Miniature LED device preparation method, miniature LED device and display device
By providing a reflective layer and a first partition layer on the transparent substrate, combining the color conversion structure of the photoluminescent material layer and the light absorbing layer, the problem of unsatisfactory display effect of existing full-color Micro LED devices is solved, and a more balanced color output and higher brightness are achieved.
Patent Information
- Application Number
- CN202411941787.1
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-26
- Publication Date
- 2025-04-11
- Estimated Expiration
- 2044-12-26
AI Technical Summary
The existing full-color Micro LED devices achieved by color conversion method have the problem of poor display effects.
By providing a reflective layer and a first spacer layer on the transparent substrate, a first color conversion structure is formed using a photoluminescent material layer and a light absorbing layer, and bonding it to the light-out side of the micro LED chip to achieve color conversion and absorption of light.
Improves the balance of light of different colors emitted by micro LED devices, improves color purity, improves display effect, and enhances brightness.
Smart Images

Figure CN119816048A_ABST
Abstract
Description
Technical Field
[0001] The present disclosure relates to the technical field of semiconductor Micro LED, and in particular, to a method for preparing a Micro LED device, a Micro LED device and a display device. Background Art
[0002] Micro-LED is a comprehensive technology that integrates new display technology and light-emitting diode (LED) technology. It has the advantages of small size, high brightness, high resolution, and low power consumption. It is considered to be one of the most promising next-generation new display and light-emitting devices. Currently, Micro LED full-color display can be achieved in a variety of ways, one of which is the color conversion method. However, the full-color Micro LED device achieved by the color conversion method still has problems such as unsatisfactory display effects. Summary of the invention
[0003] The solution disclosed herein provides a method for preparing a micro LED device, a micro LED device, and a display device.
[0004] According to one aspect of an embodiment of the present disclosure, a method for preparing a micro LED device is provided, wherein the method comprises: obtaining a transparent substrate and a micro LED chip structure, wherein the micro LED chip structure comprises a micro LED chip, and the micro LED chip comprises a micro LED unit array composed of a plurality of micro LED units; arranging a reflective layer on the transparent substrate, so that the reflective layer comprises a first through hole array, the arrangement of the first through hole array corresponds to the arrangement of the micro LED unit array, wherein the first through hole array comprises a plurality of groups of first through holes, and the reflective layer is used to reflect light emitted by the micro LED unit; arranging a first barrier layer on the reflective layer, so that the first barrier layer comprises a second through hole array, the arrangement of the second through hole array corresponds to the arrangement of the micro LED unit array, wherein the second through hole array comprises A plurality of groups of second through holes corresponding to the plurality of groups of first through holes, each group of second through holes comprising at least two second through holes, the number of first through holes in each group of first through holes being less than the number of second through holes in each group of second through holes, and the first through holes in each group of first through holes corresponding to part of the second through holes in the corresponding second through hole group; a photoluminescent material layer is filled in the second through holes without corresponding first through holes in each group of second through holes, and a first light absorption layer is filled in the corresponding first through holes and second through holes to obtain a first color conversion structure, wherein the first light absorption layer is used to partially absorb the light emitted by the micro LED unit, and the color of the light emitted by the micro LED unit is different from the color corresponding to the photoluminescent material layer; a side of the first color conversion structure opposite to the transparent substrate is bonded to the light emitting side of the micro LED chip to obtain a micro LED device.
[0005] Further, each group of first through holes includes one first through hole, each group of second through holes includes three second through holes, a photoluminescent material layer is filled in the second through hole without corresponding first through hole in each group of second through holes, and a first light absorption layer is filled in the corresponding first through hole and second through hole, wherein the first light absorption layer is used to partially absorb the light emitted by the micro LED unit, and the color of the light emitted by the micro LED unit is different from the color corresponding to the photoluminescent material layer. The method includes: filling a photoluminescent material layer of a first color and a photoluminescent material layer of a second color in two second through holes without corresponding first through holes in each group of second through holes, respectively, and filling a first light absorption layer in the corresponding first through hole and second through hole, wherein the first light absorption layer is used to partially absorb the light of a third color emitted by the micro LED unit, and the light corresponding to the first color, the light corresponding to the second color and the light of the third color are synthesized to obtain white light.
[0006] Furthermore, before the reflective layer is provided on the transparent substrate, the method further includes: providing a second barrier layer on the transparent substrate, so that the second barrier layer includes a third through hole array, the arrangement of the third through hole array corresponds to the arrangement of the micro LED unit array, wherein the third through hole array includes a plurality of groups of third through holes, each group of third through holes includes a first third through hole, a second third through hole and a third third through hole; a first filling step, when the first filling step is completed, a first intermediate structure is obtained, the first filling step includes at least one of the following steps: filling a first filling portion in the first third through hole in each group of third through holes, the first filling portion including a first color that only allows the first color to be A first filter layer through which light passes or a second light absorbing layer for partially absorbing light of a third color; a second filling portion is filled in the second third through hole in each group of third through holes, and the second filling portion includes a second filter layer that only allows light of the second color to pass through or a second light absorbing layer for partially absorbing light of the third color; a third filling portion is filled in the third third through hole in each group of third through holes, and the third filling portion includes a third filter layer that only allows light of the third color to pass through or a second light absorbing layer for partially absorbing light of the third color, and the first filling portion, the second filling portion and the second light absorbing layer included in the third filling portion are made of the same material as the first light absorbing layer.
[0007] Furthermore, the first filling step further comprises: when there are unfilled third through holes in each group of third through holes, filling the unfilled third through holes with a transparent material.
[0008] Further, a reflective layer is provided on the transparent substrate, so that the reflective layer includes a first through hole array, and the arrangement of the first through hole array corresponds to the arrangement of the micro LED unit array, wherein the first through hole array includes a plurality of groups of first through holes, including: a reflective layer is provided on the first intermediate structure, and a first through hole array is opened on the reflective layer, so that the first through hole array includes a plurality of groups of first through holes, each group of first through holes includes a first through hole aligned with the third through hole, and the first through hole exposes the first intermediate structure, and a first barrier layer is provided on the reflective layer, so that the first barrier layer includes a second through hole array, and the arrangement of the second through hole array corresponds to The arrangement of the micro LED unit array, wherein the second through hole array includes a plurality of groups of second through holes corresponding to the plurality of groups of first through holes, each group of second through holes includes at least two second through holes, the number of first through holes in each group of first through holes is less than the number of second through holes in each group of second through holes, and the first through holes in each group of first through holes correspond to part of the second through holes in the corresponding second through hole group, comprising: arranging a first barrier layer on the reflective layer, and opening a second through hole array on the first barrier layer, so that the second through hole array is aligned with the third through hole array and is located above the third through hole array, and the second through hole array exposes the reflective layer, wherein the The second through hole array includes a plurality of groups of second through holes corresponding to the plurality of groups of third through holes, each group of second through holes includes a first second through hole aligned with the first third through hole, a second second through hole aligned with the second third through hole, and a third second through hole aligned with the third third through hole, the third second through hole being aligned with the first through hole, two second through holes in each group of second through holes without corresponding first through holes are filled with a first color photoluminescent material layer and a second color photoluminescent material layer, respectively, and a first light absorbing layer is filled in the corresponding first through holes and second through holes, wherein the first light absorbing layer is used to partially absorb light emitted by the micro LED unit The method of generating white light by synthesizing light of a third color corresponding to the first color, light corresponding to the second color and light corresponding to the third color comprises: filling a photoluminescent material layer of a first color in a first second through hole in each group of second through holes, filling a photoluminescent material layer of a second color in a second second through hole in each group of second through holes, and filling a first light absorbing layer in the aligned first through hole and third second through hole, wherein the first light absorbing layer is used to partially absorb the light of the third color emitted by the micro LED unit, and synthesizing the light of the first color, light corresponding to the second color and light of the third color to obtain white light.
[0009] Further, each group of first through holes includes one first through hole, each group of second through holes includes two second through holes, a photoluminescent material layer is filled in the second through hole without a corresponding first through hole in each group of second through holes, and a first light absorption layer is filled in the corresponding first through hole and second through hole, wherein the first light absorption layer is used to partially absorb the light emitted by the micro LED unit, and the color of the light emitted by the micro LED unit is different from the color corresponding to the photoluminescent material layer. The method includes: filling a photoluminescent material layer of a fourth color in the second through hole without a corresponding first through hole in each group of second through holes, and filling the first light absorption layer in the corresponding first through hole and second through hole, wherein the first light absorption layer is used to partially absorb the light of a third color emitted by the micro LED unit, and the light corresponding to the fourth color and the light of the third color are synthesized to obtain white light.
[0010] Further, before the reflective layer is provided on the transparent substrate, the method further includes: providing a second barrier layer on the transparent substrate, so that the second barrier layer includes a third through hole array, the arrangement of the third through hole array corresponds to the arrangement of the micro LED unit array, wherein the third through hole array includes a plurality of groups of third through holes, and each group of third through holes includes two third through holes; a second filling step, when the second filling step is completed, a second intermediate structure is obtained, and the second filling step includes at least one of the following steps: filling a fourth filling part in one third through hole in each group of third through holes, the fourth filling part including a fourth filter layer that only allows light of a fourth color to pass through or a second light absorption layer for partially absorbing light of the third color; filling a fifth filling part in another third through hole in each group of third through holes, the fifth filling part including a third filter layer that only allows light of a third color to pass through or a second light absorption layer for partially absorbing light of the third color, and the second light absorption layer included in the fourth filling part and the fifth filling part is made of the same material as the first light absorption layer.
[0011] Furthermore, the second filling step further includes: when there are unfilled third through holes in each group of third through holes, filling the unfilled third through holes with a transparent material.
[0012] Further, a reflective layer is provided on the transparent substrate, so that the reflective layer includes a first through hole array, and the arrangement of the first through hole array corresponds to the arrangement of the micro LED unit array, wherein the first through hole array includes a plurality of groups of first through holes, including: a reflective layer is provided on the second intermediate structure, and a first through hole array is provided on the reflective layer, so that the first through hole array includes a plurality of groups of first through holes, each group of first through holes includes a first through hole aligned with a third through hole, and the first through hole exposes the second intermediate structure, and a first barrier layer is provided on the reflective layer, so that the first barrier layer includes a second through hole array, and the arrangement of the second through hole array corresponds to the arrangement of the micro LED unit array, wherein the second through hole array includes a plurality of groups of first through holes corresponding to the plurality of groups of first through holes A plurality of groups of second through holes, each group of second through holes includes at least two second through holes, the number of first through holes in each group of first through holes is less than the number of second through holes in each group of second through holes, and the first through holes in each group of first through holes correspond to some of the second through holes in the corresponding second through hole group, comprising: a first barrier layer is arranged on the reflective layer, and a second through hole array is opened on the first barrier layer, so that the second through hole array is aligned with the third through hole array and is located above the third through hole array, and the second through hole array exposes the reflective layer, wherein the second through hole array includes a plurality of groups of second through holes corresponding to the plurality of groups of third through holes, each group of second through holes includes two second through holes respectively aligned with two third through holes, and one second through hole in each group of second through holes is aligned with the first through hole.
[0013] Furthermore, each micro LED unit in the micro LED unit array includes a first semiconductor layer on the light emitting side, and bonding the side of the first color conversion structure opposite to the transparent substrate to the light emitting side of the micro LED chip includes: bonding the side of the first color conversion structure opposite to the transparent substrate to the first semiconductor layer.
[0014] Further, after filling the photoluminescent material layer in the second through holes without the corresponding first through holes in each group of second through holes, and filling the first light absorbing layer in the corresponding first through holes and the second through holes, the method further includes: providing an insulating layer on the first barrier layer, the photoluminescent material layer and the first light absorbing layer; bonding the side of the first color conversion structure opposite to the transparent substrate to the first semiconductor layer includes: bonding the insulating layer of the first color conversion structure to the first semiconductor layer.
[0015] Furthermore, after bonding the side of the first color conversion structure opposite to the transparent substrate to the light emitting side of the micro LED chip, the method includes: removing the transparent substrate of the first color conversion structure to obtain a second color conversion structure from the first color conversion structure.
[0016] Furthermore, before setting the second barrier layer on the transparent substrate, the method also includes: setting a third light absorbing layer on the transparent substrate, wherein the third light absorbing layer is used to partially absorb the third color of light emitted by the micro LED unit, and the third light absorbing layer is made of the same material as the first light absorbing layer, and setting the second barrier layer on the transparent substrate includes: setting the second barrier layer on the third light absorbing layer.
[0017] Furthermore, before setting the reflective layer on the first intermediate structure, the method also includes: setting a fourth light absorbing layer on the first intermediate structure, wherein the fourth light absorbing layer is used to partially absorb the third color of light emitted by the micro LED unit, and the fourth light absorbing layer is made of the same material as the first light absorbing layer, and setting the reflective layer on the first intermediate structure includes: setting the reflective layer on the fourth light absorbing layer.
[0018] According to another aspect of the present disclosure, a micro LED device is also provided.
[0019] The micro LED device comprises a second color conversion structure and a micro LED chip structure, wherein the micro LED chip structure comprises a micro LED chip, and the micro LED chip comprises a micro LED unit array composed of a plurality of micro LED units, wherein the second color conversion structure comprises: a first barrier layer, wherein the first barrier layer comprises a second through hole array, and the arrangement of the second through hole array corresponds to the arrangement of the micro LED unit array, wherein the second through hole array comprises a plurality of groups of second through holes, and each group of second through holes comprises at least two second through holes; and a reflective layer, wherein the reflective layer is disposed on the first barrier layer, and the reflective layer comprises a first through hole array, wherein the first through hole array comprises a plurality of groups of first through holes corresponding to the plurality of groups of second through holes, and the first through holes in each group of first through holes The number of the second through holes in each group of second through holes is less than the number of the second through holes in each group of second through holes, and the first through holes in each group of first through holes correspond to part of the second through holes in the corresponding second through hole group, and the reflective layer is used to reflect the light emitted by the micro LED unit; a photoluminescent material layer and a first light absorbing layer, the photoluminescent material layer is filled in the second through holes without corresponding first through holes in each group of second through holes, and the first light absorbing layer is filled in the corresponding first through holes and second through holes, wherein the first light absorbing layer is used to partially absorb the light emitted by the micro LED unit, and the color of the light emitted by the micro LED unit is different from the color corresponding to the photoluminescent material layer, and the first barrier layer, the photoluminescent material layer and the first light absorbing layer of the second color conversion structure are arranged on the light emitting side of the micro LED chip.
[0020] Further, each group of first through holes includes a first through hole, each group of second through holes includes a first second through hole, a second second through hole and a third second through hole, the third second through hole is aligned with the first through hole, the photoluminescent material layer includes a photoluminescent material layer of a first color and a photoluminescent material layer of a second color, the photoluminescent material layer of the first color is filled in the first second through hole in each group of second through holes, the photoluminescent material layer of the second color is filled in the second second through hole in each group of second through holes, and the first light absorption layer is filled in the aligned third second through hole and the first through hole, wherein the first light absorption layer is used to partially absorb the light of the third color emitted by the micro LED unit, and the light corresponding to the first color, the light corresponding to the second color and the light of the third color are synthesized to obtain white light.
[0021] Further, the second color conversion structure further includes a second barrier layer, which is disposed on the reflective layer and includes a third through hole array, the third through hole array is aligned with the second through hole array and is located above the second through hole array, wherein the third through hole array includes a plurality of groups of third through holes corresponding to the plurality of groups of second through holes, each group of third through holes includes a first third through hole aligned with the first second through hole, a second third through hole aligned with the second second through hole, and a third third through hole aligned with the third second through hole, and the second color conversion structure further includes at least one of a first filling portion, a second filling portion and a third filling portion, wherein: the first filling portion is filled in the first third through hole in each group of third through holes, The first filling part includes a first filter layer that only allows light of the first color to pass through or a second light absorbing layer for partially absorbing light of the third color; the second filling part is filled in the second third through hole in each group of third through holes, and the second filling part includes a second filter layer that only allows light of the second color to pass through or a second light absorbing layer for partially absorbing light of the third color; the third filling part is filled in the third third through hole in each group of third through holes, and the third filling part includes a third filter layer that only allows light of the third color to pass through or a second light absorbing layer for partially absorbing light of the third color, and the second light absorbing layer included in the first filling part, the second filling part and the third filling part is made of the same material as the first light absorbing layer.
[0022] Further, when there are unfilled third through holes in each group of third through holes, the second color conversion structure further includes a transparent material, and the transparent material is filled in the unfilled third through holes.
[0023] Further, the first color is red, the second color is green and the third color is blue.
[0024] Further, each group of first through holes includes a first through hole, each group of second through holes includes two second through holes, one second through hole in each group of second through holes is aligned with the first through hole, the photoluminescent material layer includes a photoluminescent material layer of a fourth color, the photoluminescent material layer of the fourth color is filled in the second through hole that is not aligned with the first through hole, and the first light absorption layer is filled in the aligned second through hole and the first through hole, wherein the first light absorption layer is used to partially absorb the third color light emitted by the micro LED unit, and the light of the fourth color and the light of the third color are synthesized to obtain white light.
[0025] Further, the second color conversion structure further includes a second barrier layer, which is disposed on the reflective layer and includes a third through hole array, the third through hole array is aligned with the second through hole array and is located above the second through hole array, wherein the third through hole array includes a plurality of groups of third through holes corresponding to the plurality of groups of second through holes, and each group of third through holes includes two third through holes, and the second color conversion structure further includes at least one of a fourth filling portion and a fifth filling portion, wherein: the fourth filling portion is filled in the third through hole above the second through hole filled with the photoluminescent material layer of the fourth color, the fourth filling portion includes a fourth filter layer that only allows light of the fourth color to pass through or a second light absorption layer for partially absorbing light of the third color; the fifth filling portion is filled in the third through hole above the first through hole filled with the first light absorption layer, the fifth filling portion includes a third filter layer that only allows light of the third color to pass through or a second light absorption layer for partially absorbing light of the third color, and the second light absorption layer included in the fourth filling portion and the fifth filling portion is made of the same material as the first light absorption layer.
[0026] Further, when there are unfilled third through holes in each group of third through holes, the color conversion structure further includes a transparent material, and the transparent material is filled in the unfilled third through holes.
[0027] Further, the fourth color is yellow and the third color is blue.
[0028] Furthermore, each micro LED unit in the micro LED unit array includes a first semiconductor layer on the light emitting side, and the first barrier layer, the photoluminescent material layer and the first light absorbing layer of the second color conversion structure are arranged on the first semiconductor layer.
[0029] Furthermore, the second color conversion structure further includes an insulating layer, wherein the insulating layer is disposed on the first barrier layer, the photoluminescent material layer and the first light absorption layer, and the insulating layer is disposed on the first semiconductor layer.
[0030] Furthermore, the second color conversion structure also includes a third light absorption layer, which is arranged on the second barrier layer, wherein the third light absorption layer is used to partially absorb the light emitted by the micro LED unit, and the third light absorption layer is made of the same material as the first light absorption layer.
[0031] Furthermore, the second color conversion structure also includes a fourth light absorbing layer, which is arranged on the reflective layer, and the second barrier layer is arranged on the fourth light absorbing layer, wherein the fourth light absorbing layer is used to partially absorb the light emitted by the micro LED unit, and the fourth light absorbing layer is made of the same material as the first light absorbing layer.
[0032] Furthermore, the micro LED chip structure also includes a driver chip, and the side of the micro LED chip opposite to the light emitting side is arranged on the driver chip, or the micro LED chip structure also includes a driver chip and a flexible circuit board, and the side of the micro LED chip opposite to the light emitting side is arranged on the driver chip to form a micro LED module, and the micro LED module is arranged on the flexible circuit board through the driver chip.
[0033] Further, the material of the first barrier layer and the material of the second barrier layer include visible light shielding materials, the material of the first color photoluminescent material layer and the material of the second color photoluminescent material layer include at least one of II-VI group quantum dots, III-V group quantum dots, perovskite quantum dots and carbon quantum dots, the material of the first light absorption layer and the material of the second light absorption layer include organic dyes, nano absorption particles or inorganic oxides for absorbing blue light, the material of the first filter layer, the material of the second filter layer and the material of the third filter layer include organic dyes, nano absorption particles or inorganic oxides, and the reflective layer includes a distributed Bragg reflective film.
[0034] According to another aspect of the embodiments of the present disclosure, a display device is provided, comprising a micro LED device prepared by the above method.
[0035] By applying the technical solution disclosed in the present invention, a transparent substrate and a micro LED chip are obtained, a reflective layer is arranged on the transparent substrate and a first barrier layer is arranged on the reflective layer, each group of second through holes included in the first barrier layer includes at least two second through holes, the number of first through holes in each group of first through holes included in the reflective layer is less than the number of second through holes in each group of second through holes, wherein the second through holes correspond to part of the first through holes, a photoluminescent material layer is filled in the second through holes without corresponding first through holes in each group of second through holes, and a first light absorption layer is filled in the corresponding first through holes and second through holes, thereby forming a first color conversion structure, and the first color conversion structure is bonded to the light-emitting side of the micro LED chip to form a micro LED device.
[0036] On the one hand, in the micro LED device, the light emitted by the micro LED unit of the micro LED chip excites the material in the photoluminescent material layer to emit light of a color different from that of the light emitted by the micro LED unit. Since the first light absorbing layer can partially absorb the light emitted by the micro LED unit, the light overflow caused by the light emitted by the micro LED unit directly from the micro LED device is reduced, thereby reducing the color deviation and poor color purity caused by the light overflow, thereby improving the balance of light of different colors emitted from the micro LED device, enhancing the color purity of the micro LED, and thereby improving the display effect of the micro LED device.
[0037] On the other hand, since the reflective layer covers the photoluminescent material layer, when a portion of the light emitted by the micro LED unit does not participate in the excitation of the photoluminescent material layer and leaks out through the photoluminescent material layer, the reflective layer can reflect the leaked portion of light back to the photoluminescent material layer and re-participate in the excitation of the photoluminescent material layer, thereby increasing the light participating in the excitation of the photoluminescent material layer, thereby increasing the light output of the color corresponding to the photoluminescent material layer, thereby improving the brightness of the micro LED, and reducing the mixed output of the leaked portion of light and the different color lights emitted by exciting the photoluminescent material layer, thereby improving the color purity of the micro LED, thereby improving the display effect of the micro LED device. BRIEF DESCRIPTION OF THE DRAWINGS
[0038] By reading the detailed description below with reference to the accompanying drawings, the above and other purposes, features and advantages of the exemplary embodiments of the present disclosure will become readily understood. In the accompanying drawings, several embodiments of the present disclosure are shown in an exemplary and non-limiting manner, and the same or corresponding reference numerals represent the same or corresponding parts, wherein:
[0039] Figure 1 is a flow chart showing a method for preparing a micro LED device according to one embodiment of the present disclosure;
[0040] Figures 2 to 13is a schematic diagram showing a preparation process flow of a method for preparing a micro LED device according to an embodiment of the present disclosure. DETAILED DESCRIPTION
[0041] It should be noted that, in the absence of conflict, the embodiments and features in the embodiments of the present application can be combined with each other. The present disclosure will be described in detail below with reference to the accompanying drawings and in combination with the embodiments.
[0042] It should be noted that the following detailed descriptions are illustrative and are intended to provide further explanation of the present application. Unless otherwise specified, all technical and scientific terms used herein have the same meanings as those commonly understood by those skilled in the art to which the present application belongs.
[0043] For ease of description, spatially relative terms such as "above", "above", "on the upper surface of", "above", etc. may be used herein to describe the spatial positional relationship between a device or feature and other devices or features as shown in the figure. It should be understood that spatially relative terms are intended to include different orientations of the device in use or operation in addition to the orientation described in the figure. For example, if the device in the accompanying drawings is inverted, the device described as "above other devices or structures" or "above other devices or structures" will be positioned as "below other devices or structures" or "below other devices or structures". Thus, the exemplary term "above" may include both "above" and "below". The device may also be positioned in other different ways, rotated 90 degrees or in other orientations, and the spatially relative descriptions used herein are interpreted accordingly.
[0044] Now, exemplary embodiments according to the present disclosure will be described in more detail with reference to the accompanying drawings. However, these exemplary embodiments can be implemented in a variety of different forms and should not be construed as being limited to the embodiments described herein. It should be understood that these embodiments are provided to make the disclosure of the present application thorough and complete, and to fully convey the concepts of these exemplary embodiments to those of ordinary skill in the art. In the accompanying drawings, for clarity, the thickness of the layers and regions is enlarged, and the same reference numerals are used to represent the same devices, and thus their descriptions will be omitted.
[0045] The present invention provides a method for preparing a micro LED device. Figures 1 to 13 , Figure 1 is a flow chart showing a method for preparing a micro LED device according to one embodiment of the present disclosure; Figures 2 to 13 is a schematic diagram showing a preparation process flow of a method for preparing a micro LED device according to an embodiment of the present disclosure.
[0046] like Figure 1As shown, the method for preparing a micro LED device includes the following steps S101-S105.
[0047] Step S101: Obtain a transparent substrate and a micro LED chip structure, wherein the micro LED chip structure comprises a micro LED chip, and the micro LED chip comprises a micro LED unit array composed of a plurality of micro LED units.
[0048] Step S102: a reflective layer is disposed on the transparent substrate, so that the reflective layer includes a first through hole array, the arrangement of the first through hole array corresponds to the arrangement of the micro LED unit array, wherein the first through hole array includes a plurality of groups of first through holes, and the reflective layer is used to reflect the light emitted by the micro LED unit.
[0049] Step S103: Disposing a first barrier layer on the reflective layer, so that the first barrier layer includes a second through hole array, the arrangement of the second through hole array corresponds to the arrangement of the micro LED unit array, wherein the second through hole array includes multiple groups of second through holes corresponding to the multiple groups of first through holes, each group of second through holes includes at least two second through holes, the number of first through holes in each group of first through holes is less than the number of second through holes in each group of second through holes, and the first through hole in each group of first through holes corresponds to part of the second through holes in the corresponding second through hole group.
[0050] Step S104: Filling a photoluminescent material layer in the second through holes in each group of second through holes without a corresponding first through hole, and filling a first light absorbing layer in the corresponding first through holes and second through holes, to obtain a first color conversion structure, wherein the first light absorbing layer is used to partially absorb the light emitted by the micro LED unit, and the color of the light emitted by the micro LED unit is different from the color corresponding to the photoluminescent material layer.
[0051] Step S105: Bonding the side of the first color conversion structure opposite to the transparent substrate to the light emitting side of the micro LED chip to obtain a micro LED device.
[0052] According to the technical solution, a transparent substrate and a micro LED chip can be obtained, a reflective layer is arranged on the transparent substrate and a first barrier layer is arranged on the reflective layer, each group of second through holes included in the first barrier layer includes at least two second through holes, the number of first through holes in each group of first through holes included in the reflective layer is less than the number of second through holes in each group of second through holes, wherein the second through holes correspond to part of the first through holes, a photoluminescent material layer is filled in the second through holes without corresponding first through holes in each group of second through holes, and a first light absorption layer is filled in the corresponding first through holes and second through holes to form a first color conversion structure, and the first color conversion structure is bonded to the light-emitting side of the micro LED chip to form a micro LED device.
[0053] On the one hand, in the micro LED device, the light emitted by the micro LED unit of the micro LED chip excites the material in the photoluminescent material layer to emit light of a color different from that of the light emitted by the micro LED unit. Since the first light absorbing layer can partially absorb the light emitted by the micro LED unit, the light overflow caused by the light emitted by the micro LED unit directly from the micro LED device is reduced, thereby reducing the color deviation and poor color purity caused by the light overflow, thereby improving the balance of light of different colors emitted from the micro LED device, enhancing the color purity of the micro LED, and thereby improving the display effect of the micro LED device.
[0054] On the other hand, since the reflective layer covers the photoluminescent material layer, when a portion of the light emitted by the micro LED unit does not participate in the excitation of the photoluminescent material layer and leaks out through the photoluminescent material layer, the reflective layer can reflect the leaked portion of light back to the photoluminescent material layer and re-participate in the excitation of the photoluminescent material layer, thereby increasing the light participating in the excitation of the photoluminescent material layer, thereby increasing the light output of the color corresponding to the photoluminescent material layer, thereby improving the brightness of the micro LED, and reducing the mixed output of the leaked portion of light and the different color lights emitted by exciting the photoluminescent material layer, thereby improving the color purity of the micro LED, thereby improving the display effect of the micro LED device.
[0055] In step S101, a transparent substrate and a micro LED chip structure may be obtained, wherein the micro LED chip structure includes a micro LED chip, and the micro LED chip includes a micro LED unit array composed of a plurality of micro LED units.
[0056] According to an embodiment of the present disclosure, a transparent substrate and a micro LED chip structure may be first obtained. The transparent substrate may include any applicable substrate such as a glass substrate, a polyimide substrate or a sapphire substrate. The micro LED chip structure includes a micro LED chip, and the micro LED chip includes a micro LED unit array for emitting light. Among them, the micro LED chip may be any micro LED chip suitable for preparing a micro LED device. For example, the structure of the micro LED chip may include a face-up structure, a flip-chip structure or a vertical structure, etc., which are not limited here. Each micro LED unit in the micro LED unit array may include an exposed first semiconductor layer on its light-emitting side. Depending on the type of micro LED device, in some embodiments, the first semiconductor layer may include an N-GaN layer; in other embodiments, the first semiconductor layer may include a P-GaN layer. It is worth noting that the micro LED chip structure may also be obtained in any step before the subsequent step of using the micro LED chip structure.
[0057] Reference Figure 2-Figure 13 ,in Figure 2 FIG. 1 shows a side view of a transparent substrate 101 according to an embodiment of the present disclosure. Figure 2 As shown, the transparent substrate 101 may be, for example, a glass substrate.
[0058] Reference Figure 2-Figure 13 ,in Figure 3 FIG. 4 shows a side view of a micro LED chip structure according to an embodiment of the present disclosure. Figure 3 As shown, the micro LED chip structure includes a micro LED chip 20, and the micro LED chip 20 includes a micro LED unit array 201 composed of micro LED units 2011. Each micro LED unit 2011 in the micro LED unit array 201 includes a first semiconductor layer 20111 such as an N-GaN layer on the light emitting side. Figure 3 As shown, the first semiconductor layer 20111 is common to each micro LED unit 2011 in the micro LED unit array 201 , that is, the first semiconductor layer 20111 is integrated in the micro LED chip 20 .
[0059] In step S102, a reflective layer can be set on the transparent substrate, so that the reflective layer includes a first through hole array, the arrangement of the first through hole array corresponds to the arrangement of the micro LED unit array, wherein the first through hole array includes multiple groups of first through holes, and the reflective layer is used to reflect the light emitted by the micro LED unit.
[0060] According to an embodiment of the present disclosure, after obtaining a transparent substrate, a reflective layer may be disposed on the transparent substrate. The reflective layer may include a distributed Bragg reflector, which may be, for example, a distributed Bragg reflector formed by alternately stacking silicon dioxide layers and titanium dioxide layers, and may also include any material layer for reflecting light emitted by the micro LED unit. In addition, each group of first through holes may include one or two first through holes.
[0061] According to one embodiment of the present disclosure, before the reflective layer is provided on the transparent substrate, the method further includes: providing a second barrier layer on the transparent substrate, so that the second barrier layer includes a third through hole array, the arrangement of the third through hole array corresponds to the arrangement of the micro LED unit array, wherein the third through hole array includes a plurality of groups of third through holes, each group of third through holes includes a first third through hole, a second third through hole and a third third through hole; a first filling step, when the first filling step is completed, a first intermediate structure is obtained, the first filling step includes at least one of the following steps: filling a first filling portion in the first third through hole in each group of third through holes, the first filling portion includes a portion that allows only the first a first filter layer through which light of the first color passes or a second light absorbing layer for partially absorbing light of the third color; a second filling portion is filled in the second third through hole in each group of third through holes, the second filling portion includes a second filter layer that only allows light of the second color to pass or a second light absorbing layer for partially absorbing light of the third color; a third filling portion is filled in the third third through hole in each group of third through holes, the third filling portion includes a third filter layer that only allows light of the third color to pass or a second light absorbing layer for partially absorbing light of the third color, and the first filling portion, the second filling portion and the second light absorbing layer included in the third filling portion are made of the same material as the first light absorbing layer.
[0062] Furthermore, the first filling step further comprises: when there are unfilled third through holes in each group of third through holes, filling the unfilled third through holes with a transparent material.
[0063] Specifically, a reflective layer is arranged on the transparent substrate, so that the reflective layer includes a first through hole array, and the arrangement of the first through hole array corresponds to the arrangement of the micro LED unit array, wherein the first through hole array includes multiple groups of first through holes including: a reflective layer is arranged on the first intermediate structure, and a first through hole array is opened on the reflective layer, so that the first through hole array includes multiple groups of first through holes, each group of first through holes includes a first through hole aligned with the third through hole, and the first through hole exposes the first intermediate structure.
[0064] In this embodiment, the light of the first color refers to the light of the wavelength range corresponding to the first color, the light of the second color refers to the light of the wavelength range corresponding to the second color, and the light of the third color refers to the light of the wavelength range corresponding to the third color. The first color, the second color and the third color can be three primary colors, for example, the first color is red, the second color is green and the third color is blue. The material of the second barrier layer includes a visible light shielding material, which can include, for example, a matte material such as black photoresist, a reflective material such as a metal layer, the material of the second light absorbing layer includes an organic dye, nano absorption particles or an inorganic oxide for absorbing blue light, for example, it can be a zinc oxide nanoparticle photoresist, the material of the first filter layer, the material of the second filter layer and the material of the third filter layer include an organic dye, nano absorption particles or an inorganic oxide.
[0065] Furthermore, before arranging the second barrier layer on the transparent substrate, the method may further include: arranging a third light absorbing layer on the transparent substrate, wherein the third light absorbing layer is used to partially absorb the light of the third color emitted by the micro LED unit, and the material of the third light absorbing layer includes an organic dye, nano absorption particles or inorganic oxide for absorbing blue light, for example, zinc oxide nanoparticle photoresist. Therefore, arranging the second barrier layer on the transparent substrate may include: arranging the second barrier layer on the third light absorbing layer.
[0066] Furthermore, before arranging the reflective layer on the first intermediate structure, the method further includes: arranging a fourth light absorbing layer on the first intermediate structure, wherein the fourth light absorbing layer is used to partially absorb the light of the third color emitted by the micro LED unit, and the material of the fourth light absorbing layer includes an organic dye, nano absorption particles or inorganic oxide for absorbing blue light, for example, zinc oxide nanoparticle photoresist. Therefore, arranging the reflective layer on the first intermediate structure may include: arranging the reflective layer on the fourth light absorbing layer.
[0067] According to another embodiment of the present disclosure, before the reflective layer is provided on the transparent substrate, the method further includes: providing a second barrier layer on the transparent substrate, so that the second barrier layer includes a third through hole array, the arrangement of the third through hole array corresponds to the arrangement of the micro LED unit array, wherein the third through hole array includes a plurality of groups of third through holes, each group of third through holes includes two third through holes; a second filling step, a second intermediate structure is obtained when the second filling step is completed, the second filling step includes at least one of the following steps: filling a fourth filling part in one third through hole in each group of third through holes, the fourth filling part including a fourth filter layer that only allows light of a fourth color to pass through or a second light absorption layer for partially absorbing light of the third color; filling a fifth filling part in another third through hole in each group of third through holes, the fifth filling part including a third filter layer that only allows light of a third color to pass through or a second light absorption layer for partially absorbing light of the third color, and the second light absorption layer included in the fourth filling part and the fifth filling part is made of the same material as the first light absorption layer.
[0068] The second filling step further includes: when there are unfilled third through holes in each group of third through holes, filling the unfilled third through holes with a transparent material.
[0069] Specifically, a reflective layer is provided on the transparent substrate, so that the reflective layer includes a first through hole array, and the arrangement of the first through hole array corresponds to the arrangement of the micro LED unit array, wherein the first through hole array includes multiple groups of first through holes including: a reflective layer is provided on the second intermediate structure, and a first through hole array is opened on the reflective layer, so that the first through hole array includes multiple groups of first through holes, each group of first through holes includes a first through hole aligned with a third through hole, and the first through hole exposes the second intermediate structure.
[0070] In this embodiment, the light of the fourth color refers to the light of the wavelength range corresponding to the fourth color, the fourth color is yellow light and the third color is blue. The material of the second barrier layer includes a visible light shielding material, which may include, for example, a matte material such as a black photoresist, a reflective material such as a metal layer, the material of the second light absorbing layer includes an organic dye, nano-absorption particles or an inorganic oxide for absorbing blue light, for example, zinc oxide nano-particle photoresist, and the material of the fourth filter layer includes an organic dye, nano-absorption particles or an inorganic oxide.
[0071] Reference Figure 2-Figure 13 ,in Figure 4 FIG. 1 shows a side view schematic diagram of a second barrier layer 102 disposed on a transparent substrate 101. Figure 4As shown, the second barrier layer 102 may be, for example, a black photoresist layer, so a black photoresist layer may be coated on a transparent substrate 101 such as a glass substrate by spin coating, and then, for example, a second through hole array 1020 may be opened on the black photoresist layer by photolithography, so that the arrangement of the second through hole array 1020 corresponds to the arrangement of the micro LED unit array 201 to be used later and the transparent substrate 101 is exposed, wherein the second through hole array 1020 includes a plurality of groups of second through holes, each group of second through holes includes a first second through hole 1021, a second second through hole 1022 and a third second through hole 1023. For clarity and simplicity, Figure 4 Only a group of second through holes included in the second through hole array 1020 is shown, and the group of second through holes includes a first second through hole 1021, a second second through hole 1022 and a third second through hole 1023. Figure 4 The number of groups of second through holes and the number of second through holes in each group of second through holes shown in the figure are only for illustration and are not limited here. The second barrier layer 102 such as a black photoresist layer can make the screen appear black when the display device is powered off or turned off.
[0072] Reference Figure 2-Figure 13 ,in Figure 5 A side view schematic diagram of the filling portion filled in each group of second through holes is shown. Figure 4 ,like Figure 5 As shown, a first filling portion is filled in the first second through hole 1021 in each group of second through holes, and the first filling portion may include a first filter layer 1031 that only allows light of a first color, such as red, to pass through; a second filling portion is filled in the second second through hole 1022 in each group of second through holes, and the second filling portion may include a second filter layer 1032 that only allows light of a second color, such as green, to pass through; a third filling portion is filled in the third second through hole 1023 in each group of second through holes, and the third filling portion may include a second light absorption layer 1033 for partially absorbing light of a third color, such as blue, to obtain the following: Figure 5 The first intermediate structure 30 is shown. It should be noted that in other embodiments, when there are unfilled second through holes in each group of second through holes, a transparent material may be filled in the unfilled second through holes to support the portion above the corresponding second through hole in the subsequent preparation process, and the transparent material may be any suitable material such as a transparent resin.
[0073] Reference Figure 2-Figure 13 ,in Figure 6 FIG. 4 shows a side view of a fourth light absorbing layer 104 disposed on the first intermediate structure 30. Figure 6As shown, a fourth light absorption layer 104 is disposed on the first intermediate structure 30 , and the fourth light absorption layer 104 is used to partially absorb the third color light, such as blue, emitted by the micro LED unit, and the fourth light absorption layer 104 is made of the same material as the second light absorption layer 1033 .
[0074] Reference Figure 2-Figure 13 ,in Figure 7 FIG. 1 shows a side view schematic diagram of a reflective layer 105 disposed on the fourth light absorbing layer 104. Figure 7 As shown, a reflective layer 105 such as a distributed Bragg reflector is disposed on the fourth light absorbing layer 104, and a first through hole array is provided on the reflective layer 105, so that the first through hole array includes a plurality of groups of first through holes, each group of first through holes includes a first through hole 1051 aligned with the third through hole 1023, and the first through hole 1051 exposes the fourth light absorbing layer 104. The reflective layer 105 is used to reflect, for example, blue light emitted by the micro LED unit. For clarity and simplicity, Figure 7 Only a group of first through holes included in the first through hole array is shown, and the group of first through holes includes a first through hole 1051, Figure 7 The number of groups of first through holes and the number of first through holes in each group of first through holes shown in the figure are merely illustrative and are not intended to be limiting herein.
[0075] In step S103, a first barrier layer may be provided on the reflective layer, so that the first barrier layer includes a second through hole array, the arrangement of the second through hole array corresponds to the arrangement of the micro LED unit array, wherein the second through hole array includes a plurality of groups of second through holes corresponding to the plurality of groups of first through holes, each group of second through holes includes at least two second through holes, the number of first through holes in each group of first through holes is less than the number of second through holes in each group of second through holes, and the first through holes in each group of first through holes correspond to part of the second through holes in the corresponding second through hole group.
[0076] According to an embodiment of the present disclosure, after preparing the reflective layer, a first barrier layer may be provided on the reflective layer. The first barrier layer may function as a grid, and the interior of the grid may be filled with a corresponding material. In some embodiments, the first barrier layer may include a visible light shielding material, which may include, for example, a matte material such as black photoresist, a reflective material such as a metal layer, etc.
[0077] According to one embodiment of the present disclosure, a first barrier layer is provided on the reflective layer, so that the first barrier layer includes a second through hole array, the arrangement of the second through hole array corresponds to the arrangement of the micro LED unit array, wherein the second through hole array includes a plurality of groups of second through holes corresponding to the plurality of groups of first through holes, each group of second through holes includes at least two second through holes, the number of first through holes in each group of first through holes is less than the number of second through holes in each group of second through holes, and the first through holes in each group of first through holes correspond to part of the second through holes in the corresponding second through hole group, which may include: providing a first barrier layer on the reflective layer; A barrier layer is provided, and a second through hole array is opened on the first barrier layer, so that the second through hole array is aligned with the third through hole array and is located above the third through hole array, and the second through hole array exposes the reflective layer, wherein the second through hole array includes a plurality of groups of second through holes corresponding to the plurality of groups of third through holes, each group of second through holes includes a first second through hole aligned with the first third through hole, a second second through hole aligned with the second third through hole, and a third second through hole aligned with the third third through hole, and the third second through hole is aligned with the first through hole.
[0078] According to another embodiment of the present disclosure, a first barrier layer is disposed on the reflective layer, so that the first barrier layer includes a second through hole array, the arrangement of the second through hole array corresponds to the arrangement of the micro LED unit array, wherein the second through hole array includes a plurality of groups of second through holes corresponding to the plurality of groups of first through holes, each group of second through holes includes at least two second through holes, the number of first through holes in each group of first through holes is less than the number of second through holes in each group of second through holes, and the first through holes in each group of first through holes correspond to part of the second through holes in the corresponding second through hole group, comprising: disposing a first barrier layer on the reflective layer, and opening a second through hole array on the first barrier layer, so that the second through hole array is aligned with the third through hole array and is located above the third through hole array, and the second through hole array exposes the reflective layer, wherein the second through hole array includes a plurality of groups of second through holes corresponding to the plurality of groups of third through holes, each group of second through holes includes two second through holes respectively aligned with two third through holes, and one second through hole in each group of second through holes is aligned with the first through hole.
[0079] Reference Figure 2-Figure 13 ,in Figure 8 FIG. 1 shows a side view schematic diagram of a first barrier layer 106 disposed on the reflective layer 105. Figure 8As shown, the first barrier layer 106 may be, for example, a black photoresist layer, so the black photoresist layer may be coated on the reflective layer 105 by spin coating, and then, for example, a second through hole array 1060 may be opened on the black photoresist layer by photolithography, so that the second through hole array 1060 is aligned with the third through hole array 1020, and the second through hole array 1060 exposes a portion of the reflective layer 105 and the first through hole 1051. The second through hole array 1060 includes a plurality of groups of second through holes corresponding to the plurality of groups of third through holes, and each group of second through holes includes a first second through hole 1061 aligned with the first third through hole 1021, a second second through hole 1062 aligned with the second third through hole 1022, and a third second through hole 1063 aligned with the third third through hole 1023.
[0080] In step S104, a photoluminescent material layer can be filled in the second through holes without corresponding first through holes in each group of second through holes, and a first light absorption layer can be filled in the corresponding first through holes and second through holes to obtain a first color conversion structure, wherein the first light absorption layer is used to partially absorb the light emitted by the micro LED unit, and the color of the light emitted by the micro LED unit is different from the color corresponding to the photoluminescent material layer.
[0081] According to an embodiment of the present disclosure, after obtaining the above-mentioned second through hole array, a photoluminescent material layer and a first light absorbing layer can be filled for the second through hole array. The first light absorbing layer partially absorbs the light emitted by the micro LED unit, so that a part of the light emitted by the micro LED unit is absorbed after passing through the first light absorbing layer, and the remaining light is emitted from the micro LED device. The color of the light emitted by the micro LED unit is different from the color corresponding to the photoluminescent material layer, so that the light emitted from the micro LED light-emitting unit realizes the full-color display of the micro LED device after passing through the photoluminescent material layer.
[0082] According to an embodiment of the present disclosure, each group of first through holes includes one first through hole, each group of second through holes includes three second through holes, a photoluminescent material layer is filled in the second through hole without a corresponding first through hole in each group of second through holes, and a first light absorption layer is filled in the corresponding first through hole and second through hole, wherein the first light absorption layer is used to partially absorb the light emitted by the micro LED unit, and the color of the light emitted by the micro LED unit is different from the color corresponding to the photoluminescent material layer. The method includes: filling a photoluminescent material layer of a first color and a photoluminescent material layer of a second color in two second through holes without a corresponding first through hole in each group of second through holes, respectively, and filling a first light absorption layer in the corresponding first through hole and second through hole, wherein the first light absorption layer is used to partially absorb the light of a third color emitted by the micro LED unit, and the light corresponding to the first color, the light corresponding to the second color, and the light of the third color are synthesized to obtain white light.
[0083] Further, a photoluminescent material layer of a first color and a photoluminescent material layer of a second color are respectively filled in two second through holes without a corresponding first through hole in each group of second through holes, and a first light absorption layer is filled in the corresponding first through hole and second through hole, wherein the first light absorption layer is used to partially absorb the light of a third color emitted by the micro LED unit, and the light corresponding to the first color, the light corresponding to the second color and the light corresponding to the third color are synthesized to obtain white light, including: filling a photoluminescent material layer of a first color in the first second through hole in each group of second through holes, filling a photoluminescent material layer of a second color in the second second through hole in each group of second through holes, and filling the first through hole and the third second through hole with a first light absorption layer, wherein the first light absorption layer is used to partially absorb the light of the third color emitted by the micro LED unit, and the light corresponding to the first color, the light corresponding to the second color and the light corresponding to the third color are synthesized to obtain white light.
[0084] In this embodiment, the first color, the second color and the third color may be three primary colors, for example, the first color is red, the second color is green and the third color is blue. The material of the photoluminescent material layer of the first color and the material of the photoluminescent material layer of the second color include at least one of II-VI group quantum dots, III-V group quantum dots, perovskite quantum dots and carbon quantum dots, and the material of the first light absorbing layer includes organic dyes, nano absorption particles or inorganic oxides for absorbing blue light, for example, zinc oxide nanoparticle photoresist.
[0085] According to another embodiment of the present disclosure, each group of first through holes includes one first through hole, each group of second through holes includes two second through holes, a photoluminescent material layer is filled in the second through hole without a corresponding first through hole in each group of second through holes, and a first light absorption layer is filled in the corresponding first through hole and second through hole, wherein the first light absorption layer is used to partially absorb the light emitted by the micro LED unit, and the color of the light emitted by the micro LED unit is different from the color corresponding to the photoluminescent material layer. The method includes: filling a photoluminescent material layer of a fourth color in the second through hole without a corresponding first through hole in each group of second through holes, and filling the first light absorption layer in the corresponding first through hole and second through hole, wherein the first light absorption layer is used to partially absorb the light of a third color emitted by the micro LED unit, and white light is obtained by synthesizing the light corresponding to the fourth color and the light of the third color.
[0086] In this embodiment, the fourth color is yellow light and the third color is blue. The material of the photoluminescent material layer of the fourth color may include at least one of group II-VI quantum dots, group III-V quantum dots, perovskite quantum dots and carbon quantum dots, and the material of the first light absorption layer may include an organic dye, nano absorption particles or inorganic oxide for absorbing blue light, for example, zinc oxide nanoparticle photoresist.
[0087] According to an embodiment of the present disclosure, after filling a photoluminescent material layer in a second through hole without a corresponding first through hole in each group of second through holes, and filling a first light absorbing layer in the corresponding first through hole and second through hole, the method further includes: providing an insulating layer on the first barrier layer, the photoluminescent material layer and the first light absorbing layer.
[0088] Reference Figure 2-Figure 13 ,in Fig. 9 A schematic side view of a photoluminescent material layer filled in each group of second through holes is shown. Figure 8 ,like Fig. 9 As shown, the first second through hole 1061 in each group of second through holes is filled with a first color photoluminescent material layer 1071, such as red, and the second second through hole 1062 in each group of second through holes is filled with a second color photoluminescent material layer 1072, such as green.
[0089] Reference Figure 2-Figure 13 ,in Fig.10 A side view schematic diagram showing the first light absorbing layer filled in the aligned first through hole and the third second through hole. Figure 8 and Fig. 9 ,like Fig.10As shown, a first light absorbing layer 1073 for absorbing, for example, blue light is filled in the aligned first through hole 1051 and the third second through hole 1063. It is worth noting that the filling sequence of the first color photoluminescent material layer 1071, the second color photoluminescent material layer 1072 and the first light absorbing layer 1073 is only exemplary and is not limited here. The filling sequence of the first color photoluminescent material layer 1071, the second color photoluminescent material layer 1072 and the first light absorbing layer 1073 can be arbitrarily adjusted according to the actual preparation conditions such as specific processes and equipment.
[0090] Reference Figure 2-Figure 13 ,in Fig.11 FIG. 4 is a side view schematic diagram showing an insulating layer disposed on the first barrier layer, the photoluminescent material layer and the first light absorbing layer. Fig.11 As shown, a plasma enhanced chemical vapor deposition (PECVD) method can be used to deposit an insulating layer 108 such as a silicon dioxide layer on the first barrier layer 106, the first photoluminescent material layer 1071, the second photoluminescent material layer 1072 and the first light absorbing layer 1073 to obtain a Fig.11 The first color conversion structure 10 is shown. Of course, the insulating layer may also include any other applicable materials, such as any applicable polymer organic materials and inorganic oxides, and any applicable preparation process may be used to prepare the insulating layer for different materials.
[0091] In step S105, the side of the first color conversion structure opposite to the transparent substrate may be bonded to the light emitting side of the micro LED chip to obtain a micro LED device.
[0092] According to an embodiment of the present disclosure, after obtaining the first color conversion structure, the side of the first color conversion structure opposite to the transparent substrate can be bonded to the light emitting side of the micro LED chip to obtain a micro LED device.
[0093] Furthermore, each micro LED unit in the micro LED unit array includes a first semiconductor layer on the light emitting side, and bonding the side of the first color conversion structure opposite to the transparent substrate to the light emitting side of the micro LED chip includes: bonding the side of the first color conversion structure opposite to the transparent substrate to the first semiconductor layer.
[0094] According to an embodiment of the present disclosure, bonding the side of the first color conversion structure opposite to the transparent substrate to the first semiconductor layer includes: bonding an insulating layer of the first color conversion structure to the first semiconductor layer.
[0095] According to an embodiment of the present disclosure, after bonding the side of the first color conversion structure opposite to the transparent substrate to the light-emitting side of the micro LED chip, the method includes: removing the transparent substrate of the first color conversion structure to obtain a second color conversion structure from the first color conversion structure.
[0096] According to an embodiment of the present disclosure, the micro LED chip structure also includes a driving chip, and the side of the micro LED chip opposite to the light emitting side is arranged on the driving chip, or the micro LED chip structure also includes a driving chip and a flexible circuit board, and the side of the micro LED chip opposite to the light emitting side is arranged on the driving chip to form a micro LED module, and the micro LED module is arranged on the flexible circuit board through the driving chip.
[0097] Reference Figure 2-Figure 13 ,in Fig.12 FIG. 4 shows a side view of bonding the first color conversion structure 10 to the micro LED chip 20 according to one embodiment of the present disclosure. Fig.12 As shown, the insulating layer 108 of the first color conversion structure 10 is bonded to the first semiconductor layer 20111 of the LED chip 20 of the micro LED chip structure to obtain Fig.12 The structure shown.
[0098] Reference Figure 2-Figure 13 ,in Fig.13 FIG. 4 shows a side view of a micro LED device 1 according to an embodiment of the present disclosure. Fig.13 As shown, remove Fig.12 The transparent substrate 101 of the first color conversion structure 10 in the structure shown in FIG. 1 is used to obtain the second color conversion structure 11 through the first color conversion structure 10. Fig.13 The micro LED device 1 is shown.
[0099] Reference Figures 2 to 13It should be understood that the light of the third color, such as blue light, emitted by the micro LED unit 2011 excites the photoluminescent material layer 1071 of the first color, such as red, to emit red light, and the light of the third color, such as blue light, emitted by the micro LED unit 2011 excites the photoluminescent material layer 1072 of the second color, such as green, to emit green light. The light of the third color, such as blue light, emitted by the micro LED unit is partially absorbed after passing through the first light absorption layer 1073, and some of the blue light still passes through the first light absorption layer 1073. The light of the first color, such as red light, the light of the second color, such as green light, and the light of the third color, such as blue light, emitted through the photoluminescent material layer and the first light absorption layer 1073 can be synthesized to obtain white light. Therefore, by providing a first light-absorbing layer that partially absorbs, for example, blue light emitted by the micro LED unit, the blue light overflow caused by the blue light emitted by the micro LED unit directly emitted from the micro LED device can be reduced, thereby reducing the color deviation and poor color purity caused by the blue light overflow, thereby improving the balance of different colors of light emitted from the micro LED device, enhancing the color purity of the micro LED, and further improving the display effect of the micro LED device.
[0100] Furthermore, since the reflective layer 105 covers the photoluminescent material layer, when a portion of the light emitted by the micro LED unit 2011 does not participate in exciting the photoluminescent material layer and passes through the photoluminescent material layer and leaks out, the reflective layer 105 can reflect part of the blue light leaked from the photoluminescent material layer 1071 of the first color, such as red, back to the red photoluminescent material layer and re-participate in exciting the red photoluminescent material layer, and the reflective layer 105 can reflect part of the blue light leaked from the photoluminescent material layer 1072 of the second color, such as green, back to the green photoluminescent material layer and re-participate in exciting the green photoluminescent material layer, thereby increasing the light participating in exciting the photoluminescent material layer, thereby increasing the light output of the color corresponding to the photoluminescent material layer, thereby improving the brightness of the micro LED, and reducing the mixed output of the leaked part of the light and the different color lights emitted by exciting the photoluminescent material layer, thereby improving the color purity of the micro LED, thereby improving the display effect of the micro LED device.
[0101] In addition, since the third third through hole 1023 is aligned with the third second through hole 1063 and the first through hole 1051, and when the second light absorption layer 1033 is filled in the third third through hole 1023, the second light absorption layer 1033 can form a whole with the first light absorption layer 1073 to further enhance the absorption of the third color of light, such as blue light, emitted by the micro LED unit 2011, thereby further reducing the blue light overflow caused by the light emitted by the micro LED unit directly emitted from the micro LED device, thereby further improving the display effect of the micro LED device.
[0102] In addition, regarding the third light absorption layer, on the one hand, the third light absorption layer can further enhance the absorption of the third color light, such as blue light, emitted by the micro LED unit 2011, thereby further reducing the blue light overflow caused by the third color light, such as blue light, emitted by the micro LED unit 2011 directly being emitted from the micro LED device, thereby further improving the display effect of the micro LED device. On the other hand, as described above, the reflective layer 105 is used to reflect the third color light, such as blue light, leaking from the photoluminescent material layer, and the third light absorption layer can absorb the third color light, such as blue light, leaking from the reflective layer 105, thereby preventing the third color light, such as blue light, from being mixed with the first color light, such as red light, and the second color light, such as green light, resulting in insufficient color purity and low saturation, thereby further improving the display effect of the micro LED device.
[0103] In addition, regarding the fourth light absorption layer 104, on the one hand, the fourth light absorption layer 104 can further enhance the absorption of the third color light, such as blue light, emitted by the micro LED unit 2011, thereby further reducing the blue light overflow caused by the third color light, such as blue light, emitted by the micro LED unit 2011 directly emitted from the micro LED device, thereby further improving the display effect of the micro LED device. On the other hand, as described above, the reflective layer 105 is used to reflect the third color light, such as blue light, leaked from the photoluminescent material layer, and the fourth light absorption layer 104 can absorb the third color light, such as blue light, leaked from the reflective layer 105, thereby preventing the third color light, such as blue light, from being mixed with the first color light, such as red light, and the second color light, such as green light, obtained by excitation, resulting in insufficient color purity, thereby further improving the display effect of the micro LED device.
[0104] It is worth noting that, when the first third through hole 1021 is filled with the first filter layer 1031, the second third through hole 1022 is filled with the second filter layer 1032, and the third third through hole is filled with the third filter layer, the first filter layer 1031 only allows light of a first color, such as red light, to pass through, and the first filter layer 1031 will reflect light of a third color, such as blue light, toward the direction of the photoluminescent material layer 1071 of the first color, such as red. The second filter layer 1032 only allows light of a second color, such as green light, to pass through, and the second filter layer 1032 will reflect light of a third color, such as blue light, toward the direction of the photoluminescent material layer 1072 of the second color, such as green. The third filter layer 1031 only allows light of a third color, such as blue light, to pass through, and the third filter layer will reflect light of other colors toward the direction of the first light absorption layer 1073. Therefore, the function of the first filter layer 1031, the second filter layer 1032 and the third filter layer is to reflect light except the light of the corresponding color, which is different from the function of the first absorption layer, the second absorption layer, the third absorption layer and the fourth absorption layer to absorb light.
[0105] The present disclosure also provides a micro LED device.
[0106] like Figure 2-Figure 13As shown, the micro LED device 1 includes a second color conversion structure 11 and a micro LED chip structure, wherein the micro LED chip structure includes a micro LED chip 20, and the micro LED chip 20 includes a micro LED unit array 201 composed of a plurality of micro LED units 2011, wherein the second color conversion structure 11 includes: a first barrier layer 106, wherein the first barrier layer 106 includes a second through hole array 1060, and the arrangement of the second through hole array 1060 corresponds to the arrangement of the micro LED unit array 201, wherein the second through hole array 1060 includes a plurality of groups of second through holes, and each group of second through holes includes at least two second through holes; and a reflective layer 105, wherein the reflective layer 105 is disposed on the first barrier layer 106, and the reflective layer 105 includes a first through hole array, wherein the first through hole array includes a plurality of groups of first through holes corresponding to the plurality of groups of second through holes, and each group of first through holes includes at least two second through holes. The number of first through holes in the hole is less than the number of second through holes in each group of second through holes, and the first through holes in each group of first through holes correspond to part of the second through holes in the corresponding second through hole group, and the reflective layer 105 is used to reflect the light emitted by the micro LED unit 2011; the photoluminescent material layer and the first light absorbing layer 1073, the photoluminescent material layer is filled in the second through hole without the corresponding first through hole in each group of second through holes, the first light absorbing layer 1073 is filled in the corresponding first through hole and second through hole, wherein the first light absorbing layer 1073 is used to partially absorb the light emitted by the micro LED unit 2011, and the color of the light emitted by the micro LED unit 2011 is different from the color corresponding to the photoluminescent material layer, and the first barrier layer 106, the photoluminescent material layer and the first light absorbing layer 1073 of the second color conversion structure 11 are arranged on the light emitting side of the micro LED chip 20.
[0107] According to an embodiment of the present disclosure, each group of first through holes includes a first through hole 1051, each group of second through holes includes a first second through hole 1061, a second second through hole 1062 and a third second through hole 1063, the third second through hole 1063 is aligned with the first through hole 1051, the photoluminescent material layer includes a photoluminescent material layer 1071 of a first color and a photoluminescent material layer 1072 of a second color, the photoluminescent material layer 1071 of the first color is filled in the first second through hole 1061 in each group of second through holes, the photoluminescent material layer 1072 of the second color is filled in the second second through hole 1062 in each group of second through holes, and the first light absorption layer 1073 is filled in the aligned third second through hole 1063 and the first through hole 1051, wherein the first light absorption layer 1073 is used to partially absorb the light of the third color emitted by the micro LED unit 2011, and the light corresponding to the first color, the light corresponding to the second color and the light of the third color are synthesized to obtain white light.
[0108] According to an embodiment of the present disclosure, the second color conversion structure 11 further includes a second barrier layer 102, the second barrier layer 102 is disposed on the reflective layer 105 and includes a third through hole array 1020, the third through hole array 1020 is aligned with the second through hole array 1060 and is located above the second through hole array 1060, wherein the third through hole array 1020 includes a plurality of groups of third through holes corresponding to the plurality of groups of second through holes, each group of third through holes includes a first third through hole 1021 aligned with the first second through hole 1061, a second third through hole 1022 aligned with the second second through hole 1062, and a third third through hole 1023 aligned with the third second through hole 1063, and the second color conversion structure 11 further includes a first filling The invention relates to a method for forming a plurality of third through holes in a plurality of groups of third through holes, wherein the first filling part is filled in the first third through hole in each group of third through holes, and the first filling part includes a first filter layer 1031 that only allows light of the first color to pass through or a second light absorption layer for partially absorbing light of the third color; the second filling part is filled in the second third through hole in each group of third through holes, and the second filling part includes a second filter layer 1032 that only allows light of the second color to pass through or a second light absorption layer for partially absorbing light of the third color; the third filling part is filled in the third third through hole in each group of third through holes, and the third filling part includes a third filter layer that only allows light of the third color to pass through or a second light absorption layer 1033 that partially absorbs light of the third color. The second light absorption layer included in the first filling part, the second filling part and the third filling part is made of the same material as the first light absorption layer.
[0109] According to an embodiment of the present disclosure, when there are unfilled third through holes in each group of third through holes, the second color conversion structure 11 further includes a transparent material, and the transparent material is filled in the unfilled third through holes.
[0110] According to an embodiment of the present disclosure, the first color is red, the second color is green, and the third color is blue.
[0111] According to an embodiment of the present disclosure, each group of first through holes includes a first through hole, each group of second through holes includes two second through holes, one second through hole in each group of second through holes is aligned with the first through hole, the photoluminescent material layer includes a photoluminescent material layer of a fourth color, the photoluminescent material layer of the fourth color is filled in the second through hole that is not aligned with the first through hole, and the first light absorption layer is filled in the aligned second through hole and the first through hole, wherein the first light absorption layer is used to partially absorb the third color of light emitted by the micro LED unit, and the light of the fourth color and the light of the third color are synthesized to obtain white light.
[0112] According to an embodiment of the present disclosure, the second color conversion structure further includes a second barrier layer, which is disposed on the reflective layer and includes a third through hole array, which is aligned with the second through hole array and located above the second through hole array, wherein the third through hole array includes a plurality of groups of third through holes corresponding to the plurality of groups of second through holes, and each group of third through holes includes two third through holes, and the second color conversion structure further includes at least one of a fourth filling portion and a fifth filling portion, wherein: the fourth filling portion is filled in the third through hole above the second through hole filled with the photoluminescent material layer of the fourth color, and the fourth filling portion includes a fourth filter layer that only allows light of the fourth color to pass through or a second light absorption layer for partially absorbing light of the third color; the fifth filling portion is filled in the third through hole above the first through hole filled with the first light absorption layer, and the fifth filling portion includes a third filter layer that only allows light of the third color to pass through or a second light absorption layer for partially absorbing light of the third color, and the second light absorption layer included in the fourth filling portion and the fifth filling portion is made of the same material as the first light absorption layer.
[0113] According to an embodiment of the present disclosure, when there are unfilled third through holes in each group of third through holes, the color conversion structure further includes a transparent material, and the transparent material is filled in the unfilled third through holes.
[0114] According to an embodiment of the present disclosure, the fourth color is yellow and the third color is blue.
[0115] According to an embodiment of the present disclosure, each micro LED unit 2011 in the micro LED unit array 201 includes a first semiconductor layer 20111 on the light emitting side, and the first barrier layer 106, the photoluminescent material layer and the first light absorption layer 1073 of the second color conversion structure 11 are arranged on the first semiconductor layer 20111.
[0116] According to an embodiment of the present disclosure, the second color conversion structure 11 further includes an insulating layer 108, which is disposed on the first barrier layer 106, the photoluminescent material layer and the first light absorption layer 1073, and the insulating layer 108 is disposed on the first semiconductor layer 20111. The second color conversion structure 11 is disposed on the first semiconductor layer 20111 through the insulating layer 108.
[0117] According to an embodiment of the present disclosure, the second color conversion structure further includes a third light absorption layer, which is disposed on the second barrier layer, wherein the third light absorption layer is used to partially absorb the light emitted by the micro LED unit, and the third light absorption layer is made of the same material as the first light absorption layer.
[0118] According to an embodiment of the present disclosure, the second color conversion structure 11 further includes a fourth light absorbing layer 104, the fourth light absorbing layer 104 is disposed on the reflective layer 105, and the second barrier layer 102 is disposed on the fourth light absorbing layer 104, wherein the fourth light absorbing layer 104 is used to partially absorb the light emitted by the micro LED unit 2011, and the fourth light absorbing layer 104 is made of the same material as the first light absorbing layer 1073.
[0119] According to an embodiment of the present disclosure, the micro LED chip structure 11 also includes a driving chip, and the side of the micro LED chip 20 opposite to the light emitting side is arranged on the driving chip, or the micro LED chip structure also includes a driving chip and a flexible circuit board, and the side of the micro LED chip 20 opposite to the light emitting side is arranged on the driving chip to form a micro LED module, and the micro LED module is arranged on the flexible circuit board through the driving chip.
[0120] According to an embodiment of the present disclosure, the material of the first barrier layer 106 and the material of the second barrier layer 102 include visible light shielding materials, the material of the first color photoluminescent material layer 1071 and the material of the second color photoluminescent material layer 1072 include at least one of II-VI group quantum dots, III-V group quantum dots, perovskite quantum dots and carbon quantum dots, the material of the first light absorption layer 1073 and the material of the second light absorption layer 1033 include organic dyes, nano absorption particles or inorganic oxides for absorbing blue light, the material of the first filter layer 1031, the material of the second filter layer 1032 and the material of the third filter layer include organic dyes, nano absorption particles or inorganic oxides, and the reflective layer 105 includes a distributed Bragg reflective film.
[0121] It is worth noting that any relevant description about the micro LED device in the above-mentioned micro LED device preparation method (including but not limited to technical features and their functions, explanations, etc.) can be applied to the micro LED device disclosed in the present invention.
[0122] According to embodiments of the present disclosure, the pixel size in the micro LED device is typically less than 50 microns.
[0123] The present disclosure also provides a display device, which includes the above-mentioned type LED device. The display device can be applied to flexible electronic devices to realize technologies such as augmented reality (AR), virtual reality (VR), extended reality (XR), and mixed reality (MR). For example, the micro LED device can be the projection part of an electronic device, such as a projector, a head-up display (HUD), etc.; for another example, the micro LED device can also be the display part of an electronic device, such as a smart phone, a smart watch, a laptop, a tablet computer, a driving recorder, a navigator, a head-mounted device, and any other device with a display screen.
[0124] It should be noted that the terms used herein are only for describing specific embodiments and are not intended to limit the exemplary embodiments according to the present application. As used herein, unless the context clearly indicates otherwise, the singular form is also intended to include the plural form. In addition, it should be understood that when the terms "comprise" and / or "include" are used in this specification, it indicates the presence of features, steps, operations, devices, components and / or combinations thereof.
[0125] It should be understood that "one embodiment" or "an embodiment" mentioned throughout the specification means that specific features, structures or characteristics related to the embodiment are included in at least one embodiment of the present application. Therefore, "in one embodiment" or "in an embodiment" appearing throughout the specification does not necessarily refer to the same embodiment. In addition, these specific features, structures or characteristics can be combined in one or more embodiments in any suitable manner. It should be understood that in various embodiments of the present application, the size of the serial number of each step / process mentioned above does not mean the order of execution, and the execution order of each step / process should be determined by its function and internal logic, and should not constitute any limitation on the implementation process of the embodiment of the present application. In addition, the serial numbers of the embodiments of the present application mentioned above are only for description and do not represent the advantages and disadvantages of the embodiments.
[0126] It should be noted that the terms "first", "second", etc. in the specification and claims of the present application and the above-mentioned drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence. It should be understood that the data used in this way can be interchangeable where appropriate, so that the embodiments of the present application described herein can be implemented in an order other than those illustrated or described herein, for example. In addition, the terms "including" and "having" and any of their variations are intended to cover non-exclusive inclusions, for example, a process, method, system, product or device that includes a series of steps or units is not necessarily limited to those steps or units that are clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices.
[0127] The above description is only a preferred embodiment of the present disclosure and is not intended to limit the present disclosure. For those skilled in the art, the present disclosure may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present disclosure shall be included in the protection scope of the present disclosure.
Claims
1. A method for preparing a micro LED device, wherein: The method comprises: Obtaining a transparent substrate and a micro LED chip structure, wherein the micro LED chip structure comprises a micro LED chip, and the micro LED chip comprises a micro LED unit array composed of a plurality of micro LED units; Disposing a reflective layer on the transparent substrate, so that the reflective layer includes a first through hole array, the arrangement of the first through hole array corresponds to the arrangement of the micro LED unit array, wherein the first through hole array includes a plurality of groups of first through holes, and the reflective layer is used to reflect light emitted by the micro LED unit; Disposing a first barrier layer on the reflective layer, so that the first barrier layer includes a second through hole array, the arrangement of the second through hole array corresponds to the arrangement of the micro LED unit array, wherein the second through hole array includes a plurality of groups of second through holes corresponding to the plurality of groups of first through holes, each group of second through holes includes at least two second through holes, the number of first through holes in each group of first through holes is less than the number of second through holes in each group of second through holes, and the first through holes in each group of first through holes correspond to part of the second through holes in the corresponding second through hole group; Filling a photoluminescent material layer in the second through holes in each group of second through holes that do not have a corresponding first through hole, and filling a first light absorption layer in the corresponding first through holes and second through holes, to obtain a first color conversion structure, wherein the first light absorption layer is used to partially absorb the light emitted by the micro LED unit, and the color of the light emitted by the micro LED unit is different from the color corresponding to the photoluminescent material layer; The side of the first color conversion structure opposite to the transparent substrate is bonded to the light emitting side of the micro LED chip to obtain a micro LED device.
2. The method for preparing a micro LED device according to claim 1, wherein: Each group of first through holes includes one first through hole, each group of second through holes includes three second through holes, a photoluminescent material layer is filled in the second through hole in each group of second through holes that does not have a corresponding first through hole, and a first light absorption layer is filled in the corresponding first through hole and second through hole, wherein the first light absorption layer is used to partially absorb the light emitted by the micro LED unit, and the color of the light emitted by the micro LED unit is different from the color corresponding to the photoluminescent material layer, including: Two second through holes in each group of second through holes without corresponding first through holes are filled with a first color photoluminescent material layer and a second color photoluminescent material layer, respectively, and a first light absorption layer is filled in the corresponding first through holes and second through holes, wherein the first light absorption layer is used to partially absorb the third color light emitted by the micro LED unit, and the light corresponding to the first color, the light corresponding to the second color and the light corresponding to the third color are synthesized to obtain white light.
3. The method for preparing a micro LED device according to claim 2, wherein: Before providing the reflective layer on the transparent substrate, the method further comprises: Disposing a second barrier layer on the transparent substrate, so that the second barrier layer includes a third through hole array, the arrangement of the third through hole array corresponds to the arrangement of the micro LED unit array, wherein the third through hole array includes a plurality of groups of third through holes, each group of third through holes includes a first third through hole, a second third through hole and a third third through hole; A first filling step, when the first filling step is completed, a first intermediate structure is obtained, and the first filling step includes at least one of the following steps: Filling a first filling portion in a first third through hole in each group of third through holes, wherein the first filling portion includes a first filter layer that allows only light of the first color to pass through or a second light absorption layer for partially absorbing light of the third color; Filling a second filling portion in a second third through hole in each group of third through holes, wherein the second filling portion includes a second filter layer that allows only light of the second color to pass through or a second light absorption layer for partially absorbing light of the third color; A third filling portion is filled in a third third through hole in each group of third through holes, wherein the third filling portion includes a third filter layer that allows only light of a third color to pass through. The second light absorption layer included in the first filling part and the second filling part is made of the same material as the first light absorption layer.
4. The method for preparing a micro LED device according to claim 3, wherein: The first filling step further comprises: When there are unfilled third through holes in each group of third through holes, the unfilled third through holes are filled with a transparent material.
5. The method for preparing a micro LED device according to claim 3, wherein: A reflective layer is disposed on the transparent substrate, so that the reflective layer includes a first through hole array, the arrangement of the first through hole array corresponds to the arrangement of the micro LED unit array, wherein the first through hole array includes a plurality of groups of first through holes including: A reflective layer is disposed on the first intermediate structure, and a first through hole array is opened on the reflective layer, so that the first through hole array includes a plurality of groups of first through holes, each group of first through holes includes a first through hole aligned with the third through hole, and the first through hole exposes the first intermediate structure, A first barrier layer is disposed on the reflective layer, so that the first barrier layer includes a second through hole array, the arrangement of the second through hole array corresponds to the arrangement of the micro LED unit array, wherein the second through hole array includes a plurality of groups of second through holes corresponding to the plurality of groups of first through holes, each group of second through holes includes at least two second through holes, the number of first through holes in each group of first through holes is less than the number of second through holes in each group of second through holes, and the first through holes in each group of first through holes correspond to part of the second through holes in the corresponding second through hole group, including: A first barrier layer is disposed on the reflective layer, and a second through hole array is provided on the first barrier layer, so that the second through hole array is aligned with the third through hole array and is located above the third through hole array, and the second through hole array exposes the reflective layer, wherein the second through hole array includes a plurality of groups of second through holes corresponding to the plurality of groups of third through holes, each group of second through holes includes a first second through hole aligned with the first third through hole, a second second through hole aligned with the second third through hole, and a third second through hole aligned with the third third through hole, the third second through hole being aligned with the first through hole, two second through holes in each group of second through holes without corresponding first through holes are filled with a first color photoluminescent material layer and a second color photoluminescent material layer respectively, and a first light absorption layer is filled in the corresponding first through holes and second through holes, wherein the first light absorption layer is used to partially absorb the third color light emitted by the micro LED unit, and the white light obtained by synthesizing the light corresponding to the first color, the light corresponding to the second color, and the light corresponding to the third color comprises: A photoluminescent material layer of a first color is filled in the first second through hole in each group of second through holes, a photoluminescent material layer of a second color is filled in the second second through hole in each group of second through holes, and a first light absorption layer is filled in the aligned first through hole and the third second through hole, wherein the first light absorption layer is used to partially absorb light of a third color emitted by the micro LED unit, and the light corresponding to the first color, the light corresponding to the second color, and the light of the third color are synthesized to obtain white light.
6. The method for preparing a micro LED device according to claim 1, wherein: Each group of first through holes includes one first through hole, each group of second through holes includes two second through holes, a photoluminescent material layer is filled in the second through hole in each group of second through holes that does not correspond to the first through hole, and a first light absorption layer is filled in the corresponding first through hole and second through hole, wherein the first light absorption layer is used to partially absorb the light emitted by the micro LED unit, and the color of the light emitted by the micro LED unit is different from the color corresponding to the photoluminescent material layer, including: A photoluminescent material layer of a fourth color is filled in the second through holes without a corresponding first through hole in each group of second through holes, and a first light absorption layer is filled in the corresponding first through holes and second through holes, wherein the first light absorption layer is used to partially absorb the light of a third color emitted by the micro LED unit, and white light is obtained by synthesizing the light of the fourth color and the light of the third color.
7. The method for preparing a micro LED device according to claim 6, wherein: Before providing the reflective layer on the transparent substrate, the method further comprises: Disposing a second barrier layer on the transparent substrate, so that the second barrier layer includes a third through hole array, the arrangement of the third through hole array corresponds to the arrangement of the micro LED unit array, wherein the third through hole array includes a plurality of groups of third through holes, and each group of third through holes includes two third through holes; A second filling step, when the second filling step is completed, a second intermediate structure is obtained, and the second filling step includes at least one of the following steps: Filling a fourth filling portion in one third through hole in each group of third through holes, wherein the fourth filling portion includes a fourth filter layer that allows only light of a fourth color to pass through; A fifth filling portion is filled in another third through hole in each group of third through holes, wherein the fifth filling portion includes a third filter layer that allows only light of a third color to pass therethrough.
8. The method for preparing a micro LED device according to claim 7, wherein: The second filling step further comprises: When there are unfilled third through holes in each group of third through holes, the unfilled third through holes are filled with a transparent material.
9. The method for preparing a micro LED device according to claim 7, wherein: A reflective layer is disposed on the transparent substrate, so that the reflective layer includes a first through hole array, the arrangement of the first through hole array corresponds to the arrangement of the micro LED unit array, wherein the first through hole array includes a plurality of groups of first through holes including: A reflective layer is disposed on the second intermediate structure, and a first through hole array is opened on the reflective layer, so that the first through hole array includes a plurality of groups of first through holes, each group of first through holes includes a first through hole aligned with a third through hole, and the first through holes expose the second intermediate structure, A first barrier layer is disposed on the reflective layer, so that the first barrier layer includes a second through hole array, the arrangement of the second through hole array corresponds to the arrangement of the micro LED unit array, wherein the second through hole array includes a plurality of groups of second through holes corresponding to the plurality of groups of first through holes, each group of second through holes includes at least two second through holes, the number of first through holes in each group of first through holes is less than the number of second through holes in each group of second through holes, and the first through holes in each group of first through holes correspond to part of the second through holes in the corresponding second through hole group, including: A first barrier layer is disposed on the reflective layer, and a second through hole array is opened on the first barrier layer, so that the second through hole array is aligned with the third through hole array and is located above the third through hole array, and the second through hole array exposes the reflective layer, wherein the second through hole array includes a plurality of groups of second through holes corresponding to the plurality of groups of third through holes, each group of second through holes includes two second through holes respectively aligned with two third through holes, and one second through hole in each group of second through holes is aligned with the first through hole.
10. The method for preparing a micro LED device according to claim 1, wherein: Each micro LED unit in the micro LED unit array includes a first semiconductor layer on the light emitting side, and bonding the side of the first color conversion structure opposite to the transparent substrate to the light emitting side of the micro LED chip includes: bonding the side of the first color conversion structure opposite to the transparent substrate to the first semiconductor layer.
11. The method for preparing a micro LED device according to claim 10, wherein: After filling the photoluminescent material layer in the second through holes in each group of second through holes without corresponding first through holes, and filling the first light absorbing layer in the corresponding first through holes and second through holes, the method further comprises: providing an insulating layer on the first barrier layer, the photoluminescent material layer and the first light absorbing layer, Bonding a side of the first color conversion structure opposite to the transparent substrate to the first semiconductor layer includes: bonding an insulating layer of the first color conversion structure to the first semiconductor layer.
12. The method for preparing a micro LED device according to claim 1, wherein: After bonding the side of the first color conversion structure opposite to the transparent substrate to the light emitting side of the micro LED chip, the method includes: The transparent substrate of the first color conversion structure is removed, and a second color conversion structure is obtained from the first color conversion structure.
13. The method for preparing a micro LED device according to claim 3, wherein: Before the second barrier layer is provided on the transparent substrate, the method further comprises: providing a third light absorbing layer on the transparent substrate, wherein the third light absorbing layer is used to partially absorb the light of the third color emitted by the micro LED unit, and the third light absorbing layer is made of the same material as the first light absorbing layer. Providing a second barrier layer on the transparent substrate includes: providing the second barrier layer on the third light absorbing layer.
14. The method for preparing a micro LED device according to claim 5, wherein: Before providing the reflective layer on the first intermediate structure, the method further includes: providing a fourth light absorbing layer on the first intermediate structure, wherein the fourth light absorbing layer is used to partially absorb the light of the third color emitted by the micro LED unit, and the fourth light absorbing layer is made of the same material as the first light absorbing layer. Providing a reflective layer on the first intermediate structure includes: providing a reflective layer on the fourth light absorbing layer.
15. A micro LED device, wherein: The micro LED device comprises a second color conversion structure and a micro LED chip structure, wherein the micro LED chip structure comprises a micro LED chip, and the micro LED chip comprises a micro LED unit array composed of a plurality of micro LED units, wherein the second color conversion structure comprises: A first barrier layer, the first barrier layer comprising a second through hole array, the arrangement of the second through hole array corresponds to the arrangement of the micro LED unit array, wherein the second through hole array comprises a plurality of groups of second through holes, and each group of second through holes comprises at least two second through holes; A reflective layer, the reflective layer is disposed on the first barrier layer, the reflective layer comprises a first through hole array, wherein the first through hole array comprises a plurality of groups of first through holes corresponding to the plurality of groups of second through holes, the number of first through holes in each group of first through holes is less than the number of second through holes in each group of second through holes, and the first through holes in each group of first through holes correspond to part of the second through holes in the corresponding second through hole group, and the reflective layer is used to reflect the light emitted by the micro LED unit; a photoluminescent material layer and a first light absorbing layer, wherein the photoluminescent material layer is filled in the second through hole without the corresponding first through hole in each group of second through holes, and the first light absorbing layer is filled in the corresponding first through hole and second through hole, wherein the first light absorbing layer is used to partially absorb the light emitted by the micro LED unit, and the color of the light emitted by the micro LED unit is different from the color corresponding to the photoluminescent material layer, The first barrier layer, the photoluminescent material layer and the first light absorbing layer of the second color conversion structure are arranged on the light emitting side of the micro LED chip.
16. The micro LED device according to claim 15, wherein: Each group of first through holes includes a first through hole, each group of second through holes includes a first second through hole, a second second through hole and a third second through hole, the third second through hole is aligned with the first through hole, the photoluminescent material layer includes a photoluminescent material layer of a first color and a photoluminescent material layer of a second color, the photoluminescent material layer of the first color is filled in the first second through hole in each group of second through holes, the photoluminescent material layer of the second color is filled in the second second through hole in each group of second through holes, and the first light absorption layer is filled in the aligned third second through hole and the first through hole, wherein the first light absorption layer is used to partially absorb the light of the third color emitted by the micro LED unit, and the light corresponding to the first color, the light corresponding to the second color and the light of the third color are synthesized to obtain white light.
17. The micro LED device according to claim 16, wherein: The second color conversion structure further includes a second barrier layer, which is disposed on the reflective layer and includes a third through-hole array, the third through-hole array is aligned with the second through-hole array and is located above the second through-hole array, wherein the third through-hole array includes a plurality of groups of third through-holes corresponding to the plurality of groups of second through-holes, each group of third through-holes includes a first third through-hole aligned with the first second through-hole, a second third through-hole aligned with the second second through-hole, and a third third through-hole aligned with the third second through-hole, The second color conversion structure further includes at least one of a first filling portion, a second filling portion, and a third filling portion, wherein: The first filling part is filled in the first third through hole in each group of third through holes, and the first filling part includes a first filter layer that only allows light of the first color to pass through or a second light absorption layer for partially absorbing light of the third color; The second filling part is filled in the second third through hole in each group of third through holes, and the second filling part includes a second filter layer that only allows light of the second color to pass through or a second light absorption layer for partially absorbing light of the third color; The third filling part is filled in the third third through hole in each group of third through holes, and the third filling part includes a third filter layer that only allows light of a third color to pass through. The second light absorption layer included in the first filling part and the second filling part is made of the same material as the first light absorption layer.
18. The micro LED device according to claim 17, wherein: When there are unfilled third through holes in each group of third through holes, the second color conversion structure further includes a transparent material, and the transparent material is filled in the unfilled third through holes.
19. The micro LED device according to claim 17, wherein: The first color is red, the second color is green and the third color is blue.
20. The micro LED device according to claim 15, wherein: Each group of first through holes includes a first through hole, each group of second through holes includes two second through holes, one second through hole in each group of second through holes is aligned with the first through hole, the photoluminescent material layer includes a photoluminescent material layer of a fourth color, the photoluminescent material layer of the fourth color is filled in the second through hole that is not aligned with the first through hole, and the first light absorption layer is filled in the aligned second through hole and the first through hole, wherein the first light absorption layer is used to partially absorb the third color light emitted by the micro LED unit, and the light of the fourth color and the light of the third color are synthesized to obtain white light.
21. The micro LED device according to claim 20, wherein: The second color conversion structure further includes a second barrier layer, which is disposed on the reflective layer and includes a third through-hole array, the third through-hole array is aligned with the second through-hole array and is located above the second through-hole array, wherein the third through-hole array includes a plurality of groups of third through-holes corresponding to the plurality of groups of second through-holes, each group of third through-holes includes two third through-holes, and the second color conversion structure further includes at least one of a fourth filling portion and a fifth filling portion, wherein: The fourth filling part is filled in the third through hole above the second through hole filled with the photoluminescent material layer of the fourth color, and the fourth filling part includes a fourth filter layer that only allows light of the fourth color to pass through; The fifth filling portion is filled in the third through hole above the first through hole filled with the first light absorbing layer, and the fifth filling portion includes a third filter layer that only allows light of a third color to pass through.
22. The micro LED device according to claim 21, wherein: When there are unfilled third through holes in each group of third through holes, the color conversion structure further includes a transparent material, and the transparent material is filled in the unfilled third through holes.
23. The micro LED device according to claim 21, wherein: The fourth color is yellow and the third color is blue.
24. The micro LED device according to claim 15, wherein: Each micro LED unit in the micro LED unit array includes a first semiconductor layer on the light emitting side, and a first barrier layer, a photoluminescent material layer and a first light absorbing layer of the second color conversion structure are arranged on the first semiconductor layer.
25. The micro LED device according to claim 24, wherein: The second color conversion structure further includes an insulating layer, which is disposed on the first barrier layer, the photoluminescent material layer and the first light absorption layer, and the insulating layer is disposed on the first semiconductor layer.
26. The micro LED device according to claim 17, wherein: The second color conversion structure further includes a third light absorption layer, which is disposed on the second barrier layer, wherein the third light absorption layer is used to partially absorb the light emitted by the micro LED unit, and the third light absorption layer is made of the same material as the first light absorption layer.
27. The micro LED device according to claim 17, wherein: The second color conversion structure further includes a fourth light absorbing layer, which is disposed on the reflective layer, and the second barrier layer is disposed on the fourth light absorbing layer, wherein the fourth light absorbing layer is used to partially absorb the light emitted by the micro LED unit, and the fourth light absorbing layer is made of the same material as the first light absorbing layer.
28. The micro LED device according to claim 15, wherein: The micro LED chip structure further includes a driving chip, and a side of the micro LED chip opposite to the light emitting side is arranged on the driving chip. Alternatively, the micro LED chip structure further includes a driving chip and a flexible circuit board, the side of the micro LED chip opposite to the light emitting side is arranged on the driving chip to form a micro LED module, and the micro LED module is arranged on the flexible circuit board through the driving chip.
29. The micro LED device according to claim 17, wherein: The material of the first barrier layer and the material of the second barrier layer include visible light shielding materials, the material of the first color photoluminescent material layer and the material of the second color photoluminescent material layer include at least one of II-VI group quantum dots, III-V group quantum dots, perovskite quantum dots and carbon quantum dots, the material of the first light absorption layer and the material of the second light absorption layer include organic dyes, nano absorption particles or inorganic oxides for absorbing blue light, the material of the first filter layer, the material of the second filter layer and the material of the third filter layer include organic dyes, nano absorption particles or inorganic oxides, and the reflective layer includes a distributed Bragg reflective film.
30. A display device, wherein: The display device comprises the micro LED device according to any one of claims 15 to 29.