A method for manufacturing a light emitting device, a light emitting device, and a display device

Abstract

The application discloses a manufacturing method of a light-emitting device, a light-emitting device and a display device. The manufacturing method comprises the following steps: providing a conductive substrate, wherein the conductive substrate comprises a bearing substrate and a conductive layer which are sequentially stacked; performing first etching on the conductive layer to remove part of the conductive layer, so that the remaining part of the conductive layer forms an electrode protruding from the bearing substrate; performing second etching on the electrode to form a first groove section and a second groove section which are in communication with each other on the electrode, the first groove section is closer to the bearing substrate than the second groove section, and the opening area of the first groove section away from the bearing substrate is larger than the opening area of the second groove section close to the bearing substrate; forming a conductive medium layer on the electrode, so that the conductive medium layer is filled in at least the first groove section and the second groove section; and arranging a light-emitting layer on the side of the conductive medium layer away from the bearing substrate, so that the light-emitting layer is conductively connected through the conductive medium layer and the electrode. Thus, the risk of poor contact between the light-emitting layer and the electrode is reduced.

Description

Technical Field

[0001] This application relates to the field of display technology, and in particular to a method for manufacturing a light-emitting device, the light-emitting device, and a display device. Background Technology

[0002] In processes such as display array substrate manufacturing, the scraps of glass substrates can be utilized to prepare circuit boards for light strips, thereby improving the utilization rate of glass substrates. Currently, the glass substrates of light strips are usually electrically connected to the LEDs through glass-based pads and conductive solder paste.

[0003] However, existing glass-based pads have poor solder absorption, and the solder paste has a high rate of voids and bubbles, which leads to unstable connection between the glass substrate and the LED chips and a greater risk of poor contact between the LED chips. Summary of the Invention

[0004] The main objective of this application is to provide a method for manufacturing a light-emitting device, a light-emitting device, and a display device, in order to solve the aforementioned technical problems existing in the prior art.

[0005] To address the aforementioned problems, this application provides a method for manufacturing a light-emitting device. The method includes: providing a conductive substrate, the conductive substrate including a carrier substrate and a conductive layer stacked sequentially; performing a first etching on the conductive layer to remove a portion of the conductive layer and expose the carrier substrate, so that the remaining portion of the conductive layer forms an electrode protruding from the carrier substrate; performing a second etching on the electrode to form a first groove segment and a second groove segment that are interconnected on the electrode, the first groove segment being closer to the carrier substrate than the second groove segment, and the opening area of ​​the first groove segment on the side away from the carrier substrate being larger than the opening area of ​​the second groove segment on the side closer to the carrier substrate; forming a conductive dielectric layer on the electrode, such that the conductive dielectric layer at least fills the first groove segment and the second groove segment; and disposing a light-emitting layer on the side of the conductive dielectric layer away from the carrier substrate, so that the light-emitting layer is electrically connected to the electrode through the conductive dielectric layer.

[0006] In some embodiments, the conductive layer includes a first conductive layer and a second conductive layer, wherein the first conductive layer is closer to the substrate than the second conductive layer, the first conductive layer is used to form a first trench segment, and the second conductive layer forms a second trench segment.

[0007] In some embodiments, the step of first etching the conductive layer to remove a portion of the conductive layer and expose the carrier substrate, so that the remaining portion of the conductive layer forms an electrode protruding from the carrier substrate, includes: applying a first resist to the side of the second conductive layer opposite to the first conductive layer; patterning the first resist to form spaced first openings, through which a portion of the second conductive layer is exposed; removing the second conductive layer exposed through the first openings and the first conductive layer corresponding to the first openings, so that the remaining portion of the first conductive layer and the remaining portion of the second conductive layer form an electrode; and removing the first resist.

[0008] In some embodiments, the step of performing a second etching on the electrode to form an interconnected first trench segment and a second trench segment on the conductive layer, wherein the first trench segment is closer to the carrier substrate than the second trench segment, and the opening area of ​​the first trench segment on the side away from the carrier substrate is larger than the opening area of ​​the second trench segment on the side closer to the carrier substrate includes: applying a second resist on the side of the second conductive layer away from the first conductive layer; patterning the second resist to form spaced second openings, through which a portion of the second conductive layer is exposed; removing the second conductive layer exposed through the second openings and a portion of the first conductive layer corresponding to the second openings to form the first trench segment and the second trench segment; and removing the second resist.

[0009] In some embodiments, the step of removing the second conductive layer exposed through the first opening and the first conductive layer corresponding to the first opening, so that the remaining portion of the first conductive layer and the second conductive layer form an electrode, includes: removing the second conductive layer exposed through the first opening and the first conductive layer corresponding to the first opening with an etching solution; the step of removing the second conductive layer exposed through the second opening and a portion of the first conductive layer corresponding to the second opening, to form a first trench segment and a second trench segment, includes: removing the second conductive layer exposed through the second opening and a portion of the first conductive layer corresponding to the second opening with an etching solution; wherein the reaction rate of the first conductive layer with the etching solution is greater than the reaction rate of the second conductive layer with the etching solution.

[0010] In some embodiments, prior to the step of forming a conductive dielectric layer on the electrode to at least fill the first and second trench segments, the manufacturing method further includes: forming an insulating layer on a carrier substrate; and removing a portion of the insulating layer corresponding to the electrode to expose the electrode.

[0011] In some embodiments, after removing a portion of the insulating layer corresponding to the electrode to expose the electrode, the manufacturing method further includes: coating a reflective layer on the side of the insulating layer and the electrode away from the carrier substrate; and removing a portion of the reflective layer corresponding to the electrode to expose the electrode.

[0012] In some embodiments, after the step of forming the light-emitting layer on the side of the conductive dielectric layer away from the carrier substrate, the manufacturing method further includes: forming a transparent protective adhesive on the side of the light-emitting layer away from the conductive dielectric layer.

[0013] To address the aforementioned problems, this application provides a light-emitting device, which is manufactured using the aforementioned method for manufacturing light-emitting devices.

[0014] To address the aforementioned problems, this application provides a display device, which includes the aforementioned light-emitting device.

[0015] The beneficial effects of this invention are as follows: Unlike existing technologies, this application provides a method for manufacturing a light-emitting device. The method includes: providing a conductive substrate, the conductive substrate comprising a carrier substrate and a conductive layer stacked sequentially; performing a first etching on the conductive layer to remove a portion of the conductive layer and expose the carrier substrate, so that the remaining portion of the conductive layer forms an electrode protruding from the carrier substrate; performing a second etching on the electrode to form a first groove segment and a second groove segment that are interconnected, the first groove segment being closer to the carrier substrate than the second groove segment, and the opening area of ​​the first groove segment on the side away from the carrier substrate being larger than the opening area of ​​the second groove segment on the side closer to the carrier substrate; forming a conductive dielectric layer on the electrode, such that the conductive dielectric layer at least fills the first groove segment and the second groove segment; and disposing a light-emitting layer on the side of the conductive dielectric layer away from the carrier substrate, so that the light-emitting layer is electrically connected to the electrode through the conductive dielectric layer. Through the above implementation, the first etching and the second etching form the electrode, the first trench segment, and the second trench segment. The conductive dielectric layer increases the contact area between the conductive dielectric layer and the electrode by filling the first trench segment and the second trench segment. Moreover, the opening area of ​​the first trench segment away from the substrate is larger than the opening area of ​​the second trench segment near the substrate, which facilitates the conductive dielectric layer to be better embedded in the second trench segment. This makes the connection between the conductive dielectric layer and the electrode tighter and reduces the risk of poor contact between the light-emitting layer and the electrode. Attached Figure Description

[0016] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0017] Figure 1 This is a schematic diagram of the structure of a display device according to one or more embodiments of this application;

[0018] Figure 2 This is a first structural schematic diagram of a light-emitting device according to one or more embodiments of this application;

[0019] Figure 3 This is a first process diagram of a method for manufacturing a light-emitting device according to one or more embodiments of this application;

[0020] Figure 4 This is a second structural schematic diagram of a light-emitting device according to one or more embodiments of this application;

[0021] Figure 5 This is a second process diagram illustrating a method for manufacturing a light-emitting device according to one or more embodiments of this application;

[0022] Figure 6This is a third structural schematic diagram of a light-emitting device according to one or more embodiments of this application;

[0023] Figure 7 This is a fourth structural schematic diagram of a light-emitting device according to one or more embodiments of this application;

[0024] Figure 8 This is a fifth structural schematic diagram of a light-emitting device according to one or more embodiments of this application;

[0025] Figure 9 This is a sixth structural schematic diagram of a light-emitting device according to one or more embodiments of this application;

[0026] Figure 10 This is a seventh structural schematic diagram of a light-emitting device according to one or more embodiments of this application;

[0027] Figure 11 This is a third process diagram illustrating a method for manufacturing a light-emitting device according to one or more embodiments of this application;

[0028] Figure 12 This is an eighth structural schematic diagram of a light-emitting device according to one or more embodiments of this application;

[0029] Figure 13 This is a ninth structural schematic diagram of a light-emitting device according to one or more embodiments of this application;

[0030] Figure 14 This is a tenth structural schematic diagram of a light-emitting device according to one or more embodiments of this application;

[0031] Figure 15 This is an eleventh structural schematic diagram of a light-emitting device according to one or more embodiments of this application;

[0032] Figure 16 This is a twelfth structural schematic diagram of a light-emitting device according to one or more embodiments of this application;

[0033] Figure 17 This is a fourth process diagram of a method for manufacturing a light-emitting device according to one or more embodiments of this application;

[0034] Figure 18 This is a thirteenth structural schematic diagram of a light-emitting device according to one or more embodiments of this application;

[0035] Figure 19 This is a fourteenth structural schematic diagram of a light-emitting device according to one or more embodiments of this application;

[0036] Figure 20 This is a fifth process diagram of a method for manufacturing a light-emitting device according to one or more embodiments of this application;

[0037] Figure 21 This is a fifteenth structural schematic diagram of a light-emitting device according to one or more embodiments of this application.

[0038] Reference numerals in the figures: Display device 1; Light-emitting device 2; Conductive substrate 10; Supporting substrate 11; Glass substrate 111; Buffer layer 112; Conductive layer 12; First conductive layer 121; Second conductive layer 122; Electrode 13; First groove segment 131; Second groove segment 132; Conductive dielectric layer 20; Light-emitting layer 30; First resist 40; First opening 41; Second resist 50; Second opening 51; Insulating layer 60; Reflective layer 70; Transparent protective adhesive 80; Photomask 90. Detailed Implementation

[0039] The embodiments of the technical solution of this application will now be described in detail with reference to the accompanying drawings. These embodiments are only used to more clearly illustrate the technical solution of this application and are therefore merely examples, and should not be used to limit the scope of protection of this application.

[0040] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application pertains; the terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit the application; the terms “comprising” and “having”, and any variations thereof, in the specification, claims, and foregoing description of the drawings are intended to cover non-exclusive inclusion.

[0041] In the description of the embodiments of this application, technical terms such as "first" and "second" are used only to distinguish different objects and should not be construed as indicating or implying relative importance or implicitly specifying the number, specific order, or primary and secondary relationship of the indicated technical features. In the description of the embodiments of this application, "multiple" means two or more, unless otherwise explicitly defined.

[0042] In this document, the term "embodiment" means that a particular feature, structure, or characteristic described in connection with an embodiment may be included in at least one embodiment of this application. The appearance of this phrase in various places throughout the specification does not necessarily refer to the same embodiment, nor is it a separate or alternative embodiment mutually exclusive with other embodiments. It will be explicitly and implicitly understood by those skilled in the art that the embodiments described herein can be combined with other embodiments.

[0043] In the description of the embodiments in this application, the term "and / or" is merely a description of the relationship between related objects, indicating that three relationships can exist. For example, A and / or B can represent: A existing alone, A and B existing simultaneously, and B existing alone. Additionally, the character " / " in this document generally indicates that the preceding and following related objects have an "or" relationship.

[0044] In the description of the embodiments of this application, the term "multiple" refers to two or more (including two), similarly, "multiple sets" refers to two or more (including two sets), and "multiple pieces" refers to two or more (including two pieces).

[0045] In the description of the embodiments of this application, the technical terms "center," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," and "circumferential" indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing the embodiments of this application and simplifying the description, and are not intended to indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on the embodiments of this application.

[0046] In the description of the embodiments of this application, unless otherwise expressly specified and limited, technical terms such as "installation," "connection," "joining," and "fixing" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components. For those skilled in the art, the specific meaning of the above terms in the embodiments of this application can be understood according to the specific circumstances.

[0047] In processes such as display array substrate manufacturing, the scraps of glass substrates can be utilized to prepare circuit boards for light strips, thereby improving the utilization rate of glass substrates. Currently, the glass substrates of light strips are usually electrically connected to the LEDs through glass-based pads and conductive solder paste.

[0048] However, the glass-based pads have poor solder absorption, and the solder paste has a high rate of voids and bubbles, which leads to unstable connection between the glass substrate and the LED chips and a greater risk of poor contact between the LED chips.

[0049] Therefore, this application provides a method for manufacturing a light-emitting device to solve the above-mentioned problems.

[0050] Please refer to Figure 1 , Figure 1 This is a schematic diagram of the structure of a display device according to one or more embodiments of this application.

[0051] This application provides a display device, which may include, but is not limited to, mobile phones, tablets, laptops, desktop computers, terminals, interactive displays, digital audio-visual equipment, IoT devices, etc. Interactive displays may include interactive whiteboards, digital advertising interactive screens, and interactive gaming displays, etc. IoT devices may include smart home devices and smart wearable devices, etc. The display device may include a light-emitting device that provides a light source for the display device.

[0052] Please refer to Figures 2-3 , Figure 2 This is a first structural schematic diagram of a light-emitting device according to one or more embodiments of this application; Figure 3 This is a first process diagram of a method for manufacturing a light-emitting device according to one or more embodiments of this application; Figure 4 This is a second structural schematic diagram of a light-emitting device according to one or more embodiments of this application.

[0053] To solve the above problems, this application provides a light-emitting device 2, which can be installed on a display device 1 and provide a light source for the display device 1. The light-emitting device 2 is prepared by the above-described manufacturing method of the light-emitting device.

[0054] To solve the above problems, the manufacturing method of the light-emitting device provided in this application includes the following steps:

[0055] Step S11: Provide a conductive substrate, which includes a carrier substrate and a conductive layer stacked sequentially.

[0056] The carrier substrate 11 can provide support and fixation for the conductive layer 12. The carrier substrate 11 may include a glass substrate 111. The conductive layer 12 is conductive, and the material of the conductive layer 12 may include, but is not limited to, one or more of copper, molybdenum, and other metal materials. In some applications, the carrier substrate 11 also includes a buffer layer 112, which is disposed on the glass substrate 111. The conductive layer 12 is located on the side of the buffer layer 112 away from the glass substrate 111. The material of the buffer layer 112 may include, but is not limited to, silicon dioxide, thereby improving the adhesion between the carrier substrate 11 and the conductive layer 12 and reducing the risk of the conductive layer 12 peeling off from the carrier substrate 11.

[0057] Step S12: Perform a first etching on the conductive layer to remove part of the conductive layer and expose the carrier substrate, so that the remaining part of the conductive layer forms an electrode protruding from the carrier substrate.

[0058] The conductive layer 12 is etched for the first time using either dry or wet etching to remove a portion of the conductive layer 12. It should be noted that after the partial removal of the conductive layer 12, the supporting substrate 11 corresponding to this removed portion is exposed on the side facing the conductive layer 12. The conductive layer 12 remaining on the supporting substrate 11 forms electrodes 13 protruding from the supporting substrate 11. In some applications, the conductive layer 12 may form two electrodes 13, which are spaced apart in the direction of extension of the supporting substrate 11. The two electrodes 13 may correspond to the positive and negative electrodes of the light-emitting layer 30, respectively.

[0059] Step S13: Perform a second etching on the electrode to form a first trench segment and a second trench segment that are interconnected on the electrode. The first trench segment is closer to the substrate than the second trench segment, and the opening area of ​​the first trench segment on the side away from the substrate is larger than the opening area of ​​the second trench segment on the side closer to the substrate.

[0060] Electrode 13 is etched a second time using either dry or wet etching to form a first trench segment 131 and a second trench segment 132 that are interconnected. The first trench segment 131 and the second trench segment 132 can be arranged in a direction perpendicular to the carrier substrate 11. The first trench segment 131 is closer to the carrier substrate 11 than the second trench segment 132, and the opening area of ​​the first trench segment 131 on the side away from the carrier substrate 11 is larger than the opening area of ​​the second trench segment 132 on the side closer to the carrier substrate 11. In some applications, the opening area of ​​the first trench segment 131 on the side away from the carrier substrate 11 is larger than the area of ​​the bottom wall of the first trench segment 131 on the side closer to the carrier substrate 11, and the opening area of ​​the second trench segment 132 on the side away from the carrier substrate 11 is larger than the opening area of ​​the second trench segment 132 on the side closer to the carrier substrate 11.

[0061] Step S14: Form a conductive dielectric layer on the electrode so that the conductive dielectric layer fills at least the first and second trench segments.

[0062] The conductive dielectric layer 20 has good conductivity and can be fluid. The conductive dielectric layer 20 can include, but is not limited to, solder paste and conductive adhesive. Taking solder paste as an example, the solder paste, in a fluid form, fills at least the first slot 131 and the second slot 132. After solidification, the solder paste is embedded in the first and second slots 132. The fact that the conductive dielectric layer 20 fills at least the first and second slots 131 and 132 increases the contact area between the conductive dielectric layer 20 and the electrode 13, improving the tightness of the connection between the conductive dielectric layer 20 and the electrode 13, thereby improving the conductivity between the conductive dielectric layer 20 and the electrode 13. Since the first slot 131 is closer to the substrate 11 than the second slot 132, the opening area of ​​the first slot 131 on the side away from the substrate 11 is larger than the opening area of ​​the second slot 132 on the side closer to the substrate 11. This further allows the conductive dielectric layer 20 to be embedded in the first and second slots 131 and 132, improving the connection between the conductive dielectric layer 20 and the electrode 13. It should be noted that the conductive dielectric layer 20 may also cover the side of the electrode 13 away from the carrier substrate 11.

[0063] Step S15: A light-emitting layer is disposed on the side of the conductive dielectric layer away from the carrier substrate, so that the light-emitting layer is electrically connected to the electrode through the conductive dielectric layer.

[0064] The light-emitting layer 30 can be used to emit light beams. The light-emitting layer 30 can be, but is not limited to, LED beads. The light-emitting layer 30 is disposed on the side of the conductive dielectric layer 20 away from the carrier substrate 11, so that the light-emitting layer 30 can be connected to the electrode 13 through the conductive dielectric layer 20, thereby illuminating the light-emitting layer 30. Through the first groove segment 131 and the second groove segment 132, the electrical connection between the conductive dielectric layer 20 and the electrode 13 is better, reducing the risk of poor contact between the light-emitting layer 30 and the electrode 13.

[0065] Through the above embodiments, the first etching and the second etching form the electrode 13, the first trench segment 131 and the second trench segment 132. The conductive dielectric layer 20 increases the contact area between the conductive dielectric layer 20 and the electrode 13 by filling the first trench segment 131 and the second trench segment 132. Moreover, the opening area of ​​the first trench segment 131 away from the carrier substrate 11 is larger than the opening area of ​​the second trench segment 132 near the carrier substrate 11, which makes it easier for the conductive dielectric layer 20 to be better embedded in the second trench segment 132. This makes the connection between the conductive dielectric layer 20 and the electrode 13 tighter and reduces the risk of poor contact between the light-emitting layer 30 and the electrode 13.

[0066] In some embodiments, the conductive layer 12 includes a first conductive layer 121 and a second conductive layer 122. The first conductive layer 121 is closer to the carrier substrate 11 than the second conductive layer 122. The first conductive layer 121 forms a first trench segment 131, and the second conductive layer 122 forms a second trench segment 132. The first conductive layer 121 and the second conductive layer 122 can be deposited on the carrier substrate 11 using a sputtering technique. The materials of the first conductive layer 121 and the second conductive layer 122 can be different. For example, the first conductive layer 121 can be made of copper, and the second conductive layer 122 can be made of molybdenum. It should be noted that using different materials for the first conductive layer 121 and the second conductive layer 122 facilitates the formation of first trench segments 131 and second trench segments 132 with different opening areas.

[0067] Please refer to Figures 5-10 , Figure 5 This is a second process diagram illustrating a method for manufacturing a light-emitting device according to one or more embodiments of this application; Figure 6 This is a third structural schematic diagram of a light-emitting device according to one or more embodiments of this application; Figure 7 This is a fourth structural schematic diagram of a light-emitting device according to one or more embodiments of this application; Figure 8 This is a fifth structural schematic diagram of a light-emitting device according to one or more embodiments of this application; Figure 9 This is a sixth structural schematic diagram of a light-emitting device according to one or more embodiments of this application; Figure 10 This is a seventh structural schematic diagram of a light-emitting device according to one or more embodiments of this application.

[0068] In some embodiments, step S12 includes: Step S121: Depositing a first resist 40 on the side of the second conductive layer 122 opposite to the first conductive layer 121. Step S122: Patterning the first resist 40 to form spaced first openings 41, through which a portion of the second conductive layer 122 is exposed. Step S123: Removing the second conductive layer 122 exposed through the first opening 41 and the first conductive layer 121 corresponding to the first opening 41, so that the remaining portion of the first conductive layer 121 and the remaining portion of the second conductive layer 122 form the electrode 13. Step S124: Removing the first resist 40.

[0069] Specifically, the first photoresist 40 can be a positive or negative photoresist. The first photoresist 40 is disposed on the side of the second conductive layer 122 opposite to the first conductive layer 121. The photoresist is exposed using a photomask 90. ​​When the first photoresist 40 is a negative photoresist, the portion exposed to light will dissolve in the developer, while the portion not exposed to light will not. After adding developer to the first photoresist 40, the portion exposed to light is dissolved by the developer, thus forming a first opening 41 on the first photoresist 40 that exposes the second conductive layer 122. The second conductive layer 122 exposed through the first opening 41 and the first conductive layer 121 corresponding to the first opening 41 are etched to expose the substrate 11 corresponding to the first opening 41. The remaining unetched portions of the first conductive layer 121 and the second conductive layer 122 form the electrode 13. Specifically, the first photoresist 40 can be removed by dripping photoresist.

[0070] Please refer to Figures 11-16 , Figure 11 This is a third process diagram illustrating a method for manufacturing a light-emitting device according to one or more embodiments of this application; Figure 12 This is an eighth structural schematic diagram of a light-emitting device according to one or more embodiments of this application; Figure 13 This is a ninth structural schematic diagram of a light-emitting device according to one or more embodiments of this application; Figure 14 This is a tenth structural schematic diagram of a light-emitting device according to one or more embodiments of this application; Figure 15 This is an eleventh structural schematic diagram of a light-emitting device according to one or more embodiments of this application; Figure 16 This is a twelfth structural schematic diagram of a light-emitting device according to one or more embodiments of this application.

[0071] In some embodiments, step S13 includes: Step S131: Depositing a second resist 50 on the side of the second conductive layer 122 opposite to the first conductive layer 121. Step S132: Patterning the second resist 50 to form spaced second openings 51, through which a portion of the second conductive layer 122 is exposed. Step S133: Removing the second conductive layer 122 exposed through the second openings 51 and a portion of the first conductive layer 121 corresponding to the second openings 51 to form a first trench segment 131 and a second trench segment 132. Step S134: Removing the second resist 50.

[0072] Specifically, the second photoresist 50 can be a positive or negative photoresist. The second photoresist 50 is disposed on the side of the second conductive layer 122 facing away from the first conductive layer 121. The photoresist is exposed through a photomask 90. ​​When the second photoresist 50 is a negative photoresist, the portion exposed to light will dissolve in the developer, while the portion not exposed to light will not. After adding developer to the second photoresist 50, the portion exposed to light is dissolved by the developer, thereby forming a second opening 51 on the second photoresist 50 that exposes the second conductive layer 122. The second conductive layer 122 exposed through the second opening 51 and the portion of the first conductive layer 121 corresponding to the second opening 51 are etched to form a first trench segment 131 and a second trench segment 132. It should be noted that the depth of the second trench segment 132 corresponds to the thickness of the second conductive layer 122, and the depth of the first trench segment 131 is less than the thickness of the first conductive layer 121. In some applications, the etching solution used for the first etching is the same as that used for the second etching, and the etching time for the second etching is shorter than that for the first etching. That is, the reaction time between the conductive layer 12 and the etching solution in the second etching is shorter than that in the first etching, thereby mitigating the risk that the first conductive layer 121 corresponding to the second opening 51 will be completely etched due to the excessively long reaction time of the second etching, resulting in the electrode 13 being disconnected. Specifically, the second photoresist 50 can be removed by dripping off the photoresist.

[0073] In some embodiments, step S123 further includes: removing the second conductive layer 122 exposed through the first opening 41 and the first conductive layer 121 corresponding to the first opening 41 using an etching solution. Step S133 further includes: removing the second conductive layer 122 exposed through the second opening 51 and a portion of the first conductive layer 121 corresponding to the second opening 51 using an etching solution. The reaction rate of the first conductive layer 121 with the etching solution is greater than the reaction rate of the second conductive layer 122 with the etching solution.

[0074] The etching solution can chemically react with the first conductive layer 121 and the second conductive layer 122 to remove the corresponding first conductive layer 121 and second conductive layer 122. It should be noted that the etching solution in steps S123 and S133 is the same; for example, the etching solution can be hydrogen peroxide. The reaction rate between the first conductive layer 121 and the etching solution is greater than the reaction rate between the second conductive layer 122 and the etching solution, and the etching time of the second etching is shorter than the etching time of the first etching. For example, the material of the first conductive layer 121 is copper, and the material of the second conductive layer 122 is molybdenum. The reaction rate of copper with hydrogen peroxide is greater than the reaction rate of molybdenum with hydrogen peroxide, thereby forming interconnected first trench segment 131 and second trench segment 132 on the electrode 13. The first trench segment 131 is closer to the carrier substrate 11 than the second trench segment 132, and the opening area of ​​the first trench segment 131 on the side away from the carrier substrate 11 is greater than the opening area of ​​the second trench segment 132 on the side closer to the carrier substrate 11. Therefore, the same etching solution can be used to form a first groove segment 131 and a second groove segment 132 with different opening areas on the electrode 13, saving production costs.

[0075] Please refer to Figures 17-19 , Figure 17 This is a fourth process diagram of a method for manufacturing a light-emitting device according to one or more embodiments of this application; Figure 18 This is a thirteenth structural schematic diagram of a light-emitting device according to one or more embodiments of this application; Figure 19 This is a fourteenth structural schematic diagram of a light-emitting device according to one or more embodiments of this application.

[0076] In some embodiments, prior to step S14, the manufacturing method further includes: step S21: forming an insulating layer 60 on the carrier substrate 11. Step S22: removing a portion of the insulating layer 60 corresponding to the electrode 13 to expose the electrode 13. Specifically, the insulating layer 60 exposing the electrode 13 can be formed on the carrier substrate 11 by exposure, development, and etching. This reduces the risk of short circuits in the electrode 13. For example, when there are two electrodes 13, corresponding to the positive and negative electrodes of the light-emitting layer 30 respectively, a portion of the insulating layer 60 can be located between the two electrodes 13, thereby reducing the risk of short circuits between the two electrodes 13 and improving the reliability of the light-emitting device 2.

[0077] In some embodiments, after step S22, the manufacturing method further includes: step S23: coating a reflective layer 70 on the side of the insulating layer 60 and the electrode 13 facing away from the carrier substrate 11. Step S24: removing a portion of the reflective layer 70 corresponding to the electrode 13 to expose the electrode 13. Specifically, the reflective layer 70 can be formed on the side of the insulating layer 60 facing away from the carrier substrate 11 by exposure, development, and etching. The reflective layer 70 can be used to reflect the light beam emitted by the light-emitting layer 30. The reflective layer 70 can reflect the light beam emitted from the side of the light-emitting layer 30 to the side of the light-emitting layer 30 facing away from the carrier substrate 11, thereby improving the utilization rate of the light beam emitted by the light-emitting layer 30 and mitigating the risk of light beam waste.

[0078] Please refer to Figures 20-21 , Figure 20 This is a fifth process diagram of a method for manufacturing a light-emitting device according to one or more embodiments of this application; Figure 21 This is a fifteenth structural schematic diagram of a light-emitting device according to one or more embodiments of this application.

[0079] In some embodiments, after step S15, the manufacturing method further includes: step S16: forming a transparent protective adhesive 80 on the side of the light-emitting layer 30 facing away from the conductive dielectric layer 20. Specifically, the transparent protective adhesive 80 may cover the side of the light-emitting layer 30 facing away from the conductive dielectric layer 20 to transmit the light beam emitted from the light-emitting layer 30. The transparent protective adhesive 80 can provide protection for the light-emitting layer 30 and allow the light beam emitted by the light-emitting layer 30 to be transmitted outward through the transparent protective adhesive 80, thereby reducing the risk of damage to the light-emitting layer 30.

[0080] In summary, this application provides a method for manufacturing a light-emitting device. The method includes: providing a conductive substrate 10, the conductive substrate 10 including a carrier substrate 11 and a conductive layer 12 stacked sequentially; performing a first etching on the conductive layer 12 to remove a portion of the conductive layer 12 and expose the carrier substrate 11, so that the remaining portion of the conductive layer 12 forms an electrode 13 protruding from the carrier substrate 11; performing a second etching on the electrode 13 to form a first groove segment 131 and a second groove segment 132 that are interconnected on the electrode 13, the first groove segment 131 being closer to the carrier substrate 11 than the second groove segment 132, and the opening area of ​​the first groove segment 131 on the side away from the carrier substrate 11 being larger than the opening area of ​​the second groove segment 132 on the side closer to the carrier substrate 11; forming a conductive dielectric layer 20 on the electrode 13, such that the conductive dielectric layer 20 at least fills the first groove segment 131 and the second groove segment 132; and disposing a light-emitting layer 30 on the side of the conductive dielectric layer 20 away from the carrier substrate 11, so that the light-emitting layer 30 is electrically connected to the electrode 13 through the conductive dielectric layer 20. Through the above embodiments, the first etching and the second etching form the electrode 13, the first trench segment 131 and the second trench segment 132. The conductive dielectric layer 20 increases the contact area between the conductive dielectric layer 20 and the electrode 13 by filling the first trench segment 131 and the second trench segment 132. Moreover, the opening area of ​​the first trench segment 131 away from the carrier substrate 11 is larger than the opening area of ​​the second trench segment 132 near the carrier substrate 11, which makes it easier for the conductive dielectric layer 20 to be better embedded in the second trench segment 132. This makes the connection between the conductive dielectric layer 20 and the electrode 13 tighter and reduces the risk of poor contact between the light-emitting layer 30 and the electrode 13.

[0081] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of this application, and not to limit them. Although this application has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some or all of the technical features therein. These modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of this application, and they should all be covered within the scope of the claims and specification of this application. In particular, as long as there is no structural conflict, the various technical features mentioned in the embodiments can be combined in any way. This application is not limited to the specific embodiments disclosed herein, but includes all technical solutions falling within the scope of the claims.

Claims

1. A method for manufacturing a light-emitting device, characterized in that, The manufacturing method includes: A conductive substrate is provided, the conductive substrate comprising a carrier substrate and a conductive layer stacked sequentially; The conductive layer is etched for the first time to remove part of the conductive layer and expose the carrier substrate, so that the remaining part of the conductive layer forms an electrode protruding from the carrier substrate. The electrode is etched a second time to form a first groove segment and a second groove segment that are interconnected on the electrode. The first groove segment is closer to the carrier substrate than the second groove segment. The opening area of ​​the first groove segment on the side away from the carrier substrate is larger than the opening area of ​​the second groove segment on the side closer to the carrier substrate. A conductive dielectric layer is formed on the electrode such that the conductive dielectric layer at least fills the first trench segment and the second trench segment; A light-emitting layer is disposed on the side of the conductive dielectric layer opposite to the carrier substrate, so that the light-emitting layer is electrically connected to the electrode through the conductive dielectric layer.

2. The manufacturing method according to claim 1, characterized in that, The conductive layer includes a first conductive layer and a second conductive layer. The first conductive layer is closer to the carrier substrate than the second conductive layer. The first conductive layer is used to form the first groove segment, and the second conductive layer forms the second groove segment.

3. The manufacturing method according to claim 2, characterized in that, The step of performing a first etching of the conductive layer to remove a portion of the conductive layer and expose the carrier substrate, so that the remaining portion of the conductive layer forms an electrode protruding from the carrier substrate, includes: A first resist is disposed on the side of the second conductive layer opposite to the first conductive layer; The first resist is patterned to form spaced-apart first openings, through which a portion of the second conductive layer is exposed. Remove the second conductive layer exposed through the first opening and the first conductive layer corresponding to the first opening, so that the remaining portion of the first conductive layer and the remaining portion of the second conductive layer form the electrode; Remove the first resist.

4. The manufacturing method according to claim 3, characterized in that, The step of performing a second etching on the electrode to form an interconnected first trench segment and a second trench segment on the electrode, wherein the first trench segment is closer to the carrier substrate than the second trench segment, and the opening area of ​​the first trench segment on the side away from the carrier substrate is larger than the opening area of ​​the second trench segment on the side closer to the carrier substrate includes: A second resist is disposed on the side of the second conductive layer opposite to the first conductive layer; The second resist is patterned to form spaced-apart second openings, through which a portion of the second conductive layer is exposed. Remove the second conductive layer exposed through the second opening and a portion of the first conductive layer corresponding to the second opening to form the first trench segment and the second trench segment; Remove the second resist.

5. The manufacturing method according to claim 4, characterized in that, The step of removing the second conductive layer exposed through the first opening and the first conductive layer corresponding to the first opening, so that the remaining portion of the first conductive layer and the second conductive layer forms the electrode, includes: The second conductive layer exposed through the first opening and the first conductive layer corresponding to the first opening are removed by etching solution; The step of removing the second conductive layer exposed through the second opening and a portion of the first conductive layer corresponding to the second opening to form the first trench segment and the second trench segment includes: The etching solution removes the second conductive layer exposed through the second opening and a portion of the first conductive layer corresponding to the second opening. The reaction rate between the first conductive layer and the etching solution is greater than the reaction rate between the second conductive layer and the etching solution.

6. The manufacturing method according to claim 1, characterized in that, Prior to the step of forming a conductive dielectric layer on the electrode to at least fill the first trench segment and the second trench segment, the manufacturing method further includes: An insulating layer is formed on the carrier substrate; Remove the portion of the insulating layer corresponding to the electrode to expose the electrode.

7. The manufacturing method according to claim 6, characterized in that, After the step of removing the portion of the insulating layer corresponding to the electrode to expose the electrode, the manufacturing method further includes: A reflective layer is coated on the insulating layer and the side of the electrode facing away from the carrier substrate; Remove the portion of the reflective layer corresponding to the electrode to expose the electrode.

8. The manufacturing method according to claim 1, characterized in that, After the step of forming a light-emitting layer on the side of the conductive dielectric layer opposite to the carrier substrate, the manufacturing method further includes: A transparent protective adhesive is formed on the side of the light-emitting layer opposite to the conductive dielectric layer.

9. A light-emitting device, characterized in that, The light-emitting device is prepared by the light-emitting device manufacturing method according to any one of claims 1-8.

10. A display device, characterized in that, The display device includes the light-emitting device as described in claim 9.

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