Mask and method for manufacturing mask

Abstract

The invention provides a mask and a method for manufacturing the mask. The first end of the wall surface of the mask may be positioned further inward than the second end. The wall surface may include: a first wall surface positioned between the first end and a first imaginary point where the first imaginary straight line intersects the wall surface; and a second wall surface located between the first imaginary point and the second end. The first imaginary straight line is an imaginary straight line passing through the first end and the second end. The first wall surface may include a portion located further inward than the first imaginary straight line. The wall surface may have a second dimension, which is a distance in the in-plane direction of the first surface, between the first end and a second imaginary point at which the second imaginary straight line intersects the first surface. The second imaginary straight line passes through the second end and extends in the thickness direction. The first wall surface may have a third dimension, which is a distance between the first imaginary straight line and the third imaginary straight line in the in-plane direction of the first surface. The third imaginary straight line is an imaginary straight line extending parallel to the first imaginary straight line and tangent to the first wall surface. The ratio of the third dimension to the second dimension may be 0.120 or less.

Description

Technical Field

[0001] Embodiments of the present disclosure relate to a mask and a method of manufacturing the mask. Background Art

[0002] Organic devices such as organic EL display devices have attracted attention. As a method for forming an element of an organic device, a method is known in which a material constituting the element is attached to a substrate by a physical film forming method such as evaporation. A substrate having a first electrode formed in a pattern corresponding to the element is prepared. Then, an organic material is attached to the first electrode through a through hole of a mask. The organic material attached to the first electrode constitutes an organic layer. Subsequently, a second electrode is formed on the organic layer.

[0003] As a method for manufacturing a mask, there is known a method of etching a metal plate to form a through hole. The manufacturing method includes, for example, a first etching step of etching a first surface of a metal plate to form a plurality of first recesses on the first surface; a step of filling the first recesses with a resin; and a second etching step of etching a second surface of the metal plate to form a plurality of second recesses on the second surface. The second recesses are connected to the first recesses, thereby forming a through hole that penetrates the metal plate.

[0004] Patent Document 1: Japanese Patent Application Publication No. 2018-111879

[0005] In the film forming process using a mask, the thickness of the layer formed on the substrate decreases at the end of the layer. This phenomenon is also called shadowing. Shadowing is caused by a part of the area of ​​the substrate being blocked by the shadow of the wall surface of the through hole of the mask. Summary of the invention

[0006] An object of one embodiment of the present disclosure is to provide a mask that suppresses shadows.

[0007] A mask of one embodiment of the present disclosure may include a plurality of through holes. The mask may include: a metal plate including a first surface and a second surface located on the opposite side of the first surface in the thickness direction; and a wall surface facing the through hole, including a first end located on the first surface and a second end located on the opposite side of the first end in the thickness direction. The first end may be located at a position closer to the inside than the second end. The wall surface may include: a first wall surface located between a first imaginary point where a first imaginary straight line and the wall surface intersect and the first end; and a second wall surface located between the first imaginary point and the second end. The first imaginary straight line is an imaginary straight line passing through the first end and the second end. The first wall surface may include a portion located at a position closer to the inside than the first imaginary straight line. The wall surface may have a second dimension, which is the distance between the first end and a second imaginary point where a second imaginary straight line intersects the first surface, in the in-plane direction of the first surface. The second imaginary straight line is an imaginary straight line that passes through the second end and extends in the thickness direction. The first wall surface may have a third dimension, which is the distance between the first imaginary straight line and a third imaginary straight line in the in-plane direction of the first surface. The third imaginary straight line is an imaginary straight line that extends parallel to the first imaginary straight line and is tangent to the first wall surface. The ratio of the third dimension to the second dimension may be 0.120 or less.

[0008] According to the mask of one embodiment of the present disclosure, shadows can be suppressed. BRIEF DESCRIPTION OF THE DRAWINGS

[0009] Figure 1 It is a top view showing an example of an organic device.

[0010] Figure 2 It is a plan view showing an example of an element of an organic device.

[0011] Figure 3 It is along Figure 2 Cross-sectional view along line III-III.

[0012] Figure 4 It is a plan view showing an example of an organic device group.

[0013] Figure 5 This is a cross-sectional view showing an example of a vapor deposition device.

[0014] Figure 6 It is a top view showing an example of a mask device.

[0015] Figure 7 It is a top view showing an example of a mask.

[0016] Figure 8It is a perspective view showing an example of a through hole group.

[0017] Fig. 9 It is a cross-sectional view showing an example of a through hole group.

[0018] Fig.10 This is a plan view showing an example of the through-hole group in the first surface.

[0019] Fig.11 It is a top view showing an example of the through-hole group in the second surface.

[0020] Fig.12 It is a top view showing an example of the second end.

[0021] Fig.13 It is a diagram showing the observation direction of the cross section of the mask.

[0022] Fig.14A It is a figure which shows an example of the cross section of a mask.

[0023] Fig. 14B This is a cross-sectional view showing an example of the first wall surface.

[0024] Fig. 14C This is a cross-sectional view showing an example of the first wall surface.

[0025] Fig.15A It is a cross-sectional view showing an example of a vapor deposition process.

[0026] Fig. 15B It is a top view showing an example of an organic layer.

[0027] Fig.16 It is a cross-sectional view showing an example of a vapor deposition process.

[0028] Fig.17 This is a diagram showing an example of a mask manufacturing apparatus.

[0029] Fig.18 It is a cross-sectional view showing an example of a resist forming step.

[0030] Fig.19 It is a cross-sectional view showing an example of an exposure process.

[0031] Fig. 20 It is a cross-sectional view showing an example of a patterning process.

[0032] Fig.21 It is a top view showing an example of the first resist pattern.

[0033] Fig. 22 It is a top view showing an example of the second resist pattern.

[0034] Fig.23This is a cross-sectional view showing an example of the first etching step.

[0035] Fig.24 It is a cross-sectional view showing an example of the filling process.

[0036] Fig.25 It is a cross-sectional view showing an example of the second etching step.

[0037] Fig.26 It is a cross-sectional view showing an example of the second etching step.

[0038] Fig. 27 It is a cross-sectional view showing an example of the second etching step.

[0039] Fig.28 It is a cross-sectional view showing an example of the removing step.

[0040] Fig.29 It is a cross-sectional view showing an example of the second etching step.

[0041] Fig.30 This is a cross-sectional view showing an example of a wall surface.

[0042] Fig.31 It is a cross-sectional view showing the second etching step in the first comparative embodiment.

[0043] Fig.32A It is a diagram showing a cross section of a mask in a first comparative embodiment.

[0044] Fig.32B It is a cross-sectional view showing the first wall surface in the first comparative embodiment.

[0045] Fig.33 It is a cross-sectional view showing the second etching step in the second comparative embodiment.

[0046] Fig.34A It is a diagram showing a cross section of a mask in a second comparative embodiment.

[0047] Fig.34B It is a cross-sectional view showing the first wall surface in the second comparative embodiment.

[0048] Fig.35 It is a perspective view showing an example of a through hole group.

[0049] Fig.36 It is a cross-sectional view showing an example of a through hole group.

[0050] Fig.37 It is a cross-sectional view showing how a junction is formed in the second etching step.

[0051] Fig.38 This is a plan view showing an example of a junction portion at the second end of the wall surface.

[0052] Fig.39 It is a top view showing an example of a through hole group.

[0053] Fig.40 It is a perspective view showing an example of a through hole group.

[0054] Fig.41 This is a plan view showing an example of a junction portion at the second end of the wall surface.

[0055] Fig.42 It is a top view showing an example of a through hole group.

[0056] Fig.43 It is a top view showing an example of a through hole group.

[0057] Fig.44 A diagram showing a method of analyzing a cross-sectional image.

[0058] Fig.45 This is a table showing evaluation results of the masks of Examples A1 to A3.

[0059] Fig.46 This is a table showing evaluation results of the masks of Examples B1 to B3.

[0060] Fig.47A It is a diagram showing a cross section of a mask in a third comparative embodiment.

[0061] Fig.47B It is a cross-sectional view showing the first wall surface in the third comparative embodiment.

[0062] Fig.47C It is a cross-sectional view showing the first wall surface in the third comparative embodiment.

[0063] Fig.48A It is a diagram showing a cross section of a mask in a fourth comparative embodiment.

[0064] Fig.48B It is a cross-sectional view showing the first wall surface in the fourth comparative embodiment.

[0065] Fig.48C It is a cross-sectional view showing the first wall surface in the fourth comparative embodiment.

[0066] Fig.49 This is a diagram showing the overlap of the first wall surface of the mask in one embodiment and the first wall surface of the mask in a fourth comparative embodiment.

[0067] Fig.50 This is a diagram showing the overlap of the first wall surface of the mask in one embodiment and the first wall surface of the mask in a fourth comparative embodiment.

[0068] Fig.51 It is a cross-sectional view showing a method for manufacturing a mask in a fifth comparative embodiment.

[0069] Fig.52 It is a cross-sectional view showing a method for manufacturing a mask in a fifth comparative embodiment.

[0070] Fig.53 It is a cross-sectional view showing a method for manufacturing a mask in a fifth comparative embodiment.

[0071] Fig.54 It is a cross-sectional view showing a method for manufacturing a mask in a fifth comparative embodiment.

[0072] Fig.55 It is a diagram showing a cross section of a mask in a fifth comparative embodiment. DETAILED DESCRIPTION

[0073] In the present specification and the drawings, unless otherwise specified, terms such as “plate”, “sheet”, and “film” that mean a material serving as a basis of a certain structure are not distinguished from each other merely based on differences in name.

[0074] In this specification and the drawings, unless otherwise specified, terms such as "parallel" and "orthogonal" that determine shapes, geometric conditions and their degrees, or values ​​of lengths and angles, are not restricted to strict meanings and are interpreted within a range that includes the same function.

[0075] In this specification and the drawings, unless otherwise specified, the following situations are included: a certain structure of a certain component or region is located "on", "below", "upper side", "lower side", or "above", "below" of other structures of other components or other regions; and a certain structure is directly connected to other structures. Furthermore, it also includes a situation where other structures are included between a certain structure and other structures, that is, a situation where they are indirectly connected. In addition, unless otherwise specified, the up and down directions may be reversed in sentences such as "on", "upper side", "above", or "down", "lower side", "below".

[0076] In this specification and the drawings, unless otherwise specified, the same or similar reference numerals are used for the same parts or parts having the same functions, and their repeated descriptions are sometimes omitted. In addition, for the sake of convenience of description, the dimensional ratios of the drawings are sometimes different from the actual ratios, and sometimes a part of the structure is omitted from the drawings.

[0077] In this specification and the drawings, unless otherwise specified, one embodiment of the present specification can be combined with other embodiments within the scope that no contradiction occurs. In addition, other embodiments can also be combined with each other within the scope that no contradiction occurs.

[0078] In this specification and the accompanying drawings, unless otherwise specified, when two or more steps or processes are disclosed in relation to a method such as a manufacturing method, other undisclosed steps or processes may be implemented between the disclosed steps or processes. In addition, the order of the disclosed steps or processes is arbitrary within the scope of no contradiction.

[0079] In this specification and the drawings, unless otherwise specified, a numerical range expressed by a symbol such as "to" includes the numerical values ​​placed before and after the symbol such as "to". For example, a numerical range defined by a statement such as "34 to 38 mass %" is the same as a numerical range defined by a statement such as "34 mass % or more and 38 mass % or less".

[0080] In one embodiment of the present specification, the following example is described: a mask is used to form an organic layer or electrode on a substrate when manufacturing an organic EL display device. However, the use of the mask is not particularly limited, and this embodiment can be applied to masks used for various purposes. For example, the mask of this embodiment can also be used to form a constituent element of a device that is used to display or project an image or video for representing virtual reality (so-called VR) or augmented reality (so-called AR). For example, the mask of this embodiment can also be used to form constituent elements of a display device other than an organic EL display device, such as electrodes of a liquid crystal display device. For example, the mask of this embodiment can also be used to form constituent elements of a device other than a display device, such as electrodes of a pressure sensor.

[0081] The first method of the present disclosure is a mask comprising a plurality of through holes, characterized in that the mask comprises: a metal plate comprising a first surface and a second surface located on the opposite side of the first surface in a thickness direction; and a wall surface facing the through holes, comprising a first end located on the first surface and a second end located on the opposite side of the first end in the thickness direction, the first end being located closer to the inside than the second end, the wall surface comprising: a first wall surface located between a first imaginary point where a first imaginary straight line and the wall surface intersect and the first end; and a second wall surface located between the first imaginary point and the second end, the first imaginary straight line being an imaginary straight line passing through the first end and the second end, the first imaginary straight line The wall surface includes a portion located at an inner side than the first imaginary straight line, the wall surface has a second dimension, the second dimension is the distance between the first end and a second imaginary point where the second imaginary straight line intersects the first surface, the second imaginary straight line is an imaginary straight line passing through the second end and extending in the thickness direction, the first wall surface has a third dimension, the third dimension is the distance between the first imaginary straight line and a third imaginary straight line in the in-plane direction of the first surface, the third imaginary straight line is an imaginary straight line extending parallel to the first imaginary straight line and tangent to the first wall surface, and the ratio of the third dimension to the second dimension is less than 0.120.

[0082] A second aspect of the present disclosure may be that, in the mask of the first aspect, the mask has the following structure: A ratio of the third dimension to the second dimension may be 0.030 or more.

[0083] A third aspect of the present disclosure may be that, in the mask of the first aspect or the second aspect, the mask has the following structure: A third imaginary point, which is a point where the third imaginary straight line is tangent to the first wall surface, may be located outside the first end.

[0084] A fourth aspect of the present disclosure may be that, in any one of the first to third aspects, the mask has the following structure: the wall surface may have a reference height, the reference height being the distance between the first end and the second end in the thickness direction, and the ratio of the second dimension to the reference height may be less than 1.00.

[0085] The fifth aspect of the present disclosure may be that, in the mask of the third aspect or the fourth aspect, the mask has the following structure: the first wall surface may include: an 11th wall surface located between the third imaginary point and the first end; and a 12th wall surface located between the third imaginary point and the first imaginary point; the 11th wall surface may include a portion located at an inner side than the seventh imaginary straight line; and the seventh imaginary straight line may be an imaginary straight line passing through the first end and the third imaginary point.

[0086] The sixth aspect of the present disclosure may be that, in the mask of the fifth aspect, the following structure is provided: the 12th wall surface may include the 3A2 imaginary point, the 3A2 imaginary point may be an imaginary point where the 3A imaginary straight line intersects the 12th wall surface, the 3A imaginary straight line may be an imaginary straight line obtained by shifting the 3rd imaginary straight line inward by the amount of the first allowable error, the first allowable error may be 0.10 μm, and the ratio of the distance between the 3rd imaginary point and the 3A2 imaginary point in the thickness direction to the first allowable error may be 1.0 or more.

[0087] The seventh aspect of the present disclosure may be that, in any one of the above-mentioned first to sixth aspects, the mask has the following structure. Alternatively, the wall surface has a third height, the third height being the distance between the first end and a third imaginary point in the thickness direction, the third imaginary point being the point at which the third imaginary straight line is tangent to the first wall surface, and the ratio of the third dimension to the third height is less than 1.00.

[0088] The eighth aspect of the present disclosure may be that in any one of the first to seventh aspects, the mask has the following structure: the plurality of through holes may be arranged in the first direction and the second direction when viewed from above, or the second size and the third size may be determined in a cross section of the mask cut along a surface inclined at an angle of 45 degrees relative to the first direction.

[0089] A ninth aspect of the present disclosure may be that, in the mask of any one of the first to eighth aspects, the second end may include two 21st sides facing each other in the second direction, or each of the two 21st sides may include a straight line portion.

[0090] The tenth aspect of the present disclosure may be that, in the mask of the ninth aspect, the mask has the following structure: the plurality of through holes may include a first through hole and a second through hole adjacent to the first through hole in the second direction, or one of the 21st sides of the first through hole may merge with one of the 21st sides of the first through hole.

[0091] The 11th mode of the present disclosure may be that in the mask of the above-mentioned 10th mode, the following structure is provided. The wall surface may have a confluence height, and the confluence height is the distance between the first end and the confluence portion in the thickness direction, wherein the confluence portion is a confluence portion where one of the 21st sides of the first through hole and one of the 21st sides of the first through hole merge, or the ratio of the confluence height to the thickness of the metal plate may be greater than 0.50.

[0092] A twelfth aspect of the present disclosure may be that, in the mask of any one of the first to eleventh aspects, the second end may include two 22nd sides facing each other in the first direction, or each of the two 22nd sides may include a straight line portion.

[0093] The 13th aspect of the present disclosure may be that, in the mask of the 12th aspect, the mask has the following structure: the plurality of through holes may include a first through hole and a third through hole adjacent to the first through hole in the first direction, or the 22nd side of the first through hole may merge with the 22nd side of the third through hole.

[0094] The 14th embodiment of the present disclosure is a method for manufacturing a mask, wherein the mask includes a plurality of through holes, and is characterized in that the method for manufacturing the mask comprises: a process for preparing a metal plate, wherein the metal plate includes a first surface and a second surface located on the opposite side of the first surface in the thickness direction; a resist pattern forming process, wherein a first resist pattern is formed on the first surface of the metal plate, and a second resist pattern is formed on the second surface of the metal plate; a first etching process, wherein a plurality of first recesses are formed on the first surface by etching the first surface; a filling process, wherein a resin is filled in the first recesses; and a second etching process, wherein a plurality of second recesses are formed on the second surface by etching the second surface, wherein in the second etching process, the plurality of second recesses are respectively connected to the corresponding first recesses, and in the second etching process, a groove is formed between the metal plate and the resin.

[0095] A fifteenth aspect of the present disclosure may be that, in the mask manufacturing method of the fourteenth aspect, the mask manufacturing method includes the following structure: In the second etching step, the surface of the resin may be dissolved in an etching solution.

[0096] A sixteenth aspect of the present disclosure may be the method for manufacturing a mask according to the fourteenth aspect or the fifteenth aspect, wherein the method comprises the following structure. It may be that the mask includes a wall surface facing the through hole, the wall surface includes: a first end located on the first surface; and a second end located on the opposite side of the first end in the thickness direction, the first end may be located at a position closer to the inside than the second end, the wall surface may include: a first wall surface located between a first imaginary point where a first imaginary straight line and the wall surface intersect and the first end; and a second wall surface located between the first imaginary point and the second end, the first imaginary straight line may be an imaginary straight line passing through the first end and the second end, the first wall surface may include a portion located closer to the inside than the first imaginary straight line, the point at which a third imaginary straight line is tangent to the first wall surface, i.e., the third imaginary point, does not touch the resin, and the third imaginary straight line may be an imaginary straight line extending parallel to the first imaginary straight line and tangent to the first wall surface.

[0097] A seventeenth aspect of the present disclosure may be the method for manufacturing a mask according to the sixteenth aspect, wherein the method comprises the following configuration: A distance between the third imaginary point and the resin in the in-plane direction of the first surface may be 0.5 μm or more.

[0098] An eighteenth aspect of the present disclosure may be the method for manufacturing a mask according to the sixteenth aspect or the seventeenth aspect, wherein the method comprises the following structure: The third imaginary point may be located outside the first end.

[0099] The 19th aspect of the present disclosure may be that in the method for manufacturing a mask of any one of the 14th to 18th aspects, the method comprises the following structure: the second surface may include a rib located between two adjacent through holes when viewed from above, and the rib may be a portion of the second surface that is not etched in the second etching step.

[0100] The 20th aspect of the present disclosure may be that in the method for manufacturing a mask of any one of the 16th to 18th aspects, the method comprises the following structure. The plurality of through holes may be arranged in the first direction and the second direction when viewed from above, the second end may include two 21st sides facing each other in the second direction, the plurality of through holes may include a first through hole and a second through hole adjacent to the first through hole in the second direction, one of the 21st sides of the first through hole may merge with one of the 21st sides of the first through hole, the wall surface may have a merge height, the merge height being the distance between the first end and the merge portion in the thickness direction, wherein the merge portion is a merge portion where one of the 21st sides of the first through hole merges with one of the 21st sides of the first through hole, and the ratio of the merge height to the thickness of the metal plate may be 0.50 or more.

[0101] One embodiment of the present disclosure will be described in detail with reference to the drawings. In addition, the embodiment described below is an example of the embodiment of the present disclosure, and the present disclosure is not limited to these embodiments.

[0102] The organic device 100 will be described. The organic device 100 includes an organic layer or an electrode formed by using a mask. Figure 1 1 is a plan view showing an example of the organic device 100 when viewed along the normal direction of the substrate of the organic device 100. In the following description, viewing along the normal direction of the surface of a base material such as a substrate is also referred to as a plan view.

[0103] The organic device 100 includes a substrate and a plurality of elements 115 arranged along the in-plane direction of the substrate. The elements 115 are, for example, pixels. Figure 2 1 is an enlarged plan view of the organic device 100. The elements 115 may also be arranged in two different directions. Figure 3 It is along Figure 2 Cross-sectional view along line III-III.

[0104] The organic device 100 may include a substrate 110, a plurality of first electrodes 120, a plurality of organic layers 130, and a second electrode 140. The substrate 110 includes a first surface 111 and a second surface 112. The second surface 112 is located on the opposite side of the first surface 111.

[0105] A plurality of first electrodes 120 may be located on the first surface 111. A plurality of organic layers 130 may be located on the first electrode 120. A second electrode 140 may be located on the organic layer 130. The second electrode 140 may also extend in a manner overlapping with the plurality of first electrodes 120 when viewed from above. The element 115 is composed of a stacked structure including the first electrode 120, the organic layer 130, and the second electrode 140. By applying a voltage between the first electrode 120 and the second electrode 140, or by flowing a current between the first electrode 120 and the second electrode 140, the element 115 can achieve a certain function.

[0106] The organic device 100 may be an active matrix type. For example, although not shown, the organic device 100 may also include switches electrically connected to the plurality of elements 115. The switch is, for example, a transistor. The switch can control the on / off of a voltage applied to the element 115 or a current flowing through the element 115.

[0107] like Figure 2 and Figure 3 As shown, the plurality of organic layers 130 may include a plurality of first organic layers 130A, a plurality of second organic layers 130B, and a plurality of third organic layers 130C. The first organic layer 130A, the second organic layer 130B, and the third organic layer 130C are, for example, a red light emitting layer, a blue light emitting layer, and a green light emitting layer. When describing the common structure of the first organic layer 130A, the second organic layer 130B, and the third organic layer 130C, the term "organic layer 130" and the reference numeral are used.

[0108] like Figure 2 and Figure 3 As shown, the plurality of first electrodes 120 may include a plurality of 1A electrodes 120A, a plurality of 1B electrodes 120B, and a plurality of 1C electrodes 120C. The 1A electrodes 120A overlap with the first organic layer 130A when viewed from above. The 1B electrodes 120B overlap with the second organic layer 130B when viewed from above. The 1C electrodes 120C overlap with the third organic layer 130C when viewed from above. When describing the structure common to the 1A electrodes 120A, the 1B electrodes 120B, and the 1C electrodes 120C, the term “first electrode 120” and the reference numeral are used.

[0109] One element 115 may include at least one first sub-element 115A, at least one second sub-element 115B, and at least one third sub-element 115C. The first sub-element 115A includes a first electrode 120A, a first organic layer 130A, and a second electrode 140. The second sub-element 115B includes a first electrode 120B, a second organic layer 130B, and a second electrode 140. The third sub-element 115C includes a first electrode 120C, a third organic layer 130C, and a second electrode 140. Figure 2 In the example shown, one element 115 includes one first sub-element 115A, one second sub-element 115B, and two third sub-elements 115C.

[0110] The element formed by using a mask may be the organic layer 130 or the second electrode 140. The element formed by using a mask is also referred to as a vapor deposition layer.

[0111] The organic device 100 may include an insulating layer 160 located between two adjacent first electrodes 120 in a plan view. The insulating layer 160 includes, for example, polyimide. The insulating layer 160 may overlap with an end portion of the first electrode 120 in a plan view.

[0112] The constituent elements of the organic device 100 will be described in detail.

[0113] The substrate 110 may also be a plate-shaped component having insulating properties. The substrate 110 preferably has transparency to allow light to pass through. As the material of the substrate 110, for example, a rigid material without flexibility such as quartz glass, Pyrex (registered trademark) glass, or a synthetic quartz plate, or a flexible material with flexibility such as a resin film, an optical resin plate, or thin glass, etc. can be used. The substrate 110 may be a laminate having a barrier layer on one or both sides of a resin film.

[0114] The element 115 is configured to achieve a certain function by applying a voltage between the first electrode 120 and the second electrode 140 or by flowing a current between the first electrode 120 and the second electrode 140. For example, when the element 115 is a pixel of an organic EL display device, the element 115 emits light constituting an image.

[0115] The first electrode 120 includes a conductive material. For example, the first electrode 120 includes a metal, a conductive metal oxide, or other conductive inorganic materials. The first electrode 120 may include a transparent and conductive metal oxide such as indium tin oxide (ITO) or indium zinc oxide (IZO).

[0116] The organic layer 130 includes an organic material. If the organic layer 130 is energized, the organic layer 130 can perform certain functions. Energizing means applying a voltage to the organic layer 130 or flowing a current through the organic layer 130. As the organic layer 130, a light-emitting layer that emits light by energizing can be used. The organic layer 130 can include an organic semiconductor material. The properties of the organic layer 130, such as the transmittance and the refractive index, can be appropriately adjusted.

[0117] When a voltage is applied between the first electrode 120 and the second electrode 140 , the organic layer 130 located therebetween is driven. When the organic layer 130 is a light-emitting layer, light is emitted from the organic layer 130 and is extracted to the outside from the second electrode 140 side or the first electrode 120 side.

[0118] The organic layer 130 may further include a hole injection layer, a hole transport layer, an electron transport layer, an electron injection layer, a charge generation layer, and the like.

[0119] The second electrode 140 includes a conductive material such as a metal. The second electrode 140 is formed on the organic layer 130 by a vapor deposition method using a mask. As a material constituting the second electrode 140, platinum, gold, silver, copper, iron, tin, chromium, aluminum, indium, lithium, sodium, potassium, calcium, magnesium, indium tin oxide (ITO), indium zinc oxide (IZO), carbon, etc. can be used. These materials can be used alone or in combination of two or more. When using more than two materials, layers composed of each material can also be stacked. In addition, an alloy containing two or more materials can also be used. For example, magnesium alloys such as MgAg, aluminum alloys such as AlLi, AlCa, and AlMg can be used. MgAg is also called magnesium silver. Magnesium silver is preferably used as the material of the second electrode 140. Alkali metal alloys and alkaline earth metal alloys can also be used. For example, lithium fluoride, sodium fluoride, potassium fluoride, etc. can also be used.

[0120] The second electrode 140 may be a common electrode. For example, the second electrode 140 of one element 115 may be electrically connected to the second electrode 140 of another element 115 .

[0121] like Figure 2 and Figure 3 As shown, the second electrode 140 may be extended so as to overlap with the plurality of first electrodes 120. For example, the second electrode 140 may be extended over the entire display region of the organic device 100 in a plan view.

[0122] In the method for manufacturing the organic device 100, the Figure 4 The organic device group 102 shown. The organic device group 102 includes more than two organic devices 100. For example, the organic device group 102 may include organic devices 100 arranged in the x direction Dx and the y direction Dy. The y direction Dy is a direction orthogonal to the x direction Dx. The more than two organic devices 100 may have a common substrate 110. For example, the organic device group 102 may be located on a substrate 110 and include layers such as a first electrode 120, an organic layer 130, and a second electrode 140 constituting the more than two organic devices 100. The organic device 100 is obtained by dividing the organic device group 102.

[0123] The x direction Dx may be the long side direction of a mask described later.

[0124] Next, a method of forming a vapor deposition layer such as the organic layer 130 by vapor deposition will be described. Figure 5 1 is a diagram showing a vapor deposition device 10 . The vapor deposition device 10 performs a vapor deposition process for vapor-depositing a vapor deposition material on a substrate 110 .

[0125] like Figure 5 As shown, the evaporation device 10 may also include a evaporation source 6, a heater 8, and a mask device 15 therein. In addition, the evaporation device 10 may also include an exhaust unit for making the interior of the evaporation device 10 a vacuum atmosphere. The evaporation source 6 is, for example, a crucible, which contains a evaporation material 7 such as an organic material or a metal material. The heater 8 heats the evaporation source 6 to evaporate the evaporation material 7 in a vacuum atmosphere. The mask device 15 is arranged in a manner opposite to the crucible 6.

[0126] like Figure 5 As shown, the mask device 15 includes at least one mask 50. The mask device 15 may also include a mask support 40 that supports the mask 50. The mask support 40 may also include a frame 41 including an opening 43. The mask 50 may also be fixed to the frame 41 in a manner that crosses the opening 43 when viewed from above. The frame 41 may also support the mask 50 in a stretched state in the surface direction thereof to suppress the mask 50 from bending.

[0127] like Figure 5 As shown, the mask device 15 is arranged in the vapor deposition device 10 in a manner that the mask 50 faces the first surface 111 of the substrate 110. The mask 50 includes a plurality of through holes 56 for passing the vapor deposition material 7 flying from the vapor deposition source 6. In the following description, the surface of the mask 50 facing the substrate 110 is referred to as the first surface 551. The surface of the mask 50 located on the opposite side of the first surface 551 in the thickness direction of the mask 50 is referred to as the second surface 552.

[0128] like Figure 5 As shown, the evaporation device 10 may also include a substrate holder 2 for holding the substrate 110. The substrate holder 2 may also be able to move in the thickness direction of the substrate 110. The substrate holder 2 may also be able to move in the surface direction of the substrate 110. The substrate holder 2 may also be configured to control the inclination of the substrate 110. For example, the substrate holder 2 may also include a plurality of chucks mounted on the outer edge of the substrate 110. Each chuck may also be able to move independently in the thickness direction or the surface direction of the substrate 110.

[0129] By moving at least one of the substrate holder 2 and the mask holder 3 , the position of the mask 50 relative to the substrate 110 can be adjusted.

[0130] like Figure 5As shown, the vapor deposition device 10 may include a cooling plate 4 disposed on the second surface 112 side of the substrate 110. The cooling plate 4 may include a flow path for circulating a refrigerant inside the cooling plate 4. The cooling plate 4 can suppress a temperature rise of the substrate 110 during the vapor deposition process.

[0131] like Figure 5 As shown, the evaporation device 10 may also include a magnet 5 disposed on the second surface 112 side of the substrate 110. The magnet 5 may also be disposed on the surface of the cooling plate 4 away from the substrate 110. The magnet 5 can attract the mask 50 to the substrate 110 side by magnetic force. Thus, the gap between the mask 50 and the substrate 110 can be reduced or eliminated. Thus, the generation of shadows in the evaporation process can be suppressed. The shape of the evaporation layer is the thickness of the evaporation layer, the size of the evaporation layer when viewed from above, etc. An electrostatic chuck using electrostatic force can also be used to attract the mask 50 to the substrate 110 side.

[0132] Figure 6 5 is a top view showing the mask device 15 as viewed from the first surface 551 side. The mask device 15 may also include: a mask support body 40 including a frame 41; and a mask 50 fixed to the frame 41. The mask device 15 may also include two or more masks 50 arranged in the y direction Dy. In order to suppress the deflection of the mask 50, the frame 41 supports the mask 50 in a state where tension is applied to the mask 50 in the x direction Dx.

[0133] The frame 41 may include a pair of first sides 411 extending in the x direction Dx, a pair of second sides 412 extending in the y direction Dy, and an opening 43. The second side 412 may be longer than the first side 411. The pair of first sides 411 and the pair of second sides 412 are in contact with the opening 43 in a plan view.

[0134] The mask 50 may include a first side edge 501 and a second side edge 502 extending in the x-direction Dx, and a first end 503 and a second end 504. The first end 503 and the second end 504 are ends of the mask 50 in the x-direction Dx.

[0135] In a plan view, the mask 50 includes a first end 51a, a second end 51b, and a middle portion 52. The first end 51a and the second end 51b face each other in the x-direction Dx. The middle portion 52 is located between the first end 51a and the second end 51b. The middle portion 52 includes a through hole group 53.

[0136] “Viewed from above” means observing the object along the thickness direction of the mask 50 .

[0137] The mask 50 is fixed to the second side 412. Specifically, the first end 51a is fixed to the first second side 412, and the second end 51b is fixed to the second second side 412. The first end 51a and the second end 51b may be fixed to the first second side 412 and the second second side 412 by welding. The middle portion 52 overlaps with the opening 43 of the frame 41 in a plan view.

[0138] Figure 7 is a top view showing an example of the mask 50. The through hole group 53 of the middle portion 52 includes a plurality of through holes 56 regularly arranged in a top view. The through holes 56 may also be arranged periodically in two directions. For example, the through holes 56 may also be arranged periodically in the x direction Dx and the y direction Dy.

[0139] One through hole group 53 corresponds to one organic device 100. For example, a plurality of first organic layers 130A included in one organic device 100 are formed of a vapor-deposited material passing through a plurality of through holes 56 of one through hole group 53. The mask 50 includes at least one through hole group 53. The mask 50 may also include two or more through hole groups 53 arranged in the x direction Dx.

[0140] The mask 50 will be described in detail. Figure 8 It is a perspective view showing an example of the through hole group 53 on the second surface 552 of the mask 50 . Fig. 9 It is a cross-sectional view showing an example of the through-hole group 53 . Fig. 9 It is along Figure 8 A cross-sectional view taken along line IX-IX.

[0141] The mask 50 includes a metal plate 55. The metal plate 55 includes a first surface 551 and a second surface 552. Each through hole 56 of the through hole group 53 penetrates from the first surface 551 to the second surface 552.

[0142] The mask 50 includes a plurality of wall surfaces 57. The plurality of wall surfaces 57 face the through hole 56, respectively. The wall surface 57 is generated by forming the through hole 56 in the metal plate 55. The wall surface 57 includes a first end 58 and a second end 59. The first end 58 may be located on the first surface 551. The first end 58 may also constitute the outline of the through hole 56 in the top view of the first surface 551 of the mask 50. The second end 59 is located on the opposite side of the first end 58 in the thickness direction Et. The thickness direction Et is a direction perpendicular to the first surface 551. The second end 59 may also constitute the outline of the through hole 56 in the top view of the second surface 552 of the mask 50. The second end 59 may also surround the first end 58 when viewed from above. The second end 59 may also be located on the second surface 552.

[0143] In this specification, the term "first surface 551" used in relation to the mask 50 refers to an area of ​​the first surface 551 of the metal plate 55 that is not etched by the first etching process described later. In this specification, the term "second surface 552" used in relation to the mask 50 refers to an area of ​​the second surface 552 of the metal plate 55 that is not etched by the second etching process described later.

[0144] like Figure 8 and Fig. 9 As shown, the second surface 552 of the mask 50 may also include a rib 553. The rib 553 is a region of the second surface 552 located between two adjacent through holes 56 when viewed from above. The rib 553 is generated in the following manner: the region of the second surface 552 located between the two through holes 56 is not etched by the second etching step described later and remains.

[0145] The first end 58 may be located inside the second end 59. The "inner side" refers to the side closer to the center point C3 of the through hole 56 in a plan view. The "outer side" described below refers to the side farther from the center point C3 of the through hole 56 in a plan view.

[0146] The materials of the metal plate 55 and the frame 41 are described. As the main material of the mask 50 and the frame 41, an iron alloy containing nickel can be used. As a result, the difference between the thermal expansion coefficient of the mask 50 and the frame 41 and the thermal expansion coefficient of the substrate 110 containing glass can be reduced. Therefore, it is possible to suppress the following situation: the dimensional accuracy or position accuracy of the vapor deposition layer formed on the substrate 110 is reduced due to the thermal expansion of the mask 50, the frame 41, the substrate 110, etc.

[0147] The content of nickel in the ferroalloy may be, for example, 28% by mass or more, 30% by mass or more, or 34% by mass or more. The content of nickel in the ferroalloy may be, for example, 38% by mass or less, 44% by mass or less, or 54% by mass or less. The range of the content of nickel in the ferroalloy may be determined by the first group consisting of 28%, 30% by mass, and 34% by mass and / or the second group consisting of 38%, 44% by mass, and 54% by mass. The range of the content of nickel in the ferroalloy may be determined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of the content of nickel in the ferroalloy may be determined by a combination of any two of the values ​​included in the first group. The range of the content of nickel in the ferroalloy may be determined by a combination of any two of the values ​​included in the second group. The nickel content in the iron alloy can be, for example, from 28 mass % to 54 mass %, from 28 mass % to 44 mass %, from 28 mass % to 38 mass %, from 28 mass % to 34 mass %, from 28 mass % to 30 mass %, from 30 mass % to 54 mass %, from 30 mass % to 44 mass %, from 30 mass % to 38 mass %, from 30 mass % to 34 mass %, from 34 mass % to 54 mass %, from 34 mass % to 44 mass %, from 34 mass % to 38 mass %, from 38 mass % to 54 mass %, from 38 mass % to 44 mass %, or from 44 mass % to 54 mass %.

[0148] The iron alloy may contain cobalt in addition to nickel. For example, as the material of the metal plate 55 of the mask 50, an iron alloy containing 28 mass % to 54 mass % in total nickel and cobalt and 0 mass % to 6 mass % cobalt may be used.

[0149] The content of nickel and cobalt in the metal plate 55 can be 28% by mass or more and 38% by mass or less in total. In this case, as specific examples of the iron alloy containing nickel or nickel and cobalt, there can be listed: Invar alloy material, super Invar alloy material, super Invar alloy material, etc. Invar alloy material is an iron alloy containing 34% by mass or more and 38% by mass of nickel, and the balance of iron and inevitable impurities. Super Invar alloy material is an iron alloy containing 30% by mass or more and 34% by mass of nickel, cobalt, the balance of iron and inevitable impurities. Super Invar alloy material is an iron alloy containing 28% by mass or more and 34% by mass of nickel, 2% by mass or more and 7% by mass of cobalt, 0.1% by mass or more and 1.0% by mass of manganese, 0.10% by mass or less of silicon, 0.01% by mass or less of carbon, the balance of iron and inevitable impurities.

[0150] During the evaporation process, when the temperatures of the mask 50, the frame 41, and the substrate 110 do not reach a high temperature, it is not particularly necessary to make the thermal expansion coefficients of the mask 50 and the frame 41 equal to the thermal expansion coefficient of the substrate 110. In this case, as a material constituting the metal plate 55, a material other than the above-mentioned iron alloy may be used. For example, an iron alloy other than the above-mentioned iron alloy containing nickel, etc., may be used. As an iron alloy containing chromium, for example, an iron alloy called so-called stainless steel can be used. In addition, alloys other than iron alloys, such as nickel and nickel-cobalt alloys, may also be used.

[0151] The mask 50 has a thickness T0. The thickness T0 is the distance between the first surface 551 and the second surface 552 in the thickness direction Et. The thickness T0 may be, for example, 8 μm or more, 10 μm or more, 15 μm or more, or 20 μm or more. The thickness T0 may be, for example, 25 μm or less, 30 μm or less, 50 μm or less, or 80 μm or less. The range of the thickness T0 may be determined by the first group consisting of 8 μm, 10 μm, 15 μm, and 20 μm and / or the second group consisting of 25 μm, 30 μm, 50 μm, and 80 μm. The range of the thickness T0 may also be determined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of the thickness T0 may also be determined by a combination of any two of the values ​​included in the first group. The range of the thickness T0 may also be determined by a combination of any two of the values ​​included in the second group. The thickness T0 may be, for example, 8 μm to 80 μm, 8 μm to 50 μm, 8 μm to 30 μm, 8 μm to 25 μm, 8 μm to 20 μm, 8 μm to 15 μm, 8 μm to 10 μm, 10 μm to 80 μm, 10 μm to 50 μm, 10 μm to 30 μm, 10 μm to 25 μm, 10 μm to 20 μm, 10 μm to 15 μm, 15 μm to 80 μm, The thickness T0 of the mask 50 may be greater than or equal to 15 μm and less than 50 μm, greater than or equal to 15 μm and less than 30 μm, greater than or equal to 15 μm and less than 25 μm, greater than or equal to 15 μm and less than 20 μm, greater than or equal to 20 μm and less than 80 μm, greater than or equal to 20 μm and less than 50 μm, greater than or equal to 20 μm and less than 30 μm, greater than or equal to 20 μm and less than 25 μm, greater than or equal to 25 μm and less than 80 μm, greater than or equal to 25 μm and less than 30 μm, greater than or equal to 30 μm and less than 80 μm, greater than or equal to 30 μm and less than 50 μm, or greater than or equal to 50 μm and less than 80 μm. The thickness T0 of the mask 50 may also be the thickness of the metal plate 55.

[0152] By setting the thickness T0 to be 80 μm or less, it is possible to prevent the deposition material 7 from adhering to the wall surface 57 of the through hole 56 before the deposition material 7 passes through the through hole 56. This can improve the utilization efficiency of the deposition material 7. In addition, by setting the thickness T0 to be 8 μm or more, the strength of the mask 50 can be ensured, and damage and deformation of the mask 50 can be prevented.

[0153] As a method for measuring the thickness T0, a contact measurement method is adopted. Specifically, the thickness T0 is measured by a high-precision digital length measuring instrument Litematic VL-50S manufactured by Mitutoyo Corporation.

[0154] Fig.10 It is a plan view showing an example of the through-hole group 53 in the first surface 551 . Fig.11 : is a top view showing an example of the through hole group 53 in the second surface 552. The plurality of through holes 56 of the through hole group 53 may also be arranged in the first direction E1 and the second direction E2. The second direction E2 is a direction different from the first direction E1. The second direction E2 may also be a direction orthogonal to the first direction E1.

[0155] The first direction E1 and the second direction E2 are determined based on the arrangement pitch of the plurality of second ends 59. The first direction E1 and the second direction E2 are two directions in which the arrangement pitch of the plurality of second ends 59 becomes the smallest. Fig.11 As shown, the plurality of second ends 59 are arranged at a first pitch P21 in the first direction E1. In the second direction E2, the plurality of second ends 59 are arranged at a second pitch P22. The first pitch P21 and the second pitch P22 are smaller than the arrangement pitch of the plurality of second ends 59 in directions other than the first direction E1 and the second direction E2. For example, the first pitch P21 and the second pitch P22 are smaller than the arrangement pitch of the plurality of second ends 59 in the third direction E3 and the fourth direction E4. The plurality of second ends 59 are also arranged in the third direction E3 and the fourth direction E4. The third direction E3 and the fourth direction E4 are inclined relative to the first direction E1 and the second direction E2. The inclination angle of the third direction E3 relative to the first direction E1 may also be 45 degrees. The inclination angle of the fourth direction E4 relative to the second direction E2 may also be 45 degrees.

[0156] The first pitch P21 and the second pitch P22 are determined according to the distribution density of the vapor-deposited layer formed on the substrate 110. The first pitch P21 and the second pitch P22 may be, for example, greater than 15 μm, greater than 30 μm, or greater than 60 μm. The first pitch P21 and the second pitch P22 may be, for example, less than 100 μm, less than 150 μm, or less than 250 μm. The range of the first pitch P21 and the second pitch P22 may also be determined by the first group consisting of 15 μm, 30 μm, and 60 μm and / or the second group consisting of 100 μm, 150 μm, and 250 μm. The range of the first pitch P21 and the second pitch P22 may also be determined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of the first pitch P21 and the second pitch P22 may also be determined by a combination of any two of the values ​​included in the first group. The ranges of the first pitch P21 and the second pitch P22 may be determined by a combination of any two of the values ​​included in the second group described above. The first pitch P21 and the second pitch P22 may be, for example, greater than 15 μm and less than 250 μm, greater than 15 μm and less than 150 μm, greater than 15 μm and less than 100 μm, greater than 15 μm and less than 60 μm, greater than 15 μm and less than 30 μm, greater than 30 μm and less than 250 μm, greater than 30 μm and less than 150 μm, greater than 30 μm and less than 100 μm, greater than 30 μm and less than 60 μm, greater than 60 μm and less than 250 μm, greater than 60 μm and less than 150 μm, greater than 60 μm and less than 100 μm, greater than 100 μm and less than 250 μm, greater than 100 μm and less than 150 μm, or greater than 150 μm and less than 250 μm.

[0157] like Fig.10 As shown, the plurality of first ends 58 may be arranged in the first direction E1 and the second direction E2.

[0158] like Fig.10 As shown, the plurality of first ends 58 may also include two 11th sides 581 respectively. The two 11th sides 581 are opposite in the second direction E2. The plurality of first ends 58 may also include two 12th sides 582 respectively. The two 12th sides 582 are opposite in the first direction E1. The first end 58 may also be composed of two 11th sides 581 and two 12th sides 582.

[0159] The 11th side 581 has a size R11. The size R11 is the maximum value of the interval between the two 12th sides 582 in the first direction E1. The 12th side 582 has a size R12. The size R12 is the maximum value of the interval between the two 11th sides 581 in the second direction E2.

[0160] Each of the two 11th sides 581 may include a straight portion extending linearly. The straight portion of the 11th side 581 may extend in the first direction E1. The straight portion of the 11th side 581 has a length R11s.

[0161] The ratio of the length R11s to the dimension R11, i.e., R11s / R11, may be, for example, greater than 0.10, greater than 0.30, or greater than 0.50. R11s / R11 may be, for example, less than 0.80, less than 1.10, or less than 1.50. The range of R11s / R11 may also be determined by the first group consisting of 0.10, 0.30, and 0.50 and / or the second group consisting of 0.80, 1.10, and 1.50. The range of R11s / R11 may also be determined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of R11s / R11 may also be determined by a combination of any two of the values ​​included in the first group. The range of R11s / R11 may also be determined by a combination of any two of the values ​​included in the second group. R11s / R11 may be, for example, greater than or equal to 0.10 and less than or equal to 1.50, greater than or equal to 0.10 and less than or equal to 1.10, greater than or equal to 0.10 and less than or equal to 0.80, greater than or equal to 0.10 and less than or equal to 0.50, greater than or equal to 0.10 and less than or equal to 0.30, greater than or equal to 0.30 and less than or equal to 1.50, greater than or equal to 0.30 and less than or equal to 1.10, greater than or equal to 0.30 and less than or equal to 0.80, greater than or equal to 0.30 and less than or equal to 0.50, greater than or equal to 0.50 and less than or equal to 1.50, greater than or equal to 0.50 and less than or equal to 1.10, greater than or equal to 0.50 and less than or equal to 0.80, greater than or equal to 0.80 and less than or equal to 1.50, greater than or equal to 0.80 and less than or equal to 1.10, or greater than or equal to 1.10 and less than or equal to 1.50.

[0162] Each of the two twelfth sides 582 may include a straight portion extending straightly. The straight portion of the twelfth side 582 may extend in the second direction E2. The straight portion of the twelfth side 582 has a length R12s.

[0163] The numerical range of the ratio of the length R12s to the dimension R12, that is, R12s / R12, may be the same as the numerical range described above regarding R11s / R11.

[0164] The 11th side 581 and the 12th side 582 may be connected. The portion of the first end 58 where the 11th side 581 and the 12th side 582 are connected may be bent.

[0165] The size R11 and the size R12 are determined according to the size of the vapor-deposited layer formed on the substrate 110. The size R11 and the size R12 may be, for example, greater than 10 μm, greater than 25 μm, or greater than 50 μm. The size R11 and the size R12 may be, for example, less than 80 μm, less than 110 μm, or less than 150 μm. The range of the size R11 and the size R12 may be determined by the first group consisting of 10 μm, 25 μm, and 50 μm and / or the second group consisting of 80 μm, 110 μm, and 150 μm. The range of the size R11 and the size R12 may also be determined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of the size R11 and the size R12 may also be determined by a combination of any two of the values ​​included in the first group. The range of the size R11 and the size R12 may also be determined by a combination of any two of the values ​​included in the second group. The size R11 and the size R12 may be, for example, greater than 10 μm and less than 150 μm, greater than 10 μm and less than 110 μm, greater than 10 μm and less than 80 μm, greater than 10 μm and less than 50 μm, greater than 10 μm and less than 25 μm, greater than 25 μm and less than 150 μm, greater than 25 μm and less than 110 μm, greater than 25 μm and less than 80 μm, greater than 25 μm and less than 50 μm, greater than 50 μm and less than 150 μm, greater than 50 μm and less than 110 μm, greater than 50 μm and less than 80 μm, greater than 80 μm and less than 150 μm, greater than 80 μm and less than 110 μm, or greater than 110 μm and less than 150 μm.

[0166] The dimensions of the components appearing on the first surface 551, such as the dimension R11 and the dimension R12, are calculated by observing the through-hole group 53 on the first surface 551. The dimensions of the components appearing on the second surface 552, such as the first pitch P21 and the second pitch P22, are calculated by observing the through-hole group 53 on the second surface 552. AMIC-2500 manufactured by Shinto S Precision Co., Ltd. was used as a measuring instrument.

[0167] The size R11 and the size R12 are calculated by averaging 10 measured values ​​calculated based on the area of ​​the first surface 551 corresponding to the 10 through holes 56. The first pitch P21 and the second pitch P22 are calculated by averaging 10 measured values ​​calculated based on the area of ​​the second surface 552 corresponding to the 10 through holes 56. The 10 through holes 56 are extracted in the same manner as in the case of the observation method of the cross-sectional shape of the mask 50 described later.

[0168] like Fig.11 As shown, the plurality of second ends 59 may also include two 21st sides 591, respectively. The two 21st sides 591 are opposite in the second direction E2. The plurality of second ends 59 may also include two 22nd sides 592, respectively. The two 22nd sides 592 are opposite in the first direction E1. The second end 59 may also be composed of two 21st sides 591 and two 22nd sides 592.

[0169] The 21st side 591 has a size R21. The size R21 is the maximum value of the interval between the two 22nd sides 592 in the first direction E1. The 22nd side 592 has a size R22. The size R22 is the maximum value of the interval between the two 21st sides 591 in the second direction E2.

[0170] The two 21st sides 591 may each include a straight portion extending straightly. The straight portion of the 21st side 591 may extend in the first direction E1. The straight portion of the 21st side 591 has a length R21s.

[0171] The numerical range of the ratio of the length R21s to the dimension R21, ie, R21s / R21, may be the same as the numerical range described above regarding R11s / R11.

[0172] The two 22nd sides 592 may each include a straight portion extending straightly. The straight portion of the 22nd side 592 may extend in the second direction E2. The straight portion of the 22nd side 592 has a length R22s.

[0173] The numerical range of the ratio of the length R22s to the dimension R22, ie, R12s / R12, may be the same as the numerical range described above regarding R11s / R11.

[0174] The 21st side 591 and the 22nd side 592 may be connected. The portion of the second end 59 where the 21st side 591 and the 22nd side 592 are connected may be bent.

[0175] like Fig.11As shown, the rib 553 of the second surface 552 may include a portion located between two second ends 59 adjacent to each other in the first direction E1. The rib 553 of the second surface 552 may include a portion located between two second ends 59 adjacent to each other in the second direction E2. The rib 553 of the second surface 552 may include a portion located between two second ends 59 adjacent to each other in the third direction E3. The portion of the rib 553 located between two second ends 59 adjacent to each other in the third direction E3 may also be located between two second ends 59 adjacent to each other in the fourth direction E4.

[0176] The straight line portions of the first end 58 and the second end 59 will be described. Fig.12 It is a plan view showing an example of the second end 59.

[0177] The straight line portion of the 21st side 591 is a portion of the 21st side 591 located between the straight line SL1 extending in the first direction E1 and the straight line SL2 extending parallel to the straight line SL1. The straight line SL1 is located outside the 21st side 591 and is in contact with the 21st side 591. The straight line SL2 is located inside the straight line SL1. The interval between the straight line SL1 and the straight line SL2 in the second direction E2 is ΔR1. That is, the straight line SL2 is located inside the straight line SL1 and is separated from the straight line SL1 by ΔR1 in the second direction E2. The interval ΔR1 is 3.0 μm.

[0178] The straight line portion of the 22nd side 592 is a portion of the 22nd side 592 located between the straight line SL3 extending in the second direction E2 and the straight line SL4 extending parallel to the straight line SL3. The straight line SL3 is located outside the 22nd side 592 and is in contact with the 22nd side 592. The straight line SL4 is located inside the straight line SL3. The interval between the straight line SL3 and the straight line SL4 in the first direction E1 is ΔR1. That is, the straight line SL4 is located inside the straight line SL3 and is separated from the straight line SL3 by ΔR1 in the first direction E1.

[0179] Although not shown, the straight portion of the 11th side 581 of the first end 58 is defined similarly to the straight portion of the 21st side 591 of the second end 59. That is, the straight portion of the 11th side 581 is a portion of the 11th side 581 located between two straight lines extending in the first direction E1. The interval between the two straight lines is ΔR1.

[0180] Although not shown, the straight portion of the 12th side 582 of the first end 58 is defined similarly to the straight portion of the 22nd side 592 of the second end 59. That is, the straight portion of the 12th side 582 is a portion of the 12th side 582 located between two straight lines extending in the second direction E2. The interval between the two straight lines is ΔR1.

[0181] Next, the cross-sectional shape of the mask 50 will be described. Fig.13 1 is a diagram showing the viewing direction of the cross section of the mask 50. The second dimension, the third dimension, and other dimensions described later are determined in the cross section of the mask 50 cut along the surface Lm. The surface Lm is a surface that is inclined at an angle of 45 degrees with respect to the first direction E1 and is perpendicular to the first surface 551 and the second surface 552. The surface Lm passes through the connection portion where the 21st side 591 and the 22nd side 592 are connected.

[0182] The shape of the cross section of the mask 50 is observed around the 10 through holes 56. The 10 through holes 56 are extracted from the through hole group 53 closest to the center point C1 of the mask 50 in the x direction Dx. The 10 through holes 56 include one through hole 56 closest to the center point C2 of the through hole group 53 when viewed from above. This one through hole 56 is also called the center through hole. The 10 through holes 56 include the center through hole and are arranged along the direction of the plane Lm. The center point C1 and the center point C2 are also Figure 7 Shown in.

[0183] The ten cross sections of the mask 50 are obtained by cutting the mask 50 along a plane Lm passing through the intersection Cm. The intersection Cm is a point where a straight line L1 intersects with a straight line L2, wherein the straight line L1 is tangent to the 21st side 591 and extends in the first direction E1, and the straight line L2 is tangent to the 22nd side 592 and extends in the second direction E2.

[0184] Four intersection points are generated when the second end 59 includes two 21st sides 591 and two 22nd sides 592. The intersection point Cm through which the surface Lm passes is selected so that the distance between the intersection point Cm and the second end 59 becomes the minimum.

[0185] Fig.14A 5 is a diagram showing an example of a cross section of the mask 50 cut along the surface Lm. The wall surface 57 of the mask 50 may also include a first wall surface 571 and a second wall surface 572. The first wall surface 571 is a portion of the wall surface 57 located between the first imaginary point P11 and the first end 58 in the thickness direction Et. The first wall surface 571 may also be located at a position closer to the inside than the first imaginary straight line L11. The first wall surface 571 may also have a curved shape protruding toward the inside. The second wall surface 572 is a portion of the wall surface 57 located between the first imaginary point P11 and the second end 59 in the thickness direction Et. The second wall surface 572 may also be located at a position closer to the outside than the first imaginary straight line L11. The second wall surface 572 may also have a curved shape protruding toward the outside.

[0186] The first imaginary straight line L11 is an imaginary straight line passing through the first end 58 and the second end 59 in the cross-sectional view of the mask 50. The first imaginary point P11 is an imaginary point where the first imaginary straight line L11 intersects the wall surface 57 in the cross-sectional view of the mask 50.

[0187] The wall surface 57 may have a reference height H10. The reference height H10 is the distance between the first end 58 and the second end 59 in the thickness direction Et in the cross-sectional view of the mask 50. When the first end 58 is located on the first surface 551 and the second end 59 is located on the second surface 552, the reference height H10 is equal to the thickness T0 of the mask 50.

[0188] The wall surface 57 may also have a second dimension S12. The second dimension S12 is the distance between the second imaginary point P12 and the first end 58 in the cross-sectional view of the mask 50 in the in-plane direction of the first surface 551. The second imaginary point P12 is an imaginary point where the second imaginary straight line L12 intersects the first surface 551 in the cross-sectional view of the mask 50. The second imaginary straight line L12 is an imaginary straight line that passes through the second end 59 in the cross-sectional view of the mask 50 and extends in the thickness direction Et.

[0189] The design value of the second dimension S12 is determined based on the first inclination angle θ1. The first inclination angle θ1 is the inclination angle of the first imaginary straight line L11 relative to the thickness direction Et. In the vapor deposition process using the mask 50, a portion of the vapor deposition material flying toward the substrate 110 moves in a direction inclined relative to the thickness direction Et. The vapor deposition material moving in a direction inclined relative to the thickness direction Et is also called an inclined component. The larger the first inclination angle θ1 is, the more it is possible to suppress the situation in which the area of ​​the substrate 110 is blocked by the shadow of the wall 57 in the moving direction of the inclined component. That is, the shadow of the mask 50 is suppressed.

[0190] On the other hand, a large first inclination angle θ1 means that the second dimension S12 of the wall surface 57 is large. When the size of the first end 58 is fixed, the larger the second dimension S12 is, the smaller the size of the rib 553 is. For example, the area of ​​the rib 553 is reduced. The smaller the area of ​​the rib 553 is, the lower the strength of the mask 50 is. If the strength of the mask 50 is reduced, defects such as breakage and deformation are likely to occur in the mask 50. For example, it is conceivable that when tension is applied to the mask 50 in the x-direction Dx, local deformation will occur at the connection portion of the second end 59 where the 21st side 591 and the 22nd side 592 are connected. Therefore, it is preferable to determine an appropriate upper limit of the first inclination angle θ1. That is, it is preferable to determine an appropriate upper limit of the ratio of the second dimension S12 to the reference height H10, that is, S12 / H10.

[0191] S12 / H10 may be, for example, greater than 0.50, greater than 0.60, or greater than 0.70. S12 / H10 may be, for example, less than 0.90, less than 1.05, or less than 1.15. The range of S12 / H10 may also be determined by the first group consisting of 0.50, 0.60, and 0.70 and / or the second group consisting of 0.90, 1.05, and 1.15. The range of S12 / H10 may also be determined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of S12 / H10 may also be determined by a combination of any two of the values ​​included in the first group. The range of S12 / H10 may also be determined by a combination of any two of the values ​​included in the second group. S12 / H10 may be, for example, greater than 0.50 and less than 1.15, greater than 0.50 and less than 1.05, greater than 0.50 and less than 0.90, greater than 0.50 and less than 0.70, greater than 0.50 and less than 0.60, greater than 0.60 and less than 1.15, greater than 0.60 and less than 1.05, greater than 0.60 and less than 0.90, greater than 0.60 and less than 0.70, greater than 0.70 and less than 1.15, greater than 0.70 and less than 1.05, greater than 0.70 and less than 0.90, greater than 0.90 and less than 1.15, greater than 0.90 and less than 1.05, or greater than 1.15.

[0192] like Fig.14A As shown, the wall surface 571 may also have a third dimension S13. The third dimension S13 is the distance between the first imaginary straight line L11 and the third imaginary straight line L13 in the in-plane direction of the first surface 551 in the cross-sectional view of the mask 50. The third imaginary straight line L13 is an imaginary straight line extending parallel to the first imaginary straight line L11 in the cross-sectional view of the mask 50 and tangent to the first wall surface 571. The third imaginary straight line L13 is located on the inner side of the first wall surface 571.

[0193] The third dimension S13 may be, for example, greater than 0.50 μm, greater than 1.00 μm, or greater than 1.50 μm. The third dimension S13 may be, for example, less than 3.00 μm, less than 3.50 μm, or less than 4.00 μm. The range of the third dimension S13 may also be determined by the first group consisting of 0.50 μm, 1.00 μm, and 1.50 μm and / or the second group consisting of 3.00 μm, 3.50 μm, and 4.00 μm. The range of the third dimension S13 may also be determined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of the third dimension S13 may also be determined by a combination of any two of the values ​​included in the first group. The range of the third dimension S13 may also be determined by a combination of any two of the values ​​included in the second group. The third size S13 may be, for example, 0.50 μm to 4.00 μm, 0.50 μm to 3.50 μm, 0.50 μm to 3.00 μm, 0.50 μm to 1.50 μm, 0.50 μm to 1.00 μm, 1.00 μm to 4.00 μm, 1.00 μm to 3.50 μm, or 1.00 μm to 4.00 μm. 0μm or more and 3.00μm or less, may be 1.00μm or more and 1.50μm or less, may be 1.50μm or more and 4.00μm or less, may be 1.50μm or more and 3.50μm or less, may be 1.50μm or more and 3.00μm or less, may be 3.00μm or more and 4.00μm or less, may be 3.00μm or more and 3.50μm or less, may be 3.50μm or more and 4.00μm or less.

[0194] The ratio of the third dimension S13 to the second dimension S12, i.e., S13 / S12, can be, for example, greater than 0.010, greater than 0.020, greater than 0.030, or greater than 0.050. S13 / S12 can be, for example, less than 0.080, less than 0.100, less than 0.120, or less than 0.140. The range of S13 / S12 can also be determined by the first group consisting of 0.010, 0.020, 0.030, and 0.050 and / or the second group consisting of 0.080, 0.100, 0.120, and 0.140. The range of S13 / S12 can also be determined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of S13 / S12 can also be determined by a combination of any two of the values ​​included in the first group. The range of S13 / S12 can also be determined by a combination of any two of the values ​​included in the second group. For example, S13 / S12 may be 0.010 to 0.140, 0.010 to 0.120, 0.010 to 0.100, 0.010 to 0.080, 0.010 to 0.050, 0.010 to 0.030, 0.010 to 0.020, 0.020 to 0.140, 0.020 to 0.120, 0.020 to 0.100, 0.020 to 0.080, 0.020 to 0.050, 0.020 to 0.030, 0.030 to 0.1 40 or less, may be 0.030 or more and 0.120 or less, may be 0.030 or more and 0.100 or less, may be 0.030 or more and 0.080 or less, may be 0.030 or more and 0.050 or less, may be 0.050 or more and 0.140 or less, may be 0.050 or more and 0.120 or less, may be 0.050 or more and 0.100 or less, may be 0.050 or more and 0.080 or less, may be 0.080 or more and 0.140 or less, may be 0.080 or more and 0.120 or less, may be 0.080 or more and 0.100 or less, may be 0.100 or more and 0.140 or less, may be 0.100 or more and 0.120 or less, may be 0.120 or more and 0.140 or less.

[0195] An example of the effect achieved by controlling S13 / S12 will be described. Fig.15A1 is a cross-sectional view showing an example of a vapor deposition process. The organic material passing through the through hole 56 of the mask 50 adheres to the substrate 110, thereby forming an organic layer 130. The organic layer 130 includes, for example, a central portion 131 and an end portion 132. The end portion 132 is located outside the central portion 131 in a plan view.

[0196] The boundary between the central portion 131 and the end portion 132 in a plan view is denoted by reference numeral 133 .

[0197] exist Fig.15A , reference numeral F11 indicates a path that is connected to the second end 59 and is inclined at a first inclination angle θ1 with respect to the thickness direction Et. The path F11 overlaps with the first imaginary straight line L11. Reference numeral F13 indicates a path that is tangent to the first wall surface 571 and is inclined at a first inclination angle θ1 with respect to the thickness direction Et. The path F13 overlaps with the third imaginary straight line L13. The end portion 132 of the organic layer 130 is located outside the path F13.

[0198] The organic material moving in the direction of the first inclination angle θ1 in the space between the path F11 and the path F13 does not adhere to the substrate 110 but adheres to the mask 50 . Therefore, the thickness of the end portion 132 is smaller than the thickness of the central portion 131 .

[0199] The third dimension S13 of the wall surface 57 corresponds to the interval between the path F11 and the path F13. The smaller the third dimension S13 is, the smaller the width W1 of the end portion 132 is. In the mask 50 of the present embodiment, since the third dimension S13 is reduced, the width W1 of the end portion 132 is also reduced. That is, the mask 50 of the present embodiment can suppress shadows.

[0200] As described above, the second dimension S12 of the wall surface 57 is a parameter set to suppress the shadow of the mask 50 in exchange for reducing the strength of the mask 50. However, even if the second dimension S12 is set sufficiently large, if the third dimension S13 is large, the shadow of the mask 50 cannot be sufficiently suppressed.

[0201] On the other hand, it is conceivable that if the third dimension S13 is too small, the strength of the mask 50 at the first end 58 becomes too small. The smaller the third dimension S13 is, the smaller the angle between the first wall surface 571 and the first surface 551 at the first end 58 is, and the first wall surface 571 is more likely to be cracked or otherwise broken.

[0202] According to the mask 50 of the present embodiment, by controlling S13 / S12 , it is possible to suppress the shadow of the mask 50 while maintaining the strength of the mask 50 .

[0203] The smaller the third dimension S13 is, the smaller the angle formed by the first wall surface 571 and the first surface 551 at the first end 58 is, so that the dimension change caused by the deviation of the etching amount is likely to occur. For example, the dimensions R11 and R12 are likely to vary. Setting a lower limit for S13 / S12 is also useful in suppressing the deviation of the dimensions R11 and R12.

[0204] The position of the path F13 in the in-plane direction of the first surface 551 may also affect the position of the boundary 133 between the central portion 131 and the end portion 132. Fig.15A As shown, the boundary 133 may also be located on the path F13 or near the path F13. The higher the position accuracy of the path F13, the higher the position accuracy of the boundary 133. That is, the higher the position accuracy of the path F13, the higher the position accuracy of the organic layer 130.

[0205] The position of the third imaginary straight line L13 in the in-plane direction of the first surface 551 is affected by the position of the third imaginary point P13. The position of the third imaginary point P13 in the thickness direction Et is affected by the first etching process and the second etching process described later. For example, the position of the third imaginary point P13 in the thickness direction Et varies due to the deviation of the etching depth in the first etching process and the deviation of the etching depth in the second etching process. In order to improve the position accuracy of the organic layer 130 in the in-plane direction of the first surface 551, it is preferred that the position of the third imaginary straight line L13 in the in-plane direction of the first surface 551 is not easily affected by the position of the third imaginary point P13 in the thickness direction Et.

[0206] like Fig.14A As shown, the wall surface 57 may also have a third height H13. The third height H13 is the distance between the first end 58 and the third imaginary point P13 in the thickness direction Et in the cross-sectional view of the mask 50. The third imaginary point P13 is an imaginary point where the third imaginary straight line L13 is tangent to the wall surface 57 in the cross-sectional view of the mask 50.

[0207] like Fig.14A As shown, the third imaginary point P13 may be located outside the first end 58. That is, in the in-plane direction of the first surface 551, the third imaginary point P13 may be located farther from the center point of the through hole 56 than the first end 58. By locating the third imaginary point P13 outside the first end 58, shadows can be suppressed.

[0208] The ratio of the third dimension S13 to the third height H13, i.e., S13 / H13, can be, for example, greater than 0.30, greater than 0.50, greater than 0.60, or greater than 0.70. S13 / H13 can be, for example, less than 0.80, less than 1.20, less than 1.50, or less than 2.50. The range of S13 / H13 can be determined by the first group consisting of 0.30, 0.50, 0.60, and 0.70 and / or the second group consisting of 0.80, 1.20, 1.50, and 2.50. The range of S13 / H13 can also be determined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of S13 / H13 can also be determined by a combination of any two of the values ​​included in the first group. The range of S13 / H13 can also be determined by a combination of any two of the values ​​included in the second group. S13 / H13 may be, for example, 0.30 to 2.50, 0.30 to 1.50, 0.30 to 1.20, 0.30 to 0.80, 0.30 to 0.70, 0.30 to 0.60, 0.30 to 0.50, 0.50 to 2.50, 0.50 to 1.50, 0.50 to 1.20, 0.50 to 0.80, 0.50 to 0.70, 0.50 to 0.60, 0.60 to 2.50, 0.50 to 1.50, 0.50 to 1.20, 0.50 to 0.80, 0.50 to 0.70, 0.50 to 0.60, 0.60 to 2.50. 50 or less, can be 0.60 or more and 1.50 or less, can be 0.60 or more and 1.20 or less, can be 0.60 or more and 0.80 or less, can be 0.60 or more and 0.70 or less, can be 0.70 or more and 2.50 or less, can be 0.70 or more and 1.50 or less, can be 0.70 or more and 1.20 or less, can be 0.70 or more and 0.80 or less, can be 0.80 or more and 2.50 or less, can be 0.80 or more and 1.50 or less, can be 0.80 or more and 1.20 or less, can be 1.20 or more and 2.50 or less, can be 1.20 or more and 1.50 or more, can be 1.50 or more and 2.50 or less.

[0209] An example of the effect achieved by controlling S13 / H13 will be described. Fig.16 is a cross-sectional view showing an example of a vapor deposition process. Fig.16 In FIG. 1 , reference numeral F12 denotes a path inclined at a second inclination angle θ2 with respect to the thickness direction Et. The second inclination angle θ2 is smaller than the first inclination angle θ1.

[0210] The higher the probability that the organic material moving along the path F12 reaches the substrate 110, the smaller the width W1 of the end portion 132. In the mask 50 of the present embodiment, since S13 / H13 is reduced, the probability of reaching is improved.

[0211] like Fig.14A As shown, the wall surface 57 may also have a fourth dimension S14. The fourth dimension S14 is the distance between the first imaginary straight line L11 and the fourth imaginary straight line L14 in the in-plane direction of the first surface 551 in the cross-sectional view of the mask 50. The fourth imaginary straight line L14 is an imaginary straight line extending parallel to the first imaginary straight line L11 in the cross-sectional view of the mask 50 and tangent to the second wall surface 572. The fourth imaginary straight line L14 is located outside the second wall surface 572.

[0212] Even when the fourth dimension S14 is zero, the attachment of the material moving at the first inclination angle θ1 to the substrate 110 is not hindered by the second wall surface 572. From the viewpoint of the strength of the mask 50, it is preferable that the fourth dimension S14 is smaller. As described later, the mask 50 of this embodiment can achieve both a reduction in the fourth dimension S14 and a reduction in the third dimension S13 compared to the mask of the second comparative embodiment.

[0213] The ratio of the fourth dimension S14 to the second dimension S12, i.e., S14 / S12, can be, for example, greater than 0.020, greater than 0.050, or greater than 0.100. S14 / S12 can be, for example, less than 0.150, less than 0.200, or less than 0.250. The range of S14 / S12 can also be determined by the first group consisting of 0.020, 0.050, and 0.100 and / or the second group consisting of 0.150, 0.200, and 0.250. The range of S14 / S12 can also be determined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of S14 / S12 can also be determined by a combination of any two of the values ​​included in the first group. The range of S14 / S12 can also be determined by a combination of any two of the values ​​included in the second group. S14 / S12 may be, for example, greater than 0.020 and less than 0.250, greater than 0.020 and less than 0.200, greater than 0.020 and less than 0.150, greater than 0.020 and less than 0.100, greater than 0.020 and less than 0.050, greater than 0.050 and less than 0.250, greater than 0.050 and less than 0.200, greater than 0.050 and less than 0.150, greater than 0.050 and less than 0.100, greater than 0.100 and less than 0.250, greater than 0.100 and less than 0.200, greater than 0.100 and less than 0.150, greater than 0.150 and less than 0.250, greater than 0.150 and less than 0.200, and greater than 0.200 and less than 0.250.

[0214] The third dimension S13 mentioned above may also be smaller than the fourth dimension S14. The ratio of the third dimension S13 to the fourth dimension S14, i.e., S13 / S14, may be, for example, greater than 0.10, greater than 0.20, or greater than 0.40. S13 / S14 may be, for example, less than 0.60, less than 0.80, or less than 1.00. The range of S13 / S14 may also be determined by the first group consisting of 0.10, 0.20, and 0.40 and / or the second group consisting of 0.60, 0.80, and 1.00. The range of S13 / S14 may also be determined by a combination of any one of the values ​​included in the first group mentioned above and any one of the values ​​included in the second group mentioned above. The range of S13 / S14 may also be determined by a combination of any two of the values ​​included in the first group mentioned above. The range of S13 / S14 may also be determined by a combination of any two of the values ​​included in the second group mentioned above. S13 / S14 may be, for example, greater than 0.10 and less than 1.00, greater than 0.10 and less than 0.80, greater than 0.10 and less than 0.60, greater than 0.10 and less than 0.40, greater than 0.10 and less than 0.20, greater than 0.20 and less than 1.00, greater than 0.20 and less than 0.80, greater than 0.20 and less than 0.60, greater than 0.20 and less than 0.40, greater than 0.40 and less than 1.00, greater than 0.40 and less than 0.80, greater than 0.40 and less than 0.60, greater than 0.60 and less than 1.00, greater than 0.60 and less than 0.80, and greater than 0.80 and less than 1.00.

[0215] Fig. 14B 1 is a diagram showing an example of the first wall surface 571 of the mask 50 cut along the plane Lm. The first wall surface 571 may also include an eleventh wall surface 5711 and a twelfth wall surface 5712. The eleventh wall surface 5711 is a portion of the first wall surface 571 located between the third imaginary point P13 and the first end 58 in the thickness direction Et. The twelfth wall surface 5712 is a portion of the first wall surface 571 located between the third imaginary point P13 and the first imaginary point P11 in the thickness direction Et.

[0216] The 11th wall surface 5711 may be at least partially located inside the 7th imaginary straight line L17. The entire 11th wall surface 5711 may be located inside the 7th imaginary straight line L17. The 11th wall surface 5711 may have a curved shape protruding inward from the 7th imaginary straight line L17. The 7th imaginary straight line L17 is an imaginary straight line passing through the 1st end 58 and the 3rd imaginary point P13 in the cross-sectional view of the mask 50.

[0217] like Fig. 14B As shown, the first wall surface 571 may also have an eighth dimension S18. The eighth dimension S18 is the distance between the seventh imaginary straight line L17 and the eighth imaginary point P18 in the in-plane direction of the first surface 551 in the cross-sectional view of the mask 50. The eighth imaginary point P18 is an imaginary point at which the eighth imaginary straight line L18 is tangent to the eleventh wall surface 5711 in the cross-sectional view of the mask 50. The eighth imaginary straight line L18 is an imaginary straight line extending parallel to the seventh imaginary straight line L17 and tangent to the eleventh wall surface 5711 in the cross-sectional view of the mask 50. In an embodiment of the present disclosure, the eighth imaginary straight line L18 and the eighth imaginary point P18 are located inside the seventh imaginary straight line L17. In an embodiment of the present disclosure, the eighth imaginary straight line L18 is located inside the eleventh wall surface 5711.

[0218] Along Fig.15A The organic material moving along the path F13 shown in FIG. 1 does not reach the 11th wall surface 5711. The 11th wall surface 5711 is located inside the 7th imaginary straight line L17. This can increase the thickness of the mask 50 around the 1st end 58 compared to the case where the 11th wall surface 5711 is located outside the 7th imaginary straight line L17. Therefore, in order to improve the strength of the mask 50, it is preferable that the 8th dimension S18 is larger. However, it is conceivable that if the 8th dimension S18 is smaller than the 7th imaginary straight line L17, the thickness of the mask 50 around the 1st end 58 can be increased. Fig. 14B becomes too large compared to the state, then the third imaginary straight line L13 mentioned above Fig. 14B The vicinity of the eighth imaginary point P18 is tangent to the wall surface 57. Therefore, the eighth dimension S18 has an upper limit.

[0219] The eighth dimension S18 may be, for example, greater than 0.10 μm, greater than 0.20 μm, or greater than 0.40 μm. The eighth dimension S18 may be, for example, less than 0.80 μm, less than 1.10 μm, or less than 1.50 μm. The range of the eighth dimension S18 may also be determined by the first group consisting of 0.10 μm, 0.20 μm, and 0.40 μm and / or the second group consisting of 0.80 μm, 1.10 μm, and 1.50 μm. The range of the eighth dimension S18 may also be determined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of the eighth dimension S18 may also be determined by a combination of any two of the values ​​included in the first group. The range of the eighth dimension S18 may also be determined by a combination of any two of the values ​​included in the second group. The eighth size S18 may be, for example, 0.10 μm to 1.50 μm, 0.10 μm to 1.10 μm, 0.10 μm to 0.80 μm, 0.10 μm to 0.40 μm, 0.10 μm to 0.20 μm, 0.20 μm to 1.50 μm, 0.20 μm to 1.10 μm, 0.2 0μm or more and 0.80μm or less, may be 0.20μm or more and 0.40μm or less, may be 0.40μm or more and 1.50μm or less, may be 0.40μm or more and 1.10μm or less, may be 0.40μm or more and 0.80μm or less, may be 0.80μm or more and 1.50μm or less, may be 0.80μm or more and 1.10μm or less, may be 1.10μm or more and 1.50μm or less.

[0220] The ratio of the eighth dimension S18 to the second dimension S12, i.e., S18 / S12, can be, for example, greater than 0.002, greater than 0.004, greater than 0.006, or greater than 0.010. S18 / S12 can be, for example, less than 0.015, less than 0.020, less than 0.030, or less than 0.050. The range of S18 / S12 can be determined by the first group consisting of 0.002, 0.004, 0.006, and 0.010 and / or the second group consisting of 0.015, 0.020, 0.030, and 0.050. The range of S18 / S12 can also be determined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of S18 / S12 can also be determined by a combination of any two of the values ​​included in the first group. The range of S18 / S12 can also be determined by a combination of any two of the values ​​included in the second group. For example, S18 / S12 may be 0.002 or more and 0.050 or less, 0.002 or more and 0.030 or less, 0.002 or more and 0.020 or less, 0.002 or more and 0.015 or less, 0.002 or more and 0.010 or less, 0.002 or more and 0.006 or less, 0.002 or more and 0.004 or less, 0.004 or more and 0.050 or less, 0.004 or more and 0.030 or less, 0.004 or more and 0.020 or less, 0.004 or more and 0.015 or less, 0.004 or more and 0.010 or less, 0.004 or more and 0.006 or less, 0.006 or more and 0.004 or more and 0.006 or more. 50 or less, can be 0.006 or more and 0.030 or less, can be 0.006 or more and 0.020 or less, can be 0.006 or more and 0.015 or less, can be 0.006 or more and 0.010 or less, can be 0.010 or more and 0.050 or less, can be 0.010 or more and 0.030 or less, can be 0.010 or more and 0.020 or less, can be 0.010 or more and 0.015 or less, can be 0.015 or more and 0.050 or less, can be 0.015 or more and 0.030 or less, can be 0.015 or more and 0.020 or less, can be 0.020 or more and 0.050 or less, can be 0.020 or more and 0.030 or less, can be 0.030 or more and 0.050 or less.

[0221] The twelfth wall surface 5712 may be at least partially located outside the seventh virtual straight line L17. The entire twelfth wall surface 5712 may be located outside the seventh virtual straight line L17.

[0222] Fig. 14C 1 is a diagram showing an example of the first wall surface 571 of the mask 50 cut along the plane Lm. The first wall surface 571 may include the 3A1-th imaginary point P13A1 and the 3A2-th imaginary point P13A2.

[0223] The 3A1 virtual point P13A1 is a virtual point where the 3A virtual straight line L13A intersects the 11th wall surface 5711 in the cross-sectional view of the mask 50. The 3A2 virtual point P13A2 is a virtual point where the 3A virtual straight line L13A intersects the 12th wall surface 5712 in the cross-sectional view of the mask 50. The 3A virtual straight line L13A is a virtual straight line that is located inside the 3rd virtual straight line L13 in the cross-sectional view of the mask 50 and extends parallel to the 3rd virtual straight line L13. The distance between the 3rd virtual straight line L13 and the 3A virtual straight line L13A in the in-plane direction of the first surface 551 is represented by the symbol ΔSA. That is, the 3A virtual straight line L13A is a virtual straight line obtained by offsetting the 3rd virtual straight line L13 inward by the distance ΔSA.

[0224] Reference numeral TA1 indicates the distance between the third imaginary point P13 and the 3A1 imaginary point P13A1 in the thickness direction Et. The position of the third imaginary straight line L13 in the in-plane direction of the first surface 551 varies according to the position of the third imaginary point P13. The position of the third imaginary point P13 in the thickness direction Et varies due to the deviation of the etching depth in the first etching process and the deviation of the etching depth in the second etching process. The larger the distance TA1, the lower the influence of the variation of the position of the third imaginary point P13 in the thickness direction Et on the position of the third imaginary straight line L13 in the in-plane direction of the first surface 551. That is, the larger the distance TA1, the slower the variation of the position of the third imaginary straight line L13 relative to the position of the third imaginary point P13 in the thickness direction Et becomes. The distance TA1 can be an indicator for suppressing the deviation of the position of the third imaginary straight line L13 in the in-plane direction of the first surface 551. Therefore, the distance TA1 can be an index for suppressing the positional variation of the organic layer 130 in the in-plane direction of the first surface 551. The larger the distance TA1 is, the more the positional variation of the organic layer 130 in the in-plane direction of the first surface 551 can be suppressed.

[0225] Reference numeral TA2 indicates the distance between the third imaginary point P13 and the 3A2 imaginary point P13A2 in the thickness direction Et. The distance TA2 can also be an indicator for suppressing the deviation of the position of the third imaginary straight line L13 in the in-plane direction of the first surface 551. Therefore, the distance TA2 can also be an indicator for suppressing the deviation of the position of the organic layer 130 in the in-plane direction of the first surface 551. The larger the distance TA2 is, the more the deviation of the position of the organic layer 130 in the in-plane direction of the first surface 551 can be suppressed.

[0226] In the present embodiment, the direction in which the first wall surface 571 extends changes gently and continuously near the third imaginary point P13. For example, in the cross-sectional view of the mask, the direction in which the tangent line tangent to the first wall surface 571 extends and the direction in which the tangent line tangent to the twelfth wall surface 5712 extends change continuously across the third imaginary point P13. Therefore, larger distances TA1 and TA2 can be obtained.

[0227] The distance ΔSA is determined according to the positional accuracy required for the organic layer 130. The distance ΔSA may be 0.10 μm, 0.20 μm, 0.30 μm, 0.50 μm, 0.70 μm, or 1.00 μm. The distance ΔSA is also called a first allowable error.

[0228] The distance TA1 is preferably sufficiently large relative to the distance ΔSA. The larger the distance TA1 is, the more the influence of the deviation of the etching depth on the position accuracy of the organic layer 130 is suppressed. The ratio of the distance TA1 to the distance ΔSA, i.e., TA1 / ΔSA, can be, for example, greater than 2.5, greater than 3.0, or greater than 3.5. TA1 / ΔSA can be, for example, less than 4.0, less than 5.0, or less than 6.0. The range of TA1 / ΔSA can be determined by the first group consisting of 2.5, 3.0 and 3.5 and / or the second group consisting of 4.0, 5.0 and 6.0. The range of TA1 / ΔSA can also be determined by a combination of any one of the values ​​included in the above-mentioned first group and any one of the values ​​included in the above-mentioned second group. The range of TA1 / ΔSA can also be determined by a combination of any two of the values ​​included in the above-mentioned first group. The range of TA1 / ΔSA can also be determined by a combination of any two of the values ​​included in the above-mentioned second group. TA1 / ΔSA can be, for example, greater than 2.5 and less than 6.0, greater than 2.5 and less than 5.0, greater than 2.5 and less than 4.0, greater than 2.5 and less than 3.5, greater than 2.5 and less than 3.0, greater than 3.0 and less than 6.0, greater than 3.0 and less than 5.0, greater than 3.0 and less than 4.0, greater than 3.0 and less than 3.5, greater than 3.5 and less than 6.0, greater than 3.5 and less than 5.0, greater than 3.5 and less than 4.0, greater than 4.0 and less than 6.0, greater than 4.0 and less than 5.0, or greater than 5.0 and less than 6.0.

[0229] As with the case of the distance TA1, the distance TA2 is preferably sufficiently large relative to the distance ΔSA. The ratio of the distance TA2 to the distance ΔSA, i.e., TA2 / ΔSA, may be, for example, greater than 1.0, greater than 1.5, or greater than 2.0. TA2 / ΔSA may be, for example, less than 4.0, less than 5.0, or less than 6.0. The range of TA2 / ΔSA may be determined by the first group consisting of 1.0, 1.5, and 2.0 and / or the second group consisting of 4.0, 5.0, and 6.0. The range of TA2 / ΔSA may also be determined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of TA2 / ΔSA may be determined by a combination of any two of the values ​​included in the first group. The range of TA2 / ΔSA may be determined by a combination of any two of the values ​​included in the second group. TA2 / ΔSA can be, for example, greater than 1.0 and less than 6.0, greater than 1.0 and less than 5.0, greater than 1.0 and less than 4.0, greater than 1.0 and less than 2.0, greater than 1.0 and less than 1.5, greater than 1.5 and less than 6.0, greater than 1.5 and less than 5.0, greater than 1.5 and less than 4.0, greater than 1.5 and less than 2.0, greater than 2.0 and less than 6.0, greater than 2.0 and less than 5.0, greater than 2.0 and less than 4.0, greater than 4.0 and less than 6.0, greater than 4.0 and less than 5.0, or greater than 5.0 and less than 6.0.

[0230] Fig. 15B 1 is a top view showing an example of an organic layer 130 formed by a vapor deposition process. The position of elements such as a boundary 133 of the organic layer 130 changes according to the position of the third virtual straight line L13 in the in-plane direction of the first surface 551. In this embodiment, by increasing the distance TA1 and the distance TA2, the influence of the variation in etching depth on the position accuracy of the third virtual straight line L13 can be suppressed.

[0231] In one through hole 56 of the mask 50, if the position of the third imaginary point P13 in the thickness direction Et changes, the position of the organic layer 130 in a plan view also changes. For example, if the position of the third imaginary point P13 in the thickness direction Et changes, the position of the boundary 133 or the position of the outer edge 134 of the organic layer 130 in a plan view changes. For example, it can be considered that the linearity of the portion of the outline of the boundary 133 in a plan view, which should be a straight line, is reduced due to the change in the position of the third imaginary point P13 in the thickness direction Et.

[0232] In the present embodiment, by increasing the distance TA1 and the distance TA2, the influence of the change in the position of the third imaginary point P13 in the thickness direction Et on the position of the third imaginary straight line L13 in the in-plane direction of the first surface 551 is reduced. Therefore, in one through hole 56 of the mask 50, even if there is a deviation in the position of the third imaginary point P13 in the thickness direction Et, the linearity of the contour of the boundary 133 when viewed from above can be obtained. Therefore, the present embodiment can improve the position accuracy of the organic layer 130.

[0233] The size of the wall surface 57 appearing in the cross-sectional view of the mask 50 is calculated based on the cross-sectional image of the sample of the mask 50. The sample of the mask 50 is produced by cutting the mask 50 along the plane Lm. The cross-sectional image of the sample is obtained by observing the cross section of the sample using a digital microscope. The size of the wall surface 57 is calculated by averaging the measured values ​​obtained around the above-mentioned 10 through holes 56.

[0234] Next, a method of manufacturing the mask 50 will be described. Fig.17 1 is a diagram showing a manufacturing apparatus 70 for manufacturing the mask 50. The manufacturing apparatus 70 includes a resist forming apparatus 71, an exposure apparatus 72, a developing apparatus 73, a first etching apparatus 76, a filling apparatus 77, a second etching apparatus 78, and a separating apparatus 79.

[0235] First, prepare a metal plate wound into a roll. Then, unwind the metal plate from the roll. The metal plate unwinding from the roll is indicated by reference numeral 55A. The metal plate 55A is sequentially conveyed to the resist forming device 71, the exposure device 72, the developing device 73, the first etching device 76, the filling device 77, the second etching device 78 and the separation device 79. In all devices from the resist forming device 71 to the separation device 79, the metal plate 55A may also be conveyed continuously along its length direction. Although not shown in the figure, the manufacturing method of the mask 50 may also include: a process of winding the metal plate 55A into a roll when conveying the metal plate 55A from one device to the next device; and a process of unwinding the metal plate 55A from the roll.

[0236] like Fig.18 As shown, the resist forming device 71 implements the following resist forming process: in the resist forming process, the first resist layer 60 is formed on the first surface 551 of the metal plate 55A, and the second resist layer 65 is formed on the second surface 552. The resist layers 60 and 65 may also be layers formed by applying a solution containing a resist material to the surface of the metal plate 55A and curing it. Alternatively, the resist layers 60 and 65 may also be layers formed by attaching a film such as a dry film to the surface of the metal plate 55A.

[0237] The coating type resist layer is formed by coating a solution containing a photosensitive material on the surface of the metal plate 55A and curing it. At this time, a firing process can be performed to fire the resist layers 60 and 65. The photosensitive material can be a photo-soluble type, that is, a so-called positive type, or a photo-curable type, that is, a so-called negative type.

[0238] The positive photosensitive material is, for example, a novolac positive resist such as SC500. The negative photosensitive material is, for example, a casein resist. The negative resist layer may also contain an acrylic resin.

[0239] The exposure device 72 performs an exposure process of exposing the first resist layer 60 and exposing the second resist layer 65. Fig.19 As shown, the first exposure light LE1 is irradiated onto the first resist layer 60 via the first exposure mask 64. The second exposure light LE2 is irradiated onto the second resist layer 65 via the second exposure mask 69. The exposure step may include a step of adjusting the relative position of the second exposure mask 69 with respect to the first exposure mask 64.

[0240] The developing device 73 performs a developing process of developing the first resist layer 60 and developing the second resist layer 65. Fig. 20 As shown, a first opening 62 is formed in the first resist layer 60, and a second opening 67 is formed in the second resist layer 65. The first resist layer 60 formed with the first opening 62 is also referred to as a first resist pattern 61. The second resist layer 65 formed with the second opening 67 is also referred to as a second resist pattern 66.

[0241] The process of forming the first resist pattern 61 on the first surface 551 and the second resist pattern 66 on the second surface 552 is also referred to as a resist pattern forming process. The resist pattern forming process includes the above-mentioned resist forming process, exposure process, and development process. The exposure process and development process are also referred to as a patterning process.

[0242] Fig.21 1 is a top view showing an example of the first resist pattern 61. The contours of the plurality of first openings 62 may also include two 31st sides 621 that are opposite to each other in the second direction E2. The contours of the plurality of first openings 62 may also include two 32nd sides 622 that are opposite to each other in the first direction E1. The contour of the first opening 62 may also be composed of two 31st sides 621 and two 32nd sides 622.

[0243] The two 31st sides 621 may each include a straight portion extending linearly. The straight portion of the 31st side 621 may extend in the first direction E1.

[0244] The two 32nd sides 622 may each include a straight portion extending linearly. The straight portion of the 32nd side 622 may extend in the second direction E2.

[0245] The 31st side 621 and the 32nd side 622 may be connected. The portion of the outline of the first opening 62 that connects the 31st side 621 and the 32nd side 622 may be bent or curved.

[0246] Fig. 22 is a top view showing an example of the second resist pattern 66. Fig. 22 In FIG. 6 , the outline of the first opening 62 of the first resist pattern 61 is indicated by a dotted line. The outlines of the plurality of second openings 67 may respectively surround the outline of the first opening 62 in a plan view.

[0247] The contours of the plurality of second openings 67 may include two 41st sides 671 facing each other in the second direction E2. The contours of the plurality of second openings 67 may include two 42nd sides 672 facing each other in the first direction E1. The contour of the second opening 67 may be composed of two 41st sides 671 and two 42nd sides 672.

[0248] The two 41st sides 671 may each include a straight portion extending linearly. The straight portion of the 41st side 671 may extend in the first direction E1.

[0249] The two 42nd sides 672 may each include a straight portion extending linearly. The straight portion of the 42nd side 672 may extend in the second direction E2.

[0250] The 41st side 671 and the 42nd side 672 may be connected. The portion of the contour of the second opening 67 connecting the 41st side 671 and the 42nd side 672 may be bent or curved.

[0251] The first etching device 76 performs a first etching process of etching the first surface 551 using a first etching liquid. By allowing the first etching liquid to enter the first opening 62, as shown in FIG. Fig.23 As shown, a first recess 56a is formed on the first surface 551. The first recess 56a does not penetrate the metal plate 55. The first etching solution may include an acidic solution capable of dissolving the iron alloy. For example, the first etching solution may include a ferric chloride solution.

[0252] Fig.23 and the following Figure 24 to Figure 28 The cross section of the metal plate 55A cut along the plane Lm is shown.

[0253] In the first etching step, the first etching liquid may be sprayed toward the first surface 551. The first etching step may be performed in a state where the first surface 551 is located below the second surface 552. In this case, the first etching liquid in contact with the metal plate 55 may fall from the metal plate 55 due to gravity. Thus, it is possible to prevent the first etching liquid in which the material of the metal plate 55 is dissolved from continuously contacting the first surface 551.

[0254] like Fig.24 As shown, the filling device 77 performs a filling process of filling the first concave portion 56a with the resin 63. By filling the first concave portion 56a with the resin 63, it is possible to suppress the second etching solution from entering the first concave portion 56a during the second etching process. Fig.24 As shown, in the filling process, a resin layer 63L covering the first resist pattern 61 may be formed. The resin 63 constituting the resin layer 63L is filled in the first recess 56a. Although not shown, the filling process may be performed in a state where the first surface 551 is located above the second surface 552.

[0255] like Fig.24 As shown, a depression 631 may be formed on the surface of the resin layer 63L. The depression 631 is formed by causing the resin 63 constituting the resin layer 63L to flow toward the first concave portion 56a. The depression 631 may be formed at a position overlapping with the first concave portion 56a in the thickness direction.

[0256] The material of the resin 63 may be configured to be slightly soluble in the second etching solution. The second etching solution, for example, includes an acidic solution capable of dissolving an iron alloy. For example, the second etching solution includes a ferric chloride solution. The material of the resin 63 may be configured to be slightly soluble in the acidic solution.

[0257] For example, the resin 63 may include an acrylic resin containing acrylic acid. The acrylic resin may include acrylic acid and acrylic ester. The lower the content of acrylic acid in the acrylic resin, the lower the resistance of the acrylic resin to the anti-acid solution. By adjusting the content of acrylic acid in the acrylic resin of the resin 63, the resin 63 can be slightly dissolved in the second etching solution in the second etching step.

[0258] The second etching device 78 performs a second etching process of etching the second surface 552 using a second etching liquid. By allowing the second etching liquid to enter the second opening 67, as shown in FIG. Fig.25 and Fig.26 As shown in FIG. 5 , second recesses 56b are formed on the second surface 552. The plurality of second recesses 56b are connected to the corresponding first recesses 56a, respectively.

[0259] In the second etching process, the second etching liquid can be sprayed onto the second surface 552. Although not shown, the second etching process can also be performed in a state where the second surface 552 is located below the first surface 551. In this case, the second etching liquid in contact with the metal plate 55 can fall from the metal plate 55 due to gravity. Thus, the second etching liquid in which the material of the metal plate 55 is dissolved can be prevented from continuously contacting the metal plate 55.

[0260] Fig.25 FIG. 2 shows a state in which the second etching step is performed until the second recess 56 b reaches the resin 63. When the second recess 56 b reaches the resin 63, the second etching liquid contacts the surface of the resin 63. When the surface of the resin 63 is dissolved in the second etching liquid, Fig.26 As shown, a gap is generated between the metal plate 55A and the resin 63. The gap is also referred to as a groove 56g. The groove 56g may have an outline surrounding a portion of the resin 63 in a plan view.

[0261] like Fig. 27 As shown in FIG. 1 , the etching of the metal plate 55A may be performed along the surface of the resin 63 in such a manner that the groove 56g is expanded in the thickness direction Et. The second etching step may also be performed until the groove 56g reaches the first surface 551. In this case, the wall surface 57 is formed by the second etching step. Although not shown, the wall surface 57 may also partially include the surface of the first recessed portion 56a formed by the first etching step.

[0262] like Fig. 27 As shown, the third imaginary point P13 on the wall surface 57 does not need to be in contact with the resin 63. Since the groove 56g is formed in the second etching step, the third imaginary point P13 can be generated at a position away from the resin 63.

[0263] Reference numeral K13 is the distance between the wall surface 57 and the resin 63 in the in-plane direction of the first surface 551 at the position of the third imaginary point P13 in the thickness direction Et. The distance K13 is determined in the cross section of the mask 50 cut along the surface Lm in the same manner as the third imaginary point P13. The distance K13 refers to the width of the groove 56g at the position of the third imaginary point P13. The width of the groove 56g may also decrease from the third imaginary point P13 toward the first end 58.

[0264] The distance K13 may be, for example, greater than 0.5 μm, greater than 1.0 μm, or greater than 1.5 μm. The distance K13 may be, for example, less than 2.0 μm, less than 3.0 μm, or less than 4.0 μm. The range of the distance K13 may be determined by the first group consisting of 0.5 μm, 1.0 μm, and 1.5 μm and / or the second group consisting of 2.0 μm, 3.0 μm, and 4.0 μm. The range of the distance K13 may also be determined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of the distance K13 may also be determined by a combination of any two of the values ​​included in the first group. The range of the distance K13 may also be determined by a combination of any two of the values ​​included in the second group. The distance K13 can be, for example, greater than 0.5μm and less than 4.0μm, greater than 0.5μm and less than 3.0μm, greater than 0.5μm and less than 2.0μm, greater than 0.5μm and less than 1.5μm, greater than 0.5μm and less than 1.0μm, greater than 1.0μm and less than 4.0μm, greater than 1.0μm and less than 3.0μm, greater than 1.0μm and less than 2.0μm, greater than 1.0μm and less than 1.5μm, greater than 1.5μm and less than 4.0μm, greater than 1.5μm and less than 3.0μm, greater than 1.5μm and less than 2.0μm, greater than 2.0μm and less than 4.0μm, greater than 2.0μm and less than 3.0μm, or greater than 3.0μm and less than 4.0μm.

[0265] The distance K13 can also be determined relative to the height H63 of the resin 63. The height H63 is the maximum value of the distance between the surface of the resin 63 and the first surface 551 in the thickness direction Et. The ratio of the distance K13 to the height H63, i.e., K13 / H63, can be, for example, greater than 0.05, greater than 0.10, or greater than 0.15. K13 / H63 can be, for example, less than 0.20, less than 0.30, or less than 0.40. The range of K13 / H63 can be determined by the first group consisting of 0.05, 0.10, and 0.15 and / or the second group consisting of 0.20, 0.30, and 0.40. The range of K13 / H63 can also be determined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of K13 / H63 can also be determined by a combination of any two of the values ​​included in the first group. The range of K13 / H63 can also be determined by a combination of any two of the values ​​included in the above-mentioned Group 2. K13 / H63 may be, for example, 0.05 or more and 0.40 or less, 0.05 or more and 0.30 or less, 0.05 or more and 0.20 or less, 0.05 or more and 0.15 or less, 0.05 or more and 0.10 or less, 0.10 or more and 0.40 or less, 0.10 or more and 0.30 or less, 0.10 or more and 0.20 or less, 0.10 or more and 0.15 or more and 0.40 or less, 0.15 or more and 0.30 or less, 0.15 or more and 0.20 or less, 0.20 or more and 0.40 or less, 0.20 or more and 0.30 or less, or 0.30 or more and 0.40 or less.

[0266] The removal process may be performed after the second etching process. The removal process may include a resin removal process for removing the resin 63. The resin 63 is removed, for example, by using an alkaline stripping solution. The removal process may include a resist removal process for removing the first resist layer 60 and the second resist layer 65. The first resist layer 60 and the second resist layer 65 may be removed simultaneously with the resin 63 by using an alkaline stripping solution. After removing the resin 63, the first resist layer 60 and the second resist layer 65 may be removed using a stripping solution different from the stripping solution used to strip the resin 63. Fig.28 It is a cross-sectional view showing the metal plate 55A in a state where the resin 63 , the first resist layer 60 , and the second resist layer 65 are removed.

[0267] The separating device 79 performs a separating step of separating the mask 50 from the metal plate 55A. The mask 50 is obtained by cutting out the region of the metal plate 55A where the through hole group 53 is formed.

[0268] In the present embodiment, since the resin 63 is dissolved in the second etching solution in the second etching step, the groove 56g is formed between the metal plate 55A and the resin 63. Therefore, compared with the case where the metal plate 55A and the resin 63 are kept in close contact, the wall surface 57 of the mask 50 in the present embodiment can have a reduced third dimension S13. Therefore, shadows in the vapor deposition step can be suppressed.

[0269] Fig.29 1 is a diagram showing the second etching process in the cross section of the metal plate 55A cut along a plane perpendicular to the straight line portion of the 21st side 591 of the second end 59. In the second etching process, the fresh second etching liquid is continuously supplied to the second surface 552. The second surface 552 is etched to form the second end 59. Fig.29 The state shown is the state immediately after the second recess 56b is connected to the first recess 56a. The second etching step is to Fig.29 The state shown is further implemented.

[0270] The second etching liquid flows more easily near the straight portion of the 21st side 591 of the second end 59 than near the connection portion where the 21st side 591 and the 22nd side 592 are connected. Therefore, the ratio of the fresh second etching liquid near the straight portion of the second end 59 is higher than the ratio of the fresh second etching liquid near the connection portion of the second end 59. The higher the ratio of the fresh second etching liquid, the faster the etching speed. Therefore, in the state just after the second recess 56b is connected to the first recess 56a, the inclination angle θ6 of the second recess 56b at the straight portion of the second end 59 is greater than the inclination angle θ6 of the second recess 56b at the connection portion of the second end 59. The inclination angle θ6 is the angle between the imaginary straight line L16 tangent to the surface of the second recess 56b at the second end 59 and the second surface 552.

[0271] Fig.30 1 is a diagram showing an example of a cross section of the mask 50 cut along a plane perpendicular to the straight line portion of the second end 59. Fig.30 The dotted line is the reference Fig.14A The wall surface 57 in the cross section of the mask 50 cut along the plane Lm is shown. Fig.30 As shown, the wall surface 57 of the straight portion located at the second end 59 is located outside the wall surface 57 of the connecting portion located at the second end 59. Therefore, at the wall surface 57 of the straight portion located at the second end 59, the shadow in the vapor deposition process is suppressed in the same manner as the wall surface 57 of the connecting portion located at the second end 59.

[0272] In the vapor deposition process, the vapor deposition material is less likely to reach the substrate 110 near the connection portion of the second end 59 than near the linear portion of the second end 59. In the present embodiment, as described above, since the shadow near the connection portion of the second end 59 is suppressed, the shadow near other portions of the second end 59 is also suppressed. Therefore, the width W1 of the end portion 132 is reduced over the entire outer edge of the organic layer 130.

[0273] If the width W1 is reduced, the area of ​​the organic layer 130 that can emit light increases. That is, the light emitting area of ​​the organic layer 130 increases. Therefore, the same light emission intensity as that of a conventional display device can be achieved with lower power than that of a conventional display device.

[0274] Fig.31 2 is a cross-sectional view showing the second etching step in the first comparative embodiment. In the first comparative embodiment, the resin 63 has high resistance to the second etching solution. Therefore, in the second etching step, the metal plate 55A and the resin 63 are kept in close contact.

[0275] Fig.32A 1 is a diagram showing a cross section of the mask cut along the above-mentioned plane Lm in the first comparative embodiment. Since the metal plate 55A and the resin 63 are kept in close contact during the second etching step, a portion of the first wall surface 571 has a shape corresponding to the surface of the resin 63. As a result, as shown in FIG. Fig.32A As shown in FIG. 1 , the third imaginary point P13 greatly protrudes inward relative to the first imaginary straight line L11 , and the third dimension S13 increases. The third imaginary point P13 is located on the inner side of the first end 58 .

[0276] On the other hand, in the present embodiment described above, in the second etching step, the resin 63 is dissolved in the second etching solution, so that the groove 56g is formed between the metal plate 55A and the resin 63. Therefore, the wall surface 57 of the mask 50 of the present embodiment can have a third dimension S13 that is reduced compared to the case of the first comparative embodiment. Therefore, shadows in the vapor deposition step can be suppressed.

[0277] Fig.32B 1 is a cross-sectional view showing the first wall surface 571 in the first comparative embodiment. In the first comparative embodiment, the first wall surface 571 is also divided into the 11th wall surface 5711 and the 12th wall surface 5712 with the third imaginary point P13 as the boundary. The 3A1 imaginary point P13A1 and the 3A2 imaginary point P13A2 are determined on the 11th wall surface 5711 and the 12th wall surface 5712 based on the 3A imaginary straight line L13A.

[0278] In the first comparison method, the third imaginary point P13 protrudes greatly inward relative to the first imaginary straight line L11. Fig.32BAs shown in FIG. 1 , the distance TA1 and the distance TA2 are relatively small. The smaller the distance TA1 and the distance TA2 are, the greater the influence of the change in the position of the third imaginary point P13 in the thickness direction Et on the position of the third imaginary straight line L13 in the in-plane direction of the first surface 551. Therefore, in the first comparison method, it can be considered that the linearity of the contour of the boundary of the organic layer or the linearity of the contour of the outer edge of the organic layer when viewed from above is low.

[0279] On the other hand, in the present embodiment described above, the distance TA1 and the distance TA2 are relatively large. Therefore, the influence of the change in the position of the third imaginary point P13 in the thickness direction Et on the position of the third imaginary straight line L13 in the in-plane direction of the first surface 551 is reduced. Therefore, in one through hole 56 of the mask 50, even if there is a deviation in the position of the third imaginary point P13 in the thickness direction Et, the linearity of the contour of the boundary 133 when viewed from above can be ensured.

[0280] Fig.33 2 is a cross-sectional view showing the second etching process in the second comparative embodiment. In the second comparative embodiment, the resin 63 has high resistance to the second etching solution as in the first comparative embodiment. Therefore, in the second etching process, the metal plate 55A and the resin 63 are kept in close contact. In addition, in the second comparative embodiment, the second etching process takes longer than in the first comparative embodiment. Therefore, the size of the second recess 56b formed by the second etching process is larger than that in the first comparative embodiment.

[0281] Fig.34A 1 is a diagram showing a cross section of the mask cut along the above-mentioned plane Lm in the second comparative embodiment. Since the size of the second recess 56b is large, the position of the third imaginary point P13 is close to the first end 58. As a result, the third dimension S13 and the third height H13 are reduced compared with the case of the first comparative embodiment. On the other hand, since the size of the second recess 56b is large, the position of the second end 59 is offset to the outside. As a result, the second dimension S12 and the fourth dimension S14 are increased compared with the case of the first comparative embodiment, and the strength of the mask 50 is reduced.

[0282] On the other hand, in the present embodiment described above, in the second etching step, the etching amount of the metal plate 55A around the resin 63 increases, but the etching amount of the metal plate 55A at the position of the second end 59 is maintained. Therefore, the third dimension S13 can be reduced while maintaining the strength of the mask 50. In addition, according to the present embodiment, the ratio of the third dimension S13 to the third height H13, that is, S13 / H13, can be reduced compared to the case of the second comparative embodiment.

[0283] Fig.34B2 is a cross-sectional view showing the first wall surface 571 in the second comparative embodiment. In the second comparative embodiment, the first wall surface 571 is also divided into the 11th wall surface 5711 and the 12th wall surface 5712 with the third imaginary point P13 as the boundary. The 3A1 imaginary point P13A1 and the 3A2 imaginary point P13A2 are determined on the 11th wall surface 5711 and the 12th wall surface 5712 based on the 3A imaginary straight line L13A.

[0284] In the second comparison method, as in the case of the first comparison method, the third imaginary point P13 protrudes greatly inward relative to the first imaginary straight line L11. Fig.34B As shown, the distance TA1 and the distance TA2 are relatively small. Therefore, in the second comparative embodiment, it is also considered that the linearity of the contour of the boundary of the organic layer or the linearity of the contour of the outer edge of the organic layer in a plan view is low.

[0285] On the other hand, in the present embodiment described above, the distance TA1 and the distance TA2 are relatively large. Therefore, the influence of the change in the position of the third imaginary point P13 in the thickness direction Et on the position of the third imaginary straight line L13 in the in-plane direction of the first surface 551 is reduced. Therefore, in one through hole 56 of the mask 50, even if there is a deviation in the position of the third imaginary point P13 in the thickness direction Et, the linearity of the contour of the boundary 133 or the linearity of the contour of the outer edge of the organic layer 130 when viewed from above can be ensured.

[0286] Fig.47A This is a diagram showing a cross section of the mask cut along the above-mentioned plane Lm in the third comparative embodiment. Fig.47B 1 is a cross-sectional view showing the first wall surface 571 in the third comparative embodiment. In the third comparative embodiment, the first wall surface 571 is also divided into the 11th wall surface 5711 and the 12th wall surface 5712 with the third imaginary point P13 as the boundary. The 3A1 imaginary point P13A1 and the 3A2 imaginary point P13A2 are determined on the 11th wall surface 5711 and the 12th wall surface 5712 based on the 3A imaginary straight line L13A.

[0287] In the third comparison method, the 11th wall surface 5711 includes a portion that is displaced inward from the third imaginary point P13 toward the first end 58. The third imaginary point P13 is located at a position further outward than the first end 58. Therefore, in the third comparison method, the protrusion amount of the portion of the third imaginary point P13 relative to the first imaginary straight line L11 is smaller than that in the first and second comparison methods.

[0288] like Fig.47BAs shown, in the third comparative embodiment, the eighth imaginary point P18 is also defined on the eleventh wall surface 5711. Unlike the case of the present embodiment, in the third comparative embodiment, the eighth imaginary straight line L18 and the eighth imaginary point P18 are located outside the seventh imaginary straight line L17. Therefore, in the third comparative embodiment, the thickness of the mask around the first end 58 is smaller than that in the present embodiment.

[0289] In the present embodiment, the eighth imaginary straight line L18 and the eighth imaginary point P18 are located inside the seventh imaginary straight line L17. Since the thickness of the mask 50 around the first end 58 is increased, the strength of the mask 50 is improved.

[0290] Fig.47C : is a cross-sectional view showing the first wall surface 571 in the third comparison method. In the third comparison method, as in the first and second comparison methods, the direction in which the first wall surface 571 extends changes discontinuously with the third imaginary point P13 as the boundary. For example, in the cross-sectional view of the mask, the direction in which the tangent line tangent to the 11th wall surface 5711 extends and the direction in which the tangent line tangent to the 12th wall surface 5712 extends change discontinuously with the third imaginary point P13 as the boundary. Therefore, as shown in FIG. Fig.47C As shown, the distance TA1 and the distance TA2 are relatively small. Therefore, in the third comparative embodiment, it is also considered that the linearity of the contour of the boundary of the organic layer or the linearity of the contour of the outer edge of the organic layer when viewed from above is low.

[0291] On the other hand, in the present embodiment described above, the direction in which the first wall surface 571 expands changes gently and continuously near the third imaginary point P13, so that larger distances TA1 and TA2 can be obtained. Therefore, the linearity of the contour of the boundary 133 or the linearity of the contour of the outer edge of the organic layer 130 when viewed from above can be ensured.

[0292] Fig.48A It is a diagram showing a cross section of the mask cut along the above-mentioned plane Lm in the fourth comparative embodiment. Fig.48B 1 is a cross-sectional view showing the first wall surface 571 in the fourth comparative embodiment. In the fourth comparative embodiment, the first wall surface 571 is also divided into the 11th wall surface 5711 and the 12th wall surface 5712 with the third imaginary point P13 as the boundary. The 3A1 imaginary point P13A1 and the 3A2 imaginary point P13A2 are determined on the 11th wall surface 5711 and the 12th wall surface 5712 based on the 3A imaginary straight line L13A.

[0293] In the fourth comparative embodiment, the 11th wall surface 5711 extends linearly from the third imaginary point P13 toward the first end 58. The third imaginary point P13 is located outside the first end 58. Such the 11th wall surface 5711 is formed by processing the first surface of the metal plate by laser processing, for example.

[0294] like Fig.48B As shown, in the fourth comparison example, the seventh imaginary straight line L17 and the eighth imaginary straight line L18 coincide with the eleventh wall surface 5711 .

[0295] In this embodiment, the eighth imaginary line L18 and the eighth imaginary point P18 are located inside the seventh imaginary line L17. In this embodiment, the thickness of the mask 50 around the first end 58 is greater than that in the fourth comparative example, so the strength of the mask 50 is improved.

[0296] Fig.48C : is a cross-sectional view showing the first wall surface 571 in the fourth comparison method. In the fourth comparison method, as in the first and second comparison methods, the direction in which the first wall surface 571 extends changes discontinuously with the third imaginary point P13 as the boundary. For example, in the cross-sectional view of the mask, the direction in which the tangent line tangent to the 11th wall surface 5711 extends and the direction in which the tangent line tangent to the 12th wall surface 5712 extends change discontinuously with the third imaginary point P13 as the boundary. Therefore, as shown in FIG. Fig.48C As shown, the distance TA1 and the distance TA2 are relatively small. Therefore, in the fourth comparative example, it is also considered that the linearity of the contour of the boundary of the organic layer or the linearity of the contour of the outer edge of the organic layer in a plan view is low.

[0297] On the other hand, in the present embodiment described above, the direction in which the first wall surface 571 expands changes smoothly and continuously near the third imaginary point P13, so that larger distances TA1 and TA2 can be obtained. Therefore, the linearity of the contour of the boundary 133 or the linearity of the contour of the outer edge of the organic layer 130 when viewed from above can be ensured.

[0298] Fig.49 FIG. 5 is a diagram showing the first wall surface 571 of the mask 50 in the embodiment of the present disclosure overlapped with the first wall surface 571 of the mask in the fourth comparative embodiment. The mask in the fourth comparative embodiment is depicted by a dotted line. Fig.49 In FIG. 2 , the two masks are drawn in such a manner that the third imaginary point P13 and the first end 58 of the two masks coincide with each other.

[0299] In the two masks, since the third imaginary point P13 and the first end 58 coincide with each other, the performance of the two masks related to shadows is equivalent. Fig.49It is understood that the mask 50 of the embodiment of the present disclosure has a greater thickness around the first end 58 and around the third imaginary point P13 than the mask of the fourth comparative embodiment. The mask 50 of the embodiment of the present disclosure can improve the strength of the mask 50 while suppressing shadows.

[0300] Fig.50 FIG. 5 is a diagram showing the first wall surface 571 of the mask 50 in the embodiment of the present disclosure overlapped with the first wall surface 571 of the mask in the fourth comparative embodiment. The mask in the fourth comparative embodiment is depicted by a dotted line. Fig.50 In the figure, two masks are drawn so that the thicknesses of the two masks around the first end 58 are equal.

[0301] from Fig.50 It is understood that in the mask 50 of the embodiment of the present disclosure, the third imaginary point P13 and the first end 58 are located outside compared to the mask of the fourth comparative embodiment. The mask 50 of the embodiment of the present disclosure can suppress shadows while maintaining the strength of the mask 50 .

[0302] Figure 51 to Figure 54 2 is a cross-sectional view showing a method for manufacturing a mask in a fifth comparative embodiment. The method for manufacturing a mask in the fifth comparative embodiment differs from the method for manufacturing a mask in the present embodiment in that a filling step of filling the first recess 56 a with a resin is not performed.

[0303] like Fig.51 As shown in FIG. 1 , the second etching step of etching the second surface 552 using the second etching solution is performed in a state where the resin is not filled in the first recess 56a. Fig.52 As shown in FIG. 5 , the second recess 56b formed on the second surface 552 is connected to the first recess 56a which is not filled with resin. As a result, the entire area of ​​the wall surface of the first recess 56a is exposed to the second etching solution. Fig.53 As shown by arrows in FIG. 1 , the positions of the wall surface of the first recess 56a and the wall surface of the second recess 56b are shifted outward as a whole. For example, not only the connection position of the first recess 56a and the second recess 56b but also the position of the first end 58 of the first recess 56a is shifted outward. Fig.54 An example of the shape of the through hole 56 formed by the second etching step is shown in FIG.

[0304] Fig.55: is a diagram showing a cross section of a mask in the fifth comparative embodiment. In the fifth comparative embodiment, after the second recess 56b is connected to the first recess 56a, the connection position of the first recess 56a and the second recess 56b moves outward, but the position of the first end 58 of the first recess 56a also moves outward. As a result, not only the third dimension S13 is reduced, but also the second dimension S12 is reduced. Therefore, it can be considered that the ratio of the third dimension S13 to the second dimension S12, that is, S13 / S12, is not sufficiently reduced.

[0305] On the other hand, in the present embodiment described above, a filling step of filling the first concave portion 56a with resin is performed. Therefore, the position of the first end 58 of the first concave portion 56a is prevented from being shifted outward in the second etching step. As a result, S13 / S12 is sufficiently reduced. Since the position shift of the first end 58 is suppressed, the dimensional accuracy of the contour of the first end 58 in the first direction E1 and the second direction E2 is improved.

[0306] Next, an example of a method for manufacturing the organic device 100 will be described.

[0307] First, a substrate 110 having a first electrode 120 formed thereon is prepared. The first electrode 120 is formed, for example, by forming a conductive layer constituting the first electrode 120 on the substrate 110 by sputtering or the like, and then patterning the conductive layer by photolithography or the like. An insulating layer 160 located between two adjacent first electrodes 120 may also be formed on the substrate 110.

[0308] Subsequently, an organic layer 130 including a first organic layer 130A, a second organic layer 130B, and the like is formed on the first electrode 120. The first organic layer 130A is formed by a vapor deposition method using a first mask 50 having a through hole 56 corresponding to the first organic layer 130A. The second organic layer 130B is also formed by a vapor deposition method using a second mask 50 having a through hole 56 corresponding to the second organic layer 130B. The third organic layer 130C is also formed by a vapor deposition method using a third mask 50 having a through hole 56 corresponding to the third organic layer 130C.

[0309] Next, a step of forming the second electrode 140 on the organic layer 130 is performed. In this way, the organic device 100 can be obtained.

[0310] According to the present embodiment, by forming the organic layer 130 using the mask 50 in which shadows are suppressed, it is possible to increase the light emitting area of ​​the organic layer 130. Therefore, it is possible to reduce power consumption of the organic device 100.

[0311] Various changes can be made to the above-mentioned one embodiment. Below, other embodiments are described with reference to the drawings as needed. In the following description and the drawings used in the following description, for parts that can be constructed in the same way as the above-mentioned one embodiment, the same numbers as those used for the corresponding parts in the above-mentioned one embodiment are used. And repeated descriptions are omitted. In addition, when the effects obtained in the above-mentioned one embodiment are obviously also obtained in other embodiments, their descriptions are sometimes omitted.

[0312] Fig.35 It is a perspective view showing an example of the through hole group 53 . Fig.36 1 is a cross-sectional view showing an example of the through-hole group 53 . Fig.36 It is along Fig.35 A cross-sectional view taken along line XXXVI-XXXVI.

[0313] like Fig.35 and Fig.36 As shown, the second ends 59 of two adjacent through holes 56 may merge. The portion where the second ends 59 of the two through holes 56 merge is also referred to as a merged portion 593.

[0314] Fig.37 2 is a cross-sectional view showing a state where a junction 593 is formed in the second etching step. The junction 593 is formed by etching the side of the metal plate 55A in a region overlapping the second resist layer 65 . The junction 593 is not in contact with the second resist layer 65 .

[0315] The distance between the first end 58 and the confluence 593 in the thickness direction Et is also referred to as the confluence height T1. The confluence height T1 is smaller than the thickness T0 of the metal plate 55A. The ratio of the confluence height T1 to the thickness T0, i.e., T1 / T0, can be, for example, greater than 0.30, greater than 0.50, or greater than 0.70. T1 / T0 can be, for example, less than 0.80, less than 0.90, or less than 0.95. The range of T1 / T0 can be determined by the first group consisting of 0.30, 0.50, and 0.70 and / or the second group consisting of 0.80, 0.90, and 0.95. The range of T1 / T0 can also be determined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of T1 / T0 can also be determined by a combination of any two of the values ​​included in the first group. The range of T1 / T0 can also be determined by a combination of any two of the values ​​included in the second group. T1 / T0 may be, for example, greater than 0.30 and less than 0.95, greater than 0.30 and less than 0.90, greater than 0.30 and less than 0.80, greater than 0.30 and less than 0.70, greater than 0.30 and less than 0.50, greater than 0.50 and less than 0.95, greater than 0.50 and less than 0.90, greater than 0.50 and less than 0.80, greater than 0.50 and less than 0.70, greater than 0.70 and less than 0.95, greater than 0.70 and less than 0.90, greater than 0.70 and less than 0.80, greater than 0.80 and less than 0.95, greater than 0.80 and less than 0.90, or greater than 0.90 and less than 0.95.

[0316] In the second comparative embodiment described above, the second etching process takes a long time. In this case, the junction height T1 becomes smaller. The smaller the junction height T1 is, the lower the strength of the mask 50 is. On the other hand, in the present embodiment, in the second etching process, the etching amount of the metal plate 55A around the resin 63 is increased, but the etching amount of the metal plate 55A at the position of the second end 59 is maintained. Therefore, according to the present embodiment, the junction height T1 and T1 / T0 can be increased compared with the case of the second comparative embodiment.

[0317] Fig.38 FIG. 5 is a top view for explaining the confluence portion 593 in detail. Fig.38 , a first through hole 56A and a second through hole 56B adjacent to the first through hole 56A in the second direction E2 are shown. A 21st side 591 of the first through hole 56A merges with a 21st side 591 of the second through hole 56B. The merged portion of the two 21st sides 591 is also referred to as a first merged portion 593.

[0318] The first junction 593 is a portion of the two 21st sides 591 located between the straight line SL5 extending in the first direction E1 and the straight line SL6 extending parallel to the straight line SL5. The straight line SL5 is located inside the 21st side 591 of the first through hole 56A and is in contact with the 21st side 591 of the first through hole 56A. The straight line SL6 is located outside the 21st side 591 of the first through hole 56A. The interval between the straight line SL5 and the straight line SL6 in the second direction E2 is ΔR2. That is, the straight line SL6 is located outside the 21st side 591 of the first through hole 56A and is separated from the straight line SL5 by ΔR2 in the second direction E2. The interval ΔR2 is 2.0 μm. The range in which the one 21st side 591 of the first through hole 56A and the one 21st side 591 of the second through hole 56B are located between the straight line SL5 and the straight line SL6 is determined as the length R21c of the first merging portion 593 .

[0319] The ratio of the length R21c of the first confluence 593 to the dimension R21 of the 21st side 591, i.e., R21c / R21, can be, for example, greater than 0.30, greater than 0.40, or greater than 0.50. R21c / R21 can, for example, be less than 0.75, less than 0.85, or less than 0.95. The range of R21c / R21 can also be determined by the first group consisting of 0.30, 0.40, and 0.50 and / or the second group consisting of 0.75, 0.85, and 0.95. The range of R21c / R21 can also be determined by a combination of any one of the values ​​included in the first group and any one of the values ​​included in the second group. The range of R21c / R21 can also be determined by a combination of any two of the values ​​included in the first group. The range of R21c / R21 can also be determined by a combination of any two of the values ​​included in the second group. R21c / R21 may be, for example, greater than 0.30 and less than 0.95, greater than 0.30 and less than 0.85, greater than 0.30 and less than 0.75, greater than 0.30 and less than 0.50, greater than 0.30 and less than 0.40, greater than 0.40 and less than 0.95, greater than 0.40 and less than 0.85, greater than 0.40 and less than 0.75, greater than 0.40 and less than 0.50, greater than 0.50 and less than 0.95, greater than 0.50 and less than 0.85, greater than 0.50 and less than 0.75, greater than 0.75 and less than 0.95, greater than 0.75 and less than 0.85, or greater than 0.85 and less than 0.95.

[0320] Fig.391 is a top view showing an example of the through hole group 53 including the first merging portion 593. The first merging portion 593 extends along the first direction E1 between two adjacent through holes 56 in the second direction E2. The rib 553 of the second surface 552 includes: a portion located between two adjacent second ends 59 in the first direction E1; and a portion located between two adjacent second ends 59 in the third direction E3.

[0321] exist Figure 35 to Figure 39 In the example shown, the second dimension S12, the third dimension S13, and the like are also determined in a cross section of the mask 50 cut along a plane Lm inclined at an angle of 45 degrees with respect to the first direction E1. Figure 35 to Figure 39 In the example shown, by controlling S13 / S12 , it is possible to suppress the shadow of the mask 50 while maintaining the strength of the mask 50 .

[0322] exist Figure 35 to Figure 39 In the example shown, the vapor deposition material passing through the vicinity of the first confluence portion 593 can adhere to the substrate 110 near the connection portion of the second end 59. The confluence height T1 of the first confluence portion 593 is smaller than the thickness T0 of the metal plate 55A. Therefore, compared with the case where the mask 50 does not include the first confluence portion 593, the vapor deposition material is more likely to reach the substrate 110 near the connection portion of the second end 59. Therefore, according to Figure 35 to Figure 39 In the example shown, it is possible to suppress the shadow in the vicinity of the connection portion of the second end 59 .

[0323] Fig.40 is a perspective view showing an example of the through hole group 53. Fig.40 As shown, two second ends 59 adjacent to each other in the second direction E2 may merge together, and two second ends 59 adjacent to each other in the first direction E1 may merge together.

[0324] Fig.41 1 is a top view for explaining in detail the junction of two second ends 59 adjacent to each other in the first direction E1. Fig.41 , a first through hole 56A and a third through hole 56C adjacent to the first through hole 56A in the first direction E1 are shown. A 22nd side 592 of the first through hole 56A merges with a 22nd side 592 of the third through hole 56C. The merged portion of the two 22nd sides 592 is also referred to as a second merged portion 594.

[0325] The second junction 594 is a portion of the two 22nd sides 592 located between the straight line SL7 extending in the second direction E2 and the straight line SL8 extending parallel to the straight line SL7. The straight line SL7 is located inside the 22nd side 592 of the first through hole 56A and is in contact with the 22nd side 592 of the first through hole 56A. The straight line SL8 is located outside the 22nd side 592 of the first through hole 56A. The interval between the straight line SL7 and the straight line SL8 in the first direction E1 is ΔR2. That is, the straight line SL8 is located outside the 22nd side 592 of the first through hole 56A and is separated from the straight line SL7 by ΔR2 in the first direction E1. The range in which one 22nd side 592 of the first through hole 56A and one 22nd side 592 of the third through hole 56C are located between the straight line SL7 and the straight line SL8 is determined as the length R22c of the second junction 594.

[0326] The numerical range of R22c / R22, which is the ratio of the length R22c of the second merging portion 594 to the dimension R22 of the 22nd side 592, may be the same as the numerical range of R21c / R21 described above.

[0327] Fig.42 1 is a top view showing an example of the through hole group 53 including the first merging portion 593 and the second merging portion 594. The first merging portion 593 extends along the first direction E1 between two adjacent through holes 56 in the second direction E2. The second merging portion 594 extends along the second direction E2 between two adjacent through holes 56 in the first direction E1. The rib 553 of the second surface 552 includes a portion located between two adjacent second ends 59 in the third direction E3.

[0328] exist Figure 40 to Figure 42 In the example shown, the second dimension S12, the third dimension S13, and the like are also determined in a cross section of the mask 50 cut along a plane Lm inclined at an angle of 45 degrees with respect to the first direction E1. Figure 40 to Figure 42 In the example shown, by controlling S13 / S12 , it is possible to suppress the shadow of the mask 50 while maintaining the strength of the mask 50 .

[0329] Fig.43 1 is a plan view showing another example of the through-hole group 53 including the first merging portion 593 and the second merging portion 594 .

[0330] In the above-described embodiment, an example is shown in which the shape of the first end 58 of the wall surface 57 is similar to the shape of the second end 59. For example, an example is shown in which the first end 58 includes the 11th side 581 extending in parallel with the 21st side 591 of the second end 59, and the 12th side 582 extending in parallel with the 22nd side 592 of the second end 59. Fig.43, an example is shown in which the shape of the first end 58 and the shape of the second end 59 of the wall surface 57 are not similar.

[0331] like Fig.43 As shown, the plurality of first ends 58 may also include two 11th sides 581 that are opposite to each other in the fourth direction E4. The plurality of first ends 58 may also include two 12th sides 582 that are opposite to each other in the third direction E3. The first end 58 may also be composed of two 11th sides 581 and two 12th sides 582. The 11th side 581 and the 12th side 582 may also be connected.

[0332] The two 11th sides 581 may each include a straight portion extending straightly. The two 12th sides 582 may each include a straight portion extending straightly. The portion of the first end 58 where the 11th side 581 and the 12th side 582 are connected may be curved.

[0333] exist Fig.43 In the example shown, the second dimension S12, the third dimension S13, and the like are also determined in a cross section of the mask 50 cut along a plane Lm inclined at an angle of 45 degrees with respect to the first direction E1. Fig.43 In the example shown, by controlling S13 / S12 , it is possible to suppress the shadow of the mask 50 while maintaining the strength of the mask 50 .

[0334] When the second end 59 includes two 21st sides 591 and two 22nd sides 592, four intersection points are generated. The intersection point Cm through which the surface Lm passes is selected so that the distance between the intersection point Cm and the first end 58 becomes the minimum.

[0335] The method of forming a layer on the substrate 110 using the mask 50 described above is not particularly limited. For example, a layer may be formed on the substrate 110 by a physical film forming method other than the vapor deposition method, such as a sputtering method. In a physical film forming method other than the vapor deposition method, a layer is formed on the substrate 110 by causing a material passing through the through hole 56 of the mask 50 to adhere to the substrate 110.

[0336] [Example]

[0337] Next, the embodiments of the present disclosure will be described in more detail with reference to examples. However, the embodiments of the present disclosure are not limited to the description of the following examples unless exceeding the gist of the present disclosure.

[0338] (Example A1)

[0339] A metal plate 55A made of an iron alloy containing 36 mass % of nickel, the remainder of iron, and inevitable impurities is prepared. The metal plate 55A has a thickness T0 of 26 μm.

[0340] based on Figure 20 to Figure 31The manufacturing method shown in the figure produces a Fig.13 The mask 50 of the through hole group 53 is shown. The material of the resin 63 is configured to be slightly dissolved in the second etching solution. The dimensions and the like of each component of the through hole group 53 are as follows.

[0341] · Dimension R11 of the 11th side 581 of the first end 58: 48.0 μm

[0342] · Dimension R12 of the 12th side 582 of the first end 58: 33.0 μm

[0343] ·First pitch P21 of the second end 59: 96.0 μm

[0344] · Second pitch P22 of second end 59: 96.0 μm

[0345] Based on the sample of the mask 50, the size of the wall surface 57 appearing in the cross-sectional view of the mask 50 is calculated. The sample of the mask 50 is produced by cutting the mask 50 along the surface Lm using a microtome. The surface Lm is a surface inclined at an angle of 45 degrees with respect to the first direction E1 and perpendicular to the first surface 551 and the second surface 552. As a microtome, UltraMicrotome EMUC7 manufactured by Leica Corporation is used.

[0346] Using a digital microscope, a cross-sectional image of the sample of the mask 50 was obtained around the 10 through holes 56. The 10 through holes 56 included the central through hole described above and were arranged along the direction of the plane Lm. As a digital microscope, a VHX-7000 manufactured by KEYENCE Co., Ltd. was used. The observation conditions were as follows.

[0347] Magnification: 2500 times

[0348] If the cross-sectional images of the through hole 56 and the wall surface 57 do not fit into one screen of the digital microscope at a magnification of 2500 times, the magnification is reduced so that the cross-sectional images of the through hole 56 and the wall surface 57 fit into one screen.

[0349] The cross-sectional image was analyzed using analysis software (VHX-7000_970F), thereby calculating the dimensions of the wall surfaces 57 around the ten through holes 56. The analysis procedure is as follows.

[0350] Select the auxiliary function “Automatic edge extraction” Select the auxiliary tool “Point” and select the point of the first end 58 , the point of the second end 59 , and the point P10 on the first surface 551 located outside the second end 59 .

[0351] Select the auxiliary tool "Line", select the point at the first end 58 and the point at the second end 59. Fig.44As shown in FIG. 1 , the above-mentioned first imaginary straight line L11 connecting the point of the first end 58 and the point of the second end 59 is drawn.

[0352] Select the auxiliary tool "Line", and select the point of the first end 58 and the point P10 on the first surface 551. Fig.44 As shown, a first straight line SL11 connecting a point at the first end 58 and a point on the first surface 551 is drawn.

[0353] Select the auxiliary tool "Vertical Line" and select the point between the first straight line SL11 and the second end 59. Fig.44 As shown in FIG. 1 , the second imaginary straight line L12 is drawn which passes through the point of the second end 59 and is perpendicular to the first straight line SL11 .

[0354] Select the auxiliary tool "Parallel Lines" and select the first straight line SL11 and the third imaginary point P13. Fig.44 As shown in FIG. 1 , a second straight line SL12 passing through the third imaginary point P13 and parallel to the first straight line SL11 is drawn.

[0355] Select the auxiliary tool "Parallel Lines" and select the first straight line SL11 and the first imaginary point P11. Fig.44 As shown in FIG. 1 , a third straight line SL13 passing through the first imaginary point P11 and parallel to the first straight line SL11 is drawn.

[0356] Select the auxiliary tool "Intersection Line" and select the first imaginary straight line L11 and the second straight line SL12. Fig.44 As shown in FIG. 1 , a first intersection point CP11 where the first virtual straight line L11 and the second straight line SL12 intersect is set.

[0357] Select the auxiliary tool "Intersection Line" and select the second imaginary straight line L12 and the second straight line SL12. Fig.44 As shown in FIG. 1 , a second intersection point CP12 where the second virtual straight line L12 intersects the second straight line SL12 is set.

[0358] Select the auxiliary tool "Intersection Line" and select the third imaginary straight line L13 and the second straight line SL12. Fig.44 As shown, a third imaginary point P13 where the third imaginary straight line L13 intersects the second straight line SL12 is set as a third intersection point CP13.

[0359] Select the auxiliary tool "Intersection Line", select the first straight line SL11 and the second imaginary straight line L12. Fig.44 As shown, the second imaginary point P12 where the first straight line SL11 intersects the second imaginary straight line L12 is set as the fourth intersection point CP14.

[0360] Select the auxiliary tool "Intersection Line" and select the second imaginary straight line L12 and the third straight line SL13. Fig.44 As shown in FIG. 1 , a fifth intersection point CP15 where the second imaginary straight line L12 and the third straight line SL13 intersect is set.

[0361] The main measurement "between 2 points" is selected, and the fourth intersection point CP14 and the point of the first end 58 are selected. In this way, the above-mentioned second dimension S12 is calculated.

[0362] Select the main measurement "Between two points", and select the first intersection point CP11 and the third intersection point CP13. In this way, the third dimension S13 described above is calculated.

[0363] The main measurement "between 2 points" is selected, and the fourth intersection point CP14 and the point of the second end 59 are selected. In this way, the above-mentioned reference height H10 is calculated.

[0364] Select the main measurement "between 2 points", and select the fourth intersection point CP14 and the second intersection point CP12. In this way, the third height H13 described above is calculated.

[0365] The calculation results of the dimensions of the wall surface 57 in Example A1 are shown in Fig.45 "Average", "Maximum" and "Minimum" respectively indicate the average, maximum and minimum values ​​of the 10 calculation results.

[0366] (Example A2)

[0367] As in Example A1, based on Figure 20 to Figure 31 The manufacturing method shown in the figure produces a Fig.39 The mask 50 of the through hole group 53 is shown. The thickness T0 of the metal plate 55A is 26 μm. The material of the resin 63 is configured to be slightly dissolved in the second etching solution. The dimensions and the like of each component of the through hole group 53 are as follows.

[0368] · Dimension R11 of the 11th side 581 of the first end 58: 62.0 μm

[0369] · Dimension R12 of the 12th side 582 of the first end 58: 51.0 μm

[0370] ·First pitch P21 of the second end 59: 96.0 μm

[0371] · Second pitch P22 of second end 59: 96.0 μm

[0372] The dimensions of the wall surface 57 appearing in the cross-sectional view of the mask 50 are calculated based on the sample of the mask 50 in the same manner as in the case of Example A1. The calculation results of the dimensions of the wall surface 57 in Example A2 are shown in FIG. Fig.45 .

[0373] (Example A3)

[0374] As in Example A1, based on Figure 20 to Figure 31 The manufacturing method shown in the figure produces a Fig.43 The mask 50 of the through hole group 53 shown. The thickness T0 of the metal plate 55A is 21 μm. The fourth direction E4 in which the two 11th sides 581 of the first end 58 of the wall surface 57 of the mask 50 are opposite to each other is inclined at 45 degrees relative to the second direction E2. The third direction E3 in which the two 12th sides 582 of the first end 58 of the wall surface 57 of the mask 50 are opposite to each other is inclined at 45 degrees relative to the first direction E1. The material of the resin 63 is configured to be slightly dissolved in the second etching solution. The dimensions of the components of the through hole group 53 are as follows.

[0375] · Dimension R11 of the 11th side 581 of the first end 58: 38.0 μm

[0376] · Dimension R12 of the 12th side 582 of the first end 58: 30.0 μm

[0377] · First pitch P21 of the second end 59: 52.0 μm

[0378] · Second pitch P22 of second end 59: 52.0 μm

[0379] The dimensions of the wall surface 57 appearing in the cross-sectional view of the mask 50 are calculated based on the sample of the mask 50 in the same manner as in the case of Example A1. The calculation results of the dimensions of the wall surface 57 in Example A3 are shown in FIG. Fig.45 .

[0380] (Example B1)

[0381] The mask 50 was manufactured in the same manner as in Example A1 except that the resin 63 having high resistance to the second etching solution was used. No groove was formed between the metal plate 55A and the resin 63 .

[0382] The dimensions of the wall surface 57 appearing in the cross-sectional view of the mask 50 are calculated based on the sample of the mask 50 in the same manner as in the case of Example A1. The calculation results of the dimensions of the wall surface 57 in Example B1 are shown in FIG. Fig.46 .

[0383] (Example B2)

[0384] The mask 50 was manufactured in the same manner as in Example A2 except that the resin 63 having high resistance to the second etching solution was used. No groove was formed between the metal plate 55A and the resin 63 .

[0385] The dimensions of the wall surface 57 appearing in the cross-sectional view of the mask 50 were calculated based on the sample of the mask 50 in the same manner as in the case of Example A1. The calculation results of the dimensions of the wall surface 57 in Example B2 are shown in FIG. Fig.46 .

[0386] (Example B3)

[0387] The mask 50 was manufactured in the same manner as in Example A3 except that the resin 63 having high resistance to the second etching solution was used. No groove was formed between the metal plate 55A and the resin 63 .

[0388] The dimensions of the wall surface 57 appearing in the cross-sectional view of the mask 50 are calculated based on the sample of the mask 50 in the same manner as in the case of Example A1. The calculation results of the dimensions of the wall surface 57 in Example B3 are shown in FIG. Fig.46 .

[0389] like Fig.46 As shown in FIG. 1 , when the resin 63 having high resistance to the second etching solution is used, S13 / S12 is 0.150 or more. On the other hand, when the resin 63 configured to be slightly soluble in the second etching solution is used, as shown in FIG. Fig.45 As shown, S13 / S12 is less than 0.120.

Claims

1. A mask comprising a plurality of through holes, characterized in that: The mask has: A metal plate including a first surface and a second surface located on the opposite side of the first surface in the thickness direction; and a wall surface facing the through hole, including a first end located on the first surface and a second end located on the opposite side of the first end in the thickness direction, The first end is located inwardly of the second end. The wall surface includes: a first wall surface located between a first imaginary point where a first imaginary straight line and the wall surface intersect and the first end; and a second wall surface located between the first imaginary point and the second end. The first imaginary straight line is an imaginary straight line passing through the first end and the second end. The first wall surface includes a portion located inside the first imaginary straight line. The wall surface has a second dimension, and the second dimension is a distance between a second imaginary point where a second imaginary straight line intersects the first surface and the first end in a plane direction of the first surface. The second imaginary straight line is an imaginary straight line passing through the second end and extending in the thickness direction. The first wall surface has a third dimension, and the third dimension is a distance between the first imaginary straight line and a third imaginary straight line in a plane direction of the first surface. The third imaginary straight line is an imaginary straight line extending in parallel with the first imaginary straight line and tangent to the first wall surface. A ratio of the third dimension to the second dimension is 0.120 or less.

2. The mask according to claim 1, characterized in that A ratio of the third dimension to the second dimension is equal to or greater than 0.

030.

3. The mask according to claim 1, characterized in that A third imaginary point, which is a point at which the third imaginary straight line is tangent to the first wall surface, is located outside the first end.

4. The mask according to claim 3, characterized in that The wall surface has a reference height, and the reference height is a distance between the first end and the second end in the thickness direction. A ratio of the second dimension to the reference height is 1.00 or less.

5. The mask according to claim 3, characterized in that The first wall surface includes: an 11th wall surface located between the third imaginary point and the first end; and a 12th wall surface located between the third imaginary point and the first imaginary point. The eleventh wall surface includes a portion located inside the seventh imaginary straight line. The seventh imaginary straight line is an imaginary straight line passing through the first end and the third imaginary point.

6. The mask according to claim 5, characterized in that The 12th wall surface includes the 3A2th imaginary point, The 3A2th imaginary point is an imaginary point where the 3Ath imaginary straight line intersects the 12th wall surface. The 3A imaginary straight line is an imaginary straight line obtained by shifting the 3rd imaginary straight line inward by the amount of the first allowable error. The first allowable error is 0.10 μm. A ratio of a distance between the third imaginary point and the 3A2 imaginary point in the thickness direction to the first allowable error is greater than or equal to 1.

0.

7. The mask according to claim 1, characterized in that The wall surface has a third height, the third height being the distance between the first end and a third imaginary point in the thickness direction, the third imaginary point being a point at which the third imaginary straight line is tangent to the first wall surface, A ratio of the third dimension to the third height is 1.00 or less.

8. The mask according to any one of claims 1 to 7, characterized in that: The plurality of through holes are arranged in a first direction and a second direction in a plan view, The second size and the third size are determined in a cross section of the mask cut along a plane inclined at an angle of 45 degrees with respect to the first direction.

9. The mask according to claim 8, characterized in that The second end includes two 21st sides that are opposite to each other in the second direction, The two 21st sides respectively include a straight line portion.

10. The mask according to claim 9, characterized in that The plurality of through holes include a first through hole and a second through hole adjacent to the first through hole in the second direction. One of the 21st sides of the first through hole merges with one of the 21st sides of the first through hole.

11. The mask according to claim 10, characterized in that The wall surface has a confluence height, which is a distance between the first end and a confluence portion in the thickness direction, wherein the confluence portion is a confluence portion where one of the 21st sides of the first through hole and one of the 21st sides of the first through hole merge, A ratio of the junction height to the thickness of the metal plate is 0.50 or more.

12. The mask according to claim 9, characterized in that The second end includes two 22nd sides that are opposite to each other in the first direction, The two 22nd sides respectively include a straight line portion.

13. The mask according to claim 12, characterized in that The plurality of through holes include a first through hole and a third through hole adjacent to the first through hole in the first direction. The 22nd side of the first through hole merges with the 22nd side of the third through hole.

14. A method for manufacturing a mask, wherein the mask comprises a plurality of through holes, characterized in that: The method for manufacturing the mask comprises: A step of preparing a metal plate, the metal plate including a first surface and a second surface located on the opposite side of the first surface in a thickness direction; a resist pattern forming step of forming a first resist pattern on a first surface of the metal plate and forming a second resist pattern on a second surface of the metal plate; a first etching step of etching the first surface to form a plurality of first recesses on the first surface; a filling step of filling the first recess with a resin; and a second etching step of etching the second surface to form a plurality of second recesses on the second surface; In the second etching step, the plurality of second recesses are respectively connected to the corresponding first recesses. In the second etching step, a groove is formed between the metal plate and the resin.

15. The method for manufacturing a mask according to claim 14, characterized in that: In the second etching step, the surface of the resin is dissolved in the etching solution.

16. The method for manufacturing a mask according to claim 14, characterized in that: The mask includes a wall surface facing the through hole, The wall surface includes: a first end located on the first surface; and a second end located on the opposite side of the first end in the thickness direction, The first end is located inwardly of the second end. The wall surface includes: a first wall surface located between a first imaginary point where a first imaginary straight line and the wall surface intersect and the first end; and a second wall surface located between the first imaginary point and the second end. The first imaginary straight line is an imaginary straight line passing through the first end and the second end. The first wall surface includes a portion located inside the first imaginary straight line. The point where the third imaginary straight line is tangent to the first wall surface, i.e., the third imaginary point, does not touch the resin. The third imaginary straight line is an imaginary straight line extending in parallel with the first imaginary straight line and being tangent to the first wall surface.

17. The method for manufacturing a mask according to claim 16, characterized in that: A distance between the third imaginary point and the resin in the in-plane direction of the first surface is 0.5 μm or more.

18. The method for manufacturing a mask according to claim 16, characterized in that: The third imaginary point is located outside the first end.

19. The method for manufacturing a mask according to any one of claims 14 to 18, characterized in that: The second surface includes a rib located between two adjacent through holes in a plan view, The rib is a portion of the second surface that is not etched in the second etching step.

20. The method for manufacturing a mask according to any one of claims 16 to 18, characterized in that: The plurality of through holes are arranged in a first direction and a second direction in a plan view, The second end includes two 21st sides that are opposite to each other in the second direction, The plurality of through holes include a first through hole and a second through hole adjacent to the first through hole in the second direction. One of the 21st sides of the first through hole merges with one of the 21st sides of the first through hole, The wall surface has a confluence height, which is a distance between the first end and a confluence portion in the thickness direction, wherein the confluence portion is a confluence portion where one of the 21st sides of the first through hole and one of the 21st sides of the first through hole merge, A ratio of the junction height to the thickness of the metal plate is 0.50 or more.

Images