A high-compatibility fine resist stripping liquid composition

Abstract

The application discloses a high-compatibility high-precision resist stripping liquid composition, which comprises an organic amine, a protic organic solvent, an aprotic organic solvent, an additive and a surfactant; the additive comprises an Al corrosion inhibitor, a metal potential regulator and a surface hydrophilicity improver; the resist stripping liquid composition of the application is environmentally friendly, the used organic amine has strong photoresist attack, and has good stripping performance; the combination of the protic organic solvent and the aprotic organic solvent is beneficial to enhancing the dissolving and cleaning performance of the stripping liquid on the photoresist, reducing the precipitation of the photoresist in the stripping and water washing processes, and prolonging the service life of the liquid medicine; the three types of additives have good synergistic effect; the photoresist is not easy to adhere to the surface of a process layer such as ITO in the stripping and water washing processes; the stripping liquid has no corrosion on a Cu film layer or an Al film layer, thereby ensuring the compatibility of the stripping liquid on multiple processes such as a Cu process, an Al process and an ITO process, effectively reducing the complexity of a production line process, and reducing the production cost.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of stripping liquid production, and particularly relates to a high-compatibility high-precision resist stripping liquid composition. BACKGROUND

[0002] In the prior art, some stripping liquid formula compositions contain sulfone or sulfoxide organic solvents, which can meet stripping performance, but such solvents are prone to cause environmental pollution and do not meet environmental protection requirements. Moreover, with the development of display technology, panel manufacturing processes tend to be more precise, and the precision requirement of stripping liquid formula is also higher and higher. At present, most stripping liquids select low-pollution components, and the selection of organic amines and organic solvents has tended to be homogenized, and the difference of stripping liquid formula mainly concentrates on the selection and application of additives and surface activity. However, some additives have single performance, which may lead to the deficiency of other performances of the stripping liquid. In addition, since the application of the stripping liquid in the display panel manufacturing process is mostly in the form of spraying, the requirement standard of the dynamic surface tension of the stripping liquid is gradually improved, especially for high-generation TFT-LCD and AMOLED production lines with high precision and low line width.

[0003] In the prior art, patent CN202311113226.8 discloses a photoresist stripping device for avoiding parasitic gate effect and twill Mura, which is provided with dry interval, stripping interval, hot water washing interval, sub-cooled water washing interval and air drying interval in sequence according to the transmission direction of the substrate, however, the device is quite different from the existing production line device, and the modification will increase the equipment cost and time cost. Patent CN201580012365.9 discloses a stripping agent composition for removing photoresist and a method for stripping photoresist using the same, the stripping liquid contains triazole compounds and benzimidazole compounds, which can effectively prevent corrosion of Cu and Mo, but the stripping liquid can only be applied to Cu process, and cannot be used for Al process or ITO process, which requires different stripping liquids for different processes on the production line, and the stripping liquid process compatibility is poor, which greatly increases the complexity of the production line process. Patent CN200810092008.X discloses a photoresist stripping composition and a method for stripping a photoresist film using the same, the stripping liquid contains 0.1%-about 5% by weight of phenol ethoxy type non-ionic surfactant. Patent CN201910603572.1 discloses a high selectivity stripping liquid, which contains 0.01-5.00% by weight of surfactant, and the surfactant is a tetrasiloxane gemini surfactant containing sugar amide group. Patent CN201910061476.9 discloses a water-based photoresist stripping liquid for display panel and semiconductor field, 2%-8% by weight of gemini type alkyl glycoside surfactant, which has strong wetting and penetration properties, can effectively improve the stripping performance of the stripping liquid, and has certain corrosion resistance, forms good synergistic effect with corrosion inhibitor, and prevents corrosion of the substrate and Cu metal wiring. For the use of surfactants, although the non-ionic surfactants used in the prior art are beneficial to reduce the amount of metal ions introduced, the phenol ethoxy type non-ionic surfactant, the tetrasiloxane gemini surfactant containing sugar amide group and the gemini type alkyl glycoside surfactant have large molecular weight and are easy to foam, which will greatly reduce the stripping performance of the stripping liquid during actual use, resulting in photoresist residue; on the other hand, the large molecular weight of the surfactant may affect the hydrophilicity, which may precipitate during the water washing process at the rear end of the stripping process, and basically only reduces the static surface tension, which is difficult to meet the requirements of high-generation line TFT-LCD and AMOLED production line with high precision and low line width. SUMMARY

[0004] The purpose of the present application is to provide a high-compatibility high-precision resist stripping liquid composition to overcome the deficiencies in the prior art.

[0005] To achieve the above-mentioned purpose, the present application provides the following technical solutions:

[0006] The application discloses a high-compatibility fine resist stripping liquid composition, which comprises 2-8% by weight of an organic amine, 25-70% by weight of a protic organic solvent, 25-70% by weight of an aprotic organic solvent, 0.3-3% by weight of an additive and 0.1-0.5% by weight of a surfactant; the additive comprises 0.1-1% by weight of an Al corrosion inhibitor, 0.1-1% by weight of a metal potential regulator and 0.1-1% by weight of a surface hydrophilicity improver.

[0007] Preferably, the Al corrosion inhibitor is a hydroxyl-containing compound, and one or more of ethyl gallate, 3-tert-butyl phenol and tert-butyl catechol.

[0008] Preferably, the metal potential regulator is selected from ammonium pyrophosphate.

[0009] Preferably, the surface hydrophilicity improver is a hydroxyl-containing amino acid ammonium salt, and one or more of L-ammonium threoninate, ammonium serinate and ammonium tyrosinate.

[0010] Preferably, the organic amine is selected from one or more of methyldiethanolamine, (2-aminoethoxy)-1-ethanol, hydroxyethylethylenediamine, monoethanolamine, diethanolamine and triethanolamine.

[0011] Preferably, the protic organic solvent is selected from one or more of diethylene glycol monomethyl ether, diethylene glycol monobutyl ether, diethylene glycol monoethyl ether, diethylene glycol monopropyl ether, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monopropyl ether and ethylene glycol monobutyl ether.

[0012] Preferably, the aprotic organic solvent is selected from one or more of N-methyl formamide, N,N-dimethyl propionamide, N-ethyl formamide and N,N-diethyl formamide.

[0013] Preferably, the surfactant is an aniline polyoxyethylene ether non-ionic Gemini surfactant, and the structure is as follows: , wherein R=C1-C2, and n=4-7.

[0014] The application has the following beneficial effects:

[0015] 1. This resist stripping solution composition is environmentally friendly. The organic amines used have a strong attack effect on photoresist and good stripping performance. The combination of protic and non-protic organic solvents enhances the dissolution and cleaning performance of the stripping solution on photoresist, reduces photoresist precipitation during stripping and rinsing, and extends the service life of the solution. Moreover, the organic materials selected in this invention are easy to recycle and have a high recycling rate, which helps to reduce the cost of the stripping solution. There is a good synergistic effect among the three types of additives. During stripping and rinsing, photoresist is less likely to adhere to the surface of process layers such as ITO. The stripping solution does not corrode Cu or Al films, ensuring the compatibility of the stripping solution with multiple processes such as Cu, Al, and ITO processes. No modification to existing equipment is required, effectively reducing the complexity of the production line process and lowering production costs.

[0016] 2. The stripping solution uses a small-molecule nonionic Gemini surfactant, which does not release metal ions and effectively reduces the static and dynamic surface tension of the stripping solution. It produces fewer bubbles and has a certain defoaming effect, enhancing the photoresist removal capacity and uniformity, thus improving its precision. Furthermore, this surfactant does not precipitate during water washing, is readily biodegradable, and is more environmentally friendly. It also has a synergistic effect with third-party additives, preventing photoresist adhesion to the process layer surface. After the surfactant migrates from the bulk phase to the surface phase and establishes equilibrium, it effectively reduces surface tension and decreases the contact angle, improving wettability. This establishment process requires a certain amount of time; therefore, static surface tension cannot reflect the wettability during dynamic use. Low dynamic surface tension indicates a short equilibrium establishment time, allowing for a rapid reduction in the contact angle and improved wettability during dynamic use. Therefore, the surfactant used in this invention effectively reduces dynamic surface tension and improves wettability, meeting the requirements of high-precision processes.

[0017] The features and advantages of the present invention will be described in detail through embodiments. Detailed Implementation

[0018] To make the objectives, technical solutions, and advantages of this invention clearer, the invention will be further described in detail below through embodiments. However, it should be understood that the specific embodiments described herein are merely illustrative and not intended to limit the scope of the invention. Furthermore, descriptions of well-known structures and technologies are omitted in the following description to avoid unnecessarily obscuring the concept of the invention.

[0019] Example 1

[0020] This embodiment discloses a highly compatible fine resist stripping solution composition, comprising 3.1% by weight of an organic amine, 25.7% by weight of a protic organic solvent, 70% by weight of a non-protic organic solvent, 0.3% by weight of a surfactant; 0.2% by weight of an Al corrosion inhibitor, 0.5% by weight of a metal potential modifier, and 0.2% by weight of a surface hydrophilicity improver; wherein the Al corrosion inhibitor is ethyl gallate; the metal potential modifier is ammonium pyrophosphate; the surface hydrophilicity improver is L-threonine ammonium; the organic amine is methyl diethanolamine; the protic organic solvent is diethylene glycol monomethyl ether; the non-protic organic solvent is N-methylformamide; and the surfactant is an aniline-based polyoxyethylene ether nonionic Gemini surfactant; its structure is as follows:

[0021] , Where R = C1 - C2, n = 4 ~ 7.

[0022] Example 2

[0023] This embodiment presents a highly compatible fine resist stripping solution composition, comprising 2.0% by weight of an organic amine, 70% by weight of a protic organic solvent, 25% by weight of a non-protic organic solvent, 0.2% by weight of a surfactant; 1.0% by weight of an Al corrosion inhibitor, 0.7% by weight of a metal potential modifier, and 0.8% by weight of a surface hydrophilicity improver; wherein the Al corrosion inhibitor is 3-tert-butylphenol; the metal potential modifier is ammonium pyrophosphate; the surface hydrophilicity improver is ammonium serine; the organic amine is (2-aminoethoxy)-1-ethanol; the protic organic solvent is diethylene glycol monobutyl ether; the non-protic organic solvent is N,N-dimethylpropionamide; and the surfactant is an aniline-based polyoxyethylene ether nonionic Gemini surfactant; its structure is as follows:

[0024] , Where R = C1 - C2, n = 4 ~ 7.

[0025] Example 3

[0026] The embodiment of the application is a high-fine-resist-stripping-liquid composition with high compatibility, which comprises 4.5% by weight of an organic amine, 25% by weight of a protic organic solvent, 68.3% by weight of an aprotic organic solvent, 0.5% by weight of a surfactant, 0.3% by weight of an Al corrosion inhibitor, 0.4% by weight of a metal potential regulator, and 1.0% by weight of a surface hydrophilicity improver; wherein the Al corrosion inhibitor is selected from t-butyl catechol; the metal potential regulator is selected from ammonium pyrophosphate; the surface hydrophilicity improver is selected from ammonium tyrosine; the organic amine is selected from hydroxyethyl ethylenediamine; the protic organic solvent is selected from diethylene glycol monoethyl ether; the aprotic organic solvent is selected from N-ethyl formamide; and the surfactant is selected from aniline polyoxyethylene ether nonionic Gemini surfactant; and the structure is as follows:

[0027] , wherein R=C1-C2, n=4~7.

[0028] Embodiment 4

[0029] The embodiment of the application is a high-fine-resist-stripping-liquid composition with high compatibility, which comprises 7.6% by weight of an organic amine, 40% by weight of a protic organic solvent, 50.6% by weight of an aprotic organic solvent, 0.1% by weight of a surfactant, 0.6% by weight of an Al corrosion inhibitor, 1.0% by weight of a metal potential regulator, and 0.1% by weight of a surface hydrophilicity improver; wherein the Al corrosion inhibitor is selected from ethyl gallate; the metal potential regulator is selected from ammonium pyrophosphate; the surface hydrophilicity improver is selected from L-ammonium threonine; the organic amine is selected from monoethanolamine; the protic organic solvent is selected from diethylene glycol monopropyl ether; the aprotic organic solvent is selected from N,N-diethyl formamide; and the surfactant is selected from aniline polyoxyethylene ether nonionic Gemini surfactant; and the structure is as follows:

[0030] , wherein R=C1-C2, n=4~7.

[0031] Embodiment 5

[0032] ​The embodiment of the application is a high-fine-resist-stripping-liquid composition with high compatibility, which comprises 4.0% by weight of an organic amine, 51.2% by weight of a protic organic solvent, 43.1% by weight of an aprotic organic solvent, 0.2% by weight of a surfactant, 0.1% by weight of an Al corrosion inhibitor, 0.6% by weight of a metal potential regulator, and 0.8% by weight of a surface hydrophilicity improver; the Al corrosion inhibitor is 3-tert-butyl phenol; the metal potential regulator is ammonium pyrophosphate; the surface hydrophilicity improver is ammonium serine; the organic amine is diethanolamine; the protic organic solvent is ethylene glycol monomethyl ether; the aprotic organic solvent is N,N-dimethylpropionamide; and the surfactant is aniline polyoxyethylene ether nonionic Gemini surfactant; and the structure is as follows:

[0033] , wherein R=C1-C2, n=4~7.

[0034] Embodiment 6

[0035] The embodiment of the application is a high-fine-resist-stripping-liquid composition with high compatibility, which comprises 8.0% by weight of an organic amine, 41.8% by weight of a protic organic solvent, 48.3% by weight of an aprotic organic solvent, 0.4% by weight of a surfactant, 0.9% by weight of an Al corrosion inhibitor, 0.1% by weight of a metal potential regulator, and 0.5% by weight of a surface hydrophilicity improver; the Al corrosion inhibitor is tert-butyl catechol; the metal potential regulator is ammonium pyrophosphate; the surface hydrophilicity improver is ammonium tyrosine; the organic amine is triethanolamine; the protic organic solvent is ethylene glycol monopropyl ether; the aprotic organic solvent is N-ethyl formamide; and the surfactant is aniline polyoxyethylene ether nonionic Gemini surfactant; and the structure is as follows:

[0036] , wherein R=C1-C2, n=4~7.

[0037] Embodiment 7

[0038] The embodiment of the application discloses a high-fine-resist stripping liquid composition with high compatibility, which comprises 5.0% by weight of an organic amine, 45% by weight of a protic organic solvent, 48% by weight of an aprotic organic solvent, 0.3% by weight of a surfactant, 0.7% by weight of an Al corrosion inhibitor, 0.6% by weight of a metal potential regulator and 0.4% by weight of a surface hydrophilicity improver; wherein the Al corrosion inhibitor is ethyl gallate; the metal potential regulator is ammonium pyrophosphate; the surface hydrophilicity improver is ammonium L-threonate; the organic amine is methyldiethanolamine; the protic organic solvent is diethylene glycol monomethyl ether; the aprotic organic solvent is N-methyl formamide; and the surfactant is aniline polyoxyethylene ether nonionic Gemini surfactant; and the structure is as follows:

[0039] , wherein R = C1-C2, n = 4-7.

[0040] Comparative Example 1

[0041] The embodiment of the application discloses a high-fine-resist stripping liquid composition with high compatibility, which comprises 1.0% by weight of an organic amine, 43% by weight of a protic organic solvent, 54% by weight of an aprotic organic solvent, 0.3% by weight of a surfactant, 0.7% by weight of an Al corrosion inhibitor, 0.6% by weight of a metal potential regulator and 0.4% by weight of a surface hydrophilicity improver; wherein the Al corrosion inhibitor is ethyl gallate; the metal potential regulator is ammonium pyrophosphate; the surface hydrophilicity improver is ammonium L-threonate; the organic amine is methyldiethanolamine; the protic organic solvent is diethylene glycol monomethyl ether; the aprotic organic solvent is N-methyl formamide; and the surfactant is aniline polyoxyethylene ether nonionic Gemini surfactant; and the structure is as follows:

[0042] , wherein R = C1-C2, n = 4-7.

[0043] Comparative Example 2

[0044] The embodiment of a compatible high-fine resist stripping solution composition, including 5.0% by weight of organic amine, 23% by weight of protic organic solvent, 70% by weight of aprotic organic solvent, 0.3% by weight of surfactant; 0.7% by weight of Al corrosion inhibitor, 0.6% by weight of metal potential regulator and 0.4% by weight of surface hydrophilicity improver; wherein the Al corrosion inhibitor is selected from ethyl gallate; the metal potential regulator is selected from ammonium pyrophosphate; the surface hydrophilicity improver is selected from L-threonine ammonium; the organic amine is selected from methyldiethanolamine; the protic organic solvent is selected from diethylene glycol monomethyl ether; the aprotic organic solvent is selected from N-methyl formamide; the surfactant is selected from aniline polyoxyethylene ether nonionic Gemini surfactant; the structure is:

[0045] , wherein R=C1-C2, n=4~7.

[0046] Comparative Example 3

[0047] The embodiment of a compatible high-fine resist stripping solution composition, including 5.0% by weight of organic amine, 70% by weight of protic organic solvent, 23% by weight of aprotic organic solvent, 0.3% by weight of surfactant; 0.7% by weight of Al corrosion inhibitor, 0.6% by weight of metal potential regulator and 0.4% by weight of surface hydrophilicity improver; wherein the Al corrosion inhibitor is selected from ethyl gallate; the metal potential regulator is selected from ammonium pyrophosphate; the surface hydrophilicity improver is selected from L-threonine ammonium; the organic amine is selected from methyldiethanolamine; the protic organic solvent is selected from diethylene glycol monomethyl ether; the aprotic organic solvent is selected from N-methyl formamide; the surfactant is selected from aniline polyoxyethylene ether nonionic Gemini surfactant; the structure is:

[0048] , wherein R=C1-C2, n=4~7.

[0049] Comparative Example 4

[0050] The embodiment of a compatible high-fine resist stripping solution composition, including 5.0% by weight of organic amine, 45% by weight of protic organic solvent, 48.7% by weight of aprotic organic solvent, 0.3% by weight of surfactant, 0.6% by weight of metal potential regulator and 0.4% by weight of surface hydrophilicity improver; wherein the metal potential regulator is selected from ammonium pyrophosphate; the surface hydrophilicity improver is selected from L-threonine ammonium; the organic amine is selected from methyldiethanolamine; the protic organic solvent is selected from diethylene glycol monomethyl ether; the aprotic organic solvent is selected from N-methyl formamide; the surfactant is selected from aniline polyoxyethylene ether nonionic Gemini surfactant; the structure is:

[0051] , wherein R = C1-C2, n = 4-7.

[0052] Comparative Example 5

[0053] The present embodiment is a high-fineness resist stripping liquid composition with high compatibility, comprising 5.0% by weight of an organic amine, 45% by weight of a protic organic solvent, 48.6% by weight of an aprotic organic solvent, 0.3% by weight of a surfactant; 0.7% by weight of an Al corrosion inhibitor and 0.4% by weight of a surface hydrophilicity improver; wherein the Al corrosion inhibitor is selected from ethyl gallate; the surface hydrophilicity improver is selected from L-threonine ammonium; the organic amine is selected from methyldiethanolamine; the protic organic solvent is selected from diethylene glycol monomethyl ether; the aprotic organic solvent is selected from N-methylformamide; and the surfactant is selected from aniline polyoxyethylene ether nonionic Gemini surfactant; and the structure is as follows:

[0054] , wherein R = C1-C2, n = 4-7.

[0055] Comparative Example 6

[0056] The present embodiment is a high-fineness resist stripping liquid composition with high compatibility, comprising 5.0% by weight of an organic amine, 45% by weight of a protic organic solvent, 48.4% by weight of an aprotic organic solvent, 0.3% by weight of a surfactant; 0.7% by weight of an Al corrosion inhibitor and 0.6% by weight of a metal potential regulator; wherein the Al corrosion inhibitor is selected from ethyl gallate; the metal potential regulator is selected from ammonium pyrophosphate; the organic amine is selected from methyldiethanolamine; the protic organic solvent is selected from diethylene glycol monomethyl ether; the aprotic organic solvent is selected from N-methylformamide; and the surfactant is selected from aniline polyoxyethylene ether nonionic Gemini surfactant; and the structure is as follows:

[0057] , wherein R = C1-C2, n = 4-7.

[0058] Comparative Example 7

[0059] The high-compatibility fine resist stripping liquid composition of the embodiment comprises 5.0 parts by weight of an organic amine, 45 parts by weight of a protic organic solvent, 48.3 parts by weight of an aprotic organic solvent; 0.7 parts by weight of an Al corrosion inhibitor, 0.6 parts by weight of a metal potential regulator, and 0.4 parts by weight of a surface hydrophilicity improver; wherein the Al corrosion inhibitor is ethyl gallate; the metal potential regulator is ammonium pyrophosphate; the surface hydrophilicity improver is L-threonine ammonium; the organic amine is methyldiethanolamine; the protic organic solvent is diethylene glycol monomethyl ether; and the aprotic organic solvent is N-methyl formamide.

[0060] The experimental objects of the resist stripping liquid compositions in the examples and comparative examples are Al process, Cu process, and ITO process glass sheets to be stripped in a panel production line. The resist stripping liquid compositions are used to spray the glass sheets at 60°C for 180s, then the residual stripping liquid on the surface of the glass sheets is blown dry and the glass sheets are washed with high-purity water for 120s, and finally the glass sheets are blown dry with high-purity nitrogen. The resist stripping liquid is continuously used to treat the glass sheets for 24h or 800 pieces, and the resist residue and metal layer process corrosion are observed under an optical microscope and an electron scanning microscope. The resist residue and metal layer process corrosion are evaluated, as shown in Tables 1-4:

[0061] Table 1 shows the removal and stripping results of the resist stripping liquid compositions on the resist

[0062]

[0063] Table 2 shows the resist residue of the resist stripping liquid compositions of Examples 1-7 and Comparative Examples 1-7

[0064]

[0065] Table 3 shows the metal layer process corrosion of the resist stripping liquid compositions

[0066]

[0067] Table 4 shows the corrosion evaluation table of the resist stripping liquid compositions of Examples 1-7 and Comparative Examples 1-7 on the aluminum process and copper process

[0068]

[0069] In the above examples, the content of organic amine in Comparative Example 1 is lower than that in Example 7, and the stripping ability is insufficient, and a large amount of resist is left after stripping of the three processes; the content of protic organic solvent or aprotic organic solvent in Comparative Example 2 and Comparative Example 3 is lower than that in Example 7, and the dissolution and cleaning performance on resist is slightly insufficient, thereby resulting in a small amount of resist left after stripping of the three processes; Comparative Example 4 does not add Al corrosion inhibitor, and the protection of Al process metal layer is insufficient, and the Al process metal layer is severely corroded during use of the stripping solution; Comparative Example 5 does not add metal potential regulator, lacks the potential regulation of metal layer, and lacks the synergistic effect between the Al corrosion inhibitor and the surface hydrophilicity improver, and the protection of Al and Cu process metal layer is insufficient, and the Al process metal layer is slightly corroded and the Cu process metal layer is severely corroded during use of the stripping solution; Comparative Example 6 does not add surface hydrophilicity improver, and the photoresist is easily adhered to the ITO process surface during use of the stripping solution, thereby resulting in a small amount of resist left after stripping of the ITO process, and on the other hand, due to the lack of synergistic effect between the surface hydrophilicity improver and the metal potential regulator, the corrosion inhibition of Cu process is insufficient, and a small amount of corrosion occurs during stripping; Comparative Example 7 does not add surfactant, and the dynamic surface tension of the stripping solution is high, the contact angle is large, and the wettability is insufficient, thereby resulting in a large amount of resist left after stripping of the three processes.

[0070] In summary, the organic amine of the present application selects chain alkanolamine, which has high cohesive energy and strong attack on photoresist, and is beneficial to enhance the stripping ability of stripping liquid; the protic organic solvent and the aprotic organic solvent are beneficial to enhance the dissolution speed and total amount of photoresist, and the combination of the two can effectively enhance the dissolution performance and cleaning performance of photoresist, reduce the precipitation of photoresist in the stripping and washing process, meet the high-fineness requirement of stripping liquid, and improve the service life of the liquid. The first type of additive is mainly a compound containing a hydroxyl group, which can be adsorbed on the surface of the Al metal layer and has good corrosion inhibition effect on Al; the second type of additive is a metal potential regulator, which can effectively adjust the metal potential of Cu / Mo and Al / Mo, thereby reducing the corrosion of Cu or Al; ammonium pyrophosphate contains a hydroxyl group in its structure, so it can be adsorbed on the surface of Al to adjust the Al / Mo potential; in addition, the pyrophosphate group can form a complex structure with Cu, thereby effectively adjusting the potential of Cu / Mo; the third type of additive is a surface hydrophilic modifier, which contains an amino group and a hydroxyl group in its structure, the hydroxyl group can form a hydrogen bond with the ITO surface, and the other end of the molecule is an ammonium group and an amino group, which is water-soluble, thereby being beneficial to improve the hydrophilicity of the ITO surface and reduce its lipophilicity, and effectively prevent the adhesion of lipophilic photoresist in the stripping and washing process; in addition, the ammonium salt structure can prevent the interaction of carboxyl and organic amine, affecting its stripping performance; the second type of additive can produce a synergistic effect with the first type of additive to reduce the corrosion of Al to the minimum, and the third type of additive has a nitrogen-containing group, which is easy to be adsorbed on the surface of Cu, thereby producing a synergistic effect with the second type of additive to reduce the corrosion of Cu to the minimum to meet the electrical performance requirements of the process. The combined use of the three types of additives can ensure the compatibility of the stripping liquid for Cu process, Al process and ITO process. The surfactant selected is aniline polyoxyethylene ether non-ionic Gemini surfactant, which can effectively reduce the static and dynamic surface tension of the stripping liquid, reduce the contact angle of the stripping liquid on the photoresist film layer, increase the contact area of the stripping liquid, promote the stripping of the photoresist, and also play a good role in the case of small process line width, ensure the uniformity of the stripping liquid in removing the photoresist, and improve its fineness; in addition, it has a small molecular weight, produces less bubbles, and has a certain defoaming effect, which is beneficial to further improve the stripping performance of the stripping liquid and improve its fineness; in addition, the surfactant has a large molecular space, and has a certain synergistic effect with the third type of additive, preventing the adhesion of photoresist on the surface of the process layer.

[0071] The above merely describes the preferred embodiments of the present application and is not intended to limit the present application, and any modification, equivalent replacement or improvement made within the spirit and principle of the present application shall be included in the protection scope of the present application.

Claims

1. A highly compatible fine resist stripping solution composition, characterized in that, It comprises 2-8% by weight of organic amine, 25-70% by weight of protic organic solvent, 25-70% by weight of aprotic organic solvent, 0.3-3% by weight of additives, and 0.1-0.5% by weight of surfactant; the additives include 0.1-1% by weight of Al corrosion inhibitor, 0.1-1% by weight of metal potential modifier, and 0.1-1% by weight of surface hydrophilicity improver; The surface hydrophilicity improver is an amino acid ammonium salt containing hydroxyl groups, including one or more of L-threonine ammonium, serine ammonium, and tyrosine ammonium.

2. The highly compatible fine resist stripping solution composition as described in claim 1, characterized in that: The Al corrosion inhibitor is a compound containing hydroxyl groups, including one or more of ethyl gallate, 3-tert-butylphenol, and tert-butylcatechol.

3. The highly compatible fine resist stripping solution composition as described in claim 1, characterized in that: The metal potential regulator is ammonium pyrophosphate.

4. The highly compatible fine resist stripping solution composition as described in claim 1, characterized in that: The organic amine is selected from one or more of methyl diethanolamine, (2-aminoethoxy)-1-ethanol, hydroxyethyl ethylenediamine, monoethanolamine, diethanolamine, and triethanolamine.

5. The highly compatible fine resist stripping solution composition as described in claim 1, characterized in that: The protic organic solvent is selected from one or more of diethylene glycol monomethyl ether, diethylene glycol monobutyl ether, diethylene glycol monoethyl ether, diethylene glycol monopropyl ether, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monopropyl ether, and ethylene glycol monobutyl ether.

6. The highly compatible fine resist stripping solution composition as described in claim 1, characterized in that: The aprotic organic solvent is selected from one or more of N-methylformamide, N,N-dimethylpropionamide, N-ethylformamide, and N,N-diethylformamide.

7. The highly compatible fine resist stripping solution composition as described in claim 1, characterized in that: The surfactant is selected as a phenolic polyoxyethylene ether nonionic Gemini surfactant, with the following structure: ， Where R = C1 - C2, n = 4 ~ 7.

Images