An insulated sealed beam adjustable target electrode structure for material ion irradiation

Abstract

The application relates to the technical field of ion irradiation devices, in particular to an insulating sealed beam spot adjustable target electrode structure for material ion irradiation. The technical scheme comprises a cylindrical electrode, the bottom of the cylindrical electrode is threadedly connected with an insulating support base, and a cooling mechanism is arranged between the cylindrical electrode and the insulating support base; a target is arranged in the cylindrical electrode, a height adjusting mechanism is arranged between the insulating support base and the target; and a spiral water cooling hose is connected between the target and the cooling mechanism. Through adjustable ion energy and beam spot size, the device can adapt to the irradiation requirements of different materials, provides a good technical basis for the target electrode structure design of the ion irradiation device, removes the heat generated by ion sputtering bombardment, prevents the electrode from being deformed and damaged due to temperature rise, and guarantees the continuity and stability of the ion irradiation process.

Description

Technical Field

[0001] This invention relates to the field of ion irradiation device technology, and more particularly to an insulating, sealed, beam-adjustable target electrode structure for ion irradiation of materials. Background Technology

[0002] Ion irradiation is an important materials modification technique that alters the physical, chemical, structural, and mechanical properties of materials by introducing high-energy ion beams into the surface or interior of the material. This process involves the interaction between ions and the material, resulting in microscopic effects such as atomic substitution, lattice distortion, point defect generation, surface etching, and doping. This technology has wide applications in semiconductor manufacturing, materials science, the nuclear industry, and biomedicine. For example, in semiconductor manufacturing, ion implantation is commonly used to precisely incorporate ions (such as boron, phosphorus, and arsenic) into silicon wafers to control their conductivity. In materials science, such as in the aerospace and automotive industries, ion irradiation can introduce surface compressive stress, improving the surface hardness and wear resistance of turbine blades and engine components. In the nuclear industry, ion irradiation is used to simulate radiation environments to study the performance and lifespan of nuclear materials under high radiation fields, to investigate the irradiation damage and durability of nuclear fuels and cladding materials (such as zirconium alloys and ceramic fuels) under extreme conditions, or to screen materials for fusion reactors that can withstand extremely high heat flux and neutron irradiation through high-energy ion beam irradiation tests. With the development of ion irradiation technology, the demand and requirements for irradiation technology are also increasing.

[0003] However, the operation of irradiation equipment places high demands on the target electrode structure: 1. When extracting high-energy ion beams, the electrodes are susceptible to ion sputtering bombardment, leading to temperature rise, deformation, and damage, requiring additional water cooling protection. 2. Ion irradiation is always conducted in a vacuum environment. 3. The extraction electrode and the target are at a high voltage potential, necessitating insulation protection. Furthermore, during ion irradiation, the beam spot area directly affects the size and uniformity of the material modification region, thus determining the modification effect and product performance. However, traditional ion irradiation systems typically rely on fixed optical systems (such as electromagnetic lenses and apertures) to control the beam spot size, a method with limited flexibility and precision.

[0004] Therefore, this application proposes an insulated, sealed, beam-spot-tunable target electrode structure for material ion irradiation. Summary of the Invention

[0005] The purpose of this invention is to address the problem in the prior art where, during the operation of irradiation equipment, the target electrode structure is susceptible to ion sputtering bombardment, leading to temperature rise, deformation, and damage. This invention proposes an insulated, sealed, beam-adjustable target electrode structure for material ion irradiation.

[0006] The technical solution of the present invention: an insulating, sealed, beam-spot-tunable target electrode structure for material ion irradiation, comprising:

[0007] A cylindrical electrode, the bottom of which is threadedly connected to an insulating support base, and a cooling mechanism is provided between the cylindrical electrode and the insulating support base;

[0008] A target is disposed inside the cylindrical electrode, and a height adjustment mechanism is provided between the insulating support base and the target;

[0009] A spiral water-cooled hose connects the target and the cooling mechanism.

[0010] Optionally, the cooling mechanism includes an electrode interlayer water-cooling channel formed on the cylindrical electrode, and a base water inlet and a base water outlet are respectively formed on both sides of the insulating support base, and the electrode interlayer water-cooling channel is connected to the base water inlet and the base water outlet.

[0011] Optionally, there are two spiral water-cooled hoses, and the bottoms of the two spiral water-cooled hoses are respectively connected to the water inlet and water outlet of the base.

[0012] Optionally, the inner diameter of the spiral water-cooling hose is 10mm, the outer diameter of the spiral water-cooling hose is 12mm, and the spiral water-cooling hose is an elastic hose.

[0013] Optionally, the height adjustment mechanism is a height-adjustable custom lead screw, which is assembled from an upper part of the lead screw, a lower part of the lead screw, and an annular nut. The lower part of the lead screw has a nut rotation groove, and the annular nut is rotatably sleeved on the nut rotation groove of the lower part of the lead screw. The upper end of the annular nut has a threaded hole that matches the upper part of the lead screw. The upper part of the lead screw is threadedly connected to the inner wall of the threaded hole. The top of the upper part of the lead screw is fixedly connected to a target, and the bottom of the lower part of the lead screw is fixedly connected to an insulating support base.

[0014] Optionally, the bottom of the cylindrical electrode is provided with fine thread, and the insulating support base is provided with thread adapted to the fine thread.

[0015] Optionally, the target is a cylindrical metal target with a diameter of 111 mm and a thickness of 15 mm.

[0016] Optionally, the insulating support base is made of polytetrafluoroethylene or PEEK material.

[0017] Optionally, the outermost ring of the insulating support base is provided with an O-ring sealing groove.

[0018] Compared with the prior art, this application includes at least one of the following beneficial technical effects:

[0019] This invention, while ensuring the overall vacuum and insulation of the device, designs a target electrode structure with an adjustable beam spot for ion irradiation of materials. By adjusting the ion energy and beam spot size, the device can adapt to the irradiation requirements of different materials, providing a good technical basis for the design of target electrode structures for ion irradiation devices.

[0020] The water-cooling channel in the electrode interlayer, combined with the water inlet and outlet of the base, forms a highly efficient water-cooling system for the cylindrical electrode. This system promptly removes the heat generated by ion sputtering bombardment, preventing the electrode from heating up, deforming, or being damaged, and ensuring the continuity and stability of the ion irradiation process.

[0021] This invention, through adjustable ion energy and beam size, enables the device to adapt to the irradiation requirements of different materials, providing a sound technical basis for the target electrode structure design of ion irradiation devices. It also removes the heat generated by ion sputtering bombardment, preventing electrode deformation and damage due to temperature rise, and ensuring the continuity and stability of the ion irradiation process. Attached Figure Description

[0022] Figure 1 This is a schematic diagram of an insulated, sealed, beam-spot-tunable target electrode structure for ion irradiation of materials.

[0023] Figure 2 This is a schematic diagram of the cylindrical electrode structure;

[0024] Figure 3 A structural diagram of a height-adjustable lead screw.

[0025] Reference numerals: 1. Cylindrical electrode; 2. Electrode jacket water-cooling channel; 3. Target; 4. Height-adjustable custom lead screw; 5. Spiral water-cooling hose; 6. Insulated support base; 7. Base inlet; 8. Base outlet; 9. Fine thread; 101. Electrode outer wall; 102. Electrode inner wall; 401. Upper part of lead screw; 402. Ring nut; 403. Nut rotation groove; 404. Lower part of lead screw. Detailed Implementation

[0026] The technical solution of the present invention will now be clearly and completely described with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments.

[0027] The components of the embodiments of the invention described and shown in the accompanying drawings can typically be arranged and designed in a variety of different configurations. Therefore, the following detailed description of the embodiments of the invention provided in the drawings is not intended to limit the scope of the claimed invention, but merely to illustrate selected embodiments of the invention.

[0028] Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0029] In the description of this invention, it should be noted that the terms "center," "upper," "lower," "left," "right," "vertical," "horizontal," "inner," and "outer," etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are used only for the convenience of describing the invention and for simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on the invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and should not be construed as indicating or implying relative importance.

[0030] It should be noted that the terms "comprising," "including," or any other variations thereof are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. In this specification, illustrative expressions of the above terms do not necessarily refer to the same embodiments or examples. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples.

[0031] In the description of this invention, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "linking" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this invention based on the specific circumstances.

[0032] Example

[0033] like Figures 1-2 As shown, the present invention proposes an insulated, sealed, adjustable beam spot target electrode structure for material ion irradiation, comprising a cylindrical electrode 1, an insulating support base 6 threadedly connected to the bottom of the cylindrical electrode 1, a fine thread 9 provided at the bottom of the cylindrical electrode 1, and a thread adapted to the fine thread 9 on the insulating support base 6, thereby realizing the connection between the cylindrical electrode 1 and the insulating support base 6, and the height of the cylindrical electrode 1 can be adjusted to the required height by rotation.

[0034] A target 3 is disposed inside the cylindrical electrode 1. The target 3 is a cylindrical metal target with a diameter of 111 mm and a thickness of 15 mm. A height adjustment mechanism is provided between the insulating support base 6 and the target 3. The beam spot size is controlled by adjusting the height of the cylindrical electrode 1 and the target 3 together. The height adjustment mechanism is a height-adjustable custom lead screw 4, which is assembled from an upper part 401, a lower part 404, and an annular nut 402. The lower part 404 has a nut rotation groove 403. The annular nut 402 is rotatably sleeved on the nut rotation groove 403 of the lower part 404. The upper end of the annular nut 402 has a threaded hole that matches the upper part 401. The upper part 401 is threadedly connected to the inner wall of the threaded hole. The target 3 is fixedly connected to the top of the upper part 401, and the bottom of the lower part 404 is fixedly connected to the insulating support base 6. By simultaneously and slowly rotating the ring nut 402, the upper part 401 of the lead screw is driven to adjust the height, thereby achieving the purpose of adjusting the height of the target 3.

[0035] It is worth noting that a cooling mechanism is provided between the cylindrical electrode 1 and the insulating support base 6. The cooling mechanism includes an electrode interlayer water-cooling channel 2 formed on the cylindrical electrode 1. The cylindrical electrode 1 is formed by welding the outer wall 101 and the inner wall 102 of the electrode together, thereby forming the electrode interlayer water-cooling channel 2. The insulating support base 6 has a base water inlet 7 and a base water outlet 8 on both sides, and the electrode interlayer water-cooling channel 2 is connected to the base water inlet 7 and the base water outlet 8.

[0036] In this embodiment, a spiral water-cooled hose 5 connects the target 3 to the cooling mechanism. The inner diameter of the spiral water-cooled hose 5 is 10 mm, the outer diameter is 12 mm, and the spiral water-cooled hose 5 is an elastic hose. There are two spiral water-cooled hoses 5, and the bottoms of the two spiral water-cooled hoses 5 are respectively connected to the base inlet 7 and the base outlet 8. The spiral water-cooled hose 5 provides coolant circulation for the target 3. The coolant can be fluorinated liquid or deionized water, or other insulating coolants.

[0037] The insulating support base 6 is made of polytetrafluoroethylene or PEEK material, and the outermost ring of the insulating support base 6 is provided with an O-ring sealing groove to ensure the vacuum seal of the overall structure.

[0038] The coolant enters through the base inlet 7, is diverted to the target 3 and the electrode interlayer water cooling channel 2, carries away the heat from the cylindrical electrode 1 and the target 3, flows through the spiral water cooling hose 5, and then flows back to the base outlet 8, and finally flows back to the water chiller for heat exchange.

[0039] The above specific embodiments are merely several optional embodiments of the present invention. Based on the technical solutions of the present invention and the relevant teachings of the above embodiments, those skilled in the art can make various alternative improvements and combinations to the above specific embodiments.

Claims

1. An insulating, sealed, beam-spot-tunable target electrode structure for material ion irradiation, characterized in that, include: A cylindrical electrode (1) is provided with an insulating support base (6) threaded to its bottom, and a cooling mechanism is provided between the cylindrical electrode (1) and the insulating support base (6). A target (3) is provided inside the cylindrical electrode (1), and a height adjustment mechanism is provided between the insulating support base (6) and the target (3); A spiral water-cooled hose (5) is connected between the target (3) and the cooling mechanism. The cooling mechanism includes an electrode interlayer water cooling channel (2) opened on the cylindrical electrode (1), and a base water inlet (7) and a base water outlet (8) are respectively opened on both sides of the insulating support base (6). The electrode interlayer water cooling channel (2) is connected to the base water inlet (7) and the base water outlet (8). There are two spiral water-cooled hoses (5), and the bottoms of the two spiral water-cooled hoses (5) are connected to the base inlet (7) and the base outlet (8) respectively. The height adjustment mechanism is a height-adjustable custom lead screw (4). The height-adjustable custom lead screw (4) is assembled from the upper part (401), the lower part (404) and the ring nut (402). The lower part (404) of the lead screw has a nut rotation groove (403). The ring nut (402) is rotated and sleeved on the nut rotation groove (403) of the lower part (404) of the lead screw. The upper end of the ring nut (402) has a threaded hole that matches the upper part (401) of the lead screw. The upper part (401) of the lead screw is threadedly connected to the inner wall of the threaded hole. The top target (3) of the upper part (401) of the lead screw is fixedly connected. The bottom of the lower part (404) of the lead screw is fixedly connected to the insulating support base (6).

2. The insulating, sealed, beam-spot-tunable target electrode structure for material ion irradiation according to claim 1, characterized in that, The inner diameter of the spiral water-cooled hose (5) is 10mm, the outer diameter of the spiral water-cooled hose (5) is 12mm, and the spiral water-cooled hose (5) is an elastic hose.

3. The insulating, sealed, beam-spot-tunable target electrode structure for material ion irradiation according to claim 1, characterized in that, The bottom of the cylindrical electrode (1) is provided with a fine thread (9), and the insulating support base (6) is provided with a thread that is compatible with the fine thread (9).

4. The insulating, sealed, beam-spot-tunable target electrode structure for material ion irradiation according to claim 1, characterized in that, The target (3) is a cylindrical metal target with a diameter of 111 mm and a thickness of 15 mm.

5. The insulating, sealed, beam-spot-tunable target electrode structure for material ion irradiation according to claim 1, characterized in that, The insulating support base (6) is made of polytetrafluoroethylene or PEEK material.

6. The insulating, sealed, beam-spot-tunable target electrode structure for material ion irradiation according to claim 1, characterized in that, The outermost ring of the insulating support base (6) is provided with an O-ring sealing groove.

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