Chip bonding sheet and dicing chip bonding film

Abstract

A die bonding sheet and a dicing die bonding film are provided. This die-bonding sheet contains a thermoplastic resin as an organic component, the thermoplastic resin containing an acrylic polymer having a mass-average molecular weight of 80,000 or less, and the die-bonding sheet has a melt viscosity of 30 kPa * s or less at 80 DEG C.

Description

Technical Field

[0001] The present invention relates to a die-bonding sheet and a dicing die-bonding film. Background Art

[0002] Conventionally, it is known to use a dicing die-bonding film in order to singulate (divide) a single semiconductor wafer into a plurality of semiconductor chips (dividing pieces) (for example, Patent Document 1 listed below).

[0003] The dicing die-bonding film includes: a dicing tape having an adhesive layer laminated on a base layer; and a die-bonding sheet laminated on the adhesive layer of the dicing tape in a releasable manner.

[0004] As a method for obtaining a plurality of semiconductor chips (dices) from one semiconductor wafer using the dicing die-bonding film, for example, there can be mentioned a method according to the following procedure.

[0005] (1) After one surface of the semiconductor wafer is adhered to a wafer processing tape, the semiconductor wafer is cut in a matrix from the other surface to the one surface to a midway position in the thickness direction, that is, the semiconductor wafer is half-cut to form a plurality of grooves on the semiconductor wafer (half-cutting process).

[0006] It should be noted that the other surface of the semiconductor wafer is a circuit forming surface, and a plurality of electrodes electrically connected to other components are provided on the other surface. In addition, the half-cutting process is performed in a manner that at least one of the electrodes is arranged in each area formed by cutting into a matrix.

[0007] (2) A back grinding tape is attached to the other surface (the surface on which the plurality of grooves are formed) of the semiconductor wafer subjected to the half-cutting process, and after the wafer processing tape is peeled off from the one surface of the semiconductor wafer, the semiconductor wafer is ground from the one surface to a midway position in the thickness direction. That is, the semiconductor wafer is subjected to back grinding (back grinding step).

[0008] It should be noted that the one semiconductor wafer subjected to the backside grinding process is singulated (cut) into a plurality of semiconductor chips along the plurality of grooves.

[0009] (3) After the one surface of the one semiconductor wafer subjected to the back grinding process is attached to the die bonding sheet in the dicing die bonding film, the back grinding tape is peeled off from the other surface of the one semiconductor wafer (mounting step).

[0010] (4) For the semiconductor wafer mounted on the die bonding sheet, laser irradiation is performed from the other surface side of the semiconductor wafer to cut the area of ​​the die bonding sheet corresponding to the plurality of grooves (laser cutting step). That is, the die bonding sheet is singulated (cut) along the plurality of grooves by laser irradiation.

[0011] (5) The individualized (cut) die-bonding sheet and the adhesive layer are peeled off, and the plurality of semiconductor chips are picked up respectively in a state where the individualized (cut) die-bonding sheet is attached to the semiconductor chip (picking up step).

[0012] It should be noted that at least one electrode portion is disposed on the other surface of each of the plurality of semiconductor chips.

[0013] The semiconductor chip to which the singulated (cut) die-bonding sheet is attached (hereinafter also referred to as a semiconductor chip with a singulated die-bonding sheet) is picked up and then used to construct a semiconductor device, for example, according to the following steps.

[0014] (1′) The semiconductor chip with the singulation die-bonding sheet is bonded to a wiring substrate (die bonding step).

[0015] (2') After the semiconductor chip with the singulated chip bonding sheet is electrically connected to the wiring substrate by using bonding wires, specifically, after the electrode portion arranged on a single side of the semiconductor chip with the singulated chip bonding sheet is electrically connected to the electrode portion arranged on the wiring substrate by using bonding wires, the semiconductor chip is resin-sealed using a sealing resin.

[0016] (3') The sealing resin is cured at a predetermined temperature (eg, 175° C.) Thus, a semiconductor package including the semiconductor chip with the singulation die-bonding sheet is obtained.

[0017] (4') The semiconductor package is electrically connected to the motherboard by soldering at a predetermined temperature (eg, 260° C.) Thus, a semiconductor device including the semiconductor chip with the singulation die-bonding sheet is obtained.

[0018] Prior art literature

[0019] Patent Literature

[0020] Patent Document 1: Japanese Patent Application Publication No. 2011-23607 Summary of the invention

[0021] Problem that the invention aims to solve

[0022] However, in the installation process (3) above, sometimes a gap is generated between the aforementioned one surface of the aforementioned one semiconductor wafer, or more specifically, between each surface of the plurality of semiconductor chips in the singulated (cut) state and the aforementioned chip bonding sheet before singulation (cutting). In this case, such a gap will of course remain between each singulated (cut) chip bonding sheet and one surface of each semiconductor chip in the laser cutting process (4) above. That is, each of the plurality of semiconductor chips with singulated chip bonding sheets has a gap.

[0023] The voids contain moisture in the air in addition to air. Therefore, if the semiconductor chip with a singulation die-bonding sheet has the voids as described above, the amount of moisture in the semiconductor package including the semiconductor chip with a singulation die-bonding sheet increases.

[0024] In this case, during soldering at a predetermined temperature (e.g., 260° C.) for electrically connecting the semiconductor package to the motherboard, the volume expansion caused by the vaporization of the moisture in the semiconductor package increases, and the pressure in the semiconductor package may increase significantly due to the volume expansion. As a result, there is a concern that the semiconductor package may be destroyed due to the significant pressure increase (so-called popcorn phenomenon), which is undesirable.

[0025] In addition, the picking-up process (5) mentioned above is implemented, for example, in the following manner: after the semiconductor chip with the singulated chip bonding sheet is lifted up from the substrate layer side of the aforementioned diced chip bonding film by a lifting member such as a pin member, the lifted semiconductor chip with the singulated chip bonding sheet is held by an adsorption fixture. In this picking-up process, in order to efficiently recover each of the aforementioned semiconductor chips with the singulated chip bonding sheet, the aforementioned diced chip bonding film is stretched to leave a gap between the aforementioned semiconductor chips with the singulated chip bonding sheets adjacent to each other, and then lifting is performed by the aforementioned lifting member. However, when the aforementioned diced chip bonding film is stretched, the aforementioned substrate layer of the aforementioned diced chip bonding film may sometimes be broken.

[0026] However, it cannot be said that sufficient research has been conducted to simultaneously solve the problems of suppressing the generation of gaps between the semiconductor chip and the die-bonding sheet in the mounting process and suppressing the generation of cracks in the base material layer of the dicing die-bonding film in the pickup process.

[0027] Therefore, an object of the present invention is to provide a die bonding sheet and a dicing die bonding film having the same, wherein the die bonding sheet can simultaneously solve the problems of suppressing the generation of gaps between a semiconductor chip and the die bonding sheet during the mounting process and suppressing the generation of cracks in the base material layer of the dicing die bonding film during the pickup process.

[0028] Solutions for solving problems

[0029] The inventors of the present invention conducted in-depth research and found that, in a chip bonding sheet containing a thermoplastic resin as an organic component, by making the aforementioned thermoplastic resin contain an acrylic polymer with a mass average molecular weight of less than 80,000 and the melt viscosity of the chip bonding sheet at 80°C is less than 30 kPa·s, the above-mentioned two problems can be solved at the same time, thereby conceiving of the present invention.

[0030] That is, the die-bonding sheet of the present invention contains a thermoplastic resin as an organic component.

[0031] The thermoplastic resin comprises an acrylic polymer having a mass average molecular weight of 80,000 or less.

[0032] The die-bonding sheet has a melt viscosity at 80° C. of 30 kPa·s or less.

[0033] Furthermore, the dicing die-bonding film of the present invention comprises:

[0034] A dicing tape having an adhesive layer laminated on a base material layer; and

[0035] a die bonding sheet laminated on the adhesive layer of the dicing tape,

[0036] The aforementioned die bonding sheet is the above-mentioned die bonding sheet.

[0037] Effects of the Invention

[0038] According to the present invention, a die bonding sheet can be provided, which can simultaneously solve the problems of suppressing the generation of gaps between a semiconductor chip and the die bonding sheet during the mounting process and suppressing the generation of cracks in the base material layer of a diced die bonding film during the pickup process. In addition, a diced die bonding film having the above-mentioned die bonding sheet can be provided. BRIEF DESCRIPTION OF THE DRAWINGS

[0039] Figure 1 It is a perspective view showing the structure of a die-bonding sheet according to one embodiment of the present invention.

[0040] Figure 2 This is a cross-sectional view for explaining a usage example of the die-bonding sheet according to one embodiment of the present invention.

[0041] Figure 3 It is a cross-sectional view showing the structure of a dicing die-bonding film including a die-bonding sheet according to one embodiment of the present invention.

[0042] Figure 4A The figure is a cross-sectional view schematically showing a half-cutting process in a method for manufacturing a semiconductor integrated circuit.

[0043] Figure 4BThe figure is a cross-sectional view schematically showing a half-cutting process in a method for manufacturing a semiconductor integrated circuit.

[0044] Figure 4C This is a cross-sectional view schematically showing a backside grinding process in a method for manufacturing a semiconductor integrated circuit.

[0045] Figure 4D This is a cross-sectional view schematically showing a backside grinding process in a method for manufacturing a semiconductor integrated circuit.

[0046] Figure 5A This is a cross-sectional view schematically showing a mounting step in a method of manufacturing a semiconductor integrated circuit.

[0047] Figure 5B This is a cross-sectional view schematically showing a mounting step in a method of manufacturing a semiconductor integrated circuit.

[0048] Figure 6 This is a cross-sectional view schematically showing a laser cutting process in a method for manufacturing a semiconductor integrated circuit.

[0049] Figure 7 This is a cross-sectional view schematically showing a pickup step in a method of manufacturing a semiconductor integrated circuit.

[0050] Description of Reference Numerals

[0051] 1 base material layer, 2 adhesive layer, 10 die bonding sheet, 20 semiconductor chip, 30 adherend, 40 dicing tape, 50 dicing die bonding film, G back grinding tape, J suction jig, P pin member, R dicing ring, T wafer processing tape, W semiconductor wafer. DETAILED DESCRIPTION

[0052] Hereinafter, one embodiment of the present invention will be described.

[0053] [Chip Bonding Sheet]

[0054] The die-bonding sheet 10 of this embodiment (see Figure 1 ) contains a thermoplastic resin as an organic component.

[0055] In addition, in the die-bonding sheet 10 of the present embodiment, the thermoplastic resin includes an acrylic polymer having a mass average molecular weight Mw of 80,000 or less.

[0056] Furthermore, the melt viscosity of the die-bonding sheet 10 of the present embodiment at 80° C. is 30 kPa·s or less.

[0057] The die-bonding sheet 10 of the present embodiment is generally in the form of a long tape, and is stored in a state of being wound into a roll, that is, in a state of being a wound body.

[0058] The mass average molecular weight Mw of the acrylic polymer is preferably 75,000 or less, more preferably 70,000 or less, further preferably 65,000 or less, and further preferably 55,000 or less.

[0059] The mass average molecular weight Mw of the acrylic polymer is preferably 5,000 or more, more preferably 8,000 or more, and even more preferably 10,000 or more.

[0060] The mass average molecular weight Mw of the acrylic polymer may be 20,000 or more, 25,000 or more, or 30,000 or more.

[0061] The mass average molecular weight Mw of the acrylic polymer can be measured by GPC under the following conditions.

[0062] ·Measurement device: Made by Waster Co., Ltd., model "Alliance GPC 2000"

[0063] Column: Two TSKgel GMH6-HT (manufactured by Tosoh Corporation) were connected in series, and two TSKgel GMH-HTL were further connected in series on the downstream side.

[0064] Column size: TSKgel GMH6-HT and TSKgel GMH-HTL are both 7.5mm inner diameter x 300mm long

[0065] Column temperature: 140℃

[0066] Flow rate: 1.0mL / min

[0067] ·Eluent: o-dichlorobenzene

[0068] Sample preparation concentration: 0.10 mass% (dissolved in o-dichlorobenzene)

[0069] Sample injection volume: 40μL

[0070] Detector: RI (differential refractometer)

[0071] Standard sample: polystyrene

[0072] The mass average molecular weight Mw of the acrylic polymer can be appropriately adjusted by, for example, changing the reaction conditions when synthesizing the acrylic polymer by free radical polymerization. For example, the mass average molecular weight Mw can be increased or decreased by the monomer concentration, the amount of polymerization initiator, the reaction temperature, or the addition of a chain transfer agent. It should be noted that a commercial product of the acrylic polymer having a desired molecular weight can be purchased.

[0073] The melt viscosity of the die-bonding sheet 10 at 80° C. is preferably 25 kPa·s or less, more preferably 20 kPa·s or less, and further preferably 15 kPa·s or less. The melt viscosity at 80° C. may be 10 kPa·s or less, or 5.0 kPa·s.

[0074] The melt viscosity of the die-bonding sheet 10 at 80° C. is preferably 0.1 kPa·s or more, more preferably 0.5 kPa·s or more, and further preferably 1.0 kPa·s or more. The melt viscosity at 80° C. may be 2.0 kPa·s or more, 3.0 kPa·s or more, or 4.0 kPa·s or more.

[0075] The melt viscosity at 80° C. can be measured by a parallel plate method using a rheometer (“HAAKE MARSIII” manufactured by Themo Fisher Scientific). Specifically, the measurement can be performed according to the following procedure.

[0076] (1) A test piece was sandwiched between a heating hot plate and a parallel plate (8 mm in diameter) arranged parallel to the hot plate. A 300 μm thick die-bonding sheet was punched into a circular shape using an 8 mm diameter punch. The gap between the plates was 250 μm.

[0077] (2) The melt viscosity at 80° C. of the test piece was measured under the conditions of a heating rate of 10° C. / min, a frequency of 1 Hz, a strain value of 5%, and a temperature range of 50 to 90° C. Specifically, the melt viscosity at 80° C. was determined by reading the value at 80° C.

[0078] The melt viscosity of the die bonding sheet 10 can be increased, for example, by increasing the content of filler contained in the die bonding sheet 10. On the other hand, the melt viscosity can be reduced, for example, by reducing the content of filler contained in the die bonding sheet 10. The melt viscosity can also be reduced by making the die bonding sheet 10 contain a material having a low softening point or a material that is liquid at room temperature.

[0079] like Figure 2 As shown, the die bonding sheet 10 of the present embodiment is used to bond (die bond) a semiconductor chip (small piece) 20 to an adherend 30 such as a wiring substrate or a lead frame. Specifically, the die bonding sheet 10 of the present embodiment is used as follows: one surface 10A is bonded to the semiconductor chip 20, and the other surface 10B is bonded to the adherend 30.

[0080] The wiring substrate may be a substrate in which wiring is formed on a glass epoxy resin board, or may be a substrate in which wiring is formed on a silicon board.

[0081] The lead frame may be a silver-plated copper lead frame.

[0082] It should be noted that the adherend 30 is not limited to the aforementioned wiring substrate and the aforementioned lead frame, and is not limited as long as a conducting member for achieving conduction with the outside is provided on a support body.

[0083] As described above, the die-bonding sheet 10 of the present embodiment contains a thermoplastic resin as an organic component. In addition, the thermoplastic resin contains an acrylic polymer having a mass average molecular weight Mw of 80,000 or less.

[0084] The mass ratio of the acrylic polymer having a mass average molecular weight Mw of 80,000 or less in the total mass of the thermoplastic resin is preferably 70 mass % or more, more preferably 80 mass % or more, and even more preferably 90 mass % or more.

[0085] The mass ratio of the acrylic polymer having a mass average molecular weight Mw of 80,000 or less in the total mass of the thermoplastic resin may be 100 mass %. That is, the thermoplastic resin may be entirely acrylic polymer having a mass average molecular weight Mw of 80,000 or less.

[0086] The acrylic polymer has the properties of less ionic impurities and high heat resistance. Therefore, by including the acrylic polymer, the die-bonding sheet 10 can exhibit sufficient connection reliability to adherends such as the semiconductor chip 20, the wiring substrate, and the lead frame.

[0087] In addition, the said acrylic polymer functions as a binder.

[0088] The acrylic polymer (first acrylic polymer) preferably contains a monomer unit derived from (meth)acrylic acid ester as the largest monomer unit in terms of mass ratio. It should be noted that in this specification, the expression "(meth)acrylic acid" includes both "acrylic acid" and "methacrylic acid".

[0089] As a (meth)acrylic acid ester, a linear alkyl (meth)acrylate, a cycloalkyl (meth)acrylate, an aryl (meth)acrylate, etc. are mentioned, for example.

[0090] The acrylic polymer may also contain monomer units derived from other components copolymerizable with (meth)acrylate. Examples of the other components include carboxyl group-containing monomers, acid anhydride monomers, hydroxyl group-containing monomers, glycidyl group-containing monomers, sulfonic acid group-containing monomers, phosphoric acid group-containing monomers, acrylamide, acrylonitrile and other functional group-containing monomers, or various multifunctional monomers.

[0091] The acrylic polymers may be used alone or in combination of two or more.

[0092] The acrylic polymer having a mass average molecular weight Mw of 80,000 or less preferably contains (meth)acrylonitrile such as acrylonitrile (AN) as a monomer unit constituting the polymer.

[0093] The acrylic polymer may contain, as the monomer unit, 10 mol % or more of (meth)acrylonitrile such as acrylonitrile (AN), 15 mol % or more, or 20 mol % or more.

[0094] The acrylic polymer may contain, as a monomer unit, 90 mol % or less, 80 mol % or less, or 70 mol % or less of (meth)acrylonitrile such as acrylonitrile (AN).

[0095] The acrylic polymer may contain, as monomer units other than (meth)acrylonitrile, (meth)acrylic acid (AA, etc.), methyl (meth)acrylate (MMA, etc.), ethyl acrylate (EA) or ethyl methacrylate (EMA), butyl acrylate (BA) or butyl methacrylate (BMA), 2-ethylhexyl (meth)acrylate (2EHA, etc.), styrene monomer (ST), glycidyl (meth)acrylate (GMA, etc.), etc.

[0096] The acrylic polymer may be a copolymer of (meth)acrylonitrile, a linear alkyl (meth)acrylate having an alkyl moiety with 1 to 4 carbon atoms (e.g., ethyl (meth)acrylate, butyl (meth)acrylate, etc.), and (meth)acrylic acid such as acrylic acid (AA).

[0097] When the acrylic polymer is a copolymer as described above, the acrylic polymer may contain 15 mol% to 50 mol% (meth)acrylonitrile, 5 mol% to 60 mol% ethyl (meth)acrylate, 5 mol% to 60 mol% butyl (meth)acrylate, and 0.01 mol% to 10 mol% (meth)acrylic acid.

[0098] In the die bonding sheet 10 of this embodiment, the mass ratio of the acrylic polymer having a mass average molecular weight Mw of 80,000 or less in the total mass of the aforementioned organic components may be 10 mass % or more, 15 mass % or more, 20 mass % or more, or 25 mass % or more.

[0099] The mass ratio of the acrylic polymer having a mass average molecular weight Mw of 80,000 or less in the total mass of the organic component may be 50 mass % or less, 40 mass % or less, or 35 mass % or less.

[0100] The die-bonding sheet 10 of the present embodiment may contain a thermoplastic resin other than the above-mentioned acrylic polymer.

[0101] Examples of thermoplastic resins other than the acrylic polymers include natural rubber, butyl rubber, isoprene rubber, chloroprene rubber, ethylene-vinyl acetate copolymers, ethylene-acrylic acid copolymers, ethylene-acrylate copolymers, polybutadiene resins, polycarbonate resins, thermoplastic polyimide resins, polyamide resins such as polyamide 6 or polyamide 6,6, phenoxy resins, saturated polyester resins such as PET and PBT, polyamideimide resins, and fluororesins.

[0102] The above-mentioned thermoplastic resins may be used alone or in combination of two or more.

[0103] The die-bonding sheet 10 of the present embodiment may contain a thermosetting resin as the organic component. The die-bonding sheet 10 of the present embodiment exhibits a thermosetting property by containing the thermosetting resin.

[0104] In the die-bonding sheet 10 of the present embodiment, the mass ratio of the thermosetting resin in the total mass of the organic component may be 50 mass % or more, 60 mass % or more, or 65 mass % or more.

[0105] The mass ratio of the thermosetting resin in the total mass of the organic component may be 90 mass % or less, 85 mass % or less, 80 mass % or less, or 75 mass % or less.

[0106] Examples of the thermosetting resin include epoxy resins, phenolic resins, amino resins, unsaturated polyester resins, polyurethane resins, silicone resins, and thermosetting polyimide resins.

[0107] Among these, at least one of the epoxy resin and the phenol resin is preferably used as the thermosetting resin, and both of the epoxy resin and the phenol resin are more preferably used. That is, the die-bonding sheet 10 of the present embodiment more preferably contains the epoxy resin and the phenol resin as the thermosetting resin.

[0108] Examples of the epoxy resin include bisphenol A epoxy resin, bisphenol F epoxy resin, bisphenol S epoxy resin, brominated bisphenol A epoxy resin, hydrogenated bisphenol A epoxy resin, bisphenol AF epoxy resin, biphenyl epoxy resin, naphthalene epoxy resin, novolac epoxy resin, fluorene epoxy resin, trihydroxyphenylmethane epoxy resin, tetrahydroxyphenylethane epoxy resin, hydantoin epoxy resin, triglycidyl isocyanurate epoxy resin, and glycidylamine epoxy resin.

[0109] In addition, as said novolac type epoxy resin, a phenol novolac type epoxy resin, an o-cresol novolac type epoxy resin, etc. are mentioned.

[0110] The naphthalene-type epoxy resin is an epoxy resin having a naphthalene skeleton in its structure.

[0111] The epoxy resins may be used alone or in combination of two or more.

[0112] Among the various epoxy resins described above, the naphthalene-type epoxy resin or the novolac-type epoxy resin is preferred, and the novolac-type epoxy resin is particularly preferred.

[0113] The novolac epoxy resin has a large number of functional groups (glycidyl groups) per molecule, and therefore has a smaller epoxy equivalent value than other epoxy resins. Therefore, the cured product of the novolac epoxy resin has a higher crosslinking density than the cured products of other epoxy resins, and thus can exhibit excellent heat resistance.

[0114] For this reason, the mass ratio of the novolac-type epoxy resin in the total mass of the organic component and the inorganic component may be 30 mass % or more and 40 mass % or less.

[0115] The epoxy resin may have a softening point of 120° C. or less, 100° C. or less, 85° C. or less, 80° C. or less, or 70° C. or less. The epoxy resin may be liquid at room temperature or have a softening point of 40° C. or more. The softening point of the epoxy resin can be determined by the ring and ball method specified in JIS K6910-2007.

[0116] The epoxy resin may have an epoxy equivalent of 80 g / eq or more, 100 g / eq or more, or 120 g / eq or more.

[0117] The epoxy resin may have an epoxy equivalent of 400 g / eq or less, an epoxy equivalent of 200 g / eq or less, or an epoxy equivalent of 170 g / eq or less.

[0118] The epoxy equivalent of the epoxy resin can be determined according to JIS K7236:2009.

[0119] Examples of the phenolic resin include novolac-type phenolic resins, resol-type phenolic resins, cresol novolac-type phenolic resins, triphenylmethane skeleton-containing phenolic resins, biphenyl skeleton-containing phenolic resins, naphthalene skeleton-containing phenolic resins, and polyoxystyrene such as polyoxystyrene.

[0120] The phenolic resins may be used alone or in combination of two or more.

[0121] When the phenol resin and the epoxy resin are used in combination, the phenol resin functions as a curing agent for the epoxy resin.

[0122] The phenolic resin may have a softening point of 120° C. or less, 100° C. or less, or 90° C. or less. The phenolic resin may be liquid at room temperature or have a softening point of 40° C. or more. The softening point of the phenolic resin can be determined by the ring and ball method specified in JIS K6910-2007.

[0123] The phenol resin may have a hydroxyl equivalent of 70 g / eq or more, 90 g / eq or more, or 100 g / eq or more.

[0124] The phenol resin may have a hydroxyl equivalent of 400 g / eq or less, 200 g / eq or less, or 150 g / eq or less.

[0125] The hydroxyl equivalent of the phenol resin can be determined according to JIS K0070:1992.

[0126] When the epoxy resin and the phenol resin are used in combination, the mass ratio of the epoxy resin in the total amount of the epoxy resin and the phenol resin is preferably 40 mass % or more, more preferably 50 mass % or more, and even more preferably 60 mass % or more.

[0127] The mass ratio of the epoxy resin in the total amount of the epoxy resin and the phenol resin is preferably 80 mass % or less, more preferably 70 mass % or less.

[0128] The die-bonding sheet 10 of the present embodiment may contain a cross-linking agent (thermosetting catalyst) from the viewpoint of allowing the curing reaction of the thermosetting resin to proceed sufficiently or increasing the curing reaction rate.

[0129] Examples of the cross-linking agent include imidazole compounds, triphenylphosphine compounds, amine compounds, and trihaloborane compounds.

[0130] The die-bonding sheet 10 of the present embodiment may contain an inorganic filler as an inorganic component.

[0131] Examples of the inorganic filler include fillers containing aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, boron nitride, or silicon dioxide such as crystalline silicon dioxide or amorphous silicon dioxide.

[0132] Furthermore, examples of the material of the inorganic filler include metal single substances or alloys such as aluminum, gold, silver, and nickel.

[0133] The inorganic filler may be aluminum borate whisker, amorphous carbon black, graphite, or carbon nanotubes.

[0134] That is, examples of the inorganic filler include oxide fillers, nitride fillers, silicate fillers, carbide fillers, hydroxide fillers, carbonate fillers, sulfate fillers, and metal fillers.

[0135] Among the various fillers described above, a silica filler composed of silicon dioxide is preferred.

[0136] The surface of the silica filler may be treated with a silane coupling agent such as epoxy silane.

[0137] The inorganic filler may be in various shapes such as spherical, needle-like, or flake-like. Among these various shapes, a spherical shape is preferred.

[0138] The above-mentioned inorganic fillers may be used alone or in combination of two or more.

[0139] In the die-bonding sheet 10 , the mass ratio of the inorganic filler in the total mass of the organic component and the inorganic component may be 5 mass % or more, 7 mass % or more, 10 mass % or more, or 12 mass % or more.

[0140] The mass ratio of the aforementioned inorganic filler in the total mass of the aforementioned organic component and the aforementioned inorganic component may be 30 mass % or less, 25 mass % or less, 20 mass % or less, 18 mass % or less, or 17 mass % or less.

[0141] By making the mass ratio of the aforementioned inorganic filler within the above numerical range, in addition to ensuring the conformality of the die bonding sheet 10, the die bonding sheet 10 can also have a moderate melt viscosity. By making the die bonding sheet 10 have a moderate melt viscosity, when using the die bonding sheet 10 in a state of being attached to a semiconductor chip to bury other semiconductor chips, the burying can be easily implemented. In addition, when the die bonding sheet 10 in a state of being attached to a semiconductor chip is attached to a circuit substrate having bumps and depressions, it is easy to bury the aforementioned bumps and depressions with the die bonding sheet 10.

[0142] The average particle size of the inorganic filler is preferably 0.005 μm (5 nm) or more, more preferably 0.005 μm (5 nm) or more, further preferably 0.01 μm (10 nm) or more, and further preferably 0.015 μm (15 nm) or more.

[0143] The average particle size of the inorganic filler is preferably 10 μm (10,000 nm) or less, more preferably 1 μm (1,000 nm) or less, further preferably 0.3 μm (300 nm) or less, and further preferably 0.1 μm (100 nm) or less.

[0144] When the average particle size of the inorganic filler is 0.005 μm or more, the wettability and adhesiveness to an adherend such as a semiconductor wafer or a semiconductor chip can be further improved.

[0145] By setting the average particle size of the inorganic filler to 10 μm or less, not only the characteristics of the filler can be more fully exerted, but also the heat resistance of the die-bonding sheet 10 can be further exerted.

[0146] The average particle size of the inorganic filler can be measured by dynamic light scattering (DLS). Specifically, the inorganic filler is dispersed in methyl ethyl ketone (MEK) in a manner such that the solid content concentration is less than 1% by mass, thereby preparing a sample for particle size determination. The average particle size of the inorganic filler in the sample for particle size determination is measured using a dynamic light scattering photometer (model "ZEN3600": Sysmex Company). It should be noted that, before the measurement, the sample for particle size determination can also be treated for 2 minutes by an ultrasonic homogenizer.

[0147] The die-bonding sheet 10 of the present embodiment may include two or more inorganic fillers having different average particle diameters. The two or more inorganic fillers may be made of different particle materials and have different particle shapes.

[0148] The thickness of the die-bonding sheet 10 is not particularly limited, and is, for example, 1 μm or more and 200 μm or less. The thickness may be 3 μm or more, or 5 μm or more. The thickness may be 150 μm or less, or 100 μm or less.

[0149] The thickness of the die-bonding sheet 10 can be determined by, for example, measuring the thickness at five randomly selected locations using a micrometer (manufactured by PEACOCK, Model R-205) and calculating the arithmetic average of the thicknesses.

[0150] The chip bonding sheet 10 can be produced by the following method: a resin composition containing the components described above is dissolved or suspended in an organic solvent (e.g., methyl ethyl ketone (MEK)) to obtain an adhesive composition, the adhesive composition is applied to a surface of a resin film, etc. using an applicator, and the applied adhesive composition is dried.

[0151] The resin film is preferably a release film (release liner) having a release treatment applied to the surface. When the release film is used as the resin film, it is preferred that the adhesive composition be applied to the release-treated surface.

[0152] [Dicing Die Bonding Film]

[0153] like Figure 3 As shown, the dicing die-bonding film 50 of the present embodiment includes a dicing tape 40 in which the adhesive layer 2 is laminated on a base layer 1 , and a die-bonding sheet 10 laminated on the adhesive layer 2 with a part of the adhesive layer 2 exposed.

[0154] In the dicing die-bonding film 50 of the present embodiment, the die-bonding sheet 10 of the present embodiment described above is used as the die-bonding sheet 10 .

[0155] When the dicing die-bonding film 50 is used, a semiconductor wafer is attached to the die-bonding sheet 10 .

[0156] In the cutting of the semiconductor wafer using the dicing die-bonding film 50, the die-bonding sheet 10 is also cut together with the semiconductor wafer. Figure 2 As shown in FIG. 1 , the die-bonding sheet 10 is cut into pieces corresponding to the sizes of the plurality of singulated semiconductor chips. Thus, semiconductor chips with the die-bonding sheet 10 can be obtained.

[0157] The base material layer 1 supports the adhesive layer 2. The base material layer 1 is produced using a metal foil, a fiber sheet, a rubber sheet, a resin film, or the like.

[0158] The base material layer 1 is preferably made of a resin film. The base material layer 1 may have a single layer structure or a laminated structure.

[0159] Examples of the fiber sheet include sheets made of paper, woven fabric, or nonwoven fabric.

[0160] Examples of the material of the aforementioned resin film include polyolefins such as polyethylene, polypropylene, and ethylene-propylene copolymers; copolymers of ethylene such as ethylene-vinyl acetate copolymers, ionomer resins, ethylene-(meth)acrylic acid copolymers, ethylene-(meth)acrylic acid ester random copolymers, and ethylene-(meth)acrylic acid ester alternating copolymers; polyesters such as polyethylene terephthalate, polyethylene naphthalate, and polybutylene terephthalate; polyacrylates; polyvinyl chloride (PVC); polyurethane; polycarbonate; polyphenylene sulfide; polyamides such as aliphatic polyamides and wholly aromatic polyamides (aramid); polyetheretherketone; polyimide; polyetherimide; polyvinylidene chloride; ABS (acrylonitrile-butadiene-styrene copolymer); cellulose or cellulose derivatives; silicone-containing polymers; fluorine-containing polymers, etc.

[0161] These may be used alone or in combination of two or more.

[0162] When the base material layer 1 is made of a resin film, the base material layer 1 may be obtained by non-stretching molding or by stretching molding, but is preferably obtained by stretching molding.

[0163] In the base material layer 1, the surface on the side where the adhesive layer 2 is laminated (hereinafter also referred to as the surface) may be subjected to a surface treatment from the viewpoint of improving the adhesion with the adhesive layer 2. As the surface treatment, an oxidation treatment based on a chemical method or a physical method such as a corona treatment, a plasma treatment, a chromic acid treatment, an ozone exposure, a flame exposure, a high voltage electric shock exposure, or an ionizing radiation treatment may be adopted.

[0164] As the surface treatment, coating treatment using a coating agent such as an anchor coating agent, a primer, or an adhesive can be adopted.

[0165] The side of the substrate layer 1 on which the adhesive layer 2 is not laminated (hereinafter also referred to as the back side) may be coated with a release agent (release agent) such as a silicone resin or a fluororesin to improve the releasability. In addition, an antistatic treatment may be applied to either the surface or the back side of the substrate layer 1, or both the surface and the back side.

[0166] The thickness of the base material layer 1 is preferably 55 μm or more, more preferably 60 μm or more, and further preferably 70 μm or more.

[0167] The thickness of the base material layer 1 is preferably 195 μm or less, more preferably 190 μm or less, further preferably 170 μm or less, further preferably 160 μm or less, and most preferably 120 μm or less.

[0168] When the thickness of the base material layer 1 is within the above range, the dicing tape 40 can be efficiently manufactured. In addition, the die-bonding sheet 10 of the dicing die-bonding film 50 can be efficiently cut.

[0169] The thickness of the base material layer 1 can be determined by, for example, measuring the thickness at five randomly selected locations using a micrometer (manufactured by PEACOCK, Model R-205) and calculating the arithmetic average of these thicknesses.

[0170] In the dicing die-bonding film 50 of the present embodiment, the adhesive layer 2 has adhesiveness and holds the die-bonding sheet 10 by being bonded to the die-bonding sheet 10. In order to exert such adhesiveness, the adhesive layer 2 contains an adhesive.

[0171] Examples of the adhesive include an adhesive whose adhesive force can be reduced by an external action during use of the dicing die-bonding film 50 (hereinafter referred to as an adhesive reducing type adhesive).

[0172] When an adhesion-reducing adhesive is used as an adhesive, during the use of the cutting chip bonding film 50, the adhesive layer 2 can be used in a state showing relatively high adhesion (hereinafter referred to as a high adhesion state) and a state showing relatively low adhesion (hereinafter referred to as a low adhesion state).

[0173] For example, when the semiconductor wafer of the die-bonding sheet 10 attached to the dicing die-bonding film 50 is cut, the high adhesion state is used to suppress the plurality of semiconductor chips separated by the cutting of the semiconductor wafer from floating or peeling off from the adhesive layer 2 .

[0174] On the other hand, after the semiconductor wafer is cut, the low adhesion state is used to facilitate picking up the plurality of individual semiconductor chips from the adhesive layer 2 .

[0175] Examples of the adhesion-reducing adhesive include adhesives that can be cured by irradiation with active energy rays (hereinafter referred to as active energy ray-curing adhesives). That is, the adhesion-reducing adhesive contains a curing component that is cured by irradiation with active energy rays.

[0176] As the active energy ray-curable adhesive, for example, adhesives of the type that are cured by irradiation with electron beams, ultraviolet rays, α rays, β rays, γ rays, or X-rays can be cited. Among these, adhesives that are cured by irradiation with ultraviolet rays (ultraviolet curable adhesives) are preferably used.

[0177] Examples of the active energy ray-curable adhesive include an additive-type active energy ray-curable adhesive comprising a base polymer as a main component and an active energy ray-polymerizable monomer component or an active energy ray-polymerizable oligomer component having a functional group such as an active energy ray-polymerizable carbon-carbon double bond.

[0178] The base polymer is preferably an acrylic polymer (second acrylic polymer). The base polymer may be a polymer that is polymerized and cured by irradiation with active energy rays, thereby reducing the adhesive force of the pressure-sensitive adhesive layer 2 .

[0179] Examples of the acrylic polymer include polymers containing monomer units derived from (meth)acrylates, and examples of (meth)acrylates include linear alkyl (meth)acrylates, cycloalkyl (meth)acrylates, and aryl (meth)acrylates.

[0180] As the aforementioned monomer unit derived from (meth)acrylate, for example, preferably, 2-hydroxyethyl (meth)acrylate (HEA etc.), ethyl (meth)acrylate (EA etc.), butyl (meth)acrylate (BA etc.), 2-ethylhexyl (meth)acrylate (2EHA etc.), isononyl (meth)acrylate (iNA etc.), lauryl (meth)acrylate (LA etc.), 4-(meth)acryloylmorpholine (AMCO etc.), 2-isocyanatoethyl (meth)acrylate (MOI etc.) and the like.

[0181] The (meth)acrylic acid ester-derived monomer unit may be used alone or in combination of two or more.

[0182] The acrylic polymer preferably contains 2-ethylhexyl acrylate (2EHA), 2-hydroxyethyl acrylate (HEA), and 2-isocyanatoethyl methacrylate (MOI) as the monomer unit derived from the (meth)acrylate.

[0183] Furthermore, the acrylic polymer may contain, as the (meth)acrylic acid ester-derived monomer unit, lauryl acrylate (LA) and isononyl acrylate (iNA) in addition to the 2EHA, HEA and MOI.

[0184] The adhesive layer 2 may contain an external crosslinking agent.

[0185] The external crosslinking agent is not particularly limited as long as it can react with the base polymer (for example, acrylic polymer) to form a crosslinked structure.

[0186] Examples of such an external crosslinking agent include polyisocyanate compounds, epoxy compounds, polyol compounds, aziridine compounds, and melamine-based crosslinking agents.

[0187] Examples of the active energy ray-polymerizable monomer component include urethane (meth)acrylate, trimethylolpropane tri(meth)acrylate, pentaerythritol tri(meth)acrylate, pentaerythritol tetra(meth)acrylate, dipentaerythritol monohydroxy penta(meth)acrylate, dipentaerythritol hexa(meth)acrylate, and 1,4-butanediol di(meth)acrylate.

[0188] Examples of the active energy ray polymerizable oligomer component include various oligomers such as urethane, polyether, polyester, polycarbonate, or polybutadiene. The content ratio of the active energy ray polymerizable monomer component or active energy ray polymerizable oligomer component in the active energy ray curable adhesive is selected within a range that appropriately reduces the adhesiveness of the adhesive layer 2.

[0189] The active energy ray-curable adhesive preferably contains a photopolymerization initiator. Examples of the photopolymerization initiator include azo compounds, α-ketol compounds, acetophenone compounds, benzoin ether compounds, ketal compounds, aromatic sulfonyl chloride compounds, photoactive oxime compounds, benzophenone compounds, thioxanthone compounds, camphorquinone, haloketones, acylphosphine oxides, and acylphosphonates.

[0190] As said azo compound, azobisisobutyronitrile (AIBN) is mentioned, for example.

[0191] When the pressure-sensitive adhesive layer 2 contains an external cross-linking agent, the pressure-sensitive adhesive layer 2 preferably contains 0.1 parts by mass or more and 3 parts by mass or less of the external cross-linking agent.

[0192] Moreover, when the adhesive layer 2 contains a photopolymerization initiator, the adhesive layer 2 preferably contains 0.1 parts by mass or more and 10 parts by mass or less of the photopolymerization initiator.

[0193] The adhesive layer 2 may contain, in addition to the above-mentioned components, a cross-linking accelerator, a tackifier, an antioxidant, a colorant such as a pigment or a dye, and the like.

[0194] The thickness of the adhesive layer 2 is preferably 1 μm or more, more preferably 2 μm or more, and even more preferably 3 μm or more.

[0195] The thickness of the adhesive layer 2 is preferably 50 μm or less, more preferably 30 μm or less, further preferably 25 μm or less, and particularly preferably 12 μm or less.

[0196] The thickness of the pressure-sensitive adhesive layer 2 can be determined, for example, by measuring the thickness at five randomly selected locations using a micrometer (manufactured by PEACOCK, Model R-205) and calculating the arithmetic average of these thicknesses.

[0197] The adhesive layer 2 can be produced by applying an adhesive composition containing the above-mentioned components on the surface of a resin film or the like using an applicator or the like, and then drying the applied adhesive composition.

[0198] In addition, the die-bonding sheet 10 can be attached to the adhesive layer 2 by laminating the die-bonding sheet 10 on the adhesive layer 2 produced as described above.

[0199] In addition, when the die-bonding sheet 10 in a state of being bonded to the resin film is laminated on the adhesive layer 2 , the resin film may be peeled off from the surface of the die-bonding sheet 10 after lamination.

[0200] The dicing die-bonding film 50 according to the present embodiment is used as an auxiliary tool for manufacturing a semiconductor integrated circuit, for example. Hereinafter, a specific example of a method of using the dicing die-bonding film 50 will be described.

[0201] Hereinafter, a usage example of the dicing die-bonding film 50 including the single-layer base material layer 1 will be described.

[0202] The method for manufacturing a semiconductor integrated circuit has the following steps: a half-cutting step, in which a groove is formed on a semiconductor wafer in order to process the semiconductor wafer into a chip (small piece) by cutting; a back grinding step, in which the semiconductor wafer after the half-cutting step is ground to reduce the thickness; a mounting step, in which one surface (for example, the surface on the opposite side to the circuit surface) of the semiconductor wafer after the back grinding step is attached to a die bonding sheet 10, thereby fixing the semiconductor wafer to a dicing tape 40; a laser cutting step, in which a laser is irradiated on the semiconductor wafer after the mounting step to separate (cut) the die bonding sheet 10; a picking step, in which the die bonding sheet 10 and the adhesive layer 2 are peeled off to thereby take out the semiconductor chip (small piece) in a single-piece state attached to the die bonding sheet 10; and a die bonding step, in which the semiconductor chip (small piece) in a single-piece state attached to the die bonding sheet 10 is bonded to an adherend. When implementing these steps, the dicing tape (dicing die bonding film) of this embodiment can be used as a manufacturing auxiliary tool.

[0203] In the half-cutting process, Figure 4A and Figure 4B As shown in FIG. 1 , a half-cutting process is performed to cut a semiconductor wafer into small pieces (die). Specifically, a wafer processing tape T is attached to the surface of the semiconductor wafer W opposite to the circuit surface, or a dicing ring R is installed on the wafer processing tape T (see FIG. 1 ). Figure 4A ). A groove for dividing is formed in a state where the wafer processing tape T is attached (refer to Figure 4B ). In the back grinding process, such as Figure 4C and Figure 4DAs shown in FIG. 1 , the semiconductor wafer is ground to reduce its thickness. Specifically, a back grinding tape G is attached to the surface on which the grooves are formed, and on the other hand, the wafer processing tape T attached initially is peeled off (see FIG. 1 ). Figure 4C ). Grinding is performed with the back grinding tape G attached until the semiconductor wafer W reaches a predetermined thickness (see Figure 4D ).

[0204] During the installation process, Figure 5A and Figure 5B As shown, after the dicing ring R is attached to the adhesive layer 2 of the dicing tape 40, the semiconductor wafer W (see FIG. 1 ) which has been half-cut is attached to the exposed surface of the die bonding sheet 10. Figure 5A Then, the back grinding tape G is peeled off from the semiconductor wafer W (see Figure 5B ).

[0205] In the laser cutting process, Figure 6 As shown, a laser light source LS is used to allow laser light irradiated from the semiconductor wafer W side to reach the die-bonding sheet 10 , and the die-bonding sheet 10 is singulated (cut) by the laser light.

[0206] In the aforementioned half-cutting process, the semiconductor wafer W is singulated (cut) into a plurality of semiconductor chips 20, and grooves are formed between adjacent semiconductor chips 20. Therefore, the laser light irradiated by the laser light source LS passes through the grooves and reaches the die bonding sheet 10. As a result, the die bonding sheet 10 is singulated (cut) into a plurality of small pieces.

[0207] The semiconductor wafer W is singulated (cut) in a matrix into a plurality of semiconductor chips 20. The laser light source LS is movably arranged so as to be able to irradiate all the matrix-shaped grooves with laser light.

[0208] The laser beam is irradiated at an intensity that does not excessively cut the base layer 1 of the dicing tape 40 , in other words, at an intensity that does not leave excessive laser marks in the base layer 1 .

[0209] In the picking process, Figure 7 As shown, the semiconductor chip 20 with the die-bonding sheet 10 attached thereto is peeled off from the adhesive layer 2 of the dicing tape 40. Specifically, the pin member P is raised to lift up the semiconductor chip 20 to be picked up through the dicing tape 40. The lifted semiconductor chip 20 is held by the suction jig J.

[0210] In the aforementioned picking-up process, in order to efficiently recover each semiconductor chip 20, after the dicing die bonding film 50 is stretched and the interval between the adjacent semiconductor chips 20 is widened, lifting is performed by the pin member P. Here, since the dicing die bonding film 50 of the present embodiment includes the die bonding sheet 10 configured as described above, it is possible to suppress the formation of deep laser marks in the base material layer 1 in the aforementioned laser cutting process. Therefore, when the dicing die bonding film 50 is stretched as described above, it is possible to suppress the base material layer 1 from being broken.

[0211] In the die bonding step, the semiconductor chip 20 to which the die bonding sheet 10 is attached is bonded to an adherend.

[0212] Matters disclosed in this specification include the following. (1)

[0214] A die bonding sheet comprising a thermoplastic resin as an organic component,

[0215] The thermoplastic resin comprises an acrylic polymer having a mass average molecular weight of 80,000 or less.

[0216] The die-bonding sheet has a melt viscosity at 80° C. of 30 kPa·s or less. (2)

[0218] The die-bonding sheet according to (1) above, comprising an inorganic filler as an inorganic component,

[0219] The mass ratio of the inorganic filler to the total mass of the organic component and the inorganic component is 25 mass % or less. (3)

[0221] The die-bonding sheet according to (1) or (2) above, further comprising a thermosetting resin as the organic component,

[0222] The aforementioned thermosetting resin includes a novolac type epoxy resin. (4)

[0224] The die-bonding sheet according to (3) above, wherein:

[0225] The softening point of the novolac epoxy resin is 85° C. or lower. (5)

[0227] The die-bonding sheet according to (3) or (4) above, comprising an inorganic filler as an inorganic component,

[0228] The mass ratio of the novolac-type epoxy resin in the total mass of the organic component and the inorganic component is 30 mass % or more. (6)

[0230] A dicing die bonding film comprising:

[0231] A dicing tape having an adhesive layer laminated on a base layer, and

[0232] a die bonding sheet laminated on the adhesive layer of the dicing tape,

[0233] The die-bonding sheet is the die-bonding sheet according to any one of (1) to (5) above.

[0234] It should be noted that the die bonding sheet and the dicing die bonding film of the present invention are not limited to the aforementioned embodiments. In addition, the die bonding sheet and the dicing die bonding film of the present invention are not limited by the aforementioned effects. The die bonding sheet and the dicing die bonding film of the present invention can be variously modified within the scope of the present invention.

[0235] Example

[0236] Next, the present invention will be described in more detail with reference to the following examples. The following examples are provided to describe the present invention in more detail, and are not intended to limit the scope of the present invention.

[0237] [Example 1]

[0238] (Chip Bonding Sheet)

[0239] An adhesive composition is obtained by suspending or dissolving an organic component (1 acrylic polymer, 1 epoxy resin, 1 phenolic resin, 1 silane coupling agent, 1 organic dye, and 1 crosslinking agent) and an inorganic component (1 inorganic filler) in methyl ethyl ketone (MEK) according to the blending ratio shown in Table 1A below.

[0240] The solid content concentration of the adhesive composition is appropriately adjusted within a range of 30% by mass to 50% by mass so that a coating film can be easily formed.

[0241] Next, the adhesive composition is applied to the silicone release treated surface of a PET separator (50 μm thick) having a silicone release treated surface using an applicator to form a coating film, and the coating film is subjected to a desolventizing treatment at 120°C for 2 minutes. Then, a chip bonding sheet is formed on the PET separator with a specified thickness. Specifically, a chip bonding sheet with a thickness of 2 μm (average thickness) and a chip bonding sheet with a thickness of 20 μm (average thickness) are formed respectively. Furthermore, in order to cover each chip bonding sheet, a PET separator (25 μm thick) is attached to each chip bonding sheet.

[0242] (Cutting tape)

[0243] In a reaction container equipped with a cooling tube, a nitrogen inlet tube, a thermometer and a stirring device, 35 parts by mass of 2-hydroxyethyl acrylate (hereinafter referred to as HEA) as a monomer, 65 parts by mass of isononyl acrylate (hereinafter referred to as INA) and 0.2 parts by mass of azobisisobutyronitrile (hereinafter referred to as AIBN) as a thermal polymerization initiator were added, and ethyl acetate as a reaction solvent was added so that the concentration of the above monomers became 35% by mass. Then, polymerization treatment was carried out at 62° C. for 3 hours under a nitrogen flow, and then polymerization treatment was carried out at 75° C. for 4 hours to obtain an acrylic polymer intermediate.

[0244] To the solution containing the acrylic polymer intermediate, 2-methacryloyloxyethyl isocyanate (hereinafter referred to as MOI) was added in an amount of 32 mol relative to 100 mol of the total monomers mixed during polymerization. In addition, dibutyltin dilaurate was added as a reaction catalyst in an amount of 0.5 mass % relative to the amount of MOI added. Thereafter, an addition reaction treatment (urethanization reaction) was performed at 50° C. for 12 hours in an air flow to obtain a solution containing an acrylic polymer.

[0245] Next, 0.8 parts by mass of a polyisocyanate compound (trade name "CORONATE L", manufactured by Tosoh Corporation), 3 parts by mass of a photopolymerization initiator (trade name "Omnirad 127D", manufactured by IGM Corporation), and 0.01 parts by mass of an antioxidant (product name "Irganox 1010", manufactured by BASF Japan Co., Ltd.) were added to 100 parts by mass of the acrylic polymer to prepare an adhesive solution.

[0246] Furthermore, the adhesive solution was applied to the silicone release treated surface of a PET separator (thickness 50 μm) having a silicone release treated surface using an applicator, and dried at 120° C. for 2 minutes to form an adhesive layer with a thickness of 10 μm. Then, an EVA film (trade name "NED#125", thickness 125 μm) manufactured by Gunze Limited was bonded to the adhesive layer as a base layer, and stored at 50° C. for 24 hours to obtain a dicing tape.

[0247] It should be noted that the dicing tapes of the following examples were obtained in the same manner as described above. That is, the dicing tapes of the examples have the same structure.

[0248] (Dicing Die Bonding Film)

[0249] The PET separator used to prepare the die-bonding sheet (hereinafter referred to as a die-bonding sheet with a PET separator) was punched out into a circular shape with a diameter of 330 mm, thereby obtaining a die-bonding sheet with a PET separator with a diameter of 330 mm.

[0250] Next, the PET separator attached to the adhesive layer of the dicing tape is removed. In addition, the PET separator attached to one side of the die bonding sheet is removed. The adhesive layer of the dicing tape is laminated to the exposed surface of the die bonding sheet to obtain a dicing die bonding film.

[0251] That is, the dicing die-bonding film of Example 1 is constituted by laminating a base material layer, an adhesive layer, a die-bonding sheet, and a PET separator in this order.

[0252] In addition, the details of each component in the following Table 1 are as follows.

[0253] Organic Ingredients

[0254] <Acrylic polymer>

[0255] Acrylic polymer 1

[0256] Copolymer of acrylonitrile (AN), ethyl acrylate (EA), butyl acrylate (BA) and acrylic acid (AA) (mass average molecular weight 50,000, molar ratio of AN 40%)

[0257] Acrylic polymer 2

[0258] Copolymer of acrylonitrile (AN), ethyl acrylate (EA), butyl acrylate (BA) and acrylic acid (AA) (mass average molecular weight 35,000, molar ratio of AN 40%)

[0259] Acrylic polymer 3

[0260] Copolymer of acrylonitrile (AN), ethyl acrylate (EA), butyl acrylate (BA) and acrylic acid (AA) (mass average molecular weight 60,000, AN molar ratio 30%)

[0261] ·Acrylic polymer 4

[0262] Copolymer of acrylonitrile (AN), ethyl acrylate (EA), butyl acrylate (BA) and acrylic acid (AA) (mass average molecular weight 70,000, molar ratio of AN 12%)

[0263] Acrylic polymer 5

[0264] Copolymer of acrylonitrile (AN), ethyl acrylate (EA), butyl acrylate (BA) and acrylic acid (AA) (mass average molecular weight 150,000, AN molar ratio 30%)

[0265] Acrylic polymer 6

[0266] Copolymer of acrylonitrile (AN), ethyl acrylate (EA), butyl acrylate (BA) and acrylic acid (AA) (mass average molecular weight 100,000, molar ratio of AN 40%)

[0267] In addition, the mass average molecular weight of the acrylic polymer 1 to the acrylic polymer 6 is a value measured by the method described in the above-mentioned embodiment.

[0268] <Epoxy resin>

[0269] Epoxy resin 1

[0270] Trade name "EPPN-501HY" manufactured by Nippon Kayaku Co., Ltd. (novolak type epoxy resin (multifunctional), epoxy equivalent 167 g / eq, softening point 61°C)

[0271] Epoxy resin 2

[0272] DIC Corporation trade name "HP-6000L" (naphthalene-type epoxy resin, epoxy equivalent 215 g / eq, softening point 55°C)

[0273] Epoxy resin 3

[0274] DIC Corporation trade name "HP-4700" (naphthalene-type epoxy resin, epoxy equivalent 165 g / eq, softening point 92°C)

[0275] Epoxy resin 4

[0276] DIC Corporation trade name "HP-4032D" (naphthalene-type epoxy resin, epoxy equivalent 143 g / eq, liquid at room temperature)

[0277] Epoxy resin 5

[0278] Trade name "EHPE3150" manufactured by Daicel Corporation (alicyclic epoxy resin, epoxy equivalent 177 g / eq, softening point 75°C)

[0279] <Phenolic resin>

[0280] ·Phenolic resin 1

[0281] Meiwa Chemicals Co., Ltd., trade name "H-4" (hydroxyl equivalent 106 g / eq, softening point 71°C)

[0282] ·Phenolic resin 2

[0283] Meiwa Chemicals Co., Ltd., trade name "HF-1M" (hydroxyl equivalent 106 g / eq, softening point 84°C)

[0284] ·Phenolic resin 3

[0285] "LVR-8210DL" manufactured by Gunei Chemical Industry Co., Ltd. (novolac-type phenolic resin, hydroxyl equivalent 104 g / eq, softening point 65°C)

[0286] <Silane coupling agent>

[0287] ·Silane coupling agent 1

[0288] (2-(3,4-Epoxycyclohexyl)ethyltrimethoxysilane)

[0289] Shin-Etsu Chemical Co., Ltd., trade name "KBM-303"

[0290] <Organic dyes>

[0291] ·Organic dyes 1

[0292] Product name: "Oil Scarlet 318" manufactured by Orient Chemical Industries, Ltd.

[0293] <Crosslinking agent (thermosetting catalyst)>

[0294] Crosslinking agent 1

[0295] Trade name "2PHZ-PW" manufactured by Shikoku Kasei Co., Ltd.

[0296] Crosslinking agent 2

[0297] Trade name "TPP-MK" manufactured by Hokko Chemical Industry Co., Ltd.

[0298] Inorganic ingredients

[0299] <Inorganic filler>

[0300] Inorganic filler 1

[0301] Product name: "YA050C-MJI" manufactured by Admatechs (silica filler, average particle size 50 nm)

[0302] Inorganic filler 2

[0303] Nissan Chemical Co., Ltd. trade name "MEK-ST-ZL" (silica filler, average particle size 80 nm)

[0304] Inorganic filler 3

[0305] Trade name "SE-2050MCV" manufactured by Admatechs (spherical silica filler, average particle size 0.5 μm (500 nm))

[0306] [Example 2] to [Example 6]

[0307] (Chip Bonding Sheet)

[0308] Die-bonding sheets with PET separators were obtained in the same manner as in Example 1 except that the formulations of the organic component and the inorganic component were changed as shown in Table 1A below.

[0309] (Dicing Die Bonding Film)

[0310] Then, in the same manner as in Example 1, dicing die-bonding films were obtained.

[0311] [Example 7] to [Example 17]

[0312] (Chip Bonding Sheet)

[0313] Die-bonding sheets with PET separators were obtained in the same manner as in Example 1 except that the formulations of the organic component and the inorganic component were changed as shown in Table 1B or Table 1C below.

[0314] (Dicing Die Bonding Film)

[0315] Then, in the same manner as in Example 1, dicing die-bonding films were obtained.

[0316] [Comparative Example 1] to [Comparative Example 4]

[0317] (Chip Bonding Sheet)

[0318] Die-bonding sheets with PET separators were obtained in the same manner as in Example 1 except that the formulations of the organic component and the inorganic component were changed as shown in Table 1D below.

[0319] (Dicing Die Bonding Film)

[0320] Then, in the same manner as in Example 1, dicing die-bonding films were obtained.

[0321] In addition, the melt viscosity at 80° C. was measured for the die-bonding sheet of each example. The results are also shown in the following Tables 1A to 1D. The melt viscosity at 80° C. was measured by the method described in the above embodiment.

[0322] [Table 1A]

[0323]

[0324] [Table 1B]

[0325]

[0326] [Table 1C]

[0327]

[0328] [Table 1D]

[0329]

[0330] (Laser mark depth)

[0331] The depth of the laser mark formed on the base material layer during laser dicing was evaluated for the dicing die-bonding film of each example (the thickness of the die-bonding sheet was 20 μm).

[0332] The depth of the laser marks was measured as follows.

[0333] (1) The dicing die-bonding film of each example was attached to a dicing ring. Specifically, the base material layer of the dicing die-bonding film of each example was attached to the dicing ring.

[0334] In addition, the dicing die-bonding film of each example was cut so as to have the same dimension as the outer diameter of the dicing ring.

[0335] (2) Laser light was irradiated from the die-bonding sheet side of the dicing die-bonding film of each example to cut the die-bonding sheet into a matrix shape.

[0336] It should be noted that the laser irradiation was carried out using the trade name "DFL7161" manufactured by DISCO. The laser was irradiated while the dicing die bonding film of each example was moved at a speed of 150 mm / s. The output power of the laser was set to 0.4 W. The reason for setting the output of the laser to 0.4 W is that it is difficult to know the difference in the depth of the laser mark when the output is the weakest 0.1 W.

[0337] (3) Using a laser microscope (manufactured by KEYENCE, trade name “VK-X3000”), the depth of the laser mark formed on the base material layer was measured from the die-bonding sheet side.

[0338] Then, the depth of the obtained laser marks was evaluated according to the following criteria. The results are shown in Table 2 below.

[0339] Good: The depth of the laser marks is 5 μm or less.

[0340] Good: The depth of the laser mark was more than 5 μm and 10 μm or less.

[0341] No: The depth of the laser mark exceeds 10 μm.

[0342] The evaluation of the depth of the laser mark is an evaluation related to the cracking of the substrate layer of the dicing die bonding film. Specifically, the better the evaluation of the depth of the laser mark (the closer to excellent), the less likely the substrate layer is to crack, and the worse the evaluation of the depth of the laser mark (the closer to unacceptable), the easier it is for the substrate layer to crack.

[0343] (Gap)

[0344] The presence or absence of voids when the die-bonding sheet (thickness 2 μm) of each example was bonded to an adherend was evaluated.

[0345] The presence or absence of voids was observed by the following observation.

[0346] (1) After half-cutting a mirror wafer (outer diameter 30 cm) so as to form a plurality of regions with a plane size of 10 mm × 10 mm, a back grinding tape is attached to the half-cut mirror wafer. Next, the mirror wafer with the back grinding tape attached is ground to a thickness of 30 μm (back grinding process). Thus, a plurality of mirror chips singulated into a plane size of 10 mm × 10 mm are obtained. That is, an aggregate of a plurality of mirror chips singulated from the aforementioned mirror wafer is obtained.

[0347] (2) For the dicing die bonding film of each example, a product name “MA3000III” manufactured by Nitto Seiki Co., Ltd. was used, and after bonding an assembly of a plurality of singulated mirror surface chips, the back grinding tape was peeled off.

[0348] (3) The bonding state of the assembly of a plurality of mirror surface chips separated into individual pieces was observed from the base material layer side of the dicing die-bonding film of each example.

[0349] It should be noted that, when a gap is formed between the aggregate of the plurality of singulated mirror surface chips and the die-bonding sheet, the region where the gap is formed can be observed to have the same color as the die-bonding sheet.

[0350] Then, the obtained observation results were evaluated according to the following criteria. The results are shown in Table 2 below.

[0351] Good: When the two are bonded together (adhered to each other) at 50°C, no gaps are observed between the bonded surfaces of the plurality of mirror surface chips.

[0352] Good: When the two are bonded together at 50°C, a 20 mm gap can be observed on any of the bonded surfaces of the multiple mirror chips. 2 However, when the chips were bonded at 55°C, no voids were observed on the bonded surfaces of the mirror surface chips.

[0353] Possible: When the two are bonded together at 55°C, any of the bonded surfaces of the multiple mirror chips can be observed to be 20 mm 2 However, when the chips were bonded at 60°C, no voids were observed on the bonded surfaces of the mirror surface chips.

[0354] No: When the two are bonded together at 60°C, any of the bonded surfaces of multiple mirror chips can be observed 20mm 2A gap of the size above.

[0355] [Table 2]

[0356]

[0357] As can be seen from Table 2, the laser mark depth and the void of the die-bonding sheet of each example were evaluated as "acceptable" or above, which was good.

[0358] On the other hand, in the die-bonding sheet of each comparative example, at least one of the evaluations of the laser mark depth and the void was “unacceptable”.

Claims

1. A die bonding sheet comprising a thermoplastic resin as an organic component, The thermoplastic resin comprises an acrylic polymer having a mass average molecular weight of 80,000 or less, The die-bonding sheet has a melt viscosity of 30 kPa·s or less at 80° C.

2. The die bond sheet according to claim 1, comprising an inorganic filler as an inorganic component, The mass ratio of the inorganic filler to the total mass of the organic component and the inorganic component is 25 mass % or less.

3. The die-bonding sheet according to claim 1 or 2, further comprising a thermosetting resin as the organic component, The thermosetting resin includes a novolac type epoxy resin.

4. The die bonding sheet according to claim 3, wherein: The novolac epoxy resin has a softening point of 85° C. or less.

5. The die bond sheet according to claim 3, comprising an inorganic filler as an inorganic component, The mass ratio of the novolac epoxy resin in the total mass of the organic component and the inorganic component is 30 mass % or more.

6. A dicing die bonding film comprising: A dicing tape having an adhesive layer laminated on a base layer, and a die bonding sheet laminated on the adhesive layer of the dicing tape, The die-bonding sheet is the die-bonding sheet according to claim 1 or 2.

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