Voltage-controlled three-terminal magnetic transistor and method of controlling and fabricating the same

Abstract

The application provides a voltage-controlled three-terminal magnetic sub-crystal transistor, which comprises a ferroelectric layer, a magnetic layer, a generating terminal, a control terminal, a detecting terminal and a bottom electrode; the generating terminal generates magnetic sub-crystals in the magnetic layer after current is input; the detecting terminal is made of heavy metal material and can convert the magnetic sub-crystals in the magnetic layer into charge flow; when the voltage pulse applied between the control terminal and the bottom electrode exceeds a critical value, the non-volatile electrode polarization and the non-volatile strain state of the ferroelectric layer change, and then the transmission ability of the magnetic sub-crystals in the magnetic layer is affected through the magnetoelectric coupling effect between the ferroelectric layer and the magnetic layer, and the voltage signal of the detecting terminal regularly changes in a hysteresis loop with the change of the voltage pulse. Further, the application also discloses a control method and a preparation method of the above device. The three-terminal magnetic sub-crystal transistor disclosed by the application can work in a wide temperature range including room temperature, has a high on-off ratio and is non-volatile.

Description

TECHNICAL FIELD

[0001] The present application belongs to the field of microelectronic information devices, and particularly relates to a voltage-controlled three-terminal magnetic subtransistor and a control method and a preparation method thereof. BACKGROUND

[0002] The invention of transistor is a milestone in the development of modern electronic technology. Since the 1960s, the density of transistors in integrated circuits has doubled approximately every two years, following Moore's law. However, with the increase of integrated density and operating speed, electronic devices are facing serious power consumption problems, which significantly limit the future development of integrated circuits. Therefore, the further development of transistors cannot rely solely on the charge properties of electrons, and alternative solutions need to be found. Magnon is the collective excitation of magnetic moment, which can carry spin information without the movement of electric charge. This process does not have the problem of additional Joule heat, so magnon is an information carrier highly expected in the post-Moore era. In view of the current obstacles faced by transistors, it is very important to design and manufacture a low-power magnon transistor.

[0003] As Figure 1As shown, a three-terminal magnon transistor is generally composed of four parts, namely the generation end 1 (S), the control end 2 (G), the detection end 3 (D) and the medium 4 for transmitting magnons (i.e. magnon transmission medium). In the existing technologies, the technology represented by Andrii V. Chumak et al. (Magnon transistor for all-magnon data processing, Nature Communications 5, 4700, 2014) requires a microwave source to generate a microwave current to be injected into the generation end, a vector network analyzer to detect magnons at the detection end, and a microwave current to be applied to the control end to locally generate a large number of magnons and control the transmission of magnons from the generation end to the detection end by regulating the scattering between magnons. On the one hand, the microwave source and the vector network analyzer are both expensive devices. On the other hand, the application of a microwave current to the control end to regulate the transmission of magnons will introduce additional Joule heat, and the technology is also volatile. The technology represented by L.J. Cornelissen et al. (Spin-Current-Controlled Modulation of the Magnon Spin Conductance in a Three-Terminal Magnon Transistor, Physical Review Letters 120, 097702, 2018) injects a low-frequency alternating current into the generation end to generate magnons, and detects magnon information by 1-fold and 2-fold frequency signals at the detection end. The technology applies a direct current to the control end to regulate the transmission of magnons, which will also cause additional Joule heat, and the working temperature is lower than room temperature, which is 250 Kelvin, and the on-off ratio is low (1.6% / mA), and the technology is also volatile. The technology represented by K.S. Das et al. (Modulation of magnon spin transport in a magnetic gate transistor, Physical Review B 101, 054436, 2020) is similar to the technology of L.J. Cornelissen et al. in the generation end and the detection end. The control end of the technology is an iron-nickel alloy, the control mode is a magnetic field, the magnetic field is applied in the vertical direction of the strip, the direction of the magnetic moment of the iron-nickel alloy relative to the magnetic moment of the yttrium iron garnet transmission medium is changed, thereby affecting the transmission of magnons, and the on-off ratio is not high (18%), and the technology is also volatile.The technology represented by Guangyi Chen et al. (Electrically switchable van der Waals magnon valves, Nature Communications, 12, 6279, 2021) uses two-dimensional MnPS3 as the transmission medium of the device, and the control mode is direct current. A larger direct current is applied to the control end to affect the transmission of magnons, which will also introduce additional Joule heat, and the device needs to work at an extremely low temperature (2 Kelvin).

[0004] As can be seen, the existing control modes of three-terminal magnon transistors mainly include microwave current, direct current and magnetic field. These control modes will cause the generation of additional Joule heat, and have the disadvantage of high power consumption. In addition, the working temperature of the current device is below room temperature (its working temperature is 250 Kelvin), or even extremely low temperature (its working temperature is 2 Kelvin), and it is volatile. SUMMARY

[0005] To solve the above problems, the present application provides a voltage-controlled three-terminal magnon transistor, which can work in a wide temperature range including room temperature (about 300 Kelvin), has a high on-off ratio, and is non-volatile. Further, the control method and preparation method of the above-mentioned voltage-controlled three-terminal magnon transistor are further provided.

[0006] The first aspect of the present application provides a voltage-controlled three-terminal magnon transistor, comprising: a ferroelectric layer; a magnetic layer formed on a first surface of the ferroelectric layer; a generation end, a control end and a detection end formed on the magnetic layer; a bottom electrode formed on a second surface of the ferroelectric layer, the second surface and the first surface being arranged opposite to each other.

[0007] Wherein, the generation end is further configured to generate magnons in the magnetic layer by thermal effect after the current is applied; the detection end is further configured to be made of heavy metal material, and can convert the magnons in the magnetic layer into charge current by using the strong spin-orbit coupling effect; the ferroelectric layer is further configured to change the non-volatile polarization and non-volatile strain state when the voltage pulse applied between the control end and the bottom electrode exceeds the critical value, and then affect the transmission ability of the magnons in the magnetic layer through the magnetoelectric coupling effect between the ferroelectric layer and the magnetic layer; the detection end is further configured to have a regular hysteresis change behavior with the change of the voltage signal of the voltage pulse.

[0008] As an optional solution, the generation end is further configured to be made of heavy metal material. After the current is applied, spin current is generated by using the strong spin-orbit coupling effect, and the spin current is converted into magnons after being injected into the magnetic layer.

[0009] As an option, the control terminal is made of a metal material.

[0010] As an option, the ferroelectric layer is a ferroelectric substrate, a ferroelectric film or a ferroelectric sheet; the material of the ferroelectric layer is any one of lead magnesium niobate-lead titanate, lead zirconate titanate, barium titanate, potassium dihydrogen phosphate, lead titanate, lead tungstate, preferably lead magnesium niobate-lead titanate.

[0011] As an option, the ferroelectric layer is a ferroelectric film or a ferroelectric sheet with a thickness of 1 nanometer to 2 micrometers.

[0012] As an option, the magnetic layer is made of a magnetic insulator material; the magnetic insulator material includes yttrium iron garnet ferrite, ferric trioxide, chromium trioxide, preferably yttrium iron garnet ferrite.

[0013] As an option, the thickness of the magnetic layer is 1 nanometer to 100 micrometers, preferably 100±50 nanometers.

[0014] As an option, the bottom electrode is located directly below the control terminal and covers the control terminal, is made of a conductive material, and the conductive material includes at least one of platinum, gold, palladium, tungsten, tantalum, silver, copper, aluminum, titanium, silicon, gallium arsenide, gallium nitride, titanium dioxide.

[0015] The second aspect of the present application provides a control method of a three-terminal magnetic sublattice transistor, based on the three-terminal magnetic sublattice transistor of the first aspect or any one of the optional solutions thereof; comprising: passing a direct current or a low-frequency alternating current through the generation terminal; applying a voltage pulse V g1 to V g1 between the control terminal and the bottom electrode. g When the voltage pulse V g is greater than a positive critical value V t , the transport ability of the magnetic sublattice in the magnetic insulating layer becomes stronger, and the voltage signal V of the detection terminal becomes larger; applying a voltage pulse V g1 to V g1 between the control terminal and the bottom electrode. g When V g is less than a negative critical value V t , the transport ability of the magnetic sublattice becomes weaker, and the voltage signal V of the detection terminal becomes smaller, thereby realizing the regular hysteresis behavior of the voltage signal of the detection terminal with the change of the voltage pulse.

[0016] The third aspect of the present application provides a preparation method for preparing the three-terminal magnetic sub-wave transistor of the first aspect or any of the alternatives thereof, comprising: providing a ferroelectric substrate or making a ferroelectric film as a ferroelectric layer; growing a magnetic layer film on a first surface of the ferroelectric layer by a thin film growth technique; making the generation end, the control end and the detection end arranged in sequence side by side on the magnetic insulator layer film by ultraviolet lithography, electron beam exposure technique or etching technique and plating technique; and finally growing a bottom electrode on a second surface of the ferroelectric layer.

[0017] The present application has the following beneficial effects:

[0018] (1) The voltage-controlled three-terminal magnetic sub-wave transistor disclosed in the present application adopts a unique structural design, and the metal material, the magnetic layer and the ferroelectric layer contained in the device can work in a wide temperature range including room temperature, so the use range is wider and the device does not need to be limited to work in a low-temperature environment or an extremely low-temperature environment.

[0019] (2) The control mode of the voltage-controlled three-terminal magnetic sub-wave transistor disclosed in the present application is voltage control, and the voltage applied between the magnetic layer and the ferroelectric layer will not cause the generation of current, so no additional Joule heat will be generated, and the device is more energy-saving, and the problem of additional power consumption caused by the control mode of microwave current, direct current or external magnetic field can be solved.

[0020] (3) The present application utilizes the magnetoelectric coupling effect of the ferroelectric layer and the magnetic layer. When the applied voltage exceeds the critical value, the non-volatile polarization and the non-volatile strain state of the ferroelectric layer will change, and the magnetoelectric coupling effect further affects the physical properties (such as magnetic anisotropy, magnetic exchange constant, damping coefficient, decay length, etc.) of the magnetic layer, thereby affecting the transmission ability of the magnetic sub-wave in the magnetic layer, and ultimately affecting the magnetic sub-wave intensity reaching the detection end. Correspondingly, the greater the voltage control efficiency on the properties of the magnetic layer, the greater the change in the magnetic sub-wave intensity reaching the detection end, that is, a large on-off ratio is achieved. Since the regulation of the polarization and strain of the ferroelectric layer is non-volatile, the state of the polarization and strain will be maintained after the applied voltage is removed, so that non-volatile operation of the magnetic sub-wave transmission ability can be realized. BRIEF DESCRIPTION OF DRAWINGS

[0021] Figure 1 FIG. 1 is a structural schematic diagram of a three-terminal magnetic sub-wave transistor in the prior art, wherein (a) is a top view and (b) is a sectional view; Figure 1 Legend: 1 - generation end (S) of magnetic sub-wave, 2 - control end (G) of magnetic sub-wave, 3 - detection end (D) of magnetic sub-wave, 4 - transmission medium of magnetic sub-wave.

[0022] Figure 2 FIG. 2 is a structural schematic diagram of a three-terminal magnetic sub-wave transistor in an embodiment;

[0023] Figure 3This is a schematic diagram of the fabrication process of the three-terminal magnetic transistor in the embodiment;

[0024] Figure 4 The diagram shows the operation of the three-terminal magnetic transistor in the embodiment, where (a) is a top view and (b) is a side view.

[0025] Figure 5 This is a schematic diagram of the voltage signal detected by the three-terminal magnetic transistor in the embodiment changing with the voltage pulse;

[0026] Figure 6 The figure shows experimental data of the voltage signal detected by the three-terminal magnetic transistor in the embodiment as a function of voltage pulse.

[0027] Figure 2 , Figure 3 , Figure 4 The labels in the diagram are as follows: 1-Ferroelectric layer, 2-Magnetic layer, 3-Generation end, 4-Control end, 5-Detection end, 6-Bottom electrode, 7-Current source for applying current, 8-Voltmeter for detecting voltage signal, 9-Voltage source for applying voltage pulse. Detailed Implementation

[0028] The following will describe specific embodiments and appendices. Figures 2 to 6 The technical solutions of the present invention have been clearly and completely described. Obviously, the described embodiments are only some embodiments of the present invention, and not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of the present invention.

[0029] like Figure 2 As shown, Embodiment 1 provides a voltage-controlled three-terminal magnetic transistor, mainly composed of a ferroelectric layer 1, a magnetic layer 2, a generation terminal 3, a control terminal 4, a detection terminal 5, and a bottom electrode 6. The ferroelectric layer 1 is a ferroelectric substrate, ferroelectric thin film, or ferroelectric sheet. By applying a voltage, its polarization and strain states can be changed, thereby controlling the efficiency of magnetic particle transport in the magnetic insulator layer through the magnetoelectric coupling effect of the ferroelectric-ferromagnetic system. Materials that can be used for the ferroelectric layer 1 include lead magnesium niobate-lead titanate (PMN). x -PT 1-xMaterials include lead zirconate titanate (PZT), barium titanate (BaTiO3), potassium dihydrogen phosphate (KH2PO4), lead titanate (PbTiO3), and lead tungstate (PbZrO3). Lead magnesium niobate-lead titanate is preferred due to its wide operating temperature range, strong piezoelectric effect, and mature fabrication technology. This device is insensitive to the thickness of the ferroelectric layer 1. Millimeter-thick ferroelectric substrates can be commercially available, or ferroelectric thin films or flakes with a thickness of 1 nanometer to 2 millimeters can be grown on suitable substrates (such as silicon wafers). Compared to ferroelectric substrates, the advantage of using ferroelectric thin films is that only a small voltage is required to achieve the same electric field strength.

[0030] Magnetic layer 2, i.e., the magnetic wave transport medium, can be obtained by growing a magnetic thin film on ferroelectric layer 1 using a thin film growth device. Specifically, a magnetic material with a magnetic ordering temperature higher than room temperature, a small damping coefficient, and a long magnetic wave transport distance can be selected to prepare the magnetic thin film. Considering that the damping factor of magnetic insulators is generally lower than that of magnetic metals, and the magnetic wave transport distance is generally greater than that of magnetic metals, a magnetic insulator material is preferred for preparing magnetic layer 2, such as yttrium iron garnet ferrite (Y3Fe5O4). 12 Magnets such as YIG (Fe2O3), ferric oxide (Fe2O3), and chromium oxide (Cr2O3) are used, with YIG being a preferred material for magnetic insulators due to its mature preparation technology, wide operating temperature range, very low damping factor, and long magnetic particle transmission distance. The thickness of the magnetic insulator thin film typically ranges from 1 nanometer to 100 micrometers, with 100 ± 50 nanometers being preferred. Within this range, the properties of the magnetic thin film are close to those of a bulk material, exhibiting a low damping coefficient, long magnetic particle transmission distance, and minimal attenuation of the magnetoelectric coupling effect.

[0031] The generating end 3, control end 4, and detection end 5 are all microstrips formed on the surface of the magnetic layer 2. The generating end 3 and control end 4 can be made of conductive materials, such as metallic conductive materials like platinum, gold, palladium, tungsten, tantalum, silver, copper, aluminum, titanium, and titanium dioxide, or non-metallic conductive materials like silicon, gallium arsenide, and gallium nitride. When current is applied to the generating end 3, a magneton is generated in the magnetic layer 2 through a thermal effect (e.g., the spin Seebeck effect). The detection end 5 is made of a heavy metal material, such as platinum, gold, palladium, tungsten, or tantalum, to detect the magneton. Preferably, the generating end 3 is made of a heavy metal, which allows for the simultaneous generation of a magneton in the magnetic layer 2 using the thermal effect caused by heating, and the generation of a spin current using its strong spin-orbit coupling, which is then converted into a magneton in the insulating layer 2. Furthermore, considering the simplicity of the process, the three terminals—generating end 3, control end 4, and detection end 5—can be made of the same heavy metal material, requiring only one exposure and coating. The dimensions and spacing of the three microstrips can be designed using conventional methods. For example, the strip length is 10 micrometers, the width is 0.5 micrometers, and the strip spacing is 0.5 micrometers. In practical applications, the dimensions and spacing of the microstrips can be further reduced as needed. When reducing the size, it is not necessary to follow the above example proportionally.

[0032] The bottom electrode 6 is formed on the side opposite to the ferroelectric layer 1 and the magnetic layer 2. The bottom electrode 6 serves as an electrode for applying voltage and can be made of a conductive material, such as conductive metals like platinum, gold, palladium, tungsten, tantalum, silver, copper, aluminum, and titanium, or semiconductor materials like silicon, gallium arsenide, gallium nitride, and titanium dioxide. The bottom electrode 6 is preferably located directly below the control terminal 4, and its size is similar to that of the control terminal 4. Preferably, the bottom electrode 6 is arranged directly opposite to the control terminal 4 and covers it.

[0033] The working principle of the three-terminal magnetic transistor described in Example 1 is as follows: Figure 4 As shown in (a), a direct current (or low-frequency alternating current) I is supplied to the generating terminal 3 using a current source 7. The generating terminal 3 is made of a conductive material. Spin current can be injected into the magnetic layer 2 through two methods: 1) The current in the generating terminal 3 will cause the magnetic layer 2 to heat up, establishing a temperature gradient. Magnetons will be generated in the magnetic layer through the thermal effect. The polarization direction of these magnetons can be adjusted by the in-plane magnetic field μ0H; 2) If the generating terminal 3 is made of a heavy metal material, its strong spin-orbit coupling effect can also be used to make the charge flow directly generate a spin current, which is then converted into magnetons in the magnetic layer 2. The polarization direction of these magnetons is controlled by the direction of the charge flow in the generating terminal 3. The magnetons are transmitted to the right in the magnetic layer 2 and reach the detection terminal 5. The detection terminal 5, made of a heavy metal material, uses its strong spin-orbit coupling effect to convert the magnetons into a charge flow, and the voltage signal V of the detection terminal 5 can be obtained using a voltmeter 8 (or a lock-in amplifier).

[0034] like Figure 4 As shown in (b), based onFigure 4 (a) the three-terminal magnetic nanotransistor, when the applied voltage produces an electric field intensity in the ferroelectric layer that exceeds a critical value, the non-volatile polarization and non-volatile strain state of the ferroelectric layer changes. In which the critical electric field intensity is the intrinsic property of the ferroelectric material, the numerical value mainly depends on the choice of material. Since the electric field is equal to the voltage divided by the distance between the control terminal 4 and the bottom electrode 6, the critical value of the voltage is also related to the thickness of the ferroelectric layer and the magnetic transport layer. For the same device, since the material and thickness are fixed values, the voltage intensity is linearly related to the voltage. That is, when a voltage pulse V g is applied between the control terminal 4 and the bottom electrode 6, the polarization and strain of the ferroelectric layer 1 change, and the magnetic sub-transmission capability of the magnetic layer 2 is affected through the magnetoelectric coupling effect between the ferroelectric layer 1 and the magnetic layer 2. Since the change of polarization and strain in the ferroelectric layer 1 is non-volatile, even after the voltage pulse is removed, the polarization and strain state of the ferroelectric layer 1 can be maintained, thereby realizing the non-volatile regulation of the magnetic sub-transmission capability of the magnetic layer 2. g

[0035] Specifically, a voltage pulse of -V g1 to V g1 is applied between the control terminal 4 and the bottom electrode 6, the width of the voltage pulse can be selected between 1 nanosecond to 10 seconds, and the pulse waveform is not limited, which can be step, slope, ladder, etc. When the voltage is greater than the positive critical value V t , the polarization and strain in the ferroelectric layer 1 change, and the magnetic sub-transmission capability in the magnetic layer 2 is enhanced through the magnetoelectric coupling effect, and it is observed in experiments that the voltage signal V of the detection terminal 5 becomes larger; the voltage pulse of V g1 to -V g1 , when the voltage is lower than the negative critical value -V t , the polarization and strain in the ferroelectric layer 1 change, and the magnetic sub-transmission capability in the magnetic layer 2 is weakened through the magnetoelectric coupling effect, and it is observed in experiments that the voltage signal V of the detection terminal 5 becomes smaller. In summary, the voltage signal V of the detection terminal 5 changes regularly with the change of the voltage pulse V g , that is, the dependence of V and V g , as shown in Figure 5 .

[0036] Figure 6 ​​As shown, in one embodiment, for a 0.5 mm thick lead magnesium niobate-lead titanate (ferroelectric layer 1) and a 100 nm thick yttrium iron garnet ferrite (magnetic layer 2), a voltage pulse of different values from -200 volts to +200 volts to -200 volts can be applied, with a pulse width of 10 seconds and a ramped pulse shape, and the voltage signal actually measured by the probe 5. It can be seen that the voltage signal V measured by the probe 5 changes significantly at +150 volts and -100 volts, which corresponds to the change in polarization and strain state of the lead magnesium niobate-lead titanate, thereby affecting the transport ability of the magnons in the yttrium iron garnet ferrite.

[0037] In combination Figure 3 As shown, the embodiment 2 discloses a method for preparing the three-terminal magnonic transistor described in embodiment 1. The method mainly includes the following steps:

[0038] Step 1: using a commercially purchased 0.5 mm thick lead magnesium niobate-lead titanate single crystal substrate as the carrier of the device, thereby obtaining the ferroelectric layer 1;

[0039] Step 2: growing a magnetic layer thin film on the front surface of the ferroelectric layer 1 using thin film growth technology, for example, growing a 100 nm thick yttrium iron garnet ferrite;

[0040] Step 3: using ultraviolet lithography, electron beam exposure technology or etching technology and plating technology to make three nanometer thick metal strips on the magnetic layer thin film, for example, a 10 micrometer long, 0.5 micrometer wide, 0.5 micrometer strip spacing, 5 nanometer thick platinum;

[0041] Step 4: growing a bottom electrode 6 on the back surface of the ferroelectric layer 1 opposite to the position of the control terminal 4, for example, growing a 100 nm thick gold as the bottom electrode 6, thereby forming the target three-terminal magnonic transistor.

[0042] Finally, it should be noted that although examples of the present application have been shown and described as much as possible, those skilled in the art can still modify, improve, etc. the present application with reference to the foregoing examples, which should be included in the protection scope of the present application.

Claims

1. A voltage-controlled three-terminal magnetic subcrystal transistor, characterized by, The application relates to a voltage-controlled three-terminal magnonic transistor, comprising: a ferroelectric layer; a magnetic layer formed on a first surface of the ferroelectric layer; a generation terminal, a control terminal and a detection terminal formed on the magnetic layer, wherein the detection terminal is made of heavy metal material; a bottom electrode formed on a second surface of the ferroelectric layer, wherein the second surface is arranged opposite to the first surface; the generation terminal is further configured to generate magnons in the magnetic layer through thermal effect after a current is input; the detection terminal is further configured to convert the magnons in the magnetic layer into charge current by using the strong spin-orbit coupling effect; the ferroelectric layer is further configured to change the non-volatile polarization and the non-volatile strain state when a voltage pulse applied between the control terminal and the bottom electrode exceeds a critical value, and then affect the transmission ability of the magnons in the magnetic layer through the magnetoelectric coupling effect between the ferroelectric layer and the magnetic layer; the detection terminal is further configured to have a regular hysteresis change behavior of a detected voltage signal with the change of the voltage pulse; the generation terminal is made of heavy metal material; the generation terminal is further configured to generate spin current by using the strong spin-orbit coupling effect after the current is input, and the spin current is converted into magnons after being injected into the magnetic layer; the control terminal is made of heavy metal material; the ferroelectric layer is a ferroelectric substrate, a ferroelectric film or a ferroelectric sheet; the material of the ferroelectric layer is any one of lead magnesium niobate-lead titanate, lead zirconate titanate, barium titanate, potassium dihydrogen phosphate, lead titanate and lead tungstate; the ferroelectric layer is a ferroelectric film or a ferroelectric sheet with a thickness of 1 nanometer to 2 millimeters; the ferroelectric layer is lead magnesium niobate-lead titanate; the magnetic layer is made of magnetic insulator material, wherein the magnetic insulator material comprises yttrium iron garnet ferrite, ferric oxide and chromium trioxide; the thickness of the magnetic layer is 1 nanometer to 100 micrometers; the magnetic layer is made of yttrium iron garnet ferrite material; the thickness of the magnetic layer is 100+ / -50 nanometers; the bottom electrode is located directly below the control terminal and covers the control terminal, and is made of conductive material, wherein the conductive material comprises at least one of platinum, gold, palladium, tungsten, tantalum, silver, copper, aluminum, titanium, silicon, gallium arsenide, gallium nitride and titanium dioxide; the voltage-controlled three-terminal magnonic transistor according to any one of claims 1 to 9, comprising: inputting direct current or low-frequency alternating current into the generation terminal; a method for preparing the voltage-controlled three-terminal magnonic transistor according to any one of claims 1 to 9, comprising: providing a ferroelectric substrate or preparing a ferroelectric film as the ferroelectric layer; growing a magnetic layer film on a first surface of the ferroelectric layer by using a thin film growth technology; making the generation terminal, the control terminal and the detection terminal arranged side by side in sequence on the magnetic layer film by using ultraviolet lithography, electron beam exposure technology or etching technology and plating technology; and finally growing a bottom electrode on a second surface of the ferroelectric layer. ​ ​ ​ ​ ​ ​ ​ ​ 2. The three-terminal magnetic nanotransistor of claim 1, wherein, ​ 3. The three-terminal magnetic nanotransistor of claim 2, wherein, ​ 4. The three-terminal magnetic nanotransistor according to any one of claims 1 to 3, wherein ​ 5. The three-terminal magnetic nanotransistor of claim 4, wherein, ​ 6. The three-terminal magnetic nanotransistor according to any one of claims 1 to 3, wherein ​ 7. The three-terminal magnetic nanotransistor of claim 6, wherein the magnetic barrier layer is a magnetic tunnel barrier layer. ​ 8. The three-terminal magnetic nanotransistor of claim 6, wherein, ​ 9. The three-terminal magnetic nanotransistor according to any one of claims 1 to 3, wherein, ​ 10. A method of controlling a three-terminal magnetic nanotransistor, characterized by, ​ ​ a voltage pulse between the control terminal and the bottom electrode V g1 to V g1 a voltage pulse between the control terminal and the bottom electrode V g , the transport ability of the magnon in the magnetic insulating layer becomes stronger, and the voltage signal of the detection terminal becomes larger; when a voltage pulse between the control terminal and the bottom electrode V g is greater than a positive critical value V t , the transport ability of the magnon in the magnetic insulating layer becomes weaker, and the voltage signal of the detection terminal becomes smaller, thereby realizing a regular hysteresis change behavior of the voltage signal of the detection terminal with the change of the voltage pulse V g1 to V g1 a voltage pulse between the control terminal and the bottom electrode V g , the transport ability of the magnon in the magnetic insulating layer becomes weaker, and the voltage signal of the detection terminal becomes smaller, thereby realizing a regular hysteresis change behavior of the voltage signal of the detection terminal with the change of the voltage pulse V g V t is less than a negative critical value V The application relates to a voltage-controlled three-terminal magnonic transistor, comprising: a ferroelectric layer; a magnetic layer formed on a first surface of the ferroelectric layer; a generation terminal, a control terminal and a detection terminal formed on the magnetic layer, wherein the detection terminal is made of heavy metal material; a bottom electrode formed on a second surface of the ferroelectric layer, wherein the second surface is arranged opposite to the first surface; the generation terminal is further configured to generate magnons in the magnetic layer through thermal effect after a current is input; the detection terminal is further configured to convert the magnons in the magnetic layer into charge current by using the strong spin-orbit coupling effect; the ferroelectric layer is further configured to change the non-volatile polarization and the non-volatile strain state when a voltage pulse applied between the control terminal and the bottom electrode exceeds a critical value, and then affect the transmission ability of the magnons in the magnetic layer through the magnetoelectric coupling effect between the ferroelectric layer and the magnetic layer; the detection terminal is further configured to have a regular hysteresis change behavior of a detected voltage signal with the change of the voltage pulse; the generation terminal is made of heavy metal material; the generation terminal is further configured to generate spin current by using the strong spin-orbit coupling effect after the current is input, and the spin current is converted into magnons after being injected into the magnetic layer; the control terminal is made of heavy metal material; the ferroelectric layer is a ferroelectric substrate, a ferroelectric film or a ferroelectric sheet; the material of the ferroelectric layer is any one of lead magnesium niobate-lead titanate, lead zirconate titanate, barium titanate, potassium dihydrogen phosphate, lead titanate and lead tungstate; the ferroelectric layer is a ferroelectric film or a ferroelectric sheet with a thickness of 1 nanometer to 2 millimeters; the ferroelectric layer is lead magnesium niobate-lead titanate; the magnetic layer is made of magnetic insulator material, wherein the magnetic insulator material comprises yttrium iron garnet ferrite, ferric oxide and chromium trioxide; the thickness of the magnetic layer is 1 nanometer to 100 micrometers; the magnetic layer is made of yttrium iron garnet ferrite material; the thickness of the magnetic layer is 100+ / -50 nanometers; the bottom electrode is located directly below the control terminal and covers the control terminal, and is made of conductive material, wherein the conductive material comprises at least one of platinum, gold, palladium, tungsten, tantalum, silver, copper, aluminum, titanium, silicon, gallium arsenide, gallium nitride and titanium dioxide; the voltage-controlled three-terminal magnonic transistor according to any one of claims 1 to 9, comprising: inputting direct current or low-frequency alternating current into the generation terminal; a method for preparing the voltage-controlled three-terminal magnonic transistor according to any one of claims 1 to 9, comprising: providing a ferroelectric substrate or preparing a ferroelectric film as the ferroelectric layer; growing a magnetic layer film on a first surface of the ferroelectric layer by using a thin film growth technology; making the generation terminal, the control terminal and the detection terminal arranged side by side in sequence on the magnetic layer film by using ultraviolet lithography, electron beam exposure technology or etching technology and plating technology; and finally growing a bottom electrode on a second surface of the ferroelectric layer. , the transport ability of the magnon in the magnetic insulating layer becomes weaker, and the voltage signal of the detection terminal becomes smaller, thereby realizing a regular hysteresis change behavior of the voltage signal of the detection terminal with the change of the voltage pulse​​ 11. A method of fabricating a three-terminal magnetic nanotransistor, comprising: ​ ​ ​ ​ ​

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