High-frequency terahertz heterodyne mixer and preparation method and application thereof

Abstract

The invention belongs to the technical field of terahertz photoelectric detection, and provides a high-frequency terahertz heterodyne mixer and a preparation method and application thereof. The high-frequency terahertz heterodyne mixer comprises a substrate layer, an absorption layer and a medium protection layer, wherein the substrate layer and the absorption layer are stacked; the absorption layer comprises an end metal electrode layer and a tantalum-nickel-tellurium layer which are arranged dispersedly. Tantalum-nickel-tellurium has a nonlinear Hall effect, and the nonlinear Hall effect can overcome the limitation of a thermal voltage threshold and electronic conversion time, and the mechanism is theoretically not influenced by the cut-off frequency of a traditional mixer. According to the terahertz heterodyne mixer, a terahertz heterodyne mixer in a broadband frequency range is constructed by utilizing a nonlinear Hall effect generated by surface state symmetry breaking of tantalum-nickel-tellurium, and the terahertz heterodyne mixer can realize fundamental wave mixing of a radio frequency signal and a local oscillator signal in the broadband frequency range and has higher harmonic mixing capability; meanwhile, the method can be used for high-order frequency multiplication of low-frequency signals.

Description

Technical Field

[0001] The present invention relates to the field of terahertz photoelectric detection technology, and in particular to a high-frequency terahertz heterodyne mixer and a preparation method and application thereof. Background Art

[0002] The heterodyne mixing detector converts the measured terahertz signal into an intermediate frequency signal in the microwave radio frequency band by mixing the measured terahertz signal with a low-noise local coherent terahertz signal, and then detects it. This can effectively improve the detection sensitivity, and can also synchronously obtain the amplitude, phase and frequency information of the measured terahertz signal. Therefore, it has become a core device for applications such as terahertz radar, communication and spectral imaging. At present, the active material of the absorption layer of traditional heterodyne mixing detectors is mainly transistors of III-V compound semiconductors. However, due to the limitations of III-V compound semiconductor transistors, the performance of heterodyne mixing detectors in high-frequency and weak signal environments is still facing challenges. Summary of the invention

[0003] In view of this, the purpose of the present invention is to provide a high-frequency terahertz heterodyne mixer and its preparation method and application. The high-frequency terahertz heterodyne mixer provided by the present invention can achieve mixing of high-frequency signals and can also be used for high-order frequency multiplication of low-frequency signals (i.e. weak signals).

[0004] In order to achieve the above-mentioned object of the invention, the present invention provides the following technical solutions:

[0005] The present invention provides a high-frequency terahertz heterodyne mixer, comprising a substrate layer, an absorption layer and a dielectric protection layer, wherein the substrate layer and the absorption layer are stacked;

[0006] The base layer includes an intrinsic high-resistance silicon layer and a silicon dioxide layer stacked in layers, and the silicon dioxide layer is in contact with the absorption layer;

[0007] The absorption layer includes dispersed terminal metal electrode layers and tantalum-nickel-telluride layers; the number of the terminal metal electrode layers is 4, and the 4 terminal metal electrode layers are symmetrically distributed in the transverse and longitudinal directions of the tantalum-nickel-telluride layers, and the tantalum-nickel-telluride layers are located at the center of the region formed by the 4 terminal metal electrode layers, and the tantalum-nickel-telluride layers are in contact with the 4 terminal metal electrode layers;

[0008] The dielectric protection layer wraps the tantalum-nickel-telluride layer.

[0009] Preferably, the resistivity of the intrinsic high-resistance silicon layer is 20000-25000Ω·cm, and the thickness is 300-400μm.

[0010] Preferably, the thickness of the silicon dioxide layer is 300-400 nm.

[0011] Preferably, the terminal metal electrode layer comprises a chromium layer and a gold layer which are stacked, and the chromium layer is in contact with the silicon dioxide layer.

[0012] Preferably, the thickness of the chromium layer is 10-15 nm, and the thickness of the gold layer is 20-30 nm.

[0013] Preferably, the thickness of the tantalum nickel tellurium layer is 40-100 nm.

[0014] Preferably, the dielectric protection layer is made of boron nitride, and the thickness of the dielectric protection layer is 20-50 nm.

[0015] Preferably, the high-frequency terahertz heterodyne mixer further comprises a PCB base, and the intrinsic high-resistance silicon layer in the high-frequency terahertz heterodyne mixer is in contact with the PCB base;

[0016] The PCB base is an SMA interface output.

[0017] The present invention also provides a method for preparing the high-frequency terahertz heterodyne mixer described in the above technical solution, comprising the following steps:

[0018] (1) using ultraviolet photolithography to photolithograph the base layer to obtain a structure of four terminal metal electrode layers, and then using electron beam evaporation to prepare the four terminal metal electrode layers;

[0019] (2) mechanically exfoliating the single crystal tantalum nickel telluride to obtain a tantalum nickel telluride thin sheet, and transferring the tantalum nickel telluride thin sheet to the surface of the substrate layer to form a tantalum nickel telluride layer;

[0020] (3) Wrapping the tantalum nickel telluride layer with a dielectric protective layer to obtain the high-frequency terahertz heterodyne mixer.

[0021] The present invention also provides the application of the high-frequency terahertz heterodyne mixer described in the above technical solution or the high-frequency terahertz heterodyne mixer prepared by the preparation method described in the above technical solution in AC electromagnetic wave mixing.

[0022] The invention provides a high-frequency terahertz heterodyne mixer.

[0023] Tantalum nickel telluride is a topological nodal line semimetal material. Its crystal has a unique topological state in which strong and weak topological orders coexist, and has strong anisotropy. At the same time, tantalum nickel telluride has a nonlinear Hall effect, which exists from low temperature (2K) to room temperature (300K). Since the nonlinear Hall effect can overcome the limitations of thermal voltage threshold and electronic conversion time, and this mechanism is theoretically not affected by the cut-off frequency of traditional mixers. The present invention uses the nonlinear response characteristics generated by the nonlinear Hall effect of tantalum nickel telluride to achieve mixing. Specifically, when two alternating current signals of different frequencies pass through a material with a nonlinear Hall effect at the same time, the nonlinear response of the material will cause the sum frequency, difference frequency and other mixed components of these frequencies to appear in the output signal. The heterodyne mixer provided by the present invention can achieve fundamental mixing within a broadband frequency range for radio frequency signals and local oscillator signals, and has the ability of high-order harmonic mixing. It can also be used for high-order frequency multiplication of low-frequency signals (i.e., weak signals), providing new exploration ideas for the development of mixing devices, frequency multiplication devices and electronic devices for wireless communications.

[0024] The data of the embodiments show that the high-frequency terahertz heterodyne mixer provided by the present invention can realize fundamental wave mixing in the broadband frequency range of 4 to 106 GHz and 322 to 344 GHz, can realize up to tenth harmonic mixing for the radio frequency of 90 GHz, and can realize 26th harmonic frequency doubling for the low-frequency signal of 1 GHz. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] Figure 1 A schematic cross-sectional structure diagram of a high-frequency terahertz heterodyne mixer provided by the present invention;

[0026] Figure 2 A schematic diagram of the top view of the high-frequency terahertz heterodyne mixer provided by the present invention;

[0027] Figure 3 A diagram of a test system device for performing heterodyne mixing performance testing on the high-frequency terahertz heterodyne mixer provided in Example 1;

[0028] Figure 4 A low-frequency fundamental mixing diagram of the high-frequency terahertz heterodyne mixer provided in Example 1;

[0029] Figure 5 A high-frequency fundamental mixing diagram of the high-frequency terahertz heterodyne mixer provided in Example 1;

[0030] Figure 6 A high-order harmonic mixing diagram of the high-frequency terahertz heterodyne mixer provided in Example 1;

[0031] Figure 7 A harmonic frequency diagram of the high-frequency terahertz heterodyne mixer provided in Example 1;

[0032] Figure numerals: 1-intrinsic high-resistance silicon layer, 2-silicon dioxide layer, 3-terminal metal electrode layer, 4-tantalum nickel telluride layer, 5-dielectric protection layer. DETAILED DESCRIPTION

[0033] In the present invention, the tantalum nickel telluride mechanically peeled off from the single crystal tantalum nickel telluride is generally rectangular, so the cross-sectional shape of the tantalum nickel telluride layer is also rectangular, and the short side of the tantalum nickel telluride layer is called the horizontal side, and the long side is called the longitudinal side.

[0034] The present invention provides a high-frequency terahertz heterodyne mixer, comprising a substrate layer, an absorption layer and a dielectric protection layer, wherein the substrate layer and the absorption layer are stacked;

[0035] The base layer includes an intrinsic high-resistance silicon layer and a silicon dioxide layer stacked in layers, and the silicon dioxide layer is in contact with the absorption layer;

[0036] The absorption layer includes dispersed terminal metal electrode layers and tantalum-nickel-telluride layers; the number of the terminal metal electrode layers is 4, and the 4 terminal metal electrode layers are symmetrically distributed in the transverse and longitudinal directions of the tantalum-nickel-telluride layers, and the tantalum-nickel-telluride layers are located at the center of the region formed by the 4 terminal metal electrode layers, and the tantalum-nickel-telluride layers are in contact with the 4 terminal metal electrode layers;

[0037] The dielectric protection layer wraps the tantalum-nickel-telluride layer.

[0038] In the present invention, unless otherwise specified, the raw materials used are preferably commercially available products.

[0039] The high-frequency terahertz heterodyne mixer provided by the present invention includes a base layer, and the base layer includes an intrinsic high-resistance silicon layer and a silicon dioxide layer stacked, and the silicon dioxide layer is in contact with the absorption layer. In the present invention, the resistivity of the intrinsic high-resistance silicon layer is preferably 20000-25000Ω·cm, and further preferably 20000Ω·cm; the thickness is preferably 300-400μm, and specifically preferably 300μm, 310μm, 320μm, 330μm, 340μm, 350μm, 360μm, 370μm, 380μm, 390μm or 400μm. In the present invention, the thickness of the silicon dioxide layer is preferably 300-400nm, and specifically preferably 300nm, 310nm, 320nm, 330nm, 340nm, 350nm, 360nm, 370nm, 380nm, 390nm or 400nm. In a specific embodiment of the present invention, the cross-sectional shape of the substrate layer is preferably circular, and the size of the circle is preferably 4 inches. In a specific implementation of the present invention, the substrate layer is preferably a commercially available high-resistance silicon dioxide wafer, more preferably a high-resistance silicon dioxide wafer purchased from Shanghai Anwei Technology Co., Ltd.

[0040] The high-frequency terahertz heterodyne mixer provided by the present invention comprises an absorption layer stacked on the substrate layer, the absorption layer comprises a dispersed terminal metal electrode layer and a tantalum nickel telluride layer; the number of the terminal metal electrode layers is 4, the 4 terminal metal electrode layers are symmetrically distributed in the transverse and longitudinal directions of the tantalum nickel telluride layer, the tantalum nickel telluride layer is located at the center of the area formed by the 4 terminal metal electrode layers, and the tantalum nickel telluride layer is connected to the 4 terminal metal electrode layers. In the present invention, the terminal metal electrode layer preferably comprises a stacked chromium layer and a gold layer, and the chromium layer is preferably in contact with the silicon dioxide layer. In the present invention, the thickness of the chromium layer is preferably 10 to 15 nm, and the thickness of the gold layer is preferably 20 to 30 nm, and specifically preferably 20 nm, 25 nm or 30 nm. In the present invention, the cross-sectional shape of the terminal metal electrode layer is preferably a "convex" type, and the "convex" type includes a head and a handle. The cross-sectional shape of the head is preferably a rectangle, and the size of the rectangle is preferably 150-250μm×150-250μm, and more preferably 200μm×200μm; the cross-sectional shape of the handle preferably includes a large strip and a small strip, and the large strip is in contact with the head. The size of the large strip is preferably 200-400μm×20-30μm, and more preferably 250μm×20μm, and the size of the small strip is preferably 20-40μm×4-8μm, and more preferably 30μm×5μm. In the present invention, the handle of the terminal metal electrode layer is preferably facing the tantalum nickel telluride layer and in contact with the tantalum nickel telluride layer. In the present invention, the small strip of the terminal metal electrode layer contacts the tantalum niobium tellurium layer, and the cross-sectional size of the contact is preferably 2-8 μm×4-8 μm, and more preferably 2 μm×5 μm.

[0041] In the present invention, the thickness of the tantalum nickel telluride layer is preferably 40 to 100 nm, and more preferably 40 nm, 50 nm, 60 nm, 70 nm, 80 nm, 90 nm or 100 nm. In the present invention, the cross-sectional shape of the tantalum nickel telluride layer is preferably a rectangle, and the size of the rectangle is preferably ≥10 μm×20 μm, and more preferably 10 μm×20 μm.

[0042] The high-frequency terahertz heterodyne mixer provided by the present invention comprises a dielectric protection layer, and the dielectric protection layer wraps the tantalum nickel telluride layer. In the present invention, the material of the dielectric protection layer is preferably boron nitride, and the thickness of the dielectric protection layer is preferably 20 to 50 nm, and specifically preferably 20 nm, 30 nm, 40 nm or 50 nm. In the present invention, the dielectric protection layer can protect the tantalum nickel telluride layer from being oxidized.

[0043] The high-frequency terahertz heterodyne mixer provided by the present invention preferably further comprises a PCB base, and the intrinsic high-resistance silicon layer in the high-frequency terahertz heterodyne mixer preferably contacts the PCB base. In the present invention, the PCB base preferably has an SMA interface output.

[0044] The present invention also provides a method for preparing the high-frequency terahertz heterodyne mixer described in the above technical solution, comprising the following steps:

[0045] (1) using ultraviolet photolithography to photolithograph the base layer to obtain a structure of four terminal metal electrode layers, and then using electron beam evaporation to prepare the four terminal metal electrode layers;

[0046] (2) mechanically exfoliating the single crystal tantalum nickel telluride to obtain a tantalum nickel telluride thin sheet, and transferring the tantalum nickel telluride thin sheet to the surface of the substrate layer to form a tantalum nickel telluride layer;

[0047] (3) Wrapping the tantalum nickel telluride layer with a dielectric protective layer to obtain the high-frequency terahertz heterodyne mixer.

[0048] The present invention uses ultraviolet photolithography to photolithograph the base layer to obtain a four-terminal metal electrode layer structure, and then uses electron beam evaporation to prepare the four-terminal metal electrode layers;

[0049] The present invention does not specifically limit the parameters of the photolithography, and operations familiar to those skilled in the art can be used. The present invention does not specifically limit the parameters of the electron beam evaporation method.

[0050] After preparing four terminal metal electrode layers, the present invention mechanically peels off the single crystal tantalum nickel telluride to obtain a tantalum nickel telluride thin sheet, and transfers the tantalum nickel telluride thin sheet to the surface of the substrate layer to form a tantalum nickel telluride layer.

[0051] In the present invention, the tool for mechanical stripping is preferably a blue tape. In the present invention, the thickness of the tantalum nickel tellurium thin sheet is preferably 40 to 100 nm. In the present invention, the cross-sectional shape of the tantalum nickel tellurium thin sheet is preferably a rectangle. In the present invention, the tantalum nickel tellurium thin sheet is preferably transparent; the tantalum nickel tellurium thin sheet is preferably screened by a microscope.

[0052] After forming the tantalum nickel telluride layer, the present invention wraps the tantalum nickel telluride layer with a dielectric protective layer to obtain the high-frequency terahertz heterodyne mixer. In the present invention, when the material of the dielectric protective layer is preferably boron nitride, the process of wrapping the tantalum nickel telluride layer with a dielectric protective layer preferably includes the following steps: mechanically exfoliating the single crystal boron nitride to obtain a thin layer of boron nitride, and transferring the thin layer of boron nitride to the tantalum nickel telluride layer to form a dielectric protective layer. In the present invention, the tool for mechanical exfoliation is preferably a blue tape. In the present invention, the thickness of the thin layer of boron nitride is preferably 20 to 50 nm. In the present invention, the thin layer of boron nitride is preferably transparent; the thin layer of boron nitride is preferably screened by a microscope.

[0053] The present invention also provides the application of the high-frequency terahertz heterodyne mixer described in the above technical solution or the high-frequency terahertz heterodyne mixer prepared by the preparation method described in the above technical solution in AC electromagnetic wave mixing.

[0054] The present invention does not specifically limit the application mode of the high-frequency terahertz heterodyne mixer, and those skilled in the art may configure it according to actual needs.

[0055] The high-frequency terahertz heterodyne mixer provided by the present invention and its preparation method and application are described in detail below in conjunction with the embodiments, but they should not be understood as limiting the protection scope of the present invention.

[0056] Example 1

[0057] according to Figure 1 and Figure 2 A high-frequency terahertz heterodyne mixer is provided, wherein the cross-sectional shape of the base layer is a four-inch (wafer) circle, the resistivity of the intrinsic high-resistance silicon layer stacked in the base layer is 20000Ω·cm, the thickness is 400μm, and the thickness of the silicon dioxide layer is 400nm; in the end metal electrode layer, the thickness of the chromium layer is 10nm, the thickness of the gold layer is 20nm, the cross-sectional shape of the end metal electrode layer is "convex", the size of the "convex" head is 200μm×200μm, the size of the large strip in the handle is 250μm×20μm, and the size of the small strip is 5μm×30μm; the thickness of the tantalum nickel telluride layer is 70nm, and the size of the cross-sectional shape is 10μm×20μm; the material of the dielectric protection layer is boron nitride, and the thickness is 30nm; the cross-sectional size of the overlapping part of the small strip in the handle and the tantalum nickel telluride layer is 5μm×2μm.

[0058] The specific preparation method is as follows: the base layer is photolithographically processed by ultraviolet photolithography to obtain four end metal electrode layer structures, and then the four end metal electrode layers are prepared by electron beam evaporation; the single crystal tantalum nickel telluride is mechanically stripped to obtain tantalum nickel telluride thin sheets, and the tantalum nickel telluride thin sheets are transferred to the surface of the base layer to form a tantalum nickel telluride layer; the single crystal boron nitride is mechanically stripped to obtain a thin layer of boron nitride, and the thin layer of boron nitride is transferred to the tantalum nickel telluride layer to form a dielectric protective layer.

[0059] The heterodyne mixing performance of the high-frequency terahertz heterodyne mixer of Example 1 is tested. The test system device is as follows: Figure 3As shown, the test principle is: first, the 0.02-0.355THz electromagnetic wave (called the local oscillator signal) generated by the microwave source and the terahertz frequency multiplier, and the 0.02-0.355THz electromagnetic wave (called the radio frequency signal) generated by the adjustable microwave / terahertz signal source are respectively vertically irradiated to the front and back surfaces of the device under test (i.e., the high-frequency terahertz heterodyne mixer provided in Example 1). The device under test can receive these two alternating electromagnetic wave signals and generate a mixed signal. The mixed signal output is amplified by a low-noise amplifier and input into the spectrum analyzer, which collects and records the signal. The detailed steps are:

[0060] a) According to Figure 3 The test system device diagram shown in the figure is as follows: a) connect the test system and adjust the system settings to ensure that the system and the device are in normal working condition; b) adjust the terahertz frequency multiplier and the adjustable microwave / terahertz signal source, wherein the electromagnetic wave output by the terahertz frequency multiplier is used as the local oscillator signal, and the electromagnetic wave output by the adjustable microwave / terahertz signal source is used as the radio frequency signal, and the test position of the device under test is fixed so that the device under test is placed in the front and back vertical radiation position of the source; d) set the output power and frequency of the local oscillator signal and the radio frequency signal required for the test through the software, and control the output of the local oscillator signal and the radio frequency signal. After the device under test receives the output radio frequency signal and local oscillator signal, the intermediate frequency signal generated is amplified by the low noise amplifier and input into the spectrum analyzer; e) adjust the spectrum analyzer so that it displays the frequency corresponding to the intermediate frequency signal, and record the power output of the intermediate frequency signal as P IF , since the gain of the low noise amplifier is A TIA , the effective light receiving area (limited diffraction area) of the device is S opt , the power of the RF signal output is P RF , the RF signal output area of ​​the RF source is S RF , calculate the conversion loss of the device under test according to formula 1:

[0061]

[0062] The results are as follows Figures 4 to 7 shown.

[0063] Figure 4 A low-frequency fundamental mixing diagram of a high-frequency terahertz heterodyne mixer provided in Example 1, wherein the illustration is a test configuration diagram. Figure 4 It can be seen that the high-frequency terahertz heterodyne mixer of Example 1 can achieve fundamental wave mixing in a broadband frequency range of 4 to 106 GHz.

[0064] Figure 5 The high-frequency fundamental mixing diagram of the high-frequency terahertz heterodyne mixer provided in Example 1 is shown in FIG. Figure 5It can be seen that the high-frequency terahertz heterodyne mixer of Example 1 can achieve fundamental wave mixing in a broadband frequency range of 322 to 344 GHz, and maintain a relatively low frequency conversion loss within this frequency range.

[0065] Figure 6 The high-order harmonic mixing diagram of the high-frequency terahertz heterodyne mixer provided in Example 1 is shown in FIG. Figure 6 It can be seen that the high-frequency terahertz heterodyne mixer of Example 1 can achieve up to tenth harmonic mixing for a radio frequency of 90 GHz.

[0066] Figure 7 The harmonic frequency diagram of the high-frequency terahertz heterodyne mixer provided in Example 1, wherein the illustration is a test configuration diagram, from Figure 7 It can be seen that the high-frequency terahertz heterodyne mixer provided in Example 1 can achieve 26th harmonic frequency multiplication for a low-frequency signal of 1 GHz (multiplying a 1 GHz signal to 26 GHz).

[0067] The above is only a preferred embodiment of the present invention. It should be pointed out that for ordinary technicians in this technical field, several improvements and modifications can be made without departing from the principle of the present invention. These improvements and modifications should also be regarded as the scope of protection of the present invention.

Claims

1. A high-frequency terahertz heterodyne mixer, comprising a substrate layer, an absorption layer and a dielectric protection layer; the substrate layer and the absorption layer are stacked; The base layer includes an intrinsic high-resistance silicon layer and a silicon dioxide layer stacked in layers, and the silicon dioxide layer is in contact with the absorption layer; The absorption layer includes dispersed terminal metal electrode layers and tantalum-nickel-telluride layers; the number of the terminal metal electrode layers is 4, and the 4 terminal metal electrode layers are symmetrically distributed in the transverse and longitudinal directions of the tantalum-nickel-telluride layers, and the tantalum-nickel-telluride layers are located at the center of the region formed by the 4 terminal metal electrode layers, and the tantalum-nickel-telluride layers are in contact with the 4 terminal metal electrode layers; The dielectric protection layer wraps the tantalum-nickel-telluride layer.

2. The high-frequency terahertz heterodyne mixer according to claim 1, characterized in that: The resistivity of the intrinsic high-resistance silicon layer is 20000-25000Ω·cm, and the thickness is 300-400μm.

3. The high-frequency terahertz heterodyne mixer according to claim 1, characterized in that: The thickness of the silicon dioxide layer is 300-400 nm.

4. The high-frequency terahertz heterodyne mixer according to claim 1, characterized in that: The terminal metal electrode layer includes a chromium layer and a gold layer which are stacked, and the chromium layer is in contact with the silicon dioxide layer.

5. The high-frequency terahertz heterodyne mixer according to claim 4, characterized in that: The thickness of the chromium layer is 10-15 nm, and the thickness of the gold layer is 20-30 nm.

6. The high-frequency terahertz heterodyne mixer according to claim 1, characterized in that: The thickness of the tantalum-nickel-tellurium layer is 40-100 nm.

7. The high-frequency terahertz heterodyne mixer according to claim 1, characterized in that: The material of the dielectric protection layer is boron nitride, and the thickness of the dielectric protection layer is 20-50 nm.

8. The high-frequency terahertz heterodyne mixer according to claim 1, characterized in that: The high-frequency terahertz heterodyne mixer further includes a PCB base, and the intrinsic high-resistance silicon layer in the high-frequency terahertz heterodyne mixer is in contact with the PCB base; The PCB base is an SMA interface output.

9. The method for preparing a high-frequency terahertz heterodyne mixer according to any one of claims 1 to 8, characterized in that: The following steps are involved: (1) using ultraviolet photolithography to photolithograph the base layer to obtain a structure of four terminal metal electrode layers, and then using electron beam evaporation to prepare the four terminal metal electrode layers; (2) mechanically exfoliating the single crystal tantalum nickel telluride to obtain a tantalum nickel telluride thin sheet, and transferring the tantalum nickel telluride thin sheet to the surface of the substrate layer to form a tantalum nickel telluride layer; (3) Wrapping the tantalum nickel telluride layer with a dielectric protective layer to obtain the high-frequency terahertz heterodyne mixer.

10. Use of the high-frequency terahertz heterodyne mixer according to any one of claims 1 to 8 or the high-frequency terahertz heterodyne mixer prepared by the preparation method according to claim 9 in mixing alternating current electromagnetic waves.

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