Semiconductor manufacturing apparatus, semiconductor device manufacturing method, and semiconductor device

Abstract

The invention relates to a semiconductor manufacturing apparatus, a semiconductor device manufacturing method and a semiconductor device. The purpose of the present invention is to provide a semiconductor manufacturing apparatus capable of expanding the application of a resin paste to a quadrilateral shape. A nozzle (3) of a semiconductor manufacturing apparatus (100) has a cross-shaped groove (12) provided in a bottom surface (17), a supply hole (11) provided in the center of the cross-shaped groove (12), and an exhaust groove (13) that extends from each tip (14) of the cross-shaped groove (12) to the outside of the bottom surface (17) on the bottom surface (17) and is shallower than the cross-shaped groove (12). A semiconductor manufacturing apparatus (100) is provided with: a nozzle (3); the injector (2) is connected with the nozzle (3); and a dispensing device (1) that fills the cross recess (12) with the resin paste (6) within the syringe (2) by gas pressure or air pressure through the supply hole (11).

Description

Technical Field

[0001] The present invention relates to a semiconductor manufacturing device, a method for manufacturing a semiconductor device, and a semiconductor device. Background Art

[0002] Patent document 1 discloses a semiconductor manufacturing device having a nozzle with a cross groove on the bottom surface. The resin paste is in the shape of a cross when it is just ejected, and the resin paste at the center of the cross spreads isotropically from there. On the other hand, the resin paste at each end of the cross hardly spreads but remains stationary. Therefore, as a result, the resin paste is applied and spread into a quadrilateral. Since most of the semiconductor elements bonded in the subsequent process are quadrilaterals when viewed from above, the device of patent document 1 has the advantage of being able to apply the resin paste in a manner along the shape of the bonded semiconductor elements.

[0003] Patent Document 1: Japanese Patent Application Laid-Open No. 02-288241

[0004] When filling the cross groove with resin paste, the air discharged from the dispenser is discharged from the center of the cross groove to the end. At this time, the resin paste to be filled and the air overflow from the end of the cross groove. As a result, the applied and spread resin paste becomes an unexpected shape. Summary of the invention

[0005] The present invention is made to solve the above-mentioned problems, and a first object of the present invention is to provide a semiconductor manufacturing apparatus capable of extending the application of resin paste into a quadrilateral.

[0006] In addition, a second object of the present invention is to provide a method for manufacturing a semiconductor device capable of extending the application of a resin paste into a quadrilateral.

[0007] In addition, a third object of the present invention is to provide a semiconductor device capable of extending the resin paste coating into a quadrilateral.

[0008] A first aspect of the present invention is preferably a semiconductor manufacturing apparatus comprising:

[0009] A nozzle having a cross groove provided on a bottom surface, a supply hole provided at a center of the cross groove, and an exhaust groove extending from each end portion of the cross groove on the bottom surface to outside the bottom surface and being shallower than the cross groove;

[0010] a syringe containing resin paste and connected to the nozzle; and

[0011] A dispenser is configured to fill the resin paste in the syringe into the cross groove by gas pressure or air pressure through the supply hole.

[0012] In addition, a second embodiment is preferably a method for manufacturing a semiconductor device, comprising the following steps:

[0013] A nozzle having a cross groove provided on the bottom surface, a supply hole provided at the center of the cross groove, and an exhaust groove extending from each end portion of the cross groove to outside the bottom surface and shallower than the cross groove is placed in contact with the object to be coated;

[0014] Filling the resin paste from the supply hole into the cross groove by gas pressure or air pressure;

[0015] moving the nozzle away from the object to be coated, and spraying the resin paste in a cross shape onto the object to be coated; and

[0016] The semiconductor element having a quadrilateral shape in plan view is bonded so that the vertices of the quadrilateral coincide with the end of the cross of the resin paste ejected in the cross shape.

[0017] In addition, a third embodiment is preferably a method for manufacturing a semiconductor device, comprising the following steps:

[0018] spraying the resin paste to a range including the center but not including the end of the cross-shaped block formed on the die pad; and

[0019] A semiconductor element having a quadrilateral shape in plan view is placed on the upper surface of the block so that each vertex of the quadrilateral coincides with each end portion of the cross of the block, and the die pad and the semiconductor element are bonded to each other by the resin paste.

[0020] In addition, a fourth embodiment is preferably a method for manufacturing a semiconductor device, comprising the following steps:

[0021] forming a die pad having four grooves extending along respective sides of a quadrilateral on an upper surface;

[0022] Spraying the resin paste to a range including the center of the quadrilateral formed by the four grooves but not including the four grooves;

[0023] A semiconductor element having a quadrilateral shape when viewed from above is placed on the upper surface of the chip pad in such a manner that the vertices of the quadrilateral formed by the semiconductor element coincide with the vertices of the quadrilateral formed by the four grooves, and the chip pad and the semiconductor element are bonded together by the resin paste.

[0024] The four grooves are present at the center of the side portion of the bonded semiconductor element in a plan view, and are not present at both ends of the side portion of the semiconductor element.

[0025] Furthermore, a fifth aspect is preferably a semiconductor device including:

[0026] a chip pad having a cross-shaped block on an upper surface; and

[0027] a semiconductor element bonded to the block by a resin paste,

[0028] The semiconductor element has a quadrilateral shape in a plan view, and is bonded so that each vertex of the quadrilateral of the semiconductor element coincides with an end portion of a cross of the block.

[0029] Furthermore, a sixth aspect is preferably a semiconductor device including:

[0030] Chip pads; and

[0031] A semiconductor element is bonded to the chip pad by a resin paste, and the four sides are quadrilateral when viewed from above.

[0032] The die pad has four grooves extending along each of the side portions on the surface to which the semiconductor element is bonded.

[0033] The groove exists at the center of the side portion in a plan view, and does not exist at both ends of the side portion.

[0034] Effects of the Invention

[0035] According to the first and second embodiments of the present invention, a cross groove and exhaust grooves extending from each end of the cross groove to the outside of the bottom surface are formed on the bottom surface of the nozzle. The exhaust groove is a groove shallower than the cross groove. Thus, while filling the cross groove with resin paste, only the air from the supply hole can be discharged to the outside of the nozzle through the exhaust groove. Thus, a semiconductor manufacturing device and a semiconductor device manufacturing method that can expand the resin paste coating into a quadrilateral can be provided.

[0036] In addition, according to the third and fifth embodiments, a cross-shaped block is formed on the upper surface of the chip pad. The resin paste is sprayed to a range including the center of the block but not including the end portion, and a semiconductor element is placed from above, thereby enabling the resin paste to selectively penetrate into the gap formed by the upper surface of the block and the semiconductor element. Thus, a semiconductor device and a method for manufacturing a semiconductor device in which the resin paste coating can be extended to a quadrilateral can be provided.

[0037] In addition, according to the fourth and sixth embodiments, the chip pad has four grooves extending along each of the side portions of the semiconductor element when viewed from above. In addition, the groove is configured to exist in the center of the side portion but not at both ends when viewed from above. By forming the groove, the movement of the resin paste in the groove direction can be delayed. Thus, a semiconductor device and a method for manufacturing a semiconductor device in which the resin paste coating can be extended to a quadrilateral can be provided. BRIEF DESCRIPTION OF THE DRAWINGS

[0038] Figure 1It is a diagram showing a semiconductor manufacturing apparatus according to Embodiment 1 of the present invention.

[0039] Figure 2 This is a diagram showing the bottom surface of the nozzle of the semiconductor manufacturing apparatus according to the first embodiment of the present invention.

[0040] Figure 3 yes Figure 2 A-A' cross-sectional view of the nozzle.

[0041] Figure 4 This is a diagram showing the bottom surface of a nozzle according to Embodiment 2 of the present invention.

[0042] Figure 5 yes Figure 4 A-A' cross-sectional view of the nozzle.

[0043] Figure 6 It is a top view of a die pad according to Embodiment 3 of the present invention.

[0044] Figure 7 yes Figure 6 Side view of the die pad.

[0045] Figure 8 It is a side view of a semiconductor device according to Embodiment 3 of the present invention.

[0046] Fig. 9 It is a diagram showing a method for manufacturing a semiconductor device according to a third embodiment of the present invention.

[0047] Fig.10 It is a diagram showing a method for manufacturing a semiconductor device according to a third embodiment of the present invention.

[0048] Fig.11 It is a diagram showing a method for manufacturing a semiconductor device according to a third embodiment of the present invention.

[0049] Fig.12 It is a top view of a die pad according to a fourth embodiment of the present invention.

[0050] Fig.13 yes Fig.12 A-A' cross-sectional view of the chip pad.

[0051] Fig.14 It is a side view of a semiconductor device according to a fourth embodiment of the present invention.

[0052] Fig.15 It is a diagram showing a method for manufacturing a semiconductor device according to a fourth embodiment of the present invention.

[0053] Fig.16 It is a diagram showing a method for manufacturing a semiconductor device according to a fourth embodiment of the present invention.

[0054] Fig.17 It is a diagram showing a method for manufacturing a semiconductor device according to a fourth embodiment of the present invention. DETAILED DESCRIPTION

[0055] Embodiments of the present invention will be described with reference to the accompanying drawings. The same reference numerals are used for the same or corresponding components, and repeated description may be omitted.

[0056] Implementation Method 1

[0057] Figure 1 1 is a diagram showing a semiconductor manufacturing apparatus 100 according to the first embodiment of the present invention. The semiconductor manufacturing apparatus 100 includes a dispenser 1 , a syringe 2 containing a resin paste 6 , a nozzle 3 connected to the syringe 2 , and an elevator 4 .

[0058] The nozzle 3 ejects the resin paste 6 filled from the syringe 2. The nozzle 3 has a base portion 7 and a tip portion 8 formed in the center of the base portion 7. A cross groove 12 is provided on the bottom surface 17 of the tip portion 8. The detailed structure of the nozzle 3 will be described later.

[0059] The dispenser 1 is a gas pressure or air pressure type discharge device that fills the resin paste 6 in the syringe 2 into the cross groove 12 through the supply hole 11 .

[0060] The lifter 4 lifts and lowers the syringe 2 and the nozzle 3 automatically or manually.

[0061] The bonding method of the semiconductor element 50 using the semiconductor manufacturing device 100 of the present invention is as follows. First, the bottom surface 17 of the top end portion 8 is brought into contact with the object to be coated, such as the chip pad 5, by the lifter 4. Then, the resin paste 6 is filled into the cross groove 12 from the supply hole 11 by the dispenser 1. Then, the nozzle 3 is separated from the object to be coated by the lifter 4. Thus, the cross-shaped resin paste 6 is applied to the object to be coated. Then, the semiconductor element 50, which is a quadrilateral when viewed from above, is bonded in such a way that the vertices of the quadrilateral formed by the semiconductor element are consistent with the end portion of the cross of the resin paste 6 ejected in the shape of a cross. Thus, the semiconductor element 50 can be bonded.

[0062] Figure 2 1 is a diagram showing the bottom surface 17 of the tip portion 8 of the nozzle 3 according to the first embodiment of the present invention. Figure 3 yes Figure 2 In order to explain the state in which the bottom surface 17 is in contact with the chip pad 5, Figure 3 Shown in Figure 2 There is no chip pad 5.

[0063] like Figure 2As shown, the bottom surface 18 of the base portion 7 is circular. In addition, the bottom surface 17 of the tip portion 8 is a square with rounded corners.

[0064] The supply hole 11 is provided at the center of the cross groove 12 on the bottom surface 17 of the tip portion 8 , and leads to the syringe 2 through the tip portion 8 and the base portion 7 .

[0065] The size of the cross groove 12 when viewed from above is about the same as the size of the semiconductor element 50 bonded in the subsequent process when viewed from above. The cross groove 12 is formed on the diagonal line of the square formed by the bottom surface 17 of the top end portion 8. In addition, the width of the cross groove 12 becomes narrower from the center toward the end. Thus, the resin paste 6 supplied from the supply hole 11 can reach the end portion 14 without overflowing.

[0066] The exhaust groove 13 extends from each terminal portion 14 of the cross groove 12 along the extending direction of the cross groove 12 at the bottom surface 17 of the top end portion 8 to the outside of the bottom surface 17. That is, the exhaust groove 13 exists on the diagonal line of the square formed by the bottom surface 17 of the top end portion 8. The exhaust groove 13 is a groove narrower and shallower than the cross groove 12.

[0067] By providing the exhaust groove 13, Figure 3 As shown, even in a state where the bottom surface 17 of the tip portion 8 is in contact with the die pad 5 , a gap for exhausting air can be formed between the bottom surface 17 and the die pad 5 .

[0068] In addition, since the exhaust groove 13 is shallower than the cross groove 12, the resin paste 6 filled in the cross groove 12 does not intrude into the exhaust groove 13. That is, in this embodiment, the resin paste 6 can be filled in the cross groove 12 while only the air from the supply hole 11 is discharged to the outside through the exhaust groove 13. Therefore, as in the prior art, the resin paste 6 can be prevented from overflowing from the terminal portion 14 of the cross groove 12 together with the air. In addition, the generation of air pockets (air accumulation) in the cross groove 12 can be suppressed, and the generation of bubbles in the resin paste 6 can be prevented. As a result, the resin paste 6 can be applied and expanded into a quadrilateral.

[0069] In addition, it has been described that the corners through which the exhaust grooves 13 penetrate at the bottom surface 17 of the top end portion 8 are R-chamfered. Here, assuming that the corners are not chamfered, it should be noted that metal powder from the chip pad 5 may be generated due to the contact between the sharp corners and the chip pad 5. In this case, there is a concern that poor bonding may be caused by the metal powder adhering to the resin paste 6 in the cross groove 12 through the exhaust grooves 13. In this embodiment, by performing R-chamfering on the corners, such metal powder is prevented from being generated, and bonding defects are prevented from occurring.

[0070] As described above, in this embodiment, the cross groove 12 and the exhaust groove 13 extending from each end portion 14 of the cross groove 12 to the outside of the bottom surface 17 are formed on the bottom surface 17 of the nozzle 3. The exhaust groove 13 is a groove narrower and shallower than the cross groove 12. Thus, while the resin paste 6 is filled in the cross groove 12, only the air from the supply hole 11 can be discharged to the outside of the nozzle through the exhaust groove 13. Thus, a semiconductor manufacturing device and a semiconductor device manufacturing method that can expand the resin paste coating into a quadrilateral can be provided.

[0071] <Variation of Implementation Example 1>

[0072] In addition, the bottom surface 17 of the top end portion 8 is described above as a square with R chamfered corners. However, as long as the above-mentioned cross groove 12 and exhaust groove 13 are formed, the shape of the bottom surface 17 is not limited, and it can also be a circle, for example. In addition, the lengths of the exhaust grooves 13 extending from the respective terminal portions 14 of the cross groove 12 to the outside of the bottom surface 17 can also be different according to the shape of the bottom surface 17. In this case, the same effect as above can be obtained.

[0073] Implementation Method 2

[0074] In this embodiment, the pins 15 are arranged around the bottom surface 17. In addition, the changes from the first embodiment will be described below. Figure 4 2 is a diagram showing the bottom surface of the nozzle 3 of the semiconductor manufacturing apparatus 100 according to the second embodiment of the present invention. Figure 5 yes Figure 4 A-A' cross-sectional view of the nozzle 3. In addition, Figure 5 Shown in Figure 4 There is no chip pad 5.

[0075] The pin 15 which is 40 to 100 μm higher than the tip portion 8 is arranged on the bottom surface 18 of the base portion 7. In addition, the pin 15 is arranged around the tip portion 8 here, but the number of the pin 15 may be one.

[0076] By configuring greater than or equal to 1 pin 15, such as Figure 5 As shown, the die pad 5 does not abut against the bottom surface 17 of the tip portion 8, and a gap corresponding to the height of the pin 15 is generated between the two. The size of the gap is as large as 40 to 100 μm, so that in this state, the resin paste 6 ejected from the nozzle 3 is partially adsorbed on the die pad 5, and the remaining part is adsorbed on the side of the nozzle 3. By utilizing the adsorption phenomenon of the resin paste 6 on the side of the nozzle 3, the ejection time can be shortened.

[0077] As described above, in the semiconductor manufacturing apparatus 100 of the present embodiment, in addition to the effects described in the first embodiment, the discharge time can be shortened.

[0078] <Variation of Implementation Example 2>

[0079] In addition, the above description describes the case where the rod-shaped pin 15 is arranged on the bottom surface 18 of the base portion 7. However, the shape and arrangement position of the pin 15 are not limited to this. For example, an L-shaped pin may be arranged on the side of the top portion 8 so that it protrudes from the bottom surface 17. Alternatively, a pin may be arranged on the bottom surface 17 of the top portion 8 itself, or other structures may be used. In this case, the same effect as described above can be obtained.

[0080] Implementation 3

[0081] In the above embodiments, the technique of applying the resin paste 6 in a quadrilateral shape by improving the nozzle 3 of the semiconductor manufacturing apparatus 100 is described. In the present embodiment, on the other hand, the technique of applying the resin paste 6 in a quadrilateral shape by improving the die pad of the semiconductor device is described.

[0082] Figure 6 3 is a top view of a die pad 30 according to Embodiment 3 of the present invention. Figure 7 yes Figure 6 3 is a side view of a die pad 30. The die pad 30 has a cross-shaped block 32 on the upper surface 31. The size of the block 32 when viewed from above is about the same as the size of the semiconductor element 50 bonded in a subsequent step when viewed from above.

[0083] Figure 8 1 is a side view of a semiconductor device 200 according to Embodiment 3 of the present invention. The semiconductor device 200 includes a die pad 30 and a semiconductor element 50 bonded to a block 32 of the die pad 30 by a resin paste 6. The semiconductor element 50 is a quadrilateral when viewed from above, and is bonded so that each vertex of the quadrilateral coincides with each end portion 33 of the cross of the block 32.

[0084] observe Figure 8 It can be seen that the first gap 51 formed by the upper surface 34 of the block 32 and the semiconductor element 50 is narrower than the second gap 52 formed by the upper surface 31 of the die pad 30 and the semiconductor element 50. In the manufacture of the semiconductor device 200, the resin paste 6 is sprayed near the center of the cross-shaped block 32, and the semiconductor element 50 is placed from above. By making the first gap 51 narrower than the second gap 52, the resin paste 6 selectively penetrates into the first gap 51. In more detail, the resin paste 6 also spreads isotropically through the second gap 52, but spreads to each end portion 33 of the block 32 through the first gap 51 earlier than the second gap 52. As a result, the resin paste 6 can be applied and spread into a quadrilateral.

[0085] Figures 9 to 111 is a diagram showing a method for manufacturing a semiconductor device 200 according to a third embodiment of the present invention. Here, a top view of the semiconductor device 200 is shown. First, Fig. 9 As shown, the resin paste 6 is sprayed onto a range of the block 32 of the die pad 30 that includes the center of the cross but does not include the end portion 33 .

[0086] Then, if Fig.10 As shown in FIG. 1 , a semiconductor element 50 having a quadrilateral shape when viewed from above is placed on the upper surface 34 of the block 32 and the die pad 30 and the semiconductor element 50 are bonded together by the resin paste 6. At this time, the vertices of the quadrilateral formed by the semiconductor element 50 are aligned with the end portions 33 of the block 32. Thus, the selective penetration phenomenon of the resin paste 6 can be utilized. As a result, Fig.11 As shown, the semiconductor device 200 in which the resin paste 6 is applied and expanded into a quadrilateral shape is obtained.

[0087] As described above, in this embodiment, a cross-shaped block 32 is formed on the upper surface 31 of the die pad 30. The resin paste 6 is sprayed to a range including the center of the block 32 but not including the end portion 33, and the semiconductor element 50 is placed from above, so that the resin paste 6 can selectively penetrate into the gap formed by the upper surface 34 of the block 32 and the semiconductor element 50. Thus, the semiconductor device 200 in which the resin paste 6 can be applied and expanded into a quadrilateral and the manufacturing method of the semiconductor device 200 can be provided.

[0088] Implementation 4

[0089] In this embodiment, a technique of improving the shape of the die pad and applying the resin paste 6 to expand it into a quadrilateral will also be described.

[0090] Fig.12 : is a top view of the die pad 40 according to the fourth embodiment of the present invention. Fig.13 yes Fig.12 The chip pad 40 is a cross-sectional view taken along the line AA' of FIG. The chip pad 40 has four grooves 43 extending along the sides of the square 42 on the upper surface 41. In addition, Fig.12 The square 42 is a virtual figure provided for explanation, and is not actually formed on the upper surface of the die pad 40. In addition, the square 42 formed by the four grooves 43 when viewed from above is the same size as the semiconductor element 50 bonded in the subsequent process when viewed from above.

[0091] In a plan view, the four grooves 43 are respectively present at the center of the side of the square 42 and not at both ends. Specifically, it is preferable that the length of the four grooves 43 is about half of the side of the square 42.

[0092] In addition, it is preferable that the four grooves 43 are formed at positions equidistant from both ends of the side.

[0093] Fig.14 1 is a side view of a semiconductor device 300 according to Embodiment 4 of the present invention. The semiconductor device 300 includes a semiconductor element 50 having four side portions 53 that are quadrilateral in a plan view, and a die pad 40 to which the semiconductor element 50 is bonded on an upper surface 41 by a resin paste 6. The semiconductor element 50 is bonded in such a manner that the vertices of the quadrilateral formed by the semiconductor element 50 coincide with the vertices of the square 42 formed by the four grooves.

[0094] Figures 15 to 17 FIG. 4 is a diagram showing a method for manufacturing a semiconductor device 300 according to a fourth embodiment of the present invention. Fig.15 As shown, the resin paste 6 is sprayed onto a range of the die pad 40 that includes the center of the square 42 formed by the groove 43 but does not include the groove 43 .

[0095] Next, a semiconductor element 50 having a quadrilateral shape when viewed from above is placed on the sprayed resin paste 6, and the die pad 40 and the semiconductor element 50 are bonded together by the resin paste 6. At this time, the orientation of the quadrilateral formed by the semiconductor element 50 is consistent with the orientation of the square 42 formed by the groove 43. Since the resin paste 6 spreads isotropically, Fig.16 As shown in FIG. 1 , the resin paste 6 first arrives in the direction of the groove 43 above the square 42. However, the resin paste 6 that has arrived flows into the groove 43, thereby delaying further progress. On the other hand, since there is no groove 43 in the direction of the resin paste 6 moving toward the vertex of the square 42, as a result, Fig.17 As shown, a semiconductor device 300 in which the resin paste 6 is applied and expanded into a quadrilateral is obtained.

[0096] As described above, the square 42 formed by the four grooves 43 formed on the upper surface 41 of the die pad 40 has the same size as the semiconductor element 50 when viewed from above. Fig.17 In the top view of the semiconductor device 300 shown, the four grooves 43 extend along each of the side portions 53 of the semiconductor element 50. In addition, the grooves 43 exist in the center of the side portion 53 but not at both ends when viewed from above, and are formed at positions that are equal from both ends of the side portion 53. In addition, since the resin paste 6 flows only into the center portion of the side toward the square 42, the length of the groove 43 is preferably half the length of the side portion 53. In addition, it is preferred that the four grooves 43 are formed at positions that are equal from both ends of the side portion 53.

[0097] As described above, the die pad 40 of the present embodiment has four grooves 43 extending along each of the side portions 53 of the semiconductor element 50 when viewed from above. In addition, the grooves 43 are configured to exist in the center of the side portion 53 but not at both ends when viewed from above. By forming the grooves 43, the movement of the resin paste 6 in the direction of the grooves 43 can be delayed. Thus, the semiconductor device 300 and the method for manufacturing the semiconductor device 300 can be provided in which the resin paste 6 can be applied and spread into a quadrilateral.

[0098] In addition, the present invention is not limited to the above-mentioned embodiment, and various modifications can be made in the implementation stage without departing from the scope of the gist thereof. In addition, each embodiment can be combined and implemented as appropriate, and in this case, the effect of the combination is obtained.

[0099] Furthermore, the quadrilateral in the present invention includes a square and a substantially square.

[0100] Description of the label

[0101] 1 Dispenser

[0102] 2 Syringes

[0103] 3 Nozzles

[0104] 4. Elevator

[0105] 5 Chip pad

[0106] 6 Resin paste

[0107] 7 Base

[0108] 8 Top

[0109] 11 Supply hole

[0110] 12 Cross slot

[0111] 13 Exhaust slot

[0112] 14 terminal part

[0113] 15 Pins

[0114] 17 Bottom

[0115] 18 Bottom

[0116] 30 Chip pad

[0117] 31 Upper surface

[0118] 32 blocks

[0119] 33 terminal part

[0120] 34 Upper surface

[0121] 40 Chip pad

[0122] 41 Upper surface

[0123] 42 Square

[0124] 43 slots

[0125] 50 Semiconductor components

[0126] 51 First Gap

[0127] 52 Second Gap

[0128] 53 Side

[0129] 100 Semiconductor manufacturing equipment

[0130] 200 Semiconductor devices

[0131] 300Semiconductor devices

Claims

1. A semiconductor manufacturing device comprising: A nozzle having a cross groove provided on a bottom surface, a supply hole provided at a center of the cross groove, and an exhaust groove extending from each end portion of the cross groove on the bottom surface to outside the bottom surface and being shallower than the cross groove; a syringe containing resin paste and connected to the nozzle; and A dispenser is configured to fill the resin paste in the syringe into the cross groove by gas pressure or air pressure through the supply hole.

2. The semiconductor manufacturing apparatus according to claim 1, wherein: The bottom surface is a quadrilateral with R chamfered corners. The cross groove and the exhaust groove are formed on the diagonal lines of the quadrilateral.

3. The semiconductor manufacturing apparatus according to claim 1 or 2, wherein: The nozzle has pins protruding from the periphery of the bottom surface or the bottom surface, and the pins protrude from the bottom surface by 40 to 100 μm.

4. A method for manufacturing a semiconductor device, comprising the following steps: A nozzle having a cross groove provided on the bottom surface, a supply hole provided at the center of the cross groove, and an exhaust groove extending from each end portion of the cross groove to outside the bottom surface and shallower than the cross groove is placed in contact with the object to be coated; Filling the resin paste from the supply hole into the cross groove by gas pressure or air pressure; The nozzle is moved away from the object to be coated, and the resin paste is sprayed onto the object in a cross shape; as well as The semiconductor element having a quadrilateral shape in plan view is bonded so that the vertices of the quadrilateral coincide with the end of the cross of the resin paste ejected in the cross shape.

5. A method for manufacturing a semiconductor device, comprising the following steps: spraying the resin paste to a range including the center but not including the end of the cross-shaped block formed on the die pad; and A semiconductor element having a quadrilateral shape in plan view is placed on the upper surface of the block so that each vertex of the quadrilateral coincides with each end portion of the cross of the block, and the die pad and the semiconductor element are bonded to each other by the resin paste.

6. A method for manufacturing a semiconductor device, comprising the following steps: forming a die pad having four grooves extending along respective sides of a quadrilateral on an upper surface; Spraying the resin paste to a range including the center of the quadrilateral formed by the four grooves but not including the four grooves; A semiconductor element having a quadrilateral shape when viewed from above is placed on the upper surface of the chip pad in such a manner that the vertices of the quadrilateral formed by the semiconductor element coincide with the vertices of the quadrilateral formed by the four grooves, and the chip pad and the semiconductor element are bonded together by the resin paste. The four grooves are present at the center of the side portion of the bonded semiconductor element in a plan view, and are not present at both ends of the side portion of the semiconductor element.

7. A semiconductor device comprising: a chip pad having a cross-shaped block on an upper surface; and a semiconductor element bonded to the block by a resin paste, The semiconductor element has a quadrilateral shape in a plan view, and is bonded so that each vertex of the quadrilateral of the semiconductor element coincides with an end portion of a cross of the block.

8. A semiconductor device comprising: chip pads; and A semiconductor element is bonded to the chip pad by a resin paste, and the four sides are quadrilateral when viewed from above. The die pad has four grooves extending along each of the side portions on the surface to which the semiconductor element is bonded. The groove exists at the center of the side portion in a plan view, and does not exist at both ends of the side portion.

9. The semiconductor device according to claim 8, wherein: The length of the groove is half the length of the side portion, The grooves are formed at positions equidistant from both ends of the side portion.

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