Method for simulating yield and accompaniment of 68Ge nuclide produced based on cyclotron

Abstract

The invention discloses a yield and concomitant simulation method for 68Ge nuclide production based on a cyclotron. The method comprises the following steps: determining a calculation type of an irradiation target material; drawing a change curve of the accompanying product yield of the 68Ge nuclide along with the cooling time when the current target material is irradiated by protons to produce the 68Ge nuclide, including a change curve of the yields of the 68Ge and accompanying products with medium and short half-life periods of the current target material along with the cooling time and a change curve of the yields of accompanying products with long half-life periods along with the cooling time; and determining the number of cooling days of the 68Ge nuclide according to the change curve of the 68Ge nuclide produced by the current target material and the accompanying product yield along with the cooling time. The method solves the problem that the ratio of the yield of 68Ge to the yield of 68Ge accompanied by the 68Ge to the yield of the 68Ge cannot be obtained as large as possible for cooling days in the prior art.

Description

Technical Field

[0001] The present invention belongs to the field of cyclotron accelerator production of isotopes, and in particular relates to a cyclotron accelerator based production method. 68 Simulation method of Ge nuclide yield and associated biomass. Background Art

[0002] With the development of modern medicine and nuclear medicine instruments, medical isotopes are playing an increasingly important role in disease diagnosis and clinical treatment.

[0003] 68 Ga is a very important positron nuclide with a half-life of 68.1 min. It has good application prospects in tumor imaging such as endocrine tumors and prostate cancer. 68 Ga has a short half-life and is used in clinical settings 68 Ge / 68 Ga generator to produce and supply. 68 Ga nucleus 68 Ge has a long half-life (half-life is 270.8 days), which can achieve long-term 68 The supply of Ga is beneficial 68 Ga radiopharmaceuticals labeling and applications. 68 Ge can also find important application as a calibration source for PET scanners.

[0004] 68 Ge is usually produced by irradiating natural gallium-nickel alloy electroplated targets or gallium capsule targets with high-current proton beams. After the target is irradiated, a variety of radioactive nuclides will be produced. The cooling time can make some non-target nuclides (especially impurities with short half-lives) decay into stable nuclides, reducing their impact on the target nuclides.

[0005] 68 The difficulty of Ge production lies in: First, whether using gallium-nickel alloy electroplating target or gallium capsule target production 68 Ge, in production 68 Ge will produce a variety of by-products at the same time. If the cooling time is too long, the production efficiency will be reduced. If the cooling time is too short, the product purity or quality will not meet the requirements or the cost of separation and purification will be increased. Therefore, the selection of cooling time is very important. 68 Second, if you can't get one 68 The number of cooling days for high-proportion production. 68 The number of cooling days for a high-proportion output is 68 The ratio of Ge's output within this cooling period to its by-product output should be as large as possible. 68The curve of the yield of Ge and its by-products changing with the number of cooling days is unknown, so it is impossible to obtain 68 Cooling days for high proportional output. Summary of the invention

[0006] In order to solve the problems existing in the prior art, the present invention proposes a method for producing 68 The method of simulating the yield of Ge nuclides and their associated products aims to solve the problem that the existing technology cannot obtain a 68 The problem of cooling days for high-proportion production.

[0007] The present invention proposes the following technical solutions to solve the technical problems:

[0008] A method for simulating the yield and byproducts of 68Ge nuclides produced by a cyclotron is characterized in that it comprises the following steps:

[0009] Step 1: Determine the calculation type of the irradiation target by using Monte Carlo software;

[0010] Step 2: Combine the simulation results output by Monte Carlo software and further organize: draw the current target material produced by proton irradiation 68 When Ge nuclide, 68 The curve of the accompanying product yield of Ge nuclide with cooling time, including the curve for the current target material 68 The yield curves of Ge and the accompanying products with medium and short half-lives as a function of cooling time and the yield curves of the accompanying products with long half-lives as a function of cooling time;

[0011] Step 3: According to the current target material production 68 The yield of Ge nuclides and their associated products varies with cooling time. 68 Cooling days for Ge nuclide.

[0012] Furthermore, the type of the irradiation target material is determined in step 1, and the type of the irradiation target material includes a calculated type of a gallium-nickel alloy electroplating target and a calculated type of a gallium capsule target.

[0013] Furthermore, when the calculation type of the gallium-nickel alloy electroplating target is selected, the proton passes through the target along the direction of the angle 7°, and the selected energy range is: 32MeV→13MeV energy range, which is the energy range when the proton passes through the gallium-nickel alloy electroplating target. 68 The energy range with relatively high yield of Ge nuclides; when the calculation type of gallium capsule target is selected, the proton beam passes through the target material vertically at 90°, and the selected energy range is: 10MeV-38MeV and 43MeV-70MeV. This energy range is when protons pass through the gallium capsule target. 68 The range of relatively high yield of Ge nuclides.

[0014] Furthermore, the step 2 for the current target 68 The yield curves of Ge and medium and short half-life accompanying products as a function of cooling time and the yield curves of long half-life accompanying products as a function of cooling time; including, for gallium-nickel alloy electroplating targets in the energy range of 32MeV-13MeV, the yield curves of medium and short half-life and long half-life accompanying products as a function of cooling time.

[0015] Furthermore, for the gallium-nickel alloy electroplating target, in the energy range of 32MeV-13MeV, there are 5 accompanying products with medium and short half-lives: Ge-71, Ge-69, Ga-67, Ni-57, and Ni-56, and their respective yields change with cooling time; there are 5 accompanying products with long half-lives: Ga-68, Zn-65, Go-60, Ni-63, and Fe-55, and their respective yields change with cooling time.

[0016] Furthermore, the step 2 for the current target 68 The yield curves of Ge and medium- and short-half-life accompanying products and the yield curves of long-half-life accompanying products vary with the cooling time; including, for gallium capsule targets, the yield curves of medium- and short-half-life and long half-life accompanying products in the energy range of 10MeV-38MeV vary with the cooling time; for gallium capsule targets, the yield curves of medium- and short-half-life and long half-life accompanying products in the energy range of 43MeV-70MeV vary with the cooling time.

[0017] Furthermore, for the gallium capsule target, in the energy range of 10MeV-38MeV, there are 4 accompanying products with medium and short half-lives: Ge-71, Ge-69, Ga-67, and Cu-67, and their respective yields change with cooling time; for the gallium capsule target, in the energy range of 10MeV-38MeV, there are 5 accompanying products with long half-lives: Ga-68, Zn-65, Co-60, Ni-63, and Fe-59, and their respective yields change with cooling time.

[0018] Furthermore, for the gallium capsule target, in the energy range of 43MeV-70MeV, there are 5 accompanying products with medium and short half-lives: Ge-71, Ge-69, Ga-67, Ni-57, and Ni-56, and their respective yields vary with cooling time. For the gallium capsule target, in the energy range of 43MeV-70MeV, there are 8 accompanying products with long half-lives: Ga-68, Zn-65, Co-58, Co-57, Co-60, Fe-55, Ni-63, and Fe-59, and their respective yields vary with cooling time.

[0019] Furthermore, the step 3 is based on the current target production 68 The yield of Ge nuclides and their associated products varies with cooling time. 68 Cooling days for Ge nuclides, including production of GaNi alloy electroplating targets 68 The yield of Ge nuclides and their associated products varies with cooling time. 68 Cooling days of Ge nuclide; according to the production of gallium capsule target 68 The yield of Ge nuclides and their associated products varies with cooling time. 68 Cooling days for Ge nuclide.

[0020] Further, the gallium-nickel alloy electroplating target is produced 68 The yield of Ge nuclides and their associated products varies with cooling time. 68 Cooling days of Ge nuclide and production of gallium capsule targets 68 The yield of Ge nuclides and their associated products varies with cooling time. 68 The cooling days of Ge nuclide are calculated based on 68 The slope of the curve of the ratio of Ge output to total output changes significantly as the standard. When the cooling time is greater than the number of days when the slope of the curve changes significantly, the slope of the curve becomes significantly slower.

[0021] Advantages and effects of the present invention

[0022] The present invention determines the calculation type of the irradiated target material, draws the current target material produced by proton irradiation 68 When Ge nuclide, 68 The curve of the yield of Ge nuclides with the cooling time, according to the current target production 68 The yield of Ge nuclides and their associated products varies with cooling time. 68 The cooling days of Ge nuclide solve the problem that the existing technology cannot obtain 68 The problem of cooling days is to maximize the ratio of Ge's output to its by-product output. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] Figure 1 Produced for the present invention 68 Flow chart of the yield and product simulation method of Ge nuclides;

[0024] Figure 2 is a calculation model of the gallium-nickel alloy electroplating target of the present invention;

[0025] Figure 3 is a calculation model of the gallium capsule target of the present invention;

[0026] Figure 4 The curve of the yield of the main product of the proton irradiated gallium-nickel alloy electroplating target of the present invention changing with the cooling time: the short and medium half-life nuclide curve;

[0027] Figure 5 The curve of the yield of the main product of the proton irradiated gallium-nickel alloy electroplating target of the present invention changing with the cooling time: the long half-life nuclide curve;

[0028] Figure 6 The curve of the yield of the main products of the 43MeV-70MeV proton irradiated niobium capsule target versus cooling time of the present invention: medium and short half-life nuclides;

[0029] Figure 7 The curve of the yield of the main products of the 43MeV-70MeV proton irradiated niobium capsule target versus cooling time of the present invention is: long half-life nuclides;

[0030] Figure 8 The curve of the yield of the main products of the 10MeV-38MeV proton irradiated niobium capsule target versus cooling time of the present invention: medium and short half-life nuclides;

[0031] Fig. 9 The curve of the yield of the main products of the MeV-38MeV proton irradiated niobium capsule target according to the present invention as a function of cooling time is shown as follows: long half-life nuclides;

[0032] Fig.10 For the present invention, 13-32 MeV 68 The ratio of Ge yield to total yield on the electroplating target changes with cooling time;

[0033] Fig.11 For the present invention, 13-32 MeV 68 The ratio of Ge yield to total yield on the electroplating target changes with cooling time;

[0034] Fig.12 For the present invention, 10-30 MeV 68 The ratio of Ge yield to total yield on the capsule target changes with cooling time; DETAILED DESCRIPTION

[0035] Design principle of the present invention:

[0036] 1. The design principle of the present invention for further sorting out the software simulation results: the further sorting is to screen more than 30 to nearly 100 by-products of the Monte Carlo software output results by half-life (less than 1 hour), yield (4 orders of magnitude lower than Ge-68) and other conditions. These products have basically no effect on the cooling time and the subsequent separation process of Ge-68; and the screened nuclides are classified by half-life characteristics.

[0037] 2. The design principle of the cooling days of the present invention: by simulating and calculating the curve of the yield of 68Ge and its accompanying products with the cooling time, the ratio curve of 68Ge to the total yield is drawn. As the cooling days increase, the proportion of 68Ge gradually increases. When the cooling time is greater than 30 days, the slope of the curve slows down significantly, indicating that the decay rate of the accompanying products has slowed down, and most of the short-lived nuclides have decayed to an extremely low order of magnitude, and further cooling will not bring much benefit. Therefore, choosing a cooling time of 30 days reduces the difficulty of separation and purification, saves costs, and takes into account benefits.

[0038] Based on the above invention principle, the present invention designs a method for simulating the yield and associated products of 68Ge nuclides produced by cyclotron, such as Figure 1-12 As shown, its characteristic is that it includes the following steps:

[0039] Step 1: Determine the calculation type of the irradiation target by using Monte Carlo software;

[0040] Use Monte Carlo software such as FLUKA to establish a computational model for proton irradiation of capsule targets or electroplating targets. Input parameters including incident energy, target thickness, irradiation time, particle emission rate, particle shape, target material information, etc. into the Monte Carlo software, establish relevant nuclear reaction physics models in the software, and perform 68 Simulation statistics of Ge and its associated products yield.

[0041] Step 2: Combine the simulation results output by Monte Carlo software and further organize: draw the current target material produced by proton irradiation 68 When Ge nuclide, 68 The curve of the accompanying product yield of Ge nuclide with cooling time, including the curve for the current target material 68 The yield curves of Ge and the accompanying products with medium and short half-lives as a function of cooling time and the yield curves of the accompanying products with long half-lives as a function of cooling time;

[0042] Step 3: According to the current target material production 68 The yield of Ge nuclides and their associated products varies with cooling time. 68 Cooling days for Ge nuclide.

[0043] Furthermore, the type of the irradiation target material is determined in step 1, and the type of the irradiation target material includes a calculated type of a gallium-nickel alloy electroplating target and a calculated type of a gallium capsule target.

[0044] like Figure 2 As shown in the figure, when the calculation type of the gallium-nickel alloy electroplating target is selected, the proton passes through the target along the direction of the angle of 7°, and the selected energy range is: 32MeV→13MeV energy range. This energy range is when the proton passes through the gallium-nickel alloy electroplating target. 68 The energy range with relatively high yield of Ge nuclides;

[0045] like Figure 3 As shown in the figure, when the calculation type of the gallium capsule target is selected, the proton beam passes through the target material at 90° vertically, and the selected energy range is: 10MeV-38MeV and 43MeV-70MeV. This energy range is when the proton passes through the gallium capsule target. 68 The range of relatively high yield of Ge nuclides.

[0046] Furthermore, the step 2 for the current target 68 The yield curves of Ge and medium and short half-life accompanying products as a function of cooling time and the yield curves of long half-life accompanying products as a function of cooling time; including, for gallium-nickel alloy electroplating targets in the energy range of 32MeV-13MeV, the yield curves of medium and short half-life and long half-life accompanying products as a function of cooling time.

[0047] like Figure 4-5 As shown, for the gallium-nickel alloy electroplating target, in the energy range of 32MeV-13MeV, there are 5 accompanying products with medium and short half-lives: Ge-71, Ge-69, Ga-67, Ni-57, Ni-56, and their respective yields change with cooling time; there are 5 accompanying products with long half-lives: Ga-68, Zn-65, Go-60, Ni-63, Fe-55, and their respective yields change with cooling time.

[0048] The step 2 is for the current target material 68 The yield curves of Ge and medium- and short-half-life accompanying products and the yield curves of long-half-life accompanying products vary with the cooling time; including, for gallium capsule targets, the yield curves of medium- and short-half-life and long half-life accompanying products in the energy range of 10MeV-38MeV vary with the cooling time; for gallium capsule targets, the yield curves of medium- and short-half-life and long half-life accompanying products in the energy range of 43MeV-70MeV vary with the cooling time.

[0049] like Figure 6-7As shown, for the gallium capsule target, in the energy range of 10MeV-38MeV, there are 4 accompanying products with medium and short half-lives: Ge-71, Ge-69, Ga-67, and Cu-67, and their respective yields change with cooling time. For the gallium capsule target, in the energy range of 10MeV-38MeV, there are 5 accompanying products with long half-lives: Ga-68, Zn-65, Co-60, Ni-63, and Fe-59, and their respective yields change with cooling time.

[0050] like Figure 8-9 As shown, for the gallium capsule target, in the energy range of 43MeV-70MeV, there are 5 accompanying products with medium and short half-lives: Ge-71, Ge-69, Ga-67, Ni-57, Ni-56, and their respective yields change with cooling time; for the gallium capsule target, in the energy range of 43MeV-70MeV, there are 8 accompanying products with long half-lives: Ga-68, Zn-65, Co-58, Co-57, Co-60, Fe-55, Ni-63, Fe-59, and their respective yields change with cooling time.

[0051] like Figure 9-12 As shown, the step three is based on the current target production 68 The yield of Ge nuclides and their associated products varies with cooling time. 68 Cooling days for Ge nuclides, including production of GaNi alloy electroplating targets 68 The yield of Ge nuclides and their associated products varies with cooling time. 68 Cooling days of Ge nuclide; according to the production of gallium capsule target 68 The yield of Ge nuclides and their associated products varies with cooling time. 68 Cooling days for Ge nuclide.

[0052] The gallium-nickel alloy electroplating target is produced according to 68 The yield of Ge nuclides and their associated products varies with cooling time. 68 Cooling days of Ge nuclide and production of gallium capsule targets 68 The yield of Ge nuclides and their associated products varies with cooling time. 68 The cooling days of Ge nuclide are calculated based on 68 The slope of the curve of the ratio of Ge output to total output changes significantly as the standard. When the cooling time is greater than the number of days when the slope of the curve changes significantly, the slope of the curve becomes significantly slower.

[0053] like Figure 9-12As shown, the slope of the curve changes significantly at the cooling time of 30 days. When the cooling time is greater than 30 days, the slope of the curve slows down significantly.

[0054] It should be emphasized that the above specific embodiments are merely explanations of the present invention, and they are not limitations of the present invention. After reading this specification, those skilled in the art can make modifications to the above embodiments without any creative contribution as needed, but as long as they are within the scope of the claims of the present invention, they are protected by patent law.

Claims

1. A method for simulating the yield and associated products of 68Ge nuclides produced by cyclotron, characterized in that: The following steps are involved: Step 1: Determine the calculation type of the irradiation target by using Monte Carlo software; Step 2: Combine the simulation results output by Monte Carlo software and further organize: draw the current target material produced by proton irradiation 68 When Ge nuclide, 68 The curve of the accompanying product yield of Ge nuclide with cooling time, including the curve for the current target material 68 The yield curves of Ge and the accompanying products with medium and short half-lives as a function of cooling time and the yield curves of the accompanying products with long half-lives as a function of cooling time; Step 3: According to the current target material production 68 The yield of Ge nuclides and their associated products varies with cooling time. 68 Cooling days for Ge nuclide.

2. According to claim 1, a method for simulating the yield and associated products of 68Ge nuclides produced by cyclotron, characterized in that: The step 1 is to determine the type of the irradiation target, and the type of the irradiation target includes the calculated type of the gallium-nickel alloy electroplating target and the calculated type of the gallium capsule target.

3. The method for simulating the yield and associated products of 68Ge nuclides produced by cyclotron according to claim 2, characterized in that: When the calculation type of the gallium-nickel alloy electroplating target is selected, the proton passes through the target along the direction of the angle of 7°, and the selected energy range is: 32MeV→13MeV. This energy range is when the proton passes through the gallium-nickel alloy electroplating target. 68 The energy range with relatively high yield of Ge nuclides; when the calculation type of gallium capsule target is selected, the proton beam passes through the target material vertically at 90°, and the selected energy range is: 10MeV-38MeV and 43MeV-70MeV. This energy range is when protons pass through the gallium capsule target. 68 The range of relatively high yield of Ge nuclides.

4. The method for simulating the yield and associated products of 68Ge nuclides produced by cyclotron according to claim 1, characterized in that: The step 2 is for the current target material 68 The yield curves of Ge and medium and short half-life accompanying products as a function of cooling time and the yield curves of long half-life accompanying products as a function of cooling time; including, for gallium-nickel alloy electroplating targets in the energy range of 32MeV-13MeV, the yield curves of medium and short half-life and long half-life accompanying products as a function of cooling time.

5. The method for simulating the yield and byproducts of 68Ge nuclides produced by cyclotron according to claim 4, characterized in that: For gallium-nickel alloy electroplating targets, in the energy range of 32MeV-13MeV, there are 5 accompanying products with medium and short half-lives: Ge-71, Ge-69, Ga-67, Ni-57, and Ni-56, and their respective yields change with cooling time; there are 5 accompanying products with long half-lives: Ga-68, Zn-65, Go-60, Ni-63, and Fe-55, and their respective yields change with cooling time.

6. The method for simulating the yield and byproducts of 68Ge nuclides produced by cyclotron according to claim 1, characterized in that: The step 2 is for the current target material 68 The yield curves of Ge and medium- and short-half-life accompanying products and the yield curves of long-half-life accompanying products vary with the cooling time; including, for gallium capsule targets, the yield curves of medium- and short-half-life and long half-life accompanying products in the energy range of 10MeV-38MeV vary with the cooling time; for gallium capsule targets, the yield curves of medium- and short-half-life and long half-life accompanying products in the energy range of 43MeV-70MeV vary with the cooling time.

7. The method for simulating the yield and byproducts of 68Ge nuclides produced by cyclotron according to claim 6, characterized in that: For gallium capsule targets, in the energy range of 10MeV-38MeV, there are four accompanying products with medium and short half-lives: Ge-71, Ge-69, Ga-67, and Cu-67, and their respective yields change with cooling time; for gallium capsule targets, in the energy range of 10MeV-38MeV, there are five accompanying products with long half-lives: Ga-68, Zn-65, Co-60, Ni-63, and Fe-59, and their respective yields change with cooling time.

8. The method for simulating the yield and byproducts of 68Ge nuclides produced by cyclotron according to claim 6, characterized in that: For the gallium capsule target, in the energy range of 43MeV-70MeV, there are 5 accompanying products with medium and short half-lives: Ge-71, Ge-69, Ga-67, Ni-57, and Ni-56, and their respective yield curves change with cooling time; for the gallium capsule target, in the energy range of 43MeV-70MeV, there are 8 accompanying products with long half-lives: Ga-68, Zn-65, Co-58, Co-57, Co-60, Fe-55, Ni-63, and Fe-59, and their respective yield curves change with cooling time.

9. The method for simulating the yield and byproducts of 68Ge nuclides produced by cyclotron according to claim 1, characterized in that: The step three is based on the current target production 68 The yield of Ge nuclides and their associated products varies with cooling time. 68 Cooling days for Ge nuclides, including production of GaNi alloy electroplating targets 68 The yield of Ge nuclides and their associated products varies with cooling time. 68 Cooling days of Ge nuclide; according to the production of gallium capsule target 68 The yield of Ge nuclides and their associated products varies with cooling time. 68 Cooling days for Ge nuclide.

10. The method for simulating the yield and byproducts of 68Ge nuclides produced by cyclotron according to claim 9, characterized in that: The gallium-nickel alloy electroplating target is produced according to 68 The yield of Ge nuclides and their associated products varies with cooling time. 68 Cooling days of Ge nuclide and production of gallium capsule targets 68 The yield of Ge nuclides and their associated products varies with cooling time. 68 The cooling days of Ge nuclide are calculated based on 68 The slope of the curve of the ratio of Ge output to total output changes significantly as the standard. When the cooling time is greater than the number of days when the slope of the curve changes significantly, the slope of the curve becomes significantly slower.

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