Manufacturing method of Micro-LED substrate with heat dissipation channel

Abstract

The invention relates to a manufacturing method of a Micro-LED substrate with a heat dissipation channel, which belongs to the technical field of semiconductor display, and comprises the following steps of: etching a heat dissipation through hole in a display area of an array substrate, evaporating a first heat conduction material in the heat dissipation through hole, and evaporating a metal layer on the array substrate to serve as a driving circuit and an electrode bonding pad. The array chip is attached to a corresponding electrode bonding pad on the array substrate, the adhesive metal layer is solidified through the bonding technology, the periphery of the array substrate and the periphery of the array chip after bonding are sealed, the space between the array chip and the substrate is filled with a second heat conduction material in a first or successive mode, and the array chip and the substrate are sealed through a second heat conduction material. Therefore, the heat dissipation channels are formed in the array in the display substrate, and the heat conduction efficiency is improved.

Description

Technical Field

[0001] The present invention belongs to the field of semiconductor display technology, and in particular relates to a method for manufacturing a Micro-LED substrate with a heat dissipation channel. Background Art

[0002] Micro-LED display array is a display technology based on tiny light-emitting diode (LED) units. It realizes self-luminous display by densely arranging micron-level LED pixels into an array. Compared with traditional LCD and OLED display technologies, Micro-LED display array has the advantages of higher brightness, lower power consumption, fast response speed, high contrast and long life. Therefore, it has broad application prospects in high-definition display, wearable devices and vehicle-mounted display.

[0003] However, Micro-LEDs generate a lot of heat when operating at high brightness, especially in high-density display panels. Due to uneven current distribution, heat is difficult to dissipate efficiently. Local high temperature accumulation not only increases energy consumption, but also affects the service life and brightness stability of the device.

[0004] The existing Micro-LED array structure has deficiencies in the design of the heat dissipation path, making it difficult to effectively remove heat from the high-temperature area, resulting in heat accumulation in the area between LED pixels. In summary, this solution was created. Summary of the invention

[0005] In view of the shortcomings of the prior art, the technical problem to be solved by the present invention is to provide a method for manufacturing a Micro-LED substrate with a heat dissipation channel. The Micro-LED display panel produced by the present invention improves the heat conduction efficiency of the Micro-LED display panel by arranging the heat dissipation channel in the Micro-LED array substrate.

[0006] In order to solve the above technical problems, the technical solution adopted by the present invention is: a method for manufacturing a Micro-LED substrate with a heat dissipation channel, comprising the following steps:

[0007] S1. Etching heat dissipation holes in the display area of ​​the array substrate, where the heat dissipation holes are located between Micro-LED pixels on the display area of ​​the array substrate;

[0008] S2, evaporating a first thermally conductive material into the heat dissipation through hole;

[0009] S3, evaporating a metal layer on the array substrate as a driving circuit and an electrode pad;

[0010] S4, evaporating a heat-conducting metal layer on the array chip as a second heat-conducting material;

[0011] S5, evaporating or coating an adhesive metal layer with bonding function on the electrodes of the array chip, attaching the array chip to the corresponding electrode pads on the array substrate, and curing the adhesive metal layer through a bonding process;

[0012] S6, filling and sealing the periphery of the bonded array chip and the array substrate.

[0013] A method for manufacturing a Micro-LED substrate having a heat dissipation channel comprises the following steps:

[0014] S1. Etching heat dissipation through holes in the display area of ​​the array substrate, where the heat dissipation through holes are located between Micro-LED pixels on the display area of ​​the array substrate;

[0015] S2, evaporating a first thermally conductive material into the heat dissipation through hole;

[0016] S3, evaporating a metal layer on the array substrate as a driving circuit and an electrode pad;

[0017] S4, evaporating or coating an adhesive metal layer having a bonding effect on the electrodes of the array chip;

[0018] S5, bonding the array chip to the corresponding electrode pads on the array substrate, and curing the adhesive metal layer through a bonding process;

[0019] S6, filling and sealing the periphery of the bonded array chip and the array substrate and leaving a gap;

[0020] S7, filling the second heat-conducting material between the array chip and the array substrate from the notch;

[0021] S8. Fill the gap and seal it.

[0022] Furthermore, the first thermally conductive material is a solid thermally conductive material with stable physical and chemical properties and high hardness.

[0023] Furthermore, the first thermally conductive material is selected from silicon carbide, aluminum nitride or diamond.

[0024] Furthermore, the material of the evaporated metal layer in step S3 is any one or more of platinum, chromium, titanium, aluminum, nickel and gold.

[0025] Furthermore, the specific steps in step S1 are as follows: select an array substrate and heat it in a water bath in a photoresist stripping solution at a temperature of 60°C-90°C for 3 minutes-15 minutes to clean and deoxidize the surface of the array substrate; then use dry etching in the display area of ​​the array substrate to accurately etch heat dissipation holes, and the heat dissipation holes are located between Micro-LED pixels.

[0026] Furthermore, the specific steps of step S2 are as follows: a layer of a first thermally conductive material with high thermal conductivity is evaporated in the etched through hole using a physical vapor deposition method, magnetron sputtering or chemical vapor deposition.

[0027] Furthermore, the specific steps of step S3 are as follows: a metal layer is evaporated on the array substrate as a driving circuit and an electrode pad, and an N-type electrode alignment pad and a P-type electrode alignment pad are formed by a patterning process.

[0028] Furthermore, the bonding process in step S5 to solidify the adhesive metal layer is specifically performed as follows: using a bonding device to align the N-type electrode alignment pad and the P-type electrode alignment pad on the array chip with the N-type electrode alignment pad and the P-type electrode alignment pad on the array substrate, respectively, by a thermal compression bonding process at a temperature of 150° C. to 400° C. and for 10 3 N-5*10 3 The adhesive metal layer is cured under N pressure to form an electrical connection.

[0029] Furthermore, the specific steps of step S7 are as follows: fill the second thermal conductive material between the array chip and the array substrate by microfluidic technology or injection equipment.

[0030] Compared with the prior art, the present invention has the following beneficial effects:

[0031] 1. The present invention provides a Micro-LED display panel produced by a manufacturing method of a Micro-LED substrate with a heat dissipation channel. The Micro-LED display panel improves the efficiency of heat conduction by arranging a heat dissipation channel in a Micro-LED array substrate; a first heat-conducting material is filled in the heat dissipation through-holes of the array substrate, and a second heat-conducting material is filled between the array substrate and the array chip. The heat dissipation channel in the Micro-LED display panel is formed by the cooperation of the first heat-conducting material and the second heat-conducting material, which effectively alleviates the problem of heat accumulation in high-heat areas in the Micro-LED display panel, thereby reducing the device temperature and improving the brightness stability and service life of the Micro-LED display panel.

[0032] 2. The first thermally conductive material is a solid thermally conductive material with stable physical and chemical properties and high hardness, such as silicon carbide, aluminum nitride or diamond, in order to avoid leakage of the second thermally conductive material due to material problems of the first thermally conductive material itself during use or manufacturing.

[0033] 3. The purpose of evaporating or coating a sticky metal layer with bonding function on the electrode of the array chip is to enhance the adhesion and conductivity between the electrode and the array substrate. BRIEF DESCRIPTION OF THE DRAWINGS

[0034] Figure 1 A quarter cross-sectional view of the array chip of the present invention;

[0035] Figure 2 is a front view structural schematic diagram of the array substrate in the present invention;

[0036] Figure 3 A quarter cross-sectional view of the array substrate after etching in the present invention;

[0037] Figure 4 A quarter cross-sectional view of the array substrate after being filled with the first heat-conducting material in the present invention;

[0038] Figure 5 This is a quarter cross-sectional view of the array substrate after four layers of metal are evaporated in the present invention;

[0039] Figure 6 This is a quarter-section diagram of the array substrate and array chip after bonding in the present invention;

[0040] Figure 7 This is a quarter-section view of the array substrate and array chip after glue coating in Example 2 of the present invention;

[0041] Figure 8 This is a quarter-section view of the array substrate and array chip after the second heat-conducting material is filled in Example 2 of the present invention;

[0042] Fig. 9 is a schematic diagram of a top view structure of a display panel in the present invention;

[0043] Fig.10 This is a quarter-section view of the array substrate and array chip after bonding in Example 1 of the present invention.

[0044] Markings in the figure: 100, substrate; 101, N-pole gallium nitride layer; 102, passivation layer; 103, multi-quantum well layer; 104, P-pole gallium nitride layer; 105, P-type electrode layer; 106, N-type electrode layer; 200, array substrate; 201, N-type electrode alignment pad; 202, first thermal conductive material; 203, P-type electrode alignment pad; 301, adhesive metal layer; 302, UV glue; 303, second thermal conductive material; 400, display substrate; 401, pixel point; 402, N-type electrode bonding point; 403, P-type electrode bonding point; 404, heat dissipation through hole; 405, sealing area. DETAILED DESCRIPTION

[0045] In order to make the above features and advantages of the present invention more obvious and easy to understand, embodiments are given below with reference to the accompanying drawings for detailed description as follows.

[0046] like Fig. 9As shown, the display substrate 400 in the present application is composed of an array substrate 200 and an array chip, wherein the surface of the display substrate 400 has pixel points 401, N-type electrode bonding points 402, P-type electrode bonding points 403, heat dissipation through holes 404 and a sealing area 405, wherein the sealing area 405 is the largest matrix dotted area in the figure, and the matrix dotted area in the upper left corner is a quarter structure after the array substrate 200 and the array chip are formed. The array chip is as shown in FIG. Figure 1 As shown, the array substrate 200 is composed of a substrate 100, an N-pole gallium nitride layer 101, a passivation layer 102, a multi-quantum well layer 103, a P-pole gallium nitride layer 104, an ITO layer or a P-type electrode layer 105 and an N-type electrode layer 106, wherein the ITO layer can be selected according to actual conditions. Figure 2 shown.

[0047] Example 1

[0048] like Figure 1-Figure 6 , Fig. 9 and Fig.10 As shown, this embodiment provides a method for manufacturing a Micro-LED substrate with a heat dissipation channel, comprising the following steps:

[0049] S1. Etching heat dissipation through holes 404 in the display area of ​​the array substrate 200, where the heat dissipation through holes 404 are located between Micro-LED pixels on the display area of ​​the array substrate 200;

[0050] S2, evaporating the first thermal conductive material 202 into the heat dissipation through hole 404;

[0051] S3, evaporating a metal layer on the array substrate 200 as a driving circuit and an electrode pad;

[0052] S4, evaporating a heat-conducting metal layer on the array chip as the second heat-conducting material 303;

[0053] S5, evaporating or coating an adhesive metal layer 301 having a bonding function on the electrodes of the array chip, attaching the array chip to the corresponding electrode pads on the array substrate 200, and curing the adhesive metal layer 301 through a bonding process;

[0054] S6 , filling and sealing the periphery of the bonded array chip and the array substrate 200 with UV glue 302 , and then curing the UV glue 302 .

[0055] The specific process of the above steps is as follows:

[0056] In step S1, the substrate is first selected and prepared: an array substrate 200 is selected (the material of the array substrate 200 is silicon, silicon carbide, aluminum oxide, aluminum nitride, copper, other metal substrates or metal ceramic substrates). In this embodiment, the material of the array substrate 200 is silicon; then the array substrate 200 is selected and heated in a water bath in a photoresist stripping solution at a temperature of 60° C. to 90° C. for 3 minutes to 15 minutes to clean and deoxidize the surface of the array substrate 200. The photoresist stripping solution can be an acetone solution, an AZ400T stripping solution or other solution that will not damage the array substrate 200; then dry etching is used in the display area of ​​the array substrate 200 to accurately etch out the heat dissipation through hole 404, and the heat dissipation through hole 404 is located between the Micro-LED pixels, such as Figure 3 As shown, when the heat dissipation through hole 404 is provided, it is necessary to ensure that the shape and size of the heat dissipation through hole 404 will not cause an open circuit of the Micro-LED pixel.

[0057] In step S2, a layer of the first thermally conductive material 202 having high thermal conductivity is deposited in the etched heat dissipation through hole 404 by using a physical vapor deposition (PVD) method, a magnetron sputtering method or a chemical vapor deposition (CVD) method, such as Figure 4 The first heat-conducting material 202 is a solid heat-conducting material with stable physical and chemical properties and high hardness, such as silicon carbide, aluminum nitride or diamond. The reason for this is to avoid leakage of the second heat-conducting material 303 due to material problems of the first heat-conducting material 202 itself during use or manufacturing.

[0058] In step S3, metal layers are sequentially deposited on the substrate as driving circuits and electrode pads. The metal layers can be any one or more of platinum, chromium, titanium, aluminum, nickel and gold. The following provides a combination of 1-6 metal layers: a one-layer structure: the metal layer is gold, and the metal thickness is 100nm; a double-layer structure, the metal layers are nickel and gold, and the metal thicknesses are 30nm and 50nm respectively; a three-layer structure, the metal layers are chromium, platinum and gold, and the metal thicknesses are 10nm, 50nm and 50nm respectively; a four-layer structure, the metal layers are titanium, aluminum, titanium and gold, and the metal thicknesses are as follows: The thickness of the metal layers is 20nm, 100nm, 20nm and 300nm respectively; the five-layer structure, the metal layers are nickel, chromium, aluminum, titanium and gold, and the metal thicknesses are 100nm, 30nm, 30nm, 30nm and 100nm respectively; the six-layer structure, the metal layers are nickel, titanium, aluminum, chromium, platinum and gold, and the metal thicknesses are 100nm, 30nm, 30nm, 30nm, 30nm and 100nm respectively; then, an N-type electrode alignment pad 201 and a P-type electrode alignment pad 203 are formed by a patterning process (such as photolithography + etching or laser direct writing), such as Figure 5The N-type electrode alignment pad 201 and the P-type electrode alignment pad 203 on the substrate will be used for bonding connection with the array chip later.

[0059] In step S4, a second thermally conductive material 303 with high thermal conductivity is deposited on the array chip using a physical vapor deposition (PVD) method, a magnetron sputtering method, or a chemical vapor deposition (CVD) method. The second thermally conductive material 303 is a solid thermally conductive material with stable physical and chemical properties and high hardness, such as silicon carbide, aluminum nitride, or diamond. The reason for such a setting is to avoid affecting the mechanical strength and heat dissipation performance of the display array substrate due to the material problem of the second thermally conductive material 303 itself during use or manufacturing.

[0060] In step S5, firstly, an adhesive metal layer 301 is evaporated or coated on the N-type electrode and the P-type electrode of the array chip. The adhesive metal layer 301 is selected from a chromium composite layer or a gold composite layer to enhance the adhesion and conductivity between the electrode and the substrate. Then, a bonding device is used to align the N-type electrode alignment pad 201 and the P-type electrode alignment pad 203 on the array chip with the N-type electrode alignment pad 201 and the P-type electrode alignment pad 203 on the array substrate 200, respectively. The bonding is performed by a thermal compression bonding process at a temperature of 150° C. to 400° C. and 10 3 N-5*10 3 N pressure conditions to solidify the adhesive metal layer 301 to form an electrical connection, such as Figure 6 shown.

[0061] In step S6, UV glue 302 is applied to the periphery of the bonded array substrate 200 and array chip to protect and seal the above structure. UV glue 302 is cured by ultraviolet light to ensure that it has good sealing and insulation properties and forms a complete heat dissipation channel structure. Through this heat dissipation channel, the heat generated by the chip can be effectively transferred to the outside of the array substrate 200. Fig.10 As shown, the arrow direction indicates the heat dissipation channel and direction.

[0062] The colloid used to seal the periphery of the array substrate 200 and the array chip in step S6 may also be made of other materials, such as epoxy resin, polyurethane glue, acrylate glue or hot melt glue.

[0063] Preferably, step S7 encapsulates the final display substrate 400 structure by adding a layer of transparent glass cover or protective film to enhance the mechanical strength and protect the array substrate 200 and the array chip from the external environment.

[0064] Preferably, when the second heat-conducting material 303 and the first heat-conducting material 202 in this embodiment are made of the same material, the manufacturing efficiency of the display substrate 400 in this embodiment can be improved, and the manufactured display substrate 400 is more energy-efficient.

[0065] Example 2

[0066] like Figure 1-Figure 9 As shown, this embodiment provides a method for manufacturing a Micro-LED substrate with a heat dissipation channel, comprising the following steps:

[0067] S1. Etching heat dissipation through holes 404 in the display area of ​​the array substrate 200, where the heat dissipation through holes 404 are located between Micro-LED pixels on the display area of ​​the array substrate 200;

[0068] S2, evaporating the first thermal conductive material 202 into the heat dissipation through hole 404;

[0069] S3, evaporating a metal layer on the array substrate 200 as a driving circuit and an electrode pad;

[0070] S4, evaporating or coating an adhesive metal layer 301 having a bonding effect on the electrodes of the array chip;

[0071] S5, bonding the array chip to the corresponding electrode pads on the array substrate 200, and curing the adhesive metal layer 301 through a bonding process;

[0072] S6, filling and sealing the periphery of the bonded array chip and the array substrate 200 and leaving a gap;

[0073] S7, filling the second heat conducting material 303 between the array chip and the array substrate 200 from the notch;

[0074] S8. Fill the gap and seal it.

[0075] The specific process of the above steps is as follows:

[0076] In step S1, the substrate is first selected and prepared: an array substrate 200 is selected (the material of the array substrate 200 is such as silicon, silicon carbide, aluminum oxide, aluminum nitride, copper, other metal substrates or metal ceramic substrates). In this embodiment, the material of the array substrate 200 is silicon; then the array substrate 200 is selected and heated in a photoresist stripping solution at a temperature of 60° C. to 90° C. in a water bath for 3 minutes to 15 minutes to clean and deoxidize the surface of the array substrate 200. The photoresist stripping solution can be an acetone solution, an AZ400T stripping solution or other solution that will not damage the array substrate 200; then dry etching is used in the display area of ​​the array substrate 200 to accurately etch out the heat dissipation through hole 404, and the heat dissipation through hole 404 is located between the Micro-LED pixels, such as Figure 3 As shown, when the heat dissipation through hole 404 is provided, it is necessary to ensure that the shape and size of the heat dissipation through hole 404 will not cause an open circuit of the Micro-LED pixel.

[0077] In step S2, a layer of the first thermally conductive material 202 with high thermal conductivity is deposited in the etched heat dissipation through hole 404 by using a physical vapor deposition (PVD) method, magnetron sputtering or chemical vapor deposition (CVD) method, such as Figure 4 The first heat-conducting material 202 is a solid heat-conducting material with stable physical and chemical properties and high hardness, such as silicon carbide, aluminum nitride or diamond. The reason for this is to avoid affecting the mechanical strength and heat dissipation performance of the display array substrate due to the material problems of the second heat-conducting material 303 itself during use or manufacturing.

[0078] In step S3, metal layers are sequentially deposited on the substrate as driving circuits and electrode pads. The metal layers can be any one or more of platinum, chromium, titanium, aluminum, nickel and gold. The following provides a combination of 1-6 metal layers: a one-layer structure: the metal layer is gold, and the metal thickness is 100nm; a double-layer structure, the metal layers are nickel and gold, and the metal thicknesses are 30nm and 50nm respectively; a three-layer structure, the metal layers are chromium, platinum and gold, and the metal thicknesses are 10nm, 50nm and 50nm respectively; a four-layer structure, the metal layers are titanium, aluminum, titanium and gold, and the metal thicknesses are as follows: The thickness of the metal layers is 20nm, 100nm, 20nm and 300nm respectively; the five-layer structure, the metal layers are nickel, chromium, aluminum, titanium and gold, and the metal thicknesses are 100nm, 30nm, 30nm, 30nm and 100nm respectively; the six-layer structure, the metal layers are nickel, titanium, aluminum, chromium, platinum and gold, and the metal thicknesses are 100nm, 30nm, 30nm, 30nm, 30nm and 100nm respectively; then, an N-type electrode alignment pad 201 and a P-type electrode alignment pad 203 are formed by a patterning process (such as photolithography + etching or laser direct writing), such as Figure 5 The N-type electrode alignment pad 201 and the P-type electrode alignment pad 203 on the substrate will be used for bonding connection with the array chip later.

[0079] In steps S4 and S5, an adhesive metal layer 301 is firstly evaporated or coated on the N-type electrode and the P-type electrode of the array chip. The adhesive metal layer 301 is selected from a chromium composite layer or a gold composite layer to enhance the adhesion and conductivity between the electrode and the substrate. Then, a bonding device is used to align the N-type electrode alignment pad 201 and the P-type electrode alignment pad 203 on the array chip with the N-type electrode alignment pad 201 and the P-type electrode alignment pad 203 on the array substrate 200, respectively. The bonding is performed by a thermal compression bonding process at a temperature of 150° C. to 400° C. and 10 3 N-5*10 3 N pressure conditions to solidify the adhesive metal layer 301 to form an electrical connection, such as Figure 6 shown.

[0080] In step S6, UV glue 302 is applied to the periphery of the bonded array substrate 200 and the array chip, and a gap is left. In this solution, a gap is left on one side of the periphery of the array substrate 200 and the array chip. The purpose of applying UV glue 302 is to protect and seal the above structure. UV glue 302 is cured by ultraviolet light irradiation, such as Figure 7 shown.

[0081] In step S7, the second thermally conductive material 303 with high thermal conductivity and insulation is filled into the gap between the array chip and the array substrate 200 by microfluidics technology or injection equipment, and the heat dissipation layer is ensured to be uniform and free of bubbles. The second thermally conductive material 303 is selected from liquid phase change material or thermal conductive silicone grease.

[0082] After the second heat-conducting material 303 is filled in step S8, the gap is sealed with UV glue 302 and finally cured by ultraviolet light to form a complete heat dissipation channel structure. Figure 8-Figure 9 As shown, Figure 8 The arrows in the figure indicate the heat dissipation channel. The heat generated by the chip can be effectively transferred to the outside of the substrate through this heat dissipation channel.

[0083] The colloid used to seal the periphery of the array substrate 200 and the array chip in step S6 and step S8 may also be made of other materials, such as epoxy resin, polyurethane glue, acrylate glue or hot melt glue.

[0084] Preferably, step S9 is to encapsulate the final display substrate 400 structure by adding a layer of transparent glass cover or protective film to enhance the mechanical strength and protect the array substrate 200 and the array chip from the external environment.

[0085] The above shows and describes the basic principles and main features of the present invention and the advantages of the present invention. Those skilled in the art should understand that the present invention is not limited to the above embodiments. The above embodiments and descriptions are only for illustrating the principles of the present invention. Without departing from the spirit and scope of the present invention, the present invention may have various changes and improvements, which shall fall within the scope of the present invention to be protected. The scope of protection of the present invention is defined by the attached claims and their equivalents.

Claims

1. A method for manufacturing a Micro-LED substrate having a heat dissipation channel, characterized in that: The following steps are involved: S1. Etching heat dissipation through holes in the display area of ​​the array substrate, where the heat dissipation through holes are located between Micro-LED pixels on the display area of ​​the array substrate; S2, evaporating a first thermally conductive material into the heat dissipation through hole; S3, evaporating a metal layer on the array substrate as a driving circuit and an electrode pad; S4, evaporating a heat-conducting metal layer on the array chip as a second heat-conducting material; S5, evaporating or coating an adhesive metal layer with bonding function on the electrodes of the array chip, attaching the array chip to the corresponding electrode pads on the array substrate, and curing the adhesive metal layer through a bonding process; S6, filling and sealing the periphery of the bonded array chip and the array substrate.

2. A method for manufacturing a Micro-LED substrate having a heat dissipation channel, characterized in that: The following steps are involved: S1. Etching heat dissipation through holes in the display area of ​​the array substrate, where the heat dissipation through holes are located between Micro-LED pixels on the display area of ​​the array substrate; S2, evaporating a first thermally conductive material into the heat dissipation through hole; S3, evaporating a metal layer on the array substrate as a driving circuit and an electrode pad; S4, evaporating or coating an adhesive metal layer having a bonding effect on the electrodes of the array chip; S5, bonding the array chip to the corresponding electrode pads on the array substrate, and curing the adhesive metal layer through a bonding process; S6, filling and sealing the periphery of the bonded array chip and the array substrate and leaving a gap; S7, filling the second heat-conducting material between the array chip and the array substrate from the notch; S8. Fill the gap and seal it.

3. A method for manufacturing a Micro-LED substrate with a heat dissipation channel according to claim 1 or 2, characterized in that: The first thermally conductive material is a solid thermally conductive material with stable physical and chemical properties and high hardness.

4. The method for manufacturing a Micro-LED substrate with a heat dissipation channel according to claim 3, characterized in that: The first thermally conductive material is selected from silicon carbide, aluminum nitride or diamond.

5. The method for manufacturing a Micro-LED substrate with a heat dissipation channel according to claim 1 or 2, characterized in that: The material of the evaporated metal layer in step S3 is any one or more of platinum, chromium, titanium, aluminum, nickel and gold.

6. The method for manufacturing a Micro-LED substrate with a heat dissipation channel according to claim 1 or 2, characterized in that: The specific steps in step S1 are as follows: selecting an array substrate and heating it in a water bath in a photoresist stripping solution at a temperature of 60° C. to 90° C. for 3 minutes to 15 minutes to clean and deoxidize the surface of the array substrate; then using dry etching in the display area of ​​the array substrate to accurately etch heat dissipation holes, and the heat dissipation holes are located between Micro-LED pixels.

7. The method for manufacturing a Micro-LED substrate with a heat dissipation channel according to claim 1 or 2, characterized in that: The specific steps of step S2 are as follows: a layer of a first thermally conductive material with high thermal conductivity is evaporated in the etched through hole using a physical vapor deposition method, magnetron sputtering or chemical vapor deposition.

8. The method for manufacturing a Micro-LED substrate with a heat dissipation channel according to claim 1 or 2, characterized in that: The specific steps of step S3 are as follows: a metal layer is evaporated on the array substrate as a driving circuit and an electrode pad, and an N-type electrode alignment pad and a P-type electrode alignment pad are formed by a patterning process.

9. The method for manufacturing a Micro-LED substrate with a heat dissipation channel according to claim 1 or 2, characterized in that: The bonding process in step S5 to solidify the adhesive metal layer is specifically as follows: using a bonding device to align the N-type electrode alignment pad and the P-type electrode alignment pad on the array chip with the N-type electrode alignment pad and the P-type electrode alignment pad on the array substrate, respectively, by a thermal compression bonding process at a temperature of 150°C to 400°C and 10°C. 3 N-5*10 3 The adhesive metal layer is cured under N pressure to form an electrical connection.

10. The method for manufacturing a Micro-LED substrate with a heat dissipation channel according to claim 2, characterized in that: The specific steps of step S7 are as follows: fill the second thermal conductive material between the array chip and the array substrate by using microfluidic technology or injection equipment.

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