Preparation method of silicon dioxide layer, antireflection anti-fingerprint film and display equipment

Abstract

The invention belongs to the technical field of antireflection film preparation, and provides a preparation method of a silicon dioxide layer, an antireflection anti-fingerprint film and display equipment, and the preparation method of the silicon dioxide layer comprises the following steps: taking a mixed gas of oxygen and water vapor as a reaction gas, and preparing the silicon dioxide layer by adopting a sputtering method. According to the embodiment of the invention, the silicon dioxide layer can improve the binding force between the silicon dioxide layer and other layers of the anti-reflection anti-fingerprint film, such as the anti-fingerprint film layer, the silicon dioxide layer and the silicon nitride layer, so that the wear resistance of the anti-reflection anti-fingerprint film can be improved, and the service life of the anti-reflection anti-fingerprint film is prolonged.

Description

Technical Field

[0001] The present application belongs to the technical field of anti-reflection film preparation, and more specifically, to a method for preparing a silicon dioxide layer, an anti-reflection anti-fingerprint film and a display device. Background Art

[0002] With the widespread application of touch screens in mobile phones, televisions, computers, tablets, and automotive electronic products, the user experience requirements for touch screens are getting higher and higher. In order to protect the touch screen and avoid dirt, it is often necessary to add a layer of protective film on the touch screen. The most common protective film at present is anti-reflection film (AR film for short). In related technologies, the wear resistance of the anti-reflection film is poor. As the anti-reflection film is used, it will wear and affect the anti-reflection performance, greatly reducing the service life of the product. Summary of the invention

[0003] In order to solve the above technical problems to a certain extent, the purpose of the embodiments of the present application is to provide a method for preparing a silicon dioxide layer, an anti-reflective anti-fingerprint film and a display device to improve the wear resistance of the anti-reflective anti-fingerprint film.

[0004] To achieve the above objectives, in a first aspect, an embodiment of the present application provides a method for preparing a silicon dioxide layer, comprising: using a mixed gas of oxygen and water vapor as a reaction gas and adopting a sputtering method to prepare the silicon dioxide layer.

[0005] Furthermore, the volume ratio of oxygen and water vapor in the mixed gas is (4-10):1; and / or, the volume ratio of sputtering gas and mixed gas in the sputtering method is (0.6-3):1, and the sputtering gas includes one or more of helium, neon, argon, krypton and xenon.

[0006] Furthermore, the sputtering method is a magnetron sputtering method; the magnetron sputtering method includes at least one of the following conditions:

[0007] a. The sputtering target is a silicon target;

[0008] b. The background vacuum is greater than 5×10 -4 Pa;

[0009] c. Sputtering gas pressure is 0.1-0.6Pa;

[0010] d. The power of medium frequency sputtering power supply is 15-20KW;

[0011] e. The volume proportion of water vapor in the mixed gas is 5%-20%.

[0012] In a second aspect, the present application provides a method for preparing an anti-reflective anti-fingerprint film, comprising:

[0013] The silicon dioxide layer under the anti-fingerprint film layer of the anti-reflection anti-fingerprint film is prepared by the above method.

[0014] Furthermore, the method for preparing the anti-reflective anti-fingerprint film also includes:

[0015] preparing a laminate;

[0016] preparing a silicon dioxide layer on the stack to obtain an anti-reflection film;

[0017] An anti-fingerprint film layer is deposited on the surface of the silicon dioxide layer of the anti-reflection film to obtain an anti-reflection anti-fingerprint film.

[0018] Further, the anti-reflection film includes a stack and a silicon dioxide layer stacked and bonded to the surface of the stack;

[0019] The stack includes a plurality of first layers stacked and combined in sequence;

[0020] The first layer includes a first bonding layer and a first silicon dioxide layer; two adjacent first layers are stacked and bonded by the first silicon dioxide layer of one first layer and the first bonding layer of the other first layer;

[0021] The first bonding layer on the surface of the stack is stacked and bonded with the silicon dioxide layer;

[0022] The first bonding layer is a SiN layer, a ZrO2 layer or a TiO2 layer.

[0023] Further, preparing the laminate includes:

[0024] A first silicon dioxide layer and a first bonding layer are alternately deposited on the substrate in sequence by sputtering to form a first layer;

[0025] Perform the following operations 0 or more times: alternately depositing a first silicon dioxide layer and a first bonding layer on the aforementioned first layer; and / or,

[0026] The method of depositing the first silicon dioxide layer comprises at least one of the following conditions:

[0027] a. The sputtering target is silicon target; b. The background vacuum is greater than 5×10 -4 Pa; c. sputtering gas pressure is 0.1-0.6Pa; d. medium frequency sputtering power supply power is 8-20KW; e. the volume of sputtering gas and reaction gas is (0.6-3):1; f. sputtering gas is argon and reaction gas is oxygen.

[0028] Further, the first bonding layer is a SiN layer, and the method for depositing the first bonding layer includes at least one of the following conditions:

[0029] a. The sputtering target is silicon target; b. The background vacuum is greater than 5×10 -4Pa; c. sputtering gas pressure is 0.1-0.6Pa; d. medium frequency sputtering power supply power is 8-20KW; e. the volume of sputtering gas and reaction gas is (0.6-3):1; f. sputtering gas is argon and reaction gas is nitrogen.

[0030] In a third aspect, the embodiment of the present application provides an anti-reflective anti-fingerprint film, comprising:

[0031] The aforementioned silicon dioxide layer;

[0032] And an anti-fingerprint film layer is arranged on the surface of the silicon dioxide layer.

[0033] In a fourth aspect, an embodiment of the present application provides a display device, wherein a screen of the display device has the aforementioned anti-reflection and anti-fingerprint film.

[0034] The first aspect of the present application provides a method for preparing a silicon dioxide layer using a mixture of oxygen and water vapor as a reaction gas and a sputtering method to prepare a silicon dioxide layer. The method uses a mixture of water vapor and oxygen as a reaction gas. Due to the action of the water vapor reaction gas, the number of hydroxyl groups (OH) on the surface of the plated film layer increases, so that the silicon dioxide layer and the subsequent anti-fingerprint film can have a better reaction interface, so that the generated silicon dioxide layer and other layers of the anti-reflective anti-fingerprint film, such as the anti-fingerprint film layer, the silicon dioxide layer, the silicon nitride layer, etc., have a stronger interface bonding force, so that the silicon dioxide layer can improve the wear resistance and service life of the anti-reflective anti-fingerprint film.

[0035] The second aspect of the present application provides a method for preparing an anti-reflective anti-fingerprint film. The silicon dioxide layer is prepared by the above method, so that the silicon dioxide layer and the anti-fingerprint film layer have good bonding force, so that the anti-reflective anti-fingerprint film as a whole has good wear resistance while achieving low reflection and high transmittance, thereby improving the wear resistance and service life of the anti-reflective anti-fingerprint film. BRIEF DESCRIPTION OF THE DRAWINGS

[0036] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative labor.

[0037] Figure 1 Schematic diagram of the structure of the anti-reflection film according to an embodiment of the present application.

[0038] Figure 2 Schematic diagram of the structure of the anti-reflective anti-fingerprint film according to an embodiment of the present application.

[0039] Among them, the reference numerals in the figure are:

[0040] 1-anti-fingerprint film layer, 2-surface silicon dioxide layer, 3-second first bonding layer, 4-third first silicon dioxide layer, 5-fourth first bonding layer, 6-fifth first silicon dioxide layer, 7-sixth first bonding layer, 8-seventh first silicon dioxide layer, 9-eighth first bonding layer, 10-ninth first silicon dioxide layer, 11-substrate layer. DETAILED DESCRIPTION

[0041] In order to make the technical problems, technical solutions and beneficial effects to be solved by the present application more clearly understood, the present application is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present application and are not used to limit the present application.

[0042] It should be noted that when an element is referred to as being "fixed to" or "disposed on" another element, it can be directly on the other element or indirectly on the other element. When an element is referred to as being "connected to" another element, it can be directly connected to the other element or indirectly connected to the other element.

[0043] It should be understood that the terms "length", "width", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", etc., indicating the orientation or position relationship, are based on the orientation or position relationship shown in the drawings, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present application.

[0044] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of this application, the meaning of "plurality" is two or more, unless otherwise clearly and specifically defined.

[0045] With the widespread application of touch screens in mobile phones, TVs, computers, tablets, and automotive electronic products, the user experience requirements for touch screens are getting higher and higher. In order to protect the touch screen and avoid dirt, it is often necessary to add a layer of protective film on the touch screen. Currently, the most common protective film is anti-reflection film (AR film for short).

[0046] In the related art, the sputtering method is generally used to prepare the anti-reflection film. For example, argon is used as the sputtering gas and oxygen is used as the reaction gas, so that each layer structure of the anti-reflection film is deposited and prepared in sequence. However, the anti-reflection film in the related art has poor wear resistance. As the anti-reflection film is used, it will wear and affect the anti-reflection performance, greatly reducing the service life of the product.

[0047] The inventors found that the layer that has a greater impact on the wear resistance of the anti-reflection film is the silicon dioxide layer on the surface of the anti-reflection film.

[0048] In addition, in order to keep the surface of the touch screen clean during use, an anti-fingerprint layer (AF film for short) is generally added to the surface of the AR film in the related art, that is, an anti-reflective anti-fingerprint film is obtained.

[0049] The inventors found that the bonding force between the anti-fingerprint layer and the silicon dioxide layer on the surface of the anti-reflection film is also an important factor affecting the wear resistance and service life of the anti-reflection anti-fingerprint film.

[0050] In order to solve the above technical problems to a certain extent, an embodiment of the present application provides a method for preparing a silicon dioxide layer, comprising: using a mixed gas of oxygen and water vapor as a reaction gas and adopting a sputtering method to prepare the silicon dioxide layer.

[0051] The silicon dioxide layer prepared by the above preparation method can improve the overall wear resistance of the anti-reflection film or the anti-reflection anti-fingerprint film without affecting the optical effect, and has good wear resistance while achieving low reflection and high transmittance.

[0052] Using the above silicon dioxide layer to prepare an anti-reflection film can improve the wear resistance of the anti-reflection film to a certain extent.

[0053] In addition, the inventors found that the silicon dioxide layer is used to prepare an anti-reflection anti-fingerprint film. The silicon dioxide layer has good bonding with the anti-fingerprint film layer, so that the anti-reflection anti-fingerprint film as a whole has good wear resistance while achieving low reflection and high transmittance.

[0054] In some embodiments, the volume ratio of oxygen and water vapor in the mixed gas is (4-10):1; in the exemplary examples, the volume ratio of oxygen and water vapor can be 4:1, 5:1, 6:1, 7:1, 8:1, 9:1, 10:1, etc. This is for example only and is not limited. In some embodiments, the volume ratio of sputtering gas and mixed gas in the sputtering method is (0.6-3):1. In the exemplary examples, the volume ratio of sputtering gas and mixed gas can be 0.6:1, 0.8:1, 1:1, 1.2:1, 2:1, 2.2:1, 2.4:1, 3:1, etc. This is for example only and is not limited.

[0055] The sputtering gas and the mixed gas adopt the above volume ratio. Due to the introduction of water vapor, on the one hand, the roughness of the anti-reflection film obtained in the sputtering reaction coating process can be reduced, and the water vapor can be mixed with oxygen as a reaction gas and sputtering gas. In the sputtering deposition process, due to the action of the water vapor reaction gas, the number of hydroxyl groups (OH) on the surface of the coating film layer increases, so that the silicon dioxide layer and the subsequent anti-fingerprint film can have a better reaction interface, so that the generated silicon dioxide layer has a stronger interface bonding force on the surface of the anti-reflection film. On the other hand, the above volume ratio can make the generated silicon dioxide layer combine with the anti-fingerprint film layer to form a higher density Si-O bond to increase the bonding force, thereby ultimately improving the wear resistance of the anti-reflection anti-fingerprint film.

[0056] In some embodiments, the sputtering gas includes one or more of helium, neon, argon, krypton and xenon, preferably argon.

[0057] In some embodiments, the sputtering method includes a DC sputtering method, a radio frequency sputtering method, a magnetron sputtering method, or a reactive sputtering method. The above is only for example and not for limitation. Typically, the sputtering method is a magnetron sputtering method. The condition parameters of the magnetron sputtering method include:

[0058] a. The sputtering target is a silicon target;

[0059] b. The background vacuum is greater than 5×10 -4 Pa;

[0060] c. Sputtering gas pressure is 0.1-0.6Pa;

[0061] In some embodiments, the sputtering gas pressure may be 0.1 Pa, 0.2 Pa, 0.3 Pa, 0.4 Pa, 0.5 Pa or 0.6 Pa, etc., which are merely examples and not limiting.

[0062] d. The power of medium frequency sputtering power supply is 15-20KW;

[0063] In some embodiments, the power of the medium frequency sputtering power source may be 15KW, 16KW, 17KW, 18KW, 19KW or 20KW, etc. This is only an example and is not intended to be limiting. By adjusting the power of the medium frequency sputtering power source, the film thickness required for different film layers can be achieved.

[0064] e. The volume ratio of water vapor in the mixed gas is 5%-20%, preferably 8% or 15%. In the exemplary embodiment, the volume ratio of water vapor in the mixed gas can be 5%, 6%, 7%, 9%, 12%, 14%, 17%, 18%, 20%, etc., which are only examples and not limitations. When the volume ratio of water vapor in the mixed gas is lower than 5%, the performance improvement of the silicon dioxide layer is not obvious. When the volume ratio of water vapor in the mixed gas is higher than 20%, the compactness of the interface of the silicon dioxide layer will be affected, resulting in poor anti-wear performance.

[0065] In some embodiments, the aforementioned method can be used to prepare a silicon dioxide layer for use alone.

[0066] In some embodiments, the silicon dioxide layer can be used to prepare a film used for a screen of a display device.

[0067] Another embodiment of the present application provides an anti-reflection film, wherein the anti-reflection film has the above silicon dioxide layer. Exemplarily, the surface of the anti-reflection film has the above silicon dioxide layer.

[0068] The surface of the anti-reflection film adopts the above silicon dioxide layer, which can improve the wear resistance of the anti-reflection film.

[0069] In some embodiments, the anti-reflection film comprises:

[0070] Lamination; and

[0071] The silicon dioxide layer laminated and bonded to the surface of the laminate;

[0072] The stack includes a plurality of first layers stacked and combined in sequence;

[0073] The first layer includes a first bonding layer and a first silicon dioxide layer; two adjacent first layers are stacked and bonded by the first silicon dioxide layer of one first layer and the first bonding layer of the other first layer;

[0074] The first bonding layer on the surface of the stacked layer is stacked and bonded with the silicon dioxide layer.

[0075] Exemplarily, the bonding method may be sputtering deposition, which is not limited here.

[0076] Exemplarily, the anti-reflection film includes a surface silicon dioxide layer 2, a second first bonding layer 3, a third first silicon dioxide layer 4, a fourth first bonding layer 5, a fifth first silicon dioxide layer 6, a sixth first bonding layer 7, a seventh first silicon dioxide layer 8, an eighth first bonding layer 9, a ninth first silicon dioxide layer 10 and a substrate layer 11 which are stacked and combined in sequence, see Figure 1 shown.

[0077] Optionally, the material of the substrate layer is glass. For example, the thickness of the surface silicon dioxide layer is 86-106nm, the thickness of the second first bonding layer is 70-85nm, the thickness of the third first silicon dioxide layer is 14-18nm, the thickness of the fourth first bonding layer is 34-42nm, the thickness of the fifth first silicon dioxide layer is 17-22nm, the thickness of the sixth first bonding layer is 9-13nm, the thickness of the seventh first silicon dioxide layer is 36-45nm, the thickness of the eighth first bonding layer is 15-20nm, the thickness of the ninth first silicon dioxide layer is 38-47nm, and the thickness of the substrate layer is 0.3-2nm. Optionally, the thickness of the surface silicon dioxide layer can be 86nm, 89nm, 91nm, 93nm, 95nm, 99nm, 102nm, 104nm or 106nm; the thickness of the second first bonding layer can be 70nm, 73nm, 76nm, 79nm, 81nm, 83nm or 85nm; the thickness of the third first silicon dioxide layer can be 14nm, 15nm, 16nm or 18nm; the thickness of the fourth first bonding layer can be 34nm, 36nm, 38nm, 40nm or 42nm ; The thickness of the fifth first silicon dioxide layer can be 17nm, 18nm, 20nm or 22nm; the thickness of the sixth first bonding layer can be 9nm, 11nm, 12nm or 13nm; the thickness of the seventh first silicon dioxide layer can be 36nm, 38nm, 40nm, 43nm or 45nm; the thickness of the eighth first bonding layer can be 15nm, 17nm, 19nm or 20nm; the thickness of the ninth first silicon dioxide layer can be 38nm, 39nm, 41nm, 43nm, 45 or 47nm. The thickness of the substrate layer can be 0.3nm, 0.6nm, 0.8nm, 1.2nm, 1.5nm, 1.8nm or 2nm. This is for example only and is not limited.

[0078] In some embodiments, the first bonding layer includes SiN x Layer, ZrO2 layer or TiO2 layer. Exemplarily, the first bonding layer is SiN x Layer, x may be 1, 2, 3, 4 or 5, etc. Exemplarily, x=1, and the first bonding layer is a SiN layer.

[0079] In another embodiment of the present application, a method for preparing the above-mentioned anti-reflection film is provided, comprising:

[0080] The silicon dioxide layer under the anti-fingerprint film layer of the anti-reflective anti-fingerprint film is prepared by the above method.

[0081] In some embodiments, the preparation method further comprises:

[0082] Preparation of laminate: including:

[0083] A first silicon dioxide layer and a first bonding layer are alternately deposited on the substrate in sequence by sputtering to form a first layer;

[0084] Perform the following operations 0 or more times: alternately depositing a first silicon dioxide layer and a first bonding layer on the first layer;

[0085] The silicon dioxide layer is prepared on the stack to obtain an anti-reflection film.

[0086] In this preparation method, when the first layer is deposited on the first layer 0 times, there is only the first layer on the substrate, that is, the stack is the first layer at this time; when the first layer is deposited on the first layer 1 time, the first layer on the substrate is also sputter-deposited with the first layer; the rest of the times are similar. Thus, the stack includes 1 first layer, 2 first layers, etc.

[0087] When the first layer is deposited on the first layer for three times, the anti-reflection film includes a surface silicon dioxide layer 2, a second first bonding layer 3, a third first silicon dioxide layer 4, a fourth first bonding layer 5, a fifth first silicon dioxide layer 6, a sixth first bonding layer 7, a seventh first silicon dioxide layer 8, an eighth first bonding layer 9, a ninth first silicon dioxide layer 10 and a substrate layer 11, which are stacked and combined in sequence, see Figure 1 shown.

[0088] In some embodiments, a method of depositing a first silicon dioxide layer includes:

[0089] a. The sputtering target is silicon target; b. The background vacuum is greater than 5×10 -4 Pa; c. Sputtering gas pressure is 0.1-0.6Pa; d. Medium frequency sputtering power supply power is 8-20KW; e. The volume of sputtering gas and reaction gas is (0.6-3):1; f. The sputtering gas is argon and the reaction gas is oxygen;

[0090] In some embodiments, the first bonding layer is a SiN layer, and the method of depositing the first bonding layer includes:

[0091] a. The sputtering target is silicon target; b. The background vacuum is greater than 5×10 -4 Pa; c. sputtering gas pressure is 0.1-0.6Pa; d. medium frequency sputtering power supply power is 8-20KW; e. the volume of sputtering gas and reaction gas is (0.6-3):1; f. sputtering gas is argon and reaction gas is nitrogen.

[0092] In a sixth aspect, an embodiment of the present application provides an anti-reflection and anti-fingerprint film, comprising the aforementioned anti-reflection film; the surface of the silicon dioxide layer of the anti-reflection film has an anti-fingerprint film layer.

[0093] For example, the anti-reflective anti-fingerprint film comprises an anti-fingerprint film layer 1, a surface silicon dioxide layer 2, a second first bonding layer 3, a third first silicon dioxide layer 4, a fourth first bonding layer 5, a fifth first silicon dioxide layer 6, a sixth first bonding layer 7, a seventh first silicon dioxide layer 8, an eighth first bonding layer 9, a ninth first silicon dioxide layer 10 and a substrate layer 11 which are stacked and combined in sequence. Optionally, the substrate layer is made of glass. Please refer to Figure 2 shown.

[0094] For example, the thickness of the anti-fingerprint film layer is 5-12nm, the thickness of the surface silicon dioxide layer is 86-106nm, the thickness of the second first bonding layer is 70-85nm, the thickness of the third first silicon dioxide layer is 14-18nm, the thickness of the fourth first bonding layer is 34-42nm, the thickness of the fifth first silicon dioxide layer is 17-22nm, the thickness of the sixth first bonding layer is 9-13nm, the thickness of the seventh first silicon dioxide layer is 36-45nm, the thickness of the eighth first bonding layer is 15-20nm, the thickness of the ninth first silicon dioxide layer is 38-47nm and the thickness of the substrate layer is 0.3-2nm.

[0095] Optionally, the material of the substrate layer is a glass substrate. Optionally, the thickness of the anti-fingerprint film layer can be 5, 7, 9, 10 or 12 nm; the thickness of the surface silicon dioxide layer can be 86, 89, 91, 93, 95, 99, 102, 104 or 106 nm; the thickness of the second first bonding layer can be 70, 73, 76, 79, 81, 83 or 85 nm; the thickness of the third first silicon dioxide layer can be 14, 15, 16 or 18 nm; the thickness of the fourth first bonding layer can be 34, 36, 38, 40 or 42 nm; the thickness of the fifth first bonding layer can be 34, 36, 38, 40 or 42 nm. The thickness of the first silicon dioxide layer can be 17, 18, 20 or 22 nm; the thickness of the first bonding layer of the sixth layer can be 9, 11, 12 or 13 nm; the thickness of the first silicon dioxide layer of the seventh layer can be 36 nm, 38 nm, 40 nm, 43 nm or 45 nm; the thickness of the first bonding layer of the eighth layer can be 15 nm, 17 nm, 19 nm or 20 nm; the thickness of the first silicon dioxide layer of the ninth layer can be 38 nm, 39 nm, 41 nm, 43 nm, 45 nm or 47 nm. The thickness of the substrate layer can be 0.3 nm, 0.6 nm, 0.8 nm, 1.2 nm, 1.5 nm, 1.8 nm or 2 nm. This is only an example and is not limited.

[0096] The functions and effects of the technical features in this technical solution that are similar or related to the aforementioned technical solution are similar to those of the aforementioned technical solution. The inventive concept and beneficial effects of this technical solution are similar to those of the aforementioned technical solution, and are not elaborated here.

[0097] In a seventh aspect, an embodiment of the present application provides a method for preparing the anti-reflective anti-fingerprint film, comprising:

[0098] An anti-fingerprint film layer is deposited on the surface of the silicon dioxide layer of the anti-reflection film.

[0099] The anti-fingerprint film layer is deposited on the surface of the silicon dioxide layer of the anti-reflection film by the preparation method, so that the anti-reflection anti-fingerprint film has low reflection and high transmittance, and can improve the wear resistance and service life of the anti-reflection anti-fingerprint film.

[0100] The functions and effects of the technical features in this technical solution that are similar or related to the aforementioned technical solution are similar to those of the aforementioned technical solution. The inventive concept and beneficial effects of this technical solution are similar to those of the aforementioned technical solution, and are not elaborated here.

[0101] In some embodiments, an anti-fingerprint film layer is deposited on the surface of the silicon dioxide layer of the anti-reflection film; comprising:

[0102] An anti-fingerprint film layer is deposited on the surface of the silicon dioxide layer of the anti-reflection film by a spraying process.

[0103] In an eighth aspect, an embodiment of the present application provides an anti-reflective anti-fingerprint film, comprising:

[0104] Silicon dioxide layer;

[0105] And an anti-fingerprint film layer is arranged on the surface of the silicon dioxide layer.

[0106] The silicon dioxide layer and the anti-fingerprint film layer prepared by the above preparation method are used as the film layer structure of the anti-reflection anti-fingerprint film, so that the anti-reflection anti-fingerprint film has low reflection and high transmittance, and can also improve the wear resistance and service life of the anti-reflection anti-fingerprint film.

[0107] In a ninth aspect, an embodiment of the present application provides a method for preparing the anti-reflective anti-fingerprint film, comprising:

[0108] An anti-fingerprint film layer is deposited on the surface of the silicon dioxide layer.

[0109] The functions and effects of the technical features in this technical solution that are similar or related to the aforementioned technical solution are similar to those of the aforementioned technical solution. The inventive concept and beneficial effects of this technical solution are similar to those of the aforementioned technical solution, and are not elaborated here.

[0110] In a tenth aspect, an embodiment of the present application provides a display device having the aforementioned anti-reflection film or the aforementioned anti-reflection anti-fingerprint film.

[0111] The functions and effects of the technical features in this technical solution that are similar or related to the aforementioned technical solution are similar to those of the aforementioned technical solution. The inventive concept and beneficial effects of this technical solution are similar to those of the aforementioned technical solution, and are not elaborated here.

[0112] The following is a description of the contents in conjunction with specific embodiments.

[0113] Example 1

[0114] An anti-reflective anti-fingerprint film includes, from top to bottom, an anti-fingerprint film layer, a top silicon dioxide layer, a SiN layer a, a silicon dioxide layer a, a SiN layer b, a silicon dioxide layer b, a SiN layer c, a silicon dioxide layer c, a SiN layer d, a silicon dioxide layer d and a substrate layer. The substrate layer is made of glass.

[0115] The preparation method of the anti-reflective anti-fingerprint film comprises:

[0116] S1. On the surface of the substrate layer, a silicon dioxide layer d, a SiN layer d, a silicon dioxide layer c, a SiN layer c, a silicon dioxide layer b, a SiN layer b, a silicon dioxide layer a and a SiN layer a are sequentially deposited by vacuum magnetron sputtering to obtain a laminate;

[0117] The deposition of silicon dioxide layer d, silicon dioxide layer c, silicon dioxide layer b and silicon dioxide layer a uses a silicon target as a sputtering target material, and the background vacuum is 6×10 -4 Pa, using a medium frequency sputtering power supply of 12KW, argon as the sputtering gas, oxygen as the reaction gas, and a volume ratio of argon to oxygen of 1:1; silicon dioxide film was deposited at a sputtering pressure of 0.2Pa;

[0118] The deposition of SiN layer d, SiN layer c, SiN layer b and SiN layer a uses silicon target as sputtering target material, and the background vacuum degree is 6×10 -4 Pa, a medium frequency sputtering power source with a power of 12KW is used, argon is filled as the sputtering gas, nitrogen is filled as the reaction gas, and the volume ratio of argon to nitrogen is 1:1; the SiN layer is deposited at a sputtering pressure of 0.2Pa.

[0119] S2. depositing a top layer of silicon dioxide on the surface of the stack;

[0120] The deposition of the anti-fingerprint film layer uses a silicon target as the sputtering target and a background vacuum of 6×10 -4 Pa, a medium frequency sputtering power source with a power of 15KW is used, argon is filled as the sputtering gas, a mixed gas of oxygen and water vapor is used as the sputtering reaction gas, the volume ratio of argon and the mixed gas is 1:1, and water vapor accounts for 8% of the volume of the mixed gas, and the top silicon dioxide layer is deposited at a sputtering pressure of 0.2Pa.

[0121] S3. Depositing an anti-fingerprint film layer on the surface of the top silicon dioxide layer by a spraying process to obtain an anti-reflective anti-fingerprint film.

[0122] Example 2

[0123] An anti-reflective anti-fingerprint film includes, from top to bottom, an anti-fingerprint film layer, a top silicon dioxide layer, a SiN layer a, a silicon dioxide layer a, a SiN layer b, a silicon dioxide layer b, a SiN layer c, a silicon dioxide layer c, a SiN layer d, a silicon dioxide layer d and a substrate layer. The substrate layer is made of glass.

[0124] The preparation method of the anti-reflective anti-fingerprint film comprises:

[0125] S1. On the surface of the substrate layer, a silicon dioxide layer d, a SiN layer d, a silicon dioxide layer c, a SiN layer c, a silicon dioxide layer b, a SiN layer b, a silicon dioxide layer a and a SiN layer a are sequentially deposited by vacuum magnetron sputtering to obtain a laminate;

[0126] The deposition of silicon dioxide layer d, silicon dioxide layer c, silicon dioxide layer b and silicon dioxide layer a uses a silicon target as a sputtering target material, and the background vacuum is 6×10 -4 Pa, using a medium frequency sputtering power supply of 12KW, argon as the sputtering gas, oxygen as the reaction gas, and a volume ratio of argon to oxygen of 1:1; silicon dioxide film was deposited at a sputtering pressure of 0.2Pa;

[0127] The deposition of SiN layer d, SiN layer c, SiN layer b and SiN layer a uses silicon target as sputtering target material, and the background vacuum degree is 6×10 -4 Pa, a medium frequency sputtering power source with a power of 12KW is used, argon is filled as the sputtering gas, nitrogen is filled as the reaction gas, and the volume ratio of argon to nitrogen is 1:1; the SiN layer is deposited at a sputtering pressure of 0.2Pa.

[0128] S2. depositing a top layer of silicon dioxide on the surface of the stack;

[0129] The deposition of the anti-fingerprint film layer uses a silicon target as the sputtering target and a background vacuum of 6×10 -4 Pa, a medium frequency sputtering power source with a power of 15KW is used, argon is filled as the sputtering gas, a mixed gas of oxygen and water vapor is used as the sputtering reaction gas, the volume ratio of argon and the mixed gas is 1:1, and water vapor accounts for 15% of the volume of the mixed gas, and the top silicon dioxide layer is deposited at a sputtering pressure of 0.2Pa.

[0130] S3. Depositing an anti-fingerprint film layer on the surface of the top silicon dioxide layer by a spraying process to obtain an anti-reflective anti-fingerprint film.

[0131] Example 3

[0132] An anti-reflective anti-fingerprint film includes, from top to bottom, an anti-fingerprint film layer, a top silicon dioxide layer, a SiN layer a, a silicon dioxide layer a, a SiN layer b, a silicon dioxide layer b, a SiN layer c, a silicon dioxide layer c, a SiN layer d, a silicon dioxide layer d and a substrate layer. The substrate layer is made of glass.

[0133] The preparation method of the anti-reflective anti-fingerprint film comprises:

[0134] S1. On the surface of the substrate layer, a silicon dioxide layer d, a SiN layer d, a silicon dioxide layer c, a SiN layer c, a silicon dioxide layer b, a SiN layer b, a silicon dioxide layer a and a SiN layer a are sequentially deposited by vacuum magnetron sputtering to obtain a laminate;

[0135] The deposition of silicon dioxide layer d, silicon dioxide layer c, silicon dioxide layer b and silicon dioxide layer a uses: silicon target as sputtering target material, background vacuum degree 6×10 -4 Pa, using a medium frequency sputtering power supply of 15KW, argon as the sputtering gas, oxygen as the reaction gas, and a volume ratio of argon to oxygen of 1.5:1; silicon dioxide film was deposited at a sputtering pressure of 0.4Pa;

[0136] The deposition of SiN layer d, SiN layer c, SiN layer b and SiN layer a uses silicon target as sputtering target material, and the background vacuum degree is 6×10 -4 Pa, a medium frequency sputtering power source with a power of 18KW was used, argon was filled as the sputtering gas, nitrogen was filled as the reaction gas, and the volume ratio of argon to nitrogen was 1.5:1; the SiN layer was deposited at a sputtering gas pressure of 0.4Pa.

[0137] S2. depositing a top layer of silicon dioxide on the surface of the stack;

[0138] The deposition of the anti-fingerprint film layer uses a silicon target as the sputtering target, and the background vacuum is 6×10 -4 Pa, a medium frequency sputtering power source with a power of 15KW is used, argon is filled as the sputtering gas, a mixed gas of oxygen and water vapor is used as the sputtering reaction gas, the volume ratio of argon to the mixed gas is 1.5:1, and water vapor accounts for 18% of the volume of the mixed gas, and the top silicon dioxide layer is deposited at a sputtering pressure of 0.4Pa.

[0139] S3. Depositing an anti-fingerprint film layer on the surface of the top silicon dioxide layer by a spraying process to obtain an anti-reflective anti-fingerprint film.

[0140] Example 4

[0141] An anti-reflective anti-fingerprint film includes, from top to bottom, an anti-fingerprint film layer, a top silicon dioxide layer, a SiN layer a, a silicon dioxide layer a, a SiN layer b, a silicon dioxide layer b, a SiN layer c, a silicon dioxide layer c, a SiN layer d, a silicon dioxide layer d and a substrate layer. The substrate layer is made of glass.

[0142] The preparation method of the anti-reflective anti-fingerprint film comprises:

[0143] S1. On the surface of the substrate layer, a silicon dioxide layer d, a SiN layer d, a silicon dioxide layer c, a SiN layer c, a silicon dioxide layer b, a SiN layer b, a silicon dioxide layer a and a SiN layer a are sequentially deposited by vacuum magnetron sputtering to obtain a laminate;

[0144] The deposition of silicon dioxide layer d, silicon dioxide layer c, silicon dioxide layer b and silicon dioxide layer a uses silicon target as sputtering target material, and the background vacuum degree is 7×10 -4 Pa, using a medium frequency sputtering power supply of 16KW, argon as the sputtering gas, oxygen as the reaction gas, and a volume ratio of argon to oxygen of 1.8:1; silicon dioxide film was deposited at a sputtering pressure of 0.5Pa;

[0145] The deposition of SiN layer d, SiN layer c, SiN layer b and SiN layer a uses silicon target as sputtering target material, and the background vacuum degree is 7×10 -4 Pa, a medium frequency sputtering power source with a power of 16KW was used, argon was filled as the sputtering gas, nitrogen was filled as the reaction gas, and the volume ratio of argon to nitrogen was 1.8:1; the SiN layer was deposited at a sputtering pressure of 0.5Pa.

[0146] S2. depositing a top layer of silicon dioxide on the surface of the stack;

[0147] The deposition of the anti-fingerprint film layer uses a silicon target as the sputtering target, and the background vacuum is 7×10 -4 Pa, a medium frequency sputtering power source with a power of 18KW is used, argon is filled as the sputtering gas, a mixed gas of oxygen and water vapor is used as the sputtering reaction gas, the volume ratio of argon to the mixed gas is 1.8:1, and water vapor accounts for 12% of the volume of the mixed gas, and the top silicon dioxide layer is deposited at a sputtering pressure of 0.5Pa.

[0148] S3. Depositing an anti-fingerprint film layer on the surface of the top silicon dioxide layer by a spraying process to obtain an anti-reflective anti-fingerprint film.

[0149] Example 5

[0150] An anti-reflective anti-fingerprint film includes, from top to bottom, an anti-fingerprint film layer, a top silicon dioxide layer, a SiN layer a, a silicon dioxide layer a, a SiN layer b, a silicon dioxide layer b, a SiN layer c, a silicon dioxide layer c, a SiN layer d, a silicon dioxide layer d and a substrate layer. The substrate layer is made of glass.

[0151] The preparation method of the anti-reflective anti-fingerprint film comprises:

[0152] S1. On the surface of the substrate layer, a silicon dioxide layer d, a SiN layer d, a silicon dioxide layer c, a SiN layer c, a silicon dioxide layer b, a SiN layer b, a silicon dioxide layer a and a SiN layer a are sequentially deposited by vacuum magnetron sputtering to obtain a laminate;

[0153] The deposition of silicon dioxide layer d, silicon dioxide layer c, silicon dioxide layer b and silicon dioxide layer a uses silicon target as sputtering target material, and the background vacuum degree is 7×10 -4 Pa, using a medium frequency sputtering power supply of 20KW, argon as the sputtering gas, oxygen as the reaction gas, and a volume ratio of argon to oxygen of 3:1; silicon dioxide film was deposited at a sputtering pressure of 0.6Pa;

[0154] The deposition of SiN layer d, SiN layer c, SiN layer b and SiN layer a uses silicon target as sputtering target material, and the background vacuum degree is 7×10 -4 Pa, a medium frequency sputtering power source with a power of 20KW is used, argon is filled as the sputtering gas, nitrogen is filled as the reaction gas, and the volume ratio of argon to nitrogen is 3:1; the SiN layer is deposited at a sputtering pressure of 0.6Pa.

[0155] S2. depositing a top layer of silicon dioxide on the surface of the stack;

[0156] The deposition of the anti-fingerprint film layer uses a silicon target as the sputtering target, and the background vacuum is 7×10 -4 Pa, a medium frequency sputtering power source with a power of 17KW is used, argon is filled as the sputtering gas, a mixed gas of oxygen and water vapor is used as the sputtering reaction gas, the volume ratio of argon to the mixed gas is 3:1, and water vapor accounts for 20% of the volume of the mixed gas, and the top silicon dioxide layer is deposited at a sputtering pressure of 0.6Pa.

[0157] S3. Depositing an anti-fingerprint film layer on the surface of the top silicon dioxide layer by a spraying process to obtain an anti-reflective anti-fingerprint film.

[0158] Comparative Example 1

[0159] An anti-reflective anti-fingerprint film includes, from top to bottom, an anti-fingerprint film layer, a top silicon dioxide layer, a SiN layer a, a silicon dioxide layer a, a SiN layer b, a silicon dioxide layer b, a SiN layer c, a silicon dioxide layer c, a SiN layer d, a silicon dioxide layer d and a substrate layer. The substrate layer is made of glass.

[0160] The preparation method of the anti-reflective anti-fingerprint film comprises:

[0161] S1. On the surface of the substrate layer, a silicon dioxide layer d, a SiN layer d, a silicon dioxide layer c, a SiN layer c, a silicon dioxide layer b, a SiN layer b, a silicon dioxide layer a and a SiN layer a are sequentially deposited by vacuum magnetron sputtering to obtain a laminate;

[0162] The deposition of silicon dioxide layer d, silicon dioxide layer c, silicon dioxide layer b and silicon dioxide layer a uses: silicon target as sputtering target material, background vacuum degree> 5×10 -4 Pa, using a medium frequency sputtering power supply of 8-20KW, filling with argon as sputtering gas, oxygen as reaction gas, and a volume ratio of argon to oxygen of 1:1; depositing silicon dioxide film at a sputtering pressure of 0.1-0.6Pa;

[0163] The deposition of SiN layer d, SiN layer c, SiN layer b and SiN layer a uses silicon target as sputtering target material, and the background vacuum degree is greater than 6×10 -4 Pa, a medium frequency sputtering power source with a power of 12KW is used, argon is filled as the sputtering gas, nitrogen is filled as the reaction gas, and the volume ratio of argon to nitrogen is 1:1; the SiN layer is deposited at a sputtering pressure of 0.2Pa.

[0164] S2. depositing a top layer of silicon dioxide on the surface of the stack;

[0165] The deposition of the anti-fingerprint film layer uses a silicon target as the sputtering target, and the background vacuum is > 5×10 -4 Pa, a medium frequency sputtering power source with a power of 15KW is used, argon is filled as the sputtering gas, oxygen is used as the sputtering reaction gas, the volume ratio of argon and the mixed gas is 1:1, and the top silicon dioxide layer is deposited at a sputtering pressure of 0.2Pa.

[0166] S3. Depositing an anti-fingerprint film layer on the surface of the top silicon dioxide layer by a spraying process to obtain an anti-reflective anti-fingerprint film.

[0167] Performance Testing

[0168] Test 1 Optical performance test:

[0169] Test method: The anti-reflection anti-fingerprint films prepared in Examples 1-2 and Comparative Example 1 were tested for their average reflectivity R using light with a wavelength of 450nm-650nm. f, Rf-a* and Rf-b*, where Rf-a* represents the reflectance chromaticity a*, and Rf-b* represents the reflectance chromaticity b*, as shown in Table 1 below.

[0170] Table 1

[0171]

[0172] It can be seen from Table 1 above that the anti-reflection anti-fingerprint films prepared in Examples 1-2 and Comparative Example 1 have very similar optical performance indicators. Therefore, using a mixed gas of oxygen and water vapor as a reaction gas does not affect the low reflection and high light transmittance of the anti-reflection anti-fingerprint film.

[0173] Test 2 wear resistance test:

[0174] Test method: The anti-reflection and anti-fingerprint films prepared in Examples 1-2 and Comparative Example 1 were rubbed with steel wool 2000 times, 3500 times and 10000 times using a friction resistance test machine with a 10×10 mm grinding head and a load of 1 kg. The water drop angle of the coated glass before and after friction was tested using a water drop angle tester. The results are shown in Table 2 below.

[0175] Table 2

[0176]

[0177] As can be seen from Table 1 above, the anti-reflective anti-fingerprint film prepared in Examples 1-2 has better wear resistance than that in Comparative Example 1, and the water drop angle is 88°-90° after rubbing 10,000 times. Therefore, Examples 1 and 2 use oxygen and water vapor as mixed gases to prepare the silicon dioxide layer, which has the effect of significantly improving the wear resistance of the anti-reflective anti-fingerprint film.

[0178] From the results in Table 1 and Table 2, it can be seen that the embodiments of the present application significantly improve the wear resistance of the anti-reflective anti-fingerprint film without affecting the low reflection and high light transmittance of the anti-reflective anti-fingerprint film, thereby increasing the service life of the anti-reflective anti-fingerprint film.

[0179] The above description is only a preferred embodiment of the present application and is not intended to limit the present application. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present application should be included in the protection scope of the present application.

Claims

1. A method for preparing a silicon dioxide layer, characterized in that: include: The silicon dioxide layer is prepared by sputtering using a mixed gas of oxygen and water vapor as a reaction gas.

2. The method for preparing a silicon dioxide layer according to claim 1, wherein: The volume ratio of the oxygen and the water vapor in the mixed gas is (4-10):1; and / or, the volume ratio of the sputtering gas and the mixed gas in the sputtering method is (0.6-3):1, and the sputtering gas includes one or more of helium, neon, argon, krypton and xenon.

3. The method for preparing a silicon dioxide layer according to claim 1, wherein: The sputtering method is a magnetron sputtering method; the magnetron sputtering method includes at least one of the following conditions: a. The sputtering target is a silicon target; b. The background vacuum is greater than 5×10 -4 Pa; c. Sputtering gas pressure is 0.1-0.6Pa; d. The power of medium frequency sputtering power supply is 15-20KW; e. The volume proportion of water vapor in the mixed gas is 5%-20%.

4. A method for preparing an anti-reflective anti-fingerprint film, characterized in that: include: The silicon dioxide layer under the anti-fingerprint film layer of the anti-reflective anti-fingerprint film is prepared by the method described in any one of claims 1 to 3.

5. The method for preparing the anti-reflective anti-fingerprint film according to claim 4, characterized in that: Also includes: preparing a laminate; preparing the silicon dioxide layer on the stack to obtain an anti-reflection film; An anti-fingerprint film layer is deposited on the surface of the silicon dioxide layer of the anti-reflection film to obtain the anti-reflection anti-fingerprint film.

6. The method for preparing the anti-reflective anti-fingerprint film according to claim 5, characterized in that: The anti-reflection film includes a stack and the silicon dioxide layer stacked and bonded to the surface of the stack; The stack includes a plurality of first layers stacked and combined in sequence; The first layer includes a first bonding layer and a first silicon dioxide layer; two adjacent first layers are stacked and bonded by the first silicon dioxide layer of one first layer and the first bonding layer of the other first layer; The first bonding layer on the surface of the stack is stacked and bonded with the silicon dioxide layer; The first bonding layer is a SiN layer, a ZrO2 layer or a TiO2 layer.

7. The method for preparing the anti-reflective anti-fingerprint film according to any one of claims 4 to 6, characterized in that: Preparing the stack includes: A first silicon dioxide layer and a first bonding layer are alternately deposited on the substrate in sequence by sputtering to form a first layer; Perform the following operations 0 or more times: alternately depositing a first silicon dioxide layer and a first bonding layer on the aforementioned first layer; and / or, The method of depositing the first silicon dioxide layer comprises at least one of the following conditions: a. The sputtering target is silicon target; b. The background vacuum is greater than 5×10 -4 Pa; c. sputtering gas pressure is 0.1-0.6Pa; d. medium frequency sputtering power supply power is 8-20KW; e. the volume of sputtering gas and reaction gas is (0.6-3):1; f. sputtering gas is argon and reaction gas is oxygen.

8. The method for preparing the anti-reflective anti-fingerprint film according to claim 7, characterized in that: The first bonding layer is a SiN layer, and the method for depositing the first bonding layer includes at least one of the following conditions: a. The sputtering target is a silicon target; b. The background vacuum is greater than 5×10 -4 Pa; c. sputtering gas pressure is 0.1-0.6Pa; d. medium frequency sputtering power supply power is 8-20KW; e. the volume of sputtering gas and reaction gas is (0.6-3):1; f. sputtering gas is argon and reaction gas is nitrogen.

9. An anti-reflective anti-fingerprint film, characterized in that: include: The silicon dioxide layer according to any one of claims 1 to 3; and The anti-fingerprint film layer is arranged on the surface of the silicon dioxide layer.

10. A display device, characterized in that: The screen of the display device has the anti-reflection and anti-fingerprint film according to claim 9.

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