Optimization Method, Device and Storage Medium for IK Impact Resistance Performance of Charging Piles

Abstract

The present application relates to a method, device and storage medium for optimizing the IK impact resistance performance of a charging pile. Among them, the method for optimizing the IK impact resistance performance of the charging pile includes: calculating the bending and torsional stiffness of the charging pile; based on the bending and torsional stiffness of the charging pile, setting each IK impact center point on the charging pile according to a preset bending and torsional stiffness change gradient; determining each radiation point corresponding to each IK impact center point based on each IK impact center point, and recording the coordinates of each IK impact center point and the coordinates of each radiation point; performing an IK impact resistance test on the charging pile according to the coordinates of each IK impact center point and the coordinates of each radiation point to obtain the mechanical property data of the charging pile; predicting the risk area of the mechanical property data of the charging pile to obtain the high-risk area of the charging pile; performing an optimization design on the bending and torsional stiffness of the high-risk area of the charging pile to convert the high-risk area into a low-risk area, and obtaining the optimized charging pile structure, thereby solving the problems of high cost and low efficiency in optimizing the IK impact resistance performance of the charging pile.

Description

Technical Field

[0001] The present application relates to the field of charging pile simulation technology, and in particular to a method, device and storage medium for optimizing the anti-IK impact performance of a charging pile. Background Art

[0002] Charging piles that match new energy vehicles have ushered in rapid development under the background of national infrastructure construction. In daily work, charging piles are sometimes impacted by hard objects (such as talc, bricks), and the outer shell or internal components of the charging pile are likely to be damaged by the impact, causing the IP protection performance of the charging pile structure to be damaged, thereby affecting the overall structural sealing protection performance of the charging pile, and the electrical performance cannot work normally. Therefore, IK impact performance evaluation is a mandatory requirement of the corresponding national standards and regulations that must be met before charging pile products are put on the market.

[0003] IK impact technology is applicable to the environmental adaptability evaluation of electronic and electrical products and is used to assess the robustness of electronic and electrical products. The ability of charging piles to resist IK impact is an important indicator of their safety and riot-proof performance. The IK impact resistance level is a hard requirement for whether they can be put on the market for sale. Before they can be put on the market for sale, they must meet the minimum national standards of the country where they are sold. For charging pile equipment, especially fixed charging equipment and mobile charging equipment, the higher the IK impact resistance level, the stronger the market competitiveness of the equipment.

[0004] At present, charging pile products need to pass IK impact regulations certification and obtain the corresponding IK impact resistance certification before they can be put on the market. However, due to the differences in test personnel and operating methods, the test results are usually not very consistent, and the guidance for product improvement design is poor. On the one hand, a lot of manpower and material resources are wasted, and ideal test results are not obtained; on the other hand, if the product does not meet the standards after the test, the R&D personnel will optimize it again and make a prototype for drop test. This will not only prolong the R&D cycle, but also waste a lot of materials and increase R&D costs. After the certification is passed, there may be a potential IK anti-riot product quality risk due to the limited number of certification test samples and limited IK impact points. Large-scale products on the market will also have the risk of increased after-sales costs.

[0005] With regard to the problems of high cost and low efficiency in optimizing the anti-IK impact performance of charging piles in related technologies, no effective solution has been proposed so far. Summary of the invention

[0006] In this embodiment, a method, device and storage medium for optimizing the anti-IK impact performance of a charging pile are provided to solve the problem of high cost and low efficiency in optimizing the anti-IK impact performance of a charging pile in the related art.

[0007] In the first aspect, a method for optimizing the anti-IK impact performance of a charging pile is provided in this embodiment, comprising:

[0008] Calculate the flexural-torsional stiffness of the charging pile;

[0009] Based on the flexural-torsional stiffness of the charging pile, set each IK impact center point on the charging pile according to a preset flexural-torsional stiffness change gradient;

[0010] Based on each IK impact center point, determine each radiation point corresponding to each IK impact center point, and record the coordinates of each IK impact center point and the coordinates of each radiation point, where each IK impact center point is the center of the circle where each radiation point is located;

[0011] According to the coordinates of each IK impact center point and the coordinates of each radiation point, conduct an anti-IK impact test on the charging pile to obtain the mechanical property data of the charging pile;

[0012] Perform risk area prediction on the mechanical property data of the charging pile to obtain the high-risk area of the charging pile;

[0013] Conduct flexural-torsional stiffness optimization design on the high-risk area of the charging pile to convert the high-risk area into a low-risk area, and obtain the optimized structure of the charging pile.

[0014] In some embodiments, the calculating the flexural-torsional stiffness of the charging pile includes:

[0015] Combined with the material constitutive model of the charging pile, based on the material damage criterion, calculate the flexural-torsional stiffness of the charging pile by the finite element simulation method; wherein, the material constitutive model of the charging pile includes strain rate plastic hardening parameters, creep aging performance parameters and different temperature performance parameters.

[0016] In some embodiments, the determining each radiation point corresponding to each IK impact center point based on each IK impact center point includes:

[0017] Taking each IK impact center point as the center of the circle, radiate outward with a preset radiation length as the radius to form a radiation layer until the radiation layer of the current IK impact center point overlaps with the radiation layer of the adjacent IK impact center point, and stop radiating to obtain each radiation layer corresponding to each IK impact center point;

[0018] Obtain a preset number of radiation points on each radiation layer corresponding to each IK impact center point to obtain each radiation point corresponding to each IK impact center point.

[0019] In some embodiments, the mechanical property data of the charging pile includes: the stress field, strain field and damage data of the charging pile.

[0020] In some of these embodiments, predicting the risk area of the mechanical property data of the charging pile to obtain the high-risk area of the charging pile includes:

[0021] Establish a genetic algorithm model based on the IK impact low-risk evaluation index and high-risk evaluation index of the charging pile;

[0022] Input the mechanical property data of the charging pile into the genetic algorithm model for risk area prediction to obtain the high-risk area of the charging pile.

[0023] In some of these embodiments, inputting the mechanical property data of the charging pile into the genetic algorithm model for risk area prediction to obtain the high-risk area of the charging pile includes:

[0024] Take the stress field, strain field, and damage data of the charging pile as genetic operators, input them into the genetic algorithm model for crossover and mutation calculations to obtain the risk levels corresponding to each IK impact center point and each radiation point. Among the risk levels corresponding to each IK impact center point and each radiation point, the area where the risk level is lower than the preset risk threshold is identified as the low-risk area of the charging pile, and the area where the risk level exceeds the preset risk threshold is identified as the high-risk area of the charging pile.

[0025] In some of these embodiments, performing bending and torsion stiffness optimization design on the high-risk area of the charging pile to convert the high-risk area into a low-risk area and obtain the optimized charging pile structure includes:

[0026] Through the genetic algorithm model, calculate the maximum mechanical property data of the high-risk area of the charging pile and the maximum mechanical property data of the low-risk area of the charging pile respectively;

[0027] Taking the maximum mechanical property data of the high-risk area as the constraint condition and the maximum mechanical property data of the low-risk area as the optimization direction, based on the RSM experimental design principle, perform bending and torsion stiffness optimization design on the high-risk area of the charging pile to obtain the optimized bending and torsion stiffness of the high-risk area;

[0028] Through the structure optimization module of the simulation software, perform topology optimization design on the high-risk area of the charging pile to make the bending and torsion stiffness of the high-risk area of the charging pile reach the optimized bending and torsion stiffness of the high-risk area, and obtain the optimized bending and torsion stiffness of the charging pile;

[0029] Based on the optimized flexural and torsional stiffness of the charging pile, reselect the new IK impact center point and radiation points, conduct a new round of finite element simulation tests on the charging pile against IK impact, and continue to optimize the high-risk areas based on the test results until all the high-risk areas are converted into low-risk areas, and output the geometric model of the charging pile.

[0030] In a second aspect, in this embodiment, a device for optimizing the IK impact resistance performance of a charging pile is provided, including: a calculation module, an impact point setting module, a simulation test module, a prediction module, and an optimization and adjustment module. Among them,

[0031] The calculation module is used to calculate the flexural and torsional stiffness of the charging pile;

[0032] The impact point setting module is used to set each IK impact center point on the charging pile based on the flexural and torsional stiffness of the charging pile and according to a preset flexural and torsional stiffness change gradient; determine each radiation point corresponding to each IK impact center point based on each IK impact center point, and record the coordinates of each IK impact center point and the coordinates of each radiation point, where each IK impact center point is the center of the circle where each radiation point is located;

[0033] The simulation test module is used to conduct an IK impact resistance test on the charging pile according to the coordinates of each IK impact center point and the coordinates of each radiation point, and obtain the mechanical property data of the charging pile;

[0034] The prediction module is used to predict the risk areas of the mechanical property data of the charging pile and obtain the high-risk areas of the charging pile;

[0035] The optimization and adjustment module is used to conduct an optimized design of the flexural and torsional stiffness of the high-risk areas of the charging pile to convert the high-risk areas into low-risk areas and obtain an optimized structure of the charging pile.

[0036] In a third aspect, in this embodiment, an electronic device is provided, including a memory, a processor, and a computer program stored on the memory and executable on the processor. When the processor executes the computer program, the method for optimizing the IK impact resistance performance of the charging pile described in the first aspect above is implemented.

[0037] In a fourth aspect, in this embodiment, a storage medium is provided, on which a computer program is stored. When the program is executed by a processor, the method for optimizing the IK impact resistance performance of the charging pile described in the first aspect above is implemented.

[0038] Compared with the related technologies, the method for optimizing the IK impact resistance performance of a charging pile provided in this embodiment calculates the bending and torsional stiffness of the charging pile; based on the bending and torsional stiffness of the charging pile, according to a preset gradient of change in bending and torsional stiffness, each IK impact center point is set on the charging pile; based on each IK impact center point, each radiation point corresponding to each IK impact center point is determined, and the coordinates of each IK impact center point and the coordinates of each radiation point are recorded, where each IK impact center point is the center of the circle where each radiation point is located; according to the coordinates of each IK impact center point and the coordinates of each radiation point, an IK impact resistance test is carried out on the charging pile to obtain the mechanical property data of the charging pile; a risk area prediction is carried out on the mechanical property data of the charging pile to obtain the high-risk area of the charging pile; a bending and torsional stiffness optimization design is carried out on the high-risk area of the charging pile to convert the high-risk area into a low-risk area, and an optimized charging pile structure is obtained, which solves the problems of high cost and low efficiency in optimizing the IK impact resistance performance of the charging pile, reduces the cost of optimizing the IK impact resistance performance of the charging pile, and improves the efficiency of optimizing the IK impact resistance performance of the charging pile.

[0039] Details of one or more embodiments of the present application are set forth in the following drawings and description to make other features, objects, and advantages of the present application more concise and understandable. BRIEF DESCRIPTION OF THE DRAWINGS

[0040] The drawings described herein are used to provide a further understanding of the present application and constitute a part of the present application. The illustrative embodiments and descriptions thereof are used to explain the present application and do not constitute an improper limitation of the present application. In the drawings:

[0041] Figure 1 is a block diagram of the hardware structure of the terminal of the method for optimizing the IK impact resistance performance of the charging pile in this embodiment;

[0042] Figure 2 is a flowchart of the method for optimizing the IK impact resistance performance of the charging pile in this embodiment;

[0043] Figure 3 is a flowchart of another method for optimizing the IK impact resistance performance of the charging pile in this embodiment;

[0044] Figure 4 is a block diagram of the structure of the device for optimizing the IK impact resistance performance of the charging pile in this embodiment. DETAILED DESCRIPTION OF THE EMBODIMENTS

[0045] To more clearly understand the purpose, technical solution, and advantages of the present application, the present application is described and illustrated below with reference to the drawings and embodiments.

[0046] Unless otherwise defined, technical terms or scientific terms involved in this application shall have the general meanings understood by those with ordinary skills in the technical field to which this application belongs. In this application, words such as "a", "an", "one kind", "the", "these", etc. do not indicate a limitation in quantity, and they can be singular or plural. The terms "include", "comprise", "have" and any variants thereof involved in this application are intended to cover non-exclusive inclusion; for example, a process, method, system, product or device including a series of steps or modules (units) is not limited to the listed steps or modules (units), but may include unlisted steps or modules (units), or may include other steps or modules (units) inherent in these processes, methods, products or devices. The terms "connected", "coupled", etc. involved in this application do not limit to physical or mechanical connections, but may include electrical connections, whether direct or indirect. The "multiple" involved in this application means two or more. "And / or" describes the association relationship of associated objects and indicates that three relationships can exist. For example, "A and / or B" can represent: A exists alone, A and B exist simultaneously, and B exists alone. Usually, the character " / " indicates that the objects associated before and after are in an "or" relationship. The terms "first", "second", "third", etc. involved in this application only distinguish similar objects and do not represent a specific sorting of the objects.

[0047] The method embodiment provided in this embodiment can be executed on a terminal, a computer or a similar computing device. For example, when running on a terminal, Figure 1 is the hardware structure block diagram of the terminal of the method for optimizing the IK impact resistance performance of the charging pile in this embodiment. As Figure 1 shown, the terminal may include one or more ( Figure 1 only one is shown in the figure) processors 102 and a memory 104 for storing data. Among them, the processor 102 may include, but is not limited to, a processing device such as a microprocessor MCU or a programmable logic device FPGA. The above terminal may further include a transmission device 106 for communication functions and an input / output device 108. Those of ordinary skill in the art can understand that Figure 1 the structure shown is only schematic and does not limit the structure of the above terminal. For example, the terminal may further include more or fewer components than those shown in Figure 1 the figure, or have a different configuration from that shown in Figure 1 the figure.

[0048] The memory 104 can be used to store computer programs, such as software programs and modules of application software, such as the computer program corresponding to the method for optimizing the IK impact resistance performance of the charging pile in this embodiment. The processor 102 executes various functional applications and data processing by running the computer program stored in the memory 104, that is, the above-mentioned method is implemented. The memory 104 may include a high-speed random access memory, and may also include a non-volatile memory, such as one or more magnetic storage devices, flash memories, or other non-volatile solid-state memories. In some instances, the memory 104 may further include a memory remotely disposed relative to the processor 102, and these remote memories may be connected to the terminal through a network. Examples of the above network include but are not limited to the Internet, enterprise intranet, local area network, mobile communication network, and combinations thereof.

[0049] The transmission device 106 is used to receive or send data via a network. The above network includes a wireless network provided by a communication provider of the terminal. In one instance, the transmission device 106 includes a network adapter (Network Interface Controller, abbreviated as NIC), which can be connected to other network devices through a base station and thus communicate with the Internet. In one instance, the transmission device 106 may be a radio frequency (RF) module, which is used to communicate with the Internet wirelessly.

[0050] In this embodiment, a method for optimizing the IK impact resistance performance of a charging pile is provided. Figure 2 is a flowchart of the method for optimizing the IK impact resistance performance of the charging pile in this embodiment, as Figure 2 shown, the process includes the following steps:

[0051] Step S201, calculate the bending and torsional stiffness of the charging pile.

[0052] Specifically, the flexural-torsional stiffness is a physical quantity that describes the ability of an object to resist deformation when subjected to bending and torsional external forces. Specifically, it mainly includes the bending stiffness and the torsional stiffness. The bending stiffness, also known as the flexural rigidity, is a physical quantity that describes the ability of an object to resist deformation when subjected to a bending force. Its calculation formula is usually EI, where E represents the elastic modulus of the material, reflecting the ability of the material to resist tension or compression under elastic deformation; I represents the moment of inertia of the cross-section, describing the degree of resistance of the cross-sectional shape and size to bending deformation. The larger the value of the bending stiffness, the stronger the ability of the object to resist bending deformation. The torsional stiffness refers to the ability of an object to resist torsional deformation when subjected to a torsional force. Its calculation formula is usually GJ / L, where GJ represents the torsional stiffness coefficient, which is related to the shear modulus of the material and the cross-sectional geometric characteristics; L is the acting length of the torsional force. The larger the value of the torsional stiffness, the stronger the ability of the object to resist torsional deformation. The flexural-torsional stiffness of the charging pile is calculated by the finite element simulation method. The finite element simulation method (Finite Element Analysis, FEA) performs strength checking, modal analysis, and dynamic simulation on the structure through simulation software to evaluate and optimize the performance of the design scheme. Use CAD software to establish a three-dimensional model of the charging pile and export it in a format recognizable by the finite element simulation software. Import the model into the finite element simulation software, set the material properties according to the actual situation of the charging pile, perform mesh division on the model, select appropriate element types and mesh densities, and set reasonable boundary conditions (such as fixed constraints, displacement constraints, etc.) according to the actual working conditions of the charging pile. Apply corresponding loads (such as bending loads, torsional loads, etc.) to the charging pile to simulate the stress situation of the charging pile during actual operation. Run the finite element simulation software and perform iterative solutions to obtain the response results such as the displacement and stress of the device. According to the solution results, calculate the bending stiffness and torsional stiffness of the device. Among them, other methods can also be used to calculate the flexural-torsional stiffness of the charging pile, and this embodiment does not make specific limitations on this.

[0053] Step S202, based on the flexural-torsional stiffness of the charging pile, set each IK impact center point on the charging pile according to the preset flexural-torsional stiffness change gradient.

[0054] Specifically, the IK level impact test standard is used to test the protection ability of the product shell when encountering collisions and is formulated by the International Electrotechnical Commission (IEC). The IK level ranges from IK00 (no protection) to IK11 (high protection), and the higher the number, the stronger the impact resistance of the product. For example, the IK10 level corresponds to an impact energy of 20 J, and a greater external force is required to cause a significant impact on the product shell. According to the bending and torsional stiffness of the charging pile measured at different positions through finite element analysis or experimental tests, a bending and torsional stiffness change gradient value is set. For example, for every 5% change in the bending and torsional stiffness of the charging pile, an IK impact center point is set, where the bending and torsional stiffness change gradient can be set according to the actual situation, and no specific limitation is made in this embodiment. By setting the IK impact center points through the preset bending and torsional stiffness change gradient, the complex structure of the charging pile equipment can be fully considered, thereby improving the accuracy of the IK impact test results.

[0055] Step S203: Based on each IK impact center point, determine each radiation point corresponding to each IK impact center point, and record the coordinates of each IK impact center point and the coordinates of each radiation point, where each IK impact center point is the center of the circle where each radiation point is located.

[0056] After determining each IK impact center point, to further improve the accuracy of the IK impact test results, based on each IK impact center point, corresponding radiation points are set around each IK impact center point. Among them, each radiation point can be distributed on concentric circles with each IK impact center point as the center, and can be evenly distributed or unevenly distributed. The position and number of radiation points can also be set in combination with the bending and torsional stiffness of adjacent IK impact center points. The specific distribution position and number can be set according to the actual situation. After setting each radiation point, record the coordinate positions of each IK impact center point and each radiation point for the subsequent IK impact test of the charging pile.

[0057] Step S204: According to the coordinates of each IK impact center point and the coordinates of each radiation point, conduct an IK impact test on the charging pile to obtain the mechanical property data of the charging pile.

[0058] Specifically, import the recorded coordinates of each IK impact center point and each radiation point into the simulation model. Through the matching algorithm, make the corresponding points in the simulation model coincide with the imported coordinate points. According to the matched coordinate points, determine the spatial attitude of the IK impact standard hammer head to ensure that the position, direction, and attitude of the hammer head are consistent with the experimental or measurement data. According to the IK impact standard (such as IK10, etc.), set the magnitude, direction, and duration of the impact load, apply the corresponding impact load in the finite element model, and simulate the IK impact process. Run the simulation model to perform finite element calculations. During the calculation process, the simulation software will automatically solve the mechanical property data such as the stress field, strain field, and damage data of the charging pile. After the simulation is completed, output the mechanical property data of the charging pile.

[0059] Step S205: Predict the risk areas for the mechanical performance data of the charging pile to obtain the high-risk areas of the charging pile.

[0060] Based on the mechanical performance data of the charging pile obtained from the simulated IK impact test, analyze the mechanical performance data of the charging pile to identify the risk areas of the charging pile. Among them, the identification methods can include machine learning methods, statistical analysis methods or reliability analysis. Among them, machine learning methods can use supervised learning algorithms (such as random forest, support vector machine) or deep learning algorithms (such as neural network) to train the mechanical performance data to predict the high-risk areas; statistical analysis methods can be based on historical data and use methods such as regression analysis and cluster analysis to identify the high-risk areas; reliability analysis can combine reliability theory to calculate the failure probability of key areas. The identification of high-risk areas includes the identification of stress concentration areas, that is, areas where the stress exceeds the yield strength of the material, and these areas are prone to plastic deformation or fracture; the identification of fatigue danger areas, that is, areas with large stress amplitudes under alternating loads, and these areas are prone to fatigue failure; or the identification of areas with excessive deformation, that is, areas where the deformation exceeds the allowable range, and these areas may affect the function and safety of the charging pile.

[0061] Step S206: Optimize the bending and torsion stiffness design of the high-risk areas of the charging pile to convert the high-risk areas into low-risk areas and obtain the optimized charging pile structure.

[0062] Specifically, after identifying the high-risk areas of the charging pile, parameter adjustments are made to the high-risk areas to improve the anti-IK impact performance of the high-risk areas. Among them, the optimization design can be optimizing the structural design: strengthening the structural strength of the high-risk areas, such as adding reinforcing ribs, using thicker materials, etc., to improve the impact resistance of the charging pile; or by optimizing the shape of the charging pile, such as adopting a streamlined design, which can reduce stress concentration during impact and improve the overall impact resistance of the charging pile. Or optimizing the materials of the charging pile: Selecting high-strength and high-toughness materials can improve the impact resistance of the charging pile. For example, high-strength aluminum alloy or composite materials can be selected. These materials can better absorb and disperse impact energy when being impacted, reducing the damage degree of the charging pile; or using materials with good elasticity and toughness, such as rubber or plastic materials for the outer shell or key parts of the charging pile. Or optimizing the connection parts: such as adopting a more secure connection method (such as welding, riveting, etc.) or increasing the strength of the connection parts to improve the impact resistance of the charging pile; or adding redundant design to the connection parts, such as increasing the number of connection points or adopting multiple connection methods, to improve the reliability of the connection parts and reduce the damage of the charging pile caused by the failure of the connection parts. Or through simulation and test optimization, the bending and torsion stiffness is improved by adjusting the geometric parameters (such as cross-sectional dimensions, wall thickness, etc.) of the charging pile structure. A parametric model can be set in finite element analysis software, and optimization algorithms (such as genetic algorithms, particle swarm optimization algorithms, etc.) are used to automatically search for the optimal parameter combination. The bending and torsion stiffness of the high-risk area is increased to a certain level, turning it into a low-risk area, so as to obtain the optimized charging pile structure. The specific target value can be determined according to the design specifications and actual usage requirements of the charging pile.

[0063] Through the above steps S201 to S206, calculate the bending and torsional stiffness of the charging pile; based on the bending and torsional stiffness of the charging pile, set each IK impact center point on the charging pile according to the preset bending and torsional stiffness change gradient; determine each radiation point corresponding to each IK impact center point based on each IK impact center point, and record the coordinates of each IK impact center point and the coordinates of each radiation point, where each IK impact center point is the center of the circle where each radiation point is located; perform an anti-IK impact test on the charging pile according to the coordinates of each IK impact center point and the radiation point coordinates to obtain the mechanical property data of the charging pile; perform a risk area prediction on the mechanical property data of the charging pile to obtain the high-risk area of the charging pile; perform an optimization design on the high-risk area of the charging pile to convert the high-risk area into a low-risk area, and obtain the optimized charging pile structure. Compared with the prior art where multiple manual IK impact tests are performed, in this embodiment, based on the bending and torsional stiffness of the charging pile, the impact points of the IK impact standard hammerhead are set according to the preset bending and torsional stiffness change gradient, and the impact center points and corresponding radiation points are set. An anti-IK impact test is performed based on the set impact center points and radiation points, fully considering the complexity of the charging pile structure, and improving the accuracy of the IK impact test detection results; then, based on the mechanical property data of the charging pile obtained from the IK impact test, a risk assessment is performed on the data to obtain the high-risk area of the charging pile, and an automatic optimization design is performed on the high-risk area to obtain the optimized charging pile structure. It can automatically complete the setting of the impact points and the optimization of the high-risk area according to the set program, reducing the cost of optimizing the anti-IK impact performance of the charging pile and improving the efficiency of the anti-IK impact performance of the charging pile.

[0064] In some of these embodiments, calculating the bending and torsional stiffness of the charging pile includes:

[0065] Combined with the material constitutive model of the charging pile, based on the material damage criterion, calculate the bending and torsional stiffness of the charging pile by the finite element simulation method; wherein, the material constitutive model of the charging pile includes strain rate plastic hardening parameters, creep aging performance parameters, and different temperature performance parameters.

[0066] Specifically, the bending and torsional stiffness test of the charging pile is affected by material constitutive, temperature, etc. To improve the accuracy of the test results, in this embodiment, the test calculation will be carried out in combination with the material constitutive model and material damage criterion of the charging pile. Among them, the material constitutive model of the charging pile includes strain rate plastic hardening parameters, creep aging performance parameters, and different temperature performance parameters. The strain rate plastic hardening parameters describe the plastic deformation behavior of the material at different strain rates. Usually, it includes strain hardening index (n), strain rate sensitivity index (m), plastic hardening modulus (Ep), etc. These parameters reflect the change law of the material's yield stress during the loading process as the strain and strain rate increase. The creep aging performance parameters describe the performance degradation of the material during long-term service due to factors such as time and temperature. These parameters include creep strain, creep damage variable (D), creep life (tr), etc. The material constitutive model of the charging pile is affected by temperature parameters, and the mechanical properties of the material will change with temperature. Different temperature performance parameters reflect the change of the material's mechanical properties at different temperatures, including elastic modulus, yield strength, tensile strength, etc. When establishing the material constitutive model, temperature-related parameters are introduced to reflect the mechanical properties of the material at different temperatures. And to meet the adaptability of the charging pile in different environments, in this embodiment, the bending and torsional stiffness of the charging pile is tested at different temperatures to improve the accuracy of the test results. For example, the test is carried out under extreme temperatures of 40°C or 80°C. Among them, the material constitutive model of the charging pile can adopt a double-layer viscoplastic constitutive model, and an optimization tool is used to obtain the material parameters of the constitutive model at different temperatures, and a temperature-related double-layer viscoplastic constitutive model is established. This model can well predict the stress-strain behavior of the material in different temperature ranges. Through these parameters, the constitutive model of the charging pile material can comprehensively describe the behavior of the material under complex mechanical and environmental conditions. The strain rate plastic hardening parameters reflect the deformation characteristics of the material under dynamic loading; the creep aging performance parameters are used to evaluate the long-term reliability of the material; and the different temperature performance parameters ensure the applicability of the material in different environments.

[0067] In finite element simulation, the influence of material damage on the bending and torsional stiffness of the charging pile also needs to be considered. In this embodiment, an energy-based damage criterion or a strain-based damage criterion is adopted to evaluate the damage degree of the material under different load and temperature conditions. Through the damage evolution model, the influence of material damage on the stiffness of the charging pile is predicted. In finite element simulation, by defining the geometric model, material properties, boundary conditions, and load conditions of the charging pile, and combining temperature parameters and material damage, the mechanical behavior of the charging pile at different temperatures can be accurately simulated, and the bending and torsional stiffness at different temperatures can be obtained.

[0068] In another embodiment, determining each radiation point corresponding to each IK impact center point based on each IK impact center point includes:

[0069] With each IK impact center point as the center and a preset radiation length as the radius, radiate outward to form a radiation layer until the radiation layer of the current IK impact center point overlaps with the radiation layer of the adjacent IK impact center point, then stop radiating to obtain the radiation layers corresponding to each IK impact center point; obtain a preset number of radiation points on the radiation layers corresponding to each IK impact center point to obtain the radiation points corresponding to each IK impact center point.

[0070] Specifically, after setting the IK impact center points based on the bending and torsional stiffness of the charging pile, in order to more comprehensively detect the IK impact resistance performance of the charging pile, corresponding radiation points are set outside each IK impact center point. First, with each IK impact center point as the center, according to the size of the charging pile area, set the radiation radius. For example, for a charging pile device with a width of 100 - 200 mm, a radiation radius of 10 mm can be set, and for a charging pile device with a width of 200 - 500 mm, a radiation radius of 20 mm can be set. According to the set radiation radius, radiate outward in sequence with this IK impact center point as the center to form a radiation layer until it overlaps with the radiation layer of the adjacent IK impact center point, then stop radiating to obtain each radiation layer. Exemplarily, with the IK impact center point A as the center and a radiation radius of 10 mm, radiate outward to obtain a plurality of concentric circles, and each concentric circle is the radiation layer corresponding to the IK impact center point A. The first radiation layer is a circle with A as the center and a radius of 10 mm, the second radiation layer is a circle with A as the center and a radius of 20 mm, and so on, until the outermost concentric circle of the IK impact center point A overlaps with the outermost concentric circle of the adjacent other IK impact center point, then stop radiating to obtain the radiation layers corresponding to the IK impact center A. In order to make the IK impact test results more accurate, set a preset number of IK impact radiation points on each radiation layer. For example, set 12 IK impact radiation points on each radiation layer. The specific number of radiation points can be set according to actual needs, and this embodiment does not make specific limitations on this. The radiation points can be set evenly or unevenly, and can be determined according to the distribution of other radiation points. This embodiment also does not make specific limitations on this. Thus, each IK impact center point and IK impact radiation point of the charging pile are obtained.

[0071] In some embodiments, the mechanical property data of the charging pile includes: the stress field, strain field, and damage data of the charging pile.

[0072] Specifically, when performing the IK impact test on the charging pile, it involves maximum strain, strain distribution, stress field, strain field, acceleration data, damage data, reaction force data, impact energy data, etc. In this embodiment, the stress field, strain field, and damage data of the charging pile are used as reference data to optimize the structure of the charging pile. The stress field data reflects the stress distribution of each point inside the charging pile when it is subjected to external forces. Stress is the internal force per unit area, usually measured in pascals (Pa). In the test, it can be measured by stress sensors. The strain field data describes the degree of deformation of each point on the charging pile when it is subjected to external forces. Strain is the relative deformation that occurs in a material when it is stressed, usually expressed as a dimensionless percentage. In the IK impact test, strain data can be measured by setting strain gauges on the outer shell of the charging pile. The damage data reflects the degree of damage to the material or structure of the charging pile after it is subjected to external forces. Damage can manifest as cracks, deformations, fractures, etc. Damage prediction and analysis can be carried out through simulation software.

[0073] In another embodiment, risk area prediction is performed on the mechanical property data of the charging pile to obtain the high-risk areas of the charging pile, including:

[0074] A genetic algorithm model is established according to the IK impact low-risk evaluation index and high-risk evaluation index of the charging pile; the mechanical property data of the charging pile is input into the genetic algorithm model for risk area prediction to obtain the high-risk areas of the charging pile.

[0075] Specifically, first, based on the experimental settings, low-risk evaluation indicators and high-risk evaluation indicators for the charging pile's IK impact are defined. For example, the low-risk evaluation indicators can be that the maximum stress of the charging pile in the IK impact test does not exceed the yield strength of the material, the maximum strain does not exceed the elongation at break of the material, and the damage degree is small, etc. The high-risk evaluation indicators can be that the maximum stress of the charging pile in the IK impact test exceeds the yield strength of the material, the maximum strain is close to or exceeds the elongation at break of the material, and the damage degree is large, etc. According to the low-risk and high-risk evaluation indicators, a fitness function is defined to evaluate the pros and cons of each solution, thereby establishing a genetic algorithm model. The fitness function can include stress fields, strain fields, and damage data, etc. The mechanical property data of the charging pile is input into the genetic algorithm model, and the input mechanical property data is processed by the genetic algorithm model to obtain the high-risk area of the charging pile. The model will evaluate the risk degree of each area according to the fitness function and finally determine the high-risk area. Exemplarily, in a certain IK impact test, by analyzing the mechanical property data of the charging pile through the genetic algorithm model, it is found that some parts of the charging pile have stress concentration, large strain, and high damage degree when being impacted, and these parts are determined as high-risk areas; Exemplarily, using the genetic algorithm model to predict the risk area of the mechanical property data of the charging pile, the results show that the connection parts and support structures of the charging pile are prone to damage when being impacted, and these parts are also determined as high-risk areas.

[0076] In some embodiments, inputting the mechanical property data of the charging pile into the genetic algorithm model for risk area prediction to obtain the high-risk area of the charging pile includes:

[0077] Taking the stress field, strain field, and damage data of the charging pile as genetic operators, inputting them into the genetic algorithm model for crossover and mutation calculations to obtain the risk degrees corresponding to each IK impact center point and each radiation point. Among the risk degrees corresponding to each IK impact center point and each radiation point, the area where the risk degree is lower than the preset risk threshold is identified as the low-risk area of the charging pile, and the area where the risk degree exceeds the preset risk threshold is identified as the high-risk area of the charging pile.

[0078] Specifically, predicting the high-risk areas of the charging pile through the genetic algorithm model includes: inputting the stress field, strain field, and damage data of the charging pile into the genetic algorithm model, using the stress field, strain field, and damage data as genetic operators, where each operator represents the mechanical property data of a specific area of the charging pile, performing crossover and mutation calculations through the genetic algorithm model to obtain the risk levels corresponding to each IK impact center point and each radiation point, and dividing the risk areas of the charging pile according to the preset risk evaluation index, i.e., the risk threshold. Among the risk levels corresponding to each IK impact center point and each radiation point, the areas with risk levels lower than the preset risk threshold are identified as the low-risk areas of the charging pile, and the areas with risk levels exceeding the preset risk threshold are identified as the high-risk areas of the charging pile. Exemplarily, in a certain IK impact test, by analyzing the stress field, strain field, and damage data of the charging pile through the genetic algorithm model, it is found that stress concentration, large strain, and high damage degree occur in some parts of the charging pile when it is impacted, and these parts are determined as high-risk areas.

[0079] In another embodiment, the bending and torsional stiffness of the high-risk areas of the charging pile is optimized to convert the high-risk areas into low-risk areas, and the optimized charging pile structure is obtained, including:

[0080] Through the genetic algorithm model, calculate the maximum mechanical property data of the high-risk areas of the charging pile and the maximum mechanical property data of the low-risk areas of the charging pile respectively; taking the maximum mechanical property data of the high-risk areas as the constraint condition and the maximum mechanical property data of the low-risk areas as the optimization direction, based on the RSM experimental design principle, optimize the bending and torsional stiffness of the high-risk areas of the charging pile to obtain the optimized bending and torsional stiffness of the high-risk areas; through the structure optimization module of the simulation software, perform topology optimization design on the high-risk areas of the charging pile to make the bending and torsional stiffness of the high-risk areas of the charging pile reach the optimized bending and torsional stiffness of the high-risk areas, and obtain the optimized bending and torsional stiffness of the charging pile; based on the optimized bending and torsional stiffness of the charging pile, reselect new IK impact center points and radiation points, conduct a new round of anti-IK impact finite element simulation test on the charging pile, and continue to optimize the high-risk areas based on the test results until all high-risk areas are converted into low-risk areas, and output the geometric model of the charging pile.

[0081] Specifically, the maximum stress, maximum strain, and maximum damage data of the high-risk areas of the charging pile are calculated through a genetic algorithm model. These data will be used as the constraint conditions for subsequent optimization design. The maximum stress, maximum strain, and maximum damage data of the low-risk areas of the charging pile are calculated through the genetic algorithm model. These data will be used as the optimization direction for subsequent optimization design. The principles of RSM experimental design include clarifying the objectives, selecting appropriate experimental design methods, reasonably setting the experimental range, randomizing the experimental order, repeating the experiments, data analysis and model construction, optimization and verification, and iterative improvement. By following these principles, the process parameters can be optimized efficiently and a reliable mathematical model can be established. Taking the maximum mechanical property data of the high-risk areas as the constraint conditions and the maximum mechanical property data of the low-risk areas as the optimization direction, based on the RSM experimental design principles, the bending and torsional stiffness of the high-risk areas of the charging pile is optimized to obtain the optimized bending and torsional stiffness of the high-risk areas. The RSM experimental design principles can help determine the optimization objective function and constraint conditions. Among them, the optimization objective function can be the bending and torsional stiffness of the high-risk areas, and the constraint conditions can be the mechanical property data of the low-risk areas.

[0082] Based on the optimized bending and torsional stiffness of the charging pile, new IK impact center points and radiation points are reselected. These points will be used for a new round of anti-IK impact finite element simulation tests. Through the simulation tests, the mechanical properties of the optimized charging pile under IK impact can be evaluated. Based on the test results, the high-risk areas are continuously optimized. If the test results show that there are still high-risk areas, further optimization design is required until all high-risk areas are converted into low-risk areas. When all high-risk areas are converted into low-risk areas, the geometric model of the optimized charging pile is output. Or when the number of optimization cycles reaches the preset number, the loop iteration is ended and the geometric model of the optimized charging pile is output. This model will have better mechanical properties and safety and can be used for the actual design and manufacturing of charging piles.

[0083] A charging pile is produced based on the optimized geometric model of the charging pile, and an IK impact test is carried out on the actually produced charging pile to verify the degree of optimization of the model.

[0084] In this embodiment, a method for optimizing the anti-IK impact performance of a charging pile is also provided. Figure 3 It is a flowchart of another method for optimizing the anti-IK impact performance of a charging pile in this embodiment, as Figure 3 shown, and this process includes the following steps:

[0085] Step S301, in combination with the material constitutive model of the charging pile, based on the material damage criterion, calculate the bending and torsional stiffness of the charging pile through the finite element simulation method; among them, the material constitutive model of the charging pile includes strain rate plastic hardening parameters, creep aging performance parameters, and different temperature performance parameters;

[0086] Step S302: Based on the flexural-torsional stiffness of the charging pile, set each IK impact center point on the charging pile according to the preset flexural-torsional stiffness change gradient.

[0087] Step S303: Radiate outward with each IK impact center point as the center and the preset radiation length as the radius to form a radiation layer until the radiation layer of the current IK impact center point overlaps with the radiation layer of the adjacent IK impact center point, then stop radiating to obtain each radiation layer corresponding to each IK impact center point; Obtain a preset number of radiation points on each radiation layer corresponding to each IK impact center point to obtain each radiation point corresponding to each IK impact center point.

[0088] Step S304: Record the coordinates of each IK impact center point and the coordinates of each radiation point.

[0089] Step S305: According to the coordinates of each IK impact center point and the coordinates of each radiation point, conduct an anti-IK impact test on the charging pile to obtain the stress field, strain field and damage data of the charging pile.

[0090] Step S306: Establish a genetic algorithm model according to the low-risk evaluation index and high-risk evaluation index of the IK impact of the charging pile.

[0091] Step S307: Take the stress field, strain field and damage data of the charging pile as genetic operators, input them into the genetic algorithm model for crossover and mutation calculations to obtain the risk levels corresponding to each IK impact center point and each radiation point. Among the risk levels corresponding to each IK impact center point and each radiation point, the area with a risk level lower than the preset risk threshold is identified as the low-risk area of the charging pile, and the area with a risk level exceeding the preset risk threshold is identified as the high-risk area of the charging pile.

[0092] Step S308: Through the genetic algorithm model, calculate the maximum mechanical property data of the high-risk area of the charging pile and the maximum mechanical property data of the low-risk area of the charging pile respectively; Taking the maximum mechanical property data of the high-risk area as the constraint condition and the maximum mechanical property data of the low-risk area as the optimization direction, based on the RSM experimental design principle, conduct flexural-torsional stiffness optimization design on the high-risk area of the charging pile to obtain the optimized flexural-torsional stiffness of the high-risk area.

[0093] Step S309: Through the topology optimization design module of the simulation software, conduct topology optimization design on the high-risk area of the charging pile so that the flexural-torsional stiffness of the high-risk area of the charging pile reaches the optimized flexural-torsional stiffness of the high-risk area to obtain the optimized flexural-torsional stiffness of the charging pile.

[0094] Step S310: Based on the optimized flexural and torsional stiffness of the charging pile, reselect new IK impact center points and radiation points, and conduct a new round of finite element simulation tests for the charging pile against IK impact to obtain test results.

[0095] Step S311: Determine whether there are still high-risk areas in the test results. If so, execute Step S308; otherwise, execute Step S312.

[0096] Step S312: Output the geometric model of the charging pile according to the optimized charging pile structure.

[0097] Step S313: Use the geometric model of the optimized charging pile to make a mold and sample, and conduct actual IK impact verification on the actually produced charging pile.

[0098] Through the above Steps S301 to S313, compared with the prior art where multiple manual IK impact tests are carried out, in this embodiment, the flexural and torsional stiffness of the charging pile equipment is calculated based on the finite element simulation method. The IK impact center points are set according to the preset change range of the flexural and torsional stiffness. The radiation layer is set for each IK impact center point according to the preset radius growth range until it coincides with the radiation layers of other center points. A preset number of radiation points are set on each radiation layer. The spatial attitude of the IK impact standard hammer head is positioned according to the center points and radiation points to conduct the first round of finite element simulation, and the stress field, strain field, and damage data of the equipment are output. The stress field, strain field, and damage data are used as genetic operators for crossover and mutation calculations to output high-risk areas. Automatic optimization design of the flexural and torsional stiffness is carried out on the high-risk areas until the high-risk areas are optimized into low-risk areas, obtaining the optimized geometric structure of the charging pile, and thus obtaining the optimized geometric model of the charging pile. By automatically setting the impact points to conduct impact tests on the charging pile equipment, and automatically optimizing the high-risk areas after obtaining the test results, the optimization efficiency is improved and the optimization cost is reduced.

[0099] It should be noted that the steps shown in the above process or the flowchart of the accompanying drawings can be executed in a computer system such as a set of computer-executable instructions. And although the logical order is shown in the flowchart, in some cases, the steps shown or described can be executed in a different order than here. For example, Step S307 and Step S308 can be interchanged.

[0100] In this embodiment, a device for optimizing the IK impact resistance performance of a charging pile is also provided. This device is used to implement the above embodiment and the preferred implementation manners, and those that have been described will not be repeated. The following terms such as "module", "unit", "sub-unit", etc. can be a combination of software and / or hardware that can achieve a predetermined function. Although the devices described in the following embodiments are preferably implemented in software, the implementation in hardware, or a combination of software and hardware, is also possible and contemplated.

[0101] Figure 4 is the structural block diagram of the IK impact resistance performance optimization device for the charging pile in this embodiment. As Figure 4 shown, the device 40 includes: a calculation module 41, an impact point setting module 42, a simulation test module 43, a prediction module 44, and an optimization and adjustment module 45. Among them,

[0102] The calculation module 41 is used to calculate the bending and torsional stiffness of the charging pile;

[0103] The impact point setting module 42 is used to set each IK impact center point on the charging pile based on the bending and torsional stiffness of the charging pile and according to the preset bending and torsional stiffness change gradient; determine each radiation point corresponding to each IK impact center point based on each IK impact center point, and record the coordinates of each IK impact center point and the coordinates of each radiation point. Among them, each IK impact center point is the center of the circle where each radiation point is located;

[0104] The simulation test module 43 is used to perform an IK impact resistance test on the charging pile according to the coordinates of each IK impact center point and the coordinates of each radiation point, and obtain the mechanical property data of the charging pile;

[0105] The prediction module 44 is used to predict the risk area of the mechanical property data of the charging pile and obtain the high-risk area of the charging pile;

[0106] The optimization and adjustment module 45 is used to perform an optimization design of the bending and torsional stiffness of the high-risk area of the charging pile, so as to convert the high-risk area into a low-risk area and obtain the optimized structure of the charging pile.

[0107] It should be noted that the above-mentioned each module can be a functional module or a program module, and can be implemented either by software or by hardware. For the modules implemented by hardware, the above-mentioned each module can be located in the same processor; or the above-mentioned each module can also be located in different processors in any combined form.

[0108] In this embodiment, an electronic device is also provided, including a memory and a processor. A computer program is stored in the memory, and the processor is configured to run the computer program to execute the steps in any one of the above method embodiments.

[0109] Optionally, the above-mentioned electronic device may further include a transmission device and an input / output device. Among them, the transmission device is connected to the above-mentioned processor, and the input / output device is connected to the above-mentioned processor.

[0110] Optionally, in this embodiment, the above-mentioned processor may be configured to execute the following steps through a computer program:

[0111] S1, calculate the bending and torsional stiffness of the charging pile;

[0112] S2. Based on the flexural-torsional stiffness of the charging pile, set each IK impact center point on the charging pile according to the preset flexural-torsional stiffness change gradient.

[0113] S3. Based on each IK impact center point, determine each radiation point corresponding to each IK impact center point, and record the coordinates of each IK impact center point and the coordinates of each radiation point, where each IK impact center point is the center of the circle where each radiation point is located.

[0114] S4. According to the coordinates of each IK impact center point and the coordinates of each radiation point, conduct an IK impact resistance test on the charging pile to obtain the mechanical performance data of the charging pile.

[0115] S5. Conduct a risk area prediction on the mechanical performance data of the charging pile to obtain the high-risk area of the charging pile.

[0116] S6. Conduct an optimization design of the flexural-torsional stiffness for the high-risk area of the charging pile to convert the high-risk area into a low-risk area, and obtain the optimized charging pile structure.

[0117] It should be noted that the specific examples in this embodiment can refer to the examples described in the above embodiments and alternative embodiments, and will not be elaborated in this embodiment.

[0118] In addition, in combination with the charging pile IK impact resistance performance optimization method provided in the above embodiments, a storage medium can also be provided in this embodiment to implement it. A computer program is stored on the storage medium; when the computer program is executed by a processor, it implements any one of the charging pile IK impact resistance performance optimization methods in the above embodiments.

[0119] It should be understood that the specific embodiments described here are only used to explain this application, rather than to limit it. According to the embodiments provided in the present application, all other embodiments obtained by those of ordinary skill in the art without creative work fall within the protection scope of the present application.

[0120] Obviously, the drawings are only some examples or embodiments of the present application. For those of ordinary skill in the art, the present application can also be applied to other similar situations based on these drawings without creative work. Additionally, it can be understood that although the work done during this development process may be complex and time-consuming, for those of ordinary skill in the art, certain design, manufacturing, or production changes based on the technical content disclosed in the present application are only conventional technical means and should not be regarded as insufficient disclosure of the present application.

[0121] As used in this application, the term "embodiment" means that the specific features, structures, or characteristics described in connection with an embodiment may be included in at least one embodiment of this application. The phrase appears in various positions in the specification and does not necessarily mean the same embodiment, nor does it mean that it is independent or alternative to other embodiments and mutually exclusive. Those of ordinary skill in the art can clearly or implicitly understand that the embodiments described in this application can be combined with other embodiments without conflict.

[0122] Those of ordinary skill in the art can understand that all or part of the processes in the methods of the above embodiments can be completed by instructing relevant hardware through a computer program. The computer program can be stored in a non-volatile computer-readable storage medium. When the computer program is executed, it can include the processes of the embodiments of the above methods. Among them, any reference to a memory, database, or other medium used in the embodiments provided in this application can include at least one of non-volatile and volatile memories. Non-volatile memory can include read-only memory (ROM), magnetic tape, floppy disk, flash memory, optical memory, high-density embedded non-volatile memory, resistive random access memory (ReRAM), magnetoresistive random access memory (MRAM), ferroelectric random access memory (FRAM), phase change memory (PCM), graphene memory, etc. Volatile memory can include random access memory (RAM) or external cache memory, etc. By way of illustration and not limitation, RAM can be in various forms, such as static random access memory (SRAM) or dynamic random access memory (DRAM), etc. The databases involved in the embodiments provided in this application can include at least one of relational databases and non-relational databases. Non-relational databases can include distributed databases based on blockchain, etc., without limitation. The processors involved in the embodiments provided in this application can be general-purpose processors, central processing units, graphics processing units, digital signal processors, programmable logic devices, data processing logics based on quantum computing, etc., without limitation.

[0123] The above-described embodiments merely represent several implementation manners of the present application. The description thereof is relatively specific and detailed, but it should not be construed as a limitation on the scope of patent protection. It should be noted that for those of ordinary skill in the art, without departing from the concept of the present application, several modifications and improvements can still be made, and these all fall within the protection scope of the present application. Therefore, the protection scope of the present application shall be subject to the appended claims.

Claims

1. A method for optimizing the anti-IK impact performance of a charging pile, characterized in that: include: Calculating the bending and torsional stiffness of the charging pile; Based on the bending and torsional stiffness of the charging pile, and according to a preset bending and torsional stiffness change gradient, each IK impact center point is set on the charging pile; Determine each radiation point corresponding to each IK impact center point based on each IK impact center point, and record the coordinates of each IK impact center point and the coordinates of each radiation point, wherein each IK impact center point is the center of a circle where each radiation point is located; According to the coordinates of the IK impact center points and the coordinates of the radiation points, an IK impact resistance test is performed on the charging pile to obtain mechanical performance data of the charging pile; Predicting the risk area of ​​the mechanical performance data of the charging pile to obtain the high-risk area of ​​the charging pile; Performing a bending and torsional stiffness optimization design on a high-risk area of ​​the charging pile, so as to convert the high-risk area into a low-risk area, and obtaining an optimized charging pile structure; Wherein, determining each radiation point corresponding to each IK impact center point based on each IK impact center point includes: Taking each IK impact center point as the center of the circle and radiating outward with a preset radiation length as the radius to form a radiation layer, until the radiation layer of the current IK impact center point overlaps with the radiation layer of the adjacent IK impact center point, the radiation is stopped, and each radiation layer corresponding to each IK impact center point is obtained; A preset number of radiation points are acquired on each radiation layer corresponding to each IK impact center point to obtain each radiation point corresponding to each IK impact center point.

2. The method for optimizing the anti-IK impact performance of a charging pile according to claim 1, characterized in that: The calculation of the bending and torsional stiffness of the charging pile includes: combining the material constitutive model of the charging pile, based on the material damage criterion, and calculating the bending and torsional stiffness of the charging pile through a finite element simulation method; wherein the material constitutive model of the charging pile includes strain rate plastic hardening parameters, creep aging performance parameters, and different temperature performance parameters.

3. The method for optimizing the anti-IK impact performance of a charging pile according to claim 1, characterized in that: The mechanical performance data of the charging pile includes: stress field, strain field and damage data of the charging pile.

4. The method for optimizing the anti-IK impact performance of a charging pile according to claim 3, characterized in that: The step of predicting the risk area of ​​the mechanical performance data of the charging pile to obtain the high-risk area of ​​the charging pile includes: Establishing a genetic algorithm model according to the low risk evaluation index and high risk evaluation index of the IK impact of the charging pile; The mechanical property data of the charging pile is input into the genetic algorithm model to predict the risk area, and the high-risk area of ​​the charging pile is obtained.

5. The method for optimizing the anti-IK impact performance of a charging pile according to claim 4, characterized in that: The step of inputting the mechanical property data of the charging pile into the genetic algorithm model to predict the risk area and obtain the high-risk area of ​​the charging pile includes: The stress field, strain field and damage data of the charging pile are used as genetic operators and input into the genetic algorithm model for crossover and mutation calculations to obtain the risk levels corresponding to the IK impact center points and the radiation points. Among the risk levels corresponding to the IK impact center points and the radiation points, the area where the risk level is lower than a preset risk threshold is identified as a low-risk area of ​​the charging pile, and the area where the risk level exceeds the preset risk threshold is identified as a high-risk area of ​​the charging pile.

6. The method for optimizing the anti-IK impact performance of a charging pile according to claim 5, characterized in that: The method of optimizing the bending and torsional stiffness of the high-risk area of ​​the charging pile so as to convert the high-risk area into a low-risk area and obtain an optimized charging pile structure includes: By using the genetic algorithm model, the maximum mechanical property data of the high-risk area of ​​the charging pile and the maximum mechanical property data of the low-risk area of ​​the charging pile are calculated respectively; Taking the maximum mechanical property data of the high-risk area as the constraint condition and the maximum mechanical property data of the low-risk area as the optimization direction, based on the RSM experimental design principle, the bending-torsion stiffness optimization design of the high-risk area of ​​the charging pile is performed to obtain the optimized bending-torsion stiffness of the high-risk area; Through the simulation software structure optimization module, the high-risk area of ​​the charging pile is topologically optimized so that the bending-torsion stiffness of the high-risk area of ​​the charging pile reaches the optimized bending-torsion stiffness of the high-risk area, and the optimized bending-torsion stiffness of the charging pile is obtained; Based on the optimized bending and torsional stiffness of the charging pile, a new IK impact center point and radiation point are reselected, and a new round of anti-IK impact finite element simulation test is carried out on the charging pile. Based on the test results, the high-risk area is continuously optimized until all the high-risk areas are converted into low-risk areas, and the geometric model of the charging pile is output.

7. A device for optimizing the anti-IK impact performance of a charging pile, characterized in that: include: Calculation module, impact point setting module, simulation test module, prediction module and optimization adjustment module, among which, The calculation module is used to calculate the bending and torsional stiffness of the charging pile; The impact point setting module is used to set each IK impact center point on the charging pile based on the bending and torsional stiffness of the charging pile and according to a preset bending and torsional stiffness change gradient; determine each radiation point corresponding to each IK impact center point based on each IK impact center point, and record the coordinates of each IK impact center point and each radiation point coordinate, wherein each IK impact center point is the center of the circle where each radiation point is located; wherein, determining each radiation point corresponding to each IK impact center point based on each IK impact center point includes: taking each IK impact center point as the center of the circle and radiating outward with a preset radiation length as the radius to form a radiation layer, until the radiation layer of the current IK impact center point overlaps with the radiation layer of the adjacent IK impact center point, stopping radiation, and obtaining each radiation layer corresponding to each IK impact center point; obtaining a preset number of radiation points on each radiation layer corresponding to each IK impact center point, and obtaining each radiation point corresponding to each IK impact center point; The simulation test module is used to perform an anti-IK impact test on the charging pile according to the coordinates of the IK impact center points and the coordinates of the radiation points to obtain the mechanical performance data of the charging pile; The prediction module is used to predict the risk area of ​​the mechanical performance data of the charging pile to obtain the high-risk area of ​​the charging pile; The optimization and adjustment module is used to optimize the bending and torsional stiffness design of the high-risk area of ​​the charging pile, so as to convert the high-risk area into a low-risk area to obtain an optimized charging pile structure.

8. An electronic device comprising a memory and a processor, characterized in that: A computer program is stored in the memory, and the processor is configured to run the computer program to execute the method for optimizing the anti-IK impact performance of a charging pile according to any one of claims 1 to 6.

9. A computer-readable storage medium having a computer program stored thereon, characterized in that: When the computer program is executed by a processor, the steps of the method for optimizing the anti-IK impact performance of a charging pile according to any one of claims 1 to 6 are implemented.

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