Preparation Method of Perovskite Solar Cell with Polymer Self-Assembled Monolayer Film

Abstract

The present application relates to a preparation method of a perovskite solar cell with a polymer self-assembled monolayer film, comprising the following steps: depositing a transparent conductive substrate on a substrate, and then preparing a hole transport layer on the conductive substrate; forming a polymer self-assembled monolayer on the hole transport layer, and the solute of the precursor solution of the polymer self-assembled monolayer is Poly-4PACz, and the solvent comprises ethanol and dimethyl sulfoxide; coating a perovskite precursor material on the polymer self-assembled monolayer to form a perovskite light absorption layer; depositing an electron transport material on the perovskite light absorption layer to form an electron transport layer; depositing a back electrode on the electron transport layer; realizing uniform coating of the monolayer film, providing an ideal interface for the solution method deposition of the subsequent perovskite light absorption layer, significantly improving the film-forming characteristics of the perovskite film and passivating defects, enhancing the optoelectronic performance and long-term stability of the component, and providing a potential technical route for the industrial production of perovskite solar cell components.

Description

Technical Field

[0001] The present invention discloses a technology related to perovskite solar cells, and relates to a preparation method of a perovskite cell with a polymer self-assembled monolayer film. Background Art

[0002] Perovskite solar cells are regarded as the core representatives of the next-generation photovoltaic technology due to their high photoelectric conversion efficiency, low-cost preparation process, and good scalability. Especially, p-i-n type (inverted structure) perovskite solar cells show great potential in commercial applications due to their low-temperature processing, excellent interface stability, and suitability for large-area preparation. However, how to achieve uniform coating on a large-area substrate remains the main technical challenge currently faced.

[0003] Hole transport materials play a key role in perovskite solar cells, and their quality directly affects the uniformity of the film and the final performance of the device. Traditional poly(triarylamine) (PTAA) hole transport materials are widely used due to their good hole extraction ability and chemical stability, but their hydrophobicity leads to insufficient coating uniformity on large-area substrates, limiting the improvement of device performance. To solve these problems, small molecule self-assembled monolayers (SAMs) based on carbazole phosphate (PACz) have been developed in recent years. These SAM materials form chemical bonds with the surface of transparent conductive oxides (TCOs) through their phosphate groups and show good effects in interface passivation and hole extraction. However, the following problems of SAM materials in large-area coating still need to be urgently solved: the film thickness and uniformity are limited, especially when the surface roughness of the substrate is large, incomplete coverage is likely to occur; the multilayer stacking effect of small molecule SAMs increases the interface resistance, thereby reducing the optoelectronic performance of the device, and the photo-thermal stability is limited; in large-scale processes such as doctor blading or slot die coating, the film quality is easily affected by environmental conditions (such as humidity and temperature).

[0004] To solve the above problems, researchers have developed a polymer-type hole transport material Poly-4PACz. Poly-4PACz is prepared by polymerizing carbazole phosphate monomers. This method achieves uniform film formation in small-area experiments and exhibits efficient hole extraction ability and interface passivation effect. However, Poly-4PACz still has the above problems in large-area preparation, and there is no relevant report currently. Summary of the Invention

[0005] In view of this, the present application provides a preparation method of a perovskite cell with a polymer self-assembled monolayer film, which realizes uniform coating of the monolayer film on a large-area substrate by optimizing the solvent system, adopting a slot die coating process, and introducing a vacuum film-forming technology.

[0006] According to one aspect of the present application, a method for preparing a perovskite solar cell with a polymer self-assembled monolayer film is provided. The perovskite solar cell with the polymer self-assembled monolayer film is suitable for being disposed on an external substrate and includes the following steps: Step 1: Deposit a transparent conductive substrate on the substrate, and then prepare a hole transport layer on the conductive substrate; Step 2: Form a polymer self-assembled monolayer on the hole transport layer, and the solute of the precursor solution of the polymer self-assembled monolayer is Poly-4PACz, and the solvent includes ethanol and dimethyl sulfoxide; Step 3: Coat a perovskite precursor material on the polymer self-assembled monolayer to form a perovskite light absorption layer; Step 4: Deposit an electron transport material on the perovskite light absorption layer to form an electron transport layer; Step 5: Deposit a back electrode on the electron transport layer.

[0007] According to one aspect of the present application, Poly-4PACz is dissolved in a mixed solvent of ethanol and dimethyl sulfoxide by magnetic stirring to form a polymer solution.

[0008] According to one aspect of the present application, the volume ratio of the ethanol to the dimethyl sulfoxide is 0.5:1 or 0.8: or 1:1 or 1.5:1.

[0009] According to one aspect of the present application, the polymer solution is deposited on the hole transport layer by slot coating, vacuum film formation is performed for 40 seconds, and annealing is performed at 100 °C for 10 minutes to form a polymer self-assembled monolayer film.

[0010] According to one aspect of the present application, the speed of the slot coating is 20 mm / s.

[0011] According to one aspect of the present application, the substrate is a glass substrate, and one of indium tin oxide thin film and fluorine-doped tin oxide thin film is deposited on the glass substrate to form a transparent conductive substrate; nickel oxide thin film is deposited on the conductive substrate by spin coating or magnetron sputtering to form a hole transport layer.

[0012] According to one aspect of the present application, the precursor solution of the perovskite light absorption layer is a solution of AX and BX2, and the solvent of the perovskite precursor solution is dimethylformamide and dimethyl sulfoxide; wherein, the A site is composed of any one cation among cesium, rubidium, potassium, amino group, amidino group or alkali group; the B site is composed of any divalent metal cation among lead, tin, tungsten, copper, zinc, gallium, germanium, arsenic, selenium, rhodium, palladium, silver, cadmium, indium, antimony, osmium, iridium, platinum, gold, mercury, thallium, bismuth, polonium; the X site is composed of any one anion among chlorine, bromine, iodine, thiocyanate, cyanide, oxycyanide, acetate, azide, borohydride.

[0013] According to one aspect of the present application, a fullerene layer is deposited on the perovskite light absorption layer by thermal evaporation or spin coating to form an electron transport layer; a bathocuproine layer is deposited on the electron transport layer by thermal evaporation or spin coating to form a hole blocking layer.

[0014] According to one aspect of the present application, a metal electrode is deposited on the hole blocking layer to form a back electrode, and the material of the back electrode is silver or copper.

[0015] According to one aspect of the present application, the chemical structure of Poly-4PACz is:

[0016]

[0017] Advantages of the present invention: Due to the ethanol / dimethyl sulfoxide solvent system, significant improvements have been achieved in the solubility and film-forming properties of Poly-4PACz. A uniform single-layer film is coated at a high coating rate of 20 mm / s on a large-area substrate, providing an ideal interface for the solution deposition of the subsequent perovskite light-absorbing layer, significantly improving the film-forming characteristics of the perovskite film and passivating defects, enhancing the optoelectronic performance and long-term stability of the component, and providing a potential technical route for the industrial production of perovskite solar cell components. Description of the Drawings

[0018] Figure 1 It is a structural diagram of a perovskite battery for the preparation method of a perovskite battery with a polymer self-assembled monolayer film in this embodiment;

[0019] Figure 2 It is a chemical structure diagram of Poly-4PACz;

[0020] Figure 3 It is a comparison diagram of atomic force microscopy for Comparative Example 1, Example 1, and Example 4;

[0021] Figure 4 Comparison diagrams of atomic force microscopy for Example 1 with Example 2, Example 3, Example 4, and Example 5;

[0022] Figure 5 It is a comparison diagram of scanning electron microscopy of perovskite for Comparative Example 1;

[0023] Figure 6 It is a comparison diagram of scanning electron microscopy of perovskite for Example 1;

[0024] Figure 7 It is a comparison diagram of scanning electron microscopy of perovskite for Example 2;

[0025] Figure 8 It is a comparison diagram of scanning electron microscopy of perovskite for Example 3;

[0026] Figure 9 It is a comparison diagram of scanning electron microscopy of perovskite for Example 4;

[0027] Figure 10 It is a comparison diagram of scanning electron microscopy of perovskite for Example 5

[0028] Figure 11 Efficiency curve of a perovskite cell with a polymer self-assembled monolayer film;

[0029] Figure 12 Vacuum film formation diagram of Example 4. Detailed implementation mode

[0030] The following examples are provided to better further understand the present invention. It is not limited to the described optimal implementation mode, and does not limit the content and protection scope of the present invention. Any product identical or similar to the present invention obtained by anyone under the inspiration of the present invention or by combining the features of the present invention with those of other prior arts falls within the protection scope of the present invention.

[0031] For those not specifying specific experimental steps or conditions in the examples, the operations or conditions of the conventional experimental steps described in the literature in this field can be followed. For reagents or instruments not indicating the manufacturer, they are all conventional reagent products that can be obtained through commercial purchase.

[0032] The present application provides a preparation method of a perovskite cell with a polymer self-assembled monolayer film. The perovskite cell with a polymer self-assembled monolayer film is suitable for being disposed on an external substrate and includes the following steps: Step 1: Deposit a transparent conductive substrate ① on the substrate, and then prepare a hole transport layer on the conductive substrate ①; Step 2: On the hole transport layer ②, form a polymer self-assembled monolayer ③, and the solute of the precursor solution of the polymer self-assembled monolayer ③ is Poly-4PACz, and the solvent includes ethanol and dimethyl sulfoxide; Step 3: Coat a perovskite precursor material on the polymer self-assembled monolayer ③ to form a perovskite light absorption layer ④; Step 4: Deposit an electron transport material on the perovskite light absorption layer ④ to form an electron transport layer ⑤; Step 5: Deposit a back electrode ⑦ on the electron transport layer ⑤.

[0033] As Figure 1As shown, the substrate serves as the support structure of the perovskite solar cell, and a transparent conductive substrate ① is deposited thereon, which is used as the electrode material for subsequent charge collection and transportation. A hole transport layer ② is prepared on the transparent conductive substrate ① to help holes be effectively transported from the perovskite layer to the electrode. Then, the polymeric hole transport material Poly-4PACz is prepared on the hole transport layer ② to effectively passivate the interface and form a polymeric self-assembled monolayer ③. A perovskite precursor material is coated on the polymeric self-assembled monolayer ③ to form a perovskite light-absorbing layer ④. An electron transport material is deposited on the perovskite light-absorbing layer ④ to form an electron transport layer ⑤ to help electrons be transported from the perovskite layer to the electrode layer. Then, a hole blocking layer ⑥ is prepared on the electron transport layer ⑤ to protect the perovskite light-absorbing layer ④ and the electron transport layer ⑤ and promote the charge collection efficiency. Finally, a back electrode ⑦ is deposited as the top electrode during the entire solar cell, and the fabricated perovskite photovoltaic cell is encapsulated and tested. Encapsulation can prevent the influence of environmental conditions on the device performance, such as changes in light and humidity. The performance of the encapsulated perovskite solar cell also needs to be tested, including the power conversion efficiency (PCE), short-circuit current density (Jsc), open-circuit voltage (Voc), and fill factor (FF), to evaluate the power conversion efficiency and stability during this period.

[0034] According to one aspect of the present application, Poly-4PAC is dissolved in a mixed solvent of ethanol and dimethyl sulfoxide by magnetic stirring to form a polymer solution.

[0035] As Figure 2 shown, in an achievable manner, the solute Poly-4PACz is selected in the precursor solution of the polymeric self-assembled monolayer ③, and the solvent includes EtOH (ethanol) and DMSO (dimethyl sulfoxide).

[0036] According to one aspect of the present application, the volume ratio of the ethanol to the dimethyl sulfoxide is 0.5:1, 0.8:1, 1:1, 1.5:1.

[0037] According to one aspect of the present application, the polymer solution is deposited on the hole transport layer ② by slot coating, vacuum film formation is carried out for 40 seconds, and annealing is carried out at 100 °C for 10 minutes to form a polymeric self-assembled monolayer film.

[0038] Preferably, coating the polymeric self-assembled monolayer ③ on the hole transport layer ② further includes: depositing the precursor solution of the polymeric hole transport material Poly-4PACz on the NiOx layer by slot coating, carrying out vacuum film formation for 40 seconds, and annealing at 100 °C for 10 minutes.

[0039] Preferably, the speed of the slot coating is 20 mm / s.

[0040] According to one aspect of the present application, the substrate is a glass substrate, and one of indium tin oxide thin film and fluorine-doped tin oxide thin film is deposited on the glass substrate to form a transparent conductive substrate ①; on the conductive substrate ①, a nickel oxide thin film is deposited by spin coating or magnetron sputtering to form a hole transport layer ②.

[0041] Depositing the conductive substrate ① on the substrate further includes: the substrate is a glass substrate, and an ITO (indium tin oxide) or FTO (fluorine-doped tin oxide) thin film is deposited on the glass substrate to form a transparent conductive oxide (TCO) coating; preparing the hole transport layer ② on the TCO further includes: depositing a NiOx (nickel oxide) thin film on the conductive substrate ① by spin coating or magnetron sputtering.

[0042] According to one aspect of the present application, the precursor solution of the perovskite light absorption layer ④ is a solution of AX and BX2, and the solvent of the perovskite precursor solution is dimethylformamide and dimethyl sulfoxide; wherein, the A site is composed of any one of cesium, rubidium, potassium, amino group, amidino group or alkali group cations; the B site is composed of any one of divalent metal cations such as lead, tin, tungsten, copper, zinc, gallium, germanium, arsenic, selenium, rhodium, palladium, silver, cadmium, indium, antimony, osmium, iridium, platinum, gold, mercury, thallium, bismuth, polonium; the X site is composed of any one of anions such as chlorine, bromine, iodine, thiocyanate, cyanide, oxycyanide, acetate, azide, borohydride.

[0043] Preferably, in an achievable manner, preparing the perovskite precursor solution further includes: preparing a solution containing perovskite precursor substances AX and BX2, and the solvent of the perovskite precursor solution is DMF and DMSO.

[0044] In an achievable manner, the A site is composed of any one of cesium, rubidium, potassium, amino group, amidino group or alkali group cations, the B site is composed of any one of divalent metal cations such as lead, tin, tungsten, copper, zinc, gallium, germanium, arsenic, selenium, rhodium, palladium, silver, cadmium, indium, antimony, osmium, iridium, platinum, gold, mercury, thallium, bismuth, polonium; the R site is composed of any one of phenethylamine, 1,4-butanediamine, guanidine group; the X site is composed of any one of anions such as chlorine, bromine, iodine, thiocyanate, cyanide, oxycyanide, acetate, azide, borohydride, and the solvent is DMF (dimethylformamide) and DMSO (dimethyl sulfoxide).

[0045] In this embodiment, when preparing the perovskite precursor solution, the perovskite precursor solution contains substances AX and BX2. The perovskite structure is ABX3, where A is any one of cesium, rubidium, potassium, amino group, amidino group or alkali group cations, B is any one of divalent metal cations such as lead, tin, tungsten, copper, zinc, gallium, germanium, arsenic, selenium, rhodium, palladium, silver, cadmium, indium, antimony, osmium, iridium, platinum, gold, mercury, thallium, bismuth, polonium, and X is any one of anions such as chlorine, bromine, iodine, thiocyanate, cyanide, oxycyanide, acetate, azide, borohydride.

[0046] According to one aspect of the present application, a fullerene layer is deposited on the perovskite light absorption layer ④ by thermal evaporation or spin coating to form an electron transport layer; a bathocuproine layer is deposited on the electron transport layer by thermal evaporation or spin coating to form a hole blocking layer ⑥; a metal electrode is deposited on the hole blocking layer ⑥ to form a back electrode, and the material of the back electrode is silver or copper.

[0047] Preparing the hole blocking layer ⑥ on the electron transport layer ⑤ further includes: depositing a bathocuproine layer (BCP) on the electron transport layer ⑤ by thermal evaporation or spin coating, which is used to protect the perovskite layer and the electron transport layer ⑤ and promote the charge collection efficiency. Preparing the back electrode ⑦ on the hole blocking layer ⑥ and encapsulating the perovskite solar cell further includes: depositing a metal electrode on the hole blocking layer ⑥ to complete the preparation of the perovskite solar cell, encapsulating the prepared solar cell, and performing performance tests on the encapsulated perovskite solar cell.

[0048] In an implementable manner, preparing the electron transport layer ⑤ on the perovskite light absorption layer ④ further includes: depositing a fullerene (C60 or PCBM) layer on the perovskite light absorption layer ④ by thermal evaporation or spin coating, which is used as an electron transport material to help electrons transport from the perovskite layer to the electrode layer.

[0049] Preferably, coating the perovskite precursor solution on the polymer self-assembled monolayer ③ further includes: depositing the perovskite precursor solution on the SAM layer by slot coating and annealing at 150 °C for 10 minutes.

[0050] In this embodiment, a metal electrode is deposited on the BCP layer as the top electrode of the entire perovskite solar cell, and the metal electrode is silver or copper. The fabricated perovskite solar cell device is encapsulated to prevent the influence of environmental conditions on the device performance, and performance tests are performed on it, including the photoelectric conversion efficiency (PCE), short-circuit current density (Jsc), open-circuit voltage (Voc), and fill factor (FF), to evaluate the photoelectric conversion efficiency and stability of the device.

[0051] The present invention dissolves Poly-4PACz in an optimized solvent system of EtOH (ethanol) / DMSO (dimethyl sulfoxide), and prepares mixed solvents with volume ratios of ethanol / dimethyl sulfoxide of 0.5:1, 0.8:1, 1:1, and 1.5:1. It is fully dissolved by magnetic stirring. The optimization of the solvent ratio is mainly based on the synergistic effect of surface energy regulation and dissolution kinetic equilibrium. Although the DMSO-rich system has a high dissolution efficiency, the excessive solvent residue leads to the coffee ring effect during the film-forming process. The EtOH-rich system has insufficient dissolution ability, resulting in a decrease in the solution stability. Experiments have found that when the volume ratio of EtOH / DMSO is 1:1, the system exhibits the best synergistic dissolution characteristics: the high polarity of DMSO effectively destroys the π-π stacking between polymer chains, and the moderate volatility of ethanol is conducive to the gradient volatilization process of the solvent in the subsequent coating process. This balance enables the polymer molecules to achieve ordered self-assembly on the substrate surface, forming a dense and uniform monolayer structure.

[0052] The prepared SAM solution can be evenly coated on the surface of the prepared hole transport layer ② by slit coating technology. The kinetic parameters and post-treatment conditions of the slit coating method have a decisive impact on the film quality. In this study, by systematically regulating the coating speed (8 - 30 mm / s) and the thermal annealing temperature (80 - 120 °C), and the distance between the meniscus and the substrate is 120 μm, the relationship between the process parameters and the film morphology, molecular orientation, and device performance is revealed. In terms of optimizing the coating speed, it is found that when the coating speed is lower than 15 mm / s, the solution stays on the substrate surface for too long, and the difference in the solvent volatilization gradient leads to excessive molecular aggregation; when the speed exceeds 25 mm / s, the mismatch between the shear force-induced molecular orientation and the solvent volatilization rate causes an increase in the pinhole defect density. A coating speed of 20 mm / s is preferably selected to balance the action time of the shear force field and the solvent volatilization kinetics. Using the optimized solvent system in the present invention, the repeatability and stability of film formation during large-area coating are achieved at a high coating rate of 20 mm / s. Subsequently, vacuum film formation technology is used for auxiliary treatment for 40 seconds to quickly remove the high-boiling solvent residues such as DMSO and inhibit the formation of coffee rings. Then, thermal annealing treatment is carried out. Due to the high temperature sensitivity of the polymer, to avoid structural damage, the treatment temperature is preferably 100 °C, and the treatment time is 10 min, and a highly uniform self-assembled polymer monolayer film with excellent hole extraction and interface passivation capabilities can be prepared.

[0053] To illustrate the superiority of the highly uniform polymer self-assembled monolayer film of the present application, the following examples are carried out:

[0054] Example 1, Example 2, and Example 3 are all prepared by the same process method as the technical solution of this application. Preferably, here the TCO anode uses ITO, the A-site of the perovskite uses a ternary cationic mixed component of CsFAMA, the B-site is Pb, the X-site is a mixed component of I and Br, Poly-4PACz is dissolved in a mixed solvent of EtOH (ethanol) / DMSO (dimethyl sulfoxide), the volume ratio of the solvent is adjustable, the electron transport layer ⑤ uses PCBM (fullerene derivative), and the back electrode ⑦ uses Ag.

[0055] Comparative Example 1

[0056] Comparative Example 1 is a single dimethyl sulfoxide without a SAM layer. In Comparative Example 1, the perovskite precursor solution is directly deposited on the hole transport layer ②, without a polymer self-assembled monolayer film, and the rest of the preparation process remains unchanged.

[0057] Comparative Example 2

[0058] Comparative Example 1 is a single dimethyl sulfoxide with a SAM layer. In Comparative Example 2, a polymer self-assembled monolayer film is prepared on the hole transport layer ② and subjected to thermal annealing treatment. The treatment temperature is preferably 100 °C and the treatment time is 10 min, and the rest of the preparation process remains unchanged.

[0059] Example 1

[0060] In Example 1, the ratio of ethanol to dimethyl sulfoxide in the mixed solvent is 1:1, and there is a SAM layer.

[0061] Compared with Comparative Example 1 and Comparative Example 2, in Example 1, a polymer self-assembled monolayer film is prepared on the hole transport layer ② and subjected to thermal annealing treatment. The treatment temperature is preferably 100 °C and the treatment time is 10 min, and the rest of the preparation process remains unchanged.

[0062] Example 2

[0063] In Example 2, the ratio of ethanol to dimethyl sulfoxide in the mixed solvent is 0.5:1, and there is a SAM layer. In Example 2, a polymer self-assembled monolayer film is prepared on the hole transport layer ②, first subjected to vacuum film formation treatment for 40 seconds, and then subjected to thermal annealing treatment. The treatment temperature is preferably 100 °C and the treatment time is 10 min, and the rest of the preparation process remains unchanged.

[0064] Example 3

[0065] In Example 3, the ratio of ethanol to dimethyl sulfoxide in the mixed solvent is 0.8:1, and there is a SAM layer. The rest of the steps and conditions are the same as those in Example 2.

[0066] Example 4

[0067] In Example 4, the ratio of ethanol to dimethyl sulfoxide in the mixed solvent is 1:1, and there is a SAM layer. The remaining steps and conditions are the same as those in Example 2.

[0068] Example 5

[0069] In Example 5, the ratio of ethanol to dimethyl sulfoxide in the mixed solvent is 1.5:1, and there is a SAM layer. The remaining steps and conditions are the same as those in Example 2.

[0070] According to Figures 3 - 4 the AFM images of Examples 1, 2, and 3 shown, compared with the single DMSO solvent, the coating thickness uniformity of the mixed solvent system on the 100 cm 2 substrate is significantly improved, and the surface roughness of the film layer is reduced from 30 nm to 10 nm (10 nm for Example 4 and 22 nm for Comparative Example 2). Moreover, in the ethanol / dimethyl sulfoxide solvent system, after vacuum film formation treatment, the coverage uniformity of the edge region is significantly improved compared with traditional thermal annealing.

[0071] The typical photoelectric conversion efficiency of Example 1 is 13.8%. The open-circuit voltage and short-circuit current of Examples 2 and 3 are higher than those of Example 1, and their photoelectric conversion efficiencies are 15.1% and 16.5% respectively, showing a significant improvement, as Figure 6 shown. The test conditions are AM1.5G, 100 mW / cm 2 .

[0072] Figure 7 It shows that the current of Example 3 remains stable within 500 seconds.

[0073] When the above Examples 1, 2, and 3 are placed under an LED light source for J-V curve testing, for Example 3 with the highest efficiency in the present invention, the open-circuit voltage is 1.0 V, the short-circuit current density is 22.62 mA / cm 2 , the fill factor is 73%, and the photoelectric conversion efficiency is 16.5%. For Example 2, the open-circuit voltage is 0.985 V, the short-circuit current density is 22.05 mA / cm 2 , the fill factor is 69%, and the photoelectric conversion efficiency is 15.1%. For Example 1, the open-circuit voltage is 0.923 V, the short-circuit current density is 22.27 mA / cm 2 , the fill factor is 67%, and the photoelectric conversion efficiency is 13.8%, as shown in Table 1.

[0074] Table 1:

[0075]

[0076]

[0077] It should be noted that although a perovskite solar cell with a directional interface perovskite light absorption layer is introduced above by taking this application as an example, those skilled in the art can understand that this application should not be limited thereto. In fact, users can flexibly set each parameter according to their personal preferences and / or actual application scenarios as long as the design is reasonable.

[0078] By means of the technical means of the present invention, due to the innovative ethanol / dimethyl sulfoxide green solvent system, significant improvements have been achieved in the solubility and film-forming properties of the polymer hole transport layer ② material Poly-4PACz. Uniform coating of a single-layer film is achieved at a high coating rate of 20 mm / s on a large-area substrate, providing an ideal interface for the solution method deposition of the subsequent perovskite light absorption layer, significantly improving the film-forming characteristics of the perovskite film and passivating defects, enhancing the optoelectronic performance and long-term stability of the module, and providing a potential technical route for the industrial production of perovskite solar cell modules.

[0079] The above is only a preferred specific embodiment of the present invention, but the protection scope of the present invention is not limited thereto. Any person skilled in the art within the scope disclosed by the present invention, according to the technical solution and its concept of the present invention, makes equivalent substitutions or changes, and should be covered within the protection scope of the present invention.

Claims

1. A method for preparing a perovskite cell having a polymer self-assembled monolayer film, wherein the perovskite cell having a polymer self-assembled monolayer film is suitable for being arranged on an external substrate, characterized in that: The following steps are involved: Step 1: depositing a transparent conductive substrate on a substrate, and then preparing a hole transport layer on the conductive substrate; Step 2: forming a polymer self-assembled monolayer on the hole transport layer, wherein the solute of the precursor solution of the polymer self-assembled monolayer is Poly-4PACz, the solvent includes ethanol and dimethyl sulfoxide, and Poly-4PAC is dissolved in a mixed solvent of ethanol and dimethyl sulfoxide by magnetic stirring to form a polymer solution, and the polymer solution is deposited on the hole transport layer by slit coating, the slit coating speed is 20 mm / s, vacuum film forming is performed for 40 seconds, and annealing is performed at 100° C. for 10 minutes to form a polymer self-assembled monolayer film; Step 3: coating the perovskite precursor material on the polymer self-assembled monolayer and annealing at 150° C. for 10 minutes to form a perovskite light absorption layer; Step 4: depositing an electron transport material on the perovskite light absorption layer to form an electron transport layer; Step 5: depositing a back electrode on the electron transport layer; The volume ratio of the ethanol to dimethyl sulfoxide is 0.5:

1.

2. The method for preparing a perovskite battery having a polymer self-assembled monolayer according to claim 1, characterized in that: The substrate is a glass substrate, and one of an indium tin oxide film and a fluorine-doped tin oxide film is deposited on the glass substrate to form a transparent conductive substrate; A nickel oxide film is deposited on a conductive substrate by spin coating or magnetron sputtering to form a hole transport layer.

3. The method for preparing a perovskite battery having a polymer self-assembled monolayer according to claim 2, characterized in that: The precursor solution of the perovskite light absorption layer is a solution of AX and BX2, and the solvent of the perovskite precursor solution is dimethylamide and dimethyl sulfoxide; Wherein, the A position is composed of cesium, rubidium, potassium, amine, amidine or any cation in the base family; The B position is composed of any divalent metal cation selected from the group consisting of lead, tin, tungsten, copper, zinc, gallium, germanium, arsenic, selenium, rhodium, palladium, silver, cadmium, indium, antimony, osmium, iridium, platinum, gold, mercury, thallium, bismuth, and polonium; The X position is composed of any anion selected from the group consisting of chlorine, bromine, iodine, thiocyanate, cyanide, oxycyanate, acetate, azide, and borohydride.

4. The method for preparing a perovskite battery having a polymer self-assembled monolayer according to claim 3, characterized in that: Depositing a fullerene layer on the perovskite light absorbing layer by thermal evaporation or spin coating to form an electron transport layer; A bath copper layer is deposited on the electron transport layer by thermal evaporation or spin coating to form a hole blocking layer.

5. The method for preparing a perovskite battery having a polymer self-assembled monolayer according to claim 4, characterized in that: A metal electrode is deposited on the hole blocking layer to form a back electrode, and the material of the back electrode is silver or copper.

6. The method for preparing a perovskite battery having a polymer self-assembled monolayer according to claim 5, characterized in that: The chemical structure of Poly-4PACz is:

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