Organic light emitting display device

Abstract

The present invention discloses an organic light-emitting display device, including a substrate, an anode disposed in a pixel region, a pixel definition layer disposed between the anodes, a partition structure disposed on the pixel definition layer, an organic light-emitting layer disposed on the anode, a cathode disposed on the organic light-emitting layer, and a packaging structure including a multi-layer thin film packaging layer disposed on the cathode, wherein the refractive index of the thin film packaging layer increases in sequence along the direction from the substrate to the thin film packaging layer. In the organic light-emitting display device provided by the present invention, light enters the thin film packaging layer with a larger refractive index from the thin film packaging layer with a smaller refractive index, thereby reducing the angle of the light, thereby reducing the amount of light irradiated on the side wall of the partition structure. On the one hand, the reflection of light on the side wall of the partition structure is reduced, the scattering phenomenon is weakened, and the display quality is improved; on the other hand, the absorption of light by the partition structure is reduced, thereby improving the light extraction efficiency and improving the display brightness of the organic light-emitting display device.

Description

Technical Field

[0001] The present invention relates to the field of display technology, and in particular to an organic light emitting display device. Background Art

[0002] An organic light emitting display device is a display device that uses organic light emitting diodes (OLED) as display pixels. Compared with traditional liquid crystal display devices, organic light emitting display devices have many advantages such as self-luminescence, low power consumption, good color effects, and can be used for flexible displays, and are becoming more and more popular in the market.

[0003] Figure 1 is a schematic diagram of a partial cross-sectional structure of an organic light emitting display device in the related art, such as Figure 1 As shown, an array of pixels 20' is provided on one side of the substrate 10'. The pixel 20' includes a stacked anode 11', an organic light-emitting layer 13' and a cathode 14'. When electrons and holes are respectively injected from the cathode 14' and the anode 11' into the organic light-emitting layer 13', the electrons and holes recombine in the organic light-emitting layer 13' to release energy and emit light. The material of the organic light-emitting layer 13' can determine the light-emitting color of the pixel 20'.

[0004] A pixel definition layer 21 ′ is disposed on the upper layer of the anode 11 ′. The pixel definition layer 21 ′ is located between adjacent pixels 20 ′ and is used to divide and define each pixel area.

[0005] The organic light-emitting layer 13' is formed on the upper layer of the pixel definition layer 21', and the organic light-emitting layer 13' includes a first carrier adjustment layer 131', a light-emitting material layer 132' and a second carrier adjustment layer 133' which are stacked in sequence. The first carrier adjustment layer 131' and the second carrier adjustment layer 133' are both arranged as a whole layer, that is, the first carrier adjustment layer 131' and the second carrier adjustment layer 133' are continuous film layers between each pixel 20'.

[0006] The organic light-emitting layer 13' is formed by evaporation through a fine metal mask (FMM), and the fine metal mask has hollow openings matching the pixel size, and the organic material can be accurately deposited in the corresponding pixel area through these hollow openings. In a display device that uses a fine metal mask to evaporate the organic light-emitting layer, organic materials of different colors are respectively evaporated through the fine metal mask to form organic light-emitting layers corresponding to pixels of different colors. Since the fine metal mask itself has manufacturing deviations, alignment deviations and thermal deformation problems, it will cause problems such as large deviations between the film forming position of the organic light-emitting layer and the preset position, and the cost of the fine metal mask is high, resulting in a high manufacturing cost of the display device. Therefore, for a high-resolution micro display device, it is difficult for the fine metal mask to achieve the size of an ultra-small metal hollow opening due to the difficulty of the process. Summary of the invention

[0007] The present invention provides an organic light emitting display device, which solves the problem of abnormal light emission in a pixel area caused by a large step difference between a partition structure and a pixel area.

[0008] According to one aspect of the present invention, there is provided an organic light emitting display device, comprising:

[0009] A substrate, the substrate comprising a plurality of pixel regions arranged at intervals;

[0010] an anode disposed in the pixel region;

[0011] a pixel definition layer disposed between the anodes;

[0012] A partition structure disposed on the pixel definition layer;

[0013] An organic light-emitting layer is disposed on the anode, wherein the organic light-emitting layers of the plurality of pixel regions are separated by the partition structure and are not connected to each other, and the organic light-emitting layers of at least two adjacent pixel regions are organic light-emitting material layers emitting different colors;

[0014] A cathode disposed on the organic light-emitting layer;

[0015] A thin film encapsulation structure disposed on the cathode, the thin film encapsulation structure is at least located in the pixel area, and the thin film encapsulation structure includes a plurality of thin film encapsulation layers;

[0016] Along the direction from the substrate to the thin film encapsulation structure, the refractive index of the multi-layer thin film encapsulation layer increases sequentially.

[0017] The organic light-emitting display device provided by the embodiment of the present invention has a partition structure arranged between adjacent anodes. Furthermore, by arranging a packaging structure including a multi-layer thin film packaging layer in the pixel area, and the refractive index of the multi-layer thin film packaging layer increases successively along the direction of the substrate pointing to the thin film packaging layer, during the propagation of light, the light enters the thin film packaging layer with a larger refractive index from the thin film packaging layer with a smaller refractive index, causing the light to be refracted and reducing the angle of the light, thereby reducing the amount of light irradiated on the side wall of the partition structure. On the one hand, the reflection of the light on the side wall of the partition structure is reduced, the scattering phenomenon is weakened, and the display quality is improved; on the other hand, the absorption of light by the partition structure is reduced, thereby improving the light extraction efficiency and improving the display brightness of the organic light-emitting display device.

[0018] It should be understood that the contents described in this section are not intended to identify the key or important features of the embodiments of the present invention, nor are they intended to limit the scope of the present invention. Other features of the present invention will become easily understood through the following description. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0020] Figure 1 is a schematic diagram of a partial cross-sectional structure of an organic light emitting display device in the related art;

[0021] Figure 2 A schematic structural diagram of an organic light emitting display device provided by an embodiment of the present invention;

[0022] Figure 3 for Figure 2 Schematic diagram of the cross-sectional structure along the A-A' direction;

[0023] Figure 4 A schematic diagram of a partial cross-sectional structure of an organic light emitting display device provided by an embodiment of the present invention;

[0024] Figures 5 to 7 A schematic diagram of a manufacturing method of an organic light emitting display device in the related art;

[0025] Figure 8 It is a schematic diagram of a partial cross-sectional structure of an organic light emitting display device in the related art;

[0026] Fig. 9 A schematic diagram of a partial cross-sectional structure of another organic light emitting display device provided by an embodiment of the present invention;

[0027] Fig.10 A schematic diagram of a partial cross-sectional structure of another organic light emitting display device provided by an embodiment of the present invention;

[0028] Fig.11 is a schematic diagram of a partial cross-sectional structure of another organic light emitting display device in the related art;

[0029] Fig.12 A schematic diagram of a partial cross-sectional structure of another organic light emitting display device provided by an embodiment of the present invention. DETAILED DESCRIPTION

[0030] In order to enable those skilled in the art to better understand the scheme of the present invention, the technical scheme in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work should fall within the scope of protection of the present invention.

[0031] It should be noted that the terms "first", "second", etc. in the specification and claims of the present invention and the above-mentioned drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence. It should be understood that the data used in this way can be interchanged where appropriate, so that the embodiments of the present invention described herein can be implemented in an order other than those illustrated or described herein. In addition, the terms "including" and "having" and any variations thereof are intended to cover non-exclusive inclusions, for example, a process, method, system, product or device that includes a series of steps or units is not necessarily limited to those steps or units that are clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices.

[0032] Figure 2 A schematic diagram of the structure of an organic light emitting display device provided by an embodiment of the present invention is shown in FIG. Figure 3 for Figure 2 The schematic diagram of the cross-sectional structure along the A-A' direction is as follows: Figure 2 and Figure 3 As shown, the organic light emitting display device provided by the embodiment of the present invention includes:

[0033] The substrate 10 includes a plurality of pixel regions 101 that are spaced apart from each other.

[0034] The anodes 11 are disposed in the pixel region 101 , and a pixel definition layer 111 is disposed between the anodes 11 .

[0035] The partition structure 12 is disposed on the pixel definition layer 111 .

[0036] The organic light-emitting layer 13 disposed on the anode 11, the organic light-emitting layers of the plurality of pixel regions 101 are separated and not connected to each other by the partition structure 12. And the organic light-emitting layers 13 of at least two adjacent pixel regions 101 are organic light-emitting material layers emitting different colors, for example, the organic light-emitting layer 13 of the pixel region 101R emits red light, and the organic light-emitting layer 13 of the pixel region 101G emits green light. The organic light-emitting layers 13 of each pixel region 101 are separated and not connected to each other. Specifically, the organic light-emitting layers 13 of different light-emitting colors are formed by maskless evaporation technology, separated and not connected to each other by the partition structure 12.

[0037] The cathode 14 is disposed on the organic light emitting layer 13 .

[0038] The thin film encapsulation structure 15 is disposed on the cathode 14 and is at least located in the pixel region 101 . The thin film encapsulation structure 15 includes multiple thin film encapsulation layers, such as a first thin film encapsulation layer 151 and a second thin film encapsulation layer 152 .

[0039] Along the direction from the substrate 10 to the thin film encapsulation structure 15 , the refractive index of each thin film encapsulation layer increases sequentially.

[0040] Specifically, Figure 2 and Figure 3 As shown, the substrate 10 may be a driving substrate, and a plurality of pixel regions 101 arranged in an array are defined on the substrate 10 .

[0041] Figure 4 A partial cross-sectional structural diagram of an organic light emitting display device provided by an embodiment of the present invention is shown in FIG. Figure 4 As shown, optionally, the substrate 10 includes a substrate 30, on which a driving transistor T corresponding to the pixel area 101 is arranged, and the driving transistor T is connected to the anode 11. The driving transistor T can provide a working signal corresponding to the luminous brightness to the pixel through the anode 11 to drive the pixel to emit light.

[0042] The driving transistor T may include an active region T1 , a gate T2 , and a source-drain electrode layer T3 that are stacked. The active region T1 may be formed in the substrate 30 , but is not limited thereto. The embodiment of the present invention does not specifically limit this.

[0043] refer to Figure 5-Figure 7 , providing a maskless full-color evaporation technology, forming an anode 11 in a pixel area 101 on a substrate 10, and a pixel definition layer 111 is arranged between the anodes 11 corresponding to each pixel area 101. The anode 11 serves as an electrode of the pixel and can inject carriers (such as holes) into the pixel under the drive of an external positive power supply voltage.

[0044] Furthermore, a partition structure 12 is provided between adjacent anodes 11 , and the partition structure 12 is used to prepare organic light-emitting layers 13 of different colors.

[0045] Specifically, the preparation of the organic light-emitting layers 13 of different colors is as follows: Figures 5 to 8 As shown, the substrate 10 includes a pixel area 101, and the pixel area 101 includes a pixel area provided with an organic light-emitting material layer emitting different colors, for example, a pixel area 101R provided with a red organic light-emitting material layer, a pixel area 101G provided with a green organic light-emitting material layer, etc.; an anode 11 is formed in the pixel area 101, a pixel definition layer 111 is formed between the anodes 11, and a first insulating layer 112 is formed on the pixel definition layer 111, and the first insulating layer 112 at least covers each anode 11.

[0046] A partition structure 12 is formed on the first insulating layer 112, and the partition structure 12 includes an auxiliary cathode layer 121 and a partition layer 122, wherein the auxiliary cathode layer 121 is close to the anode 11, and the partition layer 122 is away from the anode 11. The partition structures 12 are all arranged around the pixel area 101, and the defined area can be any shape such as a rectangle, a polygon or a circle, which is not specifically limited in the embodiment of the present invention. Furthermore, the partition layer 122 covers the auxiliary cathode layer 121, and the edge of the partition layer 122 exceeds the edge of the auxiliary cathode layer 121. At this time, the length of the partition layer 122 in the lateral direction is greater than the length of the auxiliary cathode layer 122 in the lateral direction, or, in other words, the projection area of ​​the partition layer 123 on the substrate 10 is greater than the projection area of ​​the auxiliary cathode layer 121 on the substrate 10, so that the edge of the partition layer 122 protrudes further toward the inside of the light-emitting area of ​​the pixel than the edge of the auxiliary cathode layer 121, and the edge of the auxiliary cathode layer 121 is recessed toward the side away from the light-emitting area of ​​the pixel relative to the opening edge of the partition layer 123, so that the edge portion of the partition layer 122 forms an eaves structure above the edge of the auxiliary cathode layer 121.

[0047] The first insulating layer 112 is etched to expose the anode of the pixel area where the organic light-emitting material layer of the first color is set, and the anode of the pixel area where the organic light-emitting material layer of other colors is set is still covered by the first insulating layer 112. For example, the pixel area 101R where the red organic light-emitting material layer is set is exposed, and the first insulating layer 112 is kept covering the pixel area 101G where the green organic light-emitting material layer is set and the pixel areas where the organic light-emitting material layers of other colors are set.

[0048] The first color organic light-emitting material layer is evaporated on the entire surface, for example, the red organic light-emitting material is evaporated on the entire surface, and a red organic light-emitting layer 13R is formed in the pixel area 101R where the red organic light-emitting material layer is set, and a red organic light-emitting material layer R is also formed on the first insulating layer 112 in other areas. The partition structure 12 separates the red organic light-emitting material layers evaporated on the entire surface from each other, and the red organic light-emitting material layers in adjacent pixel areas are not connected to each other. A cathode layer 14 and an encapsulation layer 15' are formed on the red organic light-emitting material layer, and the encapsulation layer 15' encapsulates and protects the red organic light-emitting layer 13R. The cathode layer 14 is connected to the auxiliary cathode layer 121 to connect the cathode signal to each pixel unit, and the cathode layer 14 is also separated from each other by the partition structure 12, and the cathode layers in adjacent pixel areas are not connected to each other.

[0049] When forming the second color organic light-emitting material layer, the encapsulation layer, cathode layer 14, first organic light-emitting material layer, and first insulating layer 112 on the pixel region 101G where the second color organic light-emitting material layer is removed are etched in sequence to expose the anode in the pixel region 101 where the second color organic light-emitting material layer is removed, and then the second color organic light-emitting material layer is evaporated on the entire surface, and then the cathode layer and the encapsulation layer are formed in sequence. For example, if the second color organic light-emitting material layer is a green organic light-emitting material layer, the encapsulation layer, cathode layer 14, red organic light-emitting material layer, and first insulating layer 112 on the pixel region 101G where the green organic light-emitting material layer is removed are etched in sequence to expose the anode in the pixel region 101G where the green organic light-emitting material layer is set, and then the green organic light-emitting material layer is evaporated on the entire surface, and then the cathode layer and the encapsulation layer are formed in sequence. The steps for forming organic light-emitting material layers of other colors are the same.

[0050] In an embodiment of the present invention, a partition structure 12 is provided to divide the organic light-emitting layer 13 prepared in an entire layer, and an organic light-emitting layer 13 of a corresponding color can be formed in each pixel area 101 on the substrate 10 through an etching process (for example, a photolithography process including exposure and development steps), without the need to use a fine metal mask (Fine Metal Mask, FMM), thereby avoiding the problem that the film forming position of the organic light-emitting material layer deviates greatly from the preset position due to the manufacturing deviation, alignment deviation and thermal deformation of the fine metal mask itself, thereby achieving a smaller pixel size and a higher resolution with a lower manufacturing cost.

[0051] In the organic light-emitting display device provided by the embodiment of the present invention, the size of the pixel region 101 can reach 2μm to 3μm, which can be applicable to micro display and near-eye display, and can meet users' high-resolution requirements for organic light-emitting display devices.

[0052] It should be noted that the partition structure 12 is not limited to Figure 3 and Figure 4 In the structure shown, in other embodiments, the structure of the partition structure 12 can be set according to actual needs, and the embodiment of the present invention does not make specific limitations on this.

[0053] Figure 8 FIG. 1 is a schematic diagram of a partial cross-sectional structure of an organic light-emitting display device in the related art. The inventors have found through further research that, in order to effectively separate the organic light-emitting layer 13 and the cathode 14, the upper surface of the partition structure 12 needs to be higher than the upper surface of the cathode 14 in the pixel area 101, for example, Figure 5-Figure 8 As shown in FIG. 1 , the height of the auxiliary cathode layer 121 and the partition layer 122 can reach 1 μm. Figure 8 As shown, the large-angle light emitted by the organic light-emitting layer 13 in the pixel area 101 will be blocked by the partition structure 12 and cannot be directly emitted. This part of the light will be irradiated on the side wall of the partition structure 12. On the one hand, it will continuously form reflections on the side wall of the partition structure 12 to cause scattering, thereby forming a light scattering area around the pixel area 101. The existence of the light scattering area will cause problems such as blurred display images and reduced contrast, affecting the display quality; on the other hand, part of the light irradiated on the side wall of the partition structure 12 will also be absorbed by the partition structure 12 and cannot be emitted, thereby causing a decrease in light extraction efficiency, affecting the display brightness of the organic light-emitting display device.

[0054] Based on the above technical problems, in this embodiment, a thin film encapsulation structure 15 including multiple thin film encapsulation layers is arranged on the cathode 14, such as Figure 3 or Figure 4 As shown, the thin film encapsulation structure 15 includes a first thin film encapsulation layer 151 and a second thin film encapsulation layer 152. The thin film encapsulation structure 15 at least covers the pixel area 101 and can be used to protect the pixels in the pixel area 101 from water and oxygen to prevent water vapor and oxygen from penetrating into the organic light-emitting display device, thereby avoiding poor display problems caused thereby and enhancing the water and oxygen protection capability of the organic light-emitting display device.

[0055] Among them, along the direction from the substrate 10 to the thin film encapsulation structure 15, the refractive index of the multi-layer thin film encapsulation layer of the thin film encapsulation structure 15 increases sequentially, that is, as the distance from the substrate 10 increases, the refractive index of the thin film encapsulation layer gradually increases. At this time, the farther the thin film encapsulation layer is from the organic light-emitting layer 13 in the pixel area 101, the greater its refractive index. For example, the refractive index of the second thin film encapsulation layer 152 is greater than the refractive index of the first thin film encapsulation layer.

[0056] Fig. 9 A partial cross-sectional structural diagram of another organic light emitting display device provided by an embodiment of the present invention is shown in FIG. Fig. 9As shown, in the present embodiment, the large-angle light emitted by the organic light-emitting layer 13 in the pixel area 101 will be emitted after passing through the thin film encapsulation structure 15, wherein, along the propagation direction of the light, the refractive index of each thin film encapsulation layer of the thin film encapsulation structure 15 increases successively, then in the process of light propagation, the light will enter the thin film encapsulation layer with a larger refractive index from the thin film encapsulation layer with a smaller refractive index, according to Snell's law, the large-angle light will be refracted, and the angle of the light (that is, the angle between the light and the normal of the upper surface of the thin film encapsulation structure 15) will become smaller, due to the reduction in the angle of the light, at least part of the large-angle light will no longer irradiate the side wall of the partition structure 12, but will be emitted directly through the thin film encapsulation structure 15, thereby reducing the amount of light irradiating the side wall of the partition structure 12, on the one hand, it can reduce the reflection of the light on the side wall of the partition structure 12, weaken the scattering phenomenon, thereby reducing the formation of the light scattering area 22, and improving the display quality; on the other hand, it can also reduce the absorption of light by the partition structure 12, thereby improving the light extraction efficiency.

[0057] To summarize, the organic light-emitting display device provided by the embodiment of the present invention has an encapsulation structure including a plurality of thin-film encapsulation layers arranged in the pixel region, and the refractive indices of the plurality of thin-film encapsulation layers are increased successively along the direction of the substrate toward the thin-film encapsulation layers. In the process of light propagation, the light enters the thin-film encapsulation layer with a larger refractive index from the thin-film encapsulation layer with a smaller refractive index, causing the light to be refracted and reducing the angle of the light, thereby reducing the amount of light irradiated on the side wall of the partition structure. On the one hand, the reflection of the light on the side wall of the partition structure is reduced, the scattering phenomenon is weakened, and the display quality is improved; on the other hand, the absorption of light by the partition structure is reduced, thereby improving the light extraction efficiency and improving the display brightness of the organic light-emitting display device.

[0058] Optionally, the difference in refractive index between two adjacent thin-film encapsulation layers is greater than or equal to 0.2.

[0059] Among them, in any two adjacent thin film encapsulation layers, the refractive index of the thin film encapsulation layer on the side away from the substrate 10 is at least 0.2 greater than the refractive index of the thin film encapsulation layer on the side close to the substrate 10, so that there is a sufficient refractive index difference between the two adjacent thin film encapsulation layers. In this way, at the interface between the two adjacent thin film encapsulation layers, the angle of the light will be effectively reduced, thereby significantly reducing the amount of light irradiated on the side wall of the partition structure 12. On the one hand, it can further reduce the reflection of light on the side wall of the partition structure 12, weaken the scattering phenomenon, and improve the display quality; on the other hand, it can also further reduce the absorption of light by the partition structure 12, thereby improving the light extraction efficiency.

[0060] Optionally, the thickness of the thin film encapsulation layer is greater than or equal to 50 nm.

[0061] If the thickness of a single-layer thin film encapsulation layer is too thin, it may not be sufficient to form effective refraction, so that the angle of light is not noticeably reduced. At the same time, if the thickness of the thin film encapsulation layer is too thin, it will also increase the difficulty of manufacturing.

[0062] In this embodiment, by setting the thickness of each thin film encapsulation layer such as the first thin film encapsulation layer 151 and the second thin film encapsulation layer 152 to be greater than or equal to 50nm, the thin film encapsulation layer can have a sufficient thickness, ensuring that light is effectively refracted at the interface between two adjacent thin film encapsulation layers, while reducing the exit angle, it is easier to achieve uniform deposition, which can improve the fault tolerance of the manufacturing process, reduce the performance degradation caused by uneven film thickness or defects, and is easy to achieve.

[0063] Continue to refer Figure 3 , Figure 4 and Fig. 9 Optionally, the refractive index of the first thin film encapsulation layer 151 closest to the substrate 10 is greater than or equal to 1.5 and less than or equal to 1.6.

[0064] Among them, the first thin film encapsulation layer 151 can be understood as the first thin film encapsulation layer prepared on the cathode 14. The first thin film encapsulation layer 151 is the thin film encapsulation layer closest to the organic light-emitting layer 13 in the pixel area 101, and is also the first thin film encapsulation layer through which the light emitted by the organic light-emitting layer 13 passes.

[0065] In this embodiment, the first thin film encapsulation layer 151 serves as the thin film encapsulation layer 15 with the smallest refractive index in the thin film encapsulation structure 15, and its refractive index is less than or equal to 1.6, which is conducive to forming a larger refractive index difference between the first thin film encapsulation layer 151 and the thin film encapsulation layer adjacent to it, thereby making it easier to reduce the angle of light, reduce the amount of light irradiated on the side wall of the partition structure 12, weaken the scattering phenomenon, and reduce the absorption of light by the partition structure 12, thereby improving the light extraction efficiency and display quality.

[0066] Meanwhile, the refractive index of the first thin film encapsulation layer 151 is greater than or equal to 1.5, which can make the material selection of the first thin film encapsulation layer 151 more extensive and practical, and is conducive to reducing costs and facilitating implementation.

[0067] The specific refractive index of the first thin film encapsulation layer 151 may be selected according to actual needs, and the embodiment of the present invention does not specifically limit this.

[0068] Continue to refer Figure 3 , Figure 4 and Fig. 9 Optionally, the thin film encapsulation layer closest to the substrate 10 is the first thin film encapsulation layer 151, and the material of the first thin film encapsulation layer 151 includes silicon oxide (SiO2).

[0069] The film layer position of the first thin film encapsulation layer 151 may refer to the above embodiment, which will not be described in detail herein.

[0070] In this embodiment, the material of the first thin film encapsulation layer 151 can be silicon oxide, wherein silicon oxide has a lower refractive index, which can form a larger refractive index difference between the first thin film encapsulation layer 151 and the thin film encapsulation layer adjacent to it, thereby making it easier to reduce the angle of the light, reduce the amount of light irradiated on the side wall of the partition structure 12, weaken the scattering phenomenon, and reduce the absorption of light by the partition structure 12, thereby improving the light output efficiency and display quality.

[0071] At the same time, silicon oxide has high transparency, which can effectively transmit light and reduce the reflection and absorption of light at the interface.

[0072] In addition, silicon oxide has excellent chemical stability, can effectively prevent the penetration of water vapor and oxygen, and provide good barrier properties.

[0073] It should be noted that the refractive index of silicon oxide can be adjusted through different preparation methods so that the refractive index of the first thin film encapsulation layer 151 can better meet application requirements, which is not specifically limited in the embodiment of the present invention.

[0074] Continue to refer Figure 3 , Figure 4 and Fig. 9 Optionally, the thin film encapsulation layer farthest from the substrate 10 is the second thin film encapsulation layer 152, and the refractive index of the second thin film encapsulation layer 152 is greater than or equal to 1.8 and less than or equal to 2.6.

[0075] Among them, the second thin film encapsulation layer 152 can be understood as the last thin film encapsulation layer prepared on the cathode 14. The second thin film encapsulation layer 152 is the thin film encapsulation layer farthest from the organic light-emitting layer 13 in the pixel area 101, and is also the last thin film encapsulation layer through which the light emitted by the organic light-emitting layer 13 passes.

[0076] In this embodiment, the second thin film encapsulation layer 152 is the thin film encapsulation layer with the largest refractive index among all the thin film encapsulation structures 15, and its refractive index is greater than or equal to 1.8, which is conducive to forming a larger refractive index difference between the second thin film encapsulation layer 152 and the thin film encapsulation layer adjacent to it, thereby making it easier to reduce the angle of the light, reduce the amount of light irradiated on the side wall of the partition structure 12, weaken the scattering phenomenon, and reduce the absorption of light by the partition structure 12, thereby improving the light output efficiency and display quality.

[0077] Meanwhile, the refractive index of the second thin film encapsulation layer 152 is less than or equal to 2.6, which can make the material selection of the second thin film encapsulation layer 152 more extensive and practical, and is conducive to reducing costs and facilitating implementation.

[0078] Among them, the specific refractive index of the second thin film encapsulation layer 152 can be selected according to actual needs. For example, the refractive index of the second thin film encapsulation layer 152 is further limited to between 1.8 and 2.0 to make the material selection of the second thin film encapsulation layer 152 more practical. The embodiment of the present invention does not make specific limitations on this.

[0079] Continue to refer Figure 3 , Figure 4 and Fig. 9 Optionally, the thin film encapsulation layer farthest from the substrate 10 is the second thin film encapsulation layer 152, and the material of the second thin film encapsulation layer 152 includes at least one of silicon nitride (SiN), zirconium oxide (ZrO2) and titanium oxide (TiO2).

[0080] The film layer position of the second thin film encapsulation layer 152 may refer to the above-mentioned embodiment, which will not be described in detail herein.

[0081] In this embodiment, the material of the second thin film encapsulation layer 152 can be one or more of silicon nitride, zirconium oxide and titanium oxide, wherein silicon nitride, zirconium oxide and titanium oxide all have a relatively high refractive index, which can form a larger refractive index difference between the second thin film encapsulation layer 152 and the thin film encapsulation layer adjacent thereto, thereby making it easier to reduce the angle of the light, reduce the amount of light irradiated on the side wall of the partition structure 12, weaken the scattering phenomenon, and reduce the absorption of light by the partition structure 12, thereby improving the light output efficiency and display quality.

[0082] At the same time, silicon nitride, zirconium oxide and titanium oxide all have high transparency, which can effectively transmit light and reduce the reflection and absorption of light at the interface.

[0083] In addition, silicon nitride, zirconium oxide and titanium oxide have excellent chemical stability, can effectively prevent the penetration of water vapor and oxygen, and provide good barrier properties.

[0084] The refractive index of silicon nitride, zirconium oxide or titanium oxide can be adjusted through different preparation methods so that the refractive index of the second thin film encapsulation layer 152 can better meet application requirements, which is not specifically limited in the embodiment of the present invention.

[0085] Fig.10 A partial cross-sectional structural diagram of another organic light emitting display device provided by an embodiment of the present invention is shown in FIG. Fig.10As shown, optionally, in the thin film encapsulation structure 15, the thin film encapsulation layer closest to the substrate 10 is the first thin film encapsulation layer 151, the thin film encapsulation layer farthest from the substrate 10 is the second thin film encapsulation layer 152, and a third thin film encapsulation layer 153 is further arranged between the first thin film encapsulation layer 151 and the second thin film encapsulation layer 152, and the refractive index of the third thin film encapsulation layer 153 is greater than or equal to 1.6 and less than or equal to 1.8.

[0086] The film layer positions of the first thin film encapsulation layer 151 and the second thin film encapsulation layer 152 may refer to the above embodiments, and will not be described in detail herein.

[0087] In this embodiment, the third thin film encapsulation layer 153 can be understood as a thin film encapsulation layer prepared after the first thin film encapsulation layer 151 is prepared and before the second thin film encapsulation layer 152 is prepared. Fig.10 As shown, the third thin film encapsulation layer 153 is the upper film layer of the first thin film encapsulation layer 151, and the third thin film encapsulation layer 153 is the lower film layer of the second thin film encapsulation layer 152. The light emitted by the organic light-emitting layer 13 in the pixel area 101 is transmitted through the first thin film encapsulation layer 151, the third thin film encapsulation layer 153 and the second thin film encapsulation layer 152 in sequence and then emitted.

[0088] The refractive index of the third thin film encapsulation layer 153 is greater than the refractive index of the first thin film encapsulation layer 151 , and the refractive index of the third thin film encapsulation layer 153 is less than the refractive index of the second thin film encapsulation layer 152 .

[0089] In this embodiment, the refractive index of the third thin film encapsulation layer 153 is greater than or equal to 1.6, which is conducive to forming a larger refractive index difference between the third thin film encapsulation layer 153 and the first thin film encapsulation layer 151, thereby making it easier to reduce the angle of the light; at the same time, the refractive index of the third thin film encapsulation layer 153 is less than or equal to 1.8, which is conducive to forming a larger refractive index difference between the third thin film encapsulation layer 153 and the second thin film encapsulation layer 152, thereby making it easier to reduce the angle of the light, thereby reducing the amount of light irradiated on the side wall of the partition structure 12, weakening the scattering phenomenon, and reducing the absorption of light by the partition structure 12, thereby improving the light extraction efficiency and display quality.

[0090] The specific refractive index of the third thin-film encapsulation layer 153 may be selected according to actual needs, and the embodiment of the present invention does not specifically limit this.

[0091] Continue to refer Fig.10Optionally, the thin film encapsulation layer closest to the substrate 10 is the first thin film encapsulation layer 151, the thin film encapsulation layer farthest from the substrate 10 is the second thin film encapsulation layer 152, and a third thin film encapsulation layer 153 is further arranged between the first thin film encapsulation layer 151 and the second thin film encapsulation layer 152, and the material of the third thin film encapsulation layer 153 includes at least one of silicon oxynitride (SiON) and silicon nitride (SiN).

[0092] The film positions of the first thin film encapsulation layer 151 , the second thin film encapsulation layer 152 and the third thin film encapsulation layer 153 may refer to the above embodiments, and will not be described in detail herein.

[0093] In this embodiment, the material of the third thin film encapsulation layer 153 is silicon oxynitride and / or silicon nitride, wherein both silicon oxynitride and silicon nitride have a suitable refractive index, so that the refractive index of the third thin film encapsulation layer 153 can be located between the refractive index of the first thin film encapsulation layer 151 and the refractive index of the second thin film encapsulation layer 152, thereby easily achieving a reduction in the angle of light, reducing the amount of light irradiated on the side wall of the partition structure 12, weakening the scattering phenomenon, and reducing the absorption of light by the partition structure 12, thereby improving the light extraction efficiency and display quality.

[0094] At the same time, both silicon oxynitride and silicon nitride have high transparency, which can effectively transmit light and reduce the reflection and absorption of light at the interface.

[0095] In addition, silicon oxynitride and silicon nitride have excellent chemical stability, can effectively prevent the penetration of water vapor and oxygen, and provide good barrier properties.

[0096] The refractive index of silicon oxynitride and / or silicon nitride may be adjusted through different preparation methods so that the refractive index of the third thin film encapsulation layer 153 can better meet application requirements, which is not specifically limited in the embodiment of the present invention.

[0097] It should be noted that by selecting materials for the first thin film encapsulation layer 151, the second thin film encapsulation layer 152 and the third thin film encapsulation layer 153, the third thin film encapsulation layer 153 can be used as a transition film layer between the first thin film encapsulation layer 151 and the second thin film encapsulation layer 152 to improve the film quality.

[0098] For example, the material of the first thin film encapsulation layer 151 is silicon oxide, which is composed of oxygen and silicon elements; the material of the third thin film encapsulation layer 153 can be silicon oxynitride, which is composed of nitrogen, oxygen and silicon elements; the material of the second thin film encapsulation layer 152 is silicon nitride, which is composed of nitrogen and silicon elements, so that a gradual transition of materials is formed between the first thin film encapsulation layer 151, the third thin film encapsulation layer 153 and the second thin film encapsulation layer 152, reducing the interface stress between adjacent thin film encapsulation layers 15, avoiding the occurrence of thin film cracking, peeling or other defects, improving the quality of the film layer, and thus ensuring the effect of water and oxygen protection.

[0099] In other embodiments, the materials of the first thin film encapsulation layer 151 , the second thin film encapsulation layer 152 and the third thin film encapsulation layer 153 may also be selected from other materials according to actual needs, and the embodiment of the present invention does not specifically limit this.

[0100] It should be noted that Figure 3 , Figure 4 and Fig. 9 In the figure, the thin film encapsulation structure 15 including two thin film encapsulation layers is used as an example for illustration. Fig.10 In the figure, only the example of the thin film encapsulation structure 15 including three thin film encapsulation layers is used for illustration, but it is not limited to this. In other embodiments, the thin film encapsulation structure 15 may also include more thin film encapsulation layers. By increasing the refractive index layer by layer, the large-angle light emitted by the organic light-emitting layer 13 in the pixel area 101 undergoes more refractions before being emitted, and the incident angle of the light on each layer interface is gradually reduced, thereby further reducing the light angle, reducing the amount of light irradiated on the side wall of the partition structure 12, weakening the scattering phenomenon, and reducing the absorption of light by the partition structure 12, thereby improving the light extraction efficiency and display quality; at the same time, it is also beneficial to enhance the water and oxygen protection capability of the organic light-emitting display device.

[0101] The specific number of layers of the thin film encapsulation structure 15 can be set according to actual needs, and the embodiment of the present invention does not specifically limit this.

[0102] Continue to refer Figure 3 , Figure 4 and Fig.10 Optionally, the thin film encapsulation layer 15 closest to the substrate 10 is the first thin film encapsulation layer 151, and the thin film encapsulation layer 15 farthest from the substrate 10 is the second thin film encapsulation layer 152, and the distance from the lower surface of the second thin film encapsulation layer 152 above the anode 11 to the substrate 10 is less than or equal to the distance from the upper surface of the first thin film encapsulation layer 151 above the partition structure 12 to the substrate 10.

[0103] The film layer positions of the first thin film encapsulation layer 151 and the second thin film encapsulation layer 152 may refer to the above embodiments, and will not be described in detail herein.

[0104] like Figure 3 , Figure 4 and Fig.10 As shown, the lower surface of the second thin film encapsulation layer 152 above the anode 11 is the first surface S1, and the upper surface of the first thin film encapsulation layer 151 above the partition structure 12 is the second surface S2, wherein the first surface S1 is the last interface where light is refracted in the multi-layer thin film encapsulation layer. Therefore, after the light is refracted at the first surface S1, the entire process of the thin film encapsulation layer 15 reducing the angle of the light will be completed.

[0105] It can be understood that the earlier the process of reducing the light angle is completed, the more large-angle light will complete the change of propagation direction before irradiating the side wall of the partition structure 12, so that more large-angle light that would originally irradiate the side wall of the partition structure 12 will no longer irradiate the side wall of the partition structure 12, but will be directly emitted through the thin film packaging structure 15, thereby helping to reduce the amount of light irradiating the side wall of the partition structure 12.

[0106] In this embodiment, the first surface S1 is set not higher than the second surface S2, so that before the light is transmitted to a position higher than the second surface S2, the thin film encapsulation layer 15 can complete the process of reducing the angle of the light, so that before the light is transmitted to a position higher than the second surface S2, more large-angle light that would otherwise be blocked by the partition structure 12 can be directly emitted, thereby effectively reducing the amount of light irradiated on the side wall of the partition structure 12, weakening the scattering phenomenon, and reducing the absorption of light by the partition structure 12, thereby improving the light extraction efficiency and display quality.

[0107] Continue to refer Figure 3 , Figure 4 and Fig.10 Optionally, the thickness of the first thin film encapsulation layer 151 is smaller than the thickness of the second thin film encapsulation layer 152 , and / or the thickness of the third thin film encapsulation layer 153 is smaller than the thickness of the second thin film encapsulation layer 152 .

[0108] Among them, Figure 3 , Figure 4 and Fig.10 As shown, by setting the first thin film encapsulation layer 151 and / or the third thin film encapsulation layer 153 to have a thinner thickness, the height of the first surface S1 of the second thin film encapsulation layer 152 can be reduced, so as to speed up the process of reducing the angle of the light during the propagation of the light, which is conducive to allowing more large-angle light that would originally be blocked by the partition structure 12 to be directly emitted, thereby effectively reducing the amount of light irradiated on the side wall of the partition structure 12, weakening the scattering phenomenon, and reducing the absorption of light by the partition structure 12, thereby improving the light extraction efficiency and display quality.

[0109] Furthermore, the second thin film encapsulation layer 152 can be set as the thin film encapsulation layer with the largest thickness among all the thin film encapsulation structures 15. In this case, the other thin film encapsulation layers except the second thin film encapsulation layer 152 can have a thinner thickness, thereby reducing the height of the first surface S1 of the second thin film encapsulation layer 152, thereby effectively reducing the amount of light irradiated on the side wall of the partition structure 12.

[0110] At the same time, the second thin film encapsulation layer 152, as the topmost thin film encapsulation layer, has a thicker thickness, which is more conducive to achieving a flattening effect, thereby obtaining a flat upper surface, which helps to ensure the completion quality of subsequent process steps (such as coating other materials, bonding the cover, etc.) and avoid defects caused by the uneven upper surface of the second thin film encapsulation layer 152.

[0111] Continue to refer Figure 3 , Figure 4 and Fig.10 The thin film encapsulation structure 15 covers the partition structure 12. The partition structures 12 between the pixel regions 101 and the pixel regions 101 are all covered by the thin film encapsulation structure 15, which is helpful to prevent water vapor and oxygen from penetrating into the organic light emitting display device, thereby avoiding the display problems caused thereby, and enhancing the water and oxygen protection capability of the organic light emitting display device.

[0112] Continue to refer Figure 3 , Figure 4 and Fig.10 Optionally, the thin film encapsulation layer farthest from the substrate 10 is the second thin film encapsulation layer 152, and the height difference between the upper surface of the second thin film encapsulation layer 152 in the pixel area 101 and the upper surface of the second thin film encapsulation layer 152 between the pixel areas 101 is less than or equal to 0.1 μm.

[0113] The film layer position of the second thin film encapsulation layer 152 may refer to the above-mentioned embodiment, which will not be described in detail herein.

[0114] Fig.11 FIG. 1 is a schematic diagram of a partial cross-sectional structure of another organic light emitting display device in the related art. Fig.11As shown, the inventors have found through further research that in order to effectively isolate the organic light-emitting layer 13 and the cathode 14, there is a large height difference between the upper surface of the partition structure 12 and the upper surface of the anode 11. When the thin film encapsulation structure 15' is deposited on the partition structure 12 and the anode 11, the upper surface of the thin film encapsulation structure 15' in the pixel area 101 is often lower than the upper surface of the thin film encapsulation structure 15' above the partition structure 12, thereby forming an obvious pit on the upper surface of the thin film encapsulation structure 15', and the refractive index of the film layer located above the thin film encapsulation structure 15' is usually lower than the refractive index of the thin film encapsulation structure 15', so that part of the light will be refracted at the side wall of the pit, and the exit angle will increase, thereby forming a light scattering area around the pixel area 101, resulting in problems such as blurred displayed image and reduced contrast, affecting the display quality.

[0115] Based on the above technical issues, such as Figure 3 , Figure 4 and Fig.12 As shown, in the present embodiment, the upper surface of the second thin film encapsulation layer 152 in the pixel area 101 is the third surface S3, and the upper surface of the second thin film encapsulation layer 152 between the pixel areas 101 is the fourth surface S4. By setting the height difference between the third surface S3 and the fourth surface S4 to be less than or equal to 0.1 μm, the coverage area of ​​the side wall of the pit is reduced, thereby reducing the amount of light refracted at the side wall of the pit, thereby reducing the formation of the light scattering area, and improving the display quality.

[0116] Furthermore, if Figure 3 , Figure 4 and Fig.12 As shown, the upper surface of the second thin film encapsulation layer 152 in the pixel area 101 (i.e., the third surface S3) is flush with the upper surface of the second thin film encapsulation layer 152 between the pixel areas 101 (i.e., the fourth surface S4), that is, the third surface S3 and the fourth surface S4 are located on the same horizontal plane. At this time, the heights of the third surface S3 and the fourth surface S4 are the same, so that the pits on the upper surface of the second thin film encapsulation layer 152 can be eliminated, thereby preventing the light from being refracted and diverged at the side walls of the pits, further reducing the formation of light scattering areas, and improving the display quality.

[0117] Fig.12 A partial cross-sectional structural diagram of another organic light emitting display device provided by an embodiment of the present invention is shown in FIG. Fig.12 As shown, optionally, the thin film encapsulation structure 15 is located in the pixel area 101 .

[0118] Specifically, Fig.12As shown, the thin film encapsulation structure 15 can be set only in the pixel area 101. At this time, the thin film encapsulation structure 15 does not cover the partition structure 12. In this way, the thickness of the thin film encapsulation structure 15 in the non-pixel area can be reduced, thereby reducing the overall thickness of the organic light-emitting display device, which is conducive to realizing a lightweight design of the organic light-emitting display device.

[0119] Continue to refer Fig.12 Optionally, the thin film encapsulation layer farthest from the substrate 10 is the second thin film encapsulation layer 152, and the height difference between the upper surface of the second thin film encapsulation layer 152 and the upper surface of the cathode 14 above the partition structure 12 is less than or equal to 0.1 μm.

[0120] The film layer position of the second thin film encapsulation layer 152 may refer to the above-mentioned embodiment, which will not be described in detail herein.

[0121] In this embodiment, if Fig.12 As shown, the upper surface of the second thin film encapsulation layer 152 in the pixel area 101 is the third surface S3, and the upper surface of the cathode 14 above the partition structure 12 is the fifth surface S5. By setting the height difference between the third surface S3 and the fifth surface S5 to be less than or equal to 0.1μm, the coverage area of ​​the side wall of the pit formed between the upper surface of the second thin film encapsulation layer 152 and the upper surface of the cathode 14 can be reduced, thereby reducing the amount of light refracted at the side wall of the pit, thereby reducing the formation of the light scattering area and improving the display quality.

[0122] Furthermore, if Fig.12 As shown, the upper surface of the second thin-film encapsulation layer 152 in the pixel area 101 (i.e., the third surface S3) is flush with the upper surface of the cathode 14 above the partition structure 12 (i.e., the fifth surface S5), that is, the third surface S3 and the fifth surface S5 are located on the same horizontal plane. At this time, the heights of the third surface S3 and the fifth surface S5 are the same, which can eliminate the pits formed on the upper surfaces of the second thin-film encapsulation layer 152 and the cathode 14, thereby preventing the light from being refracted and diverged at the side walls of the pits, further reducing the formation of light scattering areas, and improving the display quality.

[0123] Continue to refer Figure 3 , Figure 4 , Fig.10 , Fig.12 Optionally, the organic light emitting display device further includes a glue layer 16 disposed on the thin film encapsulation structure 15 and a cover plate 17 disposed on the glue layer 16 .

[0124] The cover plate 17 is used to protect the entire organic light emitting display device and improve the scratch resistance and impact resistance of the organic light emitting display device. The cover plate 17 can be a glass cover plate to provide higher transparency and good mechanical strength, but is not limited thereto.

[0125] The adhesive layer 16 is used to bond the cover plate 17 , wherein the adhesive layer 16 may be made of transparent optical adhesive (such as UV curing adhesive, epoxy resin, etc.) to provide higher transparency and good adhesion, but is not limited thereto.

[0126] Optionally, the organic light emitting display device provided in the embodiment of the present invention is a silicon-based micro organic light emitting display device.

[0127] Among them, the silicon-based micro-organic light-emitting display device (Silicon-based Micro-OLED Display) combines the silicon-based integrated circuit (CMOS) process and the organic light-emitting diode (OLED) technology to integrate the OLED pixel array directly onto the silicon wafer to form a micro-display.

[0128] Silicon-based micro-organic light-emitting display devices are small, light, low power consumption, high brightness, fast response speed and wide viewing angle. They are suitable for use in near-eye display devices such as virtual reality (VR), augmented reality (AR) headsets, head-up display (HUD) systems, micro-projectors and other portable electronic products with strict requirements on size, weight and energy consumption.

[0129] The above specific implementations do not constitute a limitation on the protection scope of the present invention. It should be understood by those skilled in the art that various modifications, combinations, sub-combinations and substitutions can be made according to design requirements and other factors. Any modification, equivalent substitution and improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims

1. An organic light emitting display device, characterized in that: include: A substrate, the substrate comprising a plurality of pixel regions arranged at intervals; an anode disposed in the pixel region; a pixel definition layer disposed between the anodes; A partition structure disposed on the pixel definition layer; An organic light-emitting layer is disposed on the anode, wherein the organic light-emitting layers of the plurality of pixel regions are separated by the partition structure and are not connected to each other, and the organic light-emitting layers of at least two adjacent pixel regions are organic light-emitting material layers emitting different colors; A cathode disposed on the organic light-emitting layer; A thin film encapsulation structure disposed on the cathode, the thin film encapsulation structure is at least located in the pixel area, and the thin film encapsulation structure includes a plurality of thin film encapsulation layers; Along the direction from the substrate to the thin film encapsulation structure, the refractive index of the multi-layer thin film encapsulation layer increases sequentially.

2. The organic light emitting display device according to claim 1, characterized in that: The difference in refractive index between two adjacent thin film encapsulation layers is greater than or equal to 0.

2.

3. The organic light emitting display device according to claim 1, wherein: The thickness of the thin film encapsulation layer is greater than or equal to 50 nm.

4. The organic light emitting display device according to claim 1, wherein: The thin film encapsulation layer closest to the substrate is a first thin film encapsulation layer; The refractive index of the first thin film encapsulation layer is greater than or equal to 1.5 and less than or equal to 1.

6.

5. The organic light emitting display device according to claim 1, wherein: The thin film encapsulation layer closest to the substrate is a first thin film encapsulation layer; The material of the first thin film encapsulation layer includes silicon oxide.

6. The organic light emitting display device according to claim 1, wherein: The thin film encapsulation layer farthest from the substrate is the second thin film encapsulation layer; The refractive index of the second thin film encapsulation layer is greater than or equal to 1.8 and less than or equal to 2.

6.

7. The organic light emitting display device according to claim 1, wherein: The thin film encapsulation layer farthest from the substrate is the second thin film encapsulation layer; The material of the second thin film encapsulation layer includes at least one of silicon nitride, zirconium oxide and titanium oxide.

8. The organic light emitting display device according to claim 1, wherein: The thin film encapsulation layer closest to the substrate is a first thin film encapsulation layer; The thin film encapsulation layer farthest from the substrate is the second thin film encapsulation layer; A third thin film encapsulation layer is further provided between the first thin film encapsulation layer and the second thin film encapsulation layer; The refractive index of the third thin film encapsulation layer is greater than or equal to 1.6 and less than or equal to 1.

8.

9. The organic light emitting display device according to claim 1, wherein: The thin film encapsulation layer closest to the substrate is a first thin film encapsulation layer; The thin film encapsulation layer farthest from the substrate is the second thin film encapsulation layer; A third thin film encapsulation layer is further provided between the first thin film encapsulation layer and the second thin film encapsulation layer; The material of the third thin film encapsulation layer includes at least one of silicon oxynitride and silicon nitride.

10. The organic light emitting display device according to claim 1, wherein: The thin film encapsulation layer closest to the substrate is a first thin film encapsulation layer; The thin film encapsulation layer farthest from the substrate is the second thin film encapsulation layer; The distance from the lower surface of the second thin film encapsulation layer above the anode to the substrate is less than or equal to the distance from the upper surface of the first thin film encapsulation layer above the partition structure to the substrate.

11. The organic light emitting display device according to claim 1, wherein: The thin film encapsulation layer covers the partition structure.

12. The organic light emitting display device according to claim 11, characterized in that: The thin film encapsulation layer farthest from the substrate is the second thin film encapsulation layer; A height difference between an upper surface of the second thin film encapsulation layer in the pixel region and an upper surface of the second thin film encapsulation layer between the pixel regions is less than or equal to 0.1 μm.

13. The organic light emitting display device according to claim 12, wherein: The thin film encapsulation layer farthest from the substrate is the second thin film encapsulation layer; A height difference between an upper surface of the second thin film encapsulation layer and an upper surface of the cathode above the partition structure is less than or equal to 0.1 μm.

14. The organic light emitting display device according to claim 1, wherein: The partition structure comprises an auxiliary cathode layer and a partition layer, wherein the auxiliary cathode layer is close to one side of the anode and the partition layer is far away from one side of the anode; the partition layer covers the auxiliary cathode layer, and an edge of the partition layer exceeds an edge of the auxiliary cathode layer.

15. The organic light emitting display device according to claim 14, characterized in that: The cathode layers of the plurality of pixel regions are connected to the adjacent auxiliary cathode layers.

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