Silicon-based solid plasma frequency reconfigurable antenna

Abstract

The invention provides a silicon-based solid plasma frequency reconfigurable antenna, and relates to the technical field of frequency reconfigurable antennas. An intrinsic silicon-based structure of the antenna and a metal floor are stacked, a plurality of diodes are arranged on the side, away from the metal floor, of the intrinsic silicon-based structure, the intrinsic silicon-based structure is provided with direct-current feed copper columns and metal through holes in the height direction of the intrinsic silicon-based structure, and a direct-current feed system is arranged on the side, away from the intrinsic silicon-based structure, of the metal floor. One end of the direct-current feed copper column is connected with the diode, and the other end of the direct-current feed copper column penetrates through the metal floor to be connected with the direct-current feed system; the feed connector is arranged on the side, away from the intrinsic silicon-based structure, of the metal floor and penetrates through the metal floor to be embedded in the metal through hole, and the end, away from the metal floor, of the feed connector is connected with the diode through the microstrip feed line. The reconfigurability of the fast frequency is realized by controlling the number of the diodes in the on state. When part of the diodes are in a non-working state, the RCS of the antenna can be effectively reduced.

Description

Technical Field

[0001] The present specification relates to the technical field of frequency reconfigurable antennas, and in particular to a silicon-based solid plasma frequency reconfigurable antenna. Background Art

[0002] With the development of radar technology in recent years, the radar working environment has become more complex and the working field has become more diverse. This has also put forward higher standards for the functional requirements of antennas. In order to meet the multi-functional needs at this stage, the research on the rapid reconfiguration technology of antennas has become a hot topic in antennas today. At the same time, the high integration and low RCS of antennas have also become the focus of current research.

[0003] Traditional metal antennas can only achieve frequency reconfiguration characteristics in a general way due to the fixed shape of their metal radiating parts. However, they cannot meet the needs of fast frequency reconfiguration of the antenna, nor can they meet the needs of low RCS. Summary of the invention

[0004] The purpose of this specification is to provide a silicon-based solid plasma frequency reconfigurable antenna, which can overcome the above-mentioned defects of existing metal antennas.

[0005] The embodiments of this specification are implemented as follows:

[0006] A silicon-based solid plasma frequency reconfigurable antenna comprises an intrinsic silicon-based structure, a metal floor, a DC feeding system, a plurality of diodes, and a feeding connector;

[0007] The intrinsic silicon-based structure is stacked with the metal floor, a plurality of the diodes are arranged on a side of the intrinsic silicon-based structure away from the metal floor, a DC feeding copper column and a metal through hole are respectively arranged on the intrinsic silicon-based structure along its height direction, the DC feeding system is arranged on a side of the metal floor away from the intrinsic silicon-based structure, one end of the DC feeding copper column is connected to the diode, the other end of the DC feeding copper column passes through the metal floor and is connected to the DC feeding system, and the DC feeding copper column and the metal floor are in an isolated state;

[0008] The feed connector is arranged on a side of the metal floor away from the intrinsic silicon-based structure, passes through the metal floor and is embedded in the metal through hole, and one end of the feed connector away from the metal floor is connected to the diode through a microstrip feed line.

[0009] The embodiments of this specification have at least the following advantages or beneficial effects:

[0010] Compared with the existing technology, the feeding connector of the silicon-based solid plasma frequency reconfigurable antenna can transmit electromagnetic signals to the diode through the microstrip feeder, and control the on state of the diode through the DC feeding system to stimulate the electromagnetic wave to radiate into space. By controlling the number of diodes in the on state, the antenna radiation structure can be reconfigured, and the current distribution on the radiator can be changed to achieve reconfigurability at different frequencies. Moreover, when some diodes are in a non-working state, the diodes can effectively reduce the RCS of the antenna because they show the characteristics of silicon-based dielectrics. BRIEF DESCRIPTION OF THE DRAWINGS

[0011] In order to more clearly illustrate the technical solutions of the embodiments of this specification, the drawings required for use in the embodiments will be briefly introduced below. It should be understood that the following drawings only show certain embodiments of the present specification and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other related drawings can be obtained based on these drawings without paying any creative work.

[0012] Figure 1 A schematic diagram of the structure of a silicon-based solid plasma frequency reconfigurable antenna provided in this specification;

[0013] Figure 2 A top view of a silicon-based solid plasma frequency reconfigurable antenna provided for this specification;

[0014] Figure 3 A front view of a silicon-based solid plasma frequency reconfigurable antenna provided for this specification.

[0015] Icons: 1. Silicon base layer; 2. Silicon dioxide isolation layer; 3. Silicon substrate; 4. Metal floor; 5. Diode; 6. DC feeding system; 7. Feed connector; 8. Metal isolation column; 9. Metal through hole; 10. Microstrip feed line; 11. DC feeding copper column. DETAILED DESCRIPTION

[0016] In order to make the purpose, technical solutions and advantages of the embodiments of this specification more clear, the technical solutions in the embodiments of this specification will be clearly and completely described below in conjunction with the drawings in the embodiments of this specification. Obviously, the described embodiments are part of the embodiments of this specification, not all of the embodiments. Generally, the components of the embodiments of this specification described and shown in the drawings here can be arranged and designed in various different configurations.

[0017] Therefore, the following detailed description of the embodiments of the present specification provided in the accompanying drawings is not intended to limit the scope of the present specification claimed for protection, but merely represents selected embodiments of the present specification. Based on the embodiments in the present specification, all other embodiments obtained by ordinary technicians in the field without creative work are within the scope of protection of the present specification.

[0018] It should be noted that similar reference numerals and letters denote similar items in the following drawings, and therefore, once an item is defined in one drawing, it does not need to be further defined and explained in the subsequent drawings.

[0019] In the description of the embodiments of this specification, it should be noted that if the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inside", "outside", etc. appear, the orientation or position relationship indicated is based on the orientation or position relationship shown in the drawings, or the orientation or position relationship in which the product of this specification is usually placed when used. It is only for the convenience of describing this specification and simplifying the description, and does not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operate in a specific orientation, and therefore cannot be understood as a limitation on this specification. In addition, if the terms "first", "second", "third", etc. appear, they are only used to distinguish the description, and cannot be understood as indicating or implying relative importance.

[0020] In addition, the use of terms such as "horizontal", "vertical", and "overhanging" does not mean that the components must be absolutely horizontal or overhanging, but can be slightly tilted. For example, "horizontal" only means that its direction is more horizontal than "vertical", and does not mean that the structure must be completely horizontal, but can be slightly tilted.

[0021] In the description of the embodiments of this specification, it is also necessary to explain that, unless otherwise clearly specified and limited, the words "set", "install", "connect", and "connect" should be understood in a broad sense, for example, it can be fixedly connected, detachably connected, or integrally connected; it can be mechanically connected or electrically connected; it can be directly connected, or indirectly connected through an intermediate medium, or it can be internal communication between two components. For ordinary technicians in this field, the specific meanings of the above terms in this specification can be understood according to specific circumstances.

[0022] Please refer to Figures 1 to 3 , a silicon-based solid plasma frequency reconfigurable antenna provided in one embodiment of the present specification mainly includes an intrinsic silicon-based structure, a metal floor 4, a DC feeding system 6, a plurality of diodes 5, and a feeding connector 7;

[0023] The intrinsic silicon-based structure is stacked with the metal floor 4, a plurality of diodes 5 are arranged on a side of the intrinsic silicon-based structure away from the metal floor 4, a DC feeding copper column 11 and a metal through hole 9 are respectively arranged along the height direction of the intrinsic silicon-based structure, the DC feeding system 6 is arranged on a side of the metal floor 4 away from the intrinsic silicon-based structure, one end of the DC feeding copper column 11 is connected to the diode 5, and the other end of the DC feeding copper column 11 passes through the metal floor 4 and is connected to the DC feeding system 6, and the DC feeding copper column 11 and the metal floor 4 are in an isolated state;

[0024] The feeding connector 7 is arranged on a side of the metal floor 4 away from the intrinsic silicon-based structure. The feeding connector 7 passes through the metal floor 4 and is embedded in the metal through hole 9. The end of the feeding connector 7 away from the metal floor 4 is connected to the diode 5 through a microstrip feed line 10.

[0025] In this embodiment, the diode 5 is a PINIP diode 5 , and a plurality of PINIP diodes 5 are arranged on the surface of the intrinsic silicon-based structure in an array manner.

[0026] It should be noted that under the condition of electrical excitation, the carriers (including electrons and holes) inside the solid plasma device PINIP diode 5 array can be directed to move under the action of diffusion and electromotive force to form surface current, which affects the distribution of electromagnetic parameters such as equivalent dielectric constant and conductivity at the macro scale. When the electrical excitation reaches a threshold value, the carrier concentration reaches 10 18 cm 3 It can be considered that plasma is formed in the semiconductor. At this time, it can show properties similar to metal, thereby achieving the conduction and reflection of electromagnetic signals.

[0027] It can be seen that the feed connector 7 of the above antenna can transmit the electromagnetic signal to the PINIP diode 5 through the microstrip feed line 10, and the DC feed system 6 controls the on state of the diode 5 to stimulate the electromagnetic wave to radiate into space, and controls the number of diodes 5 in the on state to achieve the effect of reconfigurable antenna radiation structure, thereby changing the current distribution on the radiator to achieve the fast frequency reconfigurability of the antenna. Moreover, when some diodes 5 are in a non-working state, the diodes 5 can effectively reduce the RCS of the antenna because they show the characteristics of silicon-based dielectrics.

[0028] Compared with the existing technology, the above antenna is manufactured through silicon-based process, which can greatly improve the integration of the antenna.

[0029] In this embodiment, conductive glue is filled between the metal through hole 9 and the feeding connector 7 , and the feeding connector 7 is connected to the side wall of the metal through hole 9 through the conductive glue.

[0030] In this embodiment, the metal through hole 9 is a silicon-based coaxial metallized hole, which is made by a silicon-based via and a silicon-based inner wall copper plating process. Similarly, other metals such as gold can be plated on the silicon-based inner wall to form the metal through hole 9.

[0031] In this embodiment, an insulating medium is provided between the feeding DC column and the local oscillator silicon-based structure, and the feeding DC column is insulated from the metal floor 4 through the insulating medium.

[0032] In this embodiment, the intrinsic silicon-based structure is formed by stacking a silicon substrate 3, a silicon dioxide isolation layer 2 and a silicon base layer 1, and the diode 5 is located on the side of the silicon base layer 1 away from the silicon dioxide isolation layer 2, and the metal floor 4 is located on the side of the silicon substrate 3 away from the silicon dioxide isolation layer 2.

[0033] In this embodiment, the silicon substrate 3, the silicon dioxide isolation layer 2, the silicon base layer 1 and the metal bottom plate are all rectangular. The above intrinsic silicon-based structure is made of a 4-inch SOI silicon substrate through a silicon-based process.

[0034] In this embodiment, the diode 5 is disposed on one side of the silicon-based layer 1 by an ion implantation process and a silicon-based surface gold plating process.

[0035] In this embodiment, the DC feeding copper column 11 passes through the silicon substrate 3, the silicon dioxide isolation layer 2 and the silicon base layer 1 in sequence through silicon-based vias and deep hole copper plating processes. In detail, the DC feeding system 6 can provide the positive and negative voltages of the control diode 5 through the above method to achieve the effect of accurately controlling the working quantity of the diode 5.

[0036] In this embodiment, a plurality of metal isolation columns 8 are further included. The metal isolation columns 8 sequentially penetrate the silicon substrate 3 , the silicon dioxide isolation layer 2 and the silicon base layer 1 , and one end of the metal isolation column 8 is connected to the metal floor 4 .

[0037] In this embodiment, the metal isolation column 8 is manufactured by a silicon-based via copper plating process.

[0038] In this embodiment, the outer side wall of the feeding connector 7 is connected to the metal floor 4 .

[0039] In this embodiment, the feeding connector 7 is a high-frequency coaxial connector. The feeding connector 7 has a probe, and the probe is connected to the diode 5 through the microstrip feeding line 10 .

[0040] In this embodiment, the width of the microstrip feed line 10 is 2 mm.

[0041] The above are only preferred embodiments of this specification and are not intended to limit this specification. For those skilled in the art, this specification may have various modifications and changes. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of this specification shall be included in the protection scope of this specification.

Claims

1. A silicon-based solid plasma frequency reconfigurable antenna, characterized in that: It includes an intrinsic silicon-based structure, a metal floor, a DC feeding system, a plurality of diodes, and a feeding connector; The intrinsic silicon-based structure is stacked with the metal floor, a plurality of the diodes are arranged on a side of the intrinsic silicon-based structure away from the metal floor, a DC feeding copper column and a metal through hole are respectively arranged on the intrinsic silicon-based structure along its height direction, the DC feeding system is arranged on a side of the metal floor away from the intrinsic silicon-based structure, one end of the DC feeding copper column is connected to the diode, the other end of the DC feeding copper column passes through the metal floor and is connected to the DC feeding system, and the DC feeding copper column and the metal floor are in an isolated state; The feed connector is arranged on a side of the metal floor away from the intrinsic silicon-based structure, passes through the metal floor and is embedded in the metal through hole, and one end of the feed connector away from the metal floor is connected to the diode through a microstrip feed line.

2. The silicon-based solid plasma frequency reconfigurable antenna according to claim 1, characterized in that: Conductive glue is filled between the metal through hole and the feeding connector, and the feeding connector is connected to the side wall of the metal through hole through the conductive glue.

3. The silicon-based solid plasma frequency reconfigurable antenna according to claim 1, characterized in that: An insulating medium is provided between the feed DC column and the local oscillator silicon-based structure, and the feed DC column is insulated from the metal floor through the insulating medium.

4. The silicon-based solid plasma frequency reconfigurable antenna according to claim 1, characterized in that: The intrinsic silicon-based structure is formed by stacking a silicon substrate, a silicon dioxide isolation layer and a silicon base layer, and the diode is located on a side of the silicon base layer away from the silicon dioxide isolation layer, and the metal floor is located on a side of the silicon substrate away from the silicon dioxide isolation layer.

5. The silicon-based solid plasma frequency reconfigurable antenna according to claim 4, characterized in that: The diode is arranged on one side of the silicon base layer through an ion implantation process and a silicon base surface gold plating process.

6. The silicon-based solid plasma frequency reconfigurable antenna according to claim 4, characterized in that: The DC feeding copper column sequentially penetrates the silicon substrate, the silicon dioxide isolation layer and the silicon base layer through a silicon-based via and a deep hole copper plating process.

7. The silicon-based solid plasma frequency reconfigurable antenna according to claim 6, characterized in that: It also includes a plurality of metal isolation columns, which sequentially penetrate the silicon substrate, the silicon dioxide isolation layer and the silicon base layer, and one end of the metal isolation column is connected to the metal floor.

8. The silicon-based solid plasma frequency reconfigurable antenna according to claim 7, characterized in that: The metal isolation column is manufactured by a silicon-based via copper plating process.

9. The silicon-based solid plasma frequency reconfigurable antenna according to claim 1, characterized in that: The outer side wall of the feeding connector is connected to the metal floor.

10. The silicon-based solid plasma frequency reconfigurable antenna according to claim 1, characterized in that: The feeding connector is a high-frequency coaxial connector. The feeding connector has a probe, and the probe is connected to the diode through the microstrip feeding line.

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