Low-toxicity cuprous oxide semiconductor coating material and preparation method thereof

Abstract

The invention discloses a low-toxicity cuprous oxide semiconductor coating material and a preparation method thereof, and in the composition of raw materials for preparing the low-toxicity cuprous oxide semiconductor coating material, copper oxide powder CuO and copper powder Cu are used as main components; at least two metal oxides are used as additives and at least comprise Cr2O3 and Fe2O3; kaolin, feldspar powder and quartz sand are used as mineralizing agents, and deionized water is used as a solvent; the raw materials comprise the following components in percentage by mass: 35-45% of copper oxide powder CuO; 8 to 12 percent of copper powder Cu; 7 to 9 percent of ferric oxide (Fe2O3); 7 to 9 percent of chromium sesquioxide (Cr2O3); 5% to 8% of feldspar powder 3Al2O3. 2SiO2-Al2O3; 18 to 22 percent of quartz sand SiO2; 5 to 7 percent of kaolin; the sum of the mass proportions of the components is 100%. According to the technical scheme, the problem that the existing semiconductor coating material taking Cu2O as a main material does not have the capability of adopting spraying processing due to the fact that Cu2O has high toxicity is solved.

Description

Technical Field

[0001] The present invention relates to the technical field of inorganic non-metallic materials, but is not limited thereto, and in particular to a low-toxic cuprous oxide semiconductor coating material and a preparation method thereof. Background Art

[0002] At present, the ignition devices used in aircraft engines / starters basically use semiconductor coating materials coated on ceramic parts, and the ceramic parts or SiC semiconductor blocks are assembled with metal parts to form an electric nozzle ignition component.

[0003] Among them, semiconductor parts are made of Al 2 O 3 、ZrO 2 Ceramic substrate, directly coated with Cu 2 O as the main component of the semiconductor coating material and then fired to form Cu 2 The processing method of semiconductor coating materials with O as the main component is simple. The formed semiconductor parts have a negative temperature gradient coefficient. When the assembly formed by the semiconductor parts is subjected to an external voltage, several electrical conductions are formed, current passes through, resistance decreases, and current density increases. When the current density increases to a certain value, an "avalanche" capacitor discharge is formed, sparks are formed in the gap, and the fuel mixture is ignited. In addition, the instantaneous spark energy of the assembly is relatively large, which is suitable for harsh working environments such as high altitude, hot and cold shocks, and heavy oil pollution.

[0004] However, Cu 2 O is highly toxic, and the maximum allowable concentration in the air is 0.1 mg / m 3 When the content in the air reaches 0.22~14mg / m 3 When the concentration of Cu 2 Semiconductor coating materials with O as the main material are not capable of being processed by spraying. Summary of the invention

[0005] The purpose of the present invention is to solve the above technical problems. The present invention provides a low-toxic cuprous oxide semiconductor coating material and a preparation method thereof to solve the existing Cu 2 O is the main material of semiconductor coating materials, due to Cu 2 O is highly toxic, which leads to the problem that it cannot be processed by spraying.

[0006] The technical solution of the present invention: In the first aspect, the embodiment of the present invention provides a low-toxicity cuprous oxide semiconductor coating material, wherein the raw material composition for preparing the low-toxicity cuprous oxide semiconductor coating material comprises copper oxide powder CuO and copper powder Cu as main components; and at least two metal oxides as additives, including at least Cr2 O 3 and Fe 2 O 3 ; Kaolin, feldspar powder and quartz sand are used as mineralizers, and deionized water is used as solvent; the mass proportions of the components of the raw materials are respectively:

[0007]

[0008] The sum of the mass proportions of the above components is 100%.

[0009] Optionally, in the low-toxicity cuprous oxide semiconductor coating material as described above, during the preparation of the low-toxicity cuprous oxide semiconductor coating material, cuprous oxide Cu is generated by reacting copper oxide powder CuO with excess copper powder Cu. 2 O ingredients, instead of directly using cuprous oxide Cu 2 O raw material as the main material preparation method; wherein the chemical formula of the reaction of copper oxide powder CuO and excess copper powder Cu is:

[0010] CuO+Cu→Cu 2 O;

[0011] Among them, the cuprous oxide Cu generated during the reaction 2 Compared with copper oxide powder CuO which is highly toxic, the copper oxide powder CuO used in the preparation of raw materials is less toxic; the excess copper powder Cu in the raw materials is used to improve the electrical properties of the semiconductor material coating.

[0012] Optionally, in the low-toxic cuprous oxide-based semiconductor coating material as described above,

[0013] Cuprous Oxide Cu 2 The melting point of CuO is 1235°C, and the melting point of the copper oxide powder CuO used in the preparation of the raw material is 1026°C. 2 O is used as a raw material to lower the sintering melting point and facilitate the sintering process.

[0014] Optionally, in the low-toxic cuprous oxide-based semiconductor coating material as described above,

[0015] Deionized water is used as a solvent instead of anhydrous ethanol in the raw materials used to prepare low-toxic cuprous oxide semiconductor coating materials, thereby reducing the risk of easy volatilization of the coating during the preparation process.

[0016] In a second aspect, an embodiment of the present invention further provides a method for preparing a low-toxic cuprous oxide semiconductor coating material, characterized in that it comprises:

[0017] Step 1, weighing the required powder according to the composition and mass ratio of the raw material of the low-toxic cuprous oxide-based semiconductor coating material as described in any one of the above items as the material for preparation;

[0018] Step 2, after calcining the material weighed in step 1, pass it through a 300-mesh sieve, pour it into a high-alumina porcelain ball mill, add ceramic balls and deionized water according to a preset ratio, and form a slurry through wet ball milling.

[0019] Optionally, in the method for preparing the low-toxic cuprous oxide semiconductor coating material as described above,

[0020] In the step 2, the material: ball (ceramic ball): water (deionized water) = 1:2:0.7, the loading factor is not greater than 0.7, and wet ball milling is performed for 36 hours to form a slurry.

[0021] Optionally, in the method for preparing the low-toxicity cuprous oxide semiconductor coating material as described above, the application method of the prepared low-toxicity cuprous oxide semiconductor coating material is as follows:

[0022] The slurry prepared in claim 5 or 6 is applied to the Al 2 O 3 Ceramic parts or ZrO 2 The surface of ceramic parts is sintered in an electric furnace to form parts with coatings attached;

[0023] The accumulated spark count of the coated parts formed by the low-toxic cuprous oxide semiconductor coating material can reach more than 1.3 million times.

[0024] Optionally, in the method for preparing the low-toxicity cuprous oxide semiconductor coating material as described above, the application of the low-toxicity cuprous oxide semiconductor coating material includes:

[0025] Step 3: Dip-coat the slurry on Al 2 O 3 Ceramic parts or ZrO 2 The discharge end surface of the ceramic part is placed in a porous ceramic boat after being dried naturally;

[0026] Step 4, place the porcelain boat into a box-type high-temperature electric furnace, heat it to 1260±10°C, and keep it warm for 30 minutes; after power off, cool it naturally to below 150°C and take it out of the furnace to sinter it into parts with coatings.

[0027] Optionally, in the method for preparing the low-toxicity cuprous oxide semiconductor coating material as described above, the application of the low-toxicity cuprous oxide semiconductor coating material further includes:

[0028] Step 5, measuring the performance of the semiconductor component with the semiconductor coating after sintering, including: surface resistance measurement and minimum discharge voltage measurement.

[0029] Beneficial effects of the present invention: A low-toxic cuprous oxide semiconductor coating material and a preparation method thereof provided in an embodiment of the present invention, based on the raw material components of the low-toxic cuprous oxide semiconductor coating material provided in an embodiment of the present invention, has the following advantages in its preparation process:

[0030] 1) Make full use of the redox reaction to generate Cu 2 O, in order to promote the reaction, add excess copper powder Cu, and copper powder Cu participates in the redox reaction to generate Cu 2 In addition to Al2O3, the remaining copper powder Cu in the semiconductor coating material can improve the electrical properties of the semiconductor coating material, reduce the surface resistance of the semiconductor ceramic material, improve the electrical corrosion resistance and chemical corrosion resistance of the semiconductor ceramic material, and increase the bonding strength between the semiconductor ceramic material and the Al2O3 matrix material.

[0031] 2)Cu 2 CuO is a red powdery solid with strong toxicity. It is extremely harmful to human body and environment, especially to water and its harm, which can easily cause environmental pollution. 2 O, poses less threat to human body and environment.

[0032] 3)Cu 2 The melting point of O is 1235℃, while that of CuO is 1026℃. The sintering melting point is appropriately lowered, making sintering easier.

[0033] 4) The silver nitrate and other components harmful to the environment and personnel in the currently common cuprous oxide semiconductor coating materials are removed, and deionized water is used instead of anhydrous ethanol as a solvent, which reduces the risk of easy volatilization of the coating during the preparation process.

[0034] The low-toxic cuprous oxide semiconductor coating material prepared by the raw material composition and the preparation method provided by the embodiment of the present invention has good comprehensive performance, a coating particle size of 5 to 10 μm, good workability, a softening temperature of 974° C. to 1012° C., a linear expansion coefficient of (6.8 to 7.6)×10 -6 / ℃(25℃~1000℃); volume resistivity<0.3MΩ·cm; when using general product fixtures and test conditions, the minimum discharge voltage is 900V at normal pressure, and the minimum discharge voltage is 1000V under kerosene dripping and 1.5 atmospheres.

[0035] Furthermore, the low-toxicity cuprous oxide semiconductor coating material prepared by the present invention is applied by dipping or spraying on the Al2 O 3 , ZrO 2 The ceramic surface is heated to 1260±10°C in a box-type electric furnace and kept warm for 30 minutes; after power failure, it is naturally cooled to below 150°C and taken out of the furnace to be sintered into parts with a coating. The coated parts prepared using the low-toxic cuprous oxide semiconductor coating material prepared by the embodiment of the present invention have high electrical corrosion resistance, chemical resistance, good thermal shock resistance, long service life, and the cumulative number of sparks can reach more than 1.3 million times. BRIEF DESCRIPTION OF THE DRAWINGS

[0036] The accompanying drawings are used to provide a further understanding of the technical solution of the present invention and constitute a part of the specification. Together with the embodiments of the present application, they are used to explain the technical solution of the present invention and do not constitute a limitation on the technical solution of the present invention.

[0037] Figure 1 A process flow chart of a method for preparing a low-toxic cuprous oxide semiconductor coating material provided by an embodiment of the present invention;

[0038] Figure 2 The schematic diagram is a semiconductor part in an aviation ignition semiconductor nozzle prepared by using the low-toxic cuprous oxide semiconductor coating material provided by an embodiment of the present invention. DETAILED DESCRIPTION

[0039] In order to make the purpose, technical solution and advantages of the present invention more clear, the embodiments of the present invention will be described in detail with reference to the accompanying drawings. It should be noted that the embodiments and features in the embodiments of the present application can be combined with each other arbitrarily without conflict.

[0040] The above background technology has already explained the basic structure of the ignition device for aircraft engine / starter technology. Specifically, the current ignition device for aircraft engine / starter technology adopts two different technical routes: one is semiconductor coating material, that is, the semiconductor raw material slurry is coated on Al 2 O 3 On the ceramic parts substrate, through high temperature sintering, on the Al 2 O 3 After a dense semiconductor coating is formed on the surface of the ceramic part, the part with the semiconductor coating is used as a discharge component of the electric ignition device. The other is that the SiC material is mixed with a metal oxide and molded into a green body with a certain shape. The green body is vacuum liquid-phase sintered to form a dense SiC semiconductor ceramic material, and the SiC semiconductor ceramic material is used as a discharge component of the electric ignition device.

[0041] The main component of the semiconductor coating material is Cu 2 O, according to formula (1-1)Cu 2O and Al at high temperature 2 O 3 The ceramic reacts to form CuAlO 2 :

[0042] Cu 2 O+A1 2 O 3 →2CuAlO 2 : (1-1)

[0043] CuAlO 2 It is a delafossite structure, a ρ-type semiconductor, a rhombohedral crystal system, with direct and indirect band gaps of 3.5eV and 1.8eV respectively. 2 In the crystal structure, the c-axis direction is a dumbbell-shaped O-Cu-O structure. In the direction perpendicular to the c-axis, each Al atom forms an A1O with 6 O atoms. 6 Octahedral structure, A1O 6 The CuAlO layers are stacked alternately with the closely packed Cu layers to form a layered CuAlO 2 Structure. ρ-type CuAlO 2 The localization reaction of oxygen ions at the valence band edge of semiconductor materials is relatively strong, and the attraction to holes is slightly greater, so the conductivity is 3 to 4 orders of magnitude lower than that of η-type transparent conductive oxides. Therefore, CuAlO can be improved by doping. 2 Electrical properties, its main conductive reason is metal defects and excess oxygen. Cu with negative temperature gradient coefficient 2 When the O coating is subjected to an external voltage, several electrical conductions are formed, current flows, resistance decreases, and current density increases. When the current density increases to a certain value, an "avalanche" capacitor discharge is formed, sparks are formed in the gap, and the fuel mixture is ignited. In addition, the instantaneous spark energy of the component is relatively large, which is suitable for harsh working environments such as high altitude, hot and cold shock, and heavy oil pollution.

[0044] However, Cu 2 O is highly toxic, and the maximum allowable concentration in the air is 0.1 mg / m 3 When the content in the air reaches 0.22~14mg / m 3 When the concentration of Cu 2 Semiconductor coating materials with O as the main material are not capable of being processed by spraying.

[0045] In order to solve the above problems, the present invention provides a low-toxicity cuprous oxide semiconductor coating material and a preparation method thereof. On the one hand, it changes the conventional method of directly using cuprous oxide Cu 2O raw material as the main material, adding other metal oxides as components; by changing the composition of the semiconductor coating material, the degree of harm to the environment and human body in the preparation process of the semiconductor coating material is reduced; on the other hand, specific metal oxides are added purposefully to reduce the volume resistance of the semiconductor ceramic material, improve the electrical corrosion resistance and chemical corrosion resistance of the semiconductor ceramic material, and increase the thermal conductivity of the semiconductor ceramic material with Al 2 O 3 , ZrO 2 Bonding strength of base material.

[0046] The present invention provides the following specific embodiments which can be combined with each other. The same or similar concepts or processes may not be described in detail in some embodiments.

[0047] A low-toxic cuprous oxide semiconductor coating material provided in an embodiment of the present invention; the composition of the low-toxic cuprous oxide semiconductor coating material provided in an embodiment of the present invention comprises copper oxide powder CuO and copper powder Cu as main components; Cr 2 O 3 , Fe 2 O 3 Metal oxides such as quartz and feldspar are used as additives (including at least the above two); kaolin, feldspar powder and quartz sand are used as mineralizers, and deionized water is used as solvent; the specific components and the mass ratios of the components are as shown in Table 1 below:

[0048] Table 1 Composition and mass ratio

[0049] Serial number name Chemical formula Content (wt%) 1 Copper oxide powder CuO 35～45 2 Copper powder Cu 8～12 3 Iron (III) oxide <![CDATA[Fe 2 THE 3 ]]> 7～9 4 Chromium trioxide <![CDATA[Cr 2 THE 3 ]]> 7～9 5 Feldspar powder <![CDATA[3Al 2 A 3 ·2SiO 2 Al 2 A 3 ]]> 5～8 6 Quartz sand <![CDATA[SiO 2 ]]> 18～22 7 Kaolin 5～7

[0050] It should be noted that the sum of the mass proportions of the various components in the above-mentioned low-toxic cuprous oxide-based semiconductor coating material is 100%.

[0051] The low-toxic cuprous oxide semiconductor coating material provided by the embodiment of the present invention is produced by reacting copper oxide powder CuO with excess copper powder Cu to form cuprous oxide Cu. 2 O ingredients, instead of directly using cuprous oxide Cu 2 The preparation method using cuprous oxide as the main material reduces the harm to the environment and human body during the preparation process of the cuprous oxide semiconductor coating material. The excess copper powder Cu in the reaction can improve the electrical properties of the semiconductor material coating. The chemical reaction principle of the preparation method provided in the embodiment of the present invention is:

[0052] CuO+Cu→Cu 2 O; (1-2)

[0053] The raw material components of the low-toxic cuprous oxide semiconductor coating material provided by the embodiment of the present invention have the following advantages in the preparation process:

[0054] 1) Make full use of the redox reaction to generate Cu 2 O, in order to promote the reaction, add excess copper powder Cu, and copper powder Cu participates in the redox reaction to generate Cu 2 In addition to O, the remaining copper powder Cu in the semiconductor coating material can improve the electrical properties of the semiconductor coating material.

[0055] 2)Cu 2 CuO is a red powdery solid with strong toxicity. It is extremely harmful to human body and environment, especially to water and its harm, which can easily cause environmental pollution. 2 O, poses less threat to human body and environment.

[0056] 3)Cu 2 The melting point of O is 1235℃, while that of CuO is 1026℃. The sintering melting point is appropriately lowered, making sintering easier.

[0057] 4) The silver nitrate and other components harmful to the environment and personnel in the currently common cuprous oxide semiconductor coating materials are removed, and deionized water is used instead of anhydrous ethanol as a solvent, which reduces the risk of easy volatilization of the coating during the preparation process.

[0058] Based on the low-toxicity cuprous oxide semiconductor coating material provided by the embodiment of the present invention, the embodiment of the present invention also provides a method for preparing the low-toxicity cuprous oxide semiconductor coating material, such as Figure 1 As shown, it is a process flow chart of a method for preparing a low-toxic cuprous oxide semiconductor coating material provided by an embodiment of the present invention; the preparation method comprises the following steps:

[0059] Weighing -> Calcination -> Mixing -> Ball Milling -> Coating -> Sintering -> Testing.

[0060] The low-toxic cuprous oxide semiconductor coating material prepared by the raw material composition and the preparation method provided by the embodiment of the present invention has good comprehensive performance, a coating particle size of 5 to 10 μm, good workability, a softening temperature of 974° C. to 1012° C., a linear expansion coefficient of (6.8 to 7.6)×10 -6 / ℃(25℃~1000℃); volume resistivity<0.3MΩ·cm; when using general product fixtures and test conditions, the minimum discharge voltage is 900V at normal pressure, and the minimum discharge voltage is 1000V under kerosene dripping and 1.5 atmospheres.

[0061] It should be noted that the application method of the prepared low-toxic cuprous oxide semiconductor coating material is: coating it on the Al 2 O 3, ZrO 2 The ceramic surface is heated to 1260±10°C in a box-type electric furnace and kept warm for 30 minutes; after power failure, it is naturally cooled to below 150°C and taken out of the furnace to be sintered into parts with a coating. The coated parts prepared using the low-toxic cuprous oxide semiconductor coating material prepared by the embodiment of the present invention have high electrical corrosion resistance, chemical resistance, good thermal shock resistance, long service life, and the cumulative number of sparks can reach more than 1.3 million times.

[0062] In addition, the low-toxic cuprous oxide-based semiconductor material provided by the embodiment of the present invention is not only suitable for aviation low-voltage high-energy semiconductor nozzles, but also suitable for other civilian ignition fields, such as automobiles, petrochemicals, etc.

[0063] The implementation effect of the low-toxicity cuprous oxide semiconductor coating material and the preparation method thereof provided by the embodiment of the present invention is described below through an implementation example:

[0064] Implementation Example

[0065] First, this embodiment provides a low-toxicity cuprous oxide semiconductor coating material. The raw material components and mass ratios for preparing the low-toxicity cuprous oxide semiconductor coating material are shown in Tables 2 to 5 below:

[0066] (1) Composition and weight percentage of semiconductor coating materials (Table 2):

[0067] Table 2

[0068]

[0069]

[0070] (2) Composition and weight percentage of semiconductor materials (Table 3):

[0071] Table 3

[0072] Chemical composition CuO Cu Wt.% 80～85 15～20

[0073] (3) Composition and weight percentage of conductive materials (Table 4):

[0074] Table 4

[0075] Chemical composition <![CDATA[Cr 2 THE 3 ]]> <![CDATA[Fe 2 THE 3 ]]> Wt.% 45～51 49～55

[0076] (4) Composition and weight percentage of mineralizer (Table 5):

[0077] Table 5

[0078] Chemical composition Feldspar powder Kaolin Quartz sand Wt.% 18～22 18～25 55～60

[0079] This implementation example performs the processing of semiconductor parts or components in a certain type of aviation ignition semiconductor nozzle according to the following steps:

[0080] Step 1, weigh all the powder materials required according to the formula as materials for preparation;

[0081] Step 2, after calcining the material, pass it through a 300-mesh sieve and pour it into a high-alumina porcelain ball mill. According to the material: ball (ceramic ball): water (deionized water) = 1:2:0.7, the loading factor is not more than 0.7, and wet ball milling is performed for 36 hours to form a slurry.

[0082] Step 3: Dip-coat the slurry on Al 2 O 3 The discharge end surface of the ceramic part is placed in a porous ceramic boat after natural drying.

[0083] like Figure 2 FIG. 1 is a schematic diagram of a semiconductor part in an aviation ignition semiconductor nozzle prepared using the low-toxic cuprous oxide semiconductor coating material provided by an embodiment of the present invention. Figure 2 Al 2 O 3 The ceramic matrix parts are shown as an example. Figure 2 As shown in Al 2 O 3 The ceramic base part is a ceramic piece used for assembling to form a semiconductor nozzle, has a central combined through hole, and the front end of the part needs to be coated with a semiconductor coating material.

[0084] Step 4, place the porcelain boat into a box-type high-temperature electric furnace, heat it to 1260±10°C, and keep it warm for 30 minutes; after power off, cool it naturally to below 150°C and take it out of the furnace to sinter it into parts with coatings.

[0085] Furthermore, the method provided by the embodiment of the present invention may also include:

[0086] Step 5, measuring the semiconductor component having the semiconductor coating after sintering.

[0087] This step includes the following measurements:

[0088] ①Surface resistance measurement;

[0089] Use a sensitive resistor meter and select the 1st level applied voltage 500V to measure the resistance between the two electrodes of the sample;

[0090] ②Minimum discharge voltage measurement

[0091] It has been verified that the low-toxic cuprous oxide semiconductor coating material prepared by the embodiment of the present invention has good comprehensive properties: ① the coating particle size is 5 to 10 μm, and it has good workability; ② the softening temperature is 974°C to 1012°C, the sintering temperature is low, and energy is saved; ③ the linear expansion coefficient is (6.8 to 7.6)×10-6 / °C (25°C to 1000°C), which matches the linear expansion coefficient of Al2O3, thereby improving the bonding strength; ④ the volume resistivity is <0.3MΩ·cm; when using general product fixtures and test conditions, the minimum discharge voltage is 900V at normal pressure, and the minimum discharge voltage is 1000V under kerosene dripping and 1.5 atmospheres.

[0092] The toxic cuprous oxide semiconductor coating material provided in the embodiment of the present invention is specifically formed by the reaction of CuO with excess Cu powder to form Cu 2 O, instead of directly using Cu 2 O raw material as the main material, reducing Cu 2 The harm to the environment and human body during the preparation of O semiconductor coating materials. The excess Cu powder in the reaction can increase the CuAlO 2 Electrical properties, reduce the surface resistance of semiconductor ceramic materials, improve the electrical corrosion resistance and chemical corrosion resistance of semiconductor ceramic materials, and increase the bonding strength between semiconductor ceramic materials and Al2O3 matrix materials.

[0093] Although the embodiments disclosed in the present invention are as above, the contents are only embodiments adopted to facilitate understanding of the present invention and are not intended to limit the present invention. Any technician in the field to which the present invention belongs can make any modifications and changes in the form and details of implementation without departing from the spirit and scope disclosed in the present invention, but the patent protection scope of the present invention shall still be subject to the scope defined in the attached claims.

Claims

1. A low-toxic cuprous oxide semiconductor coating material, characterized in that: The raw materials used to prepare the low-toxic cuprous oxide semiconductor coating material include copper oxide powder CuO and copper powder Cu as main components; at least two metal oxides are used as additives, including at least Cr2O3 and Fe2O3; kaolin, feldspar powder and quartz sand are used as mineralizers, and deionized water is used as a solvent; the mass proportions of the raw materials are respectively: The sum of the mass proportions of the above components is 100%.

2. The low-toxic cuprous oxide semiconductor coating material according to claim 1, characterized in that: In the preparation process of the low-toxic cuprous oxide semiconductor coating material, the preparation method of directly using cuprous oxide Cu2O raw material as the main material is replaced by a method in which copper oxide powder CuO reacts with excess copper powder Cu to generate cuprous oxide Cu2O; wherein the chemical formula of the reaction of copper oxide powder CuO with excess copper powder Cu is: CuO+Cu→Cu2O; Among them, compared with the cuprous oxide Cu2O generated during the reaction, which is highly toxic, the copper oxide powder CuO used in the preparation of the raw material is less toxic; the excess copper powder Cu in the raw material is used to improve the electrical properties of the semiconductor material coating.

3. The low-toxic cuprous oxide semiconductor coating material according to claim 2, characterized in that: The melting point of cuprous oxide Cu2O is 1235°C, and the melting point of copper oxide powder CuO used in the preparation of raw materials is 1026°C. Using copper oxide powder CuO to replace cuprous oxide Cu2O as a raw material can reduce the sintering melting point and facilitate the sintering process.

4. The low-toxic cuprous oxide semiconductor coating material according to claim 1, characterized in that: Deionized water is used as a solvent instead of anhydrous ethanol in the raw materials used to prepare low-toxic cuprous oxide semiconductor coating materials, thereby reducing the risk of easy volatilization of the coating during the preparation process.

5. A method for preparing a low-toxic cuprous oxide semiconductor coating material, characterized in that: include: Step 1, weighing the required powder according to the composition and mass ratio of the raw material of the low-toxic cuprous oxide semiconductor coating material described in any one of claims 1 to 4 as the material for preparation; Step 2, after calcining the material weighed in step 1, pass it through a 300-mesh sieve, pour it into a high-alumina porcelain ball mill, add ceramic balls and deionized water according to a preset ratio, and form a slurry through wet ball milling.

6. The method for preparing a low-toxic cuprous oxide semiconductor coating material according to claim 5, characterized in that: In the step 2, the material: ball (ceramic ball): water (deionized water) = 1:2:0.7, the loading factor is not greater than 0.7, and wet ball milling is performed for 36 hours to form a slurry.

7. The low-toxic cuprous oxide semiconductor coating material according to claim 5 or 6, characterized in that: The application of the prepared low-toxic cuprous oxide semiconductor coating material is as follows: The slurry prepared in claim 5 or 6 is applied to the surface of an Al2O3 ceramic part or a ZrO2 ceramic part by dipping or spraying, and sintered in an electric furnace to form a part with a coating attached thereto; The accumulated spark count of the coated parts formed by the low-toxic cuprous oxide semiconductor coating material can reach more than 1.3 million times.

8. The low-toxic cuprous oxide-based semiconductor coating material according to claim 7, characterized in that: The application method of the low-toxic cuprous oxide semiconductor coating material includes: Step 3, dip-coating the slurry on the discharge end surface of the Al2O3 ceramic part or the ZrO2 ceramic part, and placing it in a porous ceramic boat after natural drying; Step 4, place the porcelain boat into a box-type high-temperature electric furnace, heat it to 1260±10°C, and keep it warm for 30 minutes; after power off, cool it naturally to below 150°C and take it out of the furnace to sinter it into parts with coatings.

9. The low-toxic cuprous oxide-based semiconductor coating material according to claim 8, characterized in that: The application method of the low-toxic cuprous oxide semiconductor coating material also includes: Step 5, measuring the performance of the semiconductor component with the semiconductor coating after sintering, including: surface resistance measurement and minimum discharge voltage measurement.

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