Hafnium-based ferroelectric device and performance modulation method thereof
By precisely controlling the coercive electric field strength parameters of hafnium-based ferroelectric thin films through particle beam irradiation and rapid annealing, the durability and reliability issues of hafnium-based ferroelectric thin film materials were solved, and the performance of the devices was improved.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- INST OF MICROELECTRONICS CHINESE ACAD OF SCI LTD
- Filing Date
- 2025-01-07
- Publication Date
- 2026-05-05
AI Technical Summary
Hafnium-based ferroelectric thin film materials have poor cycle durability, leading to reliability issues, and existing technologies make it difficult to precisely control their coercive electric field strength parameters.
By adjusting the coercive electric field strength parameters of hafnium-based ferroelectric thin films using particle beam irradiation in hafnium-based ferroelectric devices, the charged state and oxygen vacancy concentration of intrinsic oxygen vacancies can be adjusted. Combined with rapid annealing, the polarization reversal barrier of hafnium-based ferroelectric thin films can be precisely controlled.
This reduces the polarization reversal barrier of hafnium-based ferroelectric thin films, improves the cycle durability and reliability of devices, and promotes their commercial application.
Smart Images
Figure CN119866172B_ABST
Abstract
Description
Technical Field
[0001] This disclosure relates to the field of ferroelectric thin film technology, and more specifically, to a hafnium-based ferroelectric device and a method for regulating its performance. Background Technology
[0002] Memory is one of the three pillars of the semiconductor industry, and hafnium-based ferroelectric materials have become one of the key candidate materials for the next generation of new ferroelectric memory due to their advantages such as high compatibility with semiconductor processes and mature manufacturing processes, bringing new opportunities for the development of ferroelectric memory technology.
[0003] In the process of realizing the present invention, the inventors discovered reliability problems in related technologies, such as poor cycle durability of hafnium-based ferroelectric thin film materials and devices. Summary of the Invention
[0004] In view of this, the present disclosure provides a hafnium-based ferroelectric device and a method for regulating its performance.
[0005] One aspect of this disclosure provides a hafnium-based ferroelectric device and a method for regulating the performance of the same, comprising: a substrate layer; a bottom electrode layer on the substrate layer; a hafnium-based ferroelectric thin film on the bottom electrode layer, wherein the coercive electric field strength parameter of the hafnium-based ferroelectric thin film is improved by particle beam irradiation; and a top electrode layer on the hafnium-based ferroelectric thin film.
[0006] According to embodiments of this disclosure, the material of the hafnium-based ferroelectric thin film includes one of Zr-doped HfO2, La-doped HfO2, Al-doped HfO2, Si-doped HfO2, and Y-doped HfO2; and the thickness of the target hafnium-based ferroelectric thin film ranges from 5 nm to 50 nm.
[0007] According to embodiments of this disclosure, the bottom electrode layer is made of at least one of titanium nitride, tungsten, gold, and ruthenium; the thickness of the bottom electrode layer ranges from 30 nm to 100 nm; the top electrode layer is made of at least one of titanium nitride, tungsten, gold, and ruthenium; the thickness of the top electrode layer ranges from 20 nm to 40 nm; and the substrate layer is made of doped silicon.
[0008] Another aspect of this disclosure provides a method for performance regulation of a hafnium-based ferroelectric device, comprising: depositing a bottom electrode layer on a substrate; depositing a hafnium-based ferroelectric thin film on the bottom electrode layer; depositing a top electrode layer on the hafnium-based ferroelectric thin film to obtain an intermediate device; and performing heat treatment on the intermediate device to obtain a hafnium-based ferroelectric device; and adjusting the coercive electric field strength parameter of the hafnium-based ferroelectric thin film in the hafnium-based ferroelectric device by irradiating the hafnium-based ferroelectric device with a particle beam to obtain a target hafnium-based ferroelectric device with regulated performance.
[0009] According to embodiments of this disclosure, a target hafnium-based ferroelectric device with regulated performance is obtained by irradiating the hafnium-based ferroelectric device with a particle beam to adjust the coercive electric field strength parameter of the hafnium-based ferroelectric thin film in the hafnium-based ferroelectric device. This includes: adjusting the charge state and oxygen vacancy concentration of intrinsic oxygen vacancies in the hafnium-based ferroelectric thin film by irradiating the hafnium-based ferroelectric device with a particle beam, thereby adjusting the coercive electric field strength parameter.
[0010] According to embodiments of this disclosure, the particle beam is a neutron beam, a proton beam, or a He beam. 2+ Ion beam, electron beam and 60 One of the gamma rays in Co.
[0011] According to embodiments of this disclosure, the irradiation energy range of the neutron beam is 1×10⁻⁶. -7 MeV~1×10 2 MeV; the irradiation energy range of the proton beam is 1×10⁻⁶. -1 keV ~1×50 MeV; the irradiation energy range of the electron beam is 1×10⁻⁶. -1 keV~10MeV; 60 The ion dose range of Co γ rays is 1 Gy ~ 1 × 10⁻⁶. 5 Gy;He 2+ The irradiation energy range of the ion beam is 10 keV to 1 MeV.
[0012] According to embodiments of this disclosure, the particle fluence rate of the neutron beam ranges from 1 × 10⁻⁶. 5 n / cm 2 / s ~1×10 14 n / cm 2 / s; the particle fluence rate of the proton beam ranges from 1×10⁻⁶. 7 p / cm 2 / s~1×10 16 p / cm 2 / s; the particle fluence rate of the electron beam ranges from 1×10⁻⁶. 7 p / cm 2 / s ~1×10 16 p / cm 2 / s; 60 The fluence rate of Co γ rays ranges from 1×10⁻⁶. 5 p / cm 2 / s~1×10 15 p / cm 2 / s;He 2+ The particle fluence rate of the ion beam ranges from 1 × 10⁻⁶. 8 ions / cm 2 / s ~1×1015 ions / cm 2 / s.
[0013] According to embodiments of this disclosure, the irradiation angle of the particle beam ranges from 5° to 90°.
[0014] According to an embodiment of this disclosure, a hafnium-based ferroelectric device is obtained by rapidly annealing an intermediate device, including: rapidly annealing the intermediate device for a heating time ranging from 10 s to 60 s and a heating temperature ranging from 300 ℃ to 700 ℃.
[0015] According to embodiments of this disclosure, by treating hafnium-based ferroelectric thin films with particle beams, ionizing radiation and displacement radiation effects are generated, and the charge characteristics and concentration of intrinsic oxygen vacancies in hafnium-based ferroelectric thin films are targeted and controlled. This allows for precise adjustment of the coercive electric field strength parameters of the hafnium-based ferroelectric thin films, reduces the polarization reversal barrier of the hafnium-based ferroelectric thin films, improves the cycle durability of hafnium-based ferroelectric devices, and thus improves the reliability of hafnium-based ferroelectric devices. Attached Figure Description
[0016] The above and other objects, features and advantages of this disclosure will become clearer from the following description of embodiments with reference to the accompanying drawings, in which:
[0017] Figure 1 A schematic diagram of the structure of a hafnium-based ferroelectric device according to an embodiment of the present disclosure is shown.
[0018] Figure 2 A flowchart illustrating a method for performance regulation of hafnium-based ferroelectric devices according to an embodiment of the present disclosure is shown.
[0019] Figure 3 The diagram schematically illustrates the coercive electric field strength (E) of a hafnium-based ferroelectric device at different irradiation flux rates according to embodiments of the present disclosure. c A diagram showing the comparison of values.
[0020] Figure 4 The illustration shows a schematic flowchart of the fabrication and performance testing of hafnium-based ferroelectric devices according to embodiments of the present disclosure. Detailed Implementation
[0021] The embodiments of the present disclosure will now be described with reference to the accompanying drawings. However, it should be understood that these descriptions are exemplary only and are not intended to limit the scope of the disclosure. In the following detailed description, numerous specific details are set forth to provide a thorough understanding of the embodiments of the present disclosure for ease of explanation. However, it will be apparent that one or more embodiments may be practiced without these specific details. Furthermore, descriptions of well-known structures and techniques are omitted in the following description to avoid unnecessarily obscuring the concepts of the present disclosure.
[0022] The terminology used herein is for the purpose of describing particular embodiments only and is not intended to limit this disclosure. The terms “comprising,” “including,” etc., as used herein indicate the presence of the stated features, steps, operations, and / or components, but do not exclude the presence or addition of one or more other features, steps, operations, or components.
[0023] All terms used herein (including technical and scientific terms) have the meanings commonly understood by those skilled in the art, unless otherwise defined. It should be noted that the terms used herein are to be interpreted in a manner consistent with the context of this specification, and not in an idealized or overly rigid way.
[0024] When using expressions such as "at least one of A, B and C", they should generally be interpreted in accordance with the meaning that is commonly understood by those skilled in the art (e.g., "a system having at least one of A, B and C" should include, but is not limited to, a system having A alone, a system having B alone, a system having C alone, a system having A and B, a system having A and C, a system having B and C, and / or a system having A, B and C, etc.).
[0025] In the embodiments disclosed herein, the collection, updating, analysis, processing, use, transmission, provision, disclosure, and storage of data (e.g., including but not limited to user personal information) comply with relevant laws and regulations, are used for legitimate purposes, and do not violate public order and good morals. In particular, necessary measures have been taken to prevent unauthorized access to user personal information data and to safeguard user personal information security, network security, and national security.
[0026] In the embodiments disclosed herein, user authorization or consent is obtained before acquiring or collecting user personal information.
[0027] Ferroelectric memories, represented by perovskite ferroelectric materials, can meet the application needs of most semiconductor industries. However, with the advent of the post-Moore's Law era, the poor compatibility of perovskite ferroelectric materials with semiconductor processes and the significant size effect have made it difficult to miniaturize and integrate ferroelectric memories, resulting in long-term development obstacles such as high manufacturing costs and low storage density.
[0028] While hafnium-based ferroelectric materials possess advantages such as high compatibility with semiconductor processes and mature fabrication techniques, hafnium-based ferroelectric thin films exhibit a relatively large coercive electric field strength (E0). c This can lead to poor cycle durability in hafnium-based ferroelectric devices, thus hindering the widespread application of hafnium-based ferroelectric thin film materials. The Et of hafnium-based ferroelectric thin films... c With breakdown electric field strength (E) bd It is quite close, specifically E. c / E bd ≈12.5%~50%, while the larger E c This can cause significant damage to the material itself after each polarization reversal in hafnium-based ferroelectric devices. Related technologies require a higher external electric field to achieve polarization reversal, but this also leads to increased power consumption and decreased read / write speeds in hafnium-based ferroelectric devices.
[0029] Based on this, the inventors discovered that the intrinsic oxygen vacancies (V0) in hafnium-based ferroelectric thin films... O The concentration affects the room-temperature stable phase structure of hafnium-based ferroelectric thin films, which is beneficial to reducing the polarization reversal barrier of hafnium-based ferroelectric thin films.
[0030] To reduce the E of hafnium-based ferroelectric thin film materials c To address the reliability issues of ferroelectric devices, related technologies typically adjust the Vt content in hafnium-based ferroelectric thin films by changing the type and concentration of doping elements, electrode type, and rapid annealing conditions. O Its properties, for hafnium-based ferroelectric thin films V O Changes in its characteristics are collective regulatory behaviors, making it difficult to control V. O Other microscopic physical properties can be precisely controlled.
[0031] In order to at least partially solve the technical problems existing in the related art, the embodiments of this disclosure provide a hafnium-based ferroelectric device, including: a substrate layer; a bottom electrode layer located on the substrate layer; a hafnium-based ferroelectric thin film located on the bottom electrode layer, wherein the coercive electric field strength parameter of the hafnium-based ferroelectric thin film is improved by particle beam irradiation; and a top electrode layer located on the hafnium-based ferroelectric thin film.
[0032] Figure 1 A schematic diagram of the structure of a hafnium-based ferroelectric device according to an embodiment of the present disclosure is shown.
[0033] like Figure 1 As shown, the device 100 includes a substrate layer 110, a bottom electrode layer 120, a hafnium-based ferroelectric thin film 130, and a top electrode layer 140, wherein the top electrode layer includes a first top electrode 141 and a second top electrode 142. For example, the first top electrode 141 and the second top electrode 142 may be made of the same material or different materials, which is not limited here.
[0034] According to embodiments of this disclosure, the substrate layer 110 can provide mechanical support for the device. To ensure the stability and reliability of the device, the thickness, flatness, and material properties of the substrate layer can be set according to actual needs.
[0035] According to embodiments of this disclosure, the bottom electrode layer 120 is located between the substrate layer and the hafnium-based ferroelectric thin film, and is used to provide a current channel so that current can pass smoothly through the hafnium-based ferroelectric thin film.
[0036] According to embodiments of this disclosure, the material of the hafnium-based ferroelectric thin film 130 can be hafnium dioxide doped with other elements, thereby giving the hafnium-based ferroelectric thin film 130 excellent ferroelectric properties.
[0037] According to embodiments of this disclosure, the inventors discovered that intrinsic oxygen vacancies (V0) in hafnium-based ferroelectric thin films... O With increasing concentration, the room-temperature stable phase structure of hafnium-based ferroelectric thin films changes from the original monoclinic m-phase (P21 / c) structure to a tetragonal t-phase (P42 / nmc) structure. Stabilizing the intermediate t-phase structure of hafnium-based ferroelectric thin films helps to reduce the polarization reversal barrier, thereby reducing E. c Meanwhile, V O Charged to become V O 2+ It also helps to reduce the polarization reversal barrier of hafnium-based ferroelectric thin films, thereby reducing E c .
[0038] In some embodiments, hafnium oxide-based ferroelectric crystals can be fabricated by selectively doping with elements such as Zr, La, Al, Si, and Y. In some embodiments, ozone treatment of the bottom electrode can reduce the concentration of interface defects, thereby improving interface quality and optimizing the performance of the thin film and device. In some embodiments, hafnium-based ferroelectric thin films can be fabricated under low thermal budget conditions to optimize the free Vt within the film. O The distribution and quantity. However, the inventors discovered that the method in this embodiment affects the distribution and quantity of hafnium-based ferroelectric thin films V. O The changes in its charge characteristics are collectively regulated, that is, the Vc within each crystal phase structure of the doped hafnium-based ferroelectric thin film. O Concentration and distribution are difficult to determine for V O The arrangement order, charge characteristics, and concentration of the particles are precisely controlled.
[0039] According to embodiments of this disclosure, the particle beam may include protons, neutrons, or He. 2+ Ions and other particles capable of producing radiation effects, namely ionizing radiation and displacement radiation. The synergistic effect can generate specific crystal phase structures within hafnium-based ferroelectric thin film materials and devices, specifically reducing the Et of hafnium-based ferroelectric thin films. c For example, the average fluence rate of a proton beam can be 4 × 10⁻⁶. 9 p / cm 2 .
[0040] According to embodiments of this disclosure, the ionizing radiation effect can cause the intrinsic oxygen vacancies (V0) in a hafnium-based ferroelectric thin film to... O The charge lowers the polarization reversal barrier to some extent; meanwhile, the displacement radiation effect can create new point defects to increase V. OThe concentration thus stabilizes the intermediate t-phase structure. Therefore, the Et of hafnium-based ferroelectric thin films can be selectively controlled by adjusting the energy, flux, and incident angle of the irradiated ions. c size.
[0041] According to embodiments of this disclosure, the top electrode layer includes two top electrodes, which may be made of conductive material, and together with the bottom electrode layer, form a complete current channel.
[0042] According to embodiments of this disclosure, by treating hafnium-based ferroelectric thin films with particle beams, ionizing radiation and displacement radiation effects are generated. The orderliness, charge characteristics, and concentration of intrinsic oxygen vacancies in the hafnium-based ferroelectric thin films are specifically controlled, thereby precisely adjusting the coercive electric field strength parameters of the hafnium-based ferroelectric thin films, reducing the polarization reversal barrier of the hafnium-based ferroelectric thin films, improving the cycle durability of hafnium-based ferroelectric devices, and thus improving the reliability of hafnium-based ferroelectric devices.
[0043] According to embodiments of this disclosure, the material of the hafnium-based ferroelectric thin film includes one of Zr-doped HfO2, La-doped HfO2, Al-doped HfO2, Si-doped HfO2, and Y-doped HfO2; and the thickness of the target hafnium-based ferroelectric thin film ranges from 5 nm to 50 nm.
[0044] According to embodiments of this disclosure, by setting the doping elements and film thickness of the hafnium-based ferroelectric thin film, it is beneficial to adjust the ferroelectric properties of the hafnium-based ferroelectric thin film, thereby improving the cycle durability of the hafnium-based ferroelectric device.
[0045] According to embodiments of this disclosure, the bottom electrode layer is made of at least one of titanium nitride, tungsten, gold, and ruthenium; the thickness of the bottom electrode layer ranges from 30 nm to 100 nm; the top electrode layer is made of at least one of titanium nitride, tungsten, gold, and ruthenium; the thickness of the top electrode layer ranges from 20 nm to 40 nm; and the substrate layer is made of doped silicon.
[0046] According to embodiments of this disclosure, by setting the thickness and material of the top electrode layer and the bottom electrode layer, as well as the doping elements of the substrate layer, it is beneficial to control the conductivity of the electrodes, thereby helping to obtain more stable and reliable hafnium-based ferroelectric devices.
[0047] Based on the above-mentioned hafnium-based ferroelectric principle, embodiments of this disclosure also provide a method for fabricating a hafnium-based ferroelectric device, which will be described below. Figures 2-4 The fabrication method of the device 100 in the above embodiment will be described.
[0048] Figure 2 A flowchart illustrating a method for fabricating a hafnium-based ferroelectric device according to an embodiment of the present disclosure is shown.
[0049] like Figure 2As shown, the method includes operations S210~S250.
[0050] In operation S210, a bottom electrode layer is deposited on the substrate.
[0051] In operation S220, a hafnium-based ferroelectric thin film is deposited on the bottom electrode layer.
[0052] In operation S230, a top electrode layer is deposited on a hafnium-based ferroelectric thin film to obtain an intermediate device.
[0053] By operating S240, the intermediate device is rapidly annealed to obtain a hafnium-based ferroelectric device.
[0054] In operation S250, the coercive electric field strength parameters of the hafnium-based ferroelectric thin film in the hafnium-based ferroelectric device are adjusted by irradiating the hafnium-based ferroelectric device with a particle beam, thereby obtaining the target hafnium-based ferroelectric device with regulated performance.
[0055] According to embodiments of this disclosure, the bottom electrode layer can be deposited using a magnetron sputtering method, for example, the deposition process can last from 5 to 30 minutes. Preferably, it can last 10 minutes.
[0056] According to embodiments of this disclosure, hafnium-based ferroelectric thin films can be grown on the surface of the bottom electrode layer using methods such as atomic layer deposition (ALD), and the top electrode layer can be deposited using methods such as magnetron sputtering.
[0057] According to embodiments of this disclosure, by subjecting intermediate devices to heat treatment, the intermediate devices can be brought to a stable state, thereby improving the overall performance of the devices. For example, heat treatment may include rapid annealing.
[0058] According to embodiments of this disclosure, the irradiation treatment of hafnium-based ferroelectric thin films can be performed by first determining the parameters of the irradiated ions, including the type, energy, angle, and ion flux of the irradiated ions.
[0059] According to embodiments of this disclosure, when irradiated ions irradiate a hafnium-based ferroelectric thin film, they must first penetrate the top electrode layer. The coercive electric field strength parameter of the hafnium-based ferroelectric thin film in the hafnium-based ferroelectric device can be dynamically controlled by adjusting the irradiation parameters of the particle beam. Since the irradiated ions must pass through the top electrode layer before reaching the hafnium-based ferroelectric thin film, it is necessary to select irradiated ions with high irradiation energy and relatively high ion fluence rate in order to reduce the Eo of the hafnium-based ferroelectric thin film. cThe technical effects are as follows: According to embodiments of this disclosure, by treating hafnium-based ferroelectric thin films with particle beams, ionizing radiation and displacement radiation effects are generated. This allows for targeted control of the intrinsic oxygen vacancy arrangement order, charge characteristics, and concentration of the hafnium-based ferroelectric thin film, thereby precisely adjusting the coercive electric field strength parameters of the hafnium-based ferroelectric thin film, reducing the polarization reversal barrier, and improving the durability and reliability of the hafnium-based ferroelectric device.
[0060] According to an embodiment of this disclosure, a hafnium-based ferroelectric device is obtained by rapidly annealing an intermediate device, including: rapidly annealing the intermediate device for a duration ranging from 10 s to 60 s and a heating temperature ranging from 300 ℃ to 700 ℃.
[0061] According to embodiments of this disclosure, a target hafnium-based ferroelectric device with regulated performance is obtained by irradiating the hafnium-based ferroelectric device with a particle beam to adjust the coercive electric field strength parameter of the hafnium-based ferroelectric thin film in the hafnium-based ferroelectric device. This includes: adjusting the charge state and oxygen vacancy concentration of intrinsic oxygen vacancies in the hafnium-based ferroelectric thin film by irradiating the hafnium-based ferroelectric device with a particle beam, thereby adjusting the coercive electric field strength parameter.
[0062] According to embodiments of this disclosure, the irradiation parameters of the particle beam irradiation can be set according to actual needs, thereby selectively adjusting the charge state and oxygen vacancy concentration of intrinsic oxygen vacancies in the hafnium-based ferroelectric thin film, thereby reducing the polarization reversal barrier of the hafnium-based ferroelectric thin film and adjusting the coercive electric field strength parameters.
[0063] According to embodiments of this disclosure, by specifically controlling the concentration and charge characteristics of intrinsic oxygen vacancies, the coercive electric field strength parameters of hafnium-based ferroelectric thin films can be precisely adjusted, solving the technical problem in related technologies where the performance of hafnium-based ferroelectric thin films cannot be precisely controlled. This further improves the durability of hafnium-based ferroelectric devices and lays a solid foundation for the large-scale commercial application of hafnium-based ferroelectric thin film materials and devices.
[0064] According to embodiments of this disclosure, the particle beam is a neutron beam, a proton beam, or a He beam. 2+ Ion beam, electron beam and 60 One of the gamma rays in Co.
[0065] According to embodiments of this disclosure, the irradiation energy range of the neutron beam is 1×10⁻⁶. -7 MeV~1×10 2 MeV; the irradiation energy range of the proton beam is 1×10⁻⁶. -1 keV ~1×50 MeV; the irradiation energy range of the electron beam is 1×10⁻⁶. -1 keV~10MeV; γ 60The ion dose range of Co rays is 1 Gy ~ 1 × 10⁻⁶. 5 Gy; He 2+ The irradiation energy range for ions is 10 keV to 1 MeV.
[0066] According to embodiments of this disclosure, the ion fluence rate of the neutron beam ranges from 1 × 10⁻⁶. 5 n / cm 2 / s ~1×10 14 n / cm 2 / s; the ion fluence rate of the proton beam ranges from 1×10⁻⁶. 7 p / cm 2 / s~1×10 16 p / cm 2 / s; the electron beam ion fluence rate ranges from 1×10⁻⁶. 7 p / cm 2 / s ~1×10 16 p / cm 2 / s; 60 The fluence rate of Co γ rays ranges from 1×10⁻⁶. 5 p / cm 2 / s~1×10 15 p / cm 2 / s;He 2+ The ion flux rate ranges from 1×10⁻⁶. 8 ions / cm 2 / s ~1×10 15 ions / cm 2 / s.
[0067] According to embodiments of this disclosure, the irradiation angle of the particle beam ranges from 5° to 90°.
[0068] According to embodiments of this disclosure, the beam size can be 5000 nm × 400 nm.
[0069] According to the embodiments of this disclosure, in order to verify the performance of the hafnium-based ferroelectric thin film prepared in the embodiments of this disclosure, the performance of the hafnium-based ferroelectric thin film can be evaluated and optimized through comparative experiments from both macroscopic and microscopic perspectives.
[0070] For example, from the perspective of macroscopic electrical parameters, the Et of hafnium-based ferroelectric thin film materials and devices can be precisely controlled in a targeted and selective manner. cTo improve the durability of devices, conventional electrical methods can be used to test the performance level of hafnium-based ferroelectric devices. For example, test data can include current-voltage curves, capacitance-voltage characteristic curves, polarization intensity-voltage characteristic curves, etc., to verify performance indicators such as cycle durability. Irradiated devices (those subjected to particle beam irradiation) and control devices (those not subjected to particle beam irradiation) can be set up. By obtaining the original electrical parameters and ferroelectric properties of the control group devices, the impact of irradiation on EF can be compared from an electrical performance perspective. c The impact of this.
[0071] For example, from a microstructural perspective, new point defects can be created to increase the Vo concentration, thereby stabilizing the intermediate t-phase structure. The m-phase inside the hafnium-based thin film material tends to transform into the t-phase to reduce the polarization reversal barrier. Aberration-corrected electron microscopy can be used to observe the irradiated and control devices at the atomic level. High-Angle Annular Dark Field (HAADF) imaging can be used to calibrate the phases of the hafnium-based ferroelectric thin film. Electron Energy Loss Spectroscopy (EELS) can be used to observe the Vo concentration within the film. Furthermore, electron holography can be used to observe the Vo charge within the film to determine the precise directional control of the irradiation process on the internal microstructure of the hafnium-based thin film material.
[0072] According to embodiments of this disclosure, based on electrical test results and microstructure analysis results, the impact of irradiation parameters on the performance of hafnium-based ferroelectric devices can be comprehensively judged. By establishing a relationship model between irradiation process parameters and performance, the irradiation process parameters for device performance regulation can be determined, thereby further optimizing the performance of hafnium-based ferroelectric devices.
[0073] To better understand the contents of this disclosure, the invention will be described below through specific embodiments.
[0074] (1) Fabrication of hafnium-based ferroelectric devices. The structure of the hafnium-based ferroelectric devices is W / HZO / W. First, W is deposited as the bottom electrode on a lightly doped Si substrate using magnetron sputtering for 10 min, with a thickness of 50 nm to 100 nm. Then, a hafnium-based ferroelectric thin film with a thickness of 10 nm to 50 nm is grown on the surface of the bottom electrode using atomic layer deposition. Next, W is prepared as the top electrode, and the entire device is rapidly annealed at a temperature of 400 ℃ to 700 ℃ for 10 s to 50 s. The prepared devices are labeled as the irradiation group and the control group, respectively.
[0075] (2) Irradiation treatment. The irradiated devices are exposed to irradiation conditions, and charged ions or uncharged particles are selected as the radiation source. In this embodiment, charged ions (protons) are used as the incident source, the incident energy is selected as 1 MeV, the beam size is 5000 nm × 400 nm, and the average injection amount is 4 × 10⁻⁶. 9 p / cm 2 The incident angle is 5°. For example, the incident angle can be determined based on the plane in which the hafnium-based ferroelectric thin film is located and the incident direction of the particle beam.
[0076] (3) Irradiation effect analysis. Compared with the control group devices, the E of the irradiated group devices... c The value is 1.61 MV / cm. This is for the irradiated array devices after proton irradiation. c The value decreased by 19%, reaching 1.30 MV / cm. Electron microscopic analysis revealed that after proton irradiation, the m-phase within the hafnium-based thin film material tended to transform into the t-phase, reducing the energy required to change the electrode polarization. This microscopically demonstrates that the irradiation effect leads to E... c This reduction provides a new method for improving the durability of hafnium-based devices.
[0077] And, as Figure 3 As shown, in 1×10 11 Irradiation flux rate, 1×10 12 Irradiation flux rate, 1×10 13 Irradiation flux rate, 1×10 14 E of hafnium-based ferroelectric devices at irradiation flux rate c The values decrease sequentially. Based on this, it can be concluded that the higher the ion flux rate, the higher the E value. c The lower the value, the more flexible the Ei of hafnium-based ferroelectric devices can be by adjusting the ion flux rate. c This allows for flexible control over the durability of hafnium-based ferroelectric devices.
[0078] According to embodiments of this disclosure, in order to better understand the fabrication and performance testing process of the hafnium-based ferroelectric devices according to embodiments of this disclosure, the following will be based on... Figure 4 Provide an overall explanation.
[0079] Figure 4 The illustration shows a schematic flowchart of the fabrication and performance testing of hafnium-based ferroelectric devices according to embodiments of the present disclosure.
[0080] like Figure 4As shown, the device structure of hafnium-based ferroelectric devices is designed, and the materials and devices of hafnium-based ferroelectric devices are prepared according to the structural design results. The prepared devices are subjected to irradiation process to obtain the target hafnium-based ferroelectric devices. The unirradiated hafnium-based ferroelectric devices correspond to the control group devices, and the irradiated hafnium-based ferroelectric devices correspond to the irradiated group devices. The irradiation process requires setting the type of irradiated ions, the irradiated ion flux rate, the irradiation energy, and the irradiation angle.
[0081] According to embodiments of this disclosure, macroscopic and microscopic performance tests can be performed on control group devices and irradiated group devices using electrical testing followed by microscopic observation and analysis. Based on the performance test results, the irradiation parameters can be optimized to obtain hafnium-based ferroelectric devices with better performance.
[0082] The flowcharts and block diagrams in the accompanying drawings illustrate the architecture, functionality, and operation of possible implementations of systems, methods, and computer program products according to various embodiments of the present disclosure. In this regard, each block in a flowchart or block diagram may represent a module, segment, or portion of code containing one or more executable instructions for implementing a specified logical function. It should also be noted that in some alternative implementations, the functions indicated in the blocks may occur in a different order than those indicated in the drawings. For example, two consecutively indicated blocks may actually be executed substantially in parallel, and they may sometimes be executed in reverse order, depending on the functions involved. It should also be noted that each block in a block diagram or flowchart, and combinations of blocks in a block diagram or flowchart, may be implemented using a dedicated hardware-based system that performs the specified function or operation, or using a combination of dedicated hardware and computer instructions. Those skilled in the art will understand that the features described in the various embodiments of the present disclosure can be combined and / or combined in various ways, even if such combinations are not explicitly described in the present disclosure. In particular, the features described in the various embodiments of this disclosure may be combined and / or combined in various ways without departing from the spirit and teachings of this disclosure. All such combinations and / or combinations fall within the scope of this disclosure.
[0083] The embodiments of this disclosure have been described above. However, these embodiments are for illustrative purposes only and are not intended to limit the scope of this disclosure. Although various embodiments have been described above, this does not mean that the measures in the various embodiments cannot be used advantageously in combination. Various substitutions and modifications can be made by those skilled in the art without departing from the scope of this disclosure, and all such substitutions and modifications should fall within the scope of this disclosure.
Claims
1. A hafnium-based ferroelectric device modified by irradiated particles, comprising: Substrate layer; The bottom electrode layer is located on the substrate layer; A hafnium-based ferroelectric thin film located on the bottom electrode layer, wherein the coercive electric field strength parameter of the hafnium-based ferroelectric thin film is improved by particle beam irradiation modulation; wherein the particle beam is used to generate a t-phase structure within the hafnium-based ferroelectric thin film based on the synergistic effects of ionizing radiation and displacement radiation to reduce the coercive electric field strength parameter, the coercive electric field strength parameter including 1.30 MV / cm; and A top electrode layer located on the hafnium-based ferroelectric thin film; wherein the particle beam irradiates the hafnium-based ferroelectric thin film while passing through the top electrode layer; The particle beam includes a proton beam; the irradiation energy range of the proton beam is 1×10⁻⁶. -1 The proton beam has a particle fluence range of keV to 1×50MeV; the particle fluence rate of the proton beam is 1×10⁻⁶. 7 p / cm 2 / s~1×10 16 p / cm 2 / s.
2. The hafnium-based ferroelectric device according to claim 1, wherein, The hafnium-based ferroelectric thin film is made of one of the following materials: Zr-doped HfO2, La-doped HfO2, Al-doped HfO2, Si-doped HfO2, and Y-doped HfO2; and The thickness of the hafnium-based ferroelectric thin film ranges from 5 nm to 50 nm.
3. The hafnium-based ferroelectric device according to claim 1, wherein, The material of the bottom electrode layer includes at least one of titanium nitride, tungsten, gold, and ruthenium; The thickness of the bottom electrode layer ranges from 30 nm to 100 nm; The material of the top electrode layer includes at least one of titanium nitride, tungsten, gold, and ruthenium; The thickness of the top electrode layer ranges from 20 nm to 40 nm; and The substrate layer is made of doped silicon.
4. A method for performance regulation of hafnium-based ferroelectric devices, comprising: Deposit a bottom electrode layer on the substrate; A hafnium-based ferroelectric thin film is deposited on the bottom electrode layer; A top electrode layer is deposited on the hafnium-based ferroelectric thin film to obtain an intermediate device; as well as The intermediate device is subjected to rapid annealing to obtain a hafnium-based ferroelectric device; By irradiating the hafnium-based ferroelectric device with a particle beam, a t-phase structure is generated in the hafnium-based ferroelectric thin film based on the synergistic effect of ionizing radiation and displacement radiation, thereby reducing the coercive electric field strength parameter of the hafnium-based ferroelectric thin film in the hafnium-based ferroelectric device and obtaining the target hafnium-based ferroelectric device with tunable performance. The coercive electric field strength parameter includes 1.30 MV / cm. The particle beam includes a proton beam; The irradiation energy range of the proton beam is 1×10⁻⁶. -1 keV ~1×50MeV; The proton beam has a particle fluence rate ranging from 1 × 10⁻⁶. 7 p / cm 2 / s~1×10 16 p / cm 2 / s.
5. The method according to claim 4, wherein, The method of irradiating the hafnium-based ferroelectric device with a particle beam to adjust the coercive electric field strength parameter of the hafnium-based ferroelectric thin film in the hafnium-based ferroelectric device, thereby obtaining the target hafnium-based ferroelectric device with regulated performance, includes: The coercive electric field strength parameters are adjusted by irradiating the hafnium-based ferroelectric device with a particle beam to regulate the charge state and oxygen vacancy concentration of the intrinsic oxygen vacancies in the hafnium-based ferroelectric thin film.
6. The method according to claim 4, wherein, The irradiation angle of the particle beam ranges from 5° to 90°.
7. The method according to claim 4, wherein, The process of rapidly annealing the intermediate device to obtain a hafnium-based ferroelectric device includes: The intermediate device is subjected to rapid annealing, with an annealing time ranging from 10 s to 60 s and a heating temperature ranging from 300℃ to 700℃.