Equipment and method for preparing atomic gas chamber and atomic gas chamber

Abstract

The invention relates to the technical field of atomic gas chamber preparation, and discloses equipment and a method for preparing an atomic gas chamber and the atomic gas chamber. The equipment comprises a vacuumizing device and a vacuum box which are communicated with each other, wherein a wafer bonding machine, a vacuum manipulator and an alkali metal reduction device are arranged in the vacuum box; the alkali metal reduction device comprises a cylinder and a heating part, the heating part is arranged outside the cylinder in a surrounding mode, the upper end of the cylinder is open, a liquid containing cavity communicated with the opening is formed in the cylinder and used for containing a preset chemical solution, and the air chamber component can be buckled to the open end of the cylinder. Alkali metal in the preset chemical solution is condensed in the accommodating tank in a preset temperature environment; a glass sealing plate is placed in the wafer bonding machine; the vacuum manipulator is used for transferring the air chamber component on which the alkali metal is condensed to the glass sealing plate; and the wafer bonding machine is also used for bonding the bonding position of the glass sealing plate and the air chamber component. The prepared atomic gas chamber finished product is good in quality, and the preparation efficiency and the finished product yield are high.

Description

Technical Field

[0001] The present invention relates to the technical field, and in particular to a device for preparing an atomic gas chamber, a preparation method and an atomic gas chamber. Background Art

[0002] Chip-type atomic clocks and gyroscopes play an important role in positioning and navigation, and their core components are MEMS atomic gas chambers; this type of atomic gas chamber has the advantages of small size and mass production. At present, the widely used method for the preparation of MEMS atomic gas chambers is to use compounds to react, produce alkali metals, and collect or encapsulate the produced alkali metals in MEMS microstructures. For example, alkali metals are directly injected into the MEMS structure and then encapsulated, but because alkali metals are extremely easy to oxidize, the yield rate is low and the quality of the finished product is poor; or two chambers are used, one chamber is used to produce and prepare alkali metals, and the other chamber is used for light and alkali metals to interact, so as to separate the residues after the preparation of alkali metals and improve the intensity of the interaction between light and alkali metals, but not only there is the problem of low efficiency, but also because of the use of two chambers, the bonding yield is low and the volume of the MEMS gas chamber product is large. That is, in the prior art, whether the alkali metal is directly injected into the MEMS microstructure to reduce impurities, or the reaction residues are separated by using a double chamber, there are problems of low quality and yield of the finished product. Summary of the invention

[0003] Based on the above, the object of the present invention is to provide an apparatus, method and atomic gas chamber for preparing an atomic gas chamber, which has a high degree of automation, a better quality of the prepared atomic gas chamber product, and a higher preparation efficiency and finished product yield.

[0004] To achieve the above object, the present invention adopts the following technical solutions:

[0005] A device for preparing an atomic gas chamber, the prepared atomic gas chamber comprising an air chamber component and a glass sealing plate, one side of the air chamber component having a receiving groove, the glass sealing plate sealing the side of the air chamber component having the receiving groove and sealing the receiving groove, the device comprising a vacuum pumping device and a vacuum box, the vacuum pumping device being connected to the vacuum box, the vacuum box being provided with a wafer bonding machine, a vacuum manipulator and an alkali metal reduction device; the alkali metal reduction device comprising a cylinder and a heating component, the heating component being arranged outside the cylinder for generating heat, the cylinder The upper end is open, and the cylinder has a liquid holding cavity communicated with the opening, the liquid holding cavity is used to hold a preset chemical solution, the air chamber component can be snapped onto the open end of the cylinder, and the alkali metal in the preset chemical solution condenses in the containing groove under a preset temperature environment; the wafer bonding machine is provided with a bonding processing position, and the bonding processing position is used to place a glass sealing plate; the vacuum manipulator is used to transfer the air chamber component with the condensed alkali metal to the glass sealing plate, and the wafer bonding machine is also used to bond the joining portion between the glass sealing plate and the air chamber component.

[0006] As a preferred solution for an apparatus for preparing an atomic gas chamber, the cylinder body includes a first cylinder section and a second cylinder section arranged from bottom to top, the liquid holding chamber is formed in the first cylinder section, the upper end of the second cylinder section is open, and a throttling hole communicating with the liquid holding chamber is formed at the lower end.

[0007] As a preferred solution of the device for preparing an atomic gas chamber, the heating component includes a heating wire, and the heating wire is wound around the outer peripheral wall of the first barrel section.

[0008] As a preferred solution for the equipment for preparing the atomic gas chamber, a spiral installation groove is provided on the outer circumference of the first barrel section, and the heating wire is embedded in the installation groove.

[0009] As a preferred solution for the equipment for preparing an atomic gas chamber, the vacuum box is also provided with a refrigeration component located above the cylinder, and the refrigeration component is adjustable in height so that it can be attached to the gas chamber component or away from the gas chamber component, and the refrigeration component is used to generate cold.

[0010] A method for preparing an atomic gas chamber, the method comprising:

[0011] Prepare the air chamber component, wherein one side of the air chamber component has a plurality of spaced accommodating grooves;

[0012] Adding a preset chemical solution into the liquid holding chamber;

[0013] The air chamber component is buckled onto the open end of the cylinder body so that the notch of the receiving groove faces the liquid storage cavity;

[0014] Starting the vacuum pumping device to evacuate the vacuum box to a preset vacuum degree;

[0015] Turning on the heating component, heating the heating component to a preset heating temperature, so that the alkali metal in the preset chemical solution condenses in the containing tank under the preset temperature environment;

[0016] Starting the vacuum robot, the vacuum robot moves the air chamber component with the alkali metal condensed thereon into the wafer bonding machine, and places it on the glass sealing plate, with the notch of the receiving groove facing the glass sealing plate;

[0017] The wafer bonding machine is started to bond the glass sealing plate and the gas chamber component to obtain an atomic gas chamber.

[0018] As a preferred solution of the method for preparing an atomic gas chamber, an isolation plate is also prepared, wherein the isolation plate has a plurality of first through holes distributed at intervals;

[0019] After adding a preset chemical solution into the liquid storage cavity, the isolation plate is first placed on the open end of the air chamber component, and then the air chamber component is buckled onto the isolation plate, so that the multiple accommodating grooves are directly connected to the multiple first through holes.

[0020] As a preferred embodiment of a method for preparing an atomic gas chamber, preparing the gas chamber component comprises:

[0021] Prepare a silicon wafer, perform etching on the silicon wafer to form a plurality of blind holes distributed at intervals on the silicon wafer, and obtain the air chamber component, wherein the blind holes are the liquid storage tanks; or

[0022] A silicon wafer and a glass sheet are prepared, etching is performed on the silicon wafer to form a plurality of second through holes spaced apart from each other on the silicon wafer, and then the second glass sheet is bonded to one side of the silicon wafer to close one end of the second through hole to obtain the air chamber component.

[0023] As a preferred embodiment of the method for preparing an atomic gas chamber, the equipment for preparing the atomic gas chamber also includes a refrigeration component arranged in the vacuum box. After the vacuum pumping device is started to evacuate the vacuum box to a preset vacuum degree, the refrigeration component is moved until the refrigeration component is attached to the side of the gas chamber component away from the cylinder, and the heating component and the refrigeration component are turned on so that the heating component is heated to the preset heating temperature and the refrigeration component is cooled to the preset cooling temperature.

[0024] An atomic gas chamber is prepared by the method for preparing the atomic gas chamber described in any of the above technical solutions.

[0025] The beneficial effects of the present invention are:

[0026] The present invention provides a device for preparing an atomic gas chamber. Under the temperature environment provided by a heating component, alkali metals in a preset chemical solution in a liquid holding chamber are precipitated and condensed in a gas chamber component located above the liquid holding chamber, and the remaining residues remain in the liquid holding chamber. The purity of the alkali metals in the gas chamber component is relatively high, which can effectively improve the quality of the atomic gas chamber after being formed. The gas chamber component is then transferred under a vacuum environment by a vacuum manipulator, and the alkali metals in the gas chamber component are not easily oxidized, thereby ensuring the quality of the atomic gas chamber after being formed. Finally, a glass sealing plate is bonded and sealed on the gas chamber component to form an atomic gas chamber. The condensation and bonding processes of the alkali metals are all carried out under a vacuum environment, which can effectively reduce the influence of particulate matter on the bonding surface of the glass sealing plate and the gas chamber component, thereby reducing the leakage rate of the finished product.

[0027] The present invention also provides a method for preparing an atomic gas chamber. The atomic gas chamber prepared by the method has the advantages of high yield rate and good finished product quality.

[0028] The present invention also provides an atomic gas chamber, which has the advantages of higher yield rate and better finished product quality. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the following briefly introduces the drawings required for use in the description of the embodiments of the present invention. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on the contents of the embodiments of the present invention and these drawings without paying any creative work.

[0030] Figure 1 is a schematic structural diagram of an apparatus for preparing an atomic gas chamber provided in an embodiment of the present invention;

[0031] Figure 2 is a side view of a cylinder provided by an embodiment of the present invention;

[0032] Figure 3 is a cross-sectional view of a cylinder provided by an embodiment of the present invention;

[0033] Figure 4 is a top view of a cylinder provided by an embodiment of the present invention;

[0034] Figure 5 is a cross-sectional view of an air chamber component provided by an embodiment of the present invention;

[0035] Figure 6 is a cross-sectional view of a separation plate provided by an embodiment of the present invention;

[0036] Figure 7is a cross-sectional view of an air chamber component and a separation plate provided by an embodiment of the present invention buckled on a cylinder;

[0037] Figure 8 is a cross-sectional view of an atomic gas chamber provided by an embodiment of the present invention;

[0038] Fig. 9 It is a flow chart of a method for preparing an atomic gas chamber provided in an embodiment of the present invention.

[0039] In the figure:

[0040] 1. Vacuum box;

[0041] 2. Vacuum manipulator;

[0042] 3. Wafer bonding machine; 31. Processing table; 32. Pressure and temperature control panel; 33. High-voltage discharge needle;

[0043] 4. Alkali metal reduction device; 41. Cylinder; 411. First cylinder section; 412. Second cylinder section; 410. Liquid storage chamber; 4100. Throttle hole; 42. Heating wire; 43. Refrigeration element;

[0044] 101, air chamber component; 1010, receiving groove; 102, glass sealing plate; 103, isolation plate; 1030, first through hole;

[0045] 100. Alkali metals. DETAILED DESCRIPTION

[0046] The present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It is to be understood that the specific embodiments described herein are only used to explain the present invention, rather than to limit the present invention. It should also be noted that, for ease of description, only parts related to the present invention, rather than all structures, are shown in the accompanying drawings.

[0047] In the description of the present invention, unless otherwise clearly specified and limited, the terms "connected", "connected", and "fixed" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0048] In the present invention, unless otherwise clearly specified and limited, a first feature being "above" or "below" a second feature may include that the first and second features are in direct contact, or may include that the first and second features are not in direct contact but are in contact through another feature between them. Moreover, a first feature being "above", "above" and "above" a second feature includes that the first feature is directly above and obliquely above the second feature, or simply indicates that the first feature is higher in level than the second feature. A first feature being "below", "below" and "below" a second feature includes that the first feature is directly below and obliquely below the second feature, or simply indicates that the first feature is lower in level than the second feature.

[0049] In the description of the present embodiment, the terms "upper", "lower", "left", "right" and other directions or positional relationships are based on the directions or positional relationships shown in the accompanying drawings, and are only for the convenience of description and simplification of operation, rather than indicating or implying that the device or element referred to must have a specific direction, be constructed and operated in a specific direction, and therefore cannot be understood as a limitation of the present invention. In the description of the present invention, unless otherwise specified, the meaning of "plurality" is two or more. In addition, the terms "first" and "second" are only used to distinguish in the description and have no special meaning.

[0050] like Figures 1 to 9 As shown, this embodiment provides a device for preparing an atomic gas chamber, wherein the atomic gas chamber prepared by the device for preparing an atomic gas chamber comprises a gas chamber component 101 and a glass sealing plate 102, wherein one side of the gas chamber component 101 has a receiving groove 1010, and the glass sealing plate 102 is sealed on the side of the gas chamber component 101 having the receiving groove 1010, and seals the receiving groove 1010. Among them, one side of the gas chamber component 101 has a plurality of receiving grooves 1010 arranged at intervals, and the glass sealing plate 102 seals all the receiving grooves 1010.

[0051] Specifically, the equipment for preparing the atomic gas chamber includes a vacuum pumping device and a vacuum box 1, the vacuum pumping device is connected to the vacuum box 1, and a wafer bonding machine 3, a vacuum manipulator 2 and an alkali metal reduction device 4 are arranged in the vacuum box 1. The vacuum pumping device is used to evacuate the vacuum box 1 so that the vacuum degree in the vacuum box 1 reaches a preset vacuum degree, and the preset vacuum degree is exemplarily on the order of E-3Pa, so that the preparation of the atomic gas chamber is carried out in a vacuum environment, which can effectively prevent the oxygen in the atmospheric environment from oxidizing the alkali metal 100, and prevent external particulate matter from affecting the quality of the finished product.

[0052] More specifically, a bonding processing position is provided in the wafer bonding machine 3, and the bonding processing position is used to place the glass sealing plate 102; the alkali metal reduction device 4 includes a cylinder 41 and a heating component, and the heating component is arranged outside the cylinder 41 for generating heat. The upper end of the cylinder 41 is open, and the cylinder 41 has a liquid holding chamber 410 connected to the opening, and the liquid holding chamber 410 is used to hold a preset chemical solution. The air chamber component 101 can be buckled on the open end of the cylinder 41, and the alkali metal 100 in the preset chemical solution is condensed in the containing groove 1010 under a preset temperature environment; the vacuum manipulator 2 is used to transfer the air chamber component 101 with condensed alkali metal 100 to the glass sealing plate 102, and the wafer bonding machine 3 is also used to bond the joining portion between the glass sealing plate 102 and the air chamber component 101. Under the temperature environment provided by the heating component, the alkali metal 100 in the preset chemical solution in the liquid holding chamber 410 is precipitated and condensed in the air chamber component 101 located above the liquid holding chamber 410, and the remaining residue remains in the liquid holding chamber 410. The alkali metal 100 in the air chamber component 101 has a high purity, which can effectively improve the quality of the atomic air chamber after molding; the air chamber component 101 is then transferred in a vacuum environment by the vacuum manipulator 2, and the alkali metal 100 in the air chamber component 101 is not easily oxidized, thereby ensuring the quality of the atomic air chamber after molding; finally, the glass sealing plate 102 is bonded and sealed on the air chamber component 101 to form an atomic air chamber, and the condensation and bonding process of the alkali metal 100 are both carried out in a vacuum environment, which can effectively reduce the influence of particulate matter on the bonding surface of the glass sealing plate 102 and the air chamber component 101, thereby reducing the leakage rate of the finished product.

[0053] It can be understood that the air chamber component 101 is a silicon wafer, and a plurality of blind holes arranged at intervals are formed on one side of the silicon wafer by etching, and the blind holes are the above-mentioned receiving grooves 1010; or a plurality of through holes arranged at intervals are formed on the silicon wafer by etching, and a glass plate is bonded to one side of the silicon wafer to close one end of the through hole, thereby forming an air chamber component 101 with a plurality of receiving grooves 1010.

[0054] Preferably, if Figure 6 and Figure 7As shown, the device for preparing an atomic gas chamber also includes an isolation plate 103, on which are provided a plurality of first through holes 1030 spaced apart from each other; after adding a preset chemical solution into the liquid holding chamber 410, the isolation plate 103 is first placed on the open end of the gas chamber component 101, and then the gas chamber component 101 is snapped onto the isolation plate 103, so that the plurality of receiving grooves 1010 are directly connected to the plurality of first through holes 1030 one by one. The isolation plate 103 is used to isolate the air chamber component 101 and the cylinder 41, which can play a protective and isolating role for the side of the air chamber component 101 with the receiving groove 1010, thereby preventing the side of the air chamber component 101 with the receiving groove 1010 from directly facing the space inside the cylinder 41, thereby preventing impurity particles from remaining on the side of the air chamber component 101 with the receiving groove 1010 during the formation of the alkali metal 100, ensuring the flatness and cleanliness of the side of the air chamber component 101 with the receiving groove 1010, thereby ensuring the subsequent bonding and sealing effect of the air chamber component 101 and the glass sealing plate 102, and improving the leakage-proof effect.

[0055] In this embodiment, if Figures 1 to 4 As shown, the cylinder 41 includes a first cylinder section 411 and a second cylinder section 412 arranged from bottom to top, a liquid holding chamber 410 is formed in the first cylinder section 411, the upper end of the second cylinder section 412 is open, and a throttle hole 4100 communicating with the liquid holding chamber 410 is formed at the lower end. Under the heating action of the heating component, the preset chemical solution in the first cylinder section 411 located below reacts, and the alkali metal 100 precipitates and moves upward through the throttle hole 4100. The heating component heats the cylinder 41, and the temperature of the air chamber component 101 is lower than that of the cylinder 41. The alkali metal 100 moves upward to the receiving groove 1010 and condenses in the receiving groove 1010. Preferably, the diameter of the first barrel section 411 is smaller than that of the second barrel section 412, and the diameter of the throttling hole 4100 is smaller than that of the second barrel section 412, so that the evaporation gas flow is small, and the evaporation gas flow is fully diffused and evenly diffused in the second barrel section 412 after passing through the throttling hole 4100 and then enters the containing tank 1010, thereby improving the distribution uniformity of the alkali metal 100 in each containing tank 1010. Of course, in other embodiments, the diameter of the throttling hole 4100 may also be the same as the diameter of the second barrel section 412.

[0056] Specifically, the heating component includes a heating wire 42, which is wound around the outer peripheral wall of the first barrel section 411. The heating wire 42 is energized to generate heat, and the heat distribution is relatively uniform, so that the preset chemical solution in the first barrel section 411 can fully react. The controllable temperature range of the heating wire 42 is from room temperature to 500°C. For example, in this embodiment, according to the preparation requirements of the alkali metal 100, the heating temperature is controlled at 300-450°C, such as 300°C, 350°C, 400°C or 450°C.

[0057] Preferably, a spiral mounting groove is provided on the outer periphery of the first barrel section 411, and the heating wire 42 is embedded in the mounting groove. The mounting groove provides a limited mounting space for the heating wire 42, so that the position of the heating wire 42 is relatively stable to avoid slippage, thereby improving the reliability of use. At the same time, the heating wire 42 embedded in the mounting groove can effectively improve the appearance of the barrel 41 and improve the compactness of the structure.

[0058] like Figure 1 As shown, in order to enable the alkali metal 100 to condense smoothly in the receiving tank 1010, a refrigeration element 43 located above the cylinder 41 is further provided in the vacuum box 1, and the refrigeration element 43 is adjustable in height direction. For example, a Z-direction linear motion module is provided in the vacuum box 1, and the refrigeration element 43 is connected to the driving end of the Z-direction linear motion module. The refrigeration element 43 is driven up and down by the Z-direction linear motion module, so that the refrigeration element 43 is attached to the air chamber component 101 or away from the air chamber component 101. The refrigeration element 43 is used to generate cold. The refrigeration of the refrigeration element 43 forms the temperature gradient required for the condensation of the alkali metal 100 between the air chamber component 101 and the cylinder 41, so that the alkali metal 100 is smoothly condensed in the receiving tank 1010. It should be noted that the refrigeration component 43 is turned on or off according to actual temperature requirements, and the refrigeration temperature of the refrigeration component 43 is controlled according to requirements, for example, the refrigeration temperature is controlled between 0°C and room temperature. The specific preset refrigeration temperature is set according to actual requirements, for example, according to the condensation requirements of the alkali metal 100, the refrigeration temperature is controlled at 0°C, 5°C, 15°C or 25°C, etc.

[0059] Optionally, the cooling element 43 is a semiconductor cooling sheet, which has a compact structure and is easy to assemble.

[0060] Furthermore, the wafer bonding machine 3 includes a processing table 31, a pressure and temperature control disk 32 and a high-voltage discharge needle 33. The glass sealing plate 102 is placed and fixed on the processing table 31. A limiting device is preferably provided on the processing table 31. The limiting device is used to clamp or loosen the glass sealing plate 102 to ensure the position stability of the glass sealing plate 102; the pressure and temperature control disk 32 is movably arranged above the processing table 31 in the height direction so that it can be pressed on the air chamber component 101 or away from the air chamber component 101. The pressure and temperature control disk 32 is used to provide pressure and the temperature required for bonding; the high-voltage discharge needle 33 is arranged on one side of the processing table 31 and is aligned with the bonding surface of the air chamber component 101 and the glass sealing plate 102, and is used to apply the voltage and weak current required for bonding.

[0061] The limiting device includes, for example, at least two clamping members spaced apart on the processing table 31, each clamping member includes a driving cylinder and a limiting plate connected to the output end of the driving cylinder, and the driving cylinder drives the limiting plate to move radially along the glass sealing plate 102, so as to achieve the clamping, limiting or loosening of the glass sealing plate 102 by at least two limiting plates. The limiting plate is preferably arc-shaped to improve the limiting ability of the glass sealing plate 102; a protective flexible pad is provided on the side of the limiting plate contacting the glass sealing plate 102 to avoid damage to the glass sealing plate 102.

[0062] Specifically, the bonding machine also includes a driving device, which drives the pressure temperature control disk 32 to drive the pressure temperature control disk 32 to move in the height direction. The driving device can be selected but not limited to a cylinder. The pressure temperature control disk 32 includes a disk body, and a bonding heating wire 42 is arranged in the disk body. The bonding heating wire 42 is connected to an external power supply, and the bonding heating wire 42 is powered by the power supply, so that the bonding heating wire 42 generates heat. The pressure temperature control disk 32 is driven to move by the driving device, so that the pressure temperature control disk 32 approaches the air chamber component 101, and is finally pressed on the air chamber component 101 with a preset pressure; at the same time, the bonding heating wire 42 is heated to a preset bonding temperature, and the air chamber component 101 and the glass sealing plate 102 are bonded to form a closed integrated structure under the pressure, temperature, current and voltage conditions required for bonding. Exemplarily, when the gas chamber component 101 and the glass sealing plate 102 are bonded, the driving device drives the pressure and temperature control disk 32 to apply a pressure of 5kN to 10kN, for example, 5kN, 7kN, 9kN or 10kN, on the gas chamber component 101, and the pressure and temperature control disk 32 is heated to 350 to 450°C, for example, 350°C, 380°C, 400°C, 420°C or 450°C, and the voltage generated by the high-voltage discharge needle 33 is 400 to 1000V, for example, 400V, 500V, 600V, 700V, 800V, 900V or 1000V, and the current is 0.5 to 5mA, for example, 0.5mA, 1mA, 2mA, 3mA, 4mA or 5mA, and the like.

[0063] like Figure 1 and Fig. 9 As shown, this embodiment also provides a method for preparing an atomic gas chamber based on the above-mentioned device for preparing an atomic gas chamber, and the method for preparing the atomic gas chamber specifically includes the following steps:

[0064] S1: Prepare an air chamber component 101, one side of the air chamber component 101 has a plurality of spaced accommodating grooves 1010;

[0065] Wherein, preparing the air chamber component 101 comprises:

[0066] S11: preparing a silicon wafer, etching the silicon wafer to form a plurality of blind holes distributed at intervals on the silicon wafer, to obtain an air chamber component 101, wherein the blind holes are the liquid storage tanks; or

[0067] S11: prepare a silicon wafer and a glass sheet, perform etching on the silicon wafer to form a plurality of second through holes spaced apart from each other on the silicon wafer, and then bond the second glass sheet to one side of the silicon wafer to close one end of the second through hole, thereby obtaining the air chamber component 101.

[0068] S2: adding a preset chemical solution into the liquid holding chamber 410. The preset chemical solution is prepared specifically according to the alkali metal 100 to be formed, which will not be elaborated here.

[0069] S3: snap the air chamber component 101 onto the open end of the cylinder 41 so that the notch of the receiving groove 1010 faces the liquid storage cavity 410;

[0070] Preferably, before the air chamber component 101 is snapped onto the open end of the cylinder 41, an isolation plate 103 is prepared first, and the isolation plate 103 has a plurality of first through holes 1030 spaced apart from each other. After adding a preset chemical solution into the liquid storage cavity 410, the isolation plate 103 is first placed on the open end of the air chamber component 101, and then the air chamber component 101 is snapped onto the isolation plate 103, so that the plurality of receiving grooves 1010 are directly connected to the plurality of first through holes 1030 one by one. The isolation plate 103 is used to isolate the air chamber component 101 and the cylinder 41, which can play a protective and isolating role for the side of the air chamber component 101 with the receiving groove 1010, thereby preventing the side of the air chamber component 101 with the receiving groove 1010 from directly facing the space inside the cylinder 41, thereby preventing impurity particles from remaining on the side of the air chamber component 101 with the receiving groove 1010 during the formation of the alkali metal 100, ensuring the flatness and cleanliness of the side of the air chamber component 101 with the receiving groove 1010, thereby ensuring the subsequent bonding and sealing effect of the air chamber component 101 and the glass sealing plate 102, and improving the leakage-proof effect.

[0071] The isolation plate 103 may be a glass plate, and a plurality of first through holes 1030 distributed at intervals are formed by punching holes in the glass plate.

[0072] S4: Start the vacuum pumping device to evacuate the vacuum box 1 to a preset vacuum degree;

[0073] By evacuating the air, the subsequent evaporation and condensation reactions and bonding operations are all carried out in a vacuum environment, which can effectively reduce the influence of water vapor and oxygen in the atmospheric environment on the preparation of alkali metal 100 during and after the preparation, and effectively reduce the influence of external particles on the subsequent atomic gas chamber sealing operation, thereby improving the finished product quality and finished product yield of the atomic gas chamber.

[0074] The vacuum pumping device evacuates the vacuum box 1 to a vacuum degree of the order of E-3Pa.

[0075] S5: Turn on the heating component and heat the heating component to a preset heating temperature, so that the alkali metal 100 in the preset chemical solution condenses in the containing tank 1010 under a preset temperature environment;

[0076] The heating component controls the heating temperature to be between 300°C and 450°C, for example, 300°C, 350°C, 400°C or 450°C.

[0077] In an embodiment, the refrigeration element 43 is turned on while the heating component is turned on, and the refrigeration element 43 is moved to be attached to the air chamber component 101, wherein the refrigeration temperature can be selectively controlled between 0°C and room temperature, such as 0°C, 5°C, 15°C or 25°C.

[0078] By heating with the heating component and cooling with the cooling element 43 , a temperature gradient required for condensation of the alkali metal 100 is formed between the gas chamber component 101 and the cylinder 41 , so that the alkali metal 100 is smoothly condensed in the containing tank 1010 .

[0079] S6: starting the vacuum robot 2, the vacuum robot 2 moves the air chamber component 101 with the condensed alkali metal 100 to the wafer bonding machine 3, and places it on the glass sealing plate 102, with the notch of the receiving groove 1010 facing the glass sealing plate 102;

[0080] Preferably, before transferring the gas chamber component 101, a preset amount of buffer gas is first injected into the vacuum box 1, and then the vacuum manipulator 2 is started to move the gas chamber component 101 condensed with the alkali metal 100 to the wafer bonding machine 3. The role of the buffer gas is to adjust the gas ratio and composition in the atomic gas chamber after bonding, and improve the performance of the atomic gas chamber after bonding. Exemplarily, the buffer gas is nitrogen or argon, and the filling level is 50 Torr to 300 Torr.

[0081] S7: Start the wafer bonding machine 3, and the wafer bonding machine 3 bonds the glass sealing plate 102 and the gas chamber component 101 to obtain the atomic gas chamber.

[0082] The glass sealing plate 102 and the gas chamber component 101 are operated in a vacuum environment to prevent oxygen in the atmospheric environment from oxidizing the alkali metal 100, and to prevent foreign particles from entering the receiving groove 1010 or staying on the bonding surface of the glass sealing plate 102 and the gas chamber component 101 to affect the quality of the atomic gas chamber, so that the leakage rate of the prepared atomic gas chamber is low.

[0083] It should be noted that the bonding process of the glass sealing plate 102 and the gas chamber component 101 by the wafer bonding machine 3 refers to the description of the above-mentioned equipment for preparing the atomic gas chamber, which will not be repeated here.

[0084] This embodiment also provides an atomic gas chamber produced by the above-mentioned atomic gas chamber production method, which has the advantages of less impurities, higher quality and higher production efficiency.

[0085] Note that the above are only preferred embodiments of the present invention and the technical principles used. Those skilled in the art will understand that the present invention is not limited to the specific embodiments described herein, and that various obvious changes, readjustments and substitutions can be made by those skilled in the art without departing from the scope of protection of the present invention. Therefore, although the present invention has been described in more detail through the above embodiments, the present invention is not limited to the above embodiments, and may include more other equivalent embodiments without departing from the concept of the present invention, and the scope of the present invention is determined by the scope of the appended claims.

Claims

1. A device for preparing an atomic gas chamber, wherein the prepared atomic gas chamber comprises a gas chamber component and a glass sealing plate, wherein one side of the gas chamber component has a receiving groove, and the glass sealing plate is sealed on one side of the gas chamber component having the receiving groove and seals the receiving groove, wherein: The equipment comprises a vacuum pumping device and a vacuum box, wherein the vacuum pumping device is connected to the vacuum box, and a wafer bonding machine, a vacuum manipulator and an alkali metal reduction device are arranged in the vacuum box; The alkali metal reduction device comprises a cylinder and a heating component, wherein the heating component is arranged outside the cylinder and is used to generate heat, the upper end of the cylinder is open, and the cylinder has a liquid storage cavity communicated with the opening, the liquid storage cavity is used to store a preset chemical solution, the air chamber component can be buckled on the open end of the cylinder, and the alkali metal in the preset chemical solution condenses in the containing tank under a preset temperature environment; The wafer bonding machine is provided with a bonding processing position, and the bonding processing position is used to place a glass sealing plate; The vacuum robot is used to transfer the gas chamber component on which the alkali metal is condensed to the glass sealing plate, and the wafer bonding machine is also used to bond the joining portion between the glass sealing plate and the gas chamber component.

2. The device for preparing an atomic gas chamber according to claim 1, characterized in that: The cylinder body includes a first cylinder section and a second cylinder section arranged from bottom to top, the liquid storage cavity is formed in the first cylinder section, the upper end of the second cylinder section is open, and the lower end is provided with a throttling hole communicating with the liquid storage cavity.

3. The device for preparing an atomic gas chamber according to claim 2, characterized in that: The heating component includes a heating wire, and the heating wire is wound around the outer peripheral wall of the first barrel section.

4. The device for preparing an atomic gas chamber according to claim 3, characterized in that: The outer circumference of the first barrel section is provided with a spiral installation groove, and the heating wire is embedded in the installation groove.

5. The device for preparing an atomic gas chamber according to claim 1, characterized in that: The vacuum box is also provided with a refrigeration component located above the cylinder. The position of the refrigeration component is adjustable along the height direction so that it can be attached to the air chamber component or away from the air chamber component. The refrigeration component is used to generate cold energy.

6. A method for preparing an atomic gas chamber, based on the device for preparing an atomic gas chamber according to any one of claims 1 to 5, characterized in that: The preparation method comprises: Prepare the air chamber component, wherein one side of the air chamber component has a plurality of spaced accommodating grooves; Adding a preset chemical solution into the liquid holding chamber; The air chamber component is buckled onto the open end of the cylinder body so that the notch of the receiving groove faces the liquid storage cavity; Starting the vacuum pumping device to evacuate the vacuum box to a preset vacuum degree; Turning on the heating component, heating the heating component to a preset heating temperature, so that the alkali metal in the preset chemical solution condenses in the containing tank under the preset temperature environment; Starting the vacuum robot, the vacuum robot moves the air chamber component on which the alkali metal is condensed into the wafer bonding machine, and places it on the glass sealing plate, with the notch of the receiving groove facing the glass sealing plate; The wafer bonding machine is started to bond the glass sealing plate and the gas chamber component to obtain an atomic gas chamber.

7. The method for preparing an atomic gas chamber according to claim 6, characterized in that: Also preparing an isolation plate, the isolation plate having a plurality of first through holes distributed at intervals; After adding a preset chemical solution into the liquid holding cavity, the isolation plate is first placed on the open end of the air chamber component, and then the air chamber component is buckled onto the isolation plate, so that the plurality of accommodating grooves are in direct communication with the plurality of first through holes one by one.

8. The method for preparing an atomic gas chamber according to claim 6, characterized in that: Preparing the air chamber component comprises: Prepare a silicon wafer, perform etching on the silicon wafer to form a plurality of blind holes distributed at intervals on the silicon wafer, and obtain the air chamber component, wherein the blind holes are the liquid storage tanks; or A silicon wafer and a glass sheet are prepared, etching is performed on the silicon wafer to form a plurality of second through holes spaced apart from each other on the silicon wafer, and then the second glass sheet is bonded to one side of the silicon wafer to close one end of the second through hole to obtain the air chamber component.

9. The method for preparing an atomic gas chamber according to claim 6, characterized in that: The equipment for preparing an atomic gas chamber also includes a refrigeration component arranged in the vacuum box. After the vacuum pumping device is started to evacuate the vacuum box to a preset vacuum degree, the refrigeration component is moved until the refrigeration component is attached to the side of the gas chamber component away from the cylinder, and the heating component and the refrigeration component are turned on so that the heating component is heated to the preset heating temperature and the refrigeration component is cooled to the preset cooling temperature.

10. An atomic gas chamber, characterized in that: The atomic gas chamber is prepared by the preparation method of any one of claims 6 to 9.

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