Perovskite solar cell module and preparation method thereof
By placing the electron transport layer and the hole transport layer on the same side of the perovskite absorbing layer in the perovskite solar cell module and connecting it in series through the first electrode layer, direct sunlight reception and current transmission are achieved, solving the problem of low photoelectric conversion efficiency in the prior art, and improving the photoelectric conversion efficiency and power output of the module.
Patent Information
- Application Number
- CN202510010578.3
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2025-01-03
- Publication Date
- 2025-04-18
AI Technical Summary
In the prior art, the photoelectric conversion efficiency of perovskite solar cell modules is low, mainly because the perovskite light absorbing layer needs to pass through a transparent conductive electrode and an electron transport layer to absorb sunlight, resulting in low light utilization, and the resistance of the transparent conductive electrode is large, making it difficult to reduce the battery resistance.
A perovskite solar cell module is designed to achieve direct sunlight reception and current transmission, reducing light loss and internal resistance by placing the electron transport layer and hole transport layer on the same side of the perovskite absorbing layer in each perovskite solar cell and connecting these layers in series through the first electrode layer.
By directly receiving sunlight, the photoelectric conversion efficiency of perovskite solar cells is improved, and the internal resistance of the battery is reduced through series connection, thereby providing higher power output, solving the problem of low photoelectric conversion efficiency in the prior art.
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Figure CN119855365A_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to the technical field of photovoltaic cells, and in particular to a perovskite solar cell assembly and a method for preparing the perovskite solar cell assembly. Background Art
[0002] Perovskite solar cells are a new type of solar cell technology that shows great potential due to its excellent energy conversion efficiency and low cost. The perovskite structural materials used in perovskite solar cells have high extinction coefficient, suitable band gap width, high carrier mobility, high diffusion length and bipolar carrier transport characteristics, etc. Its main structure is ABX3, where the A position is usually an organic cation, the B position is a Pb ion, and the X position is a halogen element.
[0003] The structure of a large-area perovskite solar cell in the prior art generally consists of five parts, which are a transparent conductive electrode, an electron transport layer, a perovskite light-absorbing layer, a hole transport layer, and a metal electrode, which are sequentially stacked. Therefore, the perovskite light-absorbing layer of the perovskite solar cell in the prior art needs to pass through the transparent conductive electrode and the electron transport layer to absorb sunlight, which undoubtedly reduces the utilization rate of sunlight by the perovskite light-absorbing layer, and the resistance of the transparent conductive electrode is relatively large compared to that of the metal electrode, which results in the perovskite solar cell in the prior art being limited by the low light utilization rate and the difficulty in further reducing the battery resistance, thereby hindering the further improvement of the photoelectric conversion efficiency of large-area perovskite solar cell modules. Summary of the invention
[0004] The main purpose of the present invention is to provide a perovskite solar cell module and a method for preparing the perovskite solar cell module to solve the problem of low photoelectric conversion efficiency of the perovskite solar cell module in the prior art.
[0005] In order to achieve the above-mentioned purpose, according to one aspect of the present invention, a perovskite solar cell assembly is provided, comprising a first perovskite solar cell, a second perovskite solar cell and a first electrode layer; wherein the first perovskite solar cell comprises a first perovskite absorption layer, a first electron transport layer and a first hole transport layer, and the first electron transport layer and the first hole transport layer are spaced apart and located on the same side surface of the first perovskite absorption layer; the second perovskite solar cell comprises a second perovskite absorption layer, a second electron transport layer and a second hole transport layer, and the second electron transport layer and the second hole transport layer are spaced apart and located on the same side surface of the second perovskite absorption layer; the first electron transport layer and the second hole transport layer are connected in series through the first electrode layer.
[0006] Optionally, the first perovskite absorption layer and the second perovskite absorption layer have opposite light-receiving surfaces and non-light-receiving surfaces, respectively; the first electron transport layer and the first hole transport layer are located on the same side surface of the first perovskite absorption layer having the non-light-receiving surface; the second electron transport layer and the second hole transport layer are located on the same side surface of the second perovskite absorption layer having the non-light-receiving surface.
[0007] Optionally, the first electrode layer is located on a side of the first electron transport layer away from the first perovskite absorption layer and on a side of the second hole transport layer away from the second perovskite absorption layer.
[0008] Optionally, the perovskite solar cell module also includes: a second electrode layer, located on a side of the first hole transport layer away from the first perovskite absorption layer; a third electrode layer, located on a side of the second electron transport layer away from the second perovskite absorption layer, and the second electrode layer, the first electrode layer and the third electrode layer are spaced apart along a first direction, and the first direction is the direction from the first electron transport layer to the first hole transport layer.
[0009] Optionally, the first hole transport layer, the first electron transport layer, the second hole transport layer and the second electron transport layer are arranged at intervals along the first direction.
[0010] Optionally, there is a first gap between the first electron transport layer and the first hole transport layer, there is a second gap between the first electrode layer and the second electrode layer, the first gap is connected to the second gap, and the first perovskite absorption layer fills the first gap and the second gap.
[0011] Optionally, a third gap is provided between the first perovskite absorption layer and the second perovskite absorption layer, a fourth gap is provided between the first electron transport layer and the second hole transport layer, and the third gap and the fourth gap are connected to the first electrode layer.
[0012] Optionally, materials of the first electrode layer, the second electrode layer and the third electrode layer are independently selected from at least one of the following: a metal material and a transparent conductive material.
[0013] According to another aspect of the present invention, a method for preparing a perovskite solar cell module is provided, the method comprising: providing a semiconductor substrate; sequentially forming an electrode material layer, a plurality of electron transport layers and a plurality of hole transport layers on one side of the semiconductor substrate, wherein the electron transport layers and the hole transport layers are spaced along a preset direction and alternately located on the same side surface of the electrode material layer; using a first laser scribing process to etch the electrode material layer to the semiconductor substrate along the interval between two adjacent hole transport layers and electron transport layers in the preset direction to form a first electrode layer, the first electrode layer electrically connecting the first electron transport layer and the second hole transport layer, wherein a hole transport layer located on a side of the first electron transport layer away from the second hole transport layer and adjacent to the first electron transport layer is the first hole transport layer. The method comprises the following steps: forming a perovskite material layer on a side of the first electron transport layer and the second hole transport layer away from the electrode material layer; etching the perovskite material layer by a second laser scribing process to align the gap between the first electron transport layer and the second hole transport layer to form a first perovskite absorption layer and a second perovskite absorption layer, wherein the first perovskite absorption layer covers the first electron transport layer and the first hole transport layer, and the second perovskite absorption layer covers the second electron transport layer and the second hole transport layer.
[0014] Optionally, the multiple electron transport layers and the multiple hole transport layers include a first hole transport layer, a first electron transport layer, a second hole transport layer and a second electron transport layer arranged side by side along a preset direction, and the step of forming a first electrode layer includes: etching the electrode material layer to the semiconductor substrate along the gap between the first hole transport layer and the first electron transport layer, and etching the electrode material to the semiconductor substrate along the gap between the second hole transport layer and the second electron transport layer to form a first electrode layer; a portion of the electrode material layer located on the side of the first hole transport layer away from the first perovskite absorption layer forms a second electrode layer, and a portion of the electrode material layer located on the side of the second electron transport layer away from the second perovskite absorption layer forms a third electrode layer.
[0015] The technical solution of the present invention is applied to provide a perovskite solar cell assembly, including a first perovskite solar cell, a second perovskite solar cell and a first electrode layer, wherein, since the first electron transport layer and the first hole transport layer of the first perovskite solar cell are located on the same side of the first perovskite absorption layer, the second electron transport layer and the second hole transport layer of the second perovskite solar cell are located on the same side of the second perovskite absorption layer, so for the first perovskite solar cell, sunlight can be directly received by the first perovskite absorption layer, for the second perovskite solar cell, sunlight can be directly received by the second perovskite absorption layer, reducing the loss of sunlight, thereby improving the photoelectric conversion efficiency of the first perovskite solar cell and the second perovskite solar cell. In addition, the perovskite solar cell assembly of the present application also includes a first electrode layer, by using the first electrode layer to electrically connect the first electron transport layer of the first perovskite solar cell and the second hole transport layer of the second perovskite solar cell, the first perovskite solar cell and the second perovskite solar cell are connected in series, so that a higher power output can be provided, solving the problem of low photoelectric conversion efficiency of the perovskite solar cell assembly in the prior art. BRIEF DESCRIPTION OF THE DRAWINGS
[0016] The accompanying drawings constituting a part of the present invention are used to provide a further understanding of the present invention. The exemplary embodiments of the present invention and their descriptions are used to explain the present invention and do not constitute an improper limitation of the present invention. In the accompanying drawings:
[0017] Figure 1 A schematic cross-sectional structure diagram of a perovskite solar cell module according to an embodiment of the present invention is shown;
[0018] Figure 2 A schematic structural diagram of a perovskite solar cell module prepared according to a method for preparing a perovskite solar cell module according to an embodiment of the present invention is shown;
[0019] Figure 3 A schematic diagram showing a preset mask for forming an electron transport layer or a hole transport layer.
[0020] The above drawings include the following reference numerals:
[0021] 100, first electrode layer; 200, first perovskite solar cell; 201, first hole transport layer; 202, first electron transport layer; 203, first perovskite absorption layer; 204, second electrode layer; 300, second perovskite solar cell; 301, second electron transport layer; 302, second hole transport layer; 303, second perovskite absorption layer; 304, third electrode layer; 11, glass substrate; 12, transparent electrode layer; 13, copper metal electrode layer; 14, electron transport layer; 15, hole transport layer; 16, perovskite absorption layer; 17, mask plate. DETAILED DESCRIPTION
[0022] It should be noted that, in the absence of conflict, the embodiments of the present invention and the features in the embodiments can be combined with each other. The present invention will be described in detail below with reference to the accompanying drawings and in combination with the embodiments.
[0023] In order to enable those skilled in the art to better understand the scheme of the present invention, the technical scheme in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work should fall within the scope of protection of the present invention.
[0024] It should be noted that the terms "first", "second", etc. in the specification and claims of the present invention and the above-mentioned drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence. It should be understood that the data used in this way can be interchanged where appropriate, so as to describe the embodiments of the present invention described herein. In addition, the terms "including" and "having" and any variations thereof are intended to cover non-exclusive inclusions, for example, a process, method, system, product or device that includes a series of steps or units is not necessarily limited to those steps or units clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices.
[0025] As described in the background art, the structure of a large-area perovskite solar cell in the prior art is generally composed of five parts: a transparent conductive electrode, an electron transport layer, a perovskite light-absorbing layer, a hole transport layer, and a metal electrode that are stacked in sequence. Therefore, the perovskite light-absorbing layer of the perovskite solar cell in the prior art needs to pass through the transparent conductive electrode and the electron transport layer to absorb sunlight, which undoubtedly reduces the utilization rate of sunlight by the perovskite light-absorbing layer, and the resistance of the transparent conductive electrode is relatively large compared to the metal electrode, resulting in the perovskite solar cell in the prior art being limited by the low light utilization rate and the difficulty in further reducing the battery resistance, thereby hindering the further improvement of the photoelectric conversion efficiency of a large-area perovskite solar cell module. In order to solve the problem of low photoelectric conversion efficiency of a perovskite solar cell module in the prior art, the present application provides a perovskite solar cell module and a method for preparing a perovskite solar cell module.
[0026] In some optional embodiments, the present application provides a perovskite solar cell module, such as Figure 1 As shown, it includes a first perovskite solar cell 200, a second perovskite solar cell 300 and a first electrode layer 100; wherein the first perovskite solar cell 200 includes a first perovskite absorption layer 203, a first electron transport layer 202 and a first hole transport layer 201, and the first electron transport layer 202 and the first hole transport layer 201 are spaced apart and located on the same side surface of the first perovskite absorption layer 203; the second perovskite solar cell 300 includes a second perovskite absorption layer 303, a second electron transport layer 301 and a second hole transport layer 302, and the second electron transport layer 301 and the second hole transport layer 302 are spaced apart and located on the same side surface of the second perovskite absorption layer 303; the first electron transport layer 202 and the second hole transport layer 302 are connected in series through the first electrode layer 100.
[0027] Specifically, the materials of the first electron transport layer 202 and the second electron transport layer 301 may be the same or different; the materials of the first hole transport layer 201 and the second hole transport layer 302 may be the same or different; the materials of the first perovskite absorption layer 203 and the second perovskite absorption layer 303 may be the same or different.
[0028] Specifically, the first electrode layer 100 can be a metal layer or a transparent conductive layer. It is mentioned here that since the hole transport layer, the perovskite absorption layer and the electron transport layer of the perovskite solar cell module in the prior art are sequentially stacked, the sunlight absorbed by the perovskite absorption layer must pass through the hole transport layer or the electron transport layer to enter the perovskite absorption layer, so that in order to improve the light transmittance of the perovskite solar cell module in the prior art, a transparent electrode layer is usually provided on the side of the hole transport layer (or the electron transport layer) away from the perovskite absorption layer, but because the resistance of the transparent conductive layer is large, the internal series resistance of the perovskite solar cell module is increased. The first electrode layer 100 of the perovskite solar cell module in the present application does not need to consider improving the light transmittance of the perovskite solar cell module, so a metal layer with a smaller resistance can be used, so that the perovskite solar cell module can have a lower internal series resistance than the perovskite solar cell module in the prior art.
[0029] In the above embodiment, since the first electron transport layer 202 and the first hole transport layer 201 of the first perovskite solar cell 200 are located on the same side of the first perovskite absorption layer 203, and the second electron transport layer 301 and the second hole transport layer 302 of the second perovskite solar cell 300 are located on the same side of the second perovskite absorption layer 303, for the first perovskite solar cell 200, sunlight can be directly received by the first perovskite absorption layer 203, and for the second perovskite solar cell 300, sunlight can be directly received by the second perovskite absorption layer 303, thereby reducing the loss of sunlight, thereby improving the photoelectric conversion efficiency of the first perovskite solar cell 200 and the second perovskite solar cell 300. In addition, the perovskite solar cell module of the present application also includes a first electrode layer 100. By using the first electrode layer 100 to electrically connect the first electron transport layer 202 of the first perovskite solar cell 200 and the second hole transport layer 302 of the second perovskite solar cell 300, the series connection of the first perovskite solar cell 200 and the second perovskite solar cell 300 is achieved, thereby providing higher power output and solving the problem of low photoelectric conversion efficiency of perovskite solar cell modules in the prior art.
[0030] The first perovskite absorption layer 203 and the second perovskite absorption layer 303 respectively have relative light-receiving surfaces and non-light-receiving surfaces; in order to prevent the first hole transport layer 201 and the first electron transport layer 202 from affecting the absorption of sunlight by the first perovskite absorption layer 203, the first electron transport layer 202 and the first hole transport layer 201 are spaced apart and located on the same side surface of the first perovskite absorption layer 203 having the non-light-receiving surface; similarly, in order to prevent the second electron transport layer 301 and the second hole transport layer 302 from affecting the absorption of sunlight by the second perovskite absorption layer 303, the second electron transport layer 301 and the second hole transport layer 302 are spaced apart and located on the same side surface of the second perovskite absorption layer 303 having the non-light-receiving surface.
[0031] In some optional embodiments, such as Figure 1 As shown, the first electrode layer 100 is disposed in contact with the first electron transport layer 202 and the second hole transport layer 302 , respectively, so that the first perovskite solar cell 200 and the second perovskite solar cell 300 are connected in series.
[0032] Further, in some optional embodiments, such as Figure 1 As shown, the first electrode layer 100 may be located on a side of the first electron transport layer 202 away from the first perovskite absorption layer 203 and a side of the second hole transport layer 302 away from the second perovskite absorption layer 303 .
[0033] Specifically, the side of the first electron transport layer 202 away from the first perovskite absorption layer 203 is the side of the first perovskite solar cell 200 with a non-light-receiving surface, and the side of the second hole transport layer 302 away from the second perovskite absorption layer 303 is the side of the second perovskite solar cell 300 with a non-light-receiving surface. In the above embodiment, by disposing the first electrode layer 100 on the side of the first electron transport layer 202 away from the first perovskite absorption layer 203 and the side of the second hole transport layer 302 away from the second perovskite absorption layer 303, the light transmittance of the perovskite solar cell module irradiated to the first perovskite absorption layer 203 and the second perovskite absorption layer 303 can be higher.
[0034] In some optional embodiments, the perovskite solar cell assembly further comprises: Figure 1 As shown, the second electrode layer 204 is located on the side of the first hole transport layer 201 away from the first perovskite absorption layer 203; the third electrode layer 304 is located on the side of the second electron transport layer 301 away from the second perovskite absorption layer 303, and the first electrode layer 100, the second electrode layer 204 and the third electrode layer 304 are arranged at intervals.
[0035] Specifically, the perovskite solar cell module includes a first electrode layer 100, a second electrode layer 204 and a third electrode layer 304 arranged along an interval, a first hole transport layer 201 located on the second electrode layer 204, a first electron transport layer 202 and a second hole transport layer 302 located on the first electrode layer 100, and a second electron transport layer 301 located on the third electrode layer 304. The first hole transport layer 201, the first electron transport layer 202, the second hole transport layer 302 and the second electron transport layer 301 are located on the same side of any electrode layer (the first electrode layer 100, the second electrode layer 204 or the third electrode layer 304), the first perovskite absorption layer 203 is located on a side of the first hole transport layer 201 away from the second electrode layer 204 and a side of the first electron transport layer 202 away from the first electrode layer 100, and the second perovskite absorption layer 303 is located on a side of the second hole transport layer 302 away from the first electrode layer 100 and a side of the second electron transport layer 301 away from the third electrode layer 304.
[0036] In the above embodiment, since the first electrode layer 100 connects the first electron transport layer 202 and the second hole transport layer 302 in series, after the first electrode layer 100 is used to transport the electrons collected by the first electron transport layer 202, the electrons can also be allowed to be transported to the second perovskite solar cell 300. Further, the second electrode layer 204 can be arranged in contact with the side of the first hole transport layer 201 away from the first perovskite absorption layer 203, and is used to transmit the holes collected by the first hole transport layer 201 to the external circuit of the perovskite solar cell assembly. The third electrode layer 304 can be arranged in contact with the side of the second electron transport layer 301 away from the second perovskite absorption layer 303, and is used to transmit the electrons collected by the second electron transport layer 301 to the external circuit of the perovskite solar cell assembly, so that the external circuit can form a closed circuit with the first perovskite solar cell 200 and the second perovskite solar cell 300 connected in series through the above-mentioned first electrode layer 100, the second electrode layer 204 and the third electrode layer 304.
[0037] Alternatively, if Figure 1 As shown, the materials of the first electrode layer 100, the second electrode layer 204 and the third electrode layer 304 may be the same or different. Furthermore, the materials of the first electrode layer 100, the second electrode layer 204 and the third electrode layer 304 may be independently selected from at least one of the following: a metal material and a transparent conductive material.
[0038] Among them, Figure 1 As shown, the direction from the first hole transport layer 201 to the first electron transport layer 202 is the first direction.
[0039] In some optional embodiments, such as Figure 1As shown, the first hole transport layer 201 , the first electron transport layer 202 , the second hole transport layer 302 and the second electron transport layer 301 may be arranged at intervals along the first direction.
[0040] In other optional embodiments, the first hole transport layer 201 and the first electron transport layer 202 are arranged at intervals along the first direction, the second hole transport layer 302 and the second electron transport layer 301 are arranged at intervals along the first direction, the first hole transport layer 201 and the second electron transport layer 301 can be arranged at intervals along the second direction, and the first electron transport layer 202 and the second hole transport layer 302 can be arranged at intervals along the second direction, wherein the second direction is perpendicular to the first direction.
[0041] Optionally, in some other embodiments, the first hole transport layer 201 and the first electron transport layer 202 are arranged at intervals along the first direction, the second hole transport layer 302 and the second electron transport layer 301 are arranged at intervals along the first direction, and the first electron transport layer 202 and the second hole transport layer 302 are arranged at intervals along the second direction.
[0042] In some optional embodiments, such as Figure 1 As shown, in order to separate the first electron transport layer 202 and the first hole transport layer 201 of the first perovskite solar cell 200, a first gap is provided between the first electron transport layer 202 and the first hole transport layer 201, a second gap is provided between the first electrode layer 100 and the second electrode layer 204, the first gap is connected with the second gap, and the first perovskite absorption layer 203 fills the first gap and the second gap.
[0043] Specifically, the first electrode serves as the cathode of the first perovskite solar cell 200, and the second electrode serves as the anode of the first perovskite solar cell 200. Therefore, there is a second gap between the first electrode layer 100 and the second electrode layer 204, and the first electrode is arranged in contact with the first electron transport layer 202, and the second electrode is arranged in contact with the first hole transport layer 201. Therefore, in order to avoid the first electrode from contacting the first hole transport layer 201, the second electrode is in contact with the first electron transport layer 202, and the first gap and the second gap are connected.
[0044] In some optional embodiments, such as Figure 1As shown, in order to separate the first perovskite solar cell 200 and the second perovskite solar cell 300, a third gap is provided between the first perovskite absorption layer 203 and the second perovskite absorption layer 303, a fourth gap is provided between the first electron transport layer 202 and the second hole transport layer 302, and the third gap and the fourth gap are connected to the first electrode layer 100.
[0045] Specifically, since the first electron transport layer 202 is used to collect electrons of the first perovskite solar cell 200, and the second hole transport layer 302 is used to collect holes of the second perovskite solar cell 300, in order to avoid non-radiative recombination, a fourth gap is provided between the first electron transport layer 202 and the second hole transport layer 302, and since the first perovskite solar cell 200 and the second perovskite solar cell 300 are connected in series, in order to avoid the electrons in the perovskite solar cell module bypassing the external circuit and flowing directly from the cathode of the first perovskite solar cell 200 to the anode of the second perovskite solar cell 300, causing a short circuit, the third gap and the fourth gap are connected.
[0046] Similarly, in some optional embodiments, such as Figure 1 As shown, in order to separate the second electron transport layer 301 and the second hole transport layer 302 of the second perovskite solar cell 300, a fifth gap is provided between the second electron transport layer 301 and the second hole transport layer 302, a sixth gap is provided between the first electrode layer 100 and the third electrode layer 304, the fifth gap is connected with the sixth gap, and the second perovskite absorption layer 303 fills the fifth gap and the sixth gap.
[0047] Specifically, the first electrode serves as the anode of the second perovskite solar cell 300, and the third electrode serves as the cathode of the second perovskite solar cell 300. Therefore, there is a sixth gap between the first electrode layer 100 and the third electrode layer 304, and the first electrode is arranged in contact with the second hole transport layer 302, and the third electrode is arranged in contact with the second electron transport layer 301. Therefore, in order to avoid the first electrode from contacting the second electron transport layer 301, the third electrode is in contact with the second hole transport layer 302, and the fifth gap and the sixth gap are connected.
[0048] In some optional embodiments, the present application also provides a method for preparing a perovskite solar cell module, the preparation method comprising: providing a semiconductor substrate; sequentially forming an electrode material layer, multiple electron transport layers and multiple hole transport layers on one side of the above-mentioned semiconductor substrate, the above-mentioned electron transport layers and the above-mentioned hole transport layers are spaced along a preset direction and alternately located on the same side surface of the above-mentioned electrode material layer; using a first laser scribing process to etch the above-mentioned electrode material layer to the above-mentioned semiconductor substrate along the interval between two adjacent above-mentioned hole transport layers and the above-mentioned electron transport layers in the above-mentioned preset direction to form a first electrode layer, the above-mentioned first electrode layer is electrically connected to the first electron transport layer and the second hole transport layer, wherein one of the above-mentioned hole transport layers located on the side of the above-mentioned first electron transport layer away from the above-mentioned second hole transport layer and adjacent to the above-mentioned first electron transport layer is the first hole transport layer, and the above-mentioned hole transport layer located on the side of the above-mentioned first electron transport layer away from the above-mentioned second hole transport layer is the first hole transport layer. The electron transport layer on the side of the second hole transport layer away from the first electron transport layer and adjacent to the second hole transport layer is the second electron transport layer, the multiple electron transport layers include the first electron transport layer and the second electron transport layer, and the multiple hole transport layers include the first hole transport layer and the second hole transport layer; a perovskite material layer is formed on the side of the first electron transport layer and the second hole transport layer away from the electrode material layer; a second laser scribing process is used to align the gap between the first electron transport layer and the second hole transport layer to etch the perovskite material layer to form a first perovskite absorption layer and a second perovskite absorption layer, the first perovskite absorption layer covers the first electron transport layer and the first hole transport layer, and the second perovskite absorption layer covers the second electron transport layer and the second hole transport layer.
[0049] Specifically, the formation order of the first electron transport layer and the second electron transport layer can be interchanged, and this application does not specifically limit it. The first electron transport layer and the second electron transport layer can be formed in the same process step. The first hole transport layer and the second hole transport layer can be formed in the same process step.
[0050] Specifically, the electron transport layer and the hole transport layer can be formed based on a preset mask, so that a plurality of electron transport layers and a plurality of hole transport layers spaced apart and alternately arranged along a preset direction can be formed on the surface of the electrode material layer away from the semiconductor substrate.
[0051] In the above-mentioned embodiment, after first forming an electron transport layer and a hole transport layer on the side of the electrode material layer away from the semiconductor substrate, since there is a gap between the electron transport layer and the hole transport layer, the position of the first electrode layer can be determined based on the gap between the electron transport layer and the hole transport layer, and then in the process of etching the first electrode layer by the first laser scribing process, it is only necessary to etch along the gap between the electron transport layer and the hole transport layer to form the first electrode layer, thereby simplifying the manufacturing process. Further, after forming a perovskite material layer on the side of the electron transport layer and the hole transport layer away from the electrode material layer, since there is a gap between the electron transport layer and the hole transport layer, in the process of etching the perovskite material layer by the second laser scribing process along the gap between the first hole transport layer and the second electron transport layer, it is only necessary to align the gap and etch the perovskite material layer to achieve the separation of the first perovskite absorption layer and the second perovskite absorption layer, thereby obtaining the perovskite solar cell module of the present application. It can be seen that through the present application, only two laser scribing processes are required to achieve the preparation of perovskite solar cell modules, so the preparation efficiency of perovskite solar cell modules can be greatly improved.
[0052] In some optional embodiments, the plurality of electron transport layers and the plurality of hole transport layers include a first hole transport layer, a first electron transport layer, a second hole transport layer and a second electron transport layer arranged side by side along the preset direction. In order to enable the first perovskite solar cell and the second perovskite solar cell to be connected in series through a common electrode layer, the step of forming the first electrode layer includes: etching the electrode material layer to the semiconductor substrate along the gap between the first hole transport layer and the first electron transport layer, and etching the electrode material to the semiconductor substrate along the gap between the second hole transport layer and the second electron transport layer to form the first electrode layer; a portion of the electrode material layer located on the side of the first hole transport layer away from the first perovskite absorption layer forms a second electrode layer, and a portion of the electrode material layer located on the side of the second electron transport layer away from the second perovskite absorption layer forms a third electrode layer.
[0053] A perovskite solar cell module (such as Figure 2 As shown, the specific preparation process includes a glass substrate 11, a transparent electrode layer 12, a copper metal electrode layer 13, an electron transport layer 14, a hole transport layer 15, and a perovskite absorption layer 16):
[0054] A copper metal electrode layer 13 is deposited on the glass substrate by vacuum evaporation. The thickness of the copper metal electrode layer 13 is 200 nm (the copper metal electrode layer 13 can also be deposited on the glass substrate 11 having the transparent electrode layer 12).
[0055] A hole transport layer 15 (NiO x ) is deposited with a deposition thickness of 50nm.
[0056] like Figure 3 As shown, the NiO is deposited on the glass substrate 11 by means of a mask plate 17. x The portion (hole transport layer 15) is masked, and the electron transport layer 14 (C 60 ) is deposited with a deposition thickness of 50nm.
[0057] The first laser scribing is performed, and the scribing position is the hole transport layer 15 (NiO x ) and the electron transport layer 14 (C 60 ), the scratching depth reaches the glass substrate 11.
[0058] In the hole transport layer 15 (NiO x ) and the electron transport layer 14 (C 60 ) is coated with a perovskite material layer by slit coating, and then low-temperature annealing is performed at a temperature of 150° C., and finally a perovskite absorption layer 16 of about 500 nm is prepared.
[0059] A second laser scribing is performed on the perovskite absorption layer 16 . The scribing position is between the perovskite sub-cells, and the scribing depth reaches the copper metal electrode layer 13 .
[0060] The useless parts of the perovskite cell are cleaned by laser edge cleaning.
[0061] From the above description, it can be seen that the above embodiments of the present invention achieve the following technical effects:
[0062] Since the first electron transport layer and the first hole transport layer of the first perovskite solar cell are located on the same side of the first perovskite absorption layer, and the second electron transport layer and the second hole transport layer of the second perovskite solar cell are located on the same side of the second perovskite absorption layer, for the first perovskite solar cell, sunlight can be directly received by the first perovskite absorption layer, and for the second perovskite solar cell, sunlight can be directly received by the second perovskite absorption layer, reducing the loss of sunlight, thereby improving the photoelectric conversion efficiency of the first perovskite solar cell and the second perovskite solar cell. In addition, the perovskite solar cell module of the present application also includes a first electrode layer, and the first electron transport layer of the first perovskite solar cell and the second hole transport layer of the second perovskite solar cell are electrically connected by using the first electrode layer, so as to realize the series connection of the first perovskite solar cell and the second perovskite solar cell, thereby providing a higher power output, solving the problem of low photoelectric conversion efficiency of the perovskite solar cell module in the prior art.
[0063] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. For those skilled in the art, the present invention may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention shall be included in the protection scope of the present invention.
Claims
1. A perovskite solar cell module, characterized in that: It includes a first perovskite solar cell, a second perovskite solar cell and a first electrode layer; wherein, The first perovskite solar cell comprises a first perovskite absorption layer, a first electron transport layer and a first hole transport layer, wherein the first electron transport layer and the first hole transport layer are spaced apart and located on the same side surface of the first perovskite absorption layer; The second perovskite solar cell comprises a second perovskite absorption layer, a second electron transport layer and a second hole transport layer, wherein the second electron transport layer and the second hole transport layer are spaced apart and located on the same side surface of the second perovskite absorption layer; The first electron transport layer and the second hole transport layer are connected in series through the first electrode layer.
2. The perovskite solar cell assembly according to claim 1, characterized in that: The first perovskite absorption layer and the second perovskite absorption layer respectively have a light-receiving surface and a non-light-receiving surface opposite to each other; The first electron transport layer and the first hole transport layer are spaced apart and located on the same side surface of the first perovskite absorption layer having the non-light-receiving surface; The second electron transport layer and the second hole transport layer are spaced apart and located on the same side surface of the second perovskite absorption layer having the non-light-receiving surface.
3. The perovskite solar cell assembly according to claim 1 or 2, characterized in that: The first electrode layer is located on a side of the first electron transport layer away from the first perovskite absorption layer and on a side of the second hole transport layer away from the second perovskite absorption layer.
4. The perovskite solar cell assembly according to claim 3, characterized in that: Also includes: A second electrode layer, located on a side of the first hole transport layer away from the first perovskite absorption layer; The third electrode layer is located on a side of the second electron transport layer away from the second perovskite absorption layer, and the first electrode layer, the second electrode layer and the third electrode layer are arranged at intervals.
5. The perovskite solar cell assembly according to claim 4, characterized in that: The direction from the first hole transport layer to the first electron transport layer is a first direction, and the first hole transport layer, the first electron transport layer, the second hole transport layer and the second electron transport layer are arranged at intervals along the first direction.
6. The perovskite solar cell assembly according to claim 4, characterized in that: There is a first gap between the first electron transport layer and the first hole transport layer, there is a second gap between the first electrode layer and the second electrode layer, the first gap is connected to the second gap, and the first perovskite absorption layer fills the first gap and the second gap.
7. The perovskite solar cell module according to claim 4, characterized in that: A third gap is provided between the first perovskite absorption layer and the second perovskite absorption layer, a fourth gap is provided between the first electron transport layer and the second hole transport layer, and the third gap and the fourth gap are connected to the first electrode layer.
8. The perovskite solar cell module according to claim 4, characterized in that: Materials of the first electrode layer, the second electrode layer and the third electrode layer are independently selected from at least one of the following: a metal material and a transparent conductive material.
9. A method for preparing a perovskite solar cell module, characterized in that: include: providing a semiconductor substrate; An electrode material layer, a plurality of electron transport layers and a plurality of hole transport layers are sequentially formed on one side of the semiconductor substrate, wherein the electron transport layers and the hole transport layers are spaced apart along a preset direction and are alternately located on the same side surface of the electrode material layer; The electrode material layer is etched to the semiconductor substrate along the interval between the two adjacent hole transport layers and the electron transport layers in the preset direction by a first laser scribing process to form a first electrode layer, wherein the first electrode layer is electrically connected to the first electron transport layer and the second hole transport layer, wherein one of the hole transport layers located on the side of the first electron transport layer away from the second hole transport layer and adjacent to the first electron transport layer is the first hole transport layer, and one of the electron transport layers located on the side of the second hole transport layer away from the first electron transport layer and adjacent to the second hole transport layer is the second electron transport layer, the plurality of electron transport layers include the first electron transport layer and the second electron transport layer, and the plurality of hole transport layers include the first hole transport layer and the second hole transport layer; forming a perovskite material layer on a side of the first electron transport layer and the second hole transport layer away from the electrode material layer; A second laser scribing process is used to align the gap between the first electron transport layer and the second hole transport layer to etch the perovskite material layer to form a first perovskite absorption layer and a second perovskite absorption layer, wherein the first perovskite absorption layer covers the first electron transport layer and the first hole transport layer, and the second perovskite absorption layer covers the second electron transport layer and the second hole transport layer.
10. The preparation method according to claim 9, characterized in that: The plurality of electron transport layers and the plurality of hole transport layers include a first hole transport layer, a first electron transport layer, a second hole transport layer and a second electron transport layer arranged side by side along the preset direction, and the step of forming the first electrode layer includes: Etching the electrode material layer to the semiconductor substrate along the space between the first hole transport layer and the first electron transport layer, and etching the electrode material layer to the semiconductor substrate along the space between the second hole transport layer and the second electron transport layer to form the first electrode layer; A portion of the electrode material layer located on a side of the first hole transport layer away from the first perovskite absorption layer forms a second electrode layer, and a portion of the electrode material layer located on a side of the second electron transport layer away from the second perovskite absorption layer forms a third electrode layer.