High-stability bulk phase passivated perovskite solar cell and preparation method and application thereof

Abstract

The invention discloses a high-stability bulk phase passivation perovskite solar cell and a preparation method and application thereof, and belongs to the field of new energy. The perovskite solar cell comprises a conductive substrate, a hole transport layer, a dielectric layer, a perovskite light absorption layer, an electron transport layer and a top electrode layer which are stacked in sequence, the material of the perovskite light absorption layer comprises (FA < 0.95 > MA < 0.05 >) < 0.95 > Cs < 0.05 > Pb < (I < 0.95 > Br < 0.05 >) < 3 > and guanidine thiocyanate. According to the perovskite solar cell provided by the invention, a bulk phase passivation technology is adopted, and guanidine thiocyanate is used as a passivator, so that defect recombination in a perovskite material can be reduced, collection and migration of charge carriers can be enhanced, and the overall performance of the cell, especially the photoelectric conversion efficiency, can be improved.

Description

Technical Field

[0001] The present invention relates to the field of new energy technology, and in particular to a high-stability bulk passivated perovskite solar cell and a preparation method and application thereof. Background Art

[0002] As an emerging photovoltaic technology, perovskite solar cells have received widespread attention in the energy field in recent years. One of the biggest advantages of this type of cell is its remarkably high photoelectric conversion efficiency and relatively low production cost, which makes it a strong competitor to traditional silicon-based solar cells. Perovskite materials themselves are a class of compounds with a perovskite-type crystal structure, which generally have a wide range of light absorption and can effectively absorb the solar spectrum from ultraviolet to near-infrared. Therefore, perovskite solar cells are able to operate over a wider range of spectra, thereby improving their photoelectric conversion efficiency.

[0003] In addition to high efficiency, the synthesis process of perovskite materials is also very simple and low-cost, which makes them have great commercialization potential. Especially in solution processing, perovskite solar cells show unique advantages. Through methods such as spraying and printing, low-cost and large-area manufacturing can be achieved, which not only saves a lot of materials and energy, but also reduces the complexity of the production process. Therefore, perovskite solar cells are considered to be a photovoltaic technology with broad application prospects, especially in large-scale energy applications and distributed photovoltaic systems.

[0004] However, despite the obvious advantages of perovskite solar cells in terms of efficiency and cost, their widespread application and commercialization are still subject to some challenges, especially their stability. The stability of perovskite materials under harsh environmental conditions remains a key problem, mainly in terms of humidity and high temperature. Perovskite materials are particularly susceptible to degradation in high humidity environments. Moisture reacts with the lead in perovskite to produce lead chloride, lead sulfide or other unstable compounds. These reactions not only reduce the photoelectric performance of the material, but also cause a significant decrease in the overall efficiency of the battery. The intrusion of moisture accelerates the decomposition of the perovskite layer, thereby shortening the service life of the battery or even causing the battery to fail completely.

[0005] In addition, under high temperature conditions, the stability of perovskite materials is also a prominent problem. The lattice structure of perovskite materials may be destroyed at high temperatures, causing their electrical conductivity to drop sharply. The thermal expansion or other structural changes of the lattice may cause the material to undergo phase change or generate crystal defects, thereby affecting its battery performance, and in severe cases even causing the battery to fail. Therefore, how to improve the stability of perovskite solar cells in high humidity and high temperature environments has become an important research direction in current scientific research and industrial fields. Summary of the invention

[0006] The present invention aims to solve the problem of low stability of perovskite solar cells prepared in the prior art. The present invention provides a high-stability bulk passivated perovskite solar cell and a preparation method and application thereof.

[0007] In order to achieve the above object, the present invention provides the following technical solutions: The present invention provides a high-stability bulk passivated perovskite solar cell, comprising a conductive substrate, a hole transport layer, a dielectric layer, a perovskite light absorption layer, an electron transport layer and a top electrode layer stacked in sequence; the material of the perovskite light absorption layer comprises (FA 0.95 MA 0.05 ) 0.95 Cs 0.05 Pb(I 0.95 Br 0.05 )3 and guanidine thiocyanate.

[0008] The concentration of the guanidine thiocyanate is 0.3-0.5 mg / mL.

[0009] The material of the hole transport layer is one or more of MeO-2PACz, 2PACz, Me-4PACz or 4PACz.

[0010] The material of the dielectric layer is Al2O3 nanoparticles.

[0011] The material of the electron transport layer includes TiO2, SnO2 or one of fullerene and fullerene derivatives.

[0012] The material of the top electrode layer is one of gold, silver, copper, graphite or amorphous carbon.

[0013] The conductive substrate is made of indium tin oxide. The thickness of the conductive substrate is 200~400nm; the thickness of the hole transport layer is 1~5nm; the thickness of the dielectric layer is 30~60nm; the thickness of the perovskite light absorption layer is 300~700nm; the thickness of the electron transport layer is 10~100nm; and the thickness of the top electrode layer is 50~500nm.

[0014] The present invention also provides a method for preparing a high-stability bulk passivated perovskite solar cell, comprising: Spin coating a solution including hole transport layer material on a conductive substrate, and annealing after spin coating to obtain a hole transport layer; Spin coating a solution including a dielectric layer material on the hole transport layer, and annealing after spin coating to obtain a dielectric layer; Spin coating on dielectric layer includes (FA 0.95 MA 0.05 ) 0.95 Cs 0.05Pb(I 0.95 Br 0.05 )3 and guanidine thiocyanate perovskite precursor solution, perform two-stage spin coating at different rotation speeds, add chlorobenzene to the perovskite precursor solution before the end of spin coating, and anneal after spin coating to obtain a perovskite light absorbing layer; The electron transport material and the top electrode material are sequentially deposited on the perovskite light-absorbing layer by vacuum evaporation to form an electron transport layer and a top electrode layer, respectively, to constitute a bulk passivated perovskite solar cell.

[0015] The present invention also provides a photovoltaic device, comprising the above-mentioned high-stability bulk passivated perovskite solar cell.

[0016] Compared with the prior art, the present invention has the following beneficial effects: The perovskite light-absorbing layer material used in the present invention has excellent light absorption capacity. The stability of perovskite materials is usually affected by crystal structure defects and interface defects, which are the main reasons for the decrease in photoelectric conversion efficiency and the shortening of battery life. In order to further improve the stability of perovskite, guanidine thiocyanate is added to the perovskite precursor solution for bulk passivation. By adding guanidine thiocyanate, the defects in the perovskite crystal and the unstable surface positions can be effectively reduced, thereby improving the photoelectric performance and stability of the material. The high-stability bulk passivation perovskite solar cell of the present invention greatly improves the stability of the battery while improving the photoelectric conversion efficiency through the innovative selection of multiple materials and the reasonable layer structure design. The invention significantly improves the stability of the perovskite solar cell by selecting suitable materials and layer structures, especially by introducing guanidine thiocyanate as a bulk passivator in the perovskite light-absorbing layer. This passivation technology effectively delays the degradation of the perovskite material by reducing defects and improving the interface structure, thereby improving the long-term stability and photoelectric conversion efficiency of the battery.

[0017] Furthermore, limiting the concentration of guanidine thiocyanate can effectively regulate its passivation effect. Too low a concentration may result in an insignificant passivation effect, while too high a concentration may cause excessive passivation or have an adverse effect on the perovskite structure.

[0018] Furthermore, the role of the dielectric layer is to prevent the recombination of electrons and holes and optimize charge separation and transport. Using Al2O3 nanoparticles as dielectric layer materials can effectively improve the electrical isolation of the interface and enhance the stability of perovskite solar cells. Al2O3 materials have strong chemical stability and low electrical conductivity. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] In order to more clearly illustrate the technical solution of the embodiment of the present invention, the following is a brief introduction to the drawings required for use in the present invention: Figure 1 is a schematic diagram of a perovskite solar cell of the present invention; Figure 2 This is a stability comparison chart of the bulk passivated perovskite solar cells prepared in Example 1 and Comparative Example 1.

[0020] In the figure, 1. conductive substrate; 2. hole transport layer; 3. dielectric layer; 4. perovskite light absorption layer; 5. electron transport layer; 6. top electrode layer. DETAILED DESCRIPTION

[0021] The present invention will be further described below in conjunction with the accompanying drawings: In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, rather than all of the embodiments. The components of the embodiments of the present invention described and shown in the drawings here can usually be arranged and designed in various different configurations. Therefore, the following detailed description of the embodiments of the present invention provided in the drawings is not intended to limit the scope of the claimed invention, but merely represents selected embodiments of the present invention. Based on the embodiments in the present invention, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the present invention.

[0022] Bulk passivation refers to improving the performance of perovskite materials by introducing a passivator into the perovskite light-absorbing layer. Perovskite materials themselves have good photoelectric properties, but due to the presence of crystal defects and surface defects, these defects often lead to carrier recombination, thereby reducing the efficiency of solar cells. By performing bulk passivation on perovskite materials, the defects inside the crystal and the surface defects can be effectively reduced, thereby reducing the recombination of carriers and improving the mobility and collection efficiency of carriers.

[0023] like Figure 1 As shown, a high-stability bulk passivated perovskite solar cell provided by the present invention includes a conductive substrate 1, a hole transport layer 2, a dielectric layer 3, a perovskite light absorption layer 4, an electron transport layer 5 and a top electrode layer 6 which are stacked in sequence.

[0024] The material of the hole transport layer is one or more of [2-(3,6-dimethoxy-9H-carbazole-9-yl)ethyl]phosphonic acid (MeO-2PACz), (2-(9H-carbazole-9-yl)ethyl)phosphonic acid (2PACz), (4-(3,6-dimethyl-9H-carbazole-9-yl)butyl)phosphonic acid (Me-4PACz) or [4-(9H-carbazole-9-yl)butyl]phosphonic acid (4PACz). Preferably, the material of the hole transport layer is MeO-2PACz.

[0025] The material of the dielectric layer is Al2O3 nanoparticles.

[0026] The material of the perovskite light absorbing layer includes (FA 0.95 MA 0.05 ) 0.95 Cs 0.05 Pb(I 0.95 Br 0.05 ) 3 and an additive, wherein the additive is guanidine thiocyanate, and the concentration of guanidine thiocyanate is 0.3-0.5 mg / mL. Preferably, the concentration of the guanidine thiocyanate is 0.3-0.4 mg / mL.

[0027] The material of the electron transport layer is titanium dioxide (TiO2), tin oxide (SnO2) or fullerene (C 60 ) and a fullerene derivative. Preferably, the material of the electron transport layer is C 60 .

[0028] The material of the top electrode layer is one of gold, silver, copper, graphite or amorphous carbon. Preferably, the material of the top electrode layer is gold.

[0029] The conductive substrate is transparent conductive glass, and the transparent conductive glass is indium tin oxide (FTO).

[0030] In an embodiment of the present invention, the thickness of the conductive substrate is 200-400nm, preferably 250-350nm; specifically 290nm, 300nm, 310nm, 320nm, etc. The thickness of the hole transport layer is 1-5nm, preferably 1-3nm, and more preferably 1-2nm. The thickness of the dielectric layer is 30-60nm. The thickness of the perovskite light absorption layer is 300-700nm, preferably 300-500nm, and more preferably 400-500nm. The thickness of the electron transport layer is 10-100nm, preferably 20-80nm, more preferably 30-60nm, and most preferably 40-50nm. The thickness of the top electrode is 50-500nm, preferably 100-400nm, and more preferably 100-200nm.

[0031] In the following examples, unless otherwise specified, all materials used can be obtained through common channels; and the test methods adopted are conventional methods in the art.

[0032] Embodiment 1: The method for preparing the perovskite solar cell of this embodiment includes: S1, wash the FTO glass substrate with acetone, isopropanol and deionized water in sequence, blow dry and set aside; S2, spin coating MeO-2PACz solution (solvent is isopropanol, MeO-2PACz solution concentration is 0.6 mg / mL) on FTO glass substrate at 3000 rpm for 30 s, followed by annealing at 100 °C for 10 min to form a hole transport layer; the thickness of the hole transport layer is about 2 nm; S3, spin coating an Al2O3 nanoparticle solution (the solvent is isopropanol, the particle size of the Al2O3 nanoparticles is 30 nm, and the concentration of the Al2O3 nanoparticle solution is 1 mg / mL) on the hole transport layer at a rotation speed of 5000 rpm for 30 seconds, and then annealing in an environment of 100°C for 10 minutes to form a dielectric layer with a thickness of about 40 nm; S4, prepared according to stoichiometric ratio (FA 0.95 MA 0.05 ) 0.95 Cs 0.05 Pb(I 0.95 Br 0.05 )3 and guanidine thiocyanate perovskite precursor solution (FA 0.95 MA 0.05 ) 0.95 Cs 0.05 Pb(I 0.95 Br 0.05 )3 concentration is 1.5mol / L, solvent is DMF:DMSO=4:1, guanidine thiocyanate concentration is 0.3mg / mL), 100 microliters of perovskite precursor solution is spin-coated on the dielectric layer, the first stage spin coating speed is 2000rpm, spin coating 10s, the second stage spin coating speed is 5000, spin coating 40s, 15s before the end of spin coating, 200 microliters of chlorobenzene is quickly added as anti-solvent, and then annealed on a hot stage at 100°C for 30 minutes to form a perovskite light absorbing layer, the thickness of the perovskite light absorbing layer is about 400nm; S5, using vacuum evaporation method to deposit C on the perovskite light absorbing layer 60 , forming an electron transport layer, the thickness of the electron transport layer is about 40nm; S6, depositing gold on the electron transport layer by vacuum evaporation to form a top electrode layer, the thickness of the top electrode layer is about 100 nm; the perovskite solar cell of this embodiment is manufactured through the above steps.

[0033] Embodiment 2: The method for preparing the perovskite solar cell of this embodiment includes: S1, wash the FTO glass substrate with acetone, isopropanol and deionized water in sequence, blow dry and set aside; S2, spin coating Me-4PACz solution (solvent is isopropanol, Me-4PACz solution concentration is 0.6 mg / mL) on FTO glass substrate at 3000 rpm for 30 s, followed by annealing at 100 °C for 10 min to form a hole transport layer; the thickness of the hole transport layer is about 5 nm; S3, spin coating an Al2O3 nanoparticle solution (the solvent is isopropanol, the particle size of the Al2O3 nanoparticles is 30 nm, and the concentration of the Al2O3 nanoparticle solution is 1 mg / mL) on the hole transport layer at a rotation speed of 5000 rpm for 30 seconds, and then annealing in an environment of 100°C for 10 minutes to form a dielectric layer with a thickness of about 40 nm; S4, prepared according to stoichiometric ratio (FA 0.95 MA 0.05 ) 0.95 Cs 0.05 Pb(I 0.95 Br 0.05 )3 and guanidine thiocyanate perovskite precursor solution (FA 0.95 MA 0.05 ) 0.95 Cs 0.05 Pb(I 0.95 Br 0.05 )3 concentration is 1.5mol / L, solvent is DMF:DMSO=4:1, guanidine thiocyanate concentration is 0.4mg / mL), 100 microliters of perovskite precursor solution is spin-coated on the dielectric layer, the first stage spin coating speed is 2000rpm, spin coating 10s, the second stage spin coating speed is 5000, spin coating 40s, 15s before the end of spin coating, 200 microliters of chlorobenzene is quickly added as anti-solvent, and then annealed on a hot stage at 100°C for 30 minutes to form a perovskite light absorbing layer, the thickness of the perovskite light absorbing layer is about 400nm; S5, using vacuum evaporation method to deposit C on the perovskite light absorbing layer 60 , forming an electron transport layer, the thickness of the electron transport layer is about 50nm; S6, depositing gold on the electron transport layer by vacuum evaporation to form a top electrode layer, the thickness of the top electrode layer is about 200 nm; the perovskite solar cell of this embodiment is manufactured through the above steps.

[0034] Embodiment 3: The method for preparing the perovskite solar cell of this embodiment includes: S1, wash the FTO glass substrate with acetone, isopropanol and deionized water in sequence, blow dry and set aside; S2, spin coating MeO-2PACz solution (solvent is isopropanol, MeO-2PACz solution concentration is 0.6 mg / mL) on FTO glass substrate at 3000 rpm for 30 s, followed by annealing at 100 °C for 10 min to form a hole transport layer; the thickness of the hole transport layer is about 3 nm; S3, spin coating an Al2O3 nanoparticle solution (the solvent is isopropanol, the particle size of the Al2O3 nanoparticles is 30 nm, and the concentration of the Al2O3 nanoparticle solution is 1 mg / mL) on the hole transport layer at a rotation speed of 5000 rpm for 30 seconds, and then annealing in an environment of 100°C for 10 minutes to form a dielectric layer with a thickness of about 50 nm; S4, prepared according to stoichiometric ratio (FA 0.95 MA 0.05 ) 0.95 Cs 0.05 Pb(I 0.95 Br 0.05 )3 and guanidine thiocyanate perovskite precursor solution (FA 0.95 MA 0.05 ) 0.95 Cs 0.05 Pb(I 0.95 Br 0.05 )3 concentration is 1.5mol / L, solvent is DMF:DMSO=4:1, guanidine thiocyanate concentration is 0.5mg / mL), 100 microliters of perovskite precursor solution is spin-coated on the dielectric layer, the first stage spin coating speed is 2000rpm, spin coating 10s, the second stage spin coating speed is 5000, spin coating 40s, 15s before the end of spin coating, 200 microliters of chlorobenzene is quickly added as anti-solvent, and then annealed on a hot stage at 100°C for 30 minutes to form a perovskite light absorbing layer, the thickness of the perovskite light absorbing layer is about 400nm; S5, using a vacuum evaporation method to deposit SnO2 on the perovskite light-absorbing layer to form an electron transport layer, the thickness of the electron transport layer is about 50nm; S6, depositing graphite on the electron transport layer by vacuum evaporation to form a top electrode layer, the thickness of the top electrode layer is about 200 nm; the perovskite solar cell of this embodiment is manufactured through the above steps.

[0035] Embodiment 4: The method for preparing the perovskite solar cell of this embodiment includes: S1, wash the FTO glass substrate with acetone, isopropanol and deionized water in sequence, blow dry and set aside; S2, spin coating Me-4PACz solution (solvent is isopropanol, Me-4PACz solution concentration is 0.6 mg / mL) on FTO glass substrate at 3000 rpm for 30 s, followed by annealing at 100 °C for 10 min to form a hole transport layer; the thickness of the hole transport layer is about 2 nm; S3, spin coating an Al2O3 nanoparticle solution (the solvent is isopropanol, the particle size of the Al2O3 nanoparticles is 30 nm, and the concentration of the Al2O3 nanoparticle solution is 1 mg / mL) on the hole transport layer at a rotation speed of 5000 rpm for 30 seconds, and then annealing in an environment of 100°C for 10 minutes to form a dielectric layer with a thickness of about 60 nm; S4, prepared according to stoichiometric ratio (FA 0.95 MA 0.05 ) 0.95 Cs 0.05 Pb(I 0.95 Br 0.05 )3 and guanidine thiocyanate perovskite precursor solution (FA 0.95 MA 0.05 ) 0.95 Cs 0.05 Pb(I 0.95 Br 0.05 )3 concentration is 1.5mol / L, solvent is DMF:DMSO=4:1, guanidine thiocyanate concentration is 0.3mg / mL), 100 microliters of perovskite precursor solution is spin-coated on the dielectric layer, the first stage spin coating speed is 2000rpm, spin coating 10s, the second stage spin coating speed is 5000, spin coating 40s, 15s before the end of spin coating, 200 microliters of chlorobenzene is quickly added as anti-solvent, and then annealed on a hot stage at 100°C for 30 minutes to form a perovskite light absorbing layer, the thickness of the perovskite light absorbing layer is about 400nm; S5, depositing TiO2 on the perovskite light-absorbing layer by vacuum evaporation to form an electron transport layer, the thickness of the electron transport layer is about 30 nm; S6, depositing graphite on the electron transport layer by vacuum evaporation to form a top electrode layer, the thickness of the top electrode layer is about 300 nm; the perovskite solar cell of this embodiment is manufactured through the above steps.

[0036] Comparative Example 1: The preparation method of the perovskite solar cell of this comparative example comprises: S1, wash the FTO glass substrate with acetone, isopropanol and deionized water in sequence, blow dry and set aside; S2, spin coating MeO-2PACz solution (solvent is isopropanol, MeO-2PACz solution concentration is 0.6 mg / mL) on FTO glass substrate at 3000 rpm for 30 s, followed by annealing at 100 °C for 10 min to form a hole transport layer; the thickness of the hole transport layer is about 30 nm; S3, spin coating an Al2O3 nanoparticle solution (the solvent is isopropanol, the particle size of the Al2O3 nanoparticles is 30 nm, and the concentration of the Al2O3 nanoparticle solution is 1 mg / mL) on the hole transport layer at a rotation speed of 5000 rpm for 30 seconds, and then annealing in an environment of 100°C for 10 minutes to form a dielectric layer with a thickness of about 2 nm; S4, prepared according to stoichiometric ratio (FA 0.95 MA 0.05 ) 0.95 Cs 0.05 Pb(I 0.95 Br 0.05 )3 perovskite precursor solution (FA 0.95 MA 0.05 ) 0.95 Cs 0.05 Pb(I 0.95 Br 0.05 )3 concentration is 1.5mol / L, the solvent is DMF:DMSO=4:1), 100 microliters of perovskite precursor solution is spin-coated on the dielectric layer, the first stage of spin coating speed is 2000rpm, the spin coating is 10s, the second stage of spin coating speed is 5000, the spin coating is 40s, 15s before the end of spin coating, 200 microliters of chlorobenzene is quickly added as an anti-solvent, and then annealed on a hot stage at 100°C for 30 minutes to form a perovskite light absorbing layer, the thickness of the perovskite light absorbing layer is about 400nm; S5, using vacuum evaporation method to deposit C on the perovskite light absorbing layer 60 , forming an electron transport layer, the thickness of the electron transport layer is about 40nm; S6, depositing gold on the electron transport layer by vacuum evaporation to form a top electrode layer, the thickness of the top electrode layer is about 100 nm; the perovskite solar cell of this comparative example is manufactured through the above steps.

[0037] Battery performance test: The performance of the perovskite solar cells prepared in the examples and comparative examples was tested under room temperature using a 3A solar simulator at 100 mW / cm 2 The photoelectric conversion efficiency of the cells prepared in the embodiment and the comparative example was tested under the light intensity of 0.084 cm 2 The test results are shown in Table 1: Table 1

[0038] According to Table 1 and Figure 2 It can be seen that compared with Comparative Example 1, the photoelectric conversion efficiency of the bulk-passivated perovskite solar cell of Example 1 is improved, and the stability is obviously better than that of the perovskite solar cell of Comparative Example 1 which is not bulk-passivated.

[0039] The endpoints and any values ​​of the scope disclosed in the present invention are not limited to the precise scope or value, and these scopes or values ​​should be understood to include values ​​close to these scopes or values. For numerical ranges, the endpoint values ​​of each scope, the endpoint values ​​of each scope and the individual point values, and the individual point values ​​can be combined with each other to obtain one or more new numerical ranges, which should be regarded as specifically disclosed in this article. Hereinafter, in principle, each technical solution can be combined with each other to obtain a new technical solution, which should also be regarded as specifically disclosed in this article.

[0040] The above embodiments are only used to illustrate the technical solutions of the present invention rather than to limit the same. Although the present invention has been described in detail with reference to the above embodiments, a person skilled in the art can still modify or make equivalent substitutions to the specific implementations of the present invention. Any modifications or equivalent substitutions that do not depart from the spirit and scope of the present invention are within the scope of protection of the claims of the present invention to be approved.

Claims

1. A high-stability bulk passivated perovskite solar cell, characterized in that: It includes a conductive substrate, a hole transport layer, a dielectric layer, a perovskite light absorption layer, an electron transport layer and a top electrode layer which are stacked in sequence; The material of the perovskite light absorbing layer includes (FA 0.95 MA 0.05 ) 0.95 Cs 0.05 Pb(I 0.95 Br 0.05 )3 and guanidine thiocyanate.

2. A high-stability bulk passivated perovskite solar cell according to claim 1, characterized in that: The concentration of the guanidine thiocyanate is 0.3-0.5 mg / mL.

3. A high-stability bulk passivated perovskite solar cell according to claim 1, characterized in that: The material of the hole transport layer is one or more of MeO-2PACz, 2PACz, Me-4PACz or 4PACz.

4. A high-stability bulk passivated perovskite solar cell according to claim 1, characterized in that: The material of the dielectric layer is Al2O3 nanoparticles.

5. The high-stability bulk passivated perovskite solar cell according to claim 1, characterized in that: The material of the electron transport layer includes TiO2, SnO2 or one of fullerene and fullerene derivatives.

6. A high-stability bulk passivated perovskite solar cell according to claim 1, characterized in that: The material of the top electrode layer is one of gold, silver, copper, graphite or amorphous carbon.

7. A high-stability bulk passivated perovskite solar cell according to claim 1, characterized in that: The conductive substrate is made of indium tin oxide.

8. The high-stability bulk passivated perovskite solar cell according to claim 1, characterized in that: The thickness of the conductive substrate is 200~400nm; the thickness of the hole transport layer is 1~5nm; the thickness of the dielectric layer is 30~60nm; the thickness of the perovskite light absorption layer is 300~700nm; the thickness of the electron transport layer is 10~100nm; and the thickness of the top electrode layer is 50~500nm.

9. A method for preparing a high-stability bulk passivated perovskite solar cell, characterized in that: include: Spin coating a solution including hole transport layer material on a conductive substrate, and annealing after spin coating to obtain a hole transport layer; Spin coating a solution including a dielectric layer material on the hole transport layer, and annealing after spin coating to obtain a dielectric layer; Spin coating on dielectric layer includes (FA 0.95 MA 0.05 ) 0.95 Cs 0.05 Pb(I 0.95 Br 0.05 )3 and guanidine thiocyanate perovskite precursor solution, perform two-stage spin coating at different rotation speeds, add chlorobenzene to the perovskite precursor solution before the end of spin coating, and anneal after spin coating to obtain a perovskite light absorbing layer; The electron transport material and the top electrode material are sequentially deposited on the perovskite light-absorbing layer by vacuum evaporation to form an electron transport layer and a top electrode layer, respectively, to constitute a bulk passivated perovskite solar cell.

10. A photovoltaic device, characterized in that: A high-stability bulk passivated perovskite solar cell comprising the method described in any one of claims 1 to 8.

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