Gallium nitride millimeter wave linear power amplifier based on analog predistorter

Abstract

The invention relates to the field of communication, in particular to a gallium nitride millimeter wave linear power amplifier based on an analog predistorter. An improved Doherty structure is adopted, and the device comprises an analog predistorter, a power divider, a carrier amplifier branch and a peak amplifier branch. The carrier amplifier branch comprises an input matching network, a stabilizing network, a carrier amplifier, an output matching network, a capacitor and a microstrip line; the peak amplifier branch comprises an input matching network, a stabilizing network, a first peak amplifier and a second peak amplifier; the carrier amplifier branch and the peak amplifier branch are connected in parallel, then connected in series with the microstrip line, and connected in parallel with the capacitor and the resistor. A carrier amplifier tube core and a peak amplifier tube core are both GaN HEMT, and high efficiency can still be kept within a certain range of peak power back-off. And the analog predistorter is combined with the Doherty structure amplifier to cope with the amplification of a high peak-to-average ratio signal, so that the effects of high efficiency and high linearity can be achieved.

Description

Technical Field

[0001] The present invention relates to the field of communications, and in particular to a gallium nitride millimeter wave linear power amplifier based on an analog predistorter. Background Art

[0002] In recent years, with the advancement of communication technology, power amplifiers have gradually developed in the direction of miniaturization, and high power, small size, high stability, and wide bandwidth have become inevitable requirements. Whether it is airborne, shipborne, satellite-borne, land-based phased array radars, electronic countermeasures and military communications in the military field, or 5G communications, weather radars, and satellite communication transmission systems in the civilian field, power amplifiers with wider bandwidths, smaller sizes, higher power, and higher stability are often required. The successful development of gallium nitride high-power amplifiers has made these requirements possible.

[0003] As an indispensable and important part of the transceiver system, the performance of the power amplifier will directly affect the performance of the transmitter, and then affect the entire communication system. Moreover, the power amplifier is the main energy-consuming component in the transceiver system, accounting for about 85% of the energy consumption of the entire system. Its efficiency plays a vital role in reducing the energy consumption of the system. Therefore, it is of great significance to improve the working bandwidth, efficiency and output power of the power amplifier.

[0004] In order to increase the information transmission rate, various modulation methods such as QPSK, OFDM, QAM, etc. are applied to communication systems. These signals with high peak-to-average ratios pose greater challenges to the linearity and efficiency of power amplifiers. Traditional Doherty structure amplifiers can well respond to the efficiency problem under high peak ratio power back-off, but they also bring about the problem of linearity degradation. Summary of the invention

[0005] The purpose of the present invention is to solve the above-mentioned related problems and design a gallium nitride millimeter wave linear power amplifier based on an analog predistorter. To achieve the above-mentioned purpose, the present invention provides the following solutions:

[0006] A gallium nitride millimeter wave linear power amplifier based on an analog predistorter, the power amplifier is a power amplifier of an improved Doherty structure, comprising an input end, an analog predistorter, a power divider, a carrier amplifier branch, and a peak amplifier branch; the input end, the analog predistorter, and the power divider are connected in series, the carrier amplifier branch and the peak amplifier branch are connected in parallel, and then connected in series with the power divider;

[0007] The carrier amplifier branch includes a carrier amplifier branch input matching network, a carrier amplifier branch stabilizing network, a carrier amplifier, a carrier amplifier branch output matching network, a first capacitor, a first microstrip line, and a second capacitor;

[0008] The peak amplifier branch includes a peak amplifier branch input matching network, a peak amplifier branch stabilizing network, a first peak amplifier, and a second peak amplifier;

[0009] The carrier amplifier branch and the peak amplifier branch are connected in parallel and then connected in series with the second microstrip line. The second microstrip line and the output end are connected in series. Between the second microstrip line and the output end, a third capacitor and a resistor are connected in parallel with the ground.

[0010] As a further improvement of the technical solution, the carrier amplifier and the peak amplifier are both GaN HEMT.

[0011] As a further improvement of the technical solution, the predistorter includes a first Schottky diode SD1, a first capacitor C1, a first microstrip line TL1, a second microstrip line TL2, a second capacitor C2, and a second Schottky diode SD2 connected in series in the input and output main circuits; a series circuit consisting of a DC power supply VCC1 and a first radio frequency choke coil RFC1 is connected in parallel between the input and the first Schottky diode SD1; a capacitor C1 is connected in parallel at both ends of the first Schottky diode SD1 p1 ; A fourth RF choke coil RFC4 is connected in parallel between the first capacitor C1 and the first microstrip line TL1; a branch consisting of a reactor L1, a DC power supply VCC3, a third RF choke coil RFC3, and a varactor diode V1 is connected in parallel between the first microstrip line TL1 and the second microstrip line TL2, the DC power supply VCC3 and the third RF choke coil RFC3 are connected in series and then connected to one end of the reactor L1, the varactor diode V1 is connected in parallel to the branch consisting of the DC power supply VCC3 and the third RF choke coil RFC3, and the other end of the reactor L1 is connected between the first microstrip line TL1 and the second microstrip line TL2; a capacitor C is connected in parallel at both ends of the second Schottky diode SD2 p2 A series circuit consisting of a DC power supply VCC2 and a third RF choke coil RFC2 is connected in parallel between the second capacitor C2 and the second Schottky diode SD2; a fifth RF choke coil RFC5 is connected in parallel between the output end and the second Schottky diode SD2.

[0012] As a further improvement of the technical solution, the power divider is composed of a reactor L w1 , L w2 , L w3 , L w4 , capacitor C w1 , C w2 , C w3 , C w4 , resistor R w composition;

[0013] The reactor L w1, L w2 , L w3 , L w4 Connected into a ring, the power divider input end is connected to L w1 , L w4 The carrier amplifier branch is connected to the reactor L w1 , L w2 The peak amplifier branch is connected to the reactor L w2 , L w3 Between, the resistor R w One end is connected to the reactor L w3 , L w4 The other end is grounded;

[0014] The capacitor C w1 One end is connected to the input end of the power divider, the reactor L w1 、Reactor L w4 The other end of the capacitor C is grounded. w2 One end is connected to the carrier amplifier branch, the reactor L w1 、Reactor L w2 The other end of the capacitor C is grounded. w3 One end is connected to the peak amplifier branch, the reactor L w2 、Reactor L w3 The other end of the capacitor C is grounded. w4 One end is connected to the resistor R w 、Reactor L w3 、Reactor L w4 connection point and the other end is grounded.

[0015] As a further improvement of the technical solution, the carrier amplifier branch input matching network is composed of a microstrip line TL CIMN1 TL CIMN2 TL CIMN3 The carrier amplifier branch input matching network is connected in series with a microstrip line TL between the input and output ends. CIMN1 TL CIMN2 , the TL CIMN3 One end is connected to the microstrip line TL CIMN1 TL CIMN2 The other end is connected to the DC power supply VCC CIMN ;

[0016] The peak amplifier branch input matching network consists of a microstrip line TL PIMN1 TL PIMN2 TL PIMN3 The peak amplifier branch input matching network is connected in series with a microstrip line TL between the input and output ends. PIMN1TL PIMN2 , the TL PIMN3 One end is connected to the microstrip line TL PIMN1 TL PIMN2 The other end is connected to the DC power supply VCC PIMN .

[0017] As a further improvement of the technical solution, the carrier amplifier branch stabilization network is composed of capacitor C CSN , resistor R CSN and microstrip line TL CSN Composition, the capacitor C CSN and resistor R CSN After parallel connection, one end is connected to the input end of the carrier amplifier branch stabilization network, and the other end is connected to the microstrip line TL CSN connection, the microstrip line TL CSN The other end is connected to the output end of the carrier amplifier branch stabilization network;

[0018] The peak amplifier branch stabilization network consists of capacitor C PSN , resistor R PSN and microstrip line TL PSN Composition, the capacitor C PSN and resistor R PSN After parallel connection, one end is connected to the input end of the peak amplifier branch stabilization network, and the other end is connected to the microstrip line TL PSN connection, the microstrip line TL PSN The other end is connected to the output end of the peak amplifier branch stabilization network.

[0019] As a further improvement of the technical solution, the carrier amplifier branch output matching network is composed of a microstrip line TL COMN1 TL COMN2 TL COMN3 TL COMN4 and capacitor C COMN The microstrip line TL COMN1 TL COMN2 TL COMN3 TL COMN4 One end is connected in star shape, TL COMN1 The other end is connected to the input of the carrier amplifier branch output matching network, TL COMN2 The other end is connected to the DC power supply VCC COMN Connect, TL COMN3 The other end is connected in series with capacitor C COMN Then connect the output of the carrier amplifier branch output matching network, TL COMN4 The other end is open;

[0020] The peak amplifier branch output matching network consists of a microstrip line TL POMN1TL POMN2 TL POMN3 TL POMN4 and capacitor C POMN The microstrip line TL POMN1 TL POMN2 TL POMN3 TL POMN4 One end is connected in star shape, TL POMN1 The other end is connected to the input of the peak amplifier branch output matching network, TL POMN2 The other end is connected to the DC power supply VCC POMN Connect, TL POMN3 The other end is connected in series with capacitor C POMN Then connect the output of the peak amplifier branch output matching network, TL POMN4 The other end is open. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Various other advantages and benefits will become apparent to those skilled in the art by reading the detailed description of the preferred embodiments below. The accompanying drawings are only for the purpose of illustrating the preferred embodiments and are not to be considered as limiting the present invention;

[0022] Figure 1 It is a structural schematic diagram of a gallium nitride millimeter wave linear power amplifier based on a pre-distortion circuit of the present invention;

[0023] Figure 2 This is a Vds-Pout, PAE relationship diagram of a gallium nitride millimeter wave linear power amplifier based on a pre-distortion circuit of the present invention;

[0024] Figure 3 A schematic diagram of the structure of a predistorter of a gallium nitride millimeter wave linear power amplifier based on a predistortion circuit of the present invention;

[0025] Figure 4 It is a schematic diagram of the network structure of a power divider based on a gallium nitride millimeter wave linear power amplifier with a predistortion circuit according to the present invention;

[0026] Figure 5 It is a schematic diagram of the network structure of a carrier amplifier branch input matching network of a gallium nitride millimeter wave linear power amplifier based on a predistortion circuit of the present invention;

[0027] Figure 6 It is a schematic diagram of the network structure of a peak amplifier branch stabilization network of a gallium nitride millimeter wave linear power amplifier based on a predistortion circuit of the present invention;

[0028] Figure 7 The present invention is a schematic diagram of the network structure of a carrier amplifier branch output matching network of a gallium nitride millimeter wave linear power amplifier based on a predistortion circuit. DETAILED DESCRIPTION

[0029] In order to make the purpose, technical solution and advantages of the present invention more clearly understood, the present invention is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not intended to limit the present invention.

[0030] Those skilled in the art will appreciate that, unless otherwise stated, the singular forms "a", "an" and "the" used herein may also include plural forms. It should be further understood that the term "comprising" used in the specification of the present invention refers to the presence of the features, integers, steps, operations, elements and / or components, but does not exclude the presence or addition of one or more other features, integers, steps, operations, elements, components and / or groups thereof.

[0031] The present invention will be described in detail below in conjunction with the accompanying drawings.

[0032] Example 1

[0033] like Figure 1 and Figure 2 As shown, a gallium nitride millimeter wave linear power amplifier based on an analog predistorter is a power amplifier of an improved Doherty structure, comprising an input end, an analog predistorter, a power divider, a carrier amplifier branch, and a peak amplifier branch; the input end, the analog predistorter, and the power divider are connected in series, the carrier amplifier branch and the peak amplifier branch are connected in parallel, and then connected in series with the power divider;

[0034] The carrier amplifier branch includes a carrier amplifier branch input matching network, a carrier amplifier branch stabilizing network, a carrier amplifier, a carrier amplifier branch output matching network, a first capacitor C1, a first microstrip line TL1 and a second capacitor C2;

[0035] The peak amplifier branch includes a peak amplifier branch input matching network, a peak amplifier branch stabilizing network, a first peak amplifier, and a second peak amplifier. The first peak amplifier and the second peak amplifier are connected in parallel, which can effectively increase the output power.

[0036] The carrier amplifier branch and the peak amplifier branch are connected in parallel and then connected in series with the second microstrip line TL2. The second microstrip line and the output end are connected in series. Between the second microstrip line and the output end, a third capacitor C3 and a resistor R are connected in parallel with the ground.

[0037] The carrier amplifier is biased in class AB and the peak amplifier is biased in class C. When the input power is low, only the carrier amplifier works and both peak amplifiers are turned off. As the input increases, the carrier amplifier reaches its maximum output voltage and the first efficiency peak appears. At the same time, at the efficiency peak, the two peak amplifiers work simultaneously, and the load value of the carrier amplifier is adjusted by injecting current at the common node. Therefore, the output voltage and efficiency of the carrier amplifier can be maintained at the maximum value, while the output current and output power increase. Since there are two peak amplifiers working at the same time, the output power is greater than that of a single peak amplifier in the existing Doherty structure.

[0038] At lower frequencies, the power amplifier gain and added power efficiency of this improved Doherty structure are significantly increased. Due to the large available gain, the effect of high output power and high added power efficiency is achieved. In the output power vs. drain voltage graph at 30GHz, as Vds increases, the output power also increases, and the added power efficiency also increases with Vds. The increase in power efficiency is due to higher amplifier gain and circuit matching at high drain voltages.

[0039] Example 2

[0040] like Figure 3 As shown, a predistorter based on a gallium nitride millimeter wave linear power amplifier predistortion circuit includes a first Schottky diode SD1, a first capacitor C1, a first microstrip line TL1, a second microstrip line TL2, a second capacitor C2, and a second Schottky diode SD2 connected in series in a main loop between the input end and the output end; a series loop consisting of a DC power supply VCC1 and a first radio frequency choke coil RFC1 is connected in parallel between the input end and the first Schottky diode SD1; a capacitor C1 is connected in parallel at both ends of the first Schottky diode SD1 p1 A second RF choke coil RFC2 is connected in parallel between the first capacitor C1 and the first microstrip line TL1; a branch consisting of a reactor L1, a DC power supply VCC3, a third RF choke coil RFC3, and a varactor diode V1 is connected in parallel between the first microstrip line TL1 and the second microstrip line TL2. The DC power supply VCC3 is connected in series with the third RF choke coil RFC3 and in parallel with the varactor diode V1, and then connected in series with one end of the reactor L1. The other end of the reactor L1 is connected between the first microstrip line TL1 and the second microstrip line TL2; a capacitor C is connected in parallel at both ends of the second Schottky diode SD2 p2 A series loop consisting of a DC power supply VCC3 and a third RF choke coil RFC3 is connected in parallel between the output end and the second Schottky diode SD2.

[0041] The relationship between the phase constant β and the propagation constant γ of the first microstrip line TL1 and the second microstrip line TL2 is:

[0042] γ=jβ

[0043]

[0044]

[0045] Wherein, d is the unit length of the microstrip line; L1 and C1 are the equivalent reactance and equivalent capacitance of the first microstrip line TL1; L2 and C2 are the equivalent reactance and equivalent capacitance of the second microstrip line TL2.

[0046] The series resonant frequency is

[0047]

[0048] The parallel resonant frequency is

[0049]

[0050] L1 and C1 are the equivalent reactance and equivalent capacitance of the first microstrip line TL1; L2 and C2 are the equivalent reactance and equivalent capacitance of the second microstrip line TL2.

[0051] Example 3

[0052] like Figure 4 As shown, a power divider based on a pre-distortion circuit gallium nitride millimeter wave linear power amplifier. The power divider consists of a reactor L w1 , L w2 , L w3 , L w4 , capacitor C w1 , C w2 , C w3 , C w4 , resistor R w composition.

[0053] Four reactors L w1 , L w2 , L w3 , L w4 Connected in a ring, the input end of the power divider is connected to L w1 , L w4 The carrier amplifier branch is connected to the reactor L w1 , L w2 The peak amplifier branch is connected to the reactor L w2 , L w3 Between, the resistor R w One end is connected to the reactor L w3 , L w4 The other end is grounded.

[0054] Capacitor C w1 One end is connected to the input end of the power divider, the reactor L w1 、Reactor L w4 The other end of the capacitor is grounded; w2 One end is connected to the carrier amplifier branch, the reactor L w1 、Reactor L w2 The other end of the capacitor is grounded; w3 One end is connected to the peak amplifier branch, the reactor L w2 、Reactor L w3 The other end of the capacitor is grounded; w4 One end is connected to the resistor R w 、Reactor L w3 、Reactor L w4 connection point and the other end is grounded.

[0055] Example 4

[0056] like Figure 5 As shown, a carrier amplifier branch input matching network of a gallium nitride millimeter wave linear power amplifier based on a predistortion circuit, the input matching network is composed of a microstrip line TL CIMN1 TL CIMN2 TL CIMN3 The carrier amplifier branch input matching network is connected in series with a microstrip line TL between the input and output ends. CIMN1 TL CIMN2 , the TL CIMN3 One end is connected to the microstrip line TL CIMN1 TL CIMN2 The other end is connected to the DC power supply VCC CIMN .

[0057] Example 5

[0058] like Figure 6 As shown, a peak amplifier branch stabilization network of a gallium nitride millimeter wave linear power amplifier based on a predistortion circuit is composed of a capacitor C PSN , resistor R PSN and microstrip line TL PSN Composition, the capacitor C PSN and resistor R PSN After parallel connection, one end is connected to the input end of the peak amplifier branch stabilization network, and the other end is connected to the microstrip line TL PSN connection, the microstrip line TL PSN The other end is connected to the output end of the peak amplifier branch stabilization network.

[0059] Example 6

[0060] like Figure 7 As shown, a carrier amplifier branch output matching network of a gallium nitride millimeter wave linear power amplifier based on a predistortion circuit, the output matching network is composed of a microstrip line TL COMN1 TL COMN2 TL COMN3 TL COMN4 and capacitor C COMN The microstrip line TL COMN1 TL COMN2 TL COMN3 TL COMN4 One end is connected in star shape, TL COMN1 The other end is connected to the input of the carrier amplifier branch output matching network, TL COMN2 The other end is connected to the DC power supply VCC COMN Connect, TL COMN3 The other end is connected in series with capacitor C COMN Then connect the output of the carrier amplifier branch output matching network, TL COMN4 The other end is open.

[0061] The reflection coefficient of the output matching network is Γ M for:

[0062]

[0063] Among them, S 11 , S 12 , S 21 and S 22 is the S parameter when the output matching network is regarded as a two-port network; the load reflection coefficient Γ M1 for:

[0064]

[0065] Among them, Z M1 is the load impedance, R opt is the optimal resistance when both drain current and voltage are maximized,

[0066] Z M1 =R opt (2-θ)

[0067] θ is the current ratio of the peak amplifier to the carrier amplifier:

[0068]

[0069] Among them, I P is the peak amplifier current, I C is the current of the carrier amplifier.

[0070] In summary, the present invention proposes a gallium nitride millimeter-wave linear power amplifier based on a predistortion circuit, which utilizes the analog predistorter signal amplitude that expands with input power and the signal phase that compresses with input power, to correct the GaN power amplifier output signal amplitude that compresses with input power and the signal phase that expands with input power to achieve the linear design of the power amplifier; the improved Doherty structure power amplifier can enable the amplifier to maintain high efficiency within a certain range of peak power back-off. The analog predistorter is combined with the Doherty structure amplifier to amplify high peak-to-average ratio signals and can achieve high efficiency and high linearity. The power amplifier as a whole has the characteristics of high frequency, high power, and high efficiency, and is suitable for amplifying high peak-to-average ratio signals. It can be widely used in satellite communications, weather radars, drones, security and other fields.

Claims

1. A gallium nitride millimeter wave linear power amplifier based on an analog predistorter, characterized in that: It includes an input end, an analog predistorter, a power divider, a carrier amplifier branch, and a peak amplifier branch; the input end, the analog predistorter, and the power divider are connected in series, the carrier amplifier branch and the peak amplifier branch are connected in parallel, and then connected in series with the power divider; The carrier amplifier branch includes a carrier amplifier branch input matching network, a carrier amplifier branch stabilizing network, a carrier amplifier, a carrier amplifier branch output matching network, a first capacitor, a first microstrip line, and a second capacitor; The peak amplifier branch includes a peak amplifier branch input matching network, a peak amplifier branch stabilizing network, a first peak amplifier, and a second peak amplifier; The carrier amplifier branch and the peak amplifier branch are connected in parallel and then connected in series with the second microstrip line. The second microstrip line and the output end are connected in series. Between the second microstrip line and the output end, a third capacitor and a resistor are connected in parallel with the ground.

2. The gallium nitride millimeter wave linear power amplifier based on analog predistorter according to claim 1, characterized in that: The wave amplifier and the peak amplifier are both GaN HEMTs.

3. The gallium nitride millimeter wave linear power amplifier based on analog predistorter according to claim 1, characterized in that: The predistorter comprises a first Schottky diode SD1, a first capacitor C1, a first microstrip line TL1, a second microstrip line TL2, a second capacitor C2, and a second Schottky diode SD2 connected in series in a main loop between the input end and the output end; a series loop consisting of a DC power supply VCC1 and a first radio frequency choke coil RFC1 is connected in parallel between the input end and the first Schottky diode SD1; a capacitor C1 is connected in parallel at both ends of the first Schottky diode SD1 p1 ; A fourth RF choke coil RFC4 is connected in parallel between the first capacitor C1 and the first microstrip line TL1; a branch consisting of a reactor L1, a DC power supply VCC3, a third RF choke coil RFC3, and a varactor diode V1 is connected in parallel between the first microstrip line TL1 and the second microstrip line TL2, the DC power supply VCC3 and the third RF choke coil RFC3 are connected in series and then connected to one end of the reactor L1, the varactor diode V1 is connected in parallel to the branch consisting of the DC power supply VCC3 and the third RF choke coil RFC3, and the other end of the reactor L1 is connected between the first microstrip line TL1 and the second microstrip line TL2; a capacitor C is connected in parallel at both ends of the second Schottky diode SD2 p2 A series circuit consisting of a DC power supply VCC2 and a third RF choke coil RFC2 is connected in parallel between the second capacitor C2 and the second Schottky diode SD2; a fifth RF choke coil RFC5 is connected in parallel between the output end and the second Schottky diode SD2.

4. The gallium nitride millimeter wave linear power amplifier based on analog predistorter according to claim 1, characterized in that: The power divider consists of a reactor L w1 , L w2 , L w3 , L w4 , capacitor C w1 , C w2 , C w3 , C w4 , resistor R w composition; The reactor L w1 , L w2 , L w3 , L w4 Connected into a ring, the input end of the power divider is connected to the reactor L w1 , L w4 The carrier amplifier branch is connected to the reactor L w1 , L w2 The peak amplifier branch is connected to the reactor L w2 , L w3 Between, the resistor R w One end is connected to the reactor L w3 , L w4 The other end is grounded; The capacitor C w1 One end is connected to the input end of the power divider, the reactor L w1 、Reactor L w4 The other end of the capacitor C is grounded. w2 One end is connected to the carrier amplifier branch, the reactor L w1 、Reactor L w2 The other end of the capacitor C is grounded. w3 One end is connected to the peak amplifier branch, the reactor L w2 、Reactor L w3 The other end of the capacitor C is grounded. w4 One end is connected to the resistor R w 、Reactor L w3 、Reactor L w4 connection point and the other end is grounded.

5. The gallium nitride millimeter wave linear power amplifier based on analog predistorter according to claim 1, characterized in that: The carrier amplifier branch input matching network consists of a microstrip line TL CIMN1 TL CIMN2 TL CIMN3 The carrier amplifier branch input matching network is connected in series with a microstrip line TL between the input and output ends. CIMN1 TL CIMN2 , the TL CIMN3 One end is connected to the microstrip line TL CIMN1 TL CIMN2 The other end is connected to the DC power supply VCC CIMN ; The peak amplifier branch input matching network consists of a microstrip line TL PIMN1 TL PIMN2 TL PIMN3 The peak amplifier branch input matching network is connected in series with a microstrip line TL between the input and output ends. PIMN1 TL PIMN2 , the TL PIMN3 One end is connected to the microstrip line TL PIMN1 TL PIMN2 The other end is connected to the DC power supply VCC PIMN .

6. The gallium nitride millimeter wave linear power amplifier based on analog predistorter according to claim 1, characterized in that: The carrier amplifier branch stabilization network consists of capacitor C CSN , resistor R CSN and microstrip line TL CSN Composition, the capacitor C CSN and resistor R CSN After parallel connection, one end is connected to the input end of the carrier amplifier branch stabilization network, and the other end is connected to the microstrip line TL CSN connection, the microstrip line TL CSN The other end is connected to the output end of the carrier amplifier branch stabilization network; The peak amplifier branch stabilization network consists of capacitor C PSN , resistor R PSN and microstrip line TL PSN Composition, the capacitor C PSN and resistor R PSN After parallel connection, one end is connected to the input end of the peak amplifier branch stabilization network, and the other end is connected to the microstrip line TL PSN connection, the microstrip line TL PSN The other end is connected to the output end of the peak amplifier branch stabilization network.

7. The gallium nitride millimeter wave linear power amplifier based on analog predistorter according to claim 1, characterized in that: The carrier amplifier branch output matching network consists of a microstrip line TL COMN1 TL COMN2 TL COMN3 TL COMN4 and capacitor C COMN The microstrip line TL COMN1 TL COMN2 TL COMN3 TL COMN4 One end is connected in star shape, TL COMN1 The other end is connected to the input of the carrier amplifier branch output matching network, TL COMN2 The other end is connected to the DC power supply VCC COMN Connect, TL COMN3 The other end of the series capacitor C COMN Then connect the output of the carrier amplifier branch output matching network, TL COMN4 The other end is open; The peak amplifier branch output matching network consists of a microstrip line TL POMN1 TL POMN2 TL POMN3 TL POMN4 and capacitor C POMN The microstrip line TL POMN1 TL POMN2 TL POMN3 TL POMN4 One end is connected in star shape, TL POMN1 The other end is connected to the input of the peak amplifier branch output matching network, TL POMN2 The other end is connected to the DC power supply VCC POMN Connect, TL POMN3 The other end of the series capacitor C POMN Then connect the output of the peak amplifier branch output matching network, TL POMN4 The other end is open.

Images