Plasma processing apparatus

Abstract

To provide a technique for controlling energy of ions colliding with a substrate by a voltage pulse applied to a bias electrode.SOLUTION: The disclosed plasma processing apparatus includes a chamber, a substrate support, a plasma generator, and a bias power supply. The substrate support includes a bias electrode and is provided in the chamber. The plasma generating unit is configured to generate plasma from a gas in the chamber. The biasing power supply is electrically connected to the biasing electrode and configured to generate a sequence of a plurality of voltage pulses. Each of the plurality of voltage pulses has a leading edge period transitioning from a reference voltage level to a pulse voltage level and a trailing edge period transitioning from the pulse voltage level to the reference voltage level. At least one of the time length of the leading edge period and the time length of the trailing edge period is longer than 0 seconds and equal to or shorter than 0.5 μ seconds.SELECTED DRAWING: Figure 1

Description

[Technical Field]

[0001] SUMMARY OF THE INVENTION Exemplary embodiments of the present disclosure relate to a plasma processing apparatus and a plasma processing method. [Background technology]

[0002] A plasma processing apparatus is used for plasma processing of a substrate. The plasma processing apparatus includes a chamber and a substrate holding electrode. The substrate holding electrode is provided in the chamber. The substrate holding electrode holds a substrate placed on its main surface. One type of such plasma processing apparatus is described in Japanese Patent Laid-Open Publication No. 2009-187975 (hereinafter referred to as "Patent Document 1").

[0003] The plasma processing apparatus described in Patent Document 1 further includes a radio frequency generator and a DC negative pulse generator. The radio frequency generator applies a radio frequency voltage to a substrate holding electrode. In the plasma processing apparatus described in Patent Document 1, the radio frequency voltage is alternately switched on and off. In addition, in the plasma processing apparatus described in Patent Document 1, a DC negative pulse voltage is applied to the substrate holding electrode from the DC negative pulse generator in accordance with the timing of the radio frequency voltage being turned on and off. [Prior art documents] [Patent documents]

[0004] [Patent Document 1] Japanese Patent Application Laid-Open No. 2009-187975 Summary of the Invention [Problem to be solved by the invention]

[0005] The present disclosure provides a technique for controlling the energy of ions impinging on a substrate by means of a voltage pulse applied to a bias electrode. [Means for solving the problem]

[0006] In one exemplary embodiment, a plasma processing apparatus is provided. The plasma processing apparatus includes a chamber, a substrate support, a plasma generating unit, and a bias power supply. The substrate support includes a bias electrode and is disposed within the chamber. The plasma generating unit is configured to generate plasma from a gas within the chamber. The bias power supply is electrically connected to the bias electrode and configured to generate a sequence of voltage pulses applied to the bias electrode. Each of the voltage pulses has a leading edge period during which the voltage pulses transition from a reference voltage level to a pulse voltage level, and a trailing edge period during which the voltage pulses transition from the pulse voltage level to the reference voltage level. At least one of the duration of the leading edge period and the duration of the trailing edge period is greater than 0 seconds and less than or equal to 0.5 microseconds. [Effects of the Invention]

[0007] According to one exemplary embodiment, the energy of ions striking the substrate can be controlled by voltage pulses applied to the bias electrode. [Brief explanation of the drawings]

[0008] [Figure 1] 1 is a diagram illustrating a schematic diagram of a plasma processing apparatus according to an exemplary embodiment; [Figure 2] FIG. 2 is a diagram showing an example of a waveform of an output voltage of a bias power supply in a plasma processing apparatus according to an exemplary embodiment. [Figure 3] FIG. 1 is a diagram illustrating a bias power supply in a plasma processing apparatus according to an exemplary embodiment. [Figure 4] 1 is a flow diagram of a plasma processing method according to an exemplary embodiment. [Figure 5] 10 is a graph showing the results of a first simulation. [Figure 6] 10 is a graph showing the results of a second simulation. [Figure 7] 10 is a graph showing the results of a third simulation. [Figure 8]FIG. 10 is a diagram showing another example of a waveform of an output voltage of a bias power supply in a plasma processing apparatus according to an exemplary embodiment. DETAILED DESCRIPTION OF THE INVENTION

[0009] Various exemplary embodiments are described below.

[0010] In one exemplary embodiment, a plasma processing apparatus is provided. The plasma processing apparatus includes a chamber, a substrate support, a plasma generating unit, and a bias power supply. The substrate support includes a bias electrode and is disposed within the chamber. The plasma generating unit is configured to generate plasma from a gas within the chamber. The bias power supply is electrically connected to the bias electrode and configured to generate a sequence of voltage pulses applied to the bias electrode. Each of the voltage pulses has a leading edge period during which the voltage pulses transition from a reference voltage level to a pulse voltage level, and a trailing edge period during which the voltage pulses transition from the pulse voltage level to the reference voltage level. At least one of the duration of the leading edge period and the duration of the trailing edge period is greater than 0 seconds and less than or equal to 0.5 microseconds.

[0011] If the voltage pulse applied to the bias electrode is a perfect rectangular pulse, it is possible to control the energy of the ions impinging on the substrate, but this comes at a high cost.The negative voltage pulse having at least one of the leading edge period and the trailing edge period described above allows the energy of the ions impinging on the substrate to be controlled in the same way as when a perfect rectangular pulse is used.

[0012] In one exemplary embodiment, at least one of the duration of the leading edge period and the duration of the trailing edge period may be greater than 0 seconds and less than or equal to 0.25 μsec. In one exemplary embodiment, at least one of the duration of the leading edge period and the duration of the trailing edge period may be greater than or equal to 0.05 μsec.

[0013] In one exemplary embodiment, the pulse voltage level may be greater than or equal to -20 kV and less than or equal to -0.5 kV. In one exemplary embodiment, the reference voltage level may be 0V.

[0014] In one exemplary embodiment, the bias power supply may be configured to periodically apply a plurality of pulses of voltage to the bias electrode.

[0015] In one exemplary embodiment, the bias power supply may include a DC power supply and a pulse unit. The pulse unit is provided between the DC power supply and the bias electrode. The pulse unit includes a first switching element, a second switching element, and an impedance circuit. The first switching element and the second switching element are connected in series between the positive and negative poles of the DC power supply. The impedance circuit is connected between a node between the first switching element and the second switching element and the bias electrode.

[0016] In one exemplary embodiment, the plasma processing apparatus may further include a pulse controller configured to control the pulse unit, wherein the pulse controller is configured to alternately perform a first control of closing the first switching element and opening the second switching element and a second control of opening the first switching element and closing the second switching element.

[0017] In one exemplary embodiment, the impedance circuit may include an inductor and a resistive element connected in series between the node and the bias electrode.

[0018] In one exemplary embodiment, the plasma generating unit may include a high frequency power source.

[0019] In another exemplary embodiment, a plasma processing method is provided. The plasma processing method includes providing a substrate on a substrate support in a chamber of a plasma processing apparatus. The plasma processing method further includes generating a plasma in the chamber. The plasma processing method further includes applying a sequence of voltage pulses to the substrate support while the plasma is generated in the chamber. Each of the voltage pulses has a leading edge period during which the voltage pulses transition from a reference voltage level to a pulse voltage level and a trailing edge period during which the voltage pulses transition from the pulse voltage level to the reference voltage level. At least one of the leading edge period and the trailing edge period has a duration greater than 0 seconds and less than or equal to 0.5 microseconds.

[0020] In yet another exemplary embodiment, a plasma processing apparatus is provided. The plasma processing apparatus includes a chamber, a substrate support, a plasma generating unit, and a bias power supply. The substrate support includes a bias electrode and is disposed within the chamber. The plasma generating unit is configured to generate plasma from a gas within the chamber. The bias power supply is electrically connected to the bias electrode and configured to generate a sequence of a plurality of voltage pulses. The bias power supply includes a DC power supply and a pulse unit. The pulse unit is disposed between the DC power supply and the bias electrode. The pulse unit includes a first switching element, a second switching element, and an impedance circuit. The first switching element and the second switching element are connected in series between a positive electrode and a negative electrode of the DC power supply. The impedance circuit is connected between the bias electrode and a node between the first switching element and the second switching element.

[0021] In one exemplary embodiment, the plasma processing apparatus may further include a pulse controller configured to control the pulse unit, wherein the pulse controller is configured to alternately perform a first control of closing the first switching element and opening the second switching element and a second control of opening the first switching element and closing the second switching element.

[0022] In one exemplary embodiment, the impedance circuit may include an inductor and a resistive element connected in series between the node and the bias electrode.

[0023] Various exemplary embodiments will be described in detail below with reference to the drawings, in which the same or equivalent parts are designated by the same reference numerals.

[0024] FIG. 1 is a diagram schematically illustrating a plasma processing apparatus according to an exemplary embodiment. The plasma processing apparatus 1 illustrated in FIG. 1 is a capacitively coupled plasma processing apparatus. The plasma processing apparatus 1 includes a chamber 10. The chamber 10 provides an internal space 10s therein. The central axis of the chamber 10 is an axis AX, which extends in the vertical direction.

[0025] In one embodiment, the chamber 10 may include a chamber body 12. The chamber body 12 has a substantially cylindrical shape. An internal space 10s is provided within the chamber body 12. The chamber body 12 is made of, for example, aluminum. The chamber body 12 is electrically grounded. A plasma-resistant film may be formed on the inner wall surface of the chamber body 12, i.e., the wall surface defining the internal space 10s. This film may be a film formed by anodizing or a ceramic film such as a film formed from yttrium oxide.

[0026] The chamber body 12 may have a passage 12p in its sidewall. The substrate W passes through the passage 12p when being transferred between the internal space 10s and the outside of the chamber 10. A gate valve 12g is provided along the sidewall of the chamber body 12 to open and close the passage 12p.

[0027] The plasma processing apparatus 1 further includes a substrate support 16. The substrate support 16 is configured to support a substrate W placed thereon in the chamber 10. The substrate W has a substantially disk shape. The substrate support 16 may be supported by a support 15. The support 15 extends upward from the bottom of the chamber body 12. The support 15 has a substantially cylindrical shape. The support 15 is made of an insulating material such as quartz.

[0028] The substrate support 16 has a lower electrode 18. The substrate support 16 may further have an electrostatic chuck 20. The substrate support 16 may further have an electrode plate 19. The electrode plate 19 is made of a conductive material such as aluminum and has a substantially disc shape. The lower electrode 18 is provided on the electrode plate 19. The lower electrode 18 is made of a conductive material such as aluminum and has a substantially disc shape. The lower electrode 18 is electrically connected to the electrode plate 19. The central axes of the lower electrode 18 and the electrode plate 19 substantially coincide with the axis AX.

[0029] The lower electrode 18 may have a flow path 18f therein. The flow path 18f is a flow path for a heat exchange medium. For example, a refrigerant is used as the heat exchange medium. The flow path 18f receives the heat exchange medium supplied from a supply device (e.g., a chiller unit) via a pipe 23a. The supply device is provided outside the chamber 10. The heat exchange medium from the supply device flows through the flow path 18f and is returned to the supply device via a pipe 23b.

[0030] The electrostatic chuck 20 is provided on the lower electrode 18. When the substrate W is processed in the internal space 10s, it is placed on the electrostatic chuck 20 so that its center is positioned on the axis AX. The electrostatic chuck 20 is configured to hold the substrate. The electrostatic chuck 20 has a body and an electrode (chuck electrode). The body of the electrostatic chuck 20 is formed from a dielectric material such as aluminum oxide or aluminum nitride. The body of the electrostatic chuck 20 has a substantially disk shape. The central axis of the electrostatic chuck 20 substantially coincides with the axis AX.

[0031] The electrode of the electrostatic chuck 20 is provided within the body of the electrostatic chuck 20. The electrode of the electrostatic chuck 20 is a film formed from a conductor. A DC power supply is electrically connected to the electrode of the electrostatic chuck 20. When a DC voltage is applied from the DC power supply to the electrode of the electrostatic chuck 20, an electrostatic attractive force is generated between the electrostatic chuck 20 and the substrate W. The generated electrostatic attractive force attracts the substrate W to the electrostatic chuck 20 and the substrate W is held by the electrostatic chuck 20.

[0032] The substrate support 16 may further support an edge ring ER mounted thereon. The edge ring ER has an annular shape and is made of, for example, silicon or silicon carbide. The edge ring ER is mounted on the substrate support 16 so that its central axis is aligned with the axis AX. In one embodiment, the edge ring ER may be partially mounted on the electrostatic chuck 20. Note that the substrate W is placed on the electrostatic chuck 20 and within a region surrounded by the edge ring ER.

[0033] The plasma processing apparatus 1 may further include a gas supply line 25. The gas supply line 25 supplies a heat transfer gas, such as He gas, from a gas supply mechanism to the gap between the upper surface of the electrostatic chuck 20 and the rear surface (lower surface) of the substrate W.

[0034] The plasma processing apparatus 1 may further include a cylindrical portion 28 and an insulating portion 29. The cylindrical portion 28 extends upward from the bottom of the chamber body 12. The cylindrical portion 28 extends along the outer periphery of the support 15. The cylindrical portion 28 is made of a conductive material and has a substantially cylindrical shape. The cylindrical portion 28 is electrically grounded. The insulating portion 29 is provided on the cylindrical portion 28. The insulating portion 29 is made of an insulating material. The insulating portion 29 is made of a ceramic such as quartz. The insulating portion 29 has a substantially cylindrical shape. The insulating portion 29 extends along the outer periphery of the electrode plate 19, the outer periphery of the lower electrode 18, and the outer periphery of the electrostatic chuck 20.

[0035] The plasma processing apparatus 1 further includes an upper electrode 30. The upper electrode 30 is provided above the substrate support 16. The upper electrode 30 closes the upper opening of the chamber body 12 together with a member 32. The member 32 is made of an insulating material. The upper electrode 30 is supported on the upper part of the chamber body 12 via this member 32.

[0036] The upper electrode 30 may include a top plate 34 and a support 36. The lower surface of the top plate 34 defines an internal space 10s. A plurality of gas holes 34a are formed in the top plate 34. The plurality of gas holes 34a penetrate the top plate 34 in the thickness direction (vertical direction). The top plate 34 is made of, for example, silicon. Alternatively, the top plate 34 may have a structure in which a plasma-resistant film is provided on the surface of an aluminum member. This film may be a ceramic film, such as a film formed by anodizing or a film formed from yttrium oxide.

[0037] The support 36 detachably supports the top plate 34. The support 36 is made of a conductive material such as aluminum. A gas diffusion chamber 36a is provided inside the support 36. A plurality of gas holes 36b extend downward from the gas diffusion chamber 36a. The plurality of gas holes 36b are respectively connected to the plurality of gas holes 34a. A gas introduction port 36c is formed in the support 36. The gas introduction port 36c is connected to the gas diffusion chamber 36a. A gas supply pipe 38 is connected to the gas introduction port 36c.

[0038] A gas source group 40 is connected to the gas supply pipe 38 via a valve group 41, a flow rate controller group 42, and a valve group 43. The gas source group 40, the valve group 41, the flow rate controller group 42, and the valve group 43 constitute a gas supply unit. The gas source group 40 includes a plurality of gas sources. Each of the valve group 41 and the valve group 43 includes a plurality of valves (e.g., on-off valves). The flow rate controller group 42 includes a plurality of flow rate controllers. Each of the plurality of flow rate controllers in the flow rate controller group 42 is a mass flow controller or a pressure-controlled flow rate controller. Each of the plurality of gas sources in the gas source group 40 is connected to the gas supply pipe 38 via a corresponding valve in the valve group 41, a corresponding flow rate controller in the flow rate controller group 42, and a corresponding valve in the valve group 43. The plasma processing apparatus 1 can supply gas from one or more selected gas sources of the gas source group 40 to the internal space 10s at individually adjusted flow rates.

[0039] The plasma processing apparatus 1 may further include a baffle member 48. The baffle member 48 is provided between the cylindrical portion 28 and the sidewall of the chamber body 12. The baffle member 48 may be a plate-shaped member. The baffle member 48 may be formed, for example, by coating an aluminum plate with a ceramic such as yttrium oxide. The baffle member 48 has a plurality of through-holes. Below the baffle member 48, an exhaust pipe 52 is connected to the bottom of the chamber body 12. An exhaust device 50 is connected to the exhaust pipe 52. The exhaust device 50 has a pressure controller such as an automatic pressure control valve and a vacuum pump such as a turbomolecular pump, and is capable of reducing the pressure in the internal space 10s.

[0040] The plasma processing apparatus 1 further includes a high-frequency power supply 61. The high-frequency power supply 61 is a power supply that generates high-frequency power for generating plasma. The high-frequency power supply 61 constitutes a plasma generating unit in one embodiment. The frequency of the high-frequency power may be within a range of 27 MHz to 100 MHz, for example, 40 MHz or 60 MHz. The high-frequency power supply 61 is connected to the lower electrode 18 via a matching device 61m and an electrode plate 19. The matching device 61m has a matching circuit for matching the impedance of the load side (lower electrode 18 side) of the high-frequency power supply 61 to the output impedance of the high-frequency power supply 61. Note that the high-frequency power supply 61 does not necessarily have to be electrically connected to the lower electrode 18, and may be connected to the upper electrode 30 via the matching device 61m.

[0041] In the plasma processing apparatus 1, a gas is supplied from a gas supply unit to the internal space 10s. Then, high-frequency power is supplied from the high-frequency power supply 61, thereby exciting the gas in the internal space 10s. As a result, plasma is generated in the internal space 10s. The substrate W is processed by chemical species such as ions and / or radicals from the plasma.

[0042] The plasma processing apparatus 1 further includes a bias power supply 70. The bias power supply 70 is electrically connected to the bias electrode. In the example shown in FIG. 1, the lower electrode 18 is used as the bias electrode, and the bias power supply 70 is electrically connected to the lower electrode 18. Hereinafter, reference will be made to FIG. 2 in addition to FIG. 1. FIG. 2 is a diagram showing an example of a waveform of an output voltage of a bias power supply in a plasma processing apparatus according to an exemplary embodiment. The bias power supply 70 is configured to generate a sequence of multiple voltage pulses NP as shown in FIG. 2. The bias power supply 70 is configured to apply the sequence of multiple voltage pulses NP to the bias electrode (in one example, the lower electrode 18). In one embodiment, the bias power supply 70 is configured to periodically apply the voltage pulses NP to the bias electrode (in one example, the lower electrode 18). The time interval (i.e., period) at which the voltage pulses NP are applied to the bias electrode has a time length that is the reciprocal of the bias frequency. The bias frequency that defines the period at which the voltage pulses NP are applied to the bias electrode can be a frequency of 1 kHz or more and 27 MHz or less, for example, 400 kHz.

[0043] In the plasma processing apparatus 1, the energy of ions colliding from the plasma with the substrate W is adjusted according to the magnitude of the absolute value of the negative potential of the substrate, which is set in response to the application of the voltage pulse NP to the bias electrode. In one embodiment, each of the multiple voltage pulses NP may be a negative voltage pulse. In this case, the energy of ions colliding from the plasma with the substrate W is adjusted according to the magnitude of the absolute value of the voltage level of the voltage pulse NP.

[0044] As shown in FIG. 2 , the voltage pulse NP is a pulse having a leading edge LE and a trailing edge TE. The voltage level of the voltage pulse NP changes from a reference voltage level LV to a pulse voltage level NV at the leading edge LE. The voltage level of the voltage pulse NP changes from the pulse voltage level NV to the reference voltage level LV at the trailing edge TE. The pulse voltage level NV is the voltage level (e.g., a negative voltage level) of the voltage pulse NP in a steady state. If the voltage pulse NP does not have a steady state, such as a triangular wave, the pulse voltage level NV may be a negative voltage level having the maximum absolute value of the voltage pulse NP. The pulse voltage level NV may be greater than or equal to −20 kV and less than or equal to −0.5 kV. That is, the absolute value of the pulse voltage level NV may be greater than or equal to 0.5 kV and less than or equal to 20 kV. The reference voltage level LV is the level of the output voltage of the bias power supply 70 when the voltage pulse NP is not being output. The reference voltage level LV may be 0 V. The reference voltage level LV may be a negative voltage level having an absolute value smaller than that of the pulse voltage level NV. Alternatively, the reference voltage level LV may be a positive voltage level.

[0045] The start time of the leading edge LE is defined as the start time of output of the voltage pulse NP by the bias power supply 70. The end time of the leading edge LE is defined as the time of the inflection point where the output voltage of the bias power supply 70 changes from the waveform of the leading edge LE to the waveform immediately after the leading edge LE (the waveform of the pulse voltage level NV). Note that if the voltage pulse NP does not have a steady state like a triangular wave, the end time of the leading edge LE may be the time when the negative voltage with the maximum absolute value occurs in the voltage pulse NP.

[0046] The start of the trailing edge TE is defined as the point of inflection at which the output voltage of the bias power supply 70 changes from the waveform immediately before the trailing edge TE (the waveform of the pulse voltage level NV) to the waveform of the trailing edge TE. If the voltage pulse NP does not have a steady state, such as a triangular wave, the start of the trailing edge TE may be the point at which the negative voltage with the maximum absolute value occurs in the voltage pulse NP. The end of the trailing edge TE is defined as the end of the output of the voltage pulse NP by the bias power supply 70.

[0047] In the voltage pulse NP output by the bias power supply 70, at least one of the duration of the leading edge LE (i.e., the leading edge duration TLE) and the duration of the trailing edge TE (i.e., the trailing edge duration TTE) is greater than 0 seconds and less than or equal to 0.5 μsec. In one embodiment, at least one of the duration of the leading edge duration TLE and the trailing edge duration TTE may be greater than 0 seconds and less than or equal to 0.25 μsec. In one embodiment, at least one of the duration of the leading edge duration TLE and the trailing edge duration TTE may be greater than or equal to 0.05 μsec. In one embodiment, in the voltage pulse NP output by the bias power supply 70, the duration of the leading edge duration TLE and the trailing edge duration TTE may be greater than or equal to 0.05 μsec and less than or equal to 0.5 μsec. The absolute value of the gradient of the voltage change over time at the leading edge LE may be 1 kV / μsec (=|-0.5 kV / 0.5 μsec|) or more and 400 kV / μsec (=|-20 kV / 0.05 μsec|) or less. The gradient of the voltage change over time at the trailing edge TE may be 1 kV / μsec or more and 400 kV / μsec or less.

[0048] The plasma processing apparatus 1 may further include a control unit MC. The control unit MC is a computer including a processor, a storage device, an input device, a display device, etc., and controls each unit of the plasma processing apparatus 1. Specifically, the control unit MC executes a control program stored in the storage device and controls each unit of the plasma processing apparatus 1 based on recipe data stored in the storage device. Under the control of the control unit MC, a process specified by the recipe data is executed in the plasma processing apparatus 1. A plasma processing method according to an exemplary embodiment described below can be executed in the plasma processing apparatus 1 under the control of each unit of the plasma processing apparatus 1 by the control unit MC.

[0049] Reference will now be made to FIG. 3. FIG. 3 is a diagram illustrating a bias power supply in a plasma processing apparatus according to an exemplary embodiment. As shown in FIGS. 1 and 3, in one embodiment, the bias power supply 70 may be connected to the bias electrode (in one example, the lower electrode 18) via a filter 70f. The filter 70f blocks or reduces high-frequency power directed to the bias power supply 70. In one embodiment, the filter 70f may include an inductor 70fa and a capacitor 70fb. The inductor 70fa is connected between the bias electrode (in the example of FIG. 1, the lower electrode 18) and the bias power supply 70 (or its output terminal 72). The capacitor 70fb is connected between a node between the bias power supply 70 (or its output terminal 72) and the inductor 70fa and ground.

[0050] As shown in FIG. 3 , in one embodiment, the bias power supply 70 may include a DC power supply 71 and a pulse unit 73. The bias power supply 70 may further include an output terminal 72 and a pulse controller 74. The DC power supply 71 is a power supply that generates a DC voltage. The DC voltage generated by the DC power supply 71 may be a negative DC voltage. The DC power supply 71 may be a variable DC power supply. The DC power supply 71 may be controlled by a control unit MC. In the bias power supply 70, a voltage pulse NP is output from the output terminal 72.

[0051] The pulse unit 73 is provided between the DC power supply 71 and the output terminal 72 (or bias electrode). The pulse unit 73 is configured to generate a voltage pulse NP from a DC voltage generated by the DC power supply 71. The pulse unit 73 includes a first switching element 731, a second switching element 732, and an impedance circuit 75. The pulse unit 73 may further include a capacitor 733, a diode 734, and a diode 735.

[0052] The first switching element 731 and the second switching element 732 are connected in series between the positive and negative electrodes of the DC power supply 71. Each of the first switching element 731 and the second switching element 732 includes first and second terminals and a control terminal. The first terminal of the first switching element 731 is connected to the positive electrode of the DC power supply 71. The second terminal of the first switching element 731 is connected to the first terminal of the second switching element 732. The second terminal of the second switching element 732 is connected to the negative electrode of the DC power supply 71. When a voltage is applied to the control terminal of each of the first switching element 731 and the second switching element 732 is applied to close the first and second terminals of the first switching element 731 and the second switching element 732, the first and second terminals of the first switching element 731 and the second switching element 732 are electrically connected to each other. When a voltage is applied to the control terminal of each of the first switching element 731 and the second switching element 732 is applied to open the first and second terminals of the first switching element 731 and the second switching element 732, the first and second terminals of the first switching element 731 and the second switching element 732 are electrically connected to each other.

[0053] The capacitor 733 is connected in parallel with the series circuit including the first switching element 731 and the second switching element 732 between the positive and negative electrodes of the DC power supply 71. The cathode of the diode 734 is connected to the positive electrode of the DC power supply 71 and a first terminal of the first switching element 731. The anode of the diode 734 and the cathode of the diode 735 are connected to a node 73b. The node 73b is connected to a node 73a between the first switching element 731 and the second switching element 732. The anode of the diode 735 is connected to the negative electrode of the DC power supply 71 and a second terminal of the second switching element 732.

[0054] The impedance circuit 75 is connected between the node 73a (or node 73b) and the output terminal 72 (or bias electrode). In one embodiment, the impedance circuit 75 may include an inductor 751 and a resistive element 752. The inductor 751 and the resistive element 752 are connected in series between the node 73a (or node 73b) and the output terminal 72 (or bias electrode). The resistive element 752 may have a small resistance value of about several ohms.

[0055] The pulse controller 74 is configured to control the pulse unit 73. The pulse controller 74 may include a programmable processor. The pulse controller 74 is configured to alternately perform a first control and a second control. In the first control, the pulse controller 74 provides control signals to the control terminals of the first switching element 731 and the second switching element 732 to close the first switching element 731 and open the second switching element 732. As a result of the first control, the output terminal 72 is connected to the positive electrode of the DC power supply 71. In the second control, the pulse controller 74 provides control signals to the control terminals of the first switching element 731 and the second switching element 732 to open the first switching element 731 and close the second switching element 732. As a result of the second control, the output terminal 72 is connected to the negative electrode of the DC power supply 71.

[0056] The frequency that defines the period at which the voltage pulse NP is applied to the bias electrode (for example, the lower electrode 18), i.e., the bias frequency, can be specified by the control unit MC to the pulse controller 74. The proportion of the time length of the voltage pulse NP in the period, i.e., the duty ratio (%), can also be specified by the control unit MC to the pulse controller 74. The pulse controller 74 alternately executes first control and second control to periodically generate voltage pulses NP at a period (i.e., a time interval) having a time length that is the reciprocal of the specified frequency. The pulse controller 74 also adjusts the respective time lengths of the first control and the second control according to the specified duty ratio. With this bias power supply 70, it is possible to periodically apply voltage pulses NP to the bias electrode (for example, the lower electrode 18), as shown in FIG. 2 .

[0057] If the voltage pulse NP applied to the bias electrode is a perfect rectangular pulse, it is possible to control the energy of ions colliding with the substrate W, but this increases the cost. The voltage pulse NP having at least one of the leading edge duration TLE and the trailing edge duration TTE described above makes it possible to control the energy of ions colliding with the substrate W, similar to the case where a perfect rectangular pulse is used. Note that if the time length of the leading edge duration TLE and the time length of the trailing edge duration TTE are each 0.05 μsec or longer, ringing in the voltage pulse NP can be suppressed or reduced.

[0058] Hereinafter, with reference to Fig. 4, a plasma processing method according to an exemplary embodiment will be described, taking as an example a case where the method is applied to the plasma processing apparatus 1 shown in Fig. 1. Fig. 4 is a flowchart of the plasma processing method according to an exemplary embodiment.

[0059] 4 (hereinafter referred to as "method MT") starts with step STa. In step STa, a substrate W is prepared. The substrate W is placed on a substrate support 16 in a chamber 10 of the plasma processing apparatus 1.

[0060] In the subsequent step STb, plasma is generated in the chamber 10. In step STb, gas is supplied into the chamber from the gas supply unit. In step STb, the exhaust device 50 adjusts the gas pressure in the chamber 10 to a specified pressure. In step STb, plasma is generated from the gas in the chamber 10 by the plasma generation unit. In the plasma processing apparatus 1, high-frequency power is supplied from the high-frequency power supply 61 to generate plasma. In step STb, the control unit MC controls the gas supply unit, the exhaust device 50, and the plasma generation unit (high-frequency power supply 61).

[0061] The subsequent step STc is performed while plasma is being generated in the chamber 10 in step STb. In step STc, a sequence of multiple voltage pulses NP is applied from the bias power supply 70 to the bias electrode (for example, the lower electrode 18). As described above, at least one of the leading edge duration TLE and the trailing edge duration TTE of the voltage pulses NP is greater than 0 seconds and less than or equal to 0.5 μsec. In one embodiment, at least one of the leading edge duration TLE and the trailing edge duration TTE may be greater than 0 seconds and less than or equal to 0.25 μsec. In one embodiment, at least one of the leading edge duration TLE and the trailing edge duration TTE may be greater than or equal to 0.05 μsec. In one embodiment, in the voltage pulses NP output by the bias power supply 70, the leading edge duration TLE and the trailing edge duration TTE may each be greater than or equal to 0.05 μsec and less than or equal to 0.5 μsec. In step STc, the bias power supply 70 may be controlled by the controller MC.

[0062] A simulation performed to evaluate the plasma processing apparatus 1 will now be described.

[0063] (First simulation)

[0064] In the first simulation, the energy distribution (IED) of ions impinging on the substrate was determined while changing the time length of the leading edge period TLE of the voltage pulse NP applied to the lower electrode 18. The bias frequency defining the period for applying the voltage pulse NP to the lower electrode 18 was 400 kHz, and the duty ratio of the voltage pulse NP was 50%. The time lengths of the leading edge period TLE were 0 μs, 0.25 μs, 0.5 μs, 0.75 μs, 1 μs, and 1.25 μs. When the time length of the leading edge period TLE was 0 μs, the waveform of the voltage pulse NP was a perfect square wave. For reference, the energy distribution (IED) of ions impinging on the substrate was also determined when high-frequency bias power having a frequency of 400 kHz was supplied to the lower electrode 18 instead of the voltage pulse NP.

[0065] The results of the first simulation are shown in Figure 5. As shown in Figure 5, it was confirmed that the ion energy tends to decrease as the time length of the leading edge period TLE increases. However, it was confirmed that if the time length of the leading edge period TLE is 0.5 μs or less, it is possible to cause ions having approximately the same energy as the energy of ions that impinge on the substrate when a perfect square wave is used. It was also confirmed that the peak of IEDs that impinge on the substrate when the time length of the leading edge period TLE is 0.5 μs or less is significantly higher than the peak of IEDs that impinge on the substrate when high-frequency bias power (RF 400 kHz in Figure 5) is supplied.

[0066] (Second simulation)

[0067] In the second simulation, the angle distribution (IAD) of ions relative to the substrate when they collide with the substrate was determined while changing the time length of the leading edge period TLE of the voltage pulse NP applied to the lower electrode 18. The bias frequency that defines the period for applying the voltage pulse NP to the lower electrode 18 was 400 kHz, and the duty ratio of the voltage pulse NP was 50%. The time lengths of the leading edge period TLE were 0 μs, 0.25 μs, 0.5 μs, 0.75 μs, 1 μs, and 1.25 μs. For reference, the angle distribution (IAD) of ions relative to the substrate when they collide with the substrate was determined when high-frequency bias power having a frequency of 400 kHz was supplied to the lower electrode 18 instead of the voltage pulse NP.

[0068] The results of the second simulation are shown in Figure 6. Figure 6 shows that when the angle is 0°, ions collide perpendicularly with the substrate. As shown in Figure 6, it was confirmed that as the time length of the leading edge period TLE increases, the distribution of the angles at which ions collide with the substrate W tends to become larger. However, when the time length of the leading edge period TLE is 0.5 μs or less, an IAD similar to that obtained when a perfect square wave is used was obtained. In other words, it was confirmed that when the time length of the leading edge period TLE is 0.5 μs or less, ions collide almost perpendicularly with the substrate, and the distribution of the angles at which ions collide with the substrate is narrow.

[0069] (Third Simulation)

[0070] In the third simulation, the energy distribution (IED) of ions impinging on the substrate was obtained while changing the steady-state voltage level (voltage between the leading edge LE and the trailing edge TE) of the voltage pulse NP applied to the lower electrode 18. The steady-state voltage levels of the voltage pulse NP applied to the lower electrode 18 were −450 V, −900 V, and −1350 V. The bias frequency defining the period for applying the voltage pulse NP to the lower electrode 18 was 400 kHz, and the duty ratio of the voltage pulse NP was 20%. The duration of each of the leading edge period TLE and the trailing edge period TTE was 0.3 μs.

[0071] The results of the third simulation are shown in Figure 7. As shown in Figure 7, it was confirmed that the peak ion energy in the IED increases depending on the magnitude of the absolute value of the steady-state voltage level of the voltage pulse NP applied to the lower electrode 18, i.e., the bias electrode. Therefore, it was confirmed that it is possible to control the energy of ions colliding with the substrate by controlling the steady-state voltage level of the voltage pulse NP applied to the lower electrode 18.

[0072] Although various exemplary embodiments have been described above, the present invention is not limited to the above-described exemplary embodiments, and various additions, omissions, substitutions, and modifications may be made. Furthermore, elements in different embodiments may be combined to form other embodiments.

[0073] In another embodiment, a positive voltage pulse may be applied to the bias electrode. Even when a positive voltage pulse is applied to the bias electrode, the energy of the ions colliding with the substrate can be controlled by the potential difference between the bias electrode potential and the plasma potential.

[0074] 8 is a diagram showing another example of a waveform of the output voltage of the bias power supply in the plasma processing apparatus according to an exemplary embodiment. As shown in FIG. 8, each of the plurality of voltage pulses NP may transition to at least one different voltage level between the reference voltage level LV and the pulse voltage level NV during at least one of the leading edge duration TLE and the trailing edge duration TTE. During the leading edge duration TLE, the pulse unit 73 may open the first switching element 731 and the second switching element 732 to float the potential of the bias electrode for a certain period before the voltage of each of the plurality of voltage pulses NP changes from the reference voltage level LV to the pulse voltage level NV. During the trailing edge duration TTE, the pulse unit 73 may open the first switching element 731 and the second switching element 732 to float the potential of the bias electrode for a certain period before the voltage of each of the plurality of voltage pulses NP changes from the pulse voltage level NV to the reference voltage level LV.

[0075] In another embodiment, the plasma processing apparatus including the bias power supply 70 may be another type of plasma processing apparatus other than a capacitively coupled plasma processing apparatus. The other type of plasma processing apparatus may be an inductively coupled plasma processing apparatus, an electron cyclotron resonance (ECR) plasma processing apparatus, or a plasma processing apparatus that generates plasma using surface waves such as microwaves. Such other types of plasma processing apparatus may be used in the plasma processing methods according to various exemplary embodiments.

[0076] Also, in another embodiment, the bottom electrode 18 may not be used as a bias electrode, in which case the substrate support 16 may have one or more bias electrodes disposed within the body of the electrostatic chuck 20.

[0077] In one embodiment, at least one bias electrode may be provided in a first region of the electrostatic chuck 20 on which a substrate is placed. The at least one bias electrode may be provided in the first region between the chucking electrode and the lower electrode 18. Alternatively, the at least one bias electrode may be a chucking electrode of the electrostatic chuck 20. A bias power supply 70 is electrically connected to the at least one bias electrode and configured to apply a voltage pulse NP to the at least one bias electrode.

[0078] The at least one bias electrode may also extend into a second region of the electrostatic chuck 20 on which the edge ring ER is placed. Alternatively, the one or more bias electrodes may include at least one other bias electrode provided in the second region. The at least one other bias electrode may be a separate chuck electrode provided to generate an electrostatic attractive force for holding the edge ring ER, or may be an electrode provided separately from the separate chuck electrode. The separate chuck electrode may be a chuck electrode constituting a monopolar electrostatic chuck or a chuck electrode constituting a bipolar electrostatic chuck. The bias power supply 70 may be electrically connected to the at least one other bias electrode in the second region in addition to the at least one bias electrode in the first region.

[0079] From the foregoing, it will be understood that various embodiments of the present disclosure have been described herein for purposes of illustration, and that various modifications may be made without departing from the scope and spirit of the present disclosure. Accordingly, the various embodiments disclosed herein are not intended to be limiting, with the true scope and spirit being indicated by the appended claims. [Explanation of symbols]

[0080] 1...plasma processing apparatus, 10...chamber, 16...substrate support, 18...lower electrode, 61...high frequency power supply, 70...bias power supply

Claims

1. a chamber; a substrate support disposed within the chamber, the substrate support including a bias electrode; a plasma generating unit configured to generate plasma from the gas within the chamber; a bias power supply electrically connected to the bias electrode and configured to generate a sequence of a plurality of voltage pulses applied to the bias electrode; Equipped with each of the plurality of voltage pulses has a leading edge period during which a transition occurs from a reference voltage level to a pulse voltage level, and a trailing edge period during which a transition occurs from the pulse voltage level to the reference voltage level, and at least one of a time length of the leading edge period and a time length of the trailing edge period is equal to or greater than 0.05 μsec and equal to or less than 0.5 μsec; Plasma processing equipment.

2. 2. The plasma processing apparatus of claim 1, wherein at least one of the duration of the leading edge period and the duration of the trailing edge period is 0.25 [mu]sec or less.

3. 3. The plasma processing apparatus according to claim 1, wherein each of the plurality of voltage pulses transitions to at least one different voltage level between the reference voltage level and the pulse voltage level during at least one of the leading edge period and the trailing edge period.

4. 4. The plasma processing apparatus according to claim 1, wherein each of the plurality of voltage pulses is a negative voltage pulse.

5. 5. The plasma processing apparatus according to claim 4, wherein the pulse voltage level is −20 kV or more and −0.5 kV or less.

6. 6. The plasma processing apparatus according to claim 4, wherein the reference voltage level is 0V.

7. 7. The plasma processing apparatus according to claim 1, wherein the bias power supply is configured to periodically apply the plurality of voltage pulses to the bias electrode.

8. The bias power supply A DC power supply; a pulse unit provided between the DC power supply and the bias electrode; Including, The pulse unit comprises: a first switching element and a second switching element connected in series between a positive electrode and a negative electrode of the DC power supply; an impedance circuit connected between the bias electrode and a node between the first switching element and the second switching element; Including, The plasma processing apparatus according to any one of claims 1 to 7.

9. a pulse controller configured to control the pulse unit; The pulse controller is configured to alternately perform a first control of closing the first switching element and opening the second switching element and a second control of opening the first switching element and closing the second switching element. The plasma processing apparatus according to claim 8 .

10. 10. The plasma processing apparatus according to claim 8, wherein the impedance circuit includes an inductor and a resistive element connected in series between the node and the bias electrode.

11. 11. The plasma processing apparatus according to claim 1, wherein the plasma generating unit includes a high-frequency power source.

12. providing a substrate on a substrate support in a chamber of a plasma processing apparatus; generating a plasma in the chamber; applying a sequence of voltage pulses to the substrate support while the plasma is generated in the chamber; Including, each of the plurality of voltage pulses has a leading edge period during which a transition occurs from a reference voltage level to a pulse voltage level, and a trailing edge period during which a transition occurs from the pulse voltage level to the reference voltage level, and at least one of a time length of the leading edge period and a time length of the trailing edge period is equal to or greater than 0.05 μsec and equal to or less than 0.5 μsec; Plasma treatment method.

13. a chamber; a substrate support disposed within the chamber, the substrate support including a bias electrode; a plasma generating unit configured to generate plasma from the gas within the chamber; a bias power supply electrically connected to the bias electrode and configured to generate a sequence of a plurality of voltage pulses; Equipped with The bias power supply A DC power supply; a pulse unit provided between the DC power supply and the bias electrode; Including, The pulse unit comprises: a first switching element and a second switching element connected in series between a positive electrode and a negative electrode of the DC power supply; an impedance circuit connected between the bias electrode and a node between the first switching element and the second switching element; Including, each of the plurality of voltage pulses has a leading edge period during which a transition occurs from a reference voltage level to a pulse voltage level, and a trailing edge period during which a transition occurs from the pulse voltage level to the reference voltage level, and at least one of a time length of the leading edge period and a time length of the trailing edge period is equal to or greater than 0.05 μsec and equal to or less than 0.5 μsec; Plasma processing equipment.

14. a pulse controller configured to control the pulse unit; The pulse controller is configured to alternately perform a first control of closing the first switching element and opening the second switching element and a second control of opening the first switching element and closing the second switching element. The plasma processing apparatus according to claim 13 .

15. 15. The plasma processing apparatus according to claim 13, wherein the impedance circuit includes an inductor and a resistive element connected in series between the node and the bias electrode.

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