Detection method for judging scribing failure of perovskite solar cell P2

Abstract

The invention discloses a detection method for judging lineation failure of a perovskite solar cell P2, and belongs to the technical field of perovskite solar cell detection. A to-be-detected perovskite solar cell comprises a first electrode layer, a functional layer and a second electrode layer which are sequentially stacked, the first electrode layer is provided with a P1 etching line, the functional layer is provided with a P2 etching line, and the second electrode layer is provided with a P3 etching line, so that the perovskite solar cell forms a series structure comprising at least two groups of sub-cells; selecting any two adjacent groups of sub-cells in the perovskite solar cell, defining the sub-cells as a first sub-cell and a second sub-cell, determining a first test point on the surface of the second electrode layer in the first sub-cell, and determining a second test point on the surface of the first electrode layer in the second sub-cell; the resistance R between the two test points is measured, the resistance R1 of the first electrode layer of the second sub-cell is measured, when 0 < = R-R1 < = 1 omega, the P2 scribing is effective, and when R-R1 > 1 omega, the P2 scribing is invalid.

Description

Technical Field

[0001] The present invention relates to the technical field of perovskite solar cell detection, and in particular to a detection method for judging P2 scribing failure of a perovskite solar cell. Background Art

[0002] Perovskite solar cells have shown great application potential in the field of renewable energy due to their efficient photoelectric conversion capabilities and low-cost manufacturing processes. During the production process, laser technology is widely used in the preparation of perovskite solar cells to carve out grooves of different depths to realize the component structure of sub-cells in series. Among them, the most critical scribing area for building the series structure is the P2 scribing. However, P2 scribing may often fail due to a variety of reasons (such as improper laser parameters, uneven material thickness, poor laser output power stability, etc.), thereby affecting the overall performance and reliability of the battery. At the same time, compared with the advantages of P1 and P3 scribing, which can be quickly detected by step depth and other methods, P2 scribing cannot quickly and accurately judge its effectiveness, and the detection efficiency is low.

[0003] In the prior art, the tools used to detect whether the P2 line is invalid include but are not limited to confocal microscopes, step profilers, scanning electron microscopes, etc. The equipment is expensive and complicated to operate, requires professional personnel to analyze and can only perform single-point analysis, which cannot meet the requirements of industrial batch and large-area detection. Therefore, there is an urgent need to develop a simple, convenient and highly accurate P2 line detection method. Summary of the invention

[0004] The main purpose of the present invention is to provide a detection method for judging the failure of P2 scribing of a perovskite solar cell, so as to solve the technical problem that it is difficult to quickly and accurately judge the effectiveness of P2 scribing in the prior art.

[0005] To achieve the above object, the present invention provides a detection method for judging failure of P2 scribing of a perovskite solar cell, wherein the perovskite solar cell comprises a first electrode layer, a functional layer, and a second electrode layer stacked in sequence, wherein the first electrode layer has a P1 etched line, the functional layer has a P2 etched line staggered from the P1 etched line, and the second electrode layer has a P3 etched line on a side of the P2 etched line away from the P1 etched line, so that the perovskite solar cell forms a series structure including at least two groups of sub-cells;

[0006] The detection method for determining whether the scribing of the perovskite solar cell P2 is failed comprises at least the following steps:

[0007] Select any two adjacent groups of sub-cells in the perovskite solar cell, respectively define them as a first sub-cell and a second sub-cell, determine a first test point on the surface of the second electrode layer in the first sub-cell, and determine a second test point on the surface of the first electrode layer in the second sub-cell;

[0008] The resistance R between the first test point and the second test point is measured, and the resistance R1 of the first electrode layer of the second sub-battery is measured. When 0≤R-R1≤1Ω, the P2 marking is judged to be valid, and when R-R1>1Ω, the P2 marking is judged to be invalid.

[0009] In some embodiments of the present invention, two probes of a multimeter are connected to the first test point and the second test point respectively to measure the resistance R between the first test point and the second test point.

[0010] In some embodiments of the present invention, the first electrode layer is etched by laser to form the P1 etching line;

[0011] and / or, etching the functional layer using a laser to form the P2 etching line;

[0012] and / or, etching the second electrode layer by laser to form the P3 etching line;

[0013] And / or, the material for preparing the second electrode layer includes at least one of ITO, Cu, Ag, and Au;

[0014] And / or, the functional layer includes a first transport layer, a perovskite active layer and a second transport layer stacked in sequence.

[0015] In some embodiments of the present invention, the P3 etching line further extends from the second electrode layer to the functional layer in a direction perpendicular to the first electrode layer.

[0016] In some embodiments of the present invention, the laser wavelength of the P1 etching line formed by laser etching is 1064 nm;

[0017] And / or, the laser wavelength of the P2 etching line formed by laser etching is 532nm;

[0018] And / or, the laser wavelength of the P3 etching line formed by laser etching is 532 nm.

[0019] In some embodiments of the present invention, laser is used to clean the periphery of the sequentially stacked functional layer and the second electrode layer and expose the first electrode layer to obtain the P4 region.

[0020] In some embodiments of the present invention, the second test point is determined in the P4 area.

[0021] In some embodiments of the present invention, the laser wavelength used to clean the periphery of the sequentially stacked functional layer and the second electrode layer to expose the first electrode layer to obtain the P4 region is 532 nm.

[0022] In some embodiments of the present invention, the width of the P4 region is 0.5 cm to 1.5 cm.

[0023] In some embodiments of the present invention, in the step of measuring the resistance R1 of the first electrode layer of the second sub-cell, at least three test points are selected in the first electrode layer of the second sub-cell for measurement.

[0024] The beneficial effects that can be achieved by the present invention are:

[0025] A perovskite solar cell generally includes a first electrode layer, a functional layer, and a second electrode layer stacked in sequence. Performing P1 scribing, P2 scribing, and P3 scribing on the perovskite solar cell can obtain a series structure including at least two groups of sub-cells, wherein performing P2 scribing on the functional layer forms a P2 etched line, and the P2 etched line can penetrate the functional layer and serve as a conduction channel to connect two adjacent sub-cells. When a second electrode layer is prepared on the surface of the functional layer, the material for preparing the second electrode layer will be deposited into the P2 etched line, so that the first electrode layer of the previous sub-cell and the second electrode layer of the next sub-cell both form ohmic contact. Therefore, whether the P2 scribing is failed can be determined by measuring the resistance between the first electrode layer of any sub-cell and the second electrode layer of another adjacent sub-cell. For example, a first test point is determined on the surface of the second electrode layer of the first sub-battery, and a second test point is determined on the surface of the first electrode layer of the second sub-battery adjacent thereto, and the resistance R between the two test points is measured. At the same time, the resistance R1 of the first electrode layer of the second sub-battery is measured. When 0≤R-R1≤1Ω, it is determined that the P2 line is valid, and when R-R1>1Ω, it is determined that the P2 line is invalid.

[0026] The detection method of the present invention can realize fast real-time detection, shorten the detection time, improve the detection efficiency, and can also find and solve problems in time, reducing the waste of production and manufacturing costs. The improvement of detection efficiency can achieve the purpose of batch detection of all components. In addition, the detection method of the present invention also reduces the investment in high-end detection equipment and reduces the investment in equipment costs. The detection method is simple, does not require high technical expertise of detection personnel, and has high universality. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on the structures shown in these drawings without paying creative work.

[0028] Figure 1 Schematic diagram of the structure of a perovskite solar cell module according to an embodiment of the present invention.

[0029] Figure 2 This is a schematic structural diagram of a perovskite solar cell assembly according to another embodiment of the present invention.

[0030] Figure 3 Schematic diagram of point selection for measuring the resistance R1 of the first electrode layer of the second sub-battery in Embodiments 1 to 3 of the present invention.

[0031] The realization of the purpose, functional features and advantages of the present invention will be further explained in conjunction with embodiments and with reference to the accompanying drawings.

[0032] Description of Figure Numbers:

[0033] 100, perovskite solar cell; 110, first sub-cell; 120, second sub-cell; 101, first test point; 102, second test point; P1, P1 line; P2, P2 line; P3, P3 line; P4, invalid area; 10, substrate; 20, first electrode layer; 30, functional layer; 31, first transmission layer; 32, perovskite active layer; 33, second transmission layer; 40, second electrode layer. DETAILED DESCRIPTION

[0034] It should be understood that the specific embodiments described herein are only used to explain the present invention, and are not used to limit the present invention.

[0035] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0036] In the present invention, descriptions such as "first", "second", etc. are only used for descriptive purposes and cannot be understood as indicating or implying their relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include at least one of the features. In addition, the technical solutions between the various embodiments can be combined with each other, but they must be based on the ability of ordinary technicians in the field to implement them. When the combination of technical solutions is contradictory or cannot be implemented, it should be deemed that such a combination of technical solutions does not exist and is not within the scope of protection required by the present invention.

[0037] The present invention provides a detection method for judging the failure of P2 scribing of a perovskite solar cell. The perovskite solar cell to be detected comprises a first electrode layer, a functional layer, and a second electrode layer stacked in sequence. The first electrode layer has a P1 etching line, the functional layer has a P2 etching line staggered from the P1 etching line, and the second electrode layer has a P3 etching line on a side of the P2 etching line away from the P1 etching line, so that the perovskite solar cell forms a series structure including at least two groups of sub-cells.

[0038] The P1 etching line is obtained by P1 scribing. P1 scribing refers to etching the first electrode layer to form two or more independent parts. The line groove formed between any two adjacent parts is the P1 etching line, which lays the foundation for the perovskite solar cell to form a series structure.

[0039] In some embodiments, the first electrode layer is etched by laser to form the P1 etched line.

[0040] In some embodiments, the laser wavelength used to form the P1 etched line by laser etching is 1064 nm, which has a relatively long wavelength and is easily absorbed by the underlying electrode layer, thereby achieving a better etching effect and improving the efficiency of the P3 scribing line.

[0041] In some embodiments, after the first electrode layer is completed, the first electrode layer may be etched to form two or more independent parts.

[0042] In other embodiments, reference Figure 1 After completing the preparation of the first electrode layer 20 and part of the functional layer 30, the first electrode layer 20 and part of the film layer in the functional layer 30 close to the first electrode layer 20 can be etched to form two or more independent parts. For example, the first electrode layer 20 and the transport layer in the functional layer 30 close to the first electrode layer 20 are etched, and the transport layer includes an electron transport layer or a hole transport layer.

[0043] In some embodiments, the material for preparing the first electrode layer 20 includes at least one of ITO, Cu, Ag, and Au. In the present invention, the first electrode layer 20 can be prepared by conventional technical means in the art.

[0044] In some embodiments, reference Figure 1 The P2 etching line is obtained by P2 scribing. The P2 scribing line refers to etching the functional layer 30 to form a P2 etching line after the functional layer 30 is prepared, exposing the first electrode layer 20, so that the positive and negative electrodes between the sub-batteries can be connected to each other in the subsequent preparation of the second electrode layer 40 to form a series structure.

[0045] In some embodiments, the functional layer 30 is etched by laser to form the P2 etched line.

[0046] In some embodiments, the laser wavelength used to form the P2 etching line by laser etching is 532nm, which has a short wavelength and is easily absorbed by the film layer in the functional layer 30, such as the perovskite active layer 32, thereby achieving a better etching effect and improving the efficiency of the P2 scribing.

[0047] In some embodiments, the functional layer 30 includes a first transport layer 31, a perovskite active layer 32, and a second transport layer 33 stacked in sequence, wherein when the first transport layer 31 is an electron transport layer, the second transport layer 33 is a hole transport layer, and when the first transport layer 31 is a hole transport layer, the second transport layer 33 is an electron transport layer.

[0048] In some embodiments, an interface modification layer commonly used in the art, such as a passivation layer, may be disposed between the first transmission layer 31 and the perovskite active layer 32 , and between the perovskite active layer and the second transmission layer 33 .

[0049] In the present invention, the method for preparing the functional layer 30 can refer to conventional technical means in the art. For example, each film layer in the functional layer 30 is prepared by a deposition method.

[0050] The P3 etching line is obtained by P3 scribing, and the P3 scribing refers to etching the second electrode layer 40 to form the P3 etching line, insulating and separating adjacent sub-cells, so that the perovskite solar cell 100 forms a series structure.

[0051] In some embodiments, the second electrode layer 40 is etched by laser to form P3 etched lines.

[0052] In some embodiments, laser etching is performed to form P3 etching lines. The laser wavelength is 532 nm, which is relatively short and can be easily absorbed by the film layer in the etching layer, such as the perovskite active layer 32, thereby achieving a better etching effect and improving the efficiency of P3 scribing.

[0053] In some embodiments, only the second electrode layer 40 may be etched to form the P3 etched line.

[0054] In other embodiments, reference Figure 1 The P3 etching line also extends from the second electrode layer 40 to the functional layer 30 perpendicularly to the direction of the first electrode layer 20. By way of example, the second electrode layer 40 and the functional layer 30 are etched by laser to form the P3 etching line. All film layers in the functional layer 30 may be etched to expose the first electrode layer 20. Only part of the film layers in the functional layer 30 may also be etched, for example, only the second transmission layer 33 may be etched, or only the second transmission layer 33 and the perovskite active layer 32 may be etched.

[0055] In some embodiments, the material used to prepare the second electrode layer 40 includes at least one of ITO, Cu, Ag, and Au.

[0056] In the present invention, the method for preparing the second electrode layer 40 may refer to conventional technical means in the art. Exemplarily, the second electrode layer 40 is prepared by a deposition method.

[0057] The present invention now provides an embodiment of a detection method for determining whether a scribe line of a perovskite solar cell 100P2 is invalid. The detection method at least comprises the following steps:

[0058] S10, selecting any two adjacent groups of sub-cells in the perovskite solar cell 100, respectively defining them as a first sub-cell 110 and a second sub-cell 120, determining a first test point 101 on the surface of the second electrode layer 40 in the first sub-cell 110, and determining a second test point 102 on the surface of the first electrode layer 20 in the second sub-cell 120;

[0059] S20, measuring the resistance R between the first test point 101 and the second test point 102, and measuring the resistance R1 of the first electrode layer 20 of the second sub-battery 120, when 0≤R-R1≤1Ω, it is determined that the P2 marking is valid, and when R-R1>1Ω, it is determined that the P2 marking is invalid.

[0060] The principle of the detection method of the present invention is explained as follows: Figure 1 and Figure 2 , Figure 1 The diagram shows a schematic diagram of a structure in which two groups of sub-batteries are connected in series. Figure 2 The diagram shows a schematic diagram of a four-group series structure of sub-batteries. Figure 2The three groups of arrows in the figure indicate that the second electrode layer 40 of the previous group of sub-cells is connected to the first electrode layer 20 of the next group of sub-cells adjacent thereto to form a series structure. In the present invention, the P2 etching line formed by the P2 scribing runs through the functional layer 30 of the perovskite solar cell 100 and serves as a conduction channel to connect the first sub-cell 110 and the second sub-cell 120. When the second electrode layer 40 is prepared on the surface of the functional layer 30, the material for preparing the second electrode layer 40 will be deposited into the P2 etching line, so that the second electrode layer 40 in the first sub-cell 110 and the first electrode layer 20 of the second sub-cell 120 can form an ohmic contact. Therefore, if the P2 scribing effect is poor, it will be difficult to connect the first sub-cell 110 and the second sub-cell 120. If a better ohmic contact is formed between the battery 120, the resistance between the second electrode layer 40 in the first sub-cell 110 and the first electrode layer 20 in the second sub-cell 120 will be larger, and the P2 line will easily fail. If the P2 line effect is better, a better ohmic contact will be formed between the second electrode layer 40 in the first sub-cell 110 and the first electrode layer 20 in the second sub-cell 120, the resistance between the second electrode layer 40 in the first sub-cell 110 and the first electrode layer 20 in the second sub-cell 120 will be smaller, and the efficiency of the P2 line will be improved. Therefore, whether the P2 marking is invalid can be determined by measuring the resistance R between the second electrode layer 40 in the first sub-battery 110 and the first electrode layer 20 in the second sub-battery 120. The smaller the resistance R, the better the effect of the P2 marking, especially when the resistance R is closer to the resistance R1 of the first electrode layer 20 of the second sub-battery 120, the better the effect of the P2 marking, that is, when 0≤R-R1≤1Ω, it can be determined that the P2 marking is effective, and when R-R1>1Ω, it can be determined that the P2 marking is invalid.

[0061] In some embodiments, a multimeter is used to measure the resistance R. Two probes of the multimeter are connected to the first test point 101 and the second test point 102 respectively to measure the resistance R between the first test point 101 and the second test point 102. The testing method of this embodiment is simple and convenient.

[0062] In some embodiments, a laser is used to clean the four sides of the sequentially stacked functional layer 30 and the second electrode layer 40 to obtain a P4 region, exposing the first electrode layer 20 to obtain a P4 region. In this embodiment, a second test point 102 can be determined in the P4 region, which can reduce the detection error of the resistance R caused by impurities on the surface of the first electrode layer 20, and is beneficial to improving the accuracy of the test.

[0063] In some embodiments, reference Figure 2, laser is used to clean the functional layer 30 and the periphery of the second electrode layer 40 to expose the first electrode layer 20 to obtain the P4 region, and the second test point 102 is determined in the P4 region. In this embodiment, the first electrode layer 20 is cleaned to reduce the detection error of the resistance R caused by impurities on the surface of the first electrode layer 20.

[0064] In some embodiments, the laser wavelength of the P4 region obtained by cleaning the invalid area of ​​the first electrode layer 20 is 532 nm. The wavelength is shorter and is easily absorbed by the functional layer 30, thereby achieving a better cleaning effect, reducing the detection error of the resistance R caused by impurities on the surface of the first electrode layer 20, and is beneficial to improving the accuracy of the test.

[0065] In some embodiments, the width of the P4 region is 0.5 cm to 1.5 cm, which is conducive to meeting the requirement of providing the second test point 102 and reducing measurement errors.

[0066] In some embodiments, two test points can be selected in the first electrode layer 20 of the second sub-battery 120 to test the resistance R1. In other embodiments, at least three test points can be selected in the first electrode layer 20 of the second sub-battery 120 to perform multiple measurements to improve the accuracy of R1.

[0067] In some embodiments, after the perovskite solar cell 100 forms the P1 etching line and the P2 etching line and completes the preparation of the second electrode layer 40, before forming the P3 etching line, it is possible to detect whether the P2 line is failed, thereby achieving the purpose of timely discovering and solving problems in a timely manner, saving resources.

[0068] In some embodiments, reference Figure 2 , detecting the P2 scribe line during the preparation of the perovskite solar cell 100 includes the following steps:

[0069] Preparation of perovskite solar cells 100

[0070] S1: a layer of transparent conductive oxide is deposited on the surface of the glass substrate 10 by magnetron sputtering to form a first electrode layer 20 .

[0071] S2: Setting the laser wavelength to 1064 nm, performing P1 scribing on the FTO first electrode layer 20 by laser, etching the P1 etched line, and dividing the first electrode layer 20 into multiple independent parts;

[0072] S3: Prepare the functional layer 30 by solution coating on the surface of the first electrode layer 20 having the etching line P1 in step S2, Figure 1 The functional layer 30 includes a first transmission layer 31 , a perovskite active layer 32 and a second transmission layer 33 stacked in sequence.

[0073] S4: setting the laser wavelength to 532 nm and the etching power to 30 W, performing P2 scribing on the functional layer 30 by laser to obtain P2 etched lines with a width of 45 μm to 55 μm.

[0074] S5: A transparent conductive oxide is deposited on the surface of the functional layer 30 in S4 by magnetron sputtering to obtain a second electrode layer 40 .

[0075] S6: Setting the laser wavelength to 532 nm, using laser to perform P3 scribing on the second electrode layer 40 to form P3 etching lines, thereby obtaining a perovskite solar cell 100 component having a plurality of sub-cells.

[0076] S7: Use a laser with a wavelength of 532 to perform edge cleaning on the invalid area around the perovskite solar cell 100 component, with a cleaning width of 1 cm to 1.5 cm, and retain the first electrode layer 20 perpendicular to the edges of P1, P2, and P3, and form a P4 area in the invalid area of ​​the first electrode layer 20.

[0077] Steps to determine whether P2 marking is invalid:

[0078] S10, selecting any two adjacent groups of sub-cells in the perovskite solar cell 100, respectively defining them as a first sub-cell 110 and a second sub-cell 120, determining a first test point 101 on the surface of the second electrode layer 40 in the first sub-cell 110, and determining a second test point 102 on the surface of the first electrode layer 20 in the second sub-cell 120;

[0079] S20, placing two probes of the multimeter on the test points 101 and 102 respectively, measuring the resistance R between 101 and 102, and at the same time measuring the resistance R1 of the first electrode layer 20 of the second sub-battery 120, when 0≤R-R1≤1Ω, it is judged that the P2 marking is valid, and when R-R1>1Ω, it is judged that the P2 marking is invalid.

[0080] The technical solution of the present invention is further described in detail below in conjunction with specific embodiments. It should be understood that the following specific embodiments are only used to explain the present invention, and are not used to limit the present invention.

[0081] Example 1

[0082] Preparation of perovskite solar cells 100

[0083] S1: depositing a layer of FTO material on the surface of the glass substrate 10 by magnetron sputtering to form a first electrode layer 20 .

[0084] S2: setting the laser wavelength to 1064 nm, performing P1 scribing on the first electrode layer 20 by laser, etching to form P1 etched lines, so that the first electrode layer 20 is divided into a plurality of independent parts;

[0085] S3: The electron transport layer is prepared by coating the surface of the first electrode layer 20 having the P1 etching line etched in step S3 with an electron transport layer precursor solution by a solution coating method, and then a perovskite active layer 32 and a hole transport layer are prepared on the surface of the electron transport layer in turn by a solution coating method to form a functional layer 30 consisting of the electron transport layer, the perovskite active layer 32 and the hole transport layer.

[0086] S4: setting the laser wavelength to 532 nm and the etching power to 30 W, performing P2 scribing on the functional layer 30 by laser to obtain a P2 etched line with a width of 50 μm, exposing the first electrode layer 20 .

[0087] S5: The second electrode layer 40 is obtained by evaporating Ag on the surface of the hole transport layer in step S4 by magnetron sputtering.

[0088] S6: Setting the laser wavelength to 532 nm, using the laser to perform P3 scribing on the second electrode layer 40, forming a P3 etching line on the second electrode layer 40, and completing the P3 scribing to obtain a perovskite solar cell 100 component having multiple sub-cells.

[0089] S7: Use a laser with a wavelength of 532 to perform edge cleaning on the ineffective area around the perovskite solar cell 100 component. The edge cleaning width is about 1 cm, and the first electrode layer 20 perpendicular to the edges of P1, P2, and P3 is retained to form a P4 area.

[0090] Steps to determine whether P2 marking is invalid:

[0091] S10. Select any two adjacent groups of sub-cells in the perovskite solar cell 100, respectively defined as a first sub-cell 110 and a second sub-cell 120, determine a first test point 101 on the surface of the second electrode layer 40 in the first sub-cell 110, and determine a second test point 102 in the P4 region of the first electrode layer 20 in the second sub-cell 120.

[0092] S20, placing two probes of a multimeter on the test points 101 and 102 respectively, testing the resistance R between 101 and 102, and testing the test positions between 8 different adjacent sub-batteries one by one, and recording the resistance R in Table 1;

[0093] At the same time, the resistance R1 of the first electrode layer 20 of the second sub-cell 120 is measured, referring to Figure 3, R1 is measured as follows: the first electrode layer 20 of the second sub-battery 120 corresponding to 8 locations is detected respectively, three test points 1, 2, and 3 are selected on the first electrode layer 20 of the second sub-battery 120 at each location, and the resistance R1 from the 1st point to the 2nd point is measured 8 times in total at the 8 locations, and the resistance R1 from the 1st point to the 2nd point is measured 8 times in total at the 8 locations, and the measured data is recorded in Table 1.

[0094] When 0≤R-R1≤1Ω, it is determined that the P2 marking is valid, and when R-R1>1Ω, it is determined that the P2 marking is invalid.

[0095] Example 2

[0096] Example 2 The perovskite solar cell 100 module is prepared in the same manner as Example 1, but the difference is that in Example 2, when preparing the perovskite solar cell 100 module, the laser etching power of step S4 is 27 W. Whether the P2 scribe line fails is determined in the same manner as Example 1, and the measured resistances R and R1 are recorded in Table 2.

[0097] Example 3

[0098] Example 3 The perovskite solar cell 100 module is prepared in the same manner as Example 1, but the difference is that in Example 3, when preparing the perovskite solar cell 100 module, the laser etching power of step S4 is 33 W. Whether the P2 scribe line fails is determined in the same manner as Example 1, and the measured resistances R and R1 are recorded in Table 3.

[0099] Table 1 P2 line resistance measurement data of Example 1

[0100]

[0101]

[0102] Table 2 P2 line resistance measurement data of Example 2

[0103]

[0104] Table 3 P2 line resistance measurement data of Example 3

[0105]

[0106]

[0107] It can be seen from Table 1 that in Example 1, the functional layer is etched with a 30W laser to prepare the P2 line, and the measured resistance between 101 and 102 is relatively small, between 9.8Ω and 10.8Ω, and the difference with R1 is not greater than 1, which can be judged as the P2 line is effective. However, when the functional layer is etched with a 27W laser and a 33W laser to prepare the P2 line, the measured resistance between 101 and 102 is relatively large, between 14.5Ω and 15.6Ω and 15.9Ω and 16.8Ω, respectively, and the difference with R1 is greater than 1, which can be judged as the P2 line failure. The measurement method of the present invention can determine that the preparation of the P2 line by etching with a 30W laser can strengthen the ohmic contact of the P2 line to the second electrode layer and the first electrode layer.

[0108] It can be seen that the detection method of the present invention can realize rapid real-time detection, shorten the detection time, improve the detection efficiency, and can also find and solve problems in time, reducing the waste of production and manufacturing costs. The improvement of detection efficiency can achieve the purpose of full batch detection of components. In addition, the detection method of the present invention also reduces the investment in high-end detection equipment and reduces the investment in equipment costs. The detection method is simple, does not require high technical expertise of detection personnel, and has high universality.

[0109] The above are only preferred embodiments of the present invention, and are not intended to limit the patent scope of the present invention. Any equivalent structure or equivalent process transformation made using the contents of the present invention specification and drawings, or directly or indirectly applied in other related technical fields, are also included in the patent protection scope of the present invention.

Claims

1. A method for determining the failure of P2 scribing of a perovskite solar cell, characterized in that: The perovskite solar cell comprises a first electrode layer, a functional layer, and a second electrode layer stacked in sequence, wherein the first electrode layer has a P1 etching line, the functional layer has a P2 etching line staggered from the P1 etching line, and the second electrode layer has a P3 etching line on a side of the P2 etching line away from the P1 etching line, so that the perovskite solar cell forms a series structure including at least two groups of sub-cells; The detection method for determining whether the scribing of the perovskite solar cell P2 is failed comprises at least the following steps: Select any two adjacent groups of sub-cells in the perovskite solar cell, respectively define them as a first sub-cell and a second sub-cell, determine a first test point on the surface of the second electrode layer in the first sub-cell, and determine a second test point on the surface of the first electrode layer in the second sub-cell; The resistance R between the first test point and the second test point is measured, and the resistance R1 of the first electrode layer of the second sub-battery is measured. When 0≤R-R1≤1Ω, the P2 marking is judged to be valid, and when R-R1>1Ω, the P2 marking is judged to be invalid.

2. The method for detecting the failure of the scribing of the perovskite solar cell P2 according to claim 1, characterized in that: Connect two probes of a multimeter to the first test point and the second test point respectively, and measure the resistance R between the first test point and the second test point.

3. The method for detecting the failure of the scribing of the perovskite solar cell P2 according to claim 1, characterized in that: Etching the first electrode layer by laser to form the P1 etching line; and / or, etching the functional layer using a laser to form the P2 etching line; and / or, etching the second electrode layer by laser to form the P3 etching line; And / or, the material for preparing the second electrode layer includes at least one of ITO, Cu, Ag, and Au; And / or, the functional layer includes a first transport layer, a perovskite active layer and a second transport layer stacked in sequence.

4. The method for detecting the failure of the scribing of the perovskite solar cell P2 according to claim 1, characterized in that: The P3 etching line also extends from the second electrode layer to the functional layer in a direction perpendicular to the first electrode layer.

5. The method for detecting the failure of the scribing of a perovskite solar cell P2 according to claim 1, characterized in that: The laser wavelength for forming the P1 etching line by laser etching is 1064nm; And / or, the laser wavelength of the P2 etching line formed by laser etching is 532nm; And / or, the laser wavelength of the P3 etching line formed by laser etching is 532 nm.

6. The method for detecting the failure of the scribing of a perovskite solar cell P2 according to claim 1, characterized in that: The functional layer and the second electrode layer stacked in sequence are cleaned around by laser to expose the first electrode layer to obtain the P4 region.

7. The method for detecting the failure of the scribing of the perovskite solar cell P2 according to claim 6, characterized in that: The second test point is determined in the P4 area.

8. The method for detecting the failure of the scribing of a perovskite solar cell P2 according to claim 1, characterized in that: The laser wavelength of the laser used to clean the periphery of the sequentially stacked functional layer and the second electrode layer to expose the first electrode layer to obtain the P4 region is 532 nm.

9. The method for detecting the failure of the scribing of the perovskite solar cell P2 according to claim 8, characterized in that: The width of the P4 region is 0.5 cm to 1.5 cm.

10. The method for detecting the failure of the scribing of the perovskite solar cell P2 according to claim 1, characterized in that: In the step of measuring the resistance R1 of the first electrode layer of the second sub-cell, at least three test points are selected in the first electrode layer of the second sub-cell for measurement.

Images