Low-voltage large-current power distribution method based on double-loop GANNEMT-magnetic latching relay control

Abstract

A low-voltage large-current power distribution method based on double-loop GANNEMT-magnetic latching relay control is characterized in that a GaN HEMT power transistor is used as a main switch tube, double GAN HEMT are connected in parallel and are bridged between a magnetic latching relay and a low-voltage power supply output positive line, a D pole of the GAN HEMT is connected with the low-voltage power supply output positive line, an S pole of the GAN HEMT is connected with a low-voltage power supply input end, and the magnetic latching relay is connected with a high-voltage power supply output positive line. A G pole of the GAN HEMT is connected with a contact end of a magnetic latching relay (4) through a divider resistor, a switch end of the magnetic latching relay (4) is grounded through a low-voltage power supply protection circuit, and a setting coil (9) of the magnetic latching relay (4) is connected between a relay power-on voltage circuit (5) and a power distribution control switch-on instruction circuit (7) after being connected with a group of diodes in parallel. And a reset coil (10) of the magnetic latching relay (4) is connected in parallel with the other group of diodes and then is connected between the relay power-on voltage circuit (5) and the power distribution control disconnection instruction circuit (8). Two power distribution circuits including a power distribution instruction receiving circuit and a power distribution connection circuit are effectively controlled and coordinated, and low-voltage large-current power distribution is achieved.

Description

Technical Field

[0001] The present invention belongs to the field of IPC classification H02M for conversion between AC and AC, between AC and DC, or between DC and DC, and for equipment used with power supplies or similar power supply systems, as well as control or regulation technology, and more particularly relates to an innovative technology for a low-voltage and high-current power distribution control method suitable for a low-loss aerospace power distribution controller. Background Art

[0002] The mission of the aerospace power supply and distribution system is to safely and reliably distribute the electrical energy generated by the power system to various electrical equipment on the satellite, and to control the power distribution to each electrical equipment.

[0003] The distribution voltage of aerospace power supply and distribution system is not uniform, but is designed and selected according to specific needs. At present, the distribution voltage used in spacecraft covers a wide range from low voltage to high voltage. For example, the primary bus distribution voltage of my country's spacecraft includes 100V bus, 42V bus and 28V bus, and the commonly used voltage of secondary distribution is 5V, ±12V, etc. Some strategic active defense weapon platforms even require a constant power of several megawatts, a detonation power of several hundred megawatts and a voltage of at least 100kV. For example, in the solar power supply system, the solar array is the power source and the battery is the energy storage device. The power generated by the solar array and the battery group is modulated to the rated bus voltage under the action of the power regulation and control system. For satellites with power requirements exceeding 25kW, in order to optimize the system quality, a high-voltage solar array is required. In the LEO low earth orbit, considering factors such as leakage current and arc discharge in the high-density space plasma environment, the system voltage is limited to less than 200V. For GEO geosynchronous orbit, due to the low plasma density, it is feasible to operate at high voltage after reaching orbit. The chip integration of on-board power loads is getting higher and higher, requiring lower power supply voltage while increasing current.

[0004] For aerospace power supply and distribution systems with power distribution voltages ranging from +28V, +12V, and +5V, the power distribution switches in the power distribution circuit usually include magnetic latching relays and PMOS tubes. As the rated current increases, the price of the relays configured in the equipment also increases significantly, resulting in extremely expensive equipment costs. In addition, high-current relays will generate more heat when working, which requires a larger volume to overcome and eliminate. Therefore, the corresponding solution is that for high-current power distribution, a small-current relay is usually used to receive the power distribution controller command, and the PMOS tube bears the high current. However, the low-voltage power distribution technology uses a single relay and does not connect the PMOS tube, because in order for the PMOS tube to be turned on and bear the high current, its gate-source voltage needs to be above 10V. If other corresponding measures are not taken for the situation below 10V, it cannot meet the high current requirements of the electric furnace.

[0005] However, the research found that the existing aerospace power supply and distribution system has low voltage and high current distribution technology, such as for voltage distribution below 10V, if small relays are still used to receive the instructions of the distribution controller, the circuit as shown in the attached Figure 1 As shown, since the gate-source voltage difference is too low, the PMOS tube cannot be driven to carry large currents; expensive large-size relays have to be used to carry large currents, which affects the performance of manufacturing equipment and causes high product manufacturing costs.

[0006] For this reason, there are few related improvement technologies disclosed. For example:

[0007] Patent application 201910228365.2 discloses a GaN high-current self-powered DC solid-state circuit breaker and DC power supply system, which belongs to the field of DC power supply and distribution. It is specifically composed of a main switch S and a flyback converter C. The main switch S is a solid switch S made of a wide bandgap semiconductor material gallium nitride with consistent performance parameters. 1 , S 2 ,……,S n The flyback converter C is a self-excited structure with a wide input voltage range. It relies on the voltage generated at both ends of the main switch by the large current of the fault circuit to stimulate the operation, and outputs a stable voltage to drive the parallel semiconductor solid switches to operate synchronously, disconnecting the load and the DC power supply to achieve the purpose of protecting the load and the power supply. Moreover, the circuit breaker does not require external power supply during the process of transmitting normal current and disconnecting the load.

[0008] In this type of improved technology, the gallium nitride (GaN) semiconductor material involved has the advantages of wide bandgap, high electron drift velocity, high breakdown field strength, stable chemical properties, etc. It is an ideal material for preparing high-frequency and high-power devices. The high electron mobility transistor HEMT with GaN gallium nitride semiconductor material as the substrate has the advantages of high output power density, high operating voltage and high output impedance. It plays an increasingly important role in wireless communications and is the core device of wireless communication amplifiers. There are many application technologies, such as:

[0009] Patent application 201811230522.5 relates to a GaN HEMT control circuit, including a gate voltage switching circuit and a gate voltage terminal connected to the gate pin of the GaN HEMT; the gate voltage switching circuit includes a first switch circuit, a second switch circuit and a third switch circuit; the first end of the first switch circuit is connected to the TDD switching signal, and the second end of the first switch circuit is respectively connected to the first end of the second switch circuit and the first end of the third switch circuit; the second end of the second switch circuit is connected to the gate voltage source, and the third end of the second switch circuit is connected to the gate voltage terminal; the second end of the third switch circuit is connected to the negative voltage power supply terminal, and the third end of the third switch circuit is connected to the gate voltage terminal. The TDD switching signal can control the on and off of the first switch circuit, and the on and off of the first switch circuit can control the on and off of the second switch circuit and the third switch circuit, and can switch the voltage of the gate voltage terminal; based on the above structure, the TDD uplink and downlink switching signals can be used to control the gate voltage of the GaN HEMT, so as to realize the rapid shutdown and opening of the GaN HEMT.

[0010] It can be seen that the improved technology for achieving better GaN HEMT application effects has not yet involved the low-voltage and high-current power distribution of the aforementioned aerospace power supply and distribution system. This technical problem still needs to be studied and solved. Summary of the invention

[0011] The present invention proposes a low-voltage and high-current power distribution method based on dual-circuit GANHEMT-magnetic latching relay control, which is suitable for the centralized and decentralized combined power distribution of the overall circuit subsystem of aerospace power supply. The low gate-source threshold voltage of GAN HEMT is utilized, and dual GANHEMT parallel magnetic latching relay control is set to effectively control and coordinate the two parts including the power distribution instruction receiving circuit and the power distribution connection circuit, so as to realize low-voltage and high-current power distribution and solve the above-mentioned prior art problems.

[0012] To achieve the above object, the present invention provides the following technical solutions:

[0013] The GaN HEMT power transistor is used as the main switch tube, and a dual GAN ​​HEMT is connected in parallel and connected between the magnetic latching relay and the positive line of the low-voltage power supply output. The D pole of the GAN HEMT is connected to the positive line of the low-voltage power supply output, the S pole of the GAN HEMT is connected to the input end of the low-voltage power supply, and the G pole of the GAN HEMT is connected to the contact end of the magnetic latching relay through a voltage divider resistor. The magnetic latching relay has a set coil and a reset coil. The power distribution circuit includes two parts: a power distribution instruction receiving circuit and a power distribution connection circuit. These two parts are connected to one end of the switch contact of the magnetic latching relay on the power distribution instruction receiving circuit through the gate G of the GAN HEMT device on the power distribution connection circuit. The set coil of the magnetic latching relay is connected in parallel with a group of diodes and connected between the relay power-on voltage circuit and the power distribution control opening instruction circuit. The reset coil of the magnetic latching relay is connected in parallel with another group of diodes and connected between the relay power-on voltage circuit and the power distribution control disconnection instruction circuit. The working process includes: when the power distribution command is input to the magnetic latching relay (4) and the command is received, the power distribution voltage input arrives at the GAN HEMT device (2) at the same time, the GAN HEMT device (2) is switched on, and then the power distribution voltage is output.

[0014] Among them, the set coil and reset coil in the magnetic latching relay are coils with opposite winding directions. The power distribution control on command input circuit is connected to one end of the set coil, and the power distribution control off command input circuit is connected to the same direction end of the reset coil. The power-on voltage input to the relay power-on voltage circuit is a positive voltage, which comes from the power control system. This voltage is connected to the other end of the two coils of the relay.

[0015] The power distribution command receiving circuit is composed of a magnetic latching relay, a relay energizing voltage circuit, a power distribution control on command input circuit, and a power distribution control off command input circuit. The power distribution control command is a pulse signal of the same polarity, usually at a low level, and comes from integrated electronics or a lower computer.

[0016] Among them, the distribution connection circuit B is composed of a distribution voltage input circuit, two parallel GAN ​​HEMT devices, and a distribution voltage output circuit. The distribution voltage input circuit is connected to the source S of the GAN HEMT device, and the distribution voltage input circuit is derived from the DCDC conversion output of the controller system. One end of the distribution voltage output circuit is connected to the drain D of the GAN HEMT device, and the other end is connected to the on-board load through an electrical connector to supply power to the on-board load.

[0017] Among them, when the command pulse signal is received, the relay energizes the voltage circuit and is connected to the power distribution control connection command input circuit or the power distribution control disconnection command input circuit through the set coil and the reset coil, that is, the distribution voltage end, the relay coil, and the command input end form a loop, the set coil and the reset coil are energized to generate magnetic field force, and the magnetic holding relay contacts are actuated to complete the set or reset state switching.

[0018] Among them, the power-on voltage input to the relay power-on voltage circuit is a positive voltage, which comes from inside the power control system. This voltage is connected to the other end of the two coils of the relay.

[0019] The gate G of the GAN HEMT device is connected to one end of the magnetic latching relay switch contact, and the other end of the magnetic latching relay switch contact is grounded. When a power distribution instruction is received and the magnetic latching relay switch contact is actuated, the G pole is connected to the ground, the GAN HEMT device is turned on, and the power distribution voltage input circuit is connected to the power distribution voltage output circuit through the GAN HEMT device.

[0020] A group of capacitors connected in series are respectively connected in parallel to the input ends of the GAN HEMT devices for filtering.

[0021] A switch state detection circuit is added before the distribution output end of the distribution voltage output circuit to detect whether the distribution circuit is connected. The switch state detection circuit is connected between the distribution voltage output circuit and the output switch state circuit to output a switch state signal; the switch state detection circuit is composed of a first resistor connected in parallel to three branches, wherein the first branch is connected in series with a second resistor, the second branch is connected in series with two capacitors by a third resistor, the third branch is connected in series with a fourth resistor, and the fourth resistor is connected in parallel with the third resistor, wherein the fourth resistor and the third resistor are simultaneously connected in parallel to the ground.

[0022] After the GAN HEMT device inputs the distribution voltage of 5V, it is divided by two resistors, so that when the G pole of the GAN HEMT device is grounded, the GAN HEMT gate-source voltage difference is 2.5V, which is greater than or equal to the GAN HEMT device conduction threshold voltage, and the GAN HEMT device is turned on. At the same time, a voltage regulator diode is connected in parallel between the gate G and the source S of the GAN HEMT device, and the voltage regulator value of the voltage regulator diode is 5V to prevent the GAN HEMT device from being damaged due to voltage fluctuations and other factors exceeding the rated gate-source voltage of the GAN HEMT device. A group of capacitors in series are connected in parallel at the input ends of the dual GANHEMT devices for filtering. A switch state detection circuit is added in front of the distribution output end of the distribution voltage output circuit to detect whether the distribution circuit is connected. If the distribution is connected, the output voltage is divided by the resistors in the switch state detection circuit to output a voltage of about 3V. The resistors and capacitors form an RC circuit for delay and filtering. The distribution voltage output circuit of the 5V output positive line is externally connected to a load. At the same time, the distribution voltage output circuit of the 5V output positive line outputs a 5V switch state signal through a switch state detection circuit and is connected to a lower computer.

[0023] Compared with the prior art, the present invention has the following beneficial effects:

[0024] Gallium nitride high electron mobility transistor GAN HEMT is used as a power device. The low gate-source threshold voltage of GAN HEMT is utilized. By setting up a dual GAN ​​HEMT parallel magnetic latching relay control, the two distribution circuits including the distribution command receiving circuit and the distribution connection circuit are effectively controlled and coordinated to achieve low-voltage and high-current distribution. At the same time, GAN HEMT has low conduction loss, and the distribution efficiency can be greatly improved under high current conditions. High-reliability distribution can be completed with low volume, weight and cost, which is suitable for the centralized and decentralized combined distribution of the overall circuit subsystem of aerospace power supply. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] The features and advantages of the present invention will be more clearly understood by referring to the accompanying drawings, which are schematic and should not be construed as limiting the present invention in any way.

[0026] Figure 1 This is a schematic diagram of the connection structure of the power distribution controller instruction circuit for receiving low-voltage and high-current power distribution in the existing aerospace power supply and distribution system.

[0027] Figure 2 This is a structural diagram of Example 1 of the present invention.

[0028] Figure 3 This is a structural diagram of Example 2 of the present invention.

[0029] Figure 4 This is a structural diagram of Example 3 of the present invention.

[0030] Figure 5 This is a flowchart of the working process in Example 3 of the present invention.

[0031] Reference numerals include:

[0032] 1-power distribution voltage input circuit; 2-GAN HEMT device; 3-power distribution voltage output circuit; 4-magnetic latching relay; 5-relay energizing voltage circuit; 6-ground GND circuit; 7-power distribution control on command input circuit; 8-power distribution control off command input circuit; 9-set coil; 10-reset coil; 11-switch state detection circuit; 12-RC circuit. A-power distribution command receiving circuit; B-power distribution on circuit. DETAILED DESCRIPTION

[0033] The functions of aerospace power supply and distribution system are mainly as follows:

[0034] 1) Transmit electrical energy to various electrical equipment on the satellite through a cable network.

[0035] 2) Perform power conversion to meet the power supply requirements of electrical equipment.

[0036] 3) Provide line protection in case of electrical equipment failure.

[0037] 4) Provide overload protection and power fault isolation.

[0038] The power supply and distribution subsystem is a subsystem on the satellite that generates, stores, transforms, regulates and distributes electrical energy. Its basic function is to convert light energy, nuclear energy or chemical energy into electrical energy through some physical or chemical changes, store, regulate and transform it as needed, and then supply power to various systems until the end of the life of the spacecraft. The power supply and distribution subsystem consists of two subsystems:

[0039] The primary power subsystem includes a power generation device, an energy storage device, and a power control device.

[0040] The overall circuit subsystem includes power converter, power distribution device, pyrotechnics manager and cable network.

[0041] Spacecraft power supply and distribution systems are divided into three forms:

[0042] Centralized power distribution: Only one overall first-level distributor is set up in the entire satellite, and the power distribution control points of all electrical equipment are concentrated together. The control instructions are only sent to this distributor to control the power consumption of each electrical equipment. There is also only one first-level conversion device to centrally convert the power required by each electrical equipment, so that the power supply voltage, output power, voltage stability, first-level ripple and other parameters can meet the requirements of each electrical equipment.

[0043] Distributed power distribution: The power distribution control points of each electrical equipment in the aircraft are dispersed. Control instructions need to be sent to each electrical equipment or its subsystem for power distribution control. The equipment itself or its subsystem performs power conversion to meet the requirements of the electrical equipment for various power parameters.

[0044] Combination of centralized and decentralized power distribution: It is a combination of the above two power distribution systems, which can be centralized power distribution and decentralized conversion, or centralized conversion and decentralized power distribution. The three methods have their own advantages and disadvantages, and they should be selected comprehensively according to factors such as the size of the aircraft and power requirements. For small satellites and micro-satellites, centralized power distribution is generally used, while for large spacecraft, a combination of centralized and decentralized power distribution is generally used. However, with the development of modularization, generalization, and combination of products, decentralized power distribution has become the main development direction. The distribution voltage of the aerospace power supply and distribution system is complex and changeable, which depends on many factors and design requirements. It can be seen that the continuous development of aviation, aerospace and drone technology has put forward more stringent requirements on the power supply system, that is, the power supply must have the characteristics of high power, small size and light weight.

[0045] Traditional silicon transistors can no longer meet these requirements, and high electron mobility gallium nitride power transistors (GaN HEMTs) must be used. The basic structure of gallium nitride high electron mobility transistors GaN HEMTs mainly includes a heterojunction of AlGaN and GaN, and a two-dimensional electron gas (2DEG) layer. GaN HEMT is based on an AlGaN / GaN heterojunction, in which AlGaN serves as a barrier layer and GaN serves as a channel layer. This structure uses the polarization effect to generate a high-density two-dimensional electron gas (2DEG) at the heterojunction interface. These electrons form a conductive channel under the action of an electric field, thereby achieving current conduction. AlGaN barrier layer: As part of the heterojunction, the AlGaN layer generates a two-dimensional electron gas at the interface through the polarization effect. The charge density generated by this polarization effect is very high, thereby improving the conductivity of the device. The GaN channel layer serves as the main channel for current transmission, and the two-dimensional electron gas in the GaN layer forms a conductive channel under the action of an electric field to achieve current conduction. The gate can adjust the amount of two-dimensional electron gas by controlling the gate voltage, thereby controlling the on and off of the device. The gate switches the device by depleting or injecting the two-dimensional electron gas. The working principle of GaN HEMT is based on the basic principle of field effect transistor. When a positive voltage is applied to the gate, it attracts electrons in the two-dimensional electron gas to form a conductive channel, turning on the device; when the gate voltage is zero or negative, the two-dimensional electron gas is depleted, the conductive channel disappears, and the device is turned off. This structure gives GaN HEMT high electron mobility, low on-resistance and fast switching characteristics, making it particularly suitable for high-frequency and high-power applications. Due to the high-frequency, high-power and high-temperature characteristics of GaN HEMT, it is widely used in the following fields: In power adapters, on-board charging and data centers, GaN power devices can improve the efficiency and power density of converters; due to its high-frequency characteristics, GaN HEMT has important applications in 5G base station power supplies and satellite communications; it is also widely used in the manufacture of laser diodes (LDs), used in communications, laser printing and optical storage.

[0046] In semiconductor devices, the drain-source voltage (Vds) refers to the voltage difference between the drain and source. This voltage directly affects the device's conductivity and the flow of current. The gate-source voltage (Vgs) refers to the voltage between the gate and the source, which is a key factor in determining the gate's control over the channel.

[0047] In the transistor structure, the gate (G) is a conductive layer located on the insulating layer, and its function is to control the current by changing the electric field. The source (S) is connected to one end of the N-type semiconductor, and the drain (D) is the other end. The connection between the P region and the N-type semiconductor forms the gate. On the N-type silicon wafer, the source and drain are respectively connected at both ends, and the very thin N region is called the conductive channel.

[0048] The common drain amplifier circuit, also known as a source follower, is a common transistor configuration. In this circuit, the source is used as the output terminal, while the drain is used as the input terminal. The gate is abbreviated as G, the source is abbreviated as S, and the drain is abbreviated as D. This configuration allows the circuit to have a high output impedance, so it is very useful in amplifier circuits.

[0049] The function of the gate-source voltage (Vgs) is to adjust the control strength of the gate over the conductive channel, thereby affecting the drain-source current (Ids). When Vgs increases, the gate electric field increases, making the conductive channel easier to conduct electricity, thereby increasing Ids. Conversely, when Vgs decreases, the gate electric field weakens, the channel conductivity deteriorates, and Ids decreases accordingly.

[0050] The gate-source voltage and drain-source voltage play an important role in the operation of transistors. By properly setting these two voltages, the performance of the device can be optimized and the expected circuit function can be achieved. For example, in digital circuits, the appropriate gate-source voltage can ensure that the transistor switches between the on and off states, while in analog circuits, the appropriate drain-source voltage can adjust the gain of the amplifier.

[0051] The advantage of HEMT is that it has a high carrier concentration and has a higher electron mobility due to reduced ionized impurity scattering. The combination of high carrier concentration and high electron mobility creates a high current density and low channel resistance, so its high-frequency performance is excellent and the efficiency is high, which is particularly important in high-frequency operation and switching power supply applications.

[0052] The principle of the present invention is that a current balancing control method is adopted, a GaN HEMT power transistor is used as the main switch tube, a dual GAN ​​HEMT is connected in parallel and connected across the magnetic latching relay and the low-voltage power supply output positive line, the D pole of the GAN HEMT is connected to the low-voltage power supply output positive line, the S pole of the GAN HEMT is connected to the low-voltage power supply input terminal, the G pole of the GAN HEMT is connected to the contact end of the magnetic latching relay 4 through a voltage divider resistor, and the switch end of the magnetic latching relay 4 is grounded through a low-voltage power supply protection circuit. The setting coil 9 of the magnetic latching relay 4 is connected in parallel with a group of diodes and then connected between the relay power-on voltage circuit 5 and the distribution control opening instruction circuit 7, and the reset coil 10 of the magnetic latching relay 4 is connected in parallel with another group of diodes and then connected between the relay power-on voltage circuit 5 and the distribution control disconnection instruction circuit 8.

[0053] The power distribution method of the present invention adopts gallium nitride high electron mobility transistor GAN HEMT as a power device, which ensures and improves the performance while reducing the product volume, weight and cost.

[0054] The present invention will be further described below in conjunction with the accompanying drawings and embodiments.

[0055] Although the embodiments of the present invention have been described in conjunction with the accompanying drawings, those skilled in the art may make various modifications and variations without departing from the spirit and scope of the present invention, and such modifications and variations are all within the scope defined by the appended claims.

[0056] Embodiment 1: As attached Figure 2 As shown, the power distribution circuit includes two parts: a power distribution instruction receiving circuit A and a power distribution connection circuit B. These two parts are connected to one end of the switch contact of the magnetic latching relay 4 on the power distribution instruction receiving circuit A through the gate G of the GAN HEMT device 2 on the power distribution connection circuit B.

[0057] In the embodiment of the present invention, the power distribution instruction receiving circuit A is composed of a magnetic latching relay 4, a relay power-on voltage circuit 5, a power distribution control connection instruction input circuit 7 and a power distribution control disconnection instruction input circuit 8. The power distribution control instruction is a pulse signal of the same polarity, usually a low level, which comes from integrated electronics or a lower computer. The magnetic latching relay 4 contains two coils with opposite winding directions, namely a set coil 9 and a reset coil 10. The power distribution control connection instruction input circuit 7 is connected to one end of the set coil 9, and the power distribution control disconnection instruction input circuit 8 is connected to the same direction end of the reset coil 10. The power-on voltage input by the relay power-on voltage circuit 5 is a positive voltage, which comes from the inside of the power supply control system. This voltage is connected to the other end of the two coils of the relay. When receiving the command pulse signal, the relay energizing voltage circuit 5 is connected to the power distribution control connection command input circuit 7 or the power distribution control disconnection command input circuit 8 through the setting coil 9 and the reset coil 10, that is, the distribution voltage end, the relay coil, and the command input end form a loop, the setting coil 9 and the reset coil 10 are energized to generate a magnetic field force, and the contacts of the magnetic holding relay 4 are actuated to complete the setting or resetting state switching.

[0058] In this embodiment, the power distribution connection circuit B is composed of a power distribution voltage input circuit 1, two parallel GAN ​​HEMT devices 2, and a power distribution voltage output circuit 3, wherein the power distribution voltage input circuit 1 is connected to the source S of the GAN HEMT device 2, the power distribution voltage input circuit 1 is derived from the DCDC conversion output of the controller system, one end of the power distribution voltage output circuit 3 is connected to the drain D of the GAN HEMT device 2, and the other end is connected to the on-board load through an electrical connector to supply power to the on-board load. The gate G of the GAN HEMT device 2 is connected to one end of the switch contact of the magnetic latching relay 4, and the other end of the switch contact of the magnetic latching relay 4 is grounded. When the power distribution instruction is received and the switch contact of the magnetic latching relay 4 is actuated, the G pole is connected to the ground, the GAN HEMT device 2 is turned on, and the power distribution voltage input circuit 1 is connected to the power distribution voltage output circuit 3 through the GAN HEMT device 2.

[0059] In this embodiment, until the power distribution control disconnection instruction input circuit 8 receives the corresponding power distribution "disconnection" instruction, the contact position of the magnetic latching relay 4 is restored, and the G pole of the GAN HEMT device 2 is separated from the ground. After the G pole of the GAN HEMT device 2 serving as the power distribution switch is grounded, a voltage difference is formed between the S pole and the G pole of the GAN HEMT device 2. Since the GAN HEMT device 2 has a lower conduction threshold voltage, the low voltage difference drives the GAN HEMT device 2 to conduct and complete the power distribution work. The two GAN HEMTs are connected in parallel to ensure high circuit reliability.

[0060] In this embodiment, a group of capacitors connected in series are respectively connected in parallel to the input ends of the GAN HEMT device 2 for filtering.

[0061] Preferably, the magnetic latching relay is also an automatic switch that automatically connects and disconnects the circuit. The normally closed or normally open state of the magnetic latching relay is completely dependent on the action of the permanent magnet, and the conversion of its switch state is completed by triggering a pulse electrical signal of a certain width. The magnetic latching relay contains two coils: a control coil and a holding coil. The control coil is used to realize the action of the relay, that is, to attract the moving iron core by generating a magnetic field through power-on, so that the contacts are closed; while the holding coil is used to maintain the state of the relay, and to generate a magnetic field through a continuous current to maintain the closed state of the contacts.

[0062] Preferably, the GAN HEMT module is a gallium nitride power transistor, that is, a new type of switching power supply control chip, including a base silicon board, a GaN·HEMT device is epitaxially grown on the top of the base silicon board, a LV·MOS device and a PWM+ drive circuit are grown on the top of the base silicon board, and the LV·MOS device is located on the left side of the PWM+ drive circuit. The base silicon board and the top of the LV·MOS device are fixedly installed with a second metal interconnection frame and two first metal interconnection frames. The GaN·HEMT device is selectively epitaxially grown on the base silicon board as the epitaxial material, and is processed into a depletion-type device through a standard CMOS process. During the processing of the depletion-type device, a lateral low-voltage GaN·HEMT device is simultaneously manufactured on the base silicon board, and the two realize Cascode monolithic connection; on the other hand, the PWM+ drive circuit is manufactured on the base silicon board using a CMOS process to realize the monolithic integration function, and the overall volume is small. The technical solution of this product is disclosed by patent application 202121365549.2.

[0063] Embodiment 2: As attached Figure 3As shown, a switch state detection circuit 11 is added before the distribution output end of the distribution voltage output circuit 3 to detect whether the distribution circuit is connected. The switch state detection circuit 11 is connected between the distribution voltage output circuit 3 and the output switch state circuit to output a switch state signal; the switch state detection circuit 11 is composed of a first resistor connected in parallel to three branches, wherein the first branch is connected in series with a second resistor, the second branch is connected in series with two capacitors by a third resistor, and the third branch is connected in series with a fourth resistor, and the fourth resistor is connected in parallel with the third resistor, wherein the fourth resistor and the third resistor are simultaneously connected in parallel to the ground.

[0064] In the embodiment of the present invention, if the distribution voltage input circuit 1 is connected to the distribution voltage output circuit 3 through the GAN HEMT device 2, that is, the distribution is turned on, the output voltage is divided by the resistors RB5, RB4, and RB7 in the switch state detection circuit 11, and a voltage of about 3V is output. The resistor RB1 and the capacitors CB1 and CB2 form an RC circuit for delay and filtering. The distribution voltage output circuit 3 of the 5V output positive line is connected to an external load. At the same time, the distribution voltage output circuit 3 of the 5V output positive line outputs a 5V switch state signal through the switch state detection circuit 11 and is connected to the lower computer.

[0065] Embodiment 3: The power distribution method of the present invention is used in the design of a 5V power distribution circuit of an aerospace power supply controller product. Figure 4 As shown, the controller bus voltage circuit inputs the +5V distribution voltage into the two parallel GAN ​​HEMT devices 2 via the distribution voltage input circuit 1 through the DCDC converter.

[0066] In the embodiment of the present invention, after the GAN HEMT device 2 inputs the distribution voltage of 5V, it is divided by two resistors RB2 and RB6, so that when the G pole of the GAN HEMT device 2 is grounded, the GAN HEMT gate-source voltage difference is 2.5V, which is greater than or equal to the GAN HEMT device 2 conduction threshold voltage, and the GAN HEMT device 2 is turned on. At the same time, a voltage regulator diode DB5 is connected in parallel between the gate G and the source S of the GAN HEMT device 2, and the voltage regulation value of the voltage regulator diode DB5 is 5V to prevent the GAN HEMT device 2 from being damaged due to voltage fluctuations exceeding the rated gate-source voltage of the GAN HEMT device 2. A group of capacitors in series are connected in parallel to the input ends of the dual GAN ​​HEMT device 2 for filtering. A switch state detection circuit 11 is added before the distribution output end of the distribution voltage output circuit 3 to detect whether the distribution circuit is connected. If the distribution is connected, the output voltage is divided by resistors RB5, RB4, and RB7 in the switch state detection circuit 11 to output a voltage of about 3V. Resistor RB1 and capacitors CB1 and CB2 form an RC circuit for delay and filtering. The 5V output positive line distribution voltage output circuit 3 is connected to an external load. At the same time, the 5V output positive line distribution voltage output circuit 3 outputs a 5V switch state signal through the switch state detection circuit 11 and is connected to the lower computer.

[0067] In the aforementioned Magnetic Latching Relay The selected model is 2JB1-910 / V 12 / 1 / J, relay parameters: power contact rated current is 1A, coil rated voltage is 12V, maximum value is 16V, action voltage is not more than 10V in the entire temperature range, coil impedance is 500Ω. Two voltage regulator diodes are connected in series at both ends of the relay coil, and the voltage regulation value of a single voltage regulator is 6.5V, ensuring that the input voltage does not exceed the maximum voltage that the coil can withstand and cause damage to the relay.

[0068] In the above, GAN HEMT uses Innoscience's gallium nitride device, model INN100EQ016A. The turn-on threshold voltage of this model of GAN HEMT is 0.8~2.5V, and the maximum rated gate-source voltage is -4V and 6V.

[0069] In the embodiment of the present invention, the flow chart is as shown in the attached Figure 5As shown, the working process includes: the working process includes: when the power distribution command is input to the magnetic latching relay 4 and the power distribution voltage input arrives at the GAN HEMT device 2 at the same time, the switch of the GAN HEMT device 2 is turned on, and then, when the power distribution voltage is output, the power distribution output voltage is detected. After the magnetic latching relay 4 receives the corresponding power distribution control command, the setting coil 9 and the reset coil 10 are energized to close the contact switch, one end of the contact of the magnetic latching relay 4 is connected to the G pole of the GAN HEMT device 2, and the other end of the magnetic latching relay 4 is grounded. The contact switch of the magnetic latching relay 4 is closed, so that the G pole of the connected GAN HEMT device 2 is grounded, until the corresponding power distribution "disconnect" command is received, the contact position of the magnetic latching relay 4 is restored, and the G pole of the GAN HEMT device 2 is separated from the grounding circuit. After the G pole of the GAN HEMT device 2 serving as a power distribution switch is grounded, a gate-source voltage difference is formed between the source S and the gate G of the GAN HEMT device 2. Since the GAN HEMT device 2 has a relatively low turn-on threshold voltage, the low voltage difference drives the GAN HEMT device 2 to turn on, completing the power distribution work. The two GAN HEMT devices 2 are connected in parallel to ensure high circuit reliability.

[0070] In the description of the present application, it should be understood that the terms "upper", "lower", "front", "back", "top", "bottom", "inside", "outside", etc., indicating orientations or positional relationships, are based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present application.

[0071] In the present application, unless otherwise clearly specified and limited, the terms "install", "connect", "fix" and the like should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection.

Claims

1. A low voltage and high current power distribution method based on dual circuit GANHEMT-magnetic latching relay control, characterized in that: A GaN HEMT power transistor is used as a main switch tube, and a dual GAN ​​HEMT is connected in parallel and bridged between a magnetic latching relay and a low-voltage power supply output positive line. The D pole of the GAN HEMT is connected to the low-voltage power supply output positive line, the S pole of the GAN HEMT is connected to the low-voltage power supply input terminal, and the G pole of the GAN HEMT is connected to the contact end of the magnetic latching relay (4) through a voltage divider resistor, and the position coil (9) and reset coil (10) built into the magnetic latching relay (4); the switch end of the magnetic latching relay (4) is grounded through a low-voltage power supply protection circuit; the power distribution circuit includes two parts: a power distribution instruction receiving circuit and a power distribution connection circuit. The two parts are connected to the power distribution connection circuit (B) through the GAN The gate G of the HEMT device (2) is connected to one end of the switch contact of the magnetic latching relay (4) on the power distribution command receiving circuit (A); the setting coil (9) of the magnetic latching relay (4) is connected in parallel with a group of diodes and then connected between the relay power-on voltage circuit (5) and the power distribution control opening command circuit (7); the reset coil (10) of the magnetic latching relay (4) is connected in parallel with another group of diodes and then connected between the relay power-on voltage circuit (5) and the power distribution control disconnection command circuit (8); the reset coil (10) of the magnetic latching relay (4) is connected in parallel with another group of diodes and then connected between the relay power-on voltage circuit (5) and the power distribution control disconnection command circuit (8); when the power distribution command is input to the command receiving circuit of the magnetic latching relay (4), it reaches the GAN HEMT device (2) at the same time as the power distribution voltage input, the GAN HEMT device (2) switch is turned on, and then the power distribution voltage is output.

2. The low-voltage and high-current power distribution method based on dual-circuit GANHEMT-magnetic latching relay control according to claim 1 is characterized in that: The setting coil (9) and the reset coil (10) in the magnetic holding relay (4) are coils wound in opposite directions; the power distribution control on command input circuit (7) is connected to one end of the setting coil (9), and the power distribution control off command input circuit (8) is connected to the same end of the reset coil (10); the power-on voltage input by the relay power-on voltage circuit (5) is a positive voltage, which comes from the inside of the power supply control system, and this voltage is connected to the other end of the two coils of the relay.

3. The low-voltage and high-current power distribution method based on double-circuit GANHEMT-magnetic latching relay control according to claim 1 is characterized in that: The power distribution command receiving circuit part is composed of a magnetic latching relay (4), a relay energizing voltage circuit (5), a power distribution control connection command input circuit (7) and a power distribution control disconnection command input circuit (8); wherein the power distribution control command is a pulse signal of the same polarity, usually at a low level, and is derived from integrated electronics or a lower computer.

4. The low-voltage and high-current power distribution method based on double-circuit GANHEMT-magnetic latching relay control according to claim 1 is characterized in that: The power distribution connection circuit part is composed of a power distribution voltage input circuit (1), two parallel GAN ​​HEMT devices (2), and a power distribution voltage output circuit (3). The power distribution voltage input circuit (1) is connected to the source S of the GAN HEMT device (2), and the power distribution voltage input circuit (1) is derived from the DCDC conversion output of the controller system. One end of the power distribution voltage output circuit (3) is connected to the drain D of the GAN HEMT device (2), and the other end is connected to the on-board load through an electrical connector to supply power to the on-board load.

5. The low-voltage and high-current power distribution method based on dual-circuit GANHEMT-magnetic latching relay control according to claim 1, characterized in that: When receiving a command pulse signal, the relay energizing voltage circuit (5) is connected to the power distribution control connection command input circuit (7) or the power distribution control disconnection command input circuit (8) through the setting coil (9) and the reset coil (10), that is, the power distribution voltage end, the relay coil, and the command input end form a loop, the setting coil (9) and the reset coil (10) are energized, a magnetic field force is generated, and the contacts of the magnetic holding relay (4) are actuated, thereby completing the setting or resetting state switching.

6. The low-voltage and high-current power distribution method based on dual-circuit GANHEMT-magnetic latching relay control according to claim 1, characterized in that: The power-on voltage inputted by the relay power-on voltage circuit (5) is a positive voltage, which comes from the inside of the power supply control system. This voltage is connected to the other end of the two coils of the relay.

7. The low-voltage and high-current power distribution method based on double-circuit GANHEMT-magnetic latching relay control according to claim 1, characterized in that: The gate G of the GAN HEMT device (2) is connected to one end of the switch contact of the magnetic latching relay (4), and the other end of the switch contact of the magnetic latching relay (4) is grounded. When a power distribution instruction is received and the switch contact of the magnetic latching relay (4) is actuated, the G pole is connected to the ground, the GAN HEMT device (2) is turned on, and the power distribution voltage input circuit (1) is connected to the power distribution voltage output circuit (3) through the GAN HEMT device (2).

8. The low-voltage and high-current power distribution method based on dual-circuit GANHEMT-magnetic latching relay control according to claim 1, characterized in that: A group of capacitors connected in series are respectively connected in parallel to the input ends of the GAN HEMT device (2) for filtering.

9. The low-voltage and high-current power distribution method based on dual-circuit GANHEMT-magnetic latching relay control according to claim 1, characterized in that: A switch state detection circuit (11) is added before the distribution output end of the distribution voltage output circuit (3) to detect whether the distribution circuit is connected; the switch state detection circuit (11) is connected between the distribution voltage output circuit (3) and the output switch state circuit to output a switch state signal; the switch state detection circuit (11) is composed of a first resistor connected in parallel to three branches, wherein the first branch is connected to a second resistor, the second branch is connected to a third resistor in series with two capacitors, the third branch is connected to a fourth resistor in series, and the fourth resistor is connected in parallel with the third resistor, wherein the fourth resistor and the third resistor are simultaneously connected in parallel to ground.

10. The low-voltage and high-current power distribution method based on double-circuit GANHEMT-magnetic latching relay control according to claim 1, characterized in that: After the GAN HEMT device (2) inputs a distribution voltage of 5V, it is divided by two resistors, so that when the G pole of the GAN HEMT device (2) is grounded, the GAN HEMT gate-source voltage difference is 2.5V, which is greater than or equal to the GAN HEMT device (2) conduction threshold voltage, and the GAN HEMT device (2) is turned on; at the same time, a voltage regulator diode is connected in parallel between the gate G and the source S of the GAN HEMT device (2), and the voltage regulator value of the voltage regulator diode is 5V, so as to prevent the GAN HEMT device (2) from being damaged due to voltage fluctuations exceeding the rated gate-source voltage of the GAN HEMT device (2); and a group of capacitors connected in series are connected in parallel to the input ends of the dual GAN ​​HEMT devices (2) for filtering. A switch state detection circuit (11) is added before the distribution output end of the distribution voltage output circuit 3 to detect whether the distribution circuit is connected. If the distribution is connected, the output voltage is divided by the resistor in the switch state detection circuit (11) to output a voltage of about 3V. The resistor and the capacitor form an RC circuit to perform delay and filtering. The distribution voltage output circuit (3) of the 5V output positive line is externally connected to a load. At the same time, the distribution voltage output circuit (3) of the 5V output positive line outputs a 5V switch state signal through the switch state detection circuit (11) and connects it to the lower computer.

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