MPCVD cavity and MPCVD device

Abstract

The invention provides an MPCVD cavity and an MPCVD device, belongs to the technical field of microwave plasmas, and solves the problem of relatively low diamond deposition utilization rate in the prior art. The device comprises a first cavity, a second cavity and a deposition table, the first cavity is used for transmitting and guiding microwaves, the second cavity is arranged below the first cavity to receive the microwaves, the deposition table is arranged in the second cavity, and a microwave electric field focusing area can be formed above the deposition table; the horizontal section of the second cavity is square, so that the horizontal section of the microwave electric field focusing area is square. The second cavity can generate the plasma with the square covering shape, the plasma with the square covering shape can effectively utilize all plasma deposition areas to grow the single crystal diamond, the deposition utilization rate is improved, and distortion of the plasma shape caused by a rectangular substrate can be avoided; the strongest focusing electric field is generated on the deposition table, so that the plasma intensity and the forming efficiency are improved.

Description

Technical Field

[0001] The present application belongs to the field of microwave plasma technology, and specifically, relates to an MPCVD cavity and an MPCVD device. Background Art

[0002] The existing MPCVD (microwave plasma chemical vapor deposition) equipment structure includes a microwave cavity assembly, a base, and a lifting structure, and the diamond growth substrate is placed on the top of the base. When working, the microwaves generated by the microwave generator are transmitted to the microwave cavity assembly through the waveguide device, and reaction gases such as CH4 and H2 are introduced through the special gas pipeline. At the same time, a certain degree of vacuum is maintained in the microwave cavity. When microwave energy acts on the reaction gas molecules, the electrons inside the molecules are excited and transition to high energy levels, thereby generating excited molecules. These excited molecules will collide with other molecules, transfer energy to other molecules, and ultimately lead to the ionization of gas molecules and the formation of plasma.

[0003] However, since the MPCVD devices in the prior art are all rotary, the plasma coverage area they generate is circular. When used to grow rectangular diamonds, a large amount of deposition area cannot be effectively utilized. In addition, if a rectangular diamond substrate is placed in a plasma with a circular coverage area, the shape of the plasma will be distorted to a certain extent, thereby reducing the growth quality of the diamond edge.

[0004] Based on the above content, the technical problem to be solved by this application is: how to improve the utilization rate of diamond deposition. Summary of the invention

[0005] The purpose of this application is to address the above problems existing in the prior art and propose an MPCVD chamber and MPCVD device to solve the problem of poor diamond deposition utilization in the prior art. The technical effect of the solution of this application is to improve the diamond deposition utilization rate.

[0006] The objectives of the present application can be achieved through the following technical solutions: an MPCVD cavity, comprising: a first cavity, the first cavity is used to transmit and guide microwaves; a second cavity, the second cavity is arranged below the first cavity to receive the microwaves; and a deposition table, the deposition table is arranged in the second cavity, and a microwave electric field focusing area can be formed above the deposition table; wherein the horizontal cross-section of the second cavity is square so that the horizontal cross-section of the microwave electric field focusing area is square.

[0007] It can be understood that a receiving port is provided at the top of the first cavity, and an antenna is provided inside the first cavity. The antenna is used to transmit microwaves, and the receiving port is used to allow the outer conductor outside the first cavity to enter, so that the outer conductor is connected to the antenna to realize the input and transmission of microwaves. Exemplarily, the antenna generally includes a vertical part and a horizontal part. The first cavity is connected to the second cavity, so that the microwave in the first cavity can enter the second cavity. Since the horizontal cross-section inside the second cavity is square, the microwave is easy to touch the four inner walls of the second cavity after being transmitted downward and reflected back to the central area, so that a microwave electric field focusing area is formed inside the second cavity. By arranging a deposition table below the microwave electric field focusing area, a diamond film is quickly deposited on the deposition table to form a diamond film. In addition, since the formed microwave electric field focusing area is square, that is, the horizontal cross-section of the plasma formed by the microwave-excited reaction gas is also square, the diamond film deposited on the deposition table can also be square, thereby improving the deposition utilization rate and saving consumables and deposition time.

[0008] In the above-mentioned MPCVD chamber, the side length of the horizontal cross section of the second chamber is Wherein, λ is the wavelength of microwaves, and n is a natural number. It can be understood that when the length and width of the horizontal section of the second cavity are 2λ, theoretically, there is the strongest microwave resonance in the second cavity, thereby generating the strongest electric field, but at this time, the number of microwave modes in the vertical direction is 0, resulting in the electric field in the second cavity being purely vertical and unable to be focused on the deposition table. Therefore, it is necessary to make the length and width of the horizontal section of the second cavity 5% to 10% lower than 2λ, so that the number of microwave modes in the vertical direction becomes 1, and at this time, the strongest focusing electric field will be generated on the deposition table.

[0009] In the above-mentioned MPCVD cavity, the inner wall of the second cavity includes a plurality of reflection cone angles, and the plurality of reflection cone angles are respectively oriented toward the microwave electric field focusing area. The plurality of reflection cone angles can be symmetrically arranged with respect to the center of the deposition platform. It can be understood that the inner wall of the second cavity has a plurality of reflection cone angles, and the angle of the reflection cone angle is preferably 90°, so that a microwave electric field dispersion area is formed in the area close to each reflection cone angle, and the microwave is reflected by the reflection cone angle to the microwave electric field focusing area above the deposition platform, and the center of each microwave electric field dispersion area is the microwave electric field focusing area.

[0010] In the above-mentioned MPCVD cavity, a third cavity is further provided between the first cavity and the second cavity, the third cavity is connected to the second cavity, and the third cavity is cylindrical. It can be understood that the third cavity, as a transition support between the first cavity and the second cavity, can ensure that the microwave remains uniform in the circumferential direction before entering the second cavity, thereby ensuring that the microwave can be effectively reflected to form a square microwave electric field focusing area after entering the second cavity.

[0011] In the above-mentioned MPCVD cavity, the sum of the height of the third cavity and the height of the second cavity is 0.48λ~0.52λ, and the height of the second cavity is ≥0.25λ, wherein λ is the microwave wavelength. The sum of the heights of the second cavity and the third cavity is 0.5λ (a deviation of ±0.02λ is allowed). This is to ensure that there is only one strong electric field in the vertical direction in the TM mode cavity. The purpose is to form only a single plasma, so that deposition can be more concentrated. And to ensure that the cuboid has a sufficient effect on microwave resonance. It should be noted that the height of the second cavity needs to be higher than 0.25λ to ensure that it has sufficient confinement effect on the fed microwaves.

[0012] In the above-mentioned MPCVD cavity, the inner diameter of the third cavity is smaller than the inner diameter of the wave-transmitting member, and the inner diameter of the third cavity is smaller than the side length of the horizontal cross section of the second cavity. It can be understood that by configuring the inner diameter of the third cavity to be smaller than the side length of the horizontal cross section of the second cavity, the uniformity after microwave transmission can be ensured.

[0013] In the above-mentioned MPCVD chamber, the upper surface of the deposition table is square. It is understandable that by configuring the deposition table to be square, it can match the plasma with a square cross-section, facilitating the deposition of a square diamond film on its surface, thereby improving the deposition utilization rate.

[0014] In the above-mentioned MPCVD chamber, the wave-transmitting element is annular and made of quartz. It can be understood that the wave-transmitting element made of quartz can allow microwaves to pass through and has high heat resistance to prevent thermal cracking.

[0015] In the above-mentioned MPCVD chamber, the second chamber is provided with an opening, and the opening can accommodate the deposition table, and the deposition table has freedom of movement in the vertical direction. It can be understood that by providing an opening on the second chamber to accommodate a movable deposition table, the deposition table can be adjusted up and down based on the position of the plasma, thereby improving the deposition efficiency.

[0016] Another object of the present application is to provide an MPCVD device, comprising: an MPCVD chamber as described above and a lifting mechanism, wherein the lifting mechanism is disposed below the deposition table, and the lifting mechanism acts on the deposition table so that the deposition table has a vertical degree of freedom of movement. It is understandable that by providing a lifting mechanism, the deposition table can be driven to move up and down to adjust the position. For example, the lifting mechanism can be a screw rod, which has a high linear movement accuracy and is not easy to skew, so as to ensure that the upper surface of the deposition table is always parallel to the horizontal plane.

[0017] Compared with the prior art, this application has the following beneficial effects:

[0018] 1. The second cavity of the present application can generate a plasma with a square covering shape. The plasma with a square covering shape can effectively utilize all the plasma deposition area to grow single crystal diamond, that is, improve the deposition utilization rate and avoid the distortion of the plasma shape caused by the rectangular substrate;

[0019] 2. The present application configures the side length of the horizontal cross section of the second cavity to That is, the length and width of the horizontal cross section of the second cavity are controlled to be 5% to 10% lower than 2λ, so that the number of microwave modes in the vertical direction becomes 1, at which time the strongest focusing electric field will be generated on the deposition stage, thereby improving the intensity and formation efficiency of the plasma;

[0020] 3. The present application sets reflection cone angles around the inner wall of the second cavity, and the angle of the reflection cone angle is configured to be 90°, so as to ensure that the microwave electric field is concentrated in the central area of ​​the second cavity to form a microwave electric field focusing area, and the formed microwave electric field focusing area is square, and the shape of the microwave electric field is highly controllable;

[0021] 4. The present application sets a third cavity with a transition support between the first cavity and the second cavity. The third cavity is cylindrical, which can ensure that the microwave remains uniform in the circumferential direction before entering the second cavity, thereby ensuring that the microwave can be effectively reflected to form a microwave electric field of a specific shape after entering the second cavity. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] Figure 1 It is a simplified structural schematic diagram of the MPCVD chamber of the present application;

[0023] Figure 2 It is a simplified structural schematic diagram of the MPCVD device of the present application;

[0024] Figure 3 This is a schematic diagram of the microwave electric field distribution in the second cavity of the present application. Figure 1 ;

[0025] Figure 4 This is a schematic diagram of the microwave electric field distribution in the second cavity of the present application. Figure 2 ;

[0026] In the figure, 100, first cavity; 110, receiving port; X, antenna; 200, second cavity; 210, opening; 220, reflection cone angle; 300, deposition table; 400, wave-transparent component; 500, third cavity; 600, lifting mechanism; G, microwave electric field focusing area; H, microwave electric field dispersion area. DETAILED DESCRIPTION

[0027] In order to make the above-mentioned purposes, features and advantages of the present application more obvious and easy to understand, the specific embodiments of the present application are described in detail below in conjunction with the accompanying drawings. In the following description, many specific details are set forth to facilitate a full understanding of the present application. However, the present application can be implemented in many other ways different from those described herein, and those skilled in the art can make similar improvements without violating the connotation of the present application, so the present application is not limited by the specific embodiments disclosed below.

[0028] In the description of the present application, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present application.

[0029] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include at least one of the features. In the description of this application, the meaning of "plurality" is at least two, such as two, three, etc., unless otherwise clearly and specifically defined.

[0030] In this application, unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements, unless otherwise clearly defined. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to specific circumstances.

[0031] In the present application, unless otherwise clearly specified and limited, a first feature being “above” or “below” a second feature may mean that the first and second features are in direct contact, or the first and second features are in indirect contact through an intermediate medium. Moreover, a first feature being “above”, “above”, and “above” a second feature may mean that the first feature is directly above or obliquely above the second feature, or simply means that the first feature is higher in level than the second feature. A first feature being “below”, “below”, and “below” a second feature may mean that the first feature is directly below or obliquely below the second feature, or simply means that the first feature is lower in level than the second feature.

[0032] It should be noted that when an element is referred to as being "fixed to" or "disposed on" another element, it may be directly on the other element or there may be a central element. When an element is considered to be "connected to" another element, it may be directly connected to the other element or there may be a central element at the same time. The terms "vertical", "horizontal", "upper", "lower", "left", "right" and similar expressions used herein are for illustrative purposes only and are not intended to be the only embodiment.

[0033] Please refer to the attached drawings in the instruction manual. Figure 1 and Figure 2 The MPCVD cavity of the present application includes a first cavity 100 and a second cavity 200. The first cavity 100 is used to receive and transmit microwaves. The second cavity 200 is arranged below the first cavity 100 to receive microwaves. A deposition platform 300 is provided in the second cavity 200. A microwave electric field focusing area G can be formed above the deposition platform 300. The horizontal cross-section of the second cavity 200 is square so that the horizontal cross-section of the microwave electric field focusing area G is square.

[0034] It can be understood that a receiving port 110 is provided at the top of the first cavity 100, and an antenna X is provided inside the first cavity 100. The antenna X is used to transmit microwaves, and the receiving port 110 is used to allow the external conductor outside the first cavity 100 to enter, so that the external conductor is connected to the antenna X to achieve microwave input and transmission. Exemplarily, the antenna X generally includes a vertical part and a horizontal part, and the first cavity 100 is connected to the second cavity 200, so that the microwaves in the first cavity 100 can enter the second cavity 200. Since the horizontal cross-section inside the second cavity 200 is square, the microwaves are easily touched by the four inner walls of the second cavity 200 after being transmitted downward and reflected back to the central area, so that a microwave electric field focusing area G is formed inside the second cavity 200, and a deposition platform 300 is arranged below the microwave electric field focusing area G to quickly deposit a diamond film on the deposition platform 300. Furthermore, since the microwave electric field focusing area G is square, that is, the horizontal cross-section of the plasma formed by the microwave excited reaction gas is also square, the diamond film deposited on the deposition table 300 can also be square, thereby improving the deposition utilization rate and saving consumables and deposition time.

[0035] In some embodiments, the side length of the horizontal cross section of the second cavity 200 is Wherein, λ is the wavelength of microwaves, and n is a natural number. It can be understood that when the length and width of the horizontal cross section of the second cavity 200 are 2λ, theoretically, the second cavity 200 has the strongest microwave resonance, thereby generating the strongest electric field, but at this time, the number of microwave modes in the vertical direction is 0, resulting in the electric field in the second cavity 200 being purely vertical and unable to be focused on the deposition platform 300. Therefore, the length and width of the horizontal cross section of the second cavity 200 need to be 5% to 10% lower than 2λ, so that the number of microwave modes in the vertical direction becomes 1, and at this time, the strongest focusing electric field will be generated on the deposition platform 300.

[0036] See also Figure 3 In some embodiments, the inner wall of the second cavity 200 includes a plurality of reflection cone angles 220, each of which faces the microwave electric field focusing area G, and each of which is symmetrically arranged around the center of the deposition platform 300. It can be understood that the inner wall of the second cavity 200 has a plurality of reflection cone angles 220, and the reflection cone angles 220 reflect microwaves to the microwave electric field focusing area G, and the angle of the reflection cone angle 220 is preferably 90°, so that a microwave electric field dispersion area H is formed in an area close to each reflection cone angle 220, and the center of each microwave electric field dispersion area H is the microwave electric field focusing area G.

[0037] In some embodiments, a third cavity 500 is further provided between the first cavity 100 and the second cavity 200, the third cavity 500 is connected to the second cavity 200, and the third cavity 500 is cylindrical. It can be understood that the third cavity 500, as a transition support between the first cavity 100 and the second cavity 200, can ensure that the microwave remains uniform in the circumferential direction before entering the second cavity 200, thereby ensuring that the microwave can be effectively reflected to form a square microwave electric field focusing area G after entering the second cavity 200.

[0038] In some embodiments, the sum of the height of the third cavity 500 and the height of the second cavity 200 is 0.48λ to 0.52λ, and the height of the second cavity 200 is ≥ 0.25λ, where λ is the microwave wavelength. The sum of the heights of the second cavity 200 and the third cavity 500 is 0.5λ (a deviation of ±0.02λ is allowed). This is to ensure that there is only one strong electric field in the vertical direction in the TM mode cavity. The purpose is to form only a single plasma, so that deposition can be more concentrated. And to ensure that the cuboid has a sufficient effect on microwave resonance. It should be noted that the height of the second cavity 200 needs to be higher than 0.25λ to ensure that it has sufficient confinement on the fed microwaves.

[0039] In some embodiments, the inner diameter of the third cavity 500 is smaller than the inner diameter of the wave-transmitting member 400, and the inner diameter of the third cavity 500 is smaller than the side length of the horizontal cross section of the second cavity 200. It can be understood that by configuring the inner diameter of the third cavity 500 to be smaller than the side length of the horizontal cross section of the second cavity 200, the uniformity after microwave transmission can be ensured.

[0040] In some embodiments, the upper surface of the deposition platform 300 is square. It is understood that by configuring the deposition platform 300 to be square, it can match the plasma with a square cross-section, facilitate the deposition of a square diamond film on its surface, and thus improve the deposition utilization rate.

[0041] In some embodiments, the wave-transmitting member 400 is annular and made of quartz. It is understood that the wave-transmitting member 400 made of quartz can allow microwaves to pass through and has high heat resistance to prevent thermal cracking.

[0042] In some embodiments, the second chamber 200 is provided with an opening 210, and the opening 210 can accommodate the deposition table 300, and the deposition table 300 has a degree of freedom of movement in the vertical direction. It can be understood that by providing the opening 210 on the second chamber to accommodate the movable deposition table 300, the deposition table 300 can be adjusted up and down based on the position of the plasma, thereby improving the deposition efficiency.

[0043] Example 1

[0044] See also Figure 3 The operator exemplarily uses a microwave frequency of 2450 MHz, the corresponding microwave wavelength λ=122 mm, n is 0, that is, the side length of the horizontal section of the second cavity 200 is configured to be 232 mm, the height of the second cavity 200 is configured to be 45 mm, and the height of the third cavity 500 is configured to be 16 mm. The horizontal direction of the deposition platform 300 forms an angle of 45° with the second cavity 200.

[0045] Example 2

[0046] See also Figure 4 The operator exemplarily uses a microwave frequency of 915 MHz, the corresponding microwave wavelength λ=328 mm, and n is 1, that is, the side length of the horizontal section of the second cavity 200 is configured to be 1087 mm, the height of the second cavity 200 is configured to be 121 mm, and the height of the third cavity 500 is configured to be 43 mm. The horizontal direction of the deposition platform 300 is the same as that of the second cavity 200.

[0047] It should be noted that the microwave frequency used in Example 1 and Example 2 is a relatively common power in industry. The microwave frequency, the size of the second cavity 200 and the position of the deposition platform 300 of the present application can be adaptively adjusted based on the diamond deposition environment. Due to the periodicity of microwave resonance, the horizontal direction of the square electric field will show periodic changes as the length of the horizontal cross section of the second cavity 200 increases. For every increase of √2λ in the length of the horizontal cross section of the second cavity 200, the microwave electric field focusing area G at the bottom center of the second cavity 200 will rotate 45°. Different sizes of the second cavity 200 can be selected according to the actual microwave power requirements. The deposition platform 300 is a rectangular parallelepiped with a square upper surface. Since the horizontal direction of the microwave electric field focusing area G is periodic, when n is an odd number, the horizontal direction of the deposition platform 300 should be the same as that of the second cavity 200; when n is an even number, the horizontal direction of the deposition platform 300 should be at an angle of 45° with the second cavity 200.

[0048] In addition, the MPCVD device of the present application includes an MPCVD chamber and a lifting mechanism 600, which is disposed below the deposition platform 300, and the lifting mechanism 600 acts on the deposition platform 300 to allow the deposition platform 300 to have a vertical degree of freedom of movement. It can be understood that by providing the lifting mechanism 600, the deposition platform 300 can be driven to move up and down to adjust the position. For example, the lifting mechanism 600 can be a screw rod, which has a high linear movement accuracy and is not easy to skew, so as to ensure that the upper surface of the deposition platform 300 is always parallel to the horizontal plane.

[0049] Working process:

[0050] The microwave is fed from the receiving port 110 at the top of the first cavity 100, guided by the antenna X inside the first cavity 100, passes through the wave-transmitting member 400, and enters the second cavity 200 after passing through the third cavity 500, forming a high-intensity focusing electric field at the center of the bottom of the second cavity 200, and the reflection of the microwave by the reflection cone angle 220 of the inner wall of the second cavity 200 forms an electric field with a square covering shape, thereby exciting and generating a plasma with a square covering shape.

[0051] Beneficial effects:

[0052] The second cavity 200 of the present application can generate a plasma with a square covering shape. The plasma with a square covering shape can effectively utilize all the plasma deposition area to grow single crystal diamond, that is, improve the deposition utilization rate and avoid the distortion of the plasma shape caused by the rectangular substrate. By configuring the side length of the horizontal cross section of the second cavity 200 to That is, the length and width of the horizontal cross section of the second cavity 200 are controlled to be 5% to 10% lower than 2λ, so that the number of microwave modes in the vertical direction becomes 1, and the strongest focusing electric field will be generated on the deposition table 300 at this time, thereby improving the intensity and formation efficiency of the plasma; by setting reflection cone angles 220 around the inner wall of the second cavity 200, and the angle of the reflection cone angle 220 is configured to be 90°, it is ensured that the microwave electric field is concentrated in the central area of ​​the second cavity 200 to form a microwave electric field focusing area G, and the formed microwave electric field focusing area G is square, and the shape of the microwave electric field is highly controllable; by setting a third cavity 500 with a transition support between the first cavity 100 and the second cavity 200, the third cavity 500 is cylindrical, which can ensure that the microwave remains uniform in the circumferential direction before entering the second cavity 200, thereby ensuring that the microwave can be effectively reflected after entering the second cavity 200 to form a microwave electric field of a specific shape.

[0053] The specific embodiments described herein are merely examples of the spirit of the present application. A person skilled in the art of the present application may make various modifications or additions to the specific embodiments described or replace them in a similar manner, but this will not deviate from the spirit of the present application or exceed the scope defined by the attached claims.

Claims

1. An MPCVD chamber, characterized in that: include: A first cavity (100), wherein the first cavity (100) is used to transmit and guide microwaves; a second cavity (200), the second cavity (200) being arranged below the first cavity (100) to receive the microwave; as well as A deposition platform (300), the deposition platform (300) being arranged in the second cavity (200), and a microwave electric field focusing area (G) being formed above the deposition platform (300); Wherein, the horizontal cross-section of the second cavity (200) is square so that the horizontal cross-section of the microwave electric field focusing area (G) is square.

2. The MPCVD chamber according to claim 1, characterized in that: The side length of the horizontal cross section of the second cavity (200) is Wherein, λ is the wavelength of microwaves, and n is a natural number.

3. The MPCVD chamber according to claim 1, characterized in that: The inner wall of the second cavity (200) comprises a plurality of reflection cone angles (220), and the plurality of reflection cone angles (220) are respectively oriented toward the microwave electric field focusing region (G).

4. The MPCVD chamber according to claim 1, characterized in that: A third cavity (500) is further provided between the first cavity (100) and the second cavity (200); the third cavity (500) is communicated with the second cavity (200), and the third cavity (500) is cylindrical.

5. The MPCVD chamber according to claim 4, characterized in that: The sum of the height of the third cavity (500) and the height of the second cavity (200) is 0.48λ-0.52λ, and the height of the second cavity (200) is ≥0.25λ, wherein λ is the wavelength of the microwave.

6. The MPCVD chamber according to claim 4, characterized in that: A wave-transparent member (400) is provided between the third cavity (500) and the first cavity (100), the wave-transparent member (400) allowing microwaves to pass through, the inner diameter of the third cavity (500) is smaller than the inner diameter of the wave-transparent member (400), and the inner diameter of the third cavity (500) is smaller than the side length of the horizontal cross section of the second cavity (200).

7. The MPCVD chamber according to claim 6, characterized in that: The wave-transmitting component (400) is ring-shaped and is made of quartz.

8. The MPCVD chamber according to claim 1, characterized in that: The upper surface of the deposition platform (300) is square.

9. The MPCVD chamber according to claim 1, characterized in that: The second cavity (200) is provided with an opening (210), and the opening (210) can accommodate the deposition platform (300), and the deposition platform (300) has freedom of movement in a vertical direction.

10. An MPCVD device, characterized in that: include: The MPCVD chamber according to any one of claims 1 to 9; A lifting mechanism (600) is disposed below the deposition platform (300), and the lifting mechanism (600) acts on the deposition platform (300) to allow the deposition platform (300) to have a degree of freedom of movement in a vertical direction.

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