A photoresist precursor composition and related products, and a photoresist pattern forming method

Abstract

The present invention provides a photoresist precursor composition, related products, and a method for forming a photoresist pattern, belonging to the field of photoresist technology. The photoresist precursor composition comprises monomers, an initiator, and a solvent, wherein the monomers comprise Class A monomers, Class B monomers, Class C monomers, and Class D monomers. A novel photoresist resin can be formed by free radical polymerization using the monomers. The photoresist produced from the photoresist resin exhibits excellent photocuring properties and can achieve higher photolithographic resolution.

Description

Technical Field

[0001] The invention belongs to the technical field of photoresists and relates to a photoresist precursor composition and related products, and a photoresist pattern forming method. Background Art

[0002] Photoresist, also known as photoresist, is a material that changes its solubility or resistance to etching through exposure to ultraviolet light, electron beams, ion beams, X-rays, or other radiation. Typically, photoresists are composed of three main components: a photosensitive resin, a sensitizer, and a solvent. Based on the image format, photoresists are divided into two main categories: positive and negative. Positive photoresists dissolve the exposed portion while the unexposed portion remains, while negative photoresists retain the exposed portion while the unexposed portion dissolves. To produce fine patterns, shortening the wavelength of the exposure light source (increasing its energy) is generally employed. Specifically, while ultraviolet light, represented by g-rays and i-rays, is used in the prior art, KrF excimer lasers or ArF excimer lasers are now being used for mass production of semiconductor devices. Furthermore, research is also underway into extreme ultraviolet (EUV) and X-rays.

[0003] Chinese patent application 202010460924.5 provides a photoresist composition and a preparation method thereof, comprising a phenolic resin composition, a photosensitive compound, and an organic solvent. The phenolic resin composition comprises: a first linear phenolic resin, a second linear phenolic resin, and a third linear phenolic resin. The first linear phenolic resin has a high sensitivity, while the second and third linear phenolic resins have a high heat resistance. The three phenolic resins work synergistically to impart a high heat resistance to the photoresist composition while also exhibiting high sensitivity.

[0004] Chinese patent application 200410076928.4 discloses a sulfonamide compound, a polymer compound, a resist material, and a pattern formation method. The sulfonamide compound exhibits excellent transmittance at exposure wavelengths ≤ 300 nm, excellent substrate adhesion, and excellent surface solubility. However, conventional photoresists often have complex compositions, increasing the likelihood of impurities being introduced. Summary of the Invention

[0005] In view of this, an object of the present invention is to provide a photoresist with simple chemical composition and high lithographic resolution.

[0006] To achieve the above-mentioned object of the invention, in one aspect, the present invention provides a photoresist precursor composition, which is composed of a monomer, an initiator and a solvent;

[0007] The monomers are composed of type A monomers, type B monomers, type C monomers and type D monomers;

[0008] The type A monomer is selected from at least one of (1,1,1,3,3,3-hexafluoroisopropyl) methacrylate, trifluoroethyl methacrylate, (3,3,4,4,4-pentafluoro-n-butyl) methacrylate, and 3,3,3-trifluoro-2-methylpropyl methacrylate;

[0009] The type B monomer is at least one selected from 1-(methoxymethyl)cyclopentyl methacrylate, (1-(adamantan-1-yl)cyclopentyl) methacrylate, and 1-isopropylcyclopentyl methacrylate;

[0010] The C-type monomer is selected from at least one of (3-hydroxy-2,2,4,4-tetramethylcyclobutyl) methacrylate and (3,3-dimethyl-1-ethylcyclobutyl) methacrylate;

[0011] The D-type monomer is (2-(9-fluorenylmethoxycarbonylamino)ethyl) methacrylate;

[0012] The initiator is a free radical photoinitiator;

[0013] The solvent is selected from at least one of methyl ethyl ketone, cyclopentanone and cyclohexanone.

[0014] The Chinese chemical names and corresponding chemical structural formulas of the above monomers are shown in Table 1.

[0015] Table 1

[0016]

[0017]

[0018] Preferably, the molar ratio of the monomer to the initiator is 1:0.01-0.1. More preferably, the molar ratio of the monomer to the initiator is 1:0.05.

[0019] Preferably, the mass of the solvent is 2.5-3.5 times the total mass of the monomer and the initiator.

[0020] Preferably, the molar ratio of the type A monomer, the type B monomer, the type C monomer and the type D monomer is 0.2-0.25: 0.25-0.32: 0.3-0.35: 0.13-0.2.

[0021] More preferably, the molar ratio of the type A monomer, the type B monomer, the type C monomer and the type D monomer is 0.23:0.3:0.32:0.15.

[0022] Preferably, the ratio of the total molar number of fluorine atoms in the Class A monomers to the total molar number of the monomers is 0.12-1.2:1; more preferably, 0.69-1.15:1; and even more preferably, 0.8-1.09:1. As a preferred embodiment of the present invention, the ratio of the total molar number of fluorine atoms in the Class A monomers to the total molar number of the monomers is 0.85:1.

[0023] Here, "the monomers" are monomers in the entire photoresist precursor composition "consisting of monomers, initiators and solvents". In the present invention, "the monomers" are composed of Class A monomers, Class B monomers, Class C monomers and Class D monomers.

[0024] Preferably, the Class A monomer is a mixture of (3,3,4,4,4-pentafluoro-n-butyl) methacrylate and 3,3,3-trifluoro-2-methylpropyl methacrylate; the Class B monomer is (1-(adamantan-1-yl) cyclopentyl) methacrylate; and the Class C monomer is (3-hydroxy-2,2,4,4-tetramethylcyclobutyl) methacrylate.

[0025] More preferably, the molar ratio of the (3,3,4,4,4-pentafluoro-n-butyl)methacrylate, the 3,3,3-trifluoro-2-methylpropyl methacrylate, the (1-(adamantan-1-yl)cyclopentyl)methacrylate, the (3-hydroxy-2,2,4,4-tetramethylcyclobutyl)methacrylate and the (2-(9-fluorenylmethoxycarbonylamino)ethyl)methacrylate is 0.08:0.15:0.3:0.32:0.15.

[0026] Preferably, the initiator is selected from at least one of azobisisobutyronitrile, azobisisoheptanenitrile and dimethyl azobisisobutyrate.

[0027] More preferably, and as an example of the present invention, the initiator is azobisisobutyronitrile.

[0028] Preferably, the solvent is methyl ethyl ketone.

[0029] In another aspect, the present invention provides a photoresist resin prepared from the above-mentioned photoresist precursor composition.

[0030] Preferably, the photoresist resin has a type A repeating unit, a type B repeating unit, a type C repeating unit and a type D repeating unit;

[0031] The type A repeating unit is selected from one or more of the following structures

[0032]

[0033] The B-type repeating unit is selected from one or more of the following structures

[0034]

[0035] The C-type repeating unit is selected from one or more of the following structures

[0036]

[0037] The D-type repeating unit has the following structure

[0038]

[0039] The photoresist resin provided by the present invention comprises a Class A repeating unit having a fluorine-containing chain group, which increases the flexibility and transmittance of the photoresist material; a Class B repeating group and a Class C repeating group having a five-membered ring or four-membered ring structure with structural tension, which can generate free radicals under light excitation; and a Class D group having a photobase structure, which can expose amino groups under light excitation, making the photoresist more uniform. These four repeating units work synergistically during the photolithography process of the photoresist resin, enabling rapid and high-resolution photocuring.

[0040] Preferably, the molar ratio of the type A repeating unit, the type B repeating unit, the type C repeating unit and the type D repeating unit is 1-2:6-12:6-13:2-3.

[0041] Preferably, the type A repeating unit is The B-type repeating unit is The C-type repeating unit is The D-type repeating unit is

[0042] More preferably, the described described

[0043] described and stated

[0044] The molar ratio is 1:2:4:6:2.

[0045] On the other hand, the present invention provides a method for preparing the above-mentioned photoresist resin, comprising the following steps: mixing monomers, initiators, and solvents, performing reflux reaction overnight under inert gas protection, precipitating, and washing to obtain the photoresist resin.

[0046] Preferably, the inert gas is selected from nitrogen, argon and carbon dioxide.

[0047] Preferably, the precipitation is specifically carried out by cooling the mixture obtained by the reaction to room temperature, mixing it with 25-50 times the mass of the organic precipitation solution, filtering it, redissolving it in 0.1-1 times the mass of methyl ethyl ketone, mixing it with the organic precipitation solution again, and filtering it.

[0048] More preferably, the organic precipitating liquid is selected from at least one of methanol, n-hexane and cyclohexane.

[0049] Preferably, the washing detergent is selected from at least one of methanol, n-hexane and cyclohexane.

[0050] More preferably, the washing is followed by drying.

[0051] In another aspect, the present invention provides a photoresist composition comprising the above-mentioned photoresist resin.

[0052] Preferably, the photoresist composition comprises a photoresist resin, an acid generator and a solvent, wherein the photoresist resin is the above-mentioned photoresist resin or the photoresist resin prepared by the above-mentioned preparation method.

[0053] The acid generator includes an onium salt-based acid generator such as an iodonium salt or a sulfonium salt, and an acid generator based on an oxime sulfonate; an acid generator based on diazomethane, such as dialkyl or diarylsulfonyldiazomethane and poly (disulfonyl)diazomethane; an acid generator based on nitrobenzylsulfonate, an acid generator based on iminosulfonate, and an acid generator based on disulfone. Among them, an onium salt-based acid generator is preferably used, typically triphenylsulfonium trifluoromethanesulfonate.

[0054] The solvents include polyols, such as ethylene glycol, propylene glycol, dipropylene glycol, etc.; lactones, such as γ-butyrolactone; ketones, such as acetone, methyl ethyl ketone, cyclohexanone, methyl isoamyl ketone, etc.; compounds with ester bonds, such as ethylene glycol monoacetate, diethylene glycol monoacetate, propylene glycol monoacetate, dipropylene glycol monoacetate, etc.; polyol derivatives, such as propylene glycol monomethyl ether acetate (PGMEA), propylene glycol monomethyl ether (PGME), ethylene glycol monoacetate, propylene glycol monomethyl ether (PGME), propylene glycol monoacetate, ... tert-butyl ether, etc.; esters such as methyl methoxypropionate, methyl acetate, ethyl acetate, butyl acetate, methyl pyruvate, ethyl pyruvate, ethyl ethoxypropionate, methyl lactate, ethyl lactate, etc.; aromatic organic solvents such as anisole, ethyl benzyl ether, cresol methyl ether, diphenyl ether, dibenzyl ether, phenethyl ether, butylphenyl ether, ethylbenzene, diethylbenzene, pentylbenzene, isopropylbenzene, toluene, xylene, cymene, mesitylene, dimethyl sulfoxide, etc. Preferably, at least one of propylene glycol methyl ether acetate, propylene glycol dimethyl ether, γ-butyrolactone, and ethylene glycol tert-butyl ether is used.

[0055] Furthermore, the photoresist further includes auxiliary materials, and the auxiliary materials are selected from at least one of alkali, developer, leveling agent, inorganic salt, and surfactant.

[0056] Preferably, the photoresist consists of the following components:

[0057] The above-mentioned photoresist resin, solvent, acid generator and base.

[0058] Wherein, the photoresist resin has a type A repeating unit, a type B repeating unit, a type C repeating unit and a type D repeating unit;

[0059] The type A repeating unit is selected from one or more of the following structures

[0060]

[0061] The B-type repeating unit is selected from one or more of the following structures:

[0062]

[0063] The C-type repeating unit is selected from one or more of the following structures:

[0064]

[0065] The D-type repeating unit has the following structure:

[0066]

[0067] The solvent is preferably at least one of propylene glycol methyl ether acetate, propylene glycol dimethyl ether, γ-butyrolactone, and ethylene glycol tert-butyl ether.

[0068] The acid generator is triphenylsulfonate trifluoromethanesulfonate.

[0069] The base is phosphatidylcholine.

[0070] More preferably, the mass ratio of the photoresist resin, solvent, acid generator and base is 0.04-0.2:0.8-0.99:0.001-0.03:0.001-0.01.

[0071] More preferably, and as an example of the present invention, the mass ratio of the photoresist resin, the solvent, the acid generator and the base is 0.05-0.15: 0.9-0.97: 0.001-0.03: 0.003-0.006.

[0072] In a final aspect, the present invention provides a method for forming a photoresist pattern, comprising the steps of preparing a photoresist film using the prepared photoresist composition, exposing the photoresist film, and developing the photoresist film to form a photoresist pattern.

[0073] Preferably, the exposure light is KrF laser, ArF laser, F2 laser, Kr2 laser, KrAr laser or Ar2 laser.

[0074] Compared with the prior art, the present invention has the following beneficial effects:

[0075] The present invention provides a photoresist precursor composition, which can be used to prepare a photoresist resin with a special structure through polymerization reaction. The photoresist prepared by using the photoresist resin has excellent resolution and line edge roughness. DETAILED DESCRIPTION

[0076] Terms and Claims of the Present Invention:

[0077] 1. The articles "a", "an" and "the" include plural referents unless expressly limited to one or more referents otherwise.

[0078] 2. Numerical ranges: Unless expressly stated otherwise, all ranges or ratios disclosed herein are to be understood to include any and all subranges or subratios contained therein. For example, a range or ratio stated as 1 to 30 is to be considered inclusive of any and all subranges or subratios, integers, decimals, or subranges or subratios comprised therein, between a minimum of 1 and a maximum of 30, including any subranges or subratios, integers, decimals, or subranges or subratios comprised therein.

[0079] The following non-limiting examples are provided to enable those skilled in the art to more fully understand the present invention, but are not intended to limit the present invention in any way. The following are merely illustrative of the scope of the present invention, and those skilled in the art may make various changes and modifications to the present invention based on the disclosed content, which should also fall within the scope of the present invention.

[0080] The present invention will be further described below by way of specific examples. The various chemical reagents used in the examples of the present invention were obtained through conventional commercial channels unless otherwise specified. Unless otherwise specified, the contents described below are all by weight. Unless otherwise specified, it is understood that the experiments were conducted at room temperature.

[0081] In the following examples, 3,3,4,4,4-pentafluoro-n-butyl methacrylate was obtained from Debye Scientific Co. Ltd., 1-(methoxymethyl)cyclopentyl methacrylate was obtained from Hong Kong Chemhere Co. Ltd., and azobisisobutyronitrile was obtained from Aldrich Chemical Co. Ltd. All other starting materials were commercially available or synthesized using known procedures.

[0082] Examples 1.1-1.3: Photoresist precursor compositions, the types and amounts of the raw materials are shown in Table 2.

[0083] Table 2

[0084]

[0085]

[0086] Examples 2-5: Photoresist precursor compositions, the types and amounts of raw materials thereof are shown in Table 3.

[0087] Table 3

[0088]

[0089]

[0090] Examples 6 to 10 provide photoresist precursor compositions, the types and amounts of raw materials thereof are shown in Table 4.

[0091] Table 4

[0092]

[0093]

[0094] Comparative Examples 1-5 provide photoresist precursor compositions, the types and amounts of raw materials thereof are shown in Table 5.

[0095] Table 5

[0096]

[0097]

[0098] Example 11

[0099] A method for preparing a photoresist resin.

[0100] The photoresist precursor compositions provided in Examples 1.1, 1.2, 1.3, Examples 2-10, and Comparative Examples 1-5 were scaled down to 1 / 50 (monomer 20 mmol, initiator 2.5 mmol, solvent 20 mL), mixed and added to a flask, sealed, and oxygen in the system was removed three times using a Schlenk tube connected to a nitrogen gas cylinder and a vacuum pump. Finally, the internal atmosphere of the flask was nitrogen. The mixture was placed in an oil bath, heated under reflux overnight, cooled to room temperature, and precipitated with 500-600 mL of n-hexane. The mixture was filtered to obtain a solid product. The solid was placed in a flask, dissolved in a small amount of methyl ethyl ketone, and the n-hexane precipitation-filtration step was repeated twice. Vacuum drying was performed overnight to obtain a photoresist resin.

[0101] Measured on a 400 MHz NMR spectrometer 1 HNMR, 13 CNMR and 17 FNMR spectra, inversion-gated in deuterated acetone using chromium acetylacetonate as a relaxation agent13 The structure of the photoresist resin product was determined by CNMR spectrum. The number average molecular weight Mn of the polymer was determined by size exclusion chromatography.

[0102] The composition and molecular weight of the photoresist resins prepared in Examples 1.1, 1.2, 1.3, Examples 2-10, and Comparative Examples 1-5 according to the preparation method of Example 11 are shown in Table 6.

[0103] Table 6

[0104]

[0105]

[0106] Example 12

[0107] Preparation of photoresist

[0108] The photoresist resins prepared according to the preparation method of Example 11 in Examples 1.1, 1.2, 1.3, Examples 2-10, and Comparative Examples 1-5 were respectively configured into photoresists according to the following formula: 5 g of photoresist resin, 0.02 g of triphenylsulfonium trifluoromethanesulfonate, 0.003 g of phosphatidylcholine, 30 g of propylene glycol methyl ether acetate, and 65 g of propylene glycol methyl ether.

[0109] Comparative Example 6

[0110] The photoresist provided in Example 1 of the prior art CN117784519A is:

[0111] A photoresist, comprising, by mass percentage:

[0112] 51% acrylate, 12% ethyl acetate, 8% isophorone, 5% calcium carbonate (particle size 0.4 μm), 15% barium sulfate (particle size 1.3 μm), 3% photoinitiator 907, 1% photosensitizer ITX and 5% dimethicone.

[0113] Comparative Example 7

[0114] The photoresist provided in the first embodiment of the prior art CN1611490A is:

[0115] Base resin: A resin formed by the polymerization of the first unit and the second unit.

[0116] Unit 1:

[0117]

[0118] Unit 2:

[0119]

[0120] Acid generator: triphenylsulfonium trifluoromethanesulfonate (2% by weight of the base resin).

[0121] Solvent: Propylene glycol monomethyl ether acetate.

[0122] Effect evaluation

[0123] The post-lithography resolution and other properties of the photoresists in Example 12, Comparative Example 6, and Comparative Example 7 were evaluated.

[0124] (1) The photoresists prepared in Example 12, Comparative Example 6, and Comparative Example 7 were uniformly coated on a silicon wafer using a spin coating method to form thin films of different thicknesses (100 nm, 500 nm).

[0125] (2) Thereafter, pre-baking (PAB) is performed at 90-130° C. (the actual baking temperature is 110° C.) for 1-2 minutes (the actual baking time is 1.5 minutes), thereby forming a resist film.

[0126] (3) The resist film can be exposed by dry exposure in the atmosphere or in an inert gas such as nitrogen, or by immersion lithography. Examples of exposure apparatus include KrF exposure apparatus, ArF exposure apparatus, electron beam lithography apparatus, and EUV exposure apparatus. The exposure wavelength is not particularly limited, and KrF excimer laser, ArF excimer laser, extreme ultraviolet (EUV), and electron beam (EB) can be used.

[0127] The experiment used an immersion ArF exposure device (ASML XT1900Gi, NA = 1.35) and ultrapure water as the immersion medium.

[0128] (4) Then, the product is baked at 80-130°C (the actual baking temperature is 105°C) for 40 seconds to 5 minutes (the actual baking time is 1.5 minutes) for post-exposure baking (PEB) treatment.

[0129] (5) Develop in a 35% (v / v) acetone aqueous solution of tetraethylammonium hydroxide (the mass percentage concentration of tetraethylammonium hydroxide in the entire solution is 1.9%) for 0.5-3 minutes (the actual development time is 2 minutes) to form a resist pattern

[0130] Finally, the patterned wafer was observed using a top-down scanning electron microscope (TD-SEM).

[0131] The optimal exposure is defined as the exposure (μC / cm 2), which provides 1:1 resolution at the top and bottom of a 200nm, 1:1 line and space pattern. The maximum resolution of the photoresist is defined as the minimum line width of the L / S pattern that can be distinguished and separated under optimal exposure. The line edge roughness (LER) of the 100nm L / S pattern was evaluated by SEM. The rectangular shape of the pattern outline was determined by visual inspection.

[0132] The experimental results for 100 nm thick films are shown in Table 7.

[0133] Table 7

[0134]

[0135]

[0136] The experimental results of 500nm thick film are shown in Table 8:

[0137] Table 8

[0138] Group Maximum resolution (nm) Line edge roughness (nm) Pattern outline Example 1.1 51 4.9 rectangle Example 1.2 51 4.9 rectangle Example 1.3 51 4.8 rectangle Example 2 52 5.2 rectangle Example 3 53 5.1 rectangle Example 4 53 5.1 rectangle Example 5 53 5.1 rectangle Example 6 55 5.1 rectangle Example 7 54 5.2 rectangle Example 8 54 5.3 rectangle Example 9 54 5.3 rectangle Example 10 55 5.6 rectangle Comparative Example 1 99 8.5 Incomplete Comparative Example 2 94 8.8 Incomplete Comparative Example 3 98 9.7 Incomplete Comparative Example 4 140 9.4 Incomplete Comparative Example 5 96 9.6 Incomplete Comparative Example 6 90 9.9 Incomplete Comparative Example 7 162 9.8 Incomplete

[0139] It can be seen that, compared with the comparative examples, the resolution and line edge roughness of the photoresist after exposure are significantly improved in each embodiment.

[0140] Finally, it should be noted that the above content is only used to illustrate the technical solution of the present invention, rather than to limit the scope of protection of the present invention. Simple modifications or equivalent substitutions of the technical solution of the present invention by ordinary technicians in this field do not deviate from the essence and scope of the technical solution of the present invention.

Claims

1. A photoresist precursor composition, characterized in that It is composed of monomers, initiators and solvents; The monomers are composed of type A monomers, type B monomers, type C monomers and type D monomers; The type A monomer is selected from at least one of (1,1,1,3,3,3-hexafluoroisopropyl) methacrylate, trifluoroethyl methacrylate, (3,3,4,4,4-pentafluoro-n-butyl) methacrylate, and 3,3,3-trifluoro-2-methylpropyl methacrylate; The type B monomer is at least one selected from 1-(methoxymethyl)cyclopentyl methacrylate, (1-(adamantan-1-yl)cyclopentyl) methacrylate, and 1-isopropylcyclopentyl methacrylate; The C-type monomer is selected from at least one of (3-hydroxy-2,2,4,4-tetramethylcyclobutyl) methacrylate and (3,3-dimethyl-1-ethylcyclobutyl) methacrylate; The D-type monomer (2-(9-fluorenylmethoxycarbonylamino)ethyl) methacrylate; The initiator is a free radical photoinitiator; The solvent is selected from at least one of methyl ethyl ketone, cyclopentanone and cyclohexanone.

2. The photoresist precursor composition according to claim 1, wherein The molar ratio of the monomer to the initiator is 1:0.01-0.1, and the mass of the solvent is 2.5-3.5 times the total mass of the monomer and the initiator.

3. The photoresist precursor composition according to claim 1, wherein The molar ratio of the Class A monomer, the Class B monomer, the Class C monomer and the Class D monomer is 0.2-0.25:0.25-0.32:0.3-0.35:0.13-0.2; the ratio of the total molar number of fluorine atoms in the Class A monomer to the total molar number of the monomers is 0.12-1.2:

1.

4. The photoresist precursor composition according to claim 1, characterized in that The Class A monomer is a mixture of (3,3,4,4,4-pentafluoro-n-butyl) methacrylate and 3,3,3-trifluoro-2-methylpropyl methacrylate; the Class B monomer is (1-(adamantan-1-yl) cyclopentyl) methacrylate; and the Class C monomer is (3-hydroxy-2,2,4,4-tetramethylcyclobutyl) methacrylate.

5. The photoresist precursor composition according to claim 4, characterized in that The molar ratio of the (3,3,4,4,4-pentafluoro-n-butyl) methacrylate, the 3,3,3-trifluoro-2-methylpropyl methacrylate, the (1-(adamantan-1-yl)cyclopentyl) methacrylate, the (3-hydroxy-2,2,4,4-tetramethylcyclobutyl) methacrylate and the (2-(9-fluorenylmethoxycarbonylamino)ethyl) methacrylate is 0.08:0.15:0.3:0.32:0.

15.

6. The photoresist precursor composition according to claim 1, characterized in that The initiator is at least one of azobisisobutyronitrile, azobisisoheptanenitrile and dimethyl azobisisobutyrate; and the solvent is methyl ethyl ketone.

7. A photoresist resin, characterized in that Made from the photoresist precursor composition according to any one of claims 1 to 6.

8. The photoresist resin according to claim 7, characterized in that The photoresist resin has a type A repeating unit, a type B repeating unit, a type C repeating unit and a type D repeating unit; The type A repeating unit is selected from one or more of the following structures The B-type repeating unit is selected from one or more of the following structures The C-type repeating unit is selected from one or more of the following structures The D-type repeating unit has the following structure 9. The photoresist resin according to any one of claims 7 to 8, characterized in that: The molar ratio of the type A repeating unit, the type B repeating unit, the type C repeating unit and the type D repeating unit is 1-2:6-12:6-13:2-3.

10. The photoresist resin according to claim 9, characterized in that The type A repeating unit is The B-type repeating unit is The C-type repeating unit is The D-type repeating unit is 11. The photoresist resin according to claim 10, characterized in that described described described described and stated The molar ratio is 1:2:4:6:

2.

12. A photoresist composition, characterized in that The photoresist resin comprises the photoresist resin according to any one of claims 6 to 10.

13. A method for forming a photoresist pattern, characterized in that: The method comprises the steps of preparing a photoresist film using the photoresist composition prepared according to claim 12, exposing the photoresist film to light, and developing the photoresist film to form a photoresist pattern.

14. The method for forming a photoresist pattern according to claim 13, wherein: The exposure light is KrF laser, ArF laser, F2 laser, Kr2 laser, KrAr laser or Ar2 laser.

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