Perovskite solar cell preparation method

Abstract

The invention relates to the technical field of solar cell manufacturing, in particular to a preparation method of a perovskite solar cell. The preparation method of the perovskite solar cell comprises the following steps: providing a substrate; at least one side surface of the substrate is provided with a conductive film; forming a hole transport layer; forming a hole transport layer on the surface of one side of the substrate away from the conductive film; the hole transport layer is a NiOx hole transport layer; forming a modification layer; a modification layer is formed on the surface of the side, away from the substrate, of the hole transport layer, and the modification layer is an N, N, N ', N'-tetra-(3-methylphenyl)-3, 3 '-dimethylbenzidine modification layer; forming a perovskite absorption layer; forming a perovskite absorption layer on the surface of one side, far away from the hole transport layer, of the modification layer; forming an electron transport layer; forming an electron transport layer on the surface of one side, far away from the modification layer, of the perovskite absorption layer; forming a metal electrode; and forming metal electrodes on the surface of one side, far away from the perovskite absorption layer, of the electron transport layer and the surface of one side, with the conductive film, of the substrate.

Description

Technical Field

[0001] The present invention relates to the technical field of solar cell manufacturing, and in particular to a method for preparing a perovskite solar cell. Background Art

[0002] Finding an efficient, stable and low-cost hole transport material has become one of the research hotspots in the field of perovskite solar cells. Inorganic P-type semiconductors have the characteristics of suitable energy levels, high hole mobility, high chemical properties and low production costs, and can be competent for hole transport layers. Nickel oxide (NiO X ) is a wide bandgap P-type semiconductor with a cubic crystal structure (bandgap is about 3.6eV), which has the advantages of deep valence band (-5.4eV), high chemical stability and low production cost. NiO X As a hole transport layer material, NiO has the advantages of good stability and matching the perovskite valence band. X There are also disadvantages such as poor interface contact with the perovskite absorption layer and poor conductivity. Therefore, a solution is needed to solve the problem of NiO X The interface contact between the hole transport layer and the perovskite absorption layer is poor, resulting in poor conductivity. Summary of the invention

[0003] Therefore, the present invention provides a method for preparing a perovskite solar cell to solve the problem of NiO X The interface contact between the hole transport layer and the perovskite absorption layer is poor, resulting in poor conductivity.

[0004] The present invention provides a method for preparing a perovskite solar cell, comprising the following steps: providing a substrate; at least one side of the substrate has a conductive film; forming a hole transport layer; forming a hole transport layer on a side of the substrate away from the conductive film; the hole transport layer is NiO x A hole transport layer; forming a modified layer; forming a modified layer on the surface of the hole transport layer away from the substrate, wherein the modified layer is a N,N,N',N'-tetrakis-(3-methylphenyl)-3,3'-dimethylbenzidine modified layer; forming a perovskite absorption layer; forming a perovskite absorption layer on the surface of the modified layer away from the hole transport layer; forming an electron transport layer; forming an electron transport layer on the surface of the perovskite absorption layer away from the modified layer; forming a metal electrode; forming a metal electrode on the surface of the electron transport layer away from the perovskite absorption layer and on the surface of the substrate having a conductive film.

[0005] Optionally, in the step of forming the modification layer, the method of forming the modification layer includes thermal spraying; the thermal spraying step includes: placing the substrate on a heating table for preheating, and using a spray gun to spray N,N,N',N'-tetrakis-(3-methylphenyl)-3,3'-dimethylbenzidine solution on the side surface of the substrate away from the conductive film.

[0006] Optionally, the temperature of the heating table during preheating is 100° C.-200° C.; the preheating heating time is 10 min-30 min; and the concentration of the N,N,N',N'-tetrakis-(3-methylphenyl)-3,3'-dimethylbenzidine solution is 0.5 mg / mL-4 mg / mL.

[0007] Optionally, the solvent of the N,N,N',N'-tetrakis-(3-methylphenyl)-3,3'-dimethylbenzidine solution includes one or more of methanol, ethanol, isopropanol, DMF, DMSO or NMP.

[0008] Optionally, the conductive film is an ITO film; the substrate is one of a HJT cell, a CIGS cell or a TopCon cell; or, the substrate is conductive glass.

[0009] Optionally, in the step of forming the hole transport layer, the preparation method of the hole transport layer includes one or more of spin coating, ALD deposition or PVD sputtering.

[0010] Optionally, the step of forming a perovskite absorption layer includes the following steps: providing a perovskite precursor; using the perovskite precursor to form a perovskite precursor layer on the surface of the modified layer away from the hole transport layer; heating and annealing the perovskite precursor layer to form the perovskite absorption layer; wherein the method of forming the perovskite precursor layer is spin coating, scraping, slit coating or thermal spraying; the heating annealing temperature is 100°C-150°C; the heating annealing time is 10min-60min.

[0011] Optionally, the step of forming a perovskite absorption layer includes the following steps: providing a perovskite precursor; and evaporating the perovskite precursor on a surface of the modified layer away from the hole transport layer to form the perovskite absorption layer.

[0012] Optionally, the electron transport layer includes a TiO2 layer, a SnO2 layer, a WO 3-x One or more of a ZnO layer, a PCBM layer, a C60 layer or a BCP layer; in the step of forming the electron transport layer, the method of forming the electron transport layer includes spin coating, ALD deposition, PVD sputtering or evaporation.

[0013] Optionally, the metal electrode includes one or more of an Au electrode, an Ag electrode, a Cu electrode or an Al electrode; in the step of forming the metal electrode, the method of forming the metal electrode includes at least one of screen printing, vacuum sputtering, vacuum evaporation or atomic layer deposition.

[0014] The beneficial effects of the present invention are:

[0015] The method for preparing a perovskite solar cell provided by the present invention comprises forming a modified layer on the surface of a hole transport layer away from the substrate, wherein the modified layer is an N,N,N',N'-tetrakis-(3-methylphenyl)-3,3'-dimethylbenzidine modified layer. X A modified layer of N,N,N',N'-tetrakis-(3-methylphenyl)-3,3'-dimethylbenzidine is arranged between the hole transport layer and the perovskite absorption layer. N,N,N',N'-tetrakis-(3-methylphenyl)-3,3'-dimethylbenzidine has excellent carrier transport performance, which can effectively improve the carrier transport performance of the hole transport layer, thereby significantly improving the performance of the device. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] In order to more clearly illustrate the specific implementation methods of the present invention or the technical solutions in the prior art, the drawings required for use in the specific implementation methods or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are some implementation methods of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0017] Figure 1 A schematic diagram of a process for preparing a perovskite solar cell according to an embodiment of the present invention;

[0018] Figure 2 A schematic diagram of the structure of a perovskite solar cell prepared by a method for preparing a perovskite solar cell according to an embodiment of the present invention. DETAILED DESCRIPTION

[0019] To solve the NiO X The hole transport layer and the perovskite absorption layer have poor interface contact and poor conductivity. The present invention provides a method for preparing a perovskite solar cell, comprising the following steps: providing a substrate; at least one side of the substrate has a conductive film; forming a hole transport layer; forming a hole transport layer on a side of the substrate away from the conductive film; the hole transport layer is NiO xA hole transport layer; forming a modified layer; forming a modified layer on the surface of the hole transport layer away from the substrate, wherein the modified layer is a N,N,N',N'-tetrakis-(3-methylphenyl)-3,3'-dimethylbenzidine (HMTPD, CAS: 105465-14-3) modified layer; forming a perovskite absorption layer; forming a perovskite absorption layer on the surface of the modified layer away from the hole transport layer; forming an electron transport layer; forming an electron transport layer on the surface of the perovskite absorption layer away from the modified layer; forming a metal electrode; forming a metal electrode on the surface of the electron transport layer away from the perovskite absorption layer and on the surface of the substrate having the conductive film.

[0020] The technical solution of the present invention will be described clearly and completely below in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0021] In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., indicating the orientation or positional relationship, are based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as limiting the present invention. In addition, the terms "first", "second", and "third" are used for descriptive purposes only, and cannot be understood as indicating or implying relative importance.

[0022] In the description of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, it can also be the internal connection of two components, it can be a wireless connection, or it can be a wired connection. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0023] In addition, the technical features involved in the different embodiments of the present invention described below can be combined with each other as long as they do not conflict with each other.

[0024] Example 1

[0025] refer to Figure 1 and Figure 2 This embodiment provides a method for preparing a perovskite solar cell, comprising the following steps:

[0026] A substrate 100 is provided; at least one surface of the substrate has a conductive film 101 .

[0027] Forming a hole transport layer 200; forming a hole transport layer 200 on a side of the substrate 100 away from the conductive film 101; the hole transport layer 200 is NiO x Hole transport layer.

[0028] A modified layer 300 is formed; the modified layer 300 is formed on the surface of the hole transport layer 200 away from the substrate 100, and the modified layer 300 is a N,N,N',N'-tetrakis-(3-methylphenyl)-3,3'-dimethylbenzidine modified layer.

[0029] A perovskite absorption layer 400 is formed; the perovskite absorption layer 400 is formed on the surface of the modification layer 300 away from the hole transport layer 200.

[0030] An electron transport layer 500 is formed; the electron transport layer 500 is formed on the surface of the perovskite absorption layer 400 away from the modification layer 300.

[0031] A metal electrode 600 is formed; the metal electrode 600 is formed on the surface of the electron transport layer 500 away from the perovskite absorption layer 400 and the surface of the substrate 100 having the conductive film 101 .

[0032] The method for preparing a perovskite solar cell provided in this embodiment forms a modified layer 300 on the surface of the hole transport layer 200 away from the substrate 100, wherein the modified layer 300 is a N,N,N',N'-tetrakis-(3-methylphenyl)-3,3'-dimethylbenzidine modified layer. X A modified layer of N,N,N',N'-tetrakis-(3-methylphenyl)-3,3'-dimethylbenzidine is disposed between the hole transport layer and the perovskite absorption layer 400. N,N,N',N'-tetrakis-(3-methylphenyl)-3,3'-dimethylbenzidine has excellent carrier transport performance, and can effectively improve the carrier transport performance of the hole transport layer, thereby significantly improving the performance of the device.

[0033] Furthermore, in the step of forming the modification layer 300, the method of forming the modification layer includes thermal spraying; the step of thermal spraying includes: placing the substrate on a heating table for preheating, and using a spray gun to spray N,N,N',N'-tetrakis-(3-methylphenyl)-3,3'-dimethylbenzidine solution on the side of the substrate away from the conductive film.

[0034] Specifically, the temperature of the heating table during preheating is 100° C.-200° C.; the preheating heating time is 10 min-30 min; and the concentration of the N,N,N',N'-tetrakis-(3-methylphenyl)-3,3'-dimethylbenzidine solution is 0.5 mg / mL-4 mg / mL.

[0035] Further, the solvent of the N,N,N',N'-tetrakis-(3-methylphenyl)-3,3'-dimethylbenzidine solution includes one or more of methanol, ethanol, isopropanol, DMF, DMSO or NMP.

[0036] Further, the conductive film 101 is an ITO film; the substrate 100 is one of a HJT cell, a CIGS cell or a TopCon cell; or, the substrate 100 is conductive glass.

[0037] Furthermore, in the step of forming the hole transport layer 200, the preparation method of the hole transport layer includes one or more of spin coating, ALD deposition or PVD sputtering.

[0038] Furthermore, the step of forming the perovskite absorption layer 400 includes the following steps:

[0039] A perovskite precursor is provided.

[0040] A perovskite precursor is used to form a perovskite precursor layer on the surface of the modification layer away from the hole transport layer.

[0041] The perovskite precursor layer is heated and annealed to form a perovskite absorber layer.

[0042] The method of forming the perovskite precursor layer is spin coating, blade coating, slit coating or thermal spraying. The temperature of heating annealing is 100°C-150°C. The time of heating annealing is 10min-60min. The spin coating conditions are: initial rotation speed 500rpm-1500rpm, lasting 5s-10s. Then the conditions are changed to a rotation speed of 4000rpm-6000rpm, lasting 20s-30s.

[0043] Alternatively, the step of forming the perovskite absorption layer 400 includes the following steps:

[0044] Providing a perovskite precursor; evaporating the perovskite precursor on the surface of the modification layer away from the hole transport layer to form a perovskite absorption layer.

[0045] Furthermore, the electron transport layer includes a TiO2 layer, a SnO2 layer, a WO 3-xIn the step of forming the electron transport layer, the electron transport layer is formed by spin coating, ALD deposition, PVD sputtering or evaporation. For example, a 10nm-30nm C60 layer and a 5nm-15nm BCP layer are sequentially plated on the above perovskite absorption layer by vacuum hot plating.

[0046] Furthermore, the metal electrode 600 includes one or more of an Au electrode, an Ag electrode, a Cu electrode or an Al electrode; in the step of forming the metal electrode, the method of forming the metal electrode includes at least one of screen printing, vacuum sputtering, vacuum evaporation or atomic layer deposition.

[0047] Example 2

[0048] This embodiment provides a method for preparing a perovskite solar cell, comprising the following steps:

[0049] Provide a substrate: The substrate is conductive glass. Clean the conductive glass substrate, blow dry it, and then perform UV irradiation treatment.

[0050] Forming the hole transport layer: 30 mg NiO x Dispersed in 1 mL of pure water, the solution was spin-coated on the surface of the conductive glass substrate away from the conductive film to form a NiO X Thin film, annealing. Spin coating and annealing conditions are: 3000 rpm, 30 s; 150 ° C annealing 30 min.

[0051] Forming a perovskite absorption layer: Dissolve 889 mg FAPbI3, 33 mg MAPbBr3, and 33 mg MACl in 1 mL DMF / DMSO (8:1 v / v) to prepare a perovskite precursor solution, and spin-coat the perovskite precursor solution on the above-mentioned modified layer. Spin coating conditions are: initial speed 1000 rpm, lasting 5 seconds. Then change the conditions to a speed of 5000 rpm for 20 seconds. Add 700 μL of anti-solvent ether at 15 seconds after the change. Anneal at 150°C for 10 minutes.

[0052] Forming an electron transport layer: A 25 nm C60 layer and a 10 nm BCP layer are sequentially deposited on the above-mentioned perovskite absorption layer using a vacuum hot plating method.

[0053] Forming metal electrodes: A 120 nm thick silver electrode layer was plated on the surface of the electron transport layer and the surface of the conductive film layer of the glass substrate using a vacuum hot plating method.

[0054] The photoelectric conversion efficiency of the prepared perovskite solar cell was tested, and the efficiency of the perovskite solar cell reached 16.18%.

[0055] Example 3

[0056] This embodiment provides a method for preparing a perovskite solar cell, comprising the following steps:

[0057] Provide a substrate: The substrate is conductive glass. Clean the conductive glass substrate, blow dry it, and then perform UV irradiation treatment.

[0058] Forming the hole transport layer: 30 mg NiO x Dispersed in 1 mL of pure water, the solution was spin-coated on the surface of the conductive glass substrate away from the conductive film to form a NiOX film, and then annealed. The spin-coating and annealing conditions were: 3000 rpm, 30 s; 150° C. annealing for 30 min.

[0059] Forming a modification layer: HMTPD was dissolved in ethanol to prepare a solution with a concentration of 1 mg / mL, and then the modification layer was prepared on the above NiOx layer by spraying. The spraying conditions were: the substrate was placed on a hot plate at 100° C. and heated for 15 minutes, and then sprayed using a spray gun.

[0060] Forming a perovskite absorption layer: Dissolve 889 mg FAPbI3, 33 mg MAPbBr3, and 33 mg MACl in 1 mL DMF / DMSO (8:1 v / v) to prepare a perovskite precursor solution, and spin-coat the perovskite precursor solution on the above-mentioned modified layer. Spin coating conditions are: initial speed 1000 rpm, lasting 5 seconds. Then change the conditions to a speed of 5000 rpm for 20 seconds. Add 700 μL of anti-solvent ether at 15 seconds after the change of conditions. Anneal at 150°C for 10 minutes.

[0061] Forming an electron transport layer: A 25 nm C60 layer and a 10 nm BCP layer are sequentially deposited on the above-mentioned perovskite absorption layer using a vacuum hot plating method.

[0062] Forming metal electrodes: A 120 nm thick silver electrode layer was plated on the surface of the electron transport layer and the surface of the conductive film layer of the glass substrate using a vacuum hot plating method.

[0063] The photoelectric conversion efficiency of the prepared perovskite solar cell was tested, and the initial efficiency of the perovskite solar cell reached 19.83%.

[0064] Example 4

[0065] This embodiment provides a method for preparing a perovskite solar cell, comprising the following steps:

[0066] Providing a substrate: The substrate is a HJT bottom cell. Purge the surface of the HJT cell with nitrogen.

[0067] Forming the hole transport layer: 30 mg NiO XDispersed in 1 mL of pure water, the solution was spin-coated on the surface of the conductive glass substrate away from the conductive film to form a NiO X Thin film, annealing. The spin coating and annealing conditions are: rotation speed 3000 rpm, 30 s; annealing at 150 ° C for 30 min.

[0068] Forming the modified layer: HMTPD was dissolved in ethanol to prepare a solution with a concentration of 2 mg / mL, and then sprayed on the above NiO X The spraying conditions are as follows: the substrate is placed on a heating table at 150°C for 15 minutes and then sprayed using a spray gun.

[0069] Forming a perovskite absorption layer: Dissolve 889 mg FAPbI3, 33 mg MAPbBr3, and 33 mg MACl in 1 mL DMF / DMSO (8:1 v / v) to prepare a perovskite precursor solution, and spin-coat the perovskite precursor solution on the above-mentioned modified layer. Spin coating conditions are: initial speed 1000 rpm, lasting 5 seconds. Then change the conditions to a speed of 5000 rpm for 20 seconds. Add 700 μL of anti-solvent ether at 15 seconds after the change. Anneal at 150°C for 10 minutes.

[0070] Forming an electron transport layer: A 25 nm C60 layer and a 10 nm BCP layer are sequentially deposited on the above-mentioned perovskite absorption layer using a vacuum hot plating method.

[0071] Forming metal electrodes: using a vacuum hot-dip method to plate 120 nm of silver electrodes on the surface of the electron transport layer and the surface of the conductive film layer of the bottom battery.

[0072] The photoelectric conversion efficiency of the prepared perovskite solar cell was tested, and the initial efficiency of the perovskite solar cell reached 18.75%.

[0073] Example 5

[0074] This embodiment provides a method for preparing a perovskite solar cell, comprising the following steps:

[0075] Providing a substrate: The substrate is a CIGS bottom cell. Purge the surface of the CIGS cell with nitrogen.

[0076] Forming the hole transport layer: 30 mg NiO x Dispersed in 1 mL of pure water, the solution was spin-coated on the surface of the conductive glass substrate away from the conductive film to form a NiO X Thin film, annealing. The spin coating and annealing conditions are: rotation speed 3000 rpm, 30 s; annealing at 150 ° C for 30 min.

[0077] Forming the modified layer: HMTPD was dissolved in ethanol to prepare a solution with a concentration of 2 mg / mL, and then sprayed on the above NiO X The spraying conditions are as follows: the substrate is placed on a heating table at 200°C for 20 minutes and then sprayed using a spray gun.

[0078] Forming a perovskite absorption layer: Dissolve 889 mg FAPbI3, 33 mg MAPbBr3, and 33 mg MACl in 1 mL DMF / DMSO (8:1 v / v) to prepare a perovskite precursor solution, and spin-coat the perovskite precursor solution on the above-mentioned modified layer. Spin coating conditions are: initial speed 1000 rpm, lasting 5 seconds. Then change the conditions to a speed of 5000 rpm for 20 seconds. Add 700 μL of anti-solvent ether at 15 seconds after the change. Anneal at 150°C for 10 minutes.

[0079] Forming an electron transport layer: A 25 nm C60 layer and a 10 nm BCP layer are sequentially deposited on the above-mentioned perovskite absorption layer using a vacuum hot plating method.

[0080] Forming metal electrodes: using a vacuum hot-dip method to plate 120 nm of silver electrodes on the surface of the electron transport layer and the surface of the conductive film layer of the bottom battery.

[0081] The photoelectric conversion efficiency of the prepared perovskite solar cell was tested, and the initial efficiency of the perovskite solar cell reached 19.12%.

[0082] Example 6

[0083] This embodiment provides a method for preparing a perovskite solar cell, comprising the following steps:

[0084] Provide a substrate: The substrate is a TopCon bottom cell. Purge the surface of the TopCon cell with nitrogen.

[0085] Forming the hole transport layer: 30 mg NiO X Dispersed in 1 mL of pure water, the solution was spin-coated on the surface of the conductive glass substrate away from the conductive film to form a NiO X Thin film, annealing. The spin coating and annealing conditions are: rotation speed 3000 rpm, 30 s; annealing at 150 ° C for 30 min.

[0086] Forming the modified layer: HMTPD was dissolved in ethanol to prepare a solution with a concentration of 2 mg / mL, and then sprayed on the above NiO X The spraying conditions are as follows: the substrate is placed on a heating table at 150°C for 20 minutes and then sprayed using a spray gun.

[0087] Forming a perovskite absorption layer: Dissolve 889 mg FAPbI3, 33 mg MAPbBr3, and 33 mg MACl in 1 mL DMF / DMSO (8:1 v / v) to prepare a perovskite precursor solution, and spin-coat the perovskite precursor solution on the above-mentioned modified layer. Spin coating conditions are: initial speed 1000 rpm, lasting 5 seconds. Then change the conditions to a speed of 5000 rpm for 20 seconds. Add 700 μL of anti-solvent ether at 15 seconds after the change. Anneal at 150°C for 10 minutes.

[0088] Forming an electron transport layer: A 25 nm C60 layer and a 10 nm BCP layer are sequentially deposited on the above-mentioned perovskite absorption layer using a vacuum hot plating method.

[0089] Forming metal electrodes: using a vacuum hot-dip method to plate 120 nm of silver electrodes on the surface of the electron transport layer and the surface of the conductive film layer of the bottom battery.

[0090] The photoelectric conversion efficiency of the prepared perovskite solar cell was tested, and the initial efficiency of the perovskite solar cell reached 19.91%.

[0091] Efficiency comparison:

[0092] Referring to Table 1, the photoelectric conversion efficiency of the perovskite solar cells prepared in Examples 2 to 6 above was measured and calculated, and the data obtained after comparison are as follows:

[0093] Table 1 Comparison of photoelectric conversion efficiency of various solar cells

[0094] Example 2 Example 3 Example 4 Example 5 Example 6 Initial efficiency 16.18％ 19.83％ 18.75％ 19.12％ 19.91％

[0095] According to Table 1, after the solar cell prepared by the scheme of the present invention adds the interface modification layer of N,N,N',N'-tetrakis-(3-methylphenyl)-3,3'-dimethylbenzidine, the initial efficiency of Examples 3 to 6 is significantly greater than the initial efficiency of Example 2 without the interface modification layer of N,N,N',N'-tetrakis-(3-methylphenyl)-3,3'-dimethylbenzidine. It can be seen that the method for preparing a perovskite solar cell provided by the present invention forms a modification layer on the surface of the hole transport layer away from the substrate, and the modification layer is a N,N,N',N'-tetrakis-(3-methylphenyl)-3,3'-dimethylbenzidine modification layer. X A modified layer of N,N,N',N'-tetrakis-(3-methylphenyl)-3,3'-dimethylbenzidine is arranged between the hole transport layer and the perovskite absorption layer, which can effectively improve the carrier transport performance of the hole transport layer and significantly improve the performance of the device.

[0096] Obviously, the above embodiments are merely examples for the purpose of clear explanation, and are not intended to limit the implementation methods. For those skilled in the art, other different forms of changes or modifications can be made based on the above description. It is not necessary and impossible to list all the implementation methods here. The obvious changes or modifications derived therefrom are still within the scope of protection of the invention.

Claims

1. A method for preparing a perovskite solar cell, characterized in that: The following steps are involved: providing a substrate; At least one side surface of the substrate has a conductive film; Forming a hole transport layer; forming a hole transport layer on the surface of the substrate away from the conductive film; the hole transport layer is NiO x hole transport layer; Forming a modification layer; forming a modification layer on the surface of the hole transport layer away from the substrate, wherein the modification layer is a N,N,N',N'-tetrakis-(3-methylphenyl)-3,3'-dimethylbenzidine modification layer; Forming a perovskite absorption layer; forming a perovskite absorption layer on the surface of the modified layer away from the hole transport layer; forming an electron transport layer; forming an electron transport layer on a surface of the perovskite absorption layer away from the modification layer; Forming a metal electrode; forming a metal electrode on the surface of the electron transport layer away from the perovskite absorption layer and on the surface of the substrate having the conductive film.

2. The method for preparing a perovskite solar cell according to claim 1, characterized in that: In the step of forming the modification layer, the method of forming the modification layer includes thermal spraying; the step of thermal spraying includes: placing the substrate on a heating table for preheating, and then using a spray gun to spray N,N,N',N'-tetrakis-(3-methylphenyl)-3,3'-dimethylbenzidine solution on the side of the substrate away from the conductive film.

3. The method for preparing a perovskite solar cell according to claim 2, characterized in that: During preheating, the temperature of the heating table is 100°C-200°C; The preheating time is 10min-30min; The concentration of the N,N,N',N'-tetrakis-(3-methylphenyl)-3,3'-dimethylbenzidine solution is 0.5 mg / mL-4 mg / mL.

4. The method for preparing a perovskite solar cell according to claim 3, characterized in that: The solvent of the N,N,N',N'-tetrakis-(3-methylphenyl)-3,3'-dimethylbenzidine solution includes one or more of methanol, ethanol, isopropanol, DMF, DMSO or NMP.

5. The method for preparing a perovskite solar cell according to claim 3, characterized in that: The conductive film is an ITO film; The substrate is one of a HJT cell, a CIGS cell or a TopCon cell; or, The substrate is conductive glass.

6. The method for preparing a perovskite solar cell according to claim 1, characterized in that: In the step of forming the hole transport layer, the preparation method of the hole transport layer includes one or more of spin coating, ALD deposition or PVD sputtering.

7. The method for preparing a perovskite solar cell according to claim 1, characterized in that: The step of forming the perovskite absorption layer comprises the following steps: providing perovskite precursors; Using the perovskite precursor to form a perovskite precursor layer on the surface of the modified layer away from the hole transport layer; Heating and annealing the perovskite precursor layer to form the perovskite absorption layer; in, The method of forming the perovskite precursor layer is spin coating, blade coating, slit coating or thermal spraying; The temperature of heating annealing is 100℃-150℃; The heating annealing time is 10min-60min.

8. The method for preparing a perovskite solar cell according to claim 1, characterized in that: The step of forming the perovskite absorption layer comprises the following steps: providing perovskite precursors; The perovskite precursor is evaporated on the surface of the modification layer away from the hole transport layer to form the perovskite absorption layer.

9. The method for preparing a perovskite solar cell according to claim 1, characterized in that: The electron transport layer includes a TiO2 layer, a SnO2 layer, a WO 3-x One or more of a layer, a ZnO layer, a PCBM layer, a C60 layer or a BCP layer; In the step of forming the electron transport layer, the electron transport layer is formed by spin coating, ALD deposition, PVD sputtering or evaporation.

10. The method for preparing a perovskite solar cell according to claim 1, characterized in that: The metal electrode includes one or more of an Au electrode, an Ag electrode, a Cu electrode or an Al electrode; In the step of forming the metal electrode, the method of forming the metal electrode includes at least one of screen printing, vacuum sputtering, vacuum evaporation or atomic layer deposition.

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