Basic mask, target mask, preparation method of basic mask and preparation method of target mask, and preparation method of display panel

Abstract

The embodiment of the invention provides a basic mask, a target mask, preparation methods of the basic mask and the target mask, and a preparation method of a display panel. The base mask plate comprises a first substrate; the first mask layer is located on one side of the first substrate, at least one hollow-out pattern is formed in the first mask layer, and the hollow-out pattern is used for exposing a selected area when the hollow-out pattern is selected for use so as to prepare a corresponding mask pattern on a target mask plate and is shielded when the hollow-out pattern is not selected for use; the selected area is at least partial area of the selected hollow pattern. The basic mask plate disclosed by the invention is not limited by the specification of the target mask plate any more, and can be used for preparing target mask plates of various specifications, so that the cost of the mask plate is reduced.

Description

Technical Field

[0001] The present disclosure relates to the field of display technology, and in particular to a basic mask, a target mask and a preparation method, and a display panel preparation method. Background Art

[0002] With the continuous development of liquid crystal display, liquid crystal display panels are widely used in electronic devices such as computers, televisions, mobile phones, and car displays due to their advantages of being light, thin, and energy-saving. Liquid crystal display panels include an array substrate and a color film substrate that are aligned. A sealant is provided between the array substrate and the color film substrate. The sealant is cured by ultraviolet light irradiation, and then the array substrate and the color film substrate are adhered together to form a liquid crystal display panel.

[0003] In the prior art, the curing cost of the frame glue is relatively high, which is not conducive to improving the competitiveness of the product. Summary of the invention

[0004] The embodiments of the present disclosure provide a basic mask, a target mask and a preparation method, and a display panel preparation method to solve or alleviate one or more technical problems in the prior art.

[0005] As a first aspect of an embodiment of the present disclosure, an embodiment of the present disclosure provides a basic mask, including:

[0006] a first substrate;

[0007] The first mask layer is located on one side of the first substrate. The first mask layer is provided with at least one hollow pattern. The hollow pattern is used to expose a selected area when it is selected for use to prepare a corresponding mask pattern on a target mask plate, and is blocked when it is not selected for use. The selected area is at least a portion of the hollow pattern selected for use.

[0008] In one embodiment, the hollow pattern includes a positioning hollow, the positioning hollow includes a first hollow and a marking pattern, the orthographic projection of the marking pattern on the first substrate is located within the orthographic projection of the first hollow on the first substrate, and the positioning hollow is used to prepare a positioning mark corresponding to the marking pattern on the target mask when it is selected for use.

[0009] In one embodiment, at least two marking patterns are disposed in the first hollow, and the positioning hollow is used to expose a region containing a different marking pattern each time when it is selected for use multiple times, so as to prepare multiple positioning marks on the target mask.

[0010] In one embodiment, there are multiple positioning hollows, and the multiple positioning hollows are arranged in sequence along a first preset direction. In the first preset direction, the extension directions of two adjacent first hollows intersect, and the extension directions of multiple first hollows can intersect in sequence to enclose a closed area.

[0011] In one embodiment, the hollow pattern further includes a second hollow, and the second hollow is used to form at least a portion of an edge of the first mask pattern on the target mask when the second hollow is selected for use.

[0012] In one embodiment, there are multiple second hollowings, and the multiple second hollowings are arranged in sequence along a second preset direction. In the second preset direction, the extension directions of two adjacent second hollowings intersect, and the multiple second hollowings are used to be selected and used respectively to prepare a first mask pattern on the target mask.

[0013] In one embodiment, the width of the second hollow is 0.8 mm to 1.2 mm; or, the width of the second hollow is 2.5 mm to 3.5 mm.

[0014] In one embodiment, the hollow pattern also includes a third hollow, the third hollow includes a first sub-hollow and a second sub-hollow, the first sub-hollow and the second sub-hollow are intersected and connected, the inner boundaries of the first sub-hollow and the second sub-hollow are connected by rounded corners, and the third hollow is used to form a corner edge of the first mask pattern on the target mask plate when it is selected for use, and the corner edge of the first mask pattern is rounded.

[0015] In one embodiment, the radius of the rounded corner is 0.8 mm to 1.2 mm, or 2.5 mm to 3.5 mm, or 4.5 mm to 5.5 mm.

[0016] In one embodiment, the extension directions of the first sub-hollow and the second sub-hollow are perpendicular to each other, and the outer boundaries of the first sub-hollow and the second sub-hollow are connected at a right angle.

[0017] In one embodiment, there are multiple third hollowings, and the multiple third hollowings are arranged in sequence along the second preset direction. There are multiple second hollowings, and each second hollowing is located between two adjacent third hollowings in sequence along the second preset direction. The multiple second hollowings and the multiple third hollowings are selected and used in sequence to prepare a first mask pattern on the target mask.

[0018] In one embodiment, an extension direction of each hollow pattern is parallel to a corresponding edge of the first substrate.

[0019] As a second aspect of an embodiment of the present disclosure, an embodiment of the present disclosure provides a method for preparing a target mask, wherein the target mask includes a second substrate and a second mask layer located on one side of the second substrate, wherein the second mask layer includes a first mask pattern and a positioning mark, and the method includes:

[0020] Step 1: forming a second mask film on one side of a second substrate;

[0021] Step 2: coating a photoresist on a side of the second mask film facing away from the second substrate to form a photoresist film;

[0022] Step 3: Use the basic mask plate in any embodiment of the present disclosure as a mask to expose the selected area of ​​the target hollow pattern, block the area outside the selected area in the basic mask plate, and expose the photoresist film in the area to be exposed to remove the photoresist film and the second mask film in the area to be exposed, and the remaining second mask film forms a second mask layer; wherein, the area to be exposed is the area outside the second mask layer in the target mask plate, the target hollow pattern is selected from the hollow pattern of the basic mask plate, and the selected area is at least a part of the target hollow pattern.

[0023] In one embodiment, the hollow pattern includes a positioning hollow, the positioning hollow includes a first hollow and a marking pattern, the orthographic projection of the marking pattern on the first substrate is located within the orthographic projection of the first hollow on the first substrate, and the target hollow pattern includes a positioning hollow, and step 3 includes:

[0024] Step 31: Expose the first selected area of ​​the positioning hollowing, block the area outside the first selected area in the basic mask, and expose the photoresist film in the exposure area to form a first photoresist pattern corresponding to the marking pattern on the photoresist film.

[0025] In one embodiment, the hollow pattern includes the second hollow and / or the third hollow, the target hollow pattern includes the second hollow and / or the third hollow, and the target hollow pattern includes the second hollow and / or the third hollow, and step 3 includes:

[0026] Step 32: Expose the second selected area of ​​the second hollow and / or the third hollow, the boundary of the second selected area coincides with at least part of the edge of the first mask pattern, shield the area outside the second selected area in the basic mask plate, and expose the photoresist film in the exposure area to form a second photoresist pattern defined by the second hollow and / or the third hollow on the photoresist film, and the second photoresist pattern corresponds to the first mask pattern.

[0027] In one embodiment, step 3 further includes step 33, and step 33 includes:

[0028] Dividing the unexposed photoresist film in the area to be exposed into a plurality of sub-areas to be exposed according to the hollow pattern;

[0029] The third selected area of ​​the target hollow pattern corresponding to the sub-area to be exposed is exposed, the area outside the third selected area in the basic mask is shielded, and the photoresist film in the sub-area to be exposed is exposed.

[0030] In one embodiment, the size of the sub-area to be exposed is larger than a preset size, and step 3 further includes:

[0031] Step 34, using a baffle to block the area outside the sub-area to be exposed, the distance between the boundary of the baffle and the corresponding boundary of the sub-area to be exposed is greater than the exposure accuracy, and the area not blocked by the baffle is exposed.

[0032] As a third aspect of the embodiments of the present disclosure, the embodiments of the present disclosure provide a target mask plate, which is prepared by the method in any embodiment of the present disclosure, and the target mask plate includes a second substrate and a second mask layer located on the second substrate, and the second mask layer includes a positioning mark and a first mask pattern.

[0033] As a fourth aspect of the embodiments of the present disclosure, the embodiments of the present disclosure provide a method for preparing a display panel, wherein the display panel includes a first substrate and a second substrate arranged in a cell, an alignment mark is provided on the first substrate and / or the second substrate, the display panel includes a display area, and also includes a frame glue surrounding the display area and located between the first substrate and the second substrate, the method including:

[0034] The target mask in the embodiment of the present disclosure is arranged on one side of the display panel, so that the positioning mark of the target mask corresponds to the alignment mark, the display area is located within the orthographic projection of the first mask pattern on the display panel, and the orthographic projection of the first mask pattern on the display panel is located within the area defined by the sealant;

[0035] The target mask is used as a mask and the frame glue is cured by ultraviolet light.

[0036] The basic mask of the embodiment of the present disclosure can be used to prepare a target mask. When the basic mask of the embodiment of the present disclosure is used to prepare a target mask, a target hollow pattern can be selected from the hollow pattern of the basic mask. During the exposure process, the selected area of ​​the target hollow pattern is exposed, and the area outside the selected area in the basic mask is shielded, and the photoresist in the area to be exposed is exposed once. The exposure of the entire area to be exposed on the target mask can be achieved by multiple exposures and multiple exposure splicing, thereby preparing a target mask. The basic mask of the embodiment of the present disclosure is no longer limited by the mask pattern of the target mask, and can be used to prepare target masks of various specifications, expanding the application range of the basic mask. In actual development and production, it is no longer necessary to separately equip each specification of the display panel with an additional basic mask, which reduces the cost of the mask, reduces the development and production costs, and improves the timeliness of product development and product competitiveness.

[0037] The above summary is for illustrative purposes only and is not intended to be limiting in any way. In addition to the illustrative aspects, embodiments and features described above, further aspects, embodiments and features of the present disclosure will be readily apparent by reference to the accompanying drawings and the following detailed description. BRIEF DESCRIPTION OF THE DRAWINGS

[0038] In the accompanying drawings, unless otherwise specified, the same reference numerals throughout the multiple drawings represent the same or similar parts or elements. These drawings are not necessarily drawn to scale. It should be understood that these drawings only depict some embodiments according to the present disclosure and should not be regarded as limiting the scope of the present disclosure.

[0039] Figure 1 A schematic diagram of a substrate after being boxed;

[0040] Figure 2 For Figure 1 The corresponding target mask;

[0041] Figure 3 To adopt Figure 2 The target mask shown is Figure 1 Schematic diagram of curing the frame glue in FIG.

[0042] Figure 4 is a schematic diagram of a basic mask in an embodiment of the present disclosure;

[0043] Figure 5 A schematic plan view of a mask substrate;

[0044] Figure 6 for Figure 5 A schematic cross-sectional view of the mask substrate shown;

[0045] Figure 7 It is a schematic diagram of exposing the target mask using the positioning hollowing in the basic mask;

[0046] Figure 8 A schematic diagram of preparing a first mask pattern using a basic mask plate;

[0047] Fig. 9 A schematic diagram of exposure for preparing a plurality of first mask patterns using a basic mask plate;

[0048] Fig.10 To adopt Figure 4 A schematic diagram of a target mask prepared from the basic mask shown;

[0049] Fig.11 A schematic diagram of a third hollow shape in one embodiment;

[0050] Fig.12 is a schematic diagram of preparing a first mask pattern using a basic mask plate in another embodiment;

[0051] Fig.13 To adopt Figure 4 A schematic diagram of a target mask prepared from the basic mask shown;

[0052] Fig.14A schematic diagram of dividing an unexposed photoresist film;

[0053] Fig.15 A schematic diagram of shielding a sub-region to be exposed.

[0054] Description of reference numerals:

[0055] 21 / 22 / 31 / 32, second hollowing; 41 / 42, third hollowing; 06 / AA / AB / AC / AD, first mask pattern. DETAILED DESCRIPTION

[0056] In the following, only some exemplary embodiments are briefly described. As those skilled in the art will appreciate, the described embodiments may be modified in various ways without departing from the spirit or scope of the present disclosure, and different embodiments may be combined arbitrarily without conflict. Therefore, the drawings and descriptions are considered to be illustrative in nature and not restrictive.

[0057] In a liquid crystal display panel, when the display area is optically aligned, it is necessary to use ultraviolet light to irradiate the surface of the alignment film (e.g., polyimide film) so that the surface of the alignment film forms a fixed angle, thereby causing the liquid crystal molecules to form a pre-tilt angle. When the frame glue is cured, when ultraviolet light is used to irradiate the frame glue, in order to avoid the ultraviolet light affecting the alignment film, a target mask is needed to block the display area and expose the non-display area, so that the ultraviolet light can irradiate the frame glue during the frame glue curing process without irradiating the alignment film in the display area. For the sake of distinction, the mask used to block the display area when the frame glue is cured is referred to as the target mask in this disclosure.

[0058] Figure 1 Schematic diagram of a substrate after being boxed. Figure 1 As shown, the array substrate motherboard and the color filter substrate motherboard are arranged in a box, the array substrate motherboard is located on the upper side, and the color filter substrate motherboard is located on the lower side. Figure 1 03 , the boundary 04 of the array substrate, the boundary 04 of the color filter substrate, the sealant area 01 , the display area 02 , and the alignment mark 05 of a single liquid crystal display panel are shown. Figure 1 The sealant area in the middle is provided with uncured sealant.

[0059] Figure 2 For Figure 1 The corresponding target mask. Figure 2 As shown, the target mask includes a second substrate and a second mask layer located on the second substrate, and the second mask layer includes a first mask pattern 06 and positioning marks M1, M2, M3, and M4. The first mask pattern corresponds to the display area, and the positioning mark corresponds to the alignment mark. The material of the second mask layer can be metal, such as copper. The material of the second mask layer can also be other materials with light-shielding properties, which are not specifically limited here.

[0060] Figure 3 To adopt Figure 2 The target mask shown is Figure 1 Schematic diagram of curing the sealant in the Figure 3 As shown, during the alignment process, the target mask grabs the alignment marks on the substrate so that the positioning marks M1, M2, M3, M4 are aligned with the alignment marks 05A, 05B, 05C, 05D, so that the first mask pattern 06 covers the display area. The entire substrate is irradiated with ultraviolet light. Since the display area is covered by the first mask pattern 06, the ultraviolet light will not affect the alignment layer of the display area, and the ultraviolet light irradiates the sealant area to solidify the sealant.

[0061] In the related art, in order to prepare a target mask, a sealant mask corresponding to the target mask needs to be separately prepared, and a mask pattern is prepared on a metal layer using the sealant mask to form the target mask. When the product specifications are different, a sealant mask needs to be separately prepared, which increases the mask cost.

[0062] In order to reduce the cost of the mask for curing the sealant, the embodiment of the present disclosure provides a basic mask for preparing a target mask. The basic mask can be used to prepare target masks of different specifications and has wide versatility.

[0063] Figure 4 FIG. 1 is a schematic diagram of a basic mask in an embodiment of the present disclosure. Figure 4 As shown, the basic mask plate may include a first substrate and a first mask layer located on one side of the first substrate. The first mask layer is provided with at least one hollow pattern, and the hollow pattern is used to expose a selected area when it is selected for use to prepare a corresponding mask pattern on the target mask plate, and is blocked when it is not selected for use. In other words, the selected area of ​​the hollow pattern selected for use is exposed, and the area outside the selected area in the basic mask plate is blocked, and the hollow pattern is blocked when it is not selected for use. The selected area is at least a part of the hollow pattern selected for use.

[0064] Figure 5 is a plan view of a mask substrate. Figure 6 for Figure 5 The cross-sectional schematic diagram of the mask substrate shown in FIG. Figure 5 FIG. 1 shows the boundary of the positioning mark and the first mask pattern. Figure 2 Take the target mask shown as an example. Figure 2 The target mask shown can be used for curing the sealant. The target mask includes a second substrate 101 and a second mask layer located on one side of the second substrate 101, and the second mask layer includes a first mask pattern and a positioning mark.

[0065] like Figure 5 and Figure 6 As shown, the mask substrate 100 includes a second substrate 101 and a second mask film 102' located on one side of the second substrate 101. The basic mask of the embodiment of the present disclosure can be used as a mask to pattern the second mask film 102' of the mask substrate to form a second mask layer.

[0066] The area outside the second mask layer in the target mask can be called the area to be exposed. Figure 5 The dotted line in the figure shows the boundary of the second mask layer, and the area outside the second mask layer is the area to be exposed. In the mask substrate, there is a second mask film in the area to be exposed. When preparing the target mask, ultraviolet light is required to expose the area to be exposed to remove the photoresist and the second mask film in the area to be exposed.

[0067] The basic mask of the embodiment of the present disclosure can be used as a mask for preparing a target mask. A target hollow pattern can be selected from the hollow patterns of the basic mask, and during the exposure process, the selected area of ​​the target hollow pattern is exposed, and the area outside the selected area of ​​the basic mask is shielded, and the photoresist in the area to be exposed is exposed.

[0068] The photoresist film in the area to be exposed can be divided into a plurality of sub-areas to be exposed, and each sub-area to be exposed is exposed once. When exposing each sub-area to be exposed, a target hollow pattern corresponding to the sub-area to be exposed can be selected from the hollow pattern of the basic mask, thereby realizing exposure of the sub-area to be exposed.

[0069] Each sub-area to be exposed may be different, and the target hollow pattern corresponding to each sub-area to be exposed may be different. The sub-areas to be exposed that have been exposed multiple times are spliced ​​into an area to be exposed, thereby realizing exposure of the photoresist in the entire area to be exposed. The second mask film in the area to be exposed is removed by an etching process, and the remaining second mask film forms a second mask layer to prepare a target mask.

[0070] When the target mask is prepared by using the basic mask of the embodiment of the present disclosure, a target hollow pattern can be selected from the hollow patterns of the basic mask. During the exposure process, the selected area of ​​the target hollow pattern is exposed, and the area outside the selected area of ​​the basic mask is shielded, and the photoresist in the area to be exposed is exposed once. The entire area to be exposed on the target mask can be exposed by multiple exposures and splicing of multiple exposures, thereby preparing the target mask.

[0071] When the target mask is prepared by using the basic mask of the embodiment of the present disclosure, the entire area to be exposed on the target mask can be exposed by multiple exposures and multiple exposures splicing, thereby preparing the target mask. The substrate mask of the embodiment of the present disclosure can be used to prepare target masks of various specifications. The basic mask is no longer limited by the mask pattern of the target mask and can be used to prepare target masks of various specifications, expanding the application range of the basic mask. In actual development and production, it is no longer necessary to separately equip each specification of display panel with an additional basic mask, which reduces the cost of the mask, reduces the development and production costs, and improves the timeliness of product development and product competitiveness.

[0072] In one embodiment, the number of the hollow patterns may be one or more. In the present disclosure, "many" means greater than or equal to 2, for example, a plurality of means two or more. A plurality of hollow patterns may be different, for example, the shapes and / or sizes of the plurality of hollow patterns are different. A hollow pattern may be selected for use multiple times, and the hollow pattern selected for use each time may be the same or different. When the hollow pattern selected for use multiple times is the same, the selected area each time may be the same or different.

[0073] In order to improve the versatility of the hollow pattern, the hollow pattern can be strip-shaped hollow, which is conducive to hollow splicing and multiple exposure splicing of the area to be exposed.

[0074] During the exposure process, the target mask usually needs to be aligned, so positioning marks are usually provided on the target mask.

[0075] In one embodiment, Figure 4 As shown, the hollow pattern may include positioning hollows 11, Figure 4 Positioning cutouts 11a, 11b, 11c and 11d are shown. Positioning cutout 11 may include a first cutout and a marking pattern B, the orthographic projection of the marking pattern B on the first substrate being located within the orthographic projection of the first cutout on the first substrate. Positioning cutout 11 is used to prepare a positioning mark corresponding to the marking pattern B on a target mask when selected for use.

[0076] The shape of the first hollowing may be a strip. The marking pattern B may be set according to the positioning mark on the target mask, for example, the positioning mark is a circular ring, and the marking pattern may be a circular ring matching the positioning mark.

[0077] When preparing the positioning mark on the target mask, the positioning hollowing can be selected as the target hollowing pattern. During exposure, the first selected area of ​​the positioning hollowing can be exposed, and the area outside the first selected area in the base mask can be shielded, and the first selected area includes the marking pattern; the target mask is exposed using ultraviolet light. Thus, a first photoresist pattern corresponding to the marking pattern is formed in the photoresist film of the target mask.

[0078] In one embodiment, at least two marking patterns may be disposed in the first hollow. Figure 4 Two marking patterns B1 and B2 are arranged in one of the hollows. The positioning hollow is used to expose a region containing a different marking pattern each time when it is selected for multiple use, so as to prepare multiple positioning marks on the target mask.

[0079] In this way, a positioning hollow can prepare multiple positioning marks by selecting different areas for multiple times, which simplifies the positioning hollow structure on the basic mask plate and helps to reduce the cost of the basic mask plate.

[0080] like Figure 4 As shown, two marking patterns B1 and B2 are arranged in the first hollow of the positioning hollow 11d. In other embodiments, more marking patterns may be arranged in the first hollow.

[0081] Figure 7 Schematic diagram of the target mask after exposure using the positioning hollowing in the basic mask. Figure 7 As shown, since the distance between two adjacent positioning marks M1 and M2 on the target mask is different from the distance between two adjacent marking patterns B1 and B2 in the positioning hollow, in order to prepare multiple positioning marks, it is necessary to select the positioning hollow for multiple exposures, and multiple exposures are spliced ​​to form multiple first photoresist patterns. During each exposure, the first selected area of ​​the positioning hollow may be different.

[0082] For example, in Figure 7 In the first exposure, a portion of the area containing the positioning hollowed-out marking pattern B1 is selected for exposure to form a first photoresist pattern corresponding to the marking pattern B1; in the second exposure, a portion of the area containing the positioning hollowed-out marking pattern B2 is selected for exposure to form a first photoresist pattern corresponding to the marking pattern B2. The two first photoresist patterns formed by the two splicing correspond to the two positioning marks M1 and M2 respectively. It should be noted that, as Figure 7In the process of forming the positioning marks M1 and M2, redundant positioning marks are also formed between the positioning marks M1 and M2. Since the redundant positioning marks will not affect the curing of the frame glue, the redundant positioning marks between the positioning marks M1 and M2 can be retained. In the process of forming the positioning marks M1 and M2, only one corresponding marking pattern can be exposed and the other marking patterns can be shielded to avoid the formation of redundant positioning marks. For example, in the first exposure, the marking pattern B1 can be exposed and the marking pattern B2 can be shielded to avoid the formation of redundant positioning marks.

[0083] In one embodiment, Figure 4 As shown, there can be multiple positioning hollows, and multiple positioning hollows can be arranged in sequence along the first preset direction. In the first preset direction, the extension directions of two adjacent first hollows can intersect, and the extension directions of multiple first hollows can intersect in sequence to enclose a closed area.

[0084] With such a structure, the arrangement directions of the various positioning hollows are different. Therefore, when different positioning hollows are selected for use, they can be used to prepare positioning marks in different directions in the target mask, further expanding the application scope of the basic mask.

[0085] The extension directions of the multiple first hollowings are set to intersect in sequence to enclose a closed area. This method can make full use of the layout space of the basic mask plate to arrange more positioning hollowings in different directions, which can not only further expand the application scope of the basic mask plate, but also reserve more space for setting other hollowing patterns.

[0086] In one embodiment, the first preset direction may be a polygonal direction, and the number of positioning hollows may be the same as the number of sides of the polygon. The extension directions of the multiple first hollows in the multiple positioning hollows may be respectively parallel to the multiple sides of the polygon. For example, the polygon may be a quadrilateral, and the extension directions of the four first hollows in the four positioning hollows may be respectively parallel to the four sides of the quadrilateral.

[0087] Exemplarily, the first preset direction may be a circumferential direction of the first substrate. Figure 4 In the embodiment, the first preset direction may be a circumferential direction along the edge of the first substrate. The extending direction of the first hollowing in the positioning hollowing may be parallel to the corresponding edge of the first substrate. Figure 4 In the embodiment, there are four positioning hollows, namely positioning hollows 11a, 11b, 11c and 11d, and the extension directions of the first hollows of the four positioning hollows 11a, 11b, 11c and 11d are respectively parallel to the four edges of the first substrate.

[0088] like Figure 2As shown, positioning marks M1, M2, M3, and M4 are provided on the target mask. The positioning marks M1 and M2 can be prepared by exposure of positioning hollowing 11d, and the positioning marks M3 and M4 can be prepared by exposure of positioning hollowing 11b.

[0089] For example, during the first exposure, a portion of the positioning hollow 11d containing the marking pattern B1 is selected for exposure to form a first photoresist pattern E1 corresponding to the marking pattern B1; during the second exposure, a portion of the positioning hollow 11d containing the marking pattern B2 is selected for exposure to form a first photoresist pattern E2 corresponding to the marking pattern B2. The two first photoresist patterns E1 and E2 formed by the two splicing correspond to the two positioning marks M1 and M2 respectively. After the etching process, the second mask film covered by the first photoresist patterns E1 and E2 is retained to form the positioning marks M1 and M2.

[0090] During the third exposure, a portion of the positioning hollow 11b containing the mark pattern B3 is selected for exposure to form a first photoresist pattern E3 corresponding to the mark pattern B3; during the fourth exposure, a portion of the positioning hollow 11b containing the mark pattern B4 is selected for exposure to form a first photoresist pattern E4 corresponding to the mark pattern B4. The two first photoresist patterns E3 and E4 formed by the two splicing correspond to the two positioning marks M3 and M4 respectively. After the etching process, the second mask film covered by the first photoresist patterns E3 and E4 is retained to form the positioning marks M3 and M4.

[0091] In other embodiments, the first preset direction may also be a circular direction, etc. The extension direction of the first hollowing may be parallel to a tangent direction of the circular ring.

[0092] In one embodiment, Figure 4 As shown, the hollow pattern may further include a second hollow 21, and the second hollow 21 is used to form at least a portion of the edge of the first mask pattern on the target mask when selected for use. Figure 4 The second cutouts 21a, 21b, 21c, 21d are shown.

[0093] During the curing of the sealant, Figure 2 As shown, the first mask pattern in the target mask is usually a regular shape, such as a rectangle. The boundary of the second hollow 21 can be parallel to the partial boundary of the first mask pattern 06, so that when the selected area of ​​the second hollow 21 is selected for exposure, at least a partial edge of the first mask pattern 06 can be exposed. Therefore, the second hollow 21 can be used to expose at least a partial edge of the first mask pattern 06 of different sizes, so that the second hollow 21 can be applied to target masks of products of different specifications.

[0094] Exemplarily, the shape of the second hollowing 21 may be a strip-shaped hollowing, for example, the shape of the second hollowing is a quadrilateral strip-shaped hollowing.

[0095] In one embodiment, the number of the second hollowing 21 can be multiple. Figure 4 The second hollows 21a, 21b, 21c, and 21d are shown in FIG. The plurality of second hollows 21 are arranged in sequence along the second preset direction. In the second preset direction, the extension directions of two adjacent second hollows intersect, and the plurality of second hollows are used to be selected and used respectively, so as to prepare the first mask pattern on the target mask.

[0096] Multiple second hollowings are selected for use separately, and it is not limited to that multiple second hollowings are selected for use in sequence along the second preset direction. As long as multiple second hollowings are selected for use, it is sufficient. It is not limited to that multiple second hollowings are selected for use in sequence according to a certain arrangement direction.

[0097] Exemplarily, the second preset direction may be the same as the circumferential direction of the first mask pattern. For example, the circumferential direction of the first mask pattern is the circumferential direction of the polygon, and the second preset direction may be the circumferential direction of the polygon. The number of second hollowings may be the same as the number of sides of the polygon. The extension direction of the second hollowings may be the same as the extension direction of one side of the polygon, and the extension directions of the plurality of second hollowings may be the same as the extension directions of the plurality of sides of the polygon. For example, Figure 4 and Figure 2 In the figure, the extension direction of the second hollow 21a is parallel to the extension direction of the upper edge of the first mask pattern 06, the extension direction of the second hollow 21b is parallel to the extension direction of the right edge of the first mask pattern 06, the extension direction of the second hollow 21c is parallel to the extension direction of the lower edge of the first mask pattern 06, and the extension direction of the second hollow 21d is parallel to the extension direction of the left edge of the first mask pattern 06.

[0098] Figure 8The schematic diagram is a diagram of preparing a first mask pattern using a basic mask. The corner edge of the first mask pattern is a right angle, and the exposure process of preparing the first mask pattern includes: during the first exposure, the second selected area of ​​the second hollow 21a can be exposed and the area outside the second selected area of ​​the basic mask can be shielded, and the upper edge of the second photoresist pattern is formed after exposure; during the second exposure, the second selected area of ​​the second hollow 21b can be selected and the area outside the second selected area of ​​the basic mask can be shielded, and the right edge of the second photoresist pattern is formed after exposure; during the third exposure, the second selected area of ​​the second hollow 21d can be selected and the area outside the second selected area of ​​the basic mask can be shielded, and the left edge of the second photoresist pattern is formed after exposure; during the fourth exposure, the second selected area of ​​the second hollow 21c can be selected and the area outside the second selected area of ​​the basic mask can be shielded, and the lower edge of the second photoresist pattern is formed after exposure. The second photoresist pattern corresponds to the first mask pattern. After development, the second mask film covered by the second photoresist pattern and not etched forms the first mask pattern. The first mask pattern is a rectangle with four right-angled edges at the corners.

[0099] exist Figure 4 and Figure 8 In the embodiment, the length of each edge of the first mask pattern is smaller than the length of the corresponding second hollowing, and therefore, the first mask pattern can be exposed four times to form a second photoresist pattern corresponding to the first mask pattern.

[0100] In other embodiments, when the edge length of the first mask pattern is greater than the length of the second hollowing, an edge of the first mask pattern may be formed by multiple splicing exposures.

[0101] Fig. 9 FIG. 1 is a schematic diagram of exposure for preparing a plurality of first mask patterns using a basic mask. Fig. 9 As shown, to prepare a first mask pattern, the second hollows 21a, 21b, 21c and 21d need to be respectively selected for four exposures, and the four exposures are spliced ​​to form a second photoresist pattern corresponding to the first mask pattern. In order to prepare 8 first mask patterns, 32 exposures are required, and 32 exposures are spliced ​​to form 8 second photoresist patterns, and the 8 second photoresist patterns are AA00, AB00, AC00, AD00, AA01, AB01, AC01 and AD01.

[0102] In one embodiment, Figure 4 As shown, the width W of the second hollowing may be 0.8 mm to 1.2 mm. For example, the width W of the second hollowing may be 0.8 mm, 1.0 mm or 1.2 mm.

[0103] In one embodiment, the width W of the second hollowing may be 2.5 mm to 3.5 mm. For example, the width W of the second hollowing may be 2.5 mm, 3.0 mm or 3.5 mm.

[0104] It should be noted that the width of the second hollow is the size of the second hollow perpendicular to its extension direction. The width of the second hollow can be determined according to actual needs. Usually, the width of the second hollow is greater than the exposure accuracy to avoid photoresist adhesion in the second hollow during exposure.

[0105] In one embodiment, Figure 4 As shown, the basic mask plate may be provided with a plurality of second hollows, and the sizes of the plurality of second hollows may be different, for example, the widths and / or lengths of the plurality of second hollows are different. Figure 4 In the embodiment, the sizes of the second hollow 21, the second hollow 22, the second hollow 31, and the second hollow 32 may be different.

[0106] Fig.10 To adopt Figure 4 Schematic diagram of a target mask prepared from a basic mask. Fig.10 As shown, the target mask includes four positioning marks M1, M2, M3 and M4, and also includes eight first mask patterns AA10, AB10, AC10, AD10, AA11, AB11, AC11 and AD11, and the corners of each first mask pattern are right angles. The eight first mask patterns AA10, AB10, AC10, AD10, AA11, AB11, AC11 and AD11 are Fig. 9 The eight second photoresist patterns AA00, AB00, AC00, AD00, AA01, AB01, AC01 and AD01 correspond to each other one by one.

[0107] Fig.11 FIG. 1 is a schematic diagram of the shape of the third hollowing out in one embodiment. Figure 4 and Fig.11 As shown, the hollow pattern may further include a third hollow, and the third hollow may include a first sub-hollow 411 and a second sub-hollow 412, and the first sub-hollow 411 and the second sub-hollow 412 are intersected and connected. The inner boundaries of the first sub-hollow 411 and the second sub-hollow 412 are connected by rounded corners. The third hollow is used to form the corner edge of the first mask pattern on the target mask when it is selected for use, and the corner edge of the first mask pattern is a rounded corner. It should be noted that the first sub-hollow 411 and the second sub-hollow 412 are intersected and connected, and the side of the angle less than 180° formed by the first sub-hollow 411 and the second sub-hollow 412 is the inner side of the third hollow, and the side of the angle greater than 180° formed by the first sub-hollow 411 and the second sub-hollow 412 is the outer side of the third hollow.

[0108] The corners of the first mask pattern of the target mask can be rounded. During the exposure process, the third hollowing can be selected to expose the second selected area of ​​the third hollowing, and the area outside the second selected area of ​​the third hollowing in the base mask is shielded. After exposure, the corner edge of the first mask pattern can be formed, and the corner edge of the first mask pattern is rounded.

[0109] By providing the third hollowing, the basic mask plate can be applied to mask patterns with rounded corner edges, further expanding the application range of the basic mask plate.

[0110] Exemplarily, the radius of the fillet may be 0.8 mm to 1.2 mm. For example, the radius of the fillet may be 0.8 mm, 1.0 mm or 1.2 mm.

[0111] Exemplarily, the radius of the fillet may be 2.5 mm to 3.5 mm. For example, the radius of the fillet may be 2.5 mm, 3.0 mm or 3.5 mm.

[0112] Exemplarily, the radius of the fillet may be 4.5 mm to 5.5 mm. For example, the radius of the fillet may be 4.5 mm, 5.0 mm or 5.5 mm.

[0113] like Figure 4 and Fig.11 As shown, the extension directions of the first sub-hollow 411 and the second sub-hollow 412 are perpendicular, and the outer boundaries of the first sub-hollow 411 and the second sub-hollow 412 are connected at right angles. Such a third hollow can be suitable for the first quadrilateral mask pattern, which can meet the requirements of the sealant curing mask of most specifications of products.

[0114] In other embodiments, the angle between the extension directions of the first sub-hollow 411 and the second sub-hollow 412 can be set as needed. A variety of third hollows can be set, and the angle between the extension directions of the first sub-hollow and the second sub-hollow in each third hollow can be different, so as to meet the requirements of different angle corner edges of the first mask pattern.

[0115] Fig.12 FIG. 1 is a schematic diagram of using a basic mask plate to prepare a first mask pattern in another embodiment. Fig.12 As shown, the corner edge of the first mask pattern may be a rounded corner. In one embodiment, the number of the third hollowings may be multiple, and the multiple third hollowings are arranged in sequence along the second preset direction.

[0116] The second preset direction may be the same as the circumferential direction of the first mask pattern, and a plurality of third hollowings may be respectively arranged at corner positions of the second preset direction. The number of the third hollowings may be the same as the number of corners of the first mask pattern. By respectively selecting selected areas of the third hollowings for exposure, the edges of the corners of the first mask pattern may be formed.

[0117] For example, in Figure 4 In the figure, the number of the third hollowings is four, namely the third hollowings 41a, 41b, 41c, and 41d, and the four third hollowings 41a, 41b, 41c, and 41d are respectively arranged at the corner positions of the second preset direction.

[0118] The selected portion of the third hollow 41a can be used to expose the upper left corner edge of the first mask pattern; the selected portion of the third hollow 41b can be used to expose the upper right corner edge of the first mask pattern; the selected portion of the third hollow 41c can be used to expose the lower right corner edge of the first mask pattern; and the selected portion of the third hollow 41d can be used to expose the lower corner edge of the first mask pattern.

[0119] In one embodiment, Figure 4 As shown, there are multiple second hollows, each of which is sequentially located between two adjacent third hollows along the second preset direction, and multiple second hollows and multiple third hollows are respectively selected to prepare the first mask pattern on the target mask. The third hollow can be set at a corner position in the second preset direction.

[0120] Arranging the plurality of second hollowings and the plurality of third hollowings to be sequentially spaced and arranged along the second preset direction can save space and is conducive to arranging hollowing patterns with more structures on the basic mask.

[0121] like Figure 4 As shown, the number of second hollowings 31 is 4, the number of third hollowings 41 is 4, the four second hollowings 31a, 31b, 31c, 31d and the four third hollowings 41a, 41b, 41c, 41d are arranged at intervals along the second preset direction, and the four third hollowings 41a, 41b, 41c, 41d are respectively arranged at the corner positions of the second preset direction.

[0122] In the exposure process of forming the first mask pattern, 8 exposures can be used, and one second hollow 31 or one third hollow 41 is selected in each exposure. The 8 exposures are used to splice the edge of the second photoresist pattern, and the second mask film covered by the second photoresist pattern and not etched forms the first mask pattern. The first mask pattern is a rectangle, and the four corners of the rectangle are rounded, such as Fig.12 shown.

[0123] like Figure 4 and Fig.12 As shown, the corner edge of the first mask pattern is a rounded corner, and the exposure process for preparing the first mask pattern includes: during the first exposure, the second selected area of ​​the second hollow 31a can be exposed and the area outside the second selected area of ​​the basic mask can be shielded, and the upper edge of the second photoresist pattern is formed after exposure; during the second exposure, the second selected area of ​​the second hollow 31b can be selected and the area outside the second selected area of ​​the basic mask can be shielded, and the right edge of the second photoresist pattern is formed after exposure; during the third exposure, the second selected area of ​​the second hollow 31d can be selected and the area outside the second selected area of ​​the basic mask can be shielded, and the left edge of the second photoresist pattern is formed after exposure; during the fourth exposure, the second selected area of ​​the second hollow 31c can be selected and the area outside the second selected area of ​​the basic mask can be shielded, and the second photoresist pattern is formed after exposure. The lower edge of the photoresist pattern; during the fifth exposure, the second selected area of ​​the third hollow 41a can be selected and the area outside the second selected area of ​​the third hollow 41a can be shielded, and the upper left rounded corner of the second photoresist pattern can be formed after exposure; during the sixth exposure, the second selected area of ​​the third hollow 41b can be selected and the area outside the second selected area of ​​the third hollow 41b can be shielded, and the upper right rounded corner of the second photoresist pattern can be formed after exposure; during the seventh exposure, the second selected area of ​​the third hollow 41c can be selected and the area outside the second selected area of ​​the third hollow 41c can be shielded, and the lower right rounded corner of the second photoresist pattern can be formed after exposure; during the eighth exposure, the second selected area of ​​the third hollow 41d can be selected and the area outside the second selected area of ​​the third hollow 41d can be shielded, and the lower rounded corner of the second photoresist pattern can be formed after exposure. Thus, through eight exposures, the second photoresist pattern is spliced ​​out by eight exposures, and the second photoresist pattern corresponds to the first mask pattern. After development, the second mask film covered by the second photoresist pattern but not etched away forms a first mask pattern. The first mask pattern is a rectangle with four rounded corners.

[0124] It should be noted that in the process of forming the second photoresist pattern by exposure, the order of selecting the second hollowings or the third hollowings is not limited. As long as multiple second hollowings and / or multiple third hollowings are selected respectively, they can be spliced ​​and exposed to form a second photoresist pattern corresponding to the first mask pattern.

[0125] Fig.13 To adopt Figure 4 Schematic diagram of a target mask prepared from a basic mask. Fig.13 As shown, the target mask includes four positioning marks M1, M2, M3 and M4, and eight first mask patterns AA10, AB10, AC10, AD10, AA11, AB11, AC11 and AD11, and the corners of each first mask pattern are rounded.

[0126] It should be noted that in Fig.10 and Fig.13 In the target mask shown, two redundant patterns are respectively formed between the positioning marks M1 and M2 and between the positioning marks M3 and M4. The redundant patterns are located outside the first mask pattern and will not affect the exposure of the sealant.

[0127] In one embodiment, Figure 4 As shown, the basic mask plate can be provided with a variety of third hollowings, and the sizes of the various third hollowings can be different. For example, the fillet radii of the various third hollowings can be different. Figure 4 The basic mask in the embodiment is provided with two third hollows, and the fillet radii of the third hollow 41 and the third hollow 42 may be different. Figure 4 In the figure, the four second hollows 31 and the four third hollows 41 are arranged at intervals along the second preset direction, and the four third hollows 41 are respectively arranged at the corner positions of the second preset direction; the four second hollows 32 and the four third hollows 42 are arranged at intervals along the second preset direction, and the four third hollows 42 are respectively arranged at the corner positions of the second preset direction.

[0128] In one embodiment, Figure 4 As shown, the extension direction of each hollow pattern is parallel to the corresponding edge of the first substrate. For example, the extension direction of the first hollow is parallel to the corresponding edge of the first substrate, the extension direction of the second hollow is parallel to the corresponding edge of the first substrate, and the extension direction of the third hollow is parallel to the corner edge of the first substrate.

[0129] Figure 4 FIG. 1 shows a basic mask in an embodiment. It is understood by those skilled in the art that the hollow pattern in the basic mask is not limited to the following. Figure 4 With such arrangement, the extension direction of the hollow pattern can be set according to the shape of the mask pattern in the target mask. For example, if the mask pattern in the target mask is circular, the hollow pattern can be set to an arc shape.

[0130] In one embodiment, a first mask layer may be formed by a patterning process. For example, a first mask film is deposited on a first substrate, and a hollow pattern is formed by a patterning process, thereby forming a first mask layer. The material of the first mask layer may be a material having a light-shielding property, for example, the material of the first mask layer may include chromium. It is understood that the "patterning" mentioned herein, when the patterned material is an inorganic material or a metal, "patterning" includes processes such as coating photoresist, mask exposure, development, etching, and stripping photoresist, and when the patterned material is an organic material, "patterning" includes processes such as mask exposure and development, and the evaporation, deposition, coating, and coating mentioned herein are all mature preparation processes in the relevant technology.

[0131] The disclosed embodiment also provides a method for preparing a target mask. The target mask includes a second substrate and a second mask layer located on one side of the second substrate, and the second mask layer includes a first mask pattern and a positioning mark. The method for preparing the target mask includes steps 1 to 3.

[0132] Step 1: forming a second mask film on one side of a second substrate.

[0133] Step 2: coating photoresist on the side of the second mask film facing away from the second substrate to form a photoresist film.

[0134] Step 3, using the basic mask in any embodiment of the present disclosure as a mask, exposing the selected area of ​​the target hollow pattern, shielding the area outside the selected area in the basic mask, exposing the photoresist film in the area to be exposed, removing the photoresist film and the second mask film in the area to be exposed, and the remaining second mask film forms a second mask layer. The area to be exposed is the area outside the second mask layer in the target mask, the target hollow pattern is selected from the hollow pattern of the basic mask, and the selected area is at least a part of the target hollow pattern.

[0135] Such a method for preparing a target mask can select a target hollow pattern from the hollow patterns multiple times, expose the area to be exposed multiple times, and realize exposure of the entire area to be exposed by splicing multiple exposures. Regardless of the specifications of the target mask, the basic mask of the embodiment of the present disclosure and the preparation method of the embodiment of the present disclosure can be used to prepare the target mask, thereby expanding the application range of the basic mask and reducing development and production costs.

[0136] The target hollowing pattern selected for each exposure may be different, or the target hollowing pattern selected for each exposure may be the same but the selected area may be different.

[0137] In one embodiment, reference Figure 4 , the hollow pattern includes a positioning hollow 11, the positioning hollow 11 includes a first hollow and a marking pattern, the orthographic projection of the marking pattern on the first substrate is located within the orthographic projection of the first hollow on the first substrate, and the target hollow pattern includes the positioning hollow. Step 3 may include: step 31, exposing a first selected area of ​​the positioning hollow, shielding an area outside the first selected area in the basic mask, and exposing the photoresist film in the area to be exposed to form a first photoresist pattern corresponding to the marking pattern on the photoresist film.

[0138] When preparing the positioning mark on the target mask, the positioning hollowing can be selected as the target hollowing pattern. During exposure, the first selected area of ​​the positioning hollowing can be exposed, and the area outside the first selected area in the base mask can be shielded, and the first selected area includes the marking pattern; the target mask is exposed using ultraviolet light. Thus, a first photoresist pattern corresponding to the marking pattern is formed in the photoresist film of the target mask.

[0139] At least two marking patterns may be arranged in the first hollowing. The positioning hollowing may be selected as the target hollowing pattern multiple times, and different first selected areas of the positioning hollowing may be selected each time, and multiple exposures and splicing of the multiple exposures may be used to form multiple first photoresist patterns.

[0140] Figure 7 Four exposures are used, and the four exposures are spliced ​​to form four first photoresist patterns E1, E2, E3, and E4. The specific process of forming multiple first photoresist patterns corresponding to the marking pattern by splicing multiple exposures has been described above and will not be repeated here.

[0141] In one embodiment, the hollow pattern includes a second hollow and / or a third hollow, the target hollow pattern includes a second hollow and / or a third hollow, the target hollow pattern includes a second hollow and / or a third hollow, step 3 includes: step 32: exposing a second selected area of ​​the second hollow and / or the third hollow, the boundary of the second selected area coincides with at least part of the edge of the first mask pattern, shielding the area outside the second selected area in the basic mask plate, exposing the photoresist film in the exposure area to form a second photoresist pattern defined by the second hollow and / or the third hollow on the photoresist film, and the second photoresist pattern corresponds to the first mask pattern.

[0142] In one exposure, the second hollowing can be selected as the target hollowing pattern to expose the second selected area of ​​the second hollowing, and the area outside the second selected area of ​​the second hollowing in the basic mask is blocked. After the photoresist film is exposed, at least a partial edge of the second photoresist pattern is formed.

[0143] Refer to the above Fig. 9 According to the related description, a first mask pattern is prepared, and the second hollows 21a, 21b, 21c and 21d are respectively selected for four exposures, and the four exposures are spliced ​​to form a second photoresist pattern corresponding to the first mask pattern, and the corners of the first mask pattern are right angles.

[0144] In one exposure, the third hollowing out can be selected as the target hollowing out pattern to expose the second selected area of ​​the third hollowing out, and the area outside the second selected area of ​​the third hollowing out in the basic mask plate is blocked. After the photoresist film is exposed, the corner edge of the second photoresist pattern is formed.

[0145] Refer to the above Fig.12 According to the relevant description, a first mask pattern is prepared, and the second hollows 31a, 31b, 31c and 31d and the third hollows 41a, 41b, 41c and 41d are respectively selected for eight exposures, and the eight exposures are spliced ​​into a second photoresist pattern corresponding to the first mask pattern, and the corners of the first mask pattern are rounded.

[0146] The exposure process of preparing the first mask pattern of the target mask using the basic mask has been described in detail above and will not be repeated here.

[0147] In one embodiment, step 3 also includes step 33, which includes: dividing the unexposed photoresist film in the area to be exposed into multiple sub-areas to be exposed according to the hollow pattern; exposing the third selected area of ​​the target hollow pattern corresponding to the sub-area to be exposed, shielding the area outside the third selected area in the basic mask, and exposing the photoresist film in the sub-area to be exposed.

[0148] After the first photoresist pattern and the second photoresist pattern are formed by adopting steps 31 and 32, the remaining photoresist film needs to be completely removed, so the remaining photoresist film needs to be exposed. The unexposed photoresist film can be divided into a plurality of sub-areas to be exposed according to the hollow pattern in the basic mask, and the sub-areas to be exposed can correspond to at least one hollow pattern. When exposing the sub-area to be exposed, a target hollow pattern corresponding to the sub-area to be exposed can be selected, the third selected area of ​​the target hollow pattern is exposed, the area outside the third selected area in the basic mask is shielded, and the photoresist film in the sub-area to be exposed is exposed.

[0149] Fig.14 Schematic diagram of dividing the unexposed photoresist film. Fig.14 As shown, after exposure using positioning hollowing and the second hollowing as the target hollowing pattern, the photoresist film outside the first photoresist pattern and the second photoresist pattern needs to be further exposed and removed. The photoresist film to be exposed can be divided according to the size of the remaining photoresist film and the hollowing pattern in the basic mask. For example, the P1 pattern, P2 pattern, P3 pattern, P4 pattern, P5 pattern, P6 pattern, P7 pattern in the vertical direction and the P8 pattern, P9 pattern and P10 pattern in the horizontal direction all need to be exposed. A hollowing pattern of a suitable size can be selected as the target hollowing pattern, and these remaining photoresist films are spliced ​​and exposed. For example, for the P1 pattern, P2 pattern, P6 pattern, and P7 pattern with a smaller width dimension, the target hollowing pattern can be exposed by splicing exposure multiple times. For a pattern with a width dimension greater than a preset size, such as a P9 pattern, the target hollowing pattern can be exposed by splicing exposure multiple times.

[0150] In one embodiment, the size of the sub-area to be exposed is larger than a preset size, and step 3 further includes: step 34, using a baffle to block the area outside the sub-area to be exposed, the distance between the boundary of the baffle and the corresponding boundary of the sub-area to be exposed is greater than the exposure accuracy, and the area not blocked by the baffle is exposed.

[0151] For patterns with a width larger than a preset size, such as the P9 pattern, in order to reduce the number of exposures and improve exposure efficiency, a baffle can be used to block the area outside the sub-area to be exposed. It is necessary to ensure that the area not blocked by the baffle is larger than the sub-area to be exposed so that the sub-area to be exposed can be exposed once to remove the P9 pattern.

[0152] It should be noted that the specific value of the preset size can be set according to actual conditions.

[0153] Fig.15 is a schematic diagram of shielding around a sub-area to be exposed. Fig.15 As shown, a baffle can be used to shield the sub-area to be exposed, such as the P9 pattern, and the distance S between the boundary of the baffle and the corresponding boundary of the sub-area to be exposed is greater than the exposure accuracy. Therefore, when the P9 pattern is exposed, it can prevent the peripheral exposure residue and avoid affecting the curing effect of the sealant.

[0154] For the P8 pattern and the P10 pattern, exposure can be performed in a similar exposure method to the P9 pattern, thereby reducing the number of exposure times and improving exposure efficiency.

[0155] In the above embodiment, the target hollow pattern is preferentially selected to expose the first photoresist pattern corresponding to the mark pattern and the second photoresist pattern corresponding to the first mask pattern, and then the unexposed photoresist film in the area to be exposed is divided into a plurality of sub-areas to be exposed, and the sub-areas to be exposed are exposed respectively. In this way, the subsequent exposure can avoid affecting the positioning mark and the first mask pattern formed finally.

[0156] In other embodiments, step 3 may include: dividing the photoresist film in the area to be exposed into a plurality of sub-areas to be exposed according to the hollow pattern in the basic mask plate according to any one of claims 1 to 12; using the basic mask plate as a mask to expose the selected area of ​​the target hollow pattern, shielding the area outside the selected area in the basic mask plate, exposing the sub-areas to be exposed, so as to remove the photoresist film and the second mask film in the area to be exposed, and the remaining second mask film forms a second mask layer. Wherein, the target hollow pattern corresponds to the sub-area to be exposed, the target hollow pattern is selected from the hollow pattern of the basic mask plate, the selected area is at least a part of the target hollow pattern; the area to be exposed is the area outside the second mask layer in the target mask plate.

[0157] In this way, the photoresist film in the area to be exposed is preferentially divided into multiple sub-areas to be exposed, and then each sub-area to be exposed is exposed separately, and finally the photoresist film and the second mask film in the area to be exposed are removed, and the remaining second mask film forms a second mask layer.

[0158] In actual implementation, the order of dividing the sub-areas to be exposed is not limited. The pattern corresponding to the second mask layer can be exposed first and then the remaining photoresist can be divided into multiple exposure sub-areas. Alternatively, the photoresist in the area to be exposed can be divided into multiple sub-areas to be exposed and then exposed in sequence. The order of dividing the sub-areas to be exposed can be set according to actual needs.

[0159] The present disclosure also provides a target mask, which is prepared by the method for preparing a target mask in any embodiment of the present disclosure. The target mask may include a second substrate and a second mask layer located on the second substrate, wherein the second mask layer includes a positioning mark and a first mask pattern, such as Fig.10 and Fig.13 The target mask is used to display the cured mask of the frame in the panel.

[0160] The embodiment of the present disclosure also provides a method for preparing a display panel. The display panel includes a first substrate and a second substrate arranged in a box. An alignment mark is arranged on the first substrate and / or the second substrate. The display panel includes a display area, and the alignment mark is located outside the display area. The display panel also includes a frame glue surrounding the display area and located between the first substrate and the second substrate. Exemplarily, the first substrate can be one of an array substrate and a color filter substrate, and the second substrate can be the other. For example, the first substrate is an array substrate, and the second substrate is a color filter substrate.

[0161] The preparation method of the display panel includes: setting the target mask in the embodiment of the present disclosure on one side of the display panel, so that the positioning mark of the target mask corresponds to the alignment mark, the display area is located within the orthographic projection of the first mask pattern on the display panel, and the orthographic projection of the first mask pattern on the display panel is located within the area defined by the frame glue; using the target mask as a mask, using ultraviolet light to cure the frame glue.

[0162] You can refer to Figure 3 , setting the target mask on the side of the first substrate away from the second substrate, aligning the positioning mark on the target mask with the alignment mark on the display panel, so that the display area is located within the orthographic projection of the first mask pattern on the display panel, and the orthographic projection of the first mask pattern on the display panel is located within the area limited by the sealant; using the target mask as a mask, using ultraviolet light to irradiate the sealant to achieve curing of the sealant.

[0163] It should be noted that in actual production, multiple display panels are usually cured with sealant at the same time, that is, the target mask of the embodiment of the present disclosure is used to cure the sealant of the array substrate motherboard and the color filter substrate motherboard set in the box, and then cut after curing to cut out multiple display panels. Fig.10 or Fig.13 The target mask shown can perform sealant curing on 6 display panels at the same time. The display panels are liquid crystal display panels.

[0164] The display device may include a display panel, and the display device may be: a mobile phone, a tablet computer, a television, a monitor, a laptop computer, a digital photo frame, a navigator, or any other product or component with a display function.

[0165] In the description of this specification, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present disclosure and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present disclosure.

[0166] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of the present disclosure, the meaning of "plurality" is two or more, unless otherwise clearly and specifically defined.

[0167] In the present disclosure, unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection, an electrical connection, or a communication; it can be a direct connection, or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in the present disclosure can be understood according to specific circumstances.

[0168] In the present disclosure, unless otherwise clearly specified and limited, a first feature being “above” or “below” a second feature may include that the first and second features are in direct contact, or may include that the first and second features are not in direct contact but are in contact through another feature between them. Moreover, a first feature being “above”, “above”, and “above” a second feature includes that the first feature is directly above and obliquely above the second feature, or simply indicates that the first feature is higher in level than the second feature. A first feature being “below”, “below”, and “below” a second feature includes that the first feature is directly above and obliquely above the second feature, or simply indicates that the first feature is lower in level than the second feature.

[0169] The disclosure above provides many different embodiments or examples to implement different structures of the present disclosure. In order to simplify the present disclosure, the components and settings of specific examples are described above. Of course, they are only examples, and the purpose is not to limit the present disclosure. In addition, the present disclosure can repeat reference numbers and / or reference letters in different examples, and this repetition is for the purpose of simplification and clarity, which itself does not indicate the relationship between the various embodiments and / or settings discussed.

[0170] The above are only specific embodiments of the present disclosure, but the protection scope of the present disclosure is not limited thereto. Any technician familiar with the technical field can easily think of various changes or substitutions within the technical scope disclosed in the present disclosure, which should be included in the protection scope of the present disclosure. Therefore, the protection scope of the present disclosure should be based on the protection scope of the claims.

Claims

1. A basic mask, characterized in that: include: a first substrate; A first mask layer is located on one side of the first substrate. The first mask layer is provided with at least one hollow pattern. The hollow pattern is used to expose a selected area when it is selected for use to prepare a corresponding mask pattern on a target mask plate, and is blocked when it is not selected for use. The selected area is at least a partial area of ​​the hollow pattern selected for use.

2. The basic mask according to claim 1, characterized in that: The hollow pattern includes a positioning hollow, and the positioning hollow includes a first hollow and a marking pattern. The orthographic projection of the marking pattern on the first substrate is located within the orthographic projection of the first hollow on the first substrate. The positioning hollow is used to prepare a positioning mark corresponding to the marking pattern on the target mask when it is selected for use.

3. The basic mask according to claim 2, characterized in that: At least two of the marking patterns are arranged in the first hollow, and the positioning hollow is used to expose a region containing a different marking pattern each time when it is selected for use multiple times, so as to prepare a plurality of the positioning marks on the target mask.

4. The basic mask according to claim 2, characterized in that: There are multiple positioning hollows, and the multiple positioning hollows are arranged in sequence along a first preset direction. In the first preset direction, the extension directions of two adjacent first hollows intersect, and the extension directions of the multiple first hollows can intersect in sequence to enclose a closed area.

5. The basic mask according to any one of claims 1 to 4, characterized in that: The hollow pattern further includes a second hollow, and the second hollow is used to form at least a portion of an edge of the first mask pattern on the target mask when the second hollow is selected for use.

6. The basic mask according to claim 5, characterized in that: There are multiple second hollowings, and the multiple second hollowings are arranged in sequence along a second preset direction. In the second preset direction, the extension directions of two adjacent second hollowings intersect, and the multiple second hollowings are used to be selected and used respectively to prepare the first mask pattern on the target mask.

7. The basic mask according to claim 5, characterized in that: The width of the second hollowing is 0.8 mm to 1.2 mm; or the width of the second hollowing is 2.5 mm to 3.5 mm.

8. The basic mask according to claim 5, characterized in that: The hollow pattern also includes a third hollow, and the third hollow includes a first sub-hollow and a second sub-hollow, the first sub-hollow and the second sub-hollow are intersected and connected, and the inner boundaries of the first sub-hollow and the second sub-hollow are connected by rounded corners. The third hollow is used to form the corner edge of the first mask pattern on the target mask plate when it is selected for use, and the corner edge of the first mask pattern is a rounded corner.

9. The basic mask according to claim 8, characterized in that: The radius of the fillet is 0.8 mm to 1.2 mm or 2.5 mm to 3.5 mm or 4.5 mm to 5.5 mm.

10. The basic mask according to claim 8, characterized in that: The extension directions of the first sub-hollow and the second sub-hollow are perpendicular to each other, and the outer boundaries of the first sub-hollow and the second sub-hollow are connected at a right angle.

11. The basic mask according to claim 8, characterized in that: There are multiple third hollowings, and the multiple third hollowings are arranged in sequence along a second preset direction. There are multiple second hollowings, and each of the second hollowings is located between two adjacent third hollowings in sequence along the second preset direction. The multiple second hollowings and the multiple third hollowings are used to be selected and used in sequence to prepare a first mask pattern on the target mask.

12. The basic mask according to claim 1, characterized in that: An extension direction of each of the hollow patterns is parallel to a corresponding edge of the first substrate.

13. A method for preparing a target mask, characterized in that: The target mask includes a second substrate and a second mask layer located on one side of the second substrate, the second mask layer includes a first mask pattern and a positioning mark, and the method includes: Step 1: forming a second mask film on one side of a second substrate; Step 2: coating a photoresist on a side of the second mask film facing away from the second substrate to form a photoresist film; Step 3: Use the basic mask described in any one of claims 1 to 12 as a mask to expose the selected area of ​​the target hollow pattern, block the area outside the selected area in the basic mask, expose the photoresist film in the area to be exposed, so as to remove the photoresist film and the second mask film in the area to be exposed, and the remaining second mask film forms the second mask layer; wherein the area to be exposed is the area outside the second mask layer in the target mask, the target hollow pattern is selected from the hollow patterns of the basic mask, and the selected area is at least a portion of the target hollow pattern.

14. The method according to claim 13, characterized in that: The hollow pattern includes a positioning hollow, the positioning hollow includes a first hollow and a marking pattern, the orthographic projection of the marking pattern on the first substrate is located within the orthographic projection of the first hollow on the first substrate, the target hollow pattern includes the positioning hollow, and step 3 includes: Step 31: Expose the first selected area of ​​the positioning hollowing, shield the area outside the first selected area in the basic mask, and expose the photoresist film in the area to be exposed to form a first photoresist pattern corresponding to the marking pattern on the photoresist film.

15. The method according to claim 13, characterized in that: The hollow pattern includes the second hollow and / or the third hollow, the target hollow pattern includes the second hollow and / or the third hollow, the target hollow pattern includes the second hollow and / or the third hollow, and the step 3 includes: Step 32: Expose the second selected area of ​​the second hollowing out and / or the third hollowing out, wherein the boundary of the second selected area coincides with at least a portion of the edge of the first mask pattern, and the area outside the second selected area in the basic mask is shielded, and the photoresist film in the area to be exposed is exposed to form a second photoresist pattern defined by the second hollowing out and / or the third hollowing out on the photoresist film, wherein the second photoresist pattern corresponds to the first mask pattern.

16. The method according to claim 14 or 15, characterized in that: The step 3 also includes a step 33, which includes: Dividing the unexposed photoresist film in the area to be exposed into a plurality of sub-areas to be exposed according to the hollow pattern; The third selected area of ​​the target hollow pattern corresponding to the sub-area to be exposed is exposed, the area outside the third selected area in the basic mask is shielded, and the photoresist film in the sub-area to be exposed is exposed.

17. The method according to claim 16, characterized in that The size of the sub-area to be exposed is larger than a preset size, and step 3 further includes: Step 34, using a baffle to block the area outside the sub-area to be exposed, the distance between the boundary of the baffle and the corresponding boundary of the sub-area to be exposed is greater than the exposure accuracy, and exposing the area not blocked by the baffle.

18. A target mask, characterized in that: The target mask is prepared by the method according to any one of claims 13 to 17, wherein the target mask comprises a second substrate and a second mask layer located on the second substrate, wherein the second mask layer comprises a positioning mark and a first mask pattern.

19. A method for preparing a display panel, characterized in that: The display panel comprises a first substrate and a second substrate arranged in a box, an alignment mark is arranged on the first substrate and / or the second substrate, the display panel comprises a display area, and also comprises a frame glue surrounding the display area and located between the first substrate and the second substrate, the method comprises: The target mask of claim 18 is arranged on one side of the display panel, so that the positioning mark of the target mask corresponds to the alignment mark, the display area is located within the orthographic projection of the first mask pattern on the display panel, and the orthographic projection of the first mask pattern on the display panel is located within the area defined by the sealant; The target mask plate is used as a mask, and ultraviolet light is used to cure the frame glue.

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