Pyrene derivative doped perovskite photosensitive layer and preparation method and application thereof

Abstract

The invention belongs to the technical field of perovskite photosensitive layers of solar cells, and discloses a pyrene derivative doped perovskite photosensitive layer and a preparation method and application thereof. The pyrene derivative doped perovskite photosensitive layer provided by the invention is prepared by spin coating and annealing of a perovskite precursor solution doped with 1-pyrenecarboxaldehyde. According to the doped 1-pyrenecarboxaldehyde provided by the invention, the defect of lead ions (Pb < 2 + >) with insufficient coordination can be passivated, the defect state density of the perovskite photosensitive layer is reduced, a high-quality perovskite thin film is formed, the light conversion rate of the prepared 1-pyrenecarboxaldehyde doped perovskite solar cell is obviously improved, the stability of a perovskite solar cell device is enhanced, and the application prospect is wide. The more effective working time of the solar cell is prolonged, and pollution to the surrounding environment caused by lead leakage can be effectively prevented.

Description

Technical Field

[0001] The present application relates to a perovskite photosensitive layer of a solar cell, and in particular to a perovskite photosensitive layer doped with a pyrene derivative, and a preparation method and application thereof. Background Art

[0002] Organic-inorganic hybrid metal halide perovskite solar cells (PSCs) have become one of the most promising photovoltaic technologies due to their simple manufacturing process and excellent photovoltaic performance. This is mainly due to the excellent optoelectronic properties of perovskite materials, such as high light absorption coefficient, low trap density, long carrier lifetime, high carrier mobility, low exciton binding energy, etc. In the past 10 years, the photoelectric conversion efficiency of organic-inorganic hybrid perovskite solar cells has been significantly improved, from the initial 3.8% to the current 26.1%, and they have great potential as high-efficiency photovoltaic devices.

[0003] A large number of defects will be generated on the surface of perovskite films when they are prepared and exposed to air. These defects are the key factors restricting the performance of perovskite solar cells. The main components of today's perovskite solar cells are organic-inorganic hybrid perovskites. The perovskite materials in high-performance perovskite solar cells contain heavy metal lead. Under-coordinated Pb 2+ Ions can cause non-radiative recombination at the interface of the perovskite-charge transfer layer, thereby limiting the photovoltage and fill factor, resulting in low light conversion efficiency; defects can also cause water or oxygen to penetrate into the perovskite film, thereby accelerating the decomposition of the perovskite, resulting in a lack of stability in perovskite solar cell devices; lead is a heavy metal, and its leakage can pollute the surrounding environment. Therefore, efficient passivation of uncoordinated Pb 2+ And effectively dealing with lead leaks is one of the current research focuses. Summary of the invention

[0004] In order to solve the problem of under-coordinated Pb 2+ In order to solve the technical problems such as low light conversion rate, poor stability and lead leakage that may pollute the surrounding environment, the present application provides a perovskite photosensitive layer doped with a pyrene derivative and a preparation method and application thereof.

[0005] In order to solve the above technical problems, this application adopts the following technical solutions:

[0006] A pyrene derivative doped perovskite photosensitive layer is prepared by spin coating and annealing a perovskite precursor solution doped with 1-pyrene formaldehyde.

[0007] Furthermore, the thickness of the perovskite photosensitive layer described in the present application is 600 to 900 nm.

[0008] Secondly, the present application also provides a method for preparing a perovskite photosensitive layer, comprising the following steps: adding PbI2 (lead iodide), FAI (iodoformamide), PbBr2 (lead bromide), MACl (methylamine chloride), CsI (cesium iodide), FABr (iodoformamide), and MAI (iodoformamide) according to a mass ratio to a mixed solvent of DMF (N,N-dimethylformamide) and DMSO (dimethyl sulfoxide) to obtain a perovskite precursor solution, adding 1-pyrenecarboxaldehyde (Py-CHO) solution to the perovskite precursor solution to obtain a perovskite precursor mixed solution, spin-coating the perovskite precursor mixed solution onto an electron transport layer, and annealing to form a 1-pyrenecarboxaldehyde-doped perovskite photosensitive layer.

[0009] Furthermore, the mass ratio of PbI2, FAI, PbBr2, MACl, CsI, FABr and MAI is 92.38:29.7:6.19:5:3.84:2.13:1, and the volume ratio of the solvent DMF and DMSO is 4:1.

[0010] Furthermore, the added concentration of the 1-pyrene carboxaldehyde solution is 0.1-1 mg / mL.

[0011] Further, the spin coating conditions include statically dropping the precursor solution and spinning it at a speed of 1000 rpm for 10 seconds, then spinning it at a speed of 3000 rpm for 30 seconds, and then spinning it on the electron transport layer. 0.3 mL of ethyl acetate was added as an anti-solvent 20 seconds before the spin coating was completed. After the spin coating was completed, annealing was performed at 100° C. for 40 minutes to obtain the perovskite photosensitive layer FA. 0.90 MA 0.03 Cs 0.07 Pb(I 0.92 Br 0.08 )3.

[0012] Finally, the present application also provides an application of a perovskite photosensitive layer doped with a pyrene derivative, wherein the perovskite photosensitive layer is applied to a perovskite solar cell. The perovskite solar cell comprises a conductive substrate, an electron transport layer, and the above-mentioned perovskite photosensitive layer doped with a pyrene derivative, a hole transport layer and a top electrode.

[0013] Furthermore, the conductive substrate is a FTO or ITO conductive substrate, the electron transport layer is a SnO2 layer, and the top electrode is a highly conductive metal electrode or a highly conductive carbon material electrode.

[0014] Furthermore, the SnO2 layer has a thickness of 30 to 50 nm.

[0015] Furthermore, the preparation method of the hole transport layer comprises the following steps:

[0016] dissolving phenethylammonium bromide in isopropanol as a passivating agent, and applying the passivating agent to the perovskite photosensitive layer by spin coating;

[0017] Adding the lithium bis(trifluoromethylsulfonyl)imide solution, 4-tert-butylpyridine and the cobalt bis(trifluoromethylsulfonyl)imide solution to the chlorobenzene solution of Spiro-OMeTAD (2,2',7,7'-tetrakis-(dimethoxydiphenylamine)-spirofluorene), stirring and mixing to obtain a mixed solution;

[0018] The mixed solution is coated on the perovskite photosensitive layer coated with the passivator by a spin coating method to obtain the hole transport layer.

[0019] More specifically, the method for preparing the hole transport layer comprises the following steps:

[0020] Weigh PEAI (phenylethylammonium bromide) and dissolve it in IPA (isopropyl alcohol) as a passivating agent; absorb the passivating agent and apply it to the perovskite photosensitive layer by spin coating. When the spin coating speed reaches 4000 rpm, spin coating is started and the timing ends after 20 seconds;

[0021] Weigh Spiro-OMeTAD (2,2',7,7'-tetrakis-(dimethoxydiphenylamine)-spirofluorene), add a stirring magnet, add Spiro-OMeTAD into chlorobenzene, stir and mix well, and obtain a Spiro-OMeTAD solution with a mass concentration of 72.25 mg / mL;

[0022] Add the Li-TFSI (lithium bis(trifluoromethylsulfonyl imide) solution, 4-tert-butylpyridine (TBP), and CO-TFSI (cobalt bis(trifluoromethylsulfonyl imide)) solution obtained in the previous step to the Spiro-OMeTAD solution, stir and mix well to obtain a mixed solution A;

[0023] The mixed solution A obtained in the previous step is statically coated on the perovskite photosensitive layer by spin coating at a spin coating speed of 4000 rpm for 30 seconds to obtain the hole transport layer.

[0024] The present application provides a perovskite photosensitive layer doped with pyrene derivatives by spin coating and annealing a perovskite precursor solution doped with 1-pyrene formaldehyde. The pyrene derivative 1-pyrene formaldehyde is doped in the perovskite photosensitive layer, and the carbonyl functional group in 1-pyrene formaldehyde can passivate the insufficiently coordinated lead ions (Pb 2+ ) defect, the electron cloud distribution of the carbonyl C=O bond is biased towards the oxygen atom, which determines the strong polarity and active chemical reactivity of the carbonyl group. The lone pair of electrons on the carbonyl oxygen can react with the unpaired Pb 2+ The ions undergo Lewis acid-base reaction, passivating the underpaired Pb 2+ions, thus reducing the defect state density of the perovskite photosensitive layer and forming a high-quality perovskite film. 1-Pyrene formaldehyde can significantly reduce the defect state, effectively inhibit carrier recombination, and effectively inhibit the uncoordinated Pb 2+ Migrate in the perovskite layer, significantly improve the photovoltage and fill factor, thereby improving the light conversion rate; 1-pyrene formaldehyde reduces defect states and prevents moisture or oxygen from penetrating into the perovskite film, improving the stability of perovskite solar cell devices and greatly increasing the effective working time of solar cells; at the same time, unpaired Pb 2+ The ions form a complex with 1-pyrene carboxaldehyde, which can effectively prevent the pollution of the surrounding environment caused by lead leakage. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] Figure 1 Schematic diagram of the structure of the perovskite solar cell provided for this application;

[0026] Figure 2 Performance comparison diagram of perovskite solar cells prepared with perovskite photosensitive layers provided in Example 1, Example 2, Example 3, Comparative Example 1, Comparative Example 2 and Comparative Example 3;

[0027] Figure 3 This is a performance comparison chart of the perovskite solar cell prepared with the 1-pyrene formaldehyde-doped perovskite photosensitive layer provided in Example 1 after being placed for 3 hours and 170 hours. DETAILED DESCRIPTION

[0028] The present application discloses a pyrene derivative-doped perovskite photosensitive layer and its preparation method and application. Those skilled in the art can refer to the content of this article and appropriately improve the process parameters to achieve it. It should be particularly pointed out that all similar substitutions and modifications are obvious to those skilled in the art, and they are all deemed to be included in this application. The methods and applications of this application have been described through preferred embodiments, and relevant personnel can obviously modify or appropriately change and combine the methods and applications described herein without departing from the content, spirit and scope of this application to implement and apply the technology of this application.

[0029] In order to enable those skilled in the art to better understand the present application, the present application is further described in detail below in conjunction with specific implementation methods.

[0030] Example 1 Preparation of Perovskite Photosensitive Layer Doped with Pyrene Derivatives

[0031] PbI2, FAI, PbBr2, MACl, CsI, FABr, MAI were added to a mixed solvent of DMF and DMSO in a volume ratio of 4:1 in a mass ratio of 92.38:29.7:6.19:5:3.84:2.13:1, and a 1-pyrenecarboxaldehyde solution with a concentration of 0.5 mg / mL was added, and the mixture was stirred and mixed to obtain a precursor mixed solution; the obtained mixed solution was spin-coated on the electron transport layer SnO2 layer, the precursor mixed solution was statically dripped and spin-coated at a speed of 1000 rpm for 10 seconds, and then spin-coated at a speed of 3000 rpm for 30 seconds, and 0.3 mL of anisole was dripped as an anti-solvent 20 seconds before the completion of spin coating. After the spin coating was completed, it was annealed at 100°C for 40 minutes to obtain a 1-pyrenecarboxaldehyde-doped perovskite photosensitive layer.

[0032] Example 2 Preparation of Perovskite Photosensitive Layer Doped with Pyrene Derivatives

[0033] PbI2, FAI, PbBr2, MACl, CsI, FABr, MAI were added to a mixed solvent of DMF and DMSO in a volume ratio of 4:1 in a mass ratio of 92.38:29.7:6.19:5:3.84:2.13:1, and a 1-pyrenecarboxaldehyde solution with a concentration of 0.1 mg / mL was added, and the mixture was stirred and mixed to obtain a precursor mixed solution; the obtained mixed solution was spin-coated on the electron transport layer SnO2 layer, the precursor mixed solution was statically dripped and spin-coated at a speed of 1000 rpm for 10 seconds, and then spin-coated at a speed of 3000 rpm for 30 seconds, and 0.3 mL of anisole was dripped as an anti-solvent 20 seconds before the spin coating was completed. After the spin coating was completed, it was annealed at 100°C for 40 minutes to obtain a 1-pyrenecarboxaldehyde-doped perovskite photosensitive layer.

[0034] Example 3 Preparation of Perovskite Photosensitive Layer Doped with Pyrene Derivatives

[0035] PbI2, FAI, PbBr2, MACl, CsI, FABr, MAI were added to a mixed solvent of DMF and DMSO in a volume ratio of 4:1 in a mass ratio of 92.38:29.7:6.19:5:3.84:2.13:1, and a 1-pyrenecarboxaldehyde solution with a concentration of 1 mg / mL was added, and the mixture was stirred and mixed to obtain a precursor mixed solution; the obtained mixed solution was spin-coated on the electron transport layer SnO2 layer, the precursor mixed solution was statically dripped and spin-coated at a speed of 1000 rpm for 10 seconds, and then spin-coated at a speed of 3000 rpm for 30 seconds, and 0.3 mL of anisole was dripped as an anti-solvent 20 seconds before the completion of spin coating. After the spin coating was completed, it was annealed at 100°C for 40 minutes to obtain a 1-pyrenecarboxaldehyde-doped perovskite photosensitive layer.

[0036] Example 4 Preparation of perovskite solar cells

[0037] Step 1, ultrasonically clean the FTO conductive substrate with detergent, cleaning solution, water, deionized water, acetone, and anhydrous ethanol for 30 minutes in sequence, and blow dry;

[0038] Step 2: The conductive substrate treated in step 1 is treated with ultraviolet ozone for 30 minutes;

[0039] Step 3: forming a SnO2 layer on the conductive substrate obtained in step 2 to obtain an electron transport layer.

[0040] The electron transport SnO2 layer can preferably be prepared according to the following method:

[0041] After ultrasonic treatment, 400 μl of the tin dioxide solution was mixed with deionized water in a ratio of 1:4 by ultrasonic treatment for 5 minutes and the mixture was filtered with a filter pipette. 70 μl of the tin dioxide solution was statically dripped onto the substrate using a pipette and spin-coated at 3000 r / min. After the spin coating, the substrate was annealed at 150°C for 30 minutes and then treated with UV ozone for 10 minutes to form an electron transport SnO2 layer.

[0042] Step 4, preparing a 1-pyrene formaldehyde-doped perovskite photosensitive layer according to the method for preparing the perovskite photosensitive layer in Example 1 of the present application;

[0043] Step 5, preparing a hole transport layer on the perovskite photosensitive layer;

[0044] The hole transport layer can be preferably prepared according to the following steps:

[0045] 5.1 Weigh 50 mg of PEAI (phenylethylammonium bromide) and dissolve it in 1 mL of IPA (isopropyl alcohol) as a passivating agent; take 60 μL of the passivating agent and apply the passivating agent to the perovskite photosensitive layer by spin coating. When the spin coating speed reaches 4000 rpm, start spin coating and count for 20 seconds;

[0046] 5.2 Weigh 72.25 mg of Spiro-OMeTAD (2,2',7,7'-tetrakis-(dimethoxydiphenylamine)-spirofluorene) and add a stirring magnet; add Spiro-OMeTAD to chlorobenzene and stir to mix well to obtain a Spiro-OMeTAD solution with a mass concentration of 72.25 mg / mL;

[0047] 5.3 17.5 μL of Li-TFSI (lithium bis(trifluoromethylsulfonyl imide) solution, 29 μL of 4-tert-butylpyridine (TBP), and 10 μL of CO-TFSI (cobalt bis(trifluoromethylsulfonyl imide)) solution were added to 1 mL of the Spiro-OMeTAD solution obtained in step 5.2, and stirred to mix well to obtain a mixed solution A;

[0048] 5.4 The mixed solution A obtained in step 5.3 is statically coated on the perovskite photosensitive layer by spin coating at a spin coating speed of 4000 rpm for 30 seconds to obtain the hole transport layer;

[0049] Step 6, preparing a metal electrode on the hole transport layer: using a vapor deposition method to prepare an 800 nm silver electrode on the hole transport layer obtained in step 5, the perovskite solar cell can be obtained.

[0050] Comparative Example 1 Preparation of undoped perovskite photosensitive layer

[0051] PbI2, FAI, PbBr2, MACl, CsI, FABr, MAI were added into a mixed solvent of DMF and DMSO in a volume ratio of 4:1 in a mass ratio of 92.38:29.7:6.19:5:3.84:2.13:1, and the mixture was stirred to obtain a precursor solution. The obtained precursor solution was spin-coated onto the electron transport layer SnO2 layer, the precursor mixture was statically dripped and spin-coated at a speed of 1000 rpm for 10 seconds, and then spin-coated at a speed of 3000 rpm for 30 seconds, and 0.3 mL of anisole was dripped as an anti-solvent 20 seconds before the completion of spin coating. After the spin coating was completed, it was annealed at 100°C for 40 minutes to obtain a perovskite photosensitive layer.

[0052] Comparative Example 2 Preparation of 4-Biphenylformaldehyde-doped Perovskite Photosensitive Layer

[0053] PbI2, FAI, PbBr2, MACl, CsI, FABr, MAI were added to a mixed solvent of DMF and DMSO in a volume ratio of 4:1 in a mass ratio of 92.38:29.7:6.19:5:3.84:2.13:1, and a 0.5 mg / mL 4-biphenyl formaldehyde solution was added, and the mixture was stirred to obtain a precursor mixed solution; the obtained mixed solution was spin-coated on the electron transport layer SnO2 layer, and the precursor mixed solution was statically dripped and spin-coated at a speed of 1000 rpm for 10 seconds, and then spin-coated at a speed of 3000 rpm for 30 seconds, and 0.3 mL of anisole was dripped as an anti-solvent 20 seconds before the spin coating was completed. After the spin coating was completed, it was annealed at 100°C for 40 minutes to obtain a 4-biphenyl formaldehyde-doped perovskite photosensitive layer.

[0054] Comparative Example 3 Preparation of 2-naphthaldehyde-doped perovskite photosensitive layer

[0055] PbI2, FAI, PbBr2, MACl, CsI, FABr, MAI were added to a mixed solvent of DMF and DMSO in a volume ratio of 4:1 in a mass ratio of 92.38:29.7:6.19:5:3.84:2.13:1, and a 2-naphthaldehyde solution with a concentration of 0.5 mg / mL was added, and the mixture was stirred to obtain a precursor mixed solution; the obtained mixed solution was spin-coated on the electron transport layer SnO2 layer, the precursor mixed solution was statically dripped and spin-coated at a speed of 1000 rpm for 10 seconds, and then spin-coated at a speed of 3000 rpm for 30 seconds, and 0.3 mL of anisole was dripped as an anti-solvent 20 seconds before the spin coating was completed. After the spin coating was completed, it was annealed at 100°C for 40 minutes to obtain a 2-naphthaldehyde-doped perovskite photosensitive layer.

[0056] Effect Example 1

[0057] The solar cells prepared by the same method as Example 4 for the 1-pyrenecarboxaldehyde-doped perovskite photosensitive layer prepared in Example 1, Example 2, and Example 3, the perovskite photosensitive layer prepared in Comparative Example 1, the 4-biphenylcarboxaldehyde-doped perovskite photosensitive layer prepared in Comparative Example 2, and the 2-naphthaldehyde-doped perovskite photosensitive layer prepared in Comparative Example 3 were tested for photoelectric performance under standard sunlight.

[0058] 1.1 Stability test of the perovskite solar cells prepared in Example 1 and Comparative Example 1 after being placed for one week. The perovskite layer of the solar cell prepared with the undoped 1-pyrene formaldehyde perovskite photosensitive layer (Comparative Example 1) has undergone significant degradation; the 4-biphenyl formaldehyde-doped perovskite photosensitive layer prepared in Comparative Example 2 and the 2-naphthaldehyde-doped perovskite photosensitive layer prepared in Comparative Example 3 have begun to show degradation; while the perovskite layer of the solar cell with the doped 1-pyrene formaldehyde-doped perovskite photosensitive layer (Example 1) has basically not undergone degradation. The 1-pyrene formaldehyde-doped perovskite photosensitive layer prepared in Example 1 can greatly improve the overall air stability of the perovskite cell device.

[0059] 1.2 The perovskite solar cells prepared by the perovskite photosensitive layers of Example 1, Example 2, Example 3, Comparative Example 1, Comparative Example 2 and Comparative Example 3 were tested for photoelectric conversion efficiency using the same method as Example 4. The test results are as follows.

[0060] Table 1 Open circuit voltage, short circuit current density, fill factor and photoelectric conversion efficiency data for different examples

[0061]

[0062] Figure 2It shows that the efficiency of the perovskite solar cell doped with 1-pyrene formaldehyde is significantly improved in terms of open circuit voltage (Voc), short circuit current density (Jsc), and fill factor (FF) compared with the undoped perovskite solar cell. The data in Table 1 show that compared with Comparative Example 1 without the addition of a passivating agent, the photoelectric conversion efficiency of the perovskite solar cell doped with 1-pyrene formaldehyde is increased from 20.19% to 23.21%, an increase of 3.02%; compared with Comparative Examples 2 and 3 in which the passivating agents 4-biphenyl formaldehyde and 2-naphthaldehyde are added, the photoelectric conversion efficiency of the perovskite solar cell doped with 1-pyrene formaldehyde is increased by 1.41% and 1.8%, respectively; therefore, the perovskite cell device prepared by the photosensitive layer of the perovskite doped with 1-pyrene formaldehyde provided in the present application has a relatively high photoelectric conversion efficiency.

[0063] Figure 3 It shows that after 3h and 170h of storage, the voltage and current density of the 1-pyrene formaldehyde-doped perovskite solar cell did not decay significantly. Therefore, the working stability of the solar cell doped with 1-pyrene formaldehyde is enhanced, which increases the more effective working time of the solar cell. And when a 1-pyrene formaldehyde solution with a concentration of 0.5mg / mL is added, the performance of the 1-pyrene formaldehyde-doped perovskite cell device reaches the best.

[0064] The above is only a preferred embodiment of the present application. It should be pointed out that for ordinary technicians in this technical field, several improvements and modifications can be made without departing from the principles of the present application. These improvements and modifications should also be regarded as the scope of protection of the present application.

Claims

1. A perovskite photosensitive layer doped with a pyrene derivative, characterized in that: The perovskite photosensitive layer is prepared by spin coating and annealing a perovskite precursor solution doped with 1-pyrene formaldehyde.

2. The perovskite photosensitive layer according to claim 1, characterized in that: The thickness of the perovskite photosensitive layer is 600-900nm.

3. The method for preparing a perovskite photosensitive layer according to claim 1, characterized in that: PbI2, FAI, PbBr2, MACl, CsI, FABr, and MAI are added to a mixed solvent of DMF and DMSO according to a mass ratio to obtain a perovskite precursor solution, 1-pyrene formaldehyde solution is added to the perovskite precursor solution to obtain a perovskite precursor mixed solution, the perovskite precursor mixed solution is spin-coated onto an electron transport layer, and annealed to prepare a 1-pyrene formaldehyde-doped perovskite photosensitive layer.

4. The method for preparing a perovskite photosensitive layer according to claim 3, characterized in that: The mass ratio of PbI2, FAI, PbBr2, MACl, CsI, FABr and MAI is 92.38:29.7:6.19:5:3.84:2.13:1, and the volume ratio of solvents DMF and DMSO is 4:

1.

5. The method for preparing a perovskite photosensitive layer according to claim 3 or 4, characterized in that: The added concentration of the 1-pyrene formaldehyde solution is 0.1-1 mg / mL.

6. The method for preparing a perovskite photosensitive layer according to claim 3 or 4, characterized in that: The spin coating conditions include statically dropping the precursor solution, spinning it at a speed of 1000 rpm for 10 seconds, and then spinning it at a speed of 3000 rpm for 30 seconds, and then spinning it on the electron transport layer. 0.3 mL of ethyl acetate was added as an anti-solvent 20 seconds before the spin coating was completed. After the spin coating was completed, annealing was performed at 100° C. for 40 minutes to obtain the perovskite photosensitive layer FA. 0.90 MA 0.03 Cs 0.07 Pb(I 0.92 Br 0.08 )3.

7. A perovskite solar cell, characterized in that: It comprises a conductive substrate, an electron transport layer, and the perovskite photosensitive layer, hole transport layer and top electrode as described in any one of claims 1 to 2.

8. The perovskite solar cell according to claim 7, characterized in that: The conductive substrate is a FTO or ITO conductive substrate, the electron transport layer is a SnO2 layer, and the top electrode is a highly conductive metal electrode or a highly conductive carbon material electrode.

9. The perovskite solar cell according to claim 7 or 8, characterized in that: The SnO2 layer has a thickness of 30 to 50 nm.

10. The perovskite solar cell according to claim 7 or 8, characterized in that: The method for preparing the hole transport layer comprises: dissolving phenethylammonium bromide in isopropanol as a passivating agent, and applying the passivating agent to the perovskite photosensitive layer by spin coating; Adding the lithium bis(trifluoromethylsulfonyl)imide solution, 4-tert-butylpyridine and the cobalt bis(trifluoromethylsulfonyl)imide solution to the chlorobenzene solution of Spiro-OMeTAD, stirring and mixing to obtain a mixed solution; The mixed solution is coated on the perovskite photosensitive layer coated with the passivator by a spin coating method to obtain the hole transport layer.

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