Hole opening method of zinc sulfide / cadmium telluride composite passivation film and mercury cadmium telluride device

Abstract

The invention relates to the technical field of semiconductor material processing and preparation, in particular to a trepanning method of a zinc sulfide / cadmium telluride composite passive film and a mercury cadmium telluride device, and the method comprises the following steps: S1, manufacturing a photoresist trepanning pattern on the surface of the zinc sulfide / cadmium telluride composite passive film of the device; s2, carrying out corrosion trepanning on the zinc sulfide passivation film; s3, the side wall of the hole of the zinc sulfide passivation film is covered with a protection layer; s4, performing corrosion trepanning on the cadmium telluride passivation film; and S5, removing the protective layer and the photoresist opening pattern. According to the invention, after the hole is formed in the zinc sulfide passive film and before the hole is formed in the cadmium telluride passive film, the side wall of the hole formed in the zinc sulfide passive film is covered with the protective layer, so that the hole formed in the zinc sulfide passive film is effectively prevented from being corroded during subsequent hole corrosion of the cadmium telluride passive film; and the uniformity and the accuracy of the hole diameter of the zinc sulfide / cadmium telluride composite passivation film are obviously improved.

Description

Technical Field

[0001] The invention relates to the technical field of semiconductor material processing and preparation, and in particular to a method for opening a hole in a zinc sulfide / cadmium telluride composite passivation film and a mercury cadmium telluride device. Background Art

[0002] At present, HgCdTe infrared detectors are still one of the most excellent infrared detectors, and ZnS / CdTe composite passivation film is one of the most excellent tellurization methods for HgCdTe devices. By opening a hole in the CdTe / ZnS composite passivation film of the HgCdTe device to expose the HgCdTe epitaxial material and growing a metal electrode, the photoelectric signal of the HgCdTe device can be derived.

[0003] There are two reported methods for opening holes in the zinc sulfide / cadmium telluride composite passivation film of mercury cadmium telluride devices: pure wet etching and dry etching + wet etching composite hole opening. Dry etching generally uses ICP (inductively coupled plasma) etching or IBE (ion beam) etching to open holes. Wet reagents generally use acidic etchants to complete the epitaxial etching of cadmium telluride passivation films and a small amount of mercury cadmium telluride.

[0004] The corrosion reagent used in pure wet etching openings must be able to corrode zinc sulfide, cadmium telluride, and mercury cadmium telluride at the same time. Generally, the corrosion rates of zinc sulfide, cadmium telluride, and mercury cadmium telluride are slightly different. In order to ensure that the passivation film can be completely corroded, the mercury cadmium telluride epitaxial material is generally over-corroded to a certain extent. At the same time, due to the poor selective corrosion rate of the wet etchant, the surface zinc sulfide passivation film opening will cause the aperture to expand and corrode. After the corrosion is completed, the aperture of the zinc sulfide passivation layer will be larger. In addition, the uniformity of wet etching is poor. There are problems such as poor uniformity of the aperture of the cadmium telluride / zinc sulfide passivation film openings and different depths of the passivation film openings, which is not conducive to the production of mercury cadmium telluride metal electrodes and the export of photoelectric signals.

[0005] In the dry etching + wet etching composite hole opening method, the zinc sulfide hole is generally opened by dry etching process first, and then the partial cadmium telluride passivation film is dry-etched, and then the remaining cadmium telluride and part of the mercury cadmium telluride epitaxy are etched away with wet etching solution. Dry etching will cause certain damage to the mercury cadmium telluride epitaxial material, which will increase the surface leakage of the mercury cadmium telluride device and affect the performance of the mercury cadmium telluride device. Summary of the invention

[0006] The object of the present invention is to provide a method for opening a hole in a zinc sulfide / cadmium telluride composite passivation film and a mercury cadmium telluride device, which can improve the uniformity and accuracy of the opening of the zinc sulfide / cadmium telluride composite passivation film.

[0007] To achieve the above object, the technical solution of the present invention is a method for opening a hole in a zinc sulfide / cadmium telluride composite passivation film, comprising the following steps:

[0008] S1. Making a photoresist opening pattern on the surface of the zinc sulfide / cadmium telluride composite passivation film of the device;

[0009] S2, corroding and opening the zinc sulfide passivation film;

[0010] S3, covering the side walls of the openings of the zinc sulfide passivation film with a protective layer;

[0011] S4, corroding and opening holes in the cadmium telluride passivation film;

[0012] S5, removing the protective layer and the photoresist opening pattern.

[0013] As one of the implementation modes, in step S4, a first etching solution is used to corrode and open holes in the cadmium telluride passivation film, and the corrosion rate ratio of the first etching solution to the cadmium telluride passivation film and the zinc sulfide passivation film is (5-8):1.

[0014] As one of the embodiments, the first etching solution is made of the following components: 250-300 ml of deionized water, 10-16 g of component A, 12-17 ml of concentrated nitric acid, and 12-17 ml of component B; the component A is chromium trioxide or potassium dichromate, and the component B is any one of hydrofluoric acid, citric acid, and phosphoric acid.

[0015] As one of the implementation methods, the specific steps of etching and opening holes in the cadmium telluride passivation film in step S4 are: placing the device in the first etching solution for etching for 6-15 seconds, and then quickly flushing with water for more than 1 minute.

[0016] As one of the implementation modes, the specific steps of covering the side walls of the zinc sulfide passivation film opening with a protective layer in step S3 are: coating a positive resist on the device surface and baking the resist, exposing and developing the positive resist on the front side of the device and the bottom of the zinc sulfide passivation film opening to be removed, and retaining the positive resist on the side walls of the zinc sulfide passivation film opening to form the protective layer.

[0017] As one of the embodiments, the baking temperature is 85°C to 95°C for 5 to 10 minutes; the exposure adopts full-surface exposure, and the exposure power is 10-20W / cm 2 , exposure time is 25-45 seconds.

[0018] As one of the implementation methods, the specific steps of making the photoresist opening pattern in step S1 are: coating photoresist on the surface of the zinc sulfide / cadmium telluride composite passivation film of the device, and performing photolithography and development to expose the zinc sulfide / cadmium telluride composite passivation film in the area to be opened, and covering the zinc sulfide / cadmium telluride composite passivation film in the remaining area with the photoresist.

[0019] As one of the implementation modes, the specific steps of removing the protective layer and the photoresist opening pattern are: soaking the device in an acetone solution for 3 to 10 minutes.

[0020] As one of the implementation modes, the specific steps of etching and opening the zinc sulfide passivation film in step S2 are: placing the device in a second etching solution for etching for 1-5 seconds; the second etching solution is concentrated hydrochloric acid.

[0021] The present invention also provides a mercury cadmium telluride device, wherein the electrode holes on the zinc sulfide / cadmium telluride composite passivation film of the mercury cadmium telluride device are opened by using any of the above opening methods.

[0022] Compared with the prior art, the present invention has the following beneficial effects:

[0023] (1) The present invention covers the side wall of the zinc sulfide passivation film opening with a protective layer after the zinc sulfide passivation film is opened and before the cadmium telluride passivation film is opened, thereby effectively avoiding the expansion corrosion of the zinc sulfide passivation film opening when the cadmium telluride passivation film is subsequently corroded and opened, and significantly improving the uniformity and accuracy of the opening diameter of the zinc sulfide / cadmium telluride composite passivation film;

[0024] (2) The present invention adopts pure wet etching, and the opening process of the zinc sulfide / cadmium telluride composite passivation film does not damage the mercury cadmium telluride epitaxial material;

[0025] (3) The present invention performs wet etching to open holes in the zinc sulfide passivation film and the cadmium telluride passivation film in steps, thereby avoiding the situation where the zinc sulfide passivation film is corroded with the same etching solution and the passivation hole of the zinc sulfide passivation film is expanded and corroded;

[0026] (4) The present invention uses the first etching solution to corrode the cadmium telluride passivation film, which does not corrode the mercury cadmium telluride material, effectively avoiding the corrosion of the mercury cadmium telluride material during the wet etching process, and improving the uniformity and accuracy of the pore depth of the zinc sulfide / cadmium telluride composite passivation film. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0028] Figure 1 A flow chart of a method for opening a hole in a zinc sulfide / cadmium telluride composite passivation film provided in an embodiment of the present invention;

[0029] Figure 2 A flow chart of a method for opening a hole in a zinc sulfide / cadmium telluride composite passivation film provided in an embodiment of the present invention;

[0030] In the figure: 1. Mercury cadmium telluride material; 2. Cadmium telluride passivation film; 3. Zinc sulfide passivation film; 4. Photoresist opening pattern; 5. Protective layer. DETAILED DESCRIPTION

[0031] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0032] In the description of the present invention, it should be understood that the terms "center", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", etc., indicating the orientation or position relationship are based on the orientation or position relationship shown in the drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present invention.

[0033] The terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include one or more of the features; in the description of the present invention, unless otherwise specified, "plurality" means two or more.

[0034] like Figure 1-Figure 2 As shown, this embodiment provides a method for opening a hole in a zinc sulfide / cadmium telluride composite passivation film, comprising the following steps:

[0035] S1, making a photoresist opening pattern 4 on the surface of the zinc sulfide / cadmium telluride composite passivation film of the device;

[0036] S2, corroding and opening the zinc sulfide passivation film 3;

[0037] S3, covering the side walls of the openings of the zinc sulfide passivation film 3 with a protective layer 5;

[0038] S4, etching the cadmium telluride passivation film 2 to open a hole;

[0039] S5, removing the protective layer 5 and the photoresist opening pattern 4.

[0040] In this embodiment, the zinc sulfide passivation film 3 and the cadmium telluride passivation film 2 are wet-etched and opened in steps, and after the zinc sulfide passivation film 3 is opened and before the cadmium telluride passivation film 2 is opened, the side wall of the opening of the zinc sulfide passivation film 3 is covered with a protective layer 5, thereby effectively avoiding the expansion corrosion of the opening of the zinc sulfide passivation film 3 when the cadmium telluride passivation film 2 is subsequently etched and opened, and significantly improving the uniformity and accuracy of the aperture of the zinc sulfide / cadmium telluride composite passivation film.

[0041] The above embodiment is optimized, and in step S4, the first etching solution is used to corrode and open the cadmium telluride passivation film 2, and the corrosion rate ratio of the first etching solution to the cadmium telluride passivation film 2 and the zinc sulfide passivation film 3 is (5-8): 1. The corrosion rate of the first etching solution used in this embodiment on the cadmium telluride passivation film 2 is much greater than the corrosion rate on the zinc sulfide passivation film 3, ensuring that when the first etching solution is used to corrode and open the hole, the cadmium telluride passivation film 2 is corroded more effectively, while the impact on the zinc sulfide passivation film 3 is relatively small, thereby avoiding the situation where the passivation opening of the zinc sulfide passivation film 3 causes corrosion expansion.

[0042] In one embodiment, the first etching solution is made of the following components: 250-300 ml of deionized water, 10-16 g of component A, 12-17 ml of concentrated nitric acid, and 12-17 ml of component B; the component A is chromium trioxide or potassium dichromate, and the component B is any one of hydrofluoric acid, citric acid, and phosphoric acid. Further, the volume concentration of the concentrated nitric acid is greater than 50%, and the volume concentration of the component B is 6% to 20%. The first etching solution of this embodiment can corrode the cadmium telluride passivation film 2 and the zinc sulfide passivation film 3, but does not corrode the mercury cadmium telluride material 1, effectively avoiding the corrosion of the mercury cadmium telluride material 1 during the wet etching process, and improving the uniformity and accuracy of the opening depth of the zinc sulfide / cadmium telluride composite passivation film. In addition, in this embodiment, by increasing the proportion of chromium trioxide or potassium dichromate in the first etching solution, the corrosion rate of the cadmium telluride passivation film 2 is increased, and the corrosion rate of the zinc sulfide is reduced, thereby improving the selective corrosion ability of the first etching solution on the cadmium telluride passivation film 2 and reducing the extended corrosion of the zinc sulfide passivation film 3; by increasing the proportion of concentrated nitric acid in the first etching solution, the corrosion rates of the cadmium telluride passivation film 2 and the zinc sulfide passivation film 3 are increased, and the corrosion rate of the cadmium telluride passivation film 2 increases more significantly, which can significantly improve the production efficiency.

[0043] The specific steps of etching and opening the cadmium telluride passivation film 2 in step S4 of this embodiment are: placing the device in the first etching solution for etching for 6-15 seconds, and then quickly flushing with water for more than 1 minute. By accurately controlling the etching time, it is ensured that the first etching solution can fully corrode the cadmium telluride passivation film 2, while avoiding unnecessary damage to the zinc sulfide passivation film 3; immediately flush with running deionized water for more than 1 minute after the etching is completed to ensure that the residual etching solution and corrosion products are thoroughly cleaned from the device surface.

[0044] In one of the embodiments, the specific steps of covering the side wall of the opening of the zinc sulfide passivation film 3 with the protective layer 5 in step S3 are: coating a positive resist on the device surface and baking the resist, exposing and developing, so that the positive resist on the front of the device and the bottom of the hole after the zinc sulfide passivation film 3 is opened is removed, and the positive resist on the side wall of the opening of the zinc sulfide passivation film 3 is retained and forms the protective layer 5. This embodiment uses a photolithography process to cover the side wall of the opening of the zinc sulfide passivation film 3 with the protective layer 5, which can not only ensure the uniformity and thickness consistency of the protective layer 5, but also realize precise control of the pattern and position of the protective layer 5. Among them, the coating of the positive resist can be specifically carried out by means of uniform coating or spraying.

[0045] Preferably, the adhesive is baked at a temperature of 85°C to 95°C for 5 to 10 minutes. The specific method of baking the adhesive in this embodiment is to place the device on a hot plate for heating, thereby removing water vapor in the positive photoresist. By precisely controlling the baking temperature and time, it is ensured that the water vapor in the positive photoresist is effectively removed while maintaining stable properties, thereby improving the accuracy and quality of the lithography pattern.

[0046] Preferably, the exposure is performed by full-surface exposure, and the exposure power is 10-20 W / cm 2 , the exposure time is 25-45 seconds. In this embodiment, the positive photoresist on the device surface is fully exposed, so that the positive photoresist on the front of the device sample and the bottom of the hole after the zinc sulfide passivation film 3 is opened are all exposed, and will be removed under the action of the developer, while the positive photoresist attached to the side wall of the opening of the zinc sulfide passivation film 3 is not exposed because it is parallel to the exposure beam of the photolithography machine, and is not removed after passing through the developer, and remains on the side wall, covering the side wall of the opening of the zinc sulfide passivation film 3, avoiding the first etching solution from contacting the zinc sulfide passivation film 3; at the same time, by accurately controlling the exposure power and time, it is ensured that the positive photoresist can fully absorb light energy and undergo chemical reactions, thereby improving the accuracy and quality of the photolithography pattern.

[0047] In this embodiment, the positive resist is preferably an AZ series positive resist, such as AZ5214, AZ6130, etc.

[0048] In one of the embodiments, the specific steps of making the photoresist opening pattern 4 in step S1 are: coating photoresist on the surface of the zinc sulfide / cadmium telluride composite passivation film of the device, and performing photolithography and development to expose the zinc sulfide / cadmium telluride composite passivation film in the area to be opened, and the zinc sulfide / cadmium telluride composite passivation film in the remaining area is covered by the photoresist.

[0049] The above embodiment is optimized, and the protective layer 5 and the photoresist opening pattern 4 are removed in step S5. The specific steps are: immersing the device in an acetone solution for 3 to 10 minutes to complete the removal of all photoresists on the sample surface and the positive photoresist on the opening side walls of the zinc sulfide passivation film 3.

[0050] In one embodiment, the specific steps of etching and opening the zinc sulfide passivation film 3 in step S2 are: placing the device in a second etching solution for etching for 1-5 seconds; the second etching solution is concentrated hydrochloric acid. Since concentrated hydrochloric acid cannot react with cadmium telluride, the cadmium telluride passivation film 2 will not be corroded when the zinc sulfide passivation film 3 is corroded with concentrated hydrochloric acid, so that the zinc sulfide passivation film 3 and the cadmium telluride passivation film 2 are wet-etched and opened in steps, avoiding the situation where the zinc sulfide passivation film 3 is corroded by the same etching solution and the zinc sulfide / cadmium telluride composite passivation film is corroded, resulting in the corrosion of the opening and expansion of the zinc sulfide passivation film 3.

[0051] The present invention also provides a mercury cadmium telluride device, wherein the electrode holes on the zinc sulfide / cadmium telluride composite passivation film of the mercury cadmium telluride device are made by using any of the above-mentioned hole-opening methods.

[0052] The above-mentioned hole-opening method is described below through two specific embodiments.

[0053] Example 1

[0054] A method for opening a hole in a zinc sulfide / cadmium telluride composite passivation film comprises the following steps:

[0055] S1, coating a photoresist on the surface of the zinc sulfide / cadmium telluride composite passivation film of the device, and performing photolithography and development to expose the zinc sulfide / cadmium telluride composite passivation film in the area to be opened, and covering the zinc sulfide / cadmium telluride composite passivation film in the remaining area with the photoresist, and completing the preparation of the photoresist opening pattern 4 on the surface of the zinc sulfide / cadmium telluride composite passivation film;

[0056] S2, placing the device in concentrated hydrochloric acid for 1 second to corrode the zinc sulfide passivation film 3 in the area to be opened, and completing the corrosion opening of the zinc sulfide passivation film 3;

[0057] S3. Apply AZ5214 positive photoresist evenly on the device surface, then place the device on a hot plate and heat at 95°C for 5 minutes to remove moisture from the positive photoresist. Then, expose the entire surface of the sample to the positive photoresist at an exposure power of 10W / cm 2, the exposure time is 45 seconds; then the developer is used for development treatment, at this time, the AZ5214 positive photoresist on the front of the device sample and the bottom of the hole after the zinc sulfide passivation film 3 is opened is exposed, and will be removed under the action of the developer, and the AZ5214 positive photoresist attached to the side wall of the opening of the zinc sulfide passivation film 3 is not exposed because it is parallel to the exposure beam of the photolithography machine, and is not removed after passing through the developer, and covers the side wall of the opening of the zinc sulfide passivation film 3 to form the protective layer 5;

[0058] S4, placing the device in the first etching solution for 6 seconds, and then quickly flushing with water for more than 1 minute to complete the etching and opening of the cadmium telluride passivation film 2; the first etching solution is made of the following components: 250 ml of deionized water, 10 g of potassium dichromate, 12 ml of concentrated nitric acid (volume concentration>50%), and 17 ml of citric acid (volume concentration 6% to 20%);

[0059] S5, immerse the device in an acetone solution for 3 minutes, remove the photoresist opening pattern 4 on the surface of the device sample and the protective layer 5 on the opening side wall of the zinc sulfide passivation film 3, and complete the opening of the zinc sulfide / cadmium telluride composite passivation film. Then, other subsequent chip manufacturing processes can be continued.

[0060] Example 2

[0061] A method for opening a hole in a zinc sulfide / cadmium telluride composite passivation film comprises the following steps:

[0062] S1, coating a photoresist on the surface of the zinc sulfide / cadmium telluride composite passivation film of the device, and performing photolithography and development to expose the zinc sulfide / cadmium telluride composite passivation film in the area to be opened, and covering the zinc sulfide / cadmium telluride composite passivation film in the remaining area with the photoresist, and completing the preparation of the photoresist opening pattern 4 on the surface of the zinc sulfide / cadmium telluride composite passivation film;

[0063] S2, placing the device in concentrated hydrochloric acid for 5 seconds to corrode the zinc sulfide passivation film 3 in the area to be opened, and completing the corrosion opening of the zinc sulfide passivation film 3;

[0064] S3. Apply AZ6130 positive photoresist evenly on the device surface, then place the device on a hot plate and heat at 85°C for 10 minutes to remove moisture from the positive photoresist. Then, expose the entire surface of the sample to the positive photoresist at an exposure power of 20W / cm 2 , the exposure time is 25 seconds; then the developer is used for development treatment, at this time, the AZ6130 positive photoresist on the front of the device sample and the bottom of the hole after the zinc sulfide passivation film 3 is opened is exposed, and will be removed under the action of the developer, and the AZ6130 positive photoresist attached to the side wall of the opening of the zinc sulfide passivation film 3 is not exposed because it is parallel to the exposure beam of the photolithography machine, and is not removed after passing through the developer, and covers the side wall of the opening of the zinc sulfide passivation film 3 to form the protective layer 5;

[0065] S4, placing the device in a first etching solution for 15 seconds, and then quickly flushing with water for more than 1 minute to complete the etching and opening of the cadmium telluride passivation film 2; the first etching solution is made of the following components: 300 ml of deionized water, 16 g of chromium trioxide, 17 ml of concentrated nitric acid (volume concentration>50%), and 12 ml of hydrofluoric acid (volume concentration 6% to 10%);

[0066] S5, immerse the device in an acetone solution for 10 minutes, remove the photoresist opening pattern 4 on the surface of the device sample and the protective layer 5 on the opening side wall of the zinc sulfide passivation film 3, and complete the opening of the zinc sulfide / cadmium telluride composite passivation film. Then, other subsequent chip manufacturing processes can be continued.

[0067] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims

1. A method for opening a hole in a zinc sulfide / cadmium telluride composite passivation film, characterized in that: The steps include: S1. Making a photoresist opening pattern on the surface of the zinc sulfide / cadmium telluride composite passivation film of the device; S2, corroding and opening the zinc sulfide passivation film; S3, covering the side walls of the openings of the zinc sulfide passivation film with a protective layer; S4, corroding and opening holes in the cadmium telluride passivation film; S5, removing the protective layer and the photoresist opening pattern.

2. The method for opening a hole in a zinc sulfide / cadmium telluride composite passivation film according to claim 1, characterized in that: In step S4, a first etching solution is used to corrode and open holes in the cadmium telluride passivation film, and the corrosion rate ratio of the first etching solution to the cadmium telluride passivation film and the zinc sulfide passivation film is (5-8):

1.

3. The method for opening a hole in a zinc sulfide / cadmium telluride composite passivation film according to claim 2, characterized in that: The first etching solution is made of the following components: 250-300 ml of deionized water, 10-16 g of component A, 12-17 ml of concentrated nitric acid, and 12-17 ml of component B; the component A is chromium trioxide or potassium dichromate, and the component B is any one of hydrofluoric acid, citric acid, and phosphoric acid.

4. The method for opening a hole in a zinc sulfide / cadmium telluride composite passivation film according to claim 2, characterized in that: The specific steps of etching and opening holes in the cadmium telluride passivation film in step S4 are: placing the device in the first etching solution for etching for 6-15 seconds, and then quickly flushing with water for more than 1 minute.

5. The method for opening a hole in a zinc sulfide / cadmium telluride composite passivation film according to claim 1, characterized in that: The specific steps of covering the side walls of the zinc sulfide passivation film opening with a protective layer in step S3 are: coating a positive resist on the device surface and baking the resist, exposing and developing the positive resist on the device front surface and the bottom of the zinc sulfide passivation film opening to be removed, and retaining the positive resist on the side walls of the zinc sulfide passivation film opening to form the protective layer.

6. The method for opening a hole in a zinc sulfide / cadmium telluride composite passivation film according to claim 5, characterized in that: The baking temperature is 85℃~95℃ for 5~10 minutes; the exposure adopts full-surface exposure, and the exposure power is 10-20W / cm 2 , exposure time is 25-45 seconds.

7. The method for opening a hole in a zinc sulfide / cadmium telluride composite passivation film according to claim 1, characterized in that: The specific steps of making the photoresist opening pattern in step S1 are: coating the surface of the zinc sulfide / cadmium telluride composite passivation film of the device with photoresist, and performing photolithography and development to expose the zinc sulfide / cadmium telluride composite passivation film in the area to be opened, and covering the zinc sulfide / cadmium telluride composite passivation film in the remaining area with photoresist.

8. The method for opening a hole in a zinc sulfide / cadmium telluride composite passivation film according to claim 7, characterized in that: The specific steps of removing the protective layer and the photoresist opening pattern in step S5 are: soaking the device in an acetone solution for 3 to 10 minutes.

9. The method for opening a hole in a zinc sulfide / cadmium telluride composite passivation film according to claim 1, characterized in that: The specific steps of corroding and opening the zinc sulfide passivation film in step S2 are: placing the device in a second corrosive solution for corroding for 1-5 seconds; the second corrosive solution is concentrated hydrochloric acid.

10. A mercury cadmium telluride device, characterized in that: The electrode holes on the zinc sulfide / cadmium telluride composite passivation film of the mercury cadmium telluride device are drilled using the drilling method described in any one of claims 1 to 9.

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