A method for preparing a copper-indium-gallium-selenium three-glass assembly and a three-glass assembly

Abstract

The present application relates to the technical field of solar cells, and discloses a preparation method of a copper-indium-gallium-selenium three-glass assembly and the three-glass assembly, which comprises a cover plate glass, a base plate glass, a back plate glass, a PVB encapsulating adhesive film and a butyl sealing adhesive tape, and the base plate glass comprises a copper-indium-gallium-selenium thin film layer, a molybdenum layer, a bus bar and a sodium-calcium glass. The base plate glass is arranged between the cover plate glass and the back plate glass, and the three-glass assembly is formed by laminating the base plate glass, the PVB encapsulating adhesive film and the butyl sealing adhesive tape after being combined, so that the copper-indium-gallium-selenium power generation base plate glass can be well protected. The three-glass assembly not only has the function of solar cell power generation, but also can replace part of building materials, reduces the occupation of limited space, well meets the current popular BIPV photovoltaic building integrated market demand, opens up a new field and a new market for the copper-indium-gallium-selenium thin film solar cell, and provides a basic scheme and technical support for other types of thin film solar cells.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of solar cells, in particular to a preparation method of a copper-indium-gallium-selenium three-glass assembly and the three-glass assembly. BACKGROUND

[0002] Solar cells, also known as photovoltaic cells, are devices that convert sunlight directly into electricity. They are widely used in residential, commercial, and industrial applications for generating and supplying electricity. As a clean energy technology, solar cells do not produce greenhouse gas emissions and help reduce dependence on fossil fuels. They are the core component of solar photovoltaic systems, which can utilize the photoelectric effect of semiconductor materials to generate electricity.

[0003] Solar cells work on the principle of the photoelectric effect. When light shines on certain materials, such as semiconductors, it excites electrons to jump from the valence band to the conduction band, creating free electrons and hole pairs, which generate an electric current. The basic structure of a solar cell includes a PN junction, which is the combination of a P-type semiconductor and an N-type semiconductor. When light hits the PN junction, electron-hole pairs are generated, and the electrons and holes are separated by the built-in electric field of the PN junction, forming an electric current. Solar cells are typically made of semiconductor materials, with silicon being the most commonly used material due to its appropriate bandgap and good photoelectric conversion efficiency.

[0004] Thin-film solar cells have become one of the most promising thin-film solar cells due to their low preparation cost, low temperature coefficient, and excellent weak light performance. They have entered a rapid development stage of industrialization. In particular, in the field of BIPV photovoltaic building integration, they show a good development trend.

[0005] The common structure of existing thin-film solar cells includes a copper-indium-gallium-selenium double-glass assembly. The substrate glass in the double-glass assembly is a TCO glass coated with copper-indium-gallium-selenium and molybdenum on the light-receiving surface, with a thickness of about 2.1 mm. The cover glass is ordinary tempered glass, with a thickness of about 3.2 mm. The tempered cover glass and the TCO substrate glass are laminated together to form a double-glass assembly, with a total thickness of about 5.6 mm (including the thickness of the EVA adhesive film).

[0006] The overall thickness of the above-mentioned 3.2+2.1 double-glass assembly is relatively low, and the mechanical load strength is insufficient. Therefore, it can only be installed separately on the building in an attached manner. In the terminal application, it still occupies a large amount of limited space like crystalline silicon photovoltaic cells. However, these limited available spaces are ultimately limited. Therefore, the existing copper-indium-gallium-selenium double-glass assembly cannot meet the development needs of photovoltaic building integration, and it is imperative to develop new photovoltaic assemblies combined with buildings.

[0007] SUMMARY

[0008] The technical problem solved by the present application is that the existing copper-indium-gallium-selenium double-glass assembly is difficult to meet the development needs of building integrated photovoltaics.

[0009] The object of the present application can be achieved by the following technical solutions.

[0010] A copper-indium-gallium-selenium three-glass assembly preparation method comprises the following steps:

[0011] S1: Clean the sodium-calcium glass with a molybdenum layer, and then perform cleaning again after obtaining P1 scribe lines in a laser scribe line system;

[0012] S2: Dry the cleaned sodium-calcium glass with hot air to obtain a substrate glass layer;

[0013] S3: Obtain a CIGS absorption layer on the substrate glass layer by using a magnetron sputtering method, a selenization method, and a co-evaporation method;

[0014] S4: Obtain a CdS / In2S3 buffer layer on the CIGS absorption layer by using a magnetron sputtering method, and then perform cleaning again after obtaining P2 scribe lines in a laser scribe line system;

[0015] S5: Form an AZO window layer on the CdS / In2S3 buffer layer by using a magnetron sputtering method, and then obtain P3 scribe lines in a mechanical scribe line system;

[0016] S6: Remove the MO layer at the edge of the substrate glass and the CIGS layer at the bus position;

[0017] S7: Weld a conductive bus bar on the MO electrode layer to obtain a substrate glass component;

[0018] S8: Lead out an external interface at the end of the bus bar of the substrate glass, and lay a pad with insulating tape;

[0019] S9: Paste butyl sealing tape around the light-receiving surface of the substrate glass, and keep the long side and the short side of the edge sealing tape overlapped;

[0020] S10: Fill the inside of the edge sealing tape of the light-receiving surface of the substrate glass obtained in S9 with PVB film, the overlap degree of the edge sealing tape and the PVB film is 2mm, fill the back surface (the other surface opposite to the light-receiving surface) of the substrate glass with PVB film, then use two pieces of 8mm tempered cover glass (located on both sides of the substrate glass as cover glass and back plate glass) to perform lamination treatment with the substrate glass to obtain a copper-indium-gallium-selenium three-glass power generation assembly.

[0021] In one scheme of the present application: in step S6, the molybdenum layer at the edge of the substrate glass is removed by a mechanical scribe, and the CIGS layer at the bus position is removed by a laser edge cleaning device.

[0022] In one aspect of the present application: in step S7, the welding process is performed by ultrasonic welding; and the bus bar is made of aluminum.

[0023] In one aspect of the present application: in step S9, the thickness of the butyl sealing tape is 1.5 mm.

[0024] In one aspect of the present application: in step S10, the thickness of the PVB encapsulation film is 1.14 mm.

[0025] In one aspect of the present application: in step S10, the size of the PVB film on the back of the substrate glass is 10 mm larger than the size of the substrate glass when laid.

[0026] In one aspect of the present application: in step S10, after the cover glass, the substrate glass, and the back glass are laminated, high-temperature adhesive tape is pasted at the four corner positions of the three-glass assembly, then the three-glass assembly is placed into the feeding port of the laminating machine, and after the air pressure of the laminating machine is confirmed, the laminating process is completed, then the laminated three-glass assembly is taken out, the excess film on the edge is removed, and the high-temperature adhesive tape is cleaned.

[0027] In one aspect of the present application: in the laminating process, the temperature of the laminating section is 155-158℃, the vacuum extraction time is 20-25 minutes, the first pressure is 20 Kpa for 50 seconds; the second pressure is 50 Kpa for 50 seconds; and the third pressure is 70 Kpa for 7 minutes.

[0028] In one aspect of the present application: in the laminating process, the temperature of the cold pressing section is 40-45℃ for 7 minutes; and the temperature of the hot pressing section is 143℃ for 35-40 minutes.

[0029] A copper indium gallium selenide three-glass assembly formed by the preparation method described above.

[0030] The beneficial effects of the present application are:

[0031] The three-glass assembly of the present application comprises a cover glass, a substrate glass, a back glass, a PVB encapsulation film, and a butyl sealing tape. The substrate glass comprises a copper indium gallium selenide thin film layer, a molybdenum layer, a bus bar, and a soda-lime glass. The substrate glass is between the cover glass and the back glass. After being laminated by the PVB encapsulation film and the butyl sealing tape, the three-glass assembly is formed by a laminating device, so that the copper indium gallium selenide power generation substrate glass can be well protected. Not only does it have the function of solar cell power generation, but it can also replace part of the building materials, reduce the occupation of limited space, and well meet the current hot BIPV photovoltaic building integrated market demand. It opens up new fields and markets for copper indium gallium selenide thin film solar cells, and provides basic solutions and technical support for other types of thin film solar cells.

[0032] Additional aspects and advantages of the present application will be made apparent from the following description. BRIEF DESCRIPTION OF DRAWINGS

[0033] The above and / or additional aspects and advantages of the present application will become apparent and be readily understood from the following description, taken in conjunction with the accompanying drawings, in which:

[0034] Figure 1 is a flow chart of the manufacturing method of the copper-indium-gallium-selenium three-glass module of the present application;

[0035] Figure 2 is a structural schematic diagram of the laminating machine equipment employed in the embodiment of the present application;

[0036] Figure 3 is a structural schematic diagram of the segmented laminating machine equipment employed in the embodiment of the present application.

[0037] The reference signs in the drawings are as follows: 1, laminating machine. DETAILED DESCRIPTION

[0038] The technical solutions in the embodiments of the present application will be described clearly and completely below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only some of the embodiments of the present application, but not all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative effort belong to the scope of protection of the present application.

[0039] In the description of the present application, it should be understood that the orientation description, such as the orientation or position relationship indicated by up, down, front, back, left, right, etc. is based on the orientation or position relationship shown in the drawings, and is only for the convenience of describing the present application and simplifying the description, and therefore cannot be understood as a limitation on the present application that the indicated device or element must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as a limitation on the present application.

[0040] In the description of the present application, the meaning of several is one or more, and the meaning of multiple is two or more. Greater than, less than, more than, etc. are understood as not including the number, and above, below, etc. are understood as including the number. If the first and the second are described, it is only for the purpose of distinguishing technical features, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features or the order of the indicated technical features.

[0041] The common structure of the existing thin-film solar cell is a copper indium gallium selenide double-glass assembly. The substrate glass in the double-glass assembly is a TCO glass coated with copper indium gallium selenide and molybdenum on the light-receiving surface, and has a thickness of about 2.1 mm. The cover glass is a common tempered glass, and has a thickness of about 3.2 mm. The tempered cover glass and the TCO substrate glass are laminated to form a double-glass assembly, and the total thickness of the double-glass assembly is about 5.6 mm (including the thickness of the EVA adhesive film).

[0042] The overall thickness of the 3.2+2.1 double-glass assembly is low, and the mechanical load strength is insufficient. Therefore, the copper indium gallium selenide double-glass assembly can only be installed on the building in an auxiliary manner. The terminal application of the copper indium gallium selenide double-glass assembly still occupies a large amount of limited space, like a crystalline silicon photovoltaic cell. However, the limited space is limited. Therefore, the existing copper indium gallium selenide double-glass assembly cannot meet the development needs of building integrated photovoltaics (BIPV), and it is imperative to develop new photovoltaic assemblies combined with buildings.

[0043] To solve the above problems, the present application provides a copper indium gallium selenide triple-glass assembly and a preparation method thereof. The copper indium gallium selenide triple-glass assembly comprises a cover glass, a substrate glass, a back glass, a PVB encapsulating adhesive film, and a butyl sealing tape. The substrate glass comprises a copper indium gallium selenide thin film layer, a molybdenum layer, and a soda-lime glass. An electrically conductive aluminum bus bar is welded on the side of the CIGS film layer in contact. The positive and negative electrodes are led out using adhesive wires. The substrate glass is between the cover glass and the back glass. The new triple-glass assembly is formed by the combination of the PVB encapsulating adhesive film and the edge sealing butyl tape. The triple-glass assembly is formed by lamination using a lamination device. The copper indium gallium selenide power generation substrate glass can be well protected. The copper indium gallium selenide triple-glass assembly not only has the function of solar cell power generation but also can replace part of the building materials, reduce the occupation of limited space, and well meet the current hot BIPV market demand. The copper indium gallium selenide triple-glass assembly opens up new fields and markets for copper indium gallium selenide thin-film solar cells, and provides a basic scheme and technical support for other types of thin-film solar cells.

[0044] Please refer to Figures 1-2 The present application is a copper indium gallium selenide triple-glass assembly. The copper indium gallium selenide triple-glass assembly comprises a cover glass, a substrate glass, a back glass, a PVB encapsulating adhesive film, and a butyl sealing tape. The substrate glass is between the cover glass and the back glass, so that the copper indium gallium selenide power generation substrate glass can be well protected. The triple-glass assembly is formed by the combination of the PVB encapsulating adhesive film and the edge sealing butyl tape, and is formed into a new triple-glass assembly after lamination using a lamination device. The substrate glass comprises a copper indium gallium selenide thin film layer, a molybdenum layer, and a 2.1 mm soda-lime glass. An electrically conductive bus bar (which can be made of aluminum) is welded on the side of the CIGS film layer in contact.

[0045] A preparation method of the copper indium gallium selenide triple-glass assembly described above comprises the following steps:

[0046] S1: the sodium-calcium glass with molybdenum layer (Mo) is cleaned by a cleaning machine, and then is subjected to laser line marking to obtain P1 line marking and is cleaned again;

[0047] S2: the cleaned sodium-calcium glass is dried by hot air to obtain a substrate glass layer;

[0048] S3: a CIGS absorbing layer is obtained on the substrate glass layer by a magnetron sputtering method, selenization and co-evaporation method;

[0049] S4: a CdS / In2S3 buffer layer is obtained on the CIGS absorbing layer by a magnetron sputtering method, and then is subjected to laser line marking to obtain P2 line marking and is cleaned again;

[0050] S5: an AZO window layer is formed on the CdS / In2S3 buffer layer by a magnetron sputtering method, and is subjected to mechanical line marking to obtain P3 line marking;

[0051] S6: the MO layer on the edge of the substrate glass and the CIGS layer on the busbar position are removed, specifically, the molybdenum layer (Mo) on the edge of the substrate glass is removed by a mechanical knife, and the CIGS layer on the busbar position is removed by a laser edge cleaning device;

[0052] S7: a busbar is welded on the MO electrode layer to obtain a substrate glass component; the welding process can be performed by ultrasonic welding, and the busbar is made of conductive material, such as an aluminum busbar;

[0053] S8: an external interface (positive and negative electrodes) is led out from the end of the busbar of the substrate glass, and an insulating tape with a thickness of about 0.1 (mm) is laid to protect the lead wire;

[0054] S9: a butyl sealing tape is attached around the light-receiving surface of the substrate glass at a position about 2 mm away from the edge, the thickness of the butyl sealing tape can be between 0.7 mm and 1.5 mm, and the long side and the short side are kept overlapping;

[0055] S10: the inside of the edge sealing tape of the light-receiving surface of the substrate glass obtained in S9 is filled with PVB film, the overlap range of the edge sealing tape and the PVB film can be between 1.5 mm and 3 mm, and the preferred overlap width size is 2 mm, the back surface (the other surface opposite to the light-receiving surface) of the substrate glass needs to be filled with PVB film, then two pieces of 8 mm tempered glass are used to perform lamination (located on both sides of the substrate glass as cover glass and back glass), and then lamination treatment is performed to obtain a copper indium gallium selenide three-glass power generation assembly.

[0056] The step S10 specifically includes the following steps:

[0057] S10.1: the substrate glass with the lead wire connected is put into an automatic line to complete butyl sealing tape edge sealing;

[0058] S10.2: The PVB adhesive film with a thickness of 1.14 mm is cut to the target size and laid on the light-receiving surface of the substrate glass, and after debugging, it is combined with the first 8 mm tempered cover plate glass, then the PVB adhesive film larger than the size of the substrate glass is cut and laid on the back surface, and then combined with the second 8 mm tempered cover plate glass to complete the lamination process before lamination; wherein the thickness of the PVB packaging adhesive film can be between 0.76 mm and 1.5 mm, the size of the PVB adhesive film on the back surface of the substrate glass is 5 mm-15 mm larger than the size of the substrate glass when laid, and as an example, the size of the PVB adhesive film on the back surface of the substrate glass is 10 mm larger than the size of the substrate glass when laid.

[0059] S10.3: After the cover plate glass, substrate glass, and back plate glass are combined, high-temperature adhesive tape is pasted at the four corner positions of the three-glass assembly to prevent the 8 mm glass from shifting, and then it is placed into the feeding port of the laminator 1. After the equipment air pressure of the laminator 1 is confirmed, the post-lamination process is completed.

[0060] S10.4: In order to balance the heating and stress of the assembly, the three-glass assemblies are evenly distributed, and the number of single lamination is 3 groups (three-glass assemblies) considering the weight and the size of the lamination chamber.

[0061] S10.5: The three-glass assembly after lamination is taken out, the edge overflow adhesive film is removed, and the high-temperature adhesive tape is cleaned, and the three-glass assembly lamination is completed.

[0062] In an embodiment of the present application, the lamination process is carried out in the laminator 1. In the lamination process, the temperature of the lamination section can be 155-158℃, the vacuum extraction time is 20-25 minutes, the first pressure is 20Kpa-30Kpa, the time is 30-60 seconds, the second pressure is 50Kpa-70Kpa, the time is 30-60 seconds, and the third pressure is 50Kpa-90Kpa, the time is 3-10 minutes. The temperature of the hot pressing section is 140℃-145℃, and the time is 35-40 minutes.

[0063] As an example, the temperature of the lamination section can be 155-158℃, the vacuum extraction time is 20-25 minutes, the first pressure is 20Kpa, the time is 50 seconds, the second pressure is 50Kpa, the time is 50 seconds, the third pressure is 70Kpa, the time is 7 minutes. The temperature of the cold pressing section is 40-45℃, and the time is 7 minutes. The temperature of the hot pressing section is 143℃, and the time is 35-40 minutes.

[0064] The above describes one embodiment of the present application in detail, but the content described is only the preferred embodiment of the present application and cannot be considered as limiting the scope of the implementation of the present application. Any equivalent changes and improvements made in accordance with the scope of the present application should still be within the scope of the claims of the present application.

Claims

1. A method for preparing a copper indium gallium selenide triple-glass component, characterized in that: The steps include: S1: The soda-lime glass with the molybdenum layer is cleaned, enters the laser scribing system to obtain the P1 scribing line, and then is cleaned again; S2: drying the cleaned soda-lime glass with hot air to obtain substrate glass; S3: obtaining a CIGS absorption layer on the substrate glass by magnetron sputtering, selenization and co-evaporation; S4: A CdS / In2S3 buffer layer is obtained on the CIGS absorption layer by magnetron sputtering, and then the layer enters a laser scribing system to obtain a P2 scribing line and is then cleaned again; S5: forming an AZO window layer on the CdS / In2S3 buffer layer by magnetron sputtering, and entering a laser scribing system to obtain a P3 scribing line; S6: Clear the molybdenum layer on the edge of the substrate glass and the CIGS layer on the confluence position; S7: welding a conductive bus bar on the molybdenum layer to obtain a substrate glass; S8: Lead out the busbar end of the substrate glass to obtain an external interface, and pave it with insulating tape; S9: Stick butyl sealing tape around the light-receiving surface of the substrate glass, and keep the long side and short side of the sealing tape overlapping; S10: The light-receiving surface of the substrate glass obtained in S9 is covered with a PVB film inside the sealing tape, with the overlap between the sealing tape and the PVB film being 1.5 mm to 3 mm. The back of the substrate glass is covered with the PVB film, and two pieces of 8 mm tempered glass are then combined with the substrate glass, and then a lamination process is performed to prepare a copper indium gallium selenide triple-glass power generation module product. During the lamination process, the temperature of the lamination section is set to 155-158°C, the vacuum time is set to 20-25 minutes, the pressure one is 20Kpa-30Kpa, the time is 30-60 seconds; the pressure two is 50Kpa-70Kpa, the time is 30-60 seconds; the pressure three is 50Kpa-90Kpa, the time is 3-10 minutes.

2. The method for preparing a copper indium gallium selenide triple-glass component according to claim 1, characterized in that: In step S6, a mechanical cutter is used to remove the molybdenum layer at the edge of the substrate glass, and a laser edge cleaning device is used to remove the CIGS layer at the confluence position.

3. The method for preparing a copper indium gallium selenide triple-glass component according to claim 1, characterized in that: In step S7, the welding process is performed by ultrasonic welding; the busbar is an aluminum busbar.

4. The method for preparing a copper indium gallium selenide triple-glass component according to claim 1, characterized in that: In step S9 , the thickness of the sealing tape is 0.7 mm to 1.5 mm.

5. The method for preparing a copper indium gallium selenide triple-glass component according to claim 1, characterized in that: In step S10, the thickness of the PVB film is 0.76 mm-1.5 mm.

6. The method for preparing a copper indium gallium selenide triple-glass component according to claim 5, characterized in that: In step S10 , the size of the PVB film on the back of the substrate glass is 5 mm to 15 mm larger than the size of the substrate glass during laying.

7. The method for preparing a copper indium gallium selenide triple-glass component according to claim 1, characterized in that: In step S10, high-temperature adhesive tape is pasted on the four corners of the three-glass assembly after the cover glass, substrate glass, and back glass are assembled to fix it. Then, the assembly is placed in the feed port of the laminator. After the laminator equipment is pressurized and the machine is confirmed to be normal, the lamination process is completed. Finally, the laminated three-glass assembly is taken out, the overflowed film on the edge is removed, and the high-temperature adhesive tape is cleaned off.

8. The method for preparing a copper indium gallium selenide triple-glass component according to claim 1, characterized in that: During the lamination process, the temperature of the cold pressing section is 40-45°C, and the time is 3-10 minutes; the temperature of the hot pressing section is 140-145°C, and the time is 35-40 minutes.

9. A triple-glass module, wherein the triple-glass module is prepared according to the method for preparing a copper indium gallium selenide triple-glass module according to any one of claims 1 to 8.

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