Intelligent power module, frequency converter and electronic equipment

Abstract

The invention provides an intelligent power module, a frequency converter and electronic equipment, the intelligent power module comprises a three-level inverter circuit and three groups of driving circuits, and the three groups of driving circuits respectively correspond to three phases of bridge arms in the three-level inverter circuit; the three-level inverter circuit converts the direct-current bus voltage into three-level alternating-current voltage through switching on and switching off of an inverter switch in a three-phase bridge arm; the driving circuit adopts a high-voltage driving chip cascading mode to drive an upper bridge arm inversion switch in a corresponding bridge arm, and adopts a low-voltage driving chip to drive a lower bridge arm inversion switch in the corresponding bridge arm. According to the intelligent power module, the frequency converter and the electronic equipment provided by the invention, the problem that the integration level is not improved and the cost is not reduced due to the use of a 1200V HVIC (High Voltage Integrated Circuit) and a 1200V IGBT (Insulated Gate Bipolar Translator) in the existing high-voltage application is solved.

Description

Technical Field

[0001] The present invention relates to the technical field of power electronics, and in particular to an intelligent power module, a frequency converter and electronic equipment. Background Art

[0002] Intelligent Power Module (IPM) is an advanced power switch device structure that integrates logic, control, detection and protection circuits. It is easy to use and not only reduces the size of the system and shortens the development time, but also enhances the reliability of the system, adapting to the development direction of today's power switch devices.

[0003] With the tightening of energy and the development of power electronics, the use of IPM in frequency conversion technology has outstanding advantages in reducing working noise, improving working reliability and efficiency. Therefore, IPM has been widely used in household appliances such as air conditioners. Taking frequency conversion air conditioners as an example, the use of frequency conversion drive to control the speed of the compressor can make the speed of the compressor proportional to the output frequency of the inverter, and the compressor can run at different speeds to adjust the room temperature.

[0004] For household appliances such as air conditioners, there are roughly two types of input power: high voltage 380~480Vac or low voltage 120~220Vac. Correspondingly, the IPM in the air conditioner inverter requires power switching devices with input voltage ratings of 1200V or 600V.

[0005] The existing IPM circuit principle for high voltage 380~480Vac inverter is as follows Figure 1 As shown, the IPM circuit principle for low voltage 120~220Vac inverter is as follows Figure 2 As shown in Figure 2, both use three-phase inverter circuits, but the rated voltage capabilities of the high-voltage driver chip (HVIC) and power switch device (IGBT) used are different; Figure 1 It uses 1200V HVIC to drive 1200V IGBT. Figure 2 A 600V HVIC is used to drive a 600V IGBT.

[0006] Although the existing high-voltage applications have a relatively simple principle, they have high requirements for HVIC. The process complexity of 1200V HVIC is much higher than that of 600V HVIC, and the wafer area is also larger, which is not conducive to miniaturization and failure analysis. In addition, the price of 600V IGBT is significantly lower than that of 1200V IGBT. Therefore, it is beneficial to improve integration and reduce costs to propose a technical solution of using 600V IGBT in various frequency conversion equipment for high-voltage applications. Summary of the invention

[0007] In view of the above-mentioned shortcomings of the prior art, the object of the present invention is to provide an intelligent power module, a frequency converter and an electronic device for solving the problem of using 1200V HVIC and 1200V IGBT in existing high-voltage applications, which is not conducive to improving integration and reducing costs.

[0008] To achieve the above-mentioned object and other related objects, the present invention provides an intelligent power module, the intelligent power module comprising:

[0009] A three-level inverter circuit and three groups of drive circuits, wherein the three groups of drive circuits correspond to the three-phase bridge arms in the three-level inverter circuit respectively;

[0010] The three-level inverter circuit converts the DC bus voltage into a three-level AC voltage by turning on and off the inverter switches in the three-phase bridge arm;

[0011] The driving circuit adopts a cascade mode of high-voltage driving chips to drive the upper bridge arm inverter switch in the corresponding bridge arm, and adopts a low-voltage driving chip to drive the lower bridge arm inverter switch in the corresponding bridge arm.

[0012] Optionally, the three-level inverter circuit includes a diode mid-point clamped three-level inverter.

[0013] Optionally, the driving circuit includes: a first high-voltage driving chip, a second high-voltage driving chip, a third high-voltage driving chip, a fourth high-voltage driving chip, a first low-voltage driving chip, a second low-voltage driving chip, a first bootstrap diode, a second bootstrap diode, a third bootstrap diode, a fourth bootstrap diode, a first bootstrap capacitor, a second bootstrap capacitor, a third bootstrap capacitor and a fourth bootstrap capacitor;

[0014] The low-side power supply terminal of the first high-voltage driver chip is connected to the first power supply voltage, the input terminal is connected to the first driving signal, the common ground terminal is connected to the reference ground, the high-side floating power supply terminal is connected to the low-side power supply terminal of the second high-voltage driver chip, the output terminal is connected to the input terminal of the second high-voltage driver chip, and the high-side floating ground terminal is connected to the common ground terminal of the second high-voltage driver chip; the output terminal of the second high-voltage driver chip generates a first gating signal;

[0015] The first bootstrap diode is connected between the low-side power supply terminal and the high-side floating power supply terminal of the first high-voltage driver chip, the first bootstrap capacitor is connected between the high-side floating power supply terminal and the high-side floating ground terminal of the first high-voltage driver chip, the second bootstrap diode is connected between the low-side power supply terminal and the high-side floating power supply terminal of the second high-voltage driver chip, and the second bootstrap capacitor is connected between the high-side floating power supply terminal and the high-side floating ground terminal of the second high-voltage driver chip;

[0016] The low-side power supply terminal of the third high-voltage driver chip is connected to the second power supply voltage, the input terminal is connected to the second driving signal, the common ground terminal is connected to the reference ground, the high-side floating power supply terminal is connected to the low-side power supply terminal of the fourth high-voltage driver chip, the output terminal is connected to the input terminal of the fourth high-voltage driver chip, and the high-side floating ground terminal is connected to the common ground terminal of the fourth high-voltage driver chip; the output terminal of the fourth high-voltage driver chip generates a second gating signal;

[0017] The third bootstrap diode is connected between the low-side power supply terminal and the high-side floating power supply terminal of the third high-voltage driver chip, the third bootstrap capacitor is connected between the high-side floating power supply terminal and the high-side floating ground terminal of the third high-voltage driver chip, the fourth bootstrap diode is connected between the low-side power supply terminal and the high-side floating power supply terminal of the fourth high-voltage driver chip, and the fourth bootstrap capacitor is connected between the high-side floating power supply terminal and the high-side floating ground terminal of the fourth high-voltage driver chip;

[0018] The low-side power supply terminal of the first low-voltage driver chip is connected to a third power supply voltage, the input terminal is connected to a third drive signal, the common ground terminal is connected to a reference ground, and the output terminal generates a third gating signal;

[0019] The low-side power supply terminal of the second low-voltage driver chip is connected to the third power supply voltage, the input terminal is connected to the fourth drive signal, the common ground terminal is connected to the reference ground, and the output terminal generates a fourth gating signal.

[0020] Optionally, the first power supply voltage, the second power supply voltage and the third power supply voltage are provided by the same voltage source, wherein the high-side floating power supply terminal of the fourth high-voltage driver chip replaces the low-side power supply terminal of the second high-voltage driver chip and is connected to the anode terminal of the second bootstrap diode.

[0021] Optionally, a dual-input-dual-output low-voltage driver chip is used to replace the first low-voltage driver chip and the second low-voltage driver chip, and the driver circuit further includes: a fifth bootstrap diode and a fifth bootstrap capacitor;

[0022] The low-side power supply terminal of the dual-input-dual-output low-voltage driver chip is connected to a third power supply voltage, the first input terminal is connected to a third drive signal, the second input terminal is connected to a fourth drive signal, the common ground terminal is connected to a reference ground, the first output terminal generates a third gating signal, and the second output terminal generates a fourth gating signal;

[0023] The fifth bootstrap diode is connected between the low-side power supply terminal and the high-side floating power supply terminal of the dual-input-dual-output low-voltage driver chip, and the fifth bootstrap capacitor is connected between the high-side floating power supply terminal and the high-side floating ground terminal of the dual-input-dual-output low-voltage driver chip.

[0024] Optionally, the first power supply voltage, the second power supply voltage and the third power supply voltage are provided by the same voltage source, wherein the high-side floating power supply terminal of the fourth high-voltage driver chip replaces the low-side power supply terminal of the second high-voltage driver chip to be connected to the anode terminal of the second bootstrap diode, and the high-side floating power supply terminal of the dual-input-dual-output low-voltage driver chip replaces the low-side power supply terminal of the fourth high-voltage driver chip to be connected to the anode terminal of the fourth bootstrap diode.

[0025] Optionally, the first power supply voltage, the second power supply voltage and the third power supply voltage are respectively provided by three independent voltage sources.

[0026] The present invention further provides a frequency converter, the frequency converter comprising the intelligent power module as described in any one of the above.

[0027] Optionally, the frequency converter further includes a microcontroller, configured to provide a corresponding driving signal to the intelligent power module.

[0028] The present invention also provides an electronic device, which includes the frequency converter as described above.

[0029] As described above, the intelligent power module, inverter and electronic device of the present invention, through the design of a three-level inverter circuit and a drive circuit, can use IGBTs and HVICs with relatively low rated voltages in high-voltage applications, which is beneficial to the miniaturization and low cost of the intelligent power module; in addition, the process complexity of the low rated voltage HVIC is relatively low, which is beneficial to the high reliability of the intelligent power module. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] Figure 1 Shown is a schematic diagram of the structure of an intelligent power module of an inverter in an existing high voltage application.

[0031] Figure 2 Shown is a schematic diagram of the structure of an intelligent power module of an inverter in an existing low-voltage application.

[0032] Figure 3 Shown is a schematic diagram of the structure of the intelligent power module in the first embodiment of the present invention.

[0033] Figure 4 It is a schematic structural diagram of a three-level inverter circuit in Embodiment 1 of the present invention.

[0034] Figures 5 to 8 It is a schematic diagram of the structure of the driving circuit in the first embodiment of the present invention.

[0035] Fig. 9 Shown is a structural schematic diagram of the frequency converter in the second embodiment of the present invention.

[0036] Fig.10Shown is a schematic diagram of the structure of an electronic device in Embodiment 3 of the present invention.

[0037] Component number description

[0038] 100 Inverter

[0039] 110 Intelligent Power Module

[0040] 111 Three-level inverter circuit

[0041] 112 drive circuit

[0042] 120 Microcontroller

[0043] 200 Parts to be driven DETAILED DESCRIPTION

[0044] The following describes the embodiments of the present invention through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and the details in this specification can also be modified or changed in various ways based on different viewpoints and applications without departing from the spirit of the present invention.

[0045] See also Figures 1 to 10 It should be noted that the illustrations provided in this embodiment are only used to illustrate the basic concept of the present invention in a schematic manner, and the illustrations only show components related to the present invention rather than being drawn according to the number, shape and size of components in actual implementation. In actual implementation, the form, quantity and proportion of each component may be changed arbitrarily, and the component layout may also be more complicated.

[0046] Embodiment 1

[0047] like Figure 3 As shown, this embodiment provides an intelligent power module 110, including a three-level inverter circuit 111 and three groups of drive circuits 112, and the three groups of drive circuits 112 correspond to the three-phase bridge arms in the three-level inverter circuit 111 respectively.

[0048] The three-level inverter circuit 111 converts the DC bus voltage into a three-level AC voltage by turning on and off the inverter switches in the three-phase bridge arms.

[0049] As an example, Figure 4 As shown, the three-level inverter circuit 111 is implemented by a diode midpoint clamped three-level inverter. The diode midpoint clamped three-level inverter includes: capacitors C1-C2, inverter switches SA1-SC4, and clamping diodes D1-D6;

[0050] Capacitors C1 and C2 are connected in series between the DC bus voltage VDC and the reference ground; in the U-phase bridge arm, inverter switches SA1-SA4 are connected in series between the DC bus voltage VDC and the reference ground, and the midpoints of the upper bridge arm inverter switches SA1 and SA2 and the midpoints of the lower bridge arm inverter switches SA3 and SA4 are connected to the midpoints of capacitors C1 and C2 through clamping diodes D1 and D2, respectively; in the V-phase bridge arm, inverter switches SB1-SB4 are connected in series between the DC bus voltage VDC and the reference ground. The midpoint of the upper bridge arm inverter switches SB1 and SB2 and the midpoint of the lower bridge arm inverter switches SB3 and SB4 are connected to the midpoint of the capacitors C1 and C2 through clamping diodes D3 and D4 respectively; in the W phase bridge arm, the inverter switches SC1~SC4 are connected in series between the DC bus voltage VDC and the reference ground, and the midpoint of the upper bridge arm inverter switches SC1 and SC2 and the midpoint of the lower bridge arm inverter switches SC3 and SC4 are connected to the midpoint of the capacitors C1 and C2 through clamping diodes D5 and D6 respectively.

[0051] Among them, C1=C2, the voltage on each capacitor is half of the DC bus voltage VDC; through the corresponding clamping diode, the output voltage of each phase bridge arm is clamped at the DC side midpoint potential (i.e. the midpoint potential of capacitors C1 and C2), so that the voltage on each inverter switch is limited to a capacitor voltage. In addition, in different switching states, the phase voltage is VDC / 2, 0, -VDC / 2, and the line voltage is synthesized by the phase voltage, with a total of five levels of VDC, VDC / 2, 0, -VDC / 2, and -VDC. In practical applications, inverter switches SA1~SC4 are generally implemented with IGBTs.

[0052] The driving circuit 112 uses a cascade of high-voltage driving chips to drive the upper bridge arm inverter switch in the corresponding bridge arm, and uses a low-voltage driving chip to drive the lower bridge arm inverter switch in the corresponding bridge arm.

[0053] As an example, Figure 5 As shown, the driving circuit 112 includes: a first high-voltage driving chip HVIC1, a second high-voltage driving chip HVIC2, a third high-voltage driving chip HVIC3, a fourth high-voltage driving chip HVIC4, a first low-voltage driving chip LVIC1, a second low-voltage driving chip LVIC2, a first bootstrap diode DG1, a second bootstrap diode DG2, a third bootstrap diode DG3, a fourth bootstrap diode DG4, a first bootstrap capacitor CG1, a second bootstrap capacitor CG2, a third bootstrap capacitor CG3 and a fourth bootstrap capacitor CG4;

[0054] The low-side power supply terminal (i.e., VCC terminal) of the first high-voltage driver chip HVIC1 is connected to the first power supply voltage VCC1, the input terminal (i.e., IN terminal) is connected to the first drive signal Gate-SA1, the common ground terminal (i.e., VSS terminal) is connected to the reference ground, the high-side floating power supply terminal (i.e., VB terminal) is connected to the low-side power supply terminal (i.e., VCC terminal) of the second high-voltage driver chip HVIC2, the output terminal (i.e., OUT terminal) is connected to the input terminal (i.e., IN terminal) of the second high-voltage driver chip HVIC2, and the high-side floating ground terminal (i.e., VS terminal) is connected to the common ground terminal (i.e., VSS terminal) of the second high-voltage driver chip HVIC2; the output terminal (i.e., OUT terminal) of the second high-voltage driver chip HVIC2 generates the first gate signal SA1-G;

[0055] The first bootstrap diode DG1 is connected between the low-side power supply terminal (i.e., VCC terminal) and the high-side floating power supply terminal (i.e., VB terminal) of the first high-voltage driver chip HVIC1. For example, the anode terminal of the first bootstrap diode DG1 is connected to the low-side power supply terminal (i.e., VCC terminal) of the first high-voltage driver chip HVIC1, and the cathode terminal is connected to the high-side floating power supply terminal (i.e., VB terminal) of the first high-voltage driver chip HVIC1. The first bootstrap capacitor CG1 is connected between the high-side floating power supply terminal (i.e., VB terminal) and the high-side floating ground terminal (i.e., VS terminal) of the first high-voltage driver chip HVIC1. The second bootstrap diode DG2 is connected between the low-side power supply terminal (i.e., the VCC terminal) and the high-side floating power supply terminal (i.e., the VB terminal) of the second high-voltage driver chip HVIC2, such as, the anode terminal of the second bootstrap diode DG2 is connected to the low-side power supply terminal (i.e., the VCC terminal) of the second high-voltage driver chip HVIC2, and the cathode terminal is connected to the high-side floating power supply terminal (i.e., the VB terminal) of the second high-voltage driver chip HVIC2, and the second bootstrap capacitor CG2 is connected between the high-side floating power supply terminal (i.e., the VB terminal) and the high-side floating ground terminal (i.e., the VS terminal) of the second high-voltage driver chip HVIC2;

[0056] The low-side power supply terminal (i.e., VCC terminal) of the third high-voltage driver chip HVIC3 is connected to the second power supply voltage VCC2, the input terminal (i.e., IN terminal) is connected to the second drive signal Gate-SA2, the common ground terminal (i.e., VSS terminal) is connected to the reference ground, the high-side floating power supply terminal (i.e., VB terminal) is connected to the low-side power supply terminal (i.e., VCC terminal) of the fourth high-voltage driver chip HVIC4, the output terminal (i.e., OUT terminal) is connected to the input terminal (i.e., IN terminal) of the fourth high-voltage driver chip HVIC4, and the high-side floating ground terminal (i.e., VS terminal) is connected to the common ground terminal (i.e., VS terminal) of the fourth high-voltage driver chip HVIC4; the output terminal (i.e., OUT terminal) of the fourth high-voltage driver chip HVIC4 generates the second gate signal SA2-G;

[0057] The third bootstrap diode DG3 is connected between the low-side power supply terminal (i.e., VCC terminal) and the high-side floating power supply terminal (i.e., VB terminal) of the third high-voltage driver chip HVIC3. For example, the anode terminal of the third bootstrap diode DG3 is connected to the low-side power supply terminal (i.e., VCC terminal) of the third high-voltage driver chip HVIC3, and the cathode terminal is connected to the high-side floating power supply terminal (i.e., VB terminal) of the third high-voltage driver chip HVIC3. The third bootstrap capacitor CG3 is connected between the high-side floating power supply terminal (i.e., VB terminal) and the high-side floating ground terminal (i.e., VS terminal) of the third high-voltage driver chip HVIC3. The fourth bootstrap diode DG4 is connected between the low-side power supply terminal (i.e., the VCC terminal) and the high-side floating power supply terminal (i.e., the VB terminal) of the fourth high-voltage driver chip HVIC4, such as, the anode terminal of the fourth bootstrap diode DG4 is connected to the low-side power supply terminal (i.e., the VCC terminal) of the fourth high-voltage driver chip HVIC4, the cathode terminal is connected to the high-side floating power supply terminal (i.e., the VB terminal) of the fourth high-voltage driver chip HVIC4, and the fourth bootstrap capacitor CG4 is connected between the high-side floating power supply terminal (i.e., the VB terminal) and the high-side floating ground terminal (i.e., the VS terminal) of the fourth high-voltage driver chip HVIC4;

[0058] The low-side power supply terminal (i.e., VCC terminal) of the first low-voltage driver chip LVIC1 is connected to the third power supply voltage VCC3, the input terminal (i.e., IN terminal) is connected to the third drive signal Gate-SA3, the common ground terminal (i.e., VSS terminal) is connected to the reference ground, and the output terminal (i.e., OUT terminal) generates a third gate signal SA3-G;

[0059] The low-side power supply terminal (i.e., the VCC terminal) of the second low-voltage driver chip LVIC2 is connected to the third power supply voltage VCC3, the input terminal (i.e., the IN terminal) is connected to the fourth drive signal Gate-SA4, the common ground terminal (i.e., the VSS terminal) is connected to the reference ground, and the output terminal (i.e., the OUT terminal) generates a fourth gating signal SA4-G.

[0060] In actual applications, the high-side floating end (i.e., VS end) of the second high-voltage driver chip HVIC2, the fourth high-voltage driver chip HVIC4, the first low-voltage driver chip LVIC1 and the second low-voltage driver chip LVIC2 are also connected to the emitter of the inverter switch in the corresponding bridge arm, such as, the high-side floating end (i.e., VS end) of the second high-voltage driver chip HVIC2 is connected to the emitter of the first upper bridge arm inverter switch in the corresponding bridge arm, the high-side floating end (i.e., VS end) of the fourth high-voltage driver chip HVIC4 is connected to the emitter of the second upper bridge arm inverter switch in the corresponding bridge arm, the high-side floating end (i.e., VS end) of the first low-voltage driver chip LVIC1 is connected to the emitter of the first lower bridge arm inverter switch in the corresponding bridge arm, and the high-side floating end (i.e., VS end) of the second low-voltage driver chip LVIC2 is connected to the emitter of the second lower bridge arm inverter switch in the corresponding bridge arm.

[0061] The first power supply voltage VCC1 , the second power supply voltage VCC2 and the third power supply voltage VCC3 are respectively provided by three independent voltage sources, so as to electrically isolate the inverter switches of the corresponding bridge arms in the three-level inverter circuit 111 .

[0062] In order to simplify the complexity of the power supply, such as Figure 6 As shown, the first power supply voltage VCC1, the second power supply voltage VCC2 and the third power supply voltage VCC3 are provided by the same voltage source. At this time, the high-side floating power supply terminal (i.e., the VB terminal) of the fourth high-voltage driver chip HVIC4 replaces the low-side power supply terminal (i.e., the VCC terminal) of the second high-voltage driver chip HVIC2 to connect the anode terminal of the second bootstrap diode DG2. That is, the anode terminal of the second bootstrap diode DG2 is no longer connected to the low-side power supply terminal (i.e., the VCC terminal) of the second high-voltage driver chip HVIC2, but is connected to the high-side floating power supply terminal (i.e., the VB terminal) of the fourth high-voltage driver chip HVIC4.

[0063] As another example, Figure 7 As shown, a dual-input-dual-output low-voltage driver chip LVIC is used to replace the first low-voltage driver chip LVIC1 and the second low-voltage driver chip LVIC2, and the driver circuit 112 further includes: a fifth bootstrap diode DG5 and a fifth bootstrap capacitor CG5;

[0064] The low-side power supply terminal (i.e., VCC terminal) of the dual-input-dual-output low-voltage driver chip LVIC is connected to the third power supply voltage VCC3, the first input terminal (i.e., IN1 terminal) is connected to the third drive signal Gate-SA3, the second input terminal (i.e., IN2 terminal) is connected to the fourth drive signal Gate-SA4, the common ground terminal (i.e., VSS terminal) is connected to the reference ground, the first output terminal (i.e., OUT1 terminal) generates the third gate signal SA3-G, and the second output terminal (i.e., OUT2 terminal) generates the fourth gate signal SA4-G;

[0065] The fifth bootstrap diode DG5 is connected between the low-side power supply terminal (i.e., the VCC terminal) and the high-side floating power supply terminal (i.e., the VB terminal) of the dual-input-dual-output low-voltage driver chip LVIC, and the fifth bootstrap capacitor CG5 is connected between the high-side floating power supply terminal (i.e., the VB terminal) and the high-side floating ground terminal (i.e., the VS terminal) of the dual-input-dual-output low-voltage driver chip LVIC.

[0066] In practical applications, when a dual-input-dual-output low-voltage driver chip LVIC is used to replace the first low-voltage driver chip LVIC1 and the second low-voltage driver chip LVIC2, the high-side floating terminal (i.e., the VS terminal) of the dual-input-dual-output low-voltage driver chip LVIC is connected to the emitter of the first lower bridge arm inverter switch in the corresponding bridge arm.

[0067] The first power supply voltage VCC1 , the second power supply voltage VCC2 and the third power supply voltage VCC3 are respectively provided by three independent voltage sources, so as to electrically isolate the inverter switches of the corresponding bridge arms in the three-level inverter circuit 111 .

[0068] In order to simplify the complexity of the power supply, such as Figure 8 As shown, the first power supply voltage VCC1, the second power supply voltage VCC2 and the third power supply voltage VCC3 are provided by the same voltage source, wherein the high-side floating power supply terminal (i.e., VB terminal) of the fourth high-voltage driver chip HVIC4 replaces the low-side power supply terminal (i.e., VCC terminal) of the second high-voltage driver chip HVIC2 to connect to the anode terminal of the second bootstrap diode DG2, and the high-side floating power supply terminal (i.e., VB terminal) of the dual-input-dual-output low-voltage driver chip LVIC replaces the low-side power supply terminal (i.e., VCC terminal) of the fourth high-voltage driver chip HVIC4 to connect to the anode terminal of the fourth bootstrap diode DG4, that is, the anode terminal of the second bootstrap diode DG2 is no longer connected to the low-side power supply terminal (i.e., VCC terminal) of the second high-voltage driver chip HVIC2, but is connected to the high-side floating power supply terminal (i.e., VB terminal) of the fourth high-voltage driver chip HVIC4, and the anode terminal of the fourth bootstrap diode DG4 is no longer connected to the low-side power supply terminal (i.e., VCC terminal) of the fourth high-voltage driver chip HVIC4, but is connected to the high-side floating power supply terminal (i.e., VB terminal) of the dual-input-dual-output low-voltage driver chip LVIC.

[0069] Next, taking the high voltage 380-480Vac application as an example, the advantages of the intelligent power module of this embodiment are described in combination with the prior art.

[0070] Prior art: For high voltage 380-480Vac applications, in conventional intelligent power modules, each inverter switch of the inverter part is implemented using 1200V IGBT, and the drive part, especially the drive of the upper bridge arm inverter switch, is implemented using 1200VHVIC.

[0071] This application: For high voltage 380-480Vac applications, in the intelligent power module of this embodiment, each inverter switch of the inverter part is implemented by 600V IGBT, and the driving part, especially the driving of the upper bridge arm inverter switch, is implemented by two 600V HVIC cascades.

[0072] It can be seen that compared with the prior art, the intelligent power module of the present application is implemented using 600V IGBT and 600V HVIC, which can significantly improve its integration in practical applications, reduce product R&D and design costs, and has a higher cost-effectiveness.

[0073] Embodiment 2

[0074] like Fig. 9As shown, this embodiment provides a frequency converter 100, including the intelligent power module 110 as described in the first embodiment; further, it also includes a microcontroller 120.

[0075] The microcontroller 120 is used to provide corresponding drive signals to the intelligent power module 110. In fact, the microcontroller 120 provides four drive signals to each group of drive circuits 112 in the intelligent power module 110, and the microcontroller 120 provides a total of twelve drive signals. The intelligent power module 110 performs inverter control according to the corresponding drive signals provided by the microcontroller 120 to generate a three-level AC voltage.

[0076] Embodiment 3

[0077] like Fig.10 As shown, this embodiment provides an electronic device, including the inverter 100 as described in the second embodiment, and further including a component to be driven 200.

[0078] When the electronic device is a variable frequency air conditioner or a variable frequency refrigerator, the driven component 200 is a compressor, and the three-level AC voltage output by the inverter 100 drives the compressor 20a to run at different speeds, thereby realizing variable frequency regulation;

[0079] When the electronic device is a variable frequency range hood, the component to be driven 200 is a motor, and the three-level AC voltage output by the inverter 100 drives the motor to run at different speeds, thereby realizing variable frequency regulation.

[0080] In summary, the intelligent power module, frequency converter and electronic device of the present invention can use IGBT and HVIC with relatively low rated voltage in high voltage applications through the design of three-level inverter circuit and drive circuit, which is conducive to the miniaturization and low cost of the intelligent power module; in addition, the process complexity of the low rated voltage HVIC is relatively low, which is conducive to the high reliability of the intelligent power module. Therefore, the present invention effectively overcomes various shortcomings in the prior art and has high industrial utilization value.

[0081] The above embodiments are merely illustrative of the principles and effects of the present invention, and are not intended to limit the present invention. Anyone familiar with the art may modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by a person of ordinary skill in the art without departing from the spirit and technical concept disclosed by the present invention shall still be covered by the claims of the present invention.

Claims

1. An intelligent power module, characterized in that: The intelligent power module comprises: A three-level inverter circuit and three groups of drive circuits, wherein the three groups of drive circuits correspond to the three-phase bridge arms in the three-level inverter circuit respectively; The three-level inverter circuit converts the DC bus voltage into a three-level AC voltage by turning on and off the inverter switches in the three-phase bridge arm; The driving circuit adopts a cascade mode of high-voltage driving chips to drive the upper bridge arm inverter switch in the corresponding bridge arm, and adopts a low-voltage driving chip to drive the lower bridge arm inverter switch in the corresponding bridge arm.

2. The intelligent power module according to claim 1, characterized in that: The three-level inverter circuit includes a diode mid-point clamped three-level inverter.

3. The intelligent power module according to claim 1, characterized in that: The driving circuit comprises: a first high-voltage driving chip, a second high-voltage driving chip, a third high-voltage driving chip, a fourth high-voltage driving chip, a first low-voltage driving chip, a second low-voltage driving chip, a first bootstrap diode, a second bootstrap diode, a third bootstrap diode, a fourth bootstrap diode, a first bootstrap capacitor, a second bootstrap capacitor, a third bootstrap capacitor and a fourth bootstrap capacitor; The low-side power supply terminal of the first high-voltage driver chip is connected to the first power supply voltage, the input terminal is connected to the first driving signal, the common ground terminal is connected to the reference ground, the high-side floating power supply terminal is connected to the low-side power supply terminal of the second high-voltage driver chip, the output terminal is connected to the input terminal of the second high-voltage driver chip, and the high-side floating ground terminal is connected to the common ground terminal of the second high-voltage driver chip; the output terminal of the second high-voltage driver chip generates a first gating signal; The first bootstrap diode is connected between the low-side power supply terminal and the high-side floating power supply terminal of the first high-voltage driver chip, the first bootstrap capacitor is connected between the high-side floating power supply terminal and the high-side floating ground terminal of the first high-voltage driver chip, the second bootstrap diode is connected between the low-side power supply terminal and the high-side floating power supply terminal of the second high-voltage driver chip, and the second bootstrap capacitor is connected between the high-side floating power supply terminal and the high-side floating ground terminal of the second high-voltage driver chip; The low-side power supply terminal of the third high-voltage driver chip is connected to the second power supply voltage, the input terminal is connected to the second driving signal, the common ground terminal is connected to the reference ground, the high-side floating power supply terminal is connected to the low-side power supply terminal of the fourth high-voltage driver chip, the output terminal is connected to the input terminal of the fourth high-voltage driver chip, and the high-side floating ground terminal is connected to the common ground terminal of the fourth high-voltage driver chip; the output terminal of the fourth high-voltage driver chip generates a second gating signal; The third bootstrap diode is connected between the low-side power supply terminal and the high-side floating power supply terminal of the third high-voltage driver chip, the third bootstrap capacitor is connected between the high-side floating power supply terminal and the high-side floating ground terminal of the third high-voltage driver chip, the fourth bootstrap diode is connected between the low-side power supply terminal and the high-side floating power supply terminal of the fourth high-voltage driver chip, and the fourth bootstrap capacitor is connected between the high-side floating power supply terminal and the high-side floating ground terminal of the fourth high-voltage driver chip; The low-side power supply terminal of the first low-voltage driver chip is connected to a third power supply voltage, the input terminal is connected to a third drive signal, the common ground terminal is connected to a reference ground, and the output terminal generates a third gating signal; The low-side power supply terminal of the second low-voltage driver chip is connected to the third power supply voltage, the input terminal is connected to the fourth drive signal, the common ground terminal is connected to the reference ground, and the output terminal generates a fourth gating signal.

4. The intelligent power module according to claim 3, characterized in that: The first power supply voltage, the second power supply voltage and the third power supply voltage are provided by the same voltage source, wherein the high-side floating power supply terminal of the fourth high-voltage driver chip replaces the low-side power supply terminal of the second high-voltage driver chip and is connected to the anode terminal of the second bootstrap diode.

5. The intelligent power module according to claim 3, characterized in that: A dual-input-dual-output low-voltage driver chip is used to replace the first low-voltage driver chip and the second low-voltage driver chip, and the driver circuit further includes: a fifth bootstrap diode and a fifth bootstrap capacitor; The low-side power supply terminal of the dual-input-dual-output low-voltage driver chip is connected to a third power supply voltage, the first input terminal is connected to a third drive signal, the second input terminal is connected to a fourth drive signal, the common ground terminal is connected to a reference ground, the first output terminal generates a third gating signal, and the second output terminal generates a fourth gating signal; The fifth bootstrap diode is connected between the low-side power supply terminal and the high-side floating power supply terminal of the dual-input-dual-output low-voltage driver chip, and the fifth bootstrap capacitor is connected between the high-side floating power supply terminal and the high-side floating ground terminal of the dual-input-dual-output low-voltage driver chip.

6. The intelligent power module according to claim 5, characterized in that: The first power supply voltage, the second power supply voltage and the third power supply voltage are provided by the same voltage source, wherein the high-side floating power supply terminal of the fourth high-voltage driver chip replaces the low-side power supply terminal of the second high-voltage driver chip to be connected to the anode terminal of the second bootstrap diode, and the high-side floating power supply terminal of the dual-input-dual-output low-voltage driver chip replaces the low-side power supply terminal of the fourth high-voltage driver chip to be connected to the anode terminal of the fourth bootstrap diode.

7. The intelligent power module according to claim 3 or 5, characterized in that: The first power supply voltage, the second power supply voltage and the third power supply voltage are respectively provided by three independent voltage sources.

8. A frequency converter, characterized in that: The frequency converter comprises the intelligent power module as claimed in any one of claims 1 to 7.

9. The frequency converter according to claim 8, characterized in that: The frequency converter also includes a microcontroller, which is used to provide a corresponding driving signal to the intelligent power module.

10. An electronic device, characterized in that: The electronic device comprises the frequency converter according to claim 8 or 9.

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