Miniature LED device preparation method, miniature LED device and display device

Abstract

The invention provides a miniature LED device preparation method, a miniature LED device and a display device. The method comprises the steps that a miniature LED chip is obtained, the miniature LED chip comprises a miniature LED unit array, and each miniature LED unit comprises a first semiconductor layer on the light emitting side; a first partition layer is arranged on the first semiconductor layer, so that the first partition layer comprises a first through hole array, each first through hole corresponds to the micro LED unit, the first through hole array comprises multiple groups of first through holes, and each group of first through holes comprises at least two first through holes; each group of first through holes are filled with a photoluminescent material layer and a first light absorption layer, the first light absorption layer is used for partially absorbing light emitted by the micro LED unit, the color of the light emitted by the micro LED unit is different from the color corresponding to the photoluminescent material layer, and the micro LED device is obtained.

Description

Technical Field

[0001] The present disclosure relates to the technical field of semiconductor Micro LED, and in particular, to a method for preparing a Micro LED device, a Micro LED device and a display device. Background Art

[0002] Micro-LED is a comprehensive technology that integrates new display technology and light-emitting diode (LED) technology. It has the advantages of small size, high brightness, high resolution, and low power consumption. It is considered to be one of the most promising next-generation new display and light-emitting devices. Currently, Micro LED full-color display can be achieved in a variety of ways, one of which is the color conversion method. However, the full-color Micro LED device achieved by the color conversion method still has problems such as unsatisfactory display effects. Summary of the invention

[0003] The solution disclosed herein provides a method for preparing a micro LED device, a micro LED device, and a display device.

[0004] According to one aspect of an embodiment of the present disclosure, a method for preparing a micro LED device is provided, wherein the method comprises: obtaining a micro LED chip structure, wherein the micro LED chip structure comprises a micro LED chip, wherein the micro LED chip comprises a micro LED unit array, wherein each micro LED unit in the micro LED unit array comprises a first semiconductor layer on a light emitting side; providing a first barrier layer on the first semiconductor layer, so that the first barrier layer comprises a first through hole array, wherein each first through hole in the first through hole array corresponds to a micro LED unit in the micro LED unit array, wherein the first through hole array comprises a plurality of groups of first through holes, wherein each group of first through holes comprises at least two first through holes; and filling each group of first through holes with a photoluminescent material layer and a first light absorbing layer, respectively, wherein the first light absorbing layer is used to partially absorb light emitted by the micro LED unit, and the color of the light emitted by the micro LED unit is different from the color corresponding to the photoluminescent material layer, thereby obtaining a micro LED device.

[0005] Further, after each group of first through holes is filled with a photoluminescent material layer and a first light absorbing layer, the method further includes: arranging a second barrier layer on the first barrier layer, the photoluminescent material layer and the first light absorbing layer, so that the second barrier layer is aligned with the first barrier layer and includes a second through hole array, the second through hole array is aligned with the first through hole array and is located above the first through hole array, wherein the second through hole array includes a plurality of groups of second through holes corresponding to the plurality of groups of first through holes, each group of second through holes includes at least two second through holes, and the number of second through holes in each group of second through holes is the same as the number of first through holes in each group of first through holes.

[0006] Further, each group of first through holes includes three first through holes, and a photoluminescent material layer and a first light absorbing layer are respectively filled in each group of first through holes, wherein the first light absorbing layer is used to partially absorb the light emitted by the micro LED unit, and the color of the light emitted by the micro LED unit is different from the color corresponding to the photoluminescent material layer. The method includes: filling a photoluminescent material layer of a first color and a photoluminescent material layer of a second color in two first through holes in each group of first through holes, respectively, and filling the first light absorbing layer in the first through hole not filled with the photoluminescent material layer in each group of first through holes, wherein the first light absorbing layer is used to partially absorb the light of a third color emitted by the micro LED unit, and the light corresponding to the first color, the light corresponding to the second color, and the light of the third color are synthesized to obtain white light.

[0007] Further, each group of second through holes includes three second through holes. After the second barrier layer is arranged on the first barrier layer, the photoluminescent material layer and the first light absorbing layer, the method further includes a first filling step. When the first filling step is completed, a first intermediate structure is obtained. The first filling step includes at least one of the following steps: filling a first filling part in the second through hole above the first through hole filled with the photoluminescent material layer of the first color, the first filling part including a first filter layer that only allows light of the first color to pass through, a second light absorbing layer or a transparent material for partially absorbing light of the third color; filling a first filling part in the second through hole above the first through hole filled with the photoluminescent material layer of the first color, the first filling part including a first filter layer that only allows light of the first color to pass through, a second light absorbing layer or a transparent material for partially absorbing light of the third color; A second filling part is filled in a second through hole above the first through hole of the luminescent material layer, wherein the second filling part includes a second filter layer that only allows light of the second color to pass through, a second light absorbing layer or a transparent material for partially absorbing light of a third color; a third filling part is filled in a second through hole above the first through hole filled with the first light absorbing layer, wherein the third filling part includes a third filter layer that only allows light of the third color to pass through, a second light absorbing layer or a transparent material for partially absorbing light of the third color, and the second light absorbing layer included in the first filling part, the second filling part and the third filling part is made of the same material as the first light absorbing layer.

[0008] Further, the first color is red, the second color is green and the third color is blue.

[0009] Further, each group of first through holes includes two first through holes, and a photoluminescent material layer and a first light absorbing layer are respectively filled in each group of first through holes, wherein the first light absorbing layer is used to partially absorb the light emitted by the micro LED unit, and the color of the light emitted by the micro LED unit is different from the color corresponding to the photoluminescent material layer. The method includes: filling a photoluminescent material layer of a fourth color in one first through hole in each group of first through holes, and filling the first light absorbing layer in a first through hole in each group of first through holes that is not filled with the photoluminescent material layer, wherein the first light absorbing layer is used to partially absorb the light of a third color emitted by the micro LED unit, and white light is obtained by synthesizing the light of the fourth color and the light of the third color.

[0010] Further, each group of second through holes includes two second through holes. After the second barrier layer is provided on the first barrier layer, the photoluminescent material layer and the first light absorbing layer, the method further includes a second filling step. When the second filling step is completed, a second intermediate structure is obtained. The second filling step includes at least one of the following steps: filling a fourth filling part in the second through hole above the first through hole filled with the photoluminescent material layer of a fourth color, the fourth filling part including a fourth filter layer that only allows light of the fourth color to pass through, a second light absorbing layer or a transparent material for partially absorbing light of the third color; filling a fifth filling part in the second through hole above the first through hole filled with the first light absorbing layer, the fifth filling part including a third filter layer that only allows light of the third color to pass through, a second light absorbing layer or a transparent material for partially absorbing light of the third color, wherein the second light absorbing layer included in the fourth filling part and the fifth filling part is made of the same material as the first light absorbing layer.

[0011] Further, the fourth color is yellow light and the third color is blue.

[0012] Further, a first barrier layer is arranged on the first semiconductor layer, so that the first barrier layer includes a first through hole array, each first through hole in the first through hole array corresponds to the micro LED unit in the micro LED unit array, wherein the first through hole array includes multiple groups of first through holes, and each group of first through holes includes at least two first through holes. The first through holes include: a first barrier layer is arranged on the first semiconductor layer, and a first through hole array is opened on the first barrier layer, so that each first through hole in the first through hole array corresponds to the micro LED unit in the micro LED unit array and exposes a portion of the first semiconductor layer, wherein the first through hole array includes multiple groups of first through holes, and each group of first through holes includes at least two first through holes.

[0013] Further, a second barrier layer is disposed on the first barrier layer, the photoluminescent material layer and the first light absorbing layer, so that the second barrier layer is aligned with the first barrier layer and includes a second through hole array, the second through hole array is aligned with the first through hole array and is located above the first through hole array, wherein the second through hole array includes a plurality of groups of second through holes corresponding to the plurality of groups of first through holes, each group of second through holes includes at least two second through holes, and the number of second through holes in each group of second through holes is the same as the number of first through holes in each group of first through holes. The method comprises: disposing a second barrier layer on the first barrier layer, the photoluminescent material layer and the first light absorbing layer, and opening a second through hole array on the second barrier layer, so that the second through hole array is aligned with the first through hole array and is located above the first through hole array, wherein the second through hole array includes a plurality of groups of second through holes corresponding to the plurality of groups of first through holes, each group of second through holes includes at least two second through holes, and the number of second through holes in each group of second through holes is the same as the number of first through holes in each group of first through holes.

[0014] Furthermore, before setting the first barrier layer on the first semiconductor layer, the method also includes: setting an insulating layer on the first semiconductor layer, setting the first barrier layer on the first semiconductor layer so that the first barrier layer includes a first through hole array, and each first through hole in the first through hole array corresponds to the micro LED unit in the micro LED unit array, including: setting the first barrier layer on the insulating layer and opening a first through hole array on the first barrier layer, so that each first through hole in the first through hole array corresponds to the micro LED unit in the micro LED unit array and exposes the insulating layer.

[0015] Furthermore, after each group of first through holes is filled with a photoluminescent material layer and a first light absorbing layer, the method further includes: providing a third light absorbing layer on the first barrier layer, the photoluminescent material layer and the first light absorbing layer, wherein the third light absorbing layer is used to partially absorb the light emitted by the micro LED unit, and the third light absorbing layer is made of the same material as the first light absorbing layer.

[0016] Furthermore, after the first filling step, the method further includes: setting a fourth light absorption layer on the first intermediate structure, wherein the fourth light absorption layer is used to partially absorb the third color of light emitted by the micro LED unit, and the third light absorption layer is made of the same material as the first light absorption layer.

[0017] Furthermore, after the second filling step, the method also includes: setting a fifth light absorption layer on the second intermediate structure, wherein the fifth light absorption layer is used to partially absorb the third color light emitted by the micro LED unit, and the third light absorption layer is made of the same material as the first light absorption layer.

[0018] Furthermore, after each group of first through holes is filled with a photoluminescent material layer and a first light absorbing layer, the method further comprises: arranging a first transparent cover plate on the first barrier layer, the photoluminescent material layer and the first light absorbing layer.

[0019] According to another aspect of the present disclosure, a micro LED device is also provided. The micro LED device comprises: a micro LED chip structure, which comprises a micro LED chip, the micro LED chip comprises a micro LED unit array, each micro LED unit in the micro LED unit array comprises a first semiconductor layer on the light emitting side; a first barrier layer, which is arranged on the first semiconductor layer, the first barrier layer comprises a first through hole array, each first through hole in the first through hole array corresponds to a micro LED unit in the micro LED unit array, wherein the first through hole array comprises a plurality of groups of first through holes, each group of first through holes comprises at least two first through holes; a photoluminescent material layer and a first light absorbing layer, the photoluminescent material layer and the first light absorbing layer are respectively filled in each group of first through holes, wherein the first light absorbing layer is used to partially absorb the light emitted by the micro LED unit, and the color of the light emitted by the micro LED unit is different from the color corresponding to the photoluminescent material layer.

[0020] Further, the micro LED device also includes a second barrier layer, which is arranged on the first barrier layer and aligned with the first barrier layer, and the second barrier layer includes a second through hole array, which is aligned with the first through hole array and located above the first through hole array, wherein the second through hole array includes multiple groups of second through holes corresponding to the multiple groups of first through holes, each group of second through holes includes at least two second through holes, and the number of second through holes in each group of second through holes is the same as the number of first through holes in each group of first through holes.

[0021] Further, each group of first through holes includes three first through holes, the photoluminescent material layer includes a photoluminescent material layer of a first color and a photoluminescent material layer of a second color, the photoluminescent material layer of the first color and the second color are respectively filled in two first through holes in each group of first through holes, and the first light absorption layer is filled in the first through hole in each group of first through holes that is not filled with the photoluminescent material layer, wherein the first light absorption layer is used to partially absorb the light of a third color emitted by the micro LED unit, and the light corresponding to the first color, the light corresponding to the second color and the light of the third color are synthesized to obtain white light.

[0022] Further, each group of second through holes includes three second through holes, and the micro LED device also includes at least one of a first filling part, a second filling part and a third filling part, wherein: the first filling part is filled in the second through hole above the first through hole filled with the photoluminescent material layer of the first color, and the first filling part includes a first filter layer that only allows light of the first color to pass through, and a second light absorbing layer or a transparent material for partially absorbing light of the third color; the second filling part is filled in the second through hole above the first through hole filled with the photoluminescent material layer of the second color, and the second filling part includes a second filter layer that only allows light of the second color to pass through, and a second light absorbing layer or a transparent material for partially absorbing light of the third color; the third filling part is filled in the second through hole above the first through hole filled with the first light absorbing layer, wherein the third filling part includes a third filter layer that only allows light of the third color to pass through, and a second light absorbing layer or a transparent material for partially absorbing light of the third color, wherein the second light absorbing layer included in the first filling part, the second filling part and the third filling part is the same material as the first light absorbing layer.

[0023] Further, the first color is red, the second color is green and the third color is blue.

[0024] Further, each group of first through holes includes two first through holes, the photoluminescent material layer includes a photoluminescent material of a fourth color, the photoluminescent material layer of the fourth color is filled in one first through hole in each group of first through holes, and the first light absorption layer is filled in the first through hole in each group of first through holes that is not filled with the photoluminescent material layer, wherein the first light absorption layer is used to partially absorb the light of the third color emitted by the micro LED unit, and the light of the fourth color and the light of the third color are synthesized to obtain white light.

[0025] Further, each group of second through holes includes two second through holes, and the micro LED device also includes at least one of a fourth filling part and a fifth filling part, wherein: the fourth filling part is filled in the second through hole above the first through hole filled with the photoluminescent material layer of the fourth color, and the fourth filling part includes a fourth filter layer that only allows light of the fourth color to pass through, and a second light absorption layer or a transparent material for partially absorbing light of the third color; the fifth filling part is filled in the second through hole above the first through hole filled with the first light absorption layer, wherein the fifth filling part includes a third filter layer that only allows light of the third color to pass through, and a second light absorption layer or a transparent material for partially absorbing light of the third color, and the second light absorption layer included in the fourth filling part and the fifth filling part is of the same material as the first light absorption layer.

[0026] Further, the fourth color is yellow and the third color is blue.

[0027] Furthermore, the micro LED device further includes an insulating layer, wherein the insulating layer is disposed on the first semiconductor layer, the first barrier layer is disposed on the insulating layer, and each first through hole in the first through hole array of the first barrier layer exposes the insulating layer.

[0028] Furthermore, the micro LED device also includes a third light absorption layer, which is arranged on the first barrier layer, the photoluminescent material layer and the first light absorption layer, wherein the third light absorption layer is used to partially absorb the third color of light emitted by the micro LED unit, and the third light absorption layer is made of the same material as the first light absorption layer.

[0029] Furthermore, the micro LED device also includes a fourth light absorption layer. When the micro LED device includes a first filter layer, a second filter layer and a second light absorption layer, the fourth light absorption layer is arranged on the second barrier layer, the first filter layer, the second filter layer and the second light absorption layer, wherein the fourth light absorption layer is used to partially absorb the third color of light emitted by the micro LED unit, and the fourth light absorption layer is made of the same material as the first light absorption layer.

[0030] Furthermore, the micro LED device also includes a first transparent cover plate, and the first transparent cover plate is arranged on the first barrier layer, the photoluminescent material layer and the first light absorption layer.

[0031] Furthermore, the micro LED chip structure also includes a driver chip, and the side of the micro LED chip opposite to the light emitting side is arranged on the driver chip, or the micro LED chip structure also includes a driver chip and a flexible circuit board, and the side of the micro LED chip opposite to the light emitting side is arranged on the driver chip to form a micro LED module, and the micro LED module is arranged on the flexible circuit board through the driver chip.

[0032] Further, the first semiconductor layer includes an N-GaN layer, the material of the first barrier layer and the material of the second barrier layer include visible light shielding materials, the material of the first color photoluminescent material layer and the material of the second color photoluminescent material layer include at least one of II-VI group quantum dots, III-V group quantum dots, perovskite quantum dots and carbon quantum dots, the material of the first light absorption layer and the material of the second light absorption layer include organic dyes, nano absorption particles or inorganic oxides for absorbing blue light, and the material of the first filter layer, the material of the second filter layer and the material of the third filter layer include organic dyes, nano absorption particles or inorganic oxides. According to another aspect of the embodiment of the present disclosure, a display device is also provided. The display device includes the above-mentioned micro LED device.

[0033] By applying the technical solution disclosed in the present invention, a micro LED chip is obtained, a barrier layer is directly set on the micro LED chip, and a photoluminescent material layer and a first light absorbing layer are respectively filled in each group of first through holes in the barrier layer, so as to form a micro LED device with a color conversion structure. In the micro LED device, light emitted by the micro LED unit of the micro LED chip excites the material in the photoluminescent material layer to emit light of a color different from that of the light emitted by the micro LED unit. Since the first light absorbing layer can partially absorb the light emitted by the micro LED unit, light overflow caused by the light emitted by the micro LED unit directly from the micro LED device is reduced, thereby reducing color deviation and poor color purity caused by light overflow, thereby improving the balance of light of different colors emitted from the micro LED device, improving the color purity of the micro LED, and further improving the display effect of the micro LED device. BRIEF DESCRIPTION OF THE DRAWINGS

[0034] By reading the detailed description below with reference to the accompanying drawings, the above and other purposes, features and advantages of the exemplary embodiments of the present disclosure will become readily understood. In the accompanying drawings, several embodiments of the present disclosure are shown in an exemplary and non-limiting manner, and the same or corresponding reference numerals represent the same or corresponding parts, wherein:

[0035] Figure 1 is a flow chart showing a method for preparing a micro LED device according to one embodiment of the present disclosure;

[0036] Figures 2 to 11 is a schematic diagram showing a preparation process flow of a method for preparing a micro LED device according to an embodiment of the present disclosure. DETAILED DESCRIPTION

[0037] It should be noted that, in the absence of conflict, the embodiments and features in the embodiments of the present application can be combined with each other. The present disclosure will be described in detail below with reference to the accompanying drawings and in combination with the embodiments.

[0038] It should be noted that the following detailed descriptions are illustrative and are intended to provide further explanation of the present application. Unless otherwise specified, all technical and scientific terms used herein have the same meanings as those commonly understood by those skilled in the art to which the present application belongs.

[0039] For ease of description, spatially relative terms such as "above", "above", "on the upper surface of", "above", etc. may be used herein to describe the spatial positional relationship between a device or feature and other devices or features as shown in the figure. It should be understood that spatially relative terms are intended to include different orientations of the device in use or operation in addition to the orientation described in the figure. For example, if the device in the accompanying drawings is inverted, the device described as "above other devices or structures" or "above other devices or structures" will be positioned as "below other devices or structures" or "below other devices or structures". Thus, the exemplary term "above" may include both "above" and "below". The device may also be positioned in other different ways, rotated 90 degrees or in other orientations, and the spatially relative descriptions used herein are interpreted accordingly.

[0040] Now, exemplary embodiments according to the present disclosure will be described in more detail with reference to the accompanying drawings. However, these exemplary embodiments can be implemented in a variety of different forms and should not be construed as being limited to the embodiments described herein. It should be understood that these embodiments are provided to make the disclosure of the present application thorough and complete, and to fully convey the concepts of these exemplary embodiments to those of ordinary skill in the art. In the accompanying drawings, for clarity, the thickness of the layers and regions is enlarged, and the same reference numerals are used to represent the same devices, and thus their descriptions will be omitted.

[0041] The present invention provides a method for preparing a micro LED device. Figures 1 to 11 , Figure 1 is a flow chart showing a method for preparing a micro LED device according to one embodiment of the present disclosure; Figures 2 to 11 is a schematic diagram showing a preparation process flow of a method for preparing a micro LED device according to an embodiment of the present disclosure.

[0042] like Figure 1 As shown, the method for preparing a micro LED device includes the following steps S101-S103.

[0043] Step S101: Acquire a micro LED chip structure, wherein the micro LED chip structure comprises a micro LED chip, wherein the micro LED chip comprises a micro LED unit array, and each micro LED unit in the micro LED unit array comprises a first semiconductor layer on a light emitting side.

[0044] Step S102: Disposing a first barrier layer on the first semiconductor layer, so that the first barrier layer includes a first through hole array, each first through hole in the first through hole array corresponds to a micro LED unit in the micro LED unit array, wherein the first through hole array includes multiple groups of first through holes, and each group of first through holes includes at least two first through holes.

[0045] Step S103: Filling a photoluminescent material layer and a first light absorbing layer in each group of first through holes respectively, wherein the first light absorbing layer is used to partially absorb the light emitted by the micro LED unit, and the color of the light emitted by the micro LED unit is different from the color corresponding to the photoluminescent material layer, thereby obtaining a micro LED device.

[0046] According to the technical solution, a micro LED device with a color conversion structure can be formed by obtaining a micro LED chip, directly setting a barrier layer on the micro LED chip, and filling a photoluminescent material layer and a first light absorbing layer in each group of first through holes in the barrier layer. In the micro LED device, light emitted by the micro LED unit of the micro LED chip excites the material in the photoluminescent material layer to emit light of a color different from that of the light emitted by the micro LED unit. Since the first light absorbing layer can partially absorb the light emitted by the micro LED unit, light overflow caused by the light emitted by the micro LED unit directly from the micro LED device is reduced, thereby reducing color deviation and poor color purity caused by light overflow, thereby improving the balance of light of different colors emitted from the micro LED device, improving the color purity of the micro LED, and further improving the display effect of the micro LED device.

[0047] In step S101, a micro LED chip structure may be obtained, wherein the micro LED chip structure includes a micro LED chip, wherein the micro LED chip includes a micro LED unit array, and each micro LED unit in the micro LED unit array includes a first semiconductor layer on a light emitting side.

[0048] According to an embodiment of the present disclosure, a micro LED chip structure can be first obtained, wherein the micro LED chip structure includes a micro LED chip, and the micro LED chip includes a micro LED unit array for emitting light. The micro LED chip can be any micro LED chip suitable for preparing a micro LED device. For example, the structure of the micro LED chip can include a face-up structure, a flip-chip structure, or a vertical structure, etc., which is not limited here. Each micro LED unit in the micro LED unit array can include an exposed first semiconductor layer on its light-emitting side. Depending on the type of the micro LED device, in some embodiments, the first semiconductor layer can include an N-GaN layer; in other embodiments, the first semiconductor layer can include a P-GaN layer.

[0049] According to an embodiment of the present disclosure, the micro LED chip structure also includes a driving chip, and the side of the micro LED chip opposite to the light emitting side is arranged on the driving chip, or the micro LED chip structure also includes a driving chip and a flexible circuit board, and the side of the micro LED chip opposite to the light emitting side is arranged on the driving chip to form a micro LED module, and the micro LED module is arranged on the flexible circuit board through the driving chip.

[0050] Reference Figure 2-Figure 11 ,in Figure 2 FIG. 4 shows a side view of a micro LED chip structure according to an embodiment of the present disclosure. Figure 2As shown, the micro LED chip structure includes a micro LED chip 10, and the micro LED chip 10 includes a micro LED unit array 101 composed of micro LED units 1011. Each micro LED unit 1011 in the micro LED unit array 101 includes a first semiconductor layer 10111 such as an N-GaN layer on the light emitting side. Figure 2 As shown, the first semiconductor layer 10111 is common to each micro LED unit 1011 in the micro LED unit array 101 , that is, the first semiconductor layer 10111 is integrated in the micro LED chip 10 .

[0051] In step S102, a first barrier layer may be provided on the first semiconductor layer, so that the first barrier layer includes a first through hole array, each first through hole in the first through hole array corresponds to a micro LED unit in the micro LED unit array, wherein the first through hole array includes a plurality of groups of first through holes, and each group of first through holes includes at least two first through holes.

[0052] According to an embodiment of the present disclosure, a first barrier layer may be provided on the exposed first semiconductor layer. The first barrier layer may function as a grid, and the interior of the grid may be filled with a corresponding material. In some embodiments, the first barrier layer may include a visible light shielding material, which may include, for example, a matte material such as a black photoresist, or a reflective material such as a metal layer.

[0053] Further, a first barrier layer is provided on the first semiconductor layer, so that the first barrier layer includes a first through hole array, each first through hole in the first through hole array corresponds to the micro LED unit in the micro LED unit array, wherein the first through hole array includes multiple groups of first through holes, and each group of first through holes includes at least two first through holes. It can include: a first barrier layer is provided on the first semiconductor layer, and a first through hole array is opened on the first barrier layer, so that each first through hole in the first through hole array corresponds to the micro LED unit in the micro LED unit array and exposes a portion of the first semiconductor layer, wherein the first through hole array includes multiple groups of first through holes, and each group of first through holes includes at least two first through holes. In this embodiment, the first barrier layer is provided on the first semiconductor layer, and the first through hole array can be formed by opening in the first barrier layer. In other embodiments, the first barrier layer including the first through hole array can be directly formed on the first semiconductor layer by some preparation processes.

[0054] According to an embodiment of the present disclosure, before the first barrier layer is provided on the first semiconductor layer, the method may further include: providing an insulating layer on the first semiconductor layer. Therefore, providing the first barrier layer on the first semiconductor layer so that the first barrier layer includes a first through-hole array, and each first through-hole in the first through-hole array corresponds to a micro LED unit in the micro LED unit array may include: providing the first barrier layer on the insulating layer and opening the first through-hole array on the first barrier layer so that each first through-hole in the first through-hole array corresponds to a micro LED unit in the micro LED unit array and exposes the insulating layer. The insulating layer may include, for example, a silicon dioxide layer. The insulating layer may separate the subsequently provided photoluminescent material layer and the first light absorbing layer from the first semiconductor layer to play an insulating role. In addition, the insulating layer may protect the micro LED chip, especially the first semiconductor layer, from damage during the subsequent preparation process. Furthermore, the insulating layer may be flat so as to facilitate the subsequent preparation process thereon.

[0055] Reference Figure 2-Figure 11 ,in Figure 3 FIG. 2 shows a side view of an insulating layer 201 disposed on the first semiconductor layer 10111 according to an embodiment of the present disclosure. Figure 3 As shown, plasma enhanced chemical vapor deposition (PECVD) can be used in Figure 2 An insulating layer 201 such as a silicon dioxide layer is deposited on the first semiconductor layer 10111 of the micro LED chip 10 as shown in FIG. Figure 3 Of course, the insulating layer may also include any other applicable materials, such as any applicable high molecular organic materials and inorganic oxides, and any applicable preparation process may be used to prepare the insulating layer for different materials.

[0056] Reference Figure 2-Figure 11 ,in Figure 4 FIG. 2 shows a side view of a first barrier layer 202 disposed on an insulating layer 201 according to an embodiment of the present disclosure. Figure 4 As shown, the first barrier layer 202 may be, for example, a black photoresist layer. Therefore, a layer of black photoresist may be coated on the insulating layer 201 such as a silicon dioxide layer by spin coating. Then, for example, a first through hole array 2020 may be opened on the black photoresist layer by photolithography, so that each first through hole 2021 in the first through hole array 2020 corresponds to the micro LED unit 1011 in the micro LED unit array 101 and exposes the insulating layer 201, and the insulating layer 201 is obtained as shown in FIG. Figure 4 For clarity and simplicity, Figure 4Only a group of first through holes included in the first through hole array 2020 is shown, and the group of first through holes includes three first through holes 2021, Figure 4 The number of groups of first through holes and the number of first through holes in each group of first through holes shown in the figure are merely illustrative and are not intended to be limiting herein.

[0057] In step S103, a photoluminescent material layer and a first light absorbing layer can be filled in each group of first through holes respectively, wherein the first light absorbing layer is used to partially absorb the light emitted by the micro LED unit, and the color of the light emitted by the micro LED unit is different from the color corresponding to the photoluminescent material layer, thereby obtaining a micro LED device.

[0058] According to an embodiment of the present disclosure, after obtaining the above-mentioned first through hole array, a photoluminescent material layer and a first light absorbing layer can be filled for the first through hole array. The first light absorbing layer partially absorbs the light emitted by the micro LED unit, so that a part of the light emitted by the micro LED unit is absorbed after passing through the first light absorbing layer, and the remaining light is emitted from the micro LED device. The color of the light emitted by the micro LED unit is different from the color corresponding to the photoluminescent material layer, so that the light emitted from the micro LED light-emitting unit realizes the full-color display of the micro LED device after passing through the photoluminescent material layer.

[0059] According to an embodiment of the present disclosure, each group of first through holes includes three first through holes, and a photoluminescent material layer and a first light absorption layer are filled in each group of first through holes respectively, wherein the first light absorption layer is used to partially absorb the light emitted by the micro LED unit, and the color of the light emitted by the micro LED unit is different from the color corresponding to the photoluminescent material layer. It can include: filling a photoluminescent material layer of a first color and a photoluminescent material layer of a second color in two first through holes in each group of first through holes respectively, and filling the first light absorption layer in the first through hole not filled with the photoluminescent material layer in each group of first through holes, wherein the first light absorption layer is used to partially absorb the light of a third color emitted by the micro LED unit, and the light corresponding to the first color, the light corresponding to the second color and the light of the third color are synthesized to obtain white light.

[0060] In this embodiment, the light of the first color refers to the light of the wavelength range corresponding to the first color, the light of the second color refers to the light of the wavelength range corresponding to the second color, and the light of the third color refers to the light of the wavelength range corresponding to the third color. The first color, the second color and the third color can be three primary colors, for example, the first color is red, the second color is green and the third color is blue. The material of the photoluminescent material layer of the first color and the material of the photoluminescent material layer of the second color include at least one of II-VI group quantum dots, III-V group quantum dots, perovskite quantum dots and carbon quantum dots, and the material of the first light absorbing layer includes organic dyes, nano absorption particles or inorganic oxides for absorbing blue light, for example, zinc oxide nanoparticle photoresist.

[0061] According to another embodiment of the present disclosure, each group of first through holes includes two first through holes, and a photoluminescent material layer and a first light absorbing layer are respectively filled in each group of first through holes, wherein the first light absorbing layer is used to partially absorb the light emitted by the micro LED unit, and the color of the light emitted by the micro LED unit is different from the color corresponding to the photoluminescent material layer. The method includes: filling a photoluminescent material layer of a fourth color in one first through hole in each group of first through holes, and filling the first light absorbing layer in a first through hole in each group of first through holes that is not filled with the photoluminescent material layer, wherein the first light absorbing layer is used to partially absorb the light of a third color emitted by the micro LED unit, and white light is obtained by synthesizing the light of the fourth color and the light of the third color.

[0062] In this embodiment, the light of the fourth color refers to the light of the wavelength range corresponding to the fourth color, the fourth color is yellow light and the third color is blue. The material of the photoluminescent material layer of the fourth color may include at least one of group II-VI quantum dots, group III-V quantum dots, perovskite quantum dots and carbon quantum dots, and the material of the first light absorption layer may include organic dyes, nano absorption particles or inorganic oxides for absorbing blue light, for example, zinc oxide nanoparticle photoresist.

[0063] Reference Figure 2-Figure 11 ,in Figure 5 A schematic side view of a photoluminescent material layer filled in each group of first through holes is shown. Figure 4 ,like Figure 5 As shown, each group of first through holes includes three first through holes 2021 , and two first through holes 2021 in each group of first through holes are filled with a first color photoluminescent material layer 2031 and a second color photoluminescent material layer 2032 , respectively.

[0064] Reference Figure 2-Figure 11 ,in Figure 6 A schematic side view of a first light absorbing layer filled in a first through hole not filled with a photoluminescent material layer in each group of first through holes is shown. Figure 4 and Figure 5 ,like Figure 6 As shown, the first light absorption layer 2033 is filled in the first through holes 2021 in each group of first through holes that are not filled with the photoluminescent material layer.

[0065] It is worth noting that the filling order of the first color photoluminescent material layer 2031, the second color photoluminescent material layer 2032 and the first light absorbing layer 2033 is only exemplary and is not limited here. The filling order of the first color photoluminescent material layer 2031, the second color photoluminescent material layer 2032 and the first light absorbing layer 2033 can be adjusted arbitrarily according to the actual preparation conditions such as specific processes and equipment. In addition, the third color light emitted by the micro LED unit 1011 excites the first color photoluminescent material layer 2031 to emit the first color light, and the third color light emitted by the micro LED unit 1011 excites the second color photoluminescent material layer 2032 to emit the second color light. The third color light emitted by the micro LED unit 1011 is partially absorbed after passing through the first light absorbing layer 2033, and the light passing through the first light absorbing layer 2033 is still the third color. The first color light, the second color light and the third color light emitted through the photoluminescent material layer and the first light absorbing layer can be synthesized to obtain white light. Furthermore, the first color, the second color and the third color can be three primary colors, for example, the first color is red, the second color is green and the third color is blue. Therefore, by providing a first light absorption layer that partially absorbs the blue light emitted by the micro LED unit, the blue light overflow caused by the blue light emitted by the micro LED unit directly from the micro LED device can be reduced, thereby reducing the color deviation and poor color purity caused by the light overflow, thereby improving the balance of different colors of light emitted from the micro LED device, improving the color purity of the micro LED, and then improving the display effect of the micro LED device.

[0066] thus, Figure 6 A micro LED device 1 is shown after being manufactured according to an embodiment of the present disclosure.

[0067] According to an embodiment of the present disclosure, after each group of first through holes is filled with a photoluminescent material layer and a first light absorbing layer, the method may further include: arranging a first transparent cover plate on the first barrier layer, the photoluminescent material layer and the first light absorbing layer. Figure 6In the structure shown, that is, an adhesive is arranged on the first barrier layer, and the first transparent cover plate (not shown in the drawings) is bonded to the first barrier layer by the adhesive, so that the first transparent cover plate is arranged on the first barrier layer, the photoluminescent material layer and the first light absorbing layer, and a micro LED device (not shown in the drawings) of an embodiment of the present disclosure is obtained, and the first transparent cover plate can protect the internal components of the micro LED device. The first transparent cover plate may include any suitable cover plate such as a glass cover plate, a polyimide cover plate or a sapphire cover plate.

[0068] According to an embodiment of the present disclosure, after the photoluminescent material layer and the first light absorbing layer are respectively filled in each group of first through holes, the method may further include: arranging a second barrier layer on the first barrier layer, the photoluminescent material layer and the first light absorbing layer, so that the second barrier layer is aligned with the first barrier layer and includes a second through hole array, the second through hole array is aligned with the first through hole array and is located above the first through hole array, wherein the second through hole array includes a plurality of groups of second through holes corresponding to the plurality of groups of first through holes, each group of second through holes includes at least two second through holes, and the number of second through holes in each group of second through holes is the same as the number of first through holes in each group of first through holes. The second barrier layer may include a visible light shielding material, which may include, for example, a matte material such as black photoresist, a reflective material such as a metal layer.

[0069] Further, disposing a second barrier layer on the first barrier layer, the photoluminescent material layer and the first light absorbing layer, so that the second barrier layer is aligned with the first barrier layer and includes a second through hole array, the second through hole array is aligned with the first through hole array and is located above the first through hole array, wherein the second through hole array includes a plurality of groups of second through holes corresponding to the plurality of groups of first through holes, each group of second through holes includes at least two second through holes, and the number of second through holes in each group of second through holes is the same as the number of first through holes in each group of first through holes. The method may include: disposing a second barrier layer on the first barrier layer, the photoluminescent material layer and the first light absorbing layer, and opening a second through hole array on the second barrier layer, so that the second through hole array is aligned with the first through hole array and is located above the first through hole array, wherein the second through hole array includes a plurality of groups of second through holes corresponding to the plurality of groups of first through holes, each group of second through holes includes at least two second through holes, and the number of second through holes in each group of second through holes is the same as the number of first through holes in each group of first through holes. In this embodiment, the second barrier layer is disposed on the first barrier layer, the photoluminescent material layer and the first light absorbing layer, and the second through hole array can be formed by opening in the second barrier layer. In other embodiments, the second barrier layer including the second through hole array can be formed directly on the first barrier layer by some preparation processes.

[0070] According to one embodiment of the present disclosure, when each group of first through holes includes three first through holes, each group of second through holes includes three second through holes. After the second barrier layer is disposed on the first barrier layer, the photoluminescent material layer and the first light absorbing layer, the method may further include a first filling step. When the first filling step is completed, a first intermediate structure is obtained. The first filling step includes at least one of the following steps: a first filling portion is filled in a second through hole above the first through hole filled with the photoluminescent material layer of the first color, the first filling portion includes a first filter layer that only allows light of the first color to pass through, a second light absorbing layer or a transparent material for partially absorbing light of a third color; a second filling portion is filled in a second through hole above the first through hole filled with the photoluminescent material layer of the second color, the second filling portion includes a second filter layer that only allows light of the second color to pass through, a second light absorbing layer or a transparent material for partially absorbing light of the third color; a third filling portion is filled in a second through hole above the first through hole filled with the first light absorbing layer, the third filling portion includes a third filter layer that only allows light of the third color to pass through, a second light absorbing layer or a transparent material for partially absorbing light of the third color, wherein the second light absorbing layer included in the first filling portion, the second filling portion and the third filling portion is made of the same material as the first light absorbing layer. The material of the second light absorption layer includes organic dyes, nano absorption particles or inorganic oxides for absorbing blue light, for example, zinc oxide nanoparticle photoresist. The material of the first filter layer, the material of the second filter layer and the material of the third filter layer include organic dyes, nano absorption particles or inorganic oxides.

[0071] According to another embodiment of the present disclosure, in the case where each group of first through holes includes two first through holes, each group of second through holes includes two second through holes. After the second barrier layer is provided on the first barrier layer, the photoluminescent material layer and the first light absorbing layer, the method further includes a second filling step, after the second filling step, a fourth filling part is filled in the second through hole above the first through hole filled with the photoluminescent material layer of the fourth color, the fourth filling part includes a fourth filter layer that only allows light of the fourth color to pass through, a second light absorbing layer or a transparent material for partially absorbing light of the third color; a fifth filling part is filled in the second through hole above the first through hole filled with the first light absorbing layer, the fifth filling part includes a third filter layer that only allows light of the third color to pass through, a second light absorbing layer or a transparent material for partially absorbing light of the third color, wherein the second light absorbing layer included in the fourth filling part and the fifth filling part is the same material as the first light absorbing layer. The material of the second light absorbing layer includes organic dyes, nano absorption particles or inorganic oxides for absorbing blue light, such as zinc oxide nanoparticle photoresist, and the material of the fourth light filtering layer includes organic dyes, nano absorption particles or inorganic oxides.

[0072] Reference Figure 2-Figure 11 ,in Figure 7 FIG. 2 shows a side view of a second barrier layer 204 disposed on the first barrier layer 202. Figure 7 As shown, the second barrier layer 204 may be, for example, a black photoresist layer, and thus may be formed on the substrate by spin coating. Figure 6 In the structure shown, a black photoresist layer is coated on the first barrier layer, the photoluminescent material layer and the first light absorbing layer, and then a second through hole array 2040 can be opened on the black photoresist layer, for example, by photolithography, so that the second through hole array 2040 is aligned with the first through hole array 2020 and is located above the first through hole array 2020 and exposes the photoluminescent material layer and the first light absorbing layer filled in the first through holes, wherein the second through hole array 2040 includes a plurality of groups of second through holes corresponding to the plurality of groups of first through holes, each group of second through holes includes at least two second through holes 2041, and the number of second through holes in each group of second through holes is the same as the number of first through holes in each group of first through holes. For clarity and simplicity, Figure 7 Only one group of second through holes included in the second through hole array 2040 is shown, and the group of second through holes includes three second through holes 2041. Figure 7 The number of groups of second through holes and the number of second through holes in each group of second through holes are only schematic and correspond to the arrangement of the first through holes, and are not limited here. The second barrier layer 204 such as a black photoresist layer can make the screen appear black when the display device is powered off or turned off.

[0073] Reference Figure 2-Figure 11 ,in Figure 8 A side view schematic diagram of filling a filling portion in each group of second through holes is shown. Figure 7 ,like Figure 8 As shown, each group of second through holes includes three second through holes 2041, a first filter layer 2051 that allows only light of the first color to pass through is filled in the second through hole 2041 above the first through hole 2021 filled with the photoluminescent material layer 2031 of the first color; a second filter layer 2052 that allows only light of the second color to pass through is filled in the second through hole 2041 above the first through hole 2021 filled with the photoluminescent material layer 2032 of the second color; and a second light absorption layer 2053 for partially absorbing light of the third color is filled in the second through hole 2041 above the first through hole 2021 filled with the first light absorption layer 2033, wherein the second light absorption layer 2053 is made of the same material as the first light absorption layer 2033, thereby obtaining Figure 8 The second light absorbing layer 2053 can form an integral body with the first light absorbing layer 2033 to further enhance the absorption of the third color light emitted by the micro LED unit 1011, thereby further reducing the light overflow caused by the light emitted by the micro LED unit directly emitted from the micro LED device, and further improving the balance of different colors of light emitted from the micro LED device, thereby further improving the display effect of the micro LED device.

[0074] It is worth noting that the first filter layer only allows light of the first color to pass through, and the first filter layer will reflect light of other colors, such as light of the third color, back to the photoluminescent material layer of the first color, so that the light of the third color re-participates in exciting the photoluminescent material layer of the first color. The second filter layer only allows light of the second color to pass through, and the second filter layer will reflect light of other colors, such as light of the third color, back to the photoluminescent material layer of the second color, so that the light of the third color re-participates in exciting the photoluminescent material layer of the second color. The third filter layer only allows light of the third color to pass through, and the third filter layer will reflect light of other colors back to the first light absorption layer, so that the first light absorption layer absorbs it. Therefore, the functions of the first filter layer, the second filter layer and the third filter layer are to reflect light other than the light of the corresponding color, which is different from the function of the first light absorption layer.

[0075] thus, Figure 8 The first intermediate structure shown can be used as a manufactured micro LED device 2 according to an embodiment of the present disclosure.

[0076] According to an embodiment of the present disclosure, after the first filling step, the method may further include: disposing a second transparent cover plate on the first intermediate structure.

[0077] Reference Figure 2-Figure 11 ,in Fig. 9 Shown in Figure 8 FIG. 2 is a side view of a second transparent cover plate 206 disposed on the first intermediate structure. Fig. 9 As shown, an adhesive is provided on the second barrier layer 204, and the second transparent cover plate 206 is bonded to the second barrier layer 204 by the adhesive, thereby completing the setting of the second transparent cover plate 206, and obtaining the following Fig. 9 In the micro LED device 3 according to one embodiment of the present disclosure, the second transparent cover plate 206 can protect the internal components of the micro LED device 3. The second transparent cover plate can include any suitable cover plate such as a glass cover plate, a polyimide cover plate or a sapphire cover plate.

[0078] According to an embodiment of the present disclosure, after each group of first through holes is filled with a photoluminescent material layer and a first light absorbing layer, the method further includes: providing a third light absorbing layer on the first barrier layer, the photoluminescent material layer and the first light absorbing layer, wherein the third light absorbing layer is used to partially absorb the light emitted by the micro LED unit, and the third light absorbing layer is made of the same material as the first light absorbing layer.

[0079] Reference Figure 2-Figure 11 ,in Fig.10 FIG. 2 shows a side view schematic diagram of a third light absorbing layer 2034 disposed on the first barrier layer, the photoluminescent material layer and the first light absorbing layer. Figure 6 ,like Fig.10As shown, a third light absorbing layer 2034 of the same material as the first light absorbing layer 2031 is disposed on the first barrier layer 202, the first color photoluminescent material layer 2031, the second color photoluminescent material layer 2032 and the first light absorbing layer 2033, to obtain a micro LED device of an embodiment of the present disclosure, and the material of the third light absorbing layer 2034 can be, for example, zinc oxide nanoparticle photoresist. On the one hand, the third light absorbing layer 2034 can further enhance the absorption of the third color light (e.g., blue light) emitted by the micro LED unit 1011, thereby further reducing the light overflow (e.g., blue light overflow) caused by the third color light (e.g., blue light) emitted by the micro LED unit directly from the micro LED device, thereby further improving the balance of light of different colors emitted from the micro LED device, thereby further improving the display effect of the micro LED device. On the other hand, when the light of the third color (e.g., blue light) emitted by the micro LED unit excites the photoluminescent material layer 2031 of the first color (e.g., red) and the photoluminescent material layer 2032 of the second color (e.g., green), part of the light of the third color (e.g., blue light) will pass through the photoluminescent material layer 2031 of the first color (e.g., red) and the photoluminescent material layer 2032 of the second color (e.g., green) and leak out. The third light absorption layer 2034 can absorb the part of the leaked light of the third color (e.g., blue light), thereby preventing the part of the leaked light of the third color (e.g., blue light) from being mixed with the light of the first color (e.g., red light) and the light of the second color (e.g., green light) obtained by the excitation, resulting in insufficient color purity and low saturation, thereby further improving the display effect of the micro LED device.

[0080] According to an embodiment of the present disclosure, after the third light absorbing layer is provided, the second barrier layer as described above may be provided on the third light absorbing layer, and then the first filling step as described above may be performed. Fig.10 As shown, after the third light absorption layer 2034 is provided, the third light absorption layer 2034 may be provided with Figure 7 The second barrier layer 204 described above is then Figure 8 The first filling step described above obtains the micro LED device of one embodiment of the present disclosure.

[0081] According to an embodiment of the present disclosure, after the first filling step is completed, a second transparent cover plate may be disposed on the first intermediate structure as described above. Fig.10 As shown, in the above reference Figure 8 After the first filling step described, as Fig. 9 The second transparent cover plate 206 is arranged as described to obtain the micro LED device 4 of an embodiment of the present disclosure. The second transparent cover plate 206 can protect the internal components of the micro LED device 4.

[0082] According to an embodiment of the present disclosure, in one embodiment, after the first filling step, the method further includes: setting a fourth light absorption layer on the first intermediate structure, wherein the fourth light absorption layer is used to partially absorb the third color light emitted by the micro LED unit, and the fourth light absorption layer is made of the same material as the first light absorption layer, and the material of the fourth light absorption layer may be, for example, zinc oxide nanoparticle photoresist. In another embodiment, after the second filling step, the method further includes: setting a fifth light absorption layer on the second intermediate structure, wherein the fifth light absorption layer is used to partially absorb the third color light emitted by the micro LED unit, and the fifth light absorption layer is made of the same material as the first light absorption layer, and the material of the fifth light absorption layer may be, for example, zinc oxide nanoparticle photoresist.

[0083] Reference Figure 2-Figure 11 ,in Fig.11 A side view schematic diagram of the fourth light absorbing layer 2035 disposed on the second barrier layer 204, the first light filter layer 2051, the second light filter layer 2052 and the second light absorbing layer 2053 after the first filling step is shown. Figure 8 ,like Fig.11As shown, a fourth light absorbing layer 2035 made of the same material as the first light absorbing layer 2031 is disposed on the second barrier layer 204, the first light filter layer 2051, the second light filter layer 2052 and the second light absorbing layer 2053, thereby obtaining a micro LED device according to an embodiment of the present disclosure. On the one hand, the fourth light absorbing layer 2035 can further enhance the absorption of the third color light (e.g., blue light) emitted by the micro LED unit 1011, thereby further reducing the light overflow (e.g., blue light overflow) caused by the third color light (e.g., blue light) emitted by the micro LED unit directly being emitted from the micro LED device, thereby further improving the balance of light of different colors emitted from the micro LED device, thereby further improving the display effect of the micro LED device. On the other hand, when the light of the third color (e.g., blue light) emitted by the micro LED unit excites the photoluminescent material layer 2031 of the first color (e.g., red) and the photoluminescent material layer 2032 of the second color (e.g., green), part of the light of the third color (e.g., blue light) will pass through the photoluminescent material layer 2031 of the first color (e.g., red) and the photoluminescent material layer 2032 of the second color (e.g., green) and leak out. After passing through the first filter layer 2051 and the second filter layer 2052, part of the light of the third color (e.g., blue light) may still leak out. The third light absorption layer 2034 can absorb the part of the leaked third color light (e.g., blue light), thereby preventing the part of the leaked third color light (e.g., blue light) from being mixed with the first color light (e.g., red light) and the second color light (e.g., green light) obtained by the excitation and causing insufficient color purity, thereby further improving the display effect of the micro LED device.

[0084] According to an embodiment of the present disclosure, after the fourth light absorbing layer is provided, the second transparent cover plate as described above may be provided on the fourth light absorbing layer. Fig.11 As shown, a second transparent cover plate 206 is disposed on the fourth light absorbing layer 2035 to obtain a micro LED device 5 according to an embodiment of the present disclosure. The second transparent cover plate 206 can protect the internal components of the micro LED device 5 .

[0085] The present disclosure also provides a micro LED device.

[0086] like Figure 2-Figure 11As shown, the micro LED devices 1, 2, 3, 4, 5 include: a micro LED unit chip structure, the micro LED unit chip structure includes a micro LED unit chip 10, the micro LED unit chip 10 includes a micro LED unit array 101, each micro LED unit 1011 in the micro LED unit array includes a first semiconductor layer 10111 on the light emitting side; a first barrier layer 202, which is arranged on the first semiconductor layer 10111, the first barrier layer 202 includes a first through hole array 2020, each first through hole 202 in the first through hole array 2020 1 corresponds to the micro LED unit 1011 in the micro LED unit array 101, wherein the first through hole array 2020 includes a plurality of groups of first through holes, each group of first through holes includes at least two first through holes 2021; a photoluminescent material layer and a first light absorbing layer 2033, the photoluminescent material layer and the first light absorbing layer 2033 are respectively filled in each group of first through holes, wherein the first light absorbing layer 2033 is used to partially absorb the light emitted by the micro LED unit 1011, and the color of the light emitted by the micro LED unit 1011 is different from the color corresponding to the photoluminescent material layer.

[0087] According to an embodiment of the present disclosure, the micro LED devices 2, 3, 4, 5 further include a second barrier layer 204, which is disposed on the first barrier layer 202 and aligned with the first barrier layer 202, and the second barrier layer 204 includes a second through hole array 2040, which is aligned with the first through hole array 2020 and located above the first through hole array 2020, wherein the second through hole array 2040 includes a plurality of groups of second through holes corresponding to the plurality of groups of first through holes, each group of second through holes includes at least two second through holes 2041, and the number of second through holes 2041 in each group of second through holes is the same as the number of first through holes 2021 in each group of first through holes.

[0088] According to an embodiment of the present disclosure, each group of first through holes includes three first through holes 2021, the photoluminescent material layer includes a photoluminescent material layer 2031 of a first color and a photoluminescent material layer 2032 of a second color, the first photoluminescent material layer 2031 of the second color and the photoluminescent material layer 2032 of the second color are respectively filled in two first through holes 2021 in each group of first through holes, and the first light absorption layer 2033 is filled in the first through hole 2021 that is not filled with the photoluminescent material layer in each group of first through holes, wherein the first light absorption layer 2033 is used to partially absorb the light of the third color emitted by the micro LED unit 1011, and the light corresponding to the first color, the light corresponding to the second color and the light of the third color are synthesized to obtain white light.

[0089] According to an embodiment of the present disclosure, each group of second through holes includes three second through holes 2041, and the micro LED devices 2, 3, 4, 5 further include at least one of a first filling portion, a second filling portion, and a third filling portion, wherein: the first filling portion is filled in the second through hole 2041 above the first through hole 2021 filled with the photoluminescent material layer 2031 of the first color, and the first filling portion includes a first filter layer 2051 that only allows light of the first color to pass through, a second light absorbing layer or a transparent material for partially absorbing light of the third color; the second filling portion is filled in the second through hole 2041 above the first through hole 2021 filled with the photoluminescent material layer 2032 of the second color. In the hole 2041, the second filling part includes a second filter layer 2052 that only allows light of the second color to pass through, a second light absorbing layer 2053 or a transparent material for partially absorbing light of the third color; the third filling part is filled in the second through hole 2041 above the first through hole 2021 filled with the first light absorbing layer 2033, wherein the third filling part includes a third filter layer that only allows light of the third color to pass through, a second light absorbing layer 2053 or a transparent material for partially absorbing light of the third color, wherein the second light absorbing layer 2053 included in the first filling part, the second filling part and the third filling part is the same material as the first light absorbing layer 2033.

[0090] According to an embodiment of the present disclosure, the first color is red, the second color is green, and the third color is blue.

[0091] According to an embodiment of the present disclosure, each group of first through holes includes two first through holes, the photoluminescent material layer includes a photoluminescent material of a fourth color, the photoluminescent material layer of the fourth color is filled in one first through hole in each group of first through holes, and the first light absorption layer is filled in the first through hole in each group of first through holes that is not filled with the photoluminescent material layer, wherein the first light absorption layer is used to partially absorb the light of the third color emitted by the micro LED unit, and the light of the fourth color and the light of the third color are synthesized to obtain white light.

[0092] According to an embodiment of the present disclosure, each group of second through holes includes two second through holes, and the micro LED device also includes at least one of a fourth filling part and a fifth filling part, wherein: the fourth filling part is filled in the second through hole above the first through hole filled with the photoluminescent material layer of the fourth color, and the fourth filling part includes a fourth filter layer that only allows light of the fourth color to pass through, a second light absorption layer or a transparent material for partially absorbing light of the third color; the fifth filling part is filled in the second through hole above the first through hole filled with the first light absorption layer, wherein the fifth filling part includes a third filter layer that only allows light of the third color to pass through, a second light absorption layer or a transparent material for partially absorbing light of the third color, and the second light absorption layer included in the fourth filling part and the fifth filling part is of the same material as the first light absorption layer.

[0093] According to an embodiment of the present disclosure, the fourth color is yellow and the third color is blue.

[0094] According to an embodiment of the present disclosure, the micro LED device 1, 2, 3, 4, 5 also includes an insulating layer 201, which is arranged on the first semiconductor layer 10111, the first barrier layer 202 is arranged on the insulating layer 201, and each first through hole 2021 in the first through hole array 2020 of the first barrier layer 202 exposes the insulating layer 201.

[0095] According to an embodiment of the present disclosure, the micro LED device 4 further includes a third light absorbing layer 2034, and the third light absorbing layer 2034 is disposed on the first barrier layer 202, the photoluminescent material layer and the first light absorbing layer 2033, wherein the third light absorbing layer 2034 is used to partially absorb the third color of light emitted by the micro LED unit 1011, and the third light absorbing layer 2034 is made of the same material as the first light absorbing layer 2033.

[0096] According to an embodiment of the present disclosure, the micro LED device 5 also includes a fourth light absorption layer 2035. When the micro LED device 5 includes a first filter layer 2051, a second filter layer 2052 and a second light absorption layer 2053, the fourth light absorption layer 2035 is arranged on the second barrier layer 204, the first filter layer 2051, the second filter layer 2052 and the second light absorption layer 2053, wherein the fourth light absorption layer 2035 is used to partially absorb the third color of light emitted by the micro LED unit 1011, and the fourth light absorption layer 2035 is made of the same material as the first light absorption layer 2033.

[0097] According to an embodiment of the present disclosure, the micro LED device 1 further includes a first transparent cover plate, which is disposed on the first barrier layer 202 , the photoluminescent material layer and the first light absorbing layer 2033 .

[0098] According to an embodiment of the present disclosure, the micro LED chip structure also includes a driving chip, and the side of the micro LED chip opposite to the light emitting side is arranged on the driving chip, or the micro LED chip structure also includes a driving chip and a flexible circuit board, and the side of the micro LED chip opposite to the light emitting side is arranged on the driving chip to form a micro LED module, and the micro LED module is arranged on the flexible circuit board through the driving chip.

[0099] According to an embodiment of the present disclosure, the first semiconductor layer 10111 includes an N-GaN layer, the material of the first barrier layer 202 and the material of the second barrier layer 204 include visible light shielding materials, the material of the first color photoluminescent material layer 2031 and the material of the second color photoluminescent material layer 2032 include at least one of II-VI group quantum dots, III-V group quantum dots, perovskite quantum dots and carbon quantum dots, the material of the first light absorption layer 2033 and the material of the second light absorption layer 2053 include organic dyes, nano-absorption particles or inorganic oxides for absorbing blue light, and the material of the first filter layer 2051, the material of the second filter layer 2052 and the material of the third filter layer include organic dyes, nano-absorption particles or inorganic oxides.

[0100] It is worth noting that any relevant description about the micro LED device in the above-mentioned micro LED device preparation method (including but not limited to technical features and their functions, explanations, etc.) can be applied to the micro LED device disclosed in the present invention.

[0101] According to embodiments of the present disclosure, the pixel size in the micro LED device is typically less than 50 microns.

[0102] The micro LED device can be applied to flexible electronic devices to realize technologies such as augmented reality (AR), virtual reality (VR), extended reality (XR), and mixed reality (MR). For example, the micro LED device can be the projection part of an electronic device, such as a projector, a head-up display (HUD), etc.; for another example, the micro LED device can also be the display part of an electronic device, such as a smart phone, a smart watch, a laptop, a tablet computer, a driving recorder, a navigation system, a head-mounted device, and any other device with a display screen.

[0103] It should be noted that the terms used herein are only for describing specific embodiments and are not intended to limit the exemplary embodiments according to the present application. As used herein, unless the context clearly indicates otherwise, the singular form is also intended to include the plural form. In addition, it should be understood that when the terms "comprise" and / or "include" are used in this specification, it indicates the presence of features, steps, operations, devices, components and / or combinations thereof.

[0104] It should be understood that "one embodiment" or "an embodiment" mentioned throughout the specification means that specific features, structures or characteristics related to the embodiment are included in at least one embodiment of the present application. Therefore, "in one embodiment" or "in an embodiment" appearing throughout the specification does not necessarily refer to the same embodiment. In addition, these specific features, structures or characteristics can be combined in one or more embodiments in any suitable manner. It should be understood that in various embodiments of the present application, the size of the serial number of each step / process mentioned above does not mean the order of execution, and the execution order of each step / process should be determined by its function and internal logic, and should not constitute any limitation on the implementation process of the embodiment of the present application. In addition, the serial numbers of the embodiments of the present application mentioned above are only for description and do not represent the advantages and disadvantages of the embodiments.

[0105] It should be noted that the terms "first", "second", etc. in the specification and claims of the present application and the above-mentioned drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence. It should be understood that the data used in this way can be interchangeable where appropriate, so that the embodiments of the present application described herein can be implemented in an order other than those illustrated or described herein, for example. In addition, the terms "including" and "having" and any of their variations are intended to cover non-exclusive inclusions, for example, a process, method, system, product or device that includes a series of steps or units is not necessarily limited to those steps or units that are clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices.

[0106] The above description is only a preferred embodiment of the present disclosure and is not intended to limit the present disclosure. For those skilled in the art, the present disclosure may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present disclosure shall be included in the protection scope of the present disclosure.

Claims

1. A method for preparing a micro LED device, wherein: The method comprises: Acquire a micro LED chip structure, the micro LED chip structure comprising a micro LED chip, the micro LED chip comprising a micro LED unit array, each micro LED unit in the micro LED unit array comprising a first semiconductor layer on a light emitting side; Disposing a first barrier layer on the first semiconductor layer, so that the first barrier layer includes a first through hole array, each first through hole in the first through hole array corresponds to a micro LED unit in the micro LED unit array, wherein the first through hole array includes a plurality of groups of first through holes, and each group of first through holes includes at least two first through holes; A photoluminescent material layer and a first light absorbing layer are respectively filled in each group of first through holes, wherein the first light absorbing layer is used to partially absorb the light emitted by the micro LED unit, and the color of the light emitted by the micro LED unit is different from the color corresponding to the photoluminescent material layer, thereby obtaining a micro LED device.

2. The method for preparing a micro LED device according to claim 1, wherein: After each group of first through holes is filled with a photoluminescent material layer and a first light absorption layer, the method further includes: A second barrier layer is disposed on the first barrier layer, the photoluminescent material layer and the first light absorbing layer, so that the second barrier layer is aligned with the first barrier layer and comprises a second through hole array, the second through hole array is aligned with the first through hole array and is located above the first through hole array, wherein the second through hole array comprises a plurality of groups of second through holes corresponding to the plurality of groups of first through holes, each group of second through holes comprises at least two second through holes, and the number of second through holes in each group of second through holes is the same as the number of first through holes in each group of first through holes.

3. The method for preparing a micro LED device according to claim 2, wherein: Each group of first through holes includes three first through holes, and each group of first through holes is filled with a photoluminescent material layer and a first light absorption layer, wherein the first light absorption layer is used to partially absorb the light emitted by the micro LED unit, and the color of the light emitted by the micro LED unit is different from the color corresponding to the photoluminescent material layer, including: Two first through holes in each group of first through holes are filled with a first color photoluminescent material layer and a second color photoluminescent material layer, respectively, and the first through hole in each group of first through holes that is not filled with a photoluminescent material layer is filled with the first light absorption layer, wherein the first light absorption layer is used to partially absorb the third color light emitted by the micro LED unit, and the light corresponding to the first color, the light corresponding to the second color and the light corresponding to the third color are synthesized to obtain white light.

4. The method for preparing a micro LED device according to claim 3, wherein: Each group of second through holes includes three second through holes. After the second barrier layer is disposed on the first barrier layer, the photoluminescent material layer and the first light absorbing layer, the method further includes a first filling step. When the first filling step is completed, a first intermediate structure is obtained. The first filling step includes at least one of the following steps: Filling a first filling portion in a second through hole above the first through hole filled with the photoluminescent material layer of the first color, wherein the first filling portion includes a first filter layer that allows only light of the first color to pass through, a second light absorption layer for partially absorbing light of a third color, or a transparent material; Filling a second filling portion in a second through hole above the first through hole filled with the photoluminescent material layer of a second color, wherein the second filling portion includes a second filter layer that allows only light of the second color to pass through, a second light absorption layer for partially absorbing light of a third color, or a transparent material; filling a third filling portion in a second through hole above the first through hole filled with the first light absorbing layer, wherein the third filling portion includes a second light absorbing layer for partially absorbing light of a third color, The second light absorption layer included in the first filling part, the second filling part, and the third filling part is made of the same material as the first light absorption layer.

5. The method for preparing a micro LED device according to claim 3, wherein: The first color is red, the second color is green and the third color is blue.

6. The method for preparing a micro LED device according to claim 2, wherein: Each group of first through holes includes two first through holes, and each group of first through holes is filled with a photoluminescent material layer and a first light absorption layer, wherein the first light absorption layer is used to partially absorb the light emitted by the micro LED unit, and the color of the light emitted by the micro LED unit is different from the color corresponding to the photoluminescent material layer, including: A photoluminescent material layer of a fourth color is filled in a first through hole in each group of first through holes, and the first light absorbing layer is filled in a first through hole in each group of first through holes that is not filled with the photoluminescent material layer, wherein the first light absorbing layer is used to partially absorb the light of a third color emitted by the micro LED unit, and white light is obtained by synthesizing the light of the fourth color and the light of the third color.

7. The method for preparing a micro LED device according to claim 6, wherein: Each group of second through holes includes two second through holes. After the second barrier layer is disposed on the first barrier layer, the photoluminescent material layer and the first light absorbing layer, the method further includes a second filling step. When the second filling step is completed, a second intermediate structure is obtained. The second filling step includes at least one of the following steps: Filling a fourth filling portion in the second through hole above the first through hole filled with the photoluminescent material layer of the fourth color, wherein the fourth filling portion includes a fourth filter layer that allows only light of the fourth color to pass through, a second light absorption layer for partially absorbing light of the third color, or a transparent material; filling a fifth filling portion in a second through hole above the first through hole filled with the first light absorbing layer, wherein the fifth filling portion includes a second light absorbing layer for partially absorbing light of a third color, The second light absorption layer included in the fourth filling part and the fifth filling part is made of the same material as the first light absorption layer.

8. The method for preparing a micro LED device according to claim 6, wherein: The fourth color is yellow light and the third color is blue.

9. The method for preparing a micro LED device according to claim 1, wherein: A first barrier layer is disposed on the first semiconductor layer, so that the first barrier layer includes a first through hole array, each first through hole in the first through hole array corresponds to a micro LED unit in the micro LED unit array, wherein the first through hole array includes a plurality of groups of first through holes, each group of first through holes includes at least two first through holes including: A first barrier layer is disposed on the first semiconductor layer, and a first through hole array is opened on the first barrier layer, so that each first through hole in the first through hole array corresponds to a micro LED unit in the micro LED unit array and exposes a portion of the first semiconductor layer, wherein the first through hole array includes a plurality of groups of first through holes, and each group of first through holes includes at least two first through holes.

10. The method for preparing a micro LED device according to claim 2, wherein: Disposing a second barrier layer on the first barrier layer, the photoluminescent material layer and the first light absorbing layer, so that the second barrier layer is aligned with the first barrier layer and includes a second through hole array, the second through hole array is aligned with the first through hole array and is located above the first through hole array, wherein the second through hole array includes a plurality of groups of second through holes corresponding to the plurality of groups of first through holes, each group of second through holes includes at least two second through holes, and the number of second through holes in each group of second through holes is the same as the number of first through holes in each group of first through holes. The method comprises: disposing a second barrier layer on the first barrier layer, the photoluminescent material layer and the first light absorbing layer, and opening a second through hole array on the second barrier layer, so that the second through hole array is aligned with the first through hole array and is located above the first through hole array, wherein the second through hole array includes a plurality of groups of second through holes corresponding to the plurality of groups of first through holes, each group of second through holes includes at least two second through holes, and the number of second through holes in each group of second through holes is the same as the number of first through holes in each group of first through holes.

11. The method for preparing a micro LED device according to claim 1, wherein: Before providing the first barrier layer on the first semiconductor layer, the method further comprises: providing an isolation layer on the first semiconductor layer, A first barrier layer is arranged on the first semiconductor layer, so that the first barrier layer includes a first through hole array, and each first through hole in the first through hole array corresponds to the micro LED unit in the micro LED unit array, including: a first barrier layer is arranged on the insulation layer and a first through hole array is opened on the first barrier layer, so that each first through hole in the first through hole array corresponds to the micro LED unit in the micro LED unit array and the insulation layer is exposed.

12. The method for preparing a micro LED device according to claim 1, wherein: After each group of first through holes is filled with a photoluminescent material layer and a first light absorption layer, the method further includes: A third light absorbing layer is disposed on the first barrier layer, the photoluminescent material layer and the first light absorbing layer, wherein the third light absorbing layer is used to partially absorb the light emitted by the micro LED unit, and the third light absorbing layer is made of the same material as the first light absorbing layer.

13. The method for preparing a micro LED device according to claim 4, wherein: After the first filling step, the method further comprises: A fourth light absorption layer is disposed on the first intermediate structure, wherein the fourth light absorption layer is used to partially absorb light of a third color emitted by the micro LED unit, and the third light absorption layer is made of the same material as the first light absorption layer.

14. The method for preparing a micro LED device according to claim 7, wherein: After the second filling step, the method further comprises: A fifth light absorption layer is disposed on the second intermediate structure, wherein the fifth light absorption layer is used to partially absorb light of a third color emitted by the micro LED unit, and the third light absorption layer is made of the same material as the first light absorption layer.

15. The method for preparing a micro LED device according to claim 1, wherein: After each group of first through holes is filled with a photoluminescent material layer and a first light absorption layer, the method further includes: A first transparent cover plate is disposed on the first barrier layer, the photoluminescent material layer and the first light absorbing layer.

16. A micro LED device, wherein: The micro LED device comprises: A micro LED unit chip structure, comprising a micro LED chip, wherein the micro LED chip comprises a micro LED unit array, wherein each micro LED unit in the micro LED unit array comprises a first semiconductor layer on a light emitting side; A first barrier layer, which is disposed on the first semiconductor layer, the first barrier layer comprising a first through hole array, each first through hole in the first through hole array corresponds to a micro LED unit in the micro LED unit array, wherein the first through hole array comprises a plurality of groups of first through holes, each group of first through holes comprises at least two first through holes; A photoluminescent material layer and a first light absorbing layer, wherein the photoluminescent material layer and the first light absorbing layer are respectively filled in each group of first through holes, wherein the first light absorbing layer is used to partially absorb the light emitted by the micro LED unit, and the color of the light emitted by the micro LED unit is different from the color corresponding to the photoluminescent material layer.

17. The micro LED device according to claim 16, wherein: The micro LED device also includes a second barrier layer, which is arranged on the first barrier layer and aligned with the first barrier layer, and the second barrier layer includes a second through hole array, which is aligned with the first through hole array and located above the first through hole array, wherein the second through hole array includes multiple groups of second through holes corresponding to the multiple groups of first through holes, each group of second through holes includes at least two second through holes, and the number of second through holes in each group of second through holes is the same as the number of first through holes in each group of first through holes.

18. The micro LED device according to claim 17, wherein: Each group of first through holes includes two first through holes, the photoluminescent material layer includes a photoluminescent material of a fourth color, the photoluminescent material layer of the fourth color is filled in one first through hole in each group of first through holes, and the first light absorbing layer is filled in the first through hole in each group of first through holes that is not filled with the photoluminescent material layer, wherein the first light absorbing layer is used to partially absorb the light of a third color emitted by the micro LED unit, and white light is obtained by synthesizing the light of the fourth color and the light of the third color.

19. The micro LED device according to claim 18, wherein: Each group of second through holes includes two second through holes, and the micro LED device further includes at least one of a fourth filling portion and a fifth filling portion, wherein: The fourth filling part is filled in the second through hole above the first through hole filled with the photoluminescent material layer of the fourth color, wherein the fourth filling part includes a fourth filter layer that only allows light of the fourth color to pass through, a second light absorption layer for partially absorbing light of the third color, or a transparent material; The fifth filling part is filled in the second through hole above the first through hole filled with the first light absorbing layer, wherein the fifth filling part includes a second light absorbing layer for partially absorbing light of a third color, The second light absorption layer included in the fourth filling part and the fifth filling part is made of the same material as the first light absorption layer.

20. The micro LED device according to claim 19, wherein: The fourth color is yellow and the third color is blue.

21. The micro LED device according to claim 16, wherein: The micro LED device further includes an insulating layer, wherein the insulating layer is disposed on the first semiconductor layer, the first barrier layer is disposed on the insulating layer, and each first through hole in the first through hole array of the first barrier layer exposes the insulating layer.

22. The micro LED device according to claim 16, wherein: The micro LED device also includes a third light absorption layer, which is arranged on the first barrier layer, the photoluminescent material layer and the first light absorption layer, wherein the third light absorption layer is used to partially absorb the third color light emitted by the micro LED unit, and the third light absorption layer is made of the same material as the first light absorption layer.

23. The micro LED device according to claim 16, wherein: The micro LED device further includes a first transparent cover plate, which is disposed on the first barrier layer, the photoluminescent material layer and the first light absorbing layer.

24. The micro LED device according to claim 16, wherein: The micro LED chip structure further includes a driving chip, and a side of the micro LED chip opposite to the light emitting side is arranged on the driving chip. Alternatively, the micro LED chip structure further includes a driving chip and a flexible circuit board, the side of the micro LED chip opposite to the light emitting side is arranged on the driving chip to form a micro LED module, and the micro LED module is arranged on the flexible circuit board through the driving chip.

25. The micro LED device according to claim 17, wherein: The first semiconductor layer includes an N-GaN layer, the material of the first barrier layer and the material of the second barrier layer include visible light shielding materials, and the material of the first light absorption layer includes an organic dye, nano absorption particles or inorganic oxides for absorbing blue light.

26. A display device, wherein: The display device comprises the micro LED device according to any one of claims 16 to 25.

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