High-power microwave stress test system and method

Abstract

The invention relates to the technical field of stress test, and discloses a high-power microwave stress test system and method, and the system comprises a test control module, and a stress test module, a signal path module and a parameter characterization module which are connected with the test control module. The signal path module is connected with the stress test module and the parameter characterization module. The stress test module is used for generating a high-power microwave pulse signal; the signal path module is used for conducting a corresponding signal channel; and the parameter characterization module is used for generating an analog working signal and carrying out signal characterization on the device to be tested. According to the invention, through the stress test of the narrow-spectrum high-power microwave pulse and the synchronous test of parameter characterization, the test requirements of narrow-spectrum high-power microwave pulse injection under different conditions are met, and through introducing the de-embedding idea, the accuracy of the stress test result is improved, and the test efficiency is improved. And data support is provided for device design of reverse guidance products and reinforcement protection of key sensitive parts of the system.

Description

Technical Field

[0001] The present invention relates to the technical field of stress testing, and in particular to a high-power microwave stress testing system and method. Background Art

[0002] High-power microwaves usually refer to strong electromagnetic pulses with a frequency between 300MHz and 300GHz, a peak power of more than 100MW, and an average power of more than 1MW. This form of high-energy radiation can be used to directional destroy sensitive components inside communication reconnaissance equipment. High-power microwaves with carrier frequencies, commonly used for air defense, anti-missile defense, and anti-reconnaissance, are narrow-spectrum high-power microwaves, which refer to high-power microwaves with pulse widths ranging from tens of ns to tens of us and a spectrum ranging from tens of MHz to hundreds of MHz. Compared with other forms of strong electromagnetic pulses, they can release huge amounts of energy in a very short period of time and have a more concentrated energy density.

[0003] The degradation of electronic devices subjected to narrow-spectrum high-power pulses has increasingly become a focus of research in the field of high-energy radiation. This process can reversely guide device design and the reinforcement and protection of key sensitive parts of the system, which is of great significance to improving product reliability. However, for the current stress test of high-power microwaves, the conventional test method requires manual control of stress input throughout the process. The effect, monitoring and characterization experimental platforms of the device are separated, and the position of the sample to be tested needs to be constantly adjusted, which not only consumes a lot of time and labor costs, but also fails to meet the test accuracy requirements of the product. Summary of the invention

[0004] In order to solve the above technical problems, the present invention provides a high-power microwave stress testing system and method, which can solve the problems of cumbersome operation and low testing accuracy in the prior art, and achieve the technical effect of simplifying the testing process and improving testing efficiency and testing accuracy.

[0005] In a first aspect, the present invention provides a high-power microwave stress testing system, the system comprising:

[0006] A test control module, and a stress test module, a signal path module and a parameter characterization module connected to the test control module, wherein the signal path module is connected to the stress test module and the parameter characterization module respectively;

[0007] The stress test module is used to generate a high-power microwave pulse signal according to a first control instruction from the test control module, and input the pulse signal into the signal path module;

[0008] The signal path module is used to conduct the corresponding signal channel according to the second control instruction from the test control module to achieve time-division multiplexing of the signal channel, and the signal channel includes a stress test signal channel and a simulation test signal channel;

[0009] Wherein, the signal path module includes a first bidirectional coupler, a second bidirectional coupler, a third bidirectional coupler, a first radio frequency switch, a second radio frequency switch and a single-chip microcomputer, the first bidirectional coupler is connected to the stress test module and the first radio frequency switch respectively, the second bidirectional coupler is connected to the third bidirectional coupler, a device to be tested is connected between the first bidirectional coupler and the second bidirectional coupler, the first radio frequency switch and the second radio frequency switch are both connected to the parameter characterization module and the single-chip microcomputer, and the single-chip microcomputer is connected to a test control module;

[0010] The stress test signal channel is composed of the first bidirectional coupler, the second bidirectional coupler, and the third bidirectional coupler, the analog test signal channel is composed of the first RF switch, the second RF switch, the first bidirectional coupler, and the second bidirectional coupler, and the conduction of the analog test signal channel is controlled by the selection signal generated by the single chip microcomputer according to the second control instruction;

[0011] The parameter characterization module is used to generate a simulated working signal of the device under test according to a third control instruction from the test control module, and input the analog working signal to the first radio frequency switch and the second radio frequency switch respectively, and to perform signal characterization on the device under test and input the obtained characterization signal to the test control module;

[0012] The test control module is used to generate control instructions for the stress test module, the signal path module and the parameter characterization module, the control instructions include a first control instruction, a second control instruction and a third control instruction, and perform failure point determination on the received characterization signal to achieve stress testing of high-power microwaves.

[0013] Furthermore, the stress test module includes a function generator, a signal source, a power amplifier and a circulator connected in sequence, the function generator and the signal source are both connected to the test control module, and the circulator is connected to the first bidirectional coupler.

[0014] Further, the device under test is an active radio frequency front-end device;

[0015] The parameter characterization module includes a vector network analyzer and a direct current power supply, the vector network analyzer is respectively connected to the first radio frequency switch, the second radio frequency switch, the direct current power supply and the test control module, and the direct current power supply is respectively connected to the first radio frequency switch, the second radio frequency switch, the device under test and the test control module;

[0016] The vector network analyzer is used to generate an analog working signal of the device under test according to the third control instruction, and input the analog working signal to the first radio frequency switch and the second radio frequency switch respectively, and to perform signal characterization on the device under test, and input the obtained characterization signal to the test control module;

[0017] The DC power supply is used to provide operating voltage for the first RF switch, the second RF switch and the device under test.

[0018] Furthermore, the signal path module further includes a first power divider and a second power divider, and the parameter characterization module further includes a power meter and an oscilloscope;

[0019] The first power divider is connected to the first bidirectional coupler, the power meter and the oscilloscope respectively, and the second power divider is connected to the third bidirectional coupler, the power meter and the oscilloscope respectively;

[0020] The first power divider is used to divide the pulse signal received from the first bidirectional coupler into two equally divided signals, and input the two equally divided signals into the power meter and the oscilloscope respectively;

[0021] The second power divider is used to divide the pulse signal received from the third bidirectional coupler into equal parts, and input the two equally divided signals into the power meter and the oscilloscope respectively;

[0022] The power meter is used to monitor the power of one signal output by the first power divider and one signal output by the second power divider respectively;

[0023] The oscilloscope is used to perform time domain waveform monitoring on another signal output by the first power divider and another signal output by the second power divider respectively.

[0024] In a second aspect, the present invention provides a high-power microwave stress testing method, the method being applied to the system as described above, comprising:

[0025] According to the failure threshold to be tested, a corresponding stress test type is selected, and corresponding test parameters are set. The failure threshold includes a stress cumulative damage failure threshold and a thermal cumulative damage failure threshold. The stress test type includes a single pulse stress test and a multi-pulse stress test. The test parameters include an input parameter range and an input parameter step size.

[0026] According to the stress test type, the input parameters of the pulse signal are set according to the corresponding input parameter range, and the pulse signal is input into the device under test to perform a pulse stress test to determine whether there is a failure point. If not, the input parameters of the pulse signal are updated according to the input parameter step length, and the pulse signal is input into the device under test to perform the next pulse stress test until an iteration stop condition is reached, wherein the iteration stop condition includes the existence of a failure point or the input parameter exceeds the input parameter range;

[0027] In response to the existence of a failure point, a corresponding failure threshold is determined according to the failure point.

[0028] Furthermore, the step of inputting the pulse signal into the device under test to perform a pulse stress test and determining whether there is a failure point includes:

[0029] Inputting a pulse signal into the device under test through a stress test signal channel to perform a pulse stress test until the number of tests reaches a preset test threshold and the signal input is stopped;

[0030] Generate an analog working signal, and input the analog working signal into the device under test through an analog test signal channel to perform parameter characterization to obtain a first scattering parameter of the device under test;

[0031] It is determined whether a failure point exists according to the first scattering parameter. If not, the next pulse stress test and parameter characterization are performed until the failure point is found or the number of characterizations reaches a preset characterization threshold.

[0032] Further, the step of determining whether there is a failure point according to the first scattering parameter includes:

[0033] De-embedding the first scattering parameter according to a preset second scattering parameter, wherein the second scattering parameter is a scattering parameter obtained by replacing the device under test with a background microstrip line, generating a simulated working signal, and inputting the background microstrip line through a simulated test signal channel for parameter characterization;

[0034] A stability coefficient is calculated according to the de-embedded first scattering parameter, and whether a failure point exists is determined according to the stability coefficient.

[0035] Furthermore, the first scattering parameter of the de-embedded image is expressed by the following formula:

[0036] S ij (f) = S ij-DUT (f)-S ij-ML (f) i = 1, 2; j = 1, 2;

[0037] In the formula, S ij (f) represents the first scattering parameter of the de-embedded at frequency f, S ij-DUT(f) represents the first scattering parameter at frequency f, S ij-ML (f) represents the second scattering parameter at frequency f;

[0038] The stability coefficient is expressed by the following formula:

[0039]

[0040] Where K(f) represents the stability coefficient at frequency f.

[0041] Further, the step of setting the input parameters of the pulse signal according to the corresponding input parameter range according to the stress test type, inputting the pulse signal into the device under test, performing the pulse stress test, determining whether there is a failure point, and if not, updating the input parameters of the pulse signal according to the input parameter step length, and inputting the pulse signal into the device under test, performing the next pulse stress test, until the iteration stop condition is reached includes:

[0042] In response to the stress test type being a single pulse stress test, the input parameter range includes a start power and an end power, and the input parameter step includes a power step;

[0043] Taking the starting power as the input power of the device under test, a single pulse signal is input into the device under test to perform a pulse stress test to determine whether there is a failure point;

[0044] If it does not exist, the input power is updated with the power step as the increment, and according to the updated input power, a single pulse signal is input into the device under test for the next pulse stress test until the stress accumulation damage failure threshold is found, or the updated input power is greater than the termination power.

[0045] Further, the step of setting the input parameters of the pulse signal according to the corresponding input parameter range according to the stress test type, inputting the pulse signal into the device under test, performing the pulse stress test, determining whether there is a failure point, and if not, updating the input parameters of the pulse signal according to the input parameter step length, and inputting the pulse signal into the device under test, performing the next pulse stress test, until the iteration stop condition is reached includes:

[0046] In response to the stress test type being a multi-pulse stress test, the input parameter range includes a start power, an end power, a start pulse number, and an end pulse number, and the input parameter step includes a power step and a pulse number step;

[0047] Taking the starting power as the input power of the device under test and the starting pulse number as the pulse input number, a multi-pulse signal is input into the device under test to perform a pulse stress test to determine whether there is a failure point;

[0048] If it does not exist, the number of pulse inputs is updated with the pulse number step as the increment, and according to the updated number of pulse inputs, the multi-pulse signal is input into the device under test for the next pulse stress test until the thermal cumulative damage failure threshold is found, or the updated number of pulse inputs is greater than the number of termination pulses;

[0049] When the updated pulse input number is greater than the end pulse number, the input power is updated with the power step length as the increment, and the pulse input number is updated to the start pulse number;

[0050] According to the updated input power and the updated number of pulse inputs, the multi-pulse signal is input into the device under test for the next pulse stress test until the thermal accumulation damage failure threshold is obtained or the updated input power is greater than the termination power.

[0051] The present invention provides a high-power microwave stress test system and method. The present invention can meet the test requirements of narrow-spectrum high-power microwave pulse injection under different conditions by performing synchronous tests on stress test and parameter characterization of narrow-spectrum high-power microwave pulses. By introducing the de-embedding concept, the accuracy of stress test results can be improved, thereby providing data support for reverse guidance of product device design and reinforcement protection of key sensitive parts of the system, further improving product reliability. BRIEF DESCRIPTION OF THE DRAWINGS

[0052] Figure 1 It is a structural schematic diagram of a high-power microwave stress testing system in an embodiment of the present invention;

[0053] Figure 2 is a schematic diagram of three basic high-power microwave stresses in an embodiment of the present invention;

[0054] Figure 3 is a structural schematic diagram of a conventional high-power microwave injection test system in an embodiment of the present invention;

[0055] Figure 4 Another structural schematic diagram of a high-power microwave stress testing system according to an embodiment of the present invention;

[0056] Figure 5 It is a schematic flow chart of a stress testing method of a high-power microwave according to an embodiment of the present invention;

[0057] Figure 6 is a schematic diagram of the basic process of pulse stress testing in an embodiment of the present invention;

[0058] Figure 7 yes Figure 1 Schematic diagram of the process of single pulse stress test;

[0059] Figure 8 yes Figure 1Schematic diagram of the process of multi-pulse stress testing. DETAILED DESCRIPTION

[0060] In order to make the purpose, technical solution and advantages of the embodiments of the present invention clearer, the technical solution in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0061] See also Figure 1 A high-power microwave stress testing system proposed in the first embodiment of the present invention includes a test control module 10, and a stress test module 20, a signal path module 30 and a parameter characterization module 40 connected to the test control module 10, and the signal path module 30 is connected to the stress test module 20 and the parameter characterization module 40 respectively.

[0062] Before describing the stress testing system of high-power microwave provided by the present invention, the existing stress testing method is briefly described first. The damage effect of narrow-spectrum high-power microwave pulses on devices is mainly divided into three main types, including long pulse effect, single pulse effect and continuous pulse effect. The schematic diagrams of these three stresses are shown in FIG. Figure 2 As shown, Figure 2 (a) is a schematic diagram of a long pulse. Figure 2 (b) is a schematic diagram of a single pulse. Figure 2 (c) is a schematic diagram of multiple pulses. Specifically, a long pulse refers to a pulse with a pulse length of the order of s, usually a few seconds to tens of seconds, and a duty cycle η≈1; a single pulse refers to a pulse with a pulse length of the order of tens of ns-ms, and a duty cycle η<<1; multiple pulses are a series of pulse signals with a certain duty cycle, and their pulse width is usually in the order of tens of ns-ms. For the above three effects, long pulse and single pulse effects can be classified as the first category; multiple pulse input effects belong to the second category.

[0063] Existing input tests for high-power microwave two-port devices are as follows: Figure 3As shown in (a) (typical frequency is 300MHz-18GHz). For traditional high-power microwave testing, the high-power microwave pulse source signal is amplified by a solid-state power amplifier and input into the device under test; after a certain attenuation at the incident end of the coupler, the waveform and power of the high-power microwave stress are monitored using an oscilloscope, and after adding an attenuator to the output end of the coupler, the spectrum information of the output signal is observed using a spectrum analyzer. By analyzing the spectrum distribution, the status information of the device under test is obtained. After the above high-power microwave stress test process, the electrical parameter characterization of the device after stress requires the device to be removed and placed at both ends of a network parameter analyzer, such as Figure 3 (b) shows that only when a DC power supply is used to power it can the change of the scattering parameters (S parameters) of the two-port device be characterized. Therefore, the traditional test method requires manual control of stress input throughout the process, and the device effect, monitoring and characterization experimental platforms are separated. The position of the sample to be tested needs to be adjusted continuously, which consumes a lot of time and labor costs. Based on this, the present invention provides a new test system and test method to achieve faster and more efficient high-power microwave stress testing and device parameter characterization.

[0064] like Figure 1 As shown, the stress test system provided by the present invention is divided into four modules, wherein the stress test module 20 is used to generate a pulse signal of a high-power microwave according to a first control instruction from the test control module 10, and input the pulse signal into the signal path module 30; the signal path module 30 is used to conduct the corresponding signal channel according to a second control instruction from the test control module 10, so as to realize time-division multiplexing of the signal channel; the parameter characterization module 40 is used to generate an analog working signal of the device under test according to a third control instruction from the test control module 10, and perform signal characterization on the device under test; the test control module 10 is used to generate control instructions for each module, and perform failure point determination on the characterization signal from the parameter characterization module 40, so as to realize stress testing of high-power microwaves. The structure and function of each module are described below.

[0065] Please refer to 4. In this embodiment, the stress test module 20 includes a function generator, a signal source, a power amplifier and a circulator connected in sequence, wherein the function generator and the signal source are connected to the test control module 10 and controlled by it. Specifically, the function generator is used to generate a pulse signal with a certain repetition frequency, adjustable rising and falling edge time and duty cycle, and the number of pulses can be controlled according to actual needs; the signal source can generate a high-frequency continuous sine wave signal with an extremely narrow spectrum distribution range, which is modulated with the repetition frequency signal of the function generator to output a narrow-spectrum high-power microwave pulse signal required for the test; the power amplifier is used to proportionally amplify the narrow-spectrum high-power microwave pulse generated by the modulation; the circulator has the characteristics of low insertion loss and high reverse isolation, and is used to prevent the reflected power from being reversely coupled into the output end of the power amplifier and causing irreversible damage to it. In addition, an absorption load is also provided on the circulator, and the absorption load is used to absorb the reflected power and convert it into heat energy dissipation.

[0066] The signal path module 30 includes a first bidirectional coupler, a second bidirectional coupler, a third bidirectional coupler, a first radio frequency switch, a second radio frequency switch and a single chip microcomputer, wherein the input end of the first bidirectional coupler is connected to the output end of the circulator, the coupling end is connected to the input end of the first radio frequency switch, and the output end is connected to the input end of the device under test; the input end of the second bidirectional coupler is connected to the output end of the device under test, the coupling end is interconnected with the second radio frequency switch, the isolation end is connected to a 50Ω matching load, and the output end is connected to the input end of the third bidirectional coupler; the isolation end and the output end of the third bidirectional coupler are respectively connected to a 50Ω matching load; The first channels of the first RF switch and the second RF switch are both connected to the parameter characterization module 40, and the second channels are both connected to the 50Ω matching load. Specifically, the first channels are both connected to the vector network analyzer in the parameter characterization module 40, and the channels of the two RF switches are controlled by a single-chip microcomputer; the single-chip microcomputer can generate low-level and high-level signals sufficient to turn off or on the RF switch, and control the on and off of the RF switch. When the RF switch pin receives a high-level signal higher than 3.3V, the first channel of the RF switch is turned on; when receiving a low-level signal lower than 3.3V, the second channel of the RF switch is turned on.

[0067] According to the above connection relationship, the signal path module 30 in this embodiment actually includes two signal channels, namely a stress test signal channel and an analog test signal channel, wherein the stress test signal channel is composed of a first bidirectional coupler, a second bidirectional coupler, and a third bidirectional coupler, and is used to input the pulse signal generated by the stress test module 20 into the device under test to achieve a pulse stress test, and the analog test signal channel is composed of the first RF switch, the second RF switch, the first bidirectional coupler, and the second bidirectional coupler, and is used to input the analog working signal generated by the parameter characterization module 40 into the device under test to achieve the characterization of S parameters.

[0068] Since active devices are more vulnerable to the directed energy attack of high-power microwaves than passive devices, it is more representative to study active devices. Therefore, in this embodiment, the device to be tested is a two-port active RF front-end device, and typical devices include a low-noise amplifier and a power amplifier. At the same time, in order to avoid crossing and entanglement between wires to the greatest extent, thereby reducing signal interference and noise signals introduced by mutual inductance and crosstalk of wires at high frequencies, the signal path module 30 is integrated in the test box, and there are connection interfaces and identifications of other modules on the outside of the test box to ensure the correctness of the line connection.

[0069] In this embodiment, the parameter characterization module 40 includes a vector network analyzer and a DC power supply, wherein the vector network analyzer is respectively connected to the first RF switch, the second RF switch, the DC power supply and the test control module, and the DC power supply is respectively connected to the first RF switch, the second RF switch, the device under test and the test control module. The vector network analyzer is used to generate an analog working signal to characterize the S parameters of the device under test, so as to understand the changes in device performance indicators before and after the test; the DC power supply is used to provide working voltage for the first RF switch, the second RF switch and the device under test, and can also monitor the working current in real time.

[0070] The test control module 10 can be understood as a computer control system, which is used to control the instruments in each module. The test control module 10 establishes communication with the function generator, signal source, DC power supply and vector network analyzer through the network port, and exchanges information with the microcontroller through the UART serial port; the test control module 10 can also store and process the data collected by each instrument to realize high-power microwave stress testing. The specific processing process will be described in detail in the subsequent methods.

[0071] In a preferred embodiment, the signal path module 30 also includes a first power divider and a second power divider, and the parameter characterization module 40 also includes a power meter and an oscilloscope, wherein the first power divider is respectively connected to the first bidirectional coupler, the power meter and the oscilloscope, and the second power divider is respectively connected to the third bidirectional coupler, the power meter and the oscilloscope. Specifically, the first power divider is connected to the isolation end of the first bidirectional coupler, and the second power divider is connected to the coupling end of the third bidirectional coupler. The first power divider and the second power divider respectively divide the received signal into two signal channels, one channel is observed through the oscilloscope to observe the time domain waveform, and the other channel is tested by the power meter to test the power size. By monitoring the waveform and power, it is determined whether the settings of the stress test system are correct, thereby ensuring the accurate execution of the stress test.

[0072] See also Figure 5 Based on the above stress testing system, the present invention provides a high-power microwave stress testing method, including steps S10 to S30:

[0073] Step S10, according to the failure threshold to be tested, select the corresponding stress test type and set the corresponding test parameters, the failure threshold includes the stress cumulative damage failure threshold and the thermal cumulative damage failure threshold, the stress test type includes the single pulse stress test and the multi-pulse stress test, and the test parameters include the input parameter range and the input parameter step size;

[0074] Step S20, according to the stress test type, the input parameters of the pulse signal are set according to the corresponding input parameter range, and the pulse signal is input into the device under test to perform a pulse stress test to determine whether there is a failure point. If not, the input parameters of the pulse signal are updated according to the input parameter step length, and the pulse signal is input into the device under test to perform the next pulse stress test until the iteration stop condition is reached, wherein the iteration stop condition includes the existence of a failure point or the input parameter exceeds the input parameter range;

[0075] Step S30: In response to the existence of a failure point, determining a corresponding failure threshold according to the failure point.

[0076] In this embodiment, according to the above description, it can be known that high-power microwave pulses are divided into three main types, and long pulses and single pulses can be classified into one category, and multi-pulses can be classified into another category. Based on the two different pulse types, in this embodiment, the stress test type is divided into a single-pulse stress test and a multi-pulse stress test. The single-pulse stress test can capture the failure threshold of the device caused by the stress accumulation damage caused by the single-pulse stress to the device, and the multi-pulse stress test can capture the failure threshold of the device caused by the thermal accumulation damage caused by the multi-pulse to the device.

[0077] The difference between the two tests lies in the different input parameters of the pulse signal input to the device under test and the steps of iterative testing based on the input parameters. The similarity between the two tests lies in that during the test process, the pulse signal is input to the device under test, the pulse stress test is performed, and the steps of determining whether there is a failure point are the same, that is, the basic process of the pulse stress test is adopted. In a preferred embodiment, the specific steps of the basic process of the pulse stress test include:

[0078] Inputting a pulse signal into the device under test through a stress test signal channel to perform a pulse stress test until the number of tests reaches a preset test threshold and the signal input is stopped;

[0079] Generate an analog working signal, and input the analog working signal into the device under test through an analog test signal channel to perform parameter characterization to obtain a first scattering parameter of the device under test;

[0080] It is determined whether a failure point exists according to the first scattering parameter. If not, the next pulse stress test and parameter characterization are performed until the failure point is found or the number of characterizations reaches a preset characterization threshold.

[0081] In this embodiment, based on the above system, it can be seen that two modes of testing can be implemented through the test system, namely, a stress test mode and a characterization test mode. Figure 6 As shown, the stress test mode refers to turning on the second channels of the first RF switch and the second RF switch, conducting the stress test signal channel, and generating a pulse signal from the function generator, which is modulated with the sine wave generated by the signal source. The modulated narrow spectrum high-power pulse signal is amplified by the power amplifier, passes through the incident end of the first bidirectional coupler, and the signal after the interaction with the device under test enters the second bidirectional coupler and the third bidirectional coupler successively.

[0082] In addition, preferably, the system can be judged whether it is normal by whether the oscilloscope and the power meter are triggered. If the oscilloscope and the power meter do not capture the relevant information of the current pulse, it means that the trigger threshold of the oscilloscope or the power meter is set incorrectly, the experiment cannot continue, the program is terminated, and the correct parameters need to be reset. If the oscilloscope and the power meter are both triggered, the experiment proceeds normally, and the DC power supply current value and the oscilloscope and power meter trigger data are stored to facilitate subsequent other data analysis.

[0083] The characterization test mode refers to turning on the first channels of the first RF switch and the second RF switch, and turning on the analog test signal channel. At this time, the high-power microwave stress test is completed, and the narrow-spectrum high-power microwave pulse signal is no longer generated by the signal source. The analog working signal emitted by the vector network analyzer is coupled to the device port through the first channels of the first and second RF switches and the reflection ports of the first and second bidirectional couplers to realize the characterization of the S parameters of the device under test after the high-power microwave pulse input, thereby realizing time-division multiplexing of different signal channels. For the S parameters obtained by the characterization, the preset algorithm is used for data processing and failure point determination.

[0084] In this embodiment, the basic process of the pulse stress test is obtained by combining the above two modes. Assuming that the number of tests in the stress test mode is G times and the number of characterizations in the characterization test mode is C times, the basic process of the pulse stress test can be described as: after each C stress test, a parameter characterization is performed. After performing a parameter characterization, the S parameters obtained by the characterization are processed by the test control module to determine whether the device under test fails after the G stress tests. If the failure point is not found, after the characterization process is completed, the stress test and the characterization test are performed again to continue to find the failure point. If the failure point is found, the pulse stress test is stopped. Otherwise, the iterative operation is continued until the stress test is performed G×C times. At this time, the characterization results of the device parameters after C, 2C, 3C...GC stress tests are obtained, thereby completing the basic process of the pulse test.

[0085] In this embodiment, the failure point of the device under test is determined according to the stability coefficient, that is, the S parameters of the device under test are obtained through parameter characterization, and the stability coefficient K(f) at the scanning frequency set by the vector network analyzer is calculated. If K(f)>1, it means that at this frequency point f, the high-power microwave pulse stress to the device under test does not have a significant impact on the stability of the device under test; if K(f)<1, it means that the high-power microwave pulse stress has caused an irreversible impact on the device, thereby causing the device to be in an unstable working state at the frequency point f, that is, the device is considered to have failed, and the failure point refers to the number of pulses of the input pulse signal that causes the device to fail. According to the monitoring data of instruments such as the vector network analyzer, the number of pulses that cause the device to fail under the condition of the input power value at the frequency point f can be obtained, and the power value and the number of pulses of the input pulse signal that cause the device to fail are used as the failure threshold.

[0086] In the actual test process, due to the influence of noise, the characterized S parameters contain noise information and have errors. In order to eliminate the errors introduced by the signal loop and obtain the real frequency domain parameters of the device, in a preferred embodiment, before calculating the stability coefficient of the scattering parameters, the present invention first deembeds the scattering parameters to obtain more accurate scattering parameters, thereby improving the accuracy of the calculated stability coefficient. The specific steps include:

[0087] De-embedding the first scattering parameter according to a preset second scattering parameter, wherein the second scattering parameter is a scattering parameter obtained by replacing the device under test with a background microstrip line, generating a simulated working signal, and inputting the background microstrip line through a simulated test signal channel for parameter characterization;

[0088] A stability coefficient is calculated according to the de-embedded first scattering parameter, and whether a failure point exists is determined according to the stability coefficient.

[0089] In this embodiment, the de-embedding operation is performed based on the second scattering parameter, which is an S parameter obtained by replacing the device under test with a background microstrip line and inputting an analog working signal for parameter characterization before the test starts. Specifically, before the test starts, the first and second RF switches are first placed in the first channel, the background microstrip line of the active two-port device under test is placed at the position of the device under test, and the S parameters of the background microstrip line are characterized by a vector network analyzer, and the obtained S parameters are recorded as S ML (f) After the stress test, the S parameters of the device under test are characterized and the obtained S parameters are recorded as S DUT (f) Since the paths of the analog working signals before and after the test are consistent, the errors introduced into the test are also consistent, and the microstrip line is the background of the device under test, the error introduced by the signal loop can be eliminated by de-embedding operation to obtain the true frequency domain parameters of the device. The de-embedding formula is expressed as:

[0090] S(f)=S DUT (f)-S ML (f)

[0091] Since the S parameters obtained by characterization include S 11 , S 12 , S 21 , S 22 , so the de-embedding formula can be expanded as:

[0092] S ij (f) = S ij-DUT (f)-S ij-ML (f) i = 1, 2; j = 1, 2;

[0093] That is:

[0094] S 11 (f) = S 11-DUT (f)-S 11-ML (f)

[0095] S 12 (f) = S 12-DUT (f)-S 12-ML (f)

[0096] S 21 (f) = S 21-DUT (f)-S 21-ML (f)

[0097] S 22 (f) = S 22-DUT (f)-S 22-ML (f)

[0098] Then, the stability coefficient is calculated based on the de-embedded S parameters. The specific calculation formula is:

[0099]

[0100] The stability coefficient is calculated according to the above formula, and the frequency point causing device failure is found by comparing the stability coefficient with the coefficient threshold. Then, the failure threshold causing device failure, that is, the power value and number of pulses of the input pulse signal, can be accurately captured.

[0101] On the basis of the basic flow of pulse test, based on the difference of narrow spectrum high power microwave pulse stress, the test steps for single pulse stress test and multi-pulse stress test in this embodiment are also different. Among them, for single pulse stress test, the specific test steps include:

[0102] In response to the stress test type being a single pulse stress test, the input parameter range includes a start power and an end power, and the input parameter step includes a power step;

[0103] Taking the starting power as the input power of the device under test, a single pulse signal is input into the device under test to perform a pulse stress test to determine whether there is a failure point;

[0104] If it does not exist, the input power is updated with the power step as the increment, and according to the updated input power, a single pulse signal is input into the device under test for the next pulse stress test until the stress accumulation damage failure threshold is found, or the updated input power is greater than the termination power.

[0105] In this embodiment, since the input is a single pulse signal, it is only necessary to set the starting power, ending power and power step of the device under test. Figure 7 , the starting power is represented by P B1 , the termination power is denoted as P E1 , the power step is denoted as P S1 , the input power of the device under test is expressed as P, then the process of single pulse stress test can be expressed as (P = P B1 ; P≤P E1 ; P=P+P S1 ) is the iterative loop condition, and the basic process of the pulse stress test is iterated until the failure point is found, or the iterative loop condition is false.

[0106] If a failure point is found, it means that a certain number of pulses under the power value will cause the device to fail. At this time, the device needs to be replaced, and the sum of the current power value and the power step length is used as the new starting power, and the single pulse stress test is repeated to find the failure point under other power value conditions; if the failure point is not found within the start and end power range, the sum of the current end power and the power step length is used as the new starting power, and the next round of testing is repeated until the power value and number of pulses that can cause device failure are found. It should be noted that the processing steps for finding the failure point or not finding the failure point under the current input parameter conditions in the multi-pulse stress test are the same as those for the single pulse stress test, and will not be repeated later.

[0107] The following is an example of the steps of the single pulse stress test. The BGA2869 low noise amplifier of the microwave monolithic integrated circuit (MMIC) is used as the device to be tested. The operating frequency of the device is DC-2.2GHz, the maximum power rating allowed for input is 10dBm, and the normal operating voltage is 9V-12V. Taking the in-band damage effect study of the device as an example, the signal source frequency is set to f0 = 500MHz, the function generator repetition frequency f1 = 125Hz), and the duty cycle DC = 50%. Before the test begins, a background microstrip line with the same thickness and impedance of the device transmission path is placed at the position of the device to be tested, and the sweep frequency range is set to DC-2.2GHz. The S parameters are tested and saved.

[0108] For the single pulse stress test of the device under test, we need to determine how many long pulses there are and the irreversible permanent damage to the device after a single pulse, that is, the stress cumulative damage failure threshold. In the single pulse stress test, the default output pulse number N = 1 after the function generator is triggered, and the starting power P of the signal source input is set. B1 =-4.5dBm, the corresponding power amplifier output power is 36.97dBm, the signal source input termination power P E1 =-3.5dBm, the corresponding power amplifier output power is 37.71dBm, the power step length is P S1 =0.1dBm, the number of stress tests in the basic process of pulse test G=1, and the number of characterization tests C=5000.

[0109] It should be noted here that the input power value condition that causes device failure is actually the power value output by the signal source after the power amplifier. For the convenience of description, in this embodiment and the subsequent multi-pulse stress test, the power value output by the input power of the signal source after the power amplifier is used as the starting power P B1 and termination power P E1 , the single pulse stress test step is to increase the input power of the device under test from P B1 Start with PS1 The step length is gradually increased to P E1 Approximation, after each input, the basic process of pulse stress test is executed until the failure point is found or the input power of the device under test is greater than P E1 , the test termination condition is reached, and the injection power and number of pulses that cause device failure are found through analysis of S parameters, so that the pulse threshold of single pulse stress on device stress cumulative damage can be accurately captured. Taking the above-mentioned device under test as an example, through single pulse stress test, it can be obtained that under the condition of power value of 37.07dBm, it fails after 2947 single pulses; under the condition of power value of 37.21dBm, it fails after 50 single pulses; under the condition of power value of 37.43dBm, it fails after 1 single pulse.

[0110] In this embodiment, for the multi-pulse stress test, the specific test steps include:

[0111] In response to the stress test type being a multi-pulse stress test, the input parameter range includes a start power, an end power, a start pulse number, and an end pulse number, and the input parameter step includes a power step and a pulse number step;

[0112] Taking the starting power as the input power of the device under test and the starting pulse number as the pulse input number, a multi-pulse signal is input into the device under test to perform a pulse stress test to determine whether there is a failure point;

[0113] If it does not exist, the number of pulse inputs is updated with the pulse number step as the increment, and according to the updated number of pulse inputs, the multi-pulse signal is input into the device under test for the next pulse stress test until the thermal cumulative damage failure threshold is found, or the updated number of pulse inputs is greater than the number of termination pulses;

[0114] When the updated pulse input number is greater than the end pulse number, the input power is updated with the power step length as the increment, and the pulse input number is updated to the start pulse number;

[0115] According to the updated input power and the updated number of pulse inputs, the multi-pulse signal is input into the device under test for the next pulse stress test until the thermal accumulation damage failure threshold is obtained or the updated input power is greater than the termination power.

[0116] In this embodiment, for the multi-pulse stress test, what needs to be found is at which pulse and at what power the device has an irreparable impact, resulting in a change in electrical parameters. Since the input is a multi-pulse signal, compared with the single-pulse stress test, in addition to setting the starting power, ending power and power step, the multi-pulse stress test also needs to set the starting pulse number, ending pulse number and pulse number step. Since there is an additional input condition of the number of pulses, at this time, the iterative step of the multi-pulse stress test will have an additional cyclic condition of the number of pulses compared to the iterative step of the single-pulse stress test.

[0117] In this embodiment, the cycle condition of the number of pulses is used as the inner cycle condition, and the cycle condition of the power is used as the outer cycle condition to perform the iteration operation of the basic process of the pulse stress test. Figure 8 , the starting power is represented by P B2 , the termination power is denoted as P E2 , the power step is denoted as P S2 , the number of starting pulses is expressed as N B , the number of termination pulses is expressed as N E , the pulse number step is expressed as Step, the input power of the device under test is expressed as P, and the number of input pulses of the device under test is expressed as N. The process of multi-pulse stress test can be expressed as (N = N B ; N≤N E ; N = N + Step) is the inner iteration loop condition, with (P = P B2 ; P≤P E2 ; P=P+P S2 ) is the outer iteration loop condition, and the basic process of the pulse stress test is iterated until the failure point is found, or the iteration loop condition is false.

[0118] Taking the device under test in the single pulse stress test as an example, for the multi-pulse stress test of the device, set the stress test number G=1 and the characterization test number C=1 in the basic process of the pulse test; set the starting power P of the signal source input B2 =-8dBm, the corresponding power amplifier output power is 34.37dBm, the signal source input termination power P E2 =-7dBm, the corresponding power amplifier output power is 35.24dBm, the power step length is P S2 =0.1dBm, number of starting pulses N B =5, the number of termination pulses N E =1000, pulse number step Step=5.

[0119] The multi-pulse stress test procedure is to input power P B2 Under the condition, N is injected into the device under test. BPulses, N S The number of pulses is incremented by the step size. After each injection of the multi-pulse signal, the basic process of the pulse stress test is executed until the failure point is found or the number of pulses is greater than N. E , when no failure point is found under this power value, P S2 The step size is used to update the input power and the number of input pulses is updated to the initial number of starting pulses N. B , continue to execute the next loop operation until the failure point is found or the test termination condition is reached.

[0120] By analyzing the S parameters, we can find the injection power and number of continuous pulses that cause device failure, and accurately capture the threshold point of thermal cumulative damage failure caused by multi-pulse stress. Taking the above-mentioned device under test as an example, through multi-pulse stress testing, it can be found that under the condition of a power value of 34.44dBm, it fails after 560 continuous pulses; under the condition of a power value of 34.67dBm, it fails after 220 continuous pulses; under the condition of a power value of 34.86dBm, it fails after 125 continuous pulses.

[0121] It should be noted that in order to eliminate the influence of the cumulative effect of the device in repeated high-power microwave tests and further detect the accurate threshold point of device failure, it is possible to repeatedly replace new identical devices for testing near the failure threshold point analyzed from the instrument monitoring data to ensure that the accurate failure threshold of this type of device is obtained.

[0122] In addition, in a preferred embodiment, the determination of the failure point, i.e., the calculation of the stability coefficient of the S parameter, can be set after all the iteration cycles are completed, i.e., in the basic process of the pulse stress test, the determination of the failure point is removed, and after the iteration steps of the single pulse stress test or the multi-pulse stress test are completed, all the parameter characterization results are stored, and the failure threshold of the device is found through data backtracking. Alternatively, the step of determining the failure point is set after the parameter characterization for several times, which is also included in the stress test method of this embodiment, i.e., the order of steps described in this embodiment is only preferred and not specifically limited. The test steps of the stress test provided in this embodiment can be adaptively adjusted according to actual conditions, and the adjustment of the order of steps does not affect the results of the stress test.

[0123] A high-power microwave stress testing method provided in this embodiment meets the test requirements of narrow-spectrum high-power microwave pulse injection under different conditions by synchronously testing the stress test and parameter characterization of narrow-spectrum high-power microwave pulses. By introducing the de-embedding concept, the accuracy of the test parameters is improved, and the quantitative analysis of the state of the device to be tested is realized, thereby improving the accuracy of the stress test results, providing data support for reverse guidance of product device design and reinforcement protection of key sensitive parts of the system, and further improving the reliability of the product.

[0124] In summary, an embodiment of the present invention proposes a stress test system and method for high-power microwaves, the system comprising a test control module, and a stress test module, a signal path module and a parameter characterization module connected to the test control module, the signal path module being connected to the stress test module and the parameter characterization module respectively; the stress test module is used to generate a pulse signal of a high-power microwave according to a first control instruction from the test control module, and input the pulse signal to the signal path module; the signal path module is used to conduct the corresponding signal channel according to a second control instruction from the test control module to realize time-division multiplexing of the signal channel, the signal channel comprising a stress test signal channel and a simulation test signal channel; wherein the signal path module comprises a first bidirectional coupler, a second bidirectional coupler, a third bidirectional coupler, a first radio frequency switch, a second radio frequency switch and a single-chip microcomputer, the first bidirectional coupler being connected to the stress test module and the first radio frequency switch respectively, the second bidirectional coupler being connected to the third bidirectional coupler, a device to be tested being connected between the first bidirectional coupler and the second bidirectional coupler, the first radio frequency switch The first and second RF switches are connected to the parameter characterization module and the single-chip microcomputer, and the single-chip microcomputer is connected to the test control module; the stress test signal channel is composed of the first bidirectional coupler, the second bidirectional coupler, and the third bidirectional coupler, and the analog test signal channel is composed of the first RF switch, the second RF switch, the first bidirectional coupler, and the second bidirectional coupler. The conduction of the analog test signal channel is controlled by the selection signal generated by the single-chip microcomputer according to the second control instruction; the parameter characterization module is used to generate the analog working signal of the device under test according to the third control instruction from the test control module, and input the first RF switch and the second RF switch respectively, and perform signal characterization on the device under test, and input the obtained characterization signal into the test control module; the test control module is used to generate control instructions for the stress test module, the signal path module, and the parameter characterization module, and the control instructions include the first control instruction, the second control instruction, and the third control instruction, and perform failure point judgment on the received characterization signal to realize stress testing of high-power microwaves. The present invention meets the test requirements of narrow-spectrum high-power microwave pulse injection under different conditions by conducting simultaneous tests on stress testing and parameter characterization of narrow-spectrum high-power microwave pulses. By introducing the de-embedding concept, the accuracy of test parameters is improved, and quantitative analysis of the state of the device to be tested is realized, thereby improving the accuracy of the stress test results. It provides data support for reverse guidance of product device design and reinforcement protection of key sensitive parts of the system, and further improves the reliability of the product.

[0125] Each embodiment in this specification is described in a progressive manner, and the same or similar parts of each embodiment can be directly referred to each other, and each embodiment focuses on the differences from other embodiments. In particular, for the system embodiment, since it is basically similar to the method embodiment, the description is relatively simple, and the relevant parts can be referred to the partial description of the method embodiment. It should be noted that the technical features of the above-mentioned embodiments can be combined arbitrarily. In order to make the description concise, all possible combinations of the technical features in the above-mentioned embodiments are not described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0126] The above-mentioned embodiments only express several preferred implementation modes of the present application, and the descriptions thereof are relatively specific and detailed, but they cannot be understood as limiting the scope of the invention patent. It should be pointed out that, for ordinary technicians in the technical field, several improvements and substitutions can be made without departing from the technical principles of the present invention, and these improvements and substitutions should also be regarded as the protection scope of the present application. Therefore, the protection scope of the patent of the present application shall be based on the protection scope of the claims.

Claims

1. A high power microwave stress testing system, characterized in that: include: A test control module, and a stress test module, a signal path module and a parameter characterization module connected to the test control module, wherein the signal path module is connected to the stress test module and the parameter characterization module respectively; The stress test module is used to generate a high-power microwave pulse signal according to a first control instruction from the test control module, and input the pulse signal into the signal path module; The signal path module is used to conduct the corresponding signal channel according to the second control instruction from the test control module to achieve time-division multiplexing of the signal channel, and the signal channel includes a stress test signal channel and a simulation test signal channel; Wherein, the signal path module includes a first bidirectional coupler, a second bidirectional coupler, a third bidirectional coupler, a first radio frequency switch, a second radio frequency switch and a single-chip microcomputer, the first bidirectional coupler is connected to the stress test module and the first radio frequency switch respectively, the second bidirectional coupler is connected to the third bidirectional coupler, a device to be tested is connected between the first bidirectional coupler and the second bidirectional coupler, the first radio frequency switch and the second radio frequency switch are both connected to the parameter characterization module and the single-chip microcomputer, and the single-chip microcomputer is connected to a test control module; The stress test signal channel is composed of the first bidirectional coupler, the second bidirectional coupler, and the third bidirectional coupler, the analog test signal channel is composed of the first RF switch, the second RF switch, the first bidirectional coupler, and the second bidirectional coupler, and the conduction of the analog test signal channel is controlled by the selection signal generated by the single chip microcomputer according to the second control instruction; The parameter characterization module is used to generate a simulated working signal of the device under test according to a third control instruction from the test control module, and input the analog working signal to the first radio frequency switch and the second radio frequency switch respectively, and to perform signal characterization on the device under test and input the obtained characterization signal to the test control module; The test control module is used to generate control instructions for the stress test module, the signal path module and the parameter characterization module, the control instructions include a first control instruction, a second control instruction and a third control instruction, and perform failure point determination on the received characterization signal to achieve stress testing of high-power microwaves.

2. The high-power microwave stress testing system according to claim 1, characterized in that: The stress test module comprises a function generator, a signal source, a power amplifier and a circulator which are connected in sequence. The function generator and the signal source are both connected to the test control module, and the circulator is connected to the first bidirectional coupler.

3. The high-power microwave stress testing system according to claim 1, characterized in that: The device under test is an active radio frequency front-end device; The parameter characterization module includes a vector network analyzer and a direct current power supply, the vector network analyzer is respectively connected to the first radio frequency switch, the second radio frequency switch, the direct current power supply and the test control module, and the direct current power supply is respectively connected to the first radio frequency switch, the second radio frequency switch, the device under test and the test control module; The vector network analyzer is used to generate an analog working signal of the device under test according to the third control instruction, and input the analog working signal to the first radio frequency switch and the second radio frequency switch respectively, and to perform signal characterization on the device under test, and input the obtained characterization signal to the test control module; The DC power supply is used to provide operating voltage for the first RF switch, the second RF switch and the device under test.

4. The high-power microwave stress testing system according to claim 3, characterized in that: The signal path module further includes a first power divider and a second power divider, and the parameter characterization module further includes a power meter and an oscilloscope; The first power divider is connected to the first bidirectional coupler, the power meter and the oscilloscope respectively, and the second power divider is connected to the third bidirectional coupler, the power meter and the oscilloscope respectively; The first power divider is used to divide the pulse signal received from the first bidirectional coupler into two equally divided signals, and input the two equally divided signals into the power meter and the oscilloscope respectively; The second power divider is used to divide the pulse signal received from the third bidirectional coupler into equal parts, and input the two equally divided signals into the power meter and the oscilloscope respectively; The power meter is used to monitor the power of one signal output by the first power divider and one signal output by the second power divider respectively; The oscilloscope is used to perform time domain waveform monitoring on another signal output by the first power divider and another signal output by the second power divider respectively.

5. A high power microwave stress testing method, characterized in that: The method is applied to the system according to any one of claims 1 to 4, and the method comprises: According to the failure threshold to be tested, a corresponding stress test type is selected, and corresponding test parameters are set. The failure threshold includes a stress cumulative damage failure threshold and a thermal cumulative damage failure threshold. The stress test type includes a single pulse stress test and a multi-pulse stress test. The test parameters include an input parameter range and an input parameter step size. According to the stress test type, the input parameters of the pulse signal are set according to the corresponding input parameter range, and the pulse signal is input into the device under test to perform a pulse stress test to determine whether there is a failure point. If not, the input parameters of the pulse signal are updated according to the input parameter step length, and the pulse signal is input into the device under test to perform the next pulse stress test until an iteration stop condition is reached, wherein the iteration stop condition includes the existence of a failure point or the input parameter exceeds the input parameter range; In response to the existence of a failure point, a corresponding failure threshold is determined according to the failure point.

6. The high power microwave stress testing method according to claim 5, characterized in that: The step of inputting the pulse signal into the device under test, performing the pulse stress test, and determining whether there is a failure point includes: Inputting a pulse signal into the device under test through a stress test signal channel to perform a pulse stress test until the number of tests reaches a preset test threshold and the signal input is stopped; Generate an analog working signal, and input the analog working signal into the device under test through an analog test signal channel to perform parameter characterization to obtain a first scattering parameter of the device under test; It is determined whether a failure point exists according to the first scattering parameter. If not, the next pulse stress test and parameter characterization are performed until the failure point is found or the number of characterizations reaches a preset characterization threshold.

7. The high power microwave stress testing method according to claim 6, characterized in that: The step of judging whether there is a failure point according to the first scattering parameter comprises: De-embedding the first scattering parameter according to a preset second scattering parameter, wherein the second scattering parameter is a scattering parameter obtained by replacing the device under test with a background microstrip line, generating a simulated working signal, and inputting the background microstrip line through a simulated test signal channel for parameter characterization; A stability coefficient is calculated according to the de-embedded first scattering parameter, and whether a failure point exists is determined according to the stability coefficient.

8. The high-power microwave stress testing method according to claim 7, characterized in that: The first scattering parameter of de-embedding is expressed as follows: S ij (f)=S ij-DUT (f)-S ij-ML (f)i=1,2;j=1,2; In the formula, S ij (f) represents the first scattering parameter of the de-embedded at frequency f, S ij-DUT (f) represents the first scattering parameter at frequency f, S ij-ML (f) represents the second scattering parameter at frequency f; The stability coefficient is expressed by the following formula: Where K(f) represents the stability coefficient at frequency f.

9. The high power microwave stress testing method according to claim 6, characterized in that: The step of setting the input parameters of the pulse signal according to the corresponding input parameter range according to the stress test type, inputting the pulse signal into the device under test, performing the pulse stress test, determining whether there is a failure point, and if not, updating the input parameters of the pulse signal according to the input parameter step length, and inputting the pulse signal into the device under test, performing the next pulse stress test, until the iteration stop condition is reached includes: In response to the stress test type being a single pulse stress test, the input parameter range includes a start power and an end power, and the input parameter step includes a power step; Taking the starting power as the input power of the device under test, a single pulse signal is input into the device under test to perform a pulse stress test to determine whether there is a failure point; If it does not exist, the input power is updated with the power step as the increment, and according to the updated input power, a single pulse signal is input into the device under test for the next pulse stress test until the stress accumulation damage failure threshold is found, or the updated input power is greater than the termination power.

10. The high power microwave stress testing method according to claim 6, characterized in that: The steps of setting the input parameters of the pulse signal according to the corresponding input parameter range according to the stress test type, inputting the pulse signal into the device under test, performing the pulse stress test, determining whether there is a failure point, and if not, updating the input parameters of the pulse signal according to the input parameter step length, and inputting the pulse signal into the device under test, performing the next pulse stress test, until the iteration stop condition is reached include: In response to the stress test type being a multi-pulse stress test, the input parameter range includes a start power, an end power, a start pulse number, and an end pulse number, and the input parameter step includes a power step and a pulse number step; Taking the starting power as the input power of the device under test and the starting pulse number as the pulse input number, a multi-pulse signal is input into the device under test to perform a pulse stress test to determine whether there is a failure point; If it does not exist, the number of pulse inputs is updated with the pulse number step as the increment, and according to the updated number of pulse inputs, the multi-pulse signal is input into the device under test for the next pulse stress test until the thermal cumulative damage failure threshold is found, or the updated number of pulse inputs is greater than the number of termination pulses; When the updated pulse input number is greater than the end pulse number, the input power is updated with the power step length as the increment, and the pulse input number is updated to the start pulse number; According to the updated input power and the updated number of pulse inputs, the multi-pulse signal is input into the device under test for the next pulse stress test until the thermal accumulation damage failure threshold is obtained or the updated input power is greater than the termination power.

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