Silicon-based OLED (Organic Light Emitting Diode) structure suitable for improving visual angle and manufacturing method of silicon-based OLED structure

Abstract

The invention relates to a silicon-based OLED (Organic Light Emitting Diode) structure suitable for improving a visual angle and a manufacturing method of the silicon-based OLED structure. The method comprises the following steps: providing an OLED assembly; spin-coating a first color filter layer on the front surface of the OLED component; exposing and developing the first color filter layer to form a plurality of first color filter units at first preset intervals; spin-coating a second color filter layer among the plurality of first color filter units; exposing and developing the second color filter layer to form a plurality of second color filter units at second preset intervals; and spin-coating a third color filter layer on the front surface of the OLED component, wherein the third color filter layer is made of a non-red filter material. According to the invention, on the premise of not changing the light-emitting structure of the device, the problem that the visual angle is reddish is solved by changing the manufacturing process of the Color Filter.

Description

Technical Field

[0001] The present invention relates to the technical field of OLED chips, and in particular to a silicon-based OLED structure suitable for improving viewing angle and a manufacturing method thereof. Background Art

[0002] The current traditional color filter (CF) process is to evenly coat red, green, and blue photosensitive resins on the OLED substrate, and use the centrifugal effect of rotation to ensure full coverage. Subsequently, the non-contact photolithography machine and photomask are used for exposure to selectively change the properties of the photosensitive resin. After exposure, the light-receiving part is removed by spraying developer to form a pattern. Finally, the residue is removed by pure water rinsing and nitrogen drying to complete the CF layer production. Figure 1 shown.

[0003] However, when light is emitted from the CF structure, the large visual color will be reddish (e.g. Figure 2 However, for devices that require a wide viewing angle and a color shift, such as night vision devices, the reddish cast is easily detected. Summary of the invention

[0004] In view of the above-mentioned deficiencies in the prior art, the purpose of the present application is to provide a silicon-based OLED structure suitable for improving viewing angle and a method for manufacturing the same, in order to solve the problem of OLED having a reddish cast at a large viewing angle.

[0005] In a first aspect, the present application provides a method for manufacturing a silicon-based OLED structure suitable for improving viewing angle, comprising:

[0006] Providing an OLED component;

[0007] Spin coating a first color filter layer on the front surface of the OLED component;

[0008] Exposing and developing the first color filter layer to form a plurality of first color filter units with a first preset interval;

[0009] Spin coating a second color filter layer between the first color filter units;

[0010] exposing and developing the second color filter layer to form a plurality of second color filter units with a second preset interval;

[0011] Spin-coating a third color filter layer on the front side of the OLED component, wherein the third color filter layer includes a plurality of third color filter units located between the first color filter unit and the second color filter unit and a third color filter sublayer located above the first color filter unit, the second color filter unit and the third color filter unit;

[0012] The third color filter layer is exposed and developed to form a plurality of third color filter units; the orthographic projection of the third color filter unit on the OLED component covers the pixel isolation unit, and the material of the third color filter unit is not a red filter material.

[0013] In a possible embodiment, the method provides an OLED component, including:

[0014] Providing a substrate, the substrate comprising a display driving circuit;

[0015] Forming a plurality of metal anode units spaced a predetermined distance apart and a pixel isolation unit located between adjacent metal anode units on the substrate;

[0016] A light-emitting structure is evaporated on the substrate; wherein the light-emitting structure covers the metal anode unit and the pixel isolation unit;

[0017] An inorganic film packaging layer is deposited on the light emitting structure.

[0018] In a possible embodiment, spin coating a first color filter layer on the front surface of the OLED component includes:

[0019] A first color filter layer is spin-coated on the inorganic film packaging layer.

[0020] In a possible embodiment, the first color filter unit is a red filter unit.

[0021] In a possible embodiment, the second color filter unit is a blue color filter unit; and the third color filter unit is a green color filter unit.

[0022] In a possible embodiment, the second color filter unit is a green filter unit; and the third color filter unit is a blue filter unit.

[0023] In a second aspect, the present application further provides a silicon-based OLED structure suitable for improving viewing angle, comprising:

[0024] OLED components;

[0025] A color filter layer, the color filter layer comprising a plurality of first color filter units, second color filter units and third color filter units that are repeatedly arranged;

[0026] Wherein, a plurality of the first color filter units are arranged on the front side of the OLED component according to a first preset interval;

[0027] A plurality of the second color filter units are arranged between the first color filter units according to a second preset interval;

[0028] The plurality of third color filter units are arranged between the first color filter unit and the second color filter unit;

[0029] A third color filter subunit, a plurality of the third color filter subunits are arranged on the color filter layer, and the orthographic projections on the OLED component cover the pixel isolation unit, and the material of the third color filter subunit is not a red filter material.

[0030] In a possible embodiment, the OLED component includes:

[0031] A substrate, the substrate comprising a display driving circuit, a plurality of metal anode units spaced apart by a predetermined distance, and a pixel isolation unit located between adjacent metal anode units;

[0032] A light emitting structure, wherein the light emitting structure covers the metal anode unit and the pixel isolation unit;

[0033] An inorganic film encapsulation layer is disposed on the light emitting structure.

[0034] In a possible embodiment, the first color filter unit is a red filter unit, the second color filter unit is a blue filter unit, and the third color filter unit is a green filter unit.

[0035] In a possible embodiment, the first color filter unit is a red filter unit, the second color filter unit is a green filter unit, and the third color filter unit is a blue filter unit.

[0036] Beneficial effects:

[0037] The present application provides a silicon-based OLED structure suitable for improving viewing angle and a manufacturing method thereof. After a color filter film layer is formed by exposure and development, a third color filter sub-unit is further manufactured on the color filter film layer. The material of the third color filter sub-unit is not a red filter material, so that the problem of red viewing angle is solved by changing the manufacturing process of the Color Filter without changing the light-emitting structure of the OLED device. BRIEF DESCRIPTION OF THE DRAWINGS

[0038] Figure 1 This is a schematic diagram of the structure of a traditional silicon-based OLED;

[0039] Figure 2 This is a scatter plot of the traditional silicon-based OLED structure at a wide viewing angle;

[0040] Figure 3 A schematic diagram of a process for manufacturing a silicon-based OLED structure suitable for improving viewing angle provided in an embodiment of the present application;

[0041] Figure 4 for Figure 3 A schematic diagram of the process of manufacturing an OLED component in a method for manufacturing a silicon-based OLED structure suitable for improving viewing angle is shown;

[0042] Figure 5 for Figure 4 A schematic diagram of the structure of the light-emitting structure in the OLED component shown;

[0043] Figure 6 for Figure 4 A structural schematic diagram of the process of manufacturing an OLED component is shown;

[0044] Figure 7 for Figure 3 A schematic structural diagram of a process for manufacturing a first color filter layer in a method for manufacturing a silicon-based OLED structure suitable for improving viewing angle;

[0045] Figure 8 For Figure 7 A schematic diagram of the structure of the process of exposure and development of the prepared first color filter layer;

[0046] Fig. 9 For Figure 8 A schematic diagram of the process structure of manufacturing the second color filter layer based on the above;

[0047] Fig.10 For Fig. 9 A schematic structural diagram of the exposure and development process of the prepared second color filter layer;

[0048] Fig.11 For Fig.10 A schematic diagram of the structure of the process of manufacturing the third color filter unit and the third color filter sub-layer based on the present invention;

[0049] Fig.12 For Fig.11 A schematic diagram of the structure of the process of exposure and development of the prepared third color filter layer;

[0050] Fig.13 A schematic structural diagram of a silicon-based OLED structure suitable for improving viewing angle provided in an embodiment of the present application;

[0051] Fig.14 for Fig.13 The scatter plot of the silicon-based OLED structure suitable for viewing angle improvement at a large viewing angle is shown;

[0052] Fig.15 A schematic structural diagram of another silicon-based OLED structure suitable for improving viewing angle provided in an embodiment of the present application. DETAILED DESCRIPTION

[0053] The technical solutions in the embodiments of the present invention will be described clearly and completely below in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative work are within the scope of protection of the present invention.

[0054] The disclosure of the present invention provides many different embodiments or examples to realize different structures of the present invention. In order to simplify the disclosure of the present invention, the components and settings of specific examples are described in the present invention. Of course, they are only examples, and the purpose is not to limit the present invention. In addition, the present invention can repeat reference numbers and / or reference letters in different examples, and this repetition is for the purpose of simplicity and clarity, which itself does not indicate the relationship between the various embodiments and / or settings discussed. In addition, the present invention provides various specific examples of processes and materials, but those of ordinary skill in the art can be aware of the application of other processes and / or the use of other materials.

[0055] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those generally understood by those skilled in the art to which the present application belongs. The terms used herein in the specification of the present application are only for the purpose of describing specific embodiments and are not intended to limit the present application. Generally, the terms can be understood at least in part according to the usage of the present invention. For example, the term "one or more" used in the present invention depends at least in part on the present invention and can be used to describe any component, structure or feature in a singular form, or can be used to describe a combination of components, structures or features in a plural form. Similarly, terms such as "one", "an" or "the" can also be understood at least in part to convey singular usage or convey plural usage depending on the present invention. In addition, the term "based on..." can be understood as not necessarily intended to convey a set of exclusive factors, but at least in part depending on the present invention can instead allow the presence of additional factors that do not necessarily have to be explicitly described.

[0056] It should be easily understood that the meanings of “on,” “over,” and “on…” in the present invention should be interpreted in the broadest manner, so that “on…” means not only “directly on something,” but also means “on something” including the presence of intermediate components or layers therebetween, and “on something” or “on something” means not only “on something” or “on something,” but also includes the meaning of “on something” or “on something” without any intermediate components or layers therebetween.

[0057] Additionally, for ease of description, spatially relative terms such as "below," "beneath," "lower," "above," "upper," etc. may be used herein to describe the relationship of one element or component to another element or component as shown in the drawings. The spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientations depicted in the drawings. The device may be otherwise oriented, rotated 90 degrees or at other orientations, and the spatially relative descriptors used herein may likewise be interpreted accordingly.

[0058] The term "layer" used in the present invention refers to a material portion including an area with a certain thickness. The layer can extend over the entire lower or upper structure, or can have a degree less than the scope of the lower or upper structure. In addition, the layer can be a region of a homogeneous or inhomogeneous continuous structure, and its thickness is less than the thickness of the continuous structure. For example, the layer can be located between the top surface and the bottom surface of the continuous structure or between any pair of horizontal planes therebetween. The layer can extend horizontally, vertically and / or along a tapered surface. The substrate can be a layer, one or more layers can be included therein, and / or one or more layers can be provided thereon, above and / or below. A layer can include multiple layers. For example, the semiconductor layer can include one or more doped or undoped semiconductor layers, and can have the same or different materials.

[0059] refer to Figure 3 , is a schematic flow chart of a method for manufacturing a silicon-based OLED structure suitable for improving viewing angle provided in an embodiment of the present application, the method comprising:

[0060] 101: Provide an OLED component.

[0061] For example, Figure 4 As shown, step 101 includes:

[0062] 1011: Provide a substrate.

[0063] In this embodiment, the substrate includes a display driving circuit.

[0064] It is understandable that the substrate is pre-arranged with a display driving circuit, such as an AM driving circuit or a PM driving circuit, which is not specifically limited here.

[0065] 1012: Forming a plurality of metal anode units spaced a predetermined distance apart and a pixel isolation unit located between adjacent metal anode units on the substrate.

[0066] It should be understood that the display driving circuit is used to connect the metal anode unit.

[0067] It is understandable that the specific spacing distance between the metal anode units can be set according to actual needs and is not specifically limited here.

[0068] It can be understood that the metal anode units can be distinguished according to pixels and set as red metal anode units (R-Anode), green metal anode units (G-Anode) and blue metal anode units (B-Anode), the red metal anode unit corresponding to the red sub-pixel, the green metal anode unit corresponding to the green sub-pixel, and the blue metal anode unit corresponding to the blue sub-pixel.

[0069] Optionally, in this embodiment, the material of the pixel isolation unit is not specifically limited. For example, in this embodiment, the material of the pixel isolation unit (PDL) is preferably silicon oxide (SiO) material or silicon nitride (Si N) material, the silicon oxide (SiO) material is preferably SiO2, and the silicon nitride (Si N) material is preferably Si3N4.

[0070] Optionally, in this embodiment, in the vertical direction, the length of the upper surface of the pixel isolation unit is greater than the length of the upper surface of the metal anode unit, so that the pixel isolation unit covers the edge of the metal anode unit.

[0071] It can be understood that the pixel isolation unit can be formed by evaporation, and the specific process is not specifically limited in this embodiment.

[0072] 1013: Vapor-deposit a light-emitting structure on the substrate.

[0073] Wherein, the light emitting structure is covered on the metal anode unit and the pixel isolation unit.

[0074] As an implementation, the light emitting structure may be a light emitting structure that emits blue light or a light emitting structure that emits white light. For example, the blue phosphorescent layer is deposited on the metal anode unit by evaporating a blue phosphorescent OLED material to emit blue light.

[0075] For example, the light emitting structure (EV) can be composed of three colors of RGB to form a white light emitting structure, and its specific interlayer structure is as follows: Figure 5 shown.

[0076] 1014: Depositing an inorganic film encapsulation layer on the light-emitting structure.

[0077] As an implementation method, the inorganic film encapsulation layer is deposited on the transparent cathode layer by chemical vapor deposition and atomic layer deposition.

[0078] Optionally, the inorganic film encapsulation layer is made of a water and oxygen barrier material, for example, a silicon oxide material, a silicon nitride material or an aluminum oxide material. Specifically, the silicon oxide material may be SiO2, the silicon nitride material may be Si3N4, and the aluminum oxide material may be Al2O3.

[0079] It should be understood that the above materials are only examples and not limitations.

[0080] Optionally, depositing an inorganic film encapsulation layer on the light-emitting structure includes: sputtering a transparent cathode layer on the light-emitting structure, and depositing the inorganic film encapsulation layer on the transparent cathode layer.

[0081] It is understandable that the transparent cathode layer can be formed by sputtering or evaporation, which is not specifically limited herein.

[0082] Optionally, in this embodiment, the material of the transparent cathode layer is not specifically limited.

[0083] For example, Figure 6 As shown, metal anode units Anode and pixel isolation units PDL located between adjacent metal anode units Anode are formed on the CMOS substrate 10, a light emitting structure EV is evaporated on the CMOS substrate 10, and finally an inorganic film encapsulation layer TFE is formed on the light emitting structure EV.

[0084] 102: Spin-coat a first color filter layer on the front surface of the OLED component.

[0085] Optionally, the first color filter layer is made of a red filter material.

[0086] For example, Figure 7 As shown, a red filter material is spin-coated on the front side of the OLED component to form a first color filter layer.

[0087] 103: Expose and develop the first color filter layer to form a plurality of first color filter units with a first preset interval.

[0088] Optionally, the first preset distance is the distance between two adjacent first color filter units.

[0089] Optionally, the size of the first preset spacing is the size of 2 pixel sub-units, and its specific value is not specifically limited here.

[0090] For example, Figure 8 As shown, in Figure 7 UV irradiation exposure is performed on the basis of, and then development is performed to remove the exposed parts, thereby forming a plurality of first color filter units 20 spaced at a fixed distance.

[0091] 104: Spin-coat a second color filter layer between the first color filter units.

[0092] Optionally, the second color filter layer is made of a blue filter material.

[0093] For example, Fig. 9 As shown, in Figure 8 The spin coating is performed on the basis of the blue filter material, and after the spin coating, the spin-coated blue filter material is filled between the first color filter units 20 .

[0094] That is, the blue filter material spin-coated on the first color filter units 20 is removed by spin coating first and then scraping, thereby ensuring that the blue filter material is filled between the first color filter units 20 .

[0095] In a possible embodiment, the material of the second color filter layer may also be a green filter material.

[0096] 105: Expose and develop the second color filter layer to form a plurality of second color filter units with a second preset interval.

[0097] Optionally, the second preset spacing may be equal to the first preset spacing, or may be half of the first preset spacing. For example, the spacing between the second color filter unit at the current position and the first color filter unit at the next position is the size of one pixel, and the spacing between the second color filter unit at the current position and the second color filter unit at the next position is the size of two pixels. No specific limitation is made here.

[0098] It should be noted that the specific process of step 105 can refer to the process of the first color filter unit, and will not be described in detail here.

[0099] For example, Fig.10 As shown, in Fig. 9 On the basis of, UV irradiation exposure is performed, and then development is performed to remove the exposed portion, thereby forming a plurality of second color filter units 30 spaced at a fixed distance.

[0100] It should be understood that when UV irradiation is performed, exposure is performed according to a pre-designed mask, so that the exposure area is accurately controlled to form a desired pattern structure. The specific process is not described in detail here. Exposure and development can be performed with reference to the general process in the art.

[0101] 106: Spin-coat a third color filter layer on the front surface of the OLED component.

[0102] In this embodiment, the third color filter layer includes a plurality of third color filter units located between the first color filter unit and the second color filter unit and a third color filter sublayer located above the first color filter unit, the second color filter unit and the third color filter unit.

[0103] Optionally, the third color filter layer is made of green filter material.

[0104] For example, Fig.11 As shown, in Fig.10 On the basis of the above, the green filter material is continuously spin-coated on the inorganic film encapsulation layer TFE to form a third color filter unit 40 and a third color filter sub-layer 50 between the first color filter unit and the second color filter unit.

[0105] Optionally, the thickness of the third color filter sublayer 50 is smaller than the thickness of the third color filter unit 40 .

[0106] It should be understood that the first color filter unit and the second color filter unit mentioned above do not refer to the two filter units in one RGB pixel, but refer to the front and rear filter units of two adjacent RGB pixels, such as the second color filter unit in the first RGB pixel and the first color filter unit in the second RGB pixel.

[0107] It should be noted that, in the above process, there is no gap between the first color filter unit and the second color filter unit when they are in the same RGB pixel.

[0108] 107: Expose and develop the third color filter layer to form a plurality of third color filter units.

[0109] In this embodiment, the orthographic projection of the third color filter sub-unit on the OLED component covers the pixel isolation unit, and the material of the third color filter sub-unit is not a red filter material.

[0110] For example, Fig.12 As shown, in Fig.11 On the basis of, the green filter layer (ie, the third color filter layer 50) is exposed and developed, so as to form a plurality of third color filter units 41 on the color filter layer (composed of the first color filter unit, the second color filter unit and the third color filter unit).

[0111] In a possible embodiment, after step 105, the method for manufacturing a silicon-based OLED structure suitable for improving viewing angle further includes: depositing a second inorganic encapsulation film layer on the third color filter unit.

[0112] Optionally, the second inorganic packaging film layer may also be deposited on the third color filter unit by chemical vapor deposition and atomic layer deposition.

[0113] Optionally, the material of the second inorganic film encapsulation layer is a water and oxygen barrier material, for example, the material of the second inorganic film encapsulation layer is a silicon oxide material, a silicon nitride material or an aluminum oxide material. Specifically, the silicon oxide material may be SiO2, the silicon nitride material may be Si3N4, and the aluminum oxide material may be Al2O3.

[0114] It should be understood that the above materials are only examples and not limitations.

[0115] In a possible embodiment, the above-mentioned method for manufacturing a silicon-based OLED structure suitable for improving viewing angle further includes: forming a flat layer on the second inorganic encapsulation film layer; and providing a glass cover plate, wherein the glass cover plate is disposed on the flat layer.

[0116] Optionally, the planar layer is an organic material with a low refractive index, which is not specifically limited herein.

[0117] It can be understood that, in this embodiment, after the color filter film layer is formed by exposure and development, a third color filter sub-unit is further manufactured on the color filter film layer. The material of the third color filter sub-unit is not a red filter material, so that the problem of red viewing angle can be solved by changing the manufacturing process of the Color Filter without changing the light-emitting structure of the OLED device.

[0118] refer to Fig.13 As shown, based on the same inventive concept, the present application also provides a silicon-based OLED structure suitable for improving viewing angle, including: an OLED component; a color filter layer, wherein the color filter layer includes a plurality of first color filter units 20, second color filter units 30 and third color filter units 40 that are repeatedly arranged;

[0119] Wherein, a plurality of the first color filter units 20 are arranged on the front side of the OLED component according to a first preset interval;

[0120] A plurality of the second color filter units 30 are arranged between the first color filter units 20 according to a second preset interval;

[0121] The plurality of third color filter units 40 are disposed between the first color filter unit 20 and the second color filter unit 30;

[0122] A third color filter unit 41 , wherein a plurality of the third color filter units 41 are disposed on the color filter layer, and the orthographic projections on the OLED component cover the pixel isolation unit, and the material of the third color filter unit 41 is not a red filter material.

[0123] In a possible embodiment, the OLED component includes: a substrate 10, a light emitting structure EV and an inorganic film encapsulation layer TFE.

[0124] The substrate 10 includes a display driving circuit, a plurality of metal anode units Anode spaced apart by a predetermined distance, and a pixel isolation unit PDL located between adjacent metal anode units Anode.

[0125] It is understandable that the substrate 10 is a CMOS substrate, and the CMOS substrate is pre-set with a display driving circuit, such as an AM driving circuit or a PM driving circuit, which is not specifically limited here.

[0126] It is understandable that the specific spacing distance between the metal anode units Anode can be set according to actual needs and is not specifically limited here.

[0127] It can be understood that the metal anode unit Anode can be distinguished according to pixels and set as a red metal anode unit (R-Anode), a green metal anode unit (G-Anode) and a blue metal anode unit (B-Anode). The red metal anode unit corresponds to the red sub-pixel, the green metal anode unit corresponds to the green sub-pixel, and the blue metal anode unit corresponds to the blue sub-pixel.

[0128] Optionally, in this embodiment, the material of the pixel isolation unit PDL is not specifically limited. For example, in this embodiment, the material of the pixel isolation unit PDL is preferably silicon oxide (SiO) material or silicon nitride (SiN) material, the silicon oxide (SiO) material is preferably SiO2, and the silicon nitride (SiN) material is preferably Si3N4.

[0129] Optionally, in this embodiment, in the vertical direction, the length of the upper surface of the pixel isolation unit PDL is greater than the length of the upper surface of the metal anode unit Anode, so that the pixel isolation unit PDL covers the edge of the metal anode unit Anode.

[0130] It can be understood that the pixel isolation unit PDL can be formed by evaporation, and the specific process is not specifically limited in this embodiment.

[0131] In this embodiment, the light emitting structure EV is covered on the metal anode unit Anode and the pixel isolation unit PDL.

[0132] In this embodiment, the inorganic film encapsulation layer TFE is disposed on the light emitting structure EV.

[0133] It should be noted that the inorganic film encapsulation layer TFE can be formed on the transparent cathode layer 30 by chemical vapor deposition and atomic layer deposition, which is not specifically limited here.

[0134] Optionally, the inorganic film encapsulation layer TFE is made of a water and oxygen barrier material, for example, the inorganic film encapsulation layer TFE is made of a silicon oxide material, a silicon nitride material or an aluminum oxide material. Specifically, the silicon oxide material may be SiO2, the silicon nitride material may be Si3N4, and the aluminum oxide material may be Al2O3.

[0135] It should be understood that the above materials are only examples and not limitations.

[0136] Optionally, the first color filter unit 20 is a red filter unit, the second color filter unit 30 is a blue filter unit, and the third color filter unit 40 is a green filter unit. Fig.14 As shown, the above structure can effectively solve the problem of reddish viewing angle, making the wide viewing angle greenish.

[0137] Optionally, the first color filter unit 20 is a red filter unit, the second color filter unit 30 is a green filter unit, and the third color filter unit 40 is a blue filter unit.

[0138] In a possible embodiment, Fig.15 As shown, the silicon-based OLED structure suitable for improving viewing angle further includes: a second inorganic encapsulation film layer TFE2 , wherein the second inorganic encapsulation film layer TFE2 is disposed on the third color filter unit 41 .

[0139] Optionally, the second inorganic encapsulation film layer TFE2 may also be deposited on the third color filter unit 41 by chemical vapor deposition and atomic layer deposition.

[0140] Optionally, the material of the second inorganic film encapsulation layer TFE2 is a water and oxygen barrier material, for example, the material of the second inorganic film encapsulation layer TFE2 is a silicon oxide material, a silicon nitride material or an aluminum oxide material. Specifically, the silicon oxide material can be SiO2, the silicon nitride material can be Si3N4, and the aluminum oxide material can be Al2O3.

[0141] It should be understood that the above materials are only examples and not limitations.

[0142] Continue to refer to Fig.15 The silicon-based OLED structure suitable for improving viewing angle further includes: a flat layer OC, the flat layer OC is arranged on the second inorganic encapsulation film layer TFE2; and a glass cover plate CG, the glass cover plate CG is arranged on the flat layer OC.

[0143] Optionally, the material of the planar layer OC is an organic material with a low refractive index, which is not specifically limited herein.

[0144] In summary, the present application provides a silicon-based OLED structure suitable for improving viewing angle and a method for manufacturing the same. After a color filter film layer is formed by exposure and development, a third color filter sub-unit is further manufactured on the color filter film layer. The material of the third color filter sub-unit is not a red filter material, thereby solving the problem of red viewing angle by changing the manufacturing process of the Color Filter without changing the light-emitting structure of the OLED device.

[0145] It should be understood that the application of the present invention is not limited to the above examples. For ordinary technicians in this field, improvements or changes can be made based on the above description. All these improvements and changes should fall within the scope of protection of the claims attached to the present invention.

Claims

1. A method for manufacturing a silicon-based OLED structure suitable for improving viewing angle, characterized in that: include: Providing an OLED component; Spin coating a first color filter layer on the front surface of the OLED component; Exposing and developing the first color filter layer to form a plurality of first color filter units with a first preset interval; Spin coating a second color filter layer between the first color filter units; exposing and developing the second color filter layer to form a plurality of second color filter units with a second preset interval; Spin-coating a third color filter layer on the front side of the OLED component, wherein the third color filter layer includes a plurality of third color filter units located between the first color filter unit and the second color filter unit and a third color filter sublayer located above the first color filter unit, the second color filter unit and the third color filter unit; The third color filter layer is exposed and developed to form a plurality of third color filter units; the orthographic projection of the third color filter unit on the OLED component covers the pixel isolation unit, and the material of the third color filter unit is not a red filter material.

2. The method for manufacturing a silicon-based OLED structure suitable for improving viewing angle according to claim 1, characterized in that: The invention provides an OLED component, comprising: Providing a substrate, the substrate comprising a display driving circuit; Forming a plurality of metal anode units spaced a predetermined distance apart and a pixel isolation unit located between adjacent metal anode units on the substrate; A light-emitting structure is evaporated on the substrate; wherein the light-emitting structure covers the metal anode unit and the pixel isolation unit; An inorganic film packaging layer is deposited on the light emitting structure.

3. The method for manufacturing a silicon-based OLED structure suitable for improving viewing angle according to claim 2, characterized in that: The method of spin coating a first color filter layer on the front surface of the OLED component comprises: A first color filter layer is spin-coated on the inorganic film packaging layer.

4. The method for manufacturing a silicon-based OLED structure suitable for improving viewing angle according to any one of claims 1 to 3, characterized in that: The first color filter unit is a red color filter unit.

5. The method for manufacturing a silicon-based OLED structure suitable for improving viewing angle according to claim 4, characterized in that: The second color filter unit is a blue color filter unit; and the third color filter unit is a green color filter unit.

6. The method for manufacturing a silicon-based OLED structure suitable for improving viewing angle according to claim 4, characterized in that: The second color filter unit is a green color filter unit; the third color filter unit is a blue color filter unit.

7. A silicon-based OLED structure suitable for improving viewing angle, characterized in that: include: OLED components; A color filter layer, the color filter layer comprising a plurality of first color filter units, second color filter units and third color filter units that are repeatedly arranged; Wherein, a plurality of the first color filter units are arranged on the front side of the OLED component according to a first preset interval; A plurality of the second color filter units are arranged between the first color filter units according to a second preset interval; The plurality of third color filter units are arranged between the first color filter unit and the second color filter unit; A third color filter subunit, a plurality of the third color filter subunits are arranged on the color filter layer, and the orthographic projections on the OLED component cover the pixel isolation unit, and the material of the third color filter subunit is not a red filter material.

8. The silicon-based OLED structure suitable for improving viewing angle according to claim 7, characterized in that: The OLED component comprises: A substrate, the substrate comprising a display driving circuit, a plurality of metal anode units spaced apart by a predetermined distance, and a pixel isolation unit located between adjacent metal anode units; A light emitting structure, wherein the light emitting structure covers the metal anode unit and the pixel isolation unit; An inorganic film encapsulation layer is disposed on the light emitting structure.

9. The silicon-based OLED structure suitable for improving viewing angle according to claim 7 or 8, characterized in that: The first color filter unit is a red filter unit, the second color filter unit is a blue filter unit, and the third color filter unit is a green filter unit.

10. The silicon-based OLED structure suitable for improving viewing angle according to claim 7 or 8, characterized in that: The first color filter unit is a red filter unit, the second color filter unit is a green filter unit, and the third color filter unit is a blue filter unit.

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