release unit is connected to the drain of the switch tube and grounded, and is used to release the electrostatic negative voltage inside the switch tube to the ground; The substrate power supply module is connected to the substrate of the switch tube and the control unit of the die, and is used to receive the power supply voltage and the control signal of the control unit, and convert the power supply voltage into a substrate voltage according to the control signal and transmit it to the substrate; The die, the negative voltage release unit and the substrate power supply module are packaged into an integrated circuit; The third peripheral port is connected to the substrate of the switch tube of the die; The third peripheral port is used to connect to a positive voltage release unit outside the integrated circuit, and the positive voltage release unit is used to release the static positive voltage of the substrate to the ground.