Solid state cooling device

Abstract

The invention relates to a solid state cooling system, in particular a thermoelectric refrigeration device for cooling an object. The invention can be used for developing electronic component coolers, various types of refrigerators and the like, and can be efficiently used in earth conditions and space environments. The technical result of the invention is an increase in the capacity and efficiency of a solid-state cooling device. The solid state cooling device comprises a preprocessing module which is composed of a semiconductor element, one side surface of the preprocessing module is provided with a substrate, the outer surface of the substrate is provided with a first connecting terminal used for being connected with a circuit, and the other surface of the semiconductor element is provided with a second connecting terminal used for being connected with the circuit. The semiconductor element can reduce the energy of electrons in the current entering the second connection terminal from the power supply through the wire, and the first connection terminal is connected to the second connection terminal of the cooling module through the wire; the cooling module is composed of at least one semiconductor element located on the substrate, the first connecting terminal and the second connecting terminal are located on the outer surface of the substrate and the outer surface of the semiconductor element respectively, one of the outer surfaces directly makes contact with an object needing to be cooled, and the first connecting terminal is connected to the second connecting terminal of the heat dissipation module through a wire; the heat dissipation module is a certain distance away from the cooling module and is composed of at least one semiconductor element, one side surface of the heat dissipation module is provided with a substrate, the outer surface of the substrate is provided with a first connecting terminal used for being connected with a circuit, and the other surface of the semiconductor element is provided with a second connecting terminal used for being connected with the circuit; the second connection terminal is connected to a first connection terminal of the cooling module through a wire, and the first connection terminal is connected to a power supply through a wire.

Description

Technical Field

[0001] The present invention relates to solid-state cooling systems, in particular to thermoelectric refrigeration devices for cooling objects. The present invention can be used to develop electronic component coolers, refrigerators of various types, etc., and can be used efficiently in earth conditions and space environments. Background Art

[0002] Thermoelectric coolers based on the Peltier effect used in the prior art are absolutely safe from an ecological point of view, have no wear and friction elements, and therefore operate without noise and vibration, do not require conventional purification of the working medium, and are able to work stably for a long time. Thermoelectric energy converters have other advantages over conventional cooling devices: they can not only cool, but also heat; the elements that generate cold have extremely high reliability; they can be cooled very quickly; the temperature can be precisely adjusted and thermostatically controlled by changing the supply current; the parameters of the thermoelectric module are not affected by gravity and spatial orientation, and are less sensitive to high mechanical loads; and they do not require maintenance. All these advantages of thermoelectric coolers sometimes leave developers with no choice when designing cooling systems for various fields of application: optoelectronic systems, computers, medicine, household appliances, transportation and other fields.

[0003] For example, a thermoelectric cooling device is known, which includes a thermoelectric battery, whose cold end is connected to an object requiring constant temperature control through a cold accumulator (RU232951C2). When the thermoelectric battery is working, the heat generated by the hot end is dissipated to the surrounding environment through a radiator under the action of fan airflow.

[0004] U.S. Patent US 6116040 discloses a device for cooling electronic components associated with a refrigeration compressor. The temperature of high-power electronic equipment is maintained within a desired temperature range by compressor drive. Patent US 5569650 relates to an integrated circuit cooling device, more specifically, a device that provides active cooling to reduce temperature fluctuations of the integrated circuit. In one embodiment of the invention, the integrated circuit is attached to a substrate and a thermoelectric cooling device (TEC) is attached to an exposed surface of the integrated circuit. In addition, a heat sink is provided, which is attached to the hot side of the TEC device. The output terminals of the thermocouple are connected to a feedback control circuit.

[0005] However, all existing cooling devices have low capacity per unit area, low efficiency, and require heat dissipation from the hot side of the cooling device. These cooling devices usually require additional systems to remove and dissipate the absorbed heat, and the size of these systems is often larger than the object being cooled. At the same time, the heat absorption area is closely adjacent to the heat release area, which has a negative impact on the performance of the cooling device.

[0006] The present application aims to solve all these problems. Summary of the invention

[0007] The task of the present invention is to develop a solid state cooling unit (hereinafter referred to as "FCU") with improved capacity and efficiency. In addition, the designed solid state cooling unit should have a compact size and be able to discharge and dissipate heat outside the cooled device.

[0008] The technical result of the present invention is to improve the production capacity and efficiency of FCU.

[0009] The above technical achievements are achieved by an FCU, which includes:

[0010] A pre-processing module is composed of a semiconductor element, a substrate is provided on one surface of the pre-processing module, a first connection terminal for connecting to the circuit is provided on the outer surface of the substrate, and a second connection terminal for connecting to the circuit is provided on the other surface of the semiconductor element, the semiconductor element can reduce the energy of electrons in the current entering the second connection terminal from the power supply through the wire, and the first connection terminal is connected to the second connection terminal of the cooling module through the wire,

[0011] A cooling module, comprising at least one semiconductor element located on a substrate, wherein the first and second connection terminals are located on outer surfaces of the substrate and the semiconductor element, respectively, wherein one of the outer surfaces is in direct contact with an object to be cooled, and the first connection terminal is connected to the second connection terminal of the heat dissipation module through a wire,

[0012] The heat dissipation module is a certain distance away from the cooling module and is composed of at least one semiconductor element. A substrate is provided on one surface of the heat dissipation module, and a first connection terminal for connecting to the circuit is provided on the outer surface of the substrate. A second connection terminal for connecting to the circuit is provided on the other surface of the semiconductor element. The second connection terminal is connected to the first connection terminal of the cooling module through a wire, and the first connection terminal is connected to the power supply through a wire.

[0013] In the case where the heat dissipation module uses multiple semiconductor elements and the cooling module uses multiple semiconductor elements, the first connecting terminal of the first semiconductor element of the cooling module is connected to the second connecting terminal of the first semiconductor element of the heat dissipation module through a wire, and its first connecting terminal is connected to the second connecting terminal of the next semiconductor element of the cooling module through a wire, and the first connecting terminal of the element is connected to the second connecting terminal of the first semiconductor element of the heat dissipation module or to the power module through a wire.

[0014] The semiconductor elements of the cooling module can be: n-type conductive semiconductor; variable conductivity semiconductor from p-type to n-type; variable bandgap structure semiconductor, whose structure changes from a larger work function semiconductor to a smaller work function semiconductor, and has p-type conductivity; variable bandgap structure semiconductor, whose structure changes from a larger work function semiconductor to a smaller work function semiconductor, and is a pn structure with gradual doping from p-type to n-type along the current direction.

[0015] The semiconductor elements of the heat dissipation module or the pre-processing module can be: a p-type conductive semiconductor; two semiconductors, one is an n-type conductive semiconductor and the other is a p-type conductive semiconductor; a variable conductivity semiconductor: from n-type conductivity to p-type conductivity; a variable bandgap structure semiconductor, whose structure changes from a smaller work function semiconductor to a larger work function semiconductor, and has n-type conductivity; a variable bandgap structure semiconductor, whose structure changes from a smaller work function semiconductor to a larger work function semiconductor, and can be a pn structure with gradual doping from n-type to p-type along the current direction.

[0016] In order to dissipate heat from the heat dissipation module or the pre-processing module, a heat sink can additionally be used.

[0017] A semiconductor element that converts electronic energy into quanta is installed and electrically connected in front of the heat dissipation module.

[0018] A semiconductor element that converts electron energy into quanta can be installed and electrically connected before the pre-processing module.

[0019] The claimed technical result is achieved by the structural features of the designed device, in particular by the spatial separation of the semiconductor components responsible for cooling of the FCU from the semiconductor components responsible for heat dissipation of the FCU. The semiconductor components responsible for cooling are located directly on the equipment component to be cooled, or separately in a heat exchanger, or as part of a battery pack. The semiconductor components responsible for heat dissipation are located outside the cooled equipment, for example, in a position that is convenient for heat dissipation. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] The objects, features and advantages of the present invention will become more apparent after reviewing the following description and the accompanying drawings, which show:

[0021] Figure 1 .FCU circuit diagram.

[0022] Figure 2.Implementation scheme of the heat dissipation module or pre-treatment module: a) the components of the module are made of p-type semiconductor; b) the components of the module are made of two semiconductors, the first one is an n-type conductive semiconductor and the other one is a p-type conductive semiconductor along the direction of electron movement; c) the components of the module are made of variable conductivity semiconductor (from n-type to p-type conductivity along the direction of electron movement); d) the components of the module are made of variable bandgap structure semiconductor, which changes from a semiconductor with a smaller work function to a semiconductor with a larger work function, and has n-type conductivity; e) the components of the module are made of variable bandgap structure semiconductor, which changes from a semiconductor with a smaller work function to a semiconductor with a larger work function along the direction of electron movement, and has p-type conductivity; f) the components of the module are made of variable bandgap structure semiconductor, which changes from a semiconductor with a smaller work function to a semiconductor with a larger work function along the direction of electron movement, and is a gradually doped structure from n-type to p-type along the direction of electron movement.

[0023] Figure 3 .Implementation plan of the cooling module: a) the components of the module are made of n-type semiconductors; b) the components of the module are made of two semiconductors, the first of which is a p-type conductive semiconductor and the other is an n-type conductive semiconductor along the direction of electron movement; c) the components of the module are made of variable bandgap structure semiconductors, which change from a semiconductor with a larger work function to a semiconductor with a smaller work function along the direction of electron movement, and have p-type conductivity; d) the components of the module are made of variable bandgap structure semiconductors, which change from a semiconductor with a larger work function to a semiconductor with a smaller work function along the direction of electron movement, and have n-type conductivity; e) the components of the module are made of variable bandgap structure semiconductors, which change from a semiconductor with a larger work function to a semiconductor with a smaller work function along the direction of electron movement, and have a gradual doping structure from p-type to n-type along the direction of electron movement.

[0024] 1--Power module; 2--Pretreatment module; 3--Cooling module; 4--Heat dissipation module; 5--Control module; 6--Semiconductor element for converting electronic energy into quantum; 7--Conductor connecting the heat dissipation module or pretreatment module with the cooling module; 8--Conductor connecting the cooling module with the heat dissipation module; 1.1--Ohmic contact; 1.2--P-type conductive semiconductor; 1.3--N-type conductive semiconductor; 1.4--Variable conductivity semiconductor (from n-type to p-type conductivity along the direction of electron movement); 1.5--Variable bandgap structure semiconductor, changing from a semiconductor with a smaller work function to a semiconductor with a larger work function, with n-type conductivity; 1.6--Variable bandgap structure, changing from a semiconductor with a smaller work function to a semiconductor with a larger work function along the direction of electron movement, with p-type conductivity; 1.7--Variable bandgap structure semiconductor, The change from a semiconductor with a smaller work function to a semiconductor with a larger work function along the direction of electron movement is a gradual doping structure from n-type to p-type along the direction of electron movement; 1.8--variable bandgap structure semiconductor, which changes from a semiconductor with a larger work function to a semiconductor with a smaller work function along the direction of electron movement, and has p-type conductivity; 1.9--variable bandgap structure semiconductor, which changes from a semiconductor with a larger work function to a semiconductor with a smaller work function along the direction of electron movement, and has n-type conductivity; 1.10--substrate; 1.11--variable bandgap structure semiconductor, which changes from a semiconductor with a larger work function to a semiconductor with a smaller work function along the direction of electron movement, and is a gradual doping structure from p-type to n-type along the direction of electron movement; I--semiconductor element of the pre-treatment module; II--semiconductor element of the heat dissipation module; III--semiconductor element of the cooling module. DETAILED DESCRIPTION

[0025] The present invention provides an FCU, in which a cooling component directly in contact with a cooling object and a heat dissipation component are spatially separated from each other.

[0026] In this application, FCU refers to a device that converts electrical energy into thermal energy based on the Peltier effect and the Thomson effect. In scientific and patent literature, the terminology is not uniform. This device is also called a "thermoelectric cooling device", "Peltier module", or "Peltier plate".

[0027] Figure 1 The schematic depicts the circuit connections of the FCU. The device consists of eight main elements:

[0028] 1. Power module 1

[0029] Power module 1 (can be combined with the standard power module of the device being cooled). Its function is to provide a constant voltage to the device.

[0030] 2. Preprocessing module 2

[0031] The pre-processing module 2 is electrically connected to the power module 1. Regardless of its implementation, the pre-processing module 2 reduces the energy of electrons through a carrier recombination process. The pre-processing module 2 dissipates heat to the surrounding environment outside the cooled object or at a convenient place, which can be done directly or with the help of additional devices that enhance heat transfer (such as a heat sink) and radiation (such as a semiconductor device that converts electronic energy into quantum).

[0032] The pre-processing module 2 is composed of a semiconductor element I, including at least one semiconductor 1.2-1.6, grown on a substrate 1.10. Contact points 1.1 are provided on opposite sides of the semiconductor element I, including ohmic contacts, which can be connected to the circuit by wires. The contact points 1.1 are equipped with leads or pressure contacts and are covered with a heat-conducting electrical insulating layer, such as silicon dioxide or a polymer, for example: polyethylene, polypropylene, polycarbonate.

[0033] In some embodiments of the present invention, the semiconductor 1.2 in the semiconductor element 1 of the preprocessing module 2 has p-type (hole) conductivity. In some embodiments, the semiconductor element 1 of the preprocessing module 2 includes two semiconductors 1.2 and 1.3, one of which is an n-type conductive semiconductor and the other is a p-type conductive semiconductor along the direction of electron movement. In some embodiments, the semiconductor 1.4 in the semiconductor element 1 of the preprocessing module 2 is a variable conductivity semiconductor (from electron (n-type) conductivity to hole (p-type) conductivity along the direction of electron movement). In some embodiments, the semiconductor 1.5 in the semiconductor element 1 of the preprocessing module 2 is a variable bandgap structure, which changes from a semiconductor with a smaller work function to a semiconductor with a larger work function, and has p-type conductivity. In some embodiments, the semiconductor 1.6 in the semiconductor element 1 of the preprocessing module 2 is a variable bandgap structure, which changes from a semiconductor with a smaller work function to a semiconductor with a larger work function along the direction of electron movement, and is a gradually doped structure from n-type to p-type along the direction of electron movement.

[0034] The pre-processing module 2 may also be equipped with a heat sink, which is close to at least one side of the semiconductor element 1 to ensure effective heat transfer from the semiconductor element 1 to the heat sink and enhance heat dissipation. The area and shape of the pre-processing module 2 can vary within a wide range, depending on the technical task: when the device power is increased, the area of ​​the pre-processing module 2 is increased; if necessary, the module profile can be changed in a two-dimensional plane; if necessary, a semiconductor part with any curved surface can be manufactured.

[0035] 3. Cooling module 3

[0036] The cooling module 3 is in direct contact with the object to be cooled (computer processors, optoelectronic devices, various reactors that require constant temperature, etc.). Regardless of its implementation, the main task of the cooling module 3 is to cool the object by absorbing heat and converting thermal energy into electronic energy that constitutes an electric current. This is achieved by converting the thermal vibration of the semiconductor lattice into electronic energy to form electron-hole pairs.

[0037] The cooling module 3 is composed of a semiconductor element III, which includes a semiconductor grown on a substrate 1.10. The semiconductors used in the semiconductor element III are: an n-type conductive semiconductor 1.3; two semiconductors 1.2 and 1.3, the first one is a p-type conductive semiconductor and the other one is an n-type conductive semiconductor along the direction of electron movement; the semiconductor 1.8 is a variable bandgap structure, which changes from a semiconductor with a larger work function to a semiconductor with a smaller work function along the direction of electron movement, and has p-type conductivity; the semiconductor 1.9 is a variable bandgap structure, which changes from a semiconductor with a larger work function to a semiconductor with a smaller work function along the direction of electron movement, and has n-type conductivity; the semiconductor 1.11 is a variable bandgap structure, which changes from a semiconductor with a larger work function to a semiconductor with a smaller work function along the direction of electron movement, and is a gradually doped structure from p-type to n-type along the direction of electron movement.

[0038] A contact point 1.1 is provided on one side of the semiconductor element III of the cooling module 3 (the substrate can serve as the contact point. In the case of using silicon-germanium to manufacture semiconductor structures, these structures can be grown on a pre-treated metal substrate, and the intermediate layer is a silicide of the metal substrate. These structures can also form a solid solution), and an ohmic contact point 1.1 is provided on the other side of the semiconductor element. The entire module is covered with an electrically insulating layer capable of conducting heat, such as silicon dioxide or a polymer, for example: polyethylene, polypropylene, polycarbonate.

[0039] The top of the cooling module 3 (the side not in contact with the object to be cooled) may be covered with a layer of heat insulating material, such as foam glass.

[0040] The area and shape of the cooling module 3 can vary within a wide range, depending on the technical task: when the device power is increased, the area of ​​the cooling module 3 increases; if necessary, the module contour can be changed in a two-dimensional plane; if necessary, semiconductor parts with any curved surface can be manufactured.

[0041] 4. Heat dissipation module 4

[0042] The heat dissipation module 4 dissipates the heat obtained from the cooling module 3 to the surrounding environment.

[0043] The function of the heat dissipation module 4 is to convert the excess energy of the electrons constituting the current into heat energy (or photon energy) and dissipate it to the environment outside the cooled device.

[0044] Regardless of its implementation, the heat dissipation module 4 reduces the energy of electrons through a carrier recombination process and dissipates the released energy into the surrounding environment in the form of heat (through heat exchange and / or release of photons).

[0045] Structurally, the heat dissipation module 4 is similar to the pre-processing module 2 .

[0046] The heat dissipation module 4 is composed of a semiconductor element, including at least one semiconductor 1.2-1.6, grown on a substrate 1.10. Contact points 1.1 are provided on opposite sides of the element, which can be connected to the circuit by wires. The contact points 1.1 are equipped with leads or pressure contacts and covered with a heat-conducting electrical insulating layer, such as silicon dioxide or a polymer, for example: polyethylene, polypropylene, polycarbonate.

[0047] In some embodiments of the present invention, the semiconductor 1.2 in the semiconductor element II of the heat dissipation module 4 has p-type (hole) conductivity. In some embodiments, the semiconductor element II of the heat dissipation module 4 includes two semiconductors 1.2 and 1.3, one of which is an n-type conductive semiconductor and the other is a p-type conductive semiconductor along the direction of electron movement. In some embodiments, the semiconductor 1.4 in the semiconductor element II of the heat dissipation module 4 is a variable conductivity semiconductor (from electron (n-type) conductivity to hole (p-type) conductivity along the direction of electron movement). In some embodiments, the semiconductor 1.5 in the semiconductor element II of the heat dissipation module 4 is a variable bandgap structure, which changes from a semiconductor with a smaller work function to a semiconductor with a larger work function, and has p-type conductivity. In some embodiments, the semiconductor 1.6 in the semiconductor element II of the heat dissipation module 4 is a variable bandgap structure, which changes from a semiconductor with a smaller work function to a semiconductor with a larger work function along the direction of electron movement, and is a gradually doped structure from n-type to p-type along the direction of electron movement.

[0048] The heat dissipation module 4 may also be equipped with a heat sink, which is in close contact with at least one side of the semiconductor element to ensure effective heat transfer from the semiconductor element to the heat sink and enhance heat dissipation.

[0049] Heat dissipation is achieved through several physical processes: radiation and convection. The area and shape of the heat dissipation module 4 can vary within a wide range, depending on the technical task: when increasing the power of the device, the area of ​​the heat dissipation module 4 increases; if necessary, the module contour can be changed in a two-dimensional plane; if necessary, semiconductor parts with any curved surface can be manufactured.

[0050] 5. Control module 5

[0051] The FCU can be equipped with a control module 5 to adjust the cooling intensity. The control module 5 obtains power from the power module 1 and is electrically connected to the cooling module 3.

[0052] 6. Semiconductor components that convert electronic energy into quantum

[0053] The semiconductor element for converting electronic energy into quanta is a device that emits energy to the surroundings in the form of radiation (when the flow emission by heat transfer and convection is impossible or insufficient). When a plurality of semiconductor elements for converting electronic energy into quanta are used, they are connected in parallel. The number, power and structure of semiconductor elements for converting electronic energy into quanta can vary within a wide range, depending on the technical task. As semiconductor elements for converting electronic energy into quanta, known semiconductor devices for converting electronic energy into photons are used, including thermoluminescent diodes.

[0054] 7. Conductor 7

[0055] Conductor 7 connects pre-processing module 2 and cooling module 3, or heat dissipation module 4 and cooling module 3. The conductor material is selected so that it can conduct electron current with a specific energy and will not form a high potential barrier with the outlet contact point of the heat dissipation module and the inlet contact point of the cooling module. For example, a nickel conductor with a work function of 4.91-5.01 eV, an electron entering the conductor from the heat dissipation or pre-processing module and having an energy equal to or within the range of the nickel Fermi level electron energy ± kT (~ 0.025 eV), can be transmitted over a long distance through the conductor without significant thermalization. Conductor 7 can also use gold or platinum.

[0056] 8. Conductor 8

[0057] Conductor 8 connects cooling module 3 and heat dissipation module 4, as well as power module 1 and pre-processing module 2. The conductor material is selected so that it can conduct electron current with specific energy and will not form a high potential barrier with the outlet contact point of the cooling module and the inlet contact point of the heat dissipation module. For example, a magnesium conductor with a work function of 3.67 eV (aluminum with a work function of 4.2 eV, copper with a work function of 4.4 eV), an electron that enters the conductor from the cooling module and has an energy equal to or within the range of the electron energy of the magnesium Fermi level ± kT (~ 0.025 eV), can be transmitted over a long distance through the conductor without significant thermalization. Aluminum and copper can also be used for conductor 8.

[0058] Each semiconductor element III of the cooling module 3 is connected to a corresponding semiconductor element II of the heat dissipation module to form a pair, and there may be more than one such pair.

[0059] In the proposed technical solution, the electric current acts as a heat carrier, so the conductor material used to transmit the current in different parts of the FCU circuit is selected according to the average energy of the electrons in the current passing through the conductor.

[0060] In the proposed technical solution, for efficient heat dissipation in space conditions, semiconductor structures (LEDs, etc.) are used that convert electronic energy into light radiation.

[0061] In the proposed technical solution, in addition to the traditional thermoelectric material (bismuth telluride) for cooling, variable bandgap semiconductor structures can also be used, including structures with variable doping. For the cooling module, semiconductor materials such as In(x)GaAs or Ge(x)Si are used. For the heat dissipation module, the same material is used but the direction of electron movement is changed (changing the polarity of the applied voltage).

[0062] Variable bandgap semiconductors are made in the form of plates. They can be produced by liquid phase epitaxy, gas phase ion beam epitaxy, diffusion or by depositing germanium and silicon on aluminum or nickel substrates.

[0063] At the same time, the substrate may use other materials that match the characteristics of the variable bandgap semiconductor material.

[0064] The contact point is a horizontally oriented plate that is non-detachably connected to the outer surface of the semiconductor module. For different semiconductors, different materials are used for the contact point, in particular various metals or alloys with high thermal conductivity, chemical stability and high temperature resistance. The contact point can be coated in layers.

[0065] The claimed device works as follows. Electrons constituting the current enter the semiconductor element of the pre-processing module from the power module 1 through the magnesium conductor 8. The average energy of the electrons in the conductor 8 is equal to the energy within the range of ±kT of the Fermi level of the conductor material (the temperature T is different from absolute zero, and the occupation density of the electrons to the energy level depends on the temperature of the material. When T=0K, the energy level with the lowest energy is occupied. When the temperature rises, some electrons will occupy higher energy levels (like gas molecules moving disorderly in metals). The occupation density of electrons to the energy level is described by the Fermi-Dirac function). In the pre-processing module, the average energy of the electrons is reduced to a level corresponding to the Fermi level of the nickel conductor 7. In the semiconductor element I of the pre-processing module 2, carrier recombination causes the average energy of the electrons to decrease because the electrons occupy lower energy levels (depending on whether it is a direct bandgap semiconductor or an indirect bandgap semiconductor), generating phonons (lattice thermal vibrations) or photons (which can leave the structure or be absorbed to generate phonons). When heat transfer and convection are difficult to dissipate heat, a device that converts electron energy into photons can partially or completely solve this problem. The average energy of the electrons leaving the pre-processing module 2 is lower than that of the electrons entering the pre-processing module, and they enter the semiconductor element III of the cooling module 3 through the conductor 7. In the semiconductor element III of the cooling module 3, the electrons enter the semiconductor region with a high Fermi level stepwise (if the cooling module 3 is composed of a uniformly doped homogeneous semiconductor or a semiconductor structure with a pn junction) or gradually (if the cooling module 3 is composed of a variable bandgap structure semiconductor) under the action of the external field and phonon absorption, and cool the semiconductor element III by absorbing phonons (the generation of electron-hole pairs is the main physical process, and the Thomson effect (for the variable bandgap structure) is a secondary process), which is close to the object to be cooled (such as a computer processor) and cools the object. The average energy of the electrons leaving the cooling module 3 is higher than that of the electrons entering the cooling module, corresponding to the Fermi level of the conductor 8 material, which allows the absorbed heat to be transmitted over a long distance without thermalization in the form of electronic energy constituting current. The electrons enter the semiconductor element II of the heat dissipation module 4 through the conductor 8, where a process similar to that of the pre-processing module 2 occurs, and the heat is dissipated to the surrounding environment through the surface of the semiconductor element II. In addition, when heat dissipation by heat transfer and convection is impossible or insufficient, at least one semiconductor element 6 that converts electron energy into quanta is installed in front of the heat dissipation module to additionally dissipate heat to the surrounding environment. From the heat dissipation module 4, electrons with an average energy lower than that entering the heat dissipation module enter the power module 1. In the case of using a plurality of semiconductor elements II in the heat dissipation module 4 and a plurality of semiconductor elements III in the cooling module 3 in the FCU structure, electrons from the previous semiconductor element II sequentially enter the next semiconductor element III and semiconductor element II connected in sequence through conductors 7 and 8, and finally from the last semiconductor element III of the required number of semiconductor elements II and III in the FCU structure, the electrons enter the power module 1.

[0066] The control module measures the temperature (cooled object, cooling element, heat dissipation element), and when the parameter deviates from the set value, changes the power supply characteristics to restore the temperature parameter to the set value.

[0067] The presence of a heat dissipation module in the claimed device allows the heat obtained from the cooling module to be dissipated into the surrounding environment, which increases the capacity and efficiency of the FCU, since the device will not overheat due to heat dissipation, thereby avoiding the device being shut down for cooling and preventing malfunctions.

[0068] The present invention has been disclosed with reference to specific embodiments. Other embodiments may be found by a professional without changing the essence of the present invention. Therefore, the scope of the present invention is limited only by the following claims.

Claims

1. A solid-state cooling device comprising: A pre-processing module is composed of a semiconductor element, a substrate is provided on one side surface of the pre-processing module, a first connection terminal for connecting to a circuit is provided on the outer surface of the substrate, and a second connection terminal for connecting to the circuit is provided on the other surface of the semiconductor element, wherein the semiconductor element can reduce the energy of electrons in a current entering the second connection terminal from a power source through a wire, and the first connection terminal of the pre-processing module is connected to the second connection terminal of the cooling module through a wire; A cooling module, comprising at least one semiconductor element located on a substrate, wherein the first and second connection terminals are located on outer surfaces of the substrate and the semiconductor element, respectively, wherein one of the outer surfaces is in direct contact with an object to be cooled, and the first connection terminal of the cooling module is connected to the second connection terminal of the heat dissipation module through a wire; The heat dissipation module is a certain distance away from the cooling module and is composed of at least one semiconductor element. A substrate is provided on one surface of the heat dissipation module, and a first connection terminal for connecting to the circuit is provided on the outer surface of the substrate. A second connection terminal for connecting to the circuit is provided on the other surface of the semiconductor element. The second connection terminal is connected to the first connection terminal of the cooling module through a wire, and the first connection terminal is connected to the power supply through a wire.

2. The device according to claim 1, characterized in that In the case where the heat dissipation module uses multiple semiconductor elements and the cooling module uses multiple semiconductor elements, the first connecting terminal of the first semiconductor element of the cooling module is connected to the second connecting terminal of the first semiconductor element of the heat dissipation module through a wire, the first connecting terminal of the first semiconductor element of the heat dissipation module is connected to the second connecting terminal of the next semiconductor element of the cooling module through a wire, and the first connecting terminal of the next semiconductor element of the cooling module is connected to the second connecting terminal of the first semiconductor element of the heat dissipation module or to the power module through a wire.

3. The device according to claim 1, characterized in that The semiconductor elements of the cooling module are composed of: n-type conductive semiconductor; variable conductivity semiconductor from p-type to n-type; variable bandgap structure semiconductor, whose structure changes from a larger work function semiconductor to a smaller work function semiconductor, and has p-type conductivity; variable bandgap structure semiconductor, whose structure changes from a larger work function semiconductor to a smaller work function semiconductor, and is a pn structure with gradual doping from p-type to n-type along the current direction.

4. The device according to claim 1, characterized in that The semiconductor elements of the heat dissipation module or the pre-processing module are composed of: a p-type conductive semiconductor; two semiconductors, one is an n-type conductive semiconductor and the other is a p-type conductive semiconductor; a variable conductivity semiconductor: from n-type conductivity to p-type conductivity; a variable bandgap structure semiconductor, whose structure changes from a smaller work function semiconductor to a larger work function semiconductor, and has n-type conductivity; a variable bandgap structure semiconductor, whose structure changes from a smaller work function semiconductor to a larger work function semiconductor, and is a pn structure with gradual doping from n-type to p-type along the current direction.

5. The device according to claim 1, characterized in that In order to dissipate heat from the heat dissipation module or the pre-processing module, a heat sink is additionally used.

6. The device according to claim 1, characterized in that A semiconductor element that converts electronic energy into quanta is installed and electrically connected in front of the heat dissipation module.

7. The device according to claim 1, characterized in that A semiconductor element that converts electron energy into quanta is installed and electrically connected in front of the pre-processing module.

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