Hybrid solar cell and photovoltaic module

Abstract

The present application provides a hybrid solar cell having a first surface and a second surface opposite to each other, the hybrid solar cell comprising: a silicon substrate; the tunneling layer is located between the silicon substrate and the first surface; and an intrinsic amorphous silicon layer between the silicon substrate and the second surface. According to the hybrid solar cell and the photovoltaic module provided by the invention, the parasitic absorption of the film layer and the preparation cost can be reduced on the basis of improving the conversion efficiency of the cell.

Description

Hybrid solar cells and photovoltaic modules Technical Field

[0001] The present application mainly relates to the field of photovoltaic technology, and in particular to a hybrid solar cell and a photovoltaic module. Background Art

[0002] With the development of photovoltaic technology, different types of solar cells have gradually gained favor among researchers and the market, resulting in the emergence of a variety of new crystalline silicon structure cells and technologies. Among the many types of cells, each type has its own advantages and disadvantages. Under this premise, combining different types of cells can better utilize the advantages of each cell, but it also requires the redesign of each film layer structure. In order to continuously optimize the conversion efficiency of the cell based on the combination of multiple cell types,

[0003] Summary of the Invention

[0004] The technical problem to be solved by the present application is to provide a hybrid solar cell and a component that can reduce the parasitic absorption of the film layer and reduce the preparation cost on the basis of improving the cell conversion efficiency.

[0005] To solve the above technical problems, the present application provides a hybrid solar cell having a first surface and a second surface relative to each other, wherein the hybrid solar cell includes: a silicon substrate; a tunneling layer located between the silicon substrate and the first surface; and an intrinsic amorphous silicon layer located between the silicon substrate and the second surface.

[0006] In one embodiment of the present application, the first surface is a light-facing surface of the hybrid solar cell, and the second surface is a backlight surface of the hybrid solar cell.

[0007] In one embodiment of the present application, the thickness of the tunneling layer is no more than 3 nanometers, and the tunneling layer is silicon oxide, silicon oxynitride, or aluminum oxide.

[0008] In one embodiment of the present application, a first doping layer is further included, located between the tunneling layer and the first surface, wherein the thickness of the first doping layer is in the range of 20 to 600 nanometers.

[0009] In one embodiment of the present application, the first doped layer includes doped polysilicon, and the doped polysilicon contains at least one element of oxygen, carbon, and nitrogen.

[0010] In one embodiment of the present application, a first conductive layer is further included, located between the first doped layer and the first surface, wherein the thickness of the first conductive layer is in the range of 10 to 200 nanometers.

[0011] In one embodiment of the present application, a diffusion layer is further included, located between the silicon substrate and the tunneling layer, wherein the doping type of the diffusion layer is the same as that of the silicon substrate, and the doping concentration of the diffusion layer is less than the doping concentration of the silicon substrate.

[0012] In one embodiment of the present application, the intrinsic amorphous silicon layer contains at least one element of oxygen, carbon, and nitrogen, and the thickness of the intrinsic amorphous silicon layer is in a range of 3 to 15 nanometers.

[0013] In one embodiment of the present application, a second doped layer is further included, located between the intrinsic amorphous silicon layer and the second surface, wherein the thickness of the second doped layer is in a range of 3 to 60 nanometers.

[0014] In one embodiment of the present application, the second doping layer includes a doped amorphous silicon or microcrystalline silicon film, and the second doping layer contains at least one element of oxygen, carbon, and nitrogen, wherein the doping type of the second doping layer is opposite to that of the silicon substrate.

[0015] In one embodiment of the present application, the doping type of the silicon substrate is N-type doping.

[0016] In one embodiment of the present application, a second conductive layer is further included, located between the second doped layer and the second surface, wherein the thickness of the second conductive layer is in the range of 10 to 200 nanometers.

[0017] In one embodiment of the present application, a dielectric layer is further included, which is located at the outermost layer close to the first surface.

[0018] In one embodiment of the present application, the dielectric layer is silicon nitride, silicon oxide, or silicon oxynitride, and the thickness of the dielectric layer is in a range of 10 to 200 nanometers.

[0019] In one embodiment of the present application, the first surface is the backlight surface of the hybrid solar cell, and the second surface is the light-facing surface of the hybrid solar cell, wherein the hybrid solar cell further includes a first doping layer located between the tunneling layer and the first surface, and the thickness of the first doping layer is 20 to 600 nanometers.

[0020] In one embodiment of the present application, the thickness of the tunneling layer is no more than 3 nanometers, and the tunneling layer is silicon oxide, silicon oxynitride, or aluminum oxide.

[0021] In one embodiment of the present application, the intrinsic amorphous silicon layer contains at least one element of oxygen, carbon, and nitrogen, and the thickness of the intrinsic amorphous silicon layer is in a range of 3 to 15 nanometers.

[0022] Another aspect of the present application further provides a photovoltaic module, comprising a plurality of hybrid solar cells according to any embodiment of the present application connected in series and / or in parallel.

[0023] Compared with the existing technology, the present application has the following advantages: the present application combines a passivated contact solar cell structure with a tunneling oxide layer with a heterojunction cell to obtain a hybrid solar cell with higher conversion efficiency; at the same time, by optimizing the arrangement and size of the film layers, the parasitic absorption of the film layer can be effectively reduced, the spectral response of the cell can be improved, and the cost of the cell can be reduced.

[0024] Summary of the Figures

[0025] The accompanying drawings are included to provide a further understanding of the present application. They are incorporated into and constitute a part of the present application. The accompanying drawings illustrate embodiments of the present application and, together with the description, serve to explain the principles of the present application.

[0026] In the attached figure:

[0027] FIG1 is a schematic structural diagram of a hybrid solar cell according to an embodiment of the present application;

[0028] FIG2 is a schematic structural diagram of a hybrid solar cell according to another embodiment of the present application;

[0029] FIG3 is a schematic structural diagram of a hybrid solar cell according to another embodiment of the present application; and

[0030] FIG4 is a schematic structural diagram of a hybrid solar cell according to another embodiment of the present application.

[0031] Preferred embodiments of the present invention

[0032] To more clearly illustrate the technical solutions of the embodiments of this application, the following is a brief introduction to the drawings required for describing the embodiments. Obviously, the drawings described below are merely examples or embodiments of this application. Those skilled in the art can apply this application to other similar scenarios based on these drawings without inventive effort. Unless otherwise apparent from the context or otherwise noted, the same reference numerals in the figures represent the same structure or operation.

[0033] As used in this application and the claims, unless the context clearly indicates otherwise, the words "a," "an," "an," and / or "the" are not intended to refer to the singular but may include the plural. Generally speaking, the terms "comprises" and "include" only indicate the inclusion of the steps and elements specifically identified, and these steps and elements do not constitute an exclusive list. A method or apparatus may also include other steps or elements.

[0034] Unless otherwise specifically stated, the relative arrangement of the parts and steps, numerical expressions and numerical values ​​set forth in these embodiments do not limit the scope of the present application. At the same time, it should be understood that, for ease of description, the sizes of the various parts shown in the drawings are not drawn according to actual proportional relationships. The techniques, methods and equipment known to those of ordinary skill in the relevant art may not be discussed in detail, but where appropriate, the techniques, methods and equipment should be considered as part of the authorization specification. In all examples shown and discussed here, any specific values ​​should be interpreted as being merely exemplary and not as limitations. Therefore, other examples of the exemplary embodiments may have different values. It should be noted that similar numbers and letters represent similar items in the following figures, and therefore, once an item is defined in one figure, it does not need to be further discussed in subsequent figures.

[0035] In the description of this application, it should be understood that the directions or positional relationships indicated by directional words such as "front, back, up, down, left, right", "horizontal, vertical, vertical, horizontal" and "top, bottom" are usually based on the directions or positional relationships shown in the accompanying drawings. They are only for the convenience of describing this application and simplifying the description. Unless otherwise specified, these directional words do not indicate or imply that the device or element referred to must have a specific direction or be constructed and operated in a specific direction. Therefore, they cannot be understood as limiting the scope of protection of this application; the directional words "inside and outside" refer to the inside and outside relative to the outline of each component itself.

[0036] For ease of description, spatially relative terms such as "above", "above", "on the upper surface of", "above", etc. may be used herein to describe the spatial positional relationship of a device or feature to other devices or features as shown in the figures. It should be understood that spatially relative terms are intended to include different orientations of the device in use or operation in addition to the orientation described in the figures. For example, if the device in the drawings is inverted, the device described as "above other devices or structures" or "above other devices or structures" will be positioned as "below other devices or structures" or "below other devices or structures". Thus, the exemplary term "above" can include both "above" and "below". The device can also be positioned in other different ways (rotated 90 degrees or in other orientations), and the spatially relative descriptions used here are interpreted accordingly.

[0037] Furthermore, it should be noted that the use of terms such as "first" and "second" to define components is solely for the purpose of distinguishing the corresponding components. Unless otherwise stated, these terms have no special meaning and therefore should not be construed as limiting the scope of protection of this application. Furthermore, while the terms used in this application are selected from commonly known and commonly used terms, some terms mentioned in this specification may have been selected by the applicant at his or her discretion, and their detailed meanings are explained in the relevant sections of this description. Furthermore, this application should be understood not only by the actual terms used, but also by the meaning implied by each term.

[0038] It should be understood that when a component is referred to as being “on another component,” “connected to another component,” “coupled to another component,” or “contacting another component,” it can be directly on, connected to, coupled to, or contacting the other component, or intervening components may be present. In contrast, when a component is referred to as being “directly on another component,” “directly connected to,” “directly coupled to,” or “directly contacting” another component, there are no intervening components. Similarly, when a first component is referred to as being “electrically in contact with” or “electrically coupled to” a second component, an electrical path exists between the first and second components that allows current to flow. This electrical path may include capacitors, coupled inductors, and / or other components that allow current to flow, even without direct contact between the conductive components.

[0039] An embodiment of the present application proposes a hybrid solar cell 10 with reference to FIG. 1 , which can reduce parasitic absorption of the film layer and lower the manufacturing cost while improving the cell conversion efficiency.

[0040] 1 , the hybrid solar cell 10 has a first surface 101 and a second surface 102 opposite to each other. In this embodiment, the first surface 101 is also the light-facing surface of the hybrid solar cell 101 , and the second surface 102 is also the backlight surface of the hybrid solar cell 101 .

[0041] Specifically, the hybrid solar cell 10 primarily includes a silicon substrate 11, a tunneling layer 12, and an intrinsic amorphous silicon layer 13. The tunneling layer 12 is located between the silicon substrate 11 and the first surface 101, and the intrinsic amorphous silicon layer 13 is located between the silicon substrate 11 and the second surface 102. For example, the silicon substrate 11 can be N-type or P-type. When the silicon substrate 11 is N-type doped, phosphorus or arsenic is used as a doping element. When the silicon substrate 11 is P-type doped, boron or gallium can be used as the doping element.

[0042] In various embodiments of the present application, including FIG. 1 , the thickness of the tunneling layer 12 is no greater than 3 nanometers, and preferably, this range can be further narrowed to 1.5 to 2.3 nanometers. The tunneling layer 12 can be made of silicon oxide, silicon oxynitride, or aluminum oxide. Furthermore, in various embodiments of the present application, the intrinsic amorphous silicon layer 13 includes at least one of oxygen, carbon, and nitrogen, providing passivation within the hybrid solar cell 10. In various embodiments of the present application, the thickness of the intrinsic amorphous silicon layer 13 is preferably in the range of 3 to 15 nanometers.

[0043] Furthermore, the hybrid solar cell 10 shown in FIG1 further includes a first doped layer 151 located between the tunneling layer 12 and the first surface 101. Preferably, the thickness of the first doped layer 151 ranges from 20 to 600 nanometers, preferably from 3 to 30 nanometers within this range. In some cases, this range can be further narrowed to 10 to 20 nanometers. Exemplarily, the first doped layer 151 comprises doped polycrystalline silicon containing at least one of oxygen, carbon, and nitrogen. In the embodiment shown in FIG1 , the hybrid solar cell 10 further includes a diffusion layer 14 located between the silicon substrate 11 and the tunneling layer 12. The diffusion layer 14 has the same doping type as the first doped layer 151, and the doping concentration of the diffusion layer 14 is lower than that of the first doped layer 151. Furthermore, in this embodiment, the doping concentration of the diffusion layer 14 decreases as it approaches the silicon substrate 11. For example, in different embodiments of the present application, the doping type of the first doping layer 151 can be n-type doping or p-type doping, wherein n-type doping is preferred.

[0044] In addition, the hybrid solar cell 10 also includes a first conductive layer 161, located between the first doped layer 151 and the first surface 101. According to the placement sequence shown in FIG1 , the upper surface of the first conductive layer 161 can be understood as the first surface 101 of the hybrid solar cell 10. The thickness of the first conductive layer 161 ranges from 10 to 200 nanometers. A first electrode 171 is also located above the first conductive layer 161, which can be implemented as a metal grid line, such as a copper grid line. For example, the first conductive layer 161 can be made of a transparent conductive material such as ZnO, InO, or SnO, which can be doped with at least one of Ga, Sn, Mo, Ce, F, W, and Al. It should be noted that, in various embodiments of the present application, a dielectric (anti-reflection) layer can be added to the first conductive layer 161, or the first conductive layer 161 can be directly replaced with a dielectric (anti-reflection) layer. This will be further explained below in conjunction with other figures.

[0045] As can be seen from the description above with reference to FIG1 , the side of the silicon substrate 11 close to the first surface 101 (the light-facing side) has a film structure mainly composed of a tunneling layer 12. It should be emphasized that the first doped layer 151 is thinner, which allows the hybrid solar cell 10 to be implemented as a thin film layer design on the side close to the light-facing side, thereby reducing the parasitic absorption of the film layer, thereby effectively minimizing optical losses, improving the spectral response of the cell, and achieving better cell efficiency. At the same time, the use of a thin film layer structural design can also reduce the production cost of the cell.

[0046] Based on the above description, the following description will focus on another portion of the hybrid solar cell 10, namely, the film structure between the silicon substrate 11 and the second surface 102. Specifically, in this embodiment, the hybrid solar cell 10 further includes a second doped layer 152 located between the intrinsic amorphous silicon layer 13 and the second surface 102. The thickness of the second doped layer 152 ranges from 3 to 60 nanometers, and preferably, can be set to 15 to 25 nanometers.

[0047] Exemplarily, the second doping layer 152 includes a doped amorphous silicon or microcrystalline silicon thin film containing at least one element selected from the group consisting of oxygen, carbon, and nitrogen. It should be noted that in various embodiments of the present application, including FIG. 1 , the doping type of the second doping layer 152 is opposite to that of the silicon substrate 11 (and the doping type of the second doping layer 152 is opposite to that of the first doping layer 151 ). Preferably, if the doping type of the silicon substrate 11 is N-type doping, the doping type of the second doping layer 152 is P-type doping. This configuration can further improve the efficiency of the hybrid solar cell 10.

[0048] On this basis, the hybrid solar cell further includes a second conductive layer 162, located between the second doped layer 152 and the second surface 102. In this case, the lower surface of the second conductive layer 162 can also be understood as being the second surface 102. Specifically, the thickness of the second conductive layer 162 can be selected within the range of 10 to 200 nanometers. A second electrode 172 is also provided on the second conductive layer 162, which can be implemented as a metal grid line, such as a copper-containing grid line. Exemplarily, the second conductive layer 162 can be made of a transparent conductive material such as ZnO, InO, or SnO, which can be doped with at least one element selected from the group consisting of Ga, Sn, Mo, Ce, F, W, and Al.

[0049] As can be seen from the above description, the hybrid solar cell 10 has a heterojunction cell structure primarily based on the intrinsic amorphous silicon layer 13 on the side of the hybrid solar cell 10 near the second surface 102 (i.e., the backlight side). By combining this with the TOPCon cell structure primarily based on the tunneling layer 12 described above, the hybrid solar cell 10 can achieve higher efficiency.

[0050] Based on the above embodiments, the present application may also have other variations. For example, FIG2 shows a hybrid solar cell 20 according to another embodiment of the present application. Compared to FIG1 , the cell structure details of the hybrid solar cell 20 are substantially the same as those of the hybrid solar cell 10, and therefore identical parts are numbered the same. Unlike the embodiment shown in FIG1 , in the embodiment shown in FIG2 , a dielectric layer 181 is provided above the first conductive layer 161, i.e., the outermost layer close to the first surface 101. In this case, the upper surface of the dielectric layer 181 also constitutes the first surface 101. The dielectric layer 181 may be made of a transparent dielectric material such as silicon nitride, silicon oxide, or silicon oxynitride. For example, in this embodiment, the thickness of the dielectric layer 181 at different locations is greater than or equal to 10 nanometers and less than or equal to 200 nanometers, preferably less than or equal to 100 nanometers. In this embodiment, the first electrode 171 (i.e., the metal grid line) has a vertical thickness in the range of 5 to 50 micrometers, preferably 5 to 15 micrometers or 10 to 15 micrometers, when arranged as shown in FIG2 . When the first electrode 171 is implemented as a metal grid line, there are main grid lines and fine grid lines among the many grid lines on the surface of the battery. In actual preparation, it is particularly necessary to laser (partially) groove at the corresponding position of the main grid line to form an opening 1810 as shown in Figure 2, which facilitates the subsequent welding of the welding strip and the contact with the metal grid line. At the same time, it is necessary to control the width of the groove so that the opening 1810 covers part or all of the welding point on the metal grid line (i.e., the first electrode 171); in some cases, when there is a welding point on the corresponding metal grid line, the width of the opening 1810 needs to be greater than the width of the welding point on the metal grid line.

[0051] On this basis, FIG3 shows another variation of the embodiment shown in FIG2 . As mentioned above, in some embodiments of the present application, a dielectric layer can be directly used to replace the first conductive layer. FIG3 shows such an embodiment. According to FIG3 , for the hybrid solar cell 30, the dielectric layer 181 is directly located on the first doped layer 151 and is located at a position close to the outermost layer of the first surface 101. For other details about the dielectric layer 181, please refer to the above description and will not be repeated here.

[0052] The structures of the hybrid solar cells 10 to 30 shown in the above-mentioned reference figures 1 to 3 all specifically place the TOPCon structure with the tunneling layer on the light-facing side of the cell. Due to the polycrystalline structure of the TOPCon and the doping of elements such as oxygen and carbon, the optical parasitic absorption of the passivation contact solution can be significantly reduced, thereby increasing the absorption of light by the cell substrate and improving the overall spectral response of the cell. From a process perspective, since the heterojunction passivation electrode structure is placed on the backlight side of the cell, the cell has low requirements on the morphology of the silicon substrate surface, which can simplify the related texturing and cleaning steps and reduce operating costs. Therefore, the above-mentioned structure of placing the TOPCon on the light-facing side of the cell and the heterojunction passivation electrode structure on the backlight side has significant advantages over the existing technology.

[0053] In addition, Figure 4 shows another hybrid solar cell 40 of the present application. Unlike the hybrid solar cells 10, 20, and 30 described above, the first surface 101 of the hybrid solar cell 40 is the backlight side, while the second surface 102 is the light-facing side. It should be noted that in this embodiment, the hybrid solar cell 40 has a first doped layer 151 located between the tunneling layer 12 and the first surface 101. The thickness of the first doped layer 151 is 20 to 600 nanometers. More preferably, the thickness of the first doped layer 151 can be designed to be within the range of 3 to 30 nanometers.

[0054] In this embodiment, similarly, the thickness of the tunneling layer 12 is not greater than 3 nanometers, and the tunneling layer 12 is silicon oxide, silicon oxynitride or aluminum oxide. The intrinsic amorphous silicon layer 13 contains at least one element of oxygen, carbon, and nitrogen, and the thickness of the intrinsic amorphous silicon layer 13 ranges from 3 to 15 nanometers. In addition, similar to the embodiments shown in Figures 2 and 3, a dielectric (anti-reflection) layer similar to that described above can also be provided on the second conductive layer 162, or the second conductive layer 162 can be directly replaced with a dielectric (anti-reflection) layer. For other details about the structure, size, material, etc. of each film layer of the hybrid solar cell 40, please refer to the description made above with reference to Figures 1 to 3, and will not be repeated here.

[0055] On the basis of the above description with reference to FIG. 1 to FIG. 4 , another aspect of the present application further proposes a photovoltaic module, which is composed of the hybrid solar cells proposed in any embodiment of the present application connected in series and / or in parallel.

[0056] The basic concepts have been described above. It will be apparent to those skilled in the art that the above disclosures are merely examples and do not limit the present application. Although not explicitly stated herein, those skilled in the art may make various modifications, improvements, and revisions to the present application. Such modifications, improvements, and revisions are suggested in the present application and remain within the spirit and scope of the exemplary embodiments of the present application.

[0057] At the same time, this application uses specific terms to describe the embodiments of this application. For example, "one embodiment," "an embodiment," and / or "some embodiments" refer to a certain feature, structure, or characteristic related to at least one embodiment of this application. Therefore, it should be emphasized and noted that "one embodiment," "an embodiment," or "an alternative embodiment" mentioned twice or multiple times in different locations in this specification does not necessarily refer to the same embodiment. In addition, certain features, structures, or characteristics in one or more embodiments of this application may be appropriately combined.

[0058] Similarly, it should be noted that, in order to simplify the description of this application and thus facilitate understanding of one or more embodiments of the application, the foregoing description of the embodiments of this application sometimes combines multiple features into a single embodiment, figure, or description thereof. However, this disclosure method does not mean that the subject matter of this application requires more features than those recited in the claims. In fact, the features of an embodiment may be fewer than all the features of the individual embodiments disclosed above.

[0059] In some embodiments, numbers are used to describe the quantity of components and attributes. It should be understood that such numbers used in the description of the embodiments are modified by the modifiers "about", "approximately" or "substantially" in some examples. Unless otherwise stated, "about", "approximately" or "substantially" indicate that the numbers are allowed to vary by ±20%. Accordingly, in some embodiments, the numerical parameters used in the description and claims are approximate values, which may change according to the required features of individual embodiments. In some embodiments, the numerical parameters should take into account the specified significant digits and adopt the general method of retaining digits. Although the numerical domains and parameters used to confirm the breadth of their range in some embodiments of the present application are approximate values, in specific embodiments, the settings of such numerical values ​​are as accurate as possible within the feasible range.

[0060] Although the present application has been described with reference to the current specific embodiments, ordinary technicians in this technical field should recognize that the above embodiments are only used to illustrate the present application, and various equivalent changes or substitutions can be made without departing from the spirit of the present application. Therefore, as long as the changes and modifications to the above embodiments are within the scope of the essential spirit of the present application, they will fall within the scope of the claims of the present application.

Claims

1. A hybrid solar cell having a first surface and a second surface opposite to each other, characterized in that: The hybrid solar cell comprises: Silicon substrate; a tunneling layer, located between the silicon substrate and the first surface; and The intrinsic amorphous silicon layer is located between the silicon substrate and the second surface.

2. The hybrid solar cell according to claim 1, characterized in that The first surface is a light-facing surface of the hybrid solar cell, and the second surface is a light-backed surface of the hybrid solar cell.

3. The hybrid solar cell according to claim 2, characterized in that The thickness of the tunneling layer is not greater than 3 nanometers, and the tunneling layer is silicon oxide, silicon oxynitride or aluminum oxide.

4. The hybrid solar cell according to claim 2 or 3, characterized in that: It also includes a first doping layer located between the tunneling layer and the first surface, wherein the thickness of the first doping layer ranges from 20 to 600 nanometers.

5. The hybrid solar cell according to claim 4, characterized in that The first doping layer includes doped polysilicon, and the doped polysilicon contains at least one element of oxygen, carbon, and nitrogen.

6. The hybrid solar cell according to claim 4, characterized in that It also includes a diffusion layer located between the silicon substrate and the tunneling layer, wherein the doping type of the diffusion layer is the same as that of the first doping layer, and the doping concentration of the diffusion layer is less than the doping concentration of the first doping layer.

7. The hybrid solar cell according to claim 5, characterized in that It also includes a first conductive layer located between the first doping layer and the first surface, wherein the thickness of the first conductive layer ranges from 10 to 200 nanometers.

8. The hybrid solar cell according to claim 5 or 7, characterized in that: The invention also includes a dielectric layer, which is located at the outermost layer close to the first surface.

9. The hybrid solar cell according to claim 8, characterized in that The dielectric layer is silicon nitride, silicon oxide or silicon oxynitride, and the thickness of the dielectric layer ranges from 10 to 200 nanometers.

10. The hybrid solar cell according to claim 2, characterized in that The intrinsic amorphous silicon layer contains at least one element of oxygen, carbon and nitrogen, and the thickness of the intrinsic amorphous silicon layer is in the range of 3 to 15 nanometers.

11. The hybrid solar cell according to claim 2 or 10, characterized in that: It also includes a second doping layer located between the intrinsic amorphous silicon layer and the second surface, wherein the thickness of the second doping layer ranges from 3 to 60 nanometers.

12. The hybrid solar cell according to claim 11, characterized in that The second doping layer includes a doped amorphous silicon or microcrystalline silicon film, and the second doping layer contains at least one element of oxygen, carbon, and nitrogen, wherein the doping type of the second doping layer is opposite to that of the silicon substrate.

13. The hybrid solar cell according to claim 12, characterized in that The doping type of the silicon substrate is N-type doping.

14. The hybrid solar cell according to claim 11, characterized in that The invention also includes a second conductive layer located between the second doped layer and the second surface, wherein the thickness of the second conductive layer is in the range of 10 to 200 nanometers.

15. The hybrid solar cell according to claim 1, wherein: The first surface is the backlight surface of the hybrid solar cell, and the second surface is the light-facing surface of the hybrid solar cell, wherein the hybrid solar cell further includes a first doping layer located between the tunneling layer and the first surface, and the thickness of the first doping layer is 20 to 600 nanometers.

16. The hybrid solar cell according to claim 15, characterized in that The thickness of the tunneling layer is not greater than 3 nanometers, and the tunneling layer is silicon oxide, silicon oxynitride or aluminum oxide.

17. The hybrid solar cell according to claim 15 or 16, characterized in that: The intrinsic amorphous silicon layer contains at least one element of oxygen, carbon and nitrogen, and the thickness of the intrinsic amorphous silicon layer is in the range of 3 to 15 nanometers.

18. A photovoltaic module comprising a plurality of hybrid solar cells according to any one of claims 1 to 17 connected in series and / or in parallel.

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