Temperature measurement compensation method and system for built-in temperature sensor of SOC chip

Abstract

The invention discloses a temperature measurement compensation method and system for a built-in temperature sensor of an SOC chip. The temperature measurement compensation method comprises the steps that the working current I of the SOC chip and the temperature measurement value M of the built-in temperature sensor of the SOC chip are acquired; calculating the self-heating temperature rise delta T = f (I, M) of the SOC chip according to a self-heating temperature rise compensation model; delta T = f (I, M) is a self-heating temperature rise compensation model function expression; the compensated environment temperature value T is equal to M-delta T. According to the method, a temperature measurement value obtained by a built-in temperature sensor of the SOC chip is compensated, so that the temperature sensor in the chip accurately measures the ambient temperature outside the chip.

Description

Technical Field

[0001] The invention relates to a temperature measurement compensation method and system for a temperature sensor built into a SOC chip, belonging to the technical field of chips. Background Art

[0002] Temperature sensors are usually built into SOC chips to sense the ambient temperature, so as to compensate for the impact of temperature changes in the system equipment. For example, the timing accuracy of a real-time clock system using a 32768 crystal requires accurate temperature measurement to correct the impact of crystal temperature on frequency changes. However, in a large number of engineering and product development practices, the temperature sensors built into non-ultra-low power SOC chips have obvious deficiencies in temperature measurement accuracy, consistency, and stability. This results in the built-in temperature sensors in SOC chips being unable to meet specific product development requirements, and it is necessary to improve and enhance the measurement accuracy of its built-in temperature sensors.

[0003] The temperature sensor built into the SOC is completely encapsulated inside the chip together with the other functional module circuits of the chip, which makes it difficult for external heat to reach the vicinity of the temperature sensor, and the heat generated by the operation of the internal circuit of the chip is also difficult to dissipate. Among them, internal heat conduction is mainly the hysteresis of ambient temperature measurement, which is negligible for scenarios where the temperature changes slowly. The temperature measurement accuracy of the built-in temperature sensor of the ultra-low power SOC chip using the same package has been widely used in industrial products, so the internal heat conduction has little effect on the temperature measurement error of the built-in temperature sensor of the SOC; while external heat dissipation, that is, the heat source of the chip itself, has a greater impact on the accurate measurement of the built-in temperature sensor. However, the heat generated by chip power consumption is an inevitable product of its powerful processing and computing capabilities, and packaging is also a necessary manufacturing form of the chip, which cannot be broken through or changed. Therefore, it is necessary to compensate and calibrate the temperature measurement error caused by the heat of the chip itself. Summary of the invention

[0004] Purpose of the invention: The technical problem to be solved by the present invention is to provide a temperature measurement compensation method for a SOC chip with a built-in temperature sensor in view of the deficiencies in the prior art. The method can accurately measure the ambient temperature outside the chip through the temperature sensor inside the chip.

[0005] The present invention discloses a temperature measurement compensation method for a SOC chip built-in temperature sensor, comprising the steps of:

[0006] Obtain the SOC chip operating current I and the temperature measurement value M of the SOC chip built-in temperature sensor;

[0007] The self-heating temperature rise of the SOC chip ΔT=f(I,M) is calculated according to the self-heating temperature rise compensation model; ΔT=f(I,M) is the function expression of the self-heating temperature rise compensation model;

[0008] The compensated ambient temperature value T is: t=M-ΔT.

[0009] Specifically, obtaining the SOC chip operating current I includes:

[0010] Get the main frequency F of the SOC chip;

[0011] Search the first data table to obtain the working current I corresponding to the operating main frequency F;

[0012] The first data table is used to store the operating current values ​​of the SOC chip at different operating main frequencies.

[0013] Preferably, the method further comprises:

[0014] Collect the working data record of the SOC chip, which is the working data record of the SOC chip at the ambient temperature T i And the working current I i The temperature measurement value M of the SOC chip built-in temperature sensor i ; i = 1, 2, 3, ..., N, N is the number of work data records obtained;

[0015] Calculate the self-heating temperature rise ΔT of the SOC chip i =M i -T i ;

[0016] Use curve fitting to obtain the functional relationship between self-heating temperature rise and working current ΔT P =f P (I);

[0017] Use curve fitting to obtain the functional relationship ΔT between the self-heating temperature rise and the temperature measurement value M =f M (M);

[0018] The self-heating temperature rise compensation model function expression ΔT=f(I,M) is:

[0019] ΔT=f(I,M)=f P (I)+f M (M).

[0020] Preferably, the calculation of the SOC chip self-heating temperature rise ΔT i It is the average value of multiple measurements after the SOC chip is started:

[0021]

[0022] Where K is the test start time constant, in minutes; Δt is the test interval time constant, in minutes; M i (K+Δt×j) represents the SOC chip at ambient temperature Ti And the working current I i Under K+Δt×j minutes of startup, the temperature measurement value of the SOC chip built-in temperature sensor.

[0023] Specifically, the function relationship between self-heating temperature rise and operating current ΔT P =f P (I) is:

[0024] ΔT P =f P (I)≈0.133I;

[0025] Functional relationship between self-heating temperature rise and temperature measurement value ΔT M =f M (M) is:

[0026] ΔT m =f M (M) = 7.5 × 10 -4 M 2 -6.0×10 -2 M+7.0313.

[0027] On the other hand, the present invention also discloses a temperature measurement compensation system of a SOC chip with a built-in temperature sensor, comprising:

[0028] An acquisition module 1 is used to acquire the working current I of the SOC chip and the temperature measurement value M of the built-in temperature sensor of the SOC chip;

[0029] Self-heating temperature rise calculation module 2 calculates the self-heating temperature rise of the SOC chip ΔT=f(I,M) according to the self-heating temperature rise compensation model; ΔT=f(I,M) is the function expression of the self-heating temperature rise compensation model;

[0030] The compensation module 3 is used to calculate the compensated ambient temperature value T: T=M-ΔT.

[0031] Specifically, the acquisition module 1 acquires the SOC chip operating current I including:

[0032] Get the main frequency F of the SOC chip;

[0033] Search the first data table to obtain the working current I corresponding to the operating main frequency F;

[0034] The first data table is used to store the operating current values ​​of the SOC chip at different operating main frequencies.

[0035] Preferably, the system further comprises a self-heating temperature rise compensation model establishment module 4;

[0036] The self-heating temperature rise compensation model establishment module 4 is used to establish a self-heating temperature rise compensation model function expression, including:

[0037] Collect the working data record of the SOC chip, which is the working data record of the SOC chip at the ambient temperature T i And the working current I i The temperature measurement value M of the SOC chip built-in temperature sensor i ; i = 1, 2, 3, ..., N, N is the number of work data records obtained;

[0038] Calculate the self-heating temperature rise ΔT of the SOC chip i =M i -T i ;

[0039] Use curve fitting to obtain the functional relationship between self-heating temperature rise and working current ΔT P =f P (I);

[0040] Use curve fitting to obtain the functional relationship ΔT between the self-heating temperature rise and the temperature measurement value M =f M (M);

[0041] The self-heating temperature rise compensation model function expression ΔT=f(I,M) is:

[0042] ΔT=f(I,M)=f P (I)+f M (M).

[0043] Preferably, the calculation of the SOC chip self-heating temperature rise ΔT i It is the average value of multiple measurements after the SOC chip is started:

[0044]

[0045] Where K is the test start time constant, in minutes; Δt is the test interval time constant, in minutes; M i (K+Δt×j) represents the SOC chip at ambient temperature T i And the working current I i Under K+Δt×j minutes of startup, the temperature measurement value of the SOC chip built-in temperature sensor.

[0046] Preferably, the functional relationship between the self-heating temperature rise and the operating current ΔT P =f P (I) is:

[0047] ΔT P =f P (I)≈0.133I;

[0048] Functional relationship between self-heating temperature rise and temperature measurement value ΔTM =f M (M) is:

[0049] ΔT M =f M (M) = 7.5 × 10 -4 M 2 -6.0×10 -2 M+7.0313.

[0050] Beneficial effect: The temperature measurement compensation method of the SOC chip built-in temperature sensor disclosed by the present invention uses the control variable method to analyze the temperature rise caused by the working current and the temperature rise caused by the heat convection difficulty caused by the chip packaging, and respectively analyzes the influence of the working current and the ambient temperature on the temperature measurement error, and establishes a self-heating temperature rise compensation model, so as to compensate the temperature measurement value M of the SOC chip built-in temperature sensor, and realize that the temperature sensor inside the chip can accurately measure the ambient temperature outside the chip. BRIEF DESCRIPTION OF THE DRAWINGS

[0051] The present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments, and the above and / or other advantages of the present invention will become more clear.

[0052] Figure 1 A flow chart of the temperature measurement compensation method of the SOC chip built-in temperature sensor provided by the present invention;

[0053] Figure 2 is a functional relationship curve diagram of the self-heating temperature rise and the temperature measurement value in the embodiment of the present invention;

[0054] Figure 3 This is a schematic diagram of the composition of the temperature measurement and compensation system of the SOC chip built-in temperature sensor provided by the present invention. DETAILED DESCRIPTION

[0055] The flow chart of the temperature measurement compensation method of the SOC chip built-in temperature sensor provided by the present invention is as follows: Figure 1 As shown, the following steps are included:

[0056] S1, obtaining the working current I of the SOC chip and the temperature measurement value M of the built-in temperature sensor of the SOC chip;

[0057] There is a corresponding relationship between the chip's operating current and its operating main frequency. Usually, the chip data sheet publishes the typical values ​​of the chip's operating current at different operating main frequencies. Since the chip's operating voltage is fixed, the power consumption of the SOC chip can be calculated by determining its operating current. If the corresponding table between the operating main frequency and the operating current provided in the chip data sheet is not detailed enough, the chip can also be tested through a test program to make it work at more different main frequencies to measure the typical operating current value of the chip.

[0058] The operating current values ​​of the SOC chip at different operating main frequencies are stored in the first data table. To obtain the operating current I of the SOC chip, the steps are as follows:

[0059] Get the main frequency F of the SOC chip;

[0060] Search the first data table to obtain the working current I corresponding to the operating main frequency F;

[0061] The first data table is used to store the operating current values ​​of the SOC chip at different operating main frequencies.

[0062] S2. Calculate the self-heating temperature rise of the SOC chip ΔT=f(I,M) according to the self-heating temperature rise compensation model; ΔT=f(I,M) is the function expression of the self-heating temperature rise compensation model;

[0063] The steps to establish the self-heating temperature rise compensation model are:

[0064] Collect the working data record of the SOC chip, which is the working data record of the SOC chip at the ambient temperature T i And the working current I i The temperature measurement value M of the SOC chip built-in temperature sensor i ; i = 1, 2, 3, ..., N, N is the number of work data records obtained;

[0065] Table 1

[0066]

[0067] Table 1 is a working data record table of the SOC chip in the embodiment of the present application, which also contains a first data table storing the working current values ​​of the SOC chip at different operating main frequencies. The operating main frequencies of the SOC chip are 12MHz, 24MHz, 48MHz, 72MHz, 96MHz, 120MHz, and 176MHz, and the corresponding working currents are 13.5mA, 16mA, 19.5mA, 23mA, 30mA, 35mA, and 45mA, respectively. The operating temperature range of the chip is between [-25℃, 55℃]. This embodiment collects corresponding working data for multiple temperatures within this temperature range. Table 1 only lists the data records at the three temperatures of 24℃, -25℃, and 55℃. At each ambient temperature, the chip is operated at 7 main frequencies respectively. At each main frequency, starting from the start of the chip, the temperature measurement value of the chip's built-in temperature sensor is collected every 5 minutes, and the self-heating temperature rise at the corresponding moment is calculated. It can be seen from Table 1 that the self-heating temperature rise changes slightly with the chip running time. In order to compensate for the influence of this change, this application uses the average value of 6 self-heating temperature rises as the ambient temperature T i And the working current I i The self-heating temperature rise of SOC chip underi , that is, the first column of data on the right side of Table 1, namely:

[0068] SOC chip self-heating temperature rise ΔT i It is the average value of multiple measurements after the SOC chip is started:

[0069]

[0070] Wherein K is the test start time constant, in minutes, in this embodiment K = 5; Δt is the test interval time constant, in minutes, in this embodiment Δt = 5; M i (K+Δt×j) represents the SOC chip at ambient temperature T i And the working current I i Under K+Δt×j minutes after startup, the temperature measurement value of the built-in temperature sensor of the SOC chip, in this embodiment, j=0, 1, 2, ..., 5.

[0071] Use curve fitting to obtain the functional relationship between self-heating temperature rise and working current ΔT P =f P (I);

[0072] Use curve fitting to obtain the functional relationship ΔT between the self-heating temperature rise and the temperature measurement value M =f M (M);

[0073] The working current I i As the independent variable, ΔT i As the dependent variable, curve fitting was performed; according to the data in Table 1, ΔT P =f P (I)≈0.133I;

[0074] The temperature measurement value M i As the independent variable, ΔT i As the dependent variable, curve fitting was performed; according to the data in Table 1, ΔT M =f M (M) = 7.5 × 10 -4 M 2 -6.0×10 -2 M+7.0313. Figure 2 As shown, the horizontal axis in the figure is M i , the vertical axis is ΔT i ; The dotted line in the figure is the quadratic curve obtained by fitting, and the solid line is the data before fitting.

[0075] In this embodiment,

[0076] The function expression of the self-heating temperature rise compensation model ΔT=f(I,M) is:

[0077] ΔT=f(I,M)=f P (I)+f M (M)

[0078] S3. In this embodiment, the ambient temperature value T after compensation according to the temperature measurement value M of the built-in temperature sensor of the SOC chip is: T = M-ΔT≈M-0.133I-7.5×10 -4 M 2 +6.0×10 -2 M-7.0313.

[0079] This embodiment also provides a compensation system for implementing the temperature measurement compensation method of the SOC chip built-in temperature sensor, such as Figure 3 As shown, including:

[0080] An acquisition module 1 is used to acquire the working current I of the SOC chip and the temperature measurement value M of the built-in temperature sensor of the SOC chip;

[0081] In this embodiment, the acquisition module 1 acquires the SOC chip working current I including:

[0082] Get the main frequency F of the SOC chip;

[0083] Search the first data table to obtain the working current I corresponding to the operating main frequency F;

[0084] The first data table is used to store the operating current values ​​of the SOC chip at different operating main frequencies.

[0085] Self-heating temperature rise calculation module 2 calculates the self-heating temperature rise of the SOC chip ΔT=f(I,M) according to the self-heating temperature rise compensation model; ΔT=f(I,M) is the function expression of the self-heating temperature rise compensation model;

[0086] The compensation module 3 is used to calculate the compensated ambient temperature value T: T=M-ΔT.

[0087] The self-heating temperature rise compensation model establishment module 4 is used to establish the self-heating temperature rise compensation model function expression, including:

[0088] Collect the working data record of the SOC chip, which is the working data record of the SOC chip at the ambient temperature T i And the working current I i The temperature measurement value M of the SOC chip built-in temperature sensor i ; i = 1, 2, 3, ..., N, N is the number of work data records obtained;

[0089] Calculate the self-heating temperature rise ΔT of the SOC chip i =M i -Ti ;

[0090] Use curve fitting to obtain the functional relationship between self-heating temperature rise and working current ΔT P =f P (I);

[0091] Use curve fitting to obtain the functional relationship ΔT between the self-heating temperature rise and the temperature measurement value M =f M (M);

[0092] The self-heating temperature rise compensation model function expression ΔT=f(I,M) is:

[0093] ΔT=f(I,M)=f P (I)+f M (M).

[0094] In this embodiment, the functional relationship between the self-heating temperature rise and the working current ΔT P =f P (I) is:

[0095] ΔT P =f P (I)≈0.133I;

[0096] Functional relationship between self-heating temperature rise and temperature measurement value ΔT M =f M (M) is:

[0097] ΔT M =f M (M) = 7.5 × 10 -4 M 2 -6.0×10 -2 M+7.0313.

[0098] The present invention provides a method and idea for temperature compensation of a temperature sensor built into a SOC chip. There are many methods and approaches to implement the technical solution. The above is only a preferred embodiment of the present invention. It should be pointed out that for ordinary technicians in this technical field, several improvements and modifications can be made without departing from the principle of the present invention. These improvements and modifications should also be regarded as the protection scope of the present invention. All components not specified in this embodiment can be implemented by existing technologies.

Claims

1. A temperature measurement compensation method for a SOC chip with a built-in temperature sensor, characterized in that: Includes steps: Obtain the SOC chip operating current I and the temperature measurement value M of the SOC chip built-in temperature sensor; The self-heating temperature rise of the SOC chip ΔT=f(I,M) is calculated according to the self-heating temperature rise compensation model; ΔT=f(I,M) is the function expression of the self-heating temperature rise compensation model; The compensated ambient temperature value T is: T=M-ΔT.

2. The temperature measurement compensation method of the SOC chip built-in temperature sensor according to claim 1, characterized in that: The obtaining of the SOC chip operating current I comprises: Get the main frequency F of the SOC chip; Search the first data table to obtain the working current I corresponding to the operating main frequency F; The first data table is used to store the operating current values ​​of the SOC chip at different operating main frequencies.

3. The temperature measurement compensation method of the SOC chip built-in temperature sensor according to claim 1, characterized in that: The method further comprises: Collect the working data record of the SOC chip, which is the working data record of the SOC chip at the ambient temperature T i And the working current I i The temperature measurement value M of the SOC chip built-in temperature sensor i ; i = 1, 2, 3, ..., N, N is the number of work data records obtained; Calculate the self-heating temperature rise ΔT of the SOC chip i =M i -T i ; Use curve fitting to obtain the functional relationship between self-heating temperature rise and working current ΔT P =f P (I); Use curve fitting to obtain the functional relationship ΔT between the self-heating temperature rise and the temperature measurement value M =f M (M); The self-heating temperature rise compensation model function expression ΔT=f(I,M) is: ΔT=f(I,M)=f P (I)+f M (M)。 4. The temperature measurement compensation method of the SOC chip built-in temperature sensor according to claim 3, characterized in that: The calculation of the SOC chip self-heating temperature rise ΔT i It is the average value of multiple measurements after the SOC chip is started: Where K is the test start time constant, in minutes; Δt is the test interval time constant, in minutes; M i (K+Δt×j) represents the SOC chip at ambient temperature T i And the working current I i Under K+Δt×j minutes of startup, the temperature measurement value of the SOC chip built-in temperature sensor.

5. The temperature measurement compensation method of the SOC chip built-in temperature sensor according to claim 3, characterized in that: The function relationship between self-heating temperature rise and working current ΔT P =f P (I) is: ΔT P =f P (I)≈0.133I; Functional relationship between self-heating temperature rise and temperature measurement value ΔT M =f M (M) is: ΔT M =f M (M)=7.5×10 -4 M 2 -6.0×10 -2 M+7.0313。 6. The SOC chip has a built-in temperature sensor temperature measurement and compensation system, which is characterized by: include: An acquisition module (1) is used to acquire an operating current I of the SOC chip and a temperature measurement value M of a temperature sensor built into the SOC chip; A self-heating temperature rise calculation module (2) calculates the self-heating temperature rise of the SOC chip ΔT=f(I,M) according to a self-heating temperature rise compensation model; ΔT=f(I,M) is a function expression of the self-heating temperature rise compensation model; The compensation module (3) is used to calculate the compensated ambient temperature value T: T=M-ΔT.

7. The temperature measurement and compensation system of the SOC chip built-in temperature sensor according to claim 6, characterized in that: The acquisition module (1) acquires the SOC chip operating current I, including: Get the main frequency F of the SOC chip; Search the first data table to obtain the working current I corresponding to the operating main frequency F; The first data table is used to store the operating current values ​​of the SOC chip at different operating main frequencies.

8. The temperature measurement and compensation system of the SOC chip built-in temperature sensor according to claim 6, characterized in that: The system also includes a self-heating temperature rise compensation model establishment module (4); The self-heating temperature rise compensation model establishment module (4) is used to establish a self-heating temperature rise compensation model function expression, including: Collect the working data record of the SOC chip, which is the working data record of the SOC chip at the ambient temperature T i And the working current I i The temperature measurement value M of the SOC chip built-in temperature sensor i ; i = 1, 2, 3, ..., N, N is the number of work data records obtained; Calculate the self-heating temperature rise ΔT of the SOC chip i =M i -T i ; Use curve fitting to obtain the functional relationship between self-heating temperature rise and working current ΔT P =f P (I); Use curve fitting to obtain the functional relationship ΔT between the self-heating temperature rise and the temperature measurement value M =f M (M); The self-heating temperature rise compensation model function expression ΔT=f(I,M) is: ΔT=f(I,M)=f P (I)+f M (M)。 9. The temperature measurement and compensation system of the SOC chip built-in temperature sensor according to claim 8, characterized in that: The calculation of the SOC chip self-heating temperature rise ΔT i It is the average value of multiple measurements after the SOC chip is started: Where K is the test start time constant, in minutes; Δt is the test interval time constant, in minutes; M i (K+Δt×j) represents the SOC chip at ambient temperature T i And the working current I i Under K+Δt×j minutes of startup, the temperature measurement value of the SOC chip built-in temperature sensor.

10. The temperature measurement and compensation system of the SOC chip built-in temperature sensor according to claim 8, characterized in that: The function relationship between self-heating temperature rise and working current ΔT P =f P (I) is: ΔT P =f P (I)≈0.133I; Functional relationship between self-heating temperature rise and temperature measurement value ΔT M =f M (M) is: ΔT M =f M (M)=7.5×10 -4 M 2 -6.0×10 -2 M+7.0313。

Images