Wafer surface quality detection method and system, device, storage medium and computer program product

Abstract

A wafer surface quality detection method and system, device, storage medium and computer program product, the method comprising: obtaining a first image of a cutting path in a middle area of ​​a wafer surface and a second image of a cutting path in an edge area; comparing the color difference of the cutting path in the first image and the second image; and judging the surface quality level of the wafer surface based on the color difference of the cutting path. The present invention is conducive to improving product yield.

Description

Technical Field

[0001] Embodiments of the present invention relate to the semiconductor field, and in particular, to a wafer surface quality detection method and system, equipment, storage medium and computer program product. Background Art

[0002] In semiconductor wafer manufacturing, the quality control of pads (PAD) in the back-end process is very important. Because no matter how high the yield of semiconductor wafer manufacturing is in the wafer factory, as long as the quality of the pads on the wafer is not good, the wires cannot be connected when it is packaged in the packaging factory, and the overall yield after packaging will be equal to zero. Therefore, before the wafers are shipped from the wafer manufacturing factory and before the packaging and testing factory receives them, it is necessary to sample the pads on the wafers for quality characterization and failure analysis.

[0003] However, there is currently no complete comprehensive testing method in this regard in the semiconductor industry. Summary of the invention

[0004] The problem solved by the embodiments of the present invention is to provide a wafer surface quality detection method and system, equipment, storage medium and computer program product, which are conducive to improving product yield.

[0005] To solve the above problems, an embodiment of the present invention provides a wafer surface quality detection method, including: obtaining a first image of a cutting path in a middle area of ​​the wafer surface, and a second image of a cutting path in an edge area; comparing the color difference of the cutting path in the first image and the second image; and judging the surface quality level of the wafer surface based on the color difference of the cutting path.

[0006] Optionally, obtaining a first image of a cutting path in a middle area of ​​the wafer surface and a second image of a cutting path in an edge area includes: obtaining a first image of an area at a center position of the wafer surface, and obtaining a second image of an area at any edge position of the wafer surface, wherein both the first image and the second image include the cutting path.

[0007] Optionally, in the step of obtaining a second image of an area where any edge position of the wafer surface is located, multiple second images of areas where multiple edge positions of the wafer surface are located are obtained; in the step of comparing the color difference of the cutting lines in the first image and the second image, the color difference of the cutting lines in the first image and each second image are compared respectively.

[0008] Optionally, in the step of acquiring a plurality of second images of an area where a plurality of edge positions on the surface of the wafer are located, the plurality of edge positions are evenly distributed along the circumference of the wafer.

[0009] Optionally, in the step of acquiring multiple second images of areas where multiple edge positions of the wafer surface are located, the number of the second images is 3 to 5.

[0010] Optionally, comparing the color difference of the cutting lines in the first image and the second image includes: obtaining color difference values ​​of the cutting lines in the first image and the second image; and judging the surface quality level of the wafer surface based on the color difference of the cutting lines.

[0011] Optionally, the surface quality level of the wafer surface is judged based on the color difference value, including: when the color difference value is less than or equal to the color difference threshold, the surface quality level of the wafer surface meets the standard; when the color difference value is greater than the color difference threshold, the surface quality level of the wafer surface does not meet the standard, and the wafer is manually inspected.

[0012] Optionally, a first image of a cutting path in a middle area of ​​the wafer surface and a second image of a cutting path in an edge area are obtained, including: obtaining a first image of an area where a center position of the wafer surface is located, and obtaining multiple second images of areas where multiple edge positions of the wafer surface are located; comparing color differences of the cutting paths in the first image and the second image, including: respectively obtaining color difference values ​​of the cutting paths in the first image and each second image; based on the color difference values, judging the surface quality level of the wafer surface, when multiple color difference values ​​are all less than or equal to a color difference threshold, the surface quality level of the wafer surface meets the standard; when any one of the multiple color difference values ​​is greater than the color difference threshold, the surface quality level of the wafer surface does not meet the standard, and the wafer is manually inspected.

[0013] Optionally, the middle area and the edge area of ​​the wafer surface are automatically captured to obtain a first image of the cutting path in the middle area of ​​the wafer surface and a second image of the cutting path in the edge area.

[0014] Optionally, artificial intelligence technology is used to compare the color difference of the cutting path in the first image and the second image.

[0015] Correspondingly, an embodiment of the present invention also provides a wafer surface quality detection system, including: a wafer image acquisition module, used to acquire a first image of a cutting path in a middle area of ​​the wafer surface, and a second image of a cutting path in an edge area; a color contrast module, used to compare the color difference of the cutting path in the first image and the second image; and a judgment module, used to judge the surface quality level of the wafer surface based on the color difference of the cutting path.

[0016] Correspondingly, an embodiment of the present invention also provides a device, comprising at least one memory and at least one processor, wherein the memory stores one or more computer instructions, wherein the one or more computer instructions are executed by the processor to implement the wafer surface quality detection method provided by an embodiment of the present invention.

[0017] Correspondingly, an embodiment of the present invention further provides a storage medium, wherein the storage medium stores one or more computer instructions, and the one or more computer instructions are used to implement the wafer surface quality detection method provided by the embodiment of the present invention.

[0018] Accordingly, an embodiment of the present invention further provides a computer program product, including a computer program / instruction, which, when executed by a processor, implements the wafer surface quality detection method provided by an embodiment of the present invention.

[0019] Compared with the prior art, the technical solution of the embodiment of the present invention has the following advantages:

[0020] In the wafer surface quality detection method provided by the embodiment of the present invention, a first image of a cutting path in a middle area of ​​the wafer surface and a second image of a cutting path in an edge area are obtained, and the color difference of the cutting path in the first image and the second image is compared. Based on the color difference of the cutting path, the surface quality level of the wafer surface is judged; in the semiconductor manufacturing process, due to the influence of the process, the color difference of the wafer surface from the center to the edge will gradually occur, especially the color difference of the pad on the wafer surface (PAD Discolor), and the color difference of the cutting paths on the surface of the wafer can characterize the color difference of the pads on the surface of the wafer. In the embodiment of the present invention, a first image of the cutting paths in the middle area of ​​the wafer surface and a second image of the cutting paths in the edge area are obtained, and the color difference of the cutting paths in the first image and the second image are compared, that is, two places where the surface color gradually changes from the middle area to the edge area of ​​the wafer surface with a large difference are obtained, and the color difference of the cutting paths in the first image and the second image can be used to characterize the color change of the pads on the surface of the wafer, that is, to characterize the surface quality level of the wafer, so that the surface quality level of the wafer surface can be judged based on the color difference of the cutting paths. Compared with the solution of evaluating the surface quality of the wafer surface by manual visual inspection, this solution uses the first image and the second image to compare the color difference, which is beneficial to prevent missed inspections caused by untimely manual inspections, thereby helping to improve the completeness of wafer surface quality inspections and thus improve product yields. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figure 1 It is a flow chart of an embodiment of a wafer surface quality detection method of the present invention;

[0022] Figures 2 to 4 It is a schematic diagram corresponding to each step in an embodiment of a wafer surface quality detection method of the present invention;

[0023] Figure 5 It is a functional block diagram of an embodiment of a wafer surface quality detection system of the present invention;

[0024] Figure 6 It is a hardware structure diagram of an embodiment of the device provided by the present invention. DETAILED DESCRIPTION

[0025] As can be seen from the background technology, at present, surface quality inspection of wafers is usually carried out by manual visual inspection, which requires manual visual inspection of the wafer surface under strong light to observe the color changes on the wafer surface to detect the surface quality of the wafer. Manual inspection is prone to untimely inspection, resulting in incomplete surface quality inspection of the wafer and loss of product yield.

[0026] In order to solve the above technical problems, an embodiment of the present invention provides a wafer surface quality detection method. Figure 1 , shows a flow chart of an embodiment of a wafer surface quality detection method of the present invention.

[0027] In this embodiment, the wafer surface quality detection method includes the following basic steps:

[0028] Step S1: acquiring a first image of a cutting path in a middle area of ​​a wafer surface and a second image of a cutting path in an edge area;

[0029] Step S2: comparing the color difference of the cutting path in the first image and the second image;

[0030] Step S3: judging the surface quality level of the wafer surface based on the color difference of the scribe lines.

[0031] In the semiconductor manufacturing process, due to the influence of the process, the color difference of the wafer surface from the center to the edge will gradually occur, especially the color difference of the wafer surface pad (PAD Discolor), and the color difference of the wafer surface cutting path can characterize the color difference of the wafer surface pad. In an embodiment of the present invention, a first image of the cutting path in the middle area of ​​the wafer surface and a second image of the cutting path in the edge area are obtained, and the color difference of the cutting path in the first image and the second image are compared, that is, two places where the surface color gradually changes from the middle area to the edge area of ​​the wafer surface with a large difference are obtained. The color difference of the cutting path in the first image and the second image can be used to characterize the color change of the wafer surface pad, that is, to characterize the surface quality level of the wafer, so that the surface quality level of the wafer surface can be judged based on the color difference of the cutting path. Compared with the solution of evaluating the surface quality of the wafer surface by manual visual inspection, the present solution uses the first image and the second image to compare the color difference, which is conducive to preventing missed inspections caused by untimely manual inspections, thereby helping to improve the completeness of wafer surface quality inspections and thus improve product yields.

[0032] In order to make the above-mentioned purposes, features and advantages of the embodiments of the present invention more obvious and understandable, specific embodiments of the present invention are described in detail below with reference to the accompanying drawings.

[0033] Figures 2 to 4 1 is a schematic diagram corresponding to each step in an embodiment of a wafer surface quality detection method of the present invention, wherein: Figure 3 yes Figure 2 A first image 101 of a scribe line 110 in a middle region 100c of a surface of a wafer 100, Figure 4 yes Figure 2 The second image 102 of the scribe line 110 of the edge region 100 e of the surface of the wafer 100 is shown.

[0034] Combined with reference Figures 1 to 4 , executing step S1: acquiring a first image 101 of a scribe line 110 in a center area 100 c of a surface of a wafer 100 and a second image 102 of a scribe line 110 in an edge area 100 e .

[0035] In the semiconductor manufacturing process, due to process influences, color differences will gradually occur on the surface of the wafer 100 from the center to the edge, especially the color differences (PAD Discolor) of the pads on the surface of the wafer 100. The color differences of the cutting paths 110 on the surface of the wafer 100 can characterize the color differences of the pads on the surface of the wafer 100, thereby performing surface quality inspection of the wafer 100 based on the color differences of the pads on the surface of the wafer 100.

[0036] A first image 101 of the cutting path 110 in the middle area 100c of the surface of the wafer 100 and a second image 102 of the cutting path 110 in the edge area 100e of the surface of the wafer 100 are obtained. The surface of the wafer 100 gradually produces a color difference from the center to the edge. Then, obtaining the first image 101 and the second image 102 is to obtain images of two places where the surface color gradually changes from the middle to the edge of the surface of the wafer 100 and the difference is relatively large, which are used for subsequent color difference comparison.

[0037] Specifically, in this embodiment, a first image 101 of the cutting path 110 of the middle area 100c of the surface of the wafer 100 and a second image 102 of the cutting path 110 of the edge area 100e are obtained, including: obtaining a first image 101 of the area where the center position of the surface of the wafer 100 is located, and obtaining a second image 102 of the area where any edge position of the surface of the wafer 100 is located, and both the first image 101 and the second image 102 include the cutting path 110.

[0038] The center position and any edge position of the surface of the wafer 100 can represent two places where the surface color gradually changes from the middle to the edge of the wafer 100, and the difference is relatively large. Therefore, the area where the center position of the surface of the wafer 100 is located can be selected to obtain the first image 101, and the area where any edge position of the surface of the wafer 100 is located can be selected to obtain the second image 102.

[0039] In this embodiment, in the step of acquiring the second image 102 of a region where any edge position of the surface of the wafer 100 is located, multiple second images 102 of regions where multiple edge positions of the surface of the wafer 100 are located are acquired.

[0040] A plurality of second images 102 of the regions where the plurality of edge positions of the surface of the wafer 100 are located are acquired, that is, image sampling is performed at a plurality of positions on the circumference of the wafer 100 to better characterize the color distribution of the edge position of the wafer 100 .

[0041] In this embodiment, in the step of acquiring a plurality of second images 102 of regions where a plurality of edge positions on the surface of the wafer 100 are located, the plurality of edge positions are evenly distributed along the circumference of the wafer 100 .

[0042] The plurality of edge positions are evenly distributed along the circumference of the wafer 100 , and the plurality of second images 102 obtained can more evenly and comprehensively characterize the color distribution of the edge positions of the wafer 100 .

[0043] In this embodiment, in the step of acquiring a plurality of second images 102 of regions where a plurality of edge positions of the surface of the wafer 100 are located, the number of the second images 102 is 3 to 5.

[0044] The number of the second images 102 is 3 to 5, and sufficient second images 102 can be obtained to comprehensively characterize the color distribution of the edge position of the wafer 100 without excessively sampling the edge position of the wafer 100 and wasting computing power.

[0045] As an example, Figure 2 As shown, in this embodiment, in the step of acquiring multiple second images 102 of the area where multiple edge positions of the surface of the wafer 100 are located, the number of the second images 102 is 4 and they are evenly distributed along the circumference of the wafer 100 .

[0046] In this embodiment, the middle area 100c and the edge area 100e of the wafer 100 surface are automatically captured to obtain a first image 101 of the cutting street 110 in the middle area 100c of the wafer 100 surface and a second image 102 of the cutting street 110 in the edge area 100e.

[0047] Automatically capturing the middle area 100c and the edge area 100e of the surface of the wafer 100 to obtain a first image 101 of the cutting path 110 of the middle area 100c of the surface of the wafer 100 and a second image 102 of the cutting path 110 of the edge area 100e is beneficial to reducing the probability of missed detection, improving the efficiency of image sampling of the wafer 100, and improving the batch operability of surface quality inspection of the wafer 100.

[0048] Execute step S2: compare the color difference of the cutting line 110 in the first image 101 and the second image 102.

[0049] Comparing the color difference of the scribe line 110 in the first image 101 and the second image 102 is used to evaluate the color change of the surface of the wafer 100 according to the color difference, thereby evaluating the surface quality level of the wafer 100 .

[0050] In this embodiment, in the step of comparing the color difference of the cutting line 110 in the first image 101 and the second image 102 , the color difference of the cutting line 110 in the first image 101 and each second image 102 is compared respectively.

[0051] In this embodiment, multiple second images 102 of the areas where multiple edge positions of the surface of the wafer 100 are located are obtained, and the color difference of the cutting path 110 in the first image 101 and each second image 102 is compared respectively. This can more comprehensively compare the color difference between the center position and the edge position of the wafer 100, so as to be more representative of the color changes on the surface of the wafer 100.

[0052] In this embodiment, comparing the color difference of the cutting line 110 in the first image 101 and the second image 102 includes: acquiring the color difference value of the cutting line 110 in the first image 101 and the second image 102 .

[0053] The color difference values ​​of the cutting lines 110 in the first image 101 and the second image 102 are obtained to determine the color change degree of the surface of the wafer 100 according to the color difference values, so as to determine the surface quality level of the surface of the wafer 100 .

[0054] In this embodiment, multiple second images 102 of the area where multiple edge positions of the surface of the wafer 100 are located are obtained, and the color difference of the cutting lines in the first image and the second image is compared, including: respectively obtaining the color difference value of the cutting line 110 in the first image 101 and each second image 102.

[0055] The color difference values ​​of the cutting path 110 in the first image 101 and each second image 102 are respectively obtained, and the multiple color difference values ​​are used for subsequent judgment of the surface quality level of the wafer 100, which is beneficial to improve the accuracy of the surface quality level of the wafer 100 surface.

[0056] In this embodiment, artificial intelligence (AI) technology is used to compare the color difference of the cutting line 110 in the first image 101 and the second image 102 .

[0057] Using artificial intelligence technology to compare the color difference of the cutting path 110 in the first image 101 and the second image 102 is beneficial to reducing the probability of missed detection due to manual inspection, improving the efficiency of color comparison between the first image 101 and the second image 102 of the wafer 100, and improving the accuracy of color comparison between the first image 101 and the second image 102 of the wafer 100, thereby improving the batch operability of surface quality inspection of the wafer 100.

[0058] Executing step S3: judging the surface quality level of the surface of the wafer 100 based on the color difference of the scribe line 110 .

[0059] The color difference of the cutting road 110 can represent the color difference (PAD Discolor) of the pads on the surface of the wafer 100. The color difference of the pads on the surface of the wafer 100 represents the surface quality of the wafer 100. Therefore, the surface quality level of the surface of the wafer 100 can be judged based on the color difference of the cutting road 110.

[0060] In the semiconductor manufacturing process, due to the influence of the process, the surface of the wafer 100 will gradually produce color differences from the center to the edge, especially the color difference of the pads on the surface of the wafer 100 (PAD Discolor), and the color difference of the cutting road 110 on the surface of the wafer 100 can represent the color difference of the pads on the surface of the wafer 100. In this embodiment, a first image 101 of the cutting road 110 in the middle area 100c of the surface of the wafer 100 and a second image 102 of the cutting road 110 in the edge area 100e are obtained, and the color difference of the cutting road 110 in the first image 101 and the second image 102 are compared, that is, the two places where the surface color gradually changes from the middle area 100c to the edge area 100e of the wafer 100 are obtained. The first image 101 can be used to obtain the color difference of the cutting road 110 in the middle area 100c to the edge area 100e of the surface of the wafer 100. The color difference between the cutting road 110 in the first image 101 and the second image 102 represents the color change of the pad on the surface of the wafer 100, that is, the surface quality level of the wafer 100, so that the surface quality level of the wafer 100 can be judged based on the color difference of the cutting road 110. Compared with the solution of evaluating the surface quality of the wafer 100 by manual visual inspection, this solution uses the first image 101 and the second image 102 for color difference comparison, which is beneficial to prevent missed inspections caused by untimely manual inspections, thereby helping to improve the completeness of the surface quality inspection of the wafer 100, and thus improve the product yield.

[0061] In this embodiment, in the step of determining the surface quality level of the surface of the wafer 100 based on the color difference of the scribe line 110 , the surface quality level of the surface of the wafer 100 is determined based on the color difference value.

[0062] Specifically, in this embodiment, the surface quality level of the surface of the wafer 100 is judged based on the color difference value, including: when the color difference value is less than or equal to the color difference threshold, the surface quality level of the surface of the wafer 100 meets the standard.

[0063] When the color difference value is less than or equal to the color difference threshold, it indicates that the color change of the surface of the wafer 100 is within an acceptable range, thereby indicating that the surface quality level of the surface of the wafer 100 meets the standard.

[0064] In this embodiment, the surface quality level of the wafer 100 surface meets the standard, the surface quality inspection of the wafer 100 is completed, and the wafer 100 product can be shipped.

[0065] In this embodiment, when the color difference value is greater than the color difference threshold, the surface quality level of the surface of the wafer 100 does not meet the standard, and the wafer 100 is manually inspected.

[0066] When the color difference value is greater than the color difference threshold, it indicates that the color change on the surface of the wafer 100 is too large and exceeds the acceptable range, thereby indicating that the surface quality level of the surface of the wafer 100 does not meet the standard and manual inspection of the wafer 100 is required.

[0067] In this embodiment, the color difference values ​​of the cutting road 110 in the first image 101 and each second image 102 are respectively obtained. Correspondingly, in this embodiment, in the step of judging the surface quality level of the surface of the wafer 100 based on the color difference values, when multiple color difference values ​​are less than or equal to the color difference threshold, the surface quality level of the surface of the wafer 100 meets the standard.

[0068] When multiple color difference values ​​are all less than or equal to the color difference threshold, it indicates that the color changes at the core position and multiple edge positions on the surface of wafer 100 are within an acceptable range, thereby indicating that the surface quality level of the surface of wafer 100 meets the standard.

[0069] In this embodiment, when any color difference value among the multiple color difference values ​​is greater than the color difference threshold, the surface quality level of the surface of the wafer 100 does not meet the standard, and the wafer 100 is manually inspected.

[0070] When any of the multiple color difference values ​​is greater than the color difference threshold, it indicates that the color variation between the core position and multiple edge positions on the surface of wafer 100 is too large and exceeds the acceptable range, thereby indicating that the surface quality level of the surface of wafer 100 does not meet the standard and manual inspection of wafer 100 is required.

[0071] Correspondingly, the present invention also provides a wafer surface quality detection system. Figure 5 It is a functional block diagram of an embodiment of a wafer surface quality inspection system of the present invention.

[0072] In this embodiment, the wafer surface quality detection system 50 includes: a wafer image acquisition module 501, which is used to acquire a first image of the cutting path in the middle area of ​​the wafer surface and a second image of the cutting path in the edge area; a color contrast module 502, which is used to compare the color difference of the cutting path in the first image and the second image; and a judgment module 503, which is used to judge the surface quality level of the wafer surface based on the color difference of the cutting path.

[0073] The wafer image acquisition module 501 is used to acquire a first image of a scribeline in a center area of ​​a wafer surface and a second image of a scribeline in an edge area.

[0074] In the semiconductor manufacturing process, due to the influence of the process, color differences will gradually appear from the center to the edge of the wafer surface, especially the color difference of the wafer surface pads (PAD Discolor). The color difference of the wafer surface cutting path can characterize the color difference of the wafer surface pads, so as to perform wafer surface quality inspection based on the color difference of the wafer surface pads.

[0075] A first image of a cutting path in a middle area of ​​the wafer surface and a second image of a cutting path in an edge area of ​​the wafer surface are obtained. The wafer surface gradually produces a color difference from the center to the edge. Then, obtaining the first image and the second image is to obtain images of two places where the surface color gradually changes from the middle to the edge of the wafer surface and has a large difference, which are used for subsequent color difference comparison.

[0076] Specifically, in this embodiment, a first image of a cutting path in a middle area of ​​the wafer surface and a second image of a cutting path in an edge area are obtained, including: obtaining a first image of an area where the center position of the wafer surface is located, and obtaining a second image of an area where any edge position of the wafer surface is located, and both the first image and the second image include the cutting path.

[0077] The center position and any edge position of the wafer surface can represent two places where the surface color gradually changes from the middle to the edge of the wafer surface, so that the area where the center position of the wafer surface is located can be selected to obtain the first image, and the area where any edge position of the wafer surface is located can be selected to obtain the second image.

[0078] In this embodiment, in the step of acquiring the second image of the area where any edge position of the wafer surface is located, multiple second images of the areas where multiple edge positions of the wafer surface are located are acquired.

[0079] A plurality of second images of the regions where the plurality of edge positions of the wafer surface are located are acquired, that is, image sampling is performed at a plurality of positions on the circumference of the wafer, so as to better characterize the color distribution of the edge position of the wafer.

[0080] In this embodiment, in the step of acquiring a plurality of second images of the region where a plurality of edge positions on the surface of the wafer are located, the plurality of edge positions are evenly distributed along the circumference of the wafer.

[0081] If the plurality of edge positions are evenly distributed along the circumference of the wafer, the plurality of second images obtained can more evenly and comprehensively characterize the color distribution of the edge positions of the wafer.

[0082] In this embodiment, in the step of acquiring a plurality of second images of the region where the plurality of edge positions of the wafer surface are located, the number of the second images is 3 to 5.

[0083] The number of second images is 3 to 5, and sufficient second images can be obtained to comprehensively characterize the color distribution at the edge of the wafer without excessively sampling the edge of the wafer, which would waste computing power.

[0084] As an example, in this embodiment, in the step of acquiring multiple second images of the area where multiple edge positions of the wafer surface are located, the number of second images is 4, and they are evenly distributed along the circumference of the wafer.

[0085] In this embodiment, the middle area and the edge area of ​​the wafer surface are automatically captured to obtain a first image of the cutting path in the middle area of ​​the wafer surface and a second image of the cutting path in the edge area.

[0086] Automatically capturing the middle area and edge area of ​​the wafer surface to obtain a first image of the cutting path in the middle area of ​​the wafer surface and a second image of the cutting path in the edge area is beneficial to reducing the probability of missed detection, improving the efficiency of wafer image sampling, and improving the batch operability of wafer surface quality inspection.

[0087] The color comparison module 502 is used to compare the color difference of the cutting lines in the first image and the second image.

[0088] The color difference of the cutting lines in the first image and the second image is compared to evaluate the color change of the wafer surface according to the color difference, thereby evaluating the surface quality level of the wafer.

[0089] In this embodiment, in the step of comparing the color difference of the cutting lines in the first image and the second image, the color difference of the cutting lines in the first image and each of the second images is compared respectively.

[0090] In this embodiment, multiple second images of the areas where multiple edge positions of the wafer surface are located are obtained, and the color difference of the cutting lines in the first image and each second image are compared respectively. This can more comprehensively compare the color difference between the center position and the edge position of the wafer, so as to be more representative of the color changes on the wafer surface.

[0091] In this embodiment, comparing the color difference of the cutting lines in the first image and the second image includes: acquiring the color difference value of the cutting lines in the first image and the second image.

[0092] The color difference values ​​of the cutting paths in the first image and the second image are obtained, and are used to judge the degree of color change of the wafer surface according to the color difference values, so as to judge the surface quality level of the wafer surface.

[0093] In this embodiment, multiple second images of the region where multiple edge positions of the wafer surface are located are obtained, and then the color difference of the cutting lines in the first image and the second image is compared, including: respectively obtaining the color difference value of the cutting lines in the first image and each second image.

[0094] The color difference values ​​of the cutting lines in the first image and each second image are obtained respectively, and the multiple color difference values ​​are used for subsequent judgment of the surface quality level of the wafer, which is beneficial to improving the accuracy of the surface quality level of the wafer surface.

[0095] In this embodiment, artificial intelligence (AI) technology is used to compare the color difference of the cutting lines in the first image and the second image.

[0096] Using artificial intelligence technology to compare the color difference of the cutting lines in the first image and the second image is beneficial to reducing the probability of missed detection due to manual inspection, improving the efficiency of color comparison between the first image and the second image of the wafer, and improving the accuracy of color comparison between the first image and the second image of the wafer, thereby improving the batch operability of surface quality inspection of the wafer.

[0097] The judgment module 503 is used to judge the surface quality level of the wafer surface based on the color difference of the scribe line.

[0098] The color difference of the cutting path can represent the color difference of the pads on the wafer surface (PAD Discolor). The color difference of the pads on the wafer surface represents the surface quality of the wafer. Therefore, the surface quality level of the wafer surface can be judged based on the color difference of the cutting path.

[0099] In the semiconductor manufacturing process, due to the influence of the process, the color difference of the wafer surface from the center to the edge will gradually occur, especially the color difference of the wafer surface pad (PAD Discolor), and the color difference of the wafer surface cutting path can characterize the color difference of the wafer surface pad. In this embodiment, a first image of the cutting path in the middle area of ​​the wafer surface and a second image of the cutting path in the edge area are obtained, and the color difference of the cutting path in the first image and the second image are compared, that is, two places where the surface color gradually changes from the middle area to the edge area of ​​the wafer surface with a large difference are obtained. The color difference of the cutting path in the first image and the second image can be used to characterize the color change of the wafer surface pad, that is, to characterize the surface quality level of the wafer, so that the surface quality level of the wafer surface can be judged based on the color difference of the cutting path. Compared with the solution of evaluating the surface quality of the wafer surface by manual visual inspection, the solution uses the first image and the second image to compare the color difference, which is conducive to preventing missed inspections caused by untimely manual inspections, thereby helping to improve the completeness of wafer surface quality inspections and thus improve product yields.

[0100] In this embodiment, in the step of judging the surface quality level of the wafer surface based on the color difference of the scribe line, the surface quality level of the wafer surface is judged based on the color difference value.

[0101] Specifically, in this embodiment, the surface quality level of the wafer surface is judged based on the color difference value, including: when the color difference value is less than or equal to the color difference threshold, the surface quality level of the wafer surface meets the standard.

[0102] When the color difference value is less than or equal to the color difference threshold, it indicates that the color change of the wafer surface is within an acceptable range, thereby indicating that the surface quality level of the wafer surface meets the standard.

[0103] In this embodiment, the surface quality level of the wafer surface meets the standard, the wafer surface quality inspection is completed, and the wafer product can be shipped.

[0104] In this embodiment, when the color difference value is greater than the color difference threshold, the surface quality level of the wafer surface does not meet the standard, and the wafer is manually inspected.

[0105] When the color difference value is greater than the color difference threshold, it indicates that the color change on the wafer surface is too large and exceeds the acceptable range, thereby indicating that the surface quality level of the wafer surface does not meet the standard and the wafer needs to be manually inspected.

[0106] In this embodiment, the color difference values ​​of the cutting lines in the first image and each second image are respectively obtained. Correspondingly, in this embodiment, in the step of judging the surface quality level of the wafer surface based on the color difference values, when multiple color difference values ​​are less than or equal to the color difference threshold, the surface quality level of the wafer surface meets the standard.

[0107] When multiple color difference values ​​are less than or equal to the color difference threshold, it indicates that the color changes at the core position and multiple edge positions of the wafer surface are within an acceptable range, thereby indicating that the surface quality level of the wafer surface meets the standard.

[0108] In this embodiment, when any color difference value among the multiple color difference values ​​is greater than the color difference threshold, the surface quality level of the wafer surface does not meet the standard, and the wafer is manually inspected.

[0109] When any of the multiple color difference values ​​is greater than the color difference threshold, it indicates that the color variation between the core position and multiple edge positions of the wafer surface is too large and exceeds the acceptable range, thereby indicating that the surface quality level of the wafer surface does not meet the standard and the wafer needs to be manually inspected.

[0110] The embodiment of the present invention further provides a device, which can implement the wafer surface quality detection method provided by the embodiment of the present invention by loading the above-mentioned wafer surface quality detection method in the form of a program. An optional hardware structure of the terminal device provided by the embodiment of the present invention can be as follows Figure 6 As shown, it includes: at least one processor 01, at least one communication interface 02, at least one memory 03 and at least one communication bus 04.

[0111] In this embodiment, the number of processor 01, communication interface 02, memory 03, and communication bus 04 is at least one, and the processor 01, communication interface 02, and memory 03 complete mutual communication through communication bus 04. Communication interface 02 can be an interface of a communication module for network communication, such as an interface of a GSM module. Processor 01 may be a central processing unit CPU, or an application specific integrated circuit (ASIC), or one or more integrated circuits configured to implement an embodiment of the present invention. Memory 03 may include a high-speed RAM memory, and may also include a non-volatile memory (NVM), such as at least one disk storage. Among them, memory 03 stores one or more computer instructions, and one or more computer instructions are executed by processor 01 to implement the wafer surface quality detection method provided in an embodiment of the present invention.

[0112] It should be noted that the above-mentioned terminal device may also include other devices (not shown) that may not be necessary for understanding the contents disclosed in the embodiments of the present invention; given that these other devices may not be necessary for understanding the contents disclosed in the embodiments of the present invention, the embodiments of the present invention will not introduce them one by one.

[0113] An embodiment of the present invention further provides a storage medium, wherein the storage medium stores one or more computer instructions, and the one or more computer instructions are used to implement the wafer surface quality detection method provided by the embodiment of the present invention.

[0114] An embodiment of the present invention further provides a computer program product, including a computer program / instruction, which, when executed by a processor, implements the wafer surface quality detection method provided by an embodiment of the present invention.

[0115] In the semiconductor manufacturing process, due to the influence of the process, the color difference of the wafer surface from the center to the edge will gradually occur, especially the color difference of the wafer surface pad (PAD Discolor), and the color difference of the wafer surface cutting path can characterize the color difference of the wafer surface pad. In an embodiment of the present invention, a first image of the cutting path in the middle area of ​​the wafer surface and a second image of the cutting path in the edge area are obtained, and the color difference of the cutting path in the first image and the second image are compared, that is, two places where the surface color gradually changes from the middle area to the edge area of ​​the wafer surface with a large difference are obtained. The color difference of the cutting path in the first image and the second image can be used to characterize the color change of the wafer surface pad, that is, to characterize the surface quality level of the wafer, so that the surface quality level of the wafer surface can be judged based on the color difference of the cutting path. Compared with the solution of evaluating the surface quality of the wafer surface by manual visual inspection, the present solution uses the first image and the second image to compare the color difference, which is conducive to preventing missed inspections caused by untimely manual inspections, thereby helping to improve the completeness of wafer surface quality inspections and thus improve product yields.

[0116] The above-mentioned embodiments of the present invention are the combination of elements and features of the present invention. Unless otherwise mentioned, elements or features may be considered as optional. Each element or feature may be put into practice without being combined with other elements or features. In addition, embodiments of the present invention may be constructed by combining some elements and / or features. The order of operations described in the embodiments of the present invention may be rearranged. Some constructions of any one embodiment may be included in another embodiment, and may be replaced by the corresponding construction of another embodiment. It is obvious to those skilled in the art that claims that do not have a clear reference relationship to each other in the attached claims may be combined into embodiments of the present invention, or may be included as new claims in the amendment after submitting this application.

[0117] Embodiments of the present invention may be implemented by various means such as hardware, firmware, software or a combination thereof. In a hardware configuration, the method according to an exemplary embodiment of the present invention may be implemented by one or more application specific integrated circuits (ASICs), digital signal processors (DSPs), digital signal processing devices (DSPDs), programmable logic devices (PLDs), field programmable gate arrays (FPGAs), processors, controllers, microcontrollers, microprocessors, etc. In a firmware or software configuration, embodiments of the present invention may be implemented in the form of modules, processes, functions, etc. The software code may be stored in a memory unit and executed by a processor. The memory unit is located inside or outside the processor and may send data to the processor and receive data from the processor via various known means.

[0118] The above description of the disclosed embodiments enables one skilled in the art to make or use the present invention. Various modifications to these embodiments will be apparent to one skilled in the art, and the general principles defined herein may be implemented in other embodiments without departing from the spirit or scope of the present invention. Therefore, the present invention will not be limited to the embodiments shown herein, but rather to the widest scope consistent with the principles and novel features disclosed herein.

[0119] Although the present invention is disclosed as above, the present invention is not limited thereto. Any person skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the scope defined by the claims.

Claims

1. A wafer surface quality detection method, characterized in that: include: Acquire a first image of a scribe line in a middle region of a wafer surface and a second image of a scribe line in an edge region; comparing the color difference of the cutting lines in the first image and the second image; Based on the color difference of the scribe lines, the surface quality level of the wafer surface is determined.

2. The wafer surface quality detection method according to claim 1, characterized in that: Acquiring a first image of a cutting path in a middle area of ​​a wafer surface and a second image of a cutting path in an edge area, comprising: A first image of an area where the center position of the wafer surface is located is acquired, and a second image of an area where any edge position of the wafer surface is located is acquired, wherein the first image and the second image both include the cutting path.

3. The wafer surface quality detection method according to claim 2, characterized in that: In the step of acquiring a second image of a region where any edge position of the wafer surface is located, a plurality of second images of regions where a plurality of edge positions of the wafer surface are located are acquired; In the step of comparing the color difference of the cutting lines in the first image and the second image, the color difference of the cutting lines in the first image and each of the second images is compared respectively.

4. The wafer surface quality detection method according to claim 3, characterized in that: In the step of acquiring a plurality of second images of an area where a plurality of edge positions on the surface of the wafer are located, the plurality of edge positions are evenly distributed along the circumference of the wafer.

5. The wafer surface quality detection method according to claim 3 or 4, characterized in that: In the step of acquiring a plurality of second images of areas where a plurality of edge positions of the wafer surface are located, the number of the second images is 3 to 5.

6. The wafer surface quality detection method according to claim 1, characterized in that: Comparing the color difference of the cutting lines in the first image and the second image, including: acquiring the color difference value of the cutting lines in the first image and the second image; In the step of judging the surface quality level of the wafer surface based on the color difference of the scribe line, the surface quality level of the wafer surface is judged based on the color difference value.

7. The wafer surface quality detection method according to claim 6, characterized in that: Based on the color difference value, judging the surface quality level of the wafer surface, including: when the color difference value is less than or equal to a color difference threshold, the surface quality level of the wafer surface meets the standard; When the color difference value is greater than the color difference threshold, the surface quality level of the wafer surface does not meet the standard, and the wafer is manually inspected.

8. The wafer surface quality detection method according to claim 7, characterized in that: Acquiring a first image of a cutting path in a middle area of ​​a wafer surface and a second image of a cutting path in an edge area, comprising: Acquire a first image of an area where a center position of the wafer surface is located, and acquire a plurality of second images of areas where a plurality of edge positions of the wafer surface are located; Comparing the color difference of the cutting lines in the first image and the second image, including: respectively acquiring the color difference value of the cutting lines in the first image and each second image; In the step of judging the surface quality level of the wafer surface based on the color difference values, when a plurality of the color difference values ​​are less than or equal to a color difference threshold, the surface quality level of the wafer surface meets the standard; When any one of the multiple color difference values ​​is greater than the color difference threshold, the surface quality level of the wafer surface does not meet the standard, and the wafer is manually inspected.

9. The wafer surface quality detection method according to claim 1, characterized in that: The middle area and the edge area of ​​the wafer surface are automatically captured to obtain a first image of the cutting path in the middle area of ​​the wafer surface and a second image of the cutting path in the edge area.

10. The wafer surface quality detection method according to claim 1, characterized in that: Artificial intelligence technology is used to compare the color difference of the cutting lines in the first image and the second image.

11. A wafer surface quality detection system, characterized in that: include: A wafer image acquisition module, used to acquire a first image of a cutting path in a middle area of ​​a wafer surface and a second image of a cutting path in an edge area; A color comparison module, used for comparing the color difference of the cutting lines in the first image and the second image; The judging module is used to judge the surface quality level of the wafer surface based on the color difference of the cutting path.

12. A device, characterized in that: It comprises at least one memory and at least one processor, wherein the memory stores one or more computer instructions, wherein the one or more computer instructions are executed by the processor to implement the wafer surface quality detection method as described in any one of claims 1 to 10.

13. A storage medium, characterized in that: The storage medium stores one or more computer instructions, and the one or more computer instructions are used to implement the wafer surface quality detection method as described in any one of claims 1-10.

14. A computer program product comprising a computer program / instructions, characterized in that When the computer program / instruction is executed by a processor, the wafer surface quality detection method described in any one of claims 1 to 10 is implemented.

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