Solar cell and preparation method thereof, photovoltaic module, and photovoltaic system
By adding a first metal electrode layer between the second metal electrode layer and the transparent conductive layer in a perovskite/crystalline silicon stacked solar cell using metal materials such as Ti, Cr, and Al, the problem of silver electrode diffusion is solved, the stability of the solar cell is improved and the preparation cost is reduced.
Patent Information
- Application Number
- CN202411717189.6
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-11-27
- Publication Date
- 2025-04-08
AI Technical Summary
In perovskite/crystalline silicon stacked solar cells, silver electrodes are prone to diffuse during sintering and operation, resulting in attenuation of chemical reactions and battery efficiency. In the prior art, there are problems such as many processes, high costs and impact on light transmission and electrical conductivity.
A first metal electrode layer is added between the second metal electrode layer and the transparent conductive layer, and a low-cost metal material such as Ti, Cr, and Al is used to hinder the diffusion of the silver electrode to the perovskite layer.
Effectively prevent the diffusion of silver electrodes, improve the stability of solar cells, and reduce the preparation cost.
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Figure CN119789666A_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to the technical field of solar cells, and in particular to a solar cell and a preparation method thereof, a photovoltaic module, and a photovoltaic system. Background Art
[0002] Perovskite / crystalline silicon tandem solar cells, referred to as tandem cells, have gained widespread attention from academia and industry due to their high efficiency advantages. However, the stability problem of tandem cells is one of the main obstacles to their commercialization and industrialization. Since silver electrodes are required for metallization on the top of tandem cells, the silver electrodes will penetrate into the perovskite layer during long-term operation, resulting in chemical reactions and attenuation of battery efficiency. In the prior art, the diffusion problem of silver electrodes is solved by using no metal electrodes, or making the relevant functional layers thick and dense, or preparing a dense protective layer between the electrode and the perovskite layer. However, there are disadvantages of more processes and increased costs. At the same time, the thickness of the relevant functional layers will also affect the light transmittance and electrical conductivity. Therefore, it is still necessary to provide a solar cell and a preparation method to solve the diffusion problem of silver electrodes during sintering and operation. Summary of the invention
[0003] The present invention aims to solve at least one of the technical problems in the related art to a certain extent. To this end, the present invention provides a solar cell and a preparation method thereof, a photovoltaic module, and a photovoltaic system, wherein the solar cell can effectively prevent the diffusion of silver electrodes, improve the stability of the solar cell, and has a lower preparation cost than the prior art.
[0004] To this end, the first aspect of the present invention provides a solar cell, comprising: a substrate, a first functional layer, a perovskite layer, a second functional layer, a transparent conductive layer, a first metal electrode layer and a second metal electrode layer, which are stacked in sequence;
[0005] wherein one of the first functional layer and the second functional layer comprises a hole transport layer, and the other comprises an electron transport layer;
[0006] The material of the first metal electrode layer includes at least one of Ti, Cr, and Al;
[0007] The material of the second metal electrode layer includes silver.
[0008] In order to solve the deficiencies in the prior art, the present invention increases a first metal electrode layer between the second metal electrode layer and the transparent conductive layer to hinder the diffusion of the silver electrode into the perovskite layer, thereby improving the stability of the solar cell. At the same time, the first metal electrode layer is made of low-cost metal, thereby reducing the preparation cost.
[0009] According to an embodiment of the present invention, the thickness of the first metal electrode layer is 5nm-100μm;
[0010] And / or, the thickness of the second metal electrode layer is 2nm-10μm;
[0011] And / or, the thickness of the perovskite layer is 10-3000 nm.
[0012] According to an embodiment of the present invention, the material of the transparent conductive layer includes at least one of titanium dioxide, tin oxide, zinc oxide, zirconium oxide, gallium zinc oxide, aluminum zinc oxide, indium zinc oxide, fluorine-doped tin oxide, indium tin oxide, indium tungsten oxide, indium-doped cadmium oxide, barium stannate, tin titanium oxide, and tin zinc oxide.
[0013] According to an embodiment of the present invention, the solar cell further includes a buffer layer, and the buffer layer is disposed between the second functional layer and the transparent conductive layer.
[0014] According to an embodiment of the present invention, the material band gap of the perovskite layer is 1.50-1.75 eV.
[0015] According to an embodiment of the present invention, the material of the perovskite layer includes ABX3;
[0016] wherein A is selected from at least one of FA, MA, Cs or Rb;
[0017] B is selected from at least one of Pb, Sn or Sr;
[0018] X is selected from at least one of Br, I and Cl.
[0019] According to an embodiment of the present invention, the solar cell is a stacked cell.
[0020] A second aspect of the present invention provides a method for preparing the solar cell according to the first aspect, comprising:
[0021] A substrate is provided, and a first functional layer, a perovskite layer, a second functional layer, a transparent conductive layer, a first metal electrode layer and a second metal electrode layer are sequentially stacked on one surface of the substrate.
[0022] Because the material of the first metal layer includes at least one of Ti, Cr, and Al, it is relatively stable, and its energy level matches the second metal layer and the transparent conductive layer. Therefore, it can hinder the diffusion of the silver electrode into the perovskite layer, thereby improving the stability of the solar cell. At the same time, because the first metal electrode layer is made of low-cost metal, the preparation cost of the solar cell is also reduced.
[0023] A third aspect of the present invention provides a photovoltaic module, the photovoltaic module comprising at least one battery string, the battery string comprising at least two solar cells according to the first aspect.
[0024] Therefore, the photovoltaic module has all the advantages of the aforementioned solar cells, which will not be described in detail here.
[0025] A fourth aspect of the present invention provides a photovoltaic system, which includes the photovoltaic assembly described in the third aspect.
[0026] Therefore, the photovoltaic system has all the advantages of the aforementioned photovoltaic components, which will not be described in detail here.
[0027] Additional aspects and advantages of the present invention will be given in part in the following description and in part will be obvious from the following description, or will be learned through practice of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS
[0028] The above and / or additional aspects and advantages of the present invention will become apparent and easily understood from the description of the embodiments in conjunction with the following drawings, in which:
[0029] Figure 1 One of the structural schematic diagrams of the solar cell provided by the present invention is shown;
[0030] Figure 2 The second structural schematic diagram of the solar cell provided by the present invention is shown;
[0031] Figure 3 The third structural schematic diagram of the solar cell provided by the present invention is shown;
[0032] Figure 4 A comparison chart of the photoelectric conversion efficiency of the solar cells prepared in Example 1 of the present invention and Comparative Example 1 is shown.
[0033] Reference numerals:
[0034] Solar cell 100 , substrate 101 , first functional layer 102 , perovskite layer 103 , second functional layer 104 , transparent conductive layer 105 , first metal electrode layer 106 , second metal electrode layer 107 , buffer layer 108 , silicon bottom cell 109 , connection layer 110 . DETAILED DESCRIPTION
[0035] The embodiments of the present invention are described in detail below. The embodiments described below are exemplary and are only used to explain the present invention, and should not be understood as limiting the present invention.
[0036] It should be understood that when an element or layer is referred to as "on ...", "adjacent to ...", "connected to" or "coupled to" other elements or layers, it can be directly on, adjacent to, connected to or coupled to other elements or layers, or there can be intervening elements or layers. On the contrary, when an element is referred to as "directly on ...", "directly adjacent to ...", "directly connected to" or "directly coupled to" other elements or layers, there is no intervening element or layer. It should be understood that although the terms first, second, third, etc. can be used to describe various elements, components, regions, layers and / or parts, these elements, components, regions, layers and / or parts should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or part from another element, component, region, layer or part. Therefore, without departing from the teachings of the present disclosure, the first element, component, region, layer or part discussed below can be represented as the second element, component, region, layer or part. And when the second element, component, region, layer or part is discussed, it does not mean that the present disclosure necessarily has the first element, component, region, layer or part.
[0037] It should be noted that the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include one or more of the features. Further, in the description of the present invention, unless otherwise specified, the meaning of "plurality" is two or more.
[0038] The endpoints and any values of the ranges disclosed in this article are not limited to the precise ranges or values, and these ranges or values should be understood to include values close to these ranges or values. For numerical ranges, the endpoint values of each range, the endpoint values of each range and the individual point values, and the individual point values can be combined with each other to obtain one or more new numerical ranges, which should be considered as specifically disclosed in this article.
[0039] In order to make the present invention more easily understood, certain technical and scientific terms are specifically defined below. Unless otherwise clearly defined elsewhere in this document, all other technical and scientific terms used herein have the meanings commonly understood by those skilled in the art to which the present invention belongs.
[0040] In this document, the terms “include” or “comprising” are open expressions, that is, including the contents specified in the present invention but not excluding other contents.
[0041] In the related technology, in order to solve the diffusion problem of silver electrodes during battery preparation and operation, metal-free electrodes can be used, or the relevant functional layers can be made thick and dense, or a dense protective layer can be prepared between the electrode and the perovskite layer to solve the diffusion problem of silver electrodes. However, there are disadvantages of more processes and increased costs. At the same time, the increase in the thickness of the relevant functional layers will also affect the light transmittance and electrical conductivity.
[0042] The present invention provides a solar cell, which comprises: a substrate, a first functional layer, a perovskite layer, a second functional layer, a transparent conductive layer, a first metal electrode layer and a second metal electrode layer stacked in sequence; wherein one of the first functional layer and the second functional layer comprises a hole transport layer, and the other comprises an electron transport layer; the material of the first metal electrode layer comprises at least one of Ti, Cr and Al; and the material of the second metal electrode layer comprises silver. The solar cell can effectively prevent the diffusion of the silver electrode, improve the stability of the solar cell, and at the same time, the preparation cost is lower than that of the prior art.
[0043] According to an embodiment of the present invention, a first aspect of the present invention provides a solar cell, the structure of which is shown in FIG. Figure 1 .
[0044] According to an embodiment of the present invention, a solar cell 100 includes a substrate 101 , a first functional layer 102 , a perovskite layer 103 , a second functional layer 104 , a transparent conductive layer 105 , a first metal electrode layer 106 , and a second metal electrode layer 107 which are stacked in sequence.
[0045] According to a specific embodiment of the present invention, the substrate 101 may be silicon, CdTe (cadmium telluride thin film solar cell), CIGS (copper indium gallium selenide thin film solar cell), etc. The thickness of the substrate 101 may be 1 μm-5 cm.
[0046] According to a specific embodiment of the present invention, one of the first functional layer 102 and the second functional layer 104 includes a hole transport layer, and the other includes an electron transport layer. That is, when the first functional layer 102 is a hole transport layer, the second functional layer 104 is an electron transport layer; when the first functional layer 102 is an electron transport layer, the second functional layer 104 is a hole transport layer.
[0047] Specifically, the material of the hole transport layer includes but is not limited to a p-type charge transport material, such as nickel oxide (NiO x, x=0.1-10), copper ferrous oxide (CuFeO2), copper aluminate (CuAlO2), cuprous thiocyanate (CuSCN), cuprous oxide (Cu2O), tungsten trioxide (WO3), copper diiodide (CuI2), molybdenum disulfide (MoS2), iron disulfide (FeS2), poly 3-hexylthiophene (P3HT), 2,2',7,7'-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9'-spirobifluorene (Spiro-meoTAD, cas:207739-72-8), Poly-TBD, PFN(poly[(9,9-bis(3′-(N,N-dimethylamino)propyl)-2,7-fluorene)-alt-2,7 -(9,9-dioctylfluorene)]), PEDOT:PSS (poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonic acid)), PTAA (poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine]), Spiro-TTB (cas: 515834-67-0); self-assembled monomolecular materials, such as [2-(9H-carbazole-9-yl)ethyl]phosphonic acid (2PACz), [2-(3,6-dimethoxy-9H-carbazole-9-yl)ethyl]phosphonic acid, [4-(3,6-dimethyl-9H-carbazole-9-yl)butyl]phosphonic acid, 4-mercaptobenzoic acid and 4-[bis(2,4-dimethoxybiphenyl-4-yl)amino]-biphenyl-4-carboxylic acid. The thickness of the hole transport layer can be 0.1-100 nm.
[0048] Specifically, the materials of the electron transport layer include but are not limited to TiO2, SnO2, ZnO, ZrO2, In2O3, CdS, CdSe, BaSnO3, Nb2O5, C 60 The thickness of the electron transport layer may be 1-500 nm.
[0049] According to a specific embodiment of the present invention, the solar cell may further include a buffer layer 108, which is disposed between the second functional layer 104 and the transparent conductive layer 105 to improve the stability of the device, protect the perovskite layer, and prevent interface material diffusion and ion migration. Figure 2 The material of the buffer layer 108 is not particularly limited, for example, amorphous tin oxide (SnO x ), which can be prepared by atomic layer deposition.
[0050] According to a specific embodiment of the present invention, the material of the perovskite layer 103 includes ABX3, wherein A represents a monovalent cation. Specifically, the optional elements of A include but are not limited to FA, MA, Cs, Rb, that is, formamidinium ion (CH2(NH2)2 +, F.A. + ), methylammonium ion (CH3NH3, MA + ), cesium ion (Cs + ), rubidium ions (Rb + ). B represents a divalent cation. Specifically, the optional elements of B include but are not limited to Pb, Sn, Sr, that is, lead ion (Pb 2+ ), tin ions (Sn 2+ ), strontium ion (Sr 2+ ). X represents a monovalent anion. Specifically, the optional elements of X include but are not limited to Cl, Br, I, i.e., chloride ion (Cl - ), bromide ion (Br - ), iodide ion (I - ).
[0051] Specifically, the material band gap of the perovskite layer is 1.50-1.75eV, and those skilled in the art can choose according to actual needs, for example, 1.50eV, 1.51eV, 1.52eV, 1.53eV, 1.54eV, 1.55eV, 1.56eV, 1.57eV, 1.58eV, 1.59eV, 1.60eV, 1.61eV, 1.62eV, 1.63eV, 1.64eV, 1.65eV, 1.66eV, 1.67eV, 1.68eV, 1.69eV, 1.70eV, 1.71eV, 1.72eV, 1.73eV, 1.74eV, 1.75eV, etc.
[0052] Specifically, the thickness of the perovskite layer is 10-3000 nm, and those skilled in the art can select according to actual needs, for example, 10 nm, 50 nm, 100 nm, 150 nm, 200 nm, 250 nm, 300 nm, 350 nm, 400 nm, 450 nm, 500 nm, 550 nm, 600 nm, 650 nm, 700 nm, 750 nm, 800 nm, 850 nm, 900 nm, 950nm, 1000nm, 1100nm, 1200nm, 1300nm, 1400nm, 1500nm, 1600nm, 1700nm, 1800nm, 1900nm, 2000nm, 2100nm, 2200nm, 2300nm, 2400nm, 2500nm, 2600nm, 2700nm, 2800nm, 2900nm, 3000nm, etc.
[0053] According to a specific embodiment of the present invention, the material type of the transparent conductive layer 105 is not particularly limited, and those skilled in the art can select it according to actual needs, such as one or more of titanium dioxide (TiO2), tin oxide (SnO2), zinc oxide (ZnO), zirconium oxide (ZrO2), gallium zinc oxide (GZO), aluminum zinc oxide (AZO), indium zinc oxide (IZO), fluorine-doped tin oxide (FTO), indium tin oxide (ITO), indium tungsten oxide (IWO), indium-doped cadmium oxide (ICO), barium stannate (BaSnO3), tin titanium oxide (TiSnOx), and tin zinc oxide (SnZnOx).
[0054] Specifically, the thickness of the transparent conductive layer 105 can be 5-500nm, and those skilled in the art can choose according to actual needs, for example, 5nm, 10nm, 50nm, 100nm, 150nm, 200nm, 250nm, 300nm, 350nm, 400nm, 450nm, 500nm, etc.
[0055] According to a specific embodiment of the present invention, the material of the first metal electrode layer 106 includes at least one of Ti, Cr, and Al, which is disposed between the second metal electrode layer and the transparent conductive layer. On the one hand, it can form an ohmic contact with the transparent conductive layer. Secondly, the above metals have high density, which can prevent the battery from sintering and the diffusion of silver electrodes during operation. In addition, the above metals have good chemical stability and avoid reaction with perovskite-related halogen ions. At the same time, the material of the electrode layer is a low-cost metal, which also reduces the preparation cost compared to the prior art.
[0056] According to a specific embodiment of the present invention, the thickness of the first metal electrode layer 106 is 5nm-100μm, and those skilled in the art can choose according to actual needs, for example, 5nm, 10nm, 20nm, 30nm, 40nm, 50nm, 60nm, 70nm, 80nm, 90nm, 100nm, 200nm, 300nm, 400nm, 500nm, 600nm, 700nm, 800nm, 900nm, 1μm, 10μm, 20μm, 30μm, 40μm, 50μm, 60μm, 70μm, 80μm, 90μm, 100μm, etc.
[0057] According to a specific embodiment of the present invention, the material of the second metal electrode layer 107 includes Ag, and may also include Cu, Al, etc., that is, the second metal electrode layer 107 may be an Ag layer, or may be an Ag / Cu layer, an Ag / Al layer, or an Ag / Cu / Al layer. The thickness of the second metal electrode layer 107 is 2nm-10μm, and those skilled in the art may select it according to actual needs, such as 2nm, 5nm, 10nm, 15nm, 20nm, 30nm, 40nm, 50nm, 60nm, 70nm, 80nm, 90nm, 100nm, 200nm, 300nm, 400nm, 500nm, 600nm, 700nm, 800nm, 900nm, 1μm, 5μm, 10μm, etc.
[0058] According to an embodiment of the present invention, the solar cell may be a stacked cell, the structure of which is shown in FIG. Figure 3 Specifically, the solar cell 100 may include a silicon bottom cell 109, a connection layer 110, a first functional layer 102, a perovskite layer 103, a second functional layer 104, a transparent conductive layer 105, a first metal electrode layer 106 and a second metal electrode layer 107 which are stacked in sequence.
[0059] The first functional layer 102 , the perovskite layer 103 , the second functional layer 104 , the transparent conductive layer 105 , the first metal electrode layer 106 and the second metal electrode layer 107 are as described above and will not be described in detail herein.
[0060] According to a specific embodiment of the present invention, the structural composition of the silicon bottom cell 109 is not particularly limited, and those skilled in the art may select it according to actual needs, such as HJT heterojunction, TOPCon, and PERC technology type cells.
[0061] According to a specific embodiment of the present invention, the structure of the connecting layer 110 is not particularly limited, and those skilled in the art can select it according to actual needs. It is used to connect the silicon bottom cell 109 and the perovskite cell, and can specifically include transparent conductive oxide (TCO), polycrystalline silicon, microcrystalline silicon, nanocrystalline silicon, n-SiO x One or more of (x=1-2).
[0062] Specifically, the thickness of the connecting layer 110 is 2-500nm, and those skilled in the art can choose according to actual needs, for example, 2nm, 5nm, 10nm, 50nm, 100nm, 150nm, 200nm, 250nm, 300nm, 350nm, 400nm, 450nm, 500nm, etc.
[0063] According to an embodiment of the present invention, a second aspect of the present invention provides a method for preparing the solar cell described in the first aspect. The preparation method comprises:
[0064] A substrate 101 is prepared, and a first functional layer 102 , a perovskite layer 103 , a second functional layer 104 , a transparent conductive layer 105 , a first metal electrode layer 106 and a second metal electrode layer 107 are sequentially stacked on one surface of the substrate 101 .
[0065] According to a specific embodiment of the present invention, the preparation methods of the first functional layer 102, the perovskite layer 103, the second functional layer 104, and the transparent conductive layer 105 are not particularly limited, and those skilled in the art may select them according to actual needs, such as physical vapor deposition, chemical vapor deposition, solution method, etc.
[0066] According to a specific embodiment of the present invention, the first metal electrode layer 106 and the second metal electrode layer 107 may be prepared by one or more of evaporation, screen printing, sputtering, and mechanical bonding.
[0067] According to a specific embodiment of the present invention, when the solar cell is a stacked cell, the preparation method includes:
[0068] A silicon bottom cell 109 is prepared, and a connection layer 110, a first functional layer 102, a perovskite layer 103, a second functional layer 104, a transparent conductive layer 105, a first metal electrode layer 106 and a second metal electrode layer 107 are sequentially stacked on one surface of the silicon bottom cell 109.
[0069] Specifically, the preparation method of the silicon bottom cell 109 is not particularly limited, and those skilled in the art may select the method according to actual needs.
[0070] According to an embodiment of the present invention, a third aspect of the present invention provides a photovoltaic component, the photovoltaic component includes at least one battery string, and the battery string includes at least two solar cells described in the first aspect.
[0071] According to an embodiment of the present invention, a fourth aspect of the present invention provides a photovoltaic system, the photovoltaic system comprising the photovoltaic assembly described in the third aspect.
[0072] The scheme of the present invention will be explained below in conjunction with the embodiments. It will be appreciated by those skilled in the art that the following embodiments are only used to illustrate the present invention and should not be considered as limiting the scope of the present invention. Where specific techniques or conditions are not indicated in the embodiments, the techniques or conditions described in the literature in this area or the product specifications are used. The reagents or instruments used are not indicated by the manufacturer and are all conventional products that can be obtained commercially.
[0073] Example 1
[0074] A method for preparing a solar cell comprises the following steps:
[0075] (1) Preparation of bottom battery:
[0076] Using a 200 μm thick n-type single crystal silicon substrate, 8 nm intrinsic amorphous silicon, 10 nm n-type amorphous silicon, and 10 nm p-type amorphous silicon are deposited by CVD, a 10 nm ITO layer is deposited by PVD, and a 70 nm ITO layer is deposited on the back of the substrate;
[0077] (2) Preparation of tandem solar cells: 2PACz is coated and deposited on the front ITO layer, and a perovskite layer is deposited by coating, the composition of which is Cs 0.15 FA 0.85 Pb(I 0.8 Br 0.2 )3, thickness 800nm, 15nm C is formed by thermal evaporation 60 , 20nm tin oxide was prepared by ALD, 50nm ITO was prepared by PVD, 20nm metal Ti was prepared by electron beam evaporation, and 400nm metal silver grid lines were formed by evaporation.
[0078] Example 2
[0079] The difference from Example 1 is that in step (2), 20 nm of metal Cr is prepared by electron beam evaporation.
[0080] Example 3
[0081] The difference from Example 1 is that in step (2), 20 nm of metal Al is prepared by electron beam evaporation.
[0082] Comparative Example 1
[0083] The difference from Example 1 is that the step of preparing 20 nm of metal Ti by electron beam evaporation is not included.
[0084] Test Case
[0085] The photovoltaic performance of the solar cells prepared in the examples and comparative examples was tested, and the specific steps were as follows:
[0086] The battery is placed under the simulated solar spectrum of AM1.5G, and the voltage load applied to the battery is changed to collect the current signal to obtain the IV curve, and the photoelectric parameters are calculated through the IV curve. The stability of the battery is fed back by comparing the data before and after aging.
[0087] Results Figure 4As shown in Table 1, the photoelectric conversion efficiency of the laminated solar cell prepared in Comparative Example 1 is 28%. It can only maintain 40% of the initial efficiency after being heated at 80°C for 1000h in a nitrogen atmosphere, and the silver electrode turns yellow. However, the laminated solar cell prepared in the embodiment can maintain more than 95% of the initial efficiency after being heated at 80°C for 1000h in a nitrogen atmosphere, and the color of the silver electrode remains basically unchanged. This shows that the laminated solar cell prepared in the present invention can ensure photoelectric conversion efficiency and high thermal stability.
[0088] Table 1
[0089] Initial photoelectric conversion efficiency Photoelectric conversion efficiency after heating for 1000h at 80℃ Example 1 27.8% 26.464% Example 2 27.1% 25.9% Example 3 27.3% 26.2% Comparative Example 1 28% 11.2%
[0090] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "example", "specific example", or "some examples" etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art may combine and combine the different embodiments or examples described in this specification and the features of the different embodiments or examples, without contradiction.
[0091] Although the embodiments of the present invention have been shown and described above, it is to be understood that the above embodiments are exemplary and are not to be construed as limitations of the present invention. A person skilled in the art may change, modify, replace and vary the above embodiments within the scope of the present invention.
Claims
1. A solar cell, characterized in that: include: A substrate, a first functional layer, a perovskite layer, a second functional layer, a transparent conductive layer, a first metal electrode layer, and a second metal electrode layer are sequentially stacked; wherein one of the first functional layer and the second functional layer comprises a hole transport layer, and the other comprises an electron transport layer; The material of the first metal electrode layer includes at least one of Ti, Cr, and Al; The material of the second metal electrode layer includes Ag.
2. The solar cell according to claim 1, characterized in that The thickness of the first metal electrode layer is 5nm-100μm; And / or, the thickness of the second metal electrode layer is 2nm-10μm; And / or, the thickness of the perovskite layer is 10-3000 nm.
3. The solar cell according to claim 1, characterized in that The material of the transparent conductive layer includes at least one of titanium dioxide, tin oxide, zinc oxide, zirconium oxide, zinc gallium oxide, zinc aluminum oxide, indium zinc oxide, fluorine-doped tin oxide, indium tin oxide, indium tungsten oxide, indium-doped cadmium oxide, barium stannate, tin titanium oxide, and tin zinc oxide.
4. The solar cell according to claim 1, characterized in that The solar cell further includes a buffer layer, and the buffer layer is arranged between the second functional layer and the transparent conductive layer.
5. The solar cell according to claim 1, characterized in that: The material band gap of the perovskite layer is 1.50-1.75 eV.
6. The solar cell according to claim 1, characterized in that The material of the perovskite layer includes ABX3; wherein A is selected from at least one of FA, MA, Cs or Rb; B is selected from at least one of Pb, Sn or Sr; X is selected from at least one of Br, I and Cl.
7. The solar cell according to claim 1, characterized in that The solar cell is a stacked cell.
8. A method for preparing a solar cell according to any one of claims 1 to 7, characterized in that: include: A substrate is provided, and a first functional layer, a perovskite layer, a second functional layer, a transparent conductive layer, a first metal electrode layer and a second metal electrode layer are sequentially stacked on one surface of the substrate.
9. A photovoltaic module, characterized in that: The photovoltaic module comprises at least one battery string, and the battery string comprises at least two solar cells according to any one of claims 1 to 7.
10. A photovoltaic system, characterized in that: The photovoltaic system comprises the photovoltaic module according to claim 9.