Miniature LED device preparation method, miniature LED device and display device

Abstract

The invention provides a miniature LED device preparation method, a miniature LED device and a display device. The method comprises the following steps: obtaining a transparent substrate and a micro LED chip structure; a first partition layer is arranged on the transparent substrate, so that the first partition layer comprises a plurality of groups of first through holes, and each group of first through holes comprises at least two first through holes; filling part of the first through holes in each group of first through holes with a first light absorption layer to obtain a first intermediate structure; a second partition layer is arranged on the first middle structure, the second partition layer comprises multiple sets of second through holes, and the second through holes in each set of second through holes correspond to the first through holes in the corresponding first through hole set; the second through holes, not corresponding to the first through holes filled with the first light absorption layers, in each set of second through holes are filled with photoluminescent material layers, and a first color conversion structure is obtained; and bonding one side, opposite to the transparent substrate, of the first color conversion structure with the light emitting side of the micro LED chip to obtain the micro LED device.

Description

Technical Field

[0001] The present disclosure relates to the technical field of semiconductor Micro LED, and in particular, to a method for preparing a Micro LED device, a Micro LED device and a display device. Background Art

[0002] Micro-LED is a comprehensive technology that integrates new display technology and light-emitting diode (LED) technology. It has the advantages of small size, high brightness, high resolution, and low power consumption. It is considered to be one of the most promising next-generation new display and light-emitting devices. Currently, Micro LED full-color display can be achieved in a variety of ways, one of which is the color conversion method. However, the full-color Micro LED device achieved by the color conversion method still has problems such as unsatisfactory display effects. Summary of the invention

[0003] The solution disclosed herein provides a method for preparing a micro LED device, a micro LED device, and a display device.

[0004] According to one aspect of an embodiment of the present disclosure, a method for preparing a micro LED device is provided, wherein the method comprises: obtaining a transparent substrate and a micro LED chip structure, wherein the micro LED chip structure comprises a micro LED chip, and the micro LED chip comprises a micro LED unit array composed of a plurality of micro LED units; arranging a first barrier layer on the transparent substrate, so that the first barrier layer comprises a first through hole array, and the arrangement of the first through hole array corresponds to the arrangement of the micro LED unit array, wherein the first through hole array comprises a plurality of groups of first through holes, and each group of first through holes comprises at least two first through holes; filling a first light absorbing layer in part of the first through holes in each group of first through holes to obtain a first intermediate structure, wherein the first light absorbing layer is used to partially absorb the micro The invention relates to a method for converting a micro-LED unit into light; providing a second barrier layer on the first intermediate structure, so that the second barrier layer includes a second through hole array, the second through hole array corresponds to the first through hole array, wherein the second through hole array includes a plurality of second through holes corresponding to the plurality of first through holes, and the second through holes in each group of second through holes correspond to the first through holes in the corresponding first through hole group; filling a photoluminescent material layer in the second through holes in each group of second through holes that do not correspond to the first through holes filled with the first light absorbing layer, to obtain a first color conversion structure, wherein the color of the light emitted by the micro-LED unit is different from the color corresponding to the photoluminescent material layer; bonding a side of the first color conversion structure opposite to the transparent substrate to the light emitting side of the micro-LED chip to obtain a micro-LED device.

[0005] Further, a first barrier layer is provided on the transparent substrate, so that the first barrier layer includes a first through hole array, the arrangement of the first through hole array corresponds to the arrangement of the micro LED unit array, wherein the first through hole array includes multiple groups of first through holes, and each group of first through holes includes at least two first through holes, including: a first barrier layer is provided on the transparent substrate and a first through hole array is opened on the first barrier layer, so that the arrangement of the first through hole array corresponds to the arrangement of the micro LED unit array, wherein the first through hole array includes multiple groups of first through holes, each group of first through holes includes three first through holes, and the three first through holes include a first first through hole, a second first through hole, and a third first through hole. A first light absorption layer is filled in part of the first through holes in each group of first through holes to obtain a first intermediate structure, wherein the first light absorption layer is used to partially absorb the light emitted by the micro LED unit, including: a first light absorption layer is filled in the third first through hole in each group of first through holes, wherein the first light absorption layer is used to partially absorb the light of the third color emitted by the micro LED unit. A second barrier layer is arranged on the first intermediate structure, so that the second barrier layer includes a second through hole array, the second through hole array corresponds to the first through hole array, wherein the second through hole array includes a plurality of groups of second through holes corresponding to the plurality of groups of first through holes, and the second through holes in each group of second through holes correspond to the first through holes in the corresponding first through hole group, comprising: a second barrier layer is arranged on the first intermediate structure and a second through hole array is opened on the second barrier layer, so that the second through hole array corresponds to the first through hole array, wherein the second through hole array includes a plurality of groups of second through holes corresponding to the plurality of groups of first through holes, and each group of second through holes includes a first second through hole aligned with the first first through hole, a second second through hole aligned with the second first through hole, and a third second through hole aligned with the third first through hole. The photoluminescent material layer includes a photoluminescent material layer of a first color and a photoluminescent material layer of a second color. The photoluminescent material layer is filled in the second through holes in each group of second through holes that do not correspond to the first through holes filled with the first light absorbing layer to obtain a first color conversion structure, wherein the color of the light emitted by the micro LED unit is different from the color corresponding to the photoluminescent material layer, comprising: filling the first second through hole in each group of second through holes with a photoluminescent material layer of a first color, and filling the second second through hole in each group of second through holes with a photoluminescent material layer of a second color, and synthesizing the light corresponding to the first color, the light corresponding to the second color, and the light corresponding to the third color to obtain white light.

[0006] Further, when the first light absorbing layer is filled in part of the first through holes in each group of first through holes, the method further includes: a first filling step, the first filling step including at least one of the following steps: filling a first filling portion in the first first through hole in each group of first through holes, the first filling portion including a first filter layer that only allows light of the first color to pass through, and a second light absorbing layer or a transparent material that partially absorbs light of the third color; filling a second filling portion in the second first through hole in each group of first through holes, the second filling portion including a second filter layer that only allows light of the second color to pass through, and a second light absorbing layer or a transparent material that partially absorbs light of the third color.

[0007] Furthermore, the first filling step further comprises: when there are unfilled first through holes in each group of first through holes, filling the unfilled first through holes with a transparent material.

[0008] Further, a first barrier layer is provided on the transparent substrate, so that the first barrier layer includes a first through hole array, the arrangement of the first through hole array corresponds to the arrangement of the micro LED unit array, wherein the first through hole array includes multiple groups of first through holes, and each group of first through holes includes at least two first through holes, including: a first barrier layer is provided on the transparent substrate and a first through hole array is opened on the first barrier layer, so that the arrangement of the first through hole array corresponds to the arrangement of the micro LED unit array, wherein the first through hole array includes multiple groups of first through holes, and each group of first through holes includes two first through holes. A first light absorption layer is filled in part of the first through holes in each group of first through holes to obtain a first intermediate structure, wherein the first light absorption layer is used to partially absorb the light emitted by the micro LED unit, including: a first light absorption layer is filled in one first through hole in each group of first through holes to obtain a first intermediate structure, wherein the first light absorption layer is used to partially absorb the light of the third color emitted by the micro LED unit. A second barrier layer is arranged on the first intermediate structure, so that the second barrier layer includes a second through hole array, the second through hole array corresponds to the first through hole array, wherein the second through hole array includes a plurality of groups of second through holes corresponding to the plurality of groups of first through holes, and the second through holes in each group of second through holes correspond to the first through holes in the corresponding first through hole group, comprising: a second barrier layer is arranged on the first intermediate structure and a second through hole array is opened on the second barrier layer, so that the second through hole array corresponds to the first through hole array, wherein the second through hole array includes a plurality of groups of second through holes corresponding to the plurality of groups of first through holes, and each group of second through holes includes two second through holes that are respectively aligned with two first through holes in the corresponding first through hole group. The photoluminescent material layer includes a photoluminescent material layer of a fourth color, and the photoluminescent material layer is filled in the second through holes in each group of second through holes that do not correspond to the first through holes filled with the first light absorbing layer to obtain a first color conversion structure, wherein the color of light emitted by the micro LED unit is different from the color corresponding to the photoluminescent material layer, including: filling the second through holes in each group of second through holes that do not correspond to the first through holes filled with the first light absorbing layer with a photoluminescent material layer of a fourth color, and synthesizing the light corresponding to the fourth color and the light of the third color to obtain white light.

[0009] Furthermore, when the first light absorbing layer is filled in part of the first through holes in each group of first through holes, the method further includes: filling a third filling portion in the first through holes in each group of first through holes that are not filled with the first light absorbing layer, wherein the third filling portion includes a third filter layer that only allows light of a fourth color to pass through, a second light absorbing layer for partially absorbing light of the third color, or a transparent material.

[0010] Furthermore, before the second barrier layer is disposed on the first intermediate structure, the method further includes: disposing a third light absorbing layer on the first intermediate structure, wherein the second light absorbing layer is used to partially absorb the light emitted by the micro LED unit. Disposing the second barrier layer on the first intermediate structure includes: disposing the second barrier layer on the third light absorbing layer.

[0011] Furthermore, when a photoluminescent material layer is filled in a second through hole in each group of second through holes that does not correspond to a first through hole filled with the first light absorbing layer, the method further includes: filling a fourth filling portion in a second through hole in each group of second through holes that corresponds to the first through hole filled with the first light absorbing layer, wherein the fourth filling portion includes a fourth light absorbing layer for partially absorbing light emitted by the micro LED unit, a photoluminescent material layer of a third color, or a transparent material.

[0012] Furthermore, before the first barrier layer is provided on the transparent substrate, the method further comprises: providing a fifth light absorbing layer on the transparent substrate, wherein the fifth light absorbing layer is used to partially absorb the light emitted by the micro LED unit. Providing the first barrier layer on the transparent substrate comprises: providing the first barrier layer on the fifth light absorbing layer.

[0013] Furthermore, after the photoluminescent material layer is filled in the second through holes in each group of second through holes that do not correspond to the first through holes filled with the first light absorbing layer, the method further includes: providing a first reflective layer on the second barrier layer and the photoluminescent material layer, wherein the first reflective layer is used to reflect light of a color corresponding to the photoluminescent material layer.

[0014] Furthermore, after the photoluminescent material layer is filled in the second through holes in each group of second through holes that do not correspond to the first through holes filled with the first light absorbing layer, the method further comprises: providing an insulating layer on the second barrier layer and the photoluminescent material layer. Bonding the side of the first color conversion structure opposite to the transparent substrate to the light emitting side of the micro LED chip comprises: bonding the insulating layer of the first color conversion structure to the light emitting side of the micro LED chip.

[0015] Furthermore, after bonding the side of the first color conversion structure opposite to the transparent substrate to the light emitting side of the micro LED chip, the method includes: removing the transparent substrate of the first color conversion structure to obtain a second color conversion structure from the first color conversion structure.

[0016] According to another aspect of the present disclosure, a micro LED device is also provided.

[0017] The micro LED device comprises a second color conversion structure and a micro LED chip structure, wherein the micro LED chip structure comprises a micro LED chip, wherein the micro LED chip comprises a micro LED unit array composed of a plurality of micro LED units, wherein the second color conversion structure comprises: a first barrier layer, wherein the first barrier layer comprises a first through hole array, wherein the arrangement of the first through hole array corresponds to the arrangement of the micro LED unit array, wherein the first through hole array comprises a plurality of groups of first through holes, wherein each group of first through holes comprises at least two first through holes; and a first light absorbing layer, wherein the first light absorbing layer is filled in a portion of the first through holes in each group of first through holes, wherein the first light absorbing layer is used to partially absorb The light emitted by the micro LED unit; a second barrier layer, the second barrier layer is arranged below the first barrier layer and the first light absorbing layer, the second barrier layer includes a second through hole array, the second through hole array corresponds to the first through hole array, wherein the second through hole array includes multiple groups of second through holes corresponding to the multiple groups of first through holes, and the second through holes in each group of second through holes correspond to the first through holes in the corresponding first through hole group; a photoluminescent material layer, the photoluminescent material layer is filled in the second through holes in each group of second through holes that do not correspond to the first through holes filled with the first light absorbing layer, and the color of the light emitted by the micro LED unit is different from the color corresponding to the photoluminescent material layer. The second barrier layer and the photoluminescent material layer of the second color conversion structure are arranged on the light emitting side of the micro LED chip.

[0018] Further, each group of first through holes includes three first through holes, and the three first through holes include a first first through hole, a second first through hole and a third first through hole. The first light absorption layer is filled in the third first through hole in each group of first through holes, and the first light absorption layer is used to partially absorb the light of the third color emitted by the micro LED unit. Each group of second through holes includes a first second through hole aligned with the first first through hole, a second second through hole aligned with the second first through hole, and a third second through hole aligned with the third first through hole. The photoluminescent material layer includes a photoluminescent material layer of a first color and a photoluminescent material layer of a second color. The photoluminescent material layer of the first color is filled in the first second through hole in each group of second through holes, and the photoluminescent material layer of the second color is filled in the second second through hole in each group of second through holes. The light corresponding to the first color, the light corresponding to the second color, and the light corresponding to the third color are synthesized to obtain white light.

[0019] Further, the second color conversion structure also includes at least one of a first filling part and a second filling part, wherein: the first filling part is used to fill the first first through hole in each group of first through holes, and the first filling part includes a first filter layer that only allows light of the first color to pass through, and a second light absorbing layer or a transparent material that is used to partially absorb light of a third color; the second filling part is used to fill the second first through hole in each group of first through holes, and the second filling part includes a second filter layer that only allows light of the second color to pass through, and a second light absorbing layer or a transparent material that is used to partially absorb light of the third color.

[0020] Further, when there is an unfilled first through hole in each group of first through holes, the second color conversion structure further includes a transparent material, and the transparent material is filled in the unfilled first through hole.

[0021] Further, the first color is red, the second color is green and the third color is blue.

[0022] Further, each group of first through holes includes two first through holes, the first light absorption layer is filled in one first through hole in each group of first through holes, the first light absorption layer is used to partially absorb the third color light emitted by the micro LED unit, each group of second through holes includes two second through holes respectively aligned with the two first through holes in the corresponding first through hole group, the photoluminescent material layer includes a fourth color photoluminescent material layer, the fourth color photoluminescent material layer is filled in the second through holes in each group of second through holes that do not correspond to the first through holes filled with the first light absorption layer, and the light corresponding to the fourth color and the light of the third color are synthesized to obtain white light.

[0023] Furthermore, the second color conversion structure also includes a third filling part, which is used to fill the first through holes in each group of first through holes that are not filled with the first light absorbing layer, and the third filling part includes a third filter layer that only allows light of the fourth color to pass through, a second light absorbing layer for partially absorbing the light of the third color, or a transparent material.

[0024] Further, the fourth color is yellow and the third color is blue.

[0025] Furthermore, the second color conversion structure also includes a third light absorbing layer, which is arranged below the first barrier layer and the first light absorbing layer, and is used to partially absorb the light emitted by the micro LED unit, and the second barrier layer is arranged below the third light absorbing layer.

[0026] Furthermore, the second color conversion structure also includes a fourth filling portion, which is filled in the second through hole in each group of second through holes corresponding to the first through hole filled with the first light absorption layer, and the fourth filling portion includes a fourth light absorption layer, a photoluminescent material layer of a third color, or a transparent material for partially absorbing the light emitted by the micro LED unit.

[0027] Furthermore, the second color conversion structure further includes a fifth light absorbing layer, wherein the fifth light absorbing layer is disposed on the first barrier layer, and the fifth light absorbing layer is used to partially absorb the light emitted by the micro LED unit.

[0028] Furthermore, the second color conversion structure further includes a first reflective layer, which is disposed below the second barrier layer and the photoluminescent material layer, and is used to reflect light of a color corresponding to the photoluminescent material layer.

[0029] Furthermore, the second color conversion structure further includes an insulating layer, which is disposed below the second barrier layer and the photoluminescent material layer, and the insulating layer of the second color conversion structure is disposed on the light emitting side of the micro LED chip.

[0030] Furthermore, the micro LED chip structure also includes a driver chip, and the side of the micro LED chip opposite to the light emitting side is arranged on the driver chip, or the micro LED chip structure also includes a driver chip and a flexible circuit board, and the side of the micro LED chip opposite to the light emitting side is arranged on the driver chip to form a micro LED module, and the micro LED module is arranged on the flexible circuit board through the driver chip.

[0031] Further, the material of the first barrier layer and the material of the second barrier layer include visible light shielding materials, the material of the first color photoluminescent material layer and the material of the second color photoluminescent material layer include at least one of II-VI group quantum dots, III-V group quantum dots, perovskite quantum dots and carbon quantum dots, the material of the first light absorption layer and the material of the second light absorption layer include organic dyes, nano absorption particles or inorganic oxides for absorbing blue light, and the material of the first filter layer and the material of the second filter layer include organic dyes, nano absorption particles or inorganic oxides.

[0032] According to another aspect of the embodiments of the present disclosure, a display device is provided, wherein the display device comprises a micro LED device prepared by the above method.

[0033] By applying the technical solution disclosed in the present invention, a transparent substrate and a micro LED chip are obtained, a first barrier layer is arranged on the transparent substrate, each group of first through holes included in the first barrier layer includes at least two first through holes, and then a first light absorption layer is filled in part of the first through holes in each group of first through holes, and then a second barrier layer is arranged on the first barrier layer and the first light absorption layer, each group of second through holes included in the second barrier layer includes second through holes corresponding to the first through holes in the corresponding first through hole group, and then a photoluminescent material layer is filled in the second through holes in each group of second through holes that do not correspond to the first through holes filled with the first light absorption layer to form a first color conversion structure, and the first color conversion structure is bonded to the light-emitting side of the micro LED chip to form a micro LED device.

[0034] In the micro LED device, the light emitted by the micro LED unit of the micro LED chip excites the material in the photoluminescent material layer to emit light of a color different from that of the light emitted by the micro LED unit. Due to the existence of the corresponding first through hole and the second through hole, the first light absorption layer filled in the first through hole corresponding to the second through hole can partially absorb the light emitted by the micro LED unit, thereby reducing the light overflow caused by the light emitted by the micro LED unit directly emitted from the micro LED device, thereby reducing the color deviation and poor color purity caused by the light overflow, thereby improving the balance of light of different colors emitted from the micro LED device, improving the color purity of the micro LED, and further improving the display effect of the micro LED device. BRIEF DESCRIPTION OF THE DRAWINGS

[0035] By reading the detailed description below with reference to the accompanying drawings, the above and other purposes, features and advantages of the exemplary embodiments of the present disclosure will become readily understood. In the accompanying drawings, several embodiments of the present disclosure are shown in an exemplary and non-limiting manner, and the same or corresponding reference numerals represent the same or corresponding parts, wherein:

[0036] Figure 1 is a flow chart showing a method for preparing a micro LED device according to one embodiment of the present disclosure;

[0037] Figures 2 to 12 is a schematic diagram showing a preparation process flow of a method for preparing a micro LED device according to an embodiment of the present disclosure. DETAILED DESCRIPTION

[0038] It should be noted that, in the absence of conflict, the embodiments and features in the embodiments of the present application can be combined with each other. The present disclosure will be described in detail below with reference to the accompanying drawings and in combination with the embodiments.

[0039] It should be noted that the following detailed descriptions are illustrative and are intended to provide further explanation of the present application. Unless otherwise specified, all technical and scientific terms used herein have the same meanings as those commonly understood by those skilled in the art to which the present application belongs.

[0040] For ease of description, spatially relative terms such as "above", "above", "on the upper surface of", "above", etc. may be used herein to describe the spatial positional relationship between a device or feature and other devices or features as shown in the figure. It should be understood that spatially relative terms are intended to include different orientations of the device in use or operation in addition to the orientation described in the figure. For example, if the device in the accompanying drawings is inverted, the device described as "above other devices or structures" or "above other devices or structures" will be positioned as "below other devices or structures" or "below other devices or structures". Thus, the exemplary term "above" may include both "above" and "below". The device may also be positioned in other different ways, rotated 90 degrees or in other orientations, and the spatially relative descriptions used herein are interpreted accordingly.

[0041] Now, exemplary embodiments according to the present disclosure will be described in more detail with reference to the accompanying drawings. However, these exemplary embodiments can be implemented in a variety of different forms and should not be construed as being limited to the embodiments described herein. It should be understood that these embodiments are provided to make the disclosure of the present application thorough and complete, and to fully convey the concepts of these exemplary embodiments to those of ordinary skill in the art. In the accompanying drawings, for clarity, the thickness of the layers and regions is enlarged, and the same reference numerals are used to represent the same devices, and thus their descriptions will be omitted.

[0042] The present invention provides a method for preparing a micro LED device. Figures 1 to 12 , Figure 1 is a flow chart showing a method for preparing a micro LED device according to one embodiment of the present disclosure; Figures 2 to 12 is a schematic diagram showing a preparation process flow of a method for preparing a micro LED device according to an embodiment of the present disclosure.

[0043] like Figure 1 As shown, the method for preparing a micro LED device includes the following steps S101-S106.

[0044] Step S101: Acquire a transparent substrate and a micro LED chip structure, wherein the micro LED chip structure comprises a micro LED chip, and the micro LED chip comprises a micro LED unit array composed of a plurality of micro LED units.

[0045] Step S102: Disposing a first barrier layer on the transparent substrate, so that the first barrier layer includes a first through hole array, the arrangement of the first through hole array corresponds to the arrangement of the micro LED unit array, wherein the first through hole array includes multiple groups of first through holes, and each group of first through holes includes at least two first through holes.

[0046] Step S103: Filling a first light absorption layer in part of the first through holes in each group of first through holes to obtain a first intermediate structure, wherein the first light absorption layer is used to partially absorb the light emitted by the micro LED unit.

[0047] Step S104: a second barrier layer is disposed on the first intermediate structure, so that the second barrier layer includes a second through hole array, the second through hole array corresponds to the first through hole array, wherein the second through hole array includes a plurality of groups of second through holes corresponding to the plurality of groups of first through holes, and the second through holes in each group of second through holes correspond to the first through holes in the corresponding first through hole group.

[0048] Step S105: Filling a photoluminescent material layer in the second through holes in each group of second through holes that do not correspond to the first through holes filled with the first light absorbing layer to obtain a first color conversion structure, wherein the color of light emitted by the micro LED unit is different from the color corresponding to the photoluminescent material layer.

[0049] Step S106: Bonding the side of the first color conversion structure opposite to the transparent substrate to the light emitting side of the micro LED chip to obtain a micro LED device.

[0050] According to the technical solution, a transparent substrate and a micro LED chip can be obtained, a first barrier layer is arranged on the transparent substrate, each group of first through holes included in the first barrier layer includes at least two first through holes, and then a first light absorption layer is filled in part of the first through holes in each group of first through holes, and then a second barrier layer is arranged on the first barrier layer and the first light absorption layer, each group of second through holes included in the second barrier layer includes second through holes corresponding to the first through holes in the corresponding first through hole group, and then a photoluminescent material layer is filled in the second through holes in each group of second through holes that do not correspond to the first through holes filled with the first light absorption layer to form a first color conversion structure, and the first color conversion structure is bonded to the light-emitting side of the micro LED chip to form a micro LED device.

[0051] In the micro LED device, the light emitted by the micro LED unit of the micro LED chip excites the material in the photoluminescent material layer to emit light of a color different from that of the light emitted by the micro LED unit. Due to the existence of the corresponding first through hole and the second through hole, the first light absorption layer filled in the first through hole corresponding to the second through hole can partially absorb the light emitted by the micro LED unit, thereby reducing the light overflow caused by the light emitted by the micro LED unit directly emitted from the micro LED device, thereby reducing the color deviation and poor color purity caused by the light overflow, thereby improving the balance of light of different colors emitted from the micro LED device, improving the color purity of the micro LED, and further improving the display effect of the micro LED device.

[0052] In step S101, a transparent substrate and a micro LED chip structure may be obtained, wherein the micro LED chip structure includes a micro LED chip, and the micro LED chip includes a micro LED unit array composed of a plurality of micro LED units.

[0053] According to an embodiment of the present disclosure, a transparent substrate and a micro LED chip structure may be first obtained. The transparent substrate may include any applicable substrate such as a glass substrate, a polyimide substrate or a sapphire substrate. The micro LED chip structure includes a micro LED chip, and the micro LED chip includes a micro LED unit array for emitting light. Among them, the micro LED chip may be any micro LED chip suitable for preparing a micro LED device. For example, the structure of the micro LED chip may include a face-up structure, a flip-chip structure or a vertical structure, etc., which are not limited here. Each micro LED unit in the micro LED unit array may include an exposed first semiconductor layer on its light-emitting side. Depending on the type of micro LED device, in some embodiments, the first semiconductor layer may include an N-GaN layer; in other embodiments, the first semiconductor layer may include a P-GaN layer. It is worth noting that the micro LED chip structure may also be obtained in any step before the subsequent step of using the micro LED chip structure.

[0054] Reference Figure 2-Figure 12 ,in Figure 2 FIG. 1 shows a side view of a transparent substrate 101 according to an embodiment of the present disclosure. Figure 2 As shown, the transparent substrate 101 may be, for example, a glass substrate.

[0055] Reference Figure 2-Figure 12 ,in Figure 3 FIG. 4 shows a side view of a micro LED chip structure according to an embodiment of the present disclosure. Figure 3As shown, the micro LED chip structure includes a micro LED chip 20, and the micro LED chip 20 includes a micro LED unit array 201 composed of micro LED units 2011. Each micro LED unit 2011 in the micro LED unit array 201 includes a first semiconductor layer 20111 such as an N-GaN layer on the light emitting side. Figure 3 As shown, the first semiconductor layer 20111 is common to each micro LED unit 2011 in the micro LED unit array 201 , that is, the first semiconductor layer 20111 is integrated in the micro LED chip 20 .

[0056] In step S102, a first barrier layer may be provided on the transparent substrate, so that the first barrier layer includes a first through hole array, the arrangement of the first through hole array corresponds to the arrangement of the micro LED unit array, wherein the first through hole array includes a plurality of groups of first through holes, and each group of first through holes includes at least two first through holes.

[0057] According to an embodiment of the present disclosure, after obtaining a transparent substrate, a first barrier layer can be set on the transparent substrate. The material of the first barrier layer may include a visible light shielding material. The visible light shielding material may include, for example, a matte material such as black photoresist and a reflective material such as a metal layer.

[0058] According to an embodiment of the first barrier layer disclosed in the present invention, a first barrier layer is disposed on a transparent substrate, so that the first barrier layer includes a first through hole array, and the arrangement of the first through hole array corresponds to the arrangement of the micro LED unit array, wherein the first through hole array includes multiple groups of first through holes, and each group of first through holes includes at least two first through holes, comprising: a first barrier layer is disposed on a transparent substrate and a first through hole array is opened on the first barrier layer, so that the arrangement of the first through hole array corresponds to the arrangement of the micro LED unit array, wherein the first through hole array includes multiple groups of first through holes, each group of first through holes includes three first through holes, and the three first through holes include a first first through hole, a second first through hole and a third first through hole.

[0059] According to another embodiment of the first barrier layer disclosed in the present invention, a first barrier layer is disposed on a transparent substrate, so that the first barrier layer includes a first through hole array, and the arrangement of the first through hole array corresponds to the arrangement of the micro LED unit array, wherein the first through hole array includes multiple groups of first through holes, and each group of first through holes includes at least two first through holes, comprising: a first barrier layer is disposed on a transparent substrate and a first through hole array is opened on the first barrier layer, so that the arrangement of the first through hole array corresponds to the arrangement of the micro LED unit array, wherein the first through hole array includes multiple groups of first through holes, and each group of first through holes includes two first through holes.

[0060] According to an embodiment of the present disclosure, before the first barrier layer is provided on the transparent substrate, the method further includes: providing a fifth light absorbing layer on the transparent substrate, the fifth light absorbing layer being used to partially absorb the light emitted by the micro LED unit. Providing the first barrier layer on the transparent substrate includes: providing the first barrier layer on the fifth light absorbing layer. The material of the fifth light absorbing layer includes an organic dye, nano absorption particles or inorganic oxide for absorbing blue light, for example, it may be a zinc oxide nanoparticle photoresist.

[0061] Reference Figure 2-Figure 12 ,in Figure 4 FIG. 1 shows a side view of a first barrier layer 102 disposed on a transparent substrate 101. Figure 4 As shown, the first barrier layer 102 may be, for example, a black photoresist layer, so a black photoresist layer may be coated on a transparent substrate 101 such as a glass substrate by spin coating, and then, for example, a first through hole array 1020 may be opened on the black photoresist layer by photolithography, so that the arrangement of the first through hole array 1020 corresponds to the arrangement of the micro LED unit array 201 to be used later and the transparent substrate 101 is exposed, wherein the first through hole array 1020 includes a plurality of groups of first through holes, each group of first through holes includes a first first through hole 1021, a second first through hole 1022 and a third first through hole 1023. For clarity and simplicity, Figure 4 Only a group of first through holes included in the first through hole array 1020 is shown, and the group of first through holes includes a first first through hole 1021, a second first through hole 1022 and a third first through hole 1023. Figure 4 The number of groups of first through holes and the number of first through holes in each group of first through holes shown in the figure are only for illustration and are not limited herein. The first barrier layer 102 such as a black photoresist layer can make the screen appear black when the display device is powered off or turned off.

[0062] In step S103 , a first light absorption layer may be filled in part of the first through holes in each group of first through holes to obtain a first intermediate structure, wherein the first light absorption layer is used to partially absorb the light emitted by the micro LED unit.

[0063] According to an embodiment of the present disclosure, after obtaining the above-mentioned first through hole array, a first light absorption layer can be filled for the first through hole array. The first light absorption layer can partially absorb the light emitted by the micro LED unit, so that a part of the light emitted by the micro LED unit is absorbed after passing through the first light absorption layer.

[0064] Referring to an embodiment of the first barrier layer in step S102, according to an embodiment of the present disclosure for filling the first through holes, a first light absorption layer is filled in part of the first through holes in each group of first through holes to obtain a first intermediate structure, wherein the first light absorption layer is used to partially absorb the light emitted by the micro LED unit, including: filling the first light absorption layer in the third first through hole in each group of first through holes, wherein the first light absorption layer is used to partially absorb the third color of light emitted by the micro LED unit.

[0065] Further, when the first light absorbing layer is filled in part of the first through holes in each group of first through holes, the method further includes: a first filling step, the first filling step including at least one of the following steps: filling a first filling portion in the first first through hole in each group of first through holes, the first filling portion including a first filter layer that only allows light of the first color to pass through, and a second light absorbing layer or a transparent material that partially absorbs light of the third color; filling a second filling portion in the second first through hole in each group of first through holes, the second filling portion including a second filter layer that only allows light of the second color to pass through, and a second light absorbing layer or a transparent material that partially absorbs light of the third color.

[0066] Furthermore, the first filling step further comprises: when there are unfilled first through holes in each group of first through holes, filling the unfilled first through holes with a transparent material.

[0067] In this embodiment, the light of the first color refers to the light of the wavelength range corresponding to the first color, the light of the second color refers to the light of the wavelength range corresponding to the second color, and the light of the third color refers to the light of the wavelength range corresponding to the third color. The first color, the second color and the third color can be three primary colors, for example, the first color is red, the second color is green and the third color is blue. The material of the first light absorption layer and the material of the second light absorption layer include organic dyes, nano absorption particles or inorganic oxides for absorbing blue light, and the material of the first light absorption layer and the material of the first light absorption layer can be the same, for example, zinc oxide nanoparticle photoresist. The material of the first filter layer and the material of the second filter layer include organic dyes, nano absorption particles or inorganic oxides.

[0068] Referring to another embodiment of the first barrier layer in step S102, according to another embodiment of the present disclosure for filling the first through holes, a first light absorption layer is filled in part of the first through holes in each group of first through holes to obtain a first intermediate structure, wherein the first light absorption layer is used to partially absorb the light emitted by the micro LED unit, including: filling a first light absorption layer in one first through hole in each group of first through holes to obtain a first intermediate structure, wherein the first light absorption layer is used to partially absorb the third color of light emitted by the micro LED unit.

[0069] Furthermore, when the first light absorbing layer is filled in part of the first through holes in each group of first through holes, the method further includes: filling a third filling portion in the first through holes in each group of first through holes that are not filled with the first light absorbing layer, wherein the third filling portion includes a third filter layer that only allows light of a fourth color to pass through, a second light absorbing layer for partially absorbing light of the third color, or a transparent material.

[0070] In this embodiment, the fourth color of light refers to light in a wavelength range corresponding to the fourth color, the fourth color is yellow light and the third color is blue, the material of the first light absorption layer and the material of the second light absorption layer include organic dyes, nano absorption particles or inorganic oxides for absorbing blue light, the material of the first light absorption layer and the material of the second light absorption layer can be the same, for example, zinc oxide nanoparticle photoresist. The material of the third filter layer includes organic dyes, nano absorption particles or inorganic oxides.

[0071] Reference Figure 2-Figure 12 ,in Figure 5 A side view schematic diagram of the first light absorbing layer and the filling portion filled in each group of first through holes is shown. Figure 4 ,like Figure 5 As shown, a first filling portion is filled in the first through hole 1021 in each group of first through holes, and the first filling portion may include a first filter layer 1031 that only allows light of a first color, such as red, to pass through; a second filling portion is filled in the second through hole 1022 in each group of first through holes, and the second filling portion may include a second filter layer 1032 that only allows light of a second color, such as green, to pass through; a first light absorption layer 1033 is filled in the third through hole 1023 in each group of first through holes, and the first light absorption layer 1033 is used to partially absorb light of a third color, such as blue, to obtain the following: Figure 5 The first intermediate structure 30 is shown. It should be noted that in other embodiments, when there are unfilled first through holes in each group of first through holes, a transparent material may be filled in the unfilled first through holes to support the portion above the corresponding first through holes in the subsequent preparation process, and the transparent material may be any suitable material such as a transparent resin.

[0072] In step S104, a second barrier layer may be provided on the first intermediate structure, so that the second barrier layer includes a second through hole array, the second through hole array corresponds to the first through hole array, wherein the second through hole array includes a plurality of groups of second through holes corresponding to the plurality of groups of first through holes, and the second through holes in each group of second through holes correspond to the first through holes in the corresponding first through hole group.

[0073] According to an embodiment of the present disclosure, after preparing the first barrier layer, a second barrier layer may be provided on the first barrier layer. The second barrier layer may function as a grid, and the interior of the grid may be filled with a corresponding material. In some embodiments, the second barrier layer may include a visible light shielding material, which may include, for example, a matte material such as black photoresist, or a reflective material such as a metal layer.

[0074] Referring to an embodiment of the first barrier layer in step S102 and an embodiment of filling the first through hole in step S103, according to an embodiment of the second barrier layer of the present disclosure, a second barrier layer is disposed on the first intermediate structure so that the second barrier layer includes a second through hole array, the second through hole array corresponds to the first through hole array, wherein the second through hole array includes a plurality of groups of second through holes corresponding to the plurality of groups of first through holes, and the second through holes in each group of second through holes correspond to the first through holes in the corresponding first through hole group, comprising: disposing a second barrier layer on the first intermediate structure and opening a second through hole array on the second barrier layer, so that the second through hole array corresponds to the first through hole array, wherein the second through hole array includes a plurality of groups of second through holes corresponding to the plurality of groups of first through holes, and each group of second through holes includes a first second through hole aligned with the first first through hole, a second second through hole aligned with the second first through hole, and a third second through hole aligned with the third first through hole.

[0075] Referring to another embodiment of the first barrier layer in step S102 and another embodiment of filling the first through hole in step S103, according to another embodiment of the second barrier layer of the present disclosure, a second barrier layer is arranged on the first intermediate structure so that the second barrier layer includes a second through hole array, the second through hole array corresponds to the first through hole array, wherein the second through hole array includes a plurality of groups of second through holes corresponding to the plurality of groups of first through holes, and the second through holes in each group of second through holes correspond to the first through holes in the corresponding first through hole group, comprising: arranging a second barrier layer on the first intermediate structure and opening a second through hole array on the second barrier layer, so that the second through hole array corresponds to the first through hole array, wherein the second through hole array includes a plurality of groups of second through holes corresponding to the plurality of groups of first through holes, and each group of second through holes includes two second through holes respectively aligned with two first through holes in the corresponding first through hole group.

[0076] According to an embodiment of the present disclosure, before the second barrier layer is disposed on the first intermediate structure, the method further includes: disposing a third light absorbing layer on the first intermediate structure, the third light absorbing layer being used to partially absorb the light emitted by the micro LED unit. Disposing the second barrier layer on the first intermediate structure includes: disposing the second barrier layer on the third light absorbing layer.

[0077] Reference Figure 2-Figure 12 ,in Figure 6 FIG. 4 shows a side view of a third light absorbing layer 104 disposed on the first intermediate structure 30. Figure 6 As shown, a third light absorption layer 104 is disposed on the first intermediate structure 30. The third light absorption layer 104 is used to partially absorb, for example, blue light emitted by the micro LED unit. The material of the third light absorption layer 104 includes an organic dye, nano absorption particles or inorganic oxides for absorbing blue light. The material of the third light absorption layer 104 can be the same as the material of the first light absorption layer 1033 and the material of the second light absorption layer, for example, zinc oxide nanoparticle photoresist.

[0078] Reference Figure 2-Figure 12 ,in Figure 7 FIG. 1 shows a side view schematic diagram of a second barrier layer 105 disposed on the third light absorbing layer 104. Figure 7 As shown, the second barrier layer 105 may be, for example, a black photoresist layer, so the black photoresist layer may be coated on the third light absorbing layer 104 by spin coating, and then, for example, a second through hole array 1050 may be opened on the black photoresist layer by photolithography, so that the second through hole array 1050 is aligned with the first through hole array 1020, and the third through hole array 1050 exposes the third light absorbing layer 104. The second through hole array 1050 includes a plurality of groups of second through holes corresponding to the plurality of groups of first through holes, and each group of second through holes includes a first second through hole 1051 aligned with the first first through hole 1021, a second second through hole 1052 aligned with the second first through hole 1022, and a third second through hole 1053 aligned with the third first through hole 1023, so as to obtain the following: Figure 7 The structure shown. Figure 7 The number of groups of second through holes and the number of second through holes in each group of second through holes shown in the figure are merely schematic, and are not limited here as long as the corresponding relationship between the first through holes and the second through holes described above is followed.

[0079] In step S105, a photoluminescent material layer may be filled in the second through holes in each group of second through holes that do not correspond to the first through holes filled with the first light absorbing layer, to obtain a first color conversion structure, wherein the color of the light emitted by the micro LED unit is different from the color corresponding to the photoluminescent material layer.

[0080] According to an embodiment of the present disclosure, after obtaining the second through hole array, a photoluminescent material layer may be filled into the second through hole array.

[0081] Referring to an embodiment of the first barrier layer in step S102, an embodiment of the first through hole filling in step S103, and an embodiment of the second barrier layer in step S104, according to an embodiment of the filled photoluminescent material layer of the present disclosure, the photoluminescent material layer includes a photoluminescent material layer of a first color and a photoluminescent material layer of a second color, and the photoluminescent material layer is filled in the second through holes in each group of second through holes that do not correspond to the first through holes filled with the first light absorption layer to obtain a first color conversion structure, wherein the color of the light emitted by the micro LED unit is different from the color corresponding to the photoluminescent material layer, comprising: filling the first second through hole in each group of second through holes with the photoluminescent material layer of the first color, and filling the second second through hole in each group of second through holes with the photoluminescent material layer of the second color, and synthesizing the light corresponding to the first color, the light corresponding to the second color, and the light corresponding to the third color to obtain white light.

[0082] In this embodiment, the light of the first color refers to the light of the wavelength range corresponding to the first color, the light of the second color refers to the light of the wavelength range corresponding to the second color, and the light of the third color refers to the light of the wavelength range corresponding to the third color. The first color, the second color and the third color may be three primary colors, for example, the first color is red, the second color is green and the third color is blue. The material of the photoluminescent material layer of the first color and the material of the photoluminescent material layer of the second color include at least one of II-VI group quantum dots, III-V group quantum dots, perovskite quantum dots and carbon quantum dots.

[0083] Referring to another embodiment of the first barrier layer in step S102, another embodiment of the first through hole filling in step S103, and another embodiment of the second barrier layer in step S104, according to another embodiment of the filled photoluminescent material layer of the present disclosure, the photoluminescent material layer includes a photoluminescent material layer of a fourth color, and the photoluminescent material layer is filled in the second through holes in each group of second through holes that do not correspond to the first through holes filled with the first light absorbing layer to obtain a first color conversion structure, wherein the color of the light emitted by the micro LED unit is different from the color corresponding to the photoluminescent material layer, including: filling the photoluminescent material layer of the fourth color in the second through holes in each group of second through holes that do not correspond to the first through holes filled with the first light absorbing layer, and synthesizing the light corresponding to the fourth color and the light of the third color to obtain white light.

[0084] In this embodiment, the light of the fourth color refers to light of a wavelength range corresponding to the fourth color, the fourth color is yellow light and the third color is blue. The material of the photoluminescent material layer of the fourth color may include at least one of II-VI group quantum dots, III-V group quantum dots, perovskite quantum dots and carbon quantum dots.

[0085] According to an embodiment of the present disclosure, when a photoluminescent material layer is filled in a second through hole in each group of second through holes that does not correspond to a first through hole filled with a first light absorbing layer, the method further includes: filling a fourth filling portion in a second through hole in each group of second through holes that corresponds to a first through hole filled with a first light absorbing layer, wherein the fourth filling portion includes a fourth light absorbing layer for partially absorbing light emitted by the micro LED unit, a photoluminescent material layer of a third color, or a transparent material.

[0086] According to an embodiment of the present disclosure, after the photoluminescent material layer is filled in the second through holes in each group of second through holes that do not correspond to the first through holes filled with the first light absorbing layer, the method further includes: arranging a first reflective layer on the second barrier layer and the photoluminescent material layer, the first reflective layer being used to reflect light of a color corresponding to the photoluminescent material layer. The first reflective layer may include a distributed Bragg reflector film for reflecting light of a color corresponding to the photoluminescent material layer, and the first reflective layer may be, for example, a distributed Bragg reflector film formed by alternately stacking silicon dioxide layers and titanium dioxide layers, and may also include any material layer for reflecting light of a color corresponding to the photoluminescent material layer.

[0087] According to an embodiment of the present disclosure, after filling the photoluminescent material layer in the second through holes in each group of second through holes that do not correspond to the first through holes filled with the first light absorbing layer, the method further includes: providing an insulating layer on the second barrier layer and the photoluminescent material layer.

[0088] Reference Figure 2-Figure 12 ,in Figure 8 A schematic side view of a photoluminescent material layer filled in a second through hole in each group of second through holes that does not correspond to a first through hole filled with a first light absorbing layer is shown. Figure 7 ,like Figure 8 As shown, the first second through hole 1051 in each group of second through holes is filled with a first color photoluminescent material layer 1061, such as red, and the second second through hole 1052 in each group of second through holes is filled with a second color photoluminescent material layer 1062, such as green.

[0089] Reference Figure 2-Figure 12 ,in Fig. 9A schematic side view of a fourth filling portion filled in a second through hole corresponding to a first through hole filled with a first light absorbing layer in each group of second through holes is shown. Figure 7 and Figure 8 ,like Fig. 9 As shown, the fourth filling part is, for example, a fourth light absorbing layer 1063, and the fourth light absorbing layer 1063 for absorbing, for example, blue light is filled in the third second through hole 1053 aligned with the third first through hole 1023. The material of the fourth light absorbing layer 1063 includes an organic dye, nano absorption particles or inorganic oxide for absorbing blue light, and the material of the fourth light absorbing layer 1063 can be the same as the material of the first light absorbing layer 1033, the material of the second light absorbing layer and the material of the third light absorbing layer 104, for example, zinc oxide nanoparticle photoresist. It is worth noting that the above filling order of the first color photoluminescent material layer 1061, the second color photoluminescent material layer 1062 and the fourth light absorbing layer 1063 is only exemplary and is not limited here. The filling order of the first color photoluminescent material layer 1061, the second color photoluminescent material layer 1062 and the fourth light absorbing layer 1063 can be arbitrarily adjusted according to the actual preparation conditions such as specific processes and equipment. The fourth filling portion may further include a photoluminescent material layer of a third color, such as blue, so that the light of a third color, such as blue light, emitted by the micro LED unit excites the photoluminescent material layer of the third color to emit light of a third color, such as blue light.

[0090] Reference Figure 2-Figure 12 ,in Fig.10 FIG. 4 is a side view schematic diagram of an insulating layer disposed on the second barrier layer and the photoluminescent material layer. Fig.10 As shown, a plasma enhanced chemical vapor deposition (PECVD) method can be used to deposit an insulating layer 107 such as a silicon dioxide layer on the second barrier layer 105, the first color photoluminescent material layer 1061, the second color photoluminescent material layer 1062 and the fourth light absorption layer 1063 to obtain a Fig.10 The first color conversion structure 10 shown. Of course, the insulating layer may also include any other applicable materials, such as any applicable polymer organic materials and inorganic oxides, and any applicable preparation process may be used to prepare the insulating layer for different materials. The insulating layer is used to protect other parts of the first color conversion structure, and can be used as a surface layer of the first color conversion structure to make the surface of the first color conversion structure smoother, thereby facilitating the subsequent bonding of the first color conversion structure with the micro LED chip.

[0091] In step S106, the side of the first color conversion structure opposite to the transparent substrate may be bonded to the light emitting side of the micro LED chip to obtain a micro LED device.

[0092] According to an embodiment of the present disclosure, after obtaining the first color conversion structure, the side of the first color conversion structure opposite to the transparent substrate can be bonded to the light emitting side of the micro LED chip to obtain a micro LED device.

[0093] Furthermore, bonding the side of the first color conversion structure opposite to the transparent substrate to the light emitting side of the micro LED chip includes: bonding an insulating layer of the first color conversion structure to the light emitting side of the micro LED chip.

[0094] Furthermore, each micro LED unit in the micro LED unit array includes a first semiconductor layer on the light emitting side, and bonding the insulating layer of the first color conversion structure to the light emitting side of the micro LED chip includes: bonding the insulating layer of the first color conversion structure to the first semiconductor layer.

[0095] According to an embodiment of the present disclosure, after bonding the side of the first color conversion structure opposite to the transparent substrate to the light-emitting side of the micro LED chip, the method includes: removing the transparent substrate of the first color conversion structure to obtain a second color conversion structure from the first color conversion structure.

[0096] According to an embodiment of the present disclosure, the micro LED chip structure also includes a driving chip, and the side of the micro LED chip opposite to the light emitting side is arranged on the driving chip, or the micro LED chip structure also includes a driving chip and a flexible circuit board, and the side of the micro LED chip opposite to the light emitting side is arranged on the driving chip to form a micro LED module, and the micro LED module is arranged on the flexible circuit board through the driving chip.

[0097] Reference Figure 2-Figure 12 ,in Fig.11 FIG. 4 shows a side view of bonding the first color conversion structure 10 to the micro LED chip 20 according to one embodiment of the present disclosure. Fig.11 As shown, the insulating layer 107 of the first color conversion structure 10 is bonded to the first semiconductor layer 20111 of the LED chip 20 of the micro LED chip structure to obtain Fig.12 The structure shown.

[0098] Reference Figure 2-Figure 12 ,in Fig.12 FIG. 4 shows a side view of a micro LED device 1 according to an embodiment of the present disclosure. Fig.12 As shown, remove Fig.11 The transparent substrate 101 of the first color conversion structure 10 in the structure shown in FIG. 1 is used to obtain the second color conversion structure 11 through the first color conversion structure 10. Fig.12 The micro LED device 1 is shown.

[0099] Reference Figures 2 to 12 It should be understood that the light of the third color, such as blue light, emitted by the micro LED unit 2011 excites the photoluminescent material layer 1061 of the first color, such as red, to emit red light, and the light of the third color, such as blue light, emitted by the micro LED unit 2011 excites the photoluminescent material layer 1062 of the second color, such as green, to emit green light. Since the position corresponding to the first light absorption layer 1033 is used to emit blue light, the light of the third color, such as blue light, emitted by the micro LED unit is partially absorbed after passing through the first light absorption layer 1033, and some of the blue light still passes through the first light absorption layer 1033. The light of the first color, such as red light, the light of the second color, such as green light, and the light of the third color, such as blue light, emitted through the photoluminescent material layer and the first light absorption layer 1033 can be synthesized to obtain white light. Therefore, by providing a first light-absorbing layer that partially absorbs, for example, blue light emitted by the micro LED unit, the blue light overflow caused by the blue light emitted by the micro LED unit directly emitted from the micro LED device can be reduced, thereby reducing the color deviation and poor color purity caused by the blue light overflow, thereby improving the balance of different colors of light emitted from the micro LED device, enhancing the color purity of the micro LED, and further improving the display effect of the micro LED device.

[0100] Regarding the second light absorbing layer, since the first first through hole 1021 is aligned with the first second through hole 1051, and the second first through hole 1022 is aligned with the second second through hole 1052, when the second light absorbing layer is filled in the first first through hole 1021 and / or in the second first through hole 1022, and when a portion of, for example, blue light emitted by the micro LED unit corresponding to the photoluminescent material layer 1061 of the first color and the photoluminescent material layer 1062 of the second color does not participate in the excitation of the photoluminescent material layer and leaks out through the photoluminescent material layer, the second light absorbing layer can absorb the leaked portion of blue light, thereby reducing the mixed output of the leaked portion of blue light and the red light and green light emitted by the exciting photoluminescent material layer, thereby improving the color purity of the micro LED, thereby improving the display effect of the micro LED device.

[0101] In addition, regarding the third light absorption layer 104, the third light absorption layer 104 can partially absorb, for example, blue light emitted by the micro LED unit 2011 corresponding to the third first through hole 1023, thereby further reducing the blue light overflow caused by the blue light emitted by the micro LED unit directly emitted from the micro LED device, thereby further improving the display effect of the micro LED device. And because the third light absorption layer 104 covers the photoluminescent material layer, when a part of, for example, blue light emitted by the micro LED unit corresponding to the photoluminescent material layer does not participate in the excitation of the photoluminescent material layer and passes through the photoluminescent material layer and leaks out, the third light absorption layer 104 can absorb the leaked part of the blue light, thereby reducing the mixed output of the leaked part of the blue light and the red light and green light emitted by the exciting photoluminescent material layer, thereby improving the color purity of the micro LED, thereby improving the display effect of the micro LED device.

[0102] In addition, with respect to the fourth light absorption layer 1063, when the fourth light absorption layer 1063 is filled in the third second through hole 1053, the fourth light absorption layer 1063 can further enhance the absorption of, for example, blue light emitted by the micro LED unit 2011 corresponding to the third second through hole 1053, thereby further reducing the blue light overflow caused by the light emitted by the micro LED unit directly emitted from the micro LED device, thereby further improving the display effect of the micro LED device.

[0103] In addition, regarding the fifth light absorption layer, the fifth light absorption layer can partially absorb, for example, blue light emitted by the micro LED unit corresponding to the third first through hole, thereby further reducing the blue light overflow caused by the blue light emitted by the micro LED unit directly emitted from the micro LED device, thereby further improving the display effect of the micro LED device. And because the fifth light absorption layer covers the photoluminescent material layer, when a part of, for example, blue light emitted by the micro LED unit corresponding to the photoluminescent material layer does not participate in the excitation of the photoluminescent material layer and leaks through the photoluminescent material layer, the fifth light absorption layer can absorb the leaked part of the blue light, thereby reducing the mixed output of the leaked part of the blue light and the red light and green light emitted by the exciting photoluminescent material layer, thereby improving the color purity of the micro LED, thereby improving the display effect of the micro LED device. The material of the fifth light absorption layer can be the same as the material of the first light absorption layer, the material of the second light absorption layer, the material of the third light absorption layer, and the material of the fourth light absorption layer.

[0104] In addition, regarding the first reflective layer, the first reflective layer is arranged on the second barrier layer and the photoluminescent material layer, and the insulating layer can be arranged on the first reflective layer and between the first reflective layer and the micro LED chip, so the first reflective layer can cover, for example, the photoluminescent material layer of the first color and the photoluminescent material layer of the second color. Since the first reflective layer is used to reflect light of the color corresponding to the photoluminescent material layer, the light emitted from the micro LED unit, for example, blue light, can pass through the first reflective layer, and when the blue light emitted by the micro LED unit excites the photoluminescent material layer of the first color, for example, red, and emits red light, part of the excited red light will be emitted toward the direction of the micro LED unit, and the first reflective layer can reflect the part of the red light toward the direction of the photoluminescent material layer of the first color, for example, red, so as to increase the light output of the light of the color corresponding to the photoluminescent material layer, thereby improving the brightness of the micro LED and preventing the red light from being emitted toward the micro LED unit. Part of the red light emitted in the direction of the D unit interferes with the blue light emitted by the micro LED unit; similarly, when the blue light emitted by the micro LED unit excites the photoluminescent material layer of a second color, such as green, to emit green light, part of the excited green light will be emitted in the direction of the micro LED unit. The first reflective layer can reflect the part of the green light in the direction of the photoluminescent material layer of the second color, such as green, so as to increase the light output of the color corresponding to the photoluminescent material layer, thereby improving the brightness of the micro LED and preventing part of the green light emitted in the direction of the micro LED unit from interfering with the blue light emitted by the micro LED unit.

[0105] It is worth noting that, when the first second through hole 1021 is filled with the first filter layer 1031 and the second second through hole 1022 is filled with the second filter layer 1032, the first filter layer 1031 only allows light of the first color, such as red light, to pass through, and the first filter layer 1031 will reflect light of the third color, such as blue light, toward the direction of the photoluminescent material layer 1061 of the first color, such as red light. The second filter layer 1032 only allows light of the second color, such as green light, to pass through, and the second filter layer 1032 will reflect light of the third color, such as blue light, toward the direction of the photoluminescent material layer 1062 of the second color, such as green light. Therefore, the function of the first filter layer 1031 and the second filter layer 1032 is to reflect light other than the light of the corresponding color, which is different from the function of the first light absorption layer, the second light absorption layer and the third light absorption layer to absorb light.

[0106] It is worth noting that when the material of the first barrier layer is a transparent material, the number of first through holes in each group of first through holes may be different from the number of second through holes in the corresponding second through hole group. For example, when each group of second through holes includes a first second through hole, a second second through hole, and a third second through hole, the corresponding first through hole group may include a first first through hole aligned with the first second through hole and a second first through hole aligned with the second second through hole, and the first first through hole and the second first through hole may be filled with a photoluminescent material layer. Since the first barrier layer is a transparent material, the light emitted by the micro LED unit that does not correspond to the photoluminescent material layer may pass through the first barrier layer of transparent material and be emitted from the micro LED device.

[0107] The present disclosure also provides a micro LED device.

[0108] like Figure 2-Figure 12 As shown, the micro LED device 1 includes a second color conversion structure 11 and a micro LED chip structure, the micro LED chip structure includes a micro LED chip 20, the micro LED chip 20 includes a micro LED unit array 201 composed of a plurality of micro LED units 2011, wherein the second color conversion structure 11 includes: a first barrier layer 102, the first barrier layer 102 includes a first through hole array 1020, the arrangement of the first through hole array 1020 corresponds to the arrangement of the micro LED unit array 201, wherein the first through hole array 1020 includes a plurality of groups of first through holes, each group of first through holes includes at least two first through holes; a first light absorption layer 1033, the first light absorption layer 1033 is filled in part of the first through holes in each group of first through holes, wherein ... The second barrier layer 105 is used to partially absorb the light emitted by the micro LED unit 2011; the second barrier layer 105 is arranged below the first barrier layer 102 and the first light absorbing layer 1033, and the second barrier layer 105 includes a second through hole array 1050, and the second through hole array 1050 corresponds to the first through hole array 1020, wherein the second through hole array 1050 includes a plurality of groups of second through holes corresponding to the plurality of groups of first through holes, and the second through holes in each group of second through holes correspond to the first through holes in the corresponding first through hole group; a photoluminescent material layer, the photoluminescent material layer is filled in the second through holes in each group of second through holes that do not correspond to the first through holes filled with the first light absorbing layer, and the color of the light emitted by the micro LED unit 2011 is different from the color corresponding to the photoluminescent material layer. The second barrier layer 105 and the photoluminescent material layer of the second color conversion structure 11 are arranged on the light emitting side of the micro LED chip 20.

[0109] According to an embodiment of the present disclosure, each group of first through holes includes three first through holes, and the three first through holes include a first first through hole 1021, a second first through hole 1022, and a third first through hole 1023. The first light absorption layer 1033 is filled in the third first through hole 1023 in each group of first through holes, and the first light absorption layer 1033 is used to partially absorb the third color light emitted by the micro LED unit 2011. Each group of second through holes includes a first second through hole 1051 aligned with the first first through hole 1021, a second second through hole 1052 aligned with the second first through hole 1022, and a third second through hole 1053 aligned with the second first through hole 1023. 052. A third second through hole 1053 aligned with the third first through hole 1023, the photoluminescent material layer includes a photoluminescent material layer 1061 of a first color and a photoluminescent material layer 1062 of a second color, the photoluminescent material layer 1061 of the first color is filled in the first second through hole 1051 in each group of second through holes, and the photoluminescent material layer 1062 of the second color is filled in the second second through hole 1052 in each group of second through holes, and the light corresponding to the first color, the light corresponding to the second color and the light corresponding to the third color are synthesized to obtain white light.

[0110] According to an embodiment of the present disclosure, the second color conversion structure also includes at least one of a first filling portion and a second filling portion, wherein: the first filling portion is used to fill the first first through hole 1021 in each group of first through holes, and the first filling portion includes a first filter layer 1031 that only allows light of the first color to pass through, and a second light absorbing layer or a transparent material for partially absorbing light of the third color; the second filling portion is used to fill the second first through hole 1022 in each group of first through holes, and the second filling portion includes a second filter layer 1032 that only allows light of the second color to pass through, and a second light absorbing layer or a transparent material for partially absorbing light of the third color.

[0111] According to an embodiment of the present disclosure, when there is an unfilled first through-hole in each group of first through-holes, the second color conversion structure 11 further includes a transparent material, and the transparent material is filled in the unfilled first through-hole.

[0112] According to an embodiment of the present disclosure, the first color is red, the second color is green, and the third color is blue.

[0113] According to an embodiment of the present disclosure, each group of first through holes includes two first through holes, the first light absorption layer is filled in one first through hole in each group of first through holes, the first light absorption layer is used to partially absorb the third color of light emitted by the micro LED unit, each group of second through holes includes two second through holes respectively aligned with the two first through holes in the corresponding first through hole group, the photoluminescent material layer includes a fourth color of photoluminescent material layer, the fourth color of photoluminescent material layer is filled in the second through holes in each group of second through holes that do not correspond to the first through holes filled with the first light absorption layer, and the light corresponding to the fourth color and the light of the third color are synthesized to obtain white light.

[0114] According to an embodiment of the present disclosure, the second color conversion structure also includes a third filling portion, which is used to fill the first through holes in each group of first through holes that are not filled with the first light absorption layer, and the third filling portion includes a third filter layer that only allows light of the fourth color to pass through, a second light absorption layer for partially absorbing the third color of light, or a transparent material.

[0115] According to an embodiment of the present disclosure, the fourth color is yellow and the third color is blue.

[0116] According to an embodiment of the present disclosure, the second color conversion structure 11 further includes a third light absorbing layer 104, and the third light absorbing layer 104 is arranged below the first barrier layer 102 and the first light absorbing layer 1033, and the third light absorbing layer 104 is used to partially absorb the light emitted by the micro LED unit 2011, and the second barrier layer 105 is arranged below the third light absorbing layer 104.

[0117] According to an embodiment of the present disclosure, the second color conversion structure 11 also includes a fourth filling portion, which is filled in the second through holes in each group of second through holes corresponding to the first through holes filled with the first light absorption layer 1033, and the fourth filling portion includes a fourth light absorption layer 1063, a photoluminescent material layer of a third color, or a transparent material for partially absorbing the light emitted by the micro LED unit 2011.

[0118] According to an embodiment of the present disclosure, the second color conversion structure further includes a fifth light absorption layer, which is disposed on the first barrier layer, and the fifth light absorption layer is used to partially absorb the light emitted by the micro LED unit.

[0119] According to an embodiment of the present disclosure, the second color conversion structure 11 further includes a first reflective layer, which is disposed below the second barrier layer 105 and the photoluminescent material layer, and is used to reflect light of a color corresponding to the photoluminescent material layer.

[0120] According to an embodiment of the present disclosure, the second color conversion structure 11 further includes an insulating layer 107 , which is disposed below the second barrier layer 105 and the photoluminescent material layer. The insulating layer 107 of the second color conversion structure 11 is disposed on the light emitting side of the micro LED chip 20 .

[0121] According to an embodiment of the present disclosure, the micro LED chip structure also includes a driving chip, and the side of the micro LED chip 20 opposite to the light emitting side is arranged on the driving chip, or the micro LED chip structure also includes a driving chip and a flexible circuit board, and the side of the micro LED chip 20 opposite to the light emitting side is arranged on the driving chip to form a micro LED module, and the micro LED module is arranged on the flexible circuit board through the driving chip.

[0122] According to an embodiment of the present disclosure, the material of the first barrier layer 102 and the material of the second barrier layer 105 include visible light shielding materials, the material of the first color photoluminescent material layer 1061 and the material of the second color photoluminescent material layer 1062 include at least one of II-VI group quantum dots, III-V group quantum dots, perovskite quantum dots and carbon quantum dots, the material of the first light absorption layer 1033 and the material of the second light absorption layer include organic dyes, nano absorption particles or inorganic oxides for absorbing blue light, and the material of the first filter layer 1031 and the material of the second filter layer 1032 include organic dyes, nano absorption particles or inorganic oxides.

[0123] It is worth noting that any relevant description about the micro LED device in the above-mentioned micro LED device preparation method (including but not limited to technical features and their functions, explanations, etc.) can be applied to the micro LED device disclosed in the present invention.

[0124] According to embodiments of the present disclosure, the pixel size in the micro LED device is typically less than 50 microns.

[0125] The present disclosure also provides a display device, which includes the above-mentioned type LED device. The display device can be applied to flexible electronic devices to realize technologies such as augmented reality (AR), virtual reality (VR), extended reality (XR), and mixed reality (MR). For example, the micro LED device can be the projection part of an electronic device, such as a projector, a head-up display (HUD), etc.; for another example, the micro LED device can also be the display part of an electronic device, such as a smart phone, a smart watch, a laptop, a tablet computer, a driving recorder, a navigator, a head-mounted device, and any other device with a display screen.

[0126] It should be noted that the terms used herein are only for describing specific embodiments and are not intended to limit the exemplary embodiments according to the present application. As used herein, unless the context clearly indicates otherwise, the singular form is also intended to include the plural form. In addition, it should be understood that when the terms "comprise" and / or "include" are used in this specification, it indicates the presence of features, steps, operations, devices, components and / or combinations thereof.

[0127] It should be understood that "one embodiment" or "an embodiment" mentioned throughout the specification means that specific features, structures or characteristics related to the embodiment are included in at least one embodiment of the present application. Therefore, "in one embodiment" or "in an embodiment" appearing throughout the specification does not necessarily refer to the same embodiment. In addition, these specific features, structures or characteristics can be combined in one or more embodiments in any suitable manner. It should be understood that in various embodiments of the present application, the size of the serial number of each step / process mentioned above does not mean the order of execution, and the execution order of each step / process should be determined by its function and internal logic, and should not constitute any limitation on the implementation process of the embodiment of the present application. In addition, the serial numbers of the embodiments of the present application mentioned above are only for description and do not represent the advantages and disadvantages of the embodiments.

[0128] It should be noted that the terms "first", "second", etc. in the specification and claims of the present application and the above-mentioned drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence. It should be understood that the data used in this way can be interchangeable where appropriate, so that the embodiments of the present application described herein can be implemented in an order other than those illustrated or described herein, for example. In addition, the terms "including" and "having" and any of their variations are intended to cover non-exclusive inclusions, for example, a process, method, system, product or device that includes a series of steps or units is not necessarily limited to those steps or units that are clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices.

[0129] The above description is only a preferred embodiment of the present disclosure and is not intended to limit the present disclosure. For those skilled in the art, the present disclosure may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present disclosure shall be included in the protection scope of the present disclosure.

Claims

1. A method for preparing a micro LED device, wherein: The method comprises: Obtaining a transparent substrate and a micro LED chip structure, wherein the micro LED chip structure comprises a micro LED chip, and the micro LED chip comprises a micro LED unit array composed of a plurality of micro LED units; Disposing a first barrier layer on the transparent substrate, so that the first barrier layer includes a first through hole array, the arrangement of the first through hole array corresponds to the arrangement of the micro LED unit array, wherein the first through hole array includes a plurality of groups of first through holes, and each group of first through holes includes at least two first through holes; Filling a first light absorption layer in part of the first through holes in each group of first through holes to obtain a first intermediate structure, wherein the first light absorption layer is used to partially absorb light emitted by the micro LED unit; Disposing a second barrier layer on the first intermediate structure, so that the second barrier layer includes a second through hole array, the second through hole array corresponds to the first through hole array, wherein the second through hole array includes a plurality of groups of second through holes corresponding to the plurality of groups of first through holes, and a second through hole in each group of second through holes corresponds to a first through hole in the corresponding first through hole group; Filling a photoluminescent material layer in the second through holes in each group of second through holes that do not correspond to the first through holes filled with the first light absorbing layer, to obtain a first color conversion structure, wherein the color of light emitted by the micro LED unit is different from the color corresponding to the photoluminescent material layer; The side of the first color conversion structure opposite to the transparent substrate is bonded to the light emitting side of the micro LED chip to obtain a micro LED device.

2. The method for preparing a micro LED device according to claim 1, wherein: The method comprises: disposing a first barrier layer on the transparent substrate, so that the first barrier layer includes a first through hole array, and the arrangement of the first through hole array corresponds to the arrangement of the micro LED unit array, wherein the first through hole array includes a plurality of groups of first through holes, and each group of first through holes includes at least two first through holes, comprising: disposing a first barrier layer on the transparent substrate and opening a first through hole array on the first barrier layer, so that the arrangement of the first through hole array corresponds to the arrangement of the micro LED unit array, wherein the first through hole array includes a plurality of groups of first through holes, and each group of first through holes includes three first through holes, and the three first through holes include a first first through hole, a second first through hole, and a third first through hole, Filling a first light absorption layer in part of the first through holes in each group of first through holes to obtain a first intermediate structure, wherein the first light absorption layer is used to partially absorb the light emitted by the micro LED unit, comprises: filling a first light absorption layer in a third first through hole in each group of first through holes, wherein the first light absorption layer is used to partially absorb the light of a third color emitted by the micro LED unit, The second barrier layer is arranged on the first intermediate structure, so that the second barrier layer includes a second through hole array, the second through hole array corresponds to the first through hole array, wherein the second through hole array includes a plurality of groups of second through holes corresponding to the plurality of groups of first through holes, and the second through holes in each group of second through holes correspond to the first through holes in the corresponding first through hole group, comprising: the second barrier layer is arranged on the first intermediate structure and a second through hole array is opened on the second barrier layer, so that the second through hole array corresponds to the first through hole array, wherein the second through hole array includes a plurality of groups of second through holes corresponding to the plurality of groups of first through holes, and each group of second through holes includes a first second through hole aligned with the first first through hole, a second second through hole aligned with the second first through hole, and a third second through hole aligned with the third first through hole, The photoluminescent material layer includes a photoluminescent material layer of a first color and a photoluminescent material layer of a second color. The photoluminescent material layer is filled in the second through holes in each group of second through holes that do not correspond to the first through holes filled with the first light absorbing layer to obtain a first color conversion structure, wherein the color of the light emitted by the micro LED unit is different from the color corresponding to the photoluminescent material layer, comprising: filling the first second through hole in each group of second through holes with a photoluminescent material layer of a first color, and filling the second second through hole in each group of second through holes with a photoluminescent material layer of a second color, and synthesizing the light corresponding to the first color, the light corresponding to the second color, and the light corresponding to the third color to obtain white light.

3. The method for preparing a micro LED device according to claim 2, wherein: When the first light absorption layer is filled in part of the first through holes in each group of first through holes, the method further includes: A first filling step, wherein the first filling step comprises at least one of the following steps: Filling a first filling portion in a first first through hole in each group of first through holes, wherein the first filling portion includes a first filter layer that allows only light of a first color to pass through, a second light absorption layer for partially absorbing light of a third color, or a transparent material; A second filling portion is filled in the second first through hole in each group of first through holes, wherein the second filling portion includes a second filter layer that allows only light of the second color to pass through, a second light absorbing layer for partially absorbing light of the third color, or a transparent material.

4. The method for preparing a micro LED device according to claim 3, wherein: The first filling step further comprises: When there is an unfilled first through hole in each group of first through holes, a transparent material is filled in the unfilled first through hole.

5. The method for preparing a micro LED device according to claim 1, wherein: The method comprises: disposing a first barrier layer on the transparent substrate, so that the first barrier layer includes a first through hole array, and the arrangement of the first through hole array corresponds to the arrangement of the micro LED unit array, wherein the first through hole array includes a plurality of groups of first through holes, and each group of first through holes includes at least two first through holes, comprising: disposing a first barrier layer on the transparent substrate and opening a first through hole array on the first barrier layer, so that the arrangement of the first through hole array corresponds to the arrangement of the micro LED unit array, wherein the first through hole array includes a plurality of groups of first through holes, and each group of first through holes includes two first through holes, Filling a first light absorption layer in a portion of the first through holes in each group of first through holes to obtain a first intermediate structure, wherein the first light absorption layer is used to partially absorb the light emitted by the micro LED unit comprises: filling a first light absorption layer in a first through hole in each group of first through holes to obtain a first intermediate structure, wherein the first light absorption layer is used to partially absorb the light of the third color emitted by the micro LED unit, The second barrier layer is arranged on the first intermediate structure, so that the second barrier layer includes a second through hole array, the second through hole array corresponds to the first through hole array, wherein the second through hole array includes a plurality of groups of second through holes corresponding to the plurality of groups of first through holes, and the second through holes in each group of second through holes correspond to the first through holes in the corresponding first through hole group, comprising: the second barrier layer is arranged on the first intermediate structure and a second through hole array is opened on the second barrier layer, so that the second through hole array corresponds to the first through hole array, wherein the second through hole array includes a plurality of groups of second through holes corresponding to the plurality of groups of first through holes, and each group of second through holes includes two second through holes respectively aligned with two first through holes in the corresponding first through hole group, The photoluminescent material layer includes a photoluminescent material layer of a fourth color, and the photoluminescent material layer is filled in the second through holes in each group of second through holes that do not correspond to the first through holes filled with the first light absorbing layer to obtain a first color conversion structure, wherein the color of light emitted by the micro LED unit is different from the color corresponding to the photoluminescent material layer, including: filling the second through holes in each group of second through holes that do not correspond to the first through holes filled with the first light absorbing layer with a photoluminescent material layer of a fourth color, and synthesizing the light corresponding to the fourth color and the light of the third color to obtain white light.

6. The method for preparing a micro LED device according to claim 5, wherein: When the first light absorption layer is filled in part of the first through holes in each group of first through holes, the method further includes: A third filling portion is filled in the first through holes in each group of first through holes that are not filled with the first light absorption layer. The third filling portion includes a third filter layer that only allows light of a fourth color to pass through, a second light absorption layer for partially absorbing light of the third color, or a transparent material.

7. The method for preparing a micro LED device according to claim 1, wherein: Before the second barrier layer is disposed on the first intermediate structure, the method further comprises: disposing a third light absorbing layer on the first intermediate structure, wherein the second light absorbing layer is used to partially absorb the light emitted by the micro LED unit. Providing a second barrier layer on the first intermediate structure includes: providing the second barrier layer on the third light absorbing layer.

8. The method for preparing a micro LED device according to claim 1, wherein: When the photoluminescent material layer is filled in the second through holes in each group of second through holes that do not correspond to the first through holes filled with the first light absorbing layer, the method further comprises: A fourth filling portion is filled in the second through holes in each group of second through holes corresponding to the first through holes filled with the first light absorption layer, wherein the fourth filling portion includes a transparent material.

9. The method for preparing a micro LED device according to claim 1, wherein: Before the first barrier layer is provided on the transparent substrate, the method further comprises: providing a fifth light absorbing layer on the transparent substrate, wherein the fifth light absorbing layer is used to partially absorb the light emitted by the micro LED unit. Providing a first barrier layer on the transparent substrate includes: providing the first barrier layer on the fifth light absorbing layer.

10. The method for preparing a micro LED device according to claim 1, wherein: After filling the photoluminescent material layer in the second through holes in each group of second through holes that do not correspond to the first through holes filled with the first light absorbing layer, the method further includes: providing an insulating layer on the second barrier layer and the photoluminescent material layer, Bonding the side of the first color conversion structure opposite to the transparent substrate to the light-emitting side of the micro LED chip includes: bonding the insulating layer of the first color conversion structure to the light-emitting side of the micro LED chip.

11. The method for preparing a micro LED device according to claim 1, wherein: After bonding the side of the first color conversion structure opposite to the transparent substrate to the light emitting side of the micro LED chip, the method includes: The transparent substrate of the first color conversion structure is removed, and a second color conversion structure is obtained from the first color conversion structure.

12. A micro LED device, wherein: The micro LED device comprises a second color conversion structure and a micro LED chip structure, wherein the micro LED chip structure comprises a micro LED chip, and the micro LED chip comprises a micro LED unit array composed of a plurality of micro LED units, wherein the second color conversion structure comprises: A first barrier layer, the first barrier layer comprising a first through hole array, the arrangement of the first through hole array corresponds to the arrangement of the micro LED unit array, wherein the first through hole array comprises a plurality of groups of first through holes, and each group of first through holes comprises at least two first through holes; a first light absorption layer, the first light absorption layer filling part of the first through holes in each group of first through holes, wherein the first light absorption layer is used to partially absorb the light emitted by the micro LED unit; a second barrier layer, the second barrier layer being disposed below the first barrier layer and the first light absorbing layer, the second barrier layer comprising a second through hole array, the second through hole array corresponding to the first through hole array, wherein the second through hole array comprises a plurality of groups of second through holes corresponding to the plurality of groups of first through holes, and the second through holes in each group of second through holes correspond to the first through holes in the corresponding first through hole group; A photoluminescent material layer is filled in the second through holes in each group of second through holes that do not correspond to the first through holes filled with the first light absorbing layer, the color of light emitted by the micro LED unit is different from the color corresponding to the photoluminescent material layer, and the second barrier layer and the photoluminescent material layer of the second color conversion structure are arranged on the light emitting side of the micro LED chip.

13. The micro LED device according to claim 12, wherein: Each group of first through holes includes two first through holes, the first light absorption layer is filled in one first through hole in each group of first through holes, the first light absorption layer is used to partially absorb the third color light emitted by the micro LED unit, each group of second through holes includes two second through holes that are respectively aligned with the two first through holes in the corresponding first through hole group, the photoluminescent material layer includes a fourth color photoluminescent material layer, the fourth color photoluminescent material layer is filled in the second through holes in each group of second through holes that do not correspond to the first through holes filled with the first light absorption layer, and the light corresponding to the fourth color and the light of the third color are synthesized to obtain white light.

14. The micro LED device according to claim 13, wherein: The second color conversion structure also includes a third filling part, which is used to fill the first through holes in each group of first through holes that are not filled with the first light absorption layer. The third filling part includes a third filter layer that only allows light of the fourth color to pass through, a second light absorption layer for partially absorbing the light of the third color, or a transparent material.

15. The micro LED device according to claim 13, wherein: The fourth color is yellow and the third color is blue.

16. The micro LED device according to claim 12, wherein: The second color conversion structure further includes a third light absorbing layer, which is disposed below the first barrier layer and the first light absorbing layer, and is used to partially absorb the light emitted by the micro LED unit. The second barrier layer is disposed below the third light absorbing layer.

17. The micro LED device according to claim 12, wherein: The second color conversion structure further includes a fourth filling portion, which is filled in the second through holes in each group of second through holes corresponding to the first through holes filled with the first light absorption layer, and the fourth filling portion includes a transparent material.

18. The micro LED device according to claim 12, wherein: The second color conversion structure further includes a fifth light absorbing layer, which is disposed on the first barrier layer and is used to partially absorb light emitted by the micro LED unit.

19. The micro LED device according to claim 12, wherein: The second color conversion structure further includes an insulating layer, which is disposed below the second barrier layer and the photoluminescent material layer. The insulating layer of the second color conversion structure is disposed on the light emitting side of the micro LED chip.

20. The micro LED device according to claim 12, wherein: The micro LED chip structure further includes a driving chip, and a side of the micro LED chip opposite to the light emitting side is arranged on the driving chip. Alternatively, the micro LED chip structure further includes a driving chip and a flexible circuit board, the side of the micro LED chip opposite to the light emitting side is arranged on the driving chip to form a micro LED module, and the micro LED module is arranged on the flexible circuit board through the driving chip.

21. The micro LED device according to claim 12, wherein: The material of the first barrier layer and the material of the second barrier layer include visible light shielding materials, and the material of the first light absorption layer includes organic dyes, nano absorption particles or inorganic oxides for absorbing blue light.

22. A display device, wherein: The display device comprises the micro LED device according to any one of claims 12 to 21.

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