Wafer heating disc and semiconductor production line

Abstract

The invention discloses a wafer heating disc and a semiconductor production line, and belongs to the field of semiconductor processing. The wafer heating disc comprises a vacuum adsorption platform, a heating platform, a heat insulation platform, an air exhaust connector and a controller. And a heating platform is arranged on the lower surface of the vacuum adsorption platform. The heat insulation platform is provided with a first heat insulation layer and a second heat insulation layer, the second heat insulation layer is provided with multiple spring pressing blocks along the edge, and one ends of the spring pressing blocks abut against the upper surface of the vacuum adsorption platform. The first and second heat insulation layers are respectively used for heat insulation and heat dissipation, and the spring pressing block limits heating expansion of the vacuum adsorption platform. The platforms and the heat insulation layer are provided with corresponding first, second, third and fourth channels respectively to form a vacuum channel, the vacuum groove is communicated with the vacuum channel, and one end of the fourth channel is connected with an air exhaust connector. The controller is connected with the heating platform and the air exhaust connector and used for adjusting the heating state and the air pressure in the vacuum channel, the flatness of the surface of the wafer heating disc under the high-temperature condition can be improved, and the bonding effect is improved.

Description

Technical Field

[0001] The present application relates to the field of semiconductor processing, and in particular to a wafer heating plate and a semiconductor production line. Background Art

[0002] In the existing patch bonding process, a wafer heating plate is required to heat the wafer, and the flatness of the surface of the wafer heating plate is required to be high during the heating process. The surface of the existing wafer heating plate is greatly deformed due to heating, resulting in poor flatness, which cannot meet the requirements of high-precision patch bonding. Therefore, how to increase the flatness of the surface of the wafer heating plate under high temperature conditions to improve the bonding effect is a technical problem that needs to be solved urgently. Summary of the invention

[0003] The present application aims to solve at least one of the technical problems existing in the prior art. To this end, the present application proposes a wafer heating plate and a semiconductor production line, which can increase the flatness of the surface of the wafer heating plate under high temperature conditions and improve the bonding effect.

[0004] In order to achieve the above purpose, this application adopts the following technical solutions: In a first aspect, the present application provides a wafer heating plate, comprising: A vacuum adsorption platform, wherein the vacuum adsorption platform is provided with at least one vacuum groove, and the upper surface of the vacuum adsorption platform is used for placing a wafer; A heating platform, wherein the heating platform is arranged on the lower surface of the vacuum adsorption platform; A heat-insulating platform, the heat-insulating platform comprising a first heat-insulating layer and a second heat-insulating layer, the first heat-insulating layer being arranged on the lower surface of the heating platform, the second heat-insulating layer being arranged on the lower surface of the first heat-insulating layer, a plurality of spring pressure blocks being arranged at intervals along the edge of the second heat-insulating layer, one end of the spring pressure block being in contact with the upper surface of the vacuum adsorption platform, the first heat-insulating layer being used to reduce the heat leakage of the heating platform, the second heat-insulating layer being used to dissipate the excess heat of the first heat-insulating layer, and the spring pressure block being used to limit the expansion degree of the vacuum adsorption platform when heated; A vacuum joint, wherein the vacuum adsorption platform, the heating platform, the first thermal insulation layer, and the second thermal insulation layer are respectively provided with a first channel, a second channel, a third channel, and a fourth channel that are connected to each other, so as to form a vacuum channel in combination, each of the vacuum grooves is connected to at least one of the vacuum channels, and an end of the fourth channel away from the third channel is connected to the vacuum joint; A controller is connected to the heating platform and to the air extraction joint through an air pipe, and is used to control the heating state of the heating platform and the air pressure in the vacuum channel.

[0005] According to the wafer heating plate of the first aspect embodiment of the present application, at least the following beneficial effects are achieved: the wafer is stably adsorbed by the vacuum adsorption platform, the probability of displacement or uneven deformation of the wafer during heating is reduced, and the wafer surface is ensured to remain flat. The heating platform is connected to the vacuum adsorption platform to provide a uniform heating source. The heat insulation platform is composed of a first heat insulation layer and a second heat insulation layer. The first heat insulation layer effectively reduces the heat leakage of the heating platform, while the second heat insulation layer adjusts the heat distribution by emitting excess heat. The edge of the second heat insulation layer is equipped with a plurality of spring pressure blocks at intervals. One end of these spring pressure blocks is in contact with the vacuum adsorption platform, which can limit the expansion degree of the vacuum adsorption platform when heated from different directions, avoiding uneven expansion affecting the surface flatness, thereby affecting the bonding effect. Each platform is interconnected through the first channel, the second channel, the third channel and the fourth channel to form a vacuum channel, the vacuum groove is connected to the vacuum channel, the exhaust joint is connected to the controller through the fourth channel, and the controller controls the air pressure state in the vacuum channel through the air pipe, so that the vacuum adsorption platform can stably adsorb the wafer, and the controller can also adjust the heating state of the heating platform to achieve precise heating control. Compared with the prior art, the embodiment of the present application can increase the flatness of the surface of the wafer heating plate under high temperature conditions and improve the bonding effect. Therefore, the embodiment of the present application solves the technical problem of how to increase the flatness of the surface of the wafer heating plate under high temperature conditions to improve the bonding effect.

[0006] According to some embodiments of the first aspect of the present application, a plurality of protrusions are arranged at intervals along the edge of the second thermal insulation layer, the spring pressure block is arranged on the upper surface of the protrusion, the spring pressure block includes a fixed part, a movable part and a spring, the top of the fixed part is arranged as a limit block, the lower surface of the limit block is arranged with a connecting rod, the cross-section of the connecting rod is smaller than the cross-section of the limit block, the bottom of the fixed part is connected to the upper surface of the protrusion, the top of the movable part is convexly arranged to form a protrusion, the protrusion abuts against the upper surface of the vacuum adsorption platform, the top of the movable part is concavely arranged to form a first limit groove, the cross-section of the first limit groove matches the cross-section of the limit block, the bottom of the first limit groove is concavely arranged to form a connecting channel, the cross-section of the connecting channel is smaller than the cross-section of the first limit groove and matches the cross-section of the connecting rod, the first end of the spring abuts against the lower surface of the limit block, and the second end of the spring abuts against the upper surface of the first limit groove.

[0007] According to some embodiments of the first aspect of the present application, the vacuum adsorption platform is provided with second limiting grooves at intervals along the edge, the second limiting grooves match the protrusions, the bottom of the second limiting grooves is concavely arranged to form a spherical limiting groove, the lower surface of the protrusion is convexly arranged to form a spherical bump, and the spherical limiting grooves match the spherical bumps.

[0008] According to some embodiments of the first aspect of the present application, the heating platform includes a heated outer carbon film, a stainless steel heat transfer plate, a graphite sheet, a brass heat conductive plate, and a stainless steel cover plate. The heated outer carbon film is arranged on the lower surface of the vacuum adsorption platform, the stainless steel heat transfer plate is arranged on the lower surface of the heated outer carbon film, the graphite sheet is arranged on the lower surface of the stainless steel heat transfer plate, the brass heat conductive plate is arranged on the lower surface of the graphite sheet, and the stainless steel cover plate is arranged on the lower surface of the brass heat conductive plate.

[0009] According to some embodiments of the first aspect of the present application, the heating platform also includes a thermocouple, and a third limiting groove is provided on the upper surface of the stainless steel heat transfer plate, and the third limiting groove is used to embed the thermocouple, and the thermocouple is used to detect the heating temperature and transmit it to the controller.

[0010] According to some embodiments of the first aspect of the present application, at least two thermocouples are provided, and the controller is used for: Obtaining current temperatures of the plurality of thermocouples; Processing a plurality of the current temperatures to obtain an average temperature; When the average temperature is lower than a preset temperature threshold, turning on the heating platform; When the average temperature is higher than or equal to a preset temperature threshold, the heating platform is turned off.

[0011] According to some embodiments of the first aspect of the present application, the material of the vacuum adsorption platform is set to silicon oxide, and the material of the first thermal insulation layer is set to zirconium oxide.

[0012] According to some embodiments of the first aspect of the present application, a water channel is provided in the second thermal insulation layer, and the water channel is used to pass flowing water to dissipate heat of the first thermal insulation layer.

[0013] According to some embodiments of the first aspect of the present application, a fixing protrusion is provided on the peripheral side of the second thermal insulation layer, and the fixing protrusion is provided with a fixing hole, and the fixing hole is used to pass an external fixing member to fix it to an external device.

[0014] According to some embodiments of the first aspect of the present application, In a second aspect, the present application provides a semiconductor production line, comprising the wafer heating plate described in the embodiment of the first aspect of the present application.

[0015] The present application is further described below in conjunction with the accompanying drawings and embodiments. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 This is a schematic structural diagram of an embodiment of a wafer heating plate of the present application; Figure 2A top view of an embodiment of a wafer heating plate of the present application; Figure 3 A cross-sectional view of an embodiment of a wafer heating plate of the present application; Figure 4 This is a schematic structural diagram of an embodiment of the vacuum adsorption platform of the present application; Figure 5 An exploded view of an embodiment of a heating platform of the present application; Figure 6 This is a schematic structural diagram of an embodiment of the second heat insulation layer of the present application; Figure 7 A cross-sectional view of an embodiment of the second thermal insulation layer of the present application; Figure 8 A cross-sectional view of an embodiment of a spring pressure block of the present application; Fig. 9 It is a cross-sectional view of an embodiment of the movable part of the spring pressure block of the present application.

[0017] Reference numerals: The vacuum adsorption platform 100, the vacuum groove 110, the second limiting groove 120, the spherical limiting groove 121, Heating platform 200, heating outer carbon film 210, stainless steel heat transfer plate 220, graphite sheet 230, brass heat conduction plate 240, stainless steel cover plate 250, third limiting groove 260, thermocouple 270, The heat insulation platform 300, the first heat insulation layer 310, the second heat insulation layer 320, the protrusion 330, the water channel 340, the fixing protrusion 350, the fixing hole 351, The spring pressure block 400, the fixing portion 410, the limiting block 411, the connecting rod 412, the movable portion 420, the protruding portion 421, the spherical protrusion 422, the first limiting groove 423, the connecting channel 424, the spring 430, Vacuum connector 500, The vacuum channel 600 , the first channel 610 , the second channel 620 , the third channel 630 , and the fourth channel 640 . DETAILED DESCRIPTION

[0018] The embodiments of the present application are described in detail below, and examples of the embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present application, and cannot be understood as limiting the present application.

[0019] In the description of the present application, it should be understood that descriptions involving orientation, such as up, down, front, back, left, and right, and the orientation or positional relationship indicated are based on the orientation or positional relationship shown in the accompanying drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present application.

[0020] In the description of this application, "several" means one or more, "more" means more than two, "greater than", "less than", "exceed", etc. are understood to exclude the number itself, and "above", "below", "within", etc. are understood to include the number itself. If there is a description of "first" or "second", it is only used for the purpose of distinguishing technical features, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features or implicitly indicating the order of the indicated technical features.

[0021] In the description of this application, unless otherwise clearly defined, terms such as setting, installing, connecting, etc. should be understood in a broad sense, and technicians in the relevant technical field can reasonably determine the specific meanings of the above terms in this application based on the specific content of the technical solution.

[0022] The embodiments of the present application are further described below in conjunction with the accompanying drawings.

[0023] Reference Figure 1 , 2As shown in Figure 3, the wafer heating plate includes a vacuum adsorption platform 100, a heating platform 200, a thermal insulation platform 300, an exhaust connector 500 and a controller (not marked in the figure). The vacuum adsorption platform 100 is provided with at least one vacuum groove 110, and the upper surface of the vacuum adsorption platform 100 is used to place the wafer; the heating platform 200 is arranged on the lower surface of the vacuum adsorption platform 100; the thermal insulation platform 300 includes a first thermal insulation layer 310 and a second thermal insulation layer 320, the first thermal insulation layer 310 is arranged on the lower surface of the heating platform 200, and the second thermal insulation layer 320 is arranged on the lower surface of the first thermal insulation layer 310, and the second thermal insulation layer 320 is arranged along the edge of the second thermal insulation layer 320. A plurality of spring pressure blocks 400 are arranged at intervals, and one end of the spring pressure block 400 abuts against the upper surface of the vacuum adsorption platform 100, and the first thermal insulation layer 310 is used to reduce the heat leakage of the heating platform 200, and the second thermal insulation layer 320 is used to dissipate the excess of the first thermal insulation layer 310 Heat, the spring pressure block 400 is used to limit the expansion degree of the vacuum adsorption platform 100 when heated; the vacuum adsorption platform 100, the heating platform 200, the first insulation layer 310, and the second insulation layer 320 are respectively provided with a first channel 610, a second channel 620, a third channel 630, and a fourth channel 640 that are connected to each other, thereby forming a vacuum channel 600 in combination, each vacuum groove 110 is connected to at least one vacuum channel 600, and the end of the fourth channel 640 away from the third channel 630 is connected to the exhaust joint 500; the controller is respectively connected to the heating platform 200 and connected to the exhaust joint 500 through the air pipe, and the controller is used to control the heating state of the heating platform 200 and the air pressure condition in the vacuum channel 600.

[0024] The above-mentioned embodiment stably adsorbs the wafer through the vacuum adsorption platform 100, reduces the probability of displacement or uneven deformation of the wafer during the heating process, and ensures that the surface of the wafer remains flat. The heating platform 200 provides a uniform heating source by connecting to the vacuum adsorption platform 100. The thermal insulation platform 300 is composed of a first thermal insulation layer 310 and a second thermal insulation layer 320. The first thermal insulation layer 310 effectively reduces the heat leakage of the heating platform 200, while the second thermal insulation layer 320 adjusts the heat distribution by dissipating excess heat. The edge of the second thermal insulation layer 320 is equipped with a plurality of spring pressure blocks 400 at intervals. One end of these spring pressure blocks 400 is in contact with the vacuum adsorption platform 100, which can limit the expansion degree of the vacuum adsorption platform 100 when heated from different directions, so as to avoid uneven expansion affecting the surface flatness and thus affecting the bonding effect. Each platform is interconnected through the first channel 610, the second channel 620, the third channel 630 and the fourth channel 640 to form a vacuum channel 600. The vacuum groove 110 is connected to the vacuum channel 600. The vacuum joint 500 is connected to the controller through the fourth channel 640. The controller controls the air pressure state in the vacuum channel 600 through the air pipe, so that the vacuum adsorption platform 100 can stably adsorb the wafer. The controller can also adjust the heating state of the heating platform 200 to achieve precise heating control. Compared with the prior art, the embodiment of the present application can increase the flatness of the surface of the wafer heating plate under high temperature conditions and improve the bonding effect.

[0025] For example, Figure 1 , 2As shown in Figure 3, five vacuum grooves 110, four vacuum channels 600 and four vacuum taps are set as an example. The four vacuum joints 500 distributed in the clockwise direction along the vacuum adsorption platform 100 include a first vacuum joint 500, a second vacuum joint 500, a third vacuum joint 500 and a fourth vacuum joint 500. The five vacuum grooves 110 gradually increase in length from the inside to the outside around the center of the vacuum adsorption platform 100. Among the five vacuum channels 600, the channel openings of two vacuum channels 600 are located in the center of the smallest vacuum groove 110, and the fourth channels 640 of the two vacuum channels 600 are respectively connected to the second vacuum joint 500 and the fourth vacuum joint 500. Of the remaining two vacuum channels 600, one vacuum channel 600 is connected to two vacuum grooves 110 close to the smallest vacuum groove 110, and the fourth channel 640 of the vacuum channel 600 is connected to the first exhaust connector 500; the other vacuum channel 600 is connected to two vacuum grooves 110 away from the smallest vacuum groove 110, and the fourth channel 640 of the vacuum channel 600 is connected to the third exhaust connector 500. The two vacuum channels 600 are arranged to cooperate with the smallest vacuum groove 110 to adsorb the center of the wafer, and at the same time cooperate with the other two vacuum channels 600 and the four vacuum grooves 110 to adsorb the part outside the center of the wafer, so that the wafer is adsorbed more firmly, the fit and stability between the wafer and the vacuum adsorption platform 100 are improved, and the wafer can be heated evenly.

[0026] The embodiment of the present application does not limit the number of spring pressure blocks 400, and those skilled in the art may adjust it according to actual conditions. Figure 1 , 2 As shown, six spring pressing blocks 400 are set as an example. The six spring pressing blocks 400 are arranged at equal intervals on the second heat insulation layer 320, and the first ends of the six spring pressing blocks 400 are all in contact with the upper surface of the vacuum adsorption platform 100. When the heating platform 200 heats the vacuum adsorption platform 100, the vacuum adsorption platform 100 is deformed due to the increase in temperature. The six spring pressing blocks 400 can press the upper surface of the vacuum adsorption platform 100, so that the vacuum adsorption platform 100 remains flat, thereby improving the flatness of the surface of the vacuum adsorption platform 100.

[0027] Understandably, referring to Figure 6 , 8As shown in FIG. 9 , a plurality of protrusions 330 are arranged at intervals along the edge of the second heat insulation layer 320. A spring pressure block 400 is arranged on the upper surface of the protrusion 330. The spring pressure block 400 includes a fixed portion 410, a movable portion 420 and a spring 430. The top of the fixed portion 410 is arranged as a limit block 411. The lower surface of the limit block 411 is provided with a connecting rod 412. The cross section of the connecting rod 412 is smaller than the cross section of the limit block 411. The bottom of the fixed portion 410 is connected to the upper surface of the protrusion 330. The top of the movable portion 420 is protruding to form a protrusion 421. The protrusion 421 is in contact with the upper surface of the vacuum adsorption platform 100, the top of the movable part 420 is recessed to form a first limiting groove 423, the cross section of the first limiting groove 423 matches the cross section of the limiting block 411, the bottom of the first limiting groove 423 is recessed to form a connecting channel 424, the cross section of the connecting channel 424 is smaller than the cross section of the first limiting groove 423, and matches the cross section of the connecting rod 412, the first end of the spring 430 is in contact with the lower surface of the limiting block 411, and the second end of the spring 430 is in contact with the upper surface of the first limiting groove 423. In this embodiment, the fixed part 410 provides stable support through the elastic support of the spring 430, and through the cooperation of the limiting block 411, the first limiting groove 423 and the connecting rod 412, it is ensured that the movable part 420 only moves in the vertical direction, thereby enhancing the structural stability. The resilience of the spring 430 ensures that the protrusion 421 is in flexible contact with the vacuum adsorption platform 100, achieving uniform force. When the vacuum adsorption platform 100 expands due to temperature increase, the elastic structure formed by the fixed part 410, the spring 430 and the movable part 420 can keep the vacuum adsorption platform 100 flat, thereby improving the flatness of the vacuum adsorption platform 100 under high temperature conditions.

[0028] Understandably, referring to Figure 4 , 8 As shown, the vacuum adsorption platform 100 is provided with second limiting grooves 120 at intervals along the edge, the second limiting grooves 120 match the protrusions 421, the bottom of the second limiting grooves 120 is concavely arranged to form a spherical limiting groove 121, the lower surface of the protrusion 421 is convexly arranged to form a spherical bump 422, and the spherical limiting grooves 121 match the spherical bump 422. In this embodiment, multi-directional limiting is achieved through the cooperation between the spherical bump 422 and the spherical limiting grooves 121, the lateral slip of the protrusion 421 is prevented, and the ability of the spherical bump 422 to limit the expansion of the vacuum adsorption platform 100 is improved. At the same time, the spherical structure allows for slight angle adjustment, adapts to slight displacement and vibration, and makes the vacuum adsorption platform 100 more evenly stressed.

[0029] Understandably, referring to Figure 1 , 5As shown, the heating platform 200 includes a heating outer carbon film 210, a stainless steel heat transfer plate 220, a graphite sheet 230, a brass heat conductive plate 240, and a stainless steel cover plate 250. The heating outer carbon film 210 is disposed on the lower surface of the vacuum adsorption platform 100, the stainless steel heat transfer plate 220 is disposed on the lower surface of the heating outer carbon film 210, the graphite sheet 230 is disposed on the lower surface of the stainless steel heat transfer plate 220, the brass heat conductive plate 240 is disposed on the lower surface of the graphite sheet 230, and the stainless steel cover plate 250 is disposed on the lower surface of the brass heat conductive plate 240. This embodiment improves heating efficiency and temperature uniformity through the combination of multiple layers of heat conductive materials. The heated outer carbon film 210 allows the vacuum adsorption platform 100 to be heated evenly, reducing local overheating or temperature difference problems. The stainless steel heat transfer plate 220 enhances the uniformity of heat conduction. The graphite sheet 230 improves the thermal conductivity and reduces thermal stress. The brass heat conduction plate 240 further optimizes the heat transfer effect. The stainless steel cover plate 250 protects the overall structure and enhances durability. The overall coordination allows the heating platform 200 to be heated evenly, with high thermal efficiency, and reduce the impact of temperature differences.

[0030] Understandably, referring to Figure 1 , 5 As shown, the heating platform 200 also includes a thermocouple 270. A third limiting groove 260 is provided on the upper surface of the stainless steel heat transfer plate 220. The third limiting groove 260 is used to embed the thermocouple 270. The thermocouple 270 is used to detect the heating temperature and transmit it to the controller. In this embodiment, by providing the third limiting groove 260 on the stainless steel heat transfer plate 220, it is ensured that the thermocouple 270 is firmly embedded and accurately detects the heating temperature, and transmits data to the controller in real time, thereby achieving accurate temperature control and improving heating efficiency and stability.

[0031] It is understandable that at least two thermocouples 270 are provided, and the controller is used to: obtain the current temperature of multiple thermocouples 270; process multiple current temperatures to obtain an average temperature; when the average temperature is lower than a preset temperature threshold, turn on the heating platform 200; when the average temperature is higher than or equal to the preset temperature threshold, turn off the heating platform 200. In this embodiment, the temperature is monitored in real time by multiple thermocouples 270, and the average temperature is calculated by the controller to achieve precise temperature control. When the temperature is lower than the preset threshold, the controller controls the heating platform 200 to turn on, and when the temperature reaches or exceeds the threshold, the heating platform 200 is controlled to turn off the heating to ensure temperature stability. Therefore, the heating efficiency is improved, local overheating or temperature fluctuations are avoided, and at the same time, the energy utilization rate is improved and energy consumption is reduced.

[0032] For example, Figure 1As shown, take setting two thermocouples 270 as an example. The two thermocouples 270 are set at different positions of the heating platform 200, respectively monitoring the temperature of different positions of the heating platform 200, and transmitting the data to the controller. The controller processes the temperature data of the two thermocouples 270 to calculate their average temperature. When the average temperature is lower than the preset temperature threshold, the controller will automatically turn on the heating platform 200 for heating; and when the average temperature reaches or exceeds the preset threshold, the controller will turn off the heating platform 200.

[0033] It is understandable that the material of the vacuum adsorption platform 100 is set to silicon oxide, and the material of the first thermal insulation layer 310 is set to zirconium oxide. Silicon oxide allows the flatness of the vacuum adsorption platform 100 to reach 3μm, greatly improving the flatness of the vacuum adsorption platform 100, thereby making wafer processing more precise and of higher quality. Using zirconium oxide as the material of the first thermal insulation layer 310 makes the first thermal insulation layer 310 have low thermal conductivity, can effectively isolate heat, reduce heat conduction to the second thermal insulation layer 320, and reduce the probability of damage to external equipment in contact with the second thermal insulation layer 320 due to overheating of the second thermal insulation layer 320; zirconium oxide can withstand extremely high temperatures, can work stably in high temperature environments, is not easy to deform or damage, and also has good corrosion resistance and chemical stability. It can maintain performance even in extreme chemical environments, thereby extending the life of the first thermal insulation layer 310.

[0034] Understandably, referring to Figure 7 As shown, a water channel 340 is provided in the second thermal insulation layer 320, and the water channel 340 is used to pass flowing water to dissipate the heat of the first thermal insulation layer 310. In this embodiment, by providing a water channel 340 in the second thermal insulation layer 320, the heat of the first thermal insulation layer 310 is effectively dissipated by utilizing the heat exchange characteristics of flowing water, thereby reducing the temperature and preventing heat accumulation. The continuous flow of water enhances the conduction and dissipation of heat, improves the overall heat dissipation efficiency, and reduces the risk of damage to external equipment in contact with the second thermal insulation layer 320 due to overheating of the second thermal insulation layer 320.

[0035] For example, Figure 7 As shown, the water channel 340 is symmetrically distributed in a serpentine shape in the second insulation layer 320, and the water channel 340 basically covers most of the second insulation layer 320, so that the circulating water can flow evenly through the inside of the second insulation layer 320, which can dissipate more heat and improve the heat dissipation performance of the second insulation layer 320.

[0036] Understandably, referring to Figure 6As shown, the second thermal insulation layer 320 is provided with a fixing protrusion 350 on the circumference thereof, and the fixing protrusion 350 is provided with a fixing hole 351, and the fixing hole 351 is used to pass an external fixing member to fix the second thermal insulation layer 320 to an external device. In this embodiment, by providing the fixing protrusion 350 and the fixing hole 351 on the circumference of the second thermal insulation layer 320, it is convenient to firmly mount the second thermal insulation layer 320 to an external device through an external fixing member, so that the entire wafer thermal insulation plate can be fixed to the external device, thereby improving stability.

[0037] The present embodiment does not limit the number of fixing protrusions 350 and fixing holes 351, and those skilled in the art may adjust the number according to actual conditions. Figure 5 As shown, three fixing protrusions 350 are evenly arranged on the circumference of the second heat insulation plate, and the intervals between the three fixing protrusions 350 are equal. The triangular structure formed by the three fixing protrusions 350 can make the second heat insulation plate more firmly connected to the external equipment.

[0038] The semiconductor production line of the second embodiment of the present application includes the wafer heating plate of the first embodiment of the present application, which can increase the flatness of the surface of the wafer heating plate under high temperature conditions.

[0039] The embodiments of the present application have been described in detail above in conjunction with the accompanying drawings, but the present application is not limited to the above embodiments, and various changes can be made within the knowledge scope of ordinary technicians in the technical field without departing from the purpose of the present application.

Claims

1. A wafer heating plate, characterized in that: include: A vacuum adsorption platform, wherein the vacuum adsorption platform is provided with at least one vacuum groove, and the upper surface of the vacuum adsorption platform is used for placing a wafer; A heating platform, wherein the heating platform is arranged on the lower surface of the vacuum adsorption platform; A heat-insulating platform, the heat-insulating platform comprising a first heat-insulating layer and a second heat-insulating layer, the first heat-insulating layer being arranged on the lower surface of the heating platform, the second heat-insulating layer being arranged on the lower surface of the first heat-insulating layer, a plurality of spring pressure blocks being arranged at intervals along the edge of the second heat-insulating layer, one end of the spring pressure block being in contact with the upper surface of the vacuum adsorption platform, the first heat-insulating layer being used to reduce the heat leakage of the heating platform, the second heat-insulating layer being used to dissipate the excess heat of the first heat-insulating layer, and the spring pressure block being used to limit the expansion degree of the vacuum adsorption platform when heated; A vacuum joint, wherein the vacuum adsorption platform, the heating platform, the first thermal insulation layer, and the second thermal insulation layer are respectively provided with a first channel, a second channel, a third channel, and a fourth channel that are connected to each other, so as to form a vacuum channel in combination, each of the vacuum grooves is connected to at least one of the vacuum channels, and an end of the fourth channel away from the third channel is connected to the vacuum joint; A controller is connected to the heating platform and to the air extraction joint through an air pipe, and is used to control the heating state of the heating platform and the air pressure in the vacuum channel.

2. The wafer heating plate according to claim 1, characterized in that: The second heat insulation layer is provided with a plurality of protrusions at intervals along the edge, the spring pressure block is provided on the upper surface of the protrusion, the spring pressure block comprises a fixed part, a movable part and a spring, the top of the fixed part is provided with a limit block, the lower surface of the limit block is provided with a connecting rod, the cross section of the connecting rod is smaller than the cross section of the limit block, the bottom of the fixed part is connected to the upper surface of the protrusion, the top of the movable part is convexly provided to form a protrusion, the protrusion abuts against the upper surface of the vacuum adsorption platform, the top of the movable part is concavely provided to form a first limit groove, the cross section of the first limit groove matches the cross section of the limit block, the bottom of the first limit groove is concavely provided to form a connecting channel, the cross section of the connecting channel is smaller than the cross section of the first limit groove and matches the cross section of the connecting rod, the first end of the spring abuts against the lower surface of the limit block, and the second end of the spring abuts against the upper surface of the first limit groove.

3. The wafer heating plate according to claim 2, characterized in that: The vacuum adsorption platform is provided with second limiting grooves at intervals along the edge, the second limiting grooves match the protrusions, the bottom of the second limiting grooves is concavely arranged to form a spherical limiting groove, the lower surface of the protrusion is convexly arranged to form a spherical bump, and the spherical limiting grooves match the spherical bumps.

4. The wafer heating plate according to claim 1, characterized in that: The heating platform includes a heated outer carbon film, a stainless steel heat transfer plate, a graphite sheet, a brass heat conduction plate, and a stainless steel cover plate. The heated outer carbon film is arranged on the lower surface of the vacuum adsorption platform, the stainless steel heat transfer plate is arranged on the lower surface of the heated outer carbon film, the graphite sheet is arranged on the lower surface of the stainless steel heat transfer plate, the brass heat conduction plate is arranged on the lower surface of the graphite sheet, and the stainless steel cover plate is arranged on the lower surface of the brass heat conduction plate.

5. The wafer heating plate according to claim 4, characterized in that: The heating platform also includes a thermocouple. The upper surface of the stainless steel heat transfer plate is provided with a third limiting groove, and the third limiting groove is used to embed the thermocouple. The thermocouple is used to detect the heating temperature and transmit it to the controller.

6. The wafer heating plate according to claim 5, characterized in that: The thermocouples are provided with at least two, and the controller is used for: Obtaining current temperatures of the plurality of thermocouples; Processing a plurality of the current temperatures to obtain an average temperature; When the average temperature is lower than a preset temperature threshold, turning on the heating platform; When the average temperature is higher than or equal to a preset temperature threshold, the heating platform is turned off.

7. The wafer heating plate according to claim 1, characterized in that: The material of the vacuum adsorption platform is set to silicon oxide, and the material of the first heat insulation layer is set to zirconium oxide.

8. The wafer heating plate according to claim 1, characterized in that: A water channel is provided in the second heat-insulating layer, and the water channel is used to pass flowing water to dissipate the heat of the first heat-insulating layer.

9. The wafer heating plate according to claim 1, characterized in that: A fixing protrusion is provided on the peripheral side of the second heat insulating layer. The fixing protrusion is provided with a fixing hole. The fixing hole is used for passing an external fixing member to fix with an external device.

10. A semiconductor production line, characterized in that: Comprising a wafer heating plate as described in any one of claims 1 to 9.

Images