Preparation method of monolithic heterogeneous integrated optical device and optical device

Abstract

The invention particularly relates to a preparation method of a monolithic heterogeneous integrated optical device and the optical device. The main conception of the invention lies in that the semiconductor platform is utilized to synchronously design the laser, the amplifier (SOA), the modulator and the antenna assembly, so that the laser, the amplifier (SOA), the modulator and the antenna assembly can be arranged on the same wafer through one-time heterogeneous integration, and the purposes of reducing the device size and reducing the process complexity are achieved. Meanwhile, III-V family materials are selectively selected as heterogeneous integrated materials, so that synchronous preparation of a laser, an amplifier (SOA), a modulator and an antenna assembly on the same wafer becomes possible, and laser emitted by the laser is subjected to multi-path amplification by utilizing the light amplification effect of the amplifier and then is subjected to multi-path amplification under the phase shifting action of the modulator, so that the frequency of the laser is reduced. Therefore, the transmitting power of the optical phased array is enhanced, and the application value of the laser radar based on the optical phased array is further improved.

Description

Technical Field

[0001] The present invention relates to the technical field of optical device preparation technology, and in particular to a method for preparing a monolithic heterogeneous integrated optical device and the optical device. Background Art

[0002] Optical phased array and its derivative products have broad application prospects in the field of communication technology. Among them, the concept of optical phased array (OPA) comes from the traditional microwave phased array, but it has obvious advantages over microwave phased array. Since the optical phased array uses laser working in the optical band as the information carrier, it is not affected by the interference of traditional radio waves. In addition, the laser beam is narrow and not easy to be detected, which has good confidentiality.

[0003] In the prior art, the phased array includes multiple components such as an optical generator, a modulator, an antenna array, a transceiver, etc. Due to the different components, multiple bonding or assembly of components is often required, which results in the phased array being too large and lacking in compatibility, thus limiting the application scenarios. Summary of the invention

[0004] In view of the technical problems in the prior art that the optical phased array preparation process is complex and the device size is large, the present invention provides a method for preparing a monolithic heterogeneous integrated optical device, which has at least the advantages of simple preparation process, reasonable device layout, and reliable function.

[0005] First aspect

[0006] The present invention provides a method for preparing a monolithic heterogeneous integrated optical device, comprising:

[0007] S10, etching the etching areas corresponding to the components and the connecting waveguides for connecting the components on the first wafer respectively according to the distribution positions and connection relationships of the components on the optical device;

[0008] S20, according to the difference of the components, doping the etched area in a targeted manner to obtain a first functional layer;

[0009] S30, using the dielectric layer as a bonding basis, heterogeneously integrating the second wafer disposed on the dielectric layer onto the first wafer;

[0010] S40, etching the second wafer in a targeted manner according to the difference of the components to obtain a second functional layer;

[0011] S50, etching the dielectric layer in a targeted manner according to the difference of the components, and then doping the etched dielectric layer in a targeted manner to obtain a third functional layer;

[0012] S60, depositing a first metal layer on the first functional layer and the second functional layer respectively;

[0013] S70, depositing a second metal layer on the third functional layer;

[0014] S80, depositing a third metal layer on the first metal layer and the second metal layer respectively to form the corresponding components.

[0015] Specifically, one of the main technical concepts of the present invention is to utilize the combination of processing and manufacturing technology and device structural characteristics so that all components of the optical device can be processed based on the first wafer through only one bonding, so that the optical device only needs one bonding to complete the processing of all components on the chip, thereby simplifying the processing flow of the optical device and reducing the size of the optical device.

[0016] Furthermore, before step S80, the method includes:

[0017] S71, etching the first wafer to form a heat sink area;

[0018] S72, depositing a heat dissipation layer to cover the heat sink area, the first metal layer, the second metal layer, the second functional layer and the third functional layer;

[0019] S73, opening holes in the heat dissipation layer to at least partially expose the first metal layer and the second metal layer.

[0020] Furthermore, the components include lasers, amplifiers, modulators and antenna components.

[0021] Specifically, the optical device provided by the present invention is an optical phased array, and has all the component structures of a laser, an amplifier, a modulator and an antenna assembly. The function of the optical phased array can be realized only through a single chip, so that it has a broader application prospect.

[0022] Furthermore, the preparation method of the laser or the amplifier includes:

[0023] In step S10, the etched region includes a ridge waveguide;

[0024] Step S20 is not executed;

[0025] In step S40, the second functional layer includes a P-type evanescent light field coupling structure;

[0026] In step S50, the third functional layer includes an N-type evanescent light field coupling structure;

[0027] In step S60, the first metal layer includes a P-type electrode metal layer;

[0028] In step S70, the second metal layer includes an N-type electrode metal layer;

[0029] In step S80, the third metal layer includes a metal connection layer.

[0030] Specifically, the laser and amplifier provided by the present invention are prepared and obtained through the above process.

[0031] Optionally, the preparation method of the modulator comprises:

[0032] In step S20, the first functional layer includes a P-type lightly doped silicon ridge waveguide disposed on one side of the etching region, a first H+ doped region disposed on the other side of the etching region, and a P-type heavily doped silicon ridge waveguide connected to the P-type lightly doped silicon ridge waveguide;

[0033] In step S40, only the second wafer is etched without obtaining the second functional layer;

[0034] In step S50, the third functional layer includes an N-type evanescent light field coupling structure and a second H+ doped region doped based on the N-type evanescent light field coupling structure and aligned with the first H+ doped region;

[0035] In step S60, the first metal layer includes a P-type electrode metal layer;

[0036] In step S70, the second metal layer includes an N-type electrode metal layer;

[0037] In step S80, the third metal layer includes a metal connection layer.

[0038] Optionally, the method for preparing the antenna assembly includes:

[0039] In step S10, the etching area includes the antenna grating;

[0040] The steps after S10 are not executed.

[0041] It is worth explaining that although the processing technology of the modulator is different from that of the laser, amplifier and antenna assembly, based on the technical solution provided by the present invention, the components of these optical devices can be processed in the same time and space, which simplifies the complexity of the overall optical device processing and improves its processing efficiency.

[0042] Second aspect

[0043] The present invention provides a monolithic heterogeneous integrated optical device, which is obtained by the method for preparing a monolithic heterogeneous integrated optical device provided in any possible embodiment of the first aspect.

[0044] Furthermore, the present invention provides a monolithic heterogeneous integrated optical device, comprising:

[0045] A substrate, prepared based on the first wafer, a laser, an amplifier, a modulator and an antenna assembly arranged on the substrate, each assembly being connected through the connecting waveguide according to distribution positions and connection relationships;

[0046] The laser and the amplifier both include: the etched area is provided with a ridge waveguide, an N-type evanescent light field coupling structure covering the ridge waveguide, a P-type evanescent light field coupling structure provided on the N-type evanescent light field coupling structure, an N-type electrode metal layer provided on the N-type evanescent light field coupling structure, a P-type electrode metal layer provided on the P-type evanescent light field coupling structure, and a metal connection layer connected to the N-type electrode metal layer and the P-type electrode metal layer;

[0047] The modulator comprises: the etched area is provided with a P-type lightly doped silicon ridge waveguide, a P-type heavily doped silicon ridge waveguide and a first H+ doped area, an N-type evanescent light field coupling structure partially covering the P-type lightly doped silicon ridge waveguide, the N-type evanescent light field coupling structure comprises a second H+ doped area and the second H+ doped area is aligned with and covers the first H+ doped area, a P-type electrode metal layer is provided on the P-type heavily doped silicon ridge waveguide, an N-type electrode metal layer is provided on the N-type evanescent light field coupling structure, and a metal connection layer connected to the N-type electrode metal layer and the P-type electrode metal layer;

[0048] The antenna assembly comprises: the etched area is provided with an antenna grating.

[0049] Furthermore, the laser comprises a single or two or more broadband tunable lasers connected in series;

[0050] The laser and the amplifier include: a one-to-one connection or a one-to-many connection;

[0051] The amplifier, modulator and antenna assembly are connected in sequence and correspond one to one.

[0052] Specifically, the optical device provided by the present invention includes both a single laser, an amplifier, a modulator and an antenna assembly, and a combination of multiple amplifiers, modulators and antenna assemblies corresponding to a laser, so that the laser generated by the laser is amplified synchronously by the amplifiers of each branch after beam splitting, thereby enhancing the optical power emitted from the antenna array, thereby improving the power intensity of the optical device provided by the present invention. At the same time, the laser includes a single or two or more broadband tunable lasers connected in series, so as to increase the lateral adjustable angle of the antenna array scanning through the series connection of the lasers.

[0053] Optionally, the substrate includes a base, a thermal oxide layer disposed on the base, and a silicon layer disposed on the thermal oxide layer;

[0054] The P-type evanescent light field coupling structures of the laser, amplifier and modulator are based on III-V group materials.

[0055] Furthermore, the ridge waveguide, connecting waveguide and antenna grating are arranged in the silicon layer;

[0056] The laser, amplifier and modulator all include a heat sink region, and a heat dissipation layer disposed between the heat sink region and the first metal layer and the second metal layer;

[0057] The heat sink area of ​​the laser and amplifier is arranged on the thermal oxygen layer;

[0058] The heat sink area of ​​the modulator is arranged on the silicon layer.

[0059] Optionally, in the laser, the ridge waveguide has the function of limiting the light field in a direction toward the N-type evanescent light field coupling structure;

[0060] In the amplifier, the ridge waveguide has a function of confining the light field in a direction toward the substrate.

[0061] Furthermore, the width of the ridge waveguide of the laser is greater than the width of the ridge waveguide of the amplifier, that is, the adjustment of the width of the ridge waveguide can be used to distribute the light field of the component structures such as the laser and the amplifier.

[0062] Specifically, another main technical concept of the present invention is to utilize the regulation of the ridge waveguide to realize the functions of the laser and the amplifier respectively, so that the processing technology of the amplifier is the same as that of the laser, and the optimal light field distribution of the corresponding device is achieved.

[0063] In summary, the present invention provides a method for preparing a monolithic heterogeneous integrated optical device and an optical device, which have at least the following advantages:

[0064] 1. By combining the manufacturing process with the device structure characteristics, the optical device can be bonded once to process all the components of the optical device based on the first wafer, so that the optical device can be bonded once to complete the processing of all components on the chip, simplifying the processing flow of the optical device and reducing the size of the optical device;

[0065] 2. The optical device provided by the present invention includes both a single laser, an amplifier, a modulator and an antenna assembly, and a combination of multiple amplifiers, modulators and antenna assemblies corresponding to one laser, so that the laser light generated by the laser is amplified synchronously by the amplifiers of each branch after beam splitting, thereby enhancing the optical power emitted from the antenna array, thereby improving the power intensity of the optical device provided by the present invention;

[0066] 3. Another major technical concept of the present invention is to utilize the regulation of the ridge waveguide to realize the functions of the laser and the amplifier respectively, so that the processing technology of the amplifier is the same as that of the laser, and the optimal light field distribution of the corresponding device is achieved. BRIEF DESCRIPTION OF THE DRAWINGS

[0067] The present invention will be further described in detail below in conjunction with the accompanying drawings and preferred embodiments, but those skilled in the art will appreciate that these drawings are drawn only for the purpose of explaining the preferred embodiments and therefore should not be used as a limitation on the scope of the present invention. In addition, unless otherwise specified, the drawings are only schematically representing the composition or structure of the described objects and may contain exaggerated displays, and the drawings are not necessarily drawn to scale.

[0068] Figure 1 A schematic flow chart of a method for preparing a monolithic heterogeneous integrated optical device provided by an embodiment of the present invention;

[0069] Figure 2 A schematic diagram of a planar structure of a monolithic heterogeneous integrated optical device provided by an embodiment of the present invention;

[0070] Figure 3 A process diagram for preparing each component in an optical device provided by an embodiment of the present invention;

[0071] Figure 4 Another process diagram of manufacturing components of an optical device provided by an embodiment of the present invention;

[0072] Figure 5 A schematic diagram of a cross-sectional structure of a laser (a) and an amplifier (b) provided in one embodiment of the present invention;

[0073] Figure 6 A schematic cross-sectional structure diagram of a modulator provided by an embodiment of the present invention;

[0074] Figure 7 A schematic cross-sectional view of an antenna assembly provided by an embodiment of the present invention;

[0075] Figure 8 Schematic diagram of light field distribution of a laser (a), an amplifier (b) and a modulator (c) provided in one embodiment of the present invention;

[0076] 1. Optical device; 11. Laser; 12. Amplifier; 13. Modulator; 14. Antenna assembly; 15. Connecting waveguide; 101. Etching area; 102. First functional layer; 103. Second functional layer; 104. Third functional layer; 105. First metal layer; 106. Second metal layer; 107. Third metal layer; 108. Heat sink area; 109. Substrate; 110. Thermal oxide layer; 111. Silicon layer; 101a. Laser ridge waveguide; 101b. Amplifier Large ridge waveguide; 101c, antenna grating; 102a, P-type lightly doped silicon ridge waveguide; 102b, first H+ doped region; 102c, P-type heavily doped silicon ridge waveguide; 103a, P-type evanescent light field coupling structure; 103b, structural layer; 104a, N-type evanescent light field coupling structure; 104b, second H+ doped region; 105a, P-type electrode metal layer; 106a, N-type electrode metal layer; 107a, metal connection layer; 108a, heat dissipation layer. DETAILED DESCRIPTION

[0077] The following is combined with Figures 1 to 8 , the present invention is described in detail.

[0078] In order to make the purpose, technical solution and advantages of the present invention more clearly understood, the present invention is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not used to limit the present invention.

[0079] The main idea of ​​the present invention is to use a semiconductor platform to synchronously design the laser, amplifier (SOA), modulator and antenna assembly, so that they can be set on the same wafer through a single heterogeneous integration, thereby achieving the purpose of reducing the size of the device and reducing the complexity of the process. At the same time, the present invention selectively selects III-V group materials as heterogeneous integration materials, making it possible to synchronously prepare the laser, amplifier (SOA), modulator and antenna assembly on the same wafer, and utilizes the optical amplification effect of the amplifier to make the laser emitted by the laser amplified by multiple channels, and then uniformly emitted through the antenna assembly under the phase shifting effect of the modulator, thereby enhancing the transmission power of the optical phased array, thereby improving the application value of the laser radar based on the optical phased array.

[0080] For further information, see Figure 1 FIG. 1 is a schematic flow chart of a method for preparing a monolithic heterogeneous integrated optical device provided in one embodiment of the present invention.

[0081] Example 1

[0082] Based on the unified construction of each device, first, according to the distribution position and connection relationship of the components on the optical device, etching areas corresponding to the components and connecting waveguides for connecting the components are respectively etched on the first wafer through step S10, and the etching areas can be used to form ridge waveguides, ridge waveguide doping and antenna gratings, etc., and the connecting waveguides are used for optical connection between the components; then, according to the differences of the components, the etching areas are doped in a targeted manner to obtain the first functional layer; then, according to step S20, the second wafer arranged on the dielectric layer is heterogeneously integrated on the dielectric layer with the dielectric layer as the bonding basis. A first wafer; then, through step S40, according to the difference of the components, the second wafer is etched in a targeted manner to obtain a second functional layer; further, through step S50, according to the difference of the components, the dielectric layer is etched in a targeted manner, and then doping is performed in a targeted manner to obtain a third functional layer; then, through step S60, the first metal layer is deposited on the first functional layer and the second functional layer respectively; then, through step S70, the second metal layer is deposited on the third functional layer; finally, through step S80, the third metal layer is deposited on the first metal layer and the second metal layer to form the corresponding components.

[0083] It is worth explaining that, according to the differences in the components, it means that according to the structural differences of the laser, amplifier, modulator and antenna components, the operations that need to be performed are performed in a targeted manner, or the operations that do not need to be performed are not performed in a targeted manner. Therefore, in the case of a heterogeneous bonding, the required parts of the first wafer and the second wafer are utilized to form the laser, amplifier, modulator and antenna components respectively, thereby completing the monolithic unified processing of all functional components in the optical device, thereby achieving the purpose of reducing the manufacturing complexity of the optical device and reducing the size of the optical device.

[0084] Further, please refer to Table 1 which is a table showing the differences in the preparation methods of various components in the optical device provided in one embodiment of the present invention.

[0085] Table 1 Summary of differences in the preparation methods of various components in optical devices

[0086]

[0087]

[0088] Example 2

[0089] The laser is prepared as follows:

[0090] In S10, for the processing area of ​​the laser, when processing the etching area, a laser ridge waveguide is synchronously acquired;

[0091] In S20, no operation is performed on the processing area of ​​the laser;

[0092] In S30, the heterogeneous integration operation is performed normally;

[0093] In S40, etching the second wafer with respect to the processing area of ​​the laser to obtain a P-type evanescent light field coupling structure of the laser;

[0094] In step S50, the dielectric layer is etched in the processing area of ​​the laser to obtain the N-type evanescent light field coupling structure of the laser;

[0095] In step S60, for the processing area of ​​the laser, a first metal layer is deposited on the P-type evanescent light field coupling structure (the laser does not perform step S20, and the first functional layer does not exist), that is, a P-type electrode metal layer is deposited on the P-type evanescent light field coupling structure;

[0096] In step S70, a second metal layer is deposited on the N-type evanescent light field coupling structure for the processing area of ​​the laser, that is, an N-type electrode metal layer is deposited on the N-type evanescent light field coupling structure;

[0097] In step S80, with respect to the processing area of ​​the laser, a third metal layer is deposited on the P-type electrode metal layer and the N-type electrode metal layer respectively, so as to apply a voltage difference to the P-type evanescent light field coupling structure and the N-type evanescent light field coupling structure, thereby realizing the light emission function of the laser.

[0098] Example 3

[0099] The amplifier is prepared as follows:

[0100] The preparation method of the amplifier is exactly the same as that of the laser, except that in step S10, the amplified ridge waveguide is synchronously obtained when processing the etching area in the processing area of ​​the amplifier, that is, except for the amplified ridge waveguide which is different from the laser ridge waveguide of the laser, the rest of the amplifier is exactly the same, thereby improving the consistency of the device and reducing the optical loss between the two.

[0101] Example 4

[0102] The preparation method of the modulator is as follows:

[0103] In step S10, for the processing area of ​​the modulator, the corresponding etching area is obtained;

[0104] In step S20, with respect to the processing area of ​​the modulator, the etched area is doped to obtain a P-type lightly doped silicon ridge waveguide, a first H+ doped area, and a P-type heavily doped silicon ridge waveguide, that is, the P-type lightly doped silicon ridge waveguide, the first H+ doped area, and the P-type heavily doped silicon ridge waveguide together form a first functional layer of the modulator, that is, a P-type junction of the modulator;

[0105] In step S30, the heterogeneous integration operation is performed normally;

[0106] In step S40, the second wafer is completely etched for the processing area of ​​the modulator, leaving only the dielectric layer;

[0107] In step S50, the dielectric layer is etched for the processing area of ​​the modulator to obtain an N-type evanescent light field coupling structure, and the area of ​​the N-type evanescent light field coupling structure aligned with the first H+ doped area is doped to obtain a second H+ doped area, that is, the N-type evanescent light field coupling structure and its second H+ doped area together form a third functional layer;

[0108] In step S60, for the processing area of ​​the modulator, the first metal layer is deposited on the first functional layer (the modulator does not obtain the second functional layer), that is, the P-type electrode metal layer is deposited on the first functional layer, specifically, the P-type electrode metal layer is deposited on the P-type heavily doped silicon ridge waveguide;

[0109] In step S70, for the processing area of ​​the modulator, the second metal layer is deposited on the third functional layer, that is, the N-type electrode metal layer is deposited on the third functional layer, specifically, the N-type electrode metal layer is bridge-deposited on the N-type evanescent light field coupling structure and the second H+ doped area;

[0110] In step S80, with respect to the processing area of ​​the modulator, a third metal layer is deposited on the P-type electrode metal layer and the N-type electrode metal layer, respectively, so as to apply a voltage difference to the P-type heavily doped silicon ridge waveguide, the N-type evanescent light field coupling structure and the second H+ doped region, thereby realizing the optical modulation function of the modulator.

[0111] Example 5

[0112] The preparation method of the antenna assembly is as follows:

[0113] In step S10, for the processing area of ​​the antenna component, the corresponding etching area is obtained, and the etching area specifically includes the antenna grating;

[0114] The antenna assembly does not perform steps S20 to S80.

[0115] Optionally, in Example 1, Examples 2 to 5 belong to a parallel processing process, in which different operations are performed on different devices in corresponding steps, so that only one processing flow is required to simultaneously complete the processing of all components on the optical device.

[0116] Further, in order to explain and illustrate the distribution position and connection relationship of the components on the optical device, please refer to Figure 2 FIG. 1 is a schematic diagram of a planar structure of a monolithic heterogeneous integrated optical device provided by an embodiment of the present invention.

[0117] Example 6

[0118] The optical device 1 includes a laser 11, an amplifier 12, a modulator 13, an antenna assembly 14, and a connecting waveguide 15 for connecting the various devices.

[0119] Optionally, the laser 11 is connected to multiple amplifiers 12 through a beam-splitting connecting waveguide 15. Any amplifier 12 amplifies the light and adjusts the angle via a corresponding modulator 13 connected to the amplifier 12, and finally transmits the light via a corresponding antenna assembly 14. Since the modulator 13 can be adjusted in two dimensions, all the emitted light can be converged at one point, thereby improving the light emission power of the entire optical device.

[0120] Optionally, when performing step S10, the connecting waveguides between the components are etched.

[0121] Optionally, in step S30, the second wafer disposed on the dielectric layer is heterogeneously integrated with the first wafer using the dielectric layer as a bonding basis, and in step S40, the second wafer is etched separately according to differences in the structures of the components.

[0122] Furthermore, the second wafer may only cover the areas of the laser 11 , the amplifier 12 and the modulator 13 .

[0123] For further information, see Figure 3 Shown is a process diagram for preparing various components in an optical device provided by an embodiment of the present invention.

[0124] Specifically, Figure 3 For explaining Example 2 ( Figure 2 shows the plane of the optical device, and Figure 3 The cross sections of the laser, amplifier and modulator are shown separately for comparison and understanding).

[0125] Furthermore, for different regions:

[0126] In step S10, the laser region acquires the etched region and the laser ridge waveguide in the etched region; the amplifier region acquires the etched region and the amplified ridge waveguide in the etched region; the modulator region acquires the etched region; the antenna component region acquires the etched region and the antenna grating; at the same time, the connecting waveguides of each component are also synchronously etched in step S10;

[0127] In step S20, the laser region and the amplifier region do not perform any operation; the modulator region dopes the etched region to obtain a P-type lightly doped silicon ridge waveguide disposed on one side of the etched region, a first H+ doped region disposed on the other side of the etched region, and a P-type heavily doped silicon ridge waveguide connected to the P-type lightly doped silicon ridge waveguide; the antenna assembly is exited from step S20 because it has been prepared in step S10;

[0128] In step S30, the second wafer disposed on the dielectric layer is heterogeneously integrated with the first wafer using the dielectric layer as a bonding basis;

[0129] In step S40, the laser region and the amplifier region are both etched through the second wafer to obtain (since the laser region and the amplifier are only different in step S10, the other steps are exactly the same, and are subsequently directly expressed as laser region / amplifier region) a P-type evanescent light field coupling structure; the modulator region etches the second wafer;

[0130] In step S50, the dielectric layer of the laser region / amplifier region is etched to obtain an N-type evanescent light field coupling structure; the dielectric layer of the modulator region is etched to obtain an N-type evanescent light field coupling structure, and the region of the N-type evanescent light field coupling structure aligned with the first H+ doped region is doped to obtain a second H+ doped region;

[0131] In step S60, in the laser region / amplifier region, a P-type electrode metal layer is deposited on the P-type evanescent light field coupling structure; in the modulator region, a P-type electrode metal layer is deposited on the P-type heavily doped silicon ridge waveguide;

[0132] In step S70, in the laser region / amplifier region, an N-type electrode metal layer is deposited on the N-type evanescent light field coupling structure; in the modulator region, an N-type electrode metal layer is bridge-deposited on the N-type evanescent light field coupling structure and the second H+ doped region;

[0133] In step S80, in the laser area / amplifier area, the third metal layer is deposited on the first metal layer and the second metal layer respectively to form metal wires of the P junction and the N junction of the PN junction for applying voltage; in the modulator area, the third metal layer is deposited on the first metal layer and the second metal layer respectively to form metal wires of the P junction and the N junction of the PN junction for applying voltage.

[0134] The preparation of the entire optical device can be completed through the above steps.

[0135] It is worth explaining that the deposition of the first metal electrode and the second metal electrode is not restricted by the above process. They can be deposited after the P junction or N junction is prepared. For the consistency of the processing technology, the present invention adopts the above preparation process.

[0136] Optionally, after step S40, a P-type electrode metal layer may be deposited on the P-type evanescent light field coupling structure.

[0137] For further information, see Figure 4 Shown is another process diagram for preparing various components in an optical device provided by an embodiment of the present invention.

[0138] Example 7

[0139] On the basis of Example 1, the present invention is also provided with a heat dissipation layer for dissipating heat from the laser, the amplifier and the modulator, including: S71, etching the first wafer to form a heat sink area; S72, depositing a heat dissipation layer to cover the heat sink area, the first metal layer, the second metal layer, the second functional layer and the third functional layer; S73, opening holes in the heat dissipation layer to at least partially expose the first metal layer and the second metal layer.

[0140] Reference Figure 5 Understanding is:

[0141] In step S71, the first wafer is further etched in the laser region / amplifier region to obtain a heat sink region; the first wafer is further etched in the modulator region to obtain a heat sink region;

[0142] In step S72, in the laser region / amplifier region, a heat dissipation layer is deposited and coated on the heat sink region, the second functional layer, the third functional layer, the first metal layer and the second metal layer; in the modulator region, a heat dissipation layer is deposited and coated on the heat sink region, the first functional layer, the third functional layer, the first metal layer and the second metal layer;

[0143] In step S73, in the laser region / amplifier region, the heat dissipation layer is opened to at least partially expose the first metal layer and the second metal layer; in the modulator region, the heat dissipation layer is opened to at least partially expose the first metal layer and the second metal layer;

[0144] Then, step S80 is performed to deposit a third metal layer on the heat dissipation layer, and the third metal layer is deposited on the first metal layer and the second metal layer respectively to form the corresponding components.

[0145] For further information, see Figure 5 Shown is a schematic diagram of the cross-sectional structure of a laser (a) and an amplifier (b) provided in one embodiment of the present invention.

[0146] Since the laser 11 and the amplifier 12 differ only in the etching area, they are described as a whole:

[0147] The laser 11 / amplifier 12 comprises: a substrate 109, a thermal oxide layer 110 disposed on the substrate 109, a silicon layer 111 disposed on the thermal oxide layer 110, and a laser ridge waveguide 101a (laser, see Figure 5 (a)) / Amplified ridge waveguide 101b (amplifier, see Figure 5 (b)), covered on the laser ridge waveguide 101a (laser, see Figure 5 (a)) / Amplified ridge waveguide 101b (amplifier, see Figure 5 (b)) an N-type evanescent light field coupling structure 104a, a P-type evanescent light field coupling structure 103a disposed on the N-type evanescent light field coupling structure 104a through a structure layer 103b, a P-type electrode metal layer 105a disposed on the P-type evanescent light field coupling structure 103a, an N-type electrode metal layer 106a disposed on both sides of the N-type evanescent light field coupling structure 104a, a heat sink layer 108a disposed in a heat sink region 108 of a thermal oxide layer 110, and a heat sink layer 108a. 08a covers the P-type evanescent light field coupling structure 103a, the N-type evanescent light field coupling structure 104a, the P-type electrode metal layer 105a and the N-type electrode metal layer 106a, and reserves connection holes for the P-type electrode metal layer 105a and the N-type electrode metal layer 106a, and the metal connection layer 107a covering the heat dissipation layer 108a, 107a is divided into two sections, which are respectively connected to the P-type electrode metal layer 105a and the N-type electrode metal layer 106a through the connection holes.

[0148] The substrate 109 , the thermal oxide layer 110 , and the silicon layer 111 are provided by the first wafer, the structural layer 103 b and the P-type evanescent light field coupling structure 103 a are provided by the second wafer, and the N-type evanescent light field coupling structure 104 a is provided by the dielectric layer.

[0149] For further information, see Figure 6 A schematic cross-sectional structure diagram of a modulator provided in one embodiment of the present invention.

[0150] The modulator 13 includes: a substrate 109, a thermal oxide layer 110 disposed on the substrate 109, a silicon layer 111 disposed on the thermal oxide layer 110, and a P-type lightly doped silicon ridge waveguide 102a, a first H+ doped region 102b, and a P-type heavily doped silicon ridge waveguide 102c disposed in an etched region 101 of the silicon layer 111, wherein the P-type lightly doped silicon ridge waveguide 102a is disposed on one side of the etched region 101, and the first H+ doped region 102b is disposed on the On the other side of the etched region 101, an etched gap is provided between the P-type lightly doped silicon ridge waveguide 102a and the first H+ doped region 102b, the P-type heavily doped silicon ridge waveguide 102c is connected to the P-type lightly doped silicon ridge waveguide 102a and is away from the first H+ doped region 102b, the N-type evanescent light field coupling structure 104a bridged between the P-type lightly doped silicon ridge waveguide 102a and the first H+ doped region 102b, and the N-type evanescent light field coupling structure 104a includes an aligned The second H+ doped region 104b in the first H+ doped region 102b, the P-type electrode metal layer 105a disposed in the P-type heavily doped silicon ridge waveguide 102c, the N-type electrode metal layer 106a bridging the N-type evanescent light field coupling structure 104a and the second H+ doped region 104b, the heat dissipation layer 108a disposed in the heat sink region 108 of the thermal oxide layer 110, the heat dissipation layer 108a for the P-type heavily doped silicon ridge waveguide 102c, the P-type lightly doped silicon ridge waveguide 102a, the N-type evanescent light field coupling structure 104a, the second H+ doped region 104b, the P-type electrode metal layer 105a and the N-type electrode metal layer 106a are all covered and connection holes of the P-type electrode metal layer 105a and the N-type electrode metal layer 106a are reserved, and the metal connection layer 107a covering the heat dissipation layer 108a, 107a is divided into two sections, and is respectively connected to the P-type electrode metal layer 105a and the N-type electrode metal layer 106a through the connection holes;

[0151] The substrate 109 , the thermal oxide layer 110 , and the silicon layer 111 are provided by the first wafer, and the N-type evanescent light field coupling structure 104 a is provided by the dielectric layer.

[0152] For further information, see Figure 7 Shown is a schematic cross-sectional structure diagram of an antenna assembly provided in one embodiment of the present invention.

[0153] The antenna assembly includes: a substrate 109, a thermal oxide layer 110 disposed on the substrate 109, a silicon layer 111 disposed on the thermal oxide layer 110, and an etched region 101 disposed on the silicon layer 111, wherein the etched region 101 includes an antenna grating 101c;

[0154] The substrate 109 , the thermal oxide layer 110 , and the silicon layer 111 are provided by a first wafer.

[0155] For further information, see Figure 8 It is a schematic diagram of the light field distribution of a laser (a), an amplifier (b) and a modulator (c) provided in one embodiment of the present invention.

[0156] based on Figure 8 The amplifier ridge waveguide of the amplifier is larger than the laser ridge waveguide of the laser, so that the laser ridge waveguide of the laser limits the light field distribution to the second functional layer (see Figure 8 (a)), so that the amplifier ridge waveguide of the amplifier confines the light field distribution to the first wafer (see Figure 8 (b)), the light field of the modulator is distributed in the second functional layer and the first wafer (see Figure 8 (c)). Therefore, although the laser, the amplifier, and the modulator are fabricated by heterogeneous integration of the first wafer and the second wafer, they realize different light processing functions based on different light field distributions.

[0157] The present invention is described in detail above. The present invention uses specific examples to illustrate the principles and implementation methods of the present invention. The description of the above embodiments is only used to help understand the present invention and its core ideas. It should be pointed out that for ordinary technicians in this technical field, without departing from the principles of the present invention, the present invention can also be improved and modified in a number of ways, and these improvements and modifications also fall within the scope of protection of the claims of the present invention.

Claims

1. A method for preparing a monolithic heterogeneous integrated optical device, characterized in that: include: S10, etching the etching areas corresponding to the components and the connecting waveguides for connecting the components on the first wafer respectively according to the distribution positions and connection relationships of the components on the optical device; S20, according to the difference of the components, doping the etched area in a targeted manner to obtain a first functional layer; S30, using the dielectric layer as a bonding basis, heterogeneously integrating the second wafer disposed on the dielectric layer onto the first wafer; S40, etching the second wafer in a targeted manner according to the difference of the components to obtain a second functional layer; S50, etching the dielectric layer in a targeted manner according to the difference of the components, and then doping the etched dielectric layer in a targeted manner to obtain a third functional layer; S60, depositing a first metal layer on the first functional layer and the second functional layer respectively; S70, depositing a second metal layer on the third functional layer; S80, depositing a third metal layer on the first metal layer and the second metal layer respectively.

2. The method for preparing a monolithic heterogeneous integrated optical device according to claim 1, characterized in that: Before step S80, the method includes: S71, etching the first wafer to form a heat sink area; S72, depositing a heat dissipation layer to cover the heat sink area, the first metal layer, the second metal layer, the second functional layer and the third functional layer; S73, opening holes in the heat dissipation layer to at least partially expose the first metal layer and the second metal layer.

3. The method for preparing a monolithic heterogeneous integrated optical device according to claim 2, characterized in that: The components described include lasers, amplifiers, modulators and antenna assemblies.

4. The method for preparing a monolithic heterogeneous integrated optical device according to claim 3, characterized in that: The preparation method of the laser or the amplifier comprises: In step S10, the etched region includes a ridge waveguide; Step S20 is not executed; In step S40, the second functional layer includes a P-type evanescent light field coupling structure; In step S50, the third functional layer includes an N-type evanescent light field coupling structure; In step S60, the first metal layer includes a P-type electrode metal layer; In step S70, the second metal layer includes an N-type electrode metal layer; In step S80, the third metal layer includes a metal connection layer.

5. The method for preparing a monolithic heterogeneous integrated optical device according to claim 3, characterized in that: The preparation method of the modulator comprises: In step S20, the first functional layer includes a P-type lightly doped silicon ridge waveguide disposed on one side of the etching region, a first H+ doped region disposed on the other side of the etching region, and a P-type heavily doped silicon ridge waveguide connected to the P-type lightly doped silicon ridge waveguide; In step S40, only the second wafer is etched without obtaining the second functional layer; In step S50, the third functional layer includes an N-type evanescent light field coupling structure and a second H+ doped region doped based on the N-type evanescent light field coupling structure and aligned with the first H+ doped region; In step S60, the first metal layer includes a P-type electrode metal layer; In step S70, the second metal layer includes an N-type electrode metal layer; In step S80, the third metal layer includes a metal connection layer.

6. The method for preparing a monolithic heterogeneous integrated optical device according to claim 3, characterized in that: The method for preparing the antenna assembly comprises: In step S10, the etching area includes the antenna grating; The steps after S10 are not executed.

7. A monolithic heterogeneous integrated optical device, characterized in that: Obtained by a method for preparing a monolithic heterogeneous integrated optical device according to any one of claims 1 to 6, comprising: A substrate, prepared based on the first wafer, wherein the substrate includes the etching area; A laser, an amplifier, a modulator and an antenna assembly are arranged on the substrate, and each assembly is connected through the connecting waveguide according to the distribution position and connection relationship; The laser and the amplifier both include: the etched area is provided with a ridge waveguide, an N-type evanescent light field coupling structure covering the ridge waveguide, a P-type evanescent light field coupling structure provided on the N-type evanescent light field coupling structure, an N-type electrode metal layer provided on the N-type evanescent light field coupling structure, a P-type electrode metal layer provided on the P-type evanescent light field coupling structure, and a metal connection layer connected to the N-type electrode metal layer and the P-type electrode metal layer; The modulator comprises: the etched area is provided with a P-type lightly doped silicon ridge waveguide, a P-type heavily doped silicon ridge waveguide and a first H+ doped area, an N-type evanescent light field coupling structure partially covering the P-type lightly doped silicon ridge waveguide, the N-type evanescent light field coupling structure comprises a second H+ doped area and the second H+ doped area is aligned with and covers the first H+ doped area, a P-type electrode metal layer is provided on the P-type heavily doped silicon ridge waveguide, an N-type electrode metal layer is provided on the N-type evanescent light field coupling structure, and a metal connection layer connected to the N-type electrode metal layer and the P-type electrode metal layer; The antenna assembly comprises: the etched area is provided with an antenna grating.

8. The monolithic heterogeneous integrated optical device according to claim 7, characterized in that: include: The laser comprises a single or two or more broadband tunable lasers connected in series; The laser and the amplifier include: a one-to-one connection or a one-to-many connection; The amplifier, modulator and antenna assembly are connected in sequence and correspond one to one.

9. The monolithic heterogeneous integrated optical device according to claim 7, characterized in that: include: The substrate comprises a base, a thermal oxide layer disposed on the base, and a silicon layer disposed on the thermal oxide layer; The P-type evanescent light field coupling structures of the laser, amplifier and modulator are based on III-V group materials.

10. The monolithic heterogeneous integrated optical device according to claim 9, characterized in that: include: The ridge waveguide, connecting waveguide and antenna grating are arranged on the silicon layer; The laser, amplifier and modulator all include a heat sink region, and a heat dissipation layer disposed between the heat sink region and the first metal layer and the second metal layer; The heat sink area of ​​the laser and amplifier is arranged on the thermal oxygen layer; The heat sink area of ​​the modulator is arranged on the silicon layer.

11. The monolithic heterogeneous integrated optical device according to claim 7, characterized in that: include: In the laser, the ridge waveguide has the function of limiting the light field in the direction toward the N-type evanescent light field coupling structure; In the amplifier, the ridge waveguide has a function of confining the light field in a direction toward the substrate.

Images