Grinding device

Abstract

The present application provides a kind of grinding device, including grinding pad and grinding table, grinding pad is placed on grinding table, grinding table drives grinding pad synchronous rotation;Wafer to be processed, wafer to be processed needs to carry out the grinding of metal structure;Wafer fixing device, for fixing wafer to be processed;Grinding dresser, grinding dresser includes substrate, substrate is provided with isolation layer and protruding abrasive particles, substrate is also formed with the metal ion supplement structure of the same material of metal structure, it is used for grinding platform to be in idle state or grinding test wafer, to grinding pad is ground to maintain its roughness, and simultaneously grinding metal ion supplement structure generates metal ion;Abrasive nozzle, for spraying grinding fluid and / or pure water.The present application ensures that new metal ions are always generated on the grinding dresser, the overall environment remains consistent, so that the chemical reaction is always in a stable state, and the product piece always maintains a high and stable grinding rate during the grinding process.

Description

Technical Field

[0001] This invention relates to the field of semiconductor technology, and in particular to a grinding apparatus. Background Technology

[0002] In the existing Cu CMP (chemical mechanical planarization) grinding process, the grinding rate is often unstable, which leads to abnormally high or low film thickness in the product. In severe cases, the resistance fails to meet the predetermined quality standard or acceptable range, resulting in product scrap.

[0003] Data analysis revealed that the grinding rate was particularly unstable after the machine was idle (meaning the machine could be used normally, but no products were running and the machine was in an idle state). Even when running test wafers, there were still cases where the grinding rate of the first product was abnormal (the grinding rate of the first to fifth test wafers gradually increased, and the grinding rate tended to stabilize after the sixth wafer).

[0004] To solve the above problems, a new type of grinding device is needed. Summary of the Invention

[0005] In view of the shortcomings of the prior art described above, the purpose of the present invention is to provide a grinding device to solve the problem of unstable grinding rate when the machine is idle in the prior art.

[0006] To achieve the above and other related objectives, the present invention provides a grinding apparatus, comprising:

[0007] A grinding pad and a grinding table, wherein the grinding pad is placed on the grinding table and the grinding table drives the grinding pad to rotate synchronously;

[0008] The wafer to be processed needs to undergo metal structure grinding;

[0009] A wafer fixing device for fixing the wafer to be processed;

[0010] A grinding and dressing disc includes a substrate, on which an isolation layer and protruding abrasive particles are disposed. A metal ion replenishing structure made of the same material as the metal structure is also formed on the substrate. The grinding and dressing disc is used to grind the grinding pad to maintain its roughness when the grinding machine is in an idle state, and to grind the metal ion replenishing structure to generate metal ions at the same time.

[0011] Abrasive nozzles are used to spray abrasive fluid and / or purified water;

[0012] The controller is used to spray pure water onto the grinding pad using the abrasive nozzle for cleaning when the grinding machine is idle or grinding test wafers, and to grind the grinding pad using the grinding dressing disc to maintain its roughness, and simultaneously grind the metal ion supplement structure to generate metal ions.

[0013] Preferably, the material of the metal structure is copper.

[0014] Preferably, the substrate is made of stainless steel.

[0015] Preferably, the material of the insulating layer includes at least one of chromium, nickel, and nickel-palladium alloy.

[0016] Preferably, the material of the abrasive particles is diamond.

[0017] Preferably, the method for forming the metal ion supplementation structure includes: forming a metal layer on the isolation layer, wherein the material of the metal layer is the same as that of the metal structure.

[0018] Preferably, the method for forming the metal ion supplement structure includes: replacing a portion of the material of the grinding particles with the same material as the metal structure.

[0019] As described above, the grinding apparatus of the present invention has the following beneficial effects:

[0020] This invention ensures that new metal ions (such as copper ions) are constantly generated on the grinding and dressing disk when the machine is idle and during the grinding and testing of wafers. The overall environment remains consistent and is not affected by water or grinding fluid cleaning, thus keeping the chemical reaction in a stable state. The product wafer maintains a high and stable grinding rate during the grinding process. Attached Figure Description

[0021] Figure 1 The diagram shown is a schematic diagram of the grinding device of the present invention.

[0022] Figure 2 The diagram shown is a schematic diagram of a grinding and trimming disc structure according to the present invention.

[0023] Figure 3 This is a schematic diagram of another grinding and trimming disc structure according to the present invention;

[0024] Figure 4 The diagram shows a comparison of the Cu CMP grabbing endpoint time between the present invention and the prior art. Detailed Implementation

[0025] The following specific examples illustrate the implementation of the present invention. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention.

[0026] Please see Figure 1 The present invention provides a grinding apparatus, comprising:

[0027] The grinding pad 102 and the grinding table 101 are arranged together. The grinding pad 102 is placed on the grinding table 101, and the grinding table 101 drives the grinding pad 102 to rotate synchronously.

[0028] Wafer 104 to be processed needs to undergo metal structure grinding;

[0029] A wafer fixing device 103 is used to fix the wafer 104 to be processed;

[0030] The grinding and trimming disc 106 includes a substrate 1061, an isolation layer 1062 and protruding abrasive particles 1064 disposed on the substrate 1061. The isolation layer 1062 is disposed on the surface of the substrate 1061 to prevent the substrate 1061 from contaminating the grinding pad 102 during grinding. The abrasive particles 1064 are partially embedded in the isolation layer 1062, and the isolation layer 1062 also serves to fix the abrasive particles 1064. A metal ion supplementation structure made of the same material as the metal structure is also formed on the substrate 1061. This structure is used to grind the grinding pad 102 to maintain its roughness when the grinding machine is idle or when grinding test wafers, and to simultaneously grind the metal ion supplementation structure to generate metal ions.

[0031] In embodiments of the present invention, the material of the metal structure is copper. The metal structure is a portion of the back-end metal interconnect structure that includes copper, and the interconnect structure includes various conductive components to connect various IC devices to the integrated circuit. For example, the interconnect structure includes contacts; metal lines; and through-holes.

[0032] In an embodiment of the present invention, the substrate 1061 is made of stainless steel.

[0033] In an embodiment of the present invention, the material of the isolation layer 1062 includes at least one of chromium, nickel, and nickel-palladium alloy.

[0034] In an embodiment of the present invention, the material of the abrasive particles 1064 is diamond.

[0035] In an embodiment of the present invention, please refer to Figure 2The method for forming the metal ion supplementary structure includes forming a metal layer 1063 on the isolation layer 1062, wherein the material of the metal layer 1063 is the same as that of the metal structure. For example, a copper layer may be formed on the isolation layer 1062.

[0036] In an embodiment of the present invention, please refer to Figure 3 The method for forming the metal ion supplementary structure includes replacing the material of a portion of the abrasive particles 1064 with a material identical to the metal structure to form replacement abrasive particles 1065. For example, the material of a portion of the abrasive particles 1064 can be replaced with copper.

[0037] Abrasive nozzle 105 is used to spray abrasive fluid and / or purified water;

[0038] The controller is used to spray pure water onto the polishing pad 102 using the abrasive nozzle 105 for cleaning when the polishing machine is idle or when polishing test wafers. The polishing dressing disc 106 polishes the polishing pad 102 to maintain its roughness and simultaneously grinds metal ions to replenish the metal ions generated in the structure. This ensures that new metal ions (such as copper ions) are always generated on the polishing dressing disc 106 when the machine is idle or during the polishing test wafer process. The overall environment remains consistent and is not affected by water and polishing fluid cleaning, so that the chemical reaction is always in a stable state and the product wafer maintains a high and stable polishing rate during the polishing process.

[0039] The controller may include:

[0040] Memory, used to store computer programs;

[0041] The processor, when executing a program stored in memory, implements the steps of the above-described mobile application debugging method.

[0042] Furthermore, the aforementioned electronic devices may also include a communication bus and / or a communication interface, through which the processor, communication interface, and memory communicate with each other. The communication bus mentioned in the above electronic devices can be a Peripheral Component Interconnect (PCI) bus or an Extended Industry Standard Architecture (EISA) bus, etc. This communication bus can be divided into address bus, data bus, control bus, etc. For ease of illustration, only one thick line is used to represent it in the figure, but this does not indicate that there is only one bus or one type of bus.

[0043] The communication interface is used for communication between the aforementioned electronic devices and other devices.

[0044] The memory may include random access memory (RAM) or non-volatile memory (NVM), such as at least one disk storage device. Optionally, the memory may also be at least one storage device located remotely from the aforementioned processor.

[0045] The processors mentioned above can be general-purpose processors, including central processing units (CPUs), network processors (NPs), etc.; they can also be digital signal processors (DSPs), application-specific integrated circuits (ASICs), field-programmable gate arrays (FPGAs), or other programmable logic devices, discrete gate or transistor logic devices, or discrete hardware components.

[0046] In another embodiment provided in this application, a computer-readable storage medium is also provided, which stores a computer program that, when executed by a processor, implements the steps of the debugging method of any of the above-described mobile applications.

[0047] In another embodiment provided in this application, a computer program product containing instructions is also provided, which, when run on a computer, causes the computer to execute the debugging method of any of the mobile applications described above.

[0048] In the above embodiments, implementation can be achieved entirely or partially through software, hardware, firmware, or any combination thereof. When implemented using software, it can be implemented entirely or partially in the form of a computer program product. The computer program product includes one or more computer instructions. When the computer program instructions are loaded and executed on a computer, all or part of the processes or functions described in the embodiments of this application are generated. The computer can be a general-purpose computer, a special-purpose computer, a computer network, or other programmable device. The computer instructions can be stored in a computer-readable storage medium or transmitted from one computer-readable storage medium to another. For example, the computer instructions can be transmitted from one website, computer, server, or data center to another website, computer, server, or data center via wired (e.g., coaxial cable, fiber optic, digital subscriber line (DSL)) or wireless (e.g., infrared, wireless, microwave, etc.) means. The computer-readable storage medium can be any available medium that a computer can access or a data storage device such as a server or data center that integrates one or more available media. The available medium can be a magnetic medium (e.g., floppy disk, hard disk, magnetic tape), an optical medium (e.g., DVD), or a solid-state drive (SSD), etc.

[0049] Please refer to 4. By comparing the difference in the end time of grinding the copper layer of the product sheet in the idle state of the machine without copper ions and in the environment with copper ions, it can be seen that the grinding rate is higher and more stable in the environment with copper ions, which is conducive to the precise control of the product film thickness and greatly helps the product to pass the shipment stably.

[0050] It should be noted that the illustrations provided in this embodiment are only schematic representations of the basic concept of the present invention. Therefore, the drawings only show the components related to the present invention and are not drawn according to the actual number, shape and size of the components in the actual implementation. In the actual implementation, the form, quantity and proportion of each component can be arbitrarily changed, and the layout of the components may also be more complex.

[0051] In summary, this invention ensures that new metal ions (e.g., copper ions) are continuously generated on the grinding and dressing disk when the machine is idle and during the grinding and testing of wafers. The overall environment remains consistent and is unaffected by water or grinding fluid cleaning, thus maintaining a stable chemical reaction and ensuring that the product wafer maintains a high and stable grinding rate throughout the grinding process. Therefore, this invention effectively overcomes the various shortcomings of existing technologies and has high industrial applicability.

[0052] The above embodiments are merely illustrative of the principles and effects of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by those skilled in the art without departing from the spirit and technical concept disclosed in the present invention should still be covered by the claims of the present invention.

Claims

1. A grinding apparatus, characterized in that, include: A grinding pad and a grinding table, wherein the grinding pad is placed on the grinding table and the grinding table drives the grinding pad to rotate synchronously; The wafer to be processed needs to undergo metal structure grinding; A wafer fixing device for fixing the wafer to be processed; A grinding and trimming pad includes a substrate, on which an isolation layer and protruding abrasive particles are disposed. A metal ion supplementing structure made of the same material as the metal structure is also formed on the substrate. The grinding pad is used to grind the grinding pad to maintain its roughness when the grinding machine is idle or when grinding test wafers, and to grind the metal ion supplementing structure to generate metal ions at the same time. Abrasive nozzles are used to spray abrasive fluid and / or purified water; The controller is used to spray pure water onto the grinding pad using the abrasive nozzle for cleaning when the grinding machine is idle or grinding test wafers, and to grind the grinding pad using the grinding dressing disc to maintain its roughness, and simultaneously grind the metal ion supplement structure to generate metal ions.

2. The grinding apparatus according to claim 1, characterized in that: The material of the metal structure is copper.

3. The grinding apparatus according to claim 1, characterized in that: The substrate is made of stainless steel.

4. The grinding apparatus according to claim 1, characterized in that: The material of the insulating layer includes at least one of chromium, nickel, and nickel-palladium alloy.

5. The grinding apparatus according to claim 1, characterized in that: The abrasive particles are made of diamond.

6. The grinding apparatus according to claim 1, characterized in that: The method for forming the metal ion supplementary structure includes: forming a metal layer on the isolation layer, wherein the material of the metal layer is the same as that of the metal structure.

7. The grinding apparatus according to claim 1, characterized in that: The method for forming the metal ion supplementary structure includes: replacing part of the material of the grinding particles with the same material as the metal structure.

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