Double-layer dielectric filter and filter device
By setting up a new coupling structure in the double-layer dielectric filter, it is solved that the dielectric waveguide filter is difficult to meet the needs of small size, low interpolation loss, large bandwidth and high rejection systems when placed on stacks, and the effect of significantly improving the filter bandwidth is achieved.
Patent Information
- Application Number
- CN202411844236.3
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-12
- Publication Date
- 2025-04-11
AI Technical Summary
In the new generation of mobile communication systems, filters need to meet the needs of small size, low interpolation loss, large bandwidth and high rejection systems, but existing dielectric waveguide filters are difficult to meet these requirements at the same time when stacked.
By providing a completely new coupling structure, including a first coupling hole and a second coupling window, at the interlayer interface and/or the input/output end face of the double-layer dielectric filter, a non-closed shape is formed to enhance coupling, thereby increasing the bandwidth of the filter.
This technical method significantly improves the bandwidth of the filter, meets the needs of a new generation of mobile communication systems, and is conducive to the production and debugging of dielectric filters.
Smart Images
Figure CN119812705A_ABST
Abstract
Description
Technical Field
[0001] The present application relates to the technical field of filter equipment, and in particular to a double-layer dielectric filter and a filter device. Background Art
[0002] In the new generation of mobile communication systems, filters face demands and challenges such as small size, low insertion loss, large bandwidth and high suppression. For example, in the 6th generation mobile communication system X-MIMO (cross-technology multi-user MultipeInput Multiple Output), 700MHz or even 1GHz bandwidth is required. Due to the sharp increase in the number of RF channels, the available space for filters inside the base station is also very limited. Filter insertion loss is also a very important consideration. Low insertion loss filters are of great significance for improving PA (Power Amplifier) efficiency, reducing heat consumption, and improving base station coverage.
[0003] Dielectric waveguide filters are a viable option that takes into account the above requirements. Compared with miniaturized metal filters, dielectric waveguide filters have the advantage of small size. Compared with other types of filters such as microstrip filters, chip filters, monoblock filters, etc., dielectric waveguide filters have the advantages of small insertion loss and high suppression.
[0004] In the current situation where available sizes are very small, in order to reduce the occupied area, dielectric waveguide filters need to be stacked, generally using double-layer stacking. Under double-layer stacking, the internal structure of the dielectric waveguide filter needs a new design to simultaneously meet the requirements of low insertion loss, large bandwidth and high suppression. Summary of the invention
[0005] The embodiments of the present application provide a double-layer dielectric filter and a filter device, which provide an enhanced coupling effect through a coupling structure, thereby greatly improving the bandwidth of the filter, which is beneficial to the production and debugging of the dielectric filter.
[0006] In one embodiment of the present application, a double-layer dielectric filter is provided, comprising: A first dielectric resonator and a second dielectric resonator, wherein the first dielectric resonator and the second dielectric resonator are stacked and aligned, and the first dielectric resonator and the second dielectric resonator have an interlayer interface that fits each other, and an input / output end face that is adjacent to or opposite to the interlayer interface; A coupling structure, the coupling structure is arranged at the interlayer interface and / or the input / output end surface, and the coupling structure includes: a first coupling hole, wherein the first coupling hole forms a hollow column in the first dielectric resonator and / or the second dielectric resonator, and an inner surface of the first coupling hole is covered with a metal layer; and A second coupling window is opened at the interlayer interface or the input / output end surface and surrounds the first coupling hole, and the second coupling window forms a non-closed shape.
[0007] In one embodiment, the coupling structure is arranged on the input / output end surface. The first coupling hole is recessed from the input / output end surface toward the first dielectric resonator or the second dielectric resonator, and the second coupling window is opened at the input / output end surface. The second coupling window has a breakpoint to form a non-closed shape.
[0008] In one embodiment, the input / output end surface comprises: an inner conductor, the inner conductor being located between the second coupling window and the first coupling hole; an outer conductor, wherein the outer conductor is located outside the second coupling window; Wherein, the breakpoint is electrically connected between the inner conductor and the outer conductor.
[0009] In one embodiment, the second dielectric resonator is located below the first dielectric resonator, the second dielectric resonator comprises a second frequency tuning hole recessed inward from the interlayer interface, and the first dielectric resonator and the second dielectric resonator are coupled via the second frequency tuning hole.
[0010] In one embodiment, the first coupling hole and the second frequency modulation hole are spaced apart, and the distance between the first coupling hole and the second frequency modulation hole is greater than a first threshold.
[0011] In one embodiment, the first dielectric resonator includes a first frequency tuning hole, and the first frequency tuning hole is recessed inward from an input / output end surface of the first dielectric resonator.
[0012] In one embodiment, the coupling structure is arranged at an interlayer interface between the first dielectric resonator and the second dielectric resonator, and the coupling structure comprises: a first coupling hole, wherein the first coupling hole forms a hollow column from the interlayer interface toward the first dielectric resonator and the second dielectric resonator, and an inner surface of the first coupling hole is covered with a metal layer; and A second coupling window is formed at the interlayer interface and surrounds the first coupling hole, and the second coupling window forms a non-closed shape.
[0013] In one embodiment, the first dielectric resonator comprises a first frequency tuning hole, and the first frequency tuning hole is recessed inward from the interlayer interface of the first dielectric resonator; The second dielectric resonator comprises a second frequency tuning hole, and the second frequency tuning hole is recessed inward from the interlayer interface of the second dielectric resonator; The first frequency modulation hole and the second frequency modulation hole are aligned to form the first coupling hole in combination.
[0014] In one embodiment, an angle of the second coupling window around the first coupling hole is less than or equal to 300°.
[0015] Another embodiment of the present application further provides a filter device, comprising: A plurality of double-layer dielectric filters as described above are connected in series and arranged side by side in the horizontal direction.
[0016] In this example, a new coupling structure is provided at the interlayer interface and / or the input / output end face. The coupling structure consists of two structures, which form a coupling structure inside itself and further form a coupling structure between the first dielectric resonator and the second dielectric resonator, thereby greatly improving the coupling strength to meet the bandwidth requirements of the filter.
[0017] Specifically, the coupling structure includes a first coupling hole and a second coupling window surrounding the first coupling hole, the second coupling window is coupled with the first coupling hole, and the second coupling window forms a non-enclosed surrounding structure, then the metal layers on both sides of the second coupling window are directly connected, and a coupling structure can be formed on the metal layer, thereby forming a strong coupling structure. The coupling structure of this embodiment greatly improves the bandwidth of the filter. At this time, the spacing between the frequency modulation hole and the input / output coupling hole is much larger than the safety spacing, which is very beneficial to the production and debugging of the dielectric filter. BRIEF DESCRIPTION OF THE DRAWINGS
[0018] The following drawings are only used to illustrate and explain the present application, and do not limit the scope of the present application: Figure 1 This is a schematic structural diagram of the first embodiment of the double-layer dielectric filter of the present application.
[0019] Figure 2 This is a schematic structural diagram of the first embodiment of the double-layer dielectric filter of the present application.
[0020] Figure 3 This is a schematic structural diagram of the second embodiment of the double-layer dielectric filter of the present application. DETAILED DESCRIPTION
[0021] In order to have a clearer understanding of the technical features, purposes and effects of the invention, the specific embodiments of the invention are now described with reference to the accompanying drawings, in which the same reference numerals represent the same parts.
[0022] In this document, “exemplary” means “serving as an example, instance or illustration”, and any diagram or implementation described in this document as “exemplary” should not be interpreted as a more preferred or more advantageous technical solution.
[0023] In order to simplify the drawings, only the parts related to the present invention are schematically shown in each figure, and do not represent the actual structure of the product. In addition, in order to simplify the drawings and facilitate understanding, in some figures, only one of the parts with the same structure or function is schematically drawn or marked.
[0024] In this document, “upper”, “lower”, “front”, “back”, “left”, “right”, etc. are only used to indicate the relative position relationship between related parts, rather than to limit the absolute positions of these related parts.
[0025] In this article, "first", "second", etc. are only used to distinguish each other, and do not indicate the importance and order, or the premise of each other's existence.
[0026] In this article, "equal", "same" and the like are not strictly limited in the mathematical and / or geometric sense, but also include errors that can be understood by those skilled in the art and are allowed in manufacturing or use. Unless otherwise specified, the numerical ranges herein include not only the entire range within its two endpoints, but also several sub-ranges contained therein.
[0027] The embodiments of the present application provide a double-layer dielectric filter and a filter device, which provide an enhanced coupling effect through a coupling structure, thereby greatly improving the bandwidth of the filter, which is beneficial to the production and debugging of the dielectric filter.
[0028] Example embodiments will now be described more fully with reference to the accompanying drawings.
[0029] First embodiment An embodiment of the present application provides a double-layer dielectric filter, comprising: A first dielectric resonator 10 and a second dielectric resonator 20, wherein the first dielectric resonator 10 and the second dielectric resonator 20 are stacked and aligned, and the first dielectric resonator 10 and the second dielectric resonator 20 have an interlayer interface that fits each other, and an input / output end face that is adjacent to or opposite to the interlayer interface; The coupling structure 30 is arranged at the interface between layers and / or the input / output end surface. The coupling structure 30 includes: a first coupling hole 31, wherein the first coupling hole 31 forms a hollow column in the first dielectric resonator 10 and / or the second dielectric resonator 20, and an inner surface of the first coupling hole 31 is covered with a metal layer; and The second coupling window 32 is opened at the interlayer interface or the input / output end surface and surrounds the first coupling hole 31 . The second coupling window 32 forms a non-closed shape.
[0030] In this example, the first dielectric resonator 10 and the second dielectric resonator 20 are both formed into a structure in which a metal layer is covered on the surface of a dielectric block, and the dielectric blocks are stacked and aligned with each other. Specifically, for example, the first dielectric resonator 10 includes a first dielectric block and a first metal layer covered on the surface of the first dielectric block, and the first dielectric block is made of a ceramic material with a high dielectric constant, and has the characteristics of a high dielectric constant, a high Qf (quality factor), and a low frequency temperature coefficient. The first dielectric block can be formed, for example, into a cube or a cuboid.
[0031] The first dielectric resonator 10 and the second dielectric resonator 20 are stacked in the vertical direction, and the first dielectric resonator 10 and the second dielectric resonator 20 have an interlayer interface that fits each other, and an input / output end face that is adjacent to or opposite to the interlayer interface. For example, the first dielectric resonator 10 is located above, and the second dielectric resonator 20 is located below the first dielectric resonator 10. Then the bottom surface of the first dielectric resonator 10 is the interlayer interface, and the first dielectric resonator 10 has six surfaces, and all surfaces except the interlayer interface can be used as the input / output end face of the first dielectric resonator. Similarly, the top surface of the second dielectric resonator 20 is the interlayer interface, and all surfaces except the interlayer interface can be used as the input / output end face of the second dielectric resonator. Preferably, the dielectric blocks of the first dielectric resonator 10 and the second dielectric resonator 20 have the same shape and corresponding sizes. Optionally, the dielectric blocks of the first dielectric resonator 10 and the second dielectric resonator 20 may also have different shapes, and when the first dielectric resonator 10 and the second dielectric resonator 20 are aligned with each other, the overlapping cross sections form an interlayer interface that fits each other.
[0032] Generally, in order to make the double-layer filter meet the requirements of low insertion loss, large bandwidth and high suppression at the same time, it is necessary to open a coupling window at the interlayer interface. Specifically, a hollow is formed in the metal layer at the interlayer interface to achieve the coupling of the upper and lower dielectric resonators. Optionally, a coupling hole can also be set on one or more input / output end faces. The strength of the input / output coupling is mainly controlled by the gap between the input / output coupling hole and the frequency modulation blind hole. The smaller the gap, the stronger the coupling. However, due to the level of medium processing and debugging technology, the spacing between the frequency modulation hole and the coupling hole cannot be less than a safe spacing, otherwise the medium here is at risk of being damaged during the processing and debugging process, thereby destroying the performance of the entire filter. In other words, there is an upper limit value for the coupling value of this coupling structure, and coupling exceeding this upper limit will not be achieved, thereby limiting the bandwidth of the filter. In the current interlayer coupling structure, it is difficult for the coupling window to provide strong coupling, thereby limiting the bandwidth of the filter. Generally speaking, the above window forms are difficult to meet the design requirements of filters with a relative bandwidth of more than 10%.
[0033] In this example, a new coupling structure 30 is provided at the interlayer interface and / or the input / output end surface. The coupling structure 30 consists of two structures, forming a coupling structure inside itself, and further forming a coupling structure between the first dielectric resonator 10 and the second dielectric resonator 20, thereby greatly improving the coupling strength to meet the bandwidth requirements of the filter.
[0034] Specifically, the coupling structure 30 includes a first coupling hole 31 and a second coupling window 32 surrounding the first coupling hole 31, the second coupling window 32 is coupled with the first coupling hole 31, and the second coupling window forms a non-enclosed surrounding structure, then the metal layers on both sides of the second coupling window are directly connected, and a coupling structure can be formed on the metal layer, thereby forming a strong coupling structure. The coupling structure 30 of this embodiment greatly improves the bandwidth of the filter. At this time, the spacing between the frequency modulation hole and the input / output coupling hole is much larger than the safety spacing, which is very beneficial to the production and debugging of the dielectric filter.
[0035] Typically, in order to surround the first coupling hole, the second coupling window may be formed into a ring shape. The non-enclosed shape in this example means that the second coupling window does not form a ring shape, for example, the second coupling window may be formed into a C-shaped shape, a semi-ring shape, or a plurality of rectangular windows spaced apart to form a ring shape, etc.
[0036] In such Figure 1 and Figure 2In the example shown, the coupling structure 30 is arranged on the input / output end surface, wherein the first coupling hole 31 is recessed from the input / output end surface into the first dielectric resonator 10 or the second dielectric resonator 20, and the second coupling window 32 is opened on the input / output end surface, and the second coupling window 32 has a breakpoint to form a non-closed shape.
[0037] In this embodiment, the second coupling window 32 is formed into a non-closed shape by forming a breakpoint on the ring structure. Figure 1 In the example shown, the second coupling window 32 is formed in a C-shape. Figure 2 In the example shown, the second coupling window 32 may include four arc-shaped windows (or rectangular windows) arranged at intervals, and the four arc-shaped windows form a ring shape with a breakpoint in the middle.
[0038] The surface of the input / output end face is covered with a metal layer, and the second coupling window is hollowed out on the metal layer to expose the dielectric material inside. The first coupling hole 31 forms a hollow column in the dielectric block, and the hollow column is recessed inward from the input / output end face, wherein the end face of the first coupling hole 31 is hollowed out on the input / output end face, and the inner surface of the first coupling hole 31 is fully covered with a metal layer.
[0039] In e.g. Figure 1 In the example shown, the coupling structure 30 is arranged on the input / output end surface of the second dielectric resonator 20, the bottom surface of the first coupling hole 31 is hollowed out on the input / output end surface, and the sidewall and top surface of the first coupling hole 31 are covered with a metal layer. The first coupling hole 31 is located at the center of the second coupling window 32, and the second coupling window 32 is arranged around the first coupling hole 31 from the outside of the first coupling hole 31. Then, on the input / output end surface of the first dielectric resonator 10, the surface is covered with a metal layer, and only the bottom surface of the first coupling hole 31 and the second coupling window 32 are hollowed out to expose the dielectric material inside.
[0040] Among them, the input / output end surface includes: An inner conductor 331, the inner conductor 331 is located between the second coupling window 32 and the first coupling hole 31; An outer conductor 332, the outer conductor 332 is located outside the second coupling window 32; The breakpoint is electrically connected between the inner conductor 331 and the outer conductor 332 .
[0041] On the input / output end face, the metal layer is divided into two parts, an inner conductor 331 and an outer conductor 332, by the second coupling window, wherein the inner conductor 331 is located between the second coupling window 32 and the first coupling hole 31, and the outer conductor 332 is located outside the second coupling window 32. The inner conductor 331 and the outer conductor 332 are not completely isolated by the second coupling window, but are electrically connected by the breakpoint in the second coupling window.
[0042] The inner conductor 331 and the outer conductor 332 can be used to form a pad for soldering to a printed circuit board (PCB). In this embodiment, the inner conductor pad is connected to the outer conductor pad through a connecting strip formed by one or more breakpoints, which can greatly enhance the coupling, thereby greatly improving the bandwidth of the filter. Among them, the dielectric waveguide filter is usually soldered on the PCB, so the connecting strip of the inner and outer pads can be made on the dielectric waveguide filter, on the PCB, or on both the dielectric waveguide filter and the PCB.
[0043] Specifically, the second dielectric resonator 20 is located below the first dielectric resonator 10, and the second dielectric resonator 20 includes a second frequency tuning hole 21 recessed inward from the interlayer interface, and the first dielectric resonator 10 and the second dielectric resonator 20 are coupled via the second frequency tuning hole 21. The first coupling hole 31 and the second frequency tuning hole 21 are arranged at intervals, and the interval between the first coupling hole 31 and the second frequency tuning hole 21 is greater than the first threshold.
[0044] In the second dielectric resonator 20, the second frequency tuning hole 21 is recessed inward from the interlayer interface, and the interlayer interface is arranged opposite to the input / output end face. Due to the strong coupling effect provided by the coupling structure 30, the distance between the second frequency tuning hole 21 and the first coupling hole 31 of the coupling structure 30 is much larger than the safety distance, which is very beneficial to the production and debugging of the dielectric filter. Here, the first threshold is set as the safety distance of the filter.
[0045] Optionally, the first dielectric resonator 10 includes a first frequency tuning hole 11 , and the first frequency tuning hole 11 is recessed inward from an input / output end surface of the first dielectric resonator 10 .
[0046] Second embodiment An embodiment of the present application provides a double-layer dielectric filter, comprising: A first dielectric resonator 10 and a second dielectric resonator 20, the first dielectric resonator 10 and the second dielectric resonator 20 have the same shape and are stacked in an aligned manner, and the first dielectric resonator 10 and the second dielectric resonator 20 have an interlayer interface that fits each other, and an input / output end face that is adjacent to or opposite to the interlayer interface; The coupling structure 30 is arranged at the interface between the layers, and the coupling structure 30 includes: a first coupling hole 31, the first coupling hole 31 forms a hollow column from the interlayer interface toward the first dielectric resonator 10 and the second dielectric resonator 20, and the inner surface of the first coupling hole 31 is covered with a metal layer; and The second coupling window 32 is formed at the interface between the layers and surrounds the first coupling hole 31 . The second coupling window 32 forms a non-closed shape.
[0047] In this example, the first dielectric resonator 10 and the second dielectric resonator 20 are both formed into a structure in which a metal layer is covered on the surface of a dielectric block, and the dielectric blocks have the same shape and corresponding size, so that they can be stacked and arranged in alignment with each other. Specifically, for example, the first dielectric resonator 10 includes a first dielectric block and a first metal layer covering the surface of the first dielectric block, and the first dielectric block is made of a ceramic material with a high dielectric constant, and has the characteristics of a high dielectric constant, a high Qf (quality factor), and a low frequency temperature coefficient. The first dielectric block can be formed, for example, into a cube or a cuboid.
[0048] The first dielectric resonator 10 and the second dielectric resonator 20 are stacked in the vertical direction, and the first dielectric resonator 10 and the second dielectric resonator 20 have an interlayer interface that fits each other, and an input / output end face that is adjacent to or opposite to the interlayer interface. For example, the first dielectric resonator 10 is located at the top, and the second dielectric resonator 20 is located below the first dielectric resonator 10. Then the bottom surface of the first dielectric resonator 10 is the interlayer interface, and the first dielectric resonator 10 has six surfaces, and the other surfaces except the interlayer interface can be used as the input / output end face of the first dielectric resonator. Similarly, the top surface of the second dielectric resonator 20 is the interlayer interface, and the other surfaces except the interlayer interface can be used as the input / output end face of the second dielectric resonator.
[0049] In this example, a new coupling structure 30 is provided at the interlayer interface. The coupling structure 30 consists of two structures, which form a coupling structure inside itself and are combined to form a coupling structure between the first dielectric resonator 10 and the second dielectric resonator 20, thereby greatly improving the coupling strength to meet the bandwidth requirements of the filter.
[0050] Specifically, the coupling structure 30 includes a first coupling hole 31 and a second coupling window 32 surrounding the first coupling hole 31, the second coupling window 32 is coupled with the first coupling hole 31, and the second coupling window forms a non-enclosed surrounding structure, then the metal layers on both sides of the second coupling window are directly connected, and a coupling structure can be formed on the metal layer, thereby forming a strong coupling structure. The coupling structure 30 of this embodiment greatly improves the bandwidth of the filter. At this time, the spacing between the frequency modulation hole and the input / output coupling hole is much larger than the safety spacing, which is very beneficial to the production and debugging of the dielectric filter.
[0051] In this embodiment, the first dielectric resonator 10 includes a first frequency tuning hole 11, which is recessed inward from the interlayer interface of the first dielectric resonator 10; the second dielectric resonator 20 includes a second frequency tuning hole 21, which is recessed inward from the interlayer interface of the second dielectric resonator 20. The first frequency tuning hole 11 and the second frequency tuning hole 21 are aligned to form a first coupling hole 31.
[0052] In this example, the first coupling hole 31 is formed by combining the frequency tuning holes of the first dielectric resonator 10 and the second dielectric resonator 20. The positions and sizes of the first frequency tuning holes 11 and the second frequency tuning holes 21 correspond to each other, so that the first coupling hole 31 is formed in alignment.
[0053] The first frequency modulation hole 11 and the second frequency modulation hole 21 are both recessed from the interlayer interface toward the inside of the corresponding dielectric block. On the interlayer interface of the first dielectric resonator 10, the surface is covered with a metal layer, and the second coupling window is hollowed out on the metal layer to expose the dielectric material inside. The first coupling hole 31 forms a hollow column in the dielectric block, and the hollow column is recessed from the interlayer interface toward the inside of the first dielectric resonator, wherein the bottom surface of the first coupling hole 31 is hollowed out at the interlayer interface, and the inner surface of the first coupling hole 31 is fully covered with a metal layer.
[0054] On the interlayer interface of the second dielectric resonator 20, the surface is covered with a metal layer, and the second coupling window is hollowed out on the metal layer to expose the dielectric material inside. The first coupling hole 31 forms a hollow column in the dielectric block, and the hollow column is recessed from the interlayer interface into the first dielectric resonator, wherein the top surface of the first coupling hole 31 forms a hollow at the interlayer interface, and the inner surface of the first coupling hole 31 is fully covered with a metal layer.
[0055] The angle of the second coupling window 32 around the first coupling hole 31 is less than or equal to 300°. In this embodiment, the second coupling window 32 is formed into a non-enclosed shape by semi-enclosing. Figure 1 In the example shown, the second coupling window 32 is formed in a C-type shape. The second coupling window 32 is formed in a continuous shape with only one breakpoint.
[0056] In this example, the coupling window is not limited to a semi-circular window, and other rectangular or special-shaped structures similar to the circular window can also achieve strong coupling. The semi-arc window is conducive to saving space and leaving design and debugging space for other couplings (such as coupling between cavities in the same layer).
[0057] In such Figure 1 and Figure 2 In the first embodiment shown, the coupling structure 30 of the double-layer dielectric filter is only arranged on the input / output end face. Figure 3In the second embodiment shown, the coupling structure 30 of the double-layer dielectric filter is only arranged at the interlayer interface. The form of the double-layer dielectric filter of this embodiment is not limited to this. In the same double-layer dielectric filter, both the coupling structure arranged at the input / output end face and the coupling structure arranged at the interlayer interface can be included, thereby providing a higher intensity coupling effect. By using the above-mentioned new input / output coupling structure and interlayer coupling structure, very strong coupling can be achieved in a very small size, thereby realizing a large bandwidth filter, and the relative bandwidth can be greater than 15%.
[0058] Another embodiment of the present application further provides a filter device, comprising: A plurality of double-layer dielectric filters as described above are connected in series and arranged side by side in the horizontal direction.
[0059] Among them, the filter device may include a double-layer dielectric filter in which the coupling structure 30 is only arranged on the input / output end face, a double-layer dielectric filter in which the coupling structure 30 is only arranged on the interlayer interface, and a double-layer dielectric filter in which the coupling structure 30 is arranged on both the input / output end face and the interlayer interface.
[0060] In a specific example, the filter device includes, for example, four double-layer dielectric filters, which are arranged in a horizontal direction and connected in series. For example, in the first double-layer dielectric filter, the coupling structure 30 is only provided at the input / output end face, in the second double-layer dielectric filter, the coupling structure 30 can be provided at both the input / output end face and the interlayer interface, in the third double-layer dielectric filter, the coupling structure 30 is only provided at the interlayer interface, and in the fourth double-layer dielectric filter, the coupling structure 30 is only provided at the input / output end face.
[0061] The above description is only a preferred embodiment of the present application and is not intended to limit the present application. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present application shall be included in the scope of protection of the present application.
Claims
1. A double-layer dielectric filter, characterized in that: include: A first dielectric resonator (10) and a second dielectric resonator (20), the first dielectric resonator (10) and the second dielectric resonator (20) being stacked and aligned, the first dielectric resonator (10) and the second dielectric resonator (20) having an interlayer interface that fits each other, and an input / output end face that is adjacent to or opposite to the interlayer interface; A coupling structure (30), the coupling structure (30) being arranged at the interlayer interface and / or the input / output end surface, the coupling structure (30) comprising: A first coupling hole (31), the first coupling hole (31) forming a hollow column in the first dielectric resonator (10) and / or the second dielectric resonator (20), the inner surface of the first coupling hole (31) being covered with a metal layer; and A second coupling window (32), the second coupling window (32) is opened at the interlayer interface or the input / output end surface and surrounds the first coupling hole (31), and the second coupling window (32) forms a non-closed shape.
2. The double-layer dielectric filter according to claim 1, characterized in that: The coupling structure (30) is arranged on the input / output end surface, The first coupling hole (31) is recessed from the input / output end surface into the first dielectric resonator (10) or the second dielectric resonator (20), and the second coupling window (32) is opened on the input / output end surface. The second coupling window (32) has a breakpoint to form a non-closed shape.
3. The double-layer dielectric filter according to claim 2, characterized in that: The input / output end surface comprises: an inner conductor (331), the inner conductor (331) being located between the second coupling window (32) and the first coupling hole (31); An outer conductor (332), the outer conductor (332) being located outside the second coupling window (32); Wherein, the breakpoint is electrically connected between the inner conductor (331) and the outer conductor (332).
4. The double-layer dielectric filter according to claim 2, characterized in that: The second dielectric resonator (20) is located below the first dielectric resonator (10), the second dielectric resonator (20) comprises a second frequency tuning hole (21) recessed inwardly from the interlayer interface, and the first dielectric resonator (10) and the second dielectric resonator (20) are coupled via the second frequency tuning hole (21).
5. The double-layer dielectric filter according to claim 4, characterized in that: The first coupling hole (31) and the second frequency modulation hole (21) are arranged at intervals, and the distance between the first coupling hole (31) and the second frequency modulation hole (21) is greater than a first threshold.
6. The double-layer dielectric filter according to claim 4, characterized in that: The first dielectric resonator (10) comprises a first frequency tuning hole (11), wherein the first frequency tuning hole (11) is recessed inwardly from an input / output end surface of the first dielectric resonator (10).
7. The double-layer dielectric filter according to claim 1, characterized in that: The coupling structure (30) is arranged at an interlayer interface between the first dielectric resonator (10) and the second dielectric resonator (20), and the coupling structure (30) comprises: A first coupling hole (31), the first coupling hole (31) forming a hollow column from the interlayer interface toward the first dielectric resonator (10) and the second dielectric resonator (20), the inner surface of the first coupling hole (31) being covered with a metal layer; and A second coupling window (32), the second coupling window (32) is formed at the interlayer interface and surrounds the first coupling hole (31), the second coupling window (32) forming a non-closed shape.
8. The double-layer dielectric filter according to claim 7, characterized in that: The first dielectric resonator (10) comprises a first frequency tuning hole (11), wherein the first frequency tuning hole (11) is recessed inwardly from an interlayer interface of the first dielectric resonator (10); The second dielectric resonator (20) comprises a second frequency tuning hole (21), wherein the second frequency tuning hole (21) is recessed inwardly from an interlayer interface of the second dielectric resonator (20); The first frequency modulation hole (11) and the second frequency modulation hole (21) are aligned to form the first coupling hole (31) in combination.
9. The double-layer dielectric filter according to claim 7, characterized in that: The angle of the second coupling window (32) around the first coupling hole (31) is less than or equal to 300°.
10. A filter device, characterized in that: include: A plurality of double-layer dielectric filters according to any one of claims 1 to 9, wherein the plurality of double-layer dielectric filters are connected in series and arranged side by side in the horizontal direction.